Power module with independent control of gate turn-on and turn-off resistances

Abstract

The utility model belongs to power semiconductor technical field, concretely relates to a kind of gate open, the power module of independent control of turn-off resistance.The gate open, the power module of independent control of turn-off resistance includes: a plurality of gate signal terminals;The gate signal terminal is electrically connected with the gate of corresponding switch power chip through the gate resistance selection circuit being set on DBC substrate;Wherein the gate resistance selection circuit includes the first resistance circuit and the second resistance circuit in parallel;The first resistance circuit includes the first gate resistance and the first diode connected in series;The second resistance circuit includes the second gate resistance and the second diode connected in series, and the conduction direction of second diode and the first diode is opposite.The utility model realizes the ability of different gate resistance when being respectively given when device open, turn-off, and gate resistance is integrated in power device inside, reduces the use of external component, reduces the design complexity and wiring difficulty of circuit board, reduces circuit board space occupation.

Description

Technical Field

[0001] This utility model belongs to the field of power semiconductor technology, specifically relating to a power module with independently controlled gate turn-on and turn-off resistors. Background Technology

[0002] Gate resistors play a crucial role in power semiconductor devices. A suitable gate resistor can strike a balance between switching speed, electromagnetic interference (EMI), and device safety. Furthermore, a suitable gate resistor can make the switching characteristics of each device more similar, thereby improving current sharing in parallel connections.

[0003] Patent CN118715717A discloses a gate driver circuit and a power conversion device. Its gate resistor is designed on the client driver board, which increases the design complexity and wiring difficulty of the driver. In addition, the peripheral wiring length is long and the parasitic inductance is high, which can easily cause oscillation problems in high-frequency scenarios. Utility Model Content

[0004] The purpose of this invention is to provide a power module with independently controllable gate turn-on and turn-off resistors to solve the above-mentioned technical problems.

[0005] This application provides a power module with independently controllable gate turn-on and turn-off resistors. The power module with independently controllable gate turn-on and turn-off resistors includes:

[0006] Base plate;

[0007] DBC substrate, mounted on the base plate;

[0008] Several switching power chips are mounted on the DBC substrate;

[0009] Several gate signal terminals; the gate signal terminals are electrically connected to the gate of the corresponding switching power chip through a gate resistor selection circuit disposed on the DBC substrate; wherein

[0010] The gate resistor selection circuit includes a first resistor circuit and a second resistor circuit connected in parallel.

[0011] The first resistor circuit includes a first gate resistor and a first diode connected in series;

[0012] The second resistor circuit includes a second gate resistor and a second diode connected in series, and the conduction direction of the second diode is opposite to that of the first diode.

[0013] In one embodiment of this application, the power module with independently controlled gate turn-on and turn-off resistors further includes: a housing mounted on a base plate;

[0014] One end of the gate signal terminal extends outside the housing, and the other end is electrically connected to the gate of the switching power chip through the gate resistor selection circuit.

[0015] In one embodiment of this application, the cathode of the first diode is soldered to a first copper region on a DBC substrate, and the anode is connected to a second copper region via a lead; the first copper region is connected to a first gate resistor, and a gate signal terminal is soldered onto the second copper region.

[0016] The cathode of the second diode is soldered to the second copper region on the DBC substrate, and the anode is connected to the second gate resistor via a lead.

[0017] In one embodiment of this application, the switching power chip includes an IGBT chip or a MOSFET chip.

[0018] In one embodiment of this application, the power module is a single-phase inverter power module.

[0019] In one embodiment of this application, the power module is a three-phase inverter power module.

[0020] The beneficial effects of this utility model are:

[0021] 1. The gate resistor is integrated inside the power device, which reduces the use of external components, reduces the design complexity and wiring difficulty of the circuit board, and reduces the space occupied by the circuit board;

[0022] 2. The integrated gate resistor has a more stable connection with the internal structure of the power semiconductor device, avoiding poor contact problems caused by external resistors due to poor soldering, vibration, and other factors, thereby improving the reliability of the entire device.

[0023] 3. Integrated gate resistors can effectively shorten the wiring length of the gate circuit, reduce the impact of parasitic inductance and capacitance, and help improve the overall performance of the system;

[0024] 4. Traditional devices have integrated resistors that do not have the ability to apply different gate resistances when the device is turned on and off. This invention has the ability to apply different gate resistances when the device is turned on and off, and can apply the optimal turn-on resistance and the optimal turn-off resistance according to the switching characteristics of the power chip to achieve the best performance of the device.

[0025] Other features and advantages of this invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objectives and other advantages of this invention are realized and obtained through the structures particularly pointed out in the description and the accompanying drawings.

[0026] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0027] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0028] Figure 1 This is a schematic diagram of a power module with independently controlled gate turn-on and turn-off resistors according to a preferred embodiment of the present invention;

[0029] Figure 2 This is an internal schematic diagram of a power module with independently controlled gate turn-on and turn-off resistors according to a preferred embodiment of the present invention.

[0030] Figure 3 yes Figure 2 Partial schematic diagram;

[0031] Figure 4 This is a partial schematic diagram of the power module with independently controlled gate turn-on and turn-off resistors according to a preferred embodiment of the present invention.

[0032] Figure 5 This is an axial view of a power module with independently controlled gate turn-on and turn-off resistors according to an embodiment of the present invention.

[0033] Figure 6 This is a top view of a power module with independently controlled gate turn-on and turn-off resistors according to an embodiment of the present invention.

[0034] Figure 7 This is a schematic diagram of the external appearance of a power module with independently controlled gate turn-on and turn-off resistors according to an embodiment of the present invention.

[0035] Figure 8 This is a schematic diagram of the topology of a single-phase inverter power module according to an embodiment of this utility model;

[0036] Figure 9 This is a schematic diagram of the principle topology of a three-phase inverter power module according to an embodiment of this utility model.

[0037] In the picture:

[0038] 1. Base plate; 3. Gate signal terminal; 4. Gate resistor selection circuit; 4. First resistor circuit; 41. Second resistor circuit; 42. First diode; 4-1. Second diode; 4-2. DBC substrate; 5. First copper area; 51. Second copper area; 52. First gate resistor; 6-1. Second gate resistor; 6-2. Switching power chip; 7. Housing; 111. Detailed Implementation

[0039] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0040] This application provides a power module with independently controllable gate turn-on and turn-off resistors, which will be described in detail below. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments of this application. Furthermore, the descriptions of each embodiment have their own emphasis; parts not described in detail in a certain embodiment can be referred to in the relevant descriptions of other embodiments.

[0041] See Figure 1 and Figure 2 In one embodiment, the power module with independently controlled gate turn-on and turn-off resistors includes: a base plate 1; a DBC substrate 5 disposed on the base plate 1; a plurality of switching power chips 7 disposed on the DBC substrate 5; and a plurality of gate signal terminals 3. The gate signal terminals 3 are electrically connected to the gates of the corresponding switching power chips 7 through a gate resistor selection circuit 4 disposed on the DBC substrate 5. The gate resistor selection circuit 4 includes a first resistor circuit 41 and a second resistor circuit 42 connected in parallel. The first resistor circuit 41 includes a first gate resistor 6-1 and a first diode 4-1 connected in series. The second resistor circuit 42 includes a second gate resistor 6-2 and a second diode 4-2 connected in series, and the conduction direction of the second diode 4-2 is opposite to that of the first diode 4-1.

[0042] Optionally, the power module with independently controlled gate turn-on and turn-off resistors further includes: a housing 111 covered on the base plate 1; one end of the gate signal terminal 3 extends out of the housing 111, and the other end is electrically connected to the gate of the switching power chip 7 through the gate resistor selection circuit 4.

[0043] See Figure 2In one optional embodiment, the cathode of the first diode 4-1 is soldered to the first copper region 51 on the DBC substrate 5, and the anode is connected to the second copper region 52 through the lead 8; the first copper region 51 is connected to the first gate resistor 6-1, and the second copper region 52 is soldered with a gate signal terminal 3; the cathode of the second diode 4-2 is soldered to the second copper region 52 on the DBC substrate 5, and the anode is connected to the second gate resistor 6-2 through the lead 8.

[0044] In one application scenario, when a positive voltage turn-on signal is transmitted to the gate signal terminal 3, the first diode 4-1 conducts in the forward direction, and the first gate resistor 6-1 connected in series with it becomes the gate resistance during turn-on. The second diode 4-2 is reverse-biased and cut off, and the second gate resistor 6-2 connected in series with it does not operate. Similarly, when a negative voltage turn-off signal is transmitted to the gate signal terminal 3, the first diode 4-1 is reverse-biased and cut off, and the first gate resistor 6-1 connected in series with it does not operate. The second diode 4-2 conducts, and the second gate resistor 6-2 connected in series with it becomes the gate resistance during turn-off. By utilizing the unidirectional conductivity of the diodes, the gate resistance during device turn-on and turn-off can be individually controlled. By matching the optimal turn-on and turn-off gate resistances, the optimal performance of the device can be achieved.

[0045] Optionally, the switching power chip 7 is a power chip with a gate, which may be, but is not limited to, an IGBT chip or a MOSFET chip.

[0046] In some embodiments, a power module with independently controlled gate turn-on and turn-off resistors can be applied to a power module including multiple switching power chips 7. The following are just some examples of application scenarios.

[0047] See Figures 4 to 7 In one embodiment, the power module includes:

[0048] The outer casing 111 provides support and protection for the device;

[0049] Bushing 112 secures the package housing 111 to the copper substrate 1 and also provides protection during device mounting;

[0050] Power terminals 2-1, 2-2, and 2-3 are electrically connected to the external busbar of the device to transmit electrical energy.

[0051] Signal terminals 3-1, 3-2, 3-3, and 3-4 are connected to an external driver board to transmit drive signals to control the on / off state of the device.

[0052] Gate resistors 6-1, 6-2, 6-3, and 6-4 limit the control power of the device switching, providing optimal control power;

[0053] Diodes 4-1, 4-2, 4-3, and 4-4 utilize their unidirectional conductivity to achieve individual control of the device's turn-on and turn-off states.

[0054] Copper substrate 1 provides heat dissipation and mounting support for the device;

[0055] The DBC substrate 5 consists of an upper copper layer, a middle ceramic insulating layer, and a lower copper layer. The upper copper layer is etched with a layout that meets the requirements according to the circuit topology in order to realize the electrical functions of a specific circuit topology.

[0056] The switching power chip 7 performs corresponding switching actions according to the control signal to control the conduction and cutoff of current.

[0057] The freewheeling power chip 9 provides freewheeling power when the device is turned off, preventing the device from being damaged by overcurrent.

[0058] Bonding wire 8 connects the power chip to a specific copper layer area on the DBC to transmit electrical energy and signals.

[0059] Solder is used to solder DBCs, power chips, signal terminals, and power terminals, serving functions such as fixing, electrical transmission, and heat dissipation.

[0060] In one embodiment, the device structure further includes a silicone gel filler filled within the package housing, which serves to isolate potential and buffer stress. The filler may also be other thermoforming materials, and is not limited thereto.

[0061] Specifically, the power module's structure and operation are as follows:

[0062] 1. The copper substrate 1 and the lower copper layer of the DBC substrate 5 are soldered together.

[0063] 2. The DBC substrate 5 is composed of 5 DBC substrates.

[0064] 3. The bottom soldering surfaces of the power terminal 2 and signal terminal 3 are soldered to a specific area of ​​the copper layer layout on the DBC substrate 5 using solder. The middle ceramic layer of the DBC substrate 5 is an insulating material that provides insulation protection for the device, and is generally made of materials such as Al2O3 and AlN.

[0065] 4. The power terminal 2 consists of three power terminals 2-1, 2-2, and 2-3. The signal terminal 3 consists of four signal terminals 3-1, 3-2, 3-3, and 3-4.

[0066] 5. The lower surface collector (drain) of the switching power chip 7 is soldered to a specific area of ​​the copper layer layout on the DBC substrate 5 using solder. The upper surface emitter (source) and gate are connected to the specific area of ​​the copper layer layout on the DBC substrate 5 and the upper surface anode of the freewheeling power chip 9 via bonding leads 8 to realize its electrical function.

[0067] 6. The switching power chip 7 consists of 8 switching power chips, namely 7-1, 7-2, 7-3, 7-4, 7-5, 7-6, 7-7, and 7-8.

[0068] 7. The cathode on the lower surface of the freewheeling power chip 9 is soldered to a specific area of ​​the copper layer layout on the DBC substrate 5 using solder, and the anode on the upper surface is connected to the emitter (source) on the upper surface of the switching power chip 7 and the specific area of ​​the copper layer layout on the DBC substrate 5 via bonding wires 8, so as to realize its freewheeling function.

[0069] 8. The freewheeling power chip 9 consists of 8 freewheeling power chips, namely 9-1, 9-2, 9-3, 9-4, 9-5, 9-6, 9-7, and 9-8.

[0070] 9. The bonding wire 8 is connected to the emitter (source) and gate on the upper surface of the switching power chip 7 by ultrasonic welding, and is connected to a specific area of ​​the copper layer on the DBC substrate 5 to achieve electrical connection for a specific function.

[0071] 10. The bonding wire 8 is ultrasonically welded to the upper surface anode of the freewheeling power chip 9 and connected to a specific layout area of ​​the copper layer on the DBC substrate 5 to achieve an electrical connection for a specific function.

[0072] 11. The lower surface cathode of the diode 4 is soldered to a specific area of ​​the upper surface layout of the DBC substrate 5 by solder, and the upper surface anode is bonded to a specific area of ​​the upper surface layout of the DBC substrate 5 by bonding wire 8 to realize its electrical function.

[0073] 12. The diode 4 is composed of four diode chips, namely 4-1, 4-2, 4-3, and 4-4.

[0074] 13. The left and right ends of the gate resistor 6 are soldered together with a specific layout area of ​​the copper layer on the DBC substrate 5 by solder to achieve a specific electrical function.

[0075] 14. The gate resistor 6 consists of four resistors, namely 6-1, 6-2, 6-3, and 6-4.

[0076] 15. The circuit topology for independently controlling the gate turn-on and turn-off resistance using diode 4 and gate resistor 6 is shown. When a positive voltage turn-on signal is transmitted from signal terminal 3-4 or signal terminal 3-1, D1 (diode 4-1) or D3 (diode 4-4) is forward-biased (the upper and lower bridges inside the device will not be turned on simultaneously). The resistor R1 (gate resistor 6-1) or R3 (gate resistor 6-4) connected in series is the gate resistance when the device is turned on. D2 (diode 4-2) or D4 (diode 4-3) is reverse-biased and cut off. The gate resistor R2 (gate resistor 6-2) or R4 (gate resistor 6-3) connected in series does not work. Similarly, when signal terminal 3-4 or signal terminal 3-1 transmits a negative voltage turn-off signal, D1 (diode 4-1) or D3 (diode 4-4) is reverse-biased and cut off. The series-connected resistors R1 (gate resistor 6-1) or R3 (gate resistor 6-4) are inactive, while D2 (diode 4-2) or D4 (diode 4-3) is conductive. The series-connected gate resistors R2 (gate resistor 6-2) or R4 (gate resistor 6-3) are the gate resistances when the device is turned off. By utilizing the unidirectional conductivity of diodes, individual control of the gate resistance during device turn-on and turn-off is achieved. Matching the optimal turn-on and turn-off gate resistances allows for the realization of optimal device performance.

[0077] 16. The encapsulation shell 111 has openings for corresponding signal terminals 3, power terminals 2, and bushings 112 to facilitate the installation of corresponding devices. The encapsulation shell is made of insulating material and also provides protection and support for the devices.

[0078] 17. The bushing 112 connects the copper substrate 1 to the package housing 111 through the opening position of the package housing 111, and also provides a certain degree of protection for subsequent device installation.

[0079] 18. The correspondence between the ports in the circuit topology and the physical ports is as follows: DC+ port corresponds to power terminal 2-3, DC- port corresponds to power terminal 2-2, and AC port corresponds to power terminal 2-1. G1 gate control port corresponds to signal terminal 3-4, E1 emitter reference control port corresponds to signal terminal 3-3, G2 gate control port corresponds to signal terminal 3-1, and E2 emitter reference control port corresponds to signal terminal 3-2. D1 corresponds to diode 4-1, R1 corresponds to gate resistor 6-1, D2 corresponds to diode 4-2, R2 corresponds to gate resistor 6-2, D3 corresponds to diode 4-4, R3 corresponds to gate resistor 6-4, D4 corresponds to diode 4-3, and R4 corresponds to gate resistor 6-3.

[0080] Unless otherwise specified, the materials used for the above components can be selected according to the actual needs of the device to achieve the above functions.

[0081] See Figure 8In some embodiments, the power module with independently controlled gate turn-on and turn-off resistors can be a single-phase inverter power module.

[0082] See Figure 9 In some embodiments, the power module with independently controlled gate turn-on and turn-off resistors can be a three-phase inverter power module.

[0083] In summary, the gate resistor of the power module with independently controlled gate turn-on and turn-off resistors of this invention is integrated inside the power device, reducing the use of external components, lowering the design complexity and wiring difficulty of the circuit board, and reducing the space occupied on the circuit board. The integrated gate resistor has a more stable connection with the internal power semiconductor device, avoiding contact problems caused by poor soldering, vibration, etc., which improves the reliability of the entire device. The integrated gate resistor can effectively shorten the wiring length of the gate circuit, reduce the influence of parasitic inductance and capacitance, and help improve the overall performance of the system. The resistor integrated inside the traditional device does not have the ability to assign different gate resistances when the device is turned on and off. This invention achieves the ability to assign different gate resistances when the device is turned on and off, and can assign the optimal turn-on resistance and the optimal turn-off resistance according to the switching characteristics of the power chip to achieve the best performance of the device.

[0084] It should be noted that all the devices (parts whose specific structures are not specified) selected in this application are general standard parts or parts known to those skilled in the art, and their structures and principles can be known to those skilled in the art through technical manuals or conventional experimental methods.

[0085] In the description of the embodiments of this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0086] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0087] Based on the above-described preferred embodiments of this utility model, and through the foregoing description, those skilled in the art can make various changes and modifications without departing from the technical concept of this utility model. The technical scope of this utility model is not limited to the contents of the specification.

Claims

1. A power module with independently controlled gate turn-on and turn-off resistors, characterized in that, include: Base plate (1); DBC substrate (5) is mounted on base plate (1); Several switching power chips (7) are disposed on the DBC substrate (5); Several gate signal terminals (3); the gate signal terminals (3) are electrically connected to the gate of the corresponding switching power chip (7) through a gate resistor selection circuit (4) disposed on the DBC substrate (5); wherein The gate resistor selection circuit (4) includes a first resistor circuit (41) and a second resistor circuit (42) connected in parallel. The first resistor circuit (41) includes a first gate resistor (6-1) and a first diode (4-1) connected in series. The second resistor circuit (42) includes a second gate resistor (6-2) and a second diode (4-2) connected in series, and the conduction direction of the second diode (4-2) is opposite to that of the first diode (4-1).

2. The power module with independently controlled gate turn-on and turn-off resistors according to claim 1, characterized in that, The power module with independently controlled gate turn-on and turn-off resistors also includes: a housing (111) covered on the base plate (1). One end of the gate signal terminal (3) extends out of the outer casing (111), and the other end is electrically connected to the gate of the switching power chip (7) through the gate resistor selection circuit (4).

3. The power module with independently controlled gate turn-on and turn-off resistors according to claim 1, characterized in that, The cathode of the first diode (4-1) is soldered to the first copper region (51) on the DBC substrate (5), and the anode is connected to the second copper region (52) through the lead (8); the first copper region (51) is connected to the first gate resistor (6-1), and the second copper region (52) is soldered with a gate signal terminal (3). The cathode of the second diode (4-2) is soldered to the second copper region (52) on the DBC substrate (5), and the anode is connected to the second gate resistor (6-2) via a lead (8).

4. The power module with independently controlled gate turn-on and turn-off resistors according to claim 1, characterized in that, The switching power chip (7) includes an IGBT chip or a MOSFET chip.

5. The power module with independently controlled gate turn-on and turn-off resistors according to claim 1, characterized in that, The power module is a single-phase inverter power module.

6. The power module with independently controlled gate turn-on and turn-off resistors according to claim 1, characterized in that, The power module is a three-phase inverter power module.

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