Wafer fixing device

Abstract

The application relates to the technical field of semiconductor processing equipment, in particular to a wafer fixing device, which comprises a base and a limiting support, the base is provided with a first clamping groove, the first clamping groove is used for supporting a wafer, the first clamping groove can support and hold the wafer, the limiting support is provided with a second clamping groove, the wafer is clamped into the second clamping groove, the second clamping groove can hold and fix the wafer, the second clamping groove and the first clamping groove form multi-point support for the wafer, cooperatively fix the wafer, improve the stability of the wafer on the wafer fixing device, and improve the fixing effect of the wafer fixing device on the wafer.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing equipment technology, specifically to a wafer fixing device. Background Technology

[0002] Silicon carbide boats, characterized by high strength, high purity, high thermal conductivity, and good thermal shock resistance, are widely used in semiconductor processes. Silicon carbide boats typically serve as wafer supports in semiconductor processes, directly contacting the wafer; therefore, the boat's structural design directly impacts the wafer's performance.

[0003] In related technologies, silicon carbide wafer boats typically have a groove into which wafer clips are inserted for fixation. However, the wafers are not securely fixed in the wafer boat and require further improvement. Utility Model Content

[0004] The embodiments of this application provide a wafer fixing device that can solve the technical problem of unstable wafer fixing in a wafer boat.

[0005] In a first aspect, embodiments of this application provide a wafer fixing device, comprising:

[0006] The base has a first slot for supporting the wafer;

[0007] A limiting bracket is connected to the base, and the limiting bracket is provided with a second slot for fixing the wafer.

[0008] In one embodiment, there are two limiting brackets, which are disposed on both sides of the base, and each limiting bracket is provided with the second slot.

[0009] In one embodiment, the first slot is an arc-shaped slot.

[0010] In one embodiment, the central angle of the first slot is between 10° and 160°.

[0011] In one embodiment, the first slot includes a first slot wall and a second slot wall that are inclined, the distance between the first slot wall and the second slot wall gradually decreases from top to bottom, and the lower end of the first slot wall is connected to the lower end of the second slot wall.

[0012] In one embodiment, the included angle between the first tank wall and the second tank wall is between 30° and 120°.

[0013] In one embodiment, the second slot is an arc-shaped slot.

[0014] In one embodiment, the central angle of the second slot is between 10° and 160°.

[0015] In one embodiment, the second slot includes a guide portion and a receiving portion that are interconnected, the guide portion being used to guide the wafer to the receiving portion, and the receiving portion being capable of accommodating a portion of the wafer.

[0016] In one embodiment, the first slot and the second slot are spaced apart along a first direction, which is perpendicular to the thickness direction of the base;

[0017] The guide portion includes a first guide slope and a second guide slope spaced apart along a second direction. The distance between the first guide slope and the second guide slope gradually decreases along the direction close to the receiving portion. The angle formed by the extended surface of the first guide slope and the extended surface of the second guide slope is greater than 0° and less than 180°. The second direction is perpendicular to the first direction and the thickness direction of the base.

[0018] In one embodiment, the angle formed by the extended surface of the first guide slope and the extended surface of the second guide slope is between 30° and 120°.

[0019] In one embodiment, the depth of the first card slot is less than or equal to 10 mm, and / or the depth of the second card slot is less than or equal to 10 mm.

[0020] In one embodiment, the limiting bracket includes an extension arm and a reinforcing portion. The extension arm is connected to the base, the reinforcing portion is disposed on the extension arm, and the average thickness of the reinforcing portion is greater than the average thickness of the extension arm. The second slot is disposed on the reinforcing portion.

[0021] In one embodiment, the limiting bracket has weight-reducing holes.

[0022] In one embodiment, the base and the limiting bracket are integrally formed.

[0023] The beneficial effects of the embodiments of this application are as follows:

[0024] The wafer fixing device in this embodiment includes a base and a limiting bracket. The base is provided with a first slot for supporting the wafer. The first slot can support and hold the wafer. The limiting bracket is provided with a second slot. After the wafer is inserted into the second slot, the second slot can hold, fix and limit the wafer. The second slot and the first slot provide multi-point support for the wafer, which works together to fix the wafer, improve the stability of the wafer on the wafer fixing device and improve the fixing effect of the wafer fixing device on the wafer. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 This is a three-dimensional structural diagram of the wafer fixing device and the wafer provided in the embodiments of this application;

[0027] Figure 2 This is a top view of a wafer mounting provided in an embodiment of this application;

[0028] Figure 3 This application Figure 1 A front view of the wafer fixture and the wafer;

[0029] Figure 4 This is a schematic diagram of a cross-section of the first card slot provided in an embodiment of this application;

[0030] Figure 5 This is a schematic diagram of another cross-section of the first card slot provided in an embodiment of this application;

[0031] Figure 6 This is a schematic diagram of a cross-section of the second card slot provided in an embodiment of this application;

[0032] Figure 7 This is a schematic diagram of another cross-section of the second card slot provided in an embodiment of this application;

[0033] Figure 8 This is a front view of the wafer mounting provided in an embodiment of this application.

[0034] Figure label:

[0035] 100. Wafer fixing device;

[0036] 1. Base; 11. First slot; 111. First slot wall; 112. Second slot wall;

[0037] 2. Limiting bracket; 21. Second slot; 211. Guide part; 2111. First guide slope; 2112. Second guide slope; 212. Receiving part; 22. Extension arm; 23. Reinforcing part; 24. Weight reduction hole;

[0038] 200. Wafer. Detailed Implementation

[0039] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In addition, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application. In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device.

[0040] Please refer to Figure 1 and Figure 8 The wafer fixing device 100 of this application includes a base 1 and a limiting bracket 2. The base 1 is provided with a first slot 11 for supporting the wafer 200. The first slot 11 can support and support the wafer 200. The limiting bracket 2 is provided with a second slot 21. After the wafer 200 is inserted into the second slot 21, the second slot 21 can hold, fix and limit the wafer 200. The second slot 21 and the first slot 11 provide multi-point support for the wafer 200, and work together to fix the wafer 200, improving the stability of the wafer 200 on the wafer fixing device 100 and improving the fixing effect of the wafer fixing device 100 on the wafer 200. In addition, the first slot 11 and the second slot 21 can disperse the force, avoid single-point stress concentration, and reduce the risk of deformation or breakage of the wafer 200 due to excessive local stress.

[0041] In this embodiment, the material of the wafer fixing device 100 can be silicon carbide, and the purity of silicon carbide can be greater than or equal to 99.996%. High-purity silicon carbide material has characteristics such as high temperature resistance, high hardness, high thermal conductivity and chemical stability, which can improve and reduce the deformation of the wafer 200 due to thermal stress, reduce the contamination of the wafer 200, and ensure the cleanliness of the wafer 200 surface.

[0042] In one embodiment, reference Figures 1 to 3The number of limiting brackets 2 is two, and the two limiting brackets 2 are respectively disposed on both sides of the base 1. Each limiting bracket 2 is provided with a second slot 21. In this embodiment, on the one hand, the wafer 200 can be simultaneously inserted into the first slot 11 and the two second slots 21. The first slot 11 and the two second slots form a three-point support structure for the wafer 200. Utilizing the principle of geometric stability, the wafer 200 can still be effectively fixed while reducing the contact area between the wafer 200 and each slot. This reduces the thermal stress generated by the wafer fixing device 100 on the wafer 200 due to the difference in the coefficient of linear expansion between the wafer fixing device 100 and the wafer 200 during the heating process. On the other hand, compared with four or more slots or a single large-volume slot, the wafer fixing device 100 in this embodiment can reduce the number of slots and the size of each slot, thereby reducing the amount of processing required for the slots and lowering the processing difficulty of the wafer fixing device 100.

[0043] In one specific embodiment, two limiting brackets 2 are respectively disposed on both sides of the base 1 along a first direction, and each first direction is perpendicular to the thickness direction of the base 1. The first direction can be a left-right direction or a front-back direction, and is not limited here.

[0044] In one embodiment, reference Figure 1 and Figure 5 The first slot 11 is an arc-shaped slot. Since the wafer 200 is generally circular, the arc-shaped first slot 11 increases the fit between the first slot 11 and the wafer 200, as well as the contact area between them, thus better securing the wafer 200 and reducing wafer 200 wobble. This reduces scratches on the wafer 200 caused by wafer 200 wobble during transport. Furthermore, the arc-shaped first slot 11 evenly distributes the supporting stress, reducing edge damage to the wafer 200 caused by localized stress concentration. In this embodiment, it should be noted that "arc-shaped first slot 11" means that the cross-sectional shape of the first slot 11 along the second direction is arc-shaped, and the second direction is perpendicular to the first direction and the thickness direction of the base 1.

[0045] In one embodiment, reference Figure 3 and Figure 5The central angle α2 of the first slot 11 is between 10° and 160°. Optionally, the central angle α2 of the first slot 11 can be any one or any two of 10°, 30°, 60°, 100°, 130°, 160°, etc., and is not limited here. In this embodiment, since the wafer fixing device 100 has a large hardness, and the curvature of the first slot 11 needs to be processed after sintering to ensure its accuracy, when α2 is too large, it is easy to cause the volume of the first slot 11 to be large, the amount of processing of the first slot 11 to be increased, and the processing difficulty and processing cost of the wafer fixing device 100 to be increased, which is not conducive to the mass production of the wafer fixing device 100; when α2 is too small, it is easy to cause the contact area between the first slot 11 and the wafer 200 to be too small, and the wafer 200 is easy to shake due to insecure fixing during the transfer process, which will cause damage to the wafer 200.

[0046] In one embodiment, reference Figure 1 and Figure 4 The first slot 11 is disposed on the upper surface of the base 1. The first slot 11 includes a first slot wall 111 and a second slot wall 112 disposed at an inclination. The lower end of the first slot wall 111 is connected to the lower end of the second slot wall 112. The distance between the first slot wall 111 and the second slot wall 112 gradually decreases from top to bottom. The first slot wall 111 and the second slot wall 112 are inclined, which reduces the processing workload of the first slot 11 while ensuring that the wafer 200 is fixed. Furthermore, since there may be a certain positional error between the position where the automated wafer loading equipment picks up the wafer 200 and the first slot 11, when the wafer 200 is misaligned or tilted, gravity will drive the wafer 200 to slide along the first slot wall 111 and the second slot wall 112 to the bottom of the first slot 11, automatically correcting the positional deviation of the wafer 200 during storage and improving the fault tolerance of the wafer fixing device 100. In addition, the open structure of the first slot 11 allows the thickness of the wafer 200 to vary within a certain range without affecting the fixing effect, and the first slot 11 can accommodate wafers 200 of various thicknesses. In this embodiment, the cross-sectional shape of the first slot 11 along the first direction can be V-shaped.

[0047] In one embodiment, reference Figure 1 and Figure 4The included angle α1 between the first slot wall 111 and the second slot wall 112 is between 30° and 120°. Optionally, the included angle α1 between the first slot wall 111 and the second slot wall 112 can be any one or any two of 30°, 60°, 90°, 110°, 120°, etc., and is not limited here. In this embodiment, when α1 is too large, it is easy to cause the space occupied by a single first slot 11 to be too large, and the number of first slots 11 on the wafer fixing device 100 and the number of wafers 200 that can be placed to be too small; when α1 is too small, it is easy to cause the upper opening of a single first slot 11 to be too small, the wafers 200 to be placed too densely, and the fault tolerance space of the wafer fixing device 100 to be too small.

[0048] In one embodiment, reference Figure 1 and Figure 2 The second slot 21 is an arc-shaped slot. The arc shape of the second slot 21 increases the fit between the second slot 21 and the wafer 200, and the contact area between the second slot 21 and the wafer 200, thus better securing the wafer 200 and reducing wafer wobbling. This reduces scratches on the wafer 200 caused by wafer wobbling during transport. Furthermore, the arc shape of the second slot 21 evenly distributes the supporting stress, reducing edge damage to the wafer 200 caused by localized stress concentration. In this embodiment, it should be noted that "arc-shaped slot 21" means that the cross-sectional shape of the second slot 21 along the second direction is an arc, and the second direction is perpendicular to the first direction and the thickness direction of the base 1.

[0049] In one embodiment, reference Figure 3 and Figure 7 The central angle β2 of the second slot 21 is between 10° and 160°. Optionally, the central angle β2 of the second slot 21 can be any one or any two of 10°, 30°, 60°, 100°, 130°, 160°, etc., and is not limited here. In this embodiment, since the wafer fixing device 100 has a large hardness, and the curvature of the second slot 21 needs to be processed after sintering to ensure its accuracy, when β2 is too large, it is easy to cause the volume of the second slot 21 to be large, the amount of processing of the second slot 21 to be increased, and the processing difficulty and processing cost of the wafer fixing device 100 to be increased, which is not conducive to the mass production of the wafer fixing device 100; when β2 is too small, it is easy to cause the contact area between the second slot 21 and the wafer 200 to be too small, and the wafer 200 is easy to shake due to insecure fixing during the transfer process, thereby causing damage to the wafer 200.

[0050] In one embodiment, reference Figure 1 and Figure 6The second slot 21 includes a guide portion 211 and a receiving portion 212 that are interconnected. The guide portion 211 is used to guide the wafer 200 to the receiving portion 212, and the receiving portion 212 can accommodate a portion of the wafer 200. The guide portion 211 can guide the wafer 200 to slide quickly into the receiving portion 212, correct the positional deviation of the wafer 200 during storage, and improve the fault tolerance of the wafer fixing device 100.

[0051] In one embodiment, reference Figure 1 and Figure 6 The first slot 11 and the second slot 21 are spaced apart along a first direction, which is perpendicular to the thickness direction of the base 1. The guide portion 211 includes a first guide slope 2111 and a second guide slope 2112 spaced apart along a second direction. The distance between the first guide slope 2111 and the second guide slope 2112 gradually decreases along the direction close to the receiving portion 212. The angle formed by the extended surface of the first guide slope 2111 and the extended surface of the second guide slope 2112 is greater than 0° and less than 180°. The second direction is perpendicular to the first direction and the thickness direction of the base 1. The first guide slope 2111 and the second guide slope 2112 form a converging guide channel. Under the action of external force, the wafer 200 can automatically slide into the receiving portion 212 along the first guide slope 2111 and the second guide slope 2112, thereby reducing the positioning accuracy requirements of the automated equipment and improving the fault tolerance of the wafer fixing device 100. In this embodiment, the cross-sectional shape of the second slot 21 along the thickness direction of the base 1 can be Y-shaped.

[0052] In one embodiment, reference Figure 6 The included angle β1 formed by the extended surfaces of the first guide slope 2111 and the second guide slope 2112 is between 30° and 120°. Optionally, the included angle β1 formed by the extended surfaces of the first guide slope 2111 and the second guide slope 2112 can be any one or any two of 30°, 60°, 80°, 100°, 120°, etc., and is not limited here. In this embodiment, when β1 is too large, it is easy to cause the space occupied by a single second slot 21 to be too large, and the number of second slots 21 on the wafer fixing device 100 and the number of wafers 200 that can be placed to be too small; when β1 is too small, it is easy to cause the opening of the guide portion 211 of a single second slot 21 to be too small, the wafers 200 to be placed too densely, and the fault tolerance space of the wafer fixing device 100 to be too small.

[0053] In one embodiment, the number of first slots 11 on the base 1 can be 50-100, and the multiple first slots 11 can be arranged sequentially along the second direction; the number of second slots 21 on each limiting bracket 2 can be 50-100, and the multiple second slots 21 can be arranged sequentially along the second direction, and the multiple second slots 21 correspond one-to-one with the multiple first slots 11.

[0054] In one embodiment, the depth of the first slot 11 is less than or equal to 10 mm, and / or the depth of the second slot 21 is less than or equal to 10 mm. In this embodiment, the depth of the first slot 11 and / or the second slot 21 being less than or equal to 10 mm can reduce the amount of processing required for the wafer fixing device 100, which is beneficial to the production of the wafer fixing device 100.

[0055] In one embodiment, reference Figure 1 and Figure 8 The limiting bracket 2 includes an extension arm 22 and a reinforcing part 23. The extension arm 22 is connected to the base 1, and the reinforcing part 23 is disposed on the extension arm 22. The average thickness of the reinforcing part 23 is greater than the average thickness of the extension arm 22. The second slot 21 is disposed on the reinforcing part 23. In this embodiment, the average thickness of the reinforcing part 23 is greater than the average thickness of the extension arm 22. This can increase the mechanical strength of the reinforcing part 23 and make it more rigid. The second slot 21 is disposed on the reinforcing part 23, which can effectively reduce the deformation of the second slot 21 caused by temperature changes or mechanical loads, and ensure the spacing and positional accuracy of the second slot 21.

[0056] In this embodiment, the position of the reinforcing part 23 is not limited. For example, the reinforcing part 23 may be provided at the end of the extension arm 22 away from the base 1. Alternatively, the reinforcing part 23 may be provided in the middle of the extension arm 22. Alternatively, the reinforcing part 23 may be provided at the end of the extension arm 22 away from the base 1, and the second slot 21 may be located on the side of the reinforcing part 23 facing the base 1.

[0057] In one embodiment, the average thickness of the reinforcing portion 23 is between 10mm and 50mm. Optionally, the average thickness of the reinforcing portion 23 can be any one or any two of 10mm, 20mm, 30mm, 40mm, and 50mm, and is not limited herein. In this embodiment, the average thickness of the reinforcing portion 23 is set between 10mm and 50mm, so that the reinforcing portion 23 has a certain structural strength, while reducing the excessive weight of the wafer fixing device 100 due to excessive thickness.

[0058] In one embodiment, the average thickness of the base 1 and / or the limiting bracket 2 is between 5mm and 30mm. Optionally, the average thickness of the base 1 and / or the limiting bracket 2 can be any one or any two of 5mm, 10mm, 15mm, 20mm, 30mm, etc., and is not limited here. In this embodiment, the average thickness of the reinforcing part 23 is set between 10mm and 50mm, so that the reinforcing part 23 has a certain structural strength, while reducing the excessive weight of the wafer fixing device 100 due to excessive thickness.

[0059] In one embodiment, reference Figure 1The limiting bracket 2 has a weight-reducing hole 24. The weight-reducing hole 24 can reduce the weight of the wafer fixing device 100, making it easier to transport the wafer fixing device 100.

[0060] In one specific embodiment, the weight reduction hole 24 can be obtained by water-guided laser cutting after sintering. The weight reduction hole 24 has a long side and a short side. The length of the long side is between 100mm and 280mm, and the length of the short side is between 60mm and 100mm. The connection between the long side and the short side can be a right angle transition or a rounded transition. The processing depth of the weight reduction hole 24 is greater than 0mm and less than or equal to 10mm.

[0061] In one embodiment, reference Figure 1 and Figure 3 The height h of the wafer fixing device 100 is between 30mm and 180mm, the length a of the wafer fixing device 100 along the second direction is between 67mm and 135mm, and the width b of the wafer fixing device 100 along the first direction is between 55mm and 720mm. Setting the height, length, and width of the wafer fixing device 100 within the above ranges facilitates the transfer and transportation of the wafer fixing device 100.

[0062] In one embodiment, reference Figure 1 and Figure 3 The base 1 and the limiting bracket 2 are integrally formed. This avoids the bolt, welding or snap-fit ​​connection of traditional split designs, eliminates the risk of micro-deformation caused by different coefficients of thermal expansion of materials or assembly gaps, and improves the structural stability of the wafer fixing device 100.

[0063] Secondly, embodiments of this application provide a method for fabricating a wafer fixing device, comprising the following steps:

[0064] S1: Raw material for preparing silicon carbide graded powder;

[0065] S2: Silicon carbide graded powder raw materials are used to form silicon carbide boat blanks, and the blanks are impregnated, cured, and graphitized at high temperature to obtain intermediates;

[0066] S3: The intermediate is sintered at high temperature to obtain a silicon carbide substrate;

[0067] S4: The silicon carbide substrate is grooved and precision machined, and then a dense silicon carbide coating is formed on the surface of the silicon carbide substrate by chemical vapor deposition process to obtain the wafer fixing device.

[0068] The wafer fixing device in this embodiment uses silicon carbide graded powder as raw material. The purity of the wafer fixing device is above 99.998%, the sphericity is above 0.8, and the loose packing density is above 1.3 g / cm³. 3 The above-mentioned tap density is 1.9 g / cm³. 3 above.

[0069] In one embodiment, the silicon carbide graded powder raw material is composed of coarse silicon carbide powder and fine silicon carbide powder. The particle size of the coarse silicon carbide powder is between 60 μm and 200 μm, and the particle size of the fine powder is between 10 μm and 50 μm. The particle size ratio of coarse silicon carbide powder to fine silicon carbide powder is between (3-15):1. Preferably, the particle size ratio of coarse silicon carbide powder to fine silicon carbide powder is 7:1-10:1. The mass ratio of coarse silicon carbide powder to fine silicon carbide powder is between 6:4 and 8:2. Preferably, the mass ratio of coarse silicon carbide powder to fine silicon carbide powder is 7:3.

[0070] In one embodiment, the silicon carbide substrate may be formed by one or more of the following methods: dry pressing, isostatic pressing, 3D printing, hot pressing, injection molding, casting, and gel casting.

[0071] In this embodiment, the 3D printing method includes one or more of selective laser sintering (SLS), stereolithography (SLA), and three-dimensional printing bonding (3DP).

[0072] In one embodiment, the impregnation solution used for preform impregnation and curing is a mixture of phenolic resin, furan resin, or epoxy resin and ethanol, with the resin content being 20%-80%.

[0073] In one embodiment, the carbon content of the intermediate obtained after impregnation, curing, and high-temperature graphitization of the green blank is between 15% and 25%.

[0074] In one embodiment, the sintering temperature is between 1600℃ and 2000℃, the holding time is between 6h and 9h, and the sintering atmosphere is a vacuum.

[0075] In one embodiment, the silicon carbide particles used in the silicon carbide graded powder raw material have a purity of 99.998% or higher and an average particle size between 0.1 cm and 5 cm; the mass of silicon carbide particles in the silicon carbide graded powder raw material is 1 to 2.5 times the mass of the intermediate.

[0076] In one embodiment, the grooving finishing method includes one or more of the following: computer numerical control (CNC) machining, diamond wheel grinding, ultrasonic machining, and water-guided laser machining. During water-guided laser machining, the workpiece can remain stationary or move upwards in the y-direction towards the nozzle while the laser is cutting. Simultaneously, the laser water jet can be perpendicular to the workpiece surface or rotated 0°-45°. Alternatively, during water-guided laser machining, the workpiece can move in the x, y, and z directions, and can rotate in the xoy plane. The workpiece's movable range in the x-direction is 0mm-200mm, in the y-direction is 0mm-200mm, in the z-direction is 0mm-100mm, and the workpiece's angular rotation range in the xoy plane is 0°-360°.

[0077] In this embodiment, the forming and processing accuracy of the wafer fixing device is less than ±0.1 mm, and the dimensional shrinkage rate of the preform is less than ±1%; the density of the silicon carbide substrate is 3.0 g / cm³. 3 ~3.1g / cm 3 Between these parameters, the bending strength is greater than 200 MPa, the purity can reach over 99.996%, and the content of metallic impurities is less than 20 ppm.

[0078] In one embodiment, a silicon carbide substrate is grooved and then a dense silicon carbide coating is formed on the surface of the silicon carbide substrate by chemical vapor deposition. The purity of the silicon carbide coating prepared by chemical vapor deposition exceeds 99.9999%, and the thickness of the silicon carbide coating is between 30 μm and 100 μm.

[0079] The embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A wafer fixing device, characterized in that, include: The base has a first slot for supporting the wafer; A limiting bracket is connected to the base, and the limiting bracket is provided with a second slot for fixing the wafer.

2. The wafer fixing device according to claim 1, characterized in that, The number of limiting brackets is two, and the two limiting brackets are disposed on both sides of the base, and each limiting bracket is provided with the second slot.

3. The wafer fixing device according to claim 1, characterized in that, The first card slot is an arc-shaped card slot.

4. The wafer fixing device according to claim 3, characterized in that, The central angle of the first slot is between 10° and 160°.

5. The wafer fixing device according to claim 1, characterized in that, The first slot includes a first slot wall and a second slot wall that are inclined. The distance between the first slot wall and the second slot wall gradually decreases from top to bottom. The lower end of the first slot wall is connected to the lower end of the second slot wall.

6. The wafer fixing device according to claim 5, characterized in that, The included angle between the first tank wall and the second tank wall is between 30° and 120°.

7. The wafer fixing device according to claim 1, characterized in that, The second slot is an arc-shaped slot.

8. The wafer fixing device according to claim 7, characterized in that, The central angle of the second slot is between 10° and 160°.

9. The wafer fixing device according to claim 1, characterized in that, The second slot includes a guide portion and a receiving portion that are interconnected. The guide portion is used to guide the wafer to the receiving portion, and the receiving portion is capable of accommodating a portion of the wafer.

10. The wafer fixing device according to claim 9, characterized in that, The first slot and the second slot are spaced apart along a first direction, which is perpendicular to the thickness direction of the base; The guide portion includes a first guide slope and a second guide slope spaced apart along a second direction. The distance between the first guide slope and the second guide slope gradually decreases along the direction close to the receiving portion. The angle formed by the extended surface of the first guide slope and the extended surface of the second guide slope is greater than 0° and less than 180°. The second direction is perpendicular to the first direction and the thickness direction of the base.

11. The wafer fixing device according to claim 10, characterized in that, The angle formed by the extended surface of the first guide slope and the extended surface of the second guide slope is between 30° and 120°.

12. The wafer fixing device according to any one of claims 1-11, characterized in that, The depth of the first card slot is less than or equal to 10 mm, and / or the depth of the second card slot is less than or equal to 10 mm.

13. The wafer fixing device according to any one of claims 1-11, characterized in that, The limiting bracket includes an extension arm and a reinforcing part. The extension arm is connected to the base, and the reinforcing part is disposed on the extension arm. The average thickness of the reinforcing part is greater than the average thickness of the extension arm, and the second slot is disposed on the reinforcing part.

14. The wafer fixing device according to any one of claims 1-11, characterized in that, The limiting bracket has weight-reducing holes.

15. The wafer fixing device according to any one of claims 1-11, characterized in that, The base and the limiting bracket are integrally formed.

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