Transistor detection circuit, chip and electronic device

Abstract

The application relates to a transistor detection circuit, a chip and an electronic device. The transistor detection circuit comprises a voltage generation module connected with a control end of a transistor to be detected, and used for generating a bias voltage; and a voltage detection module connected with a detected end of the transistor to be detected, and used for generating a to-be-detected voltage under the action of the bias voltage; wherein the to-be-detected voltage is used as an index for measuring the performance of the transistor to be detected. Thus, the transistor detection circuit can monitor whether the transistor is aged and the aging degree in real time, so that a prediction can be made in advance when the performance of the transistor is seriously consumed, and potential risks of the chip in long-term operation can be avoided.

Description

Technical Field

[0001] This application relates to the field of integrated circuit technology, and more particularly to a transistor detection circuit, chip, and electronic device. Background Technology

[0002] Despite significant advancements in integrated circuit technology, current chip design still faces challenges in determining the degree and extent of transistor aging after a certain period of operation. This makes it difficult to anticipate severe performance degradation in transistors, leading to potential risks during long-term chip operation. Utility Model Content

[0003] This application provides a transistor detection circuit, chip, and electronic device. The technical solution of this application is as follows:

[0004] The first aspect of this application provides a transistor detection circuit, comprising:

[0005] A voltage generation module, which is connected to the control terminal of the transistor under test, is used to generate a bias voltage;

[0006] A voltage detection module is connected to the detection terminal of the transistor under test and is used to generate a detection voltage under the bias voltage; wherein the detection voltage is used as an indicator to measure the performance of the transistor under test.

[0007] A second aspect of this application provides a chip including a detection circuit for the transistor as described above.

[0008] A third aspect of this application provides an electronic device comprising: a chip as described above.

[0009] The technical solutions provided by the embodiments of this application bring at least the following beneficial effects:

[0010] The transistor detection circuit of this application includes a voltage generation module and a voltage detection module. The voltage generation module is connected to the control terminal of the transistor under test and is used to generate a bias voltage. The voltage detection module is connected to the detected terminal of the transistor under test and is used to generate a voltage to be detected under the bias voltage. The voltage to be detected serves as an indicator of the performance of the transistor under test. Therefore, the transistor detection circuit of this application can monitor in real time whether the transistor is aging and the degree of aging, thereby enabling early prediction when the transistor's performance is severely degraded, and avoiding potential risks to the chip during long-term operation.

[0011] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0012] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application, and do not constitute an undue limitation of this application.

[0013] Figure 1 This is a schematic diagram of a transistor detection circuit according to an embodiment of this application;

[0014] Figure 2 This is a schematic diagram of a chip according to one embodiment of this application;

[0015] Figure 3 This is a layout diagram of the transistor detection circuit inside the chip according to an embodiment of this application;

[0016] Figure 4 This is a schematic diagram of the structure of an electronic device according to an embodiment of this application. Detailed Implementation

[0017] To enable those skilled in the art to better understand the technical solutions of this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings.

[0018] It should be noted that the terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0019] The following description, with reference to the accompanying drawings, describes a transistor detection circuit, chip, and electronic device according to embodiments of this application.

[0020] Figure 1 This is a schematic diagram of a transistor detection circuit according to an embodiment of this application.

[0021] like Figure 1 As shown, the transistor detection circuit 100 of this application embodiment includes: a voltage generation module 110 and a voltage detection module 120.

[0022] The voltage generation module 110 is connected to the control terminal of the transistor Q under test and is used to generate a bias voltage Vbias. The voltage detection module 120 is connected to the detected terminal of the transistor Q under test and is used to generate a detection voltage Vout under the action of the bias voltage Vbias; wherein, the detection voltage Vout serves as an indicator for evaluating the performance of the transistor Q under test.

[0023] In this embodiment, the bias voltage Vbias generated by the voltage generation module 110 is applied to the control terminal (e.g., gate) of the transistor Q under test to drive the transistor Q. The transistor Q under test converts the bias voltage Vbias into an output current I based on its transconductance gm. This current I flows into the load resistor R2, thereby obtaining the output voltage U, U = I * R2. Then, the voltage detection module 120 converts the output voltage U into a digital signal, namely the voltage under test Vout, and provides it to the system for further analysis. Since the relationship between the output current I, the bias voltage Vbias, and the transconductance gm is I = Vbias * gm, when the transistor Q under test ages, the transconductance gm of the transistor Q under test will decrease, and the output voltage Vout of the detection circuit will also be affected and decrease. Thus, based on the value of the voltage under test Vout after analog-to-digital conversion, it is possible to accurately determine whether the transistor Q under test is aging and the degree of aging of the transistor Q under test.

[0024] Assume that the initial transconductance gm of the transistor Q under test is measured to be 1mA / V and the output voltage Vout is 10V.

[0025] As time progresses, if the transconductance gm of the transistor Q under test drops to 0.8 mA / V at time T1, the output voltage Vout will drop to 8V. This indicates that the transistor Q under test is aging, but the aging is not severe. If the transconductance gm of the transistor Q under test drops to 0.5 mA / V at time T2, the output voltage Vout will drop to 5V. This indicates that the transistor Q under test is aging, and the aging is more severe.

[0026] Therefore, the voltage under test Vout can be used as a key indicator to measure the performance of the transistor Q under test, enabling the transistor detection circuit 100 of this application to monitor in real time whether the transistor Q under test is aging and the degree of aging of the transistor Q under test, thereby making a prediction in advance before the performance of the transistor Q under test is severely degraded, and avoiding potential risks to the chip during long-term operation.

[0027] like Figure 1 As shown, the voltage generation module 110 includes a current source Is and a resistive element R1.

[0028] One end of the current source Is is connected to the power supply terminal Vcc, and the other end of the current source Is is connected to one end of the resistor element R1 and the control terminal of the transistor Q to be tested. The other end of the resistor element R1 is connected to the ground terminal GND.

[0029] For example, the current source Is is a constant current source, which can ensure that the current flowing through the resistive element R1 and the transistor Q under test remains constant regardless of how the load resistance R2 changes, which helps to maintain the stability of the bias voltage Vbias.

[0030] The resistor R1 is a variable resistor. By adjusting the resistance value of the variable resistor, the bias voltage Vbias applied to the control terminal of the transistor Q under test can be precisely controlled, thereby adapting to different test requirements and conditions.

[0031] like Figure 1 As shown, the voltage detection module 120 includes: an analog-to-digital converter unit 121; wherein, the analog-to-digital converter unit 121 is used to convert the analog voltage (i.e., the output voltage U) output by the detected terminal of the transistor Q into a digital form of the detected voltage Vout.

[0032] like Figure 1 As shown, the voltage detection module 120 further includes a switch K; wherein the switch K is disposed between the detected terminal of the transistor Q to be detected and the input terminal of the analog-to-digital converter unit 121, and is used to selectively connect or disconnect the electrical connection between the detected terminal of the transistor Q to be detected and the input terminal of the analog-to-digital converter unit 121.

[0033] In the embodiments of this application, when the transistor Q to be detected is a field-effect transistor, the detected terminal is the drain; or, when the transistor Q to be detected is a bipolar transistor, the detected terminal is the emitter.

[0034] In summary, the transistor detection circuit of this application includes a voltage generation module and a voltage detection module. The voltage generation module is connected to the control terminal of the transistor under test and is used to generate a bias voltage. The voltage detection module is connected to the detected terminal of the transistor under test and is used to generate a voltage to be detected under the bias voltage. The voltage to be detected serves as an indicator of the performance of the transistor under test. Therefore, the transistor detection circuit of this application can monitor in real time whether the transistor is aging and the degree of aging, thereby enabling early prediction when the transistor's performance is severely degraded, and avoiding potential risks to the chip during long-term operation.

[0035] Based on the above embodiments, this application also proposes a chip.

[0036] Figure 2 This is a schematic diagram of a chip according to one embodiment of this application.

[0037] like Figure 2 As shown, the chip in this embodiment of the application includes: Figure 1 The transistor detection circuit 100 shown.

[0038] In order to fully test all the different types of transistors used in the current chip, the chip design includes multiple transistor arrays, each of which includes a voltage detection unit, multiple voltage generation modules, and multiple transistors to be tested.

[0039] The voltage detection module selectively connects to the detection terminal of each transistor under test via a switch positioned between the detection terminal of each transistor and the input terminal of the analog-to-digital converter (ADC) unit, thereby acquiring the detection voltage generated by the corresponding transistor. In other words, by controlling the state of the switch, the output voltage of a specific transistor under test can be selectively connected to the ADC unit 121 for measurement. This allows the system to sequentially and accurately measure the voltage of each transistor under test, convert the analog voltage signal into a digital signal, and determine whether the transistor is aging and the degree of aging based on the digital signal.

[0040] Figure 3 This is a layout diagram of the transistor detection circuit within a chip according to one embodiment of this application. Since most chips requiring monitoring have a large area, the reliability performance of devices in different regions is inconsistent. For example, temperature distribution, stress conditions, and process uniformity may differ between the chip edges and center, all of which affect device performance and lifespan. Therefore, to comprehensively assess the reliability of the entire chip, detection points need to be deployed at multiple locations throughout the chip. For example, as... Figure 3 As shown, the detection points are arranged diagonally. This layout strategy not only covers the main area of ​​the chip, but also effectively captures the changing trend from the center to the edge. By arranging the points diagonally, the monitoring blind spots can be minimized, ensuring the comprehensiveness and representativeness of the data.

[0041] Suppose that in a large integrated circuit chip, the following is used: Figure 3 The method of arranging detection points diagonally is shown below:

[0042] Detection point A (near the center of the chip): The measured initial transconductance gm is 1mA / V, and the output voltage Vout is 10V.

[0043] Detection point B (near the chip edge): Due to the higher temperature and stress in the edge area, the measured initial transconductance gm may be slightly lower, at 0.9 mA / V, and the output voltage Vout is 9V.

[0044] Over time, if the transconductance gm at detection point A drops to 0.8 mA / V, the output voltage Vout drops to 8V, while at detection point B, the transconductance gm drops to 0.7 mA / V, and the output voltage Vout drops to 7V. This indicates that the aging rate is faster in the chip's edge regions. By comparing these data, the aging differences in different areas of the chip can be clearly identified, and corresponding measures can be taken to extend the chip's lifespan.

[0045] It should be noted that for details not disclosed in the chip of this application embodiment, please refer to the details disclosed in the transistor detection circuit of this application, which will not be repeated here.

[0046] The chip in this application embodiment, by using the transistor detection circuit described above, can monitor in real time whether the transistors in the chip are aging and the degree of aging, thereby making a prediction in advance when the performance of the transistors in the chip is severely degraded, and avoiding potential risks to the chip during long-term operation.

[0047] Based on the above embodiments, this application also proposes an electronic device that includes the aforementioned chip.

[0048] Figure 4 This is a schematic diagram of the structure of an electronic device according to one embodiment of this application. In the embodiments of this application, the electronic device 700 may be a vehicle, mobile phone, computer, digital broadcasting terminal, messaging device, game console, tablet device, medical device, fitness equipment, personal digital assistant, etc.

[0049] Reference Figure 4 The electronic device 700 may include one or more of the following components: a processing component 702, a memory 704, a power component 706, a multimedia component 708, an audio component 710, an input / output (I / O) interface 712, a sensor component 714, and a communication component 716. At least one of the processing component 702, the power component 706, the multimedia component 708, the audio component 710, the sensor component 714, and the communication component 716 is provided with a chip including a detection circuit of transistors.

[0050] Processing component 702 typically controls the overall operation of electronic device 700, such as operations associated with display, telephone calls, data communication, camera operation, and recording operations. Processing component 702 may include one or more processors 720 to execute instructions to complete all or part of the steps of the methods described above. Furthermore, processing component 702 may include one or more modules to facilitate interaction between processing component 702 and other components. For example, processing component 702 may include a multimedia module to facilitate interaction between multimedia component 708 and processing component 702.

[0051] Memory 704 is configured to store various types of data to support the operation of electronic device 700. Examples of such data include instructions for any application or method operating on electronic device 700, contact data, phonebook data, messages, pictures, videos, etc. Memory 704 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk.

[0052] Power component 706 provides power to various components of electronic device 700. Power component 706 may include a power management system, one or more power supplies, and other components associated with generating, managing, and distributing power to electronic device 700.

[0053] Multimedia component 708 includes a screen that provides an output interface between the electronic device 700 and the user. In some embodiments, the screen may include a liquid crystal display (LCD) and a touch panel (TP). If the screen includes a touch panel, the screen may be implemented as a touchscreen to receive input signals from the user. The touch panel includes one or more touch sensors to sense touches, swipes, and gestures on the touch panel. The touch sensors may sense not only the boundaries of the touch or swipe action but also the duration and pressure associated with the touch or swipe operation. In some embodiments, multimedia component 708 includes a front-facing camera and / or a rear-facing camera. When the electronic device 700 is in an operating mode, such as a shooting mode or a video mode, the front-facing camera and / or the rear-facing camera may receive external multimedia data. Each front-facing camera and rear-facing camera may be a fixed optical lens system or have focal length and optical zoom capabilities.

[0054] Audio component 710 is configured to output and / or input audio signals. For example, audio component 710 includes a microphone (MIC) configured to receive external audio signals when electronic device 700 is in an operating mode, such as call mode, recording mode, and voice recognition mode. The received audio signals may be further stored in memory 704 or transmitted via communication component 716. In some embodiments, audio component 710 also includes a speaker for outputting audio signals.

[0055] I / O interface 712 provides an interface between processing component 702 and peripheral interface modules, such as keyboards, click wheels, buttons, etc. These buttons may include, but are not limited to, home buttons, volume buttons, power buttons, and lock buttons.

[0056] Sensor assembly 714 includes one or more sensors for providing state assessments of various aspects of electronic device 700. For example, sensor assembly 714 can detect the on / off state of electronic device 700, the relative positioning of components such as the display and keypad of electronic device 700, changes in position of electronic device 700 or a component of electronic device 700, the presence or absence of user contact with electronic device 700, orientation or acceleration / deceleration of electronic device 700, and temperature changes of electronic device 700. Sensor assembly 714 may include a proximity sensor configured to detect the presence of nearby objects without any physical contact. Sensor assembly 714 may also include a light sensor, such as a CMOS or CCD image sensor, for use in imaging applications. In some embodiments, sensor assembly 714 may also include an accelerometer, gyroscope, magnetometer, pressure sensor, or temperature sensor.

[0057] Communication component 716 is configured to facilitate wired or wireless communication between electronic device 700 and other devices. Electronic device 700 can access wireless networks based on communication standards, such as WiFi, 4G, or combinations thereof. In one exemplary embodiment, communication component 716 receives broadcast signals or broadcast-related information from an external broadcast management system via a broadcast channel. In one exemplary embodiment, communication component 716 also includes a near-field communication (NFC) module to facilitate short-range communication. For example, the NFC module may be implemented based on radio frequency identification (RFID) technology, Infrared Data Association (IrDA) technology, ultra-wideband (UWB) technology, Bluetooth (BT) technology, and other technologies.

[0058] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0059] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0060] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the utility models disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the appended claims.

[0061] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A transistor detection circuit, characterized in that, include: A voltage generation module, which is connected to the control terminal of the transistor under test, is used to generate a bias voltage; A voltage detection module is connected to the detection terminal of the transistor under test and is used to generate a detection voltage under the bias voltage; wherein the detection voltage is used as an indicator to measure the performance of the transistor under test.

2. The transistor detection circuit according to claim 1, characterized in that, The voltage generation module includes: a current source and a resistive element; wherein, One end of the current source is connected to the power supply terminal, and the other end of the current source is connected to one end of the resistor element and the control terminal of the transistor to be tested, respectively. The other end of the resistor element is connected to the ground terminal.

3. The transistor detection circuit according to claim 2, characterized in that, The current source is a constant current source; The resistive element is a variable resistive element, used to adjust the magnitude of the bias voltage.

4. The transistor detection circuit according to claim 1, characterized in that, The voltage detection module includes: An analog-to-digital converter is used to convert the analog voltage output from the detected terminal of the transistor under test into a digital form of the detected voltage.

5. The transistor detection circuit according to claim 4, characterized in that, The voltage detection module further includes: A switch is disposed between the detected terminal of the transistor under test and the input terminal of the analog-to-digital converter unit, and is used to selectively connect or disconnect the electrical connection between the detected terminal of the transistor under test and the input terminal of the analog-to-digital converter unit.

6. The transistor detection circuit according to claim 1, characterized in that, in, The transistor to be tested is a field-effect transistor, and the terminal being tested is the drain; or... The transistor to be tested is a bipolar transistor, and the terminal being tested is the emitter.

7. A chip, characterized in that, include: The transistor detection circuit as described in any one of claims 1-6.

8. The chip as described in claim 7, characterized in that, The chip includes: Multiple transistor arrays, each of which includes a voltage detection unit, multiple voltage generation modules, and multiple transistors to be detected; The voltage detection module selectively connects to the detection terminal of the corresponding transistor by means of a switch disposed between the detection terminal of each transistor to be detected and the input terminal of the analog-to-digital conversion unit, so as to obtain the detection voltage generated by the corresponding transistor to be detected.

9. The chip as described in claim 8, characterized in that, The voltage detection units of the multiple transistor arrays are arranged diagonally on the chip surface.

10. An electronic device, characterized in that, include: The chip as described in any one of claims 7-9.

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