Triode array reliability test circuit
By designing a transistor array reliability test circuit, the problems of transistor aging power not meeting standards, difficulty in screening open and short circuits, as well as noise interference and crosstalk were solved. Constant power aging and efficient monitoring of transistors were achieved, improving DC aging efficiency and product stability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
- Filing Date
- 2025-06-14
- Publication Date
- 2026-06-12
AI Technical Summary
Existing technologies cannot determine whether the aging power of transistors meets the standard, cannot promptly screen out transistors with open circuits and short circuits, and when performing DC aging on multiple products (batch products) simultaneously using the same power supply and ground, there are problems such as large total DC aging current, external noise interference, and crosstalk between products causing power fluctuations.
A transistor array reliability test circuit was designed, including a base voltage reference circuit, a base/voltage source constant current bias circuit, a base reverse breakdown protection circuit, an emitter constant current bias circuit, an open circuit/poor contact display circuit, a short circuit display circuit, and an anti-interference protection circuit. Through the combination of these circuits, the constant power dissipation aging, open circuit/poor contact, and short circuit of the transistors can be monitored, and external noise interference and crosstalk between products can be prevented.
It enables transistors to age with constant power dissipation, can monitor open circuit, poor contact and short circuit conditions in a timely manner, improves DC aging efficiency, and prevents external noise interference and crosstalk between products, ensuring the power stability of the products.
Smart Images
Figure CN224354525U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of transistor testing technology, and more specifically to the field of transistor array testing technology. In particular, it relates to a transistor array reliability test circuit. Background Technology
[0002] Transistors contain two types of charge carriers with opposite polarities that participate in conduction, acting as current amplifiers and switches in circuits. An array of multiple independent transistors housed in the same metal-ceramic housing is called a transistor array (or simply a product). For example... Figure 1 The diagram shows a two-channel high-voltage transistor array encapsulated in a metal-ceramic housing. Each transistor is electrically connected to the external environment via six metal pins on the housing. DC aging is an important reliability test, and the DC aging test circuit for this product must be designed based on the characteristics of the transistor array.
[0003] When performing DC aging on a transistor array, such as Figure 2 As shown, existing testing technologies have the following shortcomings:
[0004] 1. The voltage difference V across the collector (C) and emitter (E) of a transistor CE and the current I flowing through the collector C The value is not constant, which means that the transistor cannot continuously dissipate power for DC aging.
[0005] 2. During DC aging of a transistor, the only way to detect it is to directly measure the voltage V across the collector (C) and emitter (E) terminals of the transistor. CE Difference and current I flowing through the collector C Only by checking the value can we determine whether the power of the transistor meets the requirements.
[0006] 3. Transistors with open or short circuits at both the collector (C) and emitter (E) terminals must be discarded. Open and short circuits are not easily identifiable, and failing to promptly screen out such transistors would waste resources and time during DC aging. To facilitate the extraction of the metal leads from the transistor casing, suitable product fixtures are required. The transistor is then connected to the DC aging test circuit via the fixture's leads. It is difficult to easily determine whether the transistor's collector (C) and emitter terminals are making poor contact with the DC aging test circuit. Poor contact will prevent the transistor from achieving the required power dissipation during DC aging, thus compromising the effectiveness of the DC aging process.
[0007] 4. The DC aging test circuit for each product is the same. The power supply and ground wire of the DC aging test circuit for each product are connected in parallel. Multiple products (batch products) can be DC aged simultaneously through the same power supply and ground. The total current is relatively large. No effective measures have been taken to prevent external noise interference and crosstalk between products, which leads to fluctuations in the power of the products.
[0008] In view of the above, this utility model is hereby proposed. Summary of the Invention
[0009] The technical problem to be solved by this utility model is: to solve the problems in the prior art such as the inability to determine whether the aging power of the transistor meets the standard, the inability to timely screen out open-circuit and short-circuit transistors, the large total DC aging current when performing DC aging on multiple products (batch products) at the same power supply and ground, and the power fluctuation of the product caused by external noise interference and crosstalk between products.
[0010] Therefore, the present invention provides a transistor array reliability test circuit, such as... Figure 3 As shown. Includes:
[0011] Transistor (NPN transistor), base voltage reference circuit, base / voltage source constant current bias circuit, base reverse breakdown protection circuit, emitter constant current bias circuit, open circuit / poor contact display circuit, short circuit display circuit, anti-interference protection circuit.
[0012] The base of the transistor is connected to the input terminal of the B-type reverse breakdown protection circuit, and the output terminal of the B-type reverse breakdown protection circuit is connected to the negative terminal of the B-type voltage reference circuit and the negative terminal of the B-type / voltage source constant current bias circuit. The emitter of the transistor is connected to the positive terminal of the E-type constant current bias circuit and the negative terminal of the short-circuit display circuit. The collector of the transistor is connected to the negative terminal of the open-circuit / poor contact display circuit. One end of the anti-interference protection circuit is connected to the positive terminal of the B-type / voltage source constant current bias circuit, the positive terminal of the open-circuit / poor contact display circuit, and the power supply VCC terminal. The other end of the anti-interference protection circuit is connected to the positive terminal of the B-type voltage reference circuit, the negative terminal of the E-type constant current bias circuit, the positive terminal of the short-circuit display circuit, and the power supply GND terminal.
[0013] The function of the B-terminal voltage reference circuit is to fix the B-terminal and E-terminal voltages of the transistor, and also to ensure that the E-terminal constant current bias circuit enters the constant current state.
[0014] The function of the constant current bias circuit at the emitter is to fix the current I flowing through the collector. C .
[0015] The function of the B-terminal / voltage source constant current bias circuit is to ensure that the current flowing through the B-terminal voltage reference circuit causes the B-terminal voltage reference circuit to enter the voltage regulation region, thereby fixing the B-terminal voltage.
[0016] The function of the anti-interference protection circuit is to prevent external noise interference and crosstalk between different products, which could cause fluctuations in the product's power.
[0017] The function of the open circuit / poor contact display circuit is to visually determine whether there is an open circuit between the collector and emitter terminals of the transistor or whether there is poor contact between the collector and emitter terminals and the test circuit based on whether it emits light.
[0018] The function of the short-circuit indicator circuit is to visually determine whether the collector (C) and emitter (E) terminals of the transistor are short-circuited based on its illumination, and to determine whether the collector and E terminals are not short-circuited based on its non-illumination. Regardless of whether the collector and E terminals of the transistor are short-circuited, there is always a path for current to flow through the open circuit / poor contact indicator circuit to ground, causing the open circuit / poor contact indicator circuit to illuminate; regardless of whether the collector and E terminals of the transistor are open-circuited or have poor contact, the voltage across the branch is relatively low, so the short-circuit indicator circuit does not illuminate.
[0019] The B-terminal reverse breakdown protection circuit is required to have the characteristics of low forward conduction voltage and high reverse breakdown voltage. On the one hand, it will not affect the normal DC aging of the transistor. On the other hand, it will prevent the transistor emitter junction from being directly reverse-broken when a short circuit occurs at the C and E terminals of the transistor.
[0020] This utility model has the following advantages:
[0021] 1. The transistor is subjected to a DC aging test with constant power dissipation.
[0022] 2. Monitoring of normal DC aging test status.
[0023] 3. Monitoring of open circuit / poor contact conditions.
[0024] 4. Short circuit status monitoring.
[0025] 5. The DC aging test is highly efficient. Batch products can undergo DC aging tests simultaneously, which can also prevent external noise interference and crosstalk between products, thus preventing power fluctuations in the products.
[0026] This invention can be widely applied to reliability testing techniques for transistors and transistor arrays. Attached Figure Description
[0027] Figure 1 This is a schematic diagram of a transistor array (dual-channel) circuit structure.
[0028] Figure 2 This is a schematic diagram of the existing reliability test circuit structure for transistor arrays.
[0029] Figure 3This is a schematic diagram of the principle block diagram (single channel) of the transistor array reliability test circuit of this utility model.
[0030] Figure 4 This is a schematic diagram of the dual-channel transistor array reliability test circuit of this utility model.
[0031] In the diagram: Q1 and Q2 are NPN transistors; CRD1, CRD2, CRD3, CRD4, CRD5, and CRD6 are constant current diodes; LED1 and LED2 are green light-emitting diodes; LED3 and LED4 are red light-emitting diodes; C1 and C2 are capacitors; Z1, Z2, Z3, and Z4 are Zener diodes; and D1 and D2 are diodes. Detailed Implementation
[0032] like Figure 1-4 As shown, taking a dual-channel NPN transistor array as an example, the specific implementation of the transistor array reliability test circuit is as follows:
[0033] The base voltage reference circuit is a Zener diode.
[0034] The B-pole / voltage source constant current bias circuit is a constant current transistor.
[0035] The B-terminal reverse breakdown protection circuit is a diode.
[0036] The E-pole constant current bias circuit is a constant current transistor.
[0037] The circuit breaker / poor contact indicator circuit is a green light-emitting diode.
[0038] The short-circuit display circuit is a series circuit of a Zener diode, a constant current diode, and a red light-emitting diode. The anode of the Zener diode is connected to the positive terminal of the constant current diode, and the negative terminal of the constant current diode is connected to the anode of the red light-emitting diode.
[0039] The anti-interference protection circuit is a capacitor.
[0040] The test circuit of the transistor array reliability test method is as follows: Figure 4 As shown. Includes:
[0041] Q1 and Q2 are NPN transistors; CRD1, CRD2, CRD3, CRD4, CRD5, and CRD6 are constant current transistors; LED1 and LED2 are green light-emitting diodes; LED3 and LED4 are red light-emitting diodes; C1 and C2 are capacitors; Z1, Z2, Z3, and Z4 are Zener diodes; and D1 and D2 are diodes.
[0042] The base voltage reference circuit for Q1 is Z1, and the base voltage reference circuit for Q2 is Z2.
[0043] The constant current bias circuit for the base / voltage source of Q1 is CRD1, and the constant current bias circuit for the base / voltage source of Q2 is CRD2.
[0044] The reverse breakdown protection circuit for the base plate of Q1 is D1, and the reverse breakdown protection circuit for the base plate of Q2 is D2.
[0045] The constant current bias circuit for the emitter of Q1 is CRD3, and the constant current bias circuit for the emitter of Q2 is CRD6.
[0046] The open circuit / poor contact display circuit of Q1 is LED1, and the open circuit / poor contact display circuit of Q2 is LED2.
[0047] The short-circuit display circuit of Q1 includes Z3, CRD4, and LED3, and the short-circuit display circuit of Q2 includes Z4, CRD5, and LED4.
[0048] The anti-interference protection circuit for Q1 is C1, and the anti-interference protection circuit for Q2 is C2.
[0049] The base of Q1 is connected to the cathode of D1, and the anode of D1 is connected to the cathode of Z1 and the negative terminal of CRD1. The emitter of Q1 is connected to the positive terminal of CRD3 and the cathode of Z3. The collector of Q1 is connected to the cathode of LED1. One end of C1 is connected to the positive terminal of CRD1, the anode of LED1, and the power supply VCC terminal. The other end of C1 is connected to the anode of Z1, the negative terminal of CRD3, the cathode of LED3, and the power supply GND terminal. The anode of Z3 is connected to the positive terminal of CRD4, and the negative terminal of CRD4 is connected to the anode of LED3.
[0050] The base of Q2 is connected to the cathode of D2, and the anode of D2 is connected to the cathode of Z2 and the negative terminal of CRD2. The emitter of Q2 is connected to the positive terminal of CRD6 and the cathode of Z4. The collector of Q2 is connected to the cathode of LED2. One end of C2 is connected to the positive terminal of CRD2, the anode of LED2, and the power supply VCC terminal. The other end of C2 is connected to the anode of Z2, the negative terminal of CRD6, the cathode of LED4, and the power supply GND terminal. The anode of Z4 is connected to the positive terminal of CRD5, and the negative terminal of CRD5 is connected to the anode of LED4.
[0051] like Figure 4 The working principle of the experimental circuit shown is qualitatively analyzed as follows:
[0052] To ensure the DC aging effect of the transistor, the transistor's power dissipation P must be stabilized. tot Nearby, according to the formula P=V CE ×I C Therefore, the voltage V across the collector and emitter of the transistor is fixed.CE and the current I flowing through the collector C value.
[0053] If DC aging is performed in the saturation region of the transistor, both the emitter junction and collector junction are forward biased. CE <V BE Therefore, V CE The value is approximately less than 0.7V, and the current flowing through the collector is... The value is greater than the maximum collector current I. CM The transistor cannot withstand such a large current, as it would damage the transistor. Therefore, DC aging is performed in the amplification region, i.e., at voltage V. CE The value is relatively large.
[0054] (1) Stabilizing the power circuit section of the product
[0055] The function of Zener diodes Z1 and Z2 is to fix the base (B) and emitter (E) voltages of the transistors, and also to ensure that the constant current transistors CRD3 and CRD6 enter the constant current region; the function of constant current transistors CRD3 and CRD6 is to fix the current I flowing through the emitter (E) terminal. E I E =I C +I B The base current I flows through B The current I flowing through the collector is very small and can be basically ignored, so the current I C It was also fixed. The voltage difference V across the collector and emitter of the transistor needs to be fixed. CE You can first fix the voltage at the emitter, and then adjust it according to V. E =V B -V BE V BE The voltage is approximately 0.7V. The emitter voltage can be fixed by the base voltage. The base voltage is fixed by connecting a Zener diode Z1 and Z2 in series with ground, thus fixing the base voltage as well. A voltage of V is then connected to the collector. CE +V E In the VCC power supply, the collector voltage of the transistor is fixed, and the voltage V across the collector and emitter of the transistor is... CE The difference will be fixed and the transistor will enter the amplification region. Now, the voltage across the transistor's base (B), collector (C), and emitter (E) and the voltage difference V across the collector (C) and emitter (E) are... CE All are already fixed, now fix I. C The current is According to I E =I C +I B The base current I flows through B Very small, practically negligible, a fixed current I flowing through the emitter. E C-terminal current I C Therefore, it is fixed. A voltage of V is connected in series between the emitter and the emitter.E The constant current transistors CRD3 and CRD6 enter the constant current region, and the current value of constant current transistors CRD3 and CRD6 when entering the constant current region is... I C The current is fixed at .
[0056] The function of constant current transistors CRD1 and CRD2 is to ensure that the current flowing through Zener diodes Z1 and Z2 is relatively large and constant, thereby allowing Zener diodes Z1 and Z2 to enter the voltage regulation region, and thus fixing the base voltage. Constant current transistors CRD1 and CRD2 are connected in series between the VCC power supply and the base, and the voltage across constant current transistors CRD1 and CRD2 is fixed at VCC-V. B Therefore, the constant current transistors CRD1 and CRD2 are selected with a voltage value of VCC-V across their terminals. B This allows for a larger and constant current to be supplied to Zener diodes Z1 and Z2. Constant current diodes CRD1 and CRD2 also supply current to the base (B). The forward current transfer ratio of the transistors is relatively large, I... C The current is fixed, I B The current is very small; most of the current from the constant current transistors CRD1 and CRD2 flows into the Zener diodes Z1 and Z2. The voltage across the constant current transistors CRD1 and CRD2 is VCC-V. B When the current flowing through Zener diodes Z1 and Z2 is equal to the constant current value of constant current diodes CRD1 and CRD2, they can enter the voltage regulation region, thus providing a constant voltage to constant current diodes CRD1 and CRD2.
[0057] The function of capacitors C1 and C2 is to prevent external noise interference and crosstalk between products, which could cause fluctuations in the product's power output. For example... Figure 4 As shown, this is a DC aging test circuit for a single product (dual channel). To improve DC aging efficiency, the same DC aging test circuit can be used to perform DC aging on a batch of products simultaneously. The power supply and ground lines of the DC aging test circuit for each product can be connected in parallel. However, performing DC aging with the same power supply and ground results in a relatively large total current. To prevent external noise interference and crosstalk between products, which could cause power fluctuations, a capacitor is connected in parallel between the power supply and ground of each transistor.
[0058] (2) Test status monitoring circuit section
[0059] The green LEDs LED1 and LED2 are used to visually determine whether there is an open circuit between the collector (C) and emitter (E) terminals of the transistor, or whether there is poor contact between the C and E terminals and the DC aging test circuit. The green LEDs LED1 and LED2 are connected in series with the collector (C) terminal of the transistor and then connected to the VCC power supply. The voltage of the VCC power supply is V... CE+V E In addition to the voltage values of green LEDs LED1 and LED2 when they are emitting light normally, the current I during normal DC aging of the transistors is also included. C To ensure that green LEDs LED1 and LED2 emit light normally, the voltage across their terminals and the current flowing through them are fixed when they are emitting light normally. Therefore, the green LEDs can emit light normally during the normal DC aging of the transistor. However, if the collector and emitter terminals are open-circuited or have poor contact, the current flowing through the green LEDs LED1 and LED2 will be zero, and the green LEDs LED1 and LED2 will not emit light.
[0060] The red LEDs LED3 and LED4 are used to visually indicate a short circuit between the collector (C) and emitter (E) terminals of a transistor, while their absence of light indicates no short circuit. A branch is formed by the red LEDs LED3 and LED4, the current collectors CRD4 and CRD5, and the Zener diodes Z3 and Z4. This branch is connected in parallel between the emitter (E) terminal and ground of the transistor. The voltage threshold of the Zener diodes Z3 and Z4 entering the regulation region is lower than the emitter voltage V during normal DC aging of the transistor. E The constant current transistors CRD4 and CRD5 are used to prevent excessive current flowing into this branch, protecting the Zener diode and the red LED. During normal DC aging of the transistors, the voltage across the branch is relatively low, and the current flowing through the branch is insufficient to make the red LED light up. When the collector and emitter terminals of the transistors are short-circuited, the voltage across the branch is relatively high, and the current flowing through the branch makes the red LEDs LED3 and LED4 light up.
[0061] Regardless of whether the collector and emitter terminals of the transistor are short-circuited, there is always a path for current to flow through the green LEDs to ground, and both green LEDs LED1 and LED2 light up; regardless of whether the collector and emitter terminals of the transistor are open-circuited or have poor contact, the voltage across the branch is relatively low, and neither red LEDs LED3 nor LED4 light up.
[0062] Diodes D1 and D2 have the characteristics of low forward voltage and high reverse breakdown voltage, thus serving two purposes: ① Their low forward voltage prevents interference with the normal DC aging of the transistor; ② Their high reverse breakdown voltage prevents direct reverse breakdown of the transistor's collector junction when a short circuit occurs between the collector and emitter terminals, thus preventing a disruption of the transistor's current I. C Most of the current flows from the Zener diodes Z1 and Z2 to ground, resulting in a relatively small voltage across the branch formed by the red LEDs LED3 and LED4, the constant current diodes CRD4 and CRD5, and the Zener diodes Z3 and Z4. The current flowing through the branch is insufficient to make the red LEDs light up, so the red LEDs do not light up. Therefore, it is impossible to determine that there is a short circuit between the collector and emitter of the transistor by the fact that the red LEDs do not light up.
[0063] The test circuit has the following advantages:
[0064] (1) The transistor undergoes DC aging with constant power dissipation. The Zener diode provides a constant voltage to the constant current diode to bring it into the constant current region, while the constant current diode provides a constant voltage to the Zener diode to bring it into the voltage regulation region. Therefore, the voltage difference V between the collector and emitter terminals of the transistor is V. CE and the current I flowing through the collector C The value is constant.
[0065] (2) Normal DC aging indication function: In the DC aging test circuit of a transistor, when the green LED lights up and the red LED does not light up, it indicates that the transistor is undergoing normal DC aging.
[0066] (3) Open circuit / poor contact indication function: In the DC aging test circuit of a transistor, when the green LED does not light up and the red LED does not light up, it indicates that the C and E terminals of the transistor are open circuit or the C and E terminals are in poor contact with the DC aging test circuit. This reminds the operator to check in time, screen out the products with open C and E terminals, or adjust the electrical connection between the C and E terminals of the transistor and the DC aging test circuit.
[0067] (4) Short circuit indication function: When the green LED lights up and the red LED also lights up, it indicates that the product is abnormal. It usually manifests as a short circuit at the C and E terminals, reminding the operator to check in time and screen out and eliminate products with short circuits at the C and E terminals.
[0068] (5) High DC aging efficiency: When batch products are subjected to DC aging at the same time, external noise interference and crosstalk between products can be prevented, which can cause fluctuations in product power.
[0069] The truth table of the test circuit states in the above embodiments is shown in Table 2.
[0070] Table 2 Truth Table of Reliability Test Circuit State in Example 2
[0071]
[0072] like Figure 4 The working principle of the experimental circuit shown is quantitatively analyzed as follows:
[0073] based on Figure 4 The three operating states of the DC aging test circuit for transistor arrays were analyzed for a single product with a dual-channel transistor array to determine the feasibility and reliability of the circuit design.
[0074] 1. When the transistor array that has been DC aged is working normally
[0075] When a single-channel DC aging test circuit is working properly, the I of this channel... 总 =13.6mA, VCC=22.5V, voltage difference V across the collector and emitter of the transistor. CE =15V and current I flowing through the collector. C =8mA, the transistor's power is stable at the dissipation power P tot Nearby, the current flowing through the green LED is 8mA, so it lights up; the current flowing through the red LED is zero, so it does not light up.
[0076] 2. When the collector and emitter terminals of a transistor array that has been subjected to DC aging are open-circuited or have poor contact.
[0077] Because each channel in the transistor array is independent and does not affect the others, when the collector (C) and emitter (E) terminals of a transistor in a single channel are open-circuited or have poor contact, I current will flow through the collector (C) terminal of that channel. C =0mA, the current flowing through the green LED is also zero, so it does not light up; the current flowing through the red LED is also zero, so it does not light up.
[0078] If the DC aging test circuit of the other channel works normally, then it is consistent with the situation described in case 1 above.
[0079] 3. When the collector and emitter terminals of a transistor array that has been DC aged are short-circuited.
[0080] Since each channel of the transistor array is independent and does not affect the others, when the collector and emitter terminals of a transistor in a single channel are short-circuited, the voltage difference V between the collector and emitter terminals of that channel's transistor will be... CE =0V, the voltage across the branch formed by the red LED, constant current diode and Zener diode is relatively large, the current flowing through the red LED is 1mA, and it lights up; the current flowing through the green LED is 9mA, and it lights up.
[0081] If the DC aging test circuit of the other channel works normally, then it is consistent with the situation described in case 1 above.
[0082] In the test circuit, the NPN transistor can be replaced with a PNP transistor, and the polarity of the relevant circuits in the test circuit is changed accordingly.
[0083] In the test circuit, the NPN transistor can be replaced with a MOSFET or an IGBT, and the polarity of the relevant circuits in the test circuit is changed accordingly.
[0084] Finally, it should be noted that the above embodiments are merely examples for clear illustration. This utility model includes, but is not limited to, the above embodiments, and it is neither necessary nor possible to exhaustively describe all implementation methods. Those skilled in the art can make other variations or modifications based on the above description. All implementation schemes that meet the requirements of this utility model are within the protection scope of this utility model.
Claims
1. A transistor array reliability test circuit, characterized in that: Includes NPN transistor, base voltage reference circuit, base / voltage source constant current bias circuit, base reverse breakdown protection circuit, emitter constant current bias circuit, open circuit / poor contact display circuit, short circuit display circuit, and anti-interference protection circuit. The base of the transistor is connected to the input terminal of the B-type reverse breakdown protection circuit, and the output terminal of the B-type reverse breakdown protection circuit is connected to the negative terminal of the B-type voltage reference circuit and the negative terminal of the B-type / voltage source constant current bias circuit. The emitter of the transistor is connected to the positive terminal of the E-type constant current bias circuit and the negative terminal of the short-circuit display circuit. The collector of the transistor is connected to the negative terminal of the open-circuit / poor contact display circuit. One end of the anti-interference protection circuit is connected to the positive terminal of the B-type / voltage source constant current bias circuit, the positive terminal of the open-circuit / poor contact display circuit, and the power supply VCC terminal. The other end of the anti-interference protection circuit is connected to the positive terminal of the B-type voltage reference circuit, the negative terminal of the E-type constant current bias circuit, the positive terminal of the short-circuit display circuit, and the power supply GND terminal.
2. The transistor array reliability test circuit as described in claim 1, characterized in that: Each channel of the transistor array is independent of the others.
3. The transistor array reliability test circuit as described in claim 1, characterized in that: The base voltage reference circuit is a Zener diode, the base / voltage source constant current bias circuit is a constant current diode, and the base reverse breakdown protection circuit is a diode.
4. The transistor array reliability test circuit as described in claim 1, characterized in that: The E-pole constant current bias circuit is a constant current transistor.
5. The transistor array reliability test circuit as described in claim 1, characterized in that: The circuit breaker / poor contact indicator circuit is a green light-emitting diode.
6. The transistor array reliability test circuit as described in claim 1, characterized in that: The short-circuit display circuit is a series circuit of a Zener diode, a constant current diode, and a red light-emitting diode. The anode of the Zener diode is connected to the positive terminal of the constant current diode, and the negative terminal of the constant current diode is connected to the anode of the red light-emitting diode.
7. The transistor array reliability test circuit as described in claim 1, characterized in that: The anti-interference protection circuit is a capacitor.
8. The transistor array reliability test circuit as described in claim 1, characterized in that: Includes NPN transistors Q1 and Q2, constant current transistors CRD1, CRD2, CRD3, CRD4, CRD5, and CRD6, green LEDs LED1 and LED2, red LEDs LED3 and LED4, capacitors C1 and C2, Zener diodes Z1, Z2, Z3, and Z4, and diodes D1 and D2. The base of Q1 is connected to the cathode of D1, and the anode of D1 is connected to the cathode of Z1 and the negative terminal of CRD1; the emitter of Q1 is connected to the positive terminal of CRD3 and the cathode of Z3; the collector of Q1 is connected to the cathode of LED1; one end of C1 is connected to the positive terminal of CRD1, the anode of LED1, and the power supply VCC terminal, and the other end of C1 is connected to the anode of Z1, the negative terminal of CRD3, the cathode of LED3, and the power supply GND terminal; the anode of Z3 is connected to the positive terminal of CRD4, and the negative terminal of CRD4 is connected to the anode of LED3. The base of Q2 is connected to the cathode of D2, and the anode of D2 is connected to the cathode of Z2 and the negative terminal of CRD2. The emitter of Q2 is connected to the positive terminal of CRD6 and the cathode of Z4. The collector of Q2 is connected to the cathode of LED2. One end of C2 is connected to the positive terminal of CRD2, the anode of LED2, and the power supply VCC terminal. The other end of C2 is connected to the anode of Z2, the negative terminal of CRD6, the cathode of LED4, and the power supply GND terminal. The anode of Z4 is connected to the positive terminal of CRD5, and the negative terminal of CRD5 is connected to the anode of LED4.
9. The transistor array reliability test circuit as described in claim 1, characterized in that: The NPN transistor is replaced with a PNP transistor, and the polarity of the relevant circuits in the test circuit is changed accordingly.
10. A transistor array reliability test circuit as described in claim 1, characterized in that: The NPN transistor is replaced with a MOSFET or an IGBT, and the polarity of the relevant circuits in the test circuit is changed accordingly.