A target backing plate and sputter target assembly

Abstract

The utility model provides a target material backboard and sputtering target material subassembly, the target material backboard includes the welding surface and the cooling surface, is set with first recess on the cooling surface, is provided with second recess on the groove bottom surface of first recess, second recess is deepened from the cooling surface to the welding surface direction in first recess, forms at least 3 annular water channels of the concentric arrangement, the utility model provides a target material backboard, sets up first recess in the cooling surface of backboard, and further deepens and sets up annular water channel in first recess, greatly promotes the contact area of backplate and cooling water, improves the cooling effect, reduces the deformation after long time sputtering use, simultaneously, increases the spacing of backplate center and magnet component, so that even if the backplate appears the deformation situation after long time sputtering use, also can not scrape and interfere with magnet component.

Description

Technical Field

[0001] This utility model belongs to the field of magnetron sputtering technology, specifically relating to a target backplate and a sputtering target assembly. Background Technology

[0002] Magnetron sputtering is one of the core technologies of physical vapor deposition (PVD). Its process principle involves electrons, under the influence of an electric field, colliding with argon atoms as they fly towards the substrate, ionizing them to produce argon ions and new electrons. The new electrons fly towards the substrate, while the argon ions, accelerated by the electric field, fly towards the cathode target and bombard the target surface with high energy, causing the target material to sputter. The process stability of magnetron sputtering directly affects the performance of thin-film devices. As the source material for high-energy particle bombardment, the structural integrity of the sputtering target has a decisive influence on the sputtering process.

[0003] The target backplate, as a key support component, performs three core functions: first, it achieves precise positioning of the target within the sputtering cavity through mechanical connection; second, it acts as a heat transfer medium, effectively conducting the localized high temperature (up to 500-800℃) on the target surface to the circulating cooling system; and third, it acts as a current carrier, maintaining a stable plasma discharge environment. To achieve efficient thermal management, the backplate typically integrates a water channel structure, controlling the operating temperature through forced water cooling. This results in a significant temperature difference between the target backplate surface and the back side, and this extreme temperature gradient can cause thermal expansion mismatch in the material. As the sputtering process continues, the deformation increases, causing the distance between the backplate and the underlying magnet assembly to gradually decrease. Ultimately, this leads to scratching interference between the backplate and the magnetic poles, which not only causes magnet demagnetization but may also generate metal debris that contaminates the coating cavity.

[0004] CN218203025U discloses a target assembly for high-power magnetron sputtering, in which a trapezoidal groove with a certain inclination is formed on the cooling surface of the backplate to enhance the cooling effect and prevent cracking of the target sputtering surface. CN211689221U discloses a backplate and target with internal water channels, in which two rings of water channel grooves are formed on the bottom plate of the target backplate, around the center of the bottom plate and folded and extended to form water channels, reducing the high temperature generated during sputtering. However, the cooling effect of the existing design on the backplate is limited. When the target heat continues to accumulate, the deformation is too large, and it is still impossible to prevent the problem of scratching interference between the backplate and the magnetic pole.

[0005] Therefore, based on the existing problems, it is urgent to optimize the structure of the target backplate. Utility Model Content

[0006] The purpose of this invention is to provide a target backplate and a sputtering target assembly. By designing a groove on the target cooling surface, the cooling effect of the target is improved, and the problem of interference between the backplate and the magnetic poles is prevented.

[0007] To achieve the objective of this utility model, the following technical solution is adopted:

[0008] In a first aspect, the present invention provides a target backing plate, the target backing plate including a welding surface and a cooling surface, wherein a first groove is formed on the cooling surface;

[0009] A second groove is provided on the bottom surface of the first groove;

[0010] The second groove deepens in the first groove from the cooling surface to the welding surface, forming at least three concentric annular water channels.

[0011] The target backplate provided by this utility model has a first groove on the cooling surface of the backplate, and an annular water channel is further deepened in the first groove, which greatly increases the contact area between the backplate and the cooling water, improves the cooling effect, and reduces the deformation of the backplate after long-term sputtering use. At the same time, the distance between the center of the backplate and the magnet assembly is increased, so that even if the backplate deforms after long-term sputtering use, it will not scratch or interfere with the magnet assembly.

[0012] Preferably, the ratio of the diameter of the first groove to the diameter of the target back plate is (0.6-0.8):1, for example, it can be 0.6:1, 0.65:1, 0.7:1, 0.75:1 or 0.8:1, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0013] Preferably, the ratio of the depth of the first groove to the thickness of the target backing plate is (0.2-0.5):1, for example, it can be 0.2:1, 0.25:1, 0.3:1, 0.35:1, 0.4:1, 0.45:1 or 0.5:1, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0014] Preferably, the cross-section of the first groove along the axial direction of the target back plate is square.

[0015] Preferably, the ratio of the outermost diameter of the second groove to the diameter of the target back plate is (0.6-0.8):1, for example, it can be 0.6:1, 0.65:1, 0.7:1, 0.75:1 or 0.8:1, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0016] Preferably, the width of the annular waterway is 4-8mm, for example, it can be 4mm, 5mm, 6mm, 7mm or 8mm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0017] Preferably, the spacing between adjacent annular water channels is 6-20mm, for example, it can be 6mm, 8mm, 10mm, 12mm, 14mm, 15mm, 16mm, 18mm or 20mm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0018] Preferably, the number of annular waterways is 5-20, for example, 5, 6, 8, 10, 12, 14, 15, 16, 18 or 20, but not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0019] Preferably, the ratio of the depth of the annular water channel to the thickness of the target back plate is (0.2-0.5):1, for example, it can be 0.2:1, 0.25:1, 0.3:1, 0.35:1, 0.4:1, 0.45:1 or 0.5:1, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0020] Preferably, the bottom surface of the annular waterway is a plane.

[0021] Preferably, the diameter of the target backplate is 300-500mm, for example, it can be 300mm, 350mm, 400mm, 450mm or 500mm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0022] Preferably, the thickness of the target backplate is 10-15mm, for example, it can be 10mm, 11mm, 12mm, 13mm, 14mm or 15mm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0023] In a second aspect, the present invention provides a sputtering target assembly, the sputtering target assembly comprising a sputtering target and the target backplate described in the first aspect;

[0024] The back side of the sputtering target is connected to the welding surface of the target back plate.

[0025] Preferably, the welding surface of the sputtering target is set as a bevel along the edge of the outer periphery of the sputtering target.

[0026] Compared with the prior art, the present invention has the following beneficial effects:

[0027] The target backplate provided by this utility model has a first groove on the cooling surface of the backplate, and an annular water channel is further deepened in the first groove, which greatly increases the contact area between the backplate and the cooling water, improves the cooling effect, and reduces the deformation of the backplate after long-term sputtering use. At the same time, the distance between the center of the backplate and the magnet assembly is increased, so that even if the backplate deforms after long-term sputtering use, it will not scratch or interfere with the magnet assembly. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the sputtering target assembly provided in Example 1;

[0029] Figure 2 A schematic diagram of the target backplate cooling surface of the sputtering target assembly provided in Example 1;

[0030] Figure 3 A schematic diagram of the sputtering target assembly provided for Comparative Example 1;

[0031] Wherein, 1 is the sputtering target; 2 is the target backing plate; 21 is the first groove; and 22 is the second groove. Detailed Implementation

[0032] It should be understood that in the description of this utility model, the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", and "outer" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0033] It should be noted that, in the description of this utility model, unless otherwise explicitly specified and limited, the terms "set," "connected," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0034] The technical solution of this utility model will be further described below with reference to the accompanying drawings and specific embodiments.

[0035] Example 1

[0036] This embodiment provides a method such as Figure 1 and 2 The sputtering target assembly shown.

[0037] The sputtering target assembly includes a sputtering target 1 and a target backplate 2.

[0038] The target backplate 2 has a diameter of 400 mm and a thickness of 14 mm.

[0039] The target backplate 2 includes a welding surface and a cooling surface, and a first groove 21 is formed on the cooling surface.

[0040] A second groove 22 is provided on the bottom surface of the first groove 21.

[0041] The ratio of the diameter of the first groove 21 to the diameter of the target back plate 2 is 0.8:1, and the diameter of the first groove 21 is 320mm.

[0042] The ratio of the depth of the first groove 21 to the thickness of the target backing plate 2 is 0.36:1, and the depth of the first groove 21 is 5mm.

[0043] The first groove 21 has a square cross-section along the axial direction of the target back plate 2.

[0044] The second groove 22 deepens in the first groove 21 from the cooling surface to the welding surface, forming nine concentric annular water channels.

[0045] The ratio of the outermost diameter of the second groove 22 to the diameter of the target back plate 2 is 0.8:1, and the outermost diameter of the second groove 22 is 320mm.

[0046] The width of the annular waterway is 6 mm, and the distance between adjacent annular waterways is 12 mm.

[0047] The ratio of the depth of the annular water channel to the thickness of the target back plate 2 is 0.36:1, and the depth of the annular water channel is 5mm.

[0048] The bottom surface of the annular waterway is a plane.

[0049] The sputtering target 1 includes a sputtering surface and a back surface.

[0050] The back side of the sputtering target 1 is connected to the welding surface of the target back plate 2.

[0051] The sputtering surface of the sputtering target 1 is set as an inclined surface along the outer edge of the sputtering target.

[0052] In this embodiment, the target assembly has a first groove on the cooling surface of the back plate, and an annular water channel is further deepened in the first groove. This greatly increases the contact area between the back plate and the cooling water, improving the cooling effect. After long-term sputtering use, the deformation of the back plate is not obvious. At the same time, the distance between the center of the back plate and the magnet assembly in the sputtering equipment is increased, so the back plate will not scratch or interfere with the magnet assembly.

[0053] Example 2

[0054] This embodiment provides a sputtering target assembly.

[0055] The sputtering target assembly includes a sputtering target 1 and a target backplate 2.

[0056] The target backplate 2 has a diameter of 400 mm and a thickness of 14 mm.

[0057] The target backplate 2 includes a welding surface and a cooling surface, and a first groove 21 is formed on the cooling surface.

[0058] A second groove 22 is provided on the bottom surface of the first groove 21.

[0059] The ratio of the diameter of the first groove 21 to the diameter of the target back plate 2 is 0.7:1, and the diameter of the first groove 21 is 280mm.

[0060] The ratio of the depth of the first groove 21 to the thickness of the target back plate 2 is 0.5:1, and the depth of the first groove 21 is 7mm.

[0061] The first groove 21 has a square cross-section along the axial direction of the target back plate 2.

[0062] The second groove 22 deepens in the first groove 21 from the cooling surface to the welding surface, forming 14 concentric annular water channels.

[0063] The ratio of the outermost diameter of the second groove 22 to the diameter of the target back plate 2 is 0.7:1, and the outermost diameter of the second groove 22 is 280mm.

[0064] The width of the annular waterway is 4 mm, and the distance between adjacent annular waterways is 6 mm.

[0065] The ratio of the depth of the annular water channel to the thickness of the target back plate 2 is 0.21:1, and the depth of the annular water channel is 3mm.

[0066] The bottom surface of the annular waterway is a plane.

[0067] The sputtering target 1 includes a sputtering surface and a back surface.

[0068] The back side of the sputtering target 1 is connected to the welding surface of the target back plate 2.

[0069] The sputtering surface of the sputtering target 1 is set as an inclined surface along the outer edge of the sputtering target.

[0070] This embodiment greatly increases the contact area between the backplate and the cooling water by creating a first groove on the cooling surface of the backplate and further deepening the annular water channel in the first groove, thereby improving the cooling effect. After long-term sputtering use, the deformation of the backplate is not obvious. At the same time, it increases the distance between the center of the backplate and the magnet assembly in the sputtering equipment, so that the backplate will not scratch or interfere with the magnet assembly.

[0071] Example 3

[0072] This embodiment provides a sputtering target assembly.

[0073] The sputtering target assembly includes a sputtering target 1 and a target backplate 2.

[0074] The target backplate 2 has a diameter of 400 mm and a thickness of 14 mm.

[0075] The target backplate 2 includes a welding surface and a cooling surface, and a first groove 21 is formed on the cooling surface.

[0076] A second groove 22 is provided on the bottom surface of the first groove 21.

[0077] The ratio of the diameter of the first groove 21 to the diameter of the target back plate 2 is 0.6:1, and the diameter of the first groove 21 is 240mm.

[0078] The ratio of the depth of the first groove 21 to the thickness of the target back plate 2 is 0.21:1, and the depth of the first groove 21 is 3mm.

[0079] The first groove 21 has a square cross-section along the axial direction of the target back plate 2.

[0080] The second groove 22 deepens in the first groove 21 from the cooling surface to the welding surface, forming six concentric annular water channels.

[0081] The ratio of the outermost diameter of the second groove 22 to the diameter of the target back plate 2 is 0.6:1, and the outermost diameter of the second groove 22 is 240mm.

[0082] The width of the annular waterway is 8mm, and the distance between adjacent annular waterways is 10mm.

[0083] The ratio of the depth of the annular water channel to the thickness of the target back plate 2 is 0.5:1, and the depth of the annular water channel is 7mm.

[0084] The bottom surface of the annular waterway is a plane.

[0085] The sputtering target 1 includes a sputtering surface and a back surface.

[0086] The back side of the sputtering target 1 is connected to the welding surface of the target back plate 2.

[0087] The sputtering surface of the sputtering target 1 is set as an inclined surface along the outer edge of the sputtering target.

[0088] This embodiment greatly increases the contact area between the backplate and the cooling water by creating a first groove on the cooling surface of the backplate and further deepening the annular water channel in the first groove, thereby improving the cooling effect. After long-term sputtering use, the deformation of the backplate is not obvious. At the same time, it increases the distance between the center of the backplate and the magnet assembly in the sputtering equipment, so that the backplate will not scratch or interfere with the magnet assembly.

[0089] Comparative Example 1

[0090] This comparative example provides a... Figure 3 The sputtering target assembly shown.

[0091] The sputtering target assembly includes a sputtering target 1 and a target backplate 2.

[0092] The target backplate 2 has a diameter of 400 mm and a thickness of 14 mm.

[0093] The target backplate 2 includes a welding surface and a cooling surface, and a first groove 21 with a trapezoidal cross-section is formed on the cooling surface.

[0094] The first groove 21 has a diameter of 320 mm and a depth of 5 mm, and the inclination of the side of the first groove 21 is 30°.

[0095] The sputtering target 1 includes a sputtering surface and a back surface.

[0096] The back side of the sputtering target 1 is connected to the welding surface of the target back plate 2.

[0097] The sputtering surface of the sputtering target 1 is set as an inclined surface along the outer edge of the sputtering target.

[0098] Compared to Examples 1-3, the target backplate in this comparative example has a significantly reduced contact area between the cooling water and the backplate, resulting in a decreased cooling effect. After prolonged sputtering, the deformation of the backplate increases, and the depth of the trapezoidal groove is insufficient, which easily leads to scratching interference with the magnet assembly.

[0099] In summary, the target backplate provided by this utility model has a first groove on its cooling surface, and an annular water channel is further deepened in the first groove, which greatly increases the contact area between the backplate and the cooling water, improves the cooling effect, and reduces the deformation of the backplate after long-term sputtering use. At the same time, it increases the distance between the center of the backplate and the magnet assembly, so that even if the backplate deforms after long-term sputtering use, it will not scratch or interfere with the magnet assembly.

[0100] The above description is only a specific embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present utility model fall within the protection and disclosure scope of the present utility model.

Claims

1. A target backplate, characterized in that, The target backplate includes a welding surface and a cooling surface, and a first groove is formed on the cooling surface; A second groove is provided on the bottom surface of the first groove; The second groove deepens in the first groove from the cooling surface to the welding surface, forming at least three concentric annular water channels.

2. The target backplate according to claim 1, characterized in that, The ratio of the diameter of the first groove to the diameter of the target back plate is (0.6-0.8):

1.

3. The target backplate according to claim 1, characterized in that, The ratio of the depth of the first groove to the thickness of the target backing plate is (0.2-0.5):

1.

4. The target backplate according to claim 1, characterized in that, The first groove has a square cross-section along the axial direction of the target back plate.

5. The target backplate according to claim 1, characterized in that, The ratio of the outermost diameter of the second groove to the diameter of the target back plate is (0.6-0.8):

1.

6. The target backplate according to claim 5, characterized in that, The width of the annular waterway is 4-8 mm; The distance between adjacent annular waterways is 6-20 mm.

7. The target backplate according to claim 1, characterized in that, The ratio of the depth of the annular waterway to the thickness of the target backplate is (0.2-0.5):

1.

8. The target backplate according to claim 1, characterized in that, The bottom surface of the annular waterway is a plane.

9. The target backplate according to claim 1, characterized in that, The target backplate has a diameter of 300-500mm and a thickness of 10-15mm.

10. A sputtering target assembly, characterized in that, The sputtering target assembly includes a sputtering target and a target backplate as described in any one of claims 1-9; The back side of the sputtering target is connected to the welding surface of the target back plate.

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