A power semiconductor motor module

Abstract

The utility model discloses a kind of power semiconductor motor drive module, including multiple drive chips, multiple power switch tubes, current sensor, every drive chip controls n power switch tube, the current sensor is installed in the circuit of monitoring facility power semiconductor device current;The application is arranged on the circuit of the semiconductor power device by the current sensor, monitors the current value of the failure condition such as the thermal effect of semiconductor power device, when current value exceeds threshold value or exceeds threshold value predetermined time, semiconductor power device is turned off or adjusted, and can cooperate temperature sensor, inductance short-circuit protection sensing component, anti-electromagnetic interference protection component, current noise control component etc. Any one or any several combinations, corresponding parameter in common monitoring module, when exceeding expected threshold value, turn off or adjust power semiconductor state, avoid failure or damage etc.

Description

Technical Field

[0001] This invention belongs to the field of power electronics and relates to power semiconductor motor modules. Background Technology

[0002] In today's power electronics field, power electronic modules exhibit diverse packaging forms and application characteristics. There are two main types: First, a basic module combination is formed by simply packaging a cascaded IGBT (Insulated Gate Bipolar Transistor) with a fast recovery diode or MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor); second, the drive circuit is further packaged together with the IGBT or MOSFET, creating a more integrated module style.

[0003] When designing power semiconductor motor modules, given that the main causes of mechanical and electrical failures in power semiconductors, such as overcurrent, overvoltage, and overtemperature, lie in thermal effects, electric field migration, piezoelectric effects, and radiation effects, and that in power electronics applications such as home appliances and industry, most failure modes are indirectly or directly caused by thermal effects, which in turn can directly or indirectly lead to local or overall overcurrent, current control is considered the core of the entire module design. Therefore, finding new methods and approaches is needed to design power semiconductor motor modules that avoid thermal damage. Summary of the Invention

[0004] In view of this, to overcome at least one of the above-mentioned defects in the prior art, the present invention provides a power semiconductor motor module, comprising: multiple driver chips, multiple power switching transistors, and a current sensor, wherein each driver chip controls n power switching transistors; the multiple power switching transistors form a three-phase full-bridge, a two-phase full-bridge, or a half-bridge circuit, wherein when a three-phase full-bridge circuit is formed, there are m power switching transistors and m / n driver chips, and when a two-phase full-bridge or half-bridge circuit is formed, there are i power switching transistors and i / n driver chips, wherein the current sensor is installed in the main circuit for monitoring the current of the power semiconductor device, where m, n, and i are natural numbers.

[0005] Multiple power switches form a three-phase full-bridge, two-phase full-bridge, or half-bridge circuit. When forming a three-phase full-bridge circuit, m=6, n=2, then there are 6 power switches and 3 driver chips. When forming a two-phase full-bridge circuit, i=4, n=2, then there are 4 power switches and 2 driver chips. When forming a half-bridge circuit, i=2, n=2, then there are 2 power switches and 1 driver chip. The current sensor is installed in the circuit that monitors the current of the power semiconductor devices in the facility. The relationship between the driver chip and the switching transistors can be varied, such as 1:1, 1:2, or even 1:6, meaning that multiple switching transistors can be driven, and multiple switching transistors can be connected in parallel to obtain a larger current capacity.

[0006] Multiple power switches form a three-phase full-bridge or two-phase full-bridge circuit. When forming a three-phase full-bridge circuit, there are six power switches and three driver chips; when forming a two-phase full-bridge circuit, there are four power switches and two driver chips; when forming a half-bridge circuit, there are two power switches and one driver chip. The current sensor is installed in the circuit that monitors the current of the power semiconductor devices. The current sensor is located on the output line, either after two power switches controlled by the same driver chip, or it monitors the current flowing through each power switch.

[0007] As described in the background section of this invention, in the application of power semiconductor motor modules, most failure modes are caused indirectly or directly by thermal effects, which in turn can directly or indirectly lead to local or overall overcurrent. The power semiconductor motor module disclosed in this invention uses a current sensor installed on the main circuit of the semiconductor power device to monitor current values ​​affecting failure conditions such as thermal effects. When the current value exceeds a threshold or exceeds the threshold for a predetermined time, the semiconductor power device is shut down or adjusted. This module can also be used in conjunction with any one or more of the following components: a temperature sensor, an inductive short-circuit protection sensor, an electromagnetic interference protection component, and a current noise control component, to jointly monitor corresponding parameters in the module. When the expected threshold is exceeded, the power semiconductor state is shut down or adjusted to prevent failure or damage.

[0008] In addition, the power semiconductor motor module disclosed in this invention also has the following additional technical features:

[0009] Furthermore, when a three-phase full-bridge circuit is formed, there are 6 power switching transistors, 3 driving chips, and 2 current sensors, with the current sensors located on phases U and W.

[0010] Furthermore, if the current value measured by the current sensor is within the expected range, the power switch is in normal working condition; if the current value measured by the current sensor exceeds the expected current threshold, the power switch receives a trigger signal to turn off or adjust the input current.

[0011] or

[0012] After the current value measured by the current sensor exceeds the expected current threshold for a predetermined time, the power switch receives a trigger signal to turn off or adjust the input current.

[0013] Furthermore, the power semiconductor motor module is also equipped with a temperature sensing component; when the temperature measured by the temperature sensing component is within the expected range, the power switch is in normal working condition; when the temperature measured by the temperature sensing component exceeds the expected temperature threshold, the power switch receives a trigger signal to turn off or adjust the input current.

[0014] or

[0015] After the temperature measured by the temperature sensing component exceeds the expected temperature threshold for a predetermined time, the power switch receives a trigger signal to turn off or adjust the input current.

[0016] Furthermore, the power semiconductor motor module is also equipped with a circuit short-circuit protection sensing component; the circuit short-circuit protection sensing component includes the internal detection circuit and control logic components of the module. When the circuit is short-circuited, the power switch receives a trigger signal to turn off or adjust the input current.

[0017] Furthermore, the power semiconductor motor module is also provided with an electromagnetic interference protection component, which includes an electromagnetic shielding component, a filtering component, or any combination of the above components.

[0018] Furthermore, the power semiconductor motor module is also provided with a current noise control component; the current noise control component includes a pre-designed current noise control circuit and a pre-designed sensor layout structure that can effectively control current noise.

[0019] Furthermore, the driver chip controls the power switch to turn on or off when it receives a trigger signal.

[0020] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0021] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0022] Figure 1 This is a schematic diagram of the power semiconductor motor module of the present invention. Detailed Implementation

[0023] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0024] In the description of this invention, it should be understood that the terms "upper", "lower", "bottom", "top", "front", "back", "inner", "outer", "horizontal", "vertical", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0025] In the description of this invention, it should be understood that the terms "upper", "lower", "bottom", "top", "front", "back", "inner", "outer", "horizontal", "vertical", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0026] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "connection", "connection", "linking", "cooperation" should be interpreted broadly. For example, they can refer to a fixed connection, an integral connection, or a detachable connection; they can refer to the internal connection of two components; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0027] The current monitoring structure of the power electronic module of the present invention will now be described with reference to the accompanying drawings. Figure 1 This is a schematic diagram of the power semiconductor motor module of the present invention.

[0028] According to embodiments of the present invention, such as Figure 1 It includes multiple driver chips, multiple power switches, and a current sensor. Each driver chip controls two power switches.

[0029] Multiple power switches form a three-phase full-bridge or two-phase full-bridge circuit. When forming a three-phase full-bridge circuit, there are 6 power switches and 3 driver chips. When forming a two-phase full-bridge circuit, there are 4 power switches and 2 driver chips. When forming a half-bridge circuit, there are 2 power switches and 1 driver chip. The current sensor is installed in the main circuit for monitoring the current of the power semiconductor devices. The current sensor is located on the output line. The current sensor is located after two power switches controlled by the same driver chip, or the current sensor monitors the current flowing through each power switch.

[0030] According to some embodiments of the present invention, when a three-phase full-bridge circuit is formed, there are 6 power switching transistors, 3 driving chips, and 2 current sensors, with the current sensors located on phases U and W.

[0031] According to some embodiments of the present invention, when the current value measured by the current sensor is within the expected range, the power switch is in normal working condition; when the current value measured by the current sensor exceeds the expected current threshold, the power switch receives a trigger signal to turn off or adjust the input current.

[0032] or

[0033] After the current value measured by the current sensor exceeds the expected current threshold for a predetermined time, the power switch receives a trigger signal to turn off or adjust the input current.

[0034] According to some embodiments of the present invention, the power semiconductor motor module is further provided with a temperature sensing component; when the temperature measured by the temperature sensing component is within the expected range, the power switch is in normal working condition; when the temperature measured by the temperature sensing component exceeds the expected temperature threshold, the power switch receives a trigger signal to turn off or adjust the input current.

[0035] or

[0036] After the temperature measured by the temperature sensing component exceeds the expected temperature threshold for a predetermined time, the power switch receives a trigger signal to turn off or adjust the input current.

[0037] According to some embodiments of the present invention, the power semiconductor motor module is further provided with a circuit short-circuit protection sensing component; the circuit short-circuit protection sensing component includes an internal detection circuit and control logic components of the module, and when the circuit is short-circuited, the power switch receives a trigger signal to turn off or adjust the input current.

[0038] According to some embodiments of the present invention, the power semiconductor motor module is further provided with an electromagnetic interference protection component, which includes an electromagnetic shielding component, a filtering component, or any combination thereof.

[0039] According to some embodiments of the present invention, the power semiconductor motor module is further provided with a current noise control component; the current noise control component includes a pre-designed current noise control circuit and a pre-designed sensor layout structure capable of effectively controlling current noise.

[0040] According to one embodiment of the present invention, the driver chip controls the power semiconductor to be turned on or off when it receives a trigger signal.

[0041] According to an embodiment of the present invention, there are multiple driver chips (Dr2, Dr3, Dr4), power switching transistors (Q2-Q7), current sensors (SA2, SA3), and a temperature sensor (ST2). The power supply provides power to the motor (M) through the circuit. The driver chips receive control signals and control the conduction and cutoff of the power switching transistors. The current sensors (SA2, SA3) are used to detect the current magnitude in the circuit for current monitoring and protection. When overcurrent is detected, corresponding protective measures can be taken. The temperature sensor (ST2) is used to monitor the temperature in the circuit to prevent damage to components due to overheating. By rationally controlling the conduction and cutoff sequence of the power switching transistors, the direction and magnitude of the current in the motor windings can be changed, thereby realizing functions such as forward rotation, reverse rotation, and speed regulation of the motor. For example, by controlling the conduction and cutoff of Q4-Q7, the three-phase current of the motor can be controlled, thereby controlling the operating state of the motor. This motor drive circuit can effectively convert electrical energy into mechanical energy and, through various sensors, achieve circuit protection and monitoring, ensuring the safe and stable operation of the motor drive system.

[0042] According to an embodiment of the present invention, when a short circuit fault occurs in the U, V, and W phases, the module can automatically activate the protection mechanism to prevent damage to the module caused by overcurrent due to the short circuit. Through internal monitoring circuitry and control logic, it reacts rapidly at the moment of the short circuit, ensuring the safety of the module and the entire motor drive system.

[0043] According to an embodiment of the present invention, a current sensor in the module monitors the circuit current in real time. When the current exceeds a preset protection value, the module immediately activates the protection function. This mechanism effectively avoids damage to the power switching transistors due to current overload, ensuring that the module operates within a safe current range. After detecting an abnormality, the current sensor quickly triggers the protection action, cutting off or adjusting the current path.

[0044] According to an embodiment of the present invention, the module has a built-in temperature sensor for real-time monitoring of the module's operating temperature. When the temperature rises and exceeds the module's maximum withstand temperature, the module automatically activates protection measures. This prevents thermal effects caused by overheating, avoiding power switch failure and potential cascading problems such as overcurrent. The module is designed with efficient thermal management strategies in mind; after the temperature over-limit protection is triggered, measures such as reducing power output, adjusting the operating mode, or issuing alarms may be taken.

[0045] According to embodiments of the present invention, the module's protection functions can maintain normal operation and remain unaffected by external EFT (Electrical Fast Transient / Bulk) injection interference or other EMS (Electromagnetic Susceptibility) interference. This ensures that the module can reliably perform the aforementioned protection functions even in application scenarios with harsh electromagnetic environments. The module employs electromagnetic shielding, filtering, and other technical measures to ensure stability and reliability under electromagnetic interference environments.

[0046] According to embodiments of the present invention, since the current sensor detects the U, V, and W phase currents of the motor, it can effectively control current noise. This helps reduce the impact of current noise on module performance, improves module efficiency and signal quality, and also reduces the risk of other circuit failures that may be caused by current noise, ensuring stable operation of the module in a low-noise environment.

[0047] Any reference to "an embodiment," "embodiment," "illustrative embodiment," etc., means that the specific component, structure, or feature described in connection with that embodiment is included in at least one embodiment of the present invention. Such illustrative expressions throughout this specification do not necessarily refer to the same embodiment. Furthermore, when a specific component, structure, or feature is described in connection with any embodiment, it is claimed that implementing such a component, structure, or feature in connection with other embodiments falls within the scope of those skilled in the art.

[0048] Although specific embodiments of the invention have been described in detail with reference to several illustrative examples, it should be understood that those skilled in the art can devise various other modifications and embodiments that fall within the spirit and scope of the invention. Specifically, reasonable variations and modifications can be made to the arrangement of components and / or dependent combinations within the scope of the foregoing disclosure, drawings, and claims without departing from the spirit of the invention. The scope of these variations and modifications, apart from those concerning components and / or layout, is defined by the appended claims and their equivalents.

Claims

1. A power semiconductor motor module, characterized in that... It includes: multiple driver chips, multiple power switches, current sensors, and each driver chip controls n power switches; Multiple power switching transistors form a three-phase full-bridge, two-phase full-bridge, or half-bridge circuit. When forming a three-phase full-bridge circuit, there are m power switching transistors and m / n driver chips. When forming a two-phase full-bridge or half-bridge circuit, there are i power switching transistors and i / n driver chips. The current sensor is installed in the circuit that monitors the current of the power semiconductor device in the facility, where m, n, and i are natural numbers.

2. The power semiconductor motor module according to claim 1, characterized in that, Multiple power switching transistors form a three-phase full-bridge, two-phase full-bridge, or half-bridge circuit. When forming a three-phase full-bridge circuit, m=6, n=2, then there are 6 power switching transistors and 3 driver chips. When forming a two-phase full-bridge circuit, i=4, n=2, then there are 4 power switching transistors and 2 driver chips. When forming a half-bridge circuit, i=2, n=2, then there are 2 power switching transistors and 1 driver chip. The current sensor is installed in the circuit that monitors the current of the power semiconductor devices in the facility.

3. The power semiconductor motor module according to claim 1, characterized in that, When a three-phase full-bridge circuit is formed, there are 6 power switching transistors, 3 driver chips, and 2 current sensors, with the current sensors located on phases U and W.

4. The power semiconductor motor module according to claim 1, characterized in that, When a three-phase full-bridge, two-phase full-bridge, or half-bridge circuit is formed, there are multiple power switching transistors, and only one driver chip is needed after integrated design. The current sensor is installed in the circuit that monitors the current of the power semiconductor devices in the facility.

5. The power semiconductor motor module according to claim 1, characterized in that, If the current value measured by the current sensor is within the expected range, the power switch is in normal working condition. If the current value measured by the current sensor exceeds the expected current threshold, the power switch receives a trigger signal to turn off or adjust the input current. or After the current value measured by the current sensor exceeds the expected current threshold for a predetermined time, the power switch receives a trigger signal to turn off or adjust the input current.

6. The power semiconductor motor module according to claim 1, characterized in that, The power semiconductor motor module is also equipped with a temperature sensing component; when the temperature measured by the temperature sensing component is within the expected range, the power switch is in normal working condition; when the temperature measured by the temperature sensing component exceeds the expected temperature threshold, the power switch receives a trigger signal to turn off or adjust the input current. or After the temperature measured by the temperature sensing component exceeds the expected temperature threshold for a predetermined time, the power switch receives a trigger signal to turn off or adjust the input current.

7. The power semiconductor motor module according to claim 1, characterized in that, The power semiconductor motor module is also equipped with a circuit short-circuit protection sensing component; the circuit short-circuit protection sensing component includes the internal detection circuit and control logic components of the module. When the circuit is short-circuited, the power switch receives a trigger signal to turn off or adjust the input current.

8. The power semiconductor motor module according to claim 1, characterized in that, The power semiconductor motor module is also provided with an electromagnetic interference protection component, which includes an electromagnetic shielding component, a filtering component, or any combination of the above components.

9. The power semiconductor motor module according to claim 1, characterized in that, The power semiconductor motor module is also equipped with a current noise control component; the current noise control component includes a pre-designed current noise control circuit and a pre-designed sensor layout structure that can effectively control current noise.

10. The power semiconductor motor module according to claim 1, characterized in that, When the driver chip receives a trigger signal, it controls the power switch to turn on or off.

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