Mask assembly, evaporation device and chip

Abstract

This application relates to a photomask assembly, a vapor deposition apparatus, and a chip. The photomask assembly includes: a photomask with a plurality of through-holes; and a magnetic plate configured to adhere to the photomask across a substrate to be vapor-deposited; the magnetic plate is a continuous plate-like structure. The photomask assembly, vapor deposition apparatus, and chip of this application exhibit minimal photomask deformation during the vapor deposition process, resulting in a high-quality vapor-deposited film.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a mask assembly, a vapor deposition apparatus, and a chip. Background Technology

[0002] Inorganic LCOS uses vacuum evaporation to form the alignment layer. Specifically, a mask is placed on the CMOS substrate, and the evaporation material passes through the cutout areas of the mask to be deposited on the CMOS substrate. However, during the evaporation process, the mask is prone to deformation due to stress, which affects the quality of the alignment film. Utility Model Content

[0003] Therefore, it is necessary to provide a mask assembly, a vapor deposition apparatus, and a chip that are not easily deformed during the vapor deposition process and produce high-quality vapor-deposited films.

[0004] The first aspect of this application provides a mask assembly, including:

[0005] A photomask, having several through-holes; and

[0006] The magnetic accumulator is configured to adhere to the photomask across the substrate to be vapor-deposited; the magnetic accumulator is a continuous plate-shaped component.

[0007] In one embodiment, the openings are spaced apart from each other, and the projection of the magnetic plate on the mask covers the area where all the openings are located.

[0008] In one embodiment, the magnetic plate is configured as a soft magnet, which has a first state of magnetic adsorption and a second state of demagnetization.

[0009] The photomask includes a metallic material capable of magnetically attracting the magnetic plate; or

[0010] The photomask comprises a magnetic material capable of magnetically attracting the magnetic plate.

[0011] In one embodiment, the mask includes a shielding structure formed in a mesh shape, wherein the mesh openings in the shielding structure form openings;

[0012] At least part of the shielding structure has a reinforcing structure on the first surface away from the magnetic plate.

[0013] In one embodiment, the wall of the opening extends along the thickness direction of the mask;

[0014] The reinforcing structure includes a first sidewall that connects to and surrounds the edge of each opening, the first sidewall forming an acute angle with the first surface.

[0015] In one embodiment, the first sidewall of the edge of the adjacent opening has an angle equal to that of the first surface.

[0016] In one embodiment, the cross-section of the reinforcing structure located between two adjacent openings along its own extension direction is an isosceles triangle or an isosceles trapezoid.

[0017] In one embodiment, the thickness dimension D1 of the shielding structure along the thickness direction of the mask is less than 0.1 mm;

[0018] The maximum value D2 of the sum of the thickness dimensions of the shielding structure and the reinforcing structure along the thickness direction of the mask is greater than 0.1 mm and less than 0.5 mm.

[0019] In one embodiment, the extension length D3 of the first sidewall 51 in the cross-section of the corresponding reinforcing structure along its own extension direction is 100um~0.15mm.

[0020] A second aspect of this application provides a vapor deposition apparatus, including a vapor deposition source and the aforementioned mask assembly;

[0021] The vapor deposition source is located on the side of the mask away from the magnetic plate.

[0022] A third aspect of this application provides a chip in which a vapor deposition operation is performed using the vapor deposition apparatus described above during the chip manufacturing process.

[0023] The beneficial effects of the aforementioned mask assembly, evaporation apparatus, and chip are as follows:

[0024] By setting up a magnetic suction plate, which is configured to be able to adhere to the mask across the substrate to be vaporized, the magnetic suction plate is constructed as a continuous plate. Due to the magnetic attraction force on the mask towards the magnetic suction plate, the area of ​​the mask facing the magnetic suction plate is firmly pressed onto the substrate to be vaporized. This can significantly improve the deformation problem of the mask, resulting in better quality of the vaporized film layer, and also increase the service life of the mask.

[0025] The magnetic chuck is constructed as a continuous plate, meaning it is a single, unbroken plate without any openings or holes. This ensures a more uniform magnetic attraction across the area of ​​the photomask directly opposite the chuck, effectively preventing photomask deformation. Attached Figure Description

[0026] Figure 1 A side cross-sectional view of the structure of the mask assembly provided in the embodiments of this application;

[0027] Figure 2 A partial top view of the mask assembly provided in an embodiment of this application;

[0028] Figure 3 In order to be in Figure 2 A partial cross-sectional view of the mask obtained after cutting at point AA;

[0029] Figure 4 A schematic diagram illustrating the application process of the mask assembly provided in the embodiments of this application;

[0030] Figure 5 This is a schematic diagram of the vapor deposition apparatus provided in an embodiment of this application.

[0031] Explanation of icon numbers:

[0032] 100. Mask assembly;

[0033] 10. Mask; 11. Opening; 111. Hole wall;

[0034] 20. Magnetic chuck;

[0035] 30. Obstruction structure;

[0036] 40. Substrate to be vapor-deposited;

[0037] 50. Reinforcing structure; 51. First sidewall;

[0038] 60. Positioning fixture;

[0039] F, First surface; H, Thickness direction of the photomask;

[0040] 200. Evaporation equipment; 210. Evaporation source. Detailed Implementation

[0041] To make the above-mentioned objects, features, and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a full understanding of this utility model. However, this utility model can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this utility model. Therefore, this utility model is not limited to the specific embodiments disclosed below.

[0042] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0043] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this utility model, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0044] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0045] In this utility model, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0046] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0047] Figure 1 A side cross-sectional view of the structure of the mask assembly provided in the embodiments of this application; Figure 2 A partial top view of the mask assembly provided in an embodiment of this application; Figure 3 In order to be in Figure 2 A partial cross-sectional view of the mask obtained after cutting at point AA; Figure 4 This is a schematic diagram illustrating the application process of the mask assembly provided in the embodiments of this application.

[0048] The mask assembly of this application is described below with reference to the accompanying drawings. The mask assembly can be applied in the evaporation process. In this application embodiment, the mask assembly is used in the fabrication process of an LCOS chip as an example. The substrate to be evaporated can be, for example, a CMOS chip, and the evaporated film layer can be, for example, an alignment film. Of course, this application is not limited to this and can also be applied to the evaporation process of other film layers.

[0049] Reference Figure 1 , Figure 2 The mask assembly 100 provided in this application embodiment includes a mask 10 and a magnetic plate 20.

[0050] The photomask 10 has several through-holes 11. The magnetic plate 20 is configured to adhere to the photomask 10 through the substrate 40 to be deposited. The magnetic plate 20 is a continuous plate.

[0051] By setting up a magnetic suction plate 20, which is configured to be able to adhere to the mask 10 across the substrate 40 to be vaporized, and the magnetic suction plate 20 is constructed as a continuous plate, the mask 10 is subjected to a magnetic attraction force towards the magnetic suction plate 20. This magnetic attraction force firmly presses various parts of the mask 10 in the area directly opposite the magnetic suction plate 20 onto the substrate 40 to be vaporized, which can significantly improve the deformation problem of the mask 10, resulting in better quality of the vaporized film layer, and also increasing the service life of the mask 10.

[0052] The magnetic chuck 20 is constructed as a continuous plate, meaning that it is a continuous plate without any openings or holes. This ensures that the area on the mask 10 directly opposite the magnetic chuck 20 has a relatively uniform magnetic attraction force, which better prevents deformation of the mask 10.

[0053] In practical use, the mask 10 can be placed on the vapor deposition side (i.e., the front side) of the substrate 40 to be vapor deposited, and the magnetic plate 20 can be placed on the opposite side (back side) of the substrate 40 to be vapor deposited. At this time, the mask 10 and the magnetic plate 20 are magnetically attracted to each other, so that the mask 10 can be attached to the vapor deposition side surface of the substrate 40 to be vapor deposited.

[0054] The shape of the opening 11 can be square, or it can be set to other shapes according to the needs of the vapor-deposited film layer. When there are multiple openings 11, the openings 11 can be arranged in an array.

[0055] Understandably, in Figure 2 In the example, only part of the structure of mask 10 is drawn for easy observation. The parts that are not drawn are similar to this part and will not be described again here.

[0056] Of course, the mask assembly 100 may also include a positioning fixture 60 for positioning the substrate 40 to be vapor-deposited into a preset position in the vapor deposition apparatus. The portion of the positioning fixture 60 located on the back side of the substrate 40 to be vapor-deposited may abut against the magnetic chuck 20 to assist in positioning the horizontal position of the magnetic chuck 20.

[0057] In this embodiment, the openings 11 are arranged at intervals, and the projection of the magnetic plate 20 on the mask 10 covers the setting area of ​​all the openings 11.

[0058] The area on the photomask 10 with openings 11 is also the vapor deposition area of ​​the photomask 10. The projection of the magnetic plate 20 on the photomask 10 covers all areas with openings 11, meaning that during vapor deposition, all vapor deposition areas are located directly opposite the magnetic plate 20. This ensures that the areas with openings 11 on the photomask 10 receive a relatively uniform magnetic attraction force, minimizing the deformation of the photomask 10.

[0059] In some embodiments, the outer contour of the magnetic plate 20 may coincide with the mask 10 to cover all areas of the mask 10 as much as possible, so that the entire mask 10 can be reliably magnetically attracted to the magnetic plate 20.

[0060] In this embodiment, to ensure reliable attraction between the mask 10 and the magnetic chuck 20, the magnetic chuck 20 can be configured as a soft magnet, having a first state of magnetic attraction and a second state of demagnetization. Correspondingly, the mask 10 includes a metallic material capable of magnetically attracting the magnetic chuck 20. Alternatively, the mask 10 may include a magnetic material capable of magnetically attracting the magnetic chuck 20. It is understood that in this case, the magnetic type of the magnetic material included in the mask 10 is opposite to the magnetic type of the magnetic chuck 20.

[0061] Since the magnetic chuck 20 is configured as a soft magnet, which has a first state of magnetic attraction and a second state of demagnetization, during the vapor deposition process, the magnetic chuck 20 can be in the first state, allowing the mask 10 to be firmly attached to the substrate 40 to be vapor-deposited by the magnetic attraction of the magnetic chuck 20. After the vapor deposition is completed, the magnetic chuck 20 is placed in the second state of demagnetization, thus facilitating the removal of the magnetic chuck 20 from the substrate 40.

[0062] It is understandable that a soft magnet is essentially a type of magnet. For example, a soft magnet can demagnetize after the temperature exceeds a preset temperature, placing it in a second state. When the temperature is below the preset temperature, the soft magnet is in a first state. Of course, this preset temperature must be higher than the process temperature during vapor deposition.

[0063] In this embodiment of the application, combined with Figure 1 and Figure 3 The mask 10 includes a mesh-like shielding structure 30, with mesh openings 11 formed in the shielding structure 30. At least a portion of the shielding structure 30 has a reinforcing structure 50 on its first surface F facing away from the magnetic plate 20.

[0064] By providing a reinforcing structure 50 on the first surface F of at least partially obscuring the structure 30, the strength of the area where the opening 11 of the mask is set can be enhanced to a certain extent, making the mask 10 less prone to deformation.

[0065] Of course, the reinforcing structure 50 can be integrally formed with the shielding structure 30, that is, the reinforcing structure 50 and the shielding structure 30 can be formed simultaneously in the same process. Alternatively, the reinforcing structure 50 can be formed separately from the shielding structure 30.

[0066] Furthermore, the hole wall 111 of the opening 11 extends along the thickness direction of the mask 10. This facilitates the entry of the vapor deposition material into the opening 11 and its formation on the surface of the substrate 40 to be vapor deposited. The final vapor-deposited film layer is actually located in the opening 11, that is, the thickness of the vapor-deposited film layer is less than or equal to the thickness of the shielding structure 30.

[0067] Combination Figure 1 and Figure 3The reinforcing structure 50 includes a first sidewall 51 that connects to and surrounds the edge of each opening 11, and the angle α between the first sidewall 51 and the first surface F is an acute angle. This configuration allows the reinforcing structure 50 to have higher strength and a better strength enhancement effect.

[0068] Furthermore, the angle between the first sidewall 51 of the edge of the adjacent opening 11 and the first surface F is equal. For example Figure 2 , Figure 3 The two first sidewalls 51 of the adjacent openings 11 shown are both at an angle α with the first surface F. This ensures that the angles between the first sidewalls 51 of each adjacent opening 11 and the first surface F are equal, thus making the thickness and size of the vapor-deposited film layer formed in the two adjacent openings 11 the same. This ensures that the vapor-deposited film formed when each opening 11 is used as a vapor deposition area is identical.

[0069] Of course, it is also possible that the angle between the first sidewall 51 of the edge of each opening 11 and the first surface F is equal.

[0070] In this embodiment, the reinforcing structure 50 located between two adjacent openings 11 has an isosceles triangle or an isosceles trapezoid in cross-section along its extension direction. Figure 3 The example shown is a triangle, with the base of the reinforcing structure 50 positioned on the first surface F. In the example with an isosceles trapezoidal cross-section, the base of the isosceles trapezoid is also positioned on the first surface F.

[0071] Setting the cross-section of the reinforcing structure 50 along its extension direction as an isosceles triangle or an isosceles trapezoid is to facilitate the accurate deposition of the vapor deposition gas onto the preset position by means of the inclined surface of the isosceles triangle or isosceles trapezoid during the semiconductor (wafer / chip) vapor deposition process, so as to obtain a clear and accurate vapor deposition pattern and prevent the partial loss of vapor deposition pattern due to uneven vapor deposition, which would affect the chip performance.

[0072] Furthermore, the thickness dimension D1 of the masking structure 30 along the thickness direction H of the mask 10 is less than 0.1 mm.

[0073] The maximum value D2 of the sum of the thickness dimensions of the shielding structure 30 and the reinforcing structure 50 along the thickness direction H of the mask 10 is greater than 0.1 mm and less than 0.5 mm.

[0074] In this embodiment, the extension length D3 of the first sidewall 51 in the cross-section of the corresponding reinforcing structure 50 along its own extension direction is 100um~0.15mm.

[0075] The mask assembly 100 provided in this application utilizes magnetic adsorption to maintain / reduce deformation of the mask 10 during repeated use; the shielding structure 30 and the reinforcing structure 50 are configured to obtain a clear vapor deposition pattern and a thin and flat film layer; by setting a magnetic plate to reduce the deformation of the mask 10, adjusting the structure of the shielding structure 30 and the reinforcing structure 50, and increasing the parameters to increase the strength of the mask 10, the service life of the mask assembly 100 is extended.

[0076] In this embodiment of the application, when the mask assembly 100 is used in the vapor deposition process, the vapor deposition side of the substrate 40 to be vaporized can be oriented toward the vapor deposition source 210, and the substrate 40 to be vaporized can be tilted so that the mask 10 is oriented toward the vapor deposition source 210.

[0077] Figure 5 This is a schematic diagram of the vapor deposition apparatus provided in an embodiment of this application. (In conjunction with...) Figure 1 and Figure 5 A second aspect of this application also provides a vapor deposition apparatus 200, including a vapor deposition source 210 and the aforementioned mask assembly 100. The vapor deposition source 210 is disposed on the side of the mask 10 facing away from the magnetic suction plate 20.

[0078] Furthermore, the vapor deposition apparatus also includes a reaction chamber 220, and a mounting plate 230 is provided on the top wall of the reaction chamber 220. Multiple mask assemblies 100 are suspended at an angle on the mounting plate 230 so that each mask assembly 100 is arranged at an angle toward the vapor deposition source 210.

[0079] The chip provided in this application embodiment can be a display chip (such as the LCOS example above) or an integrated chip with corresponding control functions. In its chip manufacturing process, the vapor deposition apparatus provided in the above embodiment is used to perform vapor deposition operation. For example, vapor deposition of metal can obtain an integrated circuit for transmitting electrical signals on the chip, and vapor deposition of dielectric materials with different refractive indices can achieve corresponding light filtering effects on the chip.

[0080] Furthermore, by using the vapor deposition apparatus provided in this application to perform the vapor deposition operation, the magnetic adsorption force between the mask assembly 100 can be used to prevent the deformation of the mask 10 while ensuring the flatness of the vapor deposition area. The mask assembly 100 is provided with a reinforcing structure 50. By utilizing the structural characteristics of the reinforcing structure 50, the vapor deposition gas can be accurately deposited at the target position, which is beneficial to improving the packaging accuracy of the subsequent chip and increasing the chip yield.

[0081] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0082] The embodiments described above are merely illustrative of several implementations of this utility model, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these all fall within the protection scope of this utility model. Therefore, the protection scope of this utility model patent should be determined by the appended claims.

Claims

1. A photomask assembly, characterized in that, include: A photomask, wherein the photomask has a plurality of through-holes; as well as A magnetic accumulator plate is configured to adhere to and engage with the photomask across a substrate to be vapor-deposited; the magnetic accumulator plate is constructed as a continuous plate.

2. The mask assembly according to claim 1, characterized in that, The openings are arranged at intervals from each other, and the projection of the magnetic plate on the mask covers the area where all the openings are located.

3. The mask assembly according to claim 1, characterized in that, The magnetic plate is configured as a soft magnet, which has a first state of magnetic adsorption and a second state of demagnetization. The mask includes a metallic material capable of magnetically attracting the magnetic plate; or The mask includes a magnetic material capable of magnetically attracting the magnetic plate.

4. The mask assembly according to any one of claims 1-3, characterized in that, The mask includes a mesh-like shielding structure, wherein the mesh openings in the shielding structure form the openings; At least a portion of the shielding structure has a reinforcing structure on the first surface away from the magnetic plate.

5. The mask assembly according to claim 4, characterized in that, The wall of the opening extends along the thickness direction of the mask. The reinforcing structure includes a first sidewall that connects to and surrounds the edge of the opening of each of the openings, the first sidewall forming an acute angle with the first surface.

6. The mask assembly according to claim 5, characterized in that, The angle between the first sidewall and the first surface at the edge of the adjacent opening is equal.

7. The mask assembly according to claim 6, characterized in that, The cross-section of the reinforcing structure located between two adjacent openings along its own extension direction is an isosceles triangle or an isosceles trapezoid.

8. The mask assembly according to claim 5, characterized in that, The thickness dimension D1 of the shielding structure along the thickness direction of the mask is less than 0.1 mm; The maximum value D2 of the sum of the thickness dimensions of the shielding structure and the reinforcing structure along the thickness direction of the mask is greater than 0.1 mm and less than 0.5 mm. The extension length D3 of the first sidewall in the cross section of the corresponding reinforcing structure along its own extension direction is 100um~0.15mm.

9. A vapor deposition apparatus, characterized in that, Includes a vapor deposition source and a mask assembly as described in any one of claims 1-8; The vapor deposition source is located on the side of the mask opposite to the magnetic plate.

10. A chip, characterized in that, In the chip manufacturing process, the vapor deposition operation is performed using the vapor deposition apparatus as described in claim 9.

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