Magnetron sputtering hollow cathode, magnetron sputtering system and solar cell production line

Abstract

This utility model relates to the field of sputtering coating technology, and discloses a magnetron sputtering hollow cathode, a magnetron detection system, and a solar cell production line. The magnetron sputtering hollow cathode includes: a shell with a first receiving cavity; a cathode body located within the first receiving cavity, the cathode body having a second receiving cavity; an offset block located at the bottom of the second receiving cavity, the offset block and the cathode body being energized to generate an electric field; a magnetic circuit module embedded inside the cathode body, the magnetic circuit module having a ring structure, the magnetic circuit module being used to generate a magnetic field; and a target material located within the second receiving cavity, the target material having a ring structure, the outer wall of the target material being fitted to the inner wall of the cathode body, the target material being located inside the magnetic circuit module, the extension direction of the centerline of the target material having a preset angle A with the surface of the sample to be coated facing the shell, thus avoiding direct bombardment of the sample by neutral particles of the target material generated by sputtering, thereby improving the sputtering efficiency.

Description

Technical Field

[0001] This utility model relates to the field of sputtering coating technology, specifically to magnetron sputtering hollow cathode, magnetron sputtering system and solar cell production line. Background Technology

[0002] Magnetron sputtering is a physical vapor deposition (PVD) coating method. The cathode is the core component of the magnetron sputtering apparatus, while the sample serves as the anode. Both are arranged in a high-vacuum chamber, through which a certain amount of gas, such as argon or xenon, is introduced. The pressure of the introduced gas is typically between 0.1 and 1 Pa. A high negative potential is then applied to the cathode, creating a high-intensity electric field between the cathode and the sample. Free electrons within the chamber are accelerated and collide with gas molecules, ionizing them to form a secondary free electron and a positive ion. The secondary electron can also be accelerated by the electric field to collide again, generating new electron-ion pairs. Finally, plasma is formed between the cathode and anode. When a free electron recombines with a positive ion, it releases photons, producing the characteristic glow of plasma. The positive ions are accelerated towards the cathode under the influence of the electric field, bombarding the target material. Through momentum transfer, surface atoms are sputtered out. These atoms are neutral and therefore unaffected by the electric field, allowing them to sputter onto the sample surface to form a film.

[0003] Conventional magnetron sputtering systems generate numerous high-energy particles and high-speed electrons that can directly reach the sample. The bombardment of the substrate by high-energy particles can cause structural changes in the device (such as the breaking of chemical bonds), while the energy dissipation from the bombardment of the substrate by electrons can cause the substrate to heat up, leading to thermal degradation of sensitive substrate layers (such as perovskites) and sputtering damage. Utility Model Content

[0004] In view of this, the present invention provides a magnetron sputtering hollow cathode, a magnetron detection system, and a solar cell production line to solve the problem of sample substrate damage caused by high-energy particles generated by the magnetron sputtering system directly bombarding the sample in the prior art.

[0005] In a first aspect, this utility model provides a magnetron sputtering hollow cathode. The magnetron sputtering hollow cathode includes: a shell having a first receiving cavity; a cathode body located within the first receiving cavity, the cathode body having a second receiving cavity; an offset block located at the bottom of the second receiving cavity, the offset block and the cathode body being energized to generate an electric field; a magnetic circuit module embedded inside the cathode body, the magnetic circuit module having a ring structure, the magnetic circuit module being used to generate a magnetic field; and a target material located within the second receiving cavity, the target material having a ring structure, the outer wall of the target material being fitted to the inner wall of the cathode body, the target material being located inside the magnetic circuit module, the extension direction of the centerline of the target material having a preset angle A with the surface of the sample to be coated facing the shell.

[0006] By setting the cathode body as an inner ring structure and placing the offset block at the bottom of the cathode body, with the offset block connected to the positive electrode and the cathode body connected to the negative electrode, an electric field is formed between the offset block and the cathode body. Simultaneously, a magnetic circuit module with a ring structure is set inside the cathode body to generate a magnetic field, allowing the electric and magnetic fields to work together. The target material is placed on the inner wall of the cathode body and is also set as a ring structure. The extension direction of the sputtering surface of the target material is angled to the extension direction of the surface of the sample to be coated facing the shell. This allows the sputtered plasma and neutral particles of the target material to accumulate within the inner ring space of the target material under the influence of the electric and magnetic fields. Simultaneously, the offset block generates an offset electric field, which, when a potential is applied, guides the trajectory of charged ions, further confining the plasma range and preventing the neutral particles of the target material from directly bombarding the sample to be coated, thus improving sputtering efficiency.

[0007] In one optional embodiment, the top of the cathode body is provided with an anode cover, the anode cover having a plate and an annular flange, the plate covering the opening of the housing, the plate having a through hole in the middle, the through hole being located in the second receiving cavity, the annular flange being disposed at the through hole and extending along the interior of the cathode body, the through hole forming a sputtering outlet.

[0008] By grounding the anode cover, the potential (positive potential) of the anode cover will affect the positive ions (such as Ar) in the plasma. + The electric field generates an attractive force, guiding the ions to accelerate along the electric field lines (from the anode cover to the cathode target), reducing the random scattering of ions and thus avoiding direct bombardment of the sample by ions, thereby improving sputtering efficiency.

[0009] In one optional embodiment, the cathode body is provided with an annular groove that extends through the end face of the cathode body, and the magnetic circuit module is disposed within the annular groove.

[0010] By placing the magnetic circuit module within the annular groove of the cathode body, the internal space of the housing can be effectively utilized.

[0011] In one optional embodiment, the bottom of the housing is provided with a hollow shaft, the cathode body is provided with a negative electrode interface, and the offset block is provided with a positive electrode interface. The negative electrode interface is connected to a negative cable, and the positive electrode interface is connected to a positive cable. The negative cable and the positive cable pass through the hollow shaft and are connected to an external negative power supply and an external positive power supply, respectively. This arrangement results in a compact structure and saves space.

[0012] In one optional embodiment, the cathode body is provided with a cooling water passage, and the bottom of the cathode body is provided with a water inlet and a water outlet. One end of the water inlet is connected to one end of the water inlet pipe, and one end of the water outlet is connected to one end of the water outlet pipe. The other ends of the water inlet and the other ends of the water outlet are respectively connected to the cooling water passage. The other ends of the water inlet and the other ends of the water outlet pass through the hollow shaft and are connected to an external circulating cooling water source.

[0013] By setting up a cooling water path, the temperature of the target material during sputtering can be reduced, preventing excessively high target temperatures from causing plasma instability and thus affecting the sputtering efficiency of neutral particles in the target material.

[0014] In one optional embodiment, the housing includes: a cathode support, which has a disc-shaped structure and a hollow shaft at its bottom; and a cathode shell, one end of which is connected to the outer periphery of the cathode support, the cathode shell having an annular structure, and the other end of which is connected to the anode cover.

[0015] In one optional embodiment, the magnetron sputtering hollow cathode further includes an insulating block disposed between the cathode body and the housing, the insulating block having a ring structure.

[0016] The annular structure of insulating block 8 physically separates the cathode body from the shell, blocking the conductive path and providing the necessary electric field conditions for plasma discharge.

[0017] Secondly, this utility model also provides a magnetron sputtering system, including: a vacuum chamber, a vacuum port and a gas inlet on the side wall of the vacuum chamber, the gas inlet being used to introduce a mixed gas, a magnetron sputtering hollow cathode, a portion of which is disposed within the vacuum chamber, the magnetron sputtering hollow cathode being the aforementioned magnetron sputtering hollow cathode.

[0018] Since the magnetron sputtering system includes a magnetron sputtering hollow cathode, which has the same effect as the magnetron sputtering hollow cathode, it will not be elaborated further here.

[0019] In one optional embodiment, a worktable is provided on the top of the vacuum chamber. The worktable is rotatably arranged and used to fix the sample to be coated. The magnetron sputtering hollow cathode is located below the worktable so that the sputtering outlet of the magnetron sputtering hollow cathode is correspondingly arranged with the position of the sample to be coated. A baffle assembly is provided on the top of the magnetron sputtering hollow cathode. The baffle assembly is rotatably arranged and has a blocking position for blocking the sputtering outlet and a clearance position for avoiding the sputtering outlet.

[0020] Thirdly, this utility model also provides a solar cell production line, including the aforementioned magnetron sputtering system.

[0021] Since the solar cell production line includes a magnetron sputtering system, which has the same effect as the magnetron sputtering system, it will not be elaborated on here. Attached Figure Description

[0022] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0023] Figure 1 This is a cross-sectional structural diagram of a magnetron sputtering hollow cathode according to an embodiment of the present invention;

[0024] Figure 2 This is a cross-sectional structural schematic diagram of another magnetron sputtering system according to an embodiment of the present invention;

[0025] Figure 3 This is a top view schematic diagram of a magnetron sputtering system according to the present invention;

[0026] Figure 4 This is a top view schematic diagram of another magnetron sputtering system according to the present invention.

[0027] Explanation of reference numerals in the attached figures:

[0028] 10. Shell; 11. Cathode support; 12. Cathode outer shell; 13. Hollow shaft;

[0029] 20. Cathode body;

[0030] 30. Offset block

[0031] 40. Magnetic circuit module;

[0032] 50. Target materials;

[0033] 60. Anode cover; 61. Plate body; 62. Annular flange;

[0034] 71. Inlet pipe; 72. Outlet pipe;

[0035] 80. Insulating blocks;

[0036] 100. Vacuum chamber; 101. Vacuum extraction port; 102. Gas inlet; 103. Worktable; 104. Sample to be coated; 105. Baffle assembly; 1051. Baffle; 1052. Support rod; 106. Flange structure.

[0037] 200. Magnetron sputtering hollow cathode

[0038] 300, Plasma; 301, O negative ion; 302, Ar positive ion; 303, Neutral target particle; 400, Magnetic field. Detailed Implementation

[0039] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0040] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0041] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0042] Exemplary embodiments according to this application will now be described in more detail with reference to the accompanying drawings. However, these exemplary embodiments may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. It should be understood that these embodiments are provided so that the disclosure of this application is thorough and complete, and that the concept of these exemplary embodiments is fully conveyed to those skilled in the art. In the drawings, for clarity, the thickness of layers and regions may be exaggerated, and the same reference numerals are used to denote the same devices, and therefore their description will be omitted.

[0043] In the conventional cathode sputtering process for fabricating a TCO layer, the main sources of sputtering damage are as follows: First, ionized O- ions, which can reach up to 400 eV under the influence of an electric field, are formed mainly depending on the target voltage and account for a relatively small proportion. Second, high-energy neutral gas particles (argon atoms), some of which are generated by the recombination of high-speed Ar+ ions with secondary electrons near the target, and some are generated by collisions between neutral argon atoms and accelerated argon ions, whose kinetic energy can also reach the discharge voltage value and account for a relatively large proportion. Third, sputtered neutral particles of the target material, with energy usually around 10 eV, depending on the binding energy of the target material. Fourth, secondary electrons in the plasma, after being accelerated by the electric field, fly towards the sample and dissipate energy on the sample surface, leading to an increase in the sample substrate temperature.

[0044] Plasma consists of electrons and positive ions (Ar). + O2 + Quasi-neutral ionized gas (with an overall equal number of positive and negative charges) consists of a small amount of unionized neutral gas molecules, etc.

[0045] The following is combined Figures 1 to 4 The following describes embodiments of the present invention.

[0046] like Figure 1 As shown, according to an embodiment of the present invention, a magnetron sputtering hollow cathode is provided, comprising: a housing 10 having a first receiving cavity; a cathode body 20 located within the first receiving cavity and having a second receiving cavity; an offset block 30 located at the bottom of the second receiving cavity, both the offset block 30 and the cathode body 20 being energized to generate an electric field; a magnetic circuit module 40 embedded inside the cathode body 20, having a ring structure and used to generate a magnetic field; and a target 50 located within the second receiving cavity, having a ring structure, the outer wall of the target 50 being fitted to the inner wall of the cathode body 20, the target 50 being located inside the magnetic circuit module 40, and the extension direction of the centerline of the target 50 having a preset angle A with the surface of the sample to be coated facing the housing 10.

[0047] In this embodiment, by setting the cathode body 20 as an inner ring structure and setting the offset block 30 at the bottom of the cathode body 20, the offset block 30 is connected to the positive electrode and the cathode body 20 is connected to the negative electrode, thereby forming an electric field between the offset block 30 and the cathode body 20. At the same time, a magnetic circuit module 40 is set inside the cathode body 20. The magnetic circuit module 40 has a ring structure and is used to generate a magnetic field, so that the electric field and the magnetic field work together. By setting the target material 50 on the inner wall of the cathode body 20, and the target material 50 is also set as a ring structure, the extension direction of the sputtering surface of the target material 50 is set at an angle to the extension direction of the surface of the sample to be coated toward the shell 10, so that the plasma generated by sputtering and the neutral particles of the target material gather in the inner ring space of the target material 50 under the action of the electric field and the magnetic field. At the same time, the offset block 30 generates an offset electric field. After applying a potential, it can guide the trajectory of charged ions and further constrain the plasma range, avoiding the neutral particles of the target material generated by sputtering from directly bombarding the sample to be coated and causing sample damage, thereby improving the sputtering efficiency.

[0048] In an optional embodiment, the preset angle A is 90°, that is, the extension direction of the sputtering surface of the target 50 is 90° with the extension direction of the surface of the sample to be coated toward the housing 10, and the extension direction of the center line of the target 50 is perpendicular to the sample to be coated.

[0049] In one embodiment, the top of the cathode body 20 is provided with an anode cover 60, the anode cover 60 having a plate 61 and an annular flange 62, the plate 61 covering the opening of the housing 10, the plate 61 having a through hole in the middle, the through hole being located in the second receiving cavity, the annular flange 62 being disposed at the through hole and extending along the interior of the cathode body 20, the through hole forming a sputtering outlet.

[0050] In this embodiment, the anode cover 60 is grounded, and the potential (positive potential) of the anode cover will affect the positive ions (such as Ar) in the plasma. + The electric field generates an attractive force, guiding the ions to accelerate along the electric field lines (from the anode cover to the cathode target), reducing the random scattering of ions and thus avoiding direct bombardment of the sample by ions, thereby improving sputtering efficiency.

[0051] In other embodiments, the anode cover 60 is connected to the positive terminal of the power supply.

[0052] In one embodiment, the cathode body 20 is provided with an annular groove that extends through the end face of the cathode body 20, and the magnetic circuit module 40 is disposed within the annular groove. This arrangement enables the generation of a magnetic field within the housing 10 to form a confinement force for plasma and neutral particles, while the placement of the magnetic circuit module 40 within the annular groove of the cathode body 20 allows for effective utilization of the internal space of the housing.

[0053] The magnetic circuit module 40 is typically composed of permanent magnets (such as neodymium iron boron and samarium cobalt magnets) and high-permeability materials (such as pure iron, permalloy, and silicon steel sheets). The magnetic circuit module 40 generates a magnetic field, which, under the influence of the electric field, applies a force perpendicular to both the velocity and the magnetic field direction to the moving electrons via the Lorentz force. This forces a change in their direction of motion, restricting their random diffusion and preventing them from rapidly escaping the ionization region or bombarding the sample.

[0054] In one embodiment, the bottom of the housing 10 is provided with a hollow shaft 13, the cathode body 20 is provided with a negative electrode interface, the offset block 30 is provided with a positive electrode interface, the negative electrode interface is connected to a negative cable, the positive electrode interface is connected to a positive cable, and the negative cable and the positive cable pass through the hollow shaft 13 respectively and are connected to an external negative power supply and an external positive power supply.

[0055] By setting a hollow shaft 13 at the bottom of the housing 10, and connecting the offset block 30 and the cathode body 20 to wires through the hollow shaft 13 to connect the positive and negative electrodes, an electric field is generated. This arrangement is compact and saves space.

[0056] In one embodiment, the cathode body 20 is provided with a cooling water passage. The bottom of the cathode body 20 is provided with a water inlet and a water outlet. One end of the water inlet is connected to one end of the water inlet pipe 71, and one end of the water outlet is connected to one end of the water outlet pipe 72. The other ends of the water inlet and the other ends of the water outlet are respectively connected to the cooling water passage. The other ends of the water inlet pipe 71 and the other ends of the water outlet pipe 72 pass through the hollow shaft 13 and are connected to an external circulating cooling water source.

[0057] By setting up a cooling water path, the temperature of the target material 50 during sputtering can be reduced, thus preventing the plasma from becoming unstable due to excessively high target material 50 temperature, which in turn affects the sputtering efficiency of neutral particles in the target material.

[0058] In one embodiment, the housing 10 includes: a cathode support 11, which has a disc-shaped structure and a hollow shaft 13 at its bottom; and a cathode outer shell 12, one end of which is connected to the outer periphery of the cathode support 11 and has an annular structure, and the other end of which is connected to the anode cover 60. This arrangement facilitates the assembly of the cathode support 11 and the cathode outer shell 12.

[0059] In one embodiment, the magnetron sputtering hollow cathode further includes an insulating block 80, which is disposed between the cathode body 20 and the housing 10, and the insulating block 80 has a ring structure.

[0060] The insulating block 80 physically separates the cathode 20 from the housing 10 through a ring structure, blocking the conductive path and ensuring that the negative high voltage of the cathode 20 can be stably maintained, providing the necessary electric field conditions for plasma discharge. The insulating block 80 is usually made of high-temperature resistant, high-insulation materials such as ceramics and polytetrafluoroethylene.

[0061] like Figure 2 As shown, according to an embodiment of the present invention, another aspect provides a magnetron sputtering system, including: a vacuum chamber 100, a vacuum port 101 and a gas inlet 102 provided on the side wall of the vacuum chamber 100, the gas inlet 102 being used to introduce a mixed gas, a magnetron sputtering hollow cathode, a portion of which is disposed within the vacuum chamber, the magnetron sputtering hollow cathode being the magnetron sputtering hollow cathode of the above embodiment.

[0062] By setting the cathode body 20 as an inner ring structure and setting the offset block 30 at the bottom of the cathode body 20, with the offset block 30 connected to the positive electrode and the cathode body 20 connected to the negative electrode, an electric field is formed between the offset block 30 and the cathode body 20. At the same time, a magnetic circuit module 40 is set inside the cathode body 20. The magnetic circuit module 40 has a ring structure and is used to generate a magnetic field, so that the electric field and the magnetic field work together. By setting the target material 50 on the inner wall of the cathode body 20, and setting the target material 50 as a ring structure, the extension direction of the sputtering surface of the target material 50 is set at an angle to the extension direction of the surface of the sample to be coated facing the shell 10. This allows the plasma generated by sputtering and the neutral particles of the target material to gather in the inner ring space of the target material 50 under the action of the electric field and the magnetic field. At the same time, the offset block 30 generates an offset electric field. After applying a potential, it can guide the trajectory of charged ions and further confine the plasma range, avoiding the neutral particles of the target material generated by sputtering from directly bombarding the sample to be coated and causing sample damage, thereby improving the sputtering efficiency.

[0063] In one embodiment, a worktable 103 is provided on the top of the vacuum chamber 100. The worktable 103 is rotatably arranged and is used to fix the sample 104 to be coated. The magnetron sputtering hollow cathode is located below the worktable 103 so that the sputtering outlet of the magnetron sputtering hollow cathode is correspondingly arranged with the position of the sample 104 to be coated. A baffle assembly 105 is provided on the top of the magnetron sputtering hollow cathode. The baffle assembly 105 is rotatably arranged and has a blocking position for blocking the sputtering outlet and a clearance position for avoiding the sputtering outlet.

[0064] The baffle assembly 105 includes a baffle 1051 and a support rod 1052. The support rod 1052 can drive the baffle 1051 to rotate, allowing the baffle 1051 to switch between a blocking position and a clearance position. Figure 4As shown, when the sample to be coated needs to be coated, i.e. during sputtering, the control baffle 1051 is in the avoidance position, such as... Figure 3 As shown, after the sputtering is completed, the control baffle 1051 is in the blocking position.

[0065] In one embodiment, a flange structure 106 is provided on the outside of the vacuum chamber 100, and the hollow shaft 13 of the magnetron sputtering hollow cathode is connected to the flange structure 106. The flange structure 106 is used to provide a support structure for the magnetron sputtering hollow cathode, ensuring the structural stability and reliability of the magnetron sputtering hollow cathode.

[0066] According to an embodiment of the present invention, another aspect provides a solar cell production line, including the magnetron sputtering system of the above embodiment.

[0067] Since the solar cell production line includes a magnetron sputtering system, which has the same effect as the magnetron sputtering system, it will not be elaborated on here.

[0068] Here, we take a perovskite photovoltaic cell as an application example and use this magnetron sputtering hollow cathode to sputter the transparent conductive oxide layer (TCO layer).

[0069] like Figure 2 As shown, firstly, the vacuum chamber 100 is evacuated to a vacuum pressure of 5 × 10⁻⁶ by connecting a vacuum pump unit to the external vacuum port 101. -4 Below Pa, the cathode cooling circulating water is turned on, and then a process gas pipeline is inserted through the gas inlet 1025 set on the vacuum chamber 100 to send in a certain amount of Ar / O2 mixed gas, maintaining the process pressure at about 0.5 Pa. The external power supply of the cathode is turned on, and a high negative potential is applied to the cathode body 20. At the same time, a positive potential is applied to the offset block 30, so that a high-intensity electric field is generated inside the cathode body 20. Under the constraint of the magnetic field 400 formed by the magnetic circuit module 40, the Ar / O2 mixed gas is ionized to generate plasma 300, which is concentrated in the inner ring space of the target material 50.

[0070] Before the external power supply is turned on, the baffle 1051 is in the closed state (e.g., Figure 3 As shown), after the power is turned on (i.e., plasma 300 is generated and ignited), the target material 50 is subjected to target burning or pre-sputtering for a certain period of time to remove contaminants from the surface of the target material 50 and stabilize the sputtering state. After pre-sputtering is completed, the cathode baffle 1051 is opened (as shown). Figure 4 As shown in the figure, the sputtering coating process begins.

[0071] During the sputtering process, ionized Ar positive ions 302 bombard the target material 50 at high speed under the action of an electric field, causing neutral target particles 303 to be sputtered from the surface of the target material 50. The neutral target particles 303 fly towards the sample 104 to be coated by scattering or collision, and form a dense film layer on the surface of the sample 104 to be coated, thus completing the sputtering coating.

[0072] This utility model adopts the above structure and has the following technical effects:

[0073] (1) The high-energy neutral gas particles generated by sputtering will not directly bombard the sample. Most of them remain in the plasma and will be ionized again. A small portion may fly towards the sample after being de-energized by collision, which effectively reduces the bombardment damage caused by high-energy neutral gas particles.

[0074] (2) Most of the neutral particles of the sputtered target material will not directly bombard the sample. They will only fly to the sample surface after scattering and collision, which also reduces the damage to the sample caused by the neutral particles of the target material.

[0075] (3) A bias block is set at the bottom of the cathode. Taking the TCO layer in the sputtered perovskite cell as an example, when a positive potential is applied to the bias block, the resulting deflection electric field further confines the plasma region to the inside of the hollow cathode. At the same time, it allows O- ions to flow to the bias block, thereby avoiding the bombardment of the sample by O- ions.

[0076] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0077] In addition to the above, it should be noted that the terms "one embodiment," "another embodiment," and "embodiment" used in this specification refer to specific features, structures, or characteristics described in connection with that embodiment, which are included in at least one embodiment described in the general description of this application. The appearance of the same expression in multiple places in the specification does not necessarily refer to the same embodiment. Furthermore, when a specific feature, structure, or characteristic is described in connection with any embodiment, the intention is to suggest that implementing such a feature, structure, or characteristic in conjunction with other embodiments also falls within the scope of this utility model.

[0078] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0079] The above description is merely a preferred embodiment of this utility model and is not intended to limit the utility model. Various modifications and variations can be made to this utility model by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. A magnetron sputter hollow cathode, characterized in that include: A housing (10) having a first receiving cavity; A cathode body (20) is located within the first receiving cavity, and the cathode body (20) has a second receiving cavity; Displacement block (30), the displacement block (30) is located at the bottom of the second receiving cavity, the displacement block (30) and the cathode body (20) are both energized to generate an electric field; A magnetic circuit module (40) is embedded inside the cathode body (20). The magnetic circuit module (40) has a ring structure and is used to generate a magnetic field. The target (50) is located in the second accommodating cavity. The target (50) has a ring structure. The outer wall of the target (50) is attached to the inner wall of the cathode body (20). The target (50) is located inside the magnetic circuit module (40). The extension direction of the center line of the target (50) has a preset angle A with the surface of the sample to be coated facing the housing (10).

2. The magnetron sputtering hollow cathode according to claim 1, characterized in that, The cathode body (20) is provided with an anode cover (60) on top. The anode cover (60) has a plate (61) and an annular flange (62). The plate (61) covers the opening of the housing (10). A through hole is provided in the middle of the plate (61). The through hole is located in the second receiving cavity. The annular flange (62) is provided at the through hole and extends along the interior of the cathode body (20). The through hole forms a sputtering outlet.

3. The magnetron sputtering hollow cathode according to claim 1 or 2, characterized in that, The cathode body (20) is provided with an annular groove, which is provided through the end face of the cathode body (20), and the magnetic circuit module (40) is provided in the annular groove.

4. The magnetron sputtering hollow cathode of claim 2, wherein, The bottom of the housing (10) is provided with a hollow shaft (13), the cathode body (20) is provided with a negative electrode interface, the offset block (30) is provided with a positive electrode interface, the negative electrode interface is connected to a negative cable, the positive electrode interface is connected to a positive cable, the negative cable and the positive cable pass through the hollow shaft (13) respectively and are connected to an external negative power supply and an external positive power supply.

5. The magnetron sputter hollow cathode of claim 4, wherein, The cathode body (20) is provided with a cooling water passage. The bottom of the cathode body (20) is provided with a water inlet and a water outlet. One end of the water inlet is connected to one end of the water inlet pipe (71), and one end of the water outlet is connected to one end of the water outlet pipe (72). The other end of the water inlet and the other end of the water outlet are respectively connected to the cooling water passage. The other end of the water inlet pipe (71) and the other end of the water outlet pipe (72) pass through the hollow shaft (13) and are connected to an external circulating cooling water source.

6. The magnetron sputtering hollow cathode of claim 4, wherein, The housing (10) includes: A cathode support (11) is a disc-shaped structure, and the bottom of the cathode support (11) is provided with the hollow shaft (13). The cathode housing (12) has one end connected to the outer periphery of the cathode support (11), the cathode housing (12) has an annular structure, and the other end of the cathode housing (12) is connected to the anode cover (60).

7. The magnetron sputtering hollow cathode of claim 1, wherein, The magnetron sputtering hollow cathode also includes: An insulating block (80) is disposed between the cathode body (20) and the housing (10), and the insulating block (80) has a ring structure.

8. A magnetron sputtering system, characterized in that include: A vacuum chamber (100) has a vacuum port (101) and a gas inlet (102) on its side wall. The gas inlet (102) is used to introduce a mixed gas. A magnetron sputtering hollow cathode, a portion of which is disposed within the vacuum chamber, wherein the magnetron sputtering hollow cathode is the magnetron sputtering hollow cathode as described in any one of claims 1-7.

9. The magnetron sputtering system of claim 8, wherein, The top of the vacuum chamber (100) is provided with a worktable (103), which is rotatably arranged. The worktable (103) is used to fix the sample (104) to be coated. The magnetron sputtering hollow cathode is located below the worktable (103) so that the sputtering outlet of the magnetron sputtering hollow cathode is positioned corresponding to the position of the sample (104) to be coated. The top of the magnetron sputtering hollow cathode is provided with a baffle assembly (105), which is rotatably arranged. The baffle assembly (105) has a blocking position for blocking the sputtering outlet and a clearance position for avoiding the sputtering outlet.

10. A solar cell production line, characterized by, Includes the magnetron sputtering system as described in claim 8 or 9.

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