A device for growing and purifying indium phosphide crystals
By designing an indium phosphide crystal growth and impurity removal device, and using an electric actuator to drive the rotation and movement of the support and fixed container, the problem of uneven corrosion on the surface of indium phosphide crystals was solved, achieving more uniform zinc diffusion control and a stable corrosion process.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- ZHONGDI SEMICONDUCTOR TECHNOLOGY (JIANGSU) CO LTD
- Filing Date
- 2025-04-28
- Publication Date
- 2026-06-19
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Figure CN224378297U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of indium phosphide crystal preparation, specifically an indium phosphide crystal growth and impurity removal device. Background Technology
[0002] Zinc (Zn) is a common p-type dopant in group III-V materials and has important applications in the fabrication of devices such as indium phosphide (InP)-based photodetectors and lasers.
[0003] In the current technology, in order to control the depth of Zn diffusion during the indium zinc phosphide doping process, a ZnSe layer is grown in the indium phosphide crystal. In the subsequent process, it is necessary to remove surface impurities by wet etching. The etching solution is a system obtained by mixing phosphoric acid (mass percentage > 85%) and hydrogen peroxide aqueous solution (mass percentage 30%) in a volume ratio of approximately 3:2.
[0004] However, during use, after the indium phosphide crystal is placed into the etching tank filled with etching solution, the indium phosphide crystal cannot adjust its position, resulting in poor uniformity of etching on the surface of the indium phosphide crystal. Therefore, an indium phosphide crystal growth and impurity removal device is proposed to address the above problems. Utility Model Content
[0005] In order to overcome the shortcomings of the prior art and solve at least one of the technical problems mentioned in the background art, this utility model proposes an indium phosphide crystal growth and impurity removal device.
[0006] The technical solution adopted by this utility model to solve its technical problem is as follows: The indium phosphide crystal growth and impurity removal device of this utility model includes a worktable, and an etching tank is installed inside the worktable; a support is provided on the top of the worktable, and a pair of support arms are fixedly connected to the bottom of the support; a rotating shaft is rotatably connected to the bottom end of the support arms; a fixed container is installed on the rotating shaft; a crank seat is fixedly connected to the end of the rotating shaft away from the fixed container; a rod is hinged to the crank seat; a first electric actuator is fixedly connected to the top end of the rod; the first electric actuator is rotatably connected to the support; and the fixed container is located inside the etching tank.
[0007] Preferably, a second electric actuator is fixedly connected to both sides of the workbench, the output end of the second electric actuator is fixedly connected to the bracket, and the second electric actuator can move the bracket up and down.
[0008] Preferably, two pairs of columns are fixedly connected to the top of the workbench, and the two pairs of columns are located on both sides of the top of the workbench. Sliding sleeves are fixedly connected to the support and the corresponding positions of the columns, and the columns pass through the sliding sleeves and are slidably connected to them.
[0009] Preferably, the fixed container includes a fixed cylinder with an opening at the top. A cover cylinder is detachably connected to the opening of the fixed cylinder by bolts. Both the fixed cylinder and the cover cylinder have multiple through holes.
[0010] Preferably, the fixed cylinder has a fixed plate inside, and a spring piece is fixedly connected to the side of the fixed plate. The end of the spring piece is fixedly connected to the inner wall of the fixed cylinder.
[0011] Preferably, the top of the fixing plate is provided with an inclined surface, the side of the fixing plate is fixedly connected to an isolation sleeve, the end of the isolation sleeve is fixedly connected to the inner wall of the fixing cylinder, and the spring piece is located inside the isolation sleeve.
[0012] The advantages of this utility model are:
[0013] 1. This utility model comprises a workbench, a support, a support arm, a rotating shaft, a fixed container, a crank seat, a first electric actuator, and a rod body. In use, indium phosphide crystals are placed inside the fixed container, and a corrosion solution is added to the corrosion tank. A support is installed above the workbench, and the rotating shaft and the fixed container are connected to the support via the support arm. The rod body is then moved by the first electric actuator. The bottom end of the rod body is hinged to a crank seat, and the crank shaft and the rotating shaft are fixedly connected, thereby causing the fixed container to rotate at a certain angle, which in turn causes the indium phosphide crystals to roll, thus facilitating the improvement of the uniformity of the corrosion removal of the ZnSe layer of indium phosphide crystals.
[0014] 2. This utility model, by setting a second electric actuator, is fixedly connected to the upper part of the worktable. The second electric actuator drives the support to move upward, thereby driving the fixed container to move upward, so as to remove the indium phosphide crystal from the inside of the etching tank. By setting the column and the sliding sleeve, the stability of the support moving up and down can be improved and the shaking of the support can be reduced. Attached Figure Description
[0015] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0016] Figure 1 This is a schematic diagram of the structure of this utility model;
[0017] Figure 2 This is a schematic diagram of the corrosion tank structure of this utility model;
[0018] Figure 3 This is a schematic diagram of the support structure of this utility model;
[0019] Figure 4 This is a schematic diagram of the fixed cylinder and cover cylinder structure of this utility model;
[0020] Figure 5 This is a structural schematic diagram of the fixing plate of this utility model.
[0021] In the diagram: 11. Workbench; 12. Etching tank; 13. Support; 14. Support arm; 15. Shaft; 16. Crank seat; 17. Push rod; 18. First electric push rod; 2. Second electric push rod; 31. Column; 32. Sliding sleeve; 41. Fixed cylinder; 42. Cover cylinder; 51. Fixed plate; 52. Spring; 61. Isolation sleeve; 62. Inclined surface. Detailed Implementation
[0022] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present utility model.
[0023] Specific implementation examples are given below.
[0024] Please see Figure 1-5 As shown, an indium phosphide crystal growth and impurity removal device includes a worktable 11, with an etching tank 12 installed inside the worktable 11; a support 13 is provided on the top of the worktable 11, and a pair of support arms 14 are fixedly connected to the bottom of the support 13. A rotating shaft 15 is rotatably connected to the bottom end of each support arm 14, and a fixed container is mounted on the rotating shaft 15. A crank seat 16 is fixedly connected to the end of the rotating shaft 15 away from the fixed container, and a rod 17 is hinged to the crank seat 16. A first electric actuator 18 is fixedly connected to the top end of the rod 17. The electric actuator 18 and the bracket 13 are rotatably connected, and the fixed container is located inside the corrosion tank 12; a second electric actuator 2 is fixedly connected to both sides of the workbench 11, and the output end of the second electric actuator 2 is fixedly connected to the bracket 13. The second electric actuator 2 can move the bracket 13 up and down; two pairs of columns 31 are fixedly connected to the top of the workbench 11, and the two pairs of columns 31 are located on both sides of the top of the workbench 11. A sliding sleeve 32 is fixedly connected to the bracket 13 at the corresponding position of the column 31, and the column 31 passes through the sliding sleeve 32 and is slidably connected to it;
[0025] In use, indium phosphide crystals are placed inside a fixed container. The etching tank 12 contains an etching solution. A support 13 is mounted above the worktable 11. A rotating shaft 15 and the fixed container are connected to the support 13 via a support arm 14. A first electric actuator 18 pushes the rod 17 to move it. A crank seat 16 is hinged to the bottom of the rod 17, and the crank shaft and rotating shaft 15 are fixedly connected, causing the fixed container to rotate at a certain angle, thus causing the indium phosphide crystals to roll. This facilitates the improvement of the uniformity of ZnSe layer etching removal. A second electric actuator 2 is fixed to the worktable 11. The second electric actuator 2 moves the support 13 upwards, thereby moving the fixed container upwards and removing the indium phosphide crystals from the etching tank 12. The support 13 is stabilized by a column 31 and a sliding sleeve 32, reducing the likelihood of the support 13 wobbling.
[0026] Furthermore, such as Figure 1-5 As shown, the fixed container includes a fixed cylinder 41, the top of the fixed cylinder 41 has an opening, and a cover cylinder 42 is detachably connected to the opening of the fixed cylinder 41 by bolts. Both the fixed cylinder 41 and the cover cylinder 42 have multiple through holes.
[0027] In use, the fixed container consists of a fixed cylinder 41 and a cover cylinder 42. An opening is provided on the top of the fixed cylinder 41, through which the indium phosphide crystal is inserted. The fixed cylinder 41 and the cover cylinder 42 are then fixedly connected by bolts. The internal cavity of the fixed cylinder 41 is larger than the indium phosphide crystal, so the indium phosphide crystal can rotate inside the fixed cylinder 41 after the fixed cylinder 41 is rotated.
[0028] Furthermore, such as Figure 1-5 As shown, the fixed cylinder 41 has a fixed plate 51 inside, and a spring piece 52 is fixedly connected to the side of the fixed plate 51. The end of the spring piece 52 is fixedly connected to the inner wall of the fixed cylinder 41. The top of the fixed plate 51 has an inclined surface 62, and an isolation sleeve 61 is fixedly connected to the side of the fixed plate 51. The end of the isolation sleeve 61 is fixedly connected to the inner wall of the fixed cylinder 41, and the spring piece 52 is located inside the isolation sleeve 61.
[0029] In use, in order to facilitate the placement of indium phosphide crystals, the length of the fixing cylinder 41 is greater than that of the indium phosphide crystals. However, this length difference can easily cause the indium phosphide crystals to move around. Therefore, a spring piece 52 is fixedly attached inside the fixing cylinder 41, and a fixing plate 51 is connected to the end of the spring piece 52. The fixing plate 51 limits and fixes the indium phosphide crystals from the side, thereby reducing the movement of the indium phosphide crystals inside the fixing cylinder 41. The inclined surface 62 above the fixing plate 51 is used to facilitate the placement of the indium phosphide crystals. An isolation sleeve 61 is provided to cover the outside of the spring piece 52, which serves to isolate and protect the spring piece 52 from the outside.
[0030] Furthermore, such as Figure 1-5 As shown, the fixed cylinder 41, cover cylinder 42, rotating shaft 15, crank seat 16 and rod body 17 are all made of polytetrafluoroethylene.
[0031] Working principle: In use, indium phosphide crystals are placed inside a fixed container. The corrosion tank 12 is filled with a corrosion solution. A support 13 is installed above the worktable 11. A rotating shaft 15 and a fixed container are connected to the support 13 via a support arm 14. The first electric push rod 18 pushes the rod body 17 to move. A crank seat 16 is hinged to the bottom end of the rod body 17. The crank shaft and the rotating shaft 15 are fixedly connected, thereby driving the fixed container to rotate at a certain angle, which in turn causes the indium phosphide crystals to roll, thereby improving the uniformity of the corrosion removal of the ZnSe layer of indium phosphide crystals.
[0032] A second electric actuator 2 is fixedly connected to the upper part of the workbench 11. The second electric actuator 2 drives the support 13 to move upward, which in turn drives the fixed container to move upward, thereby removing the indium phosphide crystal from the inside of the etching tank 12. By relying on the setting of the column 31 and the sliding sleeve 32, the stability of the support 13 in moving up and down can be improved and the shaking of the support 13 can be reduced. In use, the fixed container is composed of a fixed cylinder 41 and a cover cylinder 42. The fixed cylinder 41 has an opening at the top, through which the indium phosphide crystal is put in. Then, the fixed cylinder 41 and the cover cylinder 42 are fixedly connected by bolts. The internal cavity of the fixed cylinder 41 is larger than the indium phosphide crystal, so that when the fixed cylinder 41 rotates, the indium phosphide crystal can be removed. The indium phosphide crystal can rotate inside the fixed cylinder 41. During use, in order to facilitate the placement of the indium phosphide crystal, the length of the fixed cylinder 41 is greater than that of the indium phosphide crystal. However, this length change can easily cause the indium phosphide crystal to move around. The spring piece 52 is fixed inside the fixed cylinder 41, and the end of the spring piece 52 is connected to the fixing plate 51. The fixing plate 51 limits and fixes the indium phosphide crystal from the side, thereby reducing the movement of the indium phosphide crystal inside the fixed cylinder 41. The inclined surface 62 above the fixing plate 51 is used to facilitate the placement of the indium phosphide crystal. An isolation sleeve 61 is provided to cover the outside of the spring piece 52, which serves to isolate and protect the spring piece 52 from the outside.
[0033] In the description of this specification, references to terms such as "an embodiment," "example," "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0034] The foregoing has shown and described the basic principles, main features, and advantages of this utility model. Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of this utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed utility model.
Claims
1. An indium phosphide crystal growth impurity removal device, comprising a workbench (11), an etching tank (12) is installed inside the workbench (11); characterized in that: The top of the workbench (11) is provided with a bracket (13), and a pair of support arms (14) are fixedly connected to the bottom of the bracket (13). The bottom end of the support arm (14) is rotatably connected to a rotating shaft (15). A fixed container is installed on the rotating shaft (15). A crank seat (16) is fixedly connected to the end of the rotating shaft (15) away from the fixed container. A rod body (17) is hinged to the crank seat (16). A first electric actuator (18) is fixedly connected to the top of the rod body (17). The first electric actuator (18) and the bracket (13) are rotatably connected. The fixed container is located inside the corrosion tank (12).
2. The apparatus for growing and purifying indium phosphide crystals according to claim 1, wherein: The workbench (11) is fixedly connected to two sides with a second electric actuator (2). The output end of the second electric actuator (2) is fixedly connected to the bracket (13). The second electric actuator (2) can move the bracket (13) up and down.
3. The indium phosphide crystal growth impurity removal apparatus according to claim 2, characterized in that: Two pairs of columns (31) are fixed to the top of the workbench (11). The two pairs of columns (31) are located on both sides of the top of the workbench (11). Sliding sleeves (32) are fixed to the bracket (13) at the corresponding positions of the columns (31). The columns (31) pass through the sliding sleeves (32) and are slidably connected to them.
4. The indium phosphide crystal growth impurity removal apparatus according to claim 3, characterized in that: The fixed container includes a fixed cylinder (41), the top of which has an opening, and a cover cylinder (42) is detachably connected to the opening of the fixed cylinder (41) by bolts. Both the fixed cylinder (41) and the cover cylinder (42) have multiple through holes.
5. The indium phosphide crystal growth impurity removal apparatus according to claim 4, characterized in that: The fixed cylinder (41) is provided with a fixed plate (51) inside. A spring piece (52) is fixedly connected to the side of the fixed plate (51). The end of the spring piece (52) is fixedly connected to the inner wall of the fixed cylinder (41).
6. The indium phosphide crystal growth impurity removal apparatus according to claim 5, characterized in that: The top of the fixing plate (51) is provided with a slope (62), and the side of the fixing plate (51) is fixedly connected with an isolation sleeve (61). The end of the isolation sleeve (61) is fixedly connected to the inner wall of the fixing cylinder (41), and the spring piece (52) is located inside the isolation sleeve (61).