A MEMS hall sensor package structure integrating stress compensation and temperature calibration
By integrating stress compensation and temperature calibration into the MEMS Hall sensor packaging structure, the accuracy and sensitivity issues of Hall current sensors during the packaging process are solved, achieving a sensor design with high precision, wide bandwidth, and low cost.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- WEIHAI JINGXUN CHANGTONG ELECTRONIC TECH CO LTD
- Filing Date
- 2025-06-11
- Publication Date
- 2026-06-19
AI Technical Summary
Traditional Hall current sensors are susceptible to mechanical stress during packaging, leading to magnetic sensitivity drift and residual thermal drift. Furthermore, existing technologies struggle to achieve high accuracy and a wide sensitivity range, resulting in high costs and low integration.
The MEMS Hall sensor packaging structure, which integrates stress compensation and temperature calibration, includes a substrate, a pressure sensor, a temperature sensor, and a stress sensor. It is encapsulated in one piece by epoxy resin molding to achieve real-time detection and compensation of pressure, temperature, and stress.
This improves the reliability and adaptability of Hall sensors, reduces sensitivity drift, achieves high precision and wide bandwidth, and lowers costs.
Smart Images
Figure CN224383328U_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of microelectromechanical systems (MEMS) sensor technology, and in particular relates to a MEMS Hall sensor packaging structure that integrates stress compensation and temperature calibration. Background Technology
[0002] Traditional Hall current sensors are susceptible to mechanical stress during the packaging process, which can lead to magnetic sensitivity drift. Temperature changes cause thermomechanical stress and parasitic effects, resulting in residual thermal drift (up to 2.5% without compensation). Traditional gain adjustment methods rely on preset mapping relationships, which have poor real-time performance and insufficient accuracy.
[0003] While closed-loop compensation is employed, the bandwidth is only 120kHz, the sensitivity range is narrow (6-12mV / mT), and the drift reaches ±5%. Traditional light intensity measurement schemes mostly use a microcontroller to measure the light intensity at multiple points in the environment and calculate the average value. In mass production, the use of a microcontroller inevitably leads to increased costs. Patent CN104655271A discloses a new type of light intensity measurement circuit. Although this circuit can measure light intensity information more accurately, its circuit structure is relatively complex and the measurement accuracy is limited. Summary of the Invention
[0004] The purpose of this application is to provide a MEMS Hall sensor packaging structure that integrates stress compensation and temperature calibration, so as to solve the technical problems of reduced accuracy and low integration of Hall current sensors in the prior art during the packaging process.
[0005] To achieve the above objectives, the technical solution adopted in this application is: to provide a MEMS Hall sensor packaging structure integrating stress compensation and temperature calibration, including a substrate, a pressure sensor disposed on the substrate, a temperature sensor and a Hall disk disposed on the pressure sensor, and a stress sensor disposed on the Hall disk.
[0006] In one embodiment,
[0007] The temperature sensor is a two-dimensional strip temperature sensor, and there are two temperature sensors, which are arranged in a cross shape on the pressure sensor.
[0008] In one embodiment,
[0009] There are four Hall effect sensors, symmetrically arranged at the four corners of the pressure sensor.
[0010] In one embodiment,
[0011] Each Hall plate is equipped with four stress sensors.
[0012] In one embodiment,
[0013] Each of the four Hall effect panels contains a Hall sensor.
[0014] In one embodiment,
[0015] The encapsulation structure uses epoxy resin molding.
[0016] In one embodiment,
[0017] The pressure sensor is recessed in the middle, and the height of the temperature sensor is flush with the outer edge of the pressure sensor.
[0018] In one embodiment,
[0019] The four Hall sensors are connected by a four-phase rotating current.
[0020] This application provides a MEMS Hall sensor packaging structure that integrates stress compensation and temperature calibration. This application integrates a pressure sensor, a temperature sensor, a stress sensor, and a Hall current sensor into a single package, achieving high integration and smaller size. This structure can adapt to different packaging stresses, has high reliability and strong adaptability. Stress-related sensitivity drift is compensated by the stress sensor, reducing residual thermal drift and achieving a wide sensitivity range, high bandwidth, and high accuracy. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0022] Figure 1 This is a schematic diagram of the packaging structure;
[0023] Figure 2 This is the system architecture for a Hall current sensor.
[0024] Explanation of symbols in the diagram:
[0025] 1. Substrate; 2. Pressure sensor; 3. Temperature sensor; 4. Hall effect sensor; 5. Stress sensor. Detailed Implementation
[0026] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, this application will be further described in detail. It should be understood that the specific embodiments described herein are only for explaining this application and are not intended to limit this application.
[0027] In one embodiment, a MEMS Hall sensor packaging structure integrating stress compensation and temperature calibration, such as Figure 1-2 As shown, the device includes a substrate 1, on which a pressure sensor 2 is mounted. The pressure sensor 2 has a temperature sensor 3 and a Hall effect sensor disk 4 mounted on it. Stress sensors 5 are mounted on the Hall effect sensor disk 4. The temperature sensor 3 is a strip-shaped two-dimensional temperature sensor; there are two temperature sensors 3 arranged in a cross shape on the pressure sensor 2. There are four Hall effect sensors 4, symmetrically arranged at the four corners of the pressure sensor 2. Each Hall effect sensor 4 has four stress sensors 5 mounted on it. Each of the four Hall effect sensors 4 contains a Hall effect sensor. The encapsulation structure uses epoxy resin molding. The pressure sensor 2 has a recessed center, and the height of the temperature sensor 3 is flush with the outer edge of the pressure sensor 2. The four Hall effect sensors are connected by a four-phase rotating current.
[0028] Specifically, an integrated stress sensor 5 and a bar-shaped temperature sensor 3 are used to detect the temperature of the substrate 1 and the ambient temperature in real time. The stress sensor 5 is connected to the interior of the substrate 1 via gold wire bonding and is symmetrically distributed around the Hall disk 4 to ensure consistent stress response. The cross-shaped bar-shaped temperature sensor 3 can detect the temperature of the Hall disk 4 in two dimensions. The parameters of the stress sensor 5 are 4×200μm. 2 Piezoresistive, bridge voltage Vbias is 4.5V.
[0029] This application provides a MEMS Hall sensor packaging structure integrating stress compensation and temperature calibration, including a substrate, a pressure sensor mounted on the substrate, a temperature sensor and a Hall disk mounted on the pressure sensor, and a stress sensor mounted on the Hall disk. This application integrates the pressure sensor, temperature sensor, stress sensor and Hall current sensor into a single package, achieving high integration and smaller size. This structure can adapt to different packaging stresses, has high reliability and strong adaptability. Stress-related sensitivity drift is compensated by the stress sensor, reducing residual thermal drift and achieving a wide sensitivity range, high bandwidth and high accuracy.
[0030] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.
[0031] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. A MEMS Hall sensor package structure integrating stress compensation and temperature calibration, comprising a substrate, characterized in that, A pressure sensor is provided on the substrate, a temperature sensor and a Hall effect sensor are provided on the pressure sensor, and a stress sensor is provided on the Hall effect sensor.
2. The MEMS Hall sensor package structure integrated with stress compensation and temperature calibration according to claim 1, characterized in that, The temperature sensor is a strip-shaped two-dimensional temperature sensor, and there are two temperature sensors, which are arranged in a cross shape on the pressure sensor.
3. The MEMS Hall sensor packaging structure integrating stress compensation and temperature calibration according to claim 1, characterized in that, The number of Hall effect discs is four, symmetrically arranged at the four corners of the pressure sensor.
4. The MEMS Hall sensor packaging structure integrating stress compensation and temperature calibration according to claim 3, characterized in that, Each of the Hall effect sensors is equipped with four stress sensors.
5. The MEMS Hall sensor packaging structure integrating stress compensation and temperature calibration according to claim 3, characterized in that, Each of the four Hall effect panels is equipped with a Hall sensor.
6. The MEMS Hall sensor packaging structure integrating stress compensation and temperature calibration according to claim 1, characterized in that, The encapsulation structure uses epoxy resin molding.
7. The MEMS Hall sensor packaging structure integrating stress compensation and temperature calibration according to claim 1, characterized in that, The pressure sensor has a recessed center, and the height of the temperature sensor is flush with the outer edge of the pressure sensor.
8. The MEMS Hall sensor packaging structure integrating stress compensation and temperature calibration according to claim 5, characterized in that, The four Hall sensors are connected by a four-phase rotating current.