A gas mixing pipe for improving the gas mixing uniformity of a semiconductor high-temperature furnace

Abstract

The utility model belongs to the technical field of semiconductor manufacturing equipment, disclose a kind of promoting the gas mixing pipe of semiconductor high temperature furnace gas mixing uniformity, it includes three-way pipe (1) and connector (2);Three-way pipe (1) includes gas main pipeline (1-1), gas branch pipeline ① (1-2) and gas branch pipeline ② (1-3), the both ends of gas main pipeline (1-1) are connected with gas inlet pipe (3) and high temperature furnace pipe (4) respectively, play the role of the mixed gas by gas inlet pipe (3) is guided into, after being mixed sufficiently, to the high temperature furnace pipe (4) export again;Gas main pipeline (1-1) is connected with the front end of gas branch pipeline ① (1-2) and the front end of gas branch pipeline ② (1-3) from gas inlet direction to gas outlet direction in order, the rear end of gas branch pipeline ① (1-2) and the rear end of gas branch pipeline ② (1-3) are communicated by connector (2).The utility model can promote gas mixing efficiency and gas mixing uniformity.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor manufacturing equipment technology, and relates to a gas mixing pipe used in a high-temperature semiconductor furnace, which aims to improve the gas mixing uniformity by improving the gas mixing structure. Background Technology

[0002] In high-temperature semiconductor furnaces, multiple gases are often introduced simultaneously into the furnace tube to perform processes such as epitaxial growth, diffusion doping, and dielectric growth of semiconductor materials. During these high-temperature processes, the uniform mixing of different gases is crucial to ensuring the uniformity of the high-temperature processing of semiconductor wafers.

[0003] Traditional gas mixing devices often rely on the mutual diffusion between gases, which can lead to uneven gas distribution and low mixing efficiency. This results in inconsistent performance within the semiconductor wafers after high-temperature processing, affecting product quality. Therefore, it is necessary to redesign the structure of the gas mixing device in a high-temperature semiconductor furnace to improve the mixing uniformity and efficiency of the gas before it enters the furnace tube. Utility Model Content

[0004] (I) Purpose of the utility model

[0005] The purpose of this invention is to provide a gas mixing pipe that improves the uniformity of gas mixing in a high-temperature semiconductor furnace. By splitting and recombining the gas, the convection between gases is accelerated, thereby improving the uniformity and efficiency of gas mixing.

[0006] (II) Technical Solution

[0007] To solve the above-mentioned technical problems, this utility model provides a gas mixing pipe for improving the uniformity of gas mixing in a high-temperature semiconductor furnace, which includes a three-way pipe 1 and a connector 2. The three-way pipe 1 includes a main gas pipeline 1-1, a gas branch pipeline ①1-2, and a gas branch pipeline ②1-3. The two ends of the main gas pipeline 1-1 are respectively connected to the inlet pipe 3 and the high-temperature furnace tube 4, which serves to introduce the gas to be mixed through the inlet pipe 3, mix it thoroughly, and then discharge it to the high-temperature furnace tube 4. The main gas pipeline 1-1 is connected sequentially from the inlet direction to the outlet direction to the front end of the gas branch pipeline ①1-2 and the front end of the gas branch pipeline ②1-3. The rear end of the gas branch pipeline ①1-2 and the rear end of the gas branch pipeline ②1-3 are connected through the connector 2.

[0008] Furthermore, the gas main pipeline 1-1 is provided with a spherical ground joint ①1-1-1 at the inlet end for connection with the inlet pipe 3; the gas main pipeline 1-1 is provided with a bowl-shaped ground joint ①1-1-2 at the outlet end for connection with the high-temperature furnace tube 4.

[0009] Furthermore, the main gas pipeline 1-1 is provided with branches ①1-1-3 and ②1-1-4 from the inlet direction to the outlet direction, respectively, for connecting the gas branch pipeline ①1-2 and the gas branch pipeline ②1-3.

[0010] Furthermore, a 45° bend ①1-2-1 is provided in the middle of the gas branch pipe ①1-2, and a 45° bend ③1-3-1 is provided in the middle of the gas branch pipe ②1-3. The directions of the rear half of the gas branch pipe ①1-2 and the gas branch pipe ②1-3 are adjusted to be parallel by the 45° bend ①1-2-1 and the 45° bend ③1-3-1.

[0011] Furthermore, the connection direction of the three-way pipe 1 to the connector 2 and to the high-temperature furnace pipe 4 forms a 45° angle.

[0012] Furthermore, a 45° bend ②1-2-2 is provided at the rear end of the gas branch pipe ①1-2, and a 45° bend ④1-3-2 is provided at the rear end of the gas branch pipe ②1-3. The 45° bend ②1-2-2 and the 45° bend ④1-3-2 respectively adjust the rear ends of the gas branch pipe ①1-2 and the gas branch pipe ②1-3 to form a 45° angle with the direction of the main gas pipeline 1-1.

[0013] Furthermore, the gas branch pipe ①1-2 is provided with a spherical ground joint interface ②1-2-3 at its tail end, and the gas branch pipe ②1-3 is provided with a spherical ground joint interface ③1-3-3 at its tail end. The spherical ground joint interface ②1-2-3 and the spherical ground joint interface ③1-3-3 are used to connect with the connector 2.

[0014] Furthermore, the main structure of the connector 2 is an arc-shaped bend 2-1, with a bowl-shaped ground joint ②2-2 and a bowl-shaped ground joint ③2-3 respectively provided at both ends of the arc-shaped bend 2-1. The bowl-shaped ground joint ②2-2 is used to connect with the ball-shaped ground joint interface ②1-2-3 of the tee pipe 1, and the bowl-shaped ground joint ③2-3 is used to connect with the ball-shaped ground joint interface ③1-3-3.

[0015] Furthermore, the bowl-shaped ground joint ②2-2 and the spherical ground joint interface ②1-2-3, and the bowl-shaped ground joint ③2-3 and the spherical ground joint interface ③1-3-3 are all sealed together.

[0016] Furthermore, the gas branch pipe ①1-2 is located above the main gas pipe 1-1. The gas to be mixed is split at the branch ①1-1-3, with the lighter gas entering the gas branch pipe ①1-2 upwards and the remaining heavier gas continuing forward along the main gas pipe 1-1.

[0017] Furthermore, the main gas pipeline 1-1 forms an acute angle of 45° with the gas branch pipeline ①1-2, and the main gas pipeline 1-1 forms an obtuse angle of 135° with the gas branch pipeline ②1-3.

[0018] Furthermore, the three-way pipe 1 and the connector 2 are made of the same high-purity quartz material as the high-temperature furnace tube.

[0019] (III) Beneficial Effects

[0020] The gas mixing pipe provided by the above technical solution for improving the gas mixing uniformity of semiconductor high-temperature furnace has the following beneficial effects:

[0021] (1) The mixing pipe structure provided by this utility model is divided into two parts: a three-way pipe and a connector. Both parts have the advantages of simple structure and easy processing.

[0022] (2) The gas mixing pipe provided by this utility model diverts the light gas at the upper part of the main pipeline and then merges it into the lower part of the main pipeline, thereby reversing the distribution of heavy gas and light gas in the main pipeline, improving the gas mixing efficiency and gas mixing uniformity.

[0023] (3) The gas main pipeline and gas branch pipeline ① of the gas mixing pipe provided by this utility model are at an acute angle of 45°, which improves the gas diversion efficiency.

[0024] (4) The gas main pipeline and gas branch pipeline ② of the gas mixing pipe provided by this utility model are at an acute angle of 45°, so that the direction of light gas inflow is at an obtuse angle of 135°, which further improves the gas mixing efficiency and gas mixing uniformity.

[0025] (5) The gas mixing pipe provided by this utility model has the characteristics of strong compatibility and can be attached to the gas inlet end of any high-temperature furnace. Attached Figure Description

[0026] Figure 1 The left view of the mixing pipe provided in the embodiment of this utility model (including a partial schematic diagram of the matching air inlet pipe and the high-temperature furnace tube).

[0027] Figure 2 for Figure 1 Left view of the center tee pipe.

[0028] Figure 3 for Figure 1 Top view.

[0029] Figure 4 for Figure 1 Left view of the connector.

[0030] Figure 5 This is a schematic diagram illustrating the working principle of the mixing pipe provided in an embodiment of this utility model.

[0031] In the diagram, 1: T-junction; 1-1: Main gas pipeline; 1-1-1: Spherical ground joint ①; 1-1-2: Bowl-shaped ground joint ①; 1-1-3: Branch ①; 1-1-4: Branch ②; 1-2: Gas branch pipeline ①; 1-2-1: 45° bend ①; 1-2-2: 45° bend ②; 1-2-3: Spherical ground joint ②; 1-3: Gas branch pipeline ②; 1-3-1: 45° bend ③; 1-3-2: 45° bend ④; 1-3-3: Spherical ground joint ③; 2: Connector; 2-1: Arc bend; 2-2: Bowl-shaped ground joint ②; 2-3: Bowl-shaped ground joint ③; 3: Inlet pipe; 4: High-temperature furnace tube. Detailed Implementation

[0032] To make the objectives, contents, and advantages of this utility model clearer, the specific embodiments of this utility model will be described in further detail below with reference to the accompanying drawings and examples.

[0033] During the use of a semiconductor high-temperature furnace, the front end of the high-temperature furnace tube 4 is usually directly connected to the inlet pipe 3, such as... Figure 1 and Figure 3 As shown, the gas mixing pipe provided in this embodiment can be directly installed between the gas inlet pipe 3 and the high-temperature furnace tube 4 to improve the gas mixing efficiency and gas mixing uniformity.

[0034] 1. Structural Composition

[0035] like Figure 2 , Figure 4 and Figure 5 As shown, the gas mixing pipe for improving the uniformity of gas mixing in this embodiment includes a three-way pipe 1 and a connector 2. The three-way pipe 1 includes a main gas pipeline 1-1, a gas branch pipeline ①1-2, and a gas branch pipeline ②1-3. The two ends of the main gas pipeline 1-1 are connected to the inlet pipe 3 and the high-temperature furnace tube 4, respectively, which serves to introduce the gas to be mixed through the inlet pipe 3, mix it thoroughly, and then discharge it to the high-temperature furnace tube 4. The main gas pipeline 1-1 is connected sequentially from the inlet direction to the outlet direction to the front end of the gas branch pipeline ①1-2 and the front end of the gas branch pipeline ②1-3. The rear end of the gas branch pipeline ①1-2 and the rear end of the gas branch pipeline ②1-3 are connected through the connector 2.

[0036] Furthermore, the gas main pipeline 1-1 has a spherical ground joint ①1-1-1 at its inlet end for connection with the inlet pipe 3; the gas main pipeline 1-1 has a bowl-shaped ground joint ①1-1-2 at its outlet end for connection with the high-temperature furnace tube 4; the shape and size of the spherical ground joint ①1-1-1 and the bowl-shaped ground joint ①1-1-2 must match the connection form of the inlet pipe 3 and the high-temperature furnace tube 4 respectively, so that the gas mixing pipe can be attached to the front end of any high-temperature furnace tube that needs gas mixing.

[0037] Furthermore, the main gas pipeline 1-1 is provided with branches ①1-1-3 and ②1-1-4 from the inlet direction to the outlet direction, respectively, for connecting the gas branch pipeline ①1-2 and the gas branch pipeline ②1-3.

[0038] The gas branch line ①1-2 is mainly used to divert the lighter components, i.e., light gases, in the mixed gas.

[0039] A 45° bend ①1-2-1 is provided in the middle of the gas branch line ①1-2, and a 45° bend ③1-3-1 is provided in the middle of the gas branch line ②1-3. The 45° bend ①1-2-1 and the 45° bend ③1-3-1 are used to adjust the direction of the rear half of the gas branch line ①1-2 and the gas branch line ②1-3 to be parallel, so as to facilitate the connection with the connector 2.

[0040] A 45° bend ②1-2-2 is installed at the rear end of gas branch line ①1-2, and a 45° bend ④1-3-2 is installed at the rear end of gas branch line ②1-3. The 45° bends ②1-2-2 and ④1-3-2 respectively adjust the rear ends of gas branch line ①1-2 and gas branch line ②1-3 to form a 45° angle with the direction of the main gas line 1-1. Figure 3 As shown, this design allows the connection direction of the tee pipe 1 to be at a 45° angle to the connection direction of the connector 2 and the high-temperature furnace tube 4, so as to avoid conflict when the tee pipe 1 is connected to both the connector 2 and the high-temperature furnace tube 4 at the same time.

[0041] The gas branch line ①1-2 is provided with a spherical ground joint interface ②1-2-3 at its tail end, and the gas branch line ②1-3 is provided with a spherical ground joint interface ③1-3-3 at its tail end. The spherical ground joint interface ②1-2-3 and the spherical ground joint interface ③1-3-3 are used to connect with the connector 2.

[0042] like Figure 4 As shown, the main structure of the connector 2 is an arc-shaped bend 2-1. The two ends of the arc-shaped bend 2-1 are respectively provided with a bowl-shaped ground joint ②2-2 and a bowl-shaped ground joint ③2-3. The bowl-shaped ground joint ②2-2 is used to connect with the ball-shaped ground joint interface ②1-2-3 of the tee pipe 1, and the bowl-shaped ground joint ③2-3 is used to connect with the ball-shaped ground joint interface ③1-3-3.

[0043] The bowl-shaped ground joint ②, the bowl-shaped ground joint ③, the spherical ground joint interface ② and the spherical ground joint interface ③ can adopt any interface form, but they must be matched in pairs and have a certain degree of sealing.

[0044] 2. Working principle

[0045] The working principle of the gas mixing pipe of this utility model is as follows: Figure 5 As shown, the gas to be mixed enters the mixing pipe through the spherical ground joint ①1-1-1 at the inlet. The lighter component of the gas floats at the top of the pipe, while the heavier component sinks at the bottom. The gas to be mixed is split at branch ①1-1-3; the lighter gas flows upward into gas branch pipe ①1-2, while the remaining heavier gas continues forward along the main gas line 1-1. Because the main gas line 1-1 and gas branch pipe ①1-2 form a 45° acute angle along the gas flow direction, the gas is easily split. The lighter gas entering gas branch pipe ①1-2 flows along gas branch pipe ①1-2 into connector 2, then downwards into gas branch pipe ②1-3, and finally merges back into the main gas line 1-1 at branch ②1-1-4. Because the main gas pipeline 1-1 and the branch gas pipeline ②1-3 form a 135° obtuse angle along the gas flow direction, the light gas flowing into the branch pipeline interferes with the movement direction of the heavy gas in the main pipeline. Therefore, at the branch ②1-1-4, the light and heavy gases can be fully mixed. Finally, the mixed gas flows forward along the main gas pipeline 1-1 into the high-temperature furnace tube 4.

[0046] 3. Material Selection

[0047] The gas mixing tube described in this utility model needs to be used with a semiconductor high-temperature furnace. It needs to be able to withstand high temperatures, corrosion, and have high cleanliness. Therefore, the same high-purity quartz material as the high-temperature furnace tube is selected.

[0048] Application Example 1:

[0049] In the high-temperature oxidation process, multiple gases, including argon (Ar), oxygen (O2), and argon-supported dichloroethylene (Ar-DCE), need to be simultaneously introduced into the high-temperature furnace tube. O2 has the lowest density, while Ar-DCE has the highest. When the three gases are introduced into the mixing pipe, the gas component with a higher O2 content flows into gas branch pipe ①, and then merges into the main gas pipe via gas branch pipe ②, achieving thorough mixing of the three gases. After mixing, the uniformity of the high-temperature oxidation process is improved, and the oxide layer thickness error within a 4-inch wafer is reduced from ±5.0 nm to ±0.8 nm.

[0050] Application Example 2:

[0051] In the high-temperature phosphorus pre-deposition process, multiple gases, including argon (Ar), oxygen (O2), and argon-supported phosphorus oxychloride (Ar-POCl3), need to be simultaneously introduced into the high-temperature furnace tube. O2 has the lowest density, while Ar-POCl3 has the highest. When the three gases are introduced into the mixing pipe, the gas component with a higher O2 content flows into gas branch pipe ①, and then merges into the main gas pipe via gas branch pipe ②, achieving thorough mixing of the three gases. After mixing, the uniformity of the high-temperature oxidation process is improved, and the sheet resistance error of the 4-inch wafer inner surface decreases from ±1.12Ω / □ to ±0.21Ω / □.

[0052] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present utility model, and these improvements and modifications should also be considered within the protection scope of the present utility model.

Claims

1. A gas mixing pipe for improving the uniformity of gas mixing in a high-temperature semiconductor furnace, characterized in that, It includes a three-way pipe (1) and a connector (2); the three-way pipe (1) includes a main gas pipeline (1-1), a gas branch pipeline ① (1-2) and a gas branch pipeline ② (1-3). The two ends of the main gas pipeline (1-1) are connected to the inlet pipe (3) and the high-temperature furnace tube (4) respectively, so as to introduce the gas to be mixed through the inlet pipe (3), mix it thoroughly and then discharge it to the high-temperature furnace tube (4); the main gas pipeline (1-1) is connected to the front end of the gas branch pipeline ① (1-2) and the front end of the gas branch pipeline ② (1-3) in sequence from the gas inlet direction to the gas outlet direction. The rear end of the gas branch pipeline ① (1-2) and the rear end of the gas branch pipeline ② (1-3) are connected through the connector (2).

2. The gas mixing pipe for improving the uniformity of gas mixing in a high-temperature semiconductor furnace as described in claim 1, characterized in that, The gas main pipeline (1-1) is provided with a spherical ground joint ① (1-1-1) at the inlet end for connection with the inlet pipe (3); the gas main pipeline (1-1) is provided with a bowl-shaped ground joint ① (1-1-2) at the outlet end for connection with the high-temperature furnace tube (4).

3. The gas mixing pipe for improving the uniformity of gas mixing in a high-temperature semiconductor furnace as described in claim 2, characterized in that, The main gas pipeline (1-1) has branches ① (1-1-3) and ② (1-1-4) respectively from the inlet direction to the outlet direction, which are used to connect the gas branch pipeline ① (1-2) and the gas branch pipeline ② (1-3).

4. The gas mixing pipe for improving the uniformity of gas mixing in a high-temperature semiconductor furnace as described in claim 3, characterized in that, The gas branch line ① (1-2) is provided with a 45°C section in the middle. o The bend ① (1-2-1) and the gas branch pipe ② (1-3) are provided with a 45° bend in the middle. o Bend ③ (1-3-1), through the 45 o Bend ① (1-2-1) and the 45 o The bend ③ (1-3-1) adjusts the direction of the latter half of the gas branch pipe ① (1-2) and the gas branch pipe ② (1-3) to be parallel.

5. The gas mixing pipe for improving the uniformity of gas mixing in a high-temperature semiconductor furnace as described in claim 4, characterized in that, The connection direction of the three-way pipe (1) is at a 45° angle to the connection direction of the connector (2) and the high-temperature furnace tube (4).

6. The gas mixing pipe for improving the uniformity of gas mixing in a high-temperature semiconductor furnace as described in claim 5, characterized in that, The gas branch line ① (1-2) is equipped with a 45° angle at its rear end. o The rear end of the bend ② (1-2-2) of the gas branch pipe ② (1-3) is provided with a 45° bend. o Bend ④ (1-3-2), 45 o Bend ② (1-2-2) and 45 o The bend ④ (1-3-2) adjusts the rear ends of the gas branch pipe ① (1-2) and the gas branch pipe ② (1-3) to form a 45° angle with the direction of the main gas pipe (1-1); The gas branch line ① (1-2) is provided with a spherical ground joint interface ② (1-2-3) at its tail end, and the gas branch line ② (1-3) is provided with a spherical ground joint interface ③ (1-3-3) at its tail end. The spherical ground joint interface ② (1-2-3) and the spherical ground joint interface ③ (1-3-3) are used to connect with the connector (2). The main structure of the connector (2) is an arc-shaped bend (2-1). The arc-shaped bend (2-1) is provided with a bowl-shaped ground joint ② (2-2) and a bowl-shaped ground joint ③ (2-3) at both ends. The bowl-shaped ground joint ② (2-2) is used to connect with the ball-shaped ground joint interface ② (1-2-3) of the tee pipe (1), and the bowl-shaped ground joint ③ (2-3) is used to connect with the ball-shaped ground joint interface ③ (1-3-3).

7. The gas mixing pipe for improving the uniformity of gas mixing in a high-temperature semiconductor furnace as described in claim 6, characterized in that, The bowl-shaped ground joint ② (2-2) and the spherical ground joint interface ② (1-2-3), and the bowl-shaped ground joint ③ (2-3) and the spherical ground joint interface ③ (1-3-3) are all sealed together.

8. The gas mixing pipe for improving the uniformity of gas mixing in a high-temperature semiconductor furnace as described in claim 7, characterized in that, The gas branch line ① (1-2) is located above the gas main line (1-1). The gas to be mixed is split at the branch line ① (1-1-3). The light gas enters the gas branch line ① (1-2) upwards, while the remaining heavy gas continues forward along the gas main line (1-1).

9. The gas mixing pipe for improving the uniformity of gas mixing in a high-temperature semiconductor furnace as described in claim 8, characterized in that, The main gas line (1-1) forms an acute angle of 45° with the gas branch line ① (1-2), and the main gas line (1-1) forms an obtuse angle of 135° with the gas branch line ② (1-3).

10. The gas mixing pipe for improving the gas mixing uniformity of a high-temperature semiconductor furnace as described in any one of claims 1-9, characterized in that, The three-way pipe (1) and connector (2) are made of the same high-purity quartz material as the high-temperature furnace tube.

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