Sensors and electronics

Abstract

The utility model provides a kind of sensor and electronic equipment, it is related to sensor field.Sensor includes: substrate, resistance sensing layer, capacitance sensing layer, pressure sensitive layer and contact layer.Resistance sensing layer is set on substrate.Capacitance sensing layer is set on the side of resistance sensing layer away from substrate, and capacitance sensing layer includes at least one hollow structure, and at least one hollow structure extends from the side of capacitance sensing layer close to resistance sensing layer to the side of capacitance sensing layer away from resistance sensing layer.Pressure sensitive layer is set on capacitance sensing layer, and is filled into at least one hollow structure, and pressure sensitive layer is contacted with the side of resistance sensing layer away from substrate by at least one hollow structure.Contact layer is set on pressure sensitive layer, and is configured to generate deformation under the action of external force, to transmit external force to pressure sensitive layer.

Description

Technical Field

[0001] This utility model relates to the fields of sensors and artificial intelligence, and in particular to a sensor and electronic device. Background Technology

[0002] Flexible electronic materials are widely used in the field of artificial intelligence involving wearable devices, among which the pressure sensing capability of flexible electronic materials is particularly critical. With the upgrading of wearable devices, in order to avoid the inability to accurately capture slight touches or grasping actions, the requirements for the pressure sensing sensitivity of flexible electronic materials are also gradually increasing. Utility Model Content

[0003] This invention provides a sensor and an electronic device.

[0004] According to a first aspect, the present invention provides a sensor comprising: a substrate; a resistance sensing layer disposed on the substrate; a capacitance sensing layer disposed on the side of the resistance sensing layer away from the substrate, the capacitance sensing layer including at least one hollow structure extending from the side of the capacitance sensing layer near the resistance sensing layer to the side of the capacitance sensing layer away from the resistance sensing layer; a pressure-sensitive layer disposed on the capacitance sensing layer and filled within the at least one hollow structure, the pressure-sensitive layer contacting the side of the resistance sensing layer away from the substrate through the at least one hollow structure; and a contact layer disposed on the pressure-sensitive layer and configured to deform under the action of an external force to transmit the external force to the pressure-sensitive layer.

[0005] According to a second aspect, the present invention provides an electronic device, including: a sensor provided by the present invention.

[0006] In this embodiment of the invention, the simultaneous sensing of external pressure using a resistive sensing layer and a capacitive sensing layer forms a dual-mode complementary mechanism, improving sensing sensitivity. The electrical signals generated by the two sensing modes serve as backups for each other. When one sensing mode is affected by environmental interference, the other sensing mode can provide a correction reference, improving the robustness and accuracy of the sensing results. Specifically, the capacitive sensing layer senses light touches, while the resistive sensing layer senses heavy pressure, which broadens the sensor's sensing range and achieves high-precision detection across the entire measurement range. Attached Figure Description

[0007] Figure 1 A schematic diagram of the structure of a sensor according to an embodiment of the present invention is shown.

[0008] Figure 2A A partial structural schematic diagram of a sensor according to an embodiment of the present invention is shown.

[0009] Figure 2B It shows Figure 2A A schematic diagram of the structure of region a in the middle.

[0010] Figure 3 A partial structural schematic diagram of a sensor according to another embodiment of the present invention is shown.

[0011] Figure 4 A schematic diagram of the structure of a sensor according to another embodiment of the present invention is shown.

[0012] Figure 5 A schematic diagram of the sensor according to the present invention is shown.

[0013] Figure 6A and Figure 6B A schematic diagram of the sensor according to the present invention is shown.

[0014] Figure 7 A schematic diagram of the structure of an electronic device according to an embodiment of the present invention is shown. Detailed Implementation

[0015] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the described embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model. In the following description, some specific embodiments are for descriptive purposes only and should not be construed as limiting the utility model in any way, but are merely examples of embodiments of this utility model. Conventional structures or constructions will be omitted where they may cause confusion in understanding the utility model. It should be noted that the shapes and dimensions of the components in the figures do not reflect actual size and proportion, but are only schematic representations of the contents of the embodiments of this utility model.

[0016] Unless otherwise defined, the technical or scientific terms used in the embodiments of this utility model shall have the ordinary meaning as understood by those skilled in the art. The terms "first," "second," and similar terms used in the embodiments of this utility model do not indicate any order, quantity, or importance, but are merely used to distinguish different components.

[0017] Furthermore, in the description of the embodiments of this utility model, the terms "connected to" or "linked" can refer to two components being directly connected, or to two components being connected via one or more other components, with the connection method being electrical connection or electrical coupling. Additionally, the two components can also be connected or coupled via wired or wireless means.

[0018] Figure 1 A schematic diagram of the structure of a sensor according to an embodiment of the present invention is shown.

[0019] like Figure 1 As shown, the sensor 100 includes a substrate 10, a resistance sensing layer 20, a capacitance sensing layer 30, a pressure-sensitive layer 40, and a contact layer 50 stacked sequentially from bottom to top.

[0020] In an embodiment of this utility model, a resistance sensing layer 20 is disposed on a substrate 10, a capacitance sensing layer 30 is disposed on the side of the resistance sensing layer 20 away from the substrate 10, a pressure-sensitive layer 40 is disposed on the capacitance sensing layer 30, and a contact layer 50 is disposed on the side of the pressure-sensitive layer 40 away from the capacitance sensing layer 30.

[0021] The capacitive sensing layer 30 includes at least one cutout structure 31, which extends from the side of the capacitive sensing layer 30 near the resistive sensing layer 20 to the side of the capacitive sensing layer 30 away from the resistive sensing layer 20. A pressure-sensitive layer 40 is filled within the at least one cutout structure 31, and the pressure-sensitive layer 40 contacts the side of the resistive sensing layer 20 away from the substrate 10 through the at least one cutout structure 31.

[0022] In this embodiment of the invention, the pressure-sensitive layer 40 can directly contact the capacitive sensing layer 30 and contact the resistive sensing layer 20 through the hollow structure 31. When the pressure-sensitive layer 40 deforms, it can transmit external pressure to the capacitive sensing layer 30 and the resistive sensing layer 20, so that both the capacitive sensing layer 30 and the resistive sensing layer 20 can sense the external pressure.

[0023] In this embodiment of the invention, the resistive sensing layer 20 detects external pressure by means of a change in resistance caused by pressure, which in turn causes a change in current in the circuit, thereby realizing the sensing process of converting pressure into an electrical signal. The capacitive sensing layer 30 detects external pressure by means of a change in capacitance caused by pressure, which in turn causes a change in current in the circuit, thereby realizing the sensing process of converting pressure into an electrical signal.

[0024] In an embodiment of this invention, the contact layer 50 is configured to deform under the action of an external force to transmit the external force to the pressure-sensitive layer 40. The pressure-sensitive layer 40 also deforms accordingly based on the deformation of the contact layer 50, thereby transmitting the external force to the capacitive sensing layer 30 and the resistive sensing layer 20.

[0025] The surface of the contact layer 50 furthest from the pressure-sensitive layer 40 is used to receive external pressure and transmit the received external pressure to the pressure-sensitive layer 40. The contact layer 50 may include a silicone matrix and a wear-resistant filler, such as silica microspheres, polyurethane particles, etc. The surface of the contact layer 50 furthest from the pressure-sensitive layer 40 can simulate the feel of skin to provide a coefficient of friction and softness similar to human skin.

[0026] The thickness of the contact layer 50 is approximately 0.5mm to 2mm. Within this thickness range, the contact layer 50 can provide a comfortable and realistic tactile experience. If the thickness of the contact layer 50 is too low, the material will be too hard, resulting in a stiff feel that cannot simulate the touch of natural skin, and the wear-resistant filler will be easily exposed, affecting the smoothness of contact. If the thickness of the contact layer 50 is too high, the contact layer 50 will be too soft and have a sluggish response. In addition, within this thickness range, it is beneficial to disperse external pressure and protect the structure of the resistive sensing layer 20, the capacitive sensing layer 30, and the pressure-sensitive layer 40.

[0027] In this embodiment of the invention, the capacitive sensing layer 30 changes capacitance based on charge transfer in the circuit, and the resistive sensing layer 20 changes current based on changes in resistance in the circuit. Compared to the resistive sensing layer 20, the capacitive sensing layer 30 is closer to the pressure-sensitive layer 40 and the contact layer 50. This ensures that the capacitive sensing layer 30 can more accurately sense charge transfer based on external pressure, improving its sensitivity to external pressure. The pressure-sensitive layer 40 contacts the resistive sensing layer through the perforated structure 31 of the capacitive sensing layer 30. This ensures that the electrical signal inside the pressure-sensitive layer 40 can be transmitted to the resistive sensing layer 20, enabling the resistive sensing layer 20 to accurately sense current changes based on external pressure.

[0028] In this embodiment of the invention, the resistance change in the sensing circuit is generated based on the external pressure received by the contact layer 50. The external pressure causes the contact layer 50 to deform, which in turn causes the pressure-sensitive layer 40 to deform. The deformation of the contact layer 50 and the pressure-sensitive layer 40 is related to the magnitude of the external pressure value; therefore, the contact layer 50 and the pressure-sensitive layer 40 convert the external pressure value into a deformation. The deformation of the pressure-sensitive layer 40 can be converted into a resistance change in the sensing circuit, allowing the resistance sensing layer 20 to sense the pressure value based on the current change in the sensing circuit.

[0029] The capacitance change in the sensing circuit is also based on the external pressure received by the contact layer 50. The external pressure causes deformation of the contact layer 50, which in turn causes deformation of the pressure-sensitive layer 40. The deformation of the pressure-sensitive layer 40 causes charge transfer in the capacitive sensing layer 30, thereby causing a capacitance change in the sensing circuit. This allows the capacitive sensing layer 30 to sense the pressure value based on the amount of capacitance change in the sensing circuit.

[0030] The ability of the pressure-sensitive layer 40 to convert pressure values ​​into resistance values ​​is related to the performance of the pressure-sensitive layer 40. Since the resistive sensing layer 20 needs to receive electrical signals from the pressure-sensitive layer 40, its pressure sensing can be considered contact-based. When the deformation of the pressure-sensitive layer 40 is small, it may be unable to convert external pressure into a change in resistance, thus affecting the sensing effect of the resistive sensing layer 20.

[0031] The distance between the deformed structure of the pressure-sensitive layer 40 caused by external deformation and the capacitive sensing layer 30 affects the capacitance balance in the capacitive sensing layer 30, resulting in charge transfer. For example, the deformed structure affects the capacitance balance in the capacitive sensing layer 30 both before and after contact with it. Therefore, the capacitive sensing layer 30 can be considered to sense pressure in a non-contact or contact manner. Even with a small deformation of the pressure-sensitive layer 40, the capacitive sensing layer 30 can still sense changes in external pressure.

[0032] Since the conditions for charge transfer are lower than those for resistance change, the capacitive sensing layer 30 can be used to sense smaller external pressures, and the resistive sensing layer 20 can be used to sense larger external pressures, thereby improving the sensitivity of the sensor 100 to sense a wider range of external pressures.

[0033] It should be noted that, based on the actual sensing performance of the resistive sensing layer 20 and the capacitive sensing layer 30, the resistive sensing layer 20 is not limited to sensing only larger external pressures. Similarly, the capacitive sensing layer 30 is not limited to sensing only smaller external pressures. When external pressure is applied to the contact layer 50, the resistive sensing layer 20 and the capacitive sensing layer 30 can simultaneously sense the external pressure based on the deformation of the pressure-sensitive layer 40, thereby achieving dual sensing and improving sensing sensitivity.

[0034] In this embodiment of the invention, based on the structure where the pressure-sensitive layer 40 is in contact with both the resistive sensing layer 20 and the capacitive sensing layer 30, the simultaneous sensing of external pressure by the resistive sensing layer 20 and the capacitive sensing layer 30 forms a dual-mode complementary mechanism, improving sensing sensitivity. The electrical signals generated by the two sensing modes serve as backups for each other. When one sensing mode is affected by environmental interference, the other sensing mode can provide a correction reference, improving the robustness and accuracy of the sensing results. Specifically, using the capacitive sensing layer 30 to sense light touches and the resistive sensing layer 20 to sense heavy pressure broadens the sensor's sensing range, achieving high-precision detection across the entire range (from light touches to heavy pressure).

[0035] Furthermore, the capacitive sensing layer 30 is directly integrated onto the resistive sensing layer 20, which simplifies the structure of the sensor 100 and helps reduce its thickness. The capacitive sensing layer 30 is closer to the pressure-sensitive layer 40, which ensures the sensitivity of the capacitive sensing layer 30 by facilitating changes in the distance between the sensing deformation structure and the capacitive sensing layer 30. The perforated structure 31 of the capacitive sensing layer 30 ensures contact between the pressure-sensitive layer 40 and the resistive sensing layer 20, allowing both layers to sense external pressure based on resistance changes.

[0036] Combination Figure 2A and Figure 2B The pressure-sensitive layer 40, the resistance sensing layer 20, and the capacitance sensing layer 30 are illustrated schematically. Figure 2A A partial structural schematic diagram of a sensor according to an embodiment of the present invention is shown. Figure 2B It shows Figure 2A A schematic diagram of the structure of region a in the middle.

[0037] like Figure 2A As shown, the pressure-sensitive layer 40 includes a first pressure-sensitive portion 41 and a second pressure-sensitive portion 42. The first pressure-sensitive portion 41 fills at least one hollow structure 31 and is in contact with the resistance sensing layer 20 so that the resistance sensing layer 20 receives electrical signals from the pressure-sensitive layer 40.

[0038] In an embodiment of this invention, the first pressure-sensitive part 41 and the resistance sensing layer 20 can be electrically connected via conductive adhesive. Changes in the electrical signal generated in the pressure-sensitive layer 40 can be transmitted to the resistance sensing layer 20 via the first pressure-sensitive part 41.

[0039] When an external force is applied to the contact layer, the contact layer deforms towards the pressure-sensitive layer, thereby applying pressure to the pressure-sensitive layer 40 and transmitting the external pressure to the pressure-sensitive layer 40. The pressure-sensitive layer 40 includes conductive paths and detection electrodes. When pressure is applied to the pressure-sensitive layer 40, the internal conductive paths increase. As the pressure increases and the number of conductive paths increases, the resistance of the pressure-sensitive layer 40 decreases. When a voltage is applied to the pressure-sensitive layer 40, the detection electrodes output the current inside the pressure-sensitive layer 40 outwards, causing the resistance sensing layer 20 to receive an electrical signal from the pressure-sensitive layer 40.

[0040] When external pressure is applied to the pressure-sensitive layer 40, the overall resistance of the entire pressure-sensitive layer 40 changes, and the current inside the pressure-sensitive layer 40 also changes, thereby converting the pressure into an electrical signal. The pressure-sensitive layer 40 transmits the internal current change to the resistance sensing layer 20 through the first pressure-sensitive part 41, so that the resistance sensing layer 20 can sense it.

[0041] like Figure 2A and Figure 2B As shown, the second pressure-sensitive part 42 is disposed on the capacitive sensing layer 30. The second pressure-sensitive part 42 is configured to deform in the direction close to the capacitive sensing layer 30 under the action of external force to form a protrusion 421, so that the capacitive sensing layer 30 can sense the protrusion 421.

[0042] In embodiments of this invention, under the action of external force, protrusions can be formed on the surface of the second pressure-sensitive portion 42 near the capacitive sensing layer 30. For example, a protrusion 421 can be formed on the second pressure-sensitive portion 42 that is in contact with the surface of the capacitive sensing layer 30 away from the resistive sensing layer 20.

[0043] Due to the formation of the protrusion 421, the distance between the surface of the capacitive sensing layer 30 near the protrusion 421 and the capacitive sensing layer 30 changes. Based on this change in distance, charge transfer occurs in the capacitive sensing layer 30, thereby causing a change in capacitance. For example, charge in the capacitive sensing layer 30 may transfer to the protrusion 421, and the capacitance in the capacitive sensing layer 30 may decrease.

[0044] Since the capacitive sensing layer 30 senses based on the change in distance between the pressure-sensitive layer 40 and the capacitive sensing layer 30, the tiny protrusions 421 in the second pressure-sensitive part 42 can also cause changes in capacitance in the capacitive sensing layer 30, thus the capacitive sensing layer 30 has high sensing sensitivity.

[0045] In embodiments of this invention, under the action of external force, protrusions 411 can be formed on the surface of the first pressure-sensitive portion 41 located in the hollow structure near the capacitive sensing layer 30. For example, the first pressure-sensitive portion 41 in contact with the surface of the capacitive sensing layer 30 can form protrusions 411.

[0046] The working principle of protrusion 411 is similar to that of protrusion 421, and will not be described in detail for the sake of simplicity.

[0047] Figure 2B The protrusions 421 and 411 shown are merely illustrative, and this utility model does not limit the structure and size of the protrusions.

[0048] Figure 3 A partial structural schematic diagram of a sensor according to another embodiment of the present invention is shown.

[0049] Figure 3 The diagram shows a resistive sensing layer 20, a buffer layer, and a capacitive sensing layer 30 stacked sequentially from bottom to top.

[0050] In embodiments of this invention, the resistance sensing layer 20 can be a thin-film transistor (TFT) substrate. The TFT included within the resistance sensing layer 20 can sense changes in the resistance of the pressure-sensitive layer 40. The capacitance sensing layer 30 can be integrated onto the TFT substrate, allowing the capacitance sensing layer 30 and the resistance sensing layer 20 to form a TFT capacitor substrate. The structure of the TFT capacitor substrate has high integration, eliminating the need for additional complex independent sensor modules, and maintaining the flexibility and thinness advantages of electronic skin.

[0051] In an embodiment of this invention, the orthographic projection of the capacitive sensing layer 30 onto the substrate overlaps with the orthographic projection of the buffer layer onto the substrate. The buffer layer is used to isolate the resistive sensing layer 20 and the capacitive sensing layer 30, preventing their sensing processes from interfering with each other.

[0052] Combination Figure 2A A buffer layer is disposed between the resistive sensing layer 20 and the capacitive sensing layer 30. The orthographic projection of the capacitive sensing layer 30 onto the resistive sensing layer 20 overlaps with the orthographic projection of the buffer layer 30 onto the resistive sensing layer 20. The orthographic projection of the second pressure-sensitive part 42 onto the resistive sensing layer 20 does not overlap with the orthographic projection of the buffer layer 30 onto the resistive sensing layer 20. For example, the orthographic projection can be a projection along a direction perpendicular to the resistive sensing layer 20.

[0053] The buffer layer also protects the resistive sensing layer 20 and the capacitive sensing layer 30. When the resistive sensing layer 20 and the capacitive sensing layer 30 sense pressure from the pressure-sensitive layer, the buffer layer can release the pressure and protect the structure of the resistive sensing layer 20 and the capacitive sensing layer 30.

[0054] In an embodiment of this utility model, the capacitive sensing layer 30 includes a first metal layer TMA, a capacitor dielectric layer TLD, a second metal layer TMB, and a cover layer OC stacked sequentially from bottom to top.

[0055] A first metal layer TMA is disposed on the resistive sensing layer 20, a capacitor dielectric layer TLD is disposed on the first metal layer TMA, a second metal layer TMB is disposed on the capacitor dielectric layer TLD, and a capping layer OC is disposed on the second metal layer TMB. The first metal layer TMA, the capacitor dielectric layer TLD, and the second metal layer TMB form a capacitor for storing charge.

[0056] In an embodiment of this utility model, the resistance sensing layer 20 includes a first electrode layer Gate1, a gate insulating layer GI, an active layer Active, a source / drain metal layer S / D, a protective layer PVX, and a second electrode layer ITO, which are stacked sequentially from bottom to top.

[0057] A first electrode layer (Gate1) is disposed on the substrate, a gate insulating layer (GI) is disposed on the first electrode layer (Gate1), an active layer (Active) is disposed on the gate insulating layer (GI), a source / drain metal layer (S / D) is disposed on the active layer (Active), a protective layer (PVX) is disposed on the source / drain metal layer (S / D), and a second electrode layer (ITO) is disposed on the protective layer (PVX). The first electrode layer (Gate1), the gate insulating layer (GI), the active layer (Active), and the source / drain metal layer (S / D) form a transistor for transmitting current.

[0058] The portion where the orthographic projection of the active layer (Active) on the substrate overlaps with the orthographic projection of the first electrode layer (Gate1) on the substrate constitutes the gate of the transistor. The first electrode layer (Gate1) is electrically connected to the gate line in the sensor to receive a gate signal. The gate signal can be applied to the gate of the transistor, thereby controlling the transistor to switch between an on and off state. By using the gate signal, multiple transistors in the resistance sensing layer 20 can be controlled to be in different states, thereby enabling the resistance sensing layer 20 to detect external pressure applied to different areas separately.

[0059] The protective layer PVX includes vias, and the second electrode layer ITO is connected to the source / drain metal layer S / D through the vias. The second electrode layer ITO is also electrically connected to the varistor layer. The overlapping portion of the orthogonal projection of the active layer (Active) on the substrate and the orthogonal projection of the source / drain metal layer S / D on the substrate constitutes the source or drain of the transistor. The source or drain of the transistor is connected to the varistor layer to receive current from it. For example, the second electrode layer ITO can be connected to the varistor layer using conductive adhesive.

[0060] In an embodiment of this utility model, the pressure-sensitive layer is in contact with the cover layer OC. The pressure-sensitive layer is configured to deform in the direction close to the capacitive sensing layer 30 under the action of an external force to form a protrusion, so that the second metal layer TMB can sense the protrusion.

[0061] The capping layer OC can be a flexible dielectric layer used to transmit pressure. The protrusions in the pressure-sensitive layer can cause deformation of the capping layer OC, thereby reducing the distance between the capping layer OC and the second metal layer TMB. When the protrusions are close to the second metal layer TMB, the deformation in the capping layer OC caused by the protrusions induces a connection with the second metal layer TMB. The charge stored between the first metal layer TMA and the second metal layer TMB can be transferred to the deformed structure in the capping layer OC, thus reducing the charge between the first metal layer TMA and the second metal layer TMB.

[0062] Under low external pressure, the protrusion moves closer to the second metal layer TMB, reducing the distance between them. The protrusion can cause the second metal layer TMB to move closer to the first metal layer TMA, or it can remain unchanged in the distance between them. The capacitive sensing layer 30 can induce charge transfer based on the effect of the protrusion on the second metal layer TMB, generating a change in capacitance, thereby converting the external pressure into an electrical signal.

[0063] In an embodiment of the present invention, the orthographic projection of the contact layer on the substrate at least partially overlaps with the orthographic projection of the capacitive sensing layer 30 on the substrate, and the contact layer is configured to disperse external forces acting on the capacitor dielectric layer TLD.

[0064] Since there is at least one hollow structure in the capacitive sensing layer 30, and there is also a hollow structure in the contact layer or the contact layer does not completely cover the pressure-sensitive layer, the orthogonal projection of the contact layer on the substrate and the orthogonal projection of the capacitive sensing layer 30 on the substrate at least partially overlap. This can ensure that the capacitive sensing layer 30 can more accurately sense the external pressure transmitted by the contact layer.

[0065] External pressure can be applied to the second metal layer TMB through the contact layer, causing the second metal layer TMB to press down and compress the space of the capacitor dielectric layer TLD. Because the capacitor dielectric layer TLD is compressed, the spacing between the first metal layer TMA and the second metal layer TMB changes, resulting in a change in the capacitor's capacitance.

[0066] The contact layer can uniformly diffuse the external pressure of local point contact within the layer and transfer it to the capacitive sensing layer 30. Multiple regions of the capacitor dielectric layer TLD are compressed based on the external pressure dispersed in the contact layer, thereby dispersing the external pressure in the capacitor dielectric layer TLD.

[0067] Under high external pressure, the protrusions can cause the second metal layer TMB to move closer to the first metal layer TMA. The capacitive sensing layer 30 can generate a capacitance change based on the effect of the protrusions on the capacitor dielectric layer TLD, thereby converting the external pressure into an electrical signal.

[0068] Figure 4 A schematic diagram of the structure of a sensor according to another embodiment of the present invention is shown.

[0069] like Figure 4 As shown, the sensor 100 includes a substrate, a resistance sensing layer 20, a capacitance sensing layer 30, a pressure-sensitive layer 40, a contact layer 50, a control circuit 60, a disassembly / removal interface 70, an adapter 80, and a communication power supply line 90.

[0070] In an embodiment of this utility model, the substrate includes a first sub-part 11, a second sub-part 12, and a third sub-part 13. The first sub-part 11, the second sub-part 12, and the third sub-part 13 are sequentially connected to form a recess. A resistance sensing layer 20, a capacitance sensing layer 30, a pressure-sensitive layer 40, and a contact layer 50 are disposed within the recess. The second sub-part 12, the resistance sensing layer 20, the capacitance sensing layer 30, the pressure-sensitive layer 40, and the contact layer 50 are stacked sequentially from bottom to top.

[0071] The substrate may at least partially surround the resistive sensing layer 20, the capacitive sensing layer 30, the pressure-sensitive layer 40, and the contact layer 50. When pressure is applied to the resistive sensing layer 20, the capacitive sensing layer 30, the pressure-sensitive layer 40, and the contact layer 50, they deform within the recesses formed in the substrate, thereby improving the stability of the sensor.

[0072] For example, the resistive sensing layer 20, the capacitive sensing layer 30, the pressure-sensitive layer 40 and the contact layer 50 can be electrically interconnected through flexible vias or anisotropic conductive adhesive, and are encapsulated in the substrate as a whole.

[0073] The substrate can be a flexible material, providing mechanical support while maintaining flexibility. For example, the substrate can be made of polyimide or modified polyethylene terephthalate film. The thickness of the substrate is approximately 25μm to 50μm. Within this thickness range, the substrate can provide sufficient structural rigidity to prevent excessive wrinkling or twisting of the sensor during assembly and use, thereby ensuring that the resistive sensing layer 20, capacitive sensing layer 30, pressure-sensitive layer 40, and contact layer 50 do not shift or break. The substrate maintains flexibility at this thickness to adapt to complex fitting scenarios such as curved surfaces and wearable devices, keeping the sensor thin and light, and improving wearability and spatial adaptability. Furthermore, this thickness also balances processing yield and packaging reliability, reducing the process risks of excessively thin films being easily torn and excessively thick films being difficult to bend, achieving an optimal balance between support performance and flexibility.

[0074] In an embodiment of this invention, the adapter 80 is electrically connected to the resistance sensing layer 20, the capacitance sensing layer 30, and the varistor layer 40. The control circuit 60 is electrically connected to the adapter 80 and is disposed on the side of the substrate away from the resistance sensing layer 20.

[0075] The control circuit 60 can be a printed circuit board integrating a communication module, a microcontroller unit, and a signal converter. The microcontroller unit is responsible for timing control, data acquisition, and execution of the dual-mode signal fusion algorithm. The signal converter can be a high-precision analog-to-digital converter, supporting capacitance-to-digital conversion and resistance-to-voltage conversion. The communication module supports multiple communication protocols and outputs the processed pressure data to the outside.

[0076] The substrate is disposed between the control circuit 60 and the resistance sensing layer 20. The substrate separates the control circuit 60 from the resistance sensing layer 20 and the capacitance sensing layer 30, which can prevent the operation of the control circuit 60 from interfering with the resistance sensing layer 20 and the capacitance sensing layer 30.

[0077] In this embodiment of the invention, the orthographic projection of the control circuit 60 onto the substrate does not overlap with the orthographic projection of the resistance sensing layer 20 onto the substrate, nor does it overlap with the orthographic projection of the capacitance sensing layer 30 onto the substrate. The control circuit 60 can be disposed in a non-inductive area of ​​the substrate, such as the edge or back of the substrate (the side opposite to where the resistance sensing layer 20 is located). This reduces the occupancy of the control circuit 60 on the sensing area (the area occupied by the resistance sensing layer 20 and the capacitance sensing layer 30), avoiding disruption to the continuity and uniformity of pressure signal acquisition by the resistance sensing layer 20 and the capacitance sensing layer 30. The communication module, microcontroller unit, and signal converter generate high-frequency noise during operation. The control circuit disposed in a non-inductive area reduces crosstalk to weak capacitance and resistance sensing signals, improving detection accuracy and stability. Furthermore, disposing of the control circuit 60 in a non-inductive area of ​​the substrate facilitates wiring and heat dissipation, and also facilitates assembly and maintenance of the control circuit 60.

[0078] In an embodiment of this utility model, the adapter 80 is electrically connected to the capacitive sensing layer 30 and the resistive sensing layer 20 to transmit electrical signals from the capacitive sensing layer 30 and the resistive sensing layer 20 to the control circuit 60.

[0079] The adapter 80 can be made of a multi-layer flexible circuit board, and the adapter 80 can have an embedded shielding layer to reduce capacitive signal crosstalk. The adapter 80 can be connected to the control circuit 60, the capacitance sensing layer 30, the resistance sensing layer 20 and the varistor layer 40 via a board-to-board connector or a zero-insertion-force socket, which facilitates module replacement and maintenance.

[0080] The control circuit 60 can provide power supply voltage to the capacitive sensing layer 30 and the resistive sensing layer 20 through the adapter 80, and can also receive the electrical signal generated by the capacitive sensing layer 30 based on external pressure and the electrical signal generated by the resistive sensing layer 20 based on external pressure, thereby analyzing the external pressure.

[0081] The adapter 80 may include a gating line, through which the control circuit 60 can provide a gating signal to the gate of the transistor in the resistive sensing layer 20.

[0082] In this embodiment of the invention, the mounting / dismounting interface 70 is fixedly connected to the substrate. The sensor 100 can be detachably connected to other devices via the mounting / dismounting interface 70. The mounting / dismounting interface 70 can also be connected to other devices via a board-to-board connector or a zero-insertion-force socket.

[0083] In an embodiment of this utility model, the communication power supply line 90 is disposed on the side of the substrate away from the resistive sensing layer 20 and is connected to the control circuit 60, the resistive sensing layer 20, the capacitive sensing layer 30 and the varistor layer 40. The communication power supply line 90 can provide power to the control circuit 60, the resistive sensing layer 20, the capacitive sensing layer 30 and the varistor layer 40, and can also transmit external information to the control circuit 60.

[0084] The communication power supply line 90 can be formed on a substrate away from the surface of the resistive sensing layer 20 by sputtering copper foil or printing silver paste. The communication power supply line 90 can be connected to an external power source to supply power to the control circuit 60, the resistive sensing layer 20, the capacitive sensing layer 30, and the varistor layer 40. The communication power supply line 90 can also be connected to an external processor to transmit signals between the control circuit 60 and the external processor.

[0085] The pressure-sensitive layer 40 can be made of polydimethylsiloxane, carbon nanotube composite material, or pressure-sensitive conductive ink. The pressure-sensitive layer 40 has a relatively thin thickness, approximately 5 μm to 20 μm. Within this thickness range, the pressure-sensitive layer 40 can exhibit high sensitivity, ensuring accurate detection of even minute pressure changes, avoiding deformation hysteresis due to excessive thickness or structural fragility due to excessive thinness. Furthermore, this thickness ensures that the pressure-sensitive layer 40 possesses good flexibility, adapting to the bending requirements of the sensor.

[0086] Figure 5 A schematic diagram of the sensor according to the present invention is shown.

[0087] like Figure 5 As shown, the first terminal of resistor Rv is electrically connected to the power supply VGL, and the second terminal is electrically connected to node N. The first terminal of resistor R0 is electrically connected to node N, and the second terminal is electrically connected to the microprocessor MCU. The control electrode of transistor T is electrically connected to the microprocessor MCU, the first electrode of transistor T is electrically connected to node N, and the second electrode of transistor T is electrically connected to the signal converter ADC. The microprocessor MCU is electrically connected to the signal converter ADC.

[0088] The first terminal of transistor T can be either the source or the drain, and the second terminal of transistor T can be either the drain or the source. The control terminal of transistor T can be the gate.

[0089] In embodiments of this invention, resistor Rv can be formed from a varistor layer, transistor T can be formed from a resistive sensing layer, and resistor R0 can be formed from either a varistor layer or a resistive sensing layer. The microprocessor (MCU) and signal converter (ADC) are provided by a control circuit. The first terminal of resistor Rv can also be electrically connected to power supply VGL, provided by the microprocessor (MCU).

[0090] The microprocessor (MCU) provides a power supply voltage VGH to the resistor R0 and a gating signal Gate to the control electrode of transistor T. For example, transistor T is an NMOS transistor. When the gating signal Gate provided by the MCU is high, transistor T is in the ON state. In the ON state, transistor T can supply the potential of node N to the signal converter ADC. By controlling the level of the gating signal received by the control electrodes of different transistors T, multiple transistors in the resistive sensing layer can be controlled to be in the ON or OFF state, thereby reducing crosstalk between multiple transistors in the resistive sensing layer.

[0091] When the pressure-sensitive layer is subjected to an external force, the resistance of resistor Rv changes. Since the resistance of resistor R0 remains constant, the potential of node N changes, thereby altering the electrical signal received by the signal converter ADC to obtain the electrical signal derived from the pressure-based conversion of the resistance sensing layer.

[0092] Figure 6A and Figure 6B A schematic diagram of the sensor according to the present invention is shown.

[0093] like Figure 6A and Figure 6B As shown, the capacitor includes electrode plate C1 and electrode plate C2. For example, electrode plate C1 can be a second metal layer TMB, and electrode plate C2 can be a first metal layer TMA. The voltage applied to the two electrode plates of the capacitor can be provided by a communication power supply line or by a control circuit via a connection. A current sensor A can detect the current between electrode plate C1 and the power supply.

[0094] Figure 6A The diagram shows the charge stored in the two plates of a capacitor in the absence of external pressure. Figure 6B When external pressure is applied, charge transfer occurs between the two plates of a capacitor.

[0095] When the external pressure is low, the pressure-sensitive layer cannot change its resistance in a timely manner based on the external pressure. When the protrusion of the pressure-sensitive layer is close to the capacitive sensing layer, the coupling capacitance in the capacitive sensing layer can change from static to dynamic as follows: Figure 6A and Figure 6B As shown.

[0096] like Figure 6A As shown, electrode plate C1 stores positive charge, electrode plate C2 stores negative charge, and a charge point level is formed between electrode plate C1 and electrode plate C2.

[0097] like Figure 6BAs shown, protrusion 421 is close to electrode plate C1, and a capacitor is formed between electrode plate C1 and protrusion 421. Negative charges on electrode plate C2 are transferred to protrusion 421. In this case, the charge between electrode plates C1 and C2 decreases, thus reducing the capacitance of the capacitor. The current detected by current sensor A also changes. The control circuit acquires the current detected by current sensor A, thereby acquiring the electrical signal obtained by the capacitive sensing layer based on pressure conversion.

[0098] Figure 7 A schematic diagram of the structure of an electronic device according to an embodiment of the present invention is shown.

[0099] like Figure 7 As shown, the electronic device 200 includes a sensor 100.

[0100] In the embodiments of this utility model, the working process and structure of the sensor 100 can be as described above. For the sake of brevity, similar parts will not be repeated.

[0101] In embodiments of this invention, the electronic device 200 can be electronic skin. This electronic skin can perform functions such as pressure detection, human skin sweat detection, and human skin temperature detection.

[0102] Optionally, the electronic skin of this invention may include a plurality of sensors 100 arranged in an array, or may include a plurality of sensors 100 arranged in any manner.

[0103] The block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present invention. In this regard, each block in the flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions indicated in the blocks may occur in a different order than those indicated in the drawings. For example, two consecutively indicated blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in the block diagram or flowchart, and combinations of blocks in the block diagram or flowchart, can be implemented using a dedicated hardware-based system that performs the specified function or operation, or using a combination of dedicated hardware and computer instructions.

[0104] Those skilled in the art will understand that the features described in the various embodiments of this utility model can be combined and / or combined in various ways, even if such combinations or combinations are not explicitly described in this utility model. In particular, the features described in the various embodiments of this utility model can be combined and / or combined in various ways without departing from the spirit and teachings of this utility model. All such combinations and / or combinations fall within the scope of this utility model.

[0105] The embodiments of this utility model have been described above. However, these embodiments are merely illustrative and not intended to limit the scope of this utility model. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. Without departing from the scope of this utility model, those skilled in the art can make various substitutions and modifications, all of which should fall within the scope of this utility model.

Claims

1. A sensor, characterized in that, include: substrate; A resistance sensing layer is disposed on the substrate; A capacitive sensing layer is disposed on the side of the resistive sensing layer away from the substrate. The capacitive sensing layer includes at least one hollow structure, which extends from the side of the capacitive sensing layer near the resistive sensing layer to the side of the capacitive sensing layer away from the resistive sensing layer. A pressure-sensitive layer is disposed on the capacitive sensing layer and filled into the at least one hollow structure. The pressure-sensitive layer is in contact with the side of the resistive sensing layer away from the substrate through the at least one hollow structure. as well as A contact layer, disposed on the pressure-sensitive layer, is configured to deform under the action of an external force in order to transmit the external force to the pressure-sensitive layer.

2. The sensor according to claim 1, characterized in that, The pressure-sensitive layer includes: A first pressure-sensitive portion fills the at least one hollow structure and contacts the resistive sensing layer, so that the resistive sensing layer receives an electrical signal from the pressure-sensitive layer; and The second pressure-sensitive part is disposed on the capacitive sensing layer and is configured to deform in the direction close to the capacitive sensing layer under the action of external force to form a protrusion, so that the capacitive sensing layer can sense the protrusion.

3. The sensor according to claim 1, characterized in that, A buffer layer is provided between the resistive sensing layer and the capacitive sensing layer, wherein the orthographic projection of the capacitive sensing layer on the substrate overlaps with the orthographic projection of the buffer layer on the substrate.

4. The sensor according to claim 1, characterized in that, The capacitive sensing layer includes: A first metal layer is disposed on the resistive sensing layer; A capacitor dielectric layer is disposed on the first metal layer; A second metal layer is disposed on the capacitor dielectric layer, forming a capacitor with the capacitor dielectric layer and the first metal layer; and A cover layer is disposed on the second metal layer.

5. The sensor according to claim 4, characterized in that, The orthographic projection of the contact layer onto the substrate at least partially overlaps with the orthographic projection of the capacitive sensing layer onto the substrate, and the contact layer is configured to distribute external forces onto the capacitive dielectric layer.

6. The sensor according to claim 4, characterized in that, The pressure-sensitive layer is in contact with the cover layer. The pressure-sensitive layer is configured to deform in the direction of approaching the capacitive sensing layer under the action of an external force to form a protrusion, so that the second metal layer can sense the protrusion.

7. The sensor according to claim 1, characterized in that, The resistance sensing layer includes: A first electrode layer is disposed on the substrate and electrically connected to the gate line in the sensor to receive a gate signal; A gate insulating layer is disposed on the first electrode layer; An active layer is disposed on the gate insulating layer; A source / drain metal layer is disposed on the active layer; A protective layer, disposed on the source / drain metal layer, includes vias; and The second electrode layer is disposed on the protective layer and connected to the source / drain metal layer through the via. The second electrode layer is electrically connected to the varistor layer.

8. The sensor according to claim 1, characterized in that, The substrate includes a first sub-part, a second sub-part, and a third sub-part; The first sub-part, the second sub-part, and the third sub-part are sequentially connected to form a recess. The resistance sensing layer, the capacitance sensing layer, the pressure-sensitive layer, and the contact layer are disposed within the recess. The second sub-part, the resistance sensing layer, the capacitance sensing layer, the pressure-sensitive layer, and the contact layer are sequentially stacked.

9. The sensor according to claim 1, characterized in that, The sensor includes: The adapter is electrically connected to the sensor; and A control circuit, electrically connected to the adapter, is disposed on the side of the substrate away from the resistive sensing layer.

10. The sensor according to claim 9, characterized in that, The orthographic projection of the control circuit onto the substrate does not overlap with the orthographic projection of the resistive sensing layer onto the substrate; and The orthographic projection of the control circuit onto the substrate does not overlap with the orthographic projection of the capacitive sensing layer onto the substrate.

11. The sensor according to claim 1, characterized in that, The sensor also includes a disassembly interface, which is fixedly connected to the substrate.

12. The sensor according to claim 9, characterized in that, The sensor also includes a communication power supply line disposed on the side of the substrate away from the resistive sensing layer, connected to the control circuit, the resistive sensing layer, the capacitive sensing layer and the pressure-sensitive layer, to supply power to the control circuit, the resistive sensing layer, the capacitive sensing layer and the pressure-sensitive layer, and to transmit external information to the control circuit.

13. The sensor according to claim 9, characterized in that, The adapter is electrically connected to the capacitive sensing layer and the resistive sensing layer in the sensor to transmit electrical signals from the capacitive sensing layer and the resistive sensing layer to the control circuit.

14. The sensor according to claim 1, characterized in that, The thickness of the pressure-sensitive layer is 5μm~20μm; The thickness of the substrate is 25μm~50μm; and The thickness of the contact layer is 0.5mm to 2mm.

15. An electronic device, characterized in that, include: The sensor according to any one of claims 1 to 14.

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