High-transmittance mirror surface photodiode

Abstract

The utility model discloses a mirror surface photodiode of high light transmission, including chip substrate and array setting mirror surface chip on chip substrate, mirror surface chip includes bottom piece, diode crystal, light -transmitting lens, package cover shell, conducting sheet and first paster pin, bottom piece top is connected with diode crystal through conducting sheet, and diode crystal is used for sensing light, conducting sheet passes through first paster pin and the electrical connection of second paster pin of chip substrate bottom, the package cover shell is located bottom piece top, and the package cover shell is equipped with light -transmitting lens, and light -transmitting lens is used for making light ray penetrate and enter diode crystal, the utility model discloses through array arrangement mirror surface chip on chip substrate, can form a large range of photosensitive area, thereby improve the photosensitive coverage range of whole photodiode, make photosensitive diode can large -area capture light ray, effectively improve the photoelectric conversion efficiency and response speed of photosensitive diode.

Description

Technical Field

[0001] This utility model relates to the field of photodiodes, and more particularly to a high-transmittance mirror photodiode. Background Technology

[0002] A photodiode is an optoelectronic device that converts light energy into electrical energy. It is widely used in fields such as photoelectric detection, communication, and photovoltaic power generation. Its working principle is based on the photoelectric effect. When light shines on the photosensitive area of ​​the diode, photons excite electrons in the semiconductor to the conduction band, forming electron-hole pairs, which in turn generate current.

[0003] In the existing technology, during the process of receiving light, some light cannot enter the photosensitive area of ​​a traditional photodiode. Furthermore, under weak light conditions, the photodiode cannot make full use of the available light sources, thus affecting the photoelectric conversion efficiency of the photodiode.

[0004] Therefore, existing technologies have shortcomings and need to be improved. Utility Model Content

[0005] The technical problem to be solved by this utility model is to provide a high-transmittance mirror photodiode with a compact structure that effectively improves photoelectric conversion efficiency.

[0006] The technical solution of this utility model is as follows: a high light transmittance mirror photodiode, comprising a chip substrate and mirror chips arrayed on the chip substrate;

[0007] The mirror chip includes a substrate, a diode crystal, a light-transmitting lens, a package cover, a conductive sheet, and a first surface mount pin. The top of the substrate is connected to the diode crystal via the conductive sheet, and the diode crystal is used to sense light.

[0008] The first patch pin is located at the bottom of the substrate, and the conductive sheet is electrically connected to the second patch pin at the bottom of the chip substrate through the first patch pin;

[0009] The encapsulation cover is located on top of the substrate, and the encapsulation cover is provided with a light-transmitting lens, which is used to allow light to pass through and enter the diode crystal.

[0010] Using the above technical solution, in the high-transmittance mirror photodiode, the bottom of the substrate is provided with an adhesive portion that adheres to the chip substrate.

[0011] In the above technical solution, the high-transmittance mirror photodiode has an encapsulation colloid filling the space between the encapsulation cover and the diode crystal.

[0012] Using the above technical solution, in the high-transmittance mirror photodiode, the top of the substrate is provided with a positioning block, and the bottom of the encapsulation cover is provided with a positioning groove that matches the positioning block.

[0013] In the above technical solution, the encapsulating colloid in the high-transmittance mirror photodiode is silicone or epoxy resin.

[0014] Using the above technical solution, in the high-transmittance mirror photodiode, the surface of the light-transmitting lens is coated with an anti-reflective coating, and the anti-reflective coating is a magnesium fluoride coating.

[0015] In the high-transmittance mirror photodiode described above, the substrate and the encapsulation cover are fixedly connected by a hot melt adhesive layer.

[0016] In the high-transmittance mirror photodiode described above, the conductive sheet, the first surface mount pin, and the second surface mount pin are all made of copper.

[0017] Using the above technical solution, in the high-transmittance mirror photodiode, the chip substrate is made of BT flexible resin glass fiber board.

[0018] Compared with the prior art, the present invention has the following beneficial effects:

[0019] This invention creates a large photosensitive area by arranging mirror chips in an array on a chip substrate, thereby increasing the overall photosensitive coverage of the photodiode. This allows the photodiode to capture light over a large area, effectively improving its photoelectric conversion efficiency and response speed. The light-transmitting lens on the package cover allows light to shine onto the diode crystal without obstruction, improving the photoelectric efficiency of the photodiode. In addition, the anti-reflective coating reduces light loss and effectively enhances photoelectric conversion efficiency. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] The structures, proportions, sizes, etc., shown in the accompanying drawings of this specification are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this utility model. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size, without affecting the effects and purposes that this utility model can produce, should still fall within the scope of the technical content disclosed in this utility model.

[0022] Figure 1 This is a schematic diagram of the overall structure of this utility model;

[0023] Figure 2 For Figure 1 A magnified view of a portion of region A in the middle;

[0024] Figure 3 This is a schematic diagram of the mirror chip structure of this utility model;

[0025] Figure 4 This is a schematic diagram of the exploded mirror chip of this utility model;

[0026] Figure 5 This is a schematic diagram of the bottom of the mirror chip of this utility model;

[0027] Figure 6 This is a schematic diagram of the bottom structure of the chip substrate of this utility model. Detailed Implementation

[0028] To make the utility model's objectives, features, and advantages more apparent and understandable, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described below are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present utility model.

[0029] In the description of this utility model, it should be understood that the terms "upper," "lower," "top," "bottom," "inner," and "outer," etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. It should be noted that when a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be a component centrally located at the same time.

[0030] The technical solution of this utility model will be further described below with reference to the accompanying drawings and specific embodiments.

[0031] like Figures 1 to 6 As shown, this embodiment provides a high-transmittance mirror photodiode, including a chip substrate 100 and mirror chips 200 arrayed on the chip substrate 100. By arraying the mirror chips 200 on the chip substrate 100, a large photosensitive area can be formed, thereby improving the overall photosensitive coverage of the photodiode, enabling the photodiode to capture light over a large area, effectively improving the photoelectric conversion efficiency and response speed of the photodiode. The mirror chip 200 includes a substrate 1, a diode crystal 2, a light-transmitting lens 3, an encapsulation cover 4, a conductive sheet 5, and a first surface mount pin 6. The top of the substrate 1 is connected to the diode crystal 2 through the conductive sheet 5, and the diode crystal 2 is used to sense light. The first surface mount pin 6 is located at the bottom of the substrate 1, and the conductive sheet 5 is electrically connected to a second surface mount pin 101 at the bottom of the chip substrate 100 through the first surface mount pin 6. The encapsulation cover 4 is located at the top of the substrate 1, and the encapsulation cover 4 is provided with a light-transmitting lens 3, which allows light to pass through and enter the diode crystal 2. The conductive sheet 5 is connected to the first surface mount pin 6, and then to the second surface mount pin 101 at the bottom of the chip substrate 100, so that the diode crystal 2 can achieve electrical transmission with the external circuit. The encapsulation cover 4 is disposed on the top of the substrate 1, and a light-transmitting lens 3 is provided on the encapsulation cover 4, so that light can shine on the diode crystal 2 without being blocked, thereby improving the photoelectric efficiency of the photodiode.

[0032] like Figure 5 As shown, the bottom of the substrate 1 is provided with an adhesive portion 12 that adheres to the chip substrate 100. This arrangement can improve the bonding stability between the mirror chip 200 and the chip substrate 100.

[0033] Furthermore, an encapsulating colloid is filled between the light-transmitting lens 3 and the diode crystal 2 to protect the diode crystal 2 and prevent external factors from affecting it. The encapsulating colloid also has high transparency, ensuring that light can pass smoothly into the diode crystal 2, thereby improving light transmittance and photoelectric conversion efficiency. Specifically, the encapsulating colloid is silicone or epoxy resin. In this embodiment, silicone is used. Silicone has good light transmittance and flexibility, protecting the diode crystal 2 from external environmental influences. Simultaneously, silicone's temperature resistance and UV resistance improve the stability of the photodiode during long-term operation. In addition, the flexibility of silicone allows it to adapt to temperature changes and mechanical stress, enhancing the encapsulation durability and mechanical strength of the photodiode.

[0034] like Figure 3As shown, the bottom of the substrate 1 is provided with a positioning block 11, and the bottom of the encapsulation cover 4 is provided with a positioning groove (not shown) that matches the positioning block 11. This can improve the assembly positioning efficiency of the encapsulation cover 4, reduce assembly time, and improve the encapsulation accuracy of the photodiode.

[0035] Furthermore, an anti-reflective coating is coated on the surface of the light-transmitting lens 3. The anti-reflective coating is a magnesium fluoride coating. This can effectively reduce the reflection loss of light on the surface of the light-transmitting lens 3, allowing more light to pass smoothly into the diode crystal 2, thereby improving the photoelectric conversion efficiency.

[0036] Furthermore, the substrate 1 and the encapsulation cover 4 are fixedly connected by a hot melt adhesive layer, which improves the tightness of the connection between the substrate 1 and the encapsulation cover 4 and enhances the structural stability of the entire encapsulation structure.

[0037] Furthermore, the conductive sheet 5, the first surface mount pin 6, and the second surface mount pin 101 are all made of copper. Copper has extremely low resistivity and high thermal conductivity, which can effectively improve the electrical conductivity and heat conduction performance of the photodiode.

[0038] Furthermore, the chip substrate 100 is made of BT flexible resin glass fiber board. BT flexible resin glass fiber board has good thermal stability. Compared with ordinary epoxy board, its coefficient of thermal expansion is lower and it is not easy to deform due to temperature rise or thermal stress, thereby improving the overall structural stability.

[0039] The above-described embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.

Claims

1. A high-transparency mirror photodiode, characterized by: Includes a chip substrate and a mirror chip array disposed on the chip substrate; The mirror chip includes a substrate, a diode crystal, a light-transmitting lens, a package cover, a conductive sheet, and a first surface mount pin. The top of the substrate is connected to the diode crystal via the conductive sheet, and the diode crystal is used to sense light. The first patch pin is located at the bottom of the substrate, and the conductive sheet is electrically connected to the second patch pin at the bottom of the chip substrate through the first patch pin; The encapsulation cover is located on top of the substrate, and the encapsulation cover is provided with a light-transmitting lens, which is used to allow light to pass through and enter the diode crystal.

2. The high-transparency mirror photodiode of claim 1, wherein: The bottom of the substrate is provided with an adhesive portion that adheres to the chip substrate.

3. The high-transparency mirror photodiode of claim 1, wherein: The space between the encapsulation cover and the diode crystal is filled with encapsulating colloid.

4. The high-transparency mirror photodiode of claim 1, wherein: The bottom of the substrate is provided with a positioning block, and the bottom of the encapsulation cover is provided with a positioning groove that matches the positioning block.

5. The high-transmittance mirror photodiode according to claim 3, characterized in that: The encapsulating colloid is silicone or epoxy resin.

6. The high-transmittance mirror photodiode according to claim 1, characterized in that: The surface of the light-transmitting lens is coated with an anti-reflective coating, which is a magnesium fluoride coating.

7. The high-transmittance mirror photodiode according to claim 1, characterized in that: The substrate and the encapsulation cover are fixedly connected by a hot melt adhesive layer.

8. The high-transmittance mirror photodiode according to claim 1, characterized in that: The conductive sheet, the first patch pin, and the second patch pin are all made of copper.

9. The high-transmittance mirror photodiode according to claim 1, characterized in that: The chip substrate is made of BT flexible resin glass fiber board.

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