A heating device that facilitates single crystal growth

Abstract

This utility model discloses a heating device that facilitates single crystal growth, belonging to the field of single crystal heating technology. It includes a base and a furnace body. The bottom of the furnace body passes through and is fixedly connected to the top wall of the base. A crucible is rotatably installed inside the furnace body. A heat insulation cylinder is fixedly connected to the top wall of the furnace body to prevent internal temperature leakage. It also includes a heater and a height adjustment component. The heater is fitted around the crucible. The height adjustment component includes a ring, a screw, and a screw sleeve. The top of the ring is fixedly connected to the bottom of the heater, and one end of the bottom of the ring is fixedly connected to the top of the screw. This heating device, which facilitates single crystal growth, allows for adjustment of the heater height through the height adjustment component, ensuring the heater height is always controlled within a suitable range. This solves the problem that most existing single crystal heating devices are inconvenient to adjust the heater height, have poor control over the single crystal thermal field, and are prone to causing thermal stress defects in the crystal rod.

Description

Technical Field

[0001] This utility model relates to the field of single crystal heating technology, specifically to a heating device that facilitates single crystal growth. Background Technology

[0002] Single crystal furnaces are crucial equipment for manufacturing single crystal materials, widely used in industries such as semiconductors, photovoltaics, and electronic displays. A single crystal thermal field refers to the temperature distribution area formed within the furnace by heating devices. It is one of the core technologies used in high-temperature environments (such as semiconductor manufacturing and silicon single crystal growth), aiming to reduce thermal stress and crystal defects through optimized thermal field structure, and is vital to the crystal growth process.

[0003] The thermal field of a single crystal furnace typically decreases in temperature from bottom to top, forming a temperature gradient. The main goal of this design is to ensure a uniform temperature distribution within the furnace, avoiding localized overheating or undercooling. This reduces internal defects and structural instability in the crystal, helps control the crystal growth rate, and prevents the crystal from cracking due to excessive temperature differences during cooling.

[0004] Most existing single crystal heating devices are not convenient for adjusting the height of the heater, thus making it difficult to control the distribution of the single crystal thermal field. This leads to thermal stress defects in the crystal rod, which directly affects the nucleation and growth rate of the single crystal. Utility Model Content

[0005] The purpose of this invention is to provide a heating device that facilitates single crystal growth, which can adjust the height of the heater to stabilize the thermal field distribution and improve the crystal pulling quality.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] A heating device for single crystal growth is provided, including a base and a furnace body. The bottom of the furnace body passes through the top wall of the base and is fixedly connected thereto. A crucible is rotatably installed in the furnace body. A heat insulation cylinder is fixedly connected to the top wall of the furnace body to prevent the internal temperature of the furnace body from leaking out. The device also includes a heater and a height adjustment component. The heater is sleeved around the crucible. The height adjustment component includes a ring, a screw, and a screw sleeve. The top of the ring is fixedly connected to the bottom of the heater. One end of the bottom of the ring is fixedly connected to the top of the screw. The screw passes through the bottom wall of the furnace body and is slidably connected thereto. The top of the screw sleeve is rotatably connected to the bottom of the furnace body. The screw passes through the screw sleeve and is threadedly connected thereto. The distance from the lower edge of the heat insulation cylinder to the upper edge of the heater is 80-150 mm.

[0008] Furthermore, the height adjustment assembly also includes a pair of bevel gears, a rotating shaft, a rotating seat, a turntable, a locking mechanism, and a stabilizing lifting mechanism. The two bevel gears are coaxially connected to the outer periphery of the bottom of the screw sleeve and one end of the rotating shaft, respectively. The top of the rotating seat is fixedly connected to the bottom of the furnace body. The rotating shaft passes through the rotating seat and is rotatably connected to it. The other end of the rotating shaft is coaxially connected to the turntable. The locking mechanism and the stabilizing lifting mechanism are both installed on the furnace body. The locking mechanism is used to fix the height of the heater, and the stabilizing lifting mechanism is used to make the heater rise and fall stably.

[0009] Furthermore, the locking mechanism includes a ratchet, a pawl, an L-shaped rod, and a U-shaped locking block. The ratchet is coaxially connected to the outer periphery of the rotating shaft, the bottom of the pawl engages with the outer periphery of the ratchet, the bottom of the L-shaped rod is fixedly connected to the top of the pawl, the L-shaped rod passes through the rotating seat and slides with it, one end of the U-shaped locking block is fixedly connected to the rotating seat, and the L-shaped rod engages with the inner wall of the U-shaped locking block.

[0010] Furthermore, the stabilizing lifting mechanism includes a slide rod, a sleeve, and a spring. The top of the slide rod is fixedly connected to the other end of the bottom of the ring, the top of the sleeve is fixedly connected to the bottom of the furnace body, the bottom of the slide rod passes through the bottom wall of the furnace body and is slidably connected to the sleeve, one end of the spring is fixedly connected to the bottom of the slide rod, and the other end of the spring is fixedly connected to the bottom wall of the sleeve.

[0011] Furthermore, a heat shield is fixedly connected to the bottom of the insulation cylinder. The heat shield is fitted around the heater. Multiple limiting plates are distributed circumferentially on the inner wall of the heat shield and fixedly connected to it. The top of the limiting plate abuts against the bottom of the heater. The bottom of the heat shield is fixedly connected to the bottom wall of the furnace body. The ring is slidably connected to the inner wall of the heat shield. The top of the ring abuts against the bottom of the limiting plate.

[0012] Furthermore, a heat exchanger is installed on the top of the crucible, and the top of the heat exchanger is fixedly connected to the top wall of the furnace body. The heat exchanger is sleeved around the crystal rod. The insulation cylinder and the heater are both sleeved around the heat exchanger. The upper edge of the heater is higher than the upper edge of the crucible, and the lower edge of the heater is lower than the upper edge of the crucible.

[0013] The beneficial effects of this invention are as follows: By incorporating a screw sleeve, a screw rod, and a ring, this invention allows for temperature adjustment during crystal pulling. Rotating the screw sleeve at the bottom of the furnace, through the threaded transmission between the sleeve and the screw rod, drives the ring to lift the heater, thereby adjusting the heater's height to accommodate different dosages of silicon material. Simultaneously, it controls the height of the heater's upper edge to remain 80-150mm from the lower edge of the insulation tank, ensuring a stable temperature gradient across the entire thermal field and sufficient airflow, thus providing a uniform and stable temperature environment for crystal growth. Attached Figure Description

[0014] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments of this utility model will be briefly described below. Obviously, the drawings described below are merely some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0015] Figure 1 This is a schematic diagram of the overall structure of the present invention. Figure 1 ;

[0016] Figure 2 This is a schematic diagram of the overall structure of the present invention. Figure 2 ;

[0017] Figure 3 This is a cross-sectional view of the furnace body structure of this utility model;

[0018] Figure 4 This is an exploded view of the stable lifting mechanism of this utility model;

[0019] Figure 5 This is an exploded view of the locking mechanism structure of this utility model;

[0020] Figure 6 for Figure 2 Enlarged view of the structure at point A in the middle.

[0021] In the picture:

[0022] 1. Base; 10. Furnace body; 11. Crucible; 12. Insulation cylinder; 13. Heater; 14. Heat shield; 15. Limiting plate; 16. Heat exchanger; 17. Crystal rod;

[0023] 2. Height adjustment assembly; 20. Ring; 21. Screw; 22. Screw sleeve; 23. Bevel gear; 24. Shaft; 25. Rotating seat; 26. Turntable;

[0024] 3. Locking mechanism; 30. Ratchet; 31. Pawl; 32. L-shaped lever; 33. U-shaped catch;

[0025] 4. Stabilizing lifting mechanism; 40. Slide rod; 41. Sleeve; 42. Spring. Detailed Implementation

[0026] The technical solution of this utility model will be further described below with reference to the accompanying drawings and specific embodiments.

[0027] The accompanying drawings are for illustrative purposes only and are schematic diagrams, not actual images. They should not be construed as limiting the scope of this patent. To better illustrate the embodiments of this utility model, some components in the drawings may be omitted, enlarged, or reduced, and do not represent the actual dimensions of the product. It is understandable to those skilled in the art that some well-known structures and their descriptions may be omitted in the drawings.

[0028] Reference Figures 1 to 6 The heating device shown is conducive to single crystal growth and includes a base 1 and a furnace body 10. The bottom of the furnace body 10 passes through the top wall of the base 1 and is fixedly connected to it. The crucible 11 is rotatably installed inside the furnace body 10. A heat insulation cylinder 12 is fixedly connected to the top wall of the furnace body 10 to prevent the internal temperature of the furnace body 10 from leaking out. It also includes a heater 13 and a height adjustment component 2. The heater 13 is sleeved around the crucible 11. The height adjustment component 2 includes a ring 20, a screw 21 and a screw sleeve 22. The top of the ring 20 is fixedly connected to the bottom of the heater 13. One end of the bottom of the ring 20 is fixedly connected to the top of the screw 21. The screw 21 passes through the bottom wall of the furnace body 10 and is slidably connected to it. The top of the screw sleeve 22 is rotatably connected to the bottom of the furnace body 10. The screw 21 passes through the screw sleeve 22 and is threadedly connected to it. The distance from the lower edge of the heat insulation cylinder 12 to the upper edge of the heater 13 is 80-150mm.

[0029] During the crystal pulling process, the height of the heater 13 can be adjusted using the height adjustment component 2. Rotating the screw sleeve 22 at the bottom of the furnace body 10 causes the ring 20 to move upwards via the threaded transmission between the screw sleeve 22 and the screw 21. The ring 20 lifts the heater 13, raising it within the furnace body 10. This ensures that the heating element of the heater 13 remains above or below the surface of the molten silicon in the crucible 11, accommodating heating requirements for different dosages of silicon. Simultaneously, the height of the upper edge of the heater 13 is controlled to remain 80-150mm from the lower edge of the insulation container, ensuring a stable temperature gradient throughout the thermal field and sufficient airflow, providing a uniform and stable temperature environment for crystal growth.

[0030] like Figures 2 to 4 As shown, the height adjustment assembly 2 also includes a pair of bevel gears 23, a rotating shaft 24, a rotating seat 25, a turntable 26, a locking mechanism 3, and a stabilizing lifting mechanism 4. The two bevel gears 23 are coaxially connected to the bottom periphery of the screw sleeve 22 and one end of the rotating shaft 24, respectively. The top of the rotating seat 25 is fixedly connected to the bottom of the furnace body 10. The rotating shaft 24 passes through the rotating seat 25 and is rotatably connected to it. The other end of the rotating shaft 24 is coaxially connected to the turntable 26. The locking mechanism 3 and the stabilizing lifting mechanism 4 are both installed on the furnace body 10. The locking mechanism 3 is used to fix the height of the heater 13, and the stabilizing lifting mechanism 4 is used to stabilize the lifting of the heater 13.

[0031] Rotating the turntable 26 causes the rotating shaft 24 to rotate within the rotating seat 25, simultaneously driving one of the bevel gears 23 to rotate. Through the meshing transmission between the two bevel gears 23, the screw sleeve 22 is driven to rotate at the bottom of the furnace body 10. Thus, through the threaded transmission between the screw sleeve 22 and the screw 21, the screw 21 is driven to slide up and down through the bottom wall of the furnace body 10, thereby achieving the height adjustment of the heater 13.

[0032] like Figures 2 to 5 As shown, the locking mechanism 3 includes a ratchet 30, a pawl 31, an L-shaped rod 32, and a U-shaped locking block 33. The ratchet 30 is coaxially connected to the outer periphery of the rotating shaft 24. The bottom of the pawl 31 is engaged with the outer periphery of the ratchet 30. The bottom of the L-shaped rod 32 is fixedly connected to the top of the pawl 31. The L-shaped rod 32 passes through the rotating seat 25 and is slidably connected to it. One end of the U-shaped locking block 33 is fixedly connected to the rotating seat 25. The L-shaped rod 32 is engaged with the inner wall of the U-shaped locking block 33.

[0033] When adjusting the height of heater 13, rotate the L-shaped rod 32 so that one end engages with the inner wall of the U-shaped block 33. At this time, the pawl 31 separates from the ratchet 30, and the shaft 24 can rotate freely. When heater 13 is raised to a suitable height, rotate the L-shaped rod 32 so that it separates from the U-shaped block 33. At this time, the L-shaped rod 32 slides downward under the action of gravity, so that the pawl 31 and the outer periphery of the ratchet 30 engage with each other, thereby preventing the shaft 24 from rotating and fixing heater 13.

[0034] like Figures 1 to 3 As shown, the stabilizing lifting mechanism 4 includes a slide rod 40, a sleeve 41, and a spring 42. The top of the slide rod 40 is fixedly connected to the other end of the bottom of the ring 20. The top of the sleeve 41 is fixedly connected to the bottom of the furnace body 10. The bottom of the slide rod 40 passes through the bottom wall of the furnace body 10 and is slidably connected to the sleeve 41. One end of the spring 42 is fixedly connected to the bottom of the slide rod 40, and the other end of the spring 42 is fixedly connected to the bottom wall of the sleeve 41.

[0035] The spring 42 is always in a compressed state. When the ring 20 is lifted by the screw 21, the ring 20 drives the slide bar 40 to slide upward along the sleeve 41. At the same time, the spring 42 rebounds and pushes the slide bar 40 to slide upward. The thrust provided by the spring 42 to the slide bar 40 balances the forces at both ends of the ring 20, thereby stabilizing the lifting.

[0036] like Figures 3 to 4 As shown, a heat shield 14 is fixedly connected to the bottom of the heat insulation cylinder 12. The heat shield 14 is sleeved around the heater 13. Multiple limiting plates 15 are distributed circumferentially on the inner wall of the heat shield 14 and fixedly connected thereto. The top of the limiting plate 15 abuts against the bottom of the heater 13. The bottom of the heat shield 14 is fixedly connected to the bottom wall of the furnace body 10. The ring 20 is slidably connected to the inner wall of the heat shield 14. The top of the ring 20 abuts against the bottom of the limiting plate 15.

[0037] A heat exchanger 16 is provided on the top of the crucible 11. The top of the heat exchanger 16 is fixedly connected to the top wall of the furnace body 10. The heat exchanger 16 is sleeved around the crystal rod 17. The heat insulation cylinder 12 and the heater 13 are both sleeved around the heat exchanger 16. The upper edge of the heater 13 is higher than the upper edge of the crucible 11, and the lower edge of the heater 13 is lower than the upper edge of the crucible 11.

[0038] Both the heat shield 14 and the insulation cylinder 12 are common components inside single crystal furnaces in the prior art. The heat shield 14 and the insulation cylinder 12 work together to seal the furnace body 10 and ensure that the internal temperature does not leak out. The height of the heater 13 is limited by multiple limiting plates 15 fixedly installed on the inner wall of the heat shield 14, so that it is always kept within a range of 80-150mm between the upper edge and the lower edge of the insulation cylinder. This can stabilize the temperature gradient of the single crystal thermal field and ensure sufficient airflow.

[0039] It should be stated that the above-described specific embodiments are merely preferred embodiments of this utility model and the technical principles employed. Those skilled in the art should understand that various modifications, equivalent substitutions, and variations can be made to this utility model. However, such variations, as long as they do not depart from the spirit of this utility model, should be within the protection scope of this utility model. Furthermore, some terminology used in this application specification and claims is not limiting, but merely for ease of description.

Claims

1. A heating device for single crystal growth, comprising a base (1) and a furnace body (10), the bottom of the furnace body (10) penetrating through the top wall of the base (1) and fixedly connected therewith, a crucible (11) rotatably installed in the furnace body (10), and a heat preservation cylinder (12) fixedly connected to the top wall of the furnace body (10) and used for preventing the internal temperature of the furnace body (10) from leaking out, characterized in that, It also includes a heater (13) and a height adjustment assembly (2). The heater (13) is fitted around the crucible (11). The height adjustment assembly (2) includes a ring (20), a screw (21) and a screw sleeve (22). The top of the ring (20) is fixedly connected to the bottom of the heater (13). One end of the bottom of the ring (20) is fixedly connected to the top of the screw (21). The screw (21) passes through the bottom wall of the furnace body (10) and is slidably connected to it. The top of the screw sleeve (22) is rotatably connected to the bottom of the furnace body (10). The screw (21) passes through the screw sleeve (22) and is threadedly connected to it. The distance from the lower edge of the insulation cylinder (12) to the upper edge of the heater (13) is 80-150mm.

2. The heating device for single crystal growth according to claim 1, characterized in that, The height adjustment assembly (2) also includes a pair of bevel gears (23), a rotating shaft (24), a rotating seat (25), a turntable (26), a locking mechanism (3), and a stabilizing lifting mechanism (4). The two bevel gears (23) are coaxially connected to the bottom periphery of the screw sleeve (22) and one end of the rotating shaft (24), respectively. The top of the rotating seat (25) is fixedly connected to the bottom of the furnace body (10). The rotating shaft (24) passes through the rotating seat (25) and is rotatably connected to it. The other end of the rotating shaft (24) is coaxially connected to the turntable (26). The locking mechanism (3) and the stabilizing lifting mechanism (4) are both installed on the furnace body (10). The locking mechanism (3) is used to fix the height of the heater (13), and the stabilizing lifting mechanism (4) is used to stabilize the lifting of the heater (13).

3. The heating device for single crystal growth according to claim 2, characterized in that, The locking mechanism (3) includes a ratchet (30), a pawl (31), an L-shaped rod (32), and a U-shaped locking block (33). The ratchet (30) is coaxially connected to the outer periphery of the rotating shaft (24). The bottom of the pawl (31) is engaged with the outer periphery of the ratchet (30). The bottom of the L-shaped rod (32) is fixedly connected to the top of the pawl (31). The L-shaped rod (32) passes through the rotating seat (25) and is slidably connected to it. One end of the U-shaped locking block (33) is fixedly connected to the rotating seat (25). The L-shaped rod (32) is engaged with the inner wall of the U-shaped locking block (33).

4. The heating device for single crystal growth according to claim 2, characterized in that, The stabilizing lifting mechanism (4) includes a slide rod (40), a sleeve (41) and a spring (42). The top of the slide rod (40) is fixedly connected to the other end of the bottom of the ring (20). The top of the sleeve (41) is fixedly connected to the bottom of the furnace body (10). The bottom of the slide rod (40) passes through the bottom wall of the furnace body (10) and is slidably connected to the sleeve (41). One end of the spring (42) is fixedly connected to the bottom of the slide rod (40), and the other end of the spring (42) is fixedly connected to the bottom wall of the sleeve (41).

5. The heating device for single crystal growth according to claim 1, characterized in that, A heat shield (14) is fixedly connected to the bottom of the heat insulation cylinder (12). The heat shield (14) is sleeved around the heater (13). Multiple limiting plates (15) are distributed in a circle on the inner wall of the heat shield (14) and fixedly connected to it. The top of the limiting plate (15) abuts against the bottom of the heater (13). The bottom of the heat shield (14) is fixedly connected to the bottom wall of the furnace body (10). The ring (20) is slidably connected to the inner wall of the heat shield (14). The top of the ring (20) abuts against the bottom of the limiting plate (15).

6. The heating device for single crystal growth according to claim 5, characterized in that, A heat exchanger (16) is provided on the top of the crucible (11). The top of the heat exchanger (16) is fixedly connected to the top wall of the furnace body (10). The heat exchanger (16) is sleeved around the crystal rod (17). The heat insulation cylinder (12) and the heater (13) are both sleeved around the heat exchanger (16). The upper edge of the heater (13) is higher than the upper edge of the crucible (11), and the lower edge of the heater (13) is lower than the upper edge of the crucible (11).

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