A special gas system for PECVD equipment

Abstract

This invention provides a special gas system for PECVD equipment, comprising a substrate and several special gas supply pipes disposed on the substrate; a special gas mixing pipe is provided on the substrate, with the inlet end of the special gas supply pipe connected to an external gas source and the outlet end connected to the special gas mixing pipe; each special gas supply pipe is equipped with a control component for controlling the mass flow rate of the process gas delivered by the corresponding special gas supply pipe; this invention sets up multiple special gas supply pipes, which are connected to different types of process gas sources, and the control component controls the corresponding special gas supply pipe to deliver the required type and mass flow rate of process gas to the special gas mixing pipe, thereby preparing the required film material; this special gas system has strong process compatibility, and the process gas can be freely configured according to requirements. When preparing other film materials, only the type and mass flow rate of the delivered process gas need to be adjusted by the control component, making operation simple and convenient.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, specifically to a special gas system for PECVD equipment. Background Technology

[0002] PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment primarily utilizes microwaves or radio frequencies to ionize a gas containing the atoms of the thin film components, forming a localized plasma. Due to the high chemical reactivity of the plasma, reactions readily occur, allowing the deposition of the desired thin film on the substrate. PECVD-deposited thin films exhibit excellent electrical properties, good substrate adhesion, and excellent step coverage, and are widely used in integrated circuits, electronic devices, MEMS, and other fields.

[0003] Currently, traditional PECVD equipment requires evacuating the reaction chamber before filling it with a mixture of process gases to prepare film materials. Finally, a radio frequency (RF) system discharges the RF gas to generate plasma, which is then deposited onto the workpiece to form the desired thin film. However, when preparing other film materials, the mixed gas source connected to the reaction chamber needs to be replaced, which is not only cumbersome but also prone to wasting process gases. Utility Model Content

[0004] The technical problem to be solved by this utility model is to overcome the defects of the prior art and provide a special gas system for PECVD equipment that can freely configure process gases according to needs to improve process compatibility.

[0005] The technical solution of this utility model is to provide a special gas system for PECVD equipment with the following structure: including a substrate and a plurality of special gas supply pipes disposed on the substrate; the substrate is provided with a special gas mixing pipe, the inlet end of the special gas supply pipe is connected to an external gas source, and the outlet end is connected to the special gas mixing pipe; each special gas supply pipe is provided with a control component for controlling the mass flow rate of the process gas delivered by the corresponding special gas supply pipe.

[0006] With the above structure, the special gas system for PECVD equipment in this invention has the following advantages compared with the prior art:

[0007] This invention features multiple specialty gas supply pipelines connected to different types of process gas sources. A control component regulates the supply of the required process gas type and flow rate from the corresponding specialty gas supply pipeline to the specialty gas mixing pipeline, thereby preparing the desired membrane material. This specialty gas system boasts strong process compatibility, allowing for flexible configuration of process gases according to requirements. When preparing other membrane materials, only the type and flow rate of the supplied process gas need to be adjusted via the control component, making operation simple and convenient.

[0008] Preferably, the control component includes a first on / off control valve and a mass flow controller. The first on / off control valve controls the opening and closing of the specialty gas supply pipeline, and the mass flow controller controls the mass flow rate of the process gas supplied from the specialty gas supply pipeline to the specialty gas mixing pipeline. The mass flow controller can accurately measure and control the mass flow rate of the process gas, not only functioning as a mass flow meter but also automatically controlling the gas flow rate. Even with system pressure fluctuations or changes in ambient temperature, it can maintain the flow rate at a set value, providing a suitable reaction atmosphere for the process reaction.

[0009] Preferably, the first switch control valve includes a manual diaphragm valve and a pneumatic diaphragm valve, which are connected in series on the special gas supply pipeline and located on both sides of the mass flow controller.

[0010] Preferably, a pressure reducing valve is also connected to the special gas supply pipeline. The pressure reducing valve is located on the side of the special gas supply pipeline near the inlet end and is used to regulate the pressure of the process gas input from an external gas source. The pressure reducing valve can regulate the pressure at the inlet of the special gas supply pipeline and, relying on the energy of the medium itself, automatically maintain a stable outlet pressure.

[0011] Preferably, the special gas mixing pipeline consists of two sets, arranged parallel to each other on the substrate; one end of the special gas supply pipeline near the special gas mixing pipeline is connected to two branch pipelines, each branch pipeline being connected to one of the special gas mixing pipelines; each branch pipeline is connected to the control component for controlling the mass flow rate of the process gas delivered by the corresponding branch pipeline. This configuration allows for the simultaneous delivery of process gas to two reaction chambers, thereby improving production efficiency.

[0012] Preferably, a plurality of the special gas supply pipes are spaced apart along the width direction of the substrate, and the special gas supply pipes extend along the height direction of the substrate and are perpendicular to the extension direction of the special gas mixing pipe.

[0013] Preferably, the substrate is also connected to a nitrogen delivery pipe, which is connected to one of the special gas supply pipes for filling the reaction chamber of the PECVD equipment with nitrogen.

[0014] Preferably, the nitrogen delivery pipeline is equipped with a second switch control valve for controlling the opening and closing of the nitrogen delivery pipeline. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of this utility model.

[0016] Figure 2 This is a schematic diagram of the structure of this utility model from the rear view.

[0017] Figure 3 for Figure 1 A magnified view of a portion of the image.

[0018] Explanation of reference numerals in the attached figures:

[0019] 1. Substrate; 2. Special gas supply pipeline; 21. Branch pipeline; 3. Special gas mixing pipeline; 4. Control components; 41. First switch control valve; 42. Mass flow controller; 5. Pressure reducing valve; 6. Nitrogen delivery pipeline; 61. Second switch control valve. Detailed Implementation

[0020] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.

[0021] In the description of this utility model, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. At the same time, the terms "first", "second", etc., are only used to distinguish the names of various components and do not have a primary or secondary relationship. Therefore, they should not be construed as limitations on this utility model.

[0022] like Figures 1-3 As shown, this utility model discloses a special gas system for PECVD equipment: including a substrate 1 and a plurality of special gas supply pipes 2 disposed on the substrate 1; a special gas mixing pipe 3 is provided on the substrate 1, the inlet end of the special gas supply pipe 2 is connected to an external gas source, and the outlet end is connected to the special gas mixing pipe 3; each special gas supply pipe 2 is provided with a control component 4 for controlling the mass flow rate of the process gas transported by the corresponding special gas supply pipe 2.

[0023] This invention features multiple specialty gas supply pipelines 2, each connected to a different process gas source (e.g., N2, Ar, SiH4, NH3, N2O, H2, TMB, PH3, CH4, CO2, etc.). A control component 4 controls the supply of the required process gas type and flow rate from the corresponding specialty gas supply pipeline 2 to the specialty gas mixing pipeline 3, thereby preparing the desired membrane material. When changing the type of membrane material being prepared, simply adjusting the type and flow rate of the supplied process gas via the control component 4 is sufficient, making the operation simple and convenient.

[0024] Control component 4 includes a first on / off control valve 41 and a mass flow controller 42. The first on / off control valve 41 includes a manual diaphragm valve and a pneumatic diaphragm valve connected in series on the special gas supply pipeline 2. The manual diaphragm valve and the pneumatic diaphragm valve are located on both sides of the mass flow controller 42, respectively, and are used to control the on / off state of the special gas supply pipeline 2. The mass flow controller 42 can accurately measure and control the mass flow rate of the process gas supplied from the special gas supply pipeline 2 to the special gas mixing pipeline 3. It not only has the function of a mass flow meter, but also can automatically control the gas flow rate, maintaining the flow rate at the set value even if the system pressure fluctuates or the ambient temperature changes.

[0025] A pressure reducing valve 5 is also connected to the special gas supply pipeline 2. The pressure reducing valve 5 is located on the side of the special gas supply pipeline 2 near the inlet end and is used to regulate the pressure of the process gas input from the external gas source. The pressure reducing valve 5 can regulate the pressure at the inlet of the special gas supply pipeline 2 and, relying on the energy of the medium itself, automatically maintain a stable outlet pressure.

[0026] The special gas system of this invention, through the cooperation of pressure reducing valve 5, manual diaphragm valve, pneumatic diaphragm valve and mass flow controller 42, can achieve high-precision and stable delivery and control of process gas, providing a reaction atmosphere environment for process reactions.

[0027] Two sets of special gas mixing pipes 3 are arranged parallel to each other on the substrate 1. Several special gas supply pipes 2 are spaced apart along the width direction of the substrate 1 and extend along the height direction of the substrate 1, perpendicular to the extension direction of the special gas mixing pipes 3. Two branch pipes 21 are connected to one end of the special gas supply pipe 2 near the special gas mixing pipe 3, and each branch pipe 21 is connected to one of the special gas mixing pipes 3. A control component 4 is connected to each branch pipe 21 to control the mass flow rate of the process gas delivered by the corresponding branch pipe 21. In this way, the two special gas mixing pipes 3 can simultaneously deliver process gas to two reaction chambers, thereby improving production efficiency.

[0028] Each set of special gas mixing pipelines 3 also has a spare special gas mixing pipeline, which is connected to part of the special gas supply pipeline 2 and can be used as a backup pipeline when needed.

[0029] Because a small amount of gas may remain in the PECVD equipment's vacuum system during vacuuming, affecting the composition of the process gas in the reaction chamber, this invention includes a nitrogen delivery pipe 6 connected to the substrate 1. The nitrogen delivery pipe 6 is connected to one of the special gas supply pipes 2, allowing nitrogen to be directly and independently supplied to the PECVD equipment's reaction chamber. A second switch control valve 61 is provided on the nitrogen delivery pipe 6 to control its on / off state.

[0030] The above description is only a specific embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this utility model should be included within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the protection scope of the claims.

Claims

1. A specialty gas system for a PECVD apparatus, characterized by: It includes a substrate (1) and several special gas supply pipes (2) disposed on the substrate (1); a special gas mixing pipe (3) is provided on the substrate (1), the inlet end of the special gas supply pipe (2) is connected to an external gas source, and the outlet end is connected to the special gas mixing pipe (3); each special gas supply pipe (2) is provided with a control component (4) for controlling the mass flow rate of the process gas transported by the corresponding special gas supply pipe (2).

2. The specialty gas system for a PECVD apparatus according to claim 1, wherein: The control component (4) includes a first switch control valve (41) and a mass flow controller (42). The first switch control valve (41) is used to control the opening and closing of the special gas supply pipeline (2), and the mass flow controller (42) is used to control the mass flow rate of the process gas delivered from the special gas supply pipeline (2) to the special gas mixing pipeline (3).

3. The specialty gas system for a PECVD apparatus of claim 2, wherein: The first switch control valve (41) includes a manual diaphragm valve and a pneumatic diaphragm valve, which are connected in series on the special gas supply pipeline (2).

4. The specialty gas system for a PECVD apparatus of claim 1, wherein: A pressure reducing valve (5) is also connected to the special gas supply pipeline (2). The pressure reducing valve (5) is located on the side of the special gas supply pipeline (2) near the gas inlet end and is used to adjust the pressure of the process gas input from the external gas source.

5. The specialty gas system for a PECVD apparatus of claim 1, wherein: The special gas mixing pipe (3) consists of two sets and is arranged in parallel on the substrate (1); the special gas supply pipe (2) is connected to two branch pipes (21) at one end near the special gas mixing pipe (3), and the two branch pipes (21) are respectively connected to one of the special gas mixing pipes (3); each branch pipe (21) is connected to the control component (4) for controlling the mass flow rate of the process gas transported by the corresponding branch pipe (21).

6. The specialty gas system for a PECVD apparatus of claim 5, wherein: Several special gas supply pipes (2) are spaced apart along the width direction of the substrate (1), and the special gas supply pipes (2) extend along the height direction of the substrate (1) and are perpendicular to the extension direction of the special gas mixing pipe (3).

7. The specialty gas system for a PECVD apparatus of claim 1, wherein: The substrate (1) is also connected to a nitrogen delivery pipe (6), which is connected to one of the special gas supply pipes (2) for filling the reaction chamber of the PECVD equipment with nitrogen.

8. The specialty gas system for a PECVD apparatus of claim 7, wherein: The nitrogen delivery pipeline (6) is equipped with a second switch control valve (61) for controlling the opening and closing of the nitrogen delivery pipeline (6).

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