Power module and electric machine controller, drive assembly and vehicle comprising same

Abstract

This application provides a power module and a motor controller, drive assembly, and vehicle including the same, belonging to the technical field of vehicle drive control. The power module includes a drive submodule and a generator module; the drive submodule includes a first converter bridge circuit configured to be connected to a drive motor; the generator module includes a second substrate and a second converter bridge circuit disposed on the second substrate; the second converter bridge circuit is configured to be connected to a generator. The power module provided by this application integrates the drive module and the generator module.

Description

[0001] This application claims priority to Chinese Patent Application No. 202520406059.4, filed on March 7, 2025, entitled "Power Module and Motor Controller, Drive Assembly and Vehicle Including the Thereof", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the technical field of vehicle drive control, and more specifically, to a power module and a motor controller, drive assembly and vehicle including the power module. Background Technology

[0003] With industrial advancements, hybrid vehicles have gained widespread popularity due to their combination of the advantages of traditional gasoline vehicles and new energy vehicles. The drive module and power generation module are crucial components of the electronic control system in hybrid vehicles.

[0004] To meet the performance requirements of hybrid vehicles, existing technologies employ a split architecture, designing the drive module and power generation module as two independent modules. The overall control system design must consider the production, installation, and assembly processes of these two independent modules. Existing technologies use independent half-bridge modules to form the drive and power generation modules, resulting in a large overall volume and a long housing along the arrangement of the independent half-bridges. Furthermore, the size of the drive and power generation modules determines the area of ​​the printed circuit board (PCB). In traditional processes, the PCB needs to be mounted on the power module, therefore the PCB's area and shape must be adapted to the power module. Simultaneously, the presence of auxiliary circuits in the electronic control module further increases the PCB size, requiring it to be at least larger than the power module. In addition, the increased area of ​​the drive and power generation modules leads to problems such as higher flow resistance in the cooling system's water channel structure, higher sealing requirements, higher costs, and lower space utilization.

[0005] Therefore, it is urgent to optimize the module design to reduce the size of the modules and the electronic control system, and reduce the cost of the electronic control system. Utility Model Content

[0006] To address the technical problem of the large overall size of the electronic control system in existing hybrid electric vehicles, embodiments of this application provide a power module and a motor controller, drive assembly, and vehicle containing the module.

[0007] In a first aspect, embodiments of this application provide a power module, including: a driving submodule and a power generation module;

[0008] The drive submodule includes a first converter bridge circuit configured to be connected to the drive motor;

[0009] The generator module includes a second liner and a second converter bridge circuit disposed on the second liner; the second converter bridge circuit is configured to be connected to the generator.

[0010] Optionally, the second converter bridge circuit is a multiphase circuit; at least two bridge arms of the second converter bridge circuit are disposed on the same second liner.

[0011] Optionally, the second converter bridge circuit is a three-phase circuit; the three arms of the second converter bridge circuit are disposed on the same second liner.

[0012] Optionally, the second converter bridge circuit is a multiphase circuit; the second converter bridge circuit includes at least one active switching chip and at least one passive freewheeling chip;

[0013] In at least one arm of the second converter bridge circuit, the ratio of the total area of ​​the passive freewheeling chip to the total area of ​​the active switching chip satisfies a first ratio, which is greater than or equal to 0.6.

[0014] Optionally, the first ratio is greater than or equal to 1.

[0015] Optionally, the first ratio is less than or equal to 2.

[0016] Optionally, the first ratio is less than or equal to 1.2.

[0017] Optionally, in at least one arm of the second converter bridge circuit, at least some of the passive freewheeling chips are paired with at least some of the active switching chips.

[0018] Optionally, the area ratio of at least one pair of the paired passive current-carrying chips to the active switching chip satisfies the first ratio.

[0019] Optionally, at least one arm of the second converter bridge circuit is configured to consist of two active switching chips and two passive freewheeling chips.

[0020] Optionally, the liner includes a substrate; one side surface of the substrate includes at least one conductor covering area; the at least one conductor covering area includes a first conductor covering area and a second conductor covering area that are insulated from each other; each of at least one bridge arm of the second converter bridge circuit includes an upper bridge arm and a lower bridge arm;

[0021] In this circuit, the active switching chip and the passive freewheeling chip in the upper arm of at least two bridge arms of the second converter bridge circuit are electrically connected to the first conductor coverage area; the active switching chip and the passive freewheeling chip in the lower arm of at least two bridge arms of the second converter bridge circuit are electrically connected to the second conductor coverage area.

[0022] Optionally, the first conductor coverage area and the second conductor coverage area are spaced apart.

[0023] Optionally, the power module further includes a temperature sensor; all arms of the second converter bridge circuit share the same temperature sensor.

[0024] Optionally, in at least one arm of the second converter bridge, the active switching chip and the passive freewheeling chip in the upper arm are offset along a first direction relative to the active switching chip and the passive freewheeling chip in the lower arm, and the temperature sensor is provided at the end of the second liner opposite to the first direction.

[0025] Optionally, the power module further includes a heat dissipation module; and the drive submodule and the power generation module share the same heat dissipation module.

[0026] Optionally, the heat dissipation module includes a cooling substrate and heat dissipation fins; the heat dissipation fins are located on a first surface of the cooling substrate; and the second surface of the cooling substrate is connected to the power generation module and the drive submodule.

[0027] Optionally, along a direction perpendicular to the cooling substrate, the arrangement density of heat dissipation fins within the projection range of the drive submodule is greater than the arrangement density of heat dissipation fins within the projection range of the power generation module.

[0028] Optionally, the first converter bridge circuit is a multiphase circuit; the first converter bridge circuit includes multiple bridge arms; the multiple bridge arms are respectively disposed on multiple independent first substrates.

[0029] Optionally, at least one arm of the first converter bridge circuit is configured to consist of four active switching chips and four passive freewheeling chips.

[0030] Optionally, the thermal conductivity of the first liner is greater than 27 W / m·K.

[0031] Optionally, the first liner may comprise a silicon nitride ceramic substrate, an aluminum nitride ceramic substrate, or an alumina ceramic substrate.

[0032] Optionally, the drive submodule and the generator module share the same frame. In a second aspect, embodiments of this application also provide a motor controller, including the power module as described in any of the above embodiments.

[0033] Thirdly, embodiments of this application also provide a drive assembly, including the power module as described in any of the above embodiments.

[0034] Fourthly, embodiments of this application also provide a vehicle, characterized in that it includes a power module as described in any of the above embodiments.

[0035] The power module, motor controller, drive assembly, and vehicle included therein provided in this application embodiment have at least the following beneficial effects:

[0036] The power module provided in this application adopts an integrated design, wherein the drive submodule includes a first converter bridge circuit, the power generation module includes a second substrate, and a second converter bridge circuit disposed on the second substrate. Compared with a power generation module composed of independent half-bridges, the power generation module of this application uses a second converter bridge circuit disposed on the second substrate, which reduces the size along the arrangement direction of the power generation module and the drive module, making the overall volume of the entire power module smaller. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of this application or the background art, the accompanying drawings used in the embodiments of this application or the background art will be described below.

[0038] Figure 1 A schematic diagram of the topology of a range-extended vehicle is shown.

[0039] Figure 2 A schematic diagram of the topology of the drive module and the power generation module in the prior art is shown;

[0040] Figure 3 This shows a schematic diagram of the structure of the drive module and the power generation module in the prior art;

[0041] Figure 4 This paper shows an optional structural schematic diagram of the power module provided in an embodiment of this application;

[0042] Figure 5 This application illustrates an optional method for calculating the relationship between the power generation efficiency of a power generation module and the chip area, according to an embodiment of the present application.

[0043] Figure 6 Figure (a) shows the relationship between the on-state current and voltage drop of the active switching chip. Figure 6 (b) shows a linear fit between the on-current and voltage drop of the active switching chip;

[0044] Figure 7 (a), (b), and (c) in the figure show the magnification factors of coefficients a, b, and c, respectively;

[0045] Figure 8 (a), (b), (c), and (d) in the figure show the coefficient a. fwd b fwd a rvs and b rvs Relationship with chip area;

[0046] Figure 9The relationship between power generation efficiency and chip area, calculated based on actual operating conditions, is shown.

[0047] Figure 10 This illustration shows another optional side view of the power module provided in an embodiment of this application;

[0048] Figure 11 This illustration shows another optional structural diagram of the power module provided in an embodiment of this application;

[0049] Figure 12 This illustration shows an optional structural diagram of the heat dissipation module provided in an embodiment of this application;

[0050] Figure 13 This illustration shows another optional structural diagram of the heat dissipation module provided in an embodiment of this application;

[0051] Figure 14 This invention illustrates an optional structural diagram of a DC terminal provided in an embodiment of the present application;

[0052] Figure 15 This invention illustrates an optional structural diagram of a DC terminal provided in an embodiment of the present application;

[0053] Figure 16 This invention illustrates an optional structural diagram of a DC terminal provided in an embodiment of the present application;

[0054] Figure 17 This illustration shows another optional structural diagram of the power module provided in an embodiment of this application.

[0055] The reference numerals in the figure represent:

[0056] 1-Driver submodule; 11-Half-bridge unit; 2-Power generation module; 21-Rectifier bridge; 211-Active switching chip; 212-Passive freewheeling chip; 3-DC terminal; 31-First terminal; 32-Second terminal; 311-First segment terminal; 312-Second segment terminal; 321-Third segment terminal; 322-Fourth segment terminal; 323-Fifth segment terminal; 4-AC terminal; 5-Backing plate; 51-Substrate; 52-First copper layer; 53-Second copper layer; 54-Chip solder layer; 55-Backing plate solder layer; 6-Signal terminal; 7-Heat dissipation module; 71-Cooling substrate; 72-Heat dissipation fins; 73-Base; 74-Fluid channel; 8-Capacitor; 81-Third terminal; 82-Fourth terminal; 9-Magnetic core; 10-Temperature measuring resistor; 11-Frame. Detailed Implementation

[0057] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate preferred embodiments of the application. However, this application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0058] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0059] New energy vehicles include electric drive systems, which use electricity to propel the vehicle. Taking range-extended electric vehicles as an example, their topology is as follows: Figure 1 As shown. The core component is the range extender, whose main function is to activate when the battery charge drops to a certain level, causing the engine to drive the generator to produce electricity. Part of the generated electricity can be used to power the drive motor, and the other part can be used to charge the battery.

[0060] Range-extended electric vehicles (REEVs) offer numerous advantages, including: for daily urban commutes, they can operate on pure electric power with zero emissions, reducing exhaust pollution and meeting environmental requirements. Furthermore, electric drive is more energy-efficient than gasoline drive, lowering energy consumption and operating costs.

[0061] Range-extended electric vehicles are equipped with an engine as a range extender. When the battery is low, the engine can start to generate electricity to provide continuous power to the vehicle, avoiding the range anxiety problem caused by the limited driving range of pure electric vehicles and making long-distance travel more convenient.

[0062] In addition, range-extended electric vehicles also have the following advantages in terms of driving experience:

[0063] Pure electric drive: The range-extended topology is essentially a pure electric drive system. The vehicle's power is entirely provided by the electric motor; the engine does not directly drive the vehicle but instead acts as a generator, starting when the battery is low to convert fuel into electricity to power the electric motor or charge the battery. This pure electric drive method ensures a single and pure power source, consistent with the drive system of pure electric vehicles, fundamentally guaranteeing a comfortable driving experience.

[0064] Rapid power response: The characteristics of an electric motor allow it to output maximum torque instantly. In range-extended electric vehicles, when the driver presses the accelerator pedal, the electric motor responds immediately, quickly delivering powerful acceleration for rapid start-up and acceleration. This instantaneous power response is far superior to traditional gasoline vehicles, giving the driver a more direct and rapid push-back feeling. Whether it's frequent start-stop maneuvers in urban traffic or overtaking maneuvers on highways, it can easily handle the situation, providing a smooth driving experience.

[0065] No power interruption: Since range-extended electric vehicles are always driven by an electric motor, there is no power interruption issue like that experienced during gear shifts in traditional gasoline vehicles. Power output remains continuous and smooth at both low and high speeds. Even when the battery is low and the engine starts generating electricity, the system uses precise control strategies to ensure that the electric motor's power output is unaffected, preventing any jerking or power interruption. This provides the driver with a consistently stable driving experience, enhancing driving comfort and safety.

[0066] However, in existing technologies, the electric drive assembly of range-extended electric vehicles includes components such as a generator, a drive motor, a generator controller, and a drive motor controller. The generator controller and drive motor controller are independent components, each with its own power supply (e.g., using diodes, IGBTs, SiC semiconductors for AC-DC conversion), current sensors, temperature sensors, and motor rotor position sensors. This results in high weight, size, and cost, necessitating optimization.

[0067] Figure 2 This diagram illustrates the topology of the drive module and power generation module in an existing range-extended electric vehicle. (See also...) Figure 2 The drive module converts the direct current (DC) from the high-voltage battery into alternating current (AC) to drive the drive motor, providing torque to rotate the wheels. The generator module converts the AC output from the generator back into DC to charge the high-voltage battery or power the drive motor. Figure 2 The power generation module shown as an example is a three-phase full-bridge circuit; the drive module consists of three independent half-bridges, which can also be considered as forming a three-phase full-bridge circuit. See also Figure 2 The power generation module / drive module provided in this application (taking a 3-phase full bridge as an example) includes three bridge arms (or a bridge arm group). Each bridge arm includes an upper bridge arm and a lower bridge arm. The upper bridge arm and the lower bridge arm respectively include an active switching chip and a passive freewheeling chip connected in parallel with it. Figure 2Only one possible connection method between the wheel and the drive motor is shown. In some exemplary embodiments, the wheel and drive motor are directly connected. In still other exemplary embodiments, a single-speed reducer or reduction gear is coupled between the wheel and the drive motor.

[0068] Figure 3 This diagram illustrates the structural schematics of the drive module and power generation module in an existing range-extended electric vehicle. (For example...) Figure 3 As shown, existing drive and power generation modules both use half-bridge modules as the smallest unit. The three half-bridge modules from the left are drive modules, and the three from the right are power generation modules. These half-bridge modules are the bridge arms mentioned above, and each half-bridge module (i.e., each bridge arm) corresponds to one phase in a multi-phase full-bridge circuit (e.g., a three-phase full-bridge circuit). It can be seen that the length along the direction of the half-bridge module arrangement is relatively long. In existing technologies, the drive and power generation modules each have independent heat dissipation backplates. Because hybrid vehicles need to accommodate components such as the engine, generator, electronic control system, battery, fuel tank, and transmission system simultaneously, interior space is limited. Simply packaging the drive and power generation modules together without reducing their size will not reduce their need for interior space; on the contrary, it may lead to greater space waste and will not reduce production costs. Therefore, the integration of the drive and power generation modules requires not only integration but also miniaturization after integration.

[0069] The inventors of this application unexpectedly discovered that balancing the operating conditions and power generation efficiency of the power generation module is a crucial factor restricting the miniaturization of the power generation module in hybrid vehicles. This, in turn, restricts the integration of the drive module and the power generation module.

[0070] In view of this, such as Figure 4 As shown, this application embodiment provides a power module. The power module includes a drive submodule and a generator module. The drive submodule includes a first converter bridge circuit configured to connect to a drive motor; the generator module includes a second substrate and a second converter bridge circuit disposed on the second substrate, configured to connect to a generator motor. It is understood that the first and second converter bridge circuits are collectively referred to as converter bridges in this document. This achieves the integration of the drive submodule and the generator module. Since the drive submodule acts as an inverter when controlling the drive motor, the first converter bridge circuit will also be referred to as an inverter bridge; since the generator module acts as a rectifier when controlling the generator, the second converter bridge circuit will also be referred to as a rectifier bridge.

[0071] According to some optional implementations, the second converter bridge circuit is a multiphase circuit, and at least two arms of the second converter bridge are disposed on the same second substrate. This enables the integration and miniaturization of the generator module, thereby facilitating the integration of the generator module with the drive submodule. For example, as... Figure 4 As shown, the second converter bridge circuit is a three-phase circuit, and the three arms of the second converter bridge circuit are set on the same second liner.

[0072] Specifically, taking a power module (drive module or generator module) using an Insulated Gate Bipolar Transistor (IGBT) as an example, it includes an IGBT chip and a Fast Recovery Diode (FRD) chip. When the IGBT chip acts as an active switch, it incurs switching losses and conduction losses. At this time, there are no losses for the IGBT itself, but the FRD incurs conduction losses and reverse recovery losses. For the drive module, the main consideration is output current capability. Based on the loss distribution under different operating conditions, the IGBT loss accounts for approximately 70%, and the FRD loss accounts for approximately 30%. For the generator module, while meeting the output current capability, power generation efficiency must also be considered. Under power generation conditions, the IGBT loss accounts for 30%, and the FRD loss accounts for 70%. This leads to different design requirements for drive modules and generator modules in different application scenarios. The inventors found that the wide operating condition coverage and high dynamic load requirements of the drive module make its miniaturization difficult. The generator module, on the other hand, has a single drive condition, pursues steady-state output, and has lower dynamic response requirements. Therefore, miniaturization of the power generation module is key to the integration of the drive module and the power generation module.

[0073] Therefore, in the power module provided in this application embodiment, the second converter bridge circuit is a multiphase circuit. The second converter bridge circuit includes at least one active switching chip and at least one passive freewheeling chip. In at least one arm of the second converter bridge circuit, the ratio of the total area of ​​the passive freewheeling chip to the total area of ​​the active switching chip satisfies a first ratio, which is greater than or equal to 0.6. This reduces the losses of the second converter bridge in the power generation module under power generation conditions, allowing the second converter bridge to use a smaller chip area and reducing the number of chips used in the converter bridge.

[0074] Optionally, in at least one arm of the second converter bridge circuit, at least some passive freewheeling chips are paired with at least some active switching chips. For example, one active switching chip is paired with multiple passive freewheeling chips. Another example is that multiple active switching chips are paired with one passive freewheeling chip. Yet another example is that multiple active switching chips are paired with multiple passive freewheeling chips. According to an embodiment of this application, the area ratio of at least one pair of paired passive freewheeling chips to active switching chips in the second converter bridge circuit satisfies a first ratio. When the power generation module is in power generation mode, the ratio of the total area of ​​the passive freewheeling chips to the total area of ​​the active switching chips in at least one arm satisfies the first ratio, reducing the converter bridge loss of the power generation module, enabling the use of smaller area chips, and allowing the converter bridge to occupy a smaller area without changing the chip area, which is beneficial for the integration of the power generation module. For example, as... Figure 4 As shown, at least one arm of the second converter bridge provided in this embodiment consists of two active switching chips 214 and two passive freewheeling chips 215. Since the total area of ​​the passive freewheeling chips and the total area of ​​the active switching chips in at least one arm of the converter bridge provided in this embodiment satisfy a first ratio, the losses of the converter bridge under power generation conditions are reduced, allowing at least two arms of the converter bridge to be integrated on the same substrate.

[0075] According to the embodiments of this application, when the vehicle needs to accelerate, the drive submodule can convert the DC power output from the battery into AC power; when the vehicle needs to decelerate, the drive motor switches to generator mode, and the drive submodule rectifies the AC power into DC power. It should be understood that the hybrid vehicles in this application include range-extended electric vehicles and dual-mode intelligent hybrid vehicles (DMI).

[0076] The inventors of this application unexpectedly discovered that the area ratio of the active switching chip to the passive freewheeling chip in the power generation module 2 has a significant impact on the power generation efficiency of the power generation equipment. Furthermore, the inventors found that increasing the chip area does not necessarily lead to a continuous increase in power generation efficiency; a balance must be struck between chip area and power generation efficiency. Calculations based on power generation conditions, stall conditions, and actual application scenario requirements show that, under the same operating conditions, when the area ratio of the active switching chip to the passive freewheeling chip meets a first ratio value, the power generation efficiency is significantly improved. In other words, compared to existing power generation modules, at the same power generation efficiency, the converter bridge provided in this application has lower losses when the area ratio of the active switching chip to the passive freewheeling chip meets the first ratio value. The detailed calculation process, taking one arm of the converter bridge provided in this application as an example, is as follows.

[0077] The inventors of this application have unexpectedly discovered that the area ratio of the active switching chip to the passive freewheeling chip in the power generation module 2 has a significant impact on the power generation efficiency of the power generation equipment. In traditional power generation modules, the area of ​​the active switching chip is 1.5-2 times that of the passive freewheeling chip. Because the area of ​​the active switching chip is larger than that of the passive freewheeling chip, the power generation efficiency is relatively low. However, the inventors of this application have found that increasing the chip area does not necessarily lead to a continuous increase in power generation efficiency; a balance needs to be struck between chip area and power generation efficiency. Based on calculations of power generation operating conditions, stalled operating conditions, and actual application scenario requirements, it can be found that under the same operating conditions, when the area ratio of the active switching chip to the passive freewheeling chip meets a first ratio value, the power generation efficiency is significantly improved. In other words, compared with existing power generation modules, under the same power generation efficiency, when the area ratio of the active switching chip to the passive freewheeling chip meets the first ratio value, the second converter bridge circuit provided in this application has lower losses. This application implements... Figure 5 The calculation method shown calculates the area relationship between the passive freewheeling chip and the active switching chip. The detailed calculation process is as follows, taking one arm of the second converter bridge circuit provided in this application embodiment as an example.

[0078] According to the efficiency calculation formula:

[0079] η = P out / P in =(P in -P loss ) / P in (1)

[0080] Where η is the power generation efficiency, P in For input power, P out For output power, P loss This represents the total electrical control losses.

[0081] P loss =P1+P2+P cu (2)

[0082] Where P1 is the total loss of the active switching chip, P2 is the total loss of the passive freewheeling chip, and P... cu This refers to copper busbar losses.

[0083]

[0084] Among them, P con1 For the conduction loss of the active switching chip, P swon For the turn-on loss of the active switching chip, P swoff This refers to the turn-off loss of the active switching chip.

[0085]

[0086] Among them, Pcon2 For the conduction loss of the passive freewheeling chip, P swrec This refers to the reverse recovery loss of the passive freewheeling chip.

[0087] Therefore, the total electronic control loss can be obtained:

[0088]

[0089] Taking one electrical cycle as an example, during the positive half-cycle of the current, the upper bridge active switch chip acts as a hard switch, incurring switching losses, while the lower bridge active switch chip acts as a zero-voltage switch, incurring no switching losses. During the negative half-cycle of the current: the lower bridge active switch chip acts as a hard switch, and the upper bridge active switch chip acts as a zero-voltage switch. Therefore, integrating the switching losses over half an electrical cycle and averaging over the entire electrical cycle yields the average switching loss. The formula for calculating the average switching loss is as follows:

[0090]

[0091] Among them, P sw V is the average switching loss over one electrical cycle. DC I is the bus voltage. D For, T j The junction temperature of the active switching chip is T0, the cycle time is E. sw For, f sw This refers to the switching frequency.

[0092] The switching loss of an active switching chip can be expressed as:

[0093]

[0094] Where P swon Factor Vdcon b1 represents the turn-on loss voltage coefficient of the active switching chip. on b2 is the coefficient of the first term in the relationship between the turn-on energy coefficient and current of the active switching chip. on b3 represents the quadratic coefficient of the relationship between the turn-on energy coefficient and current for an active switching chip. on I is the coefficient of the cubic term in the relationship between the turn-on energy coefficient and current of the active switching chip. p It represents electric current.

[0095]

[0096] Where P swoff Factor Vdcoff b1 represents the turn-off loss voltage coefficient of the active switching chip. off b2 is the coefficient of the first term in the relationship between the turn-off energy coefficient and current of the active switching chip. offb3 represents the coefficient of the quadratic term in the relationship between the turn-off energy coefficient and current of an active switching chip. off I is the coefficient of the cubic term in the relationship between the turn-off energy coefficient and current of an active switching chip. p It represents electric current.

[0097] The reverse recovery loss of a passive freewheeling chip can be expressed as:

[0098]

[0099] Where P swrec Factor is used to reverse recover losses in passive freewheeling chips. Vdcrec b1 represents the reverse recovery loss voltage coefficient of the passive freewheeling chip. rec b2 is the coefficient of the first term in the relationship between the reverse recovery energy coefficient and current of a passive freewheeling chip. rec b3 represents the quadratic coefficient of the reverse recovery energy coefficient versus current relationship in a passive freewheeling chip. rec Ip is the coefficient of the cubic term in the relationship between the reverse recovery energy coefficient and the current of the passive freewheeling chip, where Ip is the current.

[0100] Copper busbar losses can be expressed as

[0101] P cu =I dc 2 *0.0002*2+I ac 2 *0.0001*6+I c 2 *0.0006 (10)

[0102] Among them, I dc For input DC current, I ac For the output phase current, I c This is the capacitor ripple current.

[0103] Furthermore, taking one electrical cycle as an example, during the positive half-cycle of the current, when the upper bridge active switch chip is turned on, the current flowing through the active switch chip generates forward conduction loss. When the active switch chip is turned off, the current flows through the lower bridge passive freewheeling chip. During the negative half-cycle of the current, when the lower bridge active switch chip is turned on, the current flowing through the active switch chip generates forward conduction loss. When the active switch chip is turned off, the current flows through the upper bridge passive freewheeling chip. Therefore, without considering the dead time, within one electrical cycle, the active switch chip only generates forward conduction loss according to the corresponding half-cycle of the current cycle. Therefore, by integrating the loss over one current cycle according to the duty cycle and averaging, the average conduction loss can be obtained. The fitting result for the upper bridge is as follows:

[0104]

[0105] Conduction loss refers to the loss of an active switching chip after it is turned on. When the active switching chip is turned on, its internal resistance changes with current and temperature; for example... Figure 6 As shown in (a) in the figure, I c and V ce The relationship is not linear; for example... Figure 6 As shown in (b) above, R 2 R is the square of the linear fit R. 2 The closer the value is to 1, the better the fit. It can be seen that when expressed in polynomial form, the fit is higher and closer to reality. At this point, the conduction loss of the active switching chip can be expressed as...

[0106]

[0107] Where m is the modulation index and D is the duty cycle.

[0108] The duty cycle D can be expressed as:

[0109]

[0110] Where θ = ωt, ω is the angular frequency, t is time; and φ is the phase difference between voltage and current.

[0111] Therefore, the result of integrating the conduction loss of the active switching chip is:

[0112] P con1 =0.0007*I p *(a fwd *I p 2 *(1440+770*m*p f -355*m*p f 3 )+b fwd *I p *(764+1829*m*p f -221*m*p f 3 )+c fwd *(2160+1957*m*p f )) (14)

[0114] Where a fwd b is the coefficient of the quadratic term in the voltage drop versus current relationship of the active switching chip. fwd c is the coefficient of the first term in the relationship between voltage drop and current of an active switching chip. fwd p is the constant term coefficient in the relationship between voltage drop and current of an active switching chip. f The power factor.

[0115] Similarly, the conduction loss of a passive freewheeling chip can be expressed as:

[0116] P con2 =0.0007*I p *(a fwd *I p 2 *(1440-770*m*p f +355*m*p f 3 )+

[0117] b fwd *I p *(764-1829*m*p f +221*m*p f 3 )+c fwd *(2160-1957*m*p f )) (14)

[0119] Among them, a rvs b is the coefficient of the quadratic term in the relationship between voltage drop and current of a passive freewheeling chip. rvs c is the coefficient of the first term in the relationship between voltage drop and current of a passive freewheeling chip. rvs This is the constant coefficient of the relationship between voltage drop and current in a passive freewheeling chip.

[0120] Since changes in the integrated circuit area have no effect on the switching losses of active switching chips and passive freewheeling chips, the switching losses of active switching chips, the reverse recovery losses of passive freewheeling chips, and the copper busbar losses can be simplified as follows:

[0121] P swon =E swon (I p U dc T j (16)

[0122] P swoff =E swoff (I p U dc T j (17)

[0123] P swrec =E swrec (I p U dc T j (18)

[0124] P cu =I p *R cu (19)

[0125] Therefore, the total dynamic loss P can be unified. sw :

[0126] P sw =P swon +P swoff +P swrec +P cu (twenty one)

[0127] Therefore, the total electronic control loss can be further expressed as:

[0128] P loss =P con1 +P con2 +P sw (twenty two)

[0129] As can be seen from the above, the analysis Figure 6 Combining (a) and (b) with formulas (12) and (14), it is found that the conduction loss is mainly related to the power factor p. f The modulation index m is related to the polynomial coefficients (a, b, c); the power factor p f The modulation index m is mainly affected by the motor. Specifically, for the total loss of the active switching chip, the coefficient a is (1440 + 770 * m * p). f -355*m*p f 3 The coefficient b is (764 + 1829 * m * p). f -221*m*p f 3 The coefficient c is (2160 + 1957 * m * p) f For the total loss of the passive freewheeling chip, the coefficient a is (1440-770*m*p). f +355*m*p f 3 The coefficient b is (764-1829*m*p). f +221*m*p f 3 The coefficient c is (2160-1957*m*p). f ).

[0130] Based on the operating condition evaluation of range-extended new energy vehicles, the power factor p f Under power generation conditions, the regulation system m determines the power factor p. f The main operating conditions are above -0.9; the regulation value m is mainly in the range of 0.3 to 0.7. Therefore, for the analysis of these special operating conditions, formulas (12) and (14) can be compared with p as follows. fThe parameters related to m are divided into amplification factors of a, b, and c, and the analysis is based on the actual parameter values. For example... Figure 7 As shown, using FRD chips and IGBT chips as examples, the amplification factors of coefficients a, b, and c of the FRD chip are much greater than those of the IGBT chip. From... Figure 7 It can be seen that under power generation conditions, the conduction loss Pcon2 of the FRD (passive freewheeling chip) is greater than the conduction loss Pcon1 of the IGBT (active switching chip). Therefore, to improve power generation efficiency, the conduction loss can be further reduced. Moreover, compared with the active switching chip, the conduction loss of the passive freewheeling chip has greater room for optimization, and reducing the loss of the passive freewheeling chip will generate greater benefits.

[0131] Combining formulas (14) and (15), a fwd and a rvs A negative number indicates that the smaller the area of ​​the active switching chip, the higher the power generation efficiency; b fwd and b rvs A negative value indicates that the larger the area of ​​the passive freewheeling chip, the higher the power generation efficiency. Figures (a), (b), (c), and (d) show the coefficient a. fwd b fwd a rvs and b rvs Relationship with chip area. Figure 9 The relationship between power generation efficiency and chip area, calculated based on the actual operating conditions of range-extended vehicles, is shown. Figure 9 (a) shows the relationship between the area ratio of the passive freewheeling chip to the active switching chip and the power generation efficiency of the power generation module under the operating conditions of a 400V range-extended hybrid vehicle. Figure 9 (b) shows the relationship between the area ratio of the passive freewheeling chip to the active switching chip and the power generation efficiency of the generator module under the operating conditions of an 800V range-extended hybrid vehicle. See also Figure 9When the area ratio is greater than or equal to 0.6, a good balance is found between efficiency and chip area. When the area ratio is less than or equal to 1, the power generation efficiency increases with the increase of the area ratio of the passive freewheeling chip and the active switching chip. When the area ratio is greater than or equal to 1 and less than or equal to 1.2, the growth trend of power generation efficiency slows down, and the growth trend slows down further after the area ratio exceeds 1.2. When the area ratio is greater than or equal to 1.2 and less than or equal to 2, the growth of power generation efficiency gradually enters a plateau period. Therefore, under the premise of meeting the output current capability, with the same chip area, the larger the area of ​​the passive freewheeling chip, the higher the power generation efficiency. When the output current capability is determined, keeping the area of ​​the active switching chip unchanged, increasing the area of ​​the passive freewheeling chip further improves the power generation efficiency. Therefore, for hybrid vehicles, controlling the ratio of the passive freewheeling chip and the active switching chip area to meet the first preset ratio can reduce the loss of the rectifier bridge, thereby reducing the loss of the power generation module. Therefore, the heat dissipation requirements of the power generation module 2 can be reduced, and the volume of the power generation module can be reduced, so that the active switching chip and the passive freewheeling module can be integrated into a smaller space. Therefore, controlling the area ratio of the passive freewheeling chip to the active switching chip in at least one arm of the second converter bridge circuit can reduce losses, allowing the converter bridge to use smaller chips while maintaining the same output current capability.

[0132] For range-extended electric vehicles, based on power generation conditions, stall conditions, and actual vehicle application scenarios, calculations show that when the ratio of the total area of ​​the passive freewheeling chip and the active switching chip in the second converter bridge circuit meets a first ratio, which is greater than or equal to 0.6, a good balance is achieved between power generation efficiency and chip area. This allows the first number of active switching chips and the second number of passive freewheeling chips to be integrated onto a smaller substrate. Therefore, while ensuring output current capability and power generation efficiency, the losses of the second converter bridge circuit are minimized, and the required heat dissipation area is minimized. Optionally, such as... Figure 9 As shown, the area ratio of at least one passive freewheeling chip to its corresponding active switching chip is greater than or equal to 0.6. Exemplarily, the first ratio is greater than or equal to 0.6 and less than or equal to 1. Further exemplarily, the first ratio is greater than or equal to 0.6 and less than or equal to 1.2. Yet another exemplarily, the ratio of the total area of ​​the passive freewheeling chips to the total area of ​​the active switching chips in the second converter bridge circuit is greater than or equal to 0.6 and less than or equal to 2. In other words, as long as there is at least one pair of paired passive freewheeling chips and active switching chips whose total area ratio satisfies the first ratio, the highest power generation efficiency can be achieved with the minimum substrate area.

[0133] According to the embodiments of this application, in the second converter bridge circuit of the control power generation module, the area ratio of the passive freewheeling chip and the active switching chip connected in parallel in at least one bridge arm satisfies a first preset ratio, reducing the loss of the second converter bridge under power generation conditions. Therefore, for the same operating conditions and design requirements, the total number of chips required is correspondingly reduced. For example, in the prior art, each phase of a three-phase power generation module includes 6 active switching chips and 6 passive freewheeling chips in its corresponding bridge arm. However, as... Figure 4 As shown in the embodiment of this application, each phase of the power generation module requires only 2 active switching chips and 2 passive freewheeling chips for each phase of the bridge arm.

[0134] Based on a similar principle, controlling the area ratio of the passive freewheeling chip to the corresponding active switching chip in the driver submodule can also reduce the loss of the driver submodule, thereby achieving miniaturization and integration of the driver submodule. Similarly, controlling the area ratio of the passive freewheeling chip to the active switching chip in the driver submodule can also reduce the loss of the driver submodule, thereby enabling the integration of the driver submodule onto a single substrate.

[0135] It should be noted that the inverter bridge in the drive module can also function as a rectifier bridge under certain operating conditions. For example, when a hybrid vehicle performs kinetic energy recovery, such as... Figure 2 As shown, the inverter bridge of the drive submodule converts the AC power generated by the drive motor into DC power to replenish the high-voltage battery.

[0136] Under the same current demand, the chip area should be maximized to avoid waste. Once the current demand is determined, the area of ​​the active switching chip will be locked. Considering both cost and size, the area of ​​the passive freewheeling chip will be maximized to reduce power generation module losses, optimize power generation efficiency, and improve driving range.

[0137] For example, such as Figure 4 As shown, a first aspect of this application provides a power module. Specifically, the integrated power device includes a drive submodule 1 (and... Figure 2 The driving module (which operates on the same principle) and the electronic module 2 (which is the same as the driving module) Figure 2 (The principle is the same for the generator module). The drive submodule 1 is configured to perform inversion or rectification according to the driving state of the hybrid vehicle; the generator module 2 is configured to rectify the AC power output from the generator of the hybrid vehicle. For example, when the vehicle needs to accelerate, the drive submodule can convert the DC power output from the battery into AC power; when the vehicle needs to decelerate, the drive motor switches to generator mode, and the drive submodule rectifies the AC power into DC power. It should be understood that the hybrid vehicle in this application includes range-extended electric vehicles and dual-mode intelligent hybrid vehicles (DMI).

[0138] The drive submodule 1 is configured to perform inversion or rectification according to the driving state of the hybrid vehicle; the power electronics module 2 includes a rectifier bridge 21. The rectifier bridge 21 includes a first number of active switching chips 211, and a second number of passive freewheeling chips 212 paired with at least a portion of the active switching chips 211. The area ratio of at least one pair of paired passive freewheeling chips 212 to the active switching chips 211 satisfies a first preset ratio to reduce rectifier bridge losses, thereby allowing the first number of active switching chips 211 and the second number of passive freewheeling chips 212 to be integrated into a smaller space. Figure 4 As shown, the rectifier bridge 21 is a full-bridge circuit. Optionally, the driver submodule 1 and the generator module 2 are arranged in parallel. It should be noted that the first and second quantities are determined by the actual design requirements. Optionally, the first quantity is equal to the second quantity. Optionally, the first quantity is greater than the second quantity. Also optionally, the first quantity is less than the second quantity.

[0139] According to embodiments of this application, the active switching chip includes a metal-oxide-semiconductor field-effect transistor (MOSFET), an insulated-gate bipolar transistor (IGBT), a silicon carbide field-effect transistor (SiC MOSFET), a gallium nitride field-effect transistor (GaN FET), and a bipolar junction transistor (BJT). In some alternative embodiments, the passive freewheeling chip includes a diode, such as an FRD or a Schottky diode. It should be understood that the diode provided in the embodiments of this application can be a silicon diode or a silicon carbide diode.

[0140] According to embodiments of this application, the first quantity and the second quantity are determined by the number of phases required by the power generation module 2. In some optional embodiments, the second quantity is equal to the first quantity. In some optional embodiments, based on requirements such as increased power level and redundancy design, the second quantity is less than the first quantity. Figure 4 As shown, the active switching chip 211 and the passive freewheeling chip 212 are arranged in pairs. For example, as... Figure 4 As shown, the driving submodule 1 includes three independent half-bridge units 11, corresponding to the U phase, V phase, and W phase from left to right, respectively. See also Figure 4 Each half-bridge unit includes the upper bridge of the half-bridge circuit. Figure 4 The 2x2 chip array shown at the upper position; the lower bridge includes Figure 4 The 2x2 chip array shown is located at the bottom.

[0141] Optionally, the rectifier bridge 21 provided in this embodiment is used to rectify the output current of the generator in a hybrid vehicle. It should be noted that the aforementioned generator refers to the generator driven by the engine in the hybrid vehicle. Compared to the generator module composed of multiple independent half-bridge modules in the prior art, the rectifier bridge 21 of the generator module 2 provided in this embodiment uses a full-bridge circuit, reducing the size along the arrangement direction of the drive module and the generator module. Similar to the drive submodule, Figure 4 The chip array positioned higher in the middle belongs to the upper bridge of rectifier bridge 21; the chip array positioned lower in the middle belongs to the lower bridge of rectifier bridge 21. For example, for three-phase alternating current, Figure 4 In the full-bridge circuit, the three columns of chips from left to right correspond to the U phase, V phase, and W phase, respectively. It should be noted that the upper and lower bridges in the half-bridge and full-bridge circuits of this application are staggered to reduce parasitic inductance.

[0142] It should be understood that the dimensions of the active switching chip and passive freewheeling chip in the driver submodule differ from those in the generator module. It should be noted that... (See also...) Figure 4 The active switching chip of the half-bridge circuit in the driving submodule and the active switching chip of the full-bridge circuit in the power generation module provided in this application embodiment are collectively referred to as active switching chips. The passive freewheeling chip of the half-bridge circuit in the driving submodule and the passive freewheeling chip of the full-bridge circuit in the power generation module provided in this application embodiment are collectively referred to as passive freewheeling chips.

[0143] According to an embodiment of this application, the first converter bridge circuit of the drive submodule is a multiphase circuit. The first converter bridge circuit includes multiple bridge arms, each of which is disposed on multiple independent first substrates. For example, as shown... Figure 4 As shown, the first converter bridge circuit is a three-phase circuit, and the three bridge arms of the three-phase circuit are respectively set on three independent first substrates.

[0144] According to embodiments of this application, the substrate provided in this embodiment includes a substrate. One side surface of the substrate includes at least one conductor covering area. An electrode of any one of a first number of active switching chips and a second number of passive freewheeling chips is electrically connected to the conductor covering area, enabling the chip to be electrically connected to the DC port of the rectifier bridge via the conductor covering area. Optionally, at least one conductor covering area includes a first conductor covering area and a second conductor covering area that are insulated from each other. The first conductor covering area and the second conductor covering area can be connected to the positive and negative terminals of the DC port, respectively. According to embodiments of this application, the first conductor covering area and the second conductor covering area are spaced apart.

[0145] According to an optional embodiment of this application, the rectifier bridge is a multi-phase full-bridge circuit. Each phase of the multi-phase full-bridge circuit includes an upper bridge arm and a lower bridge arm. The upper bridge arm is disposed in the first conductor coverage area, and the lower bridge arm is disposed in the second conductor coverage area. Optionally, the collector of the active switching chip of the upper bridge arm is electrically connected to the first conductor coverage area; the cathode of the passive freewheeling chip of the upper bridge arm is electrically connected to the first coverage area. Alternatively, the emitter of the active switching chip of the lower bridge arm is electrically connected to the second conductor coverage area; the anode of the passive freewheeling chip of the lower bridge arm is electrically connected to the second conductor coverage area.

[0146] According to an embodiment of this application, the chips (active switching chip and passive freewheeling chip) in the upper arms of at least two arms of the second converter bridge circuit are electrically connected to the first conductor coverage area; the chips (active switching chip and passive freewheeling chip) in the lower arms of at least two arms of the second converter bridge circuit are electrically connected to the first conductor coverage area.

[0147] Figure 10 An optional side view of the electronic module provided in an embodiment of this application is shown. See also Figure 10Optionally, in this embodiment, the substrate of the power generation module or drive submodule includes a direct-bonded copper ceramic substrate (DBC). The direct-bonded copper ceramic substrate includes a first copper layer 52, a substrate 51, and a second copper layer 53; the first copper layer 52 and the second copper layer 53 are bonded to two opposite surfaces of the substrate 51, forming a "copper-ceramic-copper" sandwich structure. The first copper layer or the second copper layer includes a first copper pattern and a second copper pattern; the first copper pattern and the second copper pattern are insulated from each other; the first copper pattern is used to set the upper bridge of the rectifier bridge; the second copper pattern is used to set the lower bridge of the rectifier bridge. Using the DBC structure is beneficial for improving the heat dissipation capacity of the drive submodule 1 and the power generation module 2. Therefore, when the power generation module 2 uses a full-bridge circuit, the DBC structure can further reduce the area of ​​the second substrate while maintaining power generation efficiency, thereby reducing the volume of the power generation module 2. Simultaneously, the use of a DBC structure as a substrate for the half-bridge unit in the drive submodule 1 can further reduce the volume of the drive submodule, which is beneficial for the integration and miniaturization of the power module provided in this application. Optionally, the ceramic substrate material includes any one of silicon nitride (Si3N4), aluminum nitride (AlN), and alumina (Al3O3). Preferably, for the driver submodule, its circuitry is mounted on a silicon nitride-based ceramic substrate. Furthermore, using a DBC structure substrate ensures consistency of parasitic inductance in the upper and lower bridges, reducing stray inductance in the system. Simultaneously, it requires a smaller heat dissipation area for the same power demand, which is more conducive to miniaturization. This effectively reduces the losses in the first converter bridge circuit and decreases the total chip area or number of chips required. A conventional driver submodule requires at least 6 active switching chips and 6 passive freewheeling chips in one bridge arm. For example, as... Figure 4 As shown, using the first substrate provided in this application, at least one bridge arm in the drive submodule requires only 4 active switching chips and 4 passive freewheeling chips. Optionally, the thermal conductivity of the substrate (first substrate) of the drive submodule provided in this application embodiment is greater than 27 W / m·K. Exemplarily, the first substrate includes a silicon nitride (Si3N4) ceramic substrate, an aluminum nitride (AlN) ceramic substrate, or an alumina (Al3O3) ceramic substrate.

[0148] See Figure 10 Optionally, a chip solder layer 54 and a substrate solder layer 55 are further formed on the surfaces of the first copper layer 52 and the second copper layer 53. See also Figure 10The passive freewheeling chip and the active switching chip are disposed on the surface of the chip solder layer. Optionally, compared to the passive freewheeling chip, the active switching chip is closer to the edge of the chip solder layer to reduce thermal coupling of the active switching chip. Signal terminal 6 passes through the chip solder layer and is inserted into the ceramic substrate 51 to monitor the voltage drop across the collector and emitter of the active switching chip in the rectifier bridge. For the power generation module provided in this application, signal terminals 6 are respectively provided on the upper and lower bridges of the rectifier bridge. Since the area ratio of the passive freewheeling chip to the active switching chip in the power generation module provided in this application conforms to a first preset ratio, the full-bridge circuit of the power generation module can be integrated onto the same substrate. Therefore, when the rectifier bridge is a multiphase rectifier bridge, the collectors of all upper bridges in the multiphase rectifier bridge share a single signal terminal (also called the C signal terminal), and the emitters of all lower bridges share a single signal terminal (also called the E signal terminal). See also Figure 10 The edge of the substrate is also provided with a temperature-sensing resistor 10 (NTC, Negative Temperature Coefficient) for monitoring the temperature of the power generation module 2. Optionally, the total area ratio of the passive freewheeling chip to the active switching chip in the second converter bridge circuit of the power generation module provided in this application meets a first ratio, thereby enabling the power generation module to be integrated into the same substrate, whereby all bridge arms in the second converter bridge circuit share a single temperature sensor 10. Exemplarily, the temperature sensor includes a thermistor (NTC, Negative Temperature Coefficient).

[0149] According to some optional implementation methods, such as Figure 4 As shown, in at least one arm of the second converter bridge, the chips (active switching chip and passive freewheeling chip) of the upper arm are offset relative to the chips of the lower arm along a first direction, and a temperature sensor is disposed at the end of the second substrate opposite to the first direction. The offset of the chips in the upper arm relative to the chips in the lower arm provides space for the placement of the temperature sensor.

[0150] According to the embodiments of this application, such as Figure 11 As shown, the power module provided in this application also includes a heat dissipation module 7. The heat dissipation module 7 includes a cooling substrate 71 and heat dissipation fins 72; the heat dissipation fins 72 are located on a first surface of the cooling substrate 71; the second surface of the cooling substrate 71 is connected to the power generation module and the drive submodule. Optionally, as shown... Figure 10 As shown, the second side of the cooling substrate 71 is connected to the substrate through a substrate solder layer. See also Figure 12 The drive submodule 1 and the generator module 2 share the same heat dissipation module. Figure 12 In the diagram, the width of the half-bridge unit 11 is b1, and the width of the power generation module is b2. The sum of the widths of the drive submodule and the power generation module is less than the width B of the cooling substrate.

[0151] According to some optional implementations, the arrangement density of heat dissipation fins within the projection range of the drive submodule is greater than that within the projection range of the power generation module, along a direction perpendicular to the cooling substrate. Since the power of the drive submodule is higher than that of the power generation module, using different heat dissipation fin arrangement densities is beneficial for optimizing the heat dissipation of the drive submodule. It should be noted that the heat dissipation fin arrangement density must take into account the effective circulation of the cooling fluid (refrigerant).

[0152] like Figure 13 As shown, the heat dissipation module also includes a base 73. The base 73 is located on the side of the cooling substrate 71 where the heat dissipation fins 72 are located, and the space between the base 73 and the cooling substrate 71 forms a fluid channel 74 for circulating refrigerant. Optionally, as... Figure 13 As shown, the heat dissipation module is an integrated unit.

[0153] According to an embodiment of this application, the power module further includes a DC terminal 3 and an AC terminal 4. The DC terminal 3 is used for the input / output of AC power from the rectifier bridge, and the DC terminal 4 is used for the input / output of DC power rectified by the rectifier bridge. Figure 14 An optional structure of the DC terminal provided in this application is shown. Optionally, the center line of the upper bridge chip in each corresponding half-bridge circuit of the rectifier bridge is aligned with the center of the AC terminal of the corresponding phase, and the center lines of the upper and lower bridges are staggered.

[0154] like Figure 14 As shown, the DC terminal 3 includes a laminated busbar. This laminated busbar includes a first terminal 31 and a second terminal 32 that are insulated from each other, and the first terminal 31 and the second terminal 32 are disposed opposite each other in a first direction Z. The distance between the first terminal 31 and the second terminal 32 is H0.

[0155] The first terminal 31 includes a first segment terminal 311 and a second segment terminal 312; the first segment terminal 311 and the second segment terminal 312 are parallel to the second direction Y, and the first end of the first segment terminal 311 is electrically connected to the rectifier bridge, and the other end of the first segment terminal 311 is connected to one end of the second segment terminal 312.

[0156] The second terminal 32 includes a third terminal 321, a fourth terminal 322, and a fifth terminal 323; the third terminal 321 and the fourth terminal 322 are parallel to the second direction Y; the fifth terminal 323 is parallel to the first direction and points away from the first terminal 311; the first end of the third terminal 321 is electrically connected to the rectifier bridge, and the other end of the third terminal 321 is connected to one end of the fourth terminal 322; the other end of the fourth terminal 322 is connected to one end of the fifth terminal 323; the first direction Z and the second direction Y are perpendicular to each other.

[0157] like Figure 14 As shown, the power module provided in this application also includes a capacitor 8. The capacitor 8 and the power generation module 2 are stacked along a first direction Z. Furthermore, the capacitor 8 also includes a third terminal 81 and a fourth terminal 82. The third terminal 81 and the fourth terminal 82 are disposed opposite each other on the surface of the capacitor 8 facing the power generation module. The third terminal 81 is connected to the fifth segment terminal 323 of the second terminal 32, and the fourth terminal 32 is connected to the second segment terminal 312 of the first terminal. Figure 10 As shown, the fourth terminal is soldered to the second terminal of the first terminal via a lead wire. Figure 10 As shown, the third terminal and the fifth segment 323 of the second terminal are connected by welding.

[0158] According to the embodiments of this application, when the power module performs high-speed on / off control, a surge voltage V is applied to the current loop of the power module. V is proportional to the magnitude of the series inductance Ls introduced into the terminals of the current loop. The formula for calculating the surge voltage V is:

[0159]

[0160] in, is the rate of change of current in the current loop.

[0161] like Figures 14 to 16 As shown, the first terminal 31 and the second terminal 32 are two parallel and series-connected DC terminals in the electronic control assembly. For example, the first terminal 31 and the second terminal 32 can be the positive and negative terminals of a power module, or the positive and negative terminals of a capacitor assembly. The width of both the first terminal 31 and the second terminal 32 is set to W, the length to l, and the thickness to t, and the distance between them is d. Here, the length l is the dimension along the extension direction of the first / second terminal, the thickness t is the dimension along the first direction Z, and the width W is the dimension along the third direction X. The third direction is perpendicular to both the first and second directions.

[0162] for Figure 14 The arrangement of the first and second terminals shown in the figure, and the empirical formula for calculating Ls in the current loop of the two terminals are as follows:

[0163]

[0164] Where L1 and L2 represent the self-inductance of the two terminals, respectively; M represents the mutual inductance between the two terminals; k represents the coupling coefficient, which characterizes the degree of coupling between the two terminals; and μ0 is the permeability in vacuum. If WS:W ≠ 1, then k < 1. The smaller the value of WS:W, the greater the misalignment between the two terminals, and the smaller the value of k. WS is the overlap width of the two terminals.

[0165] Based on formula (2), the formula for Ls can be expressed as:

[0166]

[0167] Where μ0 is the magnetic permeability in vacuum.

[0168] Based on formulas (1) and (3), we know that the smaller L is, the larger W is, the larger t is, the smaller Ls is, and the smaller V is; the larger WS:W is, the larger the overlap ratio of the two terminals is, the larger k is, the smaller Ls is, and the smaller the surge voltage is.

[0169] Therefore, without increasing the total circuit length, the wider each segment of the first terminal 21, second terminal 32, third terminal 81, and fourth terminal 82, the greater the overlap ratio, the smaller the self-inductance, and the smaller the surge voltage, all without increasing the total circuit length. Optionally, such as Figure 15 and Figure 16 As shown, the projections of the first and third terminals, and the second and fourth terminals overlap in the first direction; the projections of the fifth and at least a portion of the third terminals overlap in the second direction; the projections of the fourth and at least a portion of the third terminals overlap in the second direction; and the width W1 of the first terminal is smaller than the width W2 of the second terminal; the width W3 of the portion of the third terminal away from the capacitor is smaller than the width W4 of the portion of the third terminal near the capacitor. Optionally, the width of the portion of the fourth terminal away from the capacitor is smaller than the width of the portion of the fourth terminal near the capacitor. Further, the width of the third terminal is smaller than the width of the fourth terminal.

[0170] According to an embodiment of this application, the width of the second terminal segment is equal to the width of the portion of the third terminal furthest from the capacitor; and / or, the width of the second terminal segment is equal to the width of the portion of the fourth terminal furthest from the capacitor. This improves the overlap of corresponding terminals in the power module and capacitor, making the overlap as close to 100% as possible, thereby effectively reducing series inductance. Similarly, in the third direction, the first, second, third, and fourth terminals also satisfy the following conditions: the edges of the first and third terminal segments are flush; and / or, the edges of the second and fourth terminal segments are flush; and / or, the edges of the fifth and third terminal segments are flush; and / or, the edges of the fourth and third terminal segments are flush. "Satisfying" means that the edges of the terminals are flush or nearly flush. By making the edges of overlapping terminals in the power module and capacitor flush or nearly flush, the overlap of the terminals is improved, and the series inductance is reduced.

[0171] According to embodiments of this application, the rectifier bridge of the power generation module shares a common set of DC terminals. Optionally, when the drive module uses multiple independent half-bridge units, each half-bridge unit uses an independent DC terminal. Optionally, when the drive module uses a full-bridge circuit, the full-bridge circuit shares a common set of DC terminals.

[0172] According to embodiments of this application, the sub-power module further includes a housing, which comprises a frame and a cover. The drive sub-module and the power generation module provided in this application share the same frame. In some embodiments, such as Figure 17 As shown, the power submodule provided in this application also includes a frame 11. The frame 5 is disposed on the side of the cooling substrate of the heat dissipation module 7 away from the heat dissipation fins, and the half-bridge unit of the drive submodule 1 and the rectifier bridge of the power generation module 2 are disposed within the area enclosed by the outline of the frame 11. Optionally, the space between the frame 11 and the drive submodule 1 and the power generation module 2 is filled with a heat dissipation medium (e.g., silicone). The power submodule provided in this application also includes a cover plate, which is used to enclose the space between the frame 11 and the heat dissipation module 7. Exemplarily, the connection method between the cover plate and the frame includes welding, hole-post connection, and snap-fit ​​connection. Exemplarily, the materials of the frame and the cover plate include high molecular polymers, such as polyphenylene sulfide (PPS). Using a PPS housing allows the chip in the power module provided in this application to operate at a long-term temperature of up to 175°C.

[0173] According to the embodiments of this application, such as Figure 17 As shown, the sub-power module also includes a magnetic core for suppressing high-frequency common-mode noise generated by the active switching chip. Optionally, the magnetic core is directly mounted on the ribbon cable of AC terminal 4.

[0174] Secondly, this application also provides a motor controller, including a power module as described in any of the above embodiments.

[0175] Thirdly, embodiments of this application also provide a drive assembly, including the power module as described in any of the above embodiments.

[0176] Fourthly, embodiments of this application also provide a vehicle, characterized in that it includes a power module as described in any of the above embodiments.

[0177] In summary, the power module provided in this application reduces the area of ​​the substrate by employing a full-bridge circuit, thereby miniaturizing the power generation module and promoting the integration and miniaturization of the drive submodule and the power generation module. Furthermore, by limiting the area ratio of the passive freewheeling chip to the active switching chip, the area of ​​the substrate is further reduced without affecting current capability and power generation efficiency, further promoting the integration and miniaturization of the drive submodule and the power generation module. The sub-power module provided in this application further reduces the area of ​​the substrate by employing a DBC substrate. Therefore, the sub-power module provided in this application allows the drive submodule and the power generation module to share the same frame and the same second heat dissipation structure, reducing production costs, design complexity, assembly difficulty, and improving the utilization rate of vehicle interior space.

[0178] The motor controller, drive assembly, and vehicle provided in this application include the power module provided in any of the above embodiments, which reduces production costs, design difficulty, assembly difficulty, and improves the utilization rate of vehicle interior space.

[0179] This application also provides technical solutions as described in the following appendix:

[0180] 1. A power module, comprising: a driver submodule and a generator module;

[0181] The drive submodule is configured to perform inversion or rectification according to the driving state of the hybrid vehicle.

[0182] The power generation module includes a full-bridge unit, which includes a liner and a full-bridge circuit disposed on one side surface of the liner; the full-bridge circuit is configured as a rectifier bridge for rectifying the output current of the power generation equipment of the hybrid vehicle.

[0183] 2. According to the power module described in Appendix 1, the rectifier bridge includes a first number of active switching chips and a second number of passive freewheeling chips arranged in pairs with at least a portion of the active switching chips.

[0184] Among them, at least one pair of the paired passive current-carrying chips and active switching chips have an area ratio that satisfies a first preset ratio value, so as to reduce the loss of the rectifier bridge, thereby enabling the first number of active switching chips and the second number of passive current-carrying chips to be integrated into a reduced space.

[0185] 3. According to the power module described in Appendix 1 or 2, the rectifier bridge further satisfies the following: the area ratio of at least one pair of the paired passive freewheeling chips to the active switching chips is greater than or equal to 0.6 and less than or equal to 1.25, so as to reduce the loss of the rectifier bridge, thereby enabling the first number of active switching chips and the second number of passive freewheeling chips to be integrated onto the same substrate.

[0186] 4. According to any one of the power modules described in Appendices 1 to 3, the substrate includes a substrate; one side surface of the substrate includes at least one conductor-covered area;

[0187] An electrode of any one of the first number of active switching chips and the second number of passive freewheeling chips is electrically connected to the conductor coverage area, so that the chip can be electrically connected to the DC port of the rectifier bridge via the conductor coverage area.

[0188] 5. According to any one of the power modules described in Appendix 1 to 4, the at least one conductor covering area includes a first conductor covering area and a second conductor covering area that are insulated from each other; the first conductor covering area and the second conductor covering area can be connected to the positive and negative terminals of the DC port, respectively.

[0189] 6. According to any of the power modules described in Appendix 1 to 5, the rectifier bridge is a multi-phase full-bridge circuit; each phase of the multi-phase full-bridge circuit includes an upper bridge arm and a lower bridge arm.

[0190] The upper bridge arm is disposed in the first conductor coverage area; and...

[0191] The lower bridge arm is disposed in the second conductor coverage area.

[0192] 7. According to any of the power modules described in Appendix 1 to 6, the collector of the active switching chip of the upper bridge arm is electrically connected to the first conductor coverage area; the cathode of the passive freewheeling chip of the upper bridge arm is electrically connected to the first coverage area.

[0193] 8. According to any of the power modules described in Appendix 1 to 7, the emitter of the active switching chip of the lower bridge arm is electrically connected to the second conductor coverage area; the anode of the passive freewheeling chip of the lower bridge arm is electrically connected to the second conductor coverage area.

[0194] 9. According to any of the power modules described in Appendix 1 to 8, the first number of active switching chips and the second number of passive freewheeling chips are integrated on the same substrate.

[0195] 10. According to any one of the power modules described in Appendix 1 to 9, the power generation module further includes signal terminals and / or temperature sensing resistors;

[0196] The signal terminal is used to monitor the voltage drop across the collector and emitter of the rectifier bridge; the temperature sensing resistor is used to collect the temperature of the substrate of the power generation module.

[0197] The second number of passive freewheeling chips, the first number of active switching chips, and the signal terminals are integrated on the same substrate; and / or,

[0198] The second number of passive freewheeling chips, the first number of active switching chips, and the temperature sensing resistor are integrated on the same substrate.

[0199] 11. According to any of the power modules described in Appendix 1 to 10, the rectifier bridge is a multiphase rectifier bridge; all phase-corresponding bridge arms in the multiphase rectifier bridge share the same temperature sensing resistor.

[0200] 12. According to any of the power modules described in Appendix 1 to 11, the rectifier bridge is a multiphase rectifier bridge; the collectors of all upper bridges in the multiphase rectifier bridge share a common signal terminal; the emitters of all upper bridges in the multiphase rectifier bridge share a common signal terminal.

[0201] 13. According to any of the power modules described in Appendix 1 to 12, the substrate material includes any one of silicon nitride (Si3N4), aluminum nitride (AlN), and aluminum oxide (Al3O3).

[0202] 14. According to any one of the power modules described in Appendix 1 to 13, the power module further includes a heat dissipation module; the heat dissipation module includes a cooling substrate and heat dissipation fins; the heat dissipation fins are located on a first surface of the cooling substrate; and the second surface of the cooling substrate is connected to the power generation module and the drive submodule.

[0203] 15. According to any of the power modules described in Appendix 1 to 14, the drive submodule and the power generation module share the same heat dissipation module.

[0204] 16. According to any one of the power modules described in Appendix 1 to 15, the heat dissipation module further includes a base; the base is located on the side of the cooling substrate having heat dissipation fins, and the space between the base and the cooling substrate forms a fluid channel for circulating refrigerant.

[0205] 17. According to any one of the power modules described in Appendix 1 to 16, the power module further includes a DC terminal and an AC terminal; the AC terminal is used for the input / output of AC power from the rectifier bridge, and the DC terminal is used for the input / output of DC power rectified by the rectifier bridge.

[0206] 18. According to any one of the power modules described in Appendix 1 to 17, the DC terminal includes a multilayer busbar; the multilayer busbar includes a first terminal and a second terminal that are insulated from each other, and the first terminal and the second terminal are disposed opposite to each other in a first direction;

[0207] The first terminal includes a first segment terminal and a second segment terminal; the first segment terminal and the second segment terminal are parallel to the second direction, and the first end of the first segment terminal is electrically connected to the rectifier bridge, and the other end of the first segment terminal is connected to one end of the second segment terminal;

[0208] The second terminal includes a third segment terminal, a fourth segment terminal, and a fifth segment terminal; the third segment terminal and the fourth segment terminal are parallel to the second direction; the fifth segment terminal is parallel to the first direction and points away from the first segment terminal; a first end of the third segment terminal is electrically connected to the rectifier bridge, and the other end of the third segment terminal is connected to one end of the fourth segment terminal; the other end of the fourth segment terminal is connected to one end of the fifth segment terminal.

[0209] The first direction and the second direction are perpendicular to each other.

[0210] 19. The power module according to any one of Appendices 1 to 18, the power module further includes a capacitor; the capacitor and the power generation module are stacked along the first direction; and the capacitor further includes a third terminal and a fourth terminal; the third terminal and the fourth terminal are disposed opposite to each other on the surface of the capacitor facing the power generation module;

[0211] The third terminal is connected to the fifth segment of the second terminal; the fourth terminal is connected to the second segment of the first terminal.

[0212] 20. According to any one of Appendices 1 to 19, the power module further satisfies the following: the projections of the first segment terminal and the third segment terminal, the second segment terminal and the fourth segment terminal overlap in a first direction; the projections of at least a portion of the fifth segment terminal and the third terminal overlap in a second direction; and the projections of at least a portion of the fourth terminal and the third terminal overlap in a second direction; and,

[0213] The width of the first terminal segment is less than the width of the second terminal segment; the width of the third terminal segment is less than the width of the fourth terminal segment; the width of the third terminal segment furthest from the capacitor is less than the width of the third terminal segment closest to the capacitor; the width of the fourth terminal segment furthest from the capacitor is less than the width of the fourth terminal segment closest to the capacitor.

[0214] 21. The power module according to any one of Appendices 1 to 20, characterized in that the width of the second terminal segment is equal to the width of the portion of the third terminal away from the capacitor; and / or,

[0215] The width of the second terminal segment is equal to the width of the portion of the fourth terminal furthest from the capacitor.

[0216] 22. According to any of the power modules described in Appendices 1 to 21, along a third direction, the first terminal, the second terminal, the third terminal, and the fourth terminal also satisfy:

[0217] The edges of the first and third terminal segments meet the flush condition; and / or,

[0218] The edges of the second and fourth terminals meet the flush condition; and / or,

[0219] The edges of the fifth terminal and the third terminal meet the flush condition; and / or,

[0220] The edges of the fourth and third terminals meet the flush condition.

[0221] 23. According to any of the power modules described in Appendix 1 to 22, all half-bridges in the rectifier bridge of the power generation module share a common DC terminal.

[0222] 24. According to any of the power modules described in Appendix 1 to 23, the drive submodule includes an inverter bridge for inverting / rectifying the power according to the driving state of the hybrid vehicle; wherein the area ratio of the passive freewheeling chip and the active switching chip connected in parallel in at least one arm of the inverter bridge satisfies a second preset ratio to reduce the losses of the inverter bridge, thereby enabling the drive submodule to be integrated into a smaller space.

[0223] 25. According to any of the power modules described in Appendix 1 to 24, the drive submodule includes three independent half-bridge units; the three independent half-bridge units are configured to perform rectification or inversion according to the form state of the hybrid vehicle.

[0224] 26. According to the power modules described in Appendices 1 to 22, the three half-bridge units share a common DC terminal.

[0225] 27. According to any of the power modules described in Appendix 1 to 26, the power module further includes a frame; the drive submodule and the generator module share the same frame.

[0226] 28. According to any of the power modules described in Appendix 1 to 27, the power module further includes a frame; the drive submodule and the power generation module share the same frame.

[0227] 29. The inverter bridge is disposed on a silicon nitride ceramic substrate according to any of the power modules described in Appendix 1 to 28.

[0228] 30. A motor controller comprising a power module according to any one of appendices 1-29.

[0229] 31. A drive assembly comprising a power module according to any one of Appendices 1-29.

[0230] 32. A vehicle comprising a power module according to any one of Annexes 1-29.

[0231] The above description is merely a specific implementation of the embodiments of this application, but the protection scope of the embodiments of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the embodiments of this application should be included within the protection scope of the embodiments of this application. Therefore, the protection scope of the embodiments of this application should be determined by the protection scope of the claims.

Claims

1. A power module, characterized by include: Drive submodule and generator module; The drive submodule includes a first converter bridge circuit configured to be connected to the drive motor; The generator module includes a second liner and a second converter bridge circuit disposed on the second liner; the second converter bridge circuit is configured to be connected to the generator; the second converter bridge circuit is a multiphase circuit; at least two bridge arms of the second converter bridge circuit are disposed on the same second liner.

2. The power module of claim 1, wherein, The second converter bridge circuit is a three-phase circuit; the three arms of the second converter bridge circuit are mounted on the same second liner.

3. The power module of claim 1, wherein, The second converter bridge circuit is a multiphase circuit; the second converter bridge circuit includes at least one active switching chip and at least one passive freewheeling chip; In at least one arm of the second converter bridge circuit, the ratio of the total area of ​​the passive freewheeling chip to the total area of ​​the active switching chip satisfies a first ratio, which is greater than or equal to 0.

6.

4. The power module of claim 3, wherein, The first ratio is greater than or equal to 1.

5. The power module according to claim 3 or 4, characterized in that, The first ratio is less than or equal to 2.

6. The power module according to claim 3 or 4, characterized in that The first ratio is less than or equal to 1.

2.

7. The power module of claim 3, wherein, In at least one arm of the second converter bridge circuit, at least some passive freewheeling chips are paired with at least some active switching chips.

8. The power module of claim 7, wherein, The area ratio of at least one pair of the paired passive current-carrying chips to the active switching chip satisfies the first ratio value.

9. The power module of any one of claims 1 to 4, characterized in that, At least one arm of the second converter bridge circuit is configured to consist of two active switching chips and two passive freewheeling chips.

10. The power module of any one of claims 1 to 4, characterized in that, The liner includes a substrate; one side surface of the substrate includes at least one conductor covering area; the at least one conductor covering area includes a first conductor covering area and a second conductor covering area that are insulated from each other; each of at least one bridge arm of the second converter bridge circuit includes an upper bridge arm and a lower bridge arm; In this circuit, the active switching chip and the passive freewheeling chip in the upper arm of at least two bridge arms of the second converter bridge circuit are electrically connected to the first conductor coverage area; the active switching chip and the passive freewheeling chip in the lower arm of at least two bridge arms of the second converter bridge circuit are electrically connected to the second conductor coverage area.

11. The power module of claim 10, wherein, The first conductor coverage area and the second conductor coverage area are spaced apart.

12. The power module of any one of claims 1 to 4, characterized by The power module also includes a temperature sensor; all bridge arms in the second converter bridge circuit share the same temperature sensor.

13. The power module of any one of claims 1 to 4, characterized by In at least one arm of the second converter bridge, the active switching chip and the passive freewheeling chip in the upper arm are offset along a first direction relative to the active switching chip and the passive freewheeling chip in the lower arm, and a temperature sensor is provided at the end of the second liner opposite to the first direction.

14. The power module of any one of claims 1 to 4, characterized by The power module also includes a heat dissipation module; and the drive submodule and the power generation module share the same heat dissipation module.

15. The power module of claim 14, wherein, The heat dissipation module includes a cooling substrate and heat dissipation fins; the heat dissipation fins are located on the first side of the cooling substrate; the second side of the cooling substrate is connected to the power generation module and the drive submodule.

16. The power module of claim 15, wherein, Along a direction perpendicular to the cooling substrate, the arrangement density of heat dissipation fins within the projection range of the drive submodule is greater than the arrangement density of heat dissipation fins within the projection range of the power generation module.

17. The power module of any one of claims 1 to 4, wherein, The first converter bridge circuit is a multiphase circuit; the first converter bridge circuit includes multiple bridge arms; the multiple bridge arms are respectively disposed on multiple independent first substrates.

18. The power module of claim 17, wherein, At least one arm of the first converter bridge circuit is configured to consist of four active switching chips and four passive freewheeling chips.

19. The power module of claim 17, wherein, The thermal conductivity of the first liner is greater than 27 W / m·K.

20. The power module of claim 17, wherein, The first liner includes a silicon nitride ceramic substrate, an aluminum nitride ceramic substrate, or an alumina ceramic substrate.

21. The power module of any one of claims 1 to 4, wherein, The driving submodule and the power generation module share the same frame.

22. An electric machine controller characterized by Includes the power module according to any one of claims 1-21.

23. A drive assembly characterized by, Includes the power module according to any one of claims 1-21.

24. A vehicle characterized by comprising: Includes the power module according to any one of claims 1-21.

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