A tunneling oxide passivated contact structure for solar cells and solar cells

By introducing a distributed doping structure of lightly doped layer/heavily doped carbon layer/second tunneling oxide layer/heavily doped undoped layer in TOPCon battery, the problems of uneven contact resistance and silver ion penetration in heavily phosphorus-doped and heavily carbon-doped layers are solved, the carrier transport efficiency and interface stability are improved, and high-efficiency battery performance and production compatibility are achieved.

CN224460452UActive Publication Date: 2026-07-03CHINA SCI & TECH (NINGBO) CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
CHINA SCI & TECH (NINGBO) CO LTD
Filing Date
2025-07-24
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

In existing TOPCon batteries, the uneven distribution of carbon elements when the heavily phosphorus-doped and heavily carbon-doped layers come into contact with the metal electrodes leads to differences in contact resistance, affecting carrier transport efficiency. Furthermore, the passivation layer is easily penetrated and damaged by silver ions, reducing device efficiency.

Method used

A distributed doping structure of lightly doped layer/heavily doped carbon-doped layer/second tunneling oxide layer/heavily doped undoped layer is adopted to optimize carrier transport and interface passivation. The interface stability and resistance to silver ion erosion are improved by introducing the second tunneling oxide layer and the heavily doped undoped layer.

Benefits of technology

It improves carrier transport uniformity, enhances interface passivation stability, reduces contact resistance fluctuations, extends battery life, and enables efficient production in existing TOPCon production lines.

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Abstract

This utility model discloses a tunneling oxide passivation contact structure for a solar cell and a solar cell. The tunneling oxide passivation contact structure includes a substrate having a light-incident surface and a back-light surface disposed opposite to each other. The back-light surface is provided with, from the side closest to the substrate to the side furthest from the substrate, a first tunneling oxide layer, a lightly doped layer, a heavily doped carbon-doped layer, a second tunneling oxide layer, and a heavily doped undoped carbon layer. The total thickness of the heavily doped carbon-doped layer and the heavily doped undoped carbon layer is 30-140 nm. This utility model provides a tunneling oxide passivation contact structure for a solar cell. By setting a distributed doping structure of lightly doped layer / heavily doped carbon-doped layer / second tunneling oxide layer / heavily doped undoped carbon layer, it optimizes carrier transport and interface passivation, improves contact stability and resistance to silver ion erosion, and has advantages such as controllable doping profile and strong process compatibility, significantly improving cell performance.
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