A wafer temperature measuring device and a wafer temperature measuring apparatus having the same
By setting dovetail grooves on the wafer substrate and embedding thermocouple devices in the temperature probe, the problem of wafer surface temperature measurement being easily affected by airflow interference is solved, and high-precision and stable temperature measurement is achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- XIAN HEQI OPTICAL TEST TECHNOLOGY CO LTD
- Filing Date
- 2025-08-06
- Publication Date
- 2026-07-07
Smart Images
Figure CN224471157U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and in particular to a wafer temperature measuring device and a wafer temperature measuring equipment having the same. Background Technology
[0002] In the semiconductor manufacturing process, temperature affects the physical properties of semiconductor materials, chemical reaction rates, and the stability and consistency of the process, which in turn directly affects chip performance and yield. Therefore, accurate measurement of wafer temperature is crucial.
[0003] Currently, related technologies involve attaching infrared temperature sensors to a few points on the wafer surface. However, the surface is subject to interference from ambient airflow, resulting in large temperature measurement errors. Furthermore, the sensor size and wiring complexity limit the number of measurable points, making it difficult to meet the high-precision requirements of advanced processes for wafer temperature field uniformity detection. Utility Model Content
[0004] In view of the above-mentioned defects or deficiencies in the related technologies, it is desirable to provide a wafer temperature measuring device and a wafer temperature measuring equipment having the same, which can accurately measure the internal temperature of the wafer, avoid airflow interference, and have a uniform layout to meet high precision requirements.
[0005] In a first aspect, this application provides a wafer temperature measuring device, the wafer temperature measuring device comprising:
[0006] A wafer substrate, wherein a plurality of dovetail grooves are uniformly distributed on the wafer substrate, and the first aperture a corresponding to the dovetail groove on the substrate surface is smaller than the second aperture b corresponding to the dovetail groove inside the substrate.
[0007] A thermocouple device, comprising a thermocouple bundle and a multi-channel terminal connected to the thermocouple bundle, the thermocouple bundle including multiple temperature probes and adapter wires, the temperature probes being disposed in the dovetail groove and surrounded by glue.
[0008] Optionally, in some embodiments of this application, the relationship between the depth c of the dovetail groove and the thickness d of the wafer substrate is as follows:
[0009] Optionally, in some embodiments of this application, the angle θ between the side surface of the dovetail groove and the bottom surface of the dovetail groove is 45 degrees.
[0010] Optionally, in some embodiments of this application, the wafer substrate includes a single-crystal silicon substrate, a silicon carbide substrate, and a quartz substrate.
[0011] Optionally, in some embodiments of this application, the diameter of the wafer substrate includes 4 inches, 6 inches, 8 inches, and 12 inches.
[0012] Optionally, in some embodiments of this application, a dovetail groove is formed at the center of the wafer substrate, and multiple dovetail grooves are formed at equal intervals on circumferences with different radii, with the center of the wafer substrate as the center.
[0013] Optionally, in some embodiments of this application, the temperature probe is a flattened spherical structure.
[0014] Optionally, in some embodiments of this application, the temperature probe is located on the side of the dovetail groove.
[0015] Optionally, in some embodiments of this application, the adapter cable is further surrounded by a quartz fiber sheath.
[0016] Secondly, this application provides a wafer temperature measuring device, which includes the wafer temperature measuring apparatus described in any one of the first aspects.
[0017] As can be seen from the above technical solutions, the embodiments of this application have the following advantages:
[0018] This application provides a wafer temperature measurement device and a wafer temperature measurement equipment having the same. By uniformly setting multiple dovetail grooves on the wafer substrate, multiple temperature measuring probes of the thermocouple bundle in the thermocouple device are respectively embedded in their corresponding dovetail grooves to directly and accurately detect the internal temperature of the wafer. It has high sensitivity, effectively avoids surface airflow interference, and significantly improves temperature measurement accuracy and response speed. Furthermore, the first aperture of the dovetail groove on the substrate surface is smaller than the second aperture of the dovetail groove inside the substrate. With the addition of glue filling, the mechanical locking formed by the inverted trapezoidal cross section can be used to greatly enhance the bonding force between the temperature measuring probe and the wafer substrate. Under high temperature and vibration conditions, the probe will not fall off or shift, which significantly improves the long-term stability and reliability of the temperature measurement device. Attached Figure Description
[0019] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0020] Figure 1 This is a schematic diagram of the structure of a wafer temperature measuring device provided in an embodiment of this application;
[0021] Figure 2 A cross-sectional structural diagram of a dovetail groove provided in an embodiment of this application;
[0022] Figure 3 This is a schematic diagram of the structure of a thermocouple device provided in an embodiment of this application;
[0023] Figure 4 A cross-sectional structural diagram of a temperature probe provided in an embodiment of this application;
[0024] Figure 5 This is a structural block diagram of a wafer temperature measuring device provided in an embodiment of this application.
[0025] Figure label:
[0026] 1-Wafer temperature measurement device, 11-Wafer substrate, 111-Dovetail groove, a-First aperture, b-Second aperture, c-Groove depth, d-Thickness, θ-Included angle, 12-Thermocouple device, 121-Thermocouple bundle, 1211-Temperature probe, 1212-Adapter cable, 1213-Sealing tape, 122-Multi-channel terminal, 2-Wafer temperature measurement equipment. Detailed Implementation
[0027] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0028] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0029] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The following examples illustrate this. Figures 1 to 5 The wafer temperature measuring device and wafer temperature measuring equipment having the same provided in the embodiments of this application are described in detail.
[0030] Please refer to Figure 1 This is a schematic diagram of a wafer temperature measuring device provided in an embodiment of this application. The wafer temperature measuring device 1 includes a wafer substrate 11 and a thermocouple device 12. The wafer substrate 11 has a plurality of dovetail grooves 111 uniformly distributed on it, such as... Figure 2 The first aperture a on the substrate surface corresponding to the dovetail groove 111 is smaller than the second aperture b inside the substrate corresponding to the dovetail groove 111, i.e., narrower at the top and wider at the bottom. Figure 3As shown, the thermocouple device 12 includes a thermocouple bundle 121 and a multi-channel terminal 122 connected to the thermocouple bundle 121. The thermocouple bundle 121 includes multiple temperature probes 1211 and adapter wires 1212. The temperature probes 1211 are disposed in dovetail grooves 111 and surrounded by glue. The multi-channel terminal 122 can be a DB37 terminal. The advantage of this arrangement is that it can directly and accurately detect the internal temperature of the wafer substrate 11 with high sensitivity. At the same time, it greatly enhances the bonding force between the temperature probes 1211 and the wafer substrate 11, and significantly improves the long-term stability and reliability of the temperature measuring device.
[0031] In some embodiments of this application, it is still as Figure 2 As shown, the relationship between the depth c of the dovetail groove 111 and the thickness d of the wafer substrate 11 can be c = 4 / 5d. Furthermore, the angle θ between the side surface and the bottom surface of the dovetail groove 111 can be 45 degrees. Additionally, the adhesive can be a high-temperature resistant and highly thermally conductive metal oxide adhesive such as alumina-filled epoxy resin. This embodiment of the application precisely controls the size and surface roughness of the dovetail groove 111 by combining laser engraving with reactive ion etching. Simultaneously, the use of a high-temperature resistant and highly thermally conductive adhesive achieves synergistic optimization of processing technology and material properties. The advantage of this setup is that it reduces the adverse effects of processing on the performance of the wafer substrate 11, and utilizes the high adhesion and sealing properties of the material to improve the bonding strength and environmental adaptability between the galvanic device 12 and the wafer substrate 11.
[0032] In some embodiments of this application, the wafer substrate 11 includes, but is not limited to, single-crystal silicon substrates, silicon carbide substrates, and quartz substrates, and the diameter of the wafer substrate 11 can be 4 inches, 6 inches, 8 inches, and 12 inches, etc. In actual use, the external dimensions of the wafer substrate 11 are the same as those of the semiconductor wafer to be processed. By measuring the internal temperature of the wafer substrate 11, process engineers can complete tasks such as adjusting etching conditions, verifying and matching cavities, and ensuring process stability. Furthermore, a dovetail groove 111 is formed at the center of the wafer substrate 11, and multiple dovetail grooves 111 are equally spaced on the circumferences formed by different radii with the center of the wafer substrate 11 as the center, thereby enabling accurate measurement of the internal temperature of the wafer substrate 11 at multiple points and with high density.
[0033] In some embodiments of this application, such as Figure 4As shown, the temperature probe 1211 can be a flattened spherical structure, meaning that the cross-sectional structure of the temperature probe 1211 is flat at the top and bottom and curved on the left and right. This design increases the heat transfer area and avoids point contact between the spherical structure and the flat surface, resulting in better heat conduction and transfer efficiency. Furthermore, the temperature probe 1211 can be located on the side of the dovetail groove 111. This design avoids the cold zone in the center of the dovetail groove 111, leading to more accurate measurement results. Additionally, the adapter cable 1212 can be surrounded by a quartz fiber sheath, which is insulating and high-temperature resistant, allowing the positive and negative electrodes of the thermocouple to be effectively protected by passing them through the quartz fiber sheath. In addition, to facilitate temperature measurement of the client product without affecting the sealing effect, a sealing tape 1213 can be provided on the adapter cable 1212. The thermocouple is arranged on the sealing tape 1213, and the upper and lower tapes are bonded to each other. After the ultra-fine thermocouple and the ultra-thin tape are bonded to each other, a well-sealed structure is formed. The structure is pressed into the sealing groove of the client to complete the sealing.
[0034] In another aspect, embodiments of this application provide a wafer temperature measurement device. Please refer to... Figure 5 This is a structural block diagram of a wafer temperature measuring device provided in an embodiment of this application. The wafer temperature measuring device 2 may include... Figures 1 to 4 The corresponding embodiment includes any one of the wafer temperature measuring devices 1.
[0035] The wafer temperature measuring device and the wafer temperature measuring equipment provided in this application embodiment directly and accurately detect the internal temperature of the wafer by uniformly setting multiple dovetail grooves on the wafer substrate, thereby embedding multiple temperature measuring probes of the thermocouple bundle in the thermocouple device into their respective corresponding dovetail grooves. It has high sensitivity, effectively avoids surface airflow interference, and significantly improves temperature measurement accuracy and response speed. Furthermore, the first aperture of the dovetail groove on the substrate surface is smaller than the second aperture of the dovetail groove inside the substrate. With the addition of glue filling, the mechanical locking formed by the inverted trapezoidal cross section can be used to greatly enhance the bonding force between the temperature measuring probe and the wafer substrate. Under high temperature and vibration conditions, the probe will not fall off or shift, which significantly improves the long-term stability and reliability of the temperature measuring device.
[0036] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0037] This document uses specific examples to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.
Claims
1. A wafer temperature measuring device, characterized in that, The wafer temperature measuring device (1) includes: A wafer substrate (11) has a plurality of dovetail grooves (111) uniformly distributed on it. The first aperture a of the dovetail groove (111) on the substrate surface is smaller than the second aperture b of the dovetail groove (111) inside the substrate. Thermocouple device (12) includes thermocouple bundle (121) and multi-channel terminal (122) connected to thermocouple bundle (121). Thermocouple bundle (121) includes multiple temperature probes (1211) and adapter wire (1212). The temperature probes (1211) are disposed in the dovetail groove (111) and surrounded by glue.
2. The wafer temperature measuring device according to claim 1, characterized in that, The relationship between the depth c of the dovetail groove (111) and the thickness d of the wafer substrate (11) is as follows:
3. The wafer temperature measuring device according to claim 2, characterized in that, The angle θ between the side surface of the dovetail groove (111) and the bottom surface of the dovetail groove (111) is 45 degrees.
4. The wafer temperature measuring device according to claim 1, characterized in that, The wafer substrate (11) includes a single-crystal silicon substrate, a silicon carbide substrate, and a quartz substrate.
5. The wafer temperature measuring device according to claim 4, characterized in that, The diameter of the wafer substrate (11) includes 4 inches, 6 inches, 8 inches and 12 inches.
6. The wafer temperature measuring device according to claim 5, characterized in that, The wafer substrate (11) has a dovetail groove (111) at its center, and multiple dovetail grooves (111) are equally spaced on the circumference formed by different radii with the center of the wafer substrate (11) as the center.
7. The wafer temperature measuring device according to any one of claims 1 to 6, characterized in that, The temperature probe (1211) has a flattened spherical structure.
8. The wafer temperature measuring device according to claim 7, characterized in that, The temperature probe (1211) is located on the side of the dovetail groove (111).
9. The wafer temperature measuring device according to claim 7, characterized in that, The adapter cable (1212) is also surrounded by a quartz fiber sheath.
10. A wafer temperature measuring device, characterized in that, The wafer temperature measuring device (2) includes the wafer temperature measuring device (1) as described in any one of claims 1 to 9.