A sputtering device
By setting a charge transfer module on the wafer fixing module, the charge accumulated during sputtering is discharged, which solves the problem of tip discharge caused by ring burrs and improves the wafer production quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- ANHUI YOFC ADVANCED SEMICONDUCTOR CO LTD
- Filing Date
- 2025-08-29
- Publication Date
- 2026-07-24
AI Technical Summary
During physical vapor deposition sputtering, burrs on the pressure ring can easily trigger tip discharge, affecting wafer production quality.
A charge transfer module is installed on the wafer fixing module to export the accumulated charge and avoid the generation of tip discharge phenomenon.
This effectively avoids tip discharge caused by burrs on the surface of the wafer fixing module, thus improving wafer quality.
Smart Images
Figure CN224548523U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and more particularly to a sputtering apparatus. Background Technology
[0002] During the sputtering process, Physical Vapor Deposition (PVD) sputtering equipment accumulates a large amount of charge on the wafer clamping ring. If there are burrs on the clamping ring and they are close to the wafer, they can easily trigger tip discharge, affecting wafer production quality. Utility Model Content
[0003] This application provides a sputtering apparatus to avoid tip discharge caused by burrs on the surface of the wafer fixing module, thereby effectively preventing damage to the wafer caused by tip discharge and improving wafer quality.
[0004] According to one aspect of this application, a sputtering apparatus is provided, the sputtering apparatus comprising:
[0005] The base includes a first surface;
[0006] A wafer fixing module is disposed on one side of the substrate and is used to fix the wafer on the first surface.
[0007] The charge transfer module is mounted on the wafer fixing module and is used to export the charge accumulated on the wafer fixing module.
[0008] Furthermore, the charge transfer module is connected to a fixed potential.
[0009] Furthermore, the charge transfer module is positioned in contact with the base.
[0010] Furthermore, the charge transfer module includes a spring.
[0011] Furthermore, the charge transfer module is made of metal.
[0012] Furthermore, the wafer fixing module includes a pressure ring.
[0013] Furthermore, the base includes a first base portion and a second base portion, the first base portion being disposed on the first surface, and the second base portion being disposed on the side of the first base portion away from the first surface;
[0014] The clamping ring includes a first clamping ring portion and a second clamping ring portion; the first clamping ring portion is disposed in contact with the surface of the wafer away from the first base portion for fixing the wafer; the second clamping ring portion is connected to the first clamping ring portion and is disposed around the first base portion; the charge transfer module is disposed on the surface of the second clamping ring portion near the first base portion.
[0015] Furthermore, the wafer fixing module includes an electrostatic chuck.
[0016] Furthermore, the first surface of the base includes multiple back air vents;
[0017] The base blows back air onto the wafer through multiple back air holes.
[0018] Furthermore, the charge transfer module is grounded.
[0019] The sputtering apparatus provided in this application provides a wafer fixing module that is disposed on the side of the substrate on which the wafer is disposed, and an additional charge transfer module that is disposed on the wafer fixing module. The charge transfer module can conduct the charge accumulated on the wafer fixing module through the charge transfer module, thereby avoiding the phenomenon of tip discharge caused by burrs on the surface of the wafer fixing module. This effectively avoids damage to the wafer caused by tip discharge caused by the wafer fixing module and improves the wafer quality.
[0020] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of this application, nor is it intended to limit the scope of this application. Other features of this application will become readily apparent from the following description. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0022] Figure 1 This is a partial structural schematic diagram of a sputtering apparatus provided according to an embodiment of this application. Detailed Implementation
[0023] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of protection of the present application.
[0024] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.
[0025] This application provides a sputtering apparatus. Figure 1 This is a partial structural schematic diagram of a sputtering apparatus according to an embodiment of this application, with reference to... Figure 1 The sputtering apparatus includes:
[0026] Base 1, base 1 includes a first surface;
[0027] Wafer fixing module 2 is disposed on one side of the base 1 and is used to fix the wafer 4 on the first surface;
[0028] Charge transfer module 3 is disposed on wafer fixing module 2 and is used to export the charge accumulated on wafer fixing module 2.
[0029] Specifically, under suitable ion energy, the ion beam bombards the target material, causing collisions between the incident ions and atoms on the target surface. This sputters the atoms from the target surface, which carry kinetic energy and fly in a specific direction towards wafer 4, depositing on its surface to form the desired thin film. During sputtering, some ions are sputtered onto the wafer fixing module 2. As the sputtering time increases, a large amount of charge accumulates on the wafer fixing module 2. A charge transfer module 3 is installed on the wafer fixing module 2 to remove the accumulated charge, preventing tip discharge caused by burrs near the wafer 4 surface. This avoids damage to the wafer 4 caused by tip discharge from the wafer fixing module 2, thus improving wafer quality.
[0030] The sputtering apparatus provided in this application provides a wafer fixing module 2 disposed on one side of the base 1 where the wafer 4 is disposed, and an additional charge transfer module 3 is added. The charge transfer module 3 is disposed on the wafer fixing module 2, and the charge accumulated on the wafer fixing module 2 can be discharged through the charge transfer module 3, avoiding the tip discharge phenomenon caused by burrs on the surface of the wafer fixing module 2, thereby effectively avoiding damage to the wafer 4 caused by the tip discharge phenomenon of the wafer fixing module 2, and improving the wafer quality.
[0031] Further reference Figure 1 The charge transfer module 3 is connected to a fixed potential.
[0032] Specifically, one end of the charge transfer module 3 is placed on the wafer fixing module 2, and the other end of the charge transfer module 3 is connected to a fixed potential. When the charge accumulated on the wafer fixing module 2 reaches a certain amount, a potential difference is generated between the two ends of the charge transfer module 3, thereby transferring a large amount of charge accumulated on the wafer fixing module 2 to the fixed potential end. This effectively avoids the phenomenon of tip discharge caused by burrs on the surface of the wafer fixing module 2, and thus effectively avoids damage to the wafer 4 caused by tip discharge caused by the wafer fixing module 2, thereby improving the wafer quality.
[0033] Further reference Figure 1 The charge transfer module 3 is set to contact the base 1.
[0034] Specifically, one end of the charge transfer module 3 is placed on the wafer fixing module 2, and the other end of the charge transfer module 3 is placed in contact with the base 1, so that the charge accumulated on the wafer fixing module 2 is directly transferred to the base 1, avoiding the accumulation of charge on the wafer fixing module 2, effectively avoiding the phenomenon of tip discharge caused by burrs on the surface of the wafer fixing module 2, and thus effectively avoiding damage to the wafer 4 caused by tip discharge of the wafer fixing module 2, thereby improving the wafer quality.
[0035] Furthermore, the charge transfer module includes a spring.
[0036] Specifically, by setting the charge transfer module as a spring, it is possible to prevent the charge transfer module from losing contact with the substrate due to slight movement during sputtering. This avoids the accumulation of a large amount of charge on the wafer fixing module, effectively preventing the point discharge phenomenon caused by burrs on the surface of the wafer fixing module, and thus effectively preventing damage to the wafer caused by the point discharge phenomenon of the wafer fixing module, thereby improving the wafer quality.
[0037] Furthermore, the charge transfer module is made of metal.
[0038] Specifically, setting the charge transfer module to be made of metal can effectively improve the rate at which the charge transfer module transfers the charge accumulated on the wafer fixing module, further effectively avoiding the phenomenon of tip discharge caused by burrs on the surface of the wafer fixing module, and thus effectively avoiding damage to the wafer caused by tip discharge of the wafer fixing module, thereby improving the wafer quality.
[0039] Further reference Figure 1 The wafer fixing module 2 includes a pressure ring 02.
[0040] Specifically, the wafer fixing module 2 is set as a pressure ring, which can be mechanically fixed to the wafer 4 to fix the wafer 4.
[0041] Furthermore, the base 1 includes a first base portion 11 and a second base portion 12, the first base portion 11 being disposed on the first surface, and the second base portion 12 being disposed on the side of the first base portion 11 away from the first surface;
[0042] The clamping ring 02 includes a first clamping ring portion 21 and a second clamping ring portion 22; the first clamping ring portion 21 is disposed in contact with the surface of the wafer 4 away from the first base portion 11 for fixing the wafer 4; the second clamping ring portion 22 is connected to the first clamping ring portion 21 and is disposed around the first base portion 11; the charge transfer module 3 is disposed on the surface of the second clamping ring portion 22 near the first base portion 11.
[0043] Specifically, by placing the charge transfer module 3 on the surface of the second pressure ring 22 near the first base 11, the design size of the charge transfer module 3 can be reduced, and the charge transfer module 3 can be effectively contacted with the first base 11. This avoids the slight movement of the charge transfer module 3 during sputtering, which could cause the charge transfer module 3 to lose contact with the first base 11. This effectively avoids the phenomenon of tip discharge caused by burrs on the surface of the wafer fixing module 2.
[0044] Furthermore, the wafer fixing module includes an electrostatic chuck.
[0045] Specifically, electrostatic chucks fix wafers using electrostatic adsorption. Their advantages include uniform adsorption across the wafer surface, preventing warping and deformation, and maintaining stable adsorption forces to ensure wafer processing precision. Electrostatic chucks also cause minimal contamination and damage to the wafer, making them suitable for high-vacuum environments. Semiconductor manufacturing involves multiple wafer processing steps, each requiring stable wafer fixation; electrostatic chucks are a core component in equipment used for etching, thin film deposition, and ion implantation.
[0046] Further reference Figure 1 The first surface of the base 1 includes a plurality of back air holes 5;
[0047] The base 1 blows back air onto the wafer 4 through multiple back air holes 5.
[0048] Specifically, when the base 1 blows back air to the wafer 4 through multiple back air holes 5, the wafer fixing module 2 can fix the wafer 4 on the first surface of the base 1 to avoid the wafer 4 from shifting and affecting the processing accuracy of the wafer 4.
[0049] Further reference Figure 1 Charge transfer module 3 is grounded.
[0050] Specifically, one end of the charge transfer module 3 is placed on the wafer fixing module 2, and the other end of the charge transfer module 3 is grounded. After the charge accumulates on the wafer fixing module 2, a potential difference is generated between the two ends of the charge transfer module 3, thereby transferring the charge accumulated on the wafer fixing module 2 to the fixed potential end. This avoids the accumulation of charge on the wafer fixing module 2, and further effectively avoids the phenomenon of tip discharge caused by burrs on the surface of the wafer fixing module 2. This further effectively avoids damage to the wafer 4 caused by tip discharge caused by the wafer fixing module 2, and further improves the wafer quality.
[0051] It should be understood that the various forms of processes shown above can be used to rearrange, add, or delete steps. For example, the steps described in this application can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this application can be achieved, and this is not limited herein.
[0052] The specific embodiments described above do not constitute a limitation on the scope of protection of this application. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the scope of protection of this application.
Claims
1. A sputtering apparatus, characterized in that, include: A base, the base including a first surface; A wafer fixing module is disposed on one side of the substrate and is used to fix the wafer to the first surface; A charge transfer module is disposed on the wafer fixing module and is used to export the charge accumulated on the wafer fixing module.
2. The sputtering apparatus according to claim 1, characterized in that, The charge transfer module is connected to a fixed potential.
3. The sputtering apparatus according to claim 1, characterized in that, The charge transfer module is positioned in contact with the base.
4. The sputtering apparatus according to claim 3, characterized in that, The charge transfer module includes a spring.
5. The sputtering apparatus according to claim 1, characterized in that, The charge transfer module is made of metal.
6. The sputtering apparatus according to claim 1, characterized in that, The wafer fixing module includes a pressure ring.
7. The sputtering apparatus according to claim 6, characterized in that, The base includes a first base portion and a second base portion, the first base portion is disposed on the first surface, and the second base portion is disposed on the side of the first base portion away from the first surface; The pressure ring includes a first pressure ring portion and a second pressure ring portion; the first pressure ring portion is disposed in contact with the surface of the wafer away from the first base portion for fixing the wafer; the second pressure ring portion is connected to the first pressure ring portion and is disposed around the first base portion; the charge transfer module is disposed on the surface of the second pressure ring portion near the first base portion.
8. The sputtering apparatus according to claim 1, characterized in that, The wafer fixing module includes an electrostatic chuck.
9. The sputtering apparatus according to claim 1, characterized in that, The first surface of the base includes a plurality of back air holes; The base plate blows back air onto the wafer through multiple back air holes.
10. The sputtering apparatus according to claim 1, characterized in that, The charge transfer module is grounded.