Led light source with high photosynthetic quantum efficiency

Abstract

The utility model belongs to LED technical field especially relates to a high light synthesis quantum efficiency's LED light source, including support, TiO2 white glue layer, lens encapsulation gum and four LED wafer. The utility model discloses through the accurate layout four LED wafers in the support function area negative pole, and ensure that the lowest plane of TiO2 white glue layer is 1-3 microns lower than the highest plane of LED wafer, the luminous angle setting of LED light source after encapsulation is 120-140 degrees, realizes LED wafer layout optimization, TiO2 white glue layer process optimization, lens reflection angle design optimization, can finally ensure that LED light source still reaches 85% photoelectric conversion efficiency under single 2W power, reduces 30% electric power consumption compared with the past, solves the contradiction of high power and high efficiency, energy -conserving from the root.

Description

Technical Field

[0001] This utility model belongs to the field of LED technology, and in particular relates to an LED light source with high photosynthetic quantum efficiency. Background Technology

[0002] In current large-scale agricultural planting facilities, LED plant lighting needs to balance "high power coverage of large area" and "high photosynthetic quantum efficiency" while meeting the requirements of energy saving and consumption reduction. However, the existing 3.5*3.5mm size packaging technology has a clear performance bottleneck.

[0003] According to industry tests, while existing packaging technology can achieve a photoelectric conversion efficiency of 85% with a single 1.5W power output of plant red (peak wavelength 655-665nm), the efficiency significantly decreases to 80% when the power is increased to 2W to expand the illumination coverage. The core problem lies in the fact that with only a single chip within a 3.5*3.5mm size, the photon output concentration is insufficient at high power, leading to a decrease in the directional transmission rate of photosynthetically effective photons. Furthermore, the reflection angle process used with the single chip is not adapted to high-power scenarios, resulting in 18%-22% of the effective light being scattered due to the single reflection path. Additionally, the conventional transparent adhesive process fails to control the refraction of the light output from the single chip at 2W power, causing an additional 6%-9% photon loss.

[0004] To maintain the target efficiency of 85% for plant red (peak wavelength of 655-665nm), the industry needs to replace one 2W light source with two 1.5W light sources stacked together. This would increase the power consumption of lighting in a single area by about 30% per thousand lights. At the same time, doubling the number of light sources would also exacerbate the waste of production resources and the pollution of electronic waste after disposal, which goes against the trend of energy conservation and environmental protection. Utility Model Content

[0005] The purpose of this invention is to provide an LED light source with high photosynthetic quantum efficiency, aiming to solve at least one of the aforementioned problems in the prior art. This invention achieves a stable 85% photoelectric conversion efficiency at a single LED power of 2W through precise multi-chip layout within 3.8*3.8mm, optimized reflection angle process, lens design, and white adhesive process, while reducing power consumption by 30% compared to other technologies, thus fundamentally resolving the contradiction between high power and high efficiency, and energy saving.

[0006] To achieve the above objectives, this utility model provides an LED light source with high photosynthetic quantum efficiency, comprising a bracket, a TiO2 white glue layer, a lens encapsulating glue, and four LED chips;

[0007] The support is a three-layer structure comprising a support ceramic layer in the middle, a support functional area layer above the support ceramic layer, and a support electrode area layer below the support ceramic layer. The support functional area layer includes a support functional area positive electrode and a support functional area negative electrode, and the support electrode area layer includes a support electrode area positive electrode and a support electrode area negative electrode.

[0008] All four LED chips are disposed on the negative electrode of the functional area of ​​the bracket, and each LED chip is connected to the positive electrode and the negative electrode of the bracket electrode area by gold wire bonding;

[0009] The TiO2 white glue layer is evenly distributed in the edge area of ​​the bracket by dispensing or spraying glue equipment, forming a concave structure with a higher outer surface and a lower inner surface. The lowest plane of the TiO2 white glue layer is 1-3 μm lower than the highest plane of the LED chip, and the angle formed by the tangent of the concave surface of the TiO2 white glue layer and the horizontal line is less than 10 degrees.

[0010] The lens encapsulating adhesive is applied to each LED chip by a mold on a mold-top machine, thereby encapsulating them into an LED light source.

[0011] The four LED chips are arranged in a rectangular row, and the spacing between any two adjacent LED chips is 0.08-0.1 mm.

[0012] The negative electrode of the bracket functional area is provided with a rectangular LED chip area. The four LED chips are arranged in a rectangular row in the rectangular LED chip area. The length D1 of one side of the rectangular LED chip area is 2.32-2.45mm, and the length D2 of the other side is greater than 2.45mm.

[0013] The dimensions of all four LED chips are less than 45mil*45mil.

[0014] The gold wire bonding joints connecting each LED chip to the positive and negative electrodes of the bracket electrode region fall within a circle with a diameter of 3.2 mm.

[0015] The material of the functional area layer of the support is the same as that of the electrode area layer of the support, including a copper plating layer with a thickness of 55±15μm, a nickel plating layer with a thickness of ≥3μm, a palladium plating layer with a thickness of ≥0.05μm, a gold plating layer with a thickness of ≥0.075μm, or a silver plating layer with a thickness of ≥0.075μm.

[0016] The ceramic layer of the support is made of aluminum nitride ceramic or alumina ceramic with a thickness of 0.38±0.038mm.

[0017] The high photosynthetic quantum efficiency LED light source provided in this utility model embodiment has at least one of the following technical effects: The high photosynthetic quantum efficiency LED light source of this utility model, by precisely arranging four LED chips in the negative electrode of the bracket functional area, and ensuring that the lowest plane of the TiO2 white glue layer is 1-3μm lower than the highest plane of the LED chip, sets the emission angle of the packaged LED light source to 120-140 degrees, thereby optimizing the LED chip layout, optimizing the TiO2 white glue layer process, and optimizing the lens reflection angle design. Ultimately, it can ensure that the LED light source can still stably achieve a photoelectric conversion efficiency of 85% at a single LED power of 2W, reducing power consumption by 30% year-on-year, and fundamentally solving the contradiction between high power and high efficiency and energy saving. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 A planar schematic diagram of an LED light source with high photosynthetic quantum efficiency provided in one embodiment of the present invention.

[0020] Figure 2 for Figure 1 A schematic diagram of the support structure for the high photosynthetic quantum efficiency LED light source in the embodiment shown in the image.

[0021] Figure 3 A planar schematic diagram of an LED light source with high photosynthetic quantum efficiency provided in another embodiment of this utility model.

[0022] Figure 4 for Figure 3 A schematic diagram of the support structure for the high photosynthetic quantum efficiency LED light source in the embodiment.

[0023] Figure 5 This is an LED chip layout diagram of a high photosynthetic quantum efficiency LED light source according to an embodiment of the present invention.

[0024] Figure 6 This is a diagram showing the distribution of adhesive application points during the packaging of an LED light source with high photosynthetic quantum efficiency, according to an embodiment of this utility model.

[0025] Figure 7 This is a distribution diagram of the self-leveling region of the white adhesive during the packaging of an LED light source with high photosynthetic quantum efficiency according to an embodiment of this utility model.

[0026] Figure 8This is a schematic diagram of the structure of the TiO2 white glue layer after packaging the LED light source with high photosynthetic quantum efficiency according to an embodiment of the present invention.

[0027] Figure 9 This is a schematic diagram of the functional area layer of the support structure for the high photosynthetic quantum efficiency LED light source according to an embodiment of the present invention.

[0028] Figure 10 This is a schematic diagram of the xyz axis division of the LED light source with high photosynthetic quantum efficiency according to an embodiment of the present invention.

[0029] Figure 11 The lens formed by the lens encapsulant of the high photosynthetic quantum efficiency LED light source according to an embodiment of this utility model satisfies the relationship between the x-axis and z-axis.

[0030] Figure 12 The lens formed by the lens encapsulant of the high photosynthetic quantum efficiency LED light source according to an embodiment of this utility model satisfies the relationship between the y-axis and z-axis.

[0031] Figure 13 This is a diagram showing the emission angle of an LED light source with high photosynthetic quantum efficiency according to an embodiment of the present invention.

[0032] Figure 14 This is a simulation diagram of the uniform light distribution of an LED light source with high photosynthetic quantum efficiency according to an embodiment of this utility model.

[0033] The following are the labeling elements in the figure:

[0034] 1—Positive electrode of the stent functional area; 2—Negative electrode of the stent functional area; 3—Ceramic layer of the stent.

[0035] 4—Positive electrode of the support electrode region; 5—Negative electrode of the support electrode region; 6—Heat-conducting layer of the support electrode region.

[0036] 7—LED chip; 8—Reference point; 9—Through hole

[0037] 10 — Spacing; 11 — Position of white glue dot; 12 — TiO2 white glue layer

[0038] 13—White glue slightly concave angle. Detailed Implementation

[0039] The embodiments of this utility model are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The following description is based on the accompanying drawings. Figures 1-14 The described embodiments are exemplary and intended to explain embodiments of the present invention, and should not be construed as limiting the present invention.

[0040] In the description of the embodiments of this utility model, it should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. They are only for the convenience of describing the embodiments of this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0041] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.

[0042] In this embodiment of the invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this embodiment of the invention according to the specific circumstances.

[0043] In one embodiment of this utility model, such as Figures 1-4 As shown, a high photosynthetic quantum efficiency LED light source is provided, including a bracket, a TiO2 white adhesive layer 12, a lens encapsulant and four LED chips 7.

[0044] Furthermore, the support is a three-layer structure comprising a support ceramic layer 3 located in the middle, a support functional area layer located above the support ceramic layer 3, and a support electrode area layer located below the support ceramic layer 3. The support functional area layer includes a support functional area positive electrode 1 and a support functional area negative electrode 2, and the support electrode area layer includes a support electrode area positive electrode 4 and a support electrode area negative electrode 5.

[0045] All four LED chips 7 are disposed on the negative electrode 2 of the functional area of ​​the bracket, and are connected to the positive electrode 4 and the negative electrode 5 of the bracket electrode area by gold wire bonding.

[0046] The TiO2 white adhesive layer 12 is evenly distributed in the edge area of ​​the bracket using dispensing or spraying equipment, and after free-flowing and leveling across the entire encapsulation surface, it forms a concave structure with a higher outer surface and a lower inner surface. The lowest plane of the TiO2 white adhesive layer 12 is 1-3 μm lower than the highest plane of the LED chip 7, and the micro-concave angle 13 formed by the tangent of the concave surface of the TiO2 white adhesive layer 12 and the horizontal line is less than 10 degrees (see...). Figure 8 Specifically, the concave angle of the white glue can be 9 degrees, 8 degrees, 7 degrees, or 6 degrees, which can effectively improve the light output efficiency and the photosynthetic quantum efficiency / photoelectric conversion efficiency of plants.

[0047] The lens encapsulating adhesive is applied to each of the LED chips 7 by a mold on a mold-top machine, thereby encapsulating them into an LED light source.

[0048] Furthermore, the lens encapsulating adhesive forms chamfers around the lens perimeter.

[0049] The high photosynthetic quantum efficiency LED light source provided in this embodiment of the invention achieves this by precisely arranging four LED chips 7 within the negative electrode 2 of the bracket functional area, and ensuring that the lowest plane of the TiO2 white adhesive layer 12 is 1-3 μm lower than the highest plane of the LED chip 7. This prevents the LED chips from sticking together and reducing the photoelectric conversion efficiency of the LED light source. The emission angle of the packaged LED light source is set to 120-140 degrees, achieving optimized LED chip 7 layout, optimized TiO2 white adhesive layer 12 process, and optimized lens reflection angle design. Ultimately, this ensures that the LED light source can achieve a stable photoelectric conversion efficiency of 85% even at a single LED power of 2W, reducing power consumption by 30% compared to the previous model, thus fundamentally solving the contradiction between high power and high efficiency, and energy saving. Specifically, the lowest plane of the TiO2 white adhesive layer 12 is 1 μm, 2 μm, or 3 μm lower than the highest plane of the LED chip 7.

[0050] Preferably, the light-emitting angle of the packaged LED light source is 120-140 degrees.

[0051] In this embodiment of the utility model, see Figure 1 and 3 The upper and lower layers of the three-layer structure (i.e., the support functional area layer and the support electrode area layer) are connected by through-holes 9. The number of through-holes 9 is greater than 2N (N≥2), which can ensure the thermal conductivity of the LED light source product and effectively reduce thermal resistance. For example, N can be 3, 4, 5 or 6, then the number of through-holes 9 can be 7, 9, 11, 13, etc.

[0052] In one embodiment of this utility model, such as Figure 5As shown, the four LED chips 7 are arranged in a rectangular array. The spacing 10 between any two adjacent LED chips 7 is 0.08-0.1 mm, specifically 0.08 mm, 0.09 mm, or 0.1 mm. This spacing allows for gaps between the LED chips, improving the photoelectric efficiency of the LED light source (i.e., increasing the photosynthetic quantum efficiency). For example, the spacing 10 between any two adjacent LED chips 7 can be 0.08 mm, 0.09 mm, or 0.1 mm. Within this size range of spacing 10, four LED chips 7 can be effectively arranged in a rectangular array in a relatively small area.

[0053] Furthermore, see Figure 3 and 4 It is understood that in another embodiment, the support electrode region layer further includes a support electrode region thermal conductive layer 6, which is located between the support electrode region positive electrode 4 and the support electrode region negative electrode 5.

[0054] In one embodiment of this utility model, see Figure 5 The negative electrode 2 of the bracket functional area is provided with a rectangular LED chip area, and four LED chips 7 are arranged in a rectangular row in the rectangular LED chip area. Figure 9 As shown, the length D1 of one side of the rectangular LED chip region is 2.32-2.45 mm, and the length D2 of the other side is greater than 2.45 mm. Specifically, as... Figure 1 and 3 As shown, at least three adjacent sides of the rectangular LED chip area of ​​the negative electrode 2 in the bracket functional area are respectively provided with a 0.08mm square reference base point 8. Based on the three reference base points 8, four LED chips 7 are arranged to ensure the rectangular arrangement of the four LED chips 7, thereby ensuring that the optical structure design of the LED light source product is not misaligned.

[0055] Furthermore, the length D1 of one side of the rectangular LED chip area can be 2.32mm, 2.35mm, 2.40mm, 2.43mm, or 2.45mm. The length D2 of the other side of the rectangular LED chip area can be 2.45mm, 2.48mm, 2.50mm, or 2.53mm.

[0056] In one embodiment of this utility model, see Figure 5 The four LED chips 7 all have an external dimension of less than 45mil*45mil. This maximizes the utilization rate of the LED light source within its package size, improves the photoelectric conversion efficiency of the LED light source, and thus enhances the photosynthetic quantum efficiency of the LED light source.

[0057] In one embodiment of this utility model, such as Figure 5As shown, the gold wire solder joints connecting each LED chip 7 to the positive electrode 4 and the negative electrode 5 of the bracket electrode region fall within a circle with a diameter of 3.2 mm. This design prevents exposed gold wires, ensures that the lens completely covers the soldered gold wires, and thus improves the overall protection level of the LED light source.

[0058] In one embodiment of this utility model, such as Figure 2 and 4 As shown, the material of the functional area layer of the support is the same as that of the electrode area layer of the support, including a copper plating layer with a thickness of 55±15μm, a nickel plating layer with a thickness of ≥3μm, a palladium plating layer with a thickness of ≥0.05μm, a gold plating layer with a thickness of ≥0.075μm, or a silver plating layer with a thickness of ≥0.075μm. This facilitates gold wire bonding, optimizes the reliability of the LED light source, and improves the sulfidation capability of the LED light source.

[0059] The thickness of the copper plating layer can be 40μm, 55μm, or 70μm. The thickness of the electroless nickel plating layer can be 3μm, 4μm, or 5μm. The thickness of the electroless palladium-gold plating layer can be 0.05μm, 0.06μm, or 0.07μm. The thickness of the electroless gold plating layer is 0.075μm, 0.085μm, or 0.095μm. The thickness of the electroless silver plating layer is 0.075μm, 0.085μm, or 0.095μm.

[0060] In one embodiment of this invention, the ceramic layer 3 of the support is made of aluminum nitride ceramic or alumina ceramic with a thickness of 0.38±0.038mm. A thinner layer reduces the thermal resistance of the material, thereby improving the photoelectric conversion efficiency of the LED light source, that is, improving the photosynthetic quantum efficiency of the LED light source. However, it cannot be too thin, as the ceramic support is relatively brittle and easily breaks if too thin, thus affecting the reliability of the LED light source.

[0061] In one embodiment of this invention, the TiO2 white glue layer 12 is formed by preparing a white glue solution, wherein the white glue solution is prepared by mixing TiO2 powder and silica gel at a ratio of (1-10) g: 100 g. This configuration improves the reflectivity of the glue, thereby enhancing the photoelectric conversion efficiency of the LED light source and increasing its photosynthetic quantum efficiency. Furthermore, covering the silver glue layer and functional area layer prevents VOC gases such as H2S from reacting with the silver, thus avoiding any impact on the reliability of the LED light source.

[0062] In one embodiment of this utility model, see Figures 10-12 The lens formed by the lens encapsulating adhesive satisfies the following functional relationship between the x-axis and z-axis:

[0063] When 0 ≤ x ≤ 1.60;

[0064] ;

[0065] When 1.60 ≤ x ≤ 1.89;

[0066] ;

[0067] When x = 1.9;

[0068] ;

[0069] When -1.90 ≤ x ≤ 0, it is symmetric about z = 0;

[0070] The lens formed by the lens encapsulant satisfies the same functional relationship between the y-axis and z-axis as that between the x-axis and z-axis. This achieves symmetrical light output, uniform optical extraction, and improves the photoelectric conversion efficiency of the LED light source, which in turn improves the photosynthetic quantum efficiency of the LED light source.

[0071] Furthermore, from Figure 10 As can be seen from 13-14, the high photosynthetic quantum efficiency LED light source of this embodiment has a lens diameter greater than 3.8mm, which is beneficial for light extraction and improves the luminous efficiency of the LED light source. At the same time, the chamfered edge design of the lens helps to increase the lens size, which is beneficial for light extraction from the LED light source and improves the luminous efficiency of the LED light source.

[0072] This utility model embodiment also provides an LED light source with high photosynthetic quantum efficiency, which is formed by the following encapsulation method, including the following steps:

[0073] S100: The four LED chips 7 are placed in the negative electrode 2 of the functional area of ​​the bracket, and fixed by die bonding machine with insulating glue or silver glue. After die bonding, the four LED chips 7 are baked in an oven at 150-160℃ for 2h±10min to completely fix the four LED chips 7 in the negative electrode 2 of the functional area of ​​the bracket.

[0074] S200: The four LED chips 7 are connected to the positive electrode 4 and the negative electrode 5 of the bracket electrode area by gold wire bonding using a gold wire bonding machine;

[0075] S300: Prepare a white glue solution, wherein the white glue solution is prepared by mixing TiO2 powder and silica gel in a certain proportion;

[0076] S400: Pour the prepared white glue solution into the glue tank of the dispensing machine. After the glue and bubbles are removed, dispense the white glue solution into the edge area of ​​the bracket. After dispensing, bake at 80°C for 0.5 hours, and then bake at 160°C for 10 minutes. The specific dispensing method is as follows: Figure 6The dots for applying white glue are shown. A total of 8 dots of white glue are applied at position 11. The outer shape formed by the white glue after application is as follows. Figure 7 The image shows a TiO2 white adhesive layer 12 formed within a 3.5*3.5mm square region. The amount of adhesive at each point is designed to be 0.0001-0.0003mL to ensure natural leveling and an inwardly concave structure. See details below. Figure 8 ;

[0077] S500: Prepare the lens encapsulating adhesive solution, pour the prepared lens encapsulating adhesive solution into the glue tank of the mold top machine, after the glue and bubbles are discharged, install the mold top mold for mold top encapsulation, and after encapsulation, bake at 160℃ for 4 hours.

[0078] S600: After baking, cut with a cutting device. After cutting, bake at 160℃ for 30 minutes. After baking, spectrally separate and tape according to the specified optical, color and electrical parameters.

[0079] Taking plant red (peak wavelength 655-665nm) as an example:

[0080]

[0081] The data above shows that the high photosynthetic quantum efficiency LED light source provided by this embodiment can replace the current brightest solution with the same photosynthetic quantum efficiency of 800mA at 1500mA.

[0082] In other words, the high photosynthetic quantum efficiency LED light source provided in this embodiment has a power P = 1.5 * 1.981 W = 2.9715 W, and its photosynthetic quantum efficiency is equivalent to the brightest current solution P = 0.8 * 1.955 = 1.564 W. That is, for the same 100W lamp, the high photosynthetic quantum efficiency LED light source provided in this embodiment requires 34 pieces, while the brightest current solution requires 64 pieces, saving a full 30 pieces. This also saves lamp design space and reduces costs.

[0083] Compared with the prior art, the LED light source with high photosynthetic quantum efficiency provided by the present invention has the following characteristics:

[0084] 1. Under the same current conditions, the photoelectric conversion efficiency is 5% higher than the highest existing solution on the market;

[0085] 2. Under the condition that the lighting fixtures require the same photosynthetic quantum efficiency, the number of light sources used in this invention is reduced by 30-40%;

[0086] 3. By controlling the functional relationship between the chip spacing 10 and the x-axis and Z-axis, and y-axis and Z-axis of the lens, the emission angle is precisely matched to improve the efficiency of photosynthetic quantum.

[0087] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A high photosynthetic quantum efficiency LED light source, characterized in that, Includes a support frame, a TiO2 white adhesive layer, a lens encapsulant, and four LED chips; The support is a three-layer structure comprising a support ceramic layer in the middle, a support functional area layer above the support ceramic layer, and a support electrode area layer below the support ceramic layer. The support functional area layer includes a support functional area positive electrode and a support functional area negative electrode, and the support electrode area layer includes a support electrode area positive electrode and a support electrode area negative electrode. All four LED chips are disposed on the negative electrode of the functional area of ​​the bracket, and each LED chip is connected to the positive electrode and the negative electrode of the bracket electrode area by gold wire bonding; The TiO2 white glue layer is evenly distributed in the edge area of ​​the bracket by dispensing or spraying glue equipment, forming a concave structure with a higher outer surface and a lower inner surface. The lowest plane of the TiO2 white glue layer is 1-3 μm lower than the highest plane of the LED chip, and the angle formed by the tangent of the concave surface of the TiO2 white glue layer and the horizontal line is less than 10 degrees. The lens encapsulating adhesive is applied to each LED chip by a mold on a mold-top machine, thereby encapsulating them into an LED light source.

2. The LED light source with high photosynthetic quantum efficiency according to claim 1, characterized in that, The four LED chips are arranged in a rectangular row, and the spacing between any two adjacent LED chips is 0.08-0.1 mm.

3. The LED light source with high photosynthetic quantum efficiency according to claim 2, characterized in that, The negative electrode of the bracket functional area is provided with a rectangular LED chip area. The four LED chips are arranged in a rectangular row in the rectangular LED chip area. The length D1 of one side of the rectangular LED chip area is 2.32-2.45mm, and the length D2 of the other side is greater than 2.45mm.

4. The LED light source with high photosynthetic quantum efficiency according to claim 3, characterized in that, The dimensions of all four LED chips are less than 45mil*45mil.

5. The LED light source with high photosynthetic quantum efficiency according to claim 1, characterized in that, The gold wire bonding joints connecting each LED chip to the positive and negative electrodes of the bracket electrode region fall within a circle with a diameter of 3.2 mm.

6. The LED light source with high photosynthetic quantum efficiency according to claim 1, characterized in that, The material of the functional area layer of the support is the same as that of the electrode area layer of the support, including a copper plating layer with a thickness of 55±15μm, a nickel plating layer with a thickness of ≥3μm, a palladium plating layer with a thickness of ≥0.05μm, a gold plating layer with a thickness of ≥0.075μm, or a silver plating layer with a thickness of ≥0.075μm.

7. The LED light source with high photosynthetic quantum efficiency according to claim 1, characterized in that, The ceramic layer of the support is made of aluminum nitride ceramic or alumina ceramic with a thickness of 0.38±0.038mm.

Images