A TGV PVD substrate stage

Abstract

This utility model discloses a TGV PVD substrate stage, including a TGV substrate stage structure and a substrate structure. The substrate stage structure has a crisscross-shaped support perimeter protruding from its four sides and central area on the main bearing surface. The support perimeter is higher than the surface of the substrate stage to avoid direct contact with the substrate. The suspended area isolated by this support perimeter has four rectangularly arranged suspended pits integrally recessed. These pits are lower than the bearing surface of the substrate stage, and their center points coincide with the center point of the suspended area. The TGV substrate of the substrate structure first deposits an A-side seed layer using a conventional substrate stage. After flipping, the A-side seed layer is supported downwards on the support perimeter, and a B-side seed layer is deposited using this substrate stage. This design ensures a safe distance between the TGV substrate and the substrate stage in the suspended state to avoid arcing abnormalities. Simultaneously, the close contact of the support perimeter improves cooling efficiency, prevents substrate warping, and ensures continuous metal seed layer deposition on the sidewalls of all TGV vias.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor packaging, specifically a TGV PVD substrate stage. Background Technology

[0002] TGV technology, leveraging the high-frequency characteristics, excellent insulation properties, and low coefficient of thermal expansion of glass substrates, is becoming a disruptive solution in 5G communication, optoelectronics, and advanced packaging. Large-size TGV glass substrates overcome the bottlenecks in computing chip packaging through three core technological breakthroughs: In terms of material performance optimization, high-alumina-silicon glass or borosilicate glass systems are used to reduce alkali metal ion content, suppressing reliability risks caused by ion migration, while simultaneously improving the substrate's bending strength to meet the mechanical stability requirements of thin-film packaging; In terms of process innovation, femtosecond laser drilling replaces traditional mechanical drilling, reducing glass edge chipping, and combining vacuum sputtering + copper plating processes to achieve through-hole metallization, solving the problem of interfacial bonding between glass and metal; In terms of cost control, large-scale production of glass substrates, optimized laser drilling efficiency, and simplified metallization processes reduce the unit area cost by 30%-40% compared to traditional organic substrates. Furthermore, in terms of performance applications, its core advantages are further highlighted, with high-density interconnects supporting I / O densities of 1000-2000 per mm. 2 Compared to ceramic substrates, this technology offers 2-3 times the performance improvement, meeting the multi-chip integration needs of computing devices such as GPUs and AI chips. High-frequency signal transmission in the millimeter-wave band exhibits insertion loss <0.3dB / cm and phase shift <0.5° / cm, far superior to organic substrates. This reduces signal attenuation in 5G RF modules. Ultra-large size packaging supports chips ≥50mm×50mm, with substrate warpage controlled at <50μm / m, avoiding the risk of chip cracking during packaging. This technology will not only accelerate the increase in computing power density of AI training chips and the upgrade of port speeds in data center switches, but will also drive the domestic semiconductor industry chain to extend upstream towards high-end packaging. Currently, China has achieved domestic production of high-alumina-silicon glass substrates, and breakthroughs have also been achieved in supporting laser drilling equipment and vacuum electroplating equipment, laying a foundation for the large-scale application of TGV technology.

[0003] The core process of TGV technology lies in through-hole metallization, which requires the deposition of a continuous metal seed layer film inside the TGV through-hole using PVD magnetron sputtering. During the PVD process, an RF bias is usually applied to the substrate stage to form a plasma sheath layer above the substrate stage, allowing ionized metal target particles to be deposited more quickly on the sidewalls of the TGV through-hole. However, since the substrate stage is made of metal and the TGV substrate is made of glass, there is a significant potential difference between the two under the RF bias. When the metal seed layer has been deposited on the back of the TGV substrate, arcing abnormalities can easily occur in the suspended area of ​​the substrate when the back of the TGV substrate and the substrate stage are in direct contact or very close. Utility Model Content

[0004] This invention provides a TGV PVD substrate stage that solves the problems mentioned in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution:

[0006] A TGV PVD substrate stage, comprising:

[0007] The TGV substrate stage structure provides support for the substrate.

[0008] The substrate structure is positioned above the TGV substrate stage structure.

[0009] The TGV substrate stage structure includes a substrate stage body. The four sides and the central area of ​​the substrate stage body bearing surface are integrally raised with a grid-shaped support rim. The bearing surface of the substrate stage body has four suspended pits integrally recessed in the suspended area isolated by the support rim.

[0010] As a preferred technical solution of this utility model, the grid-shaped support edge is 0.3 to 2 mm higher than the surface of the substrate stage body, thereby forming a suspended area on the bearing surface of the substrate stage body and avoiding direct contact between the substrate stage body and the surface of the substrate structure.

[0011] As a preferred embodiment of this utility model, the aforementioned suspended pits are arranged in a rectangular array on the bearing surface of the substrate stage body.

[0012] As a preferred embodiment of the present invention, the aforementioned suspended pits are all 0.3 to 1 mm lower than the substrate stage body bearing surface, and the aforementioned suspended pits are all rectangular, and the side length of the aforementioned suspended pits is all set to 20% to 30% of the side length of the substrate structure.

[0013] As a preferred embodiment of this utility model, the center point of the suspended pits coincides with the center point of the suspended area isolated by the supporting perimeter.

[0014] As a preferred technical solution of this utility model, the substrate structure includes a TGV substrate, which is made of glass. Initially, a seed layer on the A-side is deposited in conjunction with a conventional substrate stage with the same height as the main body of the substrate stage within the grid area.

[0015] As a preferred technical solution of this utility model, the TGV substrate is rotated 180 degrees and positioned on the support perimeter of the substrate stage body bearing surface with the A-side seed layer facing downward. After the A-side seed layer is positioned on the support perimeter, a continuous B-side seed layer is deposited on the upper surface of the TGV substrate in the TGV through-hole by PVD magnetron sputtering.

[0016] The present invention has the following advantages:

[0017] By configuring the TGV substrate stage and substrate structure, the substrate stage body of the TGV substrate stage structure has a crisscross-shaped support perimeter on all four sides and in the central area. The support perimeter is higher than the surface of the substrate stage body to avoid direct contact with the substrate. The suspended area isolated by the support perimeter has four rectangular arrayed suspended pits. The suspended pits are lower than the surface of the substrate stage body and their center points coincide with the center point of the suspended area. This design ensures that the distance between the TGV substrate and the substrate stage is within a safe range when the substrate is suspended, thus avoiding arcing abnormalities. At the same time, the distance between other areas of the substrate stage and the TGV substrate is small, which can improve the cooling efficiency of the TGV substrate, avoid warping due to poor cooling, and ensure that a continuous seed layer can be deposited on the sidewalls of all TGV vias. Attached Figure Description

[0018] Figure 1 A schematic diagram of the thickened three-dimensional structure of the TGV PVD substrate stage for easy understanding;

[0019] Figure 2 This is an exploded view of the TGV substrate stage structure and substrate structure in the TGV PVD substrate stage;

[0020] Figure 3 This is a cross-sectional view of the substrate structure in the TGV PVD substrate stage;

[0021] Figure 4 This is a schematic diagram of the TGV substrate stage structure in a TGV PVD substrate stage;

[0022] Figure 5 Taichung, for TGV PVD substrate Figure 3 Enlarged view of point A in the middle;

[0023] Figure 6 This is a schematic diagram of the substrate structure in the TGV PVD substrate stage.

[0024] In the figure: 1. TGV substrate stage structure; 11. Substrate stage body; 12. Supporting edge; 13. Suspension pit; 2. Substrate structure; 21. TGV substrate; 22. Seed layer on side B; 23. Seed layer on side A. Detailed Implementation

[0025] The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0026] It should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", and "outer" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0027] Please see Figures 1-6 A TGV PVD substrate stage, comprising:

[0028] TGV substrate stage structure 1 provides support for the substrate;

[0029] The substrate structure 2 is positioned above the TGV substrate stage structure 1. Based on the electrical and physical properties of glass material, it achieves high-density, low-loss, and low-cost three-dimensional interconnection through a vertical through-hole structure, becoming the underlying support for AI computing power, 5G communication, and optoelectronic integration.

[0030] The TGV substrate stage structure 1 includes a substrate stage body 11. A grid-shaped support perimeter 12 is integrally protruding from the four sides and central area of ​​the substrate stage body 11's bearing surface. The grid-shaped support perimeter 12 is 0.3 to 2 mm higher than the surface of the substrate stage body 11, thus forming a suspended area on the bearing surface of the substrate stage body 11 to prevent direct contact between the substrate stage body 11 and the surface of the substrate structure 2. Four suspended pits 13 are integrally recessed in the suspended area isolated by the support perimeter 12 on the bearing surface of the substrate stage body 11. These suspended pits 13 are arranged in a rectangular array on the bearing surface of the substrate stage body 11. Each of these suspended pits 13 is 0.3 to 1 mm lower than the bearing surface of the substrate stage body 11, and each of these suspended pits 13 is rectangular. The side length of each of these suspended pits 13 is set to 20% to 30% of the side length of the substrate structure 2. The center point of each of these suspended pits 13 coincides with the center point of the suspended area isolated by the support perimeter 12.

[0031] The substrate structure 2 includes a TGV substrate 21, which is made of glass. Initially, a seed layer 23 on the A side is deposited in conjunction with a conventional substrate stage with the same height as the substrate stage body 11 in the grid area. The TGV substrate 21 is rotated 180 degrees so that the seed layer 23 on the A side is supported and positioned on the support edge 12 of the substrate stage body 11. After the seed layer 23 on the A side is supported and positioned on the support edge 12, a continuous seed layer 22 on the B side is deposited on the upper surface of the TGV substrate 21 in the TGV via by PVD magnetron sputtering. At this time, the distance between the TGV substrate 21 and the substrate stage body 11 at the point where it is warped and drooping due to gravity is within a safe range, and there is no risk of arcing due to excessive proximity.

[0032] During operation, a seed layer 23 on side A of the TGV substrate 21 is first deposited on the substrate using a PVD magnetron sputtering apparatus on a standard substrate stage. Then, the substrate is rotated 180 degrees so that the seed layer 23 faces downwards and placed on the grid-shaped support perimeter 12 of the newly designed substrate stage body 11. At this point, the support perimeter 12 prevents the TGV substrate 21 from directly contacting the substrate stage body 11. Next, a seed layer 22 on side B of the TGV substrate 21 is deposited on the substrate using a PVD magnetron sputtering apparatus, while the TGV substrate 21 remains suspended. Some areas sag due to gravity correspond precisely to the suspended pits 13 of the substrate stage body 11. Due to the reduced height of the suspended pits 13, the seed layer 23 on the A-side maintains a safe distance from the substrate stage body 11, avoiding the arcing risk caused by the potential difference between the metal substrate stage and the glass substrate under RF bias. At the same time, the close contact of the supporting edge 12 ensures cooling efficiency, prevents the TGV substrate 21 from warping, and ensures that a continuous seed layer can be deposited on the sidewalls of all TGV vias, achieving stable TGV via metallization.

[0033] In summary, through the arrangement of the TGV substrate stage structure 1 and the substrate structure 2, the substrate stage body 11 of the TGV substrate stage structure 1 has a crisscross-shaped support perimeter 12 integrally protruding on the four sides and central area of ​​the bearing surface. The support perimeter 12 is higher than the surface of the substrate stage body 11 to avoid direct contact between the substrate and the substrate. The suspended area isolated by the support perimeter 12 has four rectangular arrayed suspended pits 13 integrally recessed. The suspended pits 13 are lower than the bearing surface of the substrate stage body 11 and their center points coincide with the center points of the suspended areas. This design can ensure that the distance between the TGV substrate 21 and the substrate stage in the suspended state is within a safe range to avoid arcing abnormalities (especially for TGV substrates 21 with a thickness of 0.6 mm or less). At the same time, the distance between other areas of the substrate stage and the TGV substrate 21 is small, which can improve the cooling efficiency of the TGV substrate 21, avoid warping due to poor cooling, and ensure that a continuous seed layer can be deposited on the sidewalls of all TGV vias.

[0034] In the implementation of this invention, firstly, based on the dimensions of the TGV substrate 21, the substrate stage body 11 is fabricated according to the CAD design, ensuring that the grid-shaped support perimeter 12 is 0.3 to 2 mm higher than the surface of the substrate stage body 11. Then, four rectangular arrayed suspended pits 13 are fabricated in the suspended area isolated by the support perimeter 12. The side length of each suspended pit 13 is 20% to 30% of the side length of the substrate structure 2, and its height is 0.3 to 1 mm lower than the bearing surface of the substrate stage body 11. Furthermore, the center point of the suspended pit 13 is aligned with the center of the suspended area of ​​the substrate. The points are aligned, and then the processed substrate stage body 11, support perimeter 12, and suspended pit 13 area are cleaned to remove surface oil, impurities, and oxide layers; the TGV substrate 21 is visually inspected for cracks, damage, and surface cleaning to remove residual contaminants to avoid affecting the deposition quality. Then, the designed TGV substrate stage structure 1 and ordinary substrate stage are installed into the PVD magnetron sputtering equipment, the substrate stage positioning accuracy is calibrated, and the equipment vacuum degree, RF bias voltage, target power, and other parameters are adjusted to meet the requirements of the seed layer deposition process.

[0035] After completing the preliminary preparations, a seed layer 23 on the A side of the TGV substrate 21 is first deposited using a PVD magnetron sputtering equipment on a standard substrate stage. Then, the substrate is rotated 180 degrees so that the seed layer 23 faces downwards and placed on the grid-shaped support edge 12 of the newly designed substrate stage body 11. At this point, the support edge 12 prevents the TGV substrate 21 from directly contacting the substrate stage body 11. Next, a seed layer 22 on the B side of the TGV substrate 21 is deposited using a PVD magnetron sputtering equipment. Meanwhile, the TGV substrate 2... The suspended portion, due to gravity, corresponds precisely to the suspended pit 13 of the substrate stage body 11. Due to the reduced height of the suspended pit 13, the seed layer 23 on the A-side maintains a safe distance from the substrate stage body 11, avoiding the arcing risk caused by the potential difference between the metal substrate stage and the glass substrate under RF bias. At the same time, the close contact of the supporting edge 12 ensures cooling efficiency, prevents the TGV substrate 21 from warping, and ensures that a continuous seed layer can be deposited on the sidewalls of all TGV vias, achieving stable TGV via metallization.

[0036] If the TGV substrate 21 needs to deposit multiple metal seed layers, the above process flow is repeated.

[0037] It should be noted that if a metal seed layer has already been deposited on the side of the TGV substrate 21 facing the substrate stage body 11, then the substrate stage designed in this scheme needs to be used, that is, a substrate stage with a low height in the middle area corresponding to the suspended part of the TGV substrate 21.

[0038] Finally, it should be noted that the above description is merely a preferred embodiment of this utility model and is not intended to limit the utility model. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. A TGV PVD substrate stage, characterized in that, include: The TGV substrate stage structure (1) provides support for the substrate; The substrate structure (2) is positioned above the TGV substrate stage structure (1); The TGV substrate stage structure (1) includes a substrate stage body (11). The four sides of the substrate stage body (11) and the central area are integrally raised with a grid-shaped support perimeter (12). The substrate stage body (11) has four suspended pits (13) integrally recessed in the suspended area isolated by the support perimeter (12) on the substrate stage body (11).

2. The TGV PVD substrate stage according to claim 1, characterized in that, The grid-shaped support edge (12) extends 0.3 to 2 mm above the surface of the substrate stage body (11), thereby forming a suspended area on the bearing surface of the substrate stage body (11) to avoid direct contact between the substrate stage body (11) and the surface of the substrate structure (2).

3. The TGV PVD substrate stage according to claim 1, characterized in that, The aforementioned craters (13) are arranged in a rectangular array on the bearing surface of the substrate stage body (11).

4. The TGV PVD substrate stage according to claim 1, characterized in that, The aforementioned craters (13) are all 0.3 to 1 mm lower than the bearing surface of the substrate stage body (11).

5. The TGV PVD substrate stage according to claim 1, characterized in that, All of these suspended pits (13) are set to be rectangular.

6. The TGV PVD substrate stage according to claim 1, characterized in that, The side length of each of the aforementioned ditch (13) is set to 20% to 30% of the side length of the substrate structure (2).

7. The TGV PVD substrate stage according to claim 1, characterized in that, The center point of the aforementioned suspended pit (13) coincides with the center point of the suspended area isolated by the supporting perimeter (12).

8. The TGV PVD substrate stage according to claim 1, characterized in that, The substrate structure (2) includes a TGV substrate (21), which is made of glass. Initially, a seed layer (23) on the A-side is deposited in conjunction with a conventional substrate stage with a height consistent with the substrate stage body (11) in the grid area.

9. The TGV PVD substrate stage according to claim 8, characterized in that, The TGV substrate (21) is rotated 180 degrees and positioned downwards on the support perimeter (12) of the substrate stage body (11) with the seed layer (23) on the A side supporting it.

10. The TGV PVD substrate stage according to claim 9, characterized in that, After the seed layer (23) on the A side is positioned on the support perimeter (12), a continuous seed layer (22) on the B side is deposited on the upper surface of the TGV substrate (21) in the TGV via by PVD magnetron sputtering.

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