A wafer exposure machine with an external variable light intensity attenuation device

Abstract

This invention belongs to the field of semiconductor manufacturing technology, specifically relating to a wafer exposure machine with an external variable light intensity attenuation device. It includes a mask stage and an illumination system, with the illumination system positioned above the mask stage. The machine also includes a variable light intensity attenuation device disposed between the mask stage and the illumination system. By externalizing the variable light intensity attenuation device and placing it between the mask stage and the illumination system, this invention not only achieves light intensity attenuation to meet the requirements of exposure processes with different light intensities, but also allows for convenient and quick adjustment of the light intensity attenuation level without the need for attenuation filters within the illumination system, significantly improving the machine's efficiency.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor manufacturing technology, specifically relating to a wafer exposure machine with an external variable light intensity attenuation device. Background Technology

[0002] The light intensity attenuation in wafer exposure machines is generally achieved by adjusting the power of the light source controller. However, the power adjustment range is limited, and sometimes the light intensity cannot meet the process requirements. Therefore, the machine usually comes with a built-in attenuator. Installing the built-in attenuator requires turning off the mercury lamp and allowing it to cool down before turning on the filter system. This process is cumbersome, can conflict with other processes, and affects machine efficiency. Furthermore, each replacement can only adjust a specific attenuation rate filter, and frequent attenuator replacements further reduce machine efficiency. Utility Model Content

[0003] In order to overcome the shortcomings of the existing technology, the purpose of this utility model is to provide a wafer exposure machine with an external variable light intensity attenuation device, which can avoid the cumbersome process of disassembling and assembling the filter system, directly realize the light intensity attenuation function, and improve the efficiency of the machine.

[0004] To achieve the above objectives, the technical solution of this utility model is a wafer exposure machine with an external variable light intensity attenuation device, including a mask stage and an illumination system. The illumination system is disposed above the mask stage, and the machine also includes a variable light intensity attenuation device disposed between the mask stage and the illumination system.

[0005] As one embodiment, the variable light intensity attenuation device includes a base and a disk. The base is disposed on the mask stage, and the disk is rotatably mounted on the base. The disk is provided with a plurality of through holes arranged at intervals along the circumference, and an attenuation plate is installed in each of the through holes.

[0006] As one implementation method, the attenuation rates of the attenuators in the multiple through holes are different.

[0007] As one embodiment, the base is provided with a first light-transmitting hole, which is located directly below the rotation path of the attenuator.

[0008] As one implementation method, the size of the attenuator is larger than the size of the first light-transmitting hole.

[0009] As one embodiment, a second light-transmitting hole is provided on the mask stage, and the second light-transmitting hole is located directly below the first light-transmitting hole.

[0010] As one embodiment, a bearing is also provided on the base, the inner ring of the bearing is connected to one end of a rotating shaft, and the other end of the rotating shaft is connected to the center of the disk.

[0011] As one embodiment, the lighting system includes a light source, a cold light mirror, a filter system, a reflector and a front lens arranged sequentially along the optical path, and the variable light intensity attenuation device is located between the front lens and the mask stage.

[0012] As one embodiment, the lighting system further includes a bowl-shaped mirror, with the larger end of the bowl-shaped mirror facing the cold light mirror, and the light source disposed at the smaller end of the bowl-shaped mirror.

[0013] As one embodiment, the lighting system includes a lamp chamber, an optical tube, and a front lens tube connected in sequence. The light source, the bowl mirror, and the cold light mirror are all disposed in the lamp chamber. The light filtering system and the reflector are disposed in the optical tube, and the front lens is disposed in the front lens tube.

[0014] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0015] This invention, by externalizing the variable light intensity attenuation device and placing it between the mask stage and the lighting system, not only achieves the light intensity attenuation function to meet the exposure process requirements of different light intensities, but also allows for convenient and quick adjustment of the light intensity attenuation level without the need to install attenuation filters in the internal filter system of the lighting system, thus greatly improving the efficiency of the machine. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 A schematic diagram of the structure of a wafer exposure machine with an external variable light intensity attenuation device provided in an embodiment of this utility model;

[0018] Figure 2 A schematic diagram of the structure of the variable light intensity attenuation device provided in the embodiment of this utility model;

[0019] Figure 3 A schematic diagram of the structure of the base provided in this embodiment of the utility model;

[0020] Figure 4 A schematic diagram of the structure of the disk provided in an embodiment of this utility model;

[0021] In the diagram: 1. Illumination system; 11. Light source; 12. Bowl mirror; 13. Cold light mirror; 14. Filtering system; 15. Reflector; 16. Front lens; 2. Variable light intensity attenuation device; 21. Base; 22. Disk; 23. Attenuator; 24. Rotating shaft; 25. First light-transmitting hole; 26. Bearing hole; 3. Mask stage. Detailed Implementation

[0022] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present utility model.

[0023] In the description of this utility model, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0024] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature; in the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0025] like Figure 1 As shown, this embodiment provides a wafer exposure machine with an external variable light intensity attenuation device 2, including a mask stage 3 and an illumination system 1. The illumination system 1 is disposed above the mask stage 3. The machine also includes a variable light intensity attenuation device 2, which is disposed between the mask stage 3 and the illumination system 1. By externalizing the variable light intensity attenuation device 2 and placing it between the mask stage 3 and the illumination system 1, this embodiment not only achieves light intensity attenuation to meet the exposure process requirements of different light intensities, but also allows for convenient and quick adjustment of the light intensity attenuation level. It eliminates the need to install an attenuator 23 in the internal filter system 14 of the illumination system 1, greatly improving the machine's utilization efficiency.

[0026] In some embodiments, the variable light intensity attenuation device 2 includes a base 21 and a disk 22. The base 21 is disposed on the mask stage 3, and the disk 22 is rotatably mounted on the base 21. The disk 22 has a plurality of through holes arranged at intervals along the circumference, and an attenuation plate 23 is installed in each of the through holes. Figures 2-4 As shown, since multiple attenuators 23 are arranged at intervals along the circumference of the disk 22, the disk 22 can be rotated to move the required attenuator 23 into the optical path, thereby achieving the required light intensity attenuation effect and improving the efficiency of replacing the attenuator 23.

[0027] Preferably, the attenuation rates of the attenuators 23 in the multiple through holes are different. By installing multiple attenuators 23 with different attenuation rates in the multiple through holes, the variable light intensity attenuation device 2 integrates attenuators 23 with multiple attenuation rates, which can meet the exposure process requirements of different light intensities in a short time. The number of through holes and attenuators 23 can be designed according to actual needs and the size of the mask stage 3, etc. In one embodiment, four through holes are evenly arranged circumferentially on the disk 22, and attenuators 23 are installed in each of the four through holes, and the attenuation rates of the attenuators 23 in the four through holes are completely different.

[0028] In some embodiments, the base 21 is provided with a first light-transmitting hole 25, which is located directly below the rotation path of the attenuator 23. By placing the first light-transmitting hole 25 directly below the rotation path of the attenuator 23, each attenuator 23 can rotate to be directly above the first light-transmitting hole 25, thereby precisely controlling the light intensity passing through the first light-transmitting hole 25. When one of the attenuators 23 rotates to be directly above the first light-transmitting hole 25, the attenuator 23 has a specific attenuation effect on the light, and the attenuated light shines onto the mask stage 3 through the first light-transmitting hole 25.

[0029] Preferably, the size of the attenuator 23 is larger than the size of the first light-transmitting hole 25. For example... Figure 2 As shown, in this embodiment, the size of the attenuator 23 is larger than the size of the first light-transmitting hole 25. When the attenuator 23 is rotated above the first light-transmitting hole 25, the orthographic projection of the attenuator 23 on the base 21 can completely cover the first light-transmitting hole 25, ensuring that the light passing through the first light-transmitting hole 25 can be precisely controlled by the attenuator 23. In use, the turntable is manually rotated until the orthographic projection of the attenuator 23 with the desired attenuation rate on the base 21 completely covers the first light-transmitting hole 25. At this time, the light passing through the attenuator 23 with the desired attenuation rate can illuminate the mask stage 3 through the first light-transmitting hole 25.

[0030] Furthermore, the mask stage 3 is provided with a second light-transmitting hole, which is located directly below the first light-transmitting hole 25. The second light-transmitting hole is positioned opposite the first light-transmitting hole 25, ensuring that the light after being adjusted by the attenuator 23 can pass through the first light-transmitting hole 25 and the second light-transmitting hole and act on the material to be exposed.

[0031] In some embodiments, a bearing is also provided on the base 21, the inner ring of which is connected to one end of a rotating shaft 24, and the other end of the rotating shaft 24 is connected to the center of the disk 22. For example... Figure 3 As shown, a bearing hole 26 is provided on the base 21. The bearing hole 26 is located near the first light-transmitting hole 25. The bearing is installed in the bearing hole 26. The bearing realizes the relative movement between the inner ring and the outer ring by the rolling of the rolling elements. One end of the rotating shaft 24 is connected to the inner ring of the bearing, and the other end is connected to the center of the disk 22, thereby realizing the rotation of the disk 22 on the base 21.

[0032] In some embodiments, the mask stage 3 is provided with a mounting groove, and the base 21 is installed in the mounting groove, with the shape and size of the base 21 matching the shape and size of the mounting groove. A second light-transmitting hole is formed at the bottom of the mounting groove. Furthermore, the mounting groove is provided with snap fasteners around its perimeter. During use, the base 21 can be installed in the mounting groove, and the base 21 can be fixed in the mounting groove by rotating the snap fasteners, preventing displacement of the variable light intensity attenuation device 2 during the exposure process and thus avoiding impact on the exposure effect.

[0033] In some embodiments, the lighting system 1 includes a light source 11, a cold light mirror 13, a filter system 14, a reflector 15, and a front lens 16 arranged sequentially along the optical path, with the variable light intensity attenuation device 2 located between the front lens 16 and the mask stage 3. Figure 1 As shown, the cold light mirror 13 is positioned below the light source 11, the reflector 15 is arranged parallel to the cold light mirror 13, the filter system 14 is located between the reflector 15 and the cold light mirror 13, the front lens 16 is located below the reflector 15, and the variable light intensity attenuation device 2 is located below the front lens 16. The light beam emitted by the light source 11 first illuminates the cold light mirror 13, and after being reflected and separated by the cold light mirror 13, it enters the filter system 14. After being filtered by the filter system 14, light of a specific wavelength illuminates the reflector 15, is reflected by the reflector 15 into the front lens 16, and is then transmitted to the variable light intensity attenuation device 2.

[0034] Furthermore, the lighting system 1 also includes a bowl-shaped mirror 12, with the wider end of the bowl-shaped mirror 12 facing the cold light mirror 13, and the light source 11 disposed at the narrower end of the bowl-shaped mirror 12. For example... Figure 1As shown, the light-emitting part of the light source 11 is located inside the small opening of the bowl mirror 12. The bowl mirror 12 can focus the light beam emitted by the light source 11 and transmit it to the cold light mirror 13, thereby improving the light energy utilization efficiency and the stability of the light beam transmission of the lighting system 1.

[0035] In some embodiments, the lighting system 1 includes a lamp chamber, an optical tube, and a front lens 16 tube connected in sequence. The light source 11, the bowl mirror 12, and the cold light mirror 13 are all disposed in the lamp chamber. The light filtering system 14 and the reflector 15 are disposed in the optical tube, and the front lens 16 is disposed in the front lens 16 tube. By placing the light source 11, the bowl mirror 12, and the cold light mirror 13 in the lamp chamber, it is convenient to centrally manage and dissipate heat from the light source 11. By placing the light filtering system 14 and the reflector 15 in the optical tube and the front lens 16 in the front lens 16 tube, a relatively stable environment with less external interference can be provided, minimizing the impact of external factors on light path transmission and optical performance.

[0036] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A wafer exposure machine with an external variable light intensity attenuation device, comprising a mask table and an illumination system, the illumination system being arranged above the mask table, characterized in that: It also includes a variable light intensity attenuation device, which is disposed between the mask stage and the lighting system.

2. The wafer stepper as set forth in claim 1, wherein: The variable light intensity attenuation device includes a base and a disk. The base is disposed on the mask stage, and the disk is rotatably mounted on the base. The disk is provided with a plurality of through holes arranged at intervals along the circumference, and an attenuation plate is installed in each of the through holes.

3. The wafer stepper as set forth in claim 2, wherein: The attenuation rates of the attenuators in the multiple through holes are different.

4. The wafer exposure machine as described in claim 2, characterized in that: The base is provided with a first light-transmitting hole, which is located directly below the rotation path of the attenuator.

5. The wafer exposure machine as described in claim 4, characterized in that: The size of the attenuator is larger than the size of the first light-transmitting hole.

6. The wafer exposure machine as described in claim 4, characterized in that: A second light-transmitting hole is provided on the mask stage, and the second light-transmitting hole is located directly below the first light-transmitting hole.

7. The wafer exposure machine as described in claim 2, characterized in that: The base is also provided with a bearing, the inner ring of which is connected to one end of a rotating shaft, and the other end of the rotating shaft is connected to the center of the disk.

8. The wafer exposure machine as described in claim 1, characterized in that: The lighting system includes a light source, a cold light mirror, a filter system, a reflector, and a front lens arranged sequentially along the optical path, and the variable light intensity attenuation device is located between the front lens and the mask stage.

9. The wafer exposure machine as described in claim 8, characterized in that: The lighting system also includes a bowl-shaped mirror, with the larger end of the bowl-shaped mirror facing the cold light mirror, and the light source is located at the smaller end of the bowl-shaped mirror.

10. The wafer exposure machine as described in claim 9, characterized in that: The lighting system includes a lamp chamber, an optical tube, and a front lens tube connected in sequence. The light source, the bowl mirror, and the cold light mirror are all disposed in the lamp chamber. The light filtering system and the reflector are disposed in the optical tube, and the front lens is disposed in the front lens tube.

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