Cleaning apparatus for semiconductor devices

Abstract

This utility model discloses a cleaning device for semiconductor devices, comprising: a reaction chamber connected to a first gas supply system, the first gas supply system being connected to at least a first cavity and a third cavity respectively; the reaction chamber also having a first base for supporting a substrate to be processed; the first cavity for storing a first process gas, the first process gas comprising a mixture of ammonia and hydrogen fluoride; the third cavity for storing a displacement gas, the displacement gas comprising an inactive gas; both the first cavity and the third cavity are gas-tight containers. Using this utility model's cleaning device to clean silicon-based three-dimensional semiconductor devices achieves efficient cleaning while not only improving the Si3N4 / SiO2 selectivity ratio but also preventing device damage.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor device processing technology, and in particular to a cleaning device for semiconductor devices. Background Technology

[0002] With the continuous development of semiconductor technology, three-dimensional (3D) semiconductor devices, such as gate all-around field-effect transistors (GAA-FETs) and 3D DRAM devices, are gradually becoming mainstream. These semiconductor devices are typically silicon-based and silicon-germanium-based. Under atmospheric conditions, Si and Ge on the surface of these devices may naturally oxidize to form SiO2 and GeO2. In some cases, Si3N4 is a residue, either intentionally deposited or unintentionally formed. Before metal thin film deposition, SiO2 and / or Si3N4 need to be removed during a pre-cleaning process. In 3D NAND devices, Si3N4 needs to be selectively removed while retaining the SiO2 material.

[0003] In the prior art, the pre-cleaning process typically includes the following steps: 1) forming silicide on the Si or SiGe surface using heat treatment or remote plasma-assisted chemical reaction; 2) removing the silicide by thermal evaporation to expose a clean Si or SiGe surface.

[0004] However, with the increasing vertical and horizontal aspect ratios of 3D devices, existing pre-cleaning processes are unable to effectively clean these high aspect ratio 3D device structures. The main reasons include: 1) The design of existing pre-cleaning process modules does not allow for gas pressure buildup, resulting in slow turnover of process gases and byproducts. 2) Simply increasing gas flow time cannot effectively eliminate the concentration gradient distribution of gases in high aspect ratio structures, leading to poor cleaning results. Furthermore, during the cleaning process, especially for 3D devices with high aspect ratio structures, in a processing chamber, when the top oxide is removed, exposing the Si and / or SiGe surfaces to the cleaning gas hydrogen fluoride, the Si and / or SiGe surfaces are easily corroded, while residual oxides remain at the bottom, thus causing device damage and reduced yield.

[0005] The statements herein provide only background information relating to this invention and do not necessarily constitute prior art. Utility Model Content

[0006] The present invention aims to solve the problem that existing technologies cannot effectively clean 3D semiconductor devices, and provides a semiconductor device cleaning device that can effectively remove SiO2 and / or Si3N4 during the pre-cleaning process, while avoiding device damage.

[0007] To achieve the above objectives, this utility model provides a cleaning device for semiconductor devices, comprising: a reaction chamber connected to a first gas supply system, the first gas supply system being connected to at least a first cavity and a third cavity respectively; the reaction chamber also having a first base for supporting a substrate to be processed; the first cavity for storing a first process gas, the first process gas comprising a mixture of ammonia and hydrogen fluoride; the third cavity for storing a displacement gas, the displacement gas comprising an inactive gas; both the first cavity and the third cavity are gas-holding containers.

[0008] Optionally, a valve is provided on the downstream pipe of the first cavity to control the pulsed introduction of the first process gas.

[0009] Optionally, a valve is provided on the downstream pipe of the third cavity for controlling the pulsed introduction of replacement gas.

[0010] Optionally, the first base is provided with a first heater for increasing the surface temperature of the substrate to be processed.

[0011] Optionally, a third heater is provided at the top of the reaction chamber, opposite to the first base, to increase the surface temperature of the substrate to be treated.

[0012] Optionally, the first gas supply system is also connected to a second cavity, which is used to store a second process gas, the second process gas including ammonia.

[0013] Optionally, the second cavity is a ventilator.

[0014] Optionally, a valve is provided on the downstream pipe of the second cavity to control the pulsed introduction of the second process gas.

[0015] Optionally, it also includes:

[0016] A vaporization processing chamber is connected to a second gas supply system, which is at least connected to a fourth cavity for storing purge gas, the purge gas containing inactive gas; a second base is provided in the vaporization processing chamber for supporting the substrate to be processed.

[0017] A substrate conveying device conveys a substrate at least between the reaction chamber and the vaporization processing chamber.

[0018] Optionally, the fourth cavity is a ventilator.

[0019] Optionally, a valve is provided on the downstream pipe of the fourth cavity for controlling the pulsed introduction of purge gas.

[0020] Optionally, the second base is provided with a second heater for increasing the surface temperature of the substrate to be processed.

[0021] Compared with the prior art, the technical solution of this utility model has at least the following beneficial effects:

[0022] The first and third chambers connected by the first gas supply system are both gas traps, which allow the process gas to accumulate pressure in the gas traps and release pressure during the dooseing step. This allows the process gas to quickly penetrate into the complex three-dimensional structure, enabling rapid turnover of process gas and by-products, thereby eliminating concentration gradients.

[0023] Furthermore, the second gas supply system includes a gas-holding tank, which pumps inactive gas into the vaporization chamber through pulse control, thereby accelerating the discharge of gaseous silicides formed by evaporation and vaporization, achieving rapid and efficient cleaning.

[0024] Furthermore, this invention features two distinct chambers: a reaction chamber and a vaporization chamber. These chambers are used separately for the conversion into a silicide sacrificial layer and the vaporization evaporation step to clean and remove SiO2 and / or Si3N4 from the device surface. Since there is no need to introduce process gas into the vaporization chamber, it not only selectively removes Si3N4 from the device surface while retaining SiO2, thus improving the Si3N4 / SiO2 selectivity, but also prevents the exposed Si or SiGe surface from being exposed to corrosive HF, avoiding device damage. By configuring different numbers of reaction chambers and vaporization chambers, the processing efficiency of the cleaning equipment can be further improved. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the structure of a semiconductor device cleaning device according to the present invention.

[0026] Figure 2 This is a schematic diagram of the structure of another semiconductor device cleaning device according to the present invention.

[0027] Figure 3 This is a schematic cross-sectional view of a local structure of a substrate w to be processed.

[0028] Attached image labels:

[0029] Reaction chamber 10

[0030] First base 11

[0031] First heater 111

[0032] 12 spray heads

[0033] Third heater 121

[0034] First gas supply system 100

[0035] First cavity 101

[0036] Second cavity 102

[0037] Third cavity 103

[0038] Gasification processing chamber 20

[0039] Second base 21

[0040] Second heater 211

[0041] Second gas supply system 200

[0042] Fourth cavity 204

[0043] substrate transfer device 30

[0044] Valve 40

[0045] Substrate to be processed w

[0046] Longitudinal opening w01

[0047] Lateral opening w02

[0048] Silicon oxide layer w03. Detailed Implementation

[0049] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, provides a further detailed explanation of a semiconductor device cleaning device proposed by this utility model. The advantages and features of this utility model will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of this utility model. Please refer to the drawings to make the objectives, features, and advantages of this utility model more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of this utility model. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this utility model, should still fall within the scope of the technical content disclosed in this utility model.

[0050] The "Si3N4 / SiO2 selectivity ratio" mentioned in this invention refers to the ratio of the processing rates of Si3N4 / SiO2 in the pre-cleaning process of silicon-based semiconductor devices.

[0051] As described in the background section, for three-dimensional semiconductor devices (e.g., 3D Si and SiGe structures), conventional pre-cleaning processes typically employ thermal treatment or remote plasma-assisted process gases to chemically react with silicon oxide (SiO2) or silicon nitride (Si3N4) on the surface of the silicon-based device to form a silicide sacrificial layer. The reaction equation is as follows:

[0052] HF + NH3 → NH4F

[0053] SiO2+NH4F→(NH4)2SiF6+H2O

[0054] Si3N4 + HF → (NH4)2SiF6 + SiF4

[0055] The silicide is then removed by heating and evaporation to expose a clean Si or SiGe surface. The reaction equation is as follows:

[0056] (NH4)2SiF6→SiF4+NH3+HF

[0057] However, with the increasing aspect ratios of 3D devices, existing pre-cleaning processes cannot achieve effective cleaning in high aspect ratio device structures due to factors such as the inability to quickly circulate gas and the inability to effectively eliminate concentration gradients. Furthermore, as mentioned above, the ammonia and hydrogen fluoride generated during silicide evaporation, if not quickly removed, can cause undesirable secondary etching of the substrate.

[0058] To this end, this invention designs a cleaning device for semiconductor devices. Through a gas accumulation and release mechanism, the process gas can be rapidly diffused into a three-dimensional structure with a high aspect ratio, realizing the rapid turnover of process gas and by-products, and effectively removing SiO2 and / or Si3N4 from the surface of silicon-based semiconductor devices.

[0059] like Figure 1As shown, this utility model provides a cleaning device for semiconductor devices, comprising: a reaction chamber 10 connected to a first gas supply system 100, the first gas supply system 100 being connected to at least a first cavity 101 and a third cavity 103 respectively; the reaction chamber 10 also includes a first base 11 for supporting a substrate w to be processed; the first cavity 101 is used to store a first process gas, the first process gas comprising a mixture of ammonia and hydrogen fluoride (HF); the third cavity 103 is used to store a displacement gas, the displacement gas comprising an inactive gas; both the first cavity 101 and the third cavity 103 are gas-tight containers. A valve 40 is provided in the downstream pipe of the first cavity 101 for controlling the pulsed introduction of the first process gas. As an example, the valve 40 can be a solenoid valve. A valve 40 is also provided in the downstream pipe of the third cavity 103 for controlling the pulsed introduction of the displacement gas. The first base 11 is provided with a first heater 111 for increasing the surface temperature of the substrate w to be processed. In some embodiments, a third heater 121 is provided at the top of the reaction chamber 10, opposite to the first base 11, to increase the surface temperature of the substrate w to be treated. As an example, the first air supply system 100 has a spray head 12 located at the top of the reaction chamber 10, opposite to the first base 11. The third heater 121 is located within the spray head 12. During the cleaning process, the first base 11 can be raised to bring the substrate w closer to the spray head 12, and the surface temperature of the substrate w can be increased using the third heater 121.

[0060] In some embodiments, the first gas supply system 100 is also connected to a second cavity 102, which is used to store a second process gas, the second process gas comprising ammonia. In processes where the second process gas is introduced in a constant flow manner, the second cavity 102 can be an atmospheric pressure vessel. In other embodiments, the second cavity 102 is a gas trap. A valve 40 is provided in the downstream pipeline of the second cavity 102 for controlling the pulsed introduction of the second process gas.

[0061] like Figure 2 As shown, this utility model provides another cleaning device for semiconductor devices, comprising: at least one reaction chamber 10, a vaporization treatment chamber 20, and a substrate transfer device 30.

[0062] The reaction chamber 10 is connected to a first gas supply system 100, which is connected to at least a first cavity 101, a second cavity 102, and a third cavity 103.

[0063] The first cavity 101 is a gas-tight container used to store the first process gas. A valve 40 is installed in the downstream pipeline of the first cavity 101. The first process gas contains a mixture of ammonia and hydrogen fluoride (HF). In some embodiments, the first process gas may also contain an inert gas, such as argon, as a carrier gas. Ammonia and HF are pre-mixed and pressurized in the first cavity 101, at least partially reacting to form ammonium fluoride, and then released into the reaction chamber 10 by pumping. During the release process, due to the sufficient pressure accumulated in the first cavity and the large pressure difference with the gas pressure in the reaction chamber, the first process gas has a certain kinetic energy and can penetrate into the deep structure of complex three-dimensional devices, accelerating the lateral diffusion of the gas.

[0064] The second cavity 102 can be an atmospheric pressure container or a pressure-locking tank for storing the second process gas. The second process gas contains ammonia, which can be continuously introduced into the reaction chamber 10 during operation without pressure-locking. In some embodiments, the second process gas may also contain an inert gas, such as argon, as a carrier gas. In other embodiments, a pressure-locking tank is used in the second cavity 102 to accelerate the lateral diffusion of ammonia in the three-dimensional device. The pressure of the second process gas (ammonia) in the pressure-locking tank, followed by its release into the reaction chamber 10, can accelerate the lateral diffusion and adsorption of ammonia into the depths of the three-dimensional device. In some embodiments, a valve 40 is also provided on the pipe connecting the second cavity 102 and the reaction chamber 10 for controlling the pulsed introduction of the second process gas. In some embodiments, the second process gas in the second cavity 102 is used to fine-tune the ratio of ammonia to hydrogen fluoride introduced into the reaction chamber according to process requirements. In other embodiments, the second process gas within the second cavity 102 is used to provide an ammonia pre-soak environment, thereby increasing the rate of subsequent formation of the silicide sacrificial layer.

[0065] The third cavity 103 is a gas-holding tank used to store the replacement gas. As an example, the replacement gas is an inert gas, such as argon (Ar) or nitrogen, which have a relatively large molecular weight. In the gas-holding tank, the replacement gas accumulates to generate pressure before being released into the reaction chamber 10. This gas has a large molecular weight and high kinetic energy, allowing it to quickly reach deep into high aspect ratio three-dimensional devices and rapidly purge any remaining previously introduced process gas from the three-dimensional structure. In some embodiments, a valve 40 is also provided on the pipe connecting the third cavity 103 and the reaction chamber 10 to control the pulsed introduction of the replacement gas.

[0066] The reaction chamber 10 is further provided with a first base 11 for supporting the substrate w to be treated. In the reaction chamber 10, the natural oxide layer or nitride layer on the surface of the substrate w is transformed into a sacrificial layer that is easily evaporated or vaporized under the action of the first process gas. In some embodiments, to accelerate the reaction, the first base 11 is further provided with a first heater 111 to increase the surface temperature of the substrate w to be treated.

[0067] The vaporization chamber 20 is connected to a second gas supply system 200, which is at least connected to a fourth cavity 204. The fourth cavity 204 can be an atmospheric pressure container or a gas-holding tank, used to store purge gas. For example, the purge gas is an inert gas, such as argon (Ar) or nitrogen, which can be selected to assist in the discharge of evaporation or vaporization products. The vaporization chamber 20 also includes a second base 21 to support the substrate w to be treated. In some embodiments, the second base 21 is equipped with a second heater 211 to increase the surface temperature of the substrate w. In the vaporization chamber 20, the sacrificial layer (silicide) formed on the surface of the substrate w is heated, vaporized, or evaporated, and then carried out of the vaporization chamber 20 by the inert gas. In some embodiments, the fourth cavity 204 is a gas-holding tank. The inert gas accumulates pressure in the gas-holding tank and is then pumped into the vaporization chamber 20 to assist in the discharge of vaporization products.

[0068] The substrate transfer device 30 can transfer the substrate w between the reaction chamber 10 and the vaporization treatment chamber 20. When the surface oxide layer of the substrate w to be processed is at least partially converted into a sacrificial layer, the substrate w can be transferred from the reaction chamber 10 to the vaporization treatment chamber 20 through the substrate transfer device 30 for heat treatment to remove the silicide sacrificial layer.

[0069] To improve the efficiency of pre-cleaning, the ratio of the number of reaction chambers 10 to gasification chambers 20 can be set according to different process processing times, and can be greater than or equal to 1. For example, if the process processing time of reaction chamber 10 is 10 minutes and the process processing time of gasification chamber 20 is 3 minutes, the number of reaction chambers 10 can be set to 3 times that of gasification chambers 20 to avoid wasting production capacity due to idle gasification chambers 20. In some embodiments, the ratio of the number of reaction chambers 10 to gasification chambers 20 is 2:1 to 5:1.

[0070] This utility model also provides a method for processing semiconductor devices, comprising:

[0071] Step S1: Provide the cleaning equipment for the aforementioned semiconductor device.

[0072] Step S2: The substrate w to be processed is transferred to the first base 11 in the reaction chamber 10. The substrate w to be processed has a three-dimensional structure and the material of the substrate to be processed includes silicon or silicon germanium.

[0073] Step S3, pretreatment step: A second process gas is introduced into the reaction chamber 10, so that the second process gas is adsorbed on the oxide layer or nitride layer on the surface of the substrate w to be treated; wherein, the second process gas contains ammonia.

[0074] Step S4, forming a silicide sacrificial layer: A first process gas is pumped into the reaction chamber 10, and the first process gas reacts with the oxide layer or nitride layer to form a silicide sacrificial layer; wherein, the first process gas contains a mixture of ammonia and HF.

[0075] In some embodiments, steps S3 and S4 can be repeated multiple times, and a displacement gas, such as argon or nitrogen, can be introduced into a third cavity 103 between steps S3 and S4 to quickly purge the previous gas in the three-dimensional structure, so as to uniformly react the silicon oxide and / or silicon nitride on the substrate surface to form a silicide sacrificial layer, similar to atomic layer deposition (ALD).

[0076] Step S5: The substrate w to be processed is transferred from the reaction chamber 10 to the second base 21 in the vaporization processing chamber 20 using the substrate transfer device 30.

[0077] Step S6, vaporization process: Heating causes the silicide sacrificial layer to be converted into gaseous silicide, which is then discharged from the vaporization chamber 20.

[0078] In some embodiments, after the vaporization process, a purging step is also included: pumping an inactive gas into the vaporization chamber 20 through the fourth cavity 204 to assist in the discharge of the gaseous silicide.

[0079] In some embodiments, the processing method further includes: cyclically alternating between the silicide sacrificial layer step and the vaporization step until the cleaning of the substrate w to be processed meets the process requirements. In the heating vaporization process, a purge gas is pulsed through to remove the silicide sacrificial layer layer by layer, achieving an effect similar to atomic layer etching (ALE) and realizing efficient cleaning.

[0080] In some embodiments, the flow rate of the second process gas is greater than the flow rate of the first process gas, so as to keep the second process gas in an excess state at all times.

[0081] The semiconductor device cleaning equipment provided by this utility model is suitable for pre-cleaning of semiconductor devices, especially semiconductor devices with complex three-dimensional structures, such as 3D NAND devices with high aspect ratios. The high aspect ratio can be greater than 5:1, greater than 10:1, or greater than 30:1, and this utility model is not limited thereto. The substrate to be processed can be any one of GAA-FET, 3D DRAM, or 3D NAND devices. As an example, Figure 3 A partial structure of a 3D DRAM device with a plurality of lateral openings is shown, wherein a longitudinal opening w01 has a high aspect ratio, and there are multiple lateral openings w02 of different depths, the surface of the opening structure being covered with a naturally formed silicon oxide layer w03. In some embodiments, the lateral openings w02 have a high aspect ratio.

[0082] The following specific embodiments illustrate the applicable scenarios of the cleaning equipment of this utility model.

[0083] Example 1

[0084] The substrate w to be processed is a three-dimensional silicon-based device, and its partial cross-sectional schematic diagram is shown below. Figure 3 As shown, the surface of the open structure has a silicon oxide layer formed by natural oxidation. Using the cleaning equipment of this invention, thorough cleaning can be achieved while avoiding damage to the device.

[0085] use Figure 1 The cleaning equipment shown has the following components: First chamber 101 is a gas-holding tank where a mixture of ammonia and HF (the first process gas) mixes, builds pressure, and at least partially reacts to form ammonium fluoride. Second chamber 102 is a gas-holding tank for storing the second process gas, ammonia. Third chamber 103 is a gas-holding tank for storing Ar gas. Fourth chamber 204 is an atmospheric pressure vessel for storing Ar gas.

[0086] The substrate w to be treated is placed onto the first base 11 in the reaction chamber 10. Ammonia gas is continuously introduced into the reaction chamber 10 through the second cavity 102, causing the surface of the substrate w to be treated to adsorb the ammonia gas. Then, a first process gas is pumped into the first cavity 101. Under an environment of greatly excess ammonia gas and room temperature, the first process gas reacts with the silicon oxide on the surface of the substrate w to form a silicide sacrificial layer. In some embodiments, before introducing the first process gas, the substrate w is pre-soaked by introducing a second process gas.

[0087] The third heater 121 is turned on, raising the substrate w close to the spray head 12. This causes the substrate w to rapidly heat up to the sublimation temperature of the silicide sacrificial layer, resulting in vaporization. Ar gas is pulsedly pumped into the third cavity 103, which purges and carries the vaporized products out of the reaction chamber, achieving the purpose of cleaning and removing the silicon oxide layer. The silicide sacrificial layer step and the vaporization step are repeated until the silicon oxide layer is removed. In some embodiments, the vaporization reaction process temperature is 100°C-200°C, thereby ensuring the reaction rate while reducing damage to the device layer.

[0088] Since the first cavity 101, the second cavity 102, and the third cavity 103 are all gas-tight containers, process gases can be pumped in with greater kinetic energy, which is beneficial for the lateral diffusion of the process gases. This allows them to quickly penetrate into openings with high aspect ratios, efficiently converting the surface silicon oxide layer into a silicide sacrificial layer using an ALD (Adaptive Radiation Discharge) method. Then, an ALE (Adaptive Radiation Elimination) method is used for conformal cleaning, vaporizing and removing the silicide sacrificial layer layer by layer. This avoids situations where the bottom of the high aspect ratio structure is not vaporized before the top of the substrate's silicon surface is exposed, thus preventing device damage.

[0089] Example 2

[0090] The substrate w to be processed is a three-dimensional memory device with an alternating stacked structure of partially recessed silicon oxide and silicon nitride layers. During the process, it is necessary to selectively clean or remove additional silicon nitride layers without damaging them. The cleaning equipment of this invention thoroughly cleans the device while improving the Si3N4 / SiO2 selectivity and avoiding device damage.

[0091] use Figure 2 The cleaning equipment shown has the following components: First chamber 101 is a gas-holding tank where a mixture of ammonia and HF (the first process gas) mixes, builds pressure, and at least partially reacts to form ammonium fluoride. Second chamber 102 is an atmospheric pressure vessel for storing the second process gas, ammonia. Third chamber 103 is a gas-holding tank for storing Ar gas. Fourth chamber 204 is a gas-holding tank for storing Ar gas.

[0092] The substrate w to be treated is introduced onto the first base 11 in the reaction chamber 10. Ammonia gas is continuously introduced into the reaction chamber 10 through the second cavity 102, causing the surface of the substrate w to be treated to adsorb ammonia gas. Then, a first process gas is pumped into the first cavity 101. Under an environment of excess ammonia gas and a process temperature of 20-40°C, the first process gas reacts with the Si3N4 on the surface of the substrate w to form a silicide sacrificial layer. The first process gas hardly reacts with the SiO2 layer, thus not causing damage to the SiO2 layer and improving the selectivity ratio of Si3N4 / SiO2. In some embodiments, to further improve the selectivity ratio, the NH3:HF ratio ranges from 3:1 to 5:1.

[0093] The substrate w to be processed is transferred from the reaction chamber 10 to the second base 21 in the vaporization chamber 20 via the substrate transfer device 30. The second heater 211 is activated to increase the surface temperature of the substrate w, causing the silicide sacrificial layer on its surface to vaporize. Simultaneously, Ar gas is pulsedly pumped into the vaporization chamber 20 via the fourth cavity 204 controlled by a solenoid valve to assist in the removal of the vaporized silicide, achieving the purpose of selectively removing Si3N4 from the device. Since the first process gas is not introduced into the vaporization chamber 20, and the vaporization chamber 20 does not contain HF, the surface of the silicon-based device exposed after cleaning in an inactive gas environment will not be damaged, and the SiO2 layer will not be damaged by HF. In some embodiments, the process temperature of the vaporization chamber is 100°C-200°C, thereby ensuring the reaction rate while further reducing damage to SiO2.

[0094] In summary, this invention incorporates gas-holding tanks in the first and second gas supply systems. Utilizing a gas accumulation and release mechanism, the gas entering the reaction chamber or vaporization chamber carries a certain kinetic energy, accelerating its penetration into the deep surface of the three-dimensional device and promoting lateral gas diffusion. This facilitates rapid turnover of gas and byproducts, eliminating concentration gradient effects. By introducing ALD (Alternating Layer Deposition), i.e., alternating introduction of the first process gas, replacement gas, and second process gas, this invention can conformally transform silicon oxide or silicon nitride on the substrate surface into a silicide sacrificial layer. Furthermore, the introduction of ALE (Alternating Layer Evaporation) removes the vaporization evaporation products, achieving highly efficient cleaning without damaging the device. Moreover, by separately setting up the reaction chamber and vaporization chamber to perform the silicide formation and vaporization evaporation steps respectively, this invention not only improves the SiO2 / Si3N4 selectivity ratio for highly efficient cleaning but also avoids device damage.

[0095] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0096] In the description of this utility model, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0097] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0098] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0099] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above content. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A cleaning apparatus for a semiconductor device, characterized by comprising: It includes: a reaction chamber connected to a first gas supply system, the first gas supply system being connected to at least a first cavity and a third cavity respectively; the reaction chamber also has a first base for supporting the substrate to be processed; the first cavity is used to store a first process gas, the first process gas including a mixture of ammonia and hydrogen fluoride; the third cavity is used to store a displacement gas, the displacement gas including an inactive gas; both the first cavity and the third cavity are gas-holding tanks.

2. The cleaning equipment for semiconductor devices as described in claim 1, characterized in that, A valve is provided on the downstream pipe of the first cavity to control the pulsed introduction of the first process gas.

3. The cleaning equipment for semiconductor devices as described in claim 1, characterized in that, A valve is provided on the downstream pipe of the third cavity to control the pulsed introduction of replacement gas.

4. The cleaning equipment for semiconductor devices as described in claim 1, characterized in that, The first base is equipped with a first heater for increasing the surface temperature of the substrate to be processed.

5. The cleaning equipment for semiconductor devices as described in claim 1, characterized in that, Inside the reaction chamber, at the top opposite to the first base, a third heater is provided to increase the surface temperature of the substrate to be processed.

6. The cleaning equipment for semiconductor devices as described in claim 1, characterized in that, The first gas supply system is also connected to a second cavity, which is used to store a second process gas, the second process gas including ammonia.

7. The cleaning equipment for semiconductor devices as described in claim 6, characterized in that, The second cavity is a ventilator.

8. The cleaning equipment for semiconductor devices as described in claim 7, characterized in that, A valve is installed on the downstream pipe of the second cavity to control the pulsed introduction of the second process gas.

9. The cleaning equipment for semiconductor devices as described in claim 1, characterized in that, Also includes: A vaporization processing chamber is connected to a second gas supply system, which is at least connected to a fourth cavity for storing purge gas, the purge gas containing inactive gas; a second base is provided in the vaporization processing chamber for supporting the substrate to be processed. A substrate conveying device conveys a substrate at least between the reaction chamber and the vaporization processing chamber.

10. The cleaning apparatus for semiconductor devices as described in claim 9, characterized in that, The fourth cavity is a ventilator.

11. The cleaning apparatus for semiconductor devices as described in claim 10, characterized in that, A valve is provided on the downstream pipe of the fourth cavity to control the pulsed introduction of purging gas.

12. The cleaning equipment for semiconductor devices as described in claim 9, characterized in that, The second base is equipped with a second heater for increasing the surface temperature of the substrate to be processed.

Images