Belt polishing head and wafer polishing apparatus

Abstract

The utility model relates to wafer processing technical field discloses a belt type polishing head and wafer polishing equipment. The belt type polishing head includes support, a plurality of pressure adjusting parts and polishing belt, a plurality of pressure adjusting parts are continuously arranged along the preset direction, and pressure adjusting part is movably arranged in support along the pressure direction, and the polishing belt transmission is arranged in support and is in abutment with pressure adjusting part, and a plurality of pressure adjusting parts can all independently move and drive the polishing belt reciprocating movement along the pressure direction, to adjust the polishing pressure of polishing belt to wafer. The wafer polishing equipment includes the support platform and the belt type polishing head, and the support platform can switch between the polishing position located below the polishing belt and the installation position located on the side of the belt type polishing head along the horizontal direction. The belt type polishing head and wafer polishing equipment can adjust the polishing pressure to wafer, reduce the difficulty of wafer pressure control in the polishing process, help to improve the precision of wafer polishing, ensure the yield of wafer processing.

Description

Technical Field

[0001] This utility model belongs to the field of wafer processing technology, and in particular relates to a belt polishing head and wafer polishing equipment. Background Technology

[0002] Traditional wafer fabrication processes typically employ a process of grinding and polishing before dicing. This involves first thinning the back side of the wafer through polishing until the target thickness is achieved, and then dicing. However, this process is prone to uneven dicing, breakage, and edge chipping during dicing. To address this issue, a DBG (Dicing Before Grinding) process has been proposed. This process first performs a half-dicing of the wafer, and then thins it to the target thickness through back-side polishing, allowing the wafer to naturally separate into individual chips. By using the DBG process, the challenges of thin wafer fabrication are effectively solved, significantly reducing the risk of wafer breakage and edge chipping during polishing, resulting in a substantial improvement in chip yield.

[0003] However, when using the DBG process to polish the back side of a wafer that has already undergone front-side dicing, the wafer has formed an independent chip array structure. Furthermore, the adhesive tape used to hold the wafer is relatively soft and lacks sufficient mechanical support, making it highly susceptible to localized deformation on the back side. This manifests as regional depressions or bulges, resulting in significant height differences. This uneven surface morphology greatly increases the difficulty of parameter control in the grinding and polishing process, directly affecting the thickness uniformity and product yield of the final chip. In addition, existing grinding and polishing equipment generally uses a working principle where the polishing head drives the polishing pad to rotate. However, as the polishing time increases, the polishing pad not only experiences increased wear, but its micropores or grooves are also easily clogged, requiring frequent pad replacements. This not only increases the number of process steps but also severely impacts the overall production efficiency of wafer polishing.

[0004] Therefore, there is an urgent need for a belt polishing head and wafer polishing equipment to solve the above problems. Utility Model Content

[0005] In view of the shortcomings of the existing technology, the purpose of this utility model is to provide a belt polishing head and a wafer polishing equipment that can adjust the polishing pressure on the wafer, reduce the difficulty of controlling the wafer pressure during the polishing process, help improve the precision of wafer polishing, and ensure the yield of wafer processing.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] On the one hand, a belt polishing head is provided, comprising:

[0008] support;

[0009] Multiple pressure regulating components are continuously arranged along a preset direction, and the pressure regulating components are movably mounted on the bracket along the pressure application direction;

[0010] The polishing belt is mounted on the support and abuts against the pressure regulating components. Multiple pressure regulating components can move independently and drive the polishing belt to reciprocate along the pressure direction to adjust the polishing pressure of the polishing belt on the wafer.

[0011] Optionally, the belt polishing head also includes a feeding roller and a receiving roller, both of which are rotatably mounted on the support about their axial direction. One end of the polishing belt is wound around the feeding roller and the other end is wound around the receiving roller. A pressure regulating element is located between the receiving roller and the feeding roller, and the rotation speed of the feeding roller and the receiving roller can be controlled independently.

[0012] Optionally, the belt polishing head also includes several tension rollers, which are rotatably mounted on the support about their axial direction and located between the feed roller and the take-up roller, with the polishing belt wound around the tension rollers.

[0013] Optionally, the belt polishing head also includes multiple drive components mounted on the bracket. Each drive component corresponds to a pressure regulating element, and the output end of the drive component is connected to the corresponding pressure regulating element to drive the corresponding pressure regulating element to move along the pressure application direction.

[0014] Optionally, the drive assembly includes a first air pump, a connecting pipe, and a first jet nozzle. One end of the connecting pipe is connected to the first air pump, and the other end is connected to the first jet nozzle. The first jet nozzle is located on the side of the corresponding pressure regulator away from the polishing belt. The gas generated by the first air pump can move to the first jet nozzle through the connecting pipe and be sprayed onto the corresponding pressure regulator through the first jet nozzle.

[0015] On the other hand, a wafer polishing apparatus is provided, including a base, a support platform, and the aforementioned belt polishing head. The support platform is mounted on the base, and the support platform is used for vacuum adsorption to support the wafer. The support platform is rotatably mounted on the base about the vertical direction, and the support platform can be switched between a polishing position located below the polishing belt of the belt polishing head and an installation position located on one side of the belt polishing head along the horizontal direction. In the installation position, the wafer can be separated from the support platform.

[0016] Optionally, the base is provided with a sliding groove that extends from below the polishing belt to one side of the polishing belt in the horizontal direction, and the support platform is provided with a sliding part that slides in conjunction with the sliding groove.

[0017] Optionally, the sliding part is provided with an elastic limiting member, and both ends of the sliding groove are provided with limiting holes. The elastic limiting member can be selectively engaged into or disengaged from either limiting hole.

[0018] Optionally, the wafer includes an inner circular body and an outer ring body connected together. A circular boss, an annular groove and a connecting ring are provided on the support platform. The annular groove extends circumferentially along the circular boss. The connecting ring is adsorbed in the annular groove. The outer ring body can be bonded to the connecting ring. The inner circular body can be adsorbed to the circular boss.

[0019] Optionally, the wafer polishing equipment also includes a detection element disposed on the base, which is located above the support stage in the polishing position and is configured to detect the amount of polishing on the wafer.

[0020] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0021] This invention provides a belt polishing head and a wafer polishing device. The polishing belt moves relative to the wafer surface, generating friction between the belt and the wafer, which polishes the wafer. During polishing, the belt moves continuously, meaning each part of the belt has short contact time with the wafer, resulting in uniform wear and preventing blockage of surface micropores. This eliminates the need for frequent belt replacements, significantly improving overall wafer polishing efficiency. Moving the pressure regulating component along the pressure application direction alters the polishing pressure applied to the wafer. Specifically, when the pressure regulating component moves closer to the wafer, the pressure increases; when it moves away, the pressure decreases, thus regulating the polishing pressure. Multiple pressure regulating components are arranged along a preset direction, and each component can move independently and drive the polishing belt. This allows the polishing pressure of the polishing belt on the wafer to be adjusted at any point along the preset direction. Furthermore, as the wafer rotates, the polishing belt can adjust the polishing pressure at any position along the wafer's circumference to accommodate deviations in wafer surface flatness. This significantly reduces the difficulty of controlling wafer pressure during polishing, helps improve wafer polishing accuracy, and ensures a high yield rate in wafer processing. The support stage can move the wafer connected to it to the polishing position. At the polishing position, the support stage rotates, causing the wafer to rotate, which in turn drives the polishing belt to polish the wafer. When installed, the wafer can be separated from the support platform, allowing workers to separate the polished wafer from the platform or attach the wafer to be polished onto the platform. Furthermore, because the support platform is located on one side of the belt polishing head along the horizontal direction, the belt polishing head is no longer above the wafer. This not only ensures that the belt polishing head does not interfere with the attachment and separation of the wafer from the support platform, facilitating wafer placement and removal, but also effectively prevents damage to the belt polishing head during wafer handling, thus extending its service life. Attached Figure Description

[0022] Figure 1 This is a front view of the wafer polishing equipment provided by this utility model;

[0023] Figure 2 Side view of the pressure regulating component and polishing belt of the wafer polishing equipment provided by this utility model;

[0024] Figure 3 A first structural schematic diagram of the wafer polishing equipment provided by this utility model;

[0025] Figure 4 A schematic diagram of the second structure of the wafer polishing equipment provided by this utility model;

[0026] Figure 5 for Figure 4 Enlarged view of point A in the middle;

[0027] Figure 6 A schematic diagram of the structure of the support platform for the wafer polishing equipment provided by this utility model.

[0028] in:

[0029] 100. Belt polishing head;

[0030] 1. Support frame; 2. Pressure regulating component; 3. Polishing belt; 41. Feeding roller; 42. Receiving roller; 43. Tensioning roller; 5. Drive assembly; 51. First air nozzle;

[0031] 200. Base;

[0032] 300. Support platform; 301. Connecting ring;

[0033] 400. Inspection items;

[0034] 500, First cleaning item;

[0035] 600. Second cleaning component;

[0036] 700, wafer; 701, inner circumference; 702, outer circumference. Detailed Implementation

[0037] It should be understood that in the description of this utility model, the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", and "outer" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0038] It should be noted that, in the description of this utility model, unless otherwise explicitly specified and limited, the terms "set," "connected," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0039] The technical solution of this utility model will be further described below with reference to the accompanying drawings and specific embodiments.

[0040] Example 1

[0041] like Figures 1 to 6 As shown, this embodiment provides a belt polishing head 100, which can adjust the polishing pressure on the wafer 700, reducing the difficulty of controlling the pressure on the wafer 700 during the polishing process, helping to improve the polishing accuracy of the wafer 700, and ensuring the yield of wafer 700 processing.

[0042] See Figure 1 and Figure 2 The belt polishing head 100 includes a support 1, multiple pressure adjusting components 2, and a polishing belt 3. The multiple pressure adjusting components 2 are aligned along a preset direction. Figure 2 The pressure regulating element 2 is continuously arranged along the X direction (in the middle), and the pressure regulating element 2 is arranged along the pressure application direction (in the X direction). Figure 2 The polishing belt 3 is movably mounted on the support 1 in the Z direction; the polishing belt 3 is driven and mounted on the support 1. The polishing belt 3 abuts against the pressure regulating component 2. Multiple pressure regulating components 2 can move independently and drive the polishing belt 3 to move back and forth in the pressure direction to adjust the polishing pressure of the polishing belt 3 on the wafer 700.

[0043] The belt polishing head 100 provided in this embodiment drives the polishing belt 3 to move relative to the surface of the wafer 700. Friction is generated between the polishing belt 3 and the wafer 700, and the wafer 700 is polished under the action of this friction. During the polishing process, the polishing belt 3 is in continuous motion, meaning that the contact time between each part of the polishing belt 3 and the wafer 700 is short, allowing for uniform wear without clogging of surface micropores. This eliminates the need for frequent replacement of the polishing belt 3, significantly improving the overall production efficiency of wafer 700 polishing. When the pressure regulating component 2 is driven to move along the pressure application direction, it can also drive the polishing belt 3 to move along the pressure application direction, thereby changing the polishing pressure applied to the wafer 700 by the polishing belt 3. When the pressure regulating component 2 moves closer to the wafer 700 along the pressure application direction, the pressure of the polishing belt 3 on the wafer 700 increases; when the pressure regulating component 2 moves away from the wafer 700 along the pressure application direction, the pressure of the polishing belt 3 on the wafer 700 decreases, thus achieving the adjustment of the polishing pressure of the polishing belt 3 on the wafer 700. Multiple pressure regulating components 2 are arranged along a preset direction, and each pressure regulating component 2 can move independently and drive the polishing belt 3, allowing the polishing pressure of the polishing belt 3 on the wafer 700 at any point along the preset direction to be adjusted. Furthermore, as the wafer 700 rotates, the polishing belt 3 can adjust the polishing pressure at any position circumferentially on the wafer 700 to accommodate deviations in the surface flatness of the wafer 700, significantly reducing the difficulty of pressure control during the polishing process, helping to improve the polishing accuracy of the wafer 700, and ensuring the yield rate of wafer 700 processing.

[0044] In this embodiment, see Figure 1 The pressure regulating component 2 includes a pressure roller extending in a preset direction. The pressure roller is rotatably mounted on the support 1 about its axial direction and rolls with the polishing belt 3. This arrangement allows the pressure roller to rotate under the drive of the polishing belt 3 as the polishing belt 3 moves along its extension direction, thereby helping to reduce the friction between the pressure roller and the polishing belt 3 and reduce the influence of the pressure roller on the movement of the polishing belt 3.

[0045] In this embodiment, the preset direction is the width direction of the polishing belt 3; in other embodiments, the preset direction is the radial direction of the wafer 700. That is, the preset direction can be determined according to the specific conditions of the wafer 700 polishing site, as long as it is ensured that any part of the wafer 700 can be polished by the polishing belt 3.

[0046] In this embodiment, the pressure direction is vertical; in other embodiments, the pressure direction is set at an angle to the vertical direction.

[0047] For example, the polishing belt 3 is made of materials such as non-woven fabric, polyurethane or damping cloth.

[0048] In other embodiments, the polishing belt 3 includes multiple friction belts corresponding to multiple pressure adjusting members 2. The pressure adjusting members 2 drive the corresponding friction belts to move back and forth along the pressure direction to improve the accuracy of the polishing pressure of the polishing belt 3 on the wafer 700 at each part along the preset direction, and is further applicable to the case where there is a deviation in the surface flatness of the wafer 700.

[0049] Optionally, see Figure 1 and Figure 3 The belt polishing head 100 also includes a feeding roller 41 and a receiving roller 42. Both the feeding roller 41 and the receiving roller 42 are rotatably mounted on the support 1 about their axial direction. One end of the polishing belt 3 is wound around the feeding roller 41, and the other end is wound around the receiving roller 42. The pressure adjusting component 2 is located between the receiving roller 42 and the feeding roller 41, and the rotation speeds of the feeding roller 41 and the receiving roller 42 can be independently controlled. This arrangement allows the polishing belt 3 to be driven between the feeding roller 41 and the receiving roller 42 during the polishing process, thus polishing the wafer 700. Controlling the rotation speed of the feeding roller 41 and the receiving roller 42 also controls the tension of the polishing belt 3, ensuring that the polishing belt 3 remains taut and presses against the wafer 700 regardless of how the pressure adjusting component 2 moves it, thereby improving the polishing effect of the polishing belt 3 on the wafer 700.

[0050] Specifically, when the diameters of the feeding roller 41 and the receiving roller 42 are the same, the rotation speed of the feeding roller 41 should be controlled to be no greater than the rotation speed of the receiving roller 42 during the polishing process so that the polishing belt 3 can be kept taut; when the diameters of the feeding roller 41 and the receiving roller 42 are different, the rotation speeds of the feeding roller 41 and the receiving roller 42 should be determined according to their diameters.

[0051] In this embodiment, see Figure 1 and Figure 3 The belt polishing head 100 also includes several tension rollers 43, which are rotatably mounted on the support 1 about their axial direction and located between the feed roller 41 and the take-up roller 42. The polishing belt 3 is wound around the tension rollers 43. This arrangement helps to further improve the tension of the polishing belt 3 between the feed roller 41 and the take-up roller 42, thereby improving the polishing effect of the polishing belt 3 on the wafer 700. In addition, the extension direction of the polishing belt 3 at the tension rollers 43 can be changed, thereby reducing the overall space occupied by the polishing belt 3 by arranging the positions of several tension rollers 43, which helps to reduce the overall space occupied by the belt polishing head 100 and improve space utilization. Moreover, the tension rollers 43, located between the feed roller 41 and the take-up roller 42, can provide a support point for the polishing belt 3, disperse the tension of the polishing belt 3, reduce the local stress of the polishing belt 3, prevent the polishing belt 3 from breaking due to stress concentration, and improve the service life of the polishing belt 3.

[0052] See Figure 1 The feeding roller 41 and the receiving roller 42 are symmetrically arranged about the pressure regulating component 2. Multiple tension rollers 43 are provided, and the multiple tension rollers 43 are symmetrically arranged on both sides of the pressure regulating component 2, which helps to ensure the uniformity of the force at the contact point between the polishing belt 3 and the pressure regulating component 2, and ensures the uniformity of the pressure of the polishing belt 3 on the wafer 700.

[0053] Optionally, see Figure 2 The belt polishing head 100 also includes multiple drive components 5 disposed on the support 1. The multiple drive components 5 correspond one-to-one with multiple pressure regulating components 2. The output end of the drive component 5 is connected to the corresponding pressure regulating component 2 and is used to drive the corresponding pressure regulating component 2 to move along the pressure application direction, so as to realize the adjustment of the polishing pressure between the polishing belt 3 and the wafer 700.

[0054] In this embodiment, see Figure 2 and Figure 5 The drive assembly 5 includes a first air pump, a connecting pipe, and a first jet nozzle 51. One end of the connecting pipe is connected to the first air pump, and the other end is connected to the first jet nozzle 51. The first jet nozzle 51 is located on the side of the corresponding pressure regulator 2 opposite to the polishing belt 3. The gas generated by the first air pump can move to the first jet nozzle 51 through the connecting pipe and be sprayed onto the corresponding pressure regulator 2 through the first jet nozzle 51. The gas sprayed from the first jet nozzle 51 has a certain pushing force on the pressure regulator 2, which can push the pressure regulator 2 to move in the pressure application direction. When the amount of gas sprayed from the first jet nozzle 51 increases or the gas velocity increases, the pushing force of the drive assembly 5 on the pressure regulator 2 increases, the pushing effect of the pressure regulator 2 on the polishing belt 3 increases, and the polishing pressure between the polishing belt 3 and the wafer 700 increases. When the amount of gas sprayed from the first jet nozzle 51 decreases or the gas velocity decreases, the pushing force of the drive assembly 5 on the pressure regulator 2 decreases, the pushing effect of the pressure regulator 2 on the polishing belt 3 decreases, and the polishing pressure between the polishing belt 3 and the wafer 700 decreases.

[0055] For example, the first jet nozzle 51 is a high-pressure nozzle.

[0056] In other embodiments, the drive assembly 5 is a hydraulic cylinder, and the piston of the hydraulic cylinder is connected to the pressure regulating component 2.

[0057] Example 2

[0058] like Figures 1 to 6As shown, this embodiment provides a wafer polishing device, including a base 200, a support platform 300, and a belt polishing head 100 as described in Embodiment 1. The support 1 of the belt polishing head 100 is disposed on the base 200. The support platform 300 is used for vacuum adsorption to support the wafer 700. The support platform 300 is rotatably disposed on the base 200 in a vertical direction, and can switch between a polishing position below the polishing belt 3 of the belt polishing head 100 and an installation position on one side of the belt polishing head 100 in a horizontal direction. In the installation position, the wafer 700 can be separated from the support platform 300. The support platform 300 can move the wafer 700 connected to it to the polishing position. In the polishing position, driving the support platform 300 to rotate causes the wafer 700 to rotate, simultaneously driving the polishing belt 3 to drive the polishing belt 3, thus achieving polishing of the wafer 700 by the polishing belt 3. When installed, the wafer 700 can be separated from the support platform 300, allowing the operator to separate the polished wafer 700 from the support platform 300 or attach the wafer 700 to be polished onto the support platform 300. Moreover, since the support platform 300 is located on the horizontal side of the belt polishing head 100 when installed, the belt polishing head 100 is no longer above the wafer 700. This not only ensures that the belt polishing head 100 does not affect the attachment and separation of the wafer 700 from the support platform 300, facilitating the placement and removal of the wafer 700 on the support platform 300, but also effectively prevents damage to the belt polishing head 100 during wafer placement and removal, thus improving the service life of the belt polishing head 100.

[0059] In this embodiment, a rotary drive is provided on the base 200, and the output end of the rotary drive is connected to the support platform 300 to drive the support platform 300 to rotate.

[0060] For example, the rotary drive is a motor.

[0061] Optionally, the base 200 is provided with a sliding groove extending from below the polishing belt 3 to one side of the polishing belt 3 in the horizontal direction, and the support platform 300 is provided with a sliding part that slides in conjunction with the sliding groove. When the sliding part slides along the sliding groove, the support platform 300 can drive the wafer 700 to move along the extension direction of the sliding groove, realizing the movement of the support platform 300 between the polishing position and the mounting position.

[0062] In this embodiment, the sliding part is provided with an elastic limiting member, and both ends of the slide groove are provided with limiting holes. The elastic limiting member can be selectively engaged or disengaged from either limiting hole. When the elastic limiting member is engaged in the limiting hole located below the polishing belt 3, the sliding part will be limited to the current position, so that the support platform 300 can be stably limited to the polishing position; when the elastic limiting member is engaged in the limiting hole located on one side of the polishing belt 3, the sliding part cannot slide in the slide groove, so that the support platform 300 can be stably limited to the installation position; when the elastic limiting member disengages from the limiting hole, the sliding part can slide in the slide groove, so that the support platform 300 can switch between the polishing position and the installation position.

[0063] For example, the elastic limiting member includes an elastic element and a limiting block. One end of the elastic element is connected to the sliding part, and the other end is connected to the limiting block. When the sliding part moves between the two limiting holes, the elastic element is compressed, and the limiting block abuts against the groove wall of the slide. When the sliding part moves to the limiting hole, the constraint effect of the groove wall on the limiting block disappears, and the limiting block will enter the limiting hole under the elastic force of the elastic element.

[0064] In other embodiments, the sliding part adopts a roller, which is rotatably located in a groove and rolls in cooperation with the groove wall, driving the roller to rotate and enabling the support platform 300 to move. A brake is provided on the roller. When the support platform 300 moves to the polishing position or the installation position, the brake can limit the support platform 300 to the current position. Releasing the brake will resume the rotation of the roller, allowing the support platform 300 to switch between the polishing position and the installation position.

[0065] Optionally, see Figure 1 and Figure 6 The wafer 700 includes an inner circular body 701 and an outer ring body 702 connected together. The support platform 300 is provided with a circular boss, an annular groove, and a connecting ring 301. The annular groove extends circumferentially along the circular boss. The connecting ring 301 is adsorbed into the annular groove. The outer ring body 702 can adhere to the connecting ring 301, and the inner circular body 701 can be adsorbed onto the circular boss. When the connecting ring 301 desorbs from the annular groove and the circular boss desorbs from the inner circular body 701, the wafer 700 can separate from the support platform 300, allowing the wafer 700 to be removed from the support platform 300. When the connecting ring 301 is adsorbed into the annular groove and the inner circular body 701 is adsorbed onto the circular boss, the wafer 700 can be stably connected to the support platform 300, ensuring the stability of the wafer 700's position on the support platform 300 during polishing. Furthermore, the arrangement of the annular groove and the circular boss allows the surface of the inner circular body 701 to be higher than the surface of the outer annular body 702 after the wafer 700 is connected to the support platform 300, so that the belt polishing head 100 can polish the wafer 700.

[0066] Specifically, vacuum adsorption components are provided on both the groove wall of the annular groove and the circular boss. The inner circular body 701 is vacuum adsorbed onto the circular boss by the vacuum adsorption components on the circular boss, and the connecting ring 301 is vacuum adsorbed into the annular groove by the vacuum adsorption components inside the annular groove, ensuring the stability of the wafer 700 on the support stage 300. When the vacuum adsorption components are closed, the wafer 700 can be separated from the support stage 300.

[0067] For example, the connecting ring 301 is made of iron, and the outer ring body 702 is bonded to the connecting ring 301 by a blue film.

[0068] Optionally, see Figure 3 and Figure 4 The wafer polishing equipment also includes a detection element 400 set on the base 200. In the polishing position, the detection element 400 is located above the support stage 300 and is configured to detect the polishing amount of the wafer 700 in order to realize real-time monitoring of the polishing amount of the wafer 700 during the polishing process.

[0069] During the polishing process of wafer 700, stress is concentrated at the outer ring 702, which is prone to defects. When polishing, it is preferable to place the detection element 400 above the outer ring 702 of wafer 700, that is, to control the yield of wafer 700 after polishing by detecting the amount of polishing of the outer ring 702.

[0070] In this embodiment, the detection element 400 adopts an edge scanning interferometer, which can accurately measure the surface morphology, roughness, and three-dimensional contour of the wafer 700; in other embodiments, the detection element 400 adopts a laser profilometer, which can acquire the irregular morphology of the surface of the wafer 700, providing an important basis for polishing quality evaluation.

[0071] Optionally, see Figure 3 and Figure 4 The wafer polishing equipment also includes a first cleaning element 500 disposed on the base 200. The first cleaning element 500 is located on one side of the belt polishing head 100 and is configured to spray liquid and blow air onto the wafer 700. During the polishing process, the friction between the wafer 700 and the polishing belt 3 generates a certain amount of heat. Spraying liquid onto the wafer 700 helps to reduce the surface temperature of the wafer 700, preventing deformation or damage to the wafer 700 due to overheating, and ensuring the stability and quality of the polishing process. Moreover, spraying liquid also helps to wash away residues on the surface of the wafer 700, keeping the surface of the wafer 700 clean. Blowing air onto the wafer 700 helps to remove residual moisture on the surface of the wafer 700, preventing moisture from corroding or contaminating the wafer 700 and maintaining the condition of the wafer 700 surface.

[0072] For example, the first cleaning component 500 includes a water tank, a water pipe, a spray nozzle, a second air pump, an air pipe, and a second air nozzle. The water tank is mounted on the base 200, and the spray nozzle is connected to the water tank through the water pipe, so that the liquid in the water tank can be sprayed out from the spray nozzle through the water pipe. The second air pump is mounted on the base 200, and the second air nozzle is connected to the second air pump through the air pipe. When the second air pump is turned on, the gas blown out by the second air pump can be sprayed onto the wafer 700 through the air pipe and the second air nozzle.

[0073] Optionally, see Figure 3 and Figure 4 The wafer polishing equipment also includes a second cleaning component 600 disposed on the base 200. The second cleaning component 600 is located on one side of the support stage 300 and is configured to clean the support stage 300. After the wafer 700 is polished and removed from the support stage 300, the cleaning support stage 300 can remove the polishing fluid and residues remaining on the support stage 300, thereby ensuring the stability of the next wafer 700 to be polished on the support stage 300 and reducing the impact of the support stage 300 on the surface flatness of the wafer 700.

[0074] For example, the second cleaning component 600 uses an oilstone, which can grind the support platform 300 to restore the flatness of the surface of the support platform 300.

[0075] The above description is only a specific embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present utility model fall within the protection and disclosure scope of the present utility model.

Claims

1. A belt polishing head, characterized in that, include: Scaffold (1); Multiple pressure regulating components (2) are continuously arranged along a preset direction, and the pressure regulating components (2) are movably disposed on the bracket (1) along the pressure application direction; The polishing belt (3) is driven to the bracket (1). The polishing belt (3) abuts against the pressure regulating member (2). Multiple pressure regulating members (2) can move independently and drive the polishing belt (3) to move back and forth along the pressure direction to adjust the polishing pressure of the polishing belt (3) on the wafer (700).

2. The belt polishing head according to claim 1, characterized in that, The belt polishing head (100) further includes a feeding roller (41) and a receiving roller (42). The feeding roller (41) and the receiving roller (42) are rotatably mounted on the bracket (1) about their axial direction. One end of the polishing belt (3) is wound around the feeding roller (41) and the other end is wound around the receiving roller (42). The pressure adjusting member (2) is located between the receiving roller (42) and the feeding roller (41), and the rotation speed of the feeding roller (41) and the receiving roller (42) can be controlled independently.

3. The belt polishing head according to claim 2, characterized in that, The belt polishing head (100) also includes a plurality of tension rollers (43), which are rotatably disposed on the bracket (1) about their axial direction and located between the feed roller (41) and the take-up roller (42), and the polishing belt (3) is wound around the tension rollers (43).

4. The belt polishing head according to claim 1, characterized in that, The belt polishing head (100) also includes a plurality of drive components (5) disposed on the bracket (1). The plurality of drive components (5) correspond one-to-one with the plurality of pressure regulating elements (2). The output end of the drive component (5) is connected to the corresponding pressure regulating element (2) to drive the corresponding pressure regulating element (2) to move along the pressure application direction.

5. The belt polishing head according to claim 4, characterized in that, The drive assembly (5) includes a first air pump, a connecting pipe and a first jet nozzle (51). One end of the connecting pipe is connected to the first air pump and the other end is connected to the first jet nozzle (51). The first jet nozzle (51) is located on the side of the corresponding pressure regulator (2) away from the polishing belt (3). The gas generated by the first air pump can move to the first jet nozzle (51) through the connecting pipe and be sprayed onto the corresponding pressure regulator (2) through the first jet nozzle (51).

6. A wafer polishing equipment, characterized in that, The device includes a base (200), a support platform (300), and a belt polishing head (100) as described in any one of claims 1-5. The support (1) of the belt polishing head (100) is disposed on the base (200). The support platform (300) is used for vacuum adsorption to support the wafer (700). The support platform (300) is rotatably disposed on the base (200) about the vertical direction. The support platform (300) can be switched between a polishing position located below the polishing belt (3) of the belt polishing head (100) and an installation position located on one side of the belt polishing head (100) along the horizontal direction. In the installation position, the wafer (700) can be separated from the support platform (300).

7. The wafer polishing equipment according to claim 6, characterized in that, The base (200) is provided with a sliding groove, which extends from below the polishing belt (3) to one side of the polishing belt (3) in the horizontal direction, and the support platform (300) is provided with a sliding part that slides in cooperation with the sliding groove.

8. The wafer polishing equipment according to claim 7, characterized in that, The sliding part is provided with an elastic limiting member, and both ends of the sliding groove are provided with limiting holes. The elastic limiting member can be selectively engaged into or disengaged from either of the limiting holes.

9. The wafer polishing equipment according to claim 6, characterized in that, The wafer (700) includes an inner circular body (701) and an outer ring body (702) connected together. The support platform (300) is provided with a circular boss, an annular groove and a connecting ring (301). The annular groove extends circumferentially along the circular boss. The connecting ring (301) is adsorbed into the annular groove. The outer ring body (702) can be bonded to the connecting ring (301). The inner circular body (701) can be adsorbed onto the circular boss.

10. The wafer polishing equipment according to claim 6, characterized in that, The wafer polishing equipment also includes a detection element (400) disposed on the base (200). At the polishing position, the detection element (400) is located above the support platform (300) and is configured to detect the amount of polishing of the wafer (700).

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