An h-bridge power device based on bcd process

By adopting a centrally symmetrical layout and a gradually wide metal finger design in the H-bridge power device, the problems of uneven current and hot spots in traditional H-bridge power transistors are solved, the switching speed and thermal stability are improved, and the reliability and electrical performance of the device are ensured.

CN224698183UActive Publication Date: 2026-08-28SHANGHAI XINYAN MICROELECTRONICS CO LTD
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Patent Information

Application Number
CN202522157239.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-10-13
Publication Date
2026-08-28
Estimated Expiration
2035-10-13

AI Technical Summary

Technical Problem

The traditional H-bridge power transistor layout affects the integrity of the gate drive signal and switching performance, and poses a hot spot risk. Uneven current distribution also affects the thermal stability and reliability of the device.

Method used

The H-bridge circuit adopts a centrally symmetrical layout, uses parallel VDD and GND metal buses, alternately arranged metal fingers with a gradient width design, and a rounded corner transition structure to ensure balanced resistance paths. It also optimizes current distribution and thermal management through multi-layer metal coverage.

Benefits of technology

It improves the uniformity of current distribution, reduces parasitic resistance and inductance, enhances switching speed and thermal stability, and improves device reliability and electrical matching accuracy.

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Abstract

The application relates to the technical field of H-bridge power devices, and provides an H-bridge power device based on a BCD process, which adopts a central symmetry layout on a semiconductor substrate and comprises parallel VDD and GND metal buses and an output metal port; the VDD and GND metal buses respectively extend a plurality of power metal strips which are parallel to each other and are alternately arranged towards the output port; each power metal strip has a width gradient structure and a round-corner transition edge corner which are continuous from the bus to the port direction; and the power metal strip is connected with an underlying power transistor active area through a contact hole array; the device is configured through specific shape and size, so that the metal path resistances from the VDD and the GND to the output end are equal, thereby realizing uniform distribution of current, reducing parasitic parameters, improving switching speed, and significantly improving the thermal reliability and overall reliability of the device.
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