LIGHT-EMITTING COMPONENTS AND METHOD FOR PRODUCING A LIGHT-EMITTING COMPONENT

Abstract

Light-emitting component (100), comprising: • a first electrode (104); • an organic electroluminescent layer structure (106) on or above the first electrode (104); • a second translucent electrode (112) on or above the organic electroluminescent layer structure (106); • a mirror layer structure (116) on or above the second electrode (112), wherein the mirror layer structure (116) has a lateral thermal conductivity of at least 1 * 10 -3 W / K; • an optically translucent layer structure (114) between the mirror layer structure (116) and the second translucent electrode (112); and • a second optically translucent layer structure (208) on or above the second electrode (112).

Description

[0001] The invention relates to light-emitting components and methods for producing a light-emitting component.

[0002] The following publications concern light-emitting components: US 2005 / 0 285 520 A1, US 2005 / 0 110 396 A1, US 2006 / 0 125 387 A1, US 2010 / 0 187 987 A1 and US 6 396 864 B1.

[0003] Large-area organic light-emitting diodes (OLEDs) typically exhibit significant uneven temperature and luminance distributions. This uneven distribution results in an unsightly luminous image. On the other hand, brightness and temperature peaks cause accelerated aging of individual areas of the OLED's luminous surface. A more uniform temperature distribution can improve the homogeneity of the luminous image and increase the lifespan of the OLED.

[0004] Due to microcavity effects, OLEDs exhibit a color shift in the emitted light across the viewing angle. This is undesirable from a product perspective.

[0005] Currently commercially available OLEDs (for example, the ORBEOS OLEDs from Osram) do not contain any device for compensating lateral temperature gradients. In some cases, the design of a conventional OLED may rely on so-called busbars, which primarily ensure a more even current distribution and, as a side effect, slightly improve the lateral temperature distribution, albeit insufficiently so.

[0006] Furthermore, a component architecture with heat dissipation via radiation is known for an organic light-emitting diode, consisting of a thermal contact layer, a metal plate and a radiation layer (Cok et al., Journal of the SID 13 / 10, 2005 pages 849 ff).

[0007] In order to address the aspect of color angle distortion in an OLED, approaches have been pursued to date such as applying scattering films or foils, optimizing the layer sequence of the OLED and increasing the optical transparency of the ground contact.

[0008] Furthermore, in the case of an organic light-emitting diode, it is known to provide a combination of a semi-transparent cover contact and a mirror applied to the back (also referred to as a remote cavity) in order to reduce the color angle distortion (Proc Int Disp Workshops - Vol 11, "White Multi-Photon Emission OLED without optical interference", pages 1293 to 1296 (2004)).

[0009] A light-emitting component is provided. The light-emitting component comprises a first electrode; an organic electroluminescent layer structure on or above the first electrode; a second electrode on or above the organic electroluminescent layer structure; and a mirror layer structure on or above the second electrode, wherein the mirror layer structure has a lateral thermal conductivity of at least 1 * 10 -3 W / K. In various embodiments, the lateral thermal conductivity of a layer is understood to be the product of the specific thermal conductivity of the layer material and the layer thickness. If the mirror layer structure consists of multiple layers, in various embodiments, the lateral thermal conductivity is the sum of the individual lateral thermal conductivities.

[0010] The light-emitting component further comprises an optically translucent layer structure on or above the second electrode. The mirror layer structure can be arranged on or above the optically translucent layer structure.

[0011] The term "translucent" or "translucent layer" can be understood in various embodiments to mean that a layer is permeable to light, for example to the light generated by the light-emitting component, for example to one or more wavelength ranges, for example to light in a wavelength range of visible light (for example, at least in a sub-range of the wavelength range from 380 nm to 780 nm). For example, the term "translucent layer" in various embodiments is to be understood to mean that essentially the entire amount of light coupled into a structure (for example, a layer) is also coupled out of the structure (for example, layer), wherein a portion of the light may be scattered in the process.

[0012] The term "transparent" or "transparent layer" can be understood in various embodiments to mean that a layer is permeable to light (for example, at least in a partial range of the wavelength range from 380 nm to 780 nm), whereby light coupled into a structure (for example, a layer) is also coupled out of the structure (for example, layer) essentially without scattering or light conversion. Thus, in various embodiments, "transparent" is to be regarded as a special case of "translucent."

[0013] In the event that, for example, a light-emitting monochrome electronic component or one with a limited emission spectrum is to be provided, it is sufficient that the optically translucent layer structure is translucent at least in a partial range of the wavelength range of the desired monochrome light or for the limited emission spectrum.

[0014] In one embodiment, the second electrode can be configured such that the optically translucent layer structure is optically coupled to the organic electroluminescent layer structure.

[0015] In various embodiments, for example, only the respective electrode (for example the first electrode and / or the second electrode, for example the cathode) is provided as a semi-transparent electrode.

[0016] Although the concept of a "remote cavity" is known per se, various embodiments clearly provide a mirror layer structure with a sufficiently high lateral thermal conductivity to improve heat distribution in a light-emitting component, such as an OLED. In various embodiments, the optical function of the translucent layer and mirror layer structure is combined with the advantages of lateral heat distribution in a common layer structure, compared to the prior art.

[0017] A further light-emitting component is provided. The light-emitting component has a mirror layer structure that has a lateral thermal conductivity of at least 1 * 10 -3W / K; an organic electroluminescent layer structure on or above the mirror layer structure; and an electrode on or above the organic electroluminescent layer structure.

[0018] In one embodiment, the mirror layer structure may form a first electrode; and the electrode may form a second electrode.

[0019] In another embodiment, the light-emitting component may further comprise a first electrode arranged on or above the mirror layer structure. The electrode may form a second electrode.

[0020] The light-emitting component further comprises a first optically translucent layer structure between the mirror layer structure and the first electrode.

[0021] The first optically translucent layer structure can contain light-scattering particles.

[0022] In another embodiment, the light-emitting component may further comprise an encapsulation layer structure on or above the second electrode.

[0023] The light-emitting component further comprises a second optically translucent layer structure on or above the second electrode.

[0024] The second optically translucent layer structure can contain light-scattering particles.

[0025] In another embodiment, the mirror layer structure can have a layer thickness of at least 1 µm.

[0026] A method for producing a light-emitting component is provided. The method comprises forming a first electrode; forming an organic electroluminescent layer structure on or above the first electrode; forming a second electrode on or above the organic electroluminescent layer structure; and forming a mirror layer structure on or above the second electrode, wherein the mirror layer structure has a lateral thermal conductivity of at least 1 * 10 -3 W / K.

[0027] The method further comprises forming an optically translucent layer structure on or above the second electrode. The mirror layer structure is formed on or above the optically translucent layer structure.

[0028] A further method for producing a light-emitting component is provided. The method comprises forming a mirror layer structure having a lateral thermal conductivity of at least 1 * 10 -3 W / K; forming an organic electroluminescent layer structure on or above the mirror layer structure; and forming an electrode on or above the organic electroluminescent layer structure.

[0029] In one embodiment, the mirror layer structure may form a first electrode and the electrode may form a second electrode.

[0030] In another embodiment, the method may further comprise forming a first electrode arranged on or above the mirror layer structure. The electrode may form a second electrode.

[0031] The method further comprises forming a first optically translucent layer structure between the mirror layer structure and the first electrode.

[0032] In another embodiment, the first optically translucent layer structure can contain light-scattering particles or the first optically translucent layer structure can be formed by them.

[0033] In another embodiment, the method may further comprise forming an encapsulation layer structure on or above the second electrode.

[0034] The method further comprises forming a second optically translucent layer structure on or above the second electrode.

[0035] In another embodiment, light-scattering particles can be contained or formed in the second optically translucent layer structure.

[0036] In another embodiment, the mirror layer structure can be formed with a layer thickness of at least 1 µm.

[0037] In another embodiment, the light-emitting component can be configured as an organic light-emitting diode or as an organic light-emitting transistor.

[0038] Embodiments of the invention are illustrated in the figures and are explained in more detail below.

[0039] It shows Fig. 1 is a cross-sectional view of a light-emitting device according to various examples; Fig. 2 shows a cross-sectional view of a light-emitting component according to various embodiments; Fig. 3 is a cross-sectional view of a light-emitting device according to various examples; Fig. 4A to 4F show a light-emitting device according to various examples at different times during its manufacture; Fig. 5 is a flowchart illustrating a method for manufacturing a light-emitting component according to various examples; and Fig. 6 is a flowchart illustrating a method for manufacturing a light-emitting device according to various examples.

[0040] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top," "bottom," "front," "back," "fore," "rear," etc., will be used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology is for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention.It is understood that the features of the various exemplary embodiments described herein may be combined with one another unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the scope of the present invention is defined by the appended claims.

[0041] Throughout this description, the terms "connected," "attached," and "coupled" are used to describe both a direct and an indirect connection, a direct or indirect connection, and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals where appropriate.

[0042] In various embodiments, a light-emitting component can be embodied as an organic light-emitting diode (OLED) or as an organic light-emitting transistor. In various embodiments, the light-emitting component can be part of an integrated circuit. Furthermore, a plurality of light-emitting components can be provided, for example, housed in a common housing.

[0043] In various embodiments, a backside mirror is used for (lateral) heat distribution in a light-emitting component, for example an organic light-emitting diode (OLED).

[0044] Fig. 1 shows an organic light-emitting diode 100 as an implementation of a light-emitting device according to various examples.

[0045] The light-emitting component 100 in the form of an organic light-emitting diode 100 may include a substrate 102. The substrate 102 may, for example, serve as a carrier element for electronic elements or layers, for example light-emitting elements. For example, the substrate 102 may include or be formed from glass, quartz, and / or a semiconductor material or any other suitable material. Furthermore, the substrate 102 may include or be formed from a plastic film or a laminate comprising one or more plastic films. The plastic may include or be formed from one or more polyolefins (for example, high- or low-density polyethylene (PE) or polypropylene (PP)). Furthermore, the plastic may include or be formed from polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES), and / or polyethylene naphthalate (PEN).Furthermore, the substrate 102 can comprise, for example, a metal foil, such as an aluminum foil, a stainless steel foil, a copper foil, or a combination or layer stack thereof. The substrate 102 can comprise one or more of the above-mentioned materials. The substrate 102 can be translucent.

[0046] In various embodiments and examples, the organic light-emitting diode can be configured as a so-called top emitter and / or as a so-called bottom emitter. In various embodiments and examples, a top emitter can be understood to mean an organic light-emitting diode in which the light is emitted upwards from the organic light-emitting diode, for example, through the second electrode. In various embodiments and examples, a bottom emitter can be understood to mean an organic light-emitting diode in which the light is emitted downwards from the organic light-emitting diode, for example, through the substrate and the first electrode.

[0047] A first electrode 104 (for example, in the form of a first electrode layer 104) can be applied on or above the substrate 102. The first electrode 104 (hereinafter also referred to as the lower electrode 104) can be formed from or be made of an electrically conductive material, such as a metal or a conductive transparent oxide (TCO) or a layer stack of multiple layers of the same or different metal or metals and / or the same or different TCOs. Transparent conductive oxides are transparent, conductive materials, for example, metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal-oxygen compounds, such as ZnO, SnO2, or In2O3, ternary metal-oxygen compounds, such as AlZnO, Zn2SnO4, CdSnO3, ZnSnO3, MgIn2O4, GaInO3, Zn2In2O5 or In4Sn3O 12or mixtures of different transparent conductive oxides belong to the group of TCOs. Furthermore, TCOs do not necessarily correspond to a stoichiometric composition and can also be p-doped or n-doped.

[0048] In various embodiments and examples, the first electrode 104 may comprise a metal; for example, Ag, Pt, Au, Mg, Al, Ba, In, Ag, Au, Mg, Ca, Sm, or Li, as well as compounds, combinations, or alloys of these materials.

[0049] In various embodiments and examples, the first electrode 104 can be formed from a layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa. One example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

[0050] In various embodiments and examples, the first electrode may comprise one or more of the following materials alternatively or in addition to the above-mentioned materials: networks of metallic nanowires and particles, for example of Ag; networks of carbon nanotubes; graphene particles and layers; networks of semiconducting nanowires.

[0051] Furthermore, these electrodes can comprise conductive polymers or transition metal oxides or conductive transparent oxides.

[0052] If the light-emitting component 100 emits light through the substrate, the first electrode 104 and the substrate 102 can be translucent or transparent. In this case, if the first electrode 104 is formed from a metal, the first electrode 104 can, for example, have a layer thickness of less than or equal to approximately 25 nm, for example, a layer thickness of less than or equal to approximately 20 nm, for example, a layer thickness of less than or equal to approximately 18 nm. Furthermore, the first electrode 104 can, for example, have a layer thickness of greater than or equal to approximately 10 nm, for example, a layer thickness of greater than or equal to approximately 15 nm.In various embodiments and examples, the first electrode 104 may have a layer thickness in a range of approximately 10 nm to approximately 25 nm, for example a layer thickness in a range of approximately 10 nm to approximately 18 nm, for example a layer thickness in a range of approximately 15 nm to approximately 18 nm.

[0053] Furthermore, in the case of a translucent or transparent first electrode 104 and in the case that the first electrode 104 is formed from a conductive transparent oxide (TCO), the first electrode 104 can, for example, have a layer thickness in a range of approximately 50 nm to approximately 500 nm, for example a layer thickness in a range of approximately 75 nm to approximately 250 nm, for example a layer thickness in a range of approximately 100 nm to approximately 150 nm.

[0054] Furthermore, in the case of a translucent or transparent first electrode 104 and in the case that the first electrode 104 is formed from, for example, a network of metallic nanowires, for example of Ag, which may be combined with conductive polymers, a network of carbon nanotubes, which may be combined with conductive polymers, or of graphene layers and composites, the first electrode 104 may, for example, have a layer thickness in a range of approximately 1 nm to approximately 500 nm, for example a layer thickness in a range of approximately 10 nm to approximately 400 nm, for example a layer thickness in a range of approximately 40 nm to approximately 250 nm.

[0055] In the event that the light-emitting component 100 emits light exclusively upwards, the first electrode 104 can also be configured to be opaque or reflective. In this case, the first electrode 104 can, for example, have a layer thickness greater than or equal to approximately 40 nm, for example a layer thickness greater than or equal to approximately 50 nm.

[0056] The first electrode 104 can be designed as an anode, i.e. as a hole-injecting electrode, or as a cathode, i.e. as an electron-injecting electrode.

[0057] The first electrode 104 may have a first electrical terminal to which a first electrical potential (provided by an energy source (not shown) (for example, a current source or a voltage source) can be applied. Alternatively, the first electrical potential can be applied to the substrate 102 and then indirectly supplied to the first electrode 104 via it. The first electrical potential can be, for example, the ground potential or another predetermined reference potential.

[0058] Furthermore, the light-emitting component 100 may have an organic electroluminescent layer structure 106 that is or will be applied on or above the first electrode 104.

[0059] The organic electroluminescent layer structure 106 may contain one or more emitter layers 108, for example with fluorescent and / or phosphorescent emitters, as well as one or more hole conduction layers 110. In various embodiments and examples, electron conduction layers (not shown) may be provided alternatively or additionally.

[0060] Examples of emitter materials that can be used in the light-emitting component 100 according to various embodiments and examples for the emitter layer(s) 108 include organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (e.g. 2- or 2,5-substituted poly-p-phenylenevinylene) as well as metal complexes, for example iridium complexes such as blue phosphorescent FIrPic (bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)-iridium III), green phosphorescent Ir(ppy)3 (tris(2-phenylpyridine)iridium III), red phosphorescent Ru(dtb-bpy)3*2(PF6) (tris[4,4'-di-tert-butyl-(2,2')-bipyridine]ruthenium(III) complex) as well as blue fluorescent DPAVBi (4,4-bis[4-(di-p-tolylamino)styryl]biphenyl), green fluorescent TTPA (9,10-bis[N,N-di-(p-tolyl)-amino]anthracene) and red fluorescent DCM2 (4-dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4H-pyran) as non-polymeric emitters.Such non-polymer emitters can be deposited, for example, by thermal evaporation. Polymer emitters can also be used, which can be deposited, in particular, by wet-chemical processes such as spin coating.

[0061] The emitter materials may be suitably embedded in a matrix material.

[0062] It should be noted that other suitable emitter materials are also contemplated in other embodiments and examples.

[0063] The emitter materials of the emitter layer(s) 108 of the light-emitting component 100 can, for example, be selected such that the light-emitting component 100 emits white light. The emitter layer(s) 108 can comprise a plurality of emitter materials emitting in different colors (for example, blue and yellow or blue, green, and red). Alternatively, the emitter layer(s) 108 can also be constructed from a plurality of sublayers, such as a blue fluorescent emitter layer 108 or a blue phosphorescent emitter layer 108, a green phosphorescent emitter layer 108, and a red phosphorescent emitter layer 108. Mixing the different colors can result in the emission of light with a white color impression.Alternatively, it may also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which converter material at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that a white color impression results from a (not yet white) primary radiation through the combination of primary radiation and secondary radiation.

[0064] The organic electroluminescent layer structure 106 can generally comprise one or more electroluminescent layers. The one or more electroluminescent layers can comprise organic polymers, organic oligomers, organic monomers, organic small non-polymeric molecules ("small molecules"), or a combination of these materials. For example, the organic electroluminescent layer structure 106 can comprise one or more electroluminescent layers embodied as a hole-transport layer 110, enabling effective hole injection into an electroluminescent layer or electroluminescent region, for example in the case of an OLED.Alternatively, in various embodiments and examples, the organic electroluminescent layer structure may comprise one or more functional layers configured as an electron-transport layer, enabling, for example, in the case of an OLED, effective electron injection into an electroluminescent layer or electroluminescent region. Tertiary amines, carbazodes, conductive polyaniline, or polyethylenedioxythiophene, for example, may be used as material for the hole-transport layer 110. In various embodiments and examples, the one or more electroluminescent layers may be configured as an electroluminescent layer.

[0065] In various embodiments and examples, the hole transport layer 110 may be applied, for example deposited, on or above the first electrode 104, and the emitter layer 108 may be applied, for example deposited, on or above the hole transport layer 110.

[0066] In various embodiments and examples, the organic electroluminescent layer structure 106 (i.e., for example, the sum of the thicknesses of hole transport layer(s) 110 and emitter layer(s) 108) can have a layer thickness of at most approximately 1.5 µm, for example, a layer thickness of at most approximately 1.2 µm, for example, a layer thickness of at most approximately 1 µm, for example, a layer thickness of at most approximately 800 nm, for example, a layer thickness of at most approximately 500 nm, for example, a layer thickness of at most approximately 400 nm, for example, a layer thickness of at most approximately 300 nm.In various embodiments and examples, the organic electroluminescent layer structure 106 can, for example, comprise a stack of a plurality of organic light-emitting diodes (OLEDs) arranged directly one above the other, wherein each OLED can, for example, have a layer thickness of a maximum of approximately 1.5 µm, for example a layer thickness of a maximum of approximately 1.2 µm, for example a layer thickness of a maximum of approximately 1 µm, for example a layer thickness of a maximum of approximately 800 nm, for example a layer thickness of a maximum of approximately 500 nm, for example a layer thickness of a maximum of approximately 400 nm, for example a layer thickness of a maximum of approximately 300 nm.In various embodiments and examples, the organic electroluminescent layer structure 106 may, for example, comprise a stack of three or four OLEDs arranged directly one above the other, in which case, for example, the organic electroluminescent layer structure 106 may have a layer thickness of at most approximately 3 µm.

[0067] The light-emitting component 100 may optionally generally comprise further organic functional layers, for example arranged on or above the one or more emitter layers 108, which serve to further improve the functionality and thus the efficiency of the light-emitting component 100.

[0068] A second electrode 112 (for example in the form of a second electrode layer 112) can be applied on or above the organic electroluminescent layer structure 106 or optionally on or above the one or more further organic functional layers.

[0069] In various embodiments and examples, the second electrode 112 may comprise or be formed from the same materials as the first electrode 104, with metals being particularly suitable in various embodiments and examples.

[0070] In various embodiments and examples, the second electrode 112 may, for example, have a layer thickness of less than or equal to approximately 50 nm, for example a layer thickness of less than or equal to approximately 45 nm, for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm, for example a layer thickness of less than or equal to approximately 25 nm, for example a layer thickness of less than or equal to approximately 20 nm, for example a layer thickness of less than or equal to approximately 15 nm, for example a layer thickness of less than or equal to approximately 10 nm.

[0071] The second electrode 112 can generally be formed in a similar manner to the first electrode 104, or different from it. In various embodiments and examples, the second electrode 112 can be formed from one or more of the materials and with the respective layer thickness (depending on whether the second electrode is to be reflective, translucent, or transparent) as described above in connection with the first electrode 104.

[0072] At these layer thicknesses, the additional cavity, which will be explained in more detail below, is optically coupled to the microcavity(ies) formed by the one or more electroluminescent layer structures.

[0073] The second electrode 112 can be designed as an anode, i.e. as a hole-injecting electrode, or as a cathode, i.e. as an electron-injecting electrode.

[0074] The second electrode 112 may have a second electrical terminal to which a second electrical potential (which is different from the first electrical potential) provided by the energy source can be applied. The second electrical potential may, for example, have a value such that the difference from the first electrical potential has a value in a range from approximately 1.5 V to approximately 20 V, for example, a value in a range from approximately 2.5 V to approximately 15 V, for example, a value in a range from approximately 5 V to approximately 10 V.

[0075] An optically translucent layer structure 114 can be provided on or above the second electrode 112. The optically translucent layer structure 114 can optionally comprise additional light-scattering particles.

[0076] The optically translucent layer structure 114 can in principle be formed from any material, for example a dielectric material, for example an organic material which forms, for example, an organic matrix.

[0077] In various embodiments and examples, the optically translucent layer structure 114 is translucent, for example transparent, for radiation at least in a partial range of the wavelength range from 380 nm to 780 nm.

[0078] In various embodiments and examples, a mirror layer structure 116 is applied on or above the optically translucent layer structure 114. The optically translucent layer structure 114 and the mirror layer structure 116 together clearly form a cavity, for example a microcavity, that is optically coupled (i.e., clearly external) to the microcavity of the light-emitting component 100, for example the OLED, for example, with an optically active medium or a plurality of optically active media.

[0079] In various embodiments and examples, the mirror layer structure 116 has a layer thickness of at least 1 µm. Furthermore, the mirror layer structure 116 can have a lateral thermal conductivity of at least 1 * 10 -3 W / K.

[0080] For this purpose, in this exemplary embodiment, the optically translucent layer structure 114 of the "external" cavity is brought into contact with the translucent (transparent or semitransparent) second electrode 112 of the OLED microcavity. The "external" cavity participates only to a limited extent, or not at all, in the current transport through the OLED. In other words, no or only a negligible electrical current flows through the "external" cavity and thus through the optically translucent layer structure 114 and the mirror layer structure 116.

[0081] As already explained above, the "external" cavity, and in particular the optically translucent layer structure 114, can be "filled" with or formed from a suitable organic matrix in various embodiments and examples. The "external" cavity can have two mirrors or mirror layer structures 116, at least one of which is translucent, transparent, or semitransparent.The translucent, transparent, or semi-transparent mirror (or the translucent, transparent, or semi-transparent mirror layer structure) may be identical to the translucent, transparent, or semi-transparent second electrode 112 of the OLED microcavity (these embodiments are illustrated in the figures; however, in alternative embodiments and examples, an additional translucent, transparent, or semi-transparent mirror layer structure may be provided between the second electrode 112 and the optically translucent layer structure 114).

[0082] In various embodiments and examples, low-molecular-weight organic compounds ("small" molecules), which can be applied, for example, by evaporation in a vacuum, such as alpha-NPD or 1-TNATA, can be provided as the material for the organic matrix. In alternative embodiments and examples, the organic matrix can be formed from or consist of polymeric materials that, for example, form an optically transparent polymeric matrix (epoxies, polymethyl methacrylate, PMMA, EVA, polyesters, polyurethanes, or the like), which can be applied by a wet-chemical process (e.g., spin-coating or printing). In addition, these materials can contain additives for adjusting the refractive index.In various embodiments and examples, for example, any organic material can be used for the organic matrix, as can also be used in the organic electroluminescent layer structure 106. Furthermore, in alternative embodiments and examples, the optically translucent layer structure 114 can comprise or be formed from an inorganic semiconductor material, for example SiN, SiO2, GaN, etc., which can be deposited, for example, by means of a low-temperature deposition process (for example, from the gas phase) (i.e., for example, at a temperature of less than or equal to approximately 100°C).In various embodiments and examples, the refractive indices of the OLED functional layers 106, 108, 110 and the optically translucent layer structure 114 can be adapted to one another as far as possible, wherein the optically translucent layer structure 114 can also comprise highly refractive polymers, for example polyimides with a refractive index of up to n = 1.7, or polyurethane with a refractive index of up to n = 1.74.

[0083] In various embodiments and examples, additives can be included in the polymers. A high-refractive-index polymer matrix can thus be clearly achieved by mixing suitable additives into a normal-refractive-index polymer matrix. Suitable additives include, for example, titanium oxide or zirconium oxide nanoparticles or compounds containing titanium oxide or zirconium oxide.

[0084] In various embodiments and examples, an electrically insulating layer, for example SiN, may be applied between the second translucent electrode 112 and the optically translucent layer structure 114, for example with a layer thickness in a range of approximately 30 nm to approximately 1.5 µm, for example with a layer thickness in a range of approximately 200 nm to approximately 1 µm, in order to protect electrically unstable materials, for example during a wet-chemical process.

[0085] In various embodiments and examples, a barrier thin film / thin film encapsulation can optionally be formed.

[0086] In the context of this application, a "barrier thin layer" or "barrier thin film" can be understood, for example, as a layer or layer structure suitable for forming a barrier against chemical contaminants or atmospheric substances, in particular against water (moisture) and oxygen. In other words, the barrier thin layer is designed such that it cannot be penetrated by OLED-damaging substances such as water, oxygen, or solvents, or can only be penetrated to a very small extent. Suitable configurations of the barrier thin film can be found, for example, in patent applications DE 10 2008 031 405 A1 and DE 10 2008 048 472 A1.

[0087] According to one embodiment, the barrier thin film can be formed as a single layer (in other words, as a single layer). According to an alternative embodiment, the barrier thin film can have a plurality of sub-layers formed on top of one another. In other words, according to one embodiment, the barrier thin film can be formed as a layer stack. The barrier thin film or one or more sub-layers of the barrier thin film can be formed, for example, by means of a suitable deposition method, e.g., by means of an atomic layer deposition (ALD) method according to one embodiment, e.g.,a plasma-enhanced atomic layer deposition (PEALD) or a plasma-less atomic layer deposition (PLALD) process, or by means of a chemical vapor deposition (CVD) process according to another embodiment, e.g. a plasma-enhanced chemical vapor deposition (PECVD) or a plasma-less chemical vapor deposition (PLCVD) process, or alternatively by means of other suitable deposition processes.

[0088] Using an atomic layer deposition (ALD) process, very thin layers can be deposited. In particular, layers with thicknesses in the atomic layer range can be deposited.

[0089] According to one embodiment, in a barrier thin film comprising multiple sublayers, all sublayers can be formed using an atomic layer deposition process. A layer sequence comprising only ALD layers can also be referred to as a "nanolaminate."

[0090] According to an alternative embodiment, in a barrier thin film having a plurality of sublayers, one or more sublayers of the barrier thin film can be deposited by means of a deposition method other than an atomic layer deposition method, for example by means of a vapor deposition method.

[0091] According to one embodiment, the barrier thin film may have a layer thickness of approximately 0.1 nm (one atomic layer) to approximately 1000 nm, for example a layer thickness of approximately 10 nm to approximately 100 nm according to one embodiment, for example approximately 40 nm according to one embodiment.

[0092] According to one embodiment in which the barrier thin film comprises multiple sublayers, all sublayers can have the same layer thickness. According to another embodiment, the individual sublayers of the barrier thin film can have different layer thicknesses. In other words, at least one of the sublayers can have a different layer thickness than one or more other sublayers.

[0093] According to one embodiment, the barrier thin film or the individual sublayers of the barrier thin film can be formed as a translucent or transparent layer. In other words, the barrier thin film (or the individual sublayers of the barrier thin film) can consist of a translucent or transparent material (or a combination of materials that is translucent or transparent).

[0094] According to one embodiment, the barrier thin film or (in the case of a layer stack with a plurality of sub-layers) one or more of the sub-layers of the barrier thin film can comprise or consist of one of the following materials: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, and mixtures and alloys thereof.

[0095] In various embodiments and examples, the optically translucent layer structure 114 may have a layer thickness in a range from approximately 10 nm to approximately 200 µm, for example, a layer thickness in a range from approximately 100 nm to approximately 100 µm, for example, a layer thickness in a range from approximately 500 nm to approximately 50 µm, for example, 1 µm to 25 µm.

[0096] In various embodiments and examples, the optically translucent layer structure 114 may further comprise or be formed from an adhesive, wherein the adhesive may optionally also contain additional scattering particles. In various embodiments and examples, the optically translucent layer structure 114 (for example, the layer of adhesive) may have a layer thickness greater than 1 µm, for example, a layer thickness of several µm.

[0097] In various embodiments and examples, an electrically insulating layer, for example SiN, may be applied between the second electrode 112 and the optically translucent layer structure 114, for example with a layer thickness in a range of approximately 300 nm to approximately 1.5 µm, for example with a layer thickness in a range of approximately 500 nm to approximately 1 µm, in order to protect electrically unstable materials, for example during a wet-chemical process.

[0098] A possible advantage of this arrangement, which in various embodiments and examples forms the "external" cavity in the front-end-of-line processes, compared to a cavity applied externally to the finished light-emitting component by means of a back-end-of-line process, can be seen in the strong optical coupling of the optically translucent layer structure 114 to the plasmons in the OLED base contact (for example, the first electrode 104) or in the OLED cover contact (for example, the second electrode 112).

[0099] In various embodiments and examples, the mirror layer structure 116 (or optionally the mirror layer structure that can be provided on or above the second translucent electrode 112 below the optically translucent layer structure 114) can have one or more thin metal films (for example, Ag, Mg, Sm, Ca, as well as multilayers and alloys of these materials) if a high transmissivity is desired. The one or more metal films can (each) have a layer thickness in a range from approximately 10 nm to approximately 70 nm, for example have a layer thickness in a range from approximately 14 nm to approximately 30 nm, for example have a layer thickness in a range from approximately 15 nm to approximately 25 nm.In this case, all materials can be used for the mirror layer structure 116 (or optionally the mirror layer structure that can be provided on or above the second electrode 112 below the optically translucent layer structure 114) as listed above for the second translucent electrode 112. For example, doped metal oxide compounds such as ITO, IZO or AZO can also be provided, which can be deposited using a low-damage deposition technology such as, for example, by means of "facial target sputtering".

[0100] In various embodiments and examples, the mirror layer structure 116 (or optionally the mirror layer structure that may be provided on or above the second translucent electrode 112 below the optically translucent layer structure 114) may be reflective or translucent or transparent or semitransparent, depending on whether the organic light-emitting diode 100 is configured as a top emitter and / or as a bottom emitter. The materials may be selected from the materials listed above for the first electrode. The layer thicknesses may also be selected, depending on the desired configuration of the organic light-emitting diode 100, within the ranges described above for the first electrode.Alternatively or additionally, the mirror layer structure 116 (or optionally the mirror layer structure that may be provided on or above the second translucent electrode 112 below the optically translucent layer structure 114) may comprise one or more dielectric mirrors.

[0101] In this case, all materials can be used for the mirror layer structure 116 (or optionally the mirror layer structure that can be provided on or above the second electrode 112 below the optically translucent layer structure 114) as listed above for the second electrode 112. For example, doped metal oxide compounds such as ITO, IZO or AZO can also be provided, which can be deposited using a low-damage deposition technology such as, for example, by means of "facial target sputtering".

[0102] In various embodiments and examples, the mirror layer structure 116 can have the desired minimum lateral thermal conductivity by appropriately selecting the materials of the mirror layer structure 116 and / or the layer thickness of the individual layers of the mirror layer structure 116 or of the entire mirror layer structure 116.

[0103] For example, the mirror layer structure 116 can comprise a stack of several different metals with the same or different layer thicknesses. For example, the mirror layer structure 116 can comprise a layer of copper with a layer thickness in a range of approximately 10 nm to approximately 70 nm, for example with a layer thickness in a range of approximately 14 nm to approximately 30 nm, for example with a layer thickness in a range of approximately 15 nm to approximately 25 nm, and additionally a layer of aluminum with a layer thickness in a range of approximately 10 nm to approximately 70 nm, for example with a layer thickness in a range of approximately 14 nm to approximately 30 nm, for example with a layer thickness in a range of approximately 15 nm to approximately 25 nm.In various embodiments and examples, the mirror layer structure 116 may include a layer of copper with a layer thickness of approximately 3 µm and additionally a layer of aluminum with a layer thickness of approximately 5 µm. In various embodiments and examples, the mirror layer structure 116 may include a layer of aluminum with a layer thickness of approximately 2 µm and additionally a layer of silver with a layer thickness of approximately 5 µm. In various embodiments and examples, the mirror layer structure 116 may include a layer of copper with a layer thickness of approximately 3 µm and additionally a layer of silver with a layer thickness of approximately 2 µm.

[0104] The mirror layer structure 116 can comprise one or more mirrors. If the mirror layer structure 116 comprises multiple mirrors, the respective mirrors are separated from one another by a respective dielectric layer.

[0105] The one or more metal films of the mirror layer structure 116 may (each) have a layer thickness in a range of approximately 2 nm to approximately 1 mm, for example, have a layer thickness in a range of approximately 200 nm to approximately 100 µm, for example, have a layer thickness in a range of approximately 1 µm to approximately 10 µm.

[0106] Furthermore, the organic light-emitting diode 100 may also have encapsulation layers, which may be applied, for example, as part of a back-end-of-line process, wherein it should be noted that in various embodiments and examples the external cavity is formed as part of the front-end-of-line process.

[0107] Furthermore, a cover layer 118, for example a glass 118, can optionally be applied on or over the mirror layer structure 116.

[0108] In various embodiments and examples, a simplified structure and a front-end-of-line process for a light-emitting component, for example an OLED, are provided with an improved, for example optimized (for example lateral) temperature distribution and an improved viewing angle dependence. In various embodiments and examples, this is achieved, for example, by using a transparent or semi-transparent cover contact (also referred to as a second electrode) and / or optionally a thin-film encapsulation of the light-emitting component, for example the OLED. Furthermore, this can be achieved alternatively or additionally by laminating a backside mirror with high reflectivity and high thermal conductivity using an optically translucent, for example optically transparent, adhesive.Examples of adhesives that can be used include epoxies, polymethyl methacrylate, PMMA, EVA, polyester, polyurethanes, phenol-formaldehyde resin adhesives, silicones, silane-curing polymer adhesives, and polyimide adhesives; these adhesives may also contain additives to adjust the refractive index.

[0109] In various embodiments and examples, the light is emitted through the optically translucent, for example optically transparent, base contact (also referred to as the first electrode) of the light-emitting component, for example the OLED (in this case, the light-emitting component is configured as a “bottom emitter”).

[0110] The rear side mirror, ie generally the mirror layer structure (for example the mirror layer structure 116) can in the simplest case have or consist of a glass plate which has been vapor-deposited with a metal of sufficient layer thickness (for example a layer thickness of at least 1 µm).

[0111] In various embodiments and examples, metals such as Ag, Al or one or more metal alloys that have a combination of high reflectivity and high thermal conductivity may be used.

[0112] In various embodiments and examples, the reflectivity of the mirror layer structure (for example, the backside mirror) can be increased and the corrosion thereof can be suppressed by means of one or more additional dielectric layers in the mirror layer structure.

[0113] Additional layers to improve adhesion or processability may be provided in various embodiments and examples.

[0114] The translucent, for example transparent, cover contact on the light-emitting component, for example the OLED, can consist of or comprise thin metal layers (for example Ag, Cu, Au, Sm, Ca, Ba, Mg, or alloys thereof) or translucent, for example transparent, electrically conductive metal oxides (ITO, AZO, etc.) or a combination of the two (so-called TCO-thin metal-TCO, such as ITO-Ag-ITO).

[0115] The mirror layer structure, together with the adhesive and the translucent, e.g. transparent, cover contact of the OLED, can form a passive (electrically non-operated) external optical cavity.

[0116] By coupling the external optical cavity to the OLED cavity, the color angle distortion of such an OLED can be improved.

[0117] The thermal conductivity of the mirror layer structure compensates for lateral temperature gradients in the light-emitting component, for example in the OLED.

[0118] In various embodiments and examples, light-scattering particles can be embedded in the layer of adhesive (also referred to as adhesive layer), which can lead to a further improvement in the color angle distortion and the outcoupling efficiency. In various embodiments and examples, dielectric scattering particles can be provided as light-scattering particles, for example metal oxides such as silicon oxide (SiO2), zinc oxide (ZnO), zirconium oxide (ZrO2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga2Oa), aluminum oxide, or titanium oxide. Other particles can also be suitable, provided they have a refractive index that is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate, or hollow glass spheres. Furthermore, metallic nanoparticles, for example.Metals such as gold, silver, iron nanoparticles, or the like can be used as light-scattering particles.

[0119] Fig. 2 shows an organic light-emitting diode 200 as an implementation of a light-emitting device according to various embodiments.

[0120] The organic light-emitting diode 200 according to Fig. 2 is in many aspects similar to the organic light-emitting diode 100 according to Fig. 1, which is why only the differences of the organic light-emitting diode 200 according to Fig. 2 to the organic light-emitting diode 100 according to Fig. 1 will be explained in more detail; with regard to the remaining elements of the organic light-emitting diode 200 according to Fig. 2 refers to the above statements regarding the organic light-emitting diode 100 according to Fig. 1.

[0121] In contrast to the organic light-emitting diode 100 according to Fig. 1 are in the organic light-emitting diode 200 according to Fig. 2 the mirror layer structure 202 and the optically translucent layer structure 204 are not formed on or above the second electrode 112, but below the first electrode 104.

[0122] In these embodiments, the energy source is connected to the first electrical terminal of the first electrode 104 and to the second electrical terminal of the second electrode 112.

[0123] The organic light-emitting diode 200 according to Fig. 2 can be or will be designed as a top emitter.

[0124] In various embodiments, the organic light-emitting diode 200 is according to Fig. Figure 2 clearly shows a surface-emitting OLED with a remote cavity approach on the substrate side. Both contacts (i.e., the first electrode 104 and the second electrode 112) are semi-translucent, for example, semi-transparent, in this embodiment.

[0125] Furthermore, in the organic light-emitting diode 200 according to Fig. 2, an encapsulation layer structure 206, for example in the form of a thin-film encapsulation 206, is arranged on or above the second electrode 112. Furthermore, a layer 208 of an adhesive (optionally with additional light-scattering particles), for example a second optically translucent layer structure 208, can be arranged on or above the encapsulation layer structure 206.

[0126] Furthermore, a cover layer 118, for example a glass 118, can optionally be applied on or over the second optically translucent layer structure 208.

[0127] Thus, the substrate-side emitting light-emitting component (for example the substrate-side emitting OLED) in various embodiments is clearly transferred to a surface-side emitting light-emitting component (for example a surface-side emitting OLED), as it or they in Fig. 2 or Fig. 3. The external metal mirror can be arranged below the optically translucent, for example transparent, base contact. In this case, the light exits the OLED, for example, through the optically translucent, for example transparent, cover contact (for example, the second electrode) and is thus designed, for example, as a top emitter.

[0128] The arrangement of the mirror layer structure, for example the metal mirror, can be done in different ways, for example in one of the following ways: 1) Applying a sufficiently thick mirror layer structure, for example a metal layer, and optionally one or more dielectric auxiliary layers to the underside of the substrate. 2) Bonding a mirror layer structure, for example a metal foil, to the underside of the substrate. 3) Evaporation of a sufficiently thick mirror layer structure, for example, a sufficiently thick metal mirror, onto the substrate, application of a thick optically translucent, for example, transparent layer or layer structure, followed by deposition of the optically translucent, for example, transparent, base contact of the light-emitting component, for example, the OLED. The thick optically translucent, for example, transparent layer or layer structure should have the smoothest possible surface. For this reason, various embodiments and examples may provide for the deposition of a thick SiN layer using a CVD process (Chemical Vapor Deposition).This layer may have the additional advantage of having a very high refractive index (e.g., approximately n = 1.8), which further enhances the effect of the external passive cavity.

[0129] In the processes according to 1.) and 2.), the mirror layer structure together with the substrate and the optically translucent, e.g. transparent, ground contact of the OLED forms the external passive cavity.

[0130] In a limiting case where the external passive cavity is extremely thin or even disappears, the thick mirror layer structure, for example the thick metal mirror, can be applied directly to the substrate and simultaneously form the lower contact, ie the first electrode 302 of the light-emitting component 300, for example an OLED 300. Such a light-emitting component 300 is shown in Fig. 3 shown.

[0131] The remaining layer stack of the light-emitting component 300 according to Fig. 3 is equal to the layer stack of the light-emitting component 200 according to Fig. 2.

[0132] Fig. 4A to Fig. 4F show the light-emitting component 100 according to various examples at different times during its manufacture. The other light-emitting components 200, 300 can be manufactured in a corresponding manner.

[0133] Fig. 4A shows the light-emitting component 100 at a first time 400 during its manufacture.

[0134] At this point in time, the first electrode 104 is applied to the substrate 102, for example deposited, for example by means of a CVD process (chemical vapor deposition) or by means of a PVD process (physical vapor deposition, for example sputtering, ion-assisted deposition or thermal evaporation), alternatively by means of a plating process; a dip deposition process; a spin coating process; printing; doctor blade coating; or spraying.

[0135] In various embodiments and examples, a plasma-enhanced chemical vapor deposition (PE-CVD) process can be used as the CVD process. A plasma can be generated in a volume above and / or around the element to which the layer to be applied is to be deposited, with at least two gaseous starting compounds being supplied to the volume, which are ionized in the plasma and stimulated to react with one another. By generating the plasma, it may be possible to lower the temperature to which the surface of the element must be heated in order to enable the production of, for example, the dielectric layer, compared to a plasma-free CVD process.This can be advantageous, for example, if the element, for example the light-emitting electronic component to be formed, would be damaged at a temperature above a maximum temperature. For example, the maximum temperature for a light-emitting electronic component to be formed according to various embodiments and examples can be approximately 120°C, so that the temperature at which, for example, the dielectric layer is applied can be less than or equal to 120°C and, for example, less than or equal to 80°C.

[0136] Fig. 4B shows the light-emitting device 100 at a second time 402 during its manufacture.

[0137] At this point in time, the one or more hole-conducting layers 110 are applied, for example deposited, onto the first electrode 104, for example by means of a CVD process (chemical vapor deposition) or by means of a PVD process (physical vapor deposition, for example sputtering, ion-assisted deposition or thermal evaporation), alternatively by means of a plating process; a dip deposition process; a spin-coating process; printing; doctor blade coating; or spraying.

[0138] Fig. 4C shows the light-emitting device 100 at a third time 404 during its manufacture.

[0139] At this point in time, the one or more emitter layers 108 are applied, for example deposited, onto the one or more hole-conducting layers 110, for example by means of a CVD process (chemical vapor deposition) or by means of a PVD process (physical vapor deposition, for example sputtering, ion-assisted deposition or thermal evaporation), alternatively by means of a plating process; a dip deposition process; a spin-coating process; printing; doctor blade coating; or spraying.

[0140] Fig. 4D shows the light-emitting device 100 at a fourth time 406 during its manufacture.

[0141] At this point in time, the second electrode 112 is applied, for example deposited, onto the one or more further organic functional layers (if present) or onto the one or more emitter layers 108, for example by means of a CVD process (chemical vapor deposition) or by means of a PVD process (physical vapor deposition, for example sputtering, ion-assisted deposition or thermal evaporation), alternatively by means of a plating process; a dip deposition process; a spin coating process; printing; doctor blade coating; or spraying.

[0142] Fig. 4E shows the light-emitting device 100 at a fifth time 408 during its manufacture.

[0143] At this point in time, the optically translucent layer structure 114 is applied to the second electrode 112, for example by means of a CVD process (chemical vapor deposition) or by means of a PVD process (physical vapor deposition, for example sputtering, ion-assisted deposition or thermal evaporation), alternatively by means of a plating process; a dip deposition process; a spin coating process; printing; doctor blade coating; or spraying.

[0144] Fig. 4F shows the light-emitting device 100 at a sixth time 410 during its manufacture.

[0145] At this point in time, the mirror layer structure 116 with the lateral thermal conductivity described above is applied to the optically translucent layer structure 114, for example by means of a CVD process (chemical vapor deposition) or by means of a PVD process (physical vapor deposition, for example sputtering, ion-assisted deposition or thermal evaporation), alternatively by means of a plating process; a dip deposition process; a spin coating process; printing; doctor blade coating; or spraying.

[0146] Then, optionally, the cover layer 118 is applied, whereby the light-emitting component 100 according to Fig. 1 is completed.

[0147] Fig. 5 shows a flowchart 500 illustrating a method for manufacturing a light-emitting device according to various examples.

[0148] In various examples, a first electrode is formed in 502, for example, on or above a substrate. Furthermore, in 504, an organic electroluminescent layer structure is formed on or above the first electrode, and in 506, a second translucent electrode is formed on or above the organic electroluminescent layer structure. Furthermore, in 508, a mirror layer structure is formed on or above the second electrode, wherein the mirror layer structure has a lateral thermal conductivity of at least 1 * 10 -3 W / K.

[0149] Fig. 6 shows a flowchart 600 illustrating a method for manufacturing a light-emitting device according to various examples.

[0150] In various examples, a mirror layer structure is formed in 602, which has a lateral thermal conductivity of at least 1 * 10 -3W / K. Furthermore, in 604, an organic electroluminescent layer structure is formed on or above the mirror layer structure. In 606, an electrode can be formed on or above the organic electroluminescent layer structure.

[0151] An advantage of various examples can be seen in the possibility of a simple process that simultaneously improves, for example optimizes, the viewing angle dependence of the emission color as well as the heat distribution within the light-emitting device, for example the OLED.

[0152] By applying the mirror layer structure (which can also be described as a heat distribution layer) (in various examples, for example, the Ag, Al mirror) to the back glass, the heat input into the OLED can be avoided, for example during the direct vapor deposition of a thick aluminum cathode.

[0153] In various examples, the adhesive may comprise or be a lamination adhesive. In various examples, light-scattering particles may be incorporated into the adhesive.

Claims

[1] Light-emitting component (100), comprising: • a first electrode (104); • an organic electroluminescent layer structure (106) on or above the first electrode (104); • a second translucent electrode (112) on or above the organic electroluminescent layer structure (106); • a mirror layer structure (116) on or above the second electrode (112), wherein the mirror layer structure (116) has a lateral thermal conductivity of at least 1 * 10 -3 W / K; • an optically translucent layer structure (114) between the mirror layer structure (116) and the second translucent electrode (112); and • a second optically translucent layer structure (208) on or above the second electrode (112). [2] Light-emitting component (100) according to claim 1, wherein the optically translucent layer structure (114) comprises scattering particles. [3] Light-emitting component (200), comprising: • a mirror layer structure (202) which has a lateral thermal conductivity of at least 1 * 10 -3 W / K; • a first translucent electrode (104); • an organic electroluminescent layer structure (106) on or above the mirror layer structure (202); • a second electrode (112) on or above the organic electroluminescent layer structure (106); • an optically translucent layer structure (204) between the mirror layer structure (202) and the first electrode (104); and • a second optically translucent layer structure (208) on or above the second electrode (112). [4] Light-emitting component (200) according to claim 3, wherein the optically translucent layer structure (204) comprises scattering particles. [5] Light-emitting component (100, 200) according to one of claims 1 to 4, further comprising: an encapsulation layer structure (206) on or above the second electrode (112) and / or below the first electrode (104). [6] Light-emitting component (100, 200) according to one of claims 1 to 5, wherein the second optically translucent layer structure (208) comprises light-scattering particles. [7] Light-emitting component (100, 200) according to one of claims 1 to 6, wherein the mirror layer structure (116, 202) has a layer thickness of at least 1 µm. [8] Method (500) for producing a light-emitting component (100), the method comprising: • forming (502) a first electrode (104); • Forming (504) an organic electroluminescent layer structure (106) on or above the first electrode (104); • forming (506) a second translucent electrode (112) on or above the organic electroluminescent layer structure (106); • Forming (508) a mirror layer structure (116) on or above the second electrode (112), wherein the mirror layer structure (116) has a lateral thermal conductivity of at least 1 * 10 -3 W / K • Forming an optically translucent layer structure (114) on or above the second translucent electrode (112); wherein the mirror layer structure (116) is formed on or above the optically translucent layer structure (204); and • Forming a second optically translucent layer structure (208) on or above the second electrode (112). [9] Method (600) for producing a light-emitting component (200), the method comprising: • Forming (602) a mirror layer structure (202) which has a lateral thermal conductivity of at least 1 * 10 -3W / K; • forming a first translucent electrode (104); • forming (604) an organic electroluminescent layer structure (106) on or above the mirror layer structure (202); and • forming (606) a second electrode (112) on or above the organic electroluminescent layer structure (106); • Forming an optically translucent layer structure (204) on or above the mirror layer structure (202); wherein the first electrode (104) is formed on or above the optically translucent layer structure (204); and • Forming a second optically translucent layer structure (208) on or above the second electrode (112).

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