Converter for partial conversion of primary radiation and light-emitting component

Abstract

Converter (10) for partial conversion of a primary radiation (5) with - a basic body (12) containing a luminescence conversion material, and - a plurality of structures (11) on a top surface (10a) of the converter (10), wherein - the structures (11) are formed by elevations of the base body (12) and / or recesses in the base body (12), - the structures (11) are designed to reduce the proportion of primary radiation (5) that exits the converter (10) in a main emission direction (R), - the main emission direction (R) from the converter (10) is the direction that is perpendicular to a main extension plane of the converter (10) and / or to a main extension plane of the base body (12) of the converter (10), - at least a large proportion of the multitude of structures (11) has a base (11b), a top (11a) and at least one side (11c) which connects the base (11b) and the top (11a) and at least partially forms an angle (β) with the principal extension plane of the converter (10), wherein - the base area (11b) has an extent (B) that corresponds to at least 80% of the distance (P) from adjacent structures (11), - the top surface (11a) has an extent (D) that corresponds to at most 30% of the extent (B) of the base surface (11a), and - the angle (β) between the side surface (11c) and the principal extension plane of the converter (10) is between at least 60° and at most 80°.

Description

[0001] A converter for the partial conversion of primary radiation is described. Furthermore, a light-emitting component is described.

[0002] Document DE 10 2013 106 799 A1 describes a converter. Furthermore, converters for the partial conversion of primary radiation and light-emitting components are known from documents US 2015 / 0 014 732 A1, WO 2016 / 021 971 A1 and US 2011 / 0 090 696 A1.

[0003] One task to be solved is to specify a converter that can produce particularly homogeneous mixed light. Another task to be solved is to specify a light-emitting component that emits light with particularly homogeneous light.

[0004] A converter is specified. The converter is designed for the partial conversion of primary radiation. This means that primary radiation entering the converter is partially converted into secondary radiation. The secondary radiation includes wavelengths longer than those of the primary radiation. Therefore, the converter is specifically designed for so-called "down conversion." During operation, the converter emits primary and secondary radiation, which mix to form a mixed radiation in the far field, i.e., at distances from the converter that are large compared to the wavelengths of the emitted light. For example, the far field begins at a distance greater than 10 mm from the converter.

[0005] The converter comprises a base body. The base body contains a luminescence conversion material. The base body can contain or consist of one or more luminescence conversion materials. In particular, the base body can be made of a ceramic or a semiconducting luminescence conversion material. In the case of a semiconducting luminescence conversion material, the converter can be grown epitaxially. Furthermore, the base body can comprise a matrix material, such as a plastic material like silicone or epoxy resin, into which particles of at least one luminescence conversion material are incorporated. The luminescence conversion material can then be, for example, a ceramic luminescence conversion material, an organic luminescence conversion material, a semiconductor material, or a quantum dot converter (QD - quantum dot).

[0006] The converter comprises a multitude of structures on its upper surface. These structures are arranged, for example, on a top surface of the base body. This top surface is, for instance, a primary surface of the base body. This means that the converter's upper surface is not flat and smooth within the manufacturing tolerances; rather, it features a multitude of structures. These structures can be created, for example, by texturing the converter using at least one photographic technique. Furthermore, the structures can be produced by a suitably designed mold, such as one used for injection molding or compression molding. Alternatively, the structures can also be created using dies.

[0007] The structures are formed by protrusions in the base body and / or recesses in the base body. This means that the base body, for example, has a multitude of protrusions on its upper surface, formed by material from the base body. These protrusions can, for example, be bulges in the base body.

[0008] The protrusions on the upper surface of the base body can, for example, border a material that surrounds the converter during operation. This material could be, for instance, air or a potting compound. The converter's upper surface is particularly in contact with a material that has a lower refractive index than the converter itself.

[0009] Alternatively or additionally, the base body may have recesses extending into the base body from the top of the converter. No base body material is present in the area of ​​these recesses. For example, the base body material has been removed in this area. The recesses may be filled with a material surrounding the converter. This surrounding material could be, for example, air or a potting compound. The recesses are then specifically filled with a material that has a lower refractive index than the converter.

[0010] The structures are designed to reduce the proportion of primary radiation exiting the converter in a main emission direction. This means that primary radiation enters the converter, for example, at a bottom surface opposite the top. Some of the primary radiation can pass through the converter without being converted and exit at the top. The main emission direction from the converter is the direction perpendicular to a main extension plane of the converter and / or to a main extension plane of the converter's base body.

[0011] The structures are designed with respect to their shape, size, and / or distribution on the top of the converter such that they reduce the proportion of primary radiation exiting the converter in a main emission direction. In other words, if the structures are not present, or if other structures are present, a greater proportion of primary radiation exits the converter in the main emission direction than if the structures were present.

[0012] The structures are specifically not designed to increase the probability of primary radiation or secondary radiation generated in the converter escaping. Rather, the probability of primary and secondary radiation escaping remains essentially the same; that is, the probability of escape changes by at most + / -10%, and in particular by at most + / - 5%, due to the structures.

[0013] The structures in question are not, in particular, random roughenings of the base body on the top surface of the converter, but preferably structures that are uniformly spaced apart from one another and / or have the same shape within the manufacturing tolerance and / or have the same size within the manufacturing tolerance and / or are arranged at the grid points of a regular grid within the manufacturing tolerance. "Within the manufacturing tolerance" can, in particular, mean that a dimension deviates only slightly from a target value, whereby the deviation is not intentionally set but is due to uncertainties in the manufacturing process.

[0014] According to at least one embodiment, a converter is specified with - a base body containing a luminescence conversion material, and - a multitude of structures on one top side of the converter, wherein - the structures are formed by elevations of the base body and / or recesses in the base body, and - the structures are designed to reduce the proportion of primary radiation exiting the converter in a main radiation direction.

[0015] In particular, the structures are not formed from a material different from the base body, but rather the structures are integrated into the base body or formed from the base body's material. In other words, the converter consists of the structured base body and has no additional layers applied to create the structure.

[0016] The converter described here is based, among other things, on the following consideration: Converters for converting primary radiation, such as blue light, can generate secondary radiation that mixes with the primary radiation to form, for example, white mixed radiation. The problem that arises is that the mixed radiation exhibits a significant color variation depending on the viewing angle. For example, in the main emission direction, at a viewing angle of 0° in the far field, the mixed radiation may have an increased proportion of the primary radiation, such as a higher proportion of blue light. To the side, i.e., at a viewing angle of 90° in the far field, the proportion of secondary radiation, such as yellow light, may then predominate. Overall, a homogeneous emission is not achieved in this way, regardless of the viewing angle.

[0017] The converter described here is based, among other things, on the idea that reducing the proportion of primary radiation exiting the converter in a main emission direction leads to a homogenization of the color impression in the far field, since, for example, the proportion of blue light can be reduced at a viewing angle of 0°.

[0018] According to at least one embodiment of the converter, the structures are designed to prevent a portion of the primary radiation from exiting the converter. This means that less primary radiation exits the converter through the structures than would be the case without them. For example, primary radiation that would otherwise leave the converter in the main emission direction is reflected multiple times by the structures, so that the primary radiation is returned to the converter's base body. There, this primary radiation is then, for example, partially converted into secondary radiation, or the primary radiation exits the converter at its underside, facing away from the top.

[0019] According to at least one embodiment of the converter, the structures are designed to deflect a portion of the primary radiation as it exits the converter perpendicular to the main radiation direction. This means that the structures allow the proportion of primary radiation leaving the converter perpendicular to the main radiation direction to be greater than would be the case without them. In this way, it is possible for the structures to increase the proportion of primary radiation in the far field at viewing angles other than 0°.

[0020] According to at least one embodiment of the converter, adjacent structures are spaced apart. These structures are arranged, for example, within the manufacturing tolerances, at the vertices of a regular grid, such as a rectangular or triangular grid. Each structure has adjacent structures. The spacing between adjacent structures can then be an average distance, by which the actual distance between adjacent structures of the converter varies, for example, by a maximum of + / - 10%, and in particular by a maximum of + / - 5%.

[0021] The distance between adjacent structures is, for example, the distance between the geometric centroids of the structures, measured in a plane parallel to the principal extension plane of the converter and / or the base body. This distance is then, for example, the pitch with which the structures are arranged on the top surface of the converter.

[0022] The distance between the structures is preferably large compared to a wavelength of the primary radiation. For example, the primary radiation has a peak wavelength at which it exhibits a relative or global maximum. The distance is then particularly large compared to this peak wavelength. In particular, it is possible for the distance between adjacent structures to be at least 10 times, in particular at least 20 times or at least 40 times, as large as a wavelength of the primary radiation. If the primary radiation is, for example, blue light, the distance can be in the range between 15 µm and 25 µm, in particular at 20 µm.

[0023] Preferably, the structures are so large that the primary and secondary radiation are reflected and refracted by them according to the laws of geometric optics.

[0024] At least a large proportion of the multitude of structures has a base, a top, and at least one side surface that connects the base and top surfaces and forms an angle with a principal extension plane of the converter and / or the base body. "At least a large proportion of the multitude of structures" here and in the following means that at least 50% of the structures, in particular at least 75% of the structures, preferably all structures, exhibit the desired property within the manufacturing tolerances.

[0025] For at least the majority of the numerous structures, the base area has an extent that corresponds to at least 80% of the distance to adjacent structures. This extent is then, for example, an edge length, particularly the longest edge length of the base areas, or a diameter of the base area. The extent of the base area can also correspond to the distance between adjacent structures. This means that, in this case, the structures on the top surface of the converter are directly adjacent to each other, so that there is no unstructured area of ​​the base body between the structures.

[0026] For the majority of these structures, the top surface has an area that is at most 30% of the area of ​​the base. The area of ​​the top surface can be defined, for example, by an edge length, particularly the longest edge length of the top surface, or by a diameter of the top surface. The area of ​​the top surface is smaller than the area of ​​the base. Specifically, the structures have a base with a larger area than the top surface; that is, if the structures are raised features, these feature taper in the main direction of radiation. If the structures are recesses, they widen in the main direction of radiation.

[0027] For at least a large proportion of the numerous structures, the angle between the side surface and the principal extension plane of the converter and / or the base body is, at least locally, between at least 60° and at most 80°. Preferably, within the manufacturing tolerances, the side surface runs along a plane such that the angle between the side surface and the principal extension plane of the converter and / or the base body is constant along the entire side surface within the manufacturing tolerances and is between at least 60° and at most 80°.

[0028] For at least the majority of the numerous structures, the base has an area that corresponds to at least 80% of the distance to adjacent structures, the top surface has an area that corresponds to at most 30% of the base's area, and the angle between the side surface and the converter's main plane of extension is between at least 60° and at most 80°. The top surface has a smaller area than the base. With such structures, in particular, it is possible to reduce the proportion of primary radiation exiting the converter in a main emission direction.

[0029] According to at least one embodiment of the converter, at least a large proportion of the multitude of structures are formed by one of the following geometric bodies: truncated pyramid, truncated cone, inverse truncated pyramid, inverse truncated cone. In other words, the structures can be approximated by one of the aforementioned geometric bodies within the manufacturing tolerances. The geometric bodies can also have arbitrary bases. That is, for example, the base of the truncated pyramid can be an n-gon with n > 2. Furthermore, the structures can be arranged rotated relative to each other in a top view of the converter. That is, the structures do not have to be uniformly arranged with the same orientation.

[0030] Furthermore, a light-emitting component is specified. This light-emitting component can, for example, be a light-emitting diode. In particular, the light-emitting component can include a converter described herein; that is, all features disclosed for the converter are also disclosed for the light-emitting component and vice versa.

[0031] The light-emitting component comprises a radiation-emitting semiconductor chip that emits primary radiation during operation. This radiation-emitting semiconductor chip could be, for example, a light-emitting diode (LED) chip or a laser diode chip. Specifically, the radiation-emitting semiconductor chip could be a so-called surface emitter, which emits a large portion of the primary radiation through a surface on the top side of the semiconductor chip. Alternatively, the radiation-emitting semiconductor chip could be a so-called bulk emitter, in which a reflective material is applied to its side surfaces, causing a large portion of the primary radiation to be emitted through a surface on the top side of the semiconductor chip.

[0032] The light-emitting component includes a converter described here, which converts part of the primary radiation into secondary radiation.

[0033] The converter is located on the top side of the semiconductor chip. This means, for example, that the converter is directly attached to the top side of the semiconductor chip. Alternatively, the converter can be attached to the top side of the semiconductor chip using a bonding agent, such as an adhesive. During operation of the semiconductor chip, the primary radiation enters the converter on the top side of the chip. The converter's underside, facing away from the top side, is oriented towards the semiconductor chip, so that the primary radiation enters from the underside of the converter. Light exiting the light-emitting device then preferably occurs mainly on the top side of the converter facing away from the semiconductor chip.

[0034] The component emits mixed radiation from primary and secondary sources during operation. This means that, at least in the far field, the primary and secondary radiation mix to form mixed radiation. Due to the converter described here, the color homogeneity of this mixed radiation is improved, i.e., more homogeneous, depending on the viewing angle, compared to light-emitting components without such a converter.

[0035] According to at least one embodiment of the light-emitting component, a light-emitting component is specified as follows: - a radiation-emitting semiconductor chip that emits primary radiation during operation, and - a converter that converts part of the primary radiation into secondary radiation, wherein - the converter is located on one side of the semiconductor chip, and - mixed radiation from primary and secondary radiation is emitted during operation.

[0036] According to at least one embodiment of the light-emitting component, the mixed radiation is white light. For example, the mixed radiation can be warm white or cool white light.

[0037] In the light-emitting component described here, the converter is specifically structured on its upper surface, such that the emission of primary radiation in the main emission direction is slightly reduced. The proportion of primary radiation in the main emission direction can be controlled in particular by two effects that can be generated by the converter described here.

[0038] Firstly, reflection of the primary radiation at side surfaces of the structures as well as at the top surface of the structure can lead to the primary radiation being deflected back into the converter.

[0039] On the other hand, reflection of primary radiation at a side surface of the structure, as well as Fresnel reflection at a side surface of the structure and refraction of primary radiation exiting at the side surface of the structure, can lead to increased lateral emission, perpendicular to the main emission direction. This results in a light-emitting component in which the color homogeneity of the mixed radiation is increased with respect to the viewing angle in the far field. In this way, the mixed light in the main emission direction, for example, no longer appears bluish but white, and the mixed light at large viewing angles, for example, no longer appears yellowish but white.

[0040] According to at least one embodiment of the light-emitting component, the component comprises an enclosure that laterally surrounds the semiconductor chip and the converter. The enclosure is reflective for both primary and secondary radiation and is in direct contact with the semiconductor chip and the converter in certain areas. The enclosure is, for example, a plastic material such as silicone or epoxy resin filled with radiation-scattering and / or radiation-reflecting particles. For example, the plastic material is filled with titanium dioxide particles. The particles can give the enclosure a white appearance. Primary radiation or secondary radiation striking the enclosure is scattered, for example, by the enclosure.The light is reflected back into the semiconductor chip or the converter, so that ultimately, for example, light only exits from the top of the converter. It is possible that the encapsulation completely covers the side surfaces of the semiconductor chip and the converter and, within the manufacturing tolerances, either sits flush with the top of the converter or extends beyond it laterally.

[0041] The converter and light-emitting component described here will be explained in more detail below using exemplary embodiments and the corresponding figures. Based on the schematic sectional views of the Fig. 1A, Fig. 1B, Fig. 2A, Fig. Section 2B provides a more detailed explanation of exemplary implementations of a converter described here. Based on the Fig. Figure 3 is an embodiment of a light-emitting component described here, which is explained in more detail. Based on the schematic sectional views of the Fig. 4A and Fig. Section 4B explains in more detail how a converter described here works. Based on the graphic representations of the Fig. 5A, Fig. 5B, Fig. Section 5C explains in more detail the effect of a converter described here in a light-emitting component described here.

[0042] Identical, similar, or similarly effective elements in the figures are marked with the same reference symbols. The figures and the relative sizes of the elements depicted within them are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or to improve representation.

[0043] The schematic sectional views of the Fig. 1A and Fig. Figure 1B shows exemplary embodiments of a converter described herein. The converter 10 is designed for the partial conversion of primary radiation 5. The primary radiation is partially converted to secondary radiation 6 within the converter 10. The electromagnetic radiation 5, 6 exits the converter 10 at its top surface in the main emission direction R, which is perpendicular to a main extension plane of the converter 10.

[0044] The converter 10 comprises a base body 12 containing or consisting of a luminescence conversion material. For example, the base body 12 contains luminescence conversion materials, such as particles of a luminescence conversion material, embedded in a matrix that may be silicon-based. Alternatively, the conversion element 10 may be a conversion element consisting of, for example, a ceramic or semiconducting luminescence conversion material.

[0045] The converter comprises a plurality of structures 11 on the top surface 10a of the converter, wherein the structures in the exemplary embodiment of the Fig. 1A are formed by elevations of the base body 12. In the exemplary embodiment of the Fig. 1B the structures are formed by recesses in the base body 12.

[0046] The structures 11 are designed to reduce the proportion of primary radiation 5 that exits the converter 10 in the main emission direction R.

[0047] The structures may, for example, be structures formed within the manufacturing tolerance by one of the following geometric bodies: truncated pyramid, truncated cone, inverse truncated pyramid, inverse truncated cone.

[0048] Structures 11 are present in the converters, as they are in the Fig. 1A and Fig. 1B are shown, uniform in terms of their shape, size and arrangement, i.e. the structures 11 are arranged, for example, at the grid points of a regular grid, they have the same size and shape within the manufacturing tolerance.

[0049] In conjunction with the schematic sectional views of the Fig. 2A and Fig. Section 2B details the preferred dimensions of the structures 11. In the exemplary embodiment of the Fig. In 2A, the structures 11 are formed by truncated pyramids. The structures 11 have a top surface 11a, a base surface 11b, and side surfaces 11c that connect the top surface 11a with the base surface 11b.

[0050] The structures 11 have an extent B on their base surface 11b, which is, for example, the diameter of the base of structure 11. The top surface 11a has an extent D, which is, for example, the diameter of the top surface 11a. The base surface 11b of each structure is larger than the top surface 11a of each structure.

[0051] The side surface 11c runs perpendicular to the principal plane of extension of the converter 10 and forms an angle β with it. The base surface 11b and the top surface 11a run parallel to the principal plane of extension of the converter 10 within the manufacturing tolerance.

[0052] Adjacent structures 11 have a distance P from each other, which is, for example, the distance of the geometric centroid of adjacent structures 11 in a plane parallel to the principal extension plane of the converter 10.

[0053] Preferably, for the converters 10 described here, the structures 11 have the following dimensions: 60°≤β≤80°, 0.8 P≤B≤P, 0 <D≤0,3 B

[0054] For the structures designed as recesses 11, as they are in Fig. The same applies as shown in 2B.

[0055] The distance P between adjacent structures is preferably large compared to the wavelength of the primary radiation 5 and can be, for example, 20 µm.

[0056] In conjunction with the schematic sectional view of the Fig. Figure 3 describes an embodiment of a light-emitting component described herein. The light-emitting component comprises, for example, a carrier 1, which is, for example, a connection carrier designed for the electrical connection of the radiation-emitting semiconductor chip 2 arranged on its upper side.

[0057] The radiation-emitting semiconductor chip 2 is formed, for example, by a surface-emitting light-emitting diode chip. A converter 10, described here, is arranged on a top surface 2a of the semiconductor chip 2. This converter comprises the base body 12 and the structures 11 formed in and / or from the base body 12.

[0058] A connecting element 4 can be arranged between the semiconductor chip 2 and the converter 3 for mechanical and optical connection of the semiconductor chip and the converter 3. For example, the connecting element 4 is an adhesive.

[0059] The casing 3 is arranged laterally around the semiconductor chip 2 and the converter 3; this casing can, for example, be white and reflective.

[0060] In conjunction with the schematic sectional views of the Fig. 4A and Fig. Section 4B explains in more detail the functioning of a converter described here. The functioning is explained using a structure 11, which is formed as a projection from the base body 12.

[0061] The converter 10 described here is characterized by a reduction in the emission of primary radiation 5 in the main emission direction R. This is achieved in two different ways. The operating principle of the converter is explained using the structure 11 formed as elevations, with corresponding effects also being compared, for example, to those found in the Fig. 1B and Fig. 2B explained structures which are formed as recesses in the basic body 12.

[0062] In the Fig. Figure 4A schematically illustrates that primary radiation 5 is reflected at a first side surface 11c of the structure 11, for example, by total internal reflection, and strikes the top surface 11a, where it is again reflected towards a second side surface 11c of the structure 11. From there, the primary radiation 5 is reflected back into the converter 10. This means that primary radiation entering the structure 11 in the main emission direction R is reflected back through multiple reflections. This reduces the proportion of primary radiation exiting the converter 10 in the main emission direction R at the top surface 10a. A portion of the primary radiation 5 may exit laterally at the top surface 11a or the side surface 11c as refracted primary radiation 5 (not shown).

[0063] Such primary radiation 5, which does not penetrate the structure 11 in the direction of the main emission direction R, can, for example, be reflected at a first side surface 11c, see the Fig. 4B. The primary radiation 5 then strikes, for example, a second side surface 11c, where it is partially refracted and coupled out laterally. However, due to the large angle at which the primary radiation strikes the side surface 11c and the high refractive index difference between the converter 10 and its surroundings, a portion of the primary radiation 5 is Fresnel-reflected and then coupled out laterally as reflected primary radiation 5'. Thus, the proportion of primary radiation 5 emitted in the main radiation direction R is reduced, while the proportion of primary radiation emitted perpendicular to the main radiation direction R is increased.

[0064] Based on the graphic representations of the Fig. 5A, Fig. 5B, Fig. Section 5C describes the effect of a converter 10 in a light-emitting device described herein. It is assumed that the converter 10 has an average thickness of 200 µm and that a reflective encapsulation containing titanium dioxide particles forms the encapsulation 3 around the chip 2 and the converter 3. The structure consists of truncated pyramids arranged at a distance P of 20 µm from each other.

[0065] The following curves are shown, labeled with reference numbers 21, 22, 23, 24, 25.

[0066] Curve 21 refers to a measurement in which the structures 11 are formed as elevations. The angle β is chosen to be 72°, the extent B of the base surface 11b is 19 µm, and the extent D of the top surface 11a is 1.9 µm.

[0067] Curve 22 relates to measurements for a converter 10, in which the structures are formed as recesses having an angle β of 70°. B is 17 µm and D is 1.7 µm for the recesses.

[0068] Curves 23, 24, and 25 refer to light-emitting components without a structured converter, which are used for comparison.

[0069] In the graphical representation of the Fig. 5A shows first the intensity I normalized to 1 as a function of the viewing angle α in the far field (“far field angle”).

[0070] It is evident that the emission characteristic, i.e., the intensity as a function of α, is hardly affected by the structuring 11. In particular, in the case of curve 22, which shows measurements for recesses, no difference to conventional light-emitting components is discernible. This means that a converter described here can replace conventional converters without affecting the emission characteristic, thus allowing its use in existing products without, for example, the need to modify downstream optics.

[0071] The Fig. Figure 5B shows the Cx component in the CIE xy color space of a chromaticity measurement of the light emitted by the considered light-emitting components as a function of α, which Fig. 5C shows the Cy component in the CIE xy color space. As can be seen from the plots of the Fig. 5B and Fig.As can be seen in Figure 5C, the variation of the color coordinates as a function of α for light-emitting devices with the converters described here (compare curves 21 and 22) is significantly reduced compared to conventional light-emitting devices with conventional converters. The fluctuation of the Cx component is less than 0.02 and the fluctuation of the Cy component is less than 0.03. Reference symbol list 1 carrier 2 Semiconductor chips 2a Top 3. Wrapping 4 Fasteners 5 Primary radiation 5' reflected primary radiation 6 Secondary radiation 10 converters 10a Top 11 Structure 11a Cover area 11b Base area 11c side surface β angle P distance B. Extension on the base area D Extension on the top surface R Main radiation direction 21 Measurement with surveys 22 Measurement with recess 23 first comparative measurement 24 second comparative measurement 25 third comparative measurement

Claims

Converter (10) for the partial conversion of primary radiation (5) comprising: - a base body (12) containing a luminescence conversion material, and - a plurality of structures (11) on a top surface (10a) of the converter (10), wherein: - the structures (11) are formed by protrusions of the base body (12) and / or recesses in the base body (12), - the structures (11) are configured to reduce the proportion of primary radiation (5) exiting the converter (10) in a principal emission direction (R), - the principal emission direction (R) from the converter (10) is the direction perpendicular to a principal extension plane of the converter (10) and / or to a principal extension plane of the base body (12) of the converter (10), - at least a majority of the plurality of structures (11) comprise a base surface (11b), a top surface (11a), and at least one side surface (11c) exhibitswhich connects the base (11b) and the top surface (11a) and at least partially forms an angle (β) with the principal extension plane of the converter (10), wherein: - the base (11b) has an extent (B) that corresponds to at least 80% of the distance (P) from adjacent structures (11), - the top surface (11a) has an extent (D) that corresponds to at most 30% of the extent (B) of the base (11a), and - the angle (β) between the side surface (11c) and the principal extension plane of the converter (10) is between at least 60° and at most 80°. Converter (10) according to one of the preceding claims, wherein adjacent structures (11) have a distance (P) from each other which is large compared to a wavelength of the primary radiation (5). Converter (10) according to one of the preceding claims, wherein adjacent structures (11) have a distance (P) from each other which is at least 10 times as large as a wavelength of the primary radiation (5). Converter (10) according to one of the preceding claims, wherein at least a large proportion of the plurality of structures (11) is formed by one of the following geometric bodies: truncated pyramid, truncated cone, inverse truncated pyramid, inverse truncated cone. Light-emitting component comprising a radiation-emitting semiconductor chip (2) which emits primary radiation (5) during operation, and a converter (10) according to one of the preceding claims which converts a part of the primary radiation (5) into secondary radiation (6), wherein the converter (10) is arranged on a top surface (2a) of the semiconductor chip (2), and mixed radiation (7) of primary radiation (5) and secondary radiation (6) is emitted during operation. Light-emitting component according to the previous claim, wherein the mixed radiation (7) is white light. Light-emitting component according to one of the two preceding claims with a covering (3) that laterally surrounds the semiconductor chip (2) and the converter (10), wherein the covering (3) is designed to reflect the primary radiation (5) and the secondary radiation (6) and is in direct contact with the semiconductor chip (2) and the converter (10) in certain places. Light-emitting component according to any of the preceding claims 5 to 7, wherein the structures (11) are configured to prevent a portion of the primary radiation (5) from exiting the converter (10). Light-emitting component according to any of the preceding claims 5 to 8, wherein the structures (11) are configured to direct a portion of the primary radiation (5) upon exiting the converter (10) transversely to the main emission direction (R).

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