Radiation-emitting semiconductor body and method for producing a semiconductor layer sequence

Abstract

Radiation-emitting semiconductor body (1) with a semiconductor layer sequence (2) which has an active region (20) provided for generating radiation, an n-conducting semiconductor layer (21) and a p-conducting semiconductor layer (22), wherein - the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer, - the p-type semiconductor layer has a first doping region (221) with a first dopant and a second doping region (222) with a second dopant different from the first dopant, and - the p-conductive semiconductor layer has a further first doping region (225) which is doped with the first dopant and has a thickness of at most 2 nm.

Description

[0001] The present application relates to a radiation-emitting semiconductor body and a method for producing a semiconductor layer sequence.

[0002] Leakage currents can impair the efficiency of radiation-emitting semiconductor components, such as light-emitting diodes in the visible spectral range. One of the main causes of this is that electrons at the junction between the active region intended for generating radiation and the p-type region enter the p-type region due to an insufficient potential barrier, where they recombine non-radiatively. This effect increases with increasing operating temperature.

[0003] By using semiconductor material with a larger band gap than the material of the active region, only a portion of the electrons can be prevented from penetrating the p-type region. Furthermore, with material systems such as AlInGaP, it is often no longer possible to achieve an even higher band gap and thus a sufficiently high potential barrier by adjusting the proportions of group III elements for the p-type region.

[0004] The publications US 2003 / 0 230 750 A1, POHL, J. [et al.]: Combined Mg / Zn p-type doping for AIGalnP laser diodes. In: Journal of Crystal Growth, Vol. 414, 2015, pp. 215-218, US 2007 / 0 045 651 A1 and JP 2004 - 79 644 A describe semiconductor bodies.

[0005] One object is to provide a semiconductor body characterized by high efficiency. Furthermore, a method is to be provided by which a semiconductor layer sequence, in particular for such a semiconductor body, can be produced efficiently and reliably.

[0006] These objects are achieved, among other things, by a radiation-emitting semiconductor body and a method for producing a semiconductor layer sequence according to the independent patent claims. Further embodiments and advantages are the subject of the dependent patent claims.

[0007] A radiation-emitting semiconductor body with a semiconductor layer sequence is specified. The semiconductor layer sequence is deposited epitaxially, for example, using MOCVD.

[0008] The semiconductor layer sequence comprises an active region intended for generating radiation, an n-conducting semiconductor layer, and a p-conducting semiconductor layer. The active region is arranged, in particular, between the n-conducting semiconductor layer and the p-conducting semiconductor layer. The active region, the n-conducting semiconductor layer, and the p-conducting semiconductor layer can each be formed as a single layer or a multilayer. For example, the active region has a quantum structure.

[0009] For the purposes of this application, the term "quantum structure" specifically encompasses any structure in which charge carriers can experience a quantization of their energy states through confinement. In particular, the term "quantum structure" does not specify the dimensionality of the quantization. It thus encompasses, among other things, quantum wells, quantum wires, quantum rods, and quantum dots, and any combination of these structures.

[0010] The p-type semiconductor layer has a first doping region with a first dopant. The thickness of the first doping region, i.e., the extent of the first doping region in a direction extending perpendicular to a main plane of extension of the semiconductor layers of the semiconductor layer sequence, is, for example, small compared to the total thickness of the p-type semiconductor layer. For example, the thickness of the first doping region is at most 5% of the thickness of the p-type semiconductor layer.

[0011] The p-type semiconductor layer has a second doping region with a second dopant that is different from the first dopant. The thickness of the second doping region is, for example, greater than the thickness of the first doping region. For example, the second doping region is at least five times as thick or at least ten times as thick as the first doping region.

[0012] The semiconductor body comprises a semiconductor layer sequence comprising an active region intended for generating radiation, an n-conducting semiconductor layer, and a p-conducting semiconductor layer. The active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer, and the p-conducting semiconductor layer comprises a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant.

[0013] According to at least one embodiment of the radiation-emitting semiconductor body, the first doping region has a thickness of at most 5 nm, for example, of at most 2 nm. For example, the first doping region has a thickness of between one monolayer and five atomic layers. In particular, the first doping region forms a region of the p-conducting semiconductor layer in which the doping is high, for example, at least twice as high, as in a semiconductor material adjacent to at least one side of the first doping region.

[0014] In particular, the semiconductor material adjacent to both sides of the first doping region is free of the first dopant or substantially free of the first dopant. "Substantially free" in this context means, in particular, that the concentration of the first dopant in the adjacent semiconductor material, in particular in the second doping region, is at most 10% of the value in the first doping region.

[0015] According to at least one embodiment of the radiation-emitting semiconductor body, the first dopant and the second dopant each cause p-type doping. The first dopant and the second dopant are thus different in terms of material, but both lead to p-type doping. In other words, both the first dopant and the second dopant act as acceptors.

[0016] The first dopant and the second dopant are, for example, spatially separated from one another in the vertical direction, so that the first doping region contains only the first dopant - apart from a slight diffusion of the second dopant - and the second doping region contains only the second dopant - apart from a slight diffusion of the first dopant.

[0017] According to at least one embodiment of the radiation-emitting semiconductor body, the semiconductor body is based on a III-V compound semiconductor material. In particular, the semiconductor body is based on the compound semiconductor material system Al x In y Ga 1-x-y P z Ace 1-zwith 0<=x<=1, 0<=y<=1, x+y<=1 and 0<=z<=1. This material system is particularly suitable for generating radiation with wavelengths ranging from the red through the yellow to the green spectral range. "Based" in this context means that at least one layer of the semiconductor body, for example all layers of the semiconductor body, has such a material or is made of such a material. This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it can, for example, have one or more dopants as well as additional components. For the sake of simplicity, however, the above formula only includes the essential components of the crystal lattice (Al, Ga, In, As, P), even if these may be partially replaced and / or supplemented by small amounts of other substances.

[0018] According to at least one embodiment of the radiation-emitting semiconductor body, the first dopant is incorporated into group V lattice sites. For example, the first dopant is a group IV element, so that the first dopant acts as an acceptor.

[0019] According to at least one embodiment of the radiation-emitting semiconductor body, the first dopant is carbon. It has been shown that carbon is characterized by very low diffusion in the semiconductor body, so that the first doping region can have a high doping concentration and, at the same time, a small thickness. For example, doping concentrations of 1 × 10 19 cm -3 or more can be achieved. In contrast, with the usual p-dopants magnesium or zinc, concentrations of a maximum of 5 × 10 18 cm -3 reached.

[0020] According to at least one embodiment of the radiation-emitting semiconductor body, the second dopant is incorporated into group III lattice sites. For example, the second dopant is a group II element, such as magnesium or zinc.

[0021] According to at least one embodiment of the radiation-emitting semiconductor body, the first doping region is arranged between the active region and the second doping region. The first doping region can suppress or at least reduce the penetration of electrons into the second doping region during operation of the semiconductor body. For example, the first doping region directly adjoins the active region. In an active region with one or more quantum layers, the first doping region can directly adjoin the nearest quantum layer or be spaced apart from the nearest quantum layer.

[0022] According to at least one embodiment of the radiation-emitting semiconductor body, the first doping region and the second doping region directly adjoin one another. In particular, the first doping region and the second doping region are arranged vertically one above the other.

[0023] For example, the first doping region and the second doping region have essentially the same composition with respect to the group III elements and / or the group V elements. In other words, the first doping region and the second doping region differ essentially in the dopant introduced into the respective region. For example, the percentages of the group III elements, for example Al, Ga, In, in the first doping region differ by a maximum of 5 percentage points from the respective proportions in the second doping region. For the Al content, this means, for example, |x 1-x2| <=0.05, where x1 is the Al content in the first doping region and x2 is the Al content in the second doping region. This applies analogously to the other Group III elements, in particular the In content y.

[0024] According to at least one embodiment of the radiation-emitting semiconductor body, the first doping region forms a charge carrier barrier for electrons. It has been shown that an efficient charge barrier can be achieved by the spatially limited doping concentration in the vertical direction and simultaneously high doping concentration in the first doping region. In particular, in contrast to conventional charge carrier barriers, this charge carrier barrier is not achieved by varying the group III elements of the semiconductor material, but exclusively or at least predominantly due to the comparatively high doping concentration.

[0025] The p-conducting semiconductor layer has a further first doping region doped with the first dopant. The further first doping region can, in particular, have one or more of the features mentioned in connection with the first doping region. For example, the further first doping region has a thickness of at most 2 nm. In the vertical direction, the first doping region and the further first doping region are spaced apart from one another. A distance between the first doping region and the further first doping region is, for example, at most 5 nm. The p-conducting semiconductor layer can also have a plurality of first doping regions.

[0026] Furthermore, a method for producing a semiconductor layer sequence is specified.

[0027] According to one embodiment of the method, a substrate is provided, and a semiconductor layer sequence is grown, comprising an active region intended for generating beams, an n-conducting semiconductor layer, and a p-conducting semiconductor layer. The active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer, and the p-conducting semiconductor layer has a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant.

[0028] In particular, the first dopant is nominally provided only in the first doping region and the second dopant is nominally provided only in the second doping region.

[0029] According to at least one embodiment of the method, the first doping region is deposited at a temperature of at most 600 °C, in particular of at most 580 °C.

[0030] Until now, it was assumed in the literature that efficient p-type doping with carbon could not be achieved. However, it has been shown that the introduction of the first dopant, especially carbon as the first dopant, can be achieved efficiently below this temperature, for example, at 560 °C or 540 °C. In contrast, efficient incorporation of carbon is not achieved at typical growth temperatures, such as 700 °C for AlInGaP.

[0031] For the deposition of the second doping region, the growth temperature can be increased, for example to 700 °C.

[0032] Furthermore, the deposition of the active region can also be carried out at a higher temperature than the deposition of the first doping region. Thus, between the deposition of the active region and the second doping region, the growth temperature can be temporarily lowered to form the first doping region.

[0033] The semiconductor layer sequence is based in particular on a III-V compound semiconductor material, such as AlInGaAsP.

[0034] According to at least one embodiment of the method, the first doping region is formed at a low III-V ratio. This reduced ratio increases the efficiency of incorporating the first dopant, particularly at group IV lattice sites. For example, the III-V ratio is at least ten times lower or at least one hundred times lower than during the deposition of the active region and / or the second doping region.

[0035] According to at least one embodiment of the method, to produce the first doping region, only gas containing the first dopant is supplied without adding any additional gas for the group III atoms and group V atoms. In this way, particularly high concentrations of the first dopant can be achieved in the first doping region.

[0036] Two or more than two of the measures mentioned can also be combined for efficient incorporation of the first dopant, for example the reduced growth temperature and the low III-V ratio or the reduced growth temperature and the exclusive supply of gas with the first dopant.

[0037] The described method is particularly suitable for producing a semiconductor layer sequence for a semiconductor body described above. Features mentioned in connection with the semiconductor body can therefore also be applied to the method, and vice versa.

[0038] Further embodiments and expediencies will become apparent from the following description of the embodiments in conjunction with the figures.

[0039] They show: Fig. 1A shows an embodiment of a semiconductor body in a schematic sectional view; Fig. 1B a corresponding schematic band edge profile of the conduction band E C and the valence band E V along a separation direction Z; Fig. 2 Measurement results of a secondary ion mass spectroscopy (SIMS) measurement of a carbon concentration (curve 66) and an aluminum concentration (curve 67), each as a function of the penetration depth d; Fig. 3 Measurement results of a relative intensity I REL the electroluminescence of a semiconductor body (measurement result 61) and a corresponding reference result 62 for four reference samples; Fig. 4 Measurement results of the increase in relative intensity I REL electroluminescence, increasing the relative external quantum efficiency EQE REL and the change in the forward voltage, each depending on the applied current; Fig. 5 an embodiment of a semiconductor body in a schematic sectional view; and the Fig. 6A and Fig. 6B shows an embodiment of a method for producing a semiconductor layer sequence using intermediate steps each shown in a schematic sectional view.

[0040] Identical, similar or similarly acting elements are provided with the same reference symbols in the figures.

[0041] The figures are schematic representations and therefore not necessarily to scale. Rather, comparatively small elements and, in particular, layer thicknesses may be exaggerated for clarity.

[0042] In Fig. 1A shows an exemplary embodiment of a semiconductor body 1. The semiconductor body has a semiconductor layer sequence 2. The semiconductor layer sequence is arranged on a substrate 5, for example, a growth substrate for epitaxial deposition of the semiconductor layer sequence 2.

[0043] The semiconductor layer sequence 2 has an active region 20 intended for generating radiation, which is arranged between an n-conducting semiconductor layer 21 and a p-conducting semiconductor layer 22. A radiation-emitting component formed by the semiconductor body, such as a light-emitting diode semiconductor chip, expediently has an externally accessible electrical contact for electrically contacting the n-conducting semiconductor layer 21 and the p-conducting semiconductor layer 22, so that by applying an external electrical voltage between these contacts, charge carriers are injected from opposite sides into the active region 20 and can recombine there, emitting radiation. These contacts are not explicitly shown for the sake of simplicity.

[0044] The active region 20 has a quantum structure with a plurality of quantum layers 201 and barrier layers 202 arranged between them. Only three quantum layers are shown in the figure as an example. However, the active region can also have only one or two quantum layers, or more than three quantum layers.

[0045] The p-type semiconductor layer 22 has a first doping region 221 with a first dopant. For example, the first dopant is carbon. Carbon acts as an acceptor by being incorporated into Group V lattice sites.

[0046] The p-type semiconductor layer 22 further comprises a second doping region 222 with a second dopant different from the first dopant. For example, the second dopant is magnesium or zinc. Magnesium or zinc cause p-type doping by incorporation into group III lattice sites.

[0047] The following description is based on a semiconductor layer sequence based on the compound semiconductor material system Al x In y Ga 1-x-y P z Ace 1-Z . Here, 0<=x<=1, 0<=y<=1, x+y<=1, and 0<=z<=1 apply. However, the method is also applicable to other compound semiconductor material systems.

[0048] Gallium arsenide, for example, is a suitable growth substrate for the semiconductor layer sequence. For the active region, z>=0.9, for example, z=1, is particularly important.

[0049] Alternatively, however, another semiconductor material, in particular another III-V compound semiconductor material, can also be used.

[0050] The first doping region 221 has a comparatively small thickness compared to the second doping region 222. For example, the second doping region is at least five times as thick or at least ten times as thick as the first doping region 221.

[0051] The first doping region 221 is arranged between the active region 20 and the second doping region 222. In particular, the first doping region 221 directly adjoins the active region 20. In the vertical direction, i.e., parallel to the deposition direction Z and perpendicular to a main extension plane of the semiconductor layers of the semiconductor layer sequence, viewed from the n-conducting semiconductor layer 21 in the direction of the active region, the first doping region 221 is therefore the first p-conducting semiconductor layer of the semiconductor body 1.

[0052] It has been shown that, by appropriately selecting the deposition conditions, it is possible to produce a first doping region 221, in particular one doped with carbon, which is characterized by a high two-dimensional areal doping density and can have a small thickness in the vertical direction. For example, the thickness of the first doping region 221 is between one monolayer and 2 nm. In particular, carbon doping is characterized by the fact that the carbon atoms do not diffuse within the semiconductor body, or at least only to a negligible extent. This allows for higher doping concentrations, especially higher surface doping concentrations, than with the commonly used dopants magnesium and zinc. Carbon is incorporated into Group V lattice sites and thus acts as an acceptor.

[0053] The p-conducting semiconductor layer 22 thus has two doping regions in each of which a p-doping takes place, wherein the incorporation of the first dopant in the first doping region takes place on group V lattice sites and the incorporation of the second dopant in the second doping region 222 takes place on group III lattice sites.

[0054] In the illustrated embodiment, the p-type semiconductor layer 22 further comprises a contact layer 223 that delimits the semiconductor body in the vertical direction. A semiconductor material with a low phosphorus content, for example, z<=0.1 or z=0, such as an AlGaAs semiconductor layer, can be used for this contact layer. The contact layer serves, in particular, to improve electrical contacting of the semiconductor body via a contact applied to the semiconductor body (not explicitly shown).

[0055] Like the one in Fig. 1B shows the band edge profile for the conduction band E C and the valence band E V As shown, a charge carrier barrier is formed by means of the first doping region 221 in the conduction band, which prevents electrons from transferring from the active region 20 into the p-conducting semiconductor layer 22. This increases the probability that the charge carriers in the active region 20 will radiatively recombine. Regarding the group III components, the first doping region 221 and the material of the second doping region 222 adjacent to the first doping region do not need to differ for this purpose.

[0056] In the Fig. Figure 2 shows SIMS measurement results for the carbon content (curve 66) and the aluminum content (curve 67). The aluminum content clearly shows the spatial position of the active region 20, since this region has a comparatively low aluminum content. Curve 66 demonstrates that carbon incorporation occurs with a high concentration and a small vertical extent along the penetration depth d during the SIMS measurement. In particular, the incorporation occurs in a semiconductor material with a high phosphorus content, such as a phosphorus content of z>=0.9, approximately z=1. Until now, it had been assumed that carbon incorporation cannot occur efficiently in such a semiconductor material.

[0057] A doping concentration in the first doping region 221 is, for example, between and including 1 × 10 19 cm -3 and including 1 × 10 22 cm -3 , in which Fig. 2 shown embodiment, for example, 3.27 × 10 21 cm -3 . Based on a thickness of 2 nm, this corresponds to an area doping density of between 2 × 10 12 cm -2 and including 2 × 10 15 cm -2 , in the example 6.54 × 10 14 cm -2 .

[0058] In Fig. 3 shows a measurement result 61 of an electroluminescence measurement of such a semiconductor layer sequence for a sample n = 4, wherein the four further samples n = 1, 2, 3 and 5 each provide reference results 62. The samples underlying the reference measurement differ in that they do not have a first doping region 221. The measurements therefore demonstrate that the intensity of the measurement result 61 is more than 10% higher than the corresponding reference result 62. For semiconductor components manufactured from such a semiconductor layer sequence, the increase in efficiency depends, among other things, on the operating current, as can be seen from the Fig. 4 is described below.

[0059] In the Fig. 4 shows measurement results which show the increase in the relative intensity ΔI REL of electroluminescence as curve 71, the increase of the relative external quantum efficiency ΔEQE RELas curve 72 and the change in the forward voltage ΔV F , each as a function of the applied current as curve 73.

[0060] For the determination of ΔI REL An average of measurements was performed on 2000 LED semiconductor chips with an area of 1 mm² and an emission wavelength of 590 nm. In contrast to the test samples, the reference samples do not have a first doping region. For ΔI REL ΔI applies REL = (I T - I R ) / I R *100%, where I T the average intensity of the electroluminescence of the test samples and I R is the averaged intensity of the electroluminescence of the reference samples.

[0061] Accordingly, ΔEQE REL = (EQE T - EQE R ) / EQE R *100%, where EQE T the external quantum efficiency of the test samples averaged over 11 measurements and EQE Ris the external quantum efficiency of the reference samples averaged over 11 measurements. To determine the increase in forward voltage ΔV f = V fT - V fR an average of the forward voltage of the test samples V fT and the forward voltage of the reference samples V fR over 2000 measurements were carried out each.

[0062] The measurements demonstrate a significant increase in both external quantum efficiency and electroluminescence, with the increase being greater at lower currents than at higher currents. For currents between 1 mA and 10 mA, the increase is over 50% in each case, and in some cases over 60%.

[0063] The forward voltage V fCompared to the reference samples, the test samples increase by approximately 12 mV at low currents between 1 mA and 10 mA. For higher current values, the increase decreases almost continuously, dropping to a value of approximately 6 mV at currents of 100 mA.

[0064] Overall, a significant increase in electroluminescence and external quantum efficiency can be achieved with only a slight increase in the forward voltage, with the efficiency increase being particularly high at currents below 100 mA, especially below 10 mA.

[0065] The Fig. The embodiment of a semiconductor body shown in Figure 5 essentially corresponds to the one described in connection with the Fig. 1A and Fig. 1B. In contrast, the p-conducting semiconductor layer 22 has, in addition to the first doping region 221 and second doping region 222, a further first doping region 225. The further first doping region 225 can be formed, in particular, as described in connection with the first doping region 221. The p-conducting semiconductor layer 22 thus has two doping regions with the first dopant, with a partial region of the second doping region 222 being arranged between these two doping regions.

[0066] A distance between the first doping region 221 and the further first doping region 225 is preferably at most 5 nm.

[0067] Such an additional first doping region can lead to an enhancement of the charge carrier barrier effect.

[0068] An embodiment of a method for producing a semiconductor layer sequence is described in the Fig. 6A and Fig. 6B. A substrate 5, particularly in the form of a growth substrate, is provided. GaAs is suitable, for example.

[0069] A semiconductor layer sequence is grown on the substrate, comprising an active region 20 intended for generating radiation, which is arranged between an n-conducting semiconductor layer 21 and a p-conducting semiconductor layer 22. The p-conducting semiconductor layer has a first doping region 221 with a first dopant and a second doping region 222 with a second dopant different from the first dopant. The deposition parameters during the production of the first doping region are selected to ensure efficient incorporation of the first dopant.

[0070] It has been shown that comparatively low growth temperatures of up to 600 °C, for example, up to 580 °C, approximately 560 °C, or 540 °C, result in efficient incorporation of carbon into Group V lattice sites. At typical deposition temperatures of 700 °C or more for the AlInGaPAs semiconductor material system, however, efficient incorporation of carbon into the first doping region is not achieved.

[0071] However, alternatively or in addition to reducing the growth temperature, other measures can also be taken to effect the incorporation of the first dopant, such as carbon.

[0072] For example, the incorporation efficiency can be achieved by depositing the first doping region 221 at a low III / V ratio. For example, the III / V ratio during the deposition of the first doping region 221 is at least ten times lower or at least one hundred times lower than during the deposition of the active region 20 and / or the second doping region 222.

[0073] Alternatively, to produce the first doping region, at least temporarily, only gas containing the first dopant can be supplied without adding any additional gas for the group III atoms and the group V atoms (e.g., organometallic compounds such as TMA, TMG, TMI, or P and As). To produce semiconductor components such as light-emitting diode semiconductor chips, the semiconductor layer sequence can subsequently be further processed into individual semiconductor bodies.

[0074] For example, the n-conducting semiconductor layer 21 and the p-conducting semiconductor layer 22 each comprise AlInP, wherein these layers are expediently lattice-matched or at least nearly lattice-matched with respect to the growth substrate, such as GaAs, with a maximum relative deviation of the lattice constant of 2%. In this case, the phosphorus content is z=1. However, a lower phosphorus content can also be used, for example, z>=0.9.

[0075] Leakage currents that reduce efficiency are thus effectively suppressed by means of the first doping region 221, resulting in higher radiation generation efficiency.

[0076] The described design of a charge carrier barrier by means of a doping region with a particularly high doping concentration is particularly suitable for semiconductor layers whose band gap can no longer be easily increased by varying the composition of the group III atoms.

Claims

[1] Radiation-emitting semiconductor body (1) with a semiconductor layer sequence (2) which has an active region (20) provided for generating radiation, an n-conducting semiconductor layer (21) and a p-conducting semiconductor layer (22), wherein - the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer, - the p-type semiconductor layer has a first doping region (221) with a first dopant and a second doping region (222) with a second dopant different from the first dopant, and - the p-conductive semiconductor layer has a further first doping region (225) which is doped with the first dopant and has a thickness of at most 2 nm. [2] Radiation-emitting semiconductor body according to claim 1, wherein the first doping region has a thickness of at most 2 nm. [3] Radiation-emitting semiconductor body according to claim 1 or 2, wherein the first dopant and the second dopant each cause a p-doping. [4] Radiation-emitting semiconductor body according to one of the preceding claims, wherein the semiconductor body is based on a III-V compound semiconductor material. [5] Radiation-emitting semiconductor body according to claim 4, wherein the first dopant is incorporated on group V lattice sites. [6] Radiation-emitting semiconductor body according to one of the preceding claims, wherein the first dopant is carbon. [7] Radiation-emitting semiconductor body according to claim 6, wherein the semiconductor body is based on a III-V compound semiconductor material and the second dopant is incorporated on group III lattice sites. [8] Radiation-emitting semiconductor body according to one of the preceding claims, wherein the first doping region is arranged between the active region and the second doping region. [9] Radiation-emitting semiconductor body according to one of the preceding claims, wherein the first doping region and the second doping region are directly adjacent to one another. [10] Radiation-emitting semiconductor body according to one of the preceding claims, wherein the first doping region forms a charge carrier barrier for electrons. [11] Radiation-emitting semiconductor body according to one of the preceding claims, wherein the first doping region and the further doping region are spaced apart from each other by at most 5 nm. [12] Method for producing a semiconductor layer sequence comprising the steps: a) providing a substrate (5); and b) growing a semiconductor layer sequence (2) which has an active region (20) provided for generating radiation, an n-conducting semiconductor layer (21) and a p-conducting semiconductor layer (22), wherein - the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer, - the p-type semiconductor layer has a first doping region (221) with a first dopant and a second doping region (222) with a second dopant different from the first dopant, and - the p-conductive semiconductor layer has a further first doping region (225) which is doped with the first dopant and has a thickness of at most 2 nm. [13] The method of claim 12, wherein the first doping region is deposited at a temperature of at most 600°C. [14] Method according to claim 12 or 13, wherein the semiconductor layer sequence is based on a III-V compound semiconductor material and wherein the first doping region is formed at a lower III / V ratio than the active region and / or the second doping region. [15] Method according to one of claims 12 to 14, wherein the semiconductor layer sequence is based on a III-V compound semiconductor material and, for producing the first doping region, at least temporarily only gas with the first dopant is supplied without supplying a further gas for the group III atoms and group V atoms. [16] Method according to one of claims 12 to 15, in which a semiconductor body according to one of claims 1 to 11 is produced.

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