Semiconductor device for a light source module, a display panel or a display device

Abstract

Semiconductor device comprising the following: a first pixel (PA) which has a blue subpixel (B), a green subpixel (G) and a red subpixel (R) which are placed adjacent to each other, wherein the red subpixel (R) has a first light-emitting diode (C1; C1'; C1'') and a first transparent material which is embedded with a first phosphor (P1) on the first light-emitting diode (C1; C1'; C1'') to emit a first light from the red subpixel (R), wherein the first light is red light which has a peak intensity at a wavelength of 600 nm or more, wherein the green subpixel (G) has a second light-emitting diode (C2; C2'; C2'') and a second transparent material which is embedded with a second phosphor (P2) on the second light-emitting diode (C2; C2'; C2'') to emit a second light from the green subpixel (G), wherein the second light is green light which has a peak intensity at a wavelength between 500 nm and 600 nm, and the blue subpixel (B) comprises a third light-emitting diode (C3; C3'; C3'') and a third transparent material which is embedded with a third phosphor (PT) and a light-absorbing material (LA) on the third light-emitting diode (C3; C3'; C3'') to emit third light from the blue subpixel (B), wherein the third light is blue light and wherein a spectrum of the third light emitted by the blue subpixel (B) has only two peaks consisting of a first peak (①) with a primary peak intensity and a second peak (②) with a secondary peak intensity, wherein the primary peak intensity is greater than the secondary peak intensity, and wherein the light-absorbing material (LA) reduces the intensity of the second peak (②).

Description

BACKGROUND 1. AREA

[0001] The inventive concept relates to a semiconductor device for a light source module, a display field and a display device. 2. DESCRIPTION OF THE STATE OF THE ART

[0002] Semiconductor light-emitting diodes (LEDs) have been used as light sources in various electronic products and lighting devices. In particular, semiconductor LED devices are widely used as light sources in various display devices such as TVs, mobile phones, PCs, laptops, and PDAs.

[0003] Display devices generally feature display fields, such as liquid crystal displays (LCDs), and backlights. Recently, however, display devices that use an LED as a single pixel, eliminating the need for backlighting, have become popular. Such displays can be manufactured to be compact and can be implemented as high-luminance displays with improved optical efficiency compared to conventional LCDs. Additionally, these displays can be designed and manufactured to easily change the display's aspect ratio and can be implemented in large formats, enabling large displays of various shapes.

[0004] However, there is a problem in that target color coordinates are difficult to implement in such LED display fields due to variations in optical characteristics (for example, peak wavelength or luminance characteristics) of the LED chips that form the subpixels.

[0005] US 2010 / 0087108A1 discloses an LED device comprising a substrate, a cup structure, and a partition structure. The partition structure divides a receiving space formed by the cup structure into a first region and a second region. A first blue light chip and a first colloidal housing are arranged in the first region, and a second blue light chip and a second colloidal housing are arranged in the second region. In the second housing, a green phosphor is colloidally mixed to completely convert the monochromatic emission spectrum of a second blue light band from the second blue light chip into a monochromatic emission spectrum of a green light band. The green phosphor is selected from a silicate, oxynitride, lutetium aluminum oxide, and calcium scandium oxide.

[0006] DE 10 2016 109 616 A1 discloses a light-emitting semiconductor device comprising: a light-emitting structure comprising a semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type, each providing a first surface and a second surface opposite each other, of the light-emitting structure, and an active layer arranged between the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, wherein a region of the semiconductor layer of the first conductivity type is open towards the second surface, and wherein the first surface has a concave-convex section arranged on it;a first electrode and a second electrode, each arranged in the region of the semiconductor layer of the first conductivity type and a region of the semiconductor layer of the second conductivity type, respectively; a transparent support substrate arranged on the first surface of the light-emitting structure; and a transparent adhesive layer arranged between the first surface of the light-emitting structure and the transparent support substrate.

[0007] WO 2008 / 109296A1 discloses light-emitting systems and methods for manufacturing them. The light-emitting system comprises two or more monolithically integrated luminescent elements. Each luminescent element comprises an electroluminescent device and a dedicated circuit for controlling the electroluminescent device. At least one luminescent element comprises a potential well for down-converting light emitted by the electroluminescent device into the luminescent element.

[0008] US 2011 / 0241044A1 discloses a white light-emitting diode and a liquid crystal display device that generates images using the white light provided. The white light-emitting diode comprises a blue light-emitting diode (“LED”) light source and a light-conversion layer that converts incident light from the LED light source into white light. The light-conversion layer comprises green-emitting semiconductor nanocrystals and red-emitting semiconductor nanocrystals. The peak wavelength of light emission of the green light-emitting semiconductor nanocrystal is approximately 520 nanometers (nm) or more, the peak wavelength of light emission of the red semiconductor nanocrystal is approximately 610 nanometers (nm) or more, and the full width at half maxima (FWHMs) of the light-emitting peaks of the green and red light-emitting semiconductor nanocrystals is approximately 45 nanometers (nm) or less.

[0009] US 2001 / 0001207A1 discloses a white light-emitting diode comprising a light-emitting component using a semiconductor as the light-emitting layer and a phosphor that absorbs some of the light emitted by the light-emitting component and emits light with a different wavelength than that of the absorbed light, wherein the light-emitting layer of the light-emitting component is a nitride compound semiconductor and the phosphor contains a cerium-activated garnet fluorescent material containing at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm and at least one element selected from the group consisting of Al, Ga and In, and is subject to less deterioration of emission properties even when used at high luminance for a long period of time. SUMMARY

[0010] Exemplary embodiments include an LED subpixel, an LED pixel comprising a plurality of subpixels, an LED light source module with improved color characteristics, a display field or other display device comprising the same, and methods for manufacturing them. The invention is defined in the accompanying independent claim. Further developments of the invention are specified in the dependent claims. The semiconductor device of the present invention is characterized in that it comprises a light-absorbing material.

[0011] According to some examples, a semiconductor device can have a first pixel comprising a red subpixel configured to emit a first light having a primary peak intensity of red light, such as a wavelength within a first peak range of 630 to 780 nm; a green subpixel configured to emit a second light having a primary peak intensity of green light, such as a wavelength within a second peak range of 500 to 600 nm; and a blue subpixel configured to emit a third light having a primary peak intensity of blue light, such as a wavelength within a third peak range of 420 to 480 nm, wherein the red subpixel, the green subpixel, and the blue subpixel are placed adjacent to each other, with the red subpixel,The green subpixel and the blue subpixel each have a light-emitting diode (LED) and a transparent material positioned to receive light from the respective LED, wherein a first subpixel is one of the red subpixel, the green subpixel, and the blue subpixel, and second subpixels are others of the red subpixel, the green subpixel, and the blue subpixel that are not the first subpixel, wherein the first subpixel has a tuning phosphor embedded in the transparent material of the first subpixel, the tuning phosphor having a material property to absorb light emitted by the LED of the first subpixel and to emit light that does not have a wavelength of the absorbed light, causing the light emitted by the first subpixel to have a secondary peak intensity.which has a wavelength within the peak region of one of the second subpixels. Subpixel-generating colors other than red, green, and blue can also be used to form a pixel, wherein at least one of these subpixels has a wavelength conversion material to emit light other than the principal color of the light emitted by the subpixel.

[0012] A display field or other display device can be formed from a plurality of such pixels.

[0013] According to some examples, a method for fabricating comprises forming a section of a pixel, comprising forming a first, a second, and a third light-emitting diode as part of a first, second, and third subpixel; applying a voltage across electrodes of the first light-emitting diode to cause the first light-emitting diode to emit light; measuring a light intensity emitted by the first light-emitting diode; determining an amount of a tuning phosphor in response to the measurement of the light intensity; and forming a first transparent material on the first subpixel with a tuning phosphor, wherein an amount of the tuning phosphor within the transparent material is selected in response to the measurement of the light intensity emitted by the first light-emitting diode.

[0014] The methods may include forming the first light-emitting diode, the second light-emitting diode and the third light-emitting diode on a semiconductor wafer; and singulating a semiconductor chip from the semiconductor wafer, wherein the semiconductor chip comprises the first light-emitting diode, the second light-emitting diode and the third light-emitting diode, wherein the formation of the first transparent or light-transmitting material is carried out on the first subpixel while the semiconductor chip is part of the semiconductor wafer before the semiconductor chip is singulated from the wafer.

[0015] The first subpixel can be a blue subpixel, the second subpixel can be a green subpixel, and the third subpixel can be a red subpixel, with the blue, green, and red subpixels positioned adjacent to each other. The first transparent material can be embedded with a first phosphor on the first light-emitting diode to emit a first light, which has a primary peak intensity of blue light with a wavelength less than 500 nm and a secondary peak intensity of first green light with a wavelength between 500 nm and 600 nm, the primary peak intensity of blue light being greater than the secondary peak intensity of first green light.

[0016] The green subpixel can contain a second transparent material embedded with a second phosphor on the second LED to emit a second light with a peak intensity of green light at a wavelength between 500 nm and 600 nm. The red subpixel can contain a third transparent material embedded with a third phosphor on the third LED to emit a third light with a peak intensity of red light at a wavelength of 600 nm or higher. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other aspects, features and advantages of the present inventive concept will be more clearly understood from the following detailed description taken together with the accompanying drawings, in which: Fig. 1 and Fig. 2 each are a top view and a bottom view, which schematically illustrate a light source module according to an exemplary embodiment; Fig. 3 and Fig. Four side cross-sectional views are shown, each taken along lines II' and II-II' of the light source module, which is located in Fig. 1 is illustrated; Fig. 5 illustrates a light emission spectrum of a light source module according to an exemplary embodiment; Fig. Graphs 6A to 6C illustrate a tuning of color coordinates according to the intensity of a subpeak in the light emission spectrum, which is shown in Fig. 5 is illustrated; Fig. 7 is a flowchart illustrating an example of a method for tuning color coordinates of a light source module according to an exemplary embodiment; Fig. 8 is a side cross-sectional view illustrating a light source module according to an exemplary embodiment; Fig. 9 is a side cross-sectional view illustrating a light source module according to an exemplary embodiment; Fig. 10 a light emission spectrum of the light source module, which is in Fig. 9 is illustrated; Fig. 11 illustrates a light emission spectrum of a third light-adapting part (blue) in a light source module according to an exemplary embodiment; Fig. 12A and Fig. 12B each show a top view and a bottom view illustrating a light source module according to an exemplary embodiment; Fig. 13A and Fig. 13B each show a top view and a bottom view illustrating a light source module according to an exemplary embodiment; Fig. 14 is a CIE 1931 color space chromaticity diagram, which is provided to illustrate a wavelength conversion material of a light source module according to an exemplary embodiment; Fig. 15 is a schematic perspective view of a display field, which is the light source module that is in Fig. 1 is illustrated, shows; Fig. 16 an example of a circuit configuration of a pixel area of ​​the display field, which is in Fig. 15 is illustrated; Fig. 17 is a schematic perspective view illustrating a display field according to an exemplary embodiment; Fig. 18 is a side cross-sectional view, taken from a pixel area of ​​the display field, which is in Fig. 17 is illustrated; Fig. 19A and Fig. 19B Cross-sectional views are shown, illustrating LED chips which have different structures according to exemplary embodiments; Fig. 20 is a block diagram illustrating a configuration of a display device according to an exemplary embodiment; Fig. 21 is a perspective view of a flat lighting device in which a light source module according to an exemplary embodiment can be used; Fig. 22 illustrates an interior lighting control network system in which a light source module can be used according to an exemplary embodiment; and Fig. Figure 23 illustrates an open network system in which a light source module can be used according to an exemplary embodiment. DETAILED DESCRIPTION

[0018] The present disclosure will now be described in more full below with reference to the accompanying drawings, in which various embodiments are shown. The invention should not be considered as limited to the exemplary embodiment described herein by way of example.

[0019] Throughout this description, it will be understood that when an element such as a layer, region, or wafer (substrate) is referred to as "on," "connected to," or "coupled to" another element, it may be directly "on," "connected to," or "coupled to" the other element, or other intervening elements may be present. Conversely, when an element is referred to as "directly on," "directly connected to," or "directly coupled to" another element, no intervening elements or layers may be present. The same reference symbols consistently refer to the same elements. When used herein, the term "and / or" includes any and all combinations of one or more of the related listed items.

[0020] It will become apparent that, although the terms first, second, and third may be used herein to describe different elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections should not be restricted by these terms. These terms are used merely to distinguish one element, component, region, layer, or section from another. Accordingly, a first element, component, region, layer, or section discussed below could be designated as a second element, component, region, layer, or section without departing from the teachings of the exemplary embodiments.

[0021] Spatially relative terms such as "above," "upper," "below," and "lower," and the like, may be used herein to facilitate description and to describe the relationship of one element to another, as shown in the figures. It will be understood that these spatially relative terms are intended to encompass different orientations of the device in use or operation, in addition to the orientation depicted in the figures. For example, if the device in the figures is reversed, elements described as "above" or "above" other elements would then be oriented "below" or "lower" than the other elements or features. Thus, the term "above" can encompass both orientations above and below, depending on a particular direction shown in the figures.The device may be oriented differently (rotated by 90 degrees or in other orientations) and the spatially relative descriptors used herein may be interpreted accordingly.

[0022] The terminology used herein is solely for the purpose of describing certain embodiments and is not intended to be limiting to the present inventive concept. When used herein, the singular forms "a" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Furthermore, it shall be understood that the terms "includes" and / or "including," when used in this description, specify the presence of said features, integers, steps, operations, components, elements, and / or groups thereof, but do not exclude the presence or addition of one or more features, integers, steps, operations, components, elements, and / or groups thereof.

[0023] The Fig. 1 and Fig. Figures 2 and 2 are a top view and a bottom view, which schematically illustrate a light source module according to an exemplary embodiment of the present inventive concept, and which Fig. 3 and Fig. Figure 4 are side cross-sectional views, each along lines II' and II-II' of the light source module, which is located in Fig. 1 is illustrated, are recorded.

[0024] Referring to the Fig. 3 and Fig. 4 together with the Fig. 1 and Fig. 2. A light-emitting diode (LED) light source module 50 according to the exemplary embodiment can have a cell arrangement or cell array CA, which has a first to third LED cell C1, C2 and C3, a first to third light-controlling part 51, 52 and 53, which are each arranged to correspond to the first to third LED cell C1, C2 and C3 on a surface of the cell arrangement CA, and a side wall 45 which separates the first to third light-controlling part 51, 52 and 53.

[0025] Each of the first to third LED cells C1, C2 and C3 can have a semiconductor layer 13 of a first conductivity type, an active layer 15 and a semiconductor layer 17 of a second conductivity type, as shown in the Fig. 3 and Fig. Figure 4 illustrates this. The semiconductor layer 13 of the first conductivity type, the active layer 15, and the semiconductor layer 17 of the second conductivity type can be formed from the same materials, such as epitaxial crystalline layers grown epitaxially on a single wafer in the same process. The active layers 15 of the first to third LED cells C1, C2, and C3 can be formed to emit the same color of light (for example, light with the same wavelengths and / or light spectrum). For example, the active layers 15 can emit blue light (for example, light with a wavelength in the range of 440 nm to 460 nm) or ultraviolet light (for example, light with a wavelength in the range of 380 nm to 440 nm).

[0026] The cell arrangement CA can have an insulating part 21 which surrounds the first to third LED cells C1, C2 and C3. The insulating part 21 can electrically isolate the first to third LED cells C1, C2 and C3 from each other. As shown in Fig. As illustrated in Figure 4, the insulating part 21 can have an upper surface which is essentially coplanar with the upper surfaces of the first to third LED cells C1, C2 and C3, wherein such upper surfaces are a planar upper surface of the cell arrangement CA (horizontal and perpendicular with respect to Fig. 4) form and form an inner surface of the light source module 50. Such coplanarity of the upper surfaces and the planarity of the upper surface of the cell assembly CA can be achieved by removing a wafer, which is used as a growth base and a support structure, from the upper surface of the cell assembly CA after isolating the first to third LED cells C1, C2 and C3 and forming the insulating part 21.

[0027] The insulating part 21 can be an electrically insulating material. For example, the insulating part 21 can be silicon oxide, silicon oxynitride, or silicon nitride. The insulating part 21 according to the exemplary embodiment can further comprise a material with low light absorption or a reflective material or structure. Such a reflective insulating part 21 can block mutual optical interference to ensure independent operation of the first to third LED cells C1, C2, and C3. In some exemplary embodiments, the insulating part 21 can have a distributed Bragg reflector (DBR) structure in which a plurality of insulating layers, each with different refractive indices, are alternately stacked or layered.If the insulating part 21 is formed as a DBR structure, the multiple insulating layers, which have different refractive indices, can be repeatedly stacked, for example, two to 100 times. Such a multiple of insulating layers can be selected from oxides or nitrides, such as two or more of SiO2, SiN, or SiO. x N y , TiO2, Si3N4, Al2O3, ZrO2, TiN, AlN, TiAlN, and TiSiN.

[0028] The reflective insulating part 21 and the side wall 45 can be connected to each other. The side wall 45 can be formed to extend vertically from the insulating part 21. Since the reflective insulating part 21 and the side wall 45 are designed to form a structure that surrounds each of the first to third LED cells C1, C2, and C3 and each of the first to third light-controlling parts 51, 52, and 53, optical interference between the first to third LED cells C1, C2, and C3 can be effectively blocked. Therefore, all optical paths, or paths of light, generated by the first to third LED cells C1, C2, and C3 can be effectively isolated from each other.

[0029] The lower surface of the LED light source module 50 can be formed as the other main surface of the cell arrangement CA and can have an electrode portion which is electrically connected to the first to third LED cells C1, C2 and C3. The electrode portion can be configured to selectively drive or operate the first to third LED cells C1, C2 and C3.

[0030] In the exemplary embodiment, as shown in Fig. As illustrated in Figure 2, the electrode part has three first electrode contact points 31a, 31b, and 31c, each connected to the three cells C1, C2, and C3, and a second electrode contact point 32, which is generally connected to the three cells C1, C2, and C3. Each of the electrode contact points 31a, 31b, 31c, and 32 can be an external connection to provide an electrical connection to the LED light source module 50 and can be exposed with respect to an encapsulation 34.

[0031] The three first electrode contact points 31a, 31b, and 31c can be independently connected to the semiconductor layers 13 of the first conductivity type of the first to third LED cells C1, C2, and C3 by three first connecting electrodes 27. The second electrode contact point 32 can be connected together with the semiconductor layers 17 of the second conductivity type of the first to third LED cells C1, C2, and C3 by a single second connecting electrode 28. The first and second connecting electrodes 27 and 28 can each be connected to the semiconductor layers 13 and 17 of the first and second conductivity types via first and second through-holes H1 and H2, which are formed in the insulating part 21. The electrode part according to the exemplary embodiment can further comprise first and second contact electrodes 23 and 24.The first and second through-holes H1 and H2 can partially expose the first and second contact electrodes 23 and 24 to connect to the first and second connecting electrodes 27 and 28. While the first connecting electrodes 27 are formed independently in three first through-holes H1, the second connecting electrode 28 can be formed such that sections of it formed in three second through-holes H2 are connected to each other. Such an electrode structure can be modified in various ways according to the arrangement of the cells and electrode contact points. This will be described in detail later.

[0032] The LED light source module 50 can have an encapsulation 34 that encapsulates the LED cell arrangement CA while exposing the first electrode contact points 31a, 31b, and 31c and the second electrode contact point 32. The encapsulation 34 can have a high Young's modulus or modulus of elasticity to provide stable support for the LED light source module 50. Additionally, the encapsulation 34 can be made of a material with high thermal conductivity to effectively dissipate heat from the LED cells C1, C2, and C3. For example, the encapsulation 34 can be made of epoxy resin or silicone resin. Furthermore, the encapsulation 34 can include a light-reflecting particle to reflect light. The light-reflecting particle can be titanium dioxide (TiO2) or aluminum oxide (Al2O3), but is not limited to these materials.

[0033] The side wall 45 can have first to third emission windows W1, W2, and W3 located at positions corresponding to the first to third LED cells C1, C2, and C3. The first to third emission windows W1, W2, and W3 can each be configured as spaces for the first to third light-controlling parts 51, 52, and 53. The side wall 45 can have a light-blocking material (an opaque material) to prevent interference from light passing through the first to third light-controlling parts 51, 52, and 53. For example, the side wall 45 can have a black matrix resin.

[0034] The first to third light-controlling parts 51, 52, and 53 can control light emitted by the first to third LED cells C1, C2, and C3 to convert the light into light of different colors. According to the exemplary embodiment, the first to third light-controlling parts 51, 52, and 53 can each be configured to provide red light, green light, and blue light, respectively.

[0035] As described in the exemplary embodiment, if the first to third LED cells C1, C2 and C3 emit blue light, the first and second light-controlling parts 51 and 52 can have first and second wavelength conversion parts 51a and 52a, respectively, each containing red and green phosphors P1 and P2. As described in the Fig. 3 and Fig. As illustrated in Figure 4, the first and second wavelength conversion sections 51a and 52a can be formed by distributing a light-transmitting liquid resin (which subsequently hardens) containing red and green phosphors P1 and P2, respectively, within the first and second light-emitting windows W1 and W2, respectively. However, this is not the only possible configuration. The light-transmitting material is a material that is permeable to light, which can be translucent or transparent (when referring to a light control section, "permeable" means permeable to light emitted by an LED cell according to the light control section, and complete transmission of such light is not required). The first and second wavelength conversion sections 51a and 52a can be formed in various other processes.For example, the first and second wavelength conversion part 51a and 52a can be provided as wavelength-converting films or layers (for example, formed separately and attached to an upper surface of the LED cells CA).

[0036] In this example, the first and second light-controlling parts 51 and 52 can further comprise light-filter layers 51b and 52b, which are arranged on the first and second wavelength-conversion parts 51a and 52a, respectively, and selectively block blue light. Using the light-filtering layers 51b and 52b, the first and second light-emitting windows W1 and W2 can each provide only red light and green light, respectively.

[0037] As in Fig. As illustrated in Figure 4, the third light-controlling part 53, according to the exemplary embodiment, can comprise a tuning wavelength conversion material PT. The tuning wavelength conversion material PT can be a wavelength conversion material that uses light emitted by the third LED cell C3 as excitation light to emit light that has a different color from the majority of light emitted by the subpixel comprising the third LED cell C3.For example, the tuning wavelength conversion material PT can incorporate one or more of the green and red phosphors to convert light emitted by the third LED cell into a second color, such as green or red light, where the majority of light emitted by subpixel B is blue light (for example, with a wavelength less than 500 nm or less than 480 nm, such as between 420 nm and 480 nm or between 440 nm and 460 nm). In some examples, the majority of light emitted by subpixel B can have a wavelength similar to that produced by the third LED cell (for example, the majority of light emitted by the subpixel can be produced by the third LED cell CA of the subpixel).In some examples, a wavelength conversion material for emitting light of a first color, such as blue or bluish green (for example, light with a wavelength in the range of 480 nm to 520 nm), may also be contained in the tuning wavelength conversion material PT. In this example, since the tuning wavelength conversion material PT is used to adjust the color coordinates of the blue light provided by the third light-controlling part 53, the phosphor content in the tuning wavelength conversion material PT may be lower than the content of phosphors used as wavelength conversion materials in the other wavelength conversion parts 51a and 52a, which provide the other colors.

[0038] Fig. Figure 5 illustrates an example of a light emission spectrum of a light source module according to an exemplary embodiment.

[0039] Referring to Fig. 5 in the light emission spectrum is the light emitted by the subpixels R, G, B, showing the light which is adapted by the first to third light-controlling parts 51, 52 and 53, respectively, shown as R, G and B (where each has a normalized intensity, as in Fig. (as shown in Figure 5). The blue light B, which is adjusted in the third light-controlling part 53, can be configured to have a first peak ① and a second peak ②, which has a lower intensity than the first peak ①. The first peak ① can be the maximum intensity emitted by the blue subpixel B, and the second peak ② can correspond to a local maximum of the intensity emitted by the blue subpixel B. A reference here to a “peak wavelength” refers to a wavelength of light corresponding to a particular peak, such as the first peak ① or the second peak ②. The first peak ① can be a main peak belonging to a preferred color range (for example, blue in this example), and the second peak ② can be a subpeak belonging to a different wavelength band to fine-tune color coordinates.The second peak ② may be a local intensity maximum, exhibiting the highest intensity among all local maxima other than the first peak ①, or other local maxima may have greater intensity. Additionally or alternatively, the second peak ② may correspond to a local intensity maximum with a peak wavelength of 500 nm or greater, and / or with a peak wavelength 50 nm greater than the first peak wavelength, and / or 80 nm or greater than the first peak wavelength. The intensities herein reflect intensity measurements from a spectrometer with a resolution of approximately 50 nm full width at half maximum (FWHM). As is known, the resolution of the spectrometer reflects its ability to measure the intensity of the wavelength of interest and to remove (filter) light outside the wavelength of interest.It will, however, be acknowledged that higher-resolution measurements may reveal different local minima of the intensity measurements, leading to additional local maxima which, in this description, can be considered part of a larger local maximum. Accordingly, the light intensity peaks (peak wavelengths), minima, troughs, etc., as referred to in this description and the claims, refer to intensity peaks / minima / troughs corresponding to intensity measurements with a spectral resolution of at least 100 nm (full width at half maximum).

[0040] In some exemplary embodiments, the wavelength of the first peak ① can be in the range of 440 nm to 460 nm, and the wavelength of the second peak ② can be in the range of 500 nm to 600 nm, between 520 nm and 600 nm, and / or less than 550 nm (for example, greater than 500 nm or 520 nm and less than 550 nm). More precisely, according to the exemplary embodiment, the wavelength of the first peak ① can be a blue peak wavelength of blue light and can correspond to light emitted by the third LED cell C3, and the wavelength of the second peak ② can be a green peak wavelength of green light.In some exemplary embodiments, the tuning wavelength conversion material PT of the third light-controlling part 53 may include a green phosphor to generate the green light of the second peak, and such a green phosphor may be the same (for example, with the same composition) as the green phosphor P2 of the second light-controlling part 52. In this case, the amount of green phosphor of the tuning wavelength conversion material PT of the third light-controlling part 53 may be less than the amount of green phosphor P2 of the second light-controlling part 52. The second peak ② of the green light emitted by the third LED cell C3 may have a wavelength within 20 nm and / or within 10 nm and / or may be substantially the same as the wavelength of the peak intensity of the light emitted by the second LED cell C2.

[0041] As described above, unlike in the exemplary embodiment, the wavelength of the second peak ② can be within a different visible light band, such as a bluish-green band (e.g., 480 nm to 520 nm), a yellowish-red band (e.g., 600 nm to 630 nm), or a red band (e.g., 630 nm to 780 nm). Such a wavelength can be selected depending on the type of tuning wavelength conversion material PT. If the wavelength of the second peak ② of the tuning wavelength conversion material PT is adjacent to the wavelength of the first peak ①, for example, in the case of a bluish-green phosphor, the light emitted by the third light-controlling part 53 can have a spectrum with only a single maximum, corresponding to the first peak ①.

[0042] According to the exemplary embodiment, the color coordinates of the blue light in the CIE 1931 color space chromaticity diagram (which may be referred to herein simply as the CIE 1931 color space chromaticity diagram) can be tuned by adjusting the intensity of the second peak ②. For example, the intensity of the second peak ② can be tuned during the design and / or fabrication of the LED light source module 50 by changing the type and / or amount of the tuning wavelength conversion material PT. As another tuning method, the intensity of the second peak ② can be adjusted using a light-absorbing material that selectively absorbs light of a specific wavelength (for example, as referred to in Fig. 8 is described) or controlling a mixing ratio of different wavelength conversion materials (such as with reference to Fig. 9 is described) to be adapted.

[0043] The content and / or influence of the tuning wavelength conversion material PT can be represented by an area of ​​a spectrum associated with a peak wavelength and / or with regions of spectra that have wavelengths of colors other than blue (for example, greater than 480 nm, greater than 500 nm, or greater than 520 nm). In the example of the Fig. 5. The content of the tuning wavelength conversion material PT can be described by an area obtained by integrating the spectrum between troughs V adjacent to the peak wavelength (the integral of the light intensity represented by the y-axis between two wavelengths connected to the troughs V with respect to the x-axis (wavelength)). Here, the troughs V can have a zero-intensity point (or within a predetermined limit of a zero-intensity point) as well as the lowest intensity point between peaks. Identification of the troughs can be restricted to below a certain percentage of the subpixel's peak intensity, such as below 5%, below 2%, or below 1%, for example. In the example of the Fig. 5, the area S1 corresponds to an integral of the intensity curve of the intensity of light emitted by the blue subpixel B between approximately 400 nm and approximately 490 nm, while the area S2 corresponds to an integral of the intensity curve of the intensity of light emitted by the blue subpixel B between approximately 490 nm and approximately 600 nm.

[0044] The triangles with solid lines of the Fig. 6A, Fig. 6B and Fig. Figure 6C shows the color space of the LED light source module 50 with different third subpixels B, which have different light-controlling parts 53. When a green phosphor is included as the tuning wavelength conversion material PT in the third light-controlling part 53 in such a way that the ratio S2 / S1 of a spectral area S2 of the wavelength of the second peak ② to a spectral area S1 of the wavelength of the first peak ① was approximately 12.7%, the coordinates of the blue light in the CIE 1931 color space chromaticity diagram were B0 (0.159; 0.073), as shown in Fig. Figure 6 illustrates this. However, when the area ratio S2 / S1 was reduced to approximately 6.5% (T1) (for example, by lowering the content of the tuning wavelength conversion material PT and / or adding another light-absorbing material), the coordinates of the blue light were shifted to B1 (0.157; 0.055), as shown in Fig. Figure 6 illustrates this.

[0045] In contrast, when the area ratio S2 / S1 was increased to approximately 20.3% (T2) by increasing the content of the tuning wavelength conversion material PT, the coordinates of the blue light to B2 (0.163; 0.109) were as in Fig. Figure 6C illustrates the shift. It shows that such a shift was made in an almost opposite direction to coordinates B1.

[0046] In this way, the third light-controlling part 53 according to the exemplary embodiment can provide the subpeak, that is, the second peak ②, which has a different wavelength from the main peak, and the color coordinates (for example, coordinates in the CIE 1931 color space chromaticity diagram) can be adjusted to approximate a target color coordinate by using the subpeak.

[0047] As in Fig. As illustrated in Figure 6C, the color gamut tends to decrease as the content of the tuning wavelength conversion material PT increases. This tendency can degrade the color reproduction of a light source module. Therefore, when using wavelength conversion material PT to tune the color coordinates, it may be desirable to keep the spectral area S2 of the wavelength of the second peak ② to be 20% of the spectral area S1 of the wavelength of the first peak ① or less.

[0048] In the examples described herein, if the blue subpixel B has a light-controlling part 53 with a tuning wavelength conversion material PT that converts light to a wavelength other than blue light, the light emitted by the blue subpixel B can have a z-coordinate in the CIE 1931 XYZ color space chromaticity diagram of 0.62 or greater, and can be 0.76 or greater.For example, such blue light emitted by the blue subpixel B may have a peak intensity (main peak) with a wavelength of less than 500 nm, such as between 420 nm and 480 nm, and the light of the blue subpixel B resulting from the use of the tuning wavelength conversion material PT may have a peak intensity (e.g., subpeak) with a wavelength greater than 500 nm, such as between 500 nm and 600 nm, between 520 nm and 600 nm and / or less than 550 nm (e.g., greater than 500 nm or 520 nm and less than 550 nm), or as otherwise described herein. The peak intensity (main peak) of a green subpixel G, which forms a pixel PA with such a blue subpixel B (for example, adjacent to each other as part of the same LED light source module or display field), can also have a wavelength between 500 nm and 600 nm.The relative strengths of these main peak intensities and the intensity of the subpeak, as well as the spectra of light associated with these main peaks and subpeaks, may be the same as described elsewhere herein.

[0049] As noted herein, subpixels other than a blue subpixel can incorporate a tuning wavelength conversion material, such as the red and green subpixels RG described herein. The tuning wavelength conversion material can convert the light emitted by the LED cell CA of that pixel into a color other than the color (for example, to red or blue for a green subpixel G, or to green or blue for a red subpixel R). In the examples described herein, if the green subpixel G incorporates a light-controlling part 52 with a tuning wavelength conversion material PT that converts light into a wavelength other than green light, the light emitted by the green subpixel G can have a y-coordinate of 0.65 or greater in the CIE 1931 XYZ chromaticity diagram.For example, green light emitted by the green subpixel G can have a peak intensity (main peak) with a wavelength between 500 nm and 600 nm, such as between 525 nm and 580 nm. Conversely, the light from the green subpixel G resulting from the use of the tuning wavelength conversion material PT can have a peak intensity (subpeak) with a wavelength outside the 500 nm to 600 nm range. Similarly, the light from the green subpixel G resulting from the use of the tuning wavelength conversion material PT can be blue light with a peak intensity (subpeak) with a wavelength within the 420 nm to 480 nm range.In such a case, the blue subpixel B, which forms a pixel PA with such a green subpixel G (for example, adjacent to each other as part of the same LED light source module or display field), can also have a peak intensity (main peak) with a wavelength between 420 nm and 480 nm. Alternatively, the light from the green subpixel G, resulting from the use of the tuning wavelength conversion material PT, can be red light and have a peak intensity (main peak) with a wavelength within the range of 630 nm to 780 nm. In such a case, a red subpixel R, which forms a pixel PA with such a green subpixel G (for example, adjacent to each other as part of the same LED light source module or display field), can also have a peak intensity (main peak) with a wavelength within the range of 630 nm to 780 nm.The relative strengths of these main peak intensities and the intensity of such a subpeak, as well as the spectra of light associated with these main peaks and the subpeak, may be the same as those described elsewhere herein concerning the blue subpixel B, which has the tuning wavelength conversion material.

[0050] In the examples described herein, if the red subpixel R incorporates a light-controlling part 51 with a tuning wavelength conversion material PT that converts light to a wavelength other than red light, the light emitted by the red subpixel R can have an x-coordinate in the CIE 1931 XYZ chromaticity diagram of 0.65 or greater. For example, such red light emitted by the red subpixel R can have a peak intensity corresponding to a wavelength greater than 600 nm, such as between 630 nm and 780 nm, and the light resulting from the use of the tuning wavelength conversion material can have a peak intensity corresponding to a wavelength less than 630 nm, such as between 500 nm and 600 nm.The relative strengths of these main peak intensities and the intensity of such a subpeak, as well as the spectra of light associated with these main peaks and the subpeak, may be the same as those described elsewhere herein concerning the blue subpixel B, which has the tuning wavelength conversion material.

[0051] In some examples, when an initial driver voltage is applied to LED cell C3, the blue subpixel B can emit light (for example, blue light from the LED cell and light with a different wavelength (for example, green light) after conversion of the wavelength of the blue light emitted by LED cell C3 by a tuning wavelength conversion material PT). The light emitted by the blue subpixel B can have a first peak intensity ① of blue light (for example, with wavelength(s) less than 500 nm) of M watts and a second peak intensity ② of green light (for example, with wavelength(s) between 500 nm and 600 nm) of N watts.

[0052] The first driver voltage can be a fixed or predetermined voltage, such as the maximum driver voltage or half the maximum driver voltage of a driver circuit (e.g., a display driver IC) connected to drive LED cell C3 in a display panel or other display device. M and N can be real numbers, where N is greater than 4% of M. In some examples, N can be greater than 4% but less than 8% of M. In some examples, when the first driver voltage (e.g., of the same magnitude or order of magnitude as the driver voltage applied to LED cell C3 of blue subpixel B) is applied to drive LED cell C2 of green subpixel G, light emitted by green subpixel G can have a peak green light intensity (e.g., with wavelength(s) greater than 500 nm and less than 600 nm) of L watts.L can be a real number, and N can be greater than 4% of L. In some examples, N can be greater than 4% but less than 8% of L. In some exemplary embodiments, taking into account the effect of color coordinate tuning, the second peak ② can be located in a wavelength band that has high visibility. For example, the second peak ② can be selected to be located in the range of 520 nm to 600 nm or in the range of 525 nm to 580 nm. Additionally, the difference in the wavelengths of the first peak ① and the second peak ② can be, but is not limited to, 50 nm or more or 80 nm or more. For example, if a color coordinate tuning range is narrow, the second peak ②, which has a wavelength adjacent to a wavelength of the first peak ①, can be selected.

[0053] Such a method for adjusting the color coordinates can be used as a method for correcting deviations in the color coordinates that are generated due to wavelength characteristics of LEDs. Fig. Figure 7 is a flowchart illustrating an example of a method for adjusting the color coordinates of a light source module according to an exemplary embodiment of the present inventive concept.

[0054] Referring to Fig. 7 is the intensity of light emitted by an LED cell (for example, such as an LED cell CA of the Fig. 4) is emitted, (for example by a spectrometer) measured over a continuous spectrum of wavelengths to obtain information representing the intensity versus the wavelength of the emitted light, as for example in Fig. Figure 5 shows that the LED cell may not have a light-controlling part (such as 51, 52, or 53) on it. A peak wavelength of the light emitted by an LED cell (the wavelength corresponding to the maximum intensity of the light emitted by an LED cell) is determined (S51). In this measurement process, various wavelength characteristics, such as brightness and peak wavelength, can be measured. The measurement process can be a wafer-level process, where each LED cell formed on a wafer is measured separately while still forming part of the wafer (after which they can be separated from the wafer). Alternatively, each LED cell can be measured after separation from the wafer, and its wafer placement can be tracked.In fact, even when LED cells are manufactured on the same wafer using the same process, they can exhibit different wavelength characteristics depending on their placement on the wafer or the number of processes. Such differing optical characteristics can cause variations in the color coordinates of light source modules manufactured under identical conditions (for example, the same design conditions for the wavelength conversion section). To address this problem, the inventors of the present inventive concept propose an underpeak as a base state and a method for tuning color coordinates to control the intensity of the underpeak (an area ratio of a spectrum).

[0055] Next, the measured peak wavelength is compared with a reference peak wavelength (S53). In this comparison process, a difference (Δλ) between the measured peak wavelength and the reference peak wavelength can be calculated. Here, a target peak wavelength for the LEDs, or a peak wavelength that most closely matches the peak wavelength of the majority of LED cells produced (e.g., most distributions) in an actual manufacturing process, can be set as the "reference peak wavelength." With respect to such a reference peak wavelength, design conditions for a reference light-controlling component can be predetermined to achieve the target color coordinates.

[0056] Here, "the design conditions of the reference light-controlling part" or "reference design conditions" can refer to configuration requirements of the light-controlling part for converting light with the reference peak wavelength into light with the target color coordinates. For example, the reference design conditions can include various parameters such as a type and quantity of a base wavelength conversion material, a type and quantity of a tuning wavelength conversion material, whether or not a light-absorbing material is added, the quantity of the light-absorbing material, and a mixing ratio of two or more wavelength conversion materials.Additionally, as described above, the design conditions of the reference light-controlling part can be set in such a way that if an LED subpixel were formed by combining the reference light-controlling part with an LED cell having a peak wavelength equal to the reference peak wavelength, the fitted light emitted by such an LED subpixel would have a spectrum having a first peak (a main peak) wavelength and a second peak (a subpeak) wavelength having a lower intensity than the first peak wavelength (as described elsewhere herein).

[0057] Next, it can be determined whether the design of the reference light controlling part needs to be changed or not based on the difference (Δλ) between the measured peak wavelength and the reference peak wavelength (S55).

[0058] When making such a determination, an allowable deviation (σ) can be set even if there is a difference (Δλ) between the measured peak wavelength and the reference peak wavelength. If the difference (Δλ) between the measured peak wavelength and the reference peak wavelength is within a allowable deviation (σ) (that is, |Δλ| ≤ σ), the light-controlling part to be combined with the measured LED cell can be one formed according to the design conditions of the reference light-controlling part (S57a).However, if the difference (Δλ) between the measured peak wavelength and the reference peak wavelength exceeds the permissible deviation (σ) (that is, |Δλ| > σ), the design conditions of the reference light-controlling part (which is to be combined with the measured LED cell) can be modified in such a way that the spectrum of the light associated with the underpeak is changed (for example, the intensity of the underpeak is increased or decreased) (S56), and then a light-controlling part (in particular the wavelength conversion part) can be one which is formed according to the modified design conditions (S57b) and is combined with the measured LED cell or a similarly manufactured LED cell (for example, in a manner as described herein).

[0059] Modifying the reference design condition can be implemented using various factors. A method for modifying the reference design conditions may differ depending on whether a wavelength deviation is positive or negative. For example, if the measured peak wavelength is shorter than the reference peak wavelength in a blue LED cell, the reference design conditions can be modified to increase the light intensity associated with the underpeak. For instance, at least one method may be selected from 1) increasing the amount of tuning wavelength conversion material relative to the underpeak, 2) decreasing the amount of light-absorbing material, and 3) adding another tuning wavelength conversion material (introducing a second underpeak).In contrast, if the measured peak wavelength is longer than the reference peak wavelength in the blue LED cell, the reference design conditions can be modified to attenuate the light associated with the underpeak. For example, at least one method can be selected from 1) reducing the amount of tuning wavelength conversion material relative to the underpeak and 2) adding / increasing the amount of light-absorbing material.

[0060] The light-controlling component can be formed by depositing (e.g., by spin coating or inkjet printing) a liquid light-transmitting resin (which subsequently cures) containing a tuning wavelength conversion material such as phosphor. The light-transmitting resin can also include a light-absorbing material. The amount (total amount and / or concentration) of a primary tuning wavelength conversion material (e.g., phosphor), corresponding to the subpeak, a secondary tuning wavelength conversion material, and / or a light-absorbing material can be varied depending on a) the light intensity measurements of the LED cell,on which the light-controlling part is formed and / or b) from the light intensity measurements of other LED cells on the wafer (for example, to allow measurement of only some of the LED cells) and / or light intensity measurements of LED cells on other wafers produced in the same batch (for example, every hundredth wafer of LED cells may have its LED cells measured, and such measurements may be used to determine the amount of primary and / or secondary tuning wavelength conversion materials and / or light-absorbing material of the light-controlling part formed on wafers of LED cells that will be formed in the next 99 wafers of LED cells to be produced). For the same subpixel type (for example, R,B or G) on the same wafer, the amount of primary and / or secondary tuning wavelength conversion material and / or light-absorbing material of the light-controlling part can vary depending on the placement of the light-controlling part on the wafer, such as based on measurements of other LED cells in the same relative placement within other wafers.

[0061] When the light-transmitting liquid resin is individually dispersed (for example, by an inkjet printer or inkjet printer) to form the light-controlling part, controlling the amount of any material added to the light-transmitting liquid resin (for example, primary and / or secondary tuning wavelength conversion material and / or light-absorbing material) can be achieved by controlling the total amount of light-transmitting liquid resin that has the same concentration of added material being deposited (which can be followed by further deposition of light-transmitting liquid resin without the added material) or by controlling the concentration of the added material in the light-transmitting liquid resin.

[0062] LED light source modules, which have color coordinates that are adjusted according to such various methods, are in the Fig. 8 and Fig. 9 illustrates. Fig. 8 and Fig. Figure 9 can be understood as side cross-sectional views of the LED light source modules, similar to the side cross-sectional view shown in Fig. 4 are illustrated.

[0063] A 50' LED light source module, which is in Fig. Figure 8 illustrates that it can be understood to be similar to the LED light source module 50, which is shown in Fig. 4 is illustrated, except that a light-absorbing material LA is added to a third light-controlling part 53'. Components of the LED light source module 50' according to the exemplary embodiment can be described by reference to the descriptions of components similar to or the same as those of the LED light source module 50, which is shown in the Fig. Figures 1 to 4 are illustrated and should be understood unless otherwise specified.

[0064] The light-absorbing material LA is a material that absorbs light having a second peak (the subpeak) wavelength. For example, the light-absorbing material LA can be a light-absorbing pigment or dye. When the light-absorbing material LA is added according to the exemplary embodiment, the intensity of the second peak ② can be adjusted to be reduced (T1) (please refer to Fig. 5), and the color coordinates of blue light can be moved slightly to be close to zero, similar to Fig. 6B.

[0065] An LED light source module 50", which is in Fig. Figure 9 illustrates that it can be understood to be similar to the LED light source module 50, which is shown in Fig. 4 is illustrated, except that the first to third LED cells C1, C2 and C3 are ultraviolet LEDs and emit ultraviolet light, and except for one configuration of the first to third light-controlling parts 51'', 52'' and 53''. Components of the LED light source module 50'' according to the exemplary embodiment can be described by reference to the descriptions of similar or identical components of the LED light source module 50, which is shown in the Fig. Figures 1 to 4 are illustrated and should be understood unless otherwise specified.

[0066] The first to third LED cells C1, C2, and C3 can have epitaxial layers 13', 15', and 17' that emit ultraviolet light. For example, the epitaxial layers 13', 15', and 17' can have an active layer 15' with a composition of Al x Ga 1-xN (0 < x < 1) has. The first and third light-controlling parts 51'', 52'' and 53'' can each have red, green and blue phosphors P1, P2 and P3.

[0067] The first light-controlling part 51'' can include a red phosphor P1 for converting ultraviolet light to red light and a first tuning wavelength conversion material PT1 for providing a subpeak wavelength other than the red wavelength band. For example, the first tuning wavelength conversion material PT1 can include a yellow (e.g., a wavelength in the range of 570 nm to 600 nm), a yellowish-red (e.g., a wavelength in the range of 600 nm to 630 nm), or another red wavelength conversion material other than a blue or green phosphor. As shown in Fig. As illustrated in Figure 10, red light emitted by the first light-controlling part 51'' can have a spectrum in which a first peak ⓐ is located in a red wavelength band (for example, greater than 600 nm), and a second peak ⓑ is located in a green wavelength band (for example, less than 600 nm, such as between 500 nm and 600 nm). Referring to Fig. 10. The second peak ⓑ can be used as a factor for tuning color coordinates, as it is located at approximately 540 nm and has relatively high visibility.

[0068] Although not limited thereto, in a light emission spectrum of the first light-controlling part 51'', the wavelength of the first peak ⓐ may be in the range of 610 nm to 640 nm, and the wavelength of the second peak ⓑ may be in the range of 520 nm to 600 nm or 525 nm to 580 nm. In some exemplary embodiments, the first light-controlling part 51'' may further comprise a green phosphorus, the same as the green phosphorus P2 of the second light-controlling part 52''. In this case, the green phosphorus content of the first light-controlling part 51'' may be lower than the green phosphorus P2 content of the second light-controlling part 52''.

[0069] A third light-controlling part 53'' according to the exemplary embodiment can further comprise a blue phosphor P3, which converts ultraviolet light into blue light (i.e., a main peak), and a second tuning wavelength conversion material PT2, which provides light within a visible light band (i.e., a subpeak) different from the blue light. For example, the second tuning wavelength conversion material PT2 can be a bluish-green, green, yellow, yellowish-red, or red phosphor.The light emitted by the third light-controlling part 53'' can have a light emission spectrum which has a main peak located in a blue wavelength band and a subpeak located within another band of visible light (for example, a red or green band such as a subpeak wavelength greater than 600 nm or between 500 nm or 600 nm) different from the main peak.

[0070] Even though the spectrum of light B, emitted in the third light-controlling part 53'', does not have two peaks, the profile of a section of it can be modified using the tuning wavelength conversion material PT2. As in Fig. As illustrated in Figure 11, a main peak ①' of a blue phosphor P3 can be located in the range of 440 nm to 460 nm, and a subpeak ②' of the second tuning wavelength-conversion material PT2 can have a bluish-green wavelength of approximately 480 nm, although it is different from the main peak wavelength. Under such conditions, the spectrum of the light emitted by the third light-controlling part 53'' (as B in Fig. 11), have only one main peak, unlike the spectrum of the blue subpixel, which is shown in Fig. Figure 5 illustrates this. In this way, the subpeak ②' of the light intensity, which is associated with the second tuning wavelength conversion material PT2, can change the profile of the section of the spectrum for adjusting the color coordinates.

[0071] In other words, the color coordinates of the light emitted by the third light-controlling part 53'' can be tuned in such a way that the profile of the section of the spectrum is changed by adjusting a content of the second tuning wavelength conversion material PT2.

[0072] The above-described method for tuning the color coordinates can involve adding or reducing the light-absorbing material that absorbs the light of the second peak wavelength, as well as adjusting the content of the first and second tuning wavelength conversion material PT1 and PT2, the subpeak (i.e., the second peak ②') can be reduced or increased, and the color coordinates can be effectively tuned.

[0073] According to the exemplary embodiment, unlike in the preceding embodiment, not only the blue color coordinates but also the red color coordinates can be independently adjusted during the manufacturing process of the LED light source module 50''. Additionally, the color coordinates of the second light-controlling part 52'' can also be adjusted by adding a tuning wavelength conversion material. Furthermore, similar to the first light-controlling part 51'' according to the exemplary embodiment, the red color coordinates as well as the blue color coordinates can be independently adjusted by modifying the first wavelength conversion part 51a of the light source module 50, which is located in Fig. As illustrated in section 4, voting will take place.

[0074] According to the exemplary embodiment, the first to third light-controlling parts 51'', 52'' and 53'' are illustrated to be included only with the wavelength conversion parts. However, a light filter layer can additionally be arranged on the wavelength conversion parts, similar to the first and second light-controlling parts 51 and 52, which are shown in the Fig. 4 and Fig. Figure 8 illustrates this. The light filter layer can be used not only to block ultraviolet light, but also to narrow the full width at half maximum (FWHM) of emitted light by absorbing a portion of a wavelength band of converted light.

[0075] The LED light source module according to the exemplary embodiment can be implemented to have different layouts. Such different layouts are described in the Fig. 12A and Fig. 12B and the Fig. 13A and Fig. 13B illustrates this.

[0076] First, referring to the Fig. 12A and Fig. 12B is understood to be an LED light source module 350, having a similar structure to the LED light source module 50, which is in the Fig. 1 and Fig. 2 is illustrated, except that the arrangement of the first to third LED cells C1', C2' and C3' and electrode contact points differs. Components of the LED light source module 350 according to the exemplary embodiment can be described by reference to the descriptions of similar or identical components of the LED light source module 50, which is shown in the Fig. Figures 1 to 4 are illustrated and should be understood unless otherwise specified.

[0077] As in the Fig. 12A and Fig. As illustrated in Figure 12B, the LED light source module 350, according to the exemplary embodiment of the present inventive concept, can have the first to third LED cells C1', C2' and C3', which have different arrangements. The third LED cell C3' can be arranged along the entire length of one side of the LED light source module 350, and the first and second LED cells C1' and C2' can be arranged in parallel to face a longer side of the third LED cell C3'.

[0078] The LED light source module 350, which is in Fig. As illustrated in Figure 12B, the first electrode contact point 331a, 331b and 331c can have three first electrode contact points 331a, 331b and 331c, each of which is connected to the three cells C1', C2' and C3', and a second electrode contact point 332, which is connected together to the three cells C1', C2' and C3', as in the exemplary embodiment described above.

[0079] The first three electrode contact points 331a, 331b, and 331c can each be connected to semiconductor layers of the first conductivity type of the first to third LED cells C1', C2', and C3' by three first connecting electrodes 327. The second electrode contact point 332 can be connected together with the semiconductor layers of the second conductivity type of the first to third LED cells C1', C2', and C3' by a single second connecting electrode 328. The first connecting electrodes 327 and the second connecting electrode 328 can each be connected to the semiconductor layers of the conductivity type by first and second through-holes H1 and H2, respectively.Since the three LED cells C1', C2' and C3' are arranged in accordance with the exemplary embodiment to be adjacent to each other, the second connecting electrode 328 can be formed as a common electrode to have a relatively small length compared to that of the exemplary embodiment, which is shown in . Fig. 2 illustrates having.

[0080] As in the embodiment described above, at least one of the first to third light-controlling parts 351, 352 and 353 according to the exemplary embodiment can have a tuning wavelength conversion material which provides a light which has a sub-peak wavelength different from a main peak wavelength of the matched light, as described herein.

[0081] As in the Fig. 13A and Fig. As illustrated in Figure 13B, an LED light source module 450 according to an exemplary embodiment of the present inventive concept can be understood to have a similar structure to the LED light source module 50, which is described in the Fig. 1 and Fig. 2 is illustrated, except that the LED light source module 450 has four LED cells C1'', C2'', C3'' and C4''. Components of the LED light source module 450 according to the exemplary embodiment can be described by reference to the descriptions of similar or identical components of the LED light source module 50, which is shown in the Fig. Figures 1 to 4 are illustrated and should be understood unless otherwise specified.

[0082] As in Fig. As illustrated in Figure 13B, the first to fourth LED cells C1'', C2'', C3'' and C4'' can be arranged in parallel. Additionally, the LED light source module 450 can have four first electrode contact points 431a, 431b, 431c and 431d, each connected to the four LED cells C1'', C2'', C3'' and C4'', and a second electrode contact point 432, which is connected to the four LED cells C1'', C2'', C3'' and C4''.

[0083] The four first electrode contact points 431a, 431b, 431c, and 431d can each be connected to semiconductor layers of the first conductivity type of the first to fourth LED cells C1'', C2'', C3'', and C4'' by four first connecting electrodes 427. The second electrode contact point 432 can be connected together with semiconductor layers of the second conductivity type of the first to fourth LED cells C1'', C2'', C3'', and C4'' by a single second connecting electrode 428. The first and second connecting electrodes 427 and 428 can each be connected to the semiconductor layers of the first and second conductivity types via first and second through-holes H1 and H2.Similar to the embodiment described above, at least one of the first to fourth light-controlling parts 451, 452, 453 and 454 according to the exemplary embodiment can have a tuning wavelength conversion material which provides light which has a sub-peak wavelength different from a main-peak wavelength of matched light.

[0084] Fig. Figure 14 is a CIE 1931 color space chromaticity diagram intended to illustrate a wavelength conversion material of a light source module according to an exemplary embodiment of the present inventive concept. As will be seen, the x-coordinate corresponds to red light, the y-coordinate corresponds to green light, and a z-value (not shown) corresponds to blue light, where x + y + z = 1.

[0085] Referring to Fig. 14. White light, produced by combining yellow, green, and red phosphors with a blue LED, or by combining a green LED and a red LED with a blue LED, can have two or more peak wavelengths, and the coordinates (x, y) of the white light can be placed on the line connecting (0.4476; 0.4074), (0.3484; 0.3516), (0.3101; 0.3162), (0.3128; 0.3292), (0.3333; 0.3333) in the CIE 1931 color space chromaticity diagram. Additionally, the white light can be placed in a zone enclosed by the line and spectrum of a Planckian radiator. The color temperature of the white light can range from 2000 K to 20000 K. Fig. 14. White light around the coordinates E(0.3333; 0.3333), which lie below the spectrum of Planck's radiator, can be light in which light of a yellow-based component is relatively weak, and can be used as a light source for lighting that gives a more vivid or fresher impression to the naked eye. Accordingly, lighting products that use white light around the coordinates E(0.3333; 0.3333), which lies below the spectrum of Planck's radiator, can be usefully applied to lighting fixtures for shops that sell food, clothing, and the like. A use of the pixels described herein, which feature a use of the tuning wavelength conversion material, can be employed to provide the desired white light as described above.

[0086] Various materials, such as phosphors and / or quantum dots, can be used as the material for converting a wavelength of light emitted by the LED cell according to the exemplary embodiment.

[0087] Phosphors can have the following compositional formulas and colors. * Oxide group: yellow and green Y3Al5O 12 :Ce, Tb3Al5O 12 :Ce, Lu3Al5O 12 :Ce *Silicate group: yellow and green (Ba,Sr)2SiO4:Eu, yellow and orange (Ba,Sr)3SiO5:Ce * Nitride group: green β-SiAlON:Eu, yellow La3Si6N 11 :Ce, orange α-SiAlON:Eu, red CaAlSiN3:Eu, Sr2Si5N8:Eu, SrSiAl4N7:Eu, SrLiAl3N4:Eu, Ln 4-x (eu z M 1-z ) x Si 12 - y Al y O 3+x+y N 18-x-y(0.5 ≤ x ≤ 3, 0 < z < 0.3, and 0 < y ≤ 4)(where Ln is at least one element selected from the group consisting of Group IIIa elements and a rare earth element, and M is at least one element selected from the group consisting of Ca, Ba, Sr and Mg)

[0088] *Fluoride group: KSF-based red K2SiF6:Mn4+, K2TiF6:Mn4 + , NaYF4:Mn4 + , NaGdF4:Mn4 + , K3SiF7:Mn 4+

[0089] The composition of the phosphorus can be consistent with stoichiometry, and each element can be substituted with another element within a corresponding group on the periodic table. For example, strontium (Sr) can be substituted with Ba, Ca, Mg, or the like in the alkaline earth(II) group, and yenium (Y) can be substituted with Tb, Lu, Sc, Gd, or the like in the lanthanide group. Additionally, Eu, an activator, can be substituted with Ce, Tb, Pr, Er, Yb, or the like according to a preferred energy level. The activator can be used alone, or a co-activator can be further included to modify characteristics.

[0090] In particular, any fluoride-based red phosphor can be coated with a fluoride without manganese, or a surface of the red phosphor or a surface of the fluoride without manganese can further be coated with an organic material to improve reliability in high-temperature / high-humidity environments. Unlike other phosphors, such a fluoride-based red phosphor can implement a narrow full width at half maximum (FWHM) of 40 nm or less, and therefore it can be used in a high-definition television such as a UHD TV.

[0091] Table 1 below illustrates different types of phosphors that can be used with a light-controlling part with an LED chip which has LED cells which emit blue light which has a dominant wavelength in the range of 440 nm to 460 nm, or with a UV LED chip which has LED cells which emit UV light which has a dominant wavelength in the range of 380 nm to 440 nm, listed by application. [Table 1] Zweck Phosphor LED TV BLU β-SiAlON:Eu 2+ , (Ca, Sr)AlSiN3:Eu 2+ , La3Si6N 11 :Ce 3+ ,K2SiF6:Mn4+, SrLiAl3N4:Eu, Ln 4-x (Eu z M 1-z ) x Si 12-y Al y ABOUT 3+x+y N 18-x-y (0.5≤x≤3, 0 <z<0.3, und 0<y≤4), K2TiF6:Mn 4+ , NaYF4:Mn 4+ ,NaGdF4:Mn 4+ , K3SiF7:Mn 4+ Beleuchtungsvorrichtungen Lu3Al5O 12 :What 3+ , Ca-α-SiAlON:Iu 2+ , La3Si6N 11 :What 3+ , (Ca,Sr)AlSiN3:I 2+ , Y3Al5O 12 :What 3+ , K2SiF6:Mn 4+ , SrLiAl3N4:Iu,Ln 4-x (I z M 1-7 ) x And 12 :yAl y A 3+x+y N 18-x-y (0.5≤x≤3, 0 <z<0.3, und0<y≤4), K2TiF6:Mn 4+ , NaYF4:Mn 4+ , NaGdF4:Mn 4+ , K3SiF7:Mn 4+ Seitenbetrachtung(Mobiltelefon, Laptop PCs) Lu3Al5O 12 :What 3+ , Ca-α-SiAlON:Iu 2+ , La3Si6N 11 :What 3+ , (Ca,Sr)AlSiN3:Iu 2+ , Y3Al5O 12 :What 3+ , (Sr, Ba, Ca, Mg)2SiO4:Iu 2+ ,K2SiF6:Mn 4+ , SrLiAl3N4:Iu, Ln 4-x (I z M 1-z ) x And 12-y the y A 3+x+y N 18-x-y (0.5≤x≤3, 0 <z<0.3, und 0<y≤4), K2TiF6:Mn 4+ , NaYF4:Mn 4+ ,NaGdF4:Mn 4+ , K3SiF7:Mn 4+ Electronik(Scheinwerfer, etc.) Lu3Al5O 12 :What 3+ , Ca-α-SiAlON:Iu 2+ , La3Si6N 11 :What 3+ , (Ca,Sr)AlSiN3:Iu 2+ , Y3Al5O 12 :What 3+ , K2SiF6:Mn4+, SrLiAl3N4:Eu,Ln 4-x (I z M 1-7 ) x And 12 :yAl y A 3+x+y N 18-x-y (0.5≤x≤3, 0 <z<0.3, und0<y≤4), K2TiF6:Mn 4+ , NaYF4:Mn 4+ , NaGdF4:Mn 4+ , K3SiF7:Mn 4+

[0092] The phosphorus of the wavelength conversion part can be part of a quantum dot (QD) (that is, any reference herein to the phosphorus of the wavelength conversion part of the disclosed embodiments refers to such a phosphorus alone or to quantum dots (QDs) comprising such phosphors). The quantum dot can have a core-shell structure comprising Group II-VI or Group III-V compound semiconductors. For example, the quantum dot can have a core such as CdSe or InP and a shell such as ZnS or ZnSe. Likewise, the quantum dot can include a ligand to stabilize the core and the shell. For example, the core can have a diameter ranging from approximately 1 nm to 30 nm, and preferably from approximately 3 nm to 10 nm in an exemplary embodiment.The shell can have a thickness ranging from approximately 0.1 nm to 20 nm, and preferably from approximately 0.5 nm to 2 nm in an exemplary embodiment. The quantum dots can implement different colors according to their size. The use of quantum dots can be helpful in achieving a narrow FWHM (for example, 35 nm or less) of the converted light in the light conversion section of the subpixel.

[0093] The LED light source module according to the exemplary embodiment can be usefully applied to a display field.

[0094] Fig. Figure 15 is a schematic perspective view of a display field which includes the light source module 50, which is located in Fig. 1 is illustrated, and Fig. Figure 16 illustrates an example of a circuit configuration for a pixel area PA of the display field, which is shown in Fig. 15 is illustrated.

[0095] A display field 200, which is in Fig. As illustrated in Figure 15, a circuit board 201 and a plurality of LED light source modules 50, which are arranged on the circuit board 201, can be used. The display field 200 can further include a matrix 210, which is arranged on the circuit board 201. The matrix 210 can function as a guide line, defining a mounting area for the plurality of LED light source modules 50. The matrix 210 can be a black matrix, which is both opaque and light-absorbing. Other colored matrices, such as a white matrix or a green matrix, can be used depending on the purpose or application of the products. A matrix formed from a transparent material can also be used as the matrix 210, as desired. The white matrix can furthermore be a reflective or a light-diffusing material.The matrix 210 can contain at least one material, such as a polymer containing a resin, a ceramic, a semiconductor and a metal.

[0096] Most LED light source modules 50 can provide a pixel PA which has red (R), green (G), and blue (B) subpixels. Such a pixel PA can be arranged in series. Each of the subpixels can be a combination of an LED cell and a light-controlling component as in the Fig. Figures 1 to 4 illustrate the following. According to the exemplary embodiment, the three subpixels R, G, and B can be arranged side by side in a single direction within a single pixel PA. The three subpixels R, G, and B can be arranged in various ways as required.

[0097] Such an arrangement can be modified in various ways by varying the arrangement of the LED cells in the LED light source modules 50, as shown in the exemplary embodiments described in the Fig. 12A and Fig. 12B and the Fig. 13A and Fig. Figure 13B illustrates this. Board 201 can include a circuit configured to independently drive the R, G, and B subpixels of each pixel. For example, board 201 can be a thin-film transistor (TFT) substrate containing a matrix of TFTs, each TFT being activated by a row line connected to its gate to selectively provide a voltage from a data line (for example, connected to a first source / drain of the TFT) to a pixel PA (to which a second source / drain of the TFT is connected).

[0098] Fig. Figure 16 illustrates an example of a circuit configuration for a pixel area PA of the display field 200, which is shown in Fig. Figure 15 illustrates this. Here, R, G, and B can be understood as each LED cell, which is a subpixel of the LED light source module 50 in Fig. 14 configured.

[0099] Each LED R, G, and B, which configures the subpixel, can have different configurations for a circuit connection to operate independently. For example, as shown in Fig. As illustrated in Figure 16, a positive electrode P0 of pixel PA, which has LED subpixels R, G, and B, is connected to a drain of a P-MOSFET (not shown). The positive electrode P0 can be the second connection electrode 28, which is connected to a second electrode contact point 32, as described herein. For example, a plurality of pixels PA can be connected to the same row line in this manner via other corresponding P-MOSFETs, and a plurality of row lines can be arranged side by side in a column direction, having similar connections to other P-MOSFET transistors and pixels PA. Each of the negative electrodes N1, N2, and N3 of the LED subpixels R, G, and B can have a corresponding current input terminal, which is connected to a different column line (which, for example, extends across the pixel array in a direction perpendicular to the row lines).Each of the negative electrodes N1, N2, and N3 can be a different first junction electrode 27, each connected to a different electrode contact point 31a, 31b, and 31c (as described herein) acting as a current input terminal of the subpixel, which in turn is connected to a different column line. In some examples, each of the current input terminals can have a constant current input terminal to accept a constant current from an LED driver circuit. A source of the P-MOSFET can be connected to a power supply terminal providing a constant positive voltage, and a gate of the P-MOSFET can be connected to a control input of a row power supply (for example, a row line as described herein).A controller can selectively switch on a P-MOSFET by providing a suitable positive gate voltage to the P-MOSFET (via the control input) to supply power to the positive electrodes R, G, and B of each pixel in the row. Simultaneously, a constant current control signal output from the controller can control a corresponding LED driver circuit connected to a column line to ensure that a selected constant current is applied to each column line. Consequently, the LED receiving the power can be switched on.

[0100] Although the exemplary LED light source module described above is formed from multiple pixels PA mounted on a circuit board, with each pixel PA (including a plurality of subpixels) being formed as a single semiconductor chip encapsulated in a single chip-scale package (CSP) and mounted on a circuit board, alternatively each single semiconductor chip can have a plurality of pixels PA (each pixel PA having multiple subpixels such as R, G, B, as described herein) or an independent LED chip can be used for each subpixel, which is then mounted on a circuit board (please refer to the Fig. 17 and Fig. 18).

[0101] Fig. Figure 17 is a schematic perspective view of a display field according to an exemplary embodiment of the present inventive concept.

[0102] A 200' display field, which is in Fig. As illustrated in Figure 17, a circuit board 201' can have a plurality of LED chips C arranged on the circuit board 201'. The display field 200' can have a matrix 210' (for example, a black matrix, a white matrix, a colored matrix, or a transparent matrix) arranged on the circuit board 201'. Although not limited to this, the matrix 210' can be formed upstream on the circuit board 201' to serve as a guide for precisely positioning the LED chips C during an assembly process. Additionally, the matrix 210' can be a black matrix and act to prevent light leakage from the LED chips C, which form subpixels R, G, and B, and can have a metal compound such as CrO or a metal such as Cr.

[0103] Fig. 18 is a side cross-sectional view, taken along line III-III' of a pixel area of ​​the display field, which is in Fig. Figure 17 illustrates this. Here, the LED chips C, which are in Fig. 17 are illustrated, each forming only a single subpixel R, G or B and can have a similar structure to (e.g., same material layers) the LED cells C1, C2 and C3 and be configured with one of each of light-controlling parts 51, 52 and 53 as described above.

[0104] Referring to Fig. 18 the first to third LED cell C1, C2 and C3 can be mounted on the circuit board 201', and first and second electrodes 117 and 118 can each be connected to first and second connection contact points 207 and 208.

[0105] The LED cells C1, C2, and C3, which are mounted on the circuit board 201', can have a light-transmitting substrate 111 and a semiconductor laminate 115 arranged on the light-transmitting substrate 111. The first to third LED cells C1, C2, and C3 can have the same structure as the LED chip which is described in Fig. 19A is illustrated, or they can have the structure like the LED chip which is in Fig. 19B is illustrated.

[0106] A first to third light-controlling part 151, 152 and 153 of the first to third LED cell C1, C2 and C3 can configure a plurality of subpixels, which have R, G and B, together with the light-transmitting substrate 111 and the semiconductor laminate 115.

[0107] If the first to third LED cells C1, C2, and C3 emit blue light, the first and second light-controlling parts 151 and 152 can comprise first and second wavelength conversion parts 151a and 152a, respectively, each comprising red and green phosphors P1 and P2. The first and second light-controlling parts 151 and 152 can comprise the same materials as the light-controlling parts 51 and 52 described elsewhere herein. The first and second light-controlling parts 151 and 152 can further comprise light-filter layers 151b and 152b (light filters), each arranged on a first and a second wavelength conversion part 151a and 152a, respectively, and selectively blocking blue light.

[0108] The third light-controlling part 153 according to the exemplary embodiment can comprise a tuning wavelength conversion material PT. The third light-controlling part 153 can comprise the same materials as the light-controlling part 53 described elsewhere herein. The tuning wavelength conversion material PT can be a phosphor that provides light of a different color than blue light. For example, the tuning wavelength conversion material PT can be a red or a green phosphor.

[0109] According to the exemplary embodiment, three subpixels R, G and B are arranged side by side in one direction within the pixel area, which is in Fig. The arrangement of subpixels R, G, and B is illustrated in Figure 18, but is not limited to this. The subpixels can be arranged in various ways as needed. For example, the subpixels R, G, and B can be arranged at the respective vertices of a triangle. Although twelve subpixels R, G, and B (that is, four pixels) are illustrated arranged in both a vertical and a horizontal direction for the convenience of description, the number of pixels to be arranged may depend on a required resolution (for example, 1024×768). Board 201' may include a circuit configured to operate the subpixels R, G, and B of each pixel independently (please refer to Figure 18). Fig. 16).

[0110] The first, second, and third light-controlling parts 151, 152, and 153 can be formed on a respective LED cell when such an LED cell is manufactured and be part of a wafer containing a plurality of LED cells (for example, as described herein). Alternatively, each of the first, second, and third light-controlling parts 151, 152, and 153 can be formed on a respective LED cell of the display array after the LED cells have been mounted on the board 201'. In particular, during the assembly of the display array, the first to third LED cells can be mounted on the board 201' and operated via the board 201' wiring (as, for example, with respect to the Fig. 15 and Fig. 16) to emit light. Such light can be measured and used to determine the contents (for example, the amount of tuning wavelength conversion material PT, an amount of light-absorbing material LA, and / or an amount of a primary tuning wavelength conversion material) of one or more of the first, second, and third light-controlling parts 151, 152, and 153 (for example, as described herein with respect to light-controlling parts 51, 52, and 53). A liquid resin with such a determined content can then be deposited within a cavity formed by the matrix 210' over the appropriate LED cell C1, C2, or C3. In addition to the LED chips of the exemplary embodiments described above, LED chips according to exemplary embodiments can have various structures. Fig. 19A and Fig. Figure 19B shows cross-sectional views illustrating LED chips having different structures according to exemplary embodiments of the present inventive concept.

[0111] An LED chip 120, which is in Fig. Figure 19A illustrates a light-transmitting substrate 121 and a semiconductor laminate 125 arranged on the light-transmitting substrate 121.

[0112] The light-transmitting substrate 121 can be an insulating substrate such as sapphire, but is not limited to this. The light-transmitting substrate 121 can be a conductive or semiconducting substrate, which ensures light-transmitting properties, unlike the insulating substrate. A surface irregularity D can be formed on an upper surface of the light-transmitting substrate 121. The surface irregularity D can increase light extraction efficiency and can improve the quality of a single crystal grown on the light-transmitting substrate 121.

[0113] The semiconductor laminate 125 can comprise a semiconductor layer 125a of a first conductivity type, an active layer 125b, and a semiconductor layer 125c of a second conductivity type. A buffer layer 122 can be arranged between the light-transmitting substrate and the semiconductor layer 125a of the first conductivity type.

[0114] The buffer layer 122 can be used in x Al y Ga 1-x-y N (0 ≤ x ≤ 1 and 0 ≤ y ≤ 1). For example, buffer layer 122 can consist of GaN, Aln, AlGaN, or InGaN. As necessary, buffer layer 122 can be formed by combining a plurality of layers or by stepwise changing their compositions.

[0115] The semiconductor layer 125a of the first conductivity type can be a nitride semiconductor layer, which has an n-type composition. x Al y Ga 1-x-yN (0 ≤ x < 1 and 0 ≤ y < 1 and 0 ≤ x + y < 1) is satisfied, and n-type defects therein can be Si. For example, the semiconductor layer 125a of the first conductivity type can be n-type GaN. The semiconductor layer 125c of the second conductivity type can be a nitride semiconductor layer, which has a p-type composition In x Al y Ga 1-x-yN (0 ≤ x < 1, 0 ≤ y < 1 and 0 ≤ x + y < 1) is satisfied, and p-type defects thereof can be Mg. For example, the semiconductor layer 125c of the second conductivity type can be implemented as a single-layer structure, but as in the exemplary embodiment, it can have a multilayer structure with different compositions. The active layer 125b can have a multiple quantum well (MQW) structure in which quantum well layers and quantum barrier layers are stacked alternately. For example, the quantum well layers and the quantum barrier layers can each have different compositions of In x Al y Ga 1-x-y N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and 0 ≤ x + y ≤ 1). In some exemplary embodiments, the quantum well layers can have a composition of In x Ga 1-xThe quantum barrier layers can be GaN or AlGaN. The active layer 125b is not restricted to the MQW structure and can have a single quantum well (SQW) structure.

[0116] A first electrode 127 and a second electrode 128 can each be arranged on a mesa-etched region of the semiconductor layer 125a of the first conductivity type and the semiconductor layer 125c of the second conductivity type, respectively, to be positioned on the same side (a first surface). For example, the first electrode 127 can contain at least one of Al, Au, Cr, Ni, Ti, and Sn. The second electrode 128 can be formed from a reflective material. For example, the second electrode 128 can be a material such as Ag, Ni, Al, Cr, Rh, Pd, Ir, Ru, Mg, Zn, Pt, or Au and can have a single-layer or two-layer or more-layer structure.

[0117] An LED chip 130, which is in Fig. As illustrated in Figure 19B, a semiconductor laminate 135 can be arranged on the surface of a light-transmitting substrate 131. The semiconductor laminate 135 can comprise a semiconductor layer 135a of the first conductivity type, an active layer 135b, and a semiconductor layer 135c of the second conductivity type.

[0118] The LED chip 130 can have a first electrode 137 and a second electrode 138, each connected to the semiconductor layer 135a of the first conductivity type and the semiconductor layer 135c of the second conductivity type, respectively. The first electrode 137 can have a connecting electrode 137a, such as conductive vias, which extend through the semiconductor layer 135c of the second conductivity type and the active layer 135b to connect to the semiconductor layer 135a of the first conductivity type and to a first electrode contact point 137b, which is connected to the connecting electrode 137a.

[0119] The connecting electrode 137a can be surrounded by an insulating layer 133 to be electrically isolated from the active layer 135b and the semiconductor layer 135c of the second conductivity type. The connecting electrode 137a can be arranged on a surface on which the semiconductor laminate 135 is etched. The connecting electrode 137a can be appropriately designed with respect to a number, shape, spacing, or contact area with the semiconductor layer 135a of the first conductivity type to reduce contact resistance. Additionally, the connecting electrode 137a can be arranged to form rows and columns on the semiconductor laminate 135 to improve current flow.The second electrode 138 can have an ohmic contact layer 138a, which is arranged on the semiconductor layer 135c of the second conductivity type, and a second electrode contact point 138b, which is arranged on the semiconductor layer 135c of the second conductivity type.

[0120] The connecting electrode 137a and the ohmic contact layer 138a can comprise a conductive material having a single-layer or multi-layer structure to form ohmic contacts with the semiconductor layers 135a and 135b of the first and second conductivity types, respectively. For example, the connecting electrode 137a and the ohmic contact layer 138a can be formed using a process of deposition or sputtering of at least one material such as Ag, Al, Ni, Cr, or a transparent conductive oxide (TCO). The first and second electrode contact points 137b and 138b can each be connected to the connecting electrode 137a and the ohmic contact layer 138a to function as external terminals of the LED chip 130.For example, the first and second electrode contact points 137b and 138b can comprise Au, Ag, Al, Ti, W, Cu, Sn, Ni, Pt, Cr, NiSn, TiW, AuSn, or a eutectic metal thereof. The insulating layer 133 can, for example, comprise silicon oxide and silicon nitride such as SiO2, SiO. x N y and you x N y exhibit. The insulating layer 133 can be formed by distributing light-reflecting filler materials in a light-transmitting material, or by introducing a DBR structure to ensure a high level of reflectivity.

[0121] Fig. Figure 20 is a block diagram illustrating a configuration of a display device according to an exemplary embodiment of the present inventive concept.

[0122] Referring to Fig. The display field can show 200 or 200', which is located in the Fig. 15 and Fig. Figure 17 illustrates that the display device is part of a display device together with a field driver circuit 220 and a controller 250. Here, the display device can be implemented as a display for various electronic devices such as a TV, an electronic scoreboard, an electronic spreadsheet, a large format display (LFD), a smartphone, a tablet PC, a desktop PC, a laptop PC, or the like.

[0123] The field driver circuit 220 can drive the display field 200 or 200', and the controller 250 can control the field driver circuit 220. The field driver circuit 220, which is controlled by the controller 250, can have one or more semiconductor chips (for example, display driver chips) which have control inputs to receive control information from the controller and which have outputs which provide voltages (in response to the control information) to independently switch each of the plurality of subpixels, which are red (R), green (G), and blue (B), on or off.

[0124] For example, the field driver circuit 220 can transmit a clock signal, which has a specific drive frequency, to each of the plurality of subpixels in order to switch each of the plurality of subpixels on or off. The controller 250 can control the field driver circuit 220 to switch on the plurality of subpixels in groups (for example, predetermined groups which are sequentially activated and driven over a frame of a video image, such as line by line of subpixels or line by line of pixels) in response to an input image signal, thereby displaying a required image on the display field 200 or 200'.

[0125] Fig. Figure 21 is a perspective view of a flat lighting device in which a light source module can be used according to an exemplary embodiment of the present inventive concept.

[0126] Referring to Fig. 21 A flat lighting device 1000 can comprise a light source module 1010, a power supply 1020, and a housing 1030. According to the exemplary embodiment, the light source module 1010 can be one of the LED light source modules according to the exemplary embodiments described above. The power supply 1020 can comprise a light source module driver.

[0127] The light source module 1010 can have an overall flat shape. According to an exemplary embodiment, the light source module 1010 can comprise a plurality of light-emitting semiconductor devices and a controller which stores driver information for the light-emitting semiconductor devices.

[0128] The power supply 1020 can be configured to supply power to the light source module 1010. The housing 1030 can have a compartment to accommodate both the light source module 1010 and the power supply module 1020. The housing 1030 can be hexagonal with one open side, but is not limited to this shape. The light source module 1010 can be positioned to emit light toward the open side of the housing 1030.

[0129] Fig. Figure 22 illustrates an indoor lighting control network system in which a light source module can be used according to an exemplary embodiment of the present inventive concept.

[0130] A Network System 2000 according to an exemplary embodiment can be a complex intelligent (smart) lighting network system in which a lighting technology using a light-emitting semiconductor device, such as an LED, is combined with Internet of Things (IoT) technology, wireless communication technologies, and the like. The Network System 2000 can be implemented using a variety of lighting devices and wired / wireless communication devices and can be realized by a sensor, a controller, a communication device, software for network control and management, and the like.

[0131] The Network System 2000 can be used in open spaces such as parks or streets, as well as in enclosed spaces within buildings, such as apartments or offices. The Network System 2000 can be implemented within an IoT environment to collect and process various types of information and make this information available to a user. In this case, an LED lamp 2200, which is part of the Network System 2000, can contain the light source module that is integrated into the system. Fig. Figure 1 illustrates this. The LED lamp 2200 can not only control its illumination by receiving information about its environment from a gateway 2100, but also check and control the operating states of other devices 2300 to 2800 belonging to the IoT environment, based on a function of the LED lamp 2200, such as visible light communication.

[0132] Referring to Fig. 22. The network system 2000 can include the gateway 2100, which processes data transmitted and received via various communication protocols; the LED lamp 2200, which is connected to the gateway 2100 for communication and has an LED as its light source; and the plurality of devices 2300 to 2800, which are connected to the gateway 2100 for communication according to various wireless communication schemes. To implement the network system 2000 in an IoT environment, the LED lamp 2200 and the respective devices 2300 to 2800 can each have at least one communication module. In some exemplary embodiments, the LED lamp 2200 can be connected to the gateway 2100 for communication via wireless communication protocols such as Wi-Fi, Zigbee®, and Light-Fidelity (LiFi).In this respect, the LED lamp 2200 can have at least one lamp communication module 2210, and for this purpose the LED lamp 2200 can have at least one lamp communication module 2210.

[0133] As described above, the Network System 2000 can be used in an open space such as a park or street, as well as in an enclosed space within a building, such as an apartment or office. When the Network System 2000 is used in an apartment, the majority of devices 2300 to 2800 belonging to the Network System 2000 and connected to the Gateway 2100 for communication based on IoT technology can include household appliances 2300, a digital door lock 2400, a garage door lock 2500, a light switch 2600 installed on a wall or similar, a router 2700 for a wireless network intermediary, and a mobile device 2800 such as a smartphone, tablet, or laptop.

[0134] In the Network System 2000, the LED Lamp 2200 can monitor the operating status of various devices 2300 to 2800 or automatically adjust its own brightness according to surrounding environments / conditions using a wireless communication network (such as Zigbee®, Wi-Fi, or Li-Fi) installed in a home. Additionally, the LED Lamp 2200 can control devices 2300 to 2800 belonging to the Network System 2000 using Li-Fi communication via visible light emitted by the LED Lamp 2200.

[0135] First, the LED lamp 2200 can automatically control its intensity based on environmental information transmitted by the gateway 210 via the lamp communication module 2210, or information about conditions collected by a sensor installed in the LED lamp 2200. For example, the brightness of the LED lamp 2200 can be automatically controlled according to the type of program broadcast on a television 2300 or the brightness of a screen. In this respect, the LED lamp 2200 can receive operating information from the television 2310 via the lamp communication module 2210, which is connected to the gateway 2100. The lamp communication module 2210 can be modularized with an integral sensor and / or a controller contained within the LED lamp 2200.

[0136] For example, if a program being broadcast to the 2310 television is a drama, the color temperature of the 2200 LED lamp can be reduced to 12000 K or less (e.g., 6000 K) according to a preset value, and the hues of the 2200 LED lamp can be adjusted to create a pleasant atmosphere. Conversely, if the program is a comedy, the 2000 network system can be configured to increase the color temperature of the 2200 LED lamp to 6000 K or more according to a preset value and adjust the 2200 LED lamp to emit blue-based white light.

[0137] Additionally, if a certain period of time has elapsed after the digital door lock 2400 has been locked while no one is home, all switched-on LED lamps 2200 can be switched off to prevent energy waste. Furthermore, if the digital door lock 2400 is locked while no one is home after a security mode has been set by the mobile device 2800, the LED lamp 2200 can remain switched on.

[0138] The LED lamp 2200 can also be controlled according to information about circumstances gathered by various types of sensors connected to the Network System 2000. For example, if the Network System 2000 is implemented in a building, a light, a location sensor, and a communication module can be combined to switch the light on or off by collecting information about the location of people in the building. Alternatively, the collected information can be provided in real time to enable building management or the efficient use of vacant spaces.Normally, since a lighting device such as the LED lamp 2200 can be placed in every room on every floor in a building, a variety of information can be collected by the sensor which is integrally provided with the LED lamp 2200, and the collected information can be used in building management or the use of vacant rooms.

[0139] Meanwhile, the LED lamp 2200 can be combined with an image sensor, a storage device, the lamp communication module 2210, or similar components to be used as a device for maintaining building security or detecting and responding to emergencies. For example, if a smoke or temperature sensor is attached to the LED lamp 2200, a fire can be detected quickly to minimize damage. Furthermore, the brightness of the lighting can be controlled based on external weather conditions or sunlight to save energy and provide a comfortable lighting environment.

[0140] Fig. Figure 23 illustrates an open network system in which a light source module can be used according to an exemplary embodiment of the present inventive concept.

[0141] Referring to Fig. 23 A network system 2000' according to an exemplary embodiment may include a communication link device 2100', a plurality of lighting devices 2200' and 2300' which are installed at predetermined distances and connected to the communication link device 2100' in order to communicate with it, a server 2400', a computer 2500' which manages the server 2400', a communication base station 2600', a communication network 2700' which connects the above-mentioned communicable devices, a mobile device 2800' and the like.

[0142] The majority of lighting devices 2200' and 2300', which are installed in an external open space such as a street or a park, can each be equipped with Smartengines 2210' and 2310', together with the light source module which is in Fig.As illustrated in Figure 1, each of the Smartengines 2210' and 2310' can include a sensor that gathers information about the environment, a communication module, and the like, in addition to a light-emitting semiconductor device that emits light and a driver that drives the light-emitting semiconductor device. The communication module allows the Smartengines 2210' and 2310' to communicate with other environmental devices via communication protocols such as Wi-Fi, Zigbee®, and Li-Fi.

[0143] For example, a Smartengine 2210' can be connected to another Smartengine 2310' to communicate with it. In this case, a Wi-Fi extension technology (Wi-Fi Mesh) can be used for two-way communication between the Smartengines 2210' and 2310'. At least one Smartengine 2210' can be connected to the communication link device 2100', which is connected to the communication network 2700' via wired / wireless communication. To increase communication efficiency, several Smartengines 2210' and 2310' can be grouped together and connected to a single communication link device 2100'.

[0144] The communication link device 2100' can be an access point (AP) enabling wired / wireless communication and can mediate communications between the communication network 2700' and other devices. The communication link device 2100' can be connected to the communication network 2700' by at least one of the wired and wireless methods. For example, the communication link device 2100' can be mechanically integrated into one of the lighting devices 2200' and 2300'.

[0145] The communication link device 2100' can be connected to the mobile device 2800' via a communication protocol such as Wi-Fi. A user of the mobile device 2800 can receive environmental information collected by the majority of Smartengines 2210' and 2310' using the communication link device 2100', which is connected to the Smartengine 2210' of the lighting device 2200'. The environmental information may include nearby traffic information, weather information, or the like. The mobile device 2800' can be connected to the communication network 2700' via the communication base station 2600' using a wireless cellular communication system such as 3G or 4G.

[0146] Meanwhile, server 2400', which is connected to the communication network 2700', can monitor the operating states or similar information of the respective lighting fixtures 2200' and 2300' while receiving information collected by the smart engines 2210' and 2310', which are mounted in the lighting fixtures 2200' and 2300', respectively. To manage the respective lighting fixtures 2200' and 2300' based on the monitoring results of their operating states, server 2400' can be connected to computer 2500', which provides a management system. The computer 2500' can execute software or the like which is capable of monitoring and managing the operating states of the respective lighting devices 2200' and 2300', in particular the Smartengines 2210' and 2310'.

[0147] As explained above, according to the exemplary embodiments described herein, the color coordinates of each color source (for example, red, green, and blue) of a light source module can be effectively adjusted by providing, for example, a subpeak of a second wavelength in addition to a main peak of a first wavelength and by increasing or decreasing the intensity of the subpeak.

Claims

[1] Semiconductor device comprising: a first pixel (PA) which has a blue subpixel (B), a green subpixel (G) and a red subpixel (R) which are placed adjacent to each other, wherein the red subpixel (R) has a first light-emitting diode (C1; C1'; C1'') and a first transparent material which is embedded with a first phosphor (P1) on the first light-emitting diode (C1; C1'; C1'') to emit a first light from the red subpixel (R), wherein the first light is red light which has a peak intensity at a wavelength of 600 nm or more, wherein the green subpixel (G) has a second light-emitting diode (C2; C2'; C2'') and a second transparent material which is embedded with a second phosphor (P2) on the second light-emitting diode (C2; C2'; C2'') to emit a second light from the green subpixel (G), wherein the second light is green light which has a peak intensity at a wavelength between 500 nm and 600 nm, and the blue subpixel (B) comprises a third light-emitting diode (C3; C3'; C3'') and a third transparent material which is embedded with a third phosphor (PT) and a light-absorbing material (LA) on the third light-emitting diode (C3; C3'; C3'') to emit third light from the blue subpixel (B), wherein the third light is blue light and wherein a spectrum of the third light emitted by the blue subpixel (B) has only two peaks consisting of a first peak (①) with a primary peak intensity and a second peak (②) with a secondary peak intensity, wherein the primary peak intensity is greater than the secondary peak intensity, and wherein the light-absorbing material (LA) reduces the intensity of the second peak (②). [2] Semiconductor device according to claim 1, where an integral of a first graph representing the intensity of the third light with respect to a wavelength between first and second local valleys of the first graph on each side of and adjacent to the primary peak intensity is equal to S1, where an integral of the first graph, representing the intensity of the third light with respect to a wavelength between the third and fourth local valleys of the first graph on each side of and adjacent to the secondary peak intensity, is equal to S2, where S2 is less than or equal to 20.3% of S1. [3] Semiconductor device according to claim 2, wherein S2 is less than or equal to 16.5% of S1. [4] Semiconductor device according to claim 2, wherein S2 is less than or equal to 12.7% of S1. [5] Semiconductor device according to any one of claims 2 to 4, wherein the second local valley and the third local valley are the same valley. [6] Semiconductor device according to any one of claims 1 to 5, wherein the z-coordinate of the third light in the CIE 1931 XYZ color space chromaticity diagram is 0.76 or greater. [7] Semiconductor device according to any one of claims 1 to 5, wherein the z-coordinate of the third light in the CIE 1931 XYZ color space chromaticity diagram is 0.62 or greater. [8] Semiconductor device according to any one of claims 1 to 7, wherein the secondary peak intensity of the third light has a wavelength of less than 550 nm. [9] Semiconductor device according to any one of claims 1 to 8, where the peak intensity of the red light of the first light has a wavelength in the range of 630 to 780 nm, wherein the peak intensity of the green light of the second light has a wavelength in the range of 525 to 580 nm, and where the primary peak intensity of the blue light of the third light has a wavelength in the range of 440 to 460 nm. [10] Semiconductor device according to any one of claims 1 to 9, wherein the wavelengths of the peak intensity of the second light and the secondary peak intensity of the second green light of the third light are the same. [11] Semiconductor device according to claim 1, wherein the first phosphorus (P1) is a red phosphorus, the second phosphorus (P2) is a first green phosphorus, the third phosphorus (PT; PT2) is a second green phosphorus. [12] Semiconductor device according to claim 11, wherein the first green phosphorus and the second green phosphorus are the same phosphorus. [13] Semiconductor device according to claim 12, wherein the first green phosphorus and the second green phosphorus comprise β-SiAlON:Eu. [14] Semiconductor device according to claim 1, wherein the red subpixel (R), the green subpixel (G) and the blue subpixel (B) are all formed on the same semiconductor chip. [15] Semiconductor device according to claim 14, wherein each of the red subpixel (R), the green subpixel (G) and the blue subpixel (B) has a semiconductor layer (13; 13') of a first conductivity type; a semiconductor layer (17; 17') of a second conductivity type and an active layer (15; 15') which is arranged intermediately between the semiconductor layer (13; 13') of the first conductivity type and the semiconductor layer (15; 15') of the second conductivity type, wherein the semiconductor device has a wiring (28; 328; 428) which electrically connects the semiconductor layer (17; 17') of the second conductivity type of the red subpixel (R), the green subpixel (G) and the blue subpixel (B). [16] Semiconductor device according to claim 15, further comprising a first, a second and a third electrode contact point (31a, 31b, 31c; 331a, 331b, 331c; 431a, 431b, 431c), each of which is electrically connected to a respective one of the semiconductor layer (13; 13') of the first conductivity type of the red subpixel (R), the green subpixel (G) and the blue subpixel (B), wherein the first, second and third electrode contact point (31a, 31b, 31c) are not electrically connected to each other. [17] Semiconductor device according to any one of claims 1 to 16, wherein the first, second and third light-emitting diodes (C1, C2, C3; C1', C2', C3'; C1'', C2'', C3'') are each configured to produce light which has a first wavelength, and wherein the first and second phosphors (P1, P2) are each positioned to absorb the light which has the first wavelength and to emit light which does not have the wavelength of the absorbed light. [18] Semiconductor device according to any one of claims 1 to 16, wherein the red subpixel (R) has a first transparent filter layer (51b) to selectively block blue light and transmit the first light. [19] Semiconductor device according to any one of claims 1 to 18, wherein the green subpixel (G) has a second transparent filter layer (52b) to selectively block blue light and transmit the second light, and where the blue subpixel (B) has no transparent filter layer. [20] Semiconductor device according to any one of claims 1 to 19, wherein at least one of the first phosphorus (P1), the second phosphorus (P2) and the third phosphorus (PT) is formed as part of a plurality of quantum dots. [21] Semiconductor device according to claim 1, wherein the blue subpixel (B) is configured to emit the third light upon receiving a fixed driver voltage, which has a primary peak intensity of blue light of M watts and a secondary peak intensity of the second green light of N watts, where M and N are real numbers, and where N is greater than 4% but less than 8% of M.

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