ORGANIC LIGHT-EMPLOYING INDICATORS

Abstract

Organic light-emitting display device (100), comprising: a substrate (101) with a plurality of pixel areas (R-SP, G-SP, B-SP, W-SP); a light-absorbing material layer (200) in a white pixel area (W-SP) of the plurality of pixel areas (R-SP, G-SP, B-SP, W-SP) and comprising a light-absorbing dye (210); a coating layer (108) on the light-absorbing material layer (200); a microlens structure (117) on an upper surface of the coating layer (108); and an emitting diode (E) on the microlens structure (117), wherein the light-absorbing dye (210) has a main absorption wavelength range of approximately 500 to 640 nm, wherein the light-absorbing material layer (200) in an emission region (EA) of each white pixel region (W-SP) has a plurality of light-absorbing material structures spaced apart from each other.

Description

BACKGROUND OF THE INVENTION Area of ​​the invention

[0001] Embodiments of the invention relate to an organic light-emitting display device and, in particular, to an organic light-emitting display device with improved light extraction efficiency and improved color temperature. Discussion of related technology

[0002] As information technology and mobile communication technology were developed, a display device capable of displaying a visual image was also developed.

[0003] Flat panel display devices, such as liquid crystal display (LCD) devices, plasma display panel (PDP) devices, field emission display (FED) devices, electroluminescent display (ELD) devices, organic light-emitting display (OLED) devices, etc., are developed and used instead of a cathode ray tube due to advantages in weight, power consumption, and the like.

[0004] Examples of flat panel display devices can be found, among others, in the following publications: US 2016 / 0 087 247 A1, US 2017 / 0 125 489 A1, US 2006 / 0 197 458 A1, KR 10 2015 060 200 A, US 2016 / 0 120 004 A1.

[0005] Of the flat panel display devices, the OLED device, as a self-emissive design, offers excellent characteristics of a thin profile and low weight, without requiring a backlight unit like an LCD device. Furthermore, the OLED display device offers advantages in terms of viewing angle, contrast ratio, low power consumption, low-voltage drive, and fast response time. Since the OLED device also incorporates solid components, it offers advantages in terms of external impact resistance and operating temperature range.

[0006] Since the manufacturing process of the OLED device is very simple, the OLED device has a major advantage in terms of production costs.

[0007] In an OLED device, light loss occurs as the light emitted by the organic emissive layer passes through various components within the device. For example, the light extraction from the organic emissive layer can be approximately 20%.

[0008] Since the amount of light extracted is proportional to the current applied to an organic light-emitting diode (OLED), the brightness of the OLED device can be increased by increasing the current to the OLED. However, this results in high power consumption and a short lifespan.

[0009] To improve the light extraction from the OLED device, a microlens array (MLA) can be placed on a substrate of the OLED device, or a microlens can be formed in a coating layer of the OLED device.

[0010] However, the color temperature of the OLED device can be reduced by the MLA or the microlens. Furthermore, the reflection ratio is increased by the MLA or the microlens, thus reducing the visual sensitivity to the color black. SUMMARY OF THE INVENTION

[0011] Accordingly, embodiments of the invention are directed towards an OLED device which essentially avoids one or more of the problems due to limitations and disadvantages of the related technology and has other advantages.

[0012] Further features and advantages of the invention are set forth in the following description and are partly evident from the description or can be learned through the implementation of the invention. The objectives and other advantages of the invention are realized and achieved through the structure, which is set forth in particular in the written description and the claims, as well as in the accompanying drawings. Various embodiments provide an organic light-emitting display device according to claim 1 and an organic light-emitting display device according to claim 17. Further embodiments are described in the dependent claims.

[0013] Embodiments relate to an organic light-emitting display device comprising a substrate with a plurality of pixel areas, a light-absorbing material layer arranged in a white pixel area of ​​the plurality of pixel areas and comprising a light-absorbing dye, a coating layer on the light-absorbing material layer, a microlens structure on an upper surface of the coating layer, and an emitting diode on the microlens structure, wherein the light-absorbing dye has a principal absorption wavelength of about 500 to 640 nm.

[0014] In one or more embodiments, an area of ​​the light-absorbing material layer covers approximately 40% of an area of ​​an emission region of the white pixel area.

[0015] In one or more embodiments, the light-absorbing dye comprises one or more tetra-aza-porphyrin (TAP), rhodamine, squalene and cyanine (CY)-based materials.

[0016] In one or more embodiments, the light-absorbing material layer is transparent or white.

[0017] In one or more embodiments, the organic light-emitting display device further comprises a blue color filter structure on one side of the light-absorbing material layer.

[0018] In one or more embodiments, the organic light-emitting display device further comprises a bank at a boundary of the white pixel area, wherein the blue color filter structure overlaps the bank.

[0019] In one or more embodiments, the organic light-emitting display device further comprises a metal conductor at a boundary of the white pixel area, wherein the blue color filter structure overlaps the metal conductor.

[0020] In one or more embodiments, the coating layer has a refractive index of approximately 1.5.

[0021] In one or more embodiments, the coating layer comprises at least one of an acrylic-based resin, a phenol-based resin, a polyamide-based resin, a polyimide-based resin, an unsaturated polyester-based resin, a polyphenylene-based resin, a polyphenylene sulfide-based resin, a benzocyclobutene-based resin and a photoresist.

[0022] In one or more embodiments, the plurality of pixel areas further comprises a red pixel area, a green pixel area and a blue pixel area, and a red color filter, a green color filter and a blue color filter are arranged in the red, green and blue pixel areas respectively.

[0023] In one or more embodiments, the organic light-emitting display device further comprises: a thin-film transistor in each of the plurality of pixel areas; and an insulating layer between the thin-film transistor and the coating layer, wherein the light-absorbing material layer is arranged on the insulating layer.

[0024] In one or more embodiments, an area of ​​the light-absorbing material layer is smaller than an area of ​​an emission region of the white pixel area.

[0025] In one or more embodiments, the light-absorbing material layer has a plurality of light-absorbing material structures that are spaced apart from each other.

[0026] In one or more embodiments, the multitude of light-absorbing material structures are arranged along one direction to provide a striped structure.

[0027] In one or more embodiments, each of the multitude of light-absorbing material structures has a rod shape and one side surface of the light-absorbing material structure has an uneven shape.

[0028] In one or more embodiments, the light-absorbing material layer has a grid shape and an opening in it to expose part of the white pixel area.

[0029] In one or more embodiments, the organic light-emitting display device further comprises: a red color filter structure, a green color filter structure and a black matrix structure on one side of the light-absorbing material layer.

[0030] In another aspect, an organic light-emitting display device has a substrate having a red or green first pixel area and a white second pixel area; has an emitting diode on the substrate corresponding to the first and second pixel areas, wherein the emitting diode emits white light; has a color filter in the first pixel area and between the substrate and the emitting diode; and has a blue color filter structure on the substrate and under the emitting diode, wherein the blue color filter structure is arranged between the first and second pixel areas.

[0031] In one or more embodiments, the organic light-emitting display device further comprises: a bank arranged between the first and second pixel areas and covering an edge of a first electrode of the emitting diode, wherein the blue color filter structure overlaps the bank.

[0032] In one or more embodiments, the organic light-emitting display device further comprises: a light-absorbing material layer arranged in the second pixel area and comprising a light-absorbing dye, wherein the blue color filter structure is arranged between the color filter and the light-absorbing material layer and the light-absorbing dye has a principal absorption wavelength of about 500 to 640 nm.

[0033] It is understood that both the preceding general description and the following detailed description are examples and are explanatory, and are intended to provide a further explanation of the claimed invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The accompanying drawings, which are included to provide a further understanding of the invention and which are contained in and form part of this description, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. Fig. Figure 1 is a schematic top view of a pixel of an OLED device according to a first embodiment of the present invention. Fig. Figure 2 is a schematic cross-sectional view along line II of Fig. 1. Fig.Figure 3 is a graph showing an emission spectrum of an OLED device of the present invention and of an OLED device of a related technique. Fig. Figures 4A to 4E are schematic top views of a white pixel area of ​​an OLED device according to an embodiment of the present invention. Fig. Figure 5 is a schematic cross-sectional view of a pixel of an OLED device according to a second embodiment of the present invention. Fig. Figure 6 is a view illustrating a light-blocking structure in the OLED device of the second embodiment of the present invention. Fig. Figure 7 is a view illustrating a light guidance path in the OLED device of the second embodiment of the present invention. DETAILED DESCRIPTION OF THE EXECUTION FORMS

[0035] Reference will now be made in detail to embodiments of the invention, examples of which are illustrated in the accompanying drawings.

[0036] Fig. Figure 1 is a schematic top view of a pixel of an OLED device according to a first embodiment of the present invention. Fig. Figure 2 is a schematic cross-sectional view along line II of Fig. 1. All components of the OLED device according to all embodiments of the present invention are operationally coupled and configured.

[0037] Referring to Fig. 1 features an OLED device 100 (of Fig.2) A plurality of pixels P, which are contained within. Each or at least one of the pixels P has a red pixel area R-SP, a white pixel area W-SP, a blue pixel area B-SP, and a green pixel area G-SP. Each of the pixel areas R-SP, W-SP, B-SP, and G-SP has an emission area EA and a non-emission area NEA along an edge of the emission area EA. The non-emission area NEA is located at a periphery of the emission area EA. A bank 119 is located within the non-emission area NEA. The bank 119 is located at a boundary of each of the pixel areas R-SP, W-SP, B-SP, and G-SP.

[0038] In Fig.1. The pixel areas R-SP, W-SP, B-SP, and G-SP have the same width and are arranged along one direction. Alternatively, the pixel areas R-SP, W-SP, B-SP, and G-SP can have different widths (areas) and can be arranged to form different structures.

[0039] A driver thin-film transistor (TFT) DTr is formed in the non-emission region NEA of each pixel area R-SP, W-SP, B-SP, and G-SP. A light-emitting diode E (of Fig. 2), which is a first electrode 111 (of Fig. 2), an organic emission layer 113 (of Fig. 2) and a second electrode 115 (of Fig. 2) exhibits, in the emission area EA of each pixel area R-SP, W-SP, B-SP and G-SP are formed.

[0040] To emit (or display) red “R”, white “W”, blue “B” and green “G” light in the pixel areas R-SP, W-SP, B-SP and G-SP respectively, a red color filter 106a, a light-absorbing material layer 200, a blue color filter 106c and a green color filter 106b are formed in the emission area EA of the red, white, blue and green pixel areas R-SP, W-SP, B-SP and G-SP.

[0041] A multitude of microlens structures 117 are also formed in each pixel region R-SP, W-SP, B-SP, and G-SP. One form of the microlens structure 117 can be the same in each emission region EA. The external extraction efficiency of the organic emission layer 113 is improved by the microlens structure 117.

[0042] The microlens structure 117 is located on a surface of a coating layer 108 (of Fig.2) is formed and has a plurality of concave sections 117b and a plurality of convex sections 117a adjacent to the concave section 117b. The convex section 117a and the concave section 117b are arranged alternately with each other.

[0043] The light-absorbing material layer 200 comprises a white or transparent binder resin and a light-absorbing dye 210 dispersed in the binder resin within the white pixel region W-SP. The light-absorbing dye 210 has a principal absorption wavelength of approximately 500 to 640 nm.

[0044] The yellow light is absorbed by the light-absorbing dye 210 in such a way that the color temperature of the OLED device 100 is improved. In addition, the reflectance ratio is reduced by the light-absorbing dye 210, thus improving the visual sensitivity of the black color.

[0045] More precisely, Fig. 2 a schematic cross-sectional view along line II of Fig. 1.

[0046] Depending on the direction of light transmission from the emitting diode, OLED devices can be classified as top-emitter or bottom-emitter. The following discussion focuses on bottom-emitter OLED devices, but is not limited to them.

[0047] For clarification, an area in which the driver TFT DTr is formed is defined as a switching area TrA, and an area in which the emitter diode E is formed is defined as the emission area EA.

[0048] Referring to Fig. 2. The driver TFT DTr is formed in one pixel area R-SP. However, the driver TFT DTr is formed in all pixel areas R-SP, W-SP, B-SP and G-SP.

[0049] Each or a pixel P (of Fig.1) is defined by four adjacent pixel areas R-SP, W-SP, B-SP and G-SP along a direction, and the four pixel areas are each defined as red, white, blue and green pixel areas R-SP, W-SP, B-SP and G-SP.

[0050] As in Fig. Figure 2 shows a substrate 101 on which the driver TFT DTr and the emitting diode E are formed, encapsulated by a protective film 102.

[0051] A semiconductor layer 103 is arranged on the substrate 101 and in a region TrA. The semiconductor layer 103 is made of silicon. A center of the semiconductor layer 103 is defined as an active region 103a, forming a channel. High-concentration impurities are doped on both sides of the semiconductor layer 103, defining a source region 103b and a drain region 103c on either side of the active region 103a.

[0052] A gate insulating layer 105 is arranged on the semiconductor layer 103.

[0053] A gate electrode 107, corresponding to the active region 103a of the semiconductor layer 103, and a gate conductor extending along one direction are arranged on the gate insulating layer 105.

[0054] A first intermediate insulating layer 109a is arranged on the gate electrode 107 and the gate conductor. The first and second semiconductor contact holes 116, which respectively expose the source region 103b and the drain region 103c, are formed by the first intermediate insulating layer 109a and the gate insulating layer 105.

[0055] A source electrode 110a and a drain electrode 110b, spaced apart from each other, are arranged on the first intermediate insulating layer 109a. The source electrode 110a and the drain electrode 110b contact the source region 103b and the drain region 103c, respectively, through the first and second semiconductor contact holes 116.

[0056] A second intermediate insulating layer 109b is arranged on the source electrode 110a, the drain electrode 110b and the first intermediate insulating layer 109a between the source and drain electrodes 110a and 110b.

[0057] The source electrode 110a, the drain electrode 110b, the semiconductor layer 103 and the gate electrode 107 form the driver TFT DTr.

[0058] Furthermore, a data line 110c, which crosses the gate line to define the pixel areas R-SP, W-SP, B-SP and G-SP, and a switching TFT, which has a similar structure to the driver TFT DTr and is connected to the driver TFT DTr, are further formed.

[0059] In Fig.2 The semiconductor layer 103 is formed from polycrystalline silicon or an oxide semiconductor material, and the driver TFT DTr has a top-gate structure. Alternatively, the semiconductor layer can be formed from intrinsic amorphous silicon and amorphous silicon doped with foreign atoms, and the driver TFT DTr can have a bottom-gate structure.

[0060] If the semiconductor layer 103 is formed from the oxide semiconductor material, a light-shielding layer can be arranged beneath the semiconductor layer 103. The light-shielding layer can be arranged between the semiconductor layer 103 and a buffer layer on the substrate 101.

[0061] In addition, the color filters 106a, 106b and 106c, which correspond to the red, green and blue pixel areas R-SP, G-SP and B-SP respectively, and the light-absorbing material layer 200, which corresponds to the white pixel area W-SP, are arranged on the second intermediate insulating layer 109b and in the emission area EA.

[0062] The white light from the organic emission layer 113 is filtered or converted by the red, green and blue color filters 106a, 106b and 106c in the red, green and blue pixel areas R-SP, G-SP and B-SP.

[0063] The light-absorbing material layer 200 in the white pixel area W-SP comprises a white or transparent binder resin and at least one light-absorbing dye 210 dispersed in the binder resin. The binder resin can be formed from at least one material selected from the group consisting of a polyester-based resin, an acrylic-based resin, a polyurethane-based resin, a melamine-based resin, a polyvinyl alcohol-based resin, and an oxazole-based resin. Preferably, the binder resin is the acrylic-based resin.

[0064] The light-absorbing dye 210 has a predetermined absorption wavelength. A major (essential) absorption wavelength of the light-absorbing dye 210 is approximately 500 to 640 nm. The light-absorbing dye 210 may contain one or more tetra-azaporphyrin (TAP), rhodamine, squalene, and cyanine (CY)-based materials. For example, the light-absorbing dye 210 may have a weight percent of approximately 10 to 30 with respect to the binder resin. If the light-absorbing dye 210 has a weight percent of less than 10, the absorption ratio at the predetermined absorption wavelength is too low, so there can be no increase in color temperature. On the other hand, if the light-absorbing dye 210 has a weight percent greater than 30, the transmission is reduced, thus decreasing the emission efficiency.

[0065] In the OLED device 100, which has the light-absorbing material layer 200 in the white pixel area W-SP, the color temperature and the visual black sensitivity are improved.

[0066] A coating layer 108 is arranged on the color filters 106a, 106b, and 106c and the light-absorbing material layer 200. A drain contact hole 110d, which exposes the drain electrode 110b, is formed by the coating layer 108 and the second intermediate insulating layer 109b. A surface of the coating layer 108 provides a multitude of concave sections and a multitude of convex sections, thus providing the microlens structure 117.

[0067] The coating layer 108 consists of an insulating material with a refractive index of approximately 1.5. For example, the coating layer 108 can be formed from, but is not limited to, an acrylic-based resin, a phenol-based resin, a polyamide-based resin, a polyimide-based resin, an unsaturated polyester-based resin, a polyphenylene-based resin, a polyphenylene sulfide-based resin, a benzocyclobutene-based resin, or a photoresist.

[0068] Since the microlens structure 117 is provided by the surface of the coating layer 108, the light extraction efficiency of the OLED device 100 is improved.

[0069] The first electrode 111, which is connected to the drain electrode 110b via the drain contact hole 110d, is arranged on the coating layer 108. The first electrode 111 can be made of a conductive material with a relatively high work function to serve as the anode.

[0070] For example, the first electrode 111 can be made of a metal oxide material, e.g., indium tin oxide (ITO) or indium zinc oxide (IZO), a mixture of metal and oxide, e.g., ZnO:Al or SnO2:Sb, or a conductive polymer, for example, poly(3-methylthiophene), poly[3,4-(ethylene-1,2-dioxy)thiophene] (PEDT), polypyrrole, or polyaniline. In addition, the first electrode 111 can be made of carbon nanotubes (CNTs), graphene, or silver nanowire.

[0071] The first electrode 111 is separated in each pixel area R-SP, W-SP, B-SP, and G-SP. The bank 119 is arranged between adjacent first electrodes 111. Specifically, the first electrodes 111 in the pixel areas R-SP, W-SP, B-SP, and G-SP are separated by the bank 119 at the boundary of the pixel areas R-SP, W-SP, B-SP, and G-SP.

[0072] The organic emission layer 113 is arranged on the first electrode 111. The organic emission layer 113 can have a single-layer structure consisting of an emission material. Alternatively, the organic emission layer 113 can have a multi-layer structure consisting of a hole injection layer, a hole transport layer, an emitting material layer, an electron transport layer, and an electron injection layer to improve emission efficiency.

[0073] The second electrode 115 is arranged on the organic emission layer 113 and over an entire surface of the substrate 101. The second electrode 115 can be made of a conductive material with a relatively low work function to serve as a cathode. For example, the second electrode 115 can be made of Ag, Mg, or an alloy thereof.

[0074] When voltages are applied to the first and second electrodes 111 and 115, a hole from the first electrode 111 and an electron from the second electrode 115 are transferred into the organic emission layer 113 to form an exciton. The exciton is converted from an excited state to a ground state, so that light is emitted from the emitting diode E.

[0075] The light from the emitting diode E passes through the first electrode 111 in such a way that the OLED device 100 displays an image.

[0076] The concave section 117b and the convex section 117a on the surface of the coating layer 108 are reflected in the first electrode 111, the organic material layer 113 and the second electrode 115, which are stacked sequentially on the coating layer 108, thus providing the microlens structure 117.

[0077] The protective film 102, as a thin film, is formed on or over the driver TFT DTr and the emitting diode E in such a way that the OLED device 100 is encapsulated by the protective film 102.

[0078] The penetration of external oxygen and / or moisture is blocked by the protective film 102. The protective film 102 can comprise at least two inorganic protective films. An organic protective film can be positioned between two inorganic protective films to improve the impact resistance of the protective film 102.

[0079] To block the penetration of external oxygen and / or moisture through a side surface of the organic protective film, the side surface of the organic protective film can be completely covered by the inorganic protective film.

[0080] Accordingly, the ingress of external oxygen and / or moisture into the interior of the OLED device 100 is prevented.

[0081] In addition, a polarizing plate 120 can be arranged or attached to an outside of the substrate 101 to prevent a reduction in the contrast ratio due to ambient light reflection.

[0082] The polarization plate 120 is arranged in a light path from the organic emission layer 113 when the OLED device 100 is driven, so that the contrast ratio of the OLED device 100 is improved.

[0083] For example, the polarization plate 120 can be a circular polarization plate. The polarization plate 120 can include a retardation plate and a linear polarization plate. The retardation plate can be arranged between the substrate 101 and the linear polarization plate.

[0084] The retardation plate can be a quarter-wave plate (1 / 4 λ plate, QWP). The linear polarization plate has one polarization axis, and the light is linearly polarized along one direction of the polarization axis.

[0085] Furthermore, a surface modification layer can be arranged on the outer surface of the linear polarizing plate. The surface modification layer can be a glare reduction layer, comprising a silica sphere or a hard coating layer, which prevents damage to the polarizing plate 120.

[0086] As already mentioned, in the OLED device 100 according to the first embodiment of the present invention, since the surface of the coating layer 108 forms the microlens structure 117 with the concave section 117b and the convex section 117a, the light extraction efficiency can be improved.

[0087] A portion of the light from the organic emission layer 113 is totally reflected between the organic emission layer 113 and the second electrode 115, so that the light is trapped in the space between the organic emission layer 113 and the second electrode 115. In the OLED device 100 of the present invention, however, the light strikes the microlens structure 117 at an angle smaller than the critical angle of total internal reflection, thus increasing the external emission efficiency through multiple reflections. Accordingly, the light extraction efficiency of the OLED device 100 is improved.

[0088] Since the light-absorbing material layer 200 in the white pixel area W-SP also has the light-absorbing dye 210 with a main absorption wavelength of about 500 to 640 nm, the color temperature of the OLED device 100 is improved and the visual black sensitivity is also improved.

[0089] In general, the chromaticity of the light source, or the white reference color, can be defined by the temperature of the nearest region on the radiation curve instead of the coordinate in the two-dimensional color coordinate. It can be referred to as a correlated color temperature (CCT) or a color temperature.

[0090] Color temperature is used as a reference to indicate which color is closer to white. If the color of the display device is closer to blue, the color temperature is relatively high. If the color of the display device is closer to yellow, the color temperature is relatively low. The display device can provide a high-quality (or high-color) image with a high color temperature.

[0091] To provide a high-quality (color) image in the display device using an emission diode that emits white light, it is preferred that the color temperature of the white light be high. Accordingly, the color temperature of the white light is required to be above approximately 7000 K.

[0092] The color coordinate (CIE), luminance efficiency (cd / A) and color temperature in a white pixel area W-SP and the power consumption [W] of a moving standard image in a general OLED device without microlens structure (“Example 1”) and an OLED device which has the microlens structure without a light-absorbing material layer (“Example 2”) are measured and listed in Table 1. Table 1 Example 1 Example 2 CIE X 0.290 0.326 Y 0.316 0.336 cd / A 35.1 46.9(+33%) Color temperature 7000K 5800K electricity consumption R 1.35 0.64(-53%) G 0395 0.98(+3%) B 1.41 1.47(+4%) W 0.55 1.07(-31%)

[0093] Referring to Table 1, the luminance efficiency (optical efficiency) of "Example 2" is increased by 33% compared to "Example 1". However, the color temperature of 5800K of "Example 2" is lower than the color temperature of 7000K of "Example 1".

[0094] To increase the color temperature of "Example 2", the emission intensity in the blue pixel area can be increased. However, this causes disadvantages in terms of power consumption and lifespan, thus reducing the efficiency of the display panel.

[0095] On the other hand, in the OLED device 100 according to the first embodiment of the present invention, even though the microlens structure 117 is formed on the surface of the coating layer 108 to improve the light extraction efficiency, the OLED device 100 has a high color temperature, so that a high-quality display can be provided.

[0096] The OLED device 100 has the light-absorbing material layer 200 with the light-absorbing dye 210 in the white pixel area W-SP such that the color temperature is increased.

[0097] The color coordinate (CIE), luminance efficiency (cd / A), and color temperature of a general OLED device without a microlens structure (“Example 1”), an OLED device with the microlens structure but without a light-absorbing material layer (“Example 2”), and an OLED device with the microlens structure and the light-absorbing material layer (“Example 3”) according to the embodiment(s) of the present invention are measured and listed in Table 2. The color coordinate, luminance efficiency, and color temperature are measured in the white pixel area W-SP. Table 2 Example 1 Example 2 Example 3 CIE x 0.290 0.326 0.291 y 0.316 0.3.36 0.308 cd / A 35.1 46,9(+33%) 40,4(+15%) Color temperature 7000K 5800K 9800K

[0098] Referring to Table 2, the luminance efficiency of "Example 3" is lower than that of "Example 2". However, compared to "Example 1", the luminance efficiency of "Example 3" is 15% higher. Furthermore, the color temperature of "Example 3" (9800K) is higher than the color temperature of "Example 1" (7000K) and the color temperature of "Example 2" (5800K).

[0099] Since the microlens structure 117 is provided on the surface of the coating layer 108 in the OLED device 100 of the first embodiment of the present invention, the light extraction efficiency is improved. Furthermore, since the light-absorbing material layer 200, which comprises the light-absorbing dye 210, is provided in the white pixel area W-SP, the color temperature is also improved.

[0100] As mentioned above, since the light-absorbing dye 210 in the light-absorbing material layer 200 has the main absorption wavelength of about 500 to 640 nm, the yellow light in the white light from the emitting diode E is absorbed by the light-absorbing material layer 200.

[0101] Referring to Fig. 3 The general OLED device “Example 1” has a substantially uniform transmission (T) throughout the visible radiation range, whereas the OLED device “Example 3” of the present invention has a lower transmission in a “C” range.

[0102] Since the light-absorbing dye 210, which has a main absorption wavelength range of approximately 500 to 640 nm and a peak absorption wavelength range of approximately 580 to 620 nm, is contained in the light-absorbing material layer 200 in the white pixel area W-SP, the transmittance in the wavelength range of approximately 500 to 640 nm, and especially approximately 580 to 620 nm, is reduced. In other words, in the OLED device 100, the light in the wavelength range of approximately 500 to 640 nm is partially absorbed, so that the white light is shifted towards blue and a high color temperature is provided.

[0103] For example, the white light emitted in the white pixel area W-SP in the OLED device 100 has a CIE(X) of 0.291 and a CIE(Y) of 0.308, or the color coordinate index is shifted in one direction downwards to the left in the color coordinate.

[0104] The proportion of blue light in the white light is increased in such a way that the color temperature of the white light is increased.

[0105] Accordingly, the OLED device 100 (“Example 3”) of the present invention provides white light with a high color temperature, thus improving the color quality of the image.

[0106] Since the color temperature of the OLED device is increased by 100, the brightness in the full white-grayscale is also improved compared to the OLED device with the microlens structure without the light-absorbing material layer. Table 3 Example 1 Example 2 Example 3 WS CIE X 0.290 0,326 0.291 u 0.316 0.336 0.308 Cd / A 35,1 46.9(+33%) 40,4(+15%) Brightness in WCT full 193 178(-8%) 269(+39%) 1 / 4 726 687(-5%) 1000(+38%)

[0107] Referring to Table 3, the luminance efficiency (cd / A) of "Example 3" is lower than that of "Example 2". However, the brightness of "Example 3" in the WCT is higher than that of "Example 2".

[0108] Table 3 shows the color coordinate index and brightness efficiency measured in the white pixel area W-SP "WS". For example, "WS" preferably means that only the white pixel area is driven. The brightness in the WCT (white color tracking) is measured by driving the white pixel area W-SP, the green pixel area G-SP, and the blue pixel area B-SP without the red pixel area R-SP. "Full" preferably means that the white pixel area W-SP, the green pixel area G-SP, and the blue pixel area B-SP are driven in an entire display area (active area), and "1 / 4" preferably means that the white pixel area W-SP, the green pixel area G-SP, and the blue pixel area B-SP are driven in 1 / 4 of an entire display area.

[0109] To perform white color tracking for testing a color temperature in a full white-grayscale, the white pixel area W-SP, the green pixel area G-SP, and the blue pixel area B-SP are addressed. In the OLED device with the microlens structure without a light-absorbing material layer ("Example 2"), the color temperature is low, so the contribution of the blue pixel area should be increased to improve the color temperature.

[0110] Accordingly, in the OLED device of “Example 2”, the energy consumption is increased, and the lifetime of the emitting diode E in the blue pixel area is reduced, thus decreasing the efficiency of the OLED device.

[0111] As a result, when the full white-grey is provided, the brightness of the OLED device of "Example 2", which has the microlens structure without a light-absorbing material layer, is reduced by about 8% compared to the general OLED device of "Example 1".

[0112] However, since the color temperature of the OLED device of "Example 3" of the present invention is improved, it is not necessary to overdrive the blue pixel area. Accordingly, the brightness of the OLED device of "Example 3" according to the present invention is greatly improved compared to the OLED devices of "Example 1" and "Example 2".

[0113] As mentioned above, the OLED device 100 of the present invention incorporates a microlens structure 117 on the coating layer 108, thus improving the light extraction efficiency. Furthermore, the light-absorbing material layer 200 with the light-absorbing dye 210 is positioned in the white pixel area W-SP to increase the color temperature. Accordingly, the OLED device 100 provides high-quality color (or image) with high efficiency.

[0114] On the other hand, if the light-absorbing material layer is provided in the white pixel area of ​​the general OLED device without the microlens structure, the brightness efficiency and brightness are reduced. Table 4 Example 1 Example 3 Example 4 WS CIE X 0.290 0.291 0.255 u 0.316 0.308 0.284 Cd / A 35.1 40.4(+15%) 28.1(-19%) Brightness in WCT full 193 269(+39%) 132(-31%) 1 / 4 726 1000(+38%) 504(-30%)

[0115] Table 4 shows the OLED device of “Example 4”, which has the light-absorbing material layer that has the light-absorbing dye without the microlens structure.

[0116] As shown in Table 4, the brightness efficiency of the OLED device in "Example 4" is lower than that of the OLED device in "Example 1". In particular, the brightness is noticeably reduced by about 30% in the full white-grayscale mode.

[0117] Furthermore, compared to the OLED device “Example 3” of the present invention, the brightness WCT in the OLED device of “Example 4” is reduced by about 50%.

[0118] It is preferred that the OLED device 100 has both the microlens structure 117 on the coating layer 108 and the light-absorbing material layer 200 in the white pixel area W-SP to provide high efficiency and high color temperature.

[0119] In addition, the visual black sensitivity of the OLED device is improved by 100.

[0120] In general, the reflectance in the white pixel area W-SP is higher than in the red, green and blue pixel areas R-SP, G-SP and B-SP respectively, including the red, green and blue color filters 106a, 106b and 106c, and the visual black sensitivity is degraded by the reflected light in the white pixel area W-SP.

[0121] Since the light diffusion component is increased by the microlens structure 117, the effect of the color filters 106a, 106b, and 106c is also generated by the light diffusion component. As a result, the visual black sensitivity is further reduced.

[0122] On the other hand, visual sensitivity is highest in the green wavelength range. Specifically, the eye is most sensitive to light of approximately 550 nm in the green wavelength range.

[0123] However, since the OLED device 100 has the light-absorbing material layer 200, which contains the light-absorbing dye 210 having a main absorption wavelength of approximately 500 to 640 nm, the light in the wavelength range of approximately 500 to 640 nm is absorbed by the light-absorbing material layer 200 in the white pixel area W-SP, thus reducing the reflectance and the light diffusion component in the white pixel area W-SP. As a result, the visual black sensitivity is improved. Table 5 R avg (%) R 550nm (%) L D (%) Example 2 2.3 1.5 2.63 Example 3 2.1 1.3 1.78

[0124] In Table 5, “R avg “an average reflectance and “R 550nm “ is a reflectance at a wavelength of 550 nm. “L D “ is a value that converts an average reflectance using the brightness curve in the CIE Lab color space. The “R avg “, “R 550nm “ and “L D“are measured in all red, green, blue and white pixel areas.

[0125] As shown in Table 5, the reflectance in “Example 3” is reduced compared to “Example 2”. The “R avg “ is reduced by about 9%, the “R 550nm “ is reduced by about 13% and the “L D “ is reduced by about 32%.

[0126] In the OLED device 100, the microlens structure 117 is located on the coating layer 108 and the light-absorbing material layer 200, which contains the light-absorbing dye 210 with a main absorption wavelength of approximately 500 to 640 nm. In the white pixel area W-SP, the reflection and light diffusion components are reduced. As a result, the color temperature and visual black sensitivity are improved, thus enhancing the optical efficiency of the OLED device 100 and providing a high-quality color image.

[0127] Fig. Figures 4A to 4E are schematic top views of a white pixel area of ​​an OLED device according to an embodiment of the present invention.

[0128] As mentioned above, the light-absorbing material layer 200 in the white pixel area W-SP is white or transparent and contains the light-absorbing dye 210 with a main absorption wavelength of approximately 500 to 640 nm. Light from 500 to 640 nm (e.g., yellow light) is absorbed by the light-absorbing material layer 200, thus increasing the color temperature. Furthermore, the reflectance is reduced by the light-absorbing material layer 200, thereby improving the visual black sensitivity.

[0129] As in Fig. As shown in Figures 4A to 4E, the light-absorbing material layer 200 has a variety of structures and an area that is smaller than the emission area EA of the white pixel area W-SP. The area of ​​the light-absorbing material layer 200 can be equal to or greater than 40% of the area of ​​the emission area EA of the white pixel area W-SP.

[0130] The color temperature of the OLED device of the present invention, according to the area ratio of the light-absorbing material layer to the emission area of ​​the white pixel area, has been measured and is listed in Table 6. Table 6 Area of ​​the light-absorbing material layer Example 3 100% 9800K 70% B600K 40% 7500K 0% 5800K

[0131] Referring to Table 6, if the light-absorbing material layer is designed to correspond to an entire emission range of the white pixel area (100%), the color temperature is very high (9800 K).

[0132] Since the color temperature of the white light is required to be around 7000 K, the light-absorbing material layer has an area ratio equal to or greater than approximately 40%. For example, the area of ​​the light-absorbing material layer can be approximately 40 to 70% of the emission area of ​​the white pixel area. If the area of ​​the light-absorbing material layer is too large (e.g., exceeding 70% of the emission area of ​​the white pixel area), the OLED device will have an excessively high color temperature, which can degrade the color quality of the OLED device.

[0133] On the other hand, the red, green and blue color filters 106a, 106b and 106c have essentially the same area as the emission area EA in the red, green and blue pixel areas R-SP, G-SP and B-SP.

[0134] Referring to Fig.4A features a light-absorbing material layer 200, which contains the light-absorbing dye 210, in the emission region EA of the white pixel area W-SP. This layer comprises a multitude of spaced-apart light-absorbing material structures. The light-absorbing material structure has a circular shape. Alternatively, the light-absorbing material structure can have a rectangular or square shape. However, the shape of the light-absorbing material structure is not limited to these forms.

[0135] Referring to Fig. 4B and Fig. 4C has a light-absorbing material layer 200, which contains the light-absorbing dye 210, and in the emission region EA of the white pixel region W-SP, a multitude of light-absorbing material structures that have a rod shape and are spaced apart from one another. The multitude of light-absorbing material structures are arranged along a first direction ( Fig.4B) arranged or along a second direction perpendicular to the first direction ( Fig. 4C), arranged to form a striped structure. In this case, as in Fig. As shown in Figure 4E, a side surface of the rod-shaped light-absorbing material structure can have a convex shape and a concave shape (i.e., an uneven shape).

[0136] Referring to Fig. 4D has a lattice shape with an opening in the emission region EA of the white pixel area W-SP, in which the light-absorbing material layer 200, which contains the light-absorbing dye 210, is formed.

[0137] The light-absorbing material structures cover part of the emission region EA and expose the other part of the emission region EA between adjacent light-absorbing material structures. The light-absorbing material layer 200 has an area smaller than the emission region EA of the white pixel region W-SP and features a multitude of light-absorbing material structures or a grid shape, thus improving the light uniformity (or optical uniformity) in the white pixel region W-SP.

[0138] For example, if the light-absorbing material layer 200, with an area smaller than the emission area EA of the white pixel area W-SP, is located on one side of the emission area EA or in the middle of the emission area EA, there will be a difference in the light properties between an area with the light-absorbing material layer 200 and the other area without the light-absorbing material layer 200.

[0139] However, if, for example, the light-absorbing material layer 200 has a large number of light-absorbing material structures that are spaced apart from each other, as in Fig.As shown in Figure 4A, an area with the light-absorbing material structure and another area without the light-absorbing material structure are arranged alternately, so that the difference in light properties is compensated. As a result, the decrease in the uniformity of the light properties in the white pixel area W-SP is prevented.

[0140] The microlens structure 117 with a circular shape is shown. However, it is not limited to this. For example, the microlens structure 117 can have a hexagonal or an oval shape.

[0141] Fig. Figure 5 is a schematic cross-sectional view of a pixel of an OLED device according to a second embodiment of the present invention. Fig. Figure 6 is a view illustrating a light-blocking structure in the OLED device of the second embodiment of the present invention, and Fig.Figure 7 is a view illustrating a light guidance path in the OLED device of the second embodiment of the present invention.

[0142] As in Fig. As shown in Figure 5, in the OLED device 100 according to the second embodiment of the present invention, a substrate 101, on which the driver TFT DTr and the emitting diode E are formed, is encapsulated by a protective film 102.

[0143] The driver TFT DTr is located in a region TrA of each of the red, green, blue, and white pixel regions R-SP, G-SP, B-SP, and W-SP. The driver TFT DTr comprises the source electrode 110a, the drain electrode 110b, the semiconductor layer 103 with the source region 103b and the drain region 103c, and the gate electrode 107.

[0144] The first intermediate insulating layer 109a is arranged on the gate electrode 107. The first and second semiconductor contact holes 116, which respectively expose the source region 103b and the drain region 103c, are formed by the first intermediate insulating layer 109a and the gate insulating layer 105.

[0145] The second intermediate insulating layer 109b is arranged on the source electrode 110a, the drain electrode 110b.

[0146] The color filters 106a, 106b and 106c and the light-absorbing material layer 200 are each arranged on the second intermediate insulating layer 109b and in the red, green, blue and white pixel areas R-SP, G-SP, B-SP and W-SP.

[0147] The white light from the organic emission layer 113 is filtered or converted by the red, green, and blue color filters 106a, 106b, and 106c in the red, green, and blue pixel areas R-SP, G-SP, and B-SP, respectively. Additionally, the light-absorbing material layer 200 is located in the emission region EA of the white pixel area W-SP. A portion of the white light from the organic emission layer 113 is absorbed by the light-absorbing material layer 200 to increase the color temperature. As a result, red, green, blue, and white light are provided accordingly in the red, green, blue, and white pixel areas R-SP, G-SP, B-SP, and W-SP, respectively.

[0148] The light-absorbing material layer 200 in the white pixel area W-SP is white or transparent. For example, if the light-absorbing material layer 200 is transparent, it may comprise a binder resin selected from the group consisting of a polyester-based resin, an acrylic-based resin, a polyurethane-based resin, a melamine-based resin, a polyvinyl alcohol-based resin, and an oxazole-based resin. Preferably, the binder resin is the acrylic-based resin.

[0149] Furthermore, the light-absorbing material layer 200 comprises at least one light-absorbing dye 210 dispersed in the binder resin. The light-absorbing dye 210 has a predetermined absorption wavelength. A principal absorption wavelength of the light-absorbing dye 210 is approximately 500 to 640 nm. The light-absorbing dye 210 may be tetra-azaporphyrin (TAP), rhodamine, squalene, or cyanine (CY) based.

[0150] In the OLED device 100, which has the light-absorbing material layer 200 in the white pixel area W-SP, the color temperature and the visual black sensitivity are improved.

[0151] The OLED device 100 further features a blue color filter structure 220 around an edge of the emission region EA of the white pixel region W-SP. The blue color filter structure 220 can be arranged in the non-emission region NEA.

[0152] The blue color filter structure 220 surrounds the light-absorbing material layer 200 and can contact it. In a top view, the blue color filter structure 220 can be located between the light-absorbing material layer 200 in the white pixel area W-SP and the red color filter 106a in the red pixel area R-SP, and between the light-absorbing material layer 200 in the white pixel area W-SP and the blue color filter 106c in the blue pixel area B-SP, overlapping the bank 119 in a top view. Since the bank 119 is located at a boundary of each of the pixel areas R-SP, W-SP, B-SP, and G-SP, the blue color filter structure 220 can be located at the boundary of the white pixel area W-SP. Furthermore, the blue color filter structure 220 can overlap the data line 110c and / or the gate line in a top view.

[0153] In the white pixel area W-SP of the OLED device 100, the emission of red light is prevented, and the emission of blue light is generated, thus further improving the color temperature of the OLED device 100.

[0154] The coating layer 108 is arranged on the color filters 106a, 106b, and 106c and the light-absorbing material layer 200. A drain contact hole 110d, which exposes the drain electrode 110b, is formed by the coating layer 108 and the second intermediate insulating layer 109b. A surface of the coating layer 108 provides a multitude of concave sections and a multitude of convex sections, thus providing the microlens structure 117.

[0155] Since the microlens structure 117 is provided by the surface of the coating layer 108, the light extraction efficiency of the OLED device 100 is improved.

[0156] The first electrode 111, which is connected to the drain electrode 110b via the drain contact hole 110d, is arranged on the coating layer 108. The first electrode 111 can be made of a conductive material with a relatively high work function to serve as the anode.

[0157] The first electrode 111 is separated in each pixel area R-SP, W-SP, B-SP and G-SP, and the bank 119 is arranged between adjacent first electrodes 111.

[0158] The organic emission layer 113 is arranged on the first electrode 111, and the second electrode 115 is arranged as a cathode on the organic emission layer 113.

[0159] When voltages are applied to the first and second electrodes 111 and 115, a hole from the first electrode 111 and an electron from the second electrode 115 are transferred into the organic emission layer 113 to form an exciton. The exciton is converted from an excited state to a ground state, so that light is emitted from the emitting diode E.

[0160] The light from the emitting diode E passes through the first electrode 111 in such a way that the OLED device 100 displays an image.

[0161] The concave section 117b and the convex section 117a on the surface of the coating layer 108 are reflected onto the first electrode 111, the organic material layer 113 and the second electrode 115, which are sequentially stacked on the coating layer 108, thus providing the microlens structure 117.

[0162] As mentioned above, in the OLED device 100 according to the first embodiment of the present invention, the light extraction efficiency is improved because the surface of the coating layer 108 forms the microlens structure 117, which has the concave section 117b and the convex area 117a.

[0163] A portion of the light from the organic emission layer 113 is totally reflected between the organic emission layer 113 and the second electrode 115, so that the light is trapped in the space between the organic emission layer 113 and the second electrode 115. In the OLED device 100 of the present invention, however, the light strikes the microlens structure 117 at an angle smaller than the critical angle of total internal reflection, thus increasing the external emission efficiency through multiple reflections. Accordingly, the light extraction efficiency of the OLED device 100 is improved.

[0164] Furthermore, since the light-absorbing material layer 200 in the white pixel area W-SP has the light-absorbing dye 210 with a main absorption wavelength of about 500 to 640 nm, the color temperature of the OLED device 100 is improved and the visual black sensitivity is also improved.

[0165] Since the light-absorbing dye 210 in the light-absorbing material layer 200 has a main absorption wavelength of about 500 to 640 nm, the yellow light of the light from the emitting diode E is absorbed by the light-absorbing dye 210 in such a way that a blue component is increased, thus increasing the color temperature.

[0166] In addition, the reflectance and light diffusion component in the white pixel area W-SP are reduced by the light-absorbing material layer 200, thus improving the visual black sensitivity.

[0167] As mentioned above, the OLED device 100 features the blue color filter structure 220 on one side of the emission area EA of the white pixel area W-SP, thus further improving the color temperature.

[0168] In the OLED device 100, which has the microlens structure 117, some of the light from the organic emission layer 113 exits to metal conductors, for example the data line 110c on the substrate 101. The exiting light is reflected by the data line 110c and strikes the microlens structure 117 in the adjacent pixel area.

[0169] For example, when the light emitted from the red pixel area R-SP, which is adjacent to the white pixel area W-SP, strikes the microlens structure 117 in the white pixel area W-SP, not only white light but also the emitted red light from the white pixel area W-SP is emitted, thus reducing the color temperature. In particular, when the microlens structure 117 is present, the light is scattered by the organic emission layer 113 in such a way that the reduction in color temperature from the red pixel area R-SP to the white pixel area W-SP can be significantly achieved.

[0170] However, as in Fig.As shown in Figure 6, in the OLED device 100, which has the blue color filter structure 220 at the edge of the emission area EA in the white pixel area W-SP, the light emitted (or exiting) from the red pixel area R-SP through the red filter 106a and reflected by the data line 110c towards the white pixel area W-SP is absorbed by the blue color filter structure 220. This prevents the red light leaking from the red pixel area R-SP from reaching the white pixel area W-SP. Consequently, the decrease in color temperature resulting from the light leak from the red pixel area R-SP is prevented.

[0171] The blue color filter structure 220 in the non-emission area NEA of the white pixel area W-SP serves as a blocking structure to block the light from the red pixel area R-SP into the white pixel area W-SP.

[0172] In Fig.6. The blue color filter structure 220 is arranged in the non-emission area NEA of the white pixel area W-SP. Alternatively, a green color filter structure or a black matrix structure can be arranged in the non-emission area NEA of the white pixel area W-SP instead of the blue color filter structure 220 to block the light from the red pixel area R-SP into the white pixel area W-SP.

[0173] Alternatively, to block the decrease in color temperature caused by light from the green pixel area G-SP to the white pixel area W-SP, the blue color filter structure 220, a red color filter structure or the black matrix structure can be arranged in the non-emission area NEA of the white pixel area W-SP, i.e. on one side of the light-absorbing material layer 200.

[0174] In other words, one of the blue color filter structure 220, the green color filter structure and the black matrix structure is formed on one side of the light-absorbing material layer 200 to block the decrease in color temperature caused by light from the red pixel area R-SP into the white pixel area W-SP, and one of the blue color filter structure 220, the red color filter structure and the black matrix structure is formed on one side of the light-absorbing material layer 200 to block the decrease in color temperature caused by light from the green pixel area G-SP into the white pixel area W-SP.

[0175] On the other hand, as in Fig.As shown in Figure 7, the white light emitted (or leaked) from the adjacent red pixel area R-SP is reflected by the data line 110c and passes through the blue color filter structure 220, so that blue light falls on the white pixel area W-SP. Accordingly, the white pixel area W-SP emits not only white light but also blue light from the white pixel area W-SP, thus improving the color temperature.

[0176] Without targeting the blue pixel area B-SP to increase the color temperature, the blue component in the white pixel area W-SP is increased by the blue color filter structure 220, thus improving the color temperature of the OLED device by 100.

[0177] In the Fig.In sections 5 to 7, the blue color filter structure 220 contacts both the red color filter 106a and the light-absorbing material layer 200 and completely fills the space between the red color filter 106a and the light-absorbing material layer 200. Alternatively, the blue color filter structure 220 can be spaced from at least one of the red color filter 106a and / or the light-absorbing material layer 200. For example, a space can be arranged between the blue color filter structure 220 and the red color filter 106a, between the blue color filter structure 220 and the light-absorbing material layer 200, or between the blue color filter structure 220 and each of the red color filter 106a and the light-absorbing material layer 200, and the coating layer 108 can fill the space.This means that a flat surface of the blue color filter structure 220 can be smaller than that of the space between the red color filter 106a and the light-absorbing material layer 200.

[0178] In the OLED device 100, the white light is shifted blue by the light-absorbing dye 210 in the light-absorbing material layer 200, thus increasing the color temperature. Furthermore, the blue color filter structure 220 is arranged around an edge of the emission area EA of the white pixel area W-SP and in the non-emission area NEA such that the decrease in color temperature due to light emission from the red pixel area R-SP is prevented. In addition, the light loss from the red pixel area R-SP is converted into blue light by the blue color filter structure 220, thus further increasing the color temperature.

Claims

[1] Organic light-emitting display device (100) comprising: a substrate (101) with a plurality of pixel areas (R-SP, G-SP, B-SP, W-SP); a light-absorbing material layer (200) in a white pixel area (W-SP) of the plurality of pixel areas (R-SP, G-SP, B-SP, W-SP) and comprising a light-absorbing dye (210); a coating layer (108) on the light-absorbing material layer (200); a microlens structure (117) on an upper surface of the coating layer (108); and an emitting diode (E) on the microlens structure (117), wherein the light-absorbing dye (210) has a main absorption wavelength range of approximately 500 to 640 nm, wherein the light-absorbing material layer (200) in an emission region (EA) of each white pixel region (W-SP) has a plurality of light-absorbing material structures spaced apart from each other. [2] Organic light-emitting display device (100) according to claim 1, wherein an area of ​​the light-absorbing material layer (200) is over about 40% of an area of ​​the emission area (EA) of the white pixel area (W-SP). [3] Organic light-emitting display device (100) according to claim 1 or 2, wherein the light-absorbing dye (210) comprises one or more of tetra-aza-porphyrin (TAP), rhodamine, squalene and cyanine (CY)-based material. [4] Organic light-emitting display device (100) according to any one of claims 1 to 3, wherein the light-absorbing material layer (200) is transparent or white. [5] Organic light-emitting display device (100) according to any one of claims 1 to 4, further comprising a blue color filter structure (220) on one side of the light-absorbing material layer (200). [6] Organic light-emitting display device (100) according to claim 5, further comprising a bank (119) at a boundary of the white pixel area (W-SP), wherein the blue color filter structure (220) overlaps the bank (119). [7] Organic light-emitting display device (100) according to claim 5, further comprising a metal conductor (110c) at a boundary of the white pixel area (W-SP), wherein the blue color filter structure (220) overlaps the metal conductor (110c). [8] Organic light-emitting display device (100) according to any one of claims 1 to 7, wherein the coating layer (108) has a refractive index of about 1.

5. [9] Organic light-emitting display device (100) according to any one of claims 1 to 8, wherein the coating layer (108) comprises at least one of an acrylic-based resin, a phenol-based resin, a polyamide-based resin, a polyimide-based resin, an unsaturated polyester-based resin, a polyphenylene-based resin, a polyphenylene sulfide-based resin, a benzocyclobutene-based resin and a photoresist. [10] Organic light-emitting display device (100) according to any one of claims 1 to 9, wherein the plurality of pixel areas (R-SP, G-SP, B-SP, W-SP) further comprise a red pixel area (R-SP), a green pixel area (G-SP) and a blue pixel area (B-SP) and a red color filter (106a), a green color filter (106b) or a blue color filter (106c) are arranged in the red, green or blue pixel area (R-SP, G-SP, B-SP). [11] Organic light-emitting display device (100) according to any one of claims 1 to 10, further comprising: a thin-film transistor (DTr) in each of the multiple pixel areas (R-SP, G-SP, B-SP, W-SP); and an insulating layer (109b) between the thin-film transistor (DTr) and the coating layer (108), wherein the light-absorbing material layer (200) is arranged on the insulating layer (109b). [12] Organic light-emitting display device (100) according to any one of claims 1 to 11, wherein an area of ​​the light-absorbing material layer (200) is smaller than an area of ​​the emission area (EA) of the white pixel areas (W-SP). [13] Organic light-emitting display device (100) according to any one of claims 1 to 12, wherein the plurality of light-absorbing material structures are arranged along one direction to provide a striped structure. [14] Organic light-emitting display device (100) according to any one of claims 1 to 13, wherein each of the plurality of light-absorbing material structures has a bar shape and one side surface of the light-absorbing material structures has an uneven shape. [15] Organic light-emitting display device (100) according to any one of claims 1 to 14, wherein the light-absorbing material layer (200) has a grid shape and an opening therein to expose part of the white pixel area (W-SP). [16] Organic light-emitting display device (100) according to any one of claims 1 to 15, further comprising: a red color filter structure, a green color filter structure and a black matrix structure on one side of the light-absorbing material layer (200). [17] Organic light-emitting display device (100) comprising: a substrate (101) having a red or green first pixel area (R-SP, G-SP) and a white second pixel area (W-SP); an emitting diode (E) on the substrate (101) and corresponding to the first and second pixel areas (R-SP, G-SP; W-SP), wherein the emitting diode (E) emits a white light; a color filter (106a, 106b) in the first pixel area (R-SP, G-SP) and between the substrate (101) and the emitting diode (E); a blue color filter structure (220) on the substrate (101) and under the emitting diode (E), wherein the blue color filter structure (220) is arranged between the first and second pixel regions (R-SP, G-SP; W-SP); and a light-absorbing material layer (200) in the second pixel area (W-SP) and comprising a light-absorbing dye (210), wherein the light-absorbing material layer (200) in an emission region (EA) of every second pixel region (W-SP) has a plurality of light-absorbing material structures spaced apart from each other. [18] Organic light-emitting display device (100) according to claim 17, further comprising: a bank (119) that is arranged between the first and second pixel areas (R-SP, G-SP; W-SP) and covers an edge of a first electrode (111) of the emitting diode (E), with the blue color filter structure (220) overlapping the bank (119). [19] Organic light-emitting display device (100) according to claim 17, wherein the blue color filter structure (220) is arranged between the color filter (106a, 106b) and the light-absorbing material layer (200), and the light-absorbing dye (210) has a main absorption wavelength range of about 500 to 640 nm. [20] Organic light-emitting display device (100) according to claim 1, wherein the majority of pixel areas (R-SP, G-SP, B-SP, W-SP) furthermore have a red pixel area (R-SP), a green pixel area (G-SP) and a blue pixel area (B-SP), and wherein the organic light-emitting display device (100) further comprises a blue color filter structure (220) arranged between the red pixel area (R-SP) or the green pixel area (R-SP) and the white pixel area (W-SP) and between the white pixel area (W-SP) and the blue pixel area (B-SP). [21] Organic light-emitting display device (100) according to claim 17, wherein the substrate (101) further comprises a third pixel area (B-SP), and wherein the blue color filter structure (22) is further arranged between the second pixel area (W-SP) and the third pixel area (B-SP).

Images