Power electronic switching device with one connection element

Abstract

Power electronic switching device (1) with a power semiconductor device (5) arranged on a first conductor track (22) of a substrate (2), with a connecting device (3) connecting this power semiconductor device (5) to a second conductor track (24) of the substrate (2) and comprising a film composite consisting of a first electrically conductive film (30) facing the substrate (2) and the power semiconductor device (10), an electrically insulating film (32) following in the film composite, and a second electrically conductive film (34) further following in the film composite, and with a connection element (6), wherein this connection element has a first contact section (626), wherein this first contact section (626) is connected to a second contact section (306, 346) of the surface (302, 342) of one of the electrically conductive films (30, 34) facing away from the substrate (2).34) is materially bonded and electrically conductive, wherein the connecting element (6) is designed as a sleeve (62) with a contact element (60) arranged therein, itself designed as a pin contact element or press pin contact element, wherein a section of the sleeve (62) facing the substrate (2) forms the first contact section (626).

Description

The invention describes a power electronic switching device with a power semiconductor component arranged on a first conductor track of a substrate, with a connecting device connecting this power semiconductor component to a second conductor track of the substrate and with a terminal element. DE 10 2009 017 733 A1 discloses as prior art a power semiconductor module with at least one power semiconductor device, with a connecting device for contacting this power semiconductor device, comprising a foil composite consisting of at least one first electrically conductive foil facing the power semiconductor device and forming at least one conductor track, and an insulating foil following within the foil composite, and a second foil facing away from the power semiconductor device and forming at least one second conductor track following further within the foil composite. Furthermore, the power semiconductor module has at least one internal connection element, wherein this internal connection element is designed as a contact spring with a first and a second spring contact section and a resilient section.In this case, the first spring contact section has a common contact surface with a first or a second conductor track of the connecting device. DE 10 2012 218 868 B3 discloses a power semiconductor module with a substrate, wherein the power semiconductor module comprises a first and a second DC load current connection element and a first and a second power semiconductor device, and the first and the second power semiconductor device are arranged along a lateral first direction of the substrate, wherein the power semiconductor module comprises a foil composite comprising a first metallic foil layer and a structured second metallic foil layer and an electrically insulating foil layer arranged between the first and the second metallic foil layer, wherein the first power semiconductor device and the second power semiconductor device are electrically conductively connected to the foil composite and to the substrate.wherein the first and second power semiconductor components are arranged on a common side with respect to the first and second DC load current connection components. The invention provides a power semiconductor module that has a particularly low-inductance design. DE 10 2006 015 198 A1 discloses a connection device for the electrically conductive connection of electronic components and a substrate. The connection device is designed as a foil composite consisting of at least one insulating foil and two electrically conductive foils. This foil composite is structured as a layered arrangement of alternating conductive and insulating foils, with at least one conductive foil being structured and thus forming conductive tracks. Furthermore, at least one conductive foil of a main surface of the foil composite consists of a first metal and has at least one foil section with a layer of a second metal that is thinner than the thickness of this first foil. JP 2008-270 527 A discloses a negative electrode, a first gate electrode, a positive electrode, an output electrode, and a second gate electrode to form a line with a predetermined distance. The positive electrode is equipped with a first IGBT chip and a first diode chip. The output electrode is equipped with a second IGBT chip and a second diode chip. The first diode chip and the output electrode are connected by a plate-like output electrode circuit. The first IGBT chip and the first gate electrode are connected by a first plate-like gate electrode circuit; the second IGBT chip and the second electrode are connected by a second plate-like gate electrode circuit. An insulating film is provided to bring its first surface into contact with the plate-like output electrode circuit and the respective plate-like gate electrode circuits.The second IGBT chip, the second diode chip and the negative pole electrode are connected by the negative plate-like electrode circuit, which is designed to be in contact with the second surface opposite the first surface of the insulating film. DE 10 2014 117 762 A1 discloses an electronic component comprising an electrically conductive chip carrier, which includes an electrically insulating core structure that is at least partially covered with electrically conductive material, at least one electronic chip, each of which has a first main surface attached to the chip carrier, and a sheet-shaped redistribution structure attached to a second main surface of the at least one electronic chip and configured to electronically connect the second main surface of the at least one electronic chip to the chip carrier. DE 10 2013 110 812 B3 discloses a method for manufacturing a power semiconductor device with a base plate and a substrate connected to it by means of a solder joint, comprising the following process steps: providing the base plate and the substrate; arranging a further formed metal component on a connecting surface of the base plate or the substrate, wherein this further formed metal component has particles introduced from a surface, these particles having a minimum diameter that corresponds to between 80% and 100% of the thickness of the subsequent solder joint; arranging the base plate relative to the substrate, wherein the further formed metal component is positioned between the connecting surfaces;Temperature application with a connection temperature higher than the melting temperature of the metal component, whereby the metal component melts, the particles penetrate the molten metal component and a solder joint is formed. In light of the aforementioned prior art, the invention aims to present an alternative design of the connecting element. This problem is solved according to the invention by a power electronic switching device with a power semiconductor device arranged on a first conductor track of a substrate, with a connecting device connecting this power semiconductor device to a second conductor track of the substrate, comprising a film composite consisting of a first electrically conductive film facing the substrate and the power semiconductor device, an electrically insulating film following in the film composite, and a second electrically conductive film further following in the film composite, and with a connection element, wherein this connection element has a first contact section, wherein this first contact section is materially and electrically connected to a second contact section of the surface facing away from the substrate of one of the electrically conductive films, and wherein the connection element is a sleeve with a contact element arranged therein.It is designed as a pin contact element or press pin contact element, wherein a section of the sleeve facing the substrate forms the first contact section. On the one hand, it is useful for explaining the invention if the second contact section is arranged on the surface of the first electrically conductive film facing away from the substrate and is arranged in a recess of all subsequent films in the film assembly. In principle, it is preferred if the respective thickness of the electrically conductive film is between 10 µm and 500 µm, preferably between 50 µm and 250 µm, and if the thickness of the electrically insulating film is between 2 µm and 200 µm, preferably between 10 µm and 100 µm. On the one hand, it may be preferable if the connection element is designed as a pin contact element or as a press pin contact element. Naturally, unless explicitly excluded, the features mentioned in the singular, in particular the power semiconductor component and the connection element, can also be present multiple times in the power electronic switching device according to the invention. The contact element can be arranged with a section in the sleeve and connected to it in a force-fit and electrically conductive manner. The sleeve can also have a hollow cylindrical or cup-shaped base form, preferably with an additional, preferably structured, rim region. It is also preferred if the material-jointed connection is formed as a soldered joint or as a welded joint, in particular as a laser welded joint, or as a sintered joint or as an adhesive joint. Additionally, it can be advantageous if a partial housing or a housing surrounds or encloses the substrate, with the connecting element protruding through a housing recess with a section from the housing or partial housing. It is understood that the various embodiments of the invention can be implemented individually or in any combination to achieve improvements. In particular, the features mentioned and explained above and below can be used not only in the combinations specified, but also in other combinations or individually, without departing from the scope of the present invention. Further explanations of the invention, advantageous details and features, will become apparent from the following description of the embodiments of the invention, or of respective parts thereof, schematically illustrated in Figures 1, 2, 3, 4, 5 to 6. Figure 1 shows a side view of a power electronic switching device according to the prior art. Figure 2 shows a side view of a first embodiment of a power electronic switching device that serves to illustrate the invention. Figure 3 shows a side view of a second embodiment of a power electronic switching device that serves to illustrate the invention. Figure 4 shows a side view of a third embodiment of a power electronic switching device that serves to illustrate the invention. Figure 5 shows a side view of an embodiment of a power electronic switching device according to the invention.Figure 6 shows a sleeve of the inventive embodiment of the power electronic switching device. Figure 1 shows a side view of a prior art power electronic switching device 1. This switching device 1 has a substrate 2 with an insulating body 20 and conductive traces 22, 24 arranged thereon. A power semiconductor device 5 is arranged on a first conductive trace 22 of a substrate 2 and electrically connected to its contact surface 50 facing the first conductive trace. This electrically conductive connection is, without limitation of generality, designed here as a metallurgical pressure-sintered connection 40. The power semiconductor device 5, more precisely its contact surface 52 facing away from the substrate, is connected to a second conductor track 24 of the substrate 2 by means of a connection device 3. This connection device 3 is designed as a film composite consisting of a first electrically conductive film 30 facing the substrate 2 and the power semiconductor device 5, an electrically insulating film 32 following within the film composite, and a second electrically conductive film 34 further following within the film composite. The power electronic switching device further comprises a connection element 6, more precisely an auxiliary connection element, for guiding auxiliary potentials, such as sensor or control signals. This connection element is designed as a spring element 7. The base of this spring element 7 has a force-fit connection to a contact section on the surface 302 of the first electrically conductive film 30 facing away from the substrate 2. Fig. 2 shows a side view of a first embodiment of a power electronic switching device 1 that serves to illustrate the invention. The substrate 2 together with the power semiconductor component 5, as well as the design of the connection device 3, basically correspond to the prior art, as described under Fig. 1. The connecting device 3, designed as a film composite, has a first and second electrically conductive film 30,34 with a thickness of 200 µm each and an electrically insulating film 32 with a thickness of 80 µm. The connection element 6, again an auxiliary connection element, is designed here as a pin contact 600 for plug-in or solder connection with corresponding components of a control board (not shown) for controlling the power electronic switching device 1. For connection with the connection device 3, the connection element 6 has a base element 604, which is materially bonded to the second electrically conductive film by means of a solder connection 420. Here, a first contact section 606 of the connection element 6, facing the substrate 2, is electrically connected by means of this solder connection 420 to a second contact section 346 on the surface 342 of the second electrically conductive film 34, facing away from the substrate 2. Fig. 3 shows a side view of a second embodiment of a power electronic switching device 1 that serves to illustrate the invention. The substrate 2 together with the power semiconductor component 5, as well as the design of the connection device 3, basically correspond to those described under Fig. 2. In contrast, the foil assembly of the connecting device 3 has a recess 310 above the second conductor track 24 of the substrate 2. This recess encompasses both the electrically insulating and the second electrically conductive foil 32, 34, thus providing access to the first conductive foil 30. The connection element 6 is arranged on the surface 302 of the first electrically conductive foil 30 facing away from the substrate 2. This element is designed as a press-pin contact element 602. The second contact section 606 of this press-pin contact element 602 is electrically conductively and metallurgically connected to the first contact section 306 on the surface 302 of the first electrically conductive foil 30 facing away from the substrate 2 by means of a laser weld 424. The laser weld 424 preferably extends not only into the first electrically conductive foil 30, but also into the second conductor track 24. Fig. 4 shows a side view of a third embodiment of a power electronic switching device 1, which serves to illustrate the invention. The substrate 2 is again of a generally conventional type. A power semiconductor device 5 is arranged on the first conductor track 22. This power semiconductor device 5 has two contact surfaces 52 on its side facing away from the substrate 2, one of which is designed as a control contact surface. Both, and in particular the control contact surface, are arranged on a contact metallization 520, which is significantly thicker compared to the prior art. The layer thickness of the contact metallization 520 is approximately 50 µm. Advantageous thicknesses are at least 30 µm up to 400 µm. The first electrically conductive film 30 is connected to the contact surface 52 of the contact metallization 520 of the power semiconductor device 5 by means of a sintered connection. In line with the aforementioned contact metallization 52, on the surface 302 of the first electrically conductive film 30 facing away from the substrate 2, this film is connected to the second contact section 606 of the connecting element 6 in a first contact section 306 by means of a sintered connection 422. For this purpose, the electrically insulating and the second electrically conductive film 32, 34 again have a common recess 310. The connecting element 6 itself is again designed as a press-pin contact element 602. Fig. 5 shows a side view of an embodiment of a power electronic switching device 1 according to the invention. The substrate 2 together with the power semiconductor component 5, as well as the design of the connection device 3, basically correspond to that described in Fig. 3. In contrast, the connecting element 6 is designed as a cup-shaped sleeve 62 with a contact element 60 arranged therein. The contact element 60 itself is designed as a press-fit contact element. The contact element 60 is arranged with a section in the sleeve 62 and is connected to it in a force-fit and electrically conductive manner. A section of the sleeve 62 facing the substrate 2 has the first contact section 626, see Fig. 6. This first contact section of the sleeve 62 is materially bonded to the surface 302 of the first electrically conductive film 30 facing away from the substrate 2 by means of a sintered bond 422. Additionally, but only in one section, a housing 7 is shown that encloses the substrate 2. The housing 7 has a recess 70 through which the connecting element 6 protrudes from the housing 7. Fig. 6 shows a sleeve of the inventive embodiment of the power electronic switching device. A hollow cylindrical sleeve 62 with a hollow cylindrical section and an additional edge region 624, which has a structure 628, is shown. This structured edge region 624 is designed and intended to be metallurgically bonded to a surface of an electrically conductive film of the connecting device facing away from the substrate by means of a solder joint.

Claims

Power electronic switching device (1) with a power semiconductor device (5) arranged on a first conductor track (22) of a substrate (2), with a connecting device (3) connecting this power semiconductor device (5) to a second conductor track (24) of the substrate (2) and comprising a film composite consisting of a first electrically conductive film (30) facing the substrate (2) and the power semiconductor device (10), an electrically insulating film (32) following in the film composite, and a second electrically conductive film (34) further following in the film composite, and with a connection element (6), wherein this connection element has a first contact section (626), wherein this first contact section (626) is connected to a second contact section (306, 346) of the surface (302, 342) of one of the electrically conductive films (30, 34) facing away from the substrate (2).34) is materially bonded and electrically conductive, wherein the connecting element (6) is designed as a sleeve (62) with a contact element (60) arranged therein, itself designed as a pin contact element or press pin contact element, wherein a section of the sleeve (62) facing the substrate (2) forms the first contact section (626). Switching device according to claim 1, wherein the first contact section (626) is arranged on the surface (302) of the first electrically conductive film (30) facing away from the substrate (2) and is arranged in a recess (310) of all subsequent films in the film assembly. Switching device according to one of the preceding claims, wherein the respective thickness of the electrically conductive film (30, 34) is between 10 µm and 500 µm, preferably between 50 µm and 250 µm, and the thickness of the electrically insulating film (32) is between 2 µm and 200 µm, preferably between 10 µm and 100 µm. Switching device according to one of the preceding claims, wherein the contact element (60) is arranged with a section in the sleeve (62) and is connected to it in a force-fit and electrically conductive manner. Switching device according to one of the preceding claims, wherein the sleeve (62) has a hollow cylindrical or cup-shaped basic form, preferably with an additional, preferably structured, edge region (624). Switching device according to one of the preceding claims, wherein the material-jointed connection is formed as a solder joint (420) or as a welded joint, in particular as a laser welded joint (422), or as a sintered joint (424) or as an adhesive joint. Switching device according to one of the preceding claims, wherein a partial housing or a housing (7) surrounds or encloses the substrate (2) and wherein the connecting element (6) protrudes through a housing recess (70) with a section from the housing (7) or the partial housing.

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