Power semiconductor device and manufacturing method therefor

By forming epitaxial layers and doped regions of different conductivity types on a substrate, and using epitaxial growth to set a second epitaxial layer, the problem of low mobility in trench MOSFETs is solved, enabling the fabrication of high-performance power semiconductor devices, reducing costs and time, and improving device reliability and withstand voltage performance.

WO2026112766A1PCT designated stage Publication Date: 2026-06-04HUNAN SANAN SEMICON CO LTD
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
HUNAN SANAN SEMICON CO LTD
Filing Date
2024-11-26
Publication Date
2026-06-04

AI Technical Summary

Technical Problem

How to obtain high-performance trench MOSFETs, especially to improve their mobility, so that they can be used in electronic devices in high-power, high-frequency and high-temperature environments.

Method used

By forming a first epitaxial layer and a second epitaxial layer with different conductivity types on a substrate, and forming a doped region in the second epitaxial layer, the second epitaxial layer is set by using an epitaxial growth method to reduce the implantation dose of the doped region and reduce the scattering effect. The conductive channel is formed by combining etching and ion implantation processes.

Benefits of technology

It improves the mobility of power semiconductor devices, reduces device manufacturing time and cost, and enhances device reliability and withstand voltage performance.

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Abstract

Provided in the present invention are a power semiconductor device and a manufacturing method therefor. The power semiconductor device comprises: a substrate, an epitaxial layer, a first doped region and a second doped region which have opposite conductivity types, a gate electrode, an electrode layer, and an insulating medium. The epitaxial layer is configured with a trench, and comprises a first epitaxial layer and a second epitaxial layer which have opposite conductivity types, wherein the first epitaxial layer is arranged between the second epitaxial layer and the substrate, and the trench penetrates through the second epitaxial layer and partially extends into the first epitaxial layer. The first doped region is formed in the second epitaxial layer and located on two opposite sides of the trench. The second doped region extends from the second epitaxial layer through an interface between the second epitaxial layer and the first epitaxial layer, partially extends into the first epitaxial layer, is located on the two opposite sides of the trench, and connects the first doped region to the first epitaxial layer so as to form a conductive channel. By means of epitaxially growing the second epitaxial layer on the first epitaxial layer, the implantation dosage for subsequently forming the second doped region, which has the same conductivity type as the second epitaxial layer, can be reduced so as to weaken the scattering effect, thus improving mobility.
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Citation Information

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