Semiconductor device with cell region, method for generating a layout diagram and system for the same

Abstract

Semiconductor device comprising: first, second, and third active regions (207, 208), wherein the first and third active regions (207, 208) have a first conductive configuration, the second active region (207, 208) has a second conductive configuration, and the first, second, and third active regions (207, 208) have corresponding long axes extending substantially in a first direction; wherein the second active region (207, 208) is located between the first and third active regions (207, 208) relative to a second direction that is substantially perpendicular to the first direction; first and second gate structures (214, 215, 216) having corresponding long axes extending substantially in the second direction; wherein the first gate structure (214, 215, 216) is located over the first active region (207, 208) and at least a first section of the second active region (207, 208) extends;wherein the second gate structure (214, 215, 216) extends over the third active region (207, 208) and at least a second section of the second active region (207, 208); wherein a first cell region (102) comprises the first gate structure (214, 215, 216), the first active region (207, 208) and the first section of the second active region (207, 208); wherein a second cell region (102) comprises the second gate structure (214, 215, 216), the third active region (207, 208) and the second section of the second active region (207, 208); wherein, relative to the second direction, a first boundary region (228), which represents an overlap of the first and second cell regions (102), is substantially aligned along an approximate midline of the second active region (207, 208); and where, relative to the second direction: the second gate structure (214, 215, 216) overlaps the first border region (228);and the first gate structure (214, 215, 216) does not extend to the first boundary region (228), wherein: the first active region (207, 208) represents a first section of a fourth active region (207, 208), the fourth active region (207, 208) having the first conductive configuration; the semiconductor device further comprising: a third cell region (102) having a second section of the fourth active region (207, 208); and relative to the second direction: an approximate midline of the fourth active region (207, 208) representing a second boundary region (228) located between the first and third cell regions (102); and the first gate structure (214, 215, 216) which does not extend to the second boundary region (228).

Description

GENERAL STATE OF THE ARTAn integrated circuit ("IC") includes one or more semiconductor devices. One way to present a semiconductor device is a plan view diagram referred to as a layout diagram. Layout diagrams are generated in a context of design rules. A set of design rules imposes constraints on the placement of corresponding structures in a layout diagram, e.g., geographic / spatial constraints, connectivity constraints, or the like. Often, a set of design rules includes a subset of design rules that relate to the distances and other interactions between structures in adjacent or touching cells, where the structures represent conductors in a metallization layer.Typically, a set of design rules is specific to a process technology node by which a semiconductor device based on a layout diagram. The design rule set compensates for the variability of the corresponding process technology node. Such compensation increases the likelihood that an actual semiconductor device arising from a layout diagram is an acceptable counterpart to the virtual device on which the layout diagram is based.The prior art relating to the subject matter of the invention can be found, for example, in the publications KR 10 2017 0 023 358 A and KR 10 1 821 460 B1.The invention is defined by the main claim and the subordinate claims. Further embodiments of the invention are set forth in the dependent claims.BRIEF DESCRIPTION OF THE DRAWINGSAspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying figures. It is noted that various features corresponding to the industry's standard method are not drawn to scale. The dimensions of the various characteristics can actually be arbitrarily increased or decreased to make the explanation clearer. FIG. 1 is a block diagram according to some embodiments. FIGS. 2A-2H are corresponding layout diagrams 200A-200H, in accordance with some embodiments. FIGS. 3A through 3C are corresponding layout diagrams 200A through 300C, in accordance with some embodiments. FIGS. 4A-4B are corresponding cross-sectional views 400A-400H, in accordance with some embodiments. FIG. 5 is a flow diagram of a method according to some embodiments. FIGS. 6A-6F correspond to flowcharts of corresponding methods, in accordance with some embodiments. FIG. 7 is a block diagram of an electronic design automation (EDA) system, in accordance with some embodiments. FIG. 8 is a block diagram of an integrated circuit (IC) manufacturing system and an IC manufacturing process associated therewith, in accordance with some embodiments.DETAILED DESCRIPTIONThe following disclosure provides many different embodiments or examples for implementing different functions of the stated content. Specific examples of components, values, operations, materials, arrangements, or the like are described below to simplify the present disclosure. Other components, values, operations, materials, arrangements, or the like are contemplated. For example, forming a first feature or a second feature in the following description may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which further features may be formed between the first and second features such that the first and second features need not be in direct contact. Further, the present disclosure may repeat reference numerals and / or letters in the various examples. This repetition is for convenience and clarity and does not in itself dictate a relationship between the various embodiments and / or configurations discussed.Further, spatially relative terms such as "below," "below," "lower," "above," "upper," and the like may be used herein for ease of description to describe the relationship of an element or feature to one or more other element(s) or feature(s) as illustrated in the figures. The spatially relative terms should include various orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative identifiers used herein may also be appropriately designed.In some embodiments, a semiconductor device includes a cell region including at least one active region adjacent to a boundary. In some embodiments, a method and system for generating the same is provided. In some embodiments, such a method assumes that rows and fin structures of a layout diagram extend substantially parallel to the X-axis (in the horizontal direction), and the gate structures of the layout diagram extend substantially parallel to the Y-axis (in the vertical direction). In some embodiments, such a method further assumes a library of standard cells comprising first and second single row high (SRH) standard cells, wherein the first SRH standard cell comprises a fin pair (hereafter a 'single-fin cell'), and the second SRH standard cell comprises two pairs (hereafter a 'dual-fin cell'), each fin pair comprising a fin structure intended for the PMOS configuration and a fin structure intended for the NMOS configuration. In some embodiments, such a method further assumes, relative to the vertical direction, that a first cell is adjacent to (or stacked on) a second cell, and that a first gate structure of the first cell does not overlap the second gate structure of the second cell, such that respective first and second gate electrodes (respective first and second cell regions in a semiconductor device based on the layout diagram) are not electrically coupled.According to another approach, relative to the vertical direction to improve electrical isolation, neither the first gate structure nor the second gate structure may overlap a fin structure that extends beyond the boundary of the first and second cells, resulting in each of the in-fin and in-fin cells having a height corresponding to 5TP, where TP represents a track pitch. As a result of the design rule according to the other approach, a cut pattern is created over the overlapping fin structure (to indicate the subsequent removal of the overlapping fin structure) or the overlapping fin structure is intended for configuration as a dummy fin, which wastes the space occupied by the overlapping fin at the top and bottom of each of the in-fin and bi-fin cells, and further wastes the space in the in-fin cell that would otherwise have been occupied by the second pair of fins. In contrast, in at least some embodiments, one of the first and second gate structures may overlap (or confine) the overlapping fin structure and electrically couple to the overlapping fin structure such that a corresponding one of the respective first and second gate electrodes (the corresponding first and second cell regions in a semiconductor device based on the layout diagram) is electrically coupled to the respective overlapping fin, resulting in an improved cell density and a corresponding layout diagram density compared to the other approach. According to at least some embodiments, each of the in-house and in-house cells has a height of 3TP, which represents a reduction in height of 2 / 5 compared to the other approach.FIG. 1 is a block diagram of a semiconductor device 100, according to some embodiments.In FIG. 1, the semiconductor device 100 includes, among other things, a circuit macro (hereinafter, macro) 101. In some embodiments, the macro 101 is a logic macro. In some embodiments, the macro 101 is an SRAM macro. In some embodiments, the macro 101 is a macro other than a logic macro or an SRAM macro. The macro 101 includes, among other things, one or more cell regions 102 arranged in corresponding rows 104( 1) to 104( 2). In some embodiments, each cell region 102 is implemented based on a layout diagram arising from one or more of the methods disclosed herein, and thus has an improved cell region density.FIGS. 2A through 2B are corresponding layout diagrams 200A through 200B, in accordance with some embodiments.FIGS. 2A to 2B assume an XYZ orthogonal coordinate system in which the X-axis, Y-axis, and Z-axis represent respective first, second, and third directions. In some embodiments where a side of the print medium represents a plane, such as a piece of paper, Figures 2A-2B assume that the X axis and the Y axis are coplanar with a side and the Z axis are orthogonal to the plane of the side. In some embodiments, the first, second, and third directions correspond to an orthogonal coordinate system other than the XYZ coordinate system.Layout diagrams 200A- 200B are arranged with respect to the trace lines, including trace lines 205( 1), 205( 2), 205( 3),..., 205( 10), 205( 11), and 205( 12) aligned substantially parallel to the X axis. The traces 205( 1) to 205( 12) have a pitch, TP, determined by the design rules and the magnitude of the corresponding semiconductor process technology node. Layout diagrams 200A- 200B are also arranged with respect to the rows, including rows 204( 1), 204( 2), and 204( 3) aligned substantially parallel to the X axis. Relative to the Y axis, each row has a height of 3TP. In some embodiments, the rows have a different height than 3TP. Accordingly, for a library of standard cells associated with the corresponding semiconductor process technology node, a single row height (SRH) standard cell has a height of 3TP, which results in a 2 / 5 decrease in height compared to the other approach.In FIG. 2A, layout diagram 200A includes substrate structure 206( 1) and cells 210( 1) and 211( 1) respectively on substrate structure 206( 1). Each of 210(1) and 211(1) is a standard SRH cell. Each of cells 210( 1) and 211( 1) is located in row 204( 2). Layout diagram 200A further includes cells 212( 1) and 212( 2), each of which is partially shown for ease of illustration. Relative to the Y axis: cell 212( 1) is located in row 204( 1) such that the bottom thereof abuts (or is stacked on) the top of cell 211( 1); and cell 212( 2) is located in row 204( 3) such that the top thereof abuts (or is stacked below) the bottom of cell 211( 1).In some embodiments, cell 210( 1) represents a first subset of one or more of cell regions 102 in semiconductor device 100 of FIG. 1, and cell 211( 1) represents a second subset of one or more of cell regions 102 in semiconductor device 100 of FIG. 1. Although not shown for ease of illustration, in some embodiments layout diagram 200A includes further instances of cell 210( 1), and / or further instances of cell 211( 1), and / or further instances of cells 212( 1) and / or 212( 2).Layout diagram 200A further includes active region structures having respective long axes extending substantially parallel to the X axis. For example, cell 210( 1) includes active region structures 207N( 1) and 207P( 1) substantially provided with corresponding traces 205( 6) and 205( 7).Active region structures 207N( 1) and 207P( 1) represent respective NMOS and PMOS planar active regions in a semiconductor device based on layout diagram 200A. Accordingly, active region structures 207N( 1) and 207P( 1) are provided for respective planar NMOS and PMOS transistor configurations. In some embodiments, active region structures 207N( 1) and 207P( 1) are provided for respective planar transistor configurations except for respective planar NMOS and PMOS transistor configurations. In some embodiments, each of the active region structures 207N( 1) and 207P( 1) is respectively represented by one or more fin structures (see FIG. 2B ). In some embodiments, active region structures 207N( 1) and 207P( 1) are illustrated for nanowire configurations. In some embodiments, the active region structures 207N( 1) and 207P( 1) are provided for the nanosheet configuration. In some embodiments, active region structures 207N( 1) and 207P( 1) are provided for a gate all around (GAA) configuration. In some embodiments, where an active region is referred to as an oxide-sized (OD) region, the active region structures 207N( 1) and 207P( 1) are referred to as corresponding OD structures 207N( 1) and 207P( 1). Cell 211( 1) includes active region structures 207N( 2) and 207P( 2).Cell 212( 1) includes active region structure 207N( 3). Relative to the vertical direction, active region structure 207N( 3) abuts active region structure 207N( 2), such that active region structures 207N( 2) and 207N( 3) represent respective first and second portions of a larger active region structure that is respectively shared by cell 211( 1) and cell 212( 1). When active region structures 207N( 2) and 207N( 3) abut each other, a boundary region 227( 1) is formed, a long axis of which is substantially aligned with the upper boundary of cell 211( 1) and the lower boundary of cell 212( 1). Boundary region 227( 1) sits over an upper region of cell 211( 1) and a lower region of cell 212( 1). Practically, the long axis of the boundary region 227( 1) is also substantially aligned with an approximate centerline of the larger active area structure that includes active area structures 207N( 2) and 207N( 3).Cell 212( 2) includes active region structure 207P( 2). Relative to the vertical direction, active region structure 207P( 3) abuts active region structure 207P( 2), such that active region structures 207P( 2) and 207P( 3) represent respective first and second portions of a larger active region structure that is respectively shared by cell 211( 1) and cell 212( 2). When active region structures 207P( 2) and 207P( 3) abut each other, a boundary region 227( 2) is formed, a long axis of which is substantially aligned with the lower boundary of cell 211( 1) and the upper boundary of cell 212( 2). Boundary region 227( 2) sits over a bottom portion of cell 211( 1) and a top portion of cell 212( 1). Practically, the long axis of the boundary region 227( 2) is also substantially aligned with an approximate centerline of the larger active area structure that includes active area structures 207P( 2) and 207P( 3).In FIG. 2A, cell 210( 1) includes gate structure 214( 1) and cell 211( 1) includes gate structure 215( 1). Long axes of the respective gate structures 214( 1) and 215( 1) extend substantially parallel to the Y axis. Relative to the Y-axis, gate structure 214( 1) overlaps active region structures 207N( 1) and 207P( 1). Relative to the Y axis, there is a column 222( 1) between an upper end of gate structure 214( 1) and the upper boundary of cell 210( 1); and a column 222( 2) between a lower end of gate structure 214( 1) and the lower boundary of cell 210( 1). Relative to the Y-axis, gate structure 215( 1) overlaps active region structures 207N( 2) and 207P( 2), and further extends to overlap boundary regions 227( 1) and 227( 2). Thus, gate structure 215( 1) engages (or engages) active region structure 207N( 3) of cell 212( 1). For ease of illustration, each of cells 210( 1) and 211( 1) is shown to include a gate structure. In some embodiments, cell 210( 1) and / or 211( 1) includes a plurality of gate structures separated from each other along the X-axis. Relative to the X-axis, the gate structures are separated by a uniform distance. In some embodiments, the uniform distance represents a Contacted Poly Pitch (CPP) for the corresponding semiconductor process technology node.Cells 210( 1) and 211( 1) represent corresponding circuits. In some embodiments, cells 210( 1) and 211( 1) represent respective circuits that represent respective functions. In some embodiments, cells 210( 1) and 211( 1) represent respective circuits representing respective logic functions, and are respectively referred to as logic cells. In some embodiments, at least one of cells 210( 1) and 211( 1) represents corresponding circuits representing corresponding functions other than a logical function.Referring to FIG. 2B, layout diagram 200B is similar to layout diagram 200A. Figure 2B follows a similar numbering convention as Figure 2A. However, some components are also accordingly different. To help identify components that match but still have differences, the numbering convention uses numbers in brackets. For example, structure 206( 2) in FIG. 2B and structure 206( 1) in FIG. 2A are both substrate structures, with similarities reflected in the common root 206( _), and where the differences are reflected in the brackets __( 1) and __( 2). For the sake of brevity, the explanation focuses more on differences between FIGS. 2B and 2A than on similarities.In FIG. 2B, fin structures have been used to depict corresponding active region structures of FIG. 2A. More specifically, fin structures 208N( 1) and 208P( 1) in cell 210( 2) of FIG. 2B have been used to represent corresponding active region structures 207N( 1) and 207P( 1) in corresponding cell 210( 1) of FIG. 2A. Fin structures 208N( 4) and 208N( 3) in cell 211( 1) of FIG. 2B have been used to represent active region structure 207N( 2) in corresponding cell 211( 1) of FIG. 2A. Fin structures 208P( 2) and 208P( 3) in cell 211( 1) of FIG. 2B have been used to represent active region structure 207P( 2) in corresponding cell 211( 1) of FIG. 2A. Fin structures 208N( 2) and 208N( 3) in cell 212( 3) of FIG. 2B have been used to represent active region structure 207N( 3) in corresponding cell 212( 1) of FIG. 2A. Fin structures 208P( 3) and 208P( 4) in cell 212( 4) of FIG. 2B have been used to represent active region structure 207P( 3) in corresponding cell 212( 2) of FIG. 2A.Cell 210( 2) is the SRH standard cell and is also described as a single fin cell having a fin pair. Cell 211(2) is the SRH standard cell and is also described as a dual fin cell having two fin pairs. In some embodiments, each pair of fins includes a fin structure predetermined for the NMOS configuration and a fin structure predetermined for the PMOS configuration.In FIG. 2B, fin structures 208N( 1)- 208N( 4) and 208P( 1)- 208P( 4) represent corresponding NMOS and PMOS fins in a semiconductor device based on layout diagram 200B. Accordingly, the active region structures are provided with fin structures 208N( 1)- 208N( 4) and 208P( 1)- 208P( 4) for a corresponding NMOS finFET and PMOS finFET configuration. In some embodiments, the active region structures are provided with fin structures 208N( 1) to 208N( 4) and 208P( 1) to 208P( 4) for a corresponding PMOS finFET and NMOS finFET configuration. In some embodiments, fin structures 208N( 1) to 208N( 4) and 208P( 1) to 208P( 4) are provided for nanowire configuration. In some embodiments, fin structures 208N( 1) to 208N( 4) and 208P( 1) to 208P( 4) are provided for the nanosheet configuration. In some embodiments, the fin structures 208N( 1) to 208N( 4) and 208P( 1) to 208P( 4) are provided for a gate all around (GAA) configuration. In some embodiments, sets of fin structures other than the sets of FIG. 2B are included in corresponding cells 210( 2), 211( 2), 212( 3), and 212( 4).In layout diagram 200B, cell 212( 3) further includes a gate structure 217( 1) extending sufficiently far towards a lower boundary of cell 212( 3) to overlap fin structure 208N( 2). Cell 212( 4) further includes a gate structure 217( 2) extending sufficiently far towards an upper boundary of cell 212( 4) to overlap fin structure 208P( 4). Relative to the Y axis, there are: a gap 226( 1) between an upper end of the gate structure 215( 2) and a lower end of the gate structure 217( 1); and a gap 226( 2) between a lower end of the gate structure 215( 2) and an upper end of the gate structure 217( 2).Boundary region 227( 3), which is over an upper region of cell 211( 2) and a lower region of cell 212( 3), also sits over fin structure 208N( 3). Boundary region 227( 4) that sits over a bottom portion of cell 211( 2) and a top portion of cell 212( 4) also sits over fin structure 208P( 3). In contrast, according to the other approach, no gate structure may overlap fin structure 208N( 3) overlying the top portion of cell 211( 2) and the bottom portion of cell 212( 3), and no gate structure may overlap fin structure 208P( 3) overlying the bottom portion of cell 211( 2) and the top portion of cell 212( 4). Effectively, fin structure 208N( 3) is shared by cells 211( 2) and 212( 3), and fin structure 208P( 3) is shared by cells 211( 3) and 212( 4). By overlapping the fin structure 208N( 3), the gate structure 215( 2) of cell 211( 2) engages the cell 213( 3). By overlapping the fin structure 208P( 3), the gate structure 215( 2) of cell 211( 2) engages the cell 213( 4). By engaging each of cells 212(3) and 212(4), cell 211(2) provides a dual-fin cell that has a single-line height (SRH) so that no space is wasted as would be the case in the other approach. Each of the cells 210( 2) and 211( 2) has a height of 3TP, which represents a decrease in height of 2 / 5 compared to the other approach.FIGS. 2C through 2H are corresponding layout diagrams 200C through 200H, in accordance with some embodiments.Layout diagrams 200C- 200H are similar to layout diagram 200B of FIG. 2B. Figures 2C-2H follow a similar numbering convention as Figure 2B. However, some components are also accordingly different. To help identify components that match but still have differences, the numbering convention uses numbers in brackets. For example, cell 211( 3) in FIG. 2C and cell 211( 2) in FIG. 2B are both two-fin cells, with similarities reflected in the common root 211( _), and where the differences are reflected in the brackets __( 3) and __( 2). For the sake of brevity, the explanation focuses more on differences between FIGS. 2C to 2H and 2B rather than similarities, and on differences between FIGS. 2C to 2H than similarities. Some similar elements in FIGS. 2C-2H have been eliminated for ease of illustration, and for example, substrate structure 206( 2) and trace lines 205( 1)-205( 12) are not shown in FIGS. 2C-2H.In FIG. 2C, layout diagram 200C includes fin structures 208P( 5) to 208P( 10) and 208N( 5) to 208N( 7), and gate structures 218( 1), 214( 3), 215( 3), and 219( 1) in corresponding cells 212( 5), 210( 3), 211( 3), and 212( 6). Subcell 212( 5), in-fin cell 210( 3), bi-fin cell 211( 3), and subcell 212( 6) are located in corresponding rows 204( 4), 204( 1), 204( 2), and 204( 3). Relative to the Y axis, cell 212(5) is placed so that its bottom surface abuts (or is stacked on) the top surface of cell 210(3) at boundary region 228(1); cell 210(3) is placed so that the bottom surface thereof abuts (2) the top surface of cell 211(3) at boundary region 228(2); and cell 211(3) is placed so that the bottom surface thereof abuts (6) the top surface of cell 212(6) at boundary region 228(3).Relative to the Y axis, there are: a column 226( 3) between a lower end of the gate structure 218( 1) and an upper end of the gate structure 214( 3); a column 226( 4) between a lower end of the gate structure 214( 4) and an upper end of the gate structure 214( 3); and a column 226( 5) between a lower end of the gate structure 214( 3) and an upper end of the gate structure 219( 1).The lower end of gate structure 217( 3) extends to the lower boundary of cell 212( 5) sufficiently far to overlap fin structure 208P( 6). The top end of gate structure 215( 3) extends to the upper boundary of cell 211( 3) sufficiently far to overlap fin structure 208N( 6). The lower end of gate structure 215( 3) extends to the lower boundary of cell 211( 3) sufficiently far to overlap fin structure 208P( 9).Boundary region 228( 1) sits over fin structure 208P( 6). Boundary region 228( 2) sits over fin structure 208N( 6). Boundary region 228( 3) sits over fin structure 208P( 9). In contrast, according to the other approach, no gate structure may overlap fin structure 208P( 6), fin structure 208N( 6), or fin structure 208P( 9). By engaging each of cells 210(3) and 212(6), cell 211(3) provides a dual fin cell that has a single line height (SRH) so that no space is wasted as would be the case in the other approach. Each of the cells 210( 3) and 211( 3) has a height of 3TP, which represents a decrease in height of 2 / 5 compared to the other approach. Similarly, by engaging cell 210( 3), cell 212( 5) avoids the waste of space that occurs after the other approach.In some embodiments, the fin structure 208P( 6) is not included, such that the fin structure 208P( 6) is optional, as indicated by the dashed outline of the fin structure 208P( 6). Accordingly, in some embodiments where fin structure 208P( 6) is not included, portion 218( 1) of gate structure 217( 3) is not included, such that portion 218( 1) is optionally as indicated by the dashed outline of portion 218( 1).Referring to FIG. 2D, layout diagram 200D includes fin structures 208P( 11) to 208P( 16) and 208N( 8) to 208N( 10), and gate structures 219( 2), 216( 1), 215( 4) and 219( 3) in corresponding cells 212( 7), 213( 1), 211( 4) and 212( 8). Subcell 212( 7), cell 213( 1), bi-fin cell 211( 4), and subcell 212( 8) are located in corresponding rows 204( 4), 204( 1), 204( 2), and 204( 3). Relative to the Y axis, cell 212(7) is placed so that its bottom surface abuts (or is stacked on) the top surface of cell 213(1) at boundary region 228(4); cell 213(1) is placed so that the bottom surface thereof abuts (or is stacked on) the top surface of cell 211(4) at boundary region 228(5); and cell 211(4) is placed so that the bottom surface thereof abuts (or is stacked on) the top surface of cell 212(8) at boundary region 228(6).In FIG. 2D, cell 213( 1) is the standard SRH cell and is also described as a 1.5 fin cell, and thus has 1.5 fin pairs. Cell 213( 1) includes a full fin pair and a half fin pair. The full pair corresponds to fin structures 208P( 13) and 208N( 8). Half of the fin pair corresponds to the fin structure 208P( 12).Relative to the Y axis, there are: a gap 226( 6) between a lower end of the gate structure 219( 2) and an upper end of the gate structure 216( 1); a gap 226( 7) between a lower end of the gate structure 216( 1) and an upper end of the gate structure 215( 4); and a gap 226( 8) between a lower end of the gate structure 215( 4) and an upper end of the gate structure 219( 3).The top end of gate structure 216( 1) extends to the upper boundary of cell 213( 1) sufficiently far to overlap fin structure 208P( 12). The top end of gate structure 215( 4) extends to the upper boundary of cell 211( 4) sufficiently far to overlap fin structure 208N( 9). The lower end of gate structure 215( 4) extends to the lower boundary of cell 211( 4) sufficiently far to overlap fin structure 208P( 15).Boundary region 228( 4) overlies fin structure 208P( 12). Boundary region 228( 5) sits over fin structure 208N( 9). Boundary region 228( 6) sits over fin structure 208P( 15). In contrast, according to the other approach, no gate structure may overlap fin structure 208P( 12), fin structure 208N( 9), or fin structure 208P( 15). By engaging cell 212( 7), cell 213( 1), a 1.5 fin cell is ready that has a single line height (SRH) so that no space is wasted as would be the case in the other approach. By engaging each of cells 213(1) and 212(8), cell 211(4) provides a dual-fin cell that has a single-line height (SRH) so that no space is wasted as would be the case in the other approach. Each of the cells 213( 1) and 211( 3) has a height of 3TP, which represents a decrease in height of 2 / 5 compared to the other approach.Referring to FIG. 2E, layout diagram 200E includes fin structures 208P( 17) to 208P( 22) and 208N( 11) to 208N( 13), and gate structures 217( 4), 216( 2), 216( 3), and 219( 4) in corresponding cells 212( 11), 213( 2), 213( 3), and 212( 10). Subcell 212( 10), 1,5-fin cell 213( 2), 1,5-fin cell 213( 3), and subcell 212( 10) are located in corresponding rows 204( 4), 204( 1), 204( 2), and 204( 3). Relative to the Y axis, cell 212(11) is placed so that its bottom surface abuts (or is stacked on) the top surface of cell 213(2) at boundary region 228(7); cell 213(2) is placed so that the bottom surface thereof abuts (8) the top surface of cell 213(3); and cell 213(3) is placed so that the bottom surface thereof abuts (10) the top surface at boundary region 228(9).Relative to the Y axis, there are: a column 226( 9) between a lower end of the gate structure 217( 4) and an upper end of the gate structure 216( 2); a column 226( 10) between a lower end of the gate structure 216( 2) and an upper end of the gate structure 216( 3); and a column 226( 9) between a lower end of the gate structure 216( 3) and an upper end of the gate structure 219( 4).The lower end of gate structure 217( 4) extends toward the lower boundary of cell 212( 11) sufficiently far to overlap fin structure 208P( 18). The lower end of gate structure 216( 2) extends toward the lower boundary of cell 213( 2) sufficiently far to overlap fin structure 208N( 12). The lower end of gate structure 216( 3) extends toward the lower boundary of cell 213( 3) sufficiently far to overlap fin structure 208P( 21).Boundary region 228( 7) overlies fin structure 208P( 18). Boundary region 228( 8) overlies fin structure 208N( 12). The boundary region 228( 9) sits over the fin structure 208P( 21). In contrast, according to the other approach, no gate structure may overlap fin structure 208P( 18), fin structure 208N( 12), or fin structure 208P( 21). By engaging cell 213( 3), cell 213( 2), a 1.5 fin cell is ready that has a single line height (SRH) so that no space is wasted as would be the case in the other approach. By engaging cell 212( 10), cell 213( 3), a 1.5 fin cell is ready that has a single line height (SRH) so that no space is wasted as would be the case in the other approach. Similarly, by engaging cell 213(2), cell 212(11) avoids the waste of space that occurs after the other approach. Each of the cells 213( 2) and 213( 3) has a height of 3TP, which represents a decrease in height of 2 / 5 compared to the other approach.In some embodiments, fin structure 208P( 18) is optional, as indicated by the dashed outline of fin structure 208P( 18). Accordingly, in some embodiments where fin structure 208P( 18) is not included, portion 218( 2) of gate structure 217( 4) is not included, such that portion 218( 2) is optionally as indicated by the dashed outline of portion 218( 2).Referring to FIG. 2F, layout diagram 200F includes fin structures 208P( 23) to 208P( 28) and 208N( 14) to 208N( 16), and gate structures 217( 5), 214( 4), 216( 4) and 217( 6) in corresponding cells 212( 11), 210( 4), 213( 4) and 212( 12). Subcell 212( 11), in-fin cell 210( 4), 1.5 fin cell 213( 4) and subcell 212( 12) are located in corresponding rows 204( 4), 204( 1), 204( 2) and 204( 3). Relative to the Y axis, cell 212(11) is placed so that its bottom surface abuts (or is stacked on) the top surface of 210(4) at boundary region 228(10)); cell 210(4) is placed so that the bottom surface thereof abuts the top surface of cell 213(4) at boundary region 228(11); and cell 213(4) is placed so that the bottom surface thereof abuts the top surface of cell 212(12) at boundary region 228(12).Relative to the Y axis, there are: a gap 226( 12) between a lower end of the gate structure 217( 5) and an upper end of the gate structure 214( 4); a gap 226( 13) between a lower end of the gate structure 214( 4) and an upper end of the gate structure 216( 4); and a gap 226( 14) between a lower end of the gate structure 216( 4) and an upper end of the gate structure 217( 6).The lower end of gate structure 217( 5) extends toward the lower boundary of cell 212( 11) sufficiently far to overlap fin structure 208P( 24). The top end of gate structure 216( 4) extends to the upper boundary of cell 213( 4) sufficiently far to overlap fin structure 208N( 15) u. The top end of gate structure 217( 6) extends to the upper boundary of cell 212( 12) sufficiently far to overlap fin structure 208P( 27).Boundary region 228( 10) overlies fin structure 208P( 24). Boundary region 228( 11) overlies fin structure 208N( 15). Boundary region 228( 12) overlies fin structure 208P( 27). In contrast, according to the other approach, no gate structure may overlap fin structure 208P( 24), fin structure 208N( 15), or fin structure 208P( 27). By engaging cell 210(4), cell 213(4), a 1.5 fin cell is ready that has a single line height (SRH) so that no space is wasted as would be the case in the other approach. Similarly, by engaging cell 210(4), cell 212(11) avoids the waste of space that occurs after the other approach. By engaging cell 213(4), 210(12) avoids the waste of space that occurs after the other approach. Cell 213(4) has a height of 3TP, which represents a reduction in height of 2 / 5 compared to the other approach.In some embodiments, fin structure 208P( 24) is optional, as indicated by the dashed outline of fin structure 208P( 24). Accordingly, in some embodiments where fin structure 208P( 24) is not included, portion 218( 3) of gate structure 217( 5) is not included, such that portion 218( 3) is optionally as indicated by the dashed outline of portion 218( 3). In some embodiments, fin structure 208P( 27) is optional, as indicated by the dashed outline of fin structure 208P( 27). Accordingly, in some embodiments where fin structure 208P( 27) is not included, portion 218( 4) of gate structure 217( 6) is not included, such that portion 218( 4) is optionally optional as indicated by the dashed outline of portion 218( 3).Referring to FIG. 2G, layout diagram 200G includes fin structures 208P( 29) to 208P( 37) and 208N( 17) to 208N( 22), and gate structures 217( 7), 216( 5), 216( 6), and 219( 5) in corresponding cells 212( 13), 230( 1), 230( 2), and 212( 14). Subcell 212( 13) and subcell 212( 14) are located in corresponding rows 204( 4) and 204( 6). Cell 230( 1) is a double row-high (DRH) cell and is located over rows 204( 1) and 204( 2). Cell 230( 2) is a DRH cell and is located over rows 204( 3) and 204( 5).In FIG. 2G, cell 230( 1) is a standard DRH cell and is also described as a triple-fin cell. Thus, it has three fin pairs corresponding to fin structures 208P( 31)- 208P( 33) and 208N( 17)- 208N( 19). Cell 230( 2) is the DRH standard cell and is also described as a triple-fin cell, where the three full pairs correspond to fin structures 208P( 34)- 208P( 36) and 208N( 20)- 208N( 22).Relative to the Y axis, cell 212(13) is placed so that its bottom surface abuts (or is stacked on) the top surface of cell 230(1) at boundary region 228(13)); cell 230(1) is placed so that the bottom surface thereof abuts (15) the top surface of cell 230(2) at boundary region 228(15); and cell 230(2) is placed so that the bottom surface thereof abuts (14) the top surface of cell 212(14) at boundary region 228(17).Cell 230( 1) is a combination of what would otherwise be a cell 213( 5) and a separate cell 211( 5) that would otherwise have a boundary region 228( 14) that sits over the fin structure 208N( 18). Cell 230( 2) is a combination of what would otherwise be a cell 213( 6) and a separate cell 211( 6) that would otherwise have a boundary region 228( 16) that sits over the fin structure 208N( 21).Relative to the Y axis, there are: a gap 226( 15) between a lower end of the gate structure 217( 7) and an upper end of the gate structure 216( 5); a gap 226( 16) between a lower end of the gate structure 216( 5) and an upper end of the gate structure 216( 6); and a gap 226( 17) between a lower end of the gate structure 216( 6) and an upper end of the gate structure 219( 5).The lower end of gate structure 217( 7) extends toward the lower boundary of cell 212( 13) sufficiently far to overlap fin structure 208P( 30). The lower end of gate structure 216( 5) extends to the lower boundary of cell 230( 1) sufficiently far to overlap fin structure 208P( 33). The lower end of gate structure 216( 6) extends toward the lower boundary of cell 230( 2) sufficiently far to overlap fin structure 208P( 36).The boundary region 228( 13) overlies the fin structure 208P( 30). The boundary region 228( 15) overlies the fin structure 208P( 33). Boundary region 228( 17) overlies fin structure 208P( 36). In contrast, according to the other approach, no gate structure may overlap fin structure 208P( 30), fin structure 208P( 33), or fin structure 208P( 36). By engaging cell 230( 1), cell 230 provides a triple-fin cell that has a double-line height (DRH), so that no space is wasted as would be the case in the other approach. By engaging cell 230( 1), cell 230( 2) provides a triple fin cell that has a double row height (DRH), so that no space is wasted as would be the case in the other approach. Similarly, by engaging cell 230( 1), cell 212( 13) avoids the waste of space that occurs after the other approach.In some embodiments, fin structure 208P( 30) is optional, as indicated by the dashed outline of fin structure 208P( 30). Accordingly, in some embodiments where fin structure 208P( 30) is not included, portion 218( 5) of gate structure 217( 7) is not included, such that portion 218( 5) is optionally as indicated by the dashed outline of portion 218( 5).Referring to FIG. 2H, layout diagram 200H includes cells 232( 1), 234( 1), 234( 2), 236( 1), and 236( 2). In addition to lines 204(9), 204(10), and 204(11), the layout diagram is organized according to half-lines 231(1)-231(5). Row 204( 9) includes half-rows 231( 1) and 231( 2). Row 204( 10) includes half-rows 231( 3) and 231( 4). Row 204( 11) includes half-rows 231( 4) and 231( 5). As part of a repeating sequence, half-rows 231( 1) and 231( 2) have fin structures for NMOS configuration (N-fin structures), and half-rows 231( 3) and 231( 4) have fin structures for PMOS configuration (P-fin structures). In some embodiments, the repeating sequence is opposite, with half-rows 231( 3) and 231( 4) having P-fin structures and half-rows 231( 2) and 231( 3) having N-fin structures. In some embodiments, there is still another sequence of the N-fin structures and P-fin structures.In FIG. 2H, relative to the Y axis, each of the cells 232( 1), 234( 1), 234( 2), 236( 1), and 236( 2) is spaced one-half row apart relative to a full row. Cell 232( 1) is a double row-high (DRH) cell and is located over half-rows 231( 1) to 231( 4). Each of cells 234( 1) and 236( 1) is a 1.5 row high (or a three half row high (THRH)) cell and is located over half rows 231( 1) to 231( 3). Each of cells 234( 2) and 236( 2) is a THRH cell and is located over half-cells 231( 3) to 231( 5).Cell 232( 1) is a triple-fin cell and includes three N fins and three P fins. Cell 234( 1) is a variation of a dual fin cell and includes three N fins and one P fin. Cell 234( 2) is also a variation of a dual fin cell and includes one N fin and three P fins. Cell 236( 1) is a variation of a 2.5 fin cell and includes three N fins and two P fins. Cell 236( 2) is also a variation of a 2.5 fin cell and includes two N fins and three P fins.FIGS. 3A through 3C are corresponding layout diagrams 200A through 300C, in accordance with some embodiments.Layout diagrams 300A- 300C are similar to layout diagrams 200B- 200G of corresponding FIGS. 2A-2G. Figures 3A-3C follow a similar numbering convention to that of Figures 2A-2H. However, some components are also accordingly different. While Figs. 2A to 2H use 2 row numbers, Figs. 3A to 3C use 3 row numbers. To help identify components that match but still have differences, the numbering convention uses numbers in brackets. For example, cell 310( 5) of FIG. 3A and cell 210( 4) of FIG. 2F are both in-house cells, with similarities reflected in the common root _ 10( _), and where the differences in the row number 3__( _) and 2__( _) and in the brackets __( 5) and __( 4). For the sake of brevity, the explanation focuses more on differences between FIGS. 3A to 3H and FIGS. 2A to 2F than on similarities.Cell 310( 5) further includes an MD structure 340( 1), a VD structure 342( 1), and an Mo structure 344( 1) as compared to cell 210( 4) of FIG. 2F. Cell 311( 5) further includes an MD structure 340( 2), a VD structure 342( 2), and an Mo structure 344( 2), as compared to cell 211( 4) of FIG. 2D. Mo structures 344(1) through 34(2) have respective long axes extending substantially parallel to the X axis. MD structures 340( 1) to 340( 2) have respective long axes extending substantially parallel to the Y axis.The fin structures (not numbered in FIG. 3A), MD structures 340( 1) to 340( 2), the gate structures (not numbered in FIG. 3A ), and the VD structures 342( 1) to 342( 2) are included in a transistor layer of the layout diagram 300A corresponding to a transistor layer of a semiconductor device based on layout diagram 300A. Mo structures 344( 1) to 344( 2) are included in a layer Mo of metallization in layout diagram 300A corresponding to a layer Mo of metallization of a semiconductor device based on layout diagram 300A.In layout diagram 300A, MD structures 340( 1) through 340( 2) represent corresponding conductive MD structures in a transistor layer of a semiconductor device based on layout diagram 200A. The gate structures (not numbered in FIG. 3A ) represent corresponding gate structures in a transistor layer of a semiconductor device based on layout diagram 300A. VD structures 342( 1) to 342( 2) represent corresponding VD structures in a transistor layer of a semiconductor device based on layout diagram 200A. A VD structure (see FIG. 4B ) electrically couples a drain / source structure to a corresponding conductive Mo segment. Mo structures 344( 1) to 344( 2) represent corresponding conductive segments in layer Mo of metallization of a semiconductor device based on layout diagram 200A.Layout diagram 300A assumes a corresponding semiconductor process technology node that includes various design rules to generate a layout diagram. Layout diagram 300A further assumes that the design rules follow a numbering convention in which a first layer of metallization (M_ 1st) and a corresponding first layer of interconnect structures (V_ 1st) are respectively referred to as Mo and Vo. Layer Mo of layout diagram 300A correspondingly represents layer Mo of metallization in a semiconductor device based on layout diagram 300A. In some embodiments, the numbering convention assumes that layer M_1st and layer V_1st are respectively referred to as M1 and V1.In the example of FIG. 3A, it is assumed that: Mo structures 344( 1) to 344( 2) are power grid (PG) structures representing respective conductors in a power grid of a semiconductor device manufactured based on the layout diagram 300A. In some embodiments, PG structures 244( 1)- 344( 2) are predetermined to provide a system reference voltage. In FIG. 3A, the PG structures 344( 1) to 344( 2) are predetermined to provide VDD. In some embodiments, PG structures 344( 1)- 344( 2) are biased to provide corresponding voltages other than VDD.In layout diagram 300A, it is viewed relative to the Y axis that cell 310( 5) is to be placed with the bottom thereof abutting (or stacked on) the top of cell 311( 5) as represented by the rounded corner phantom rectangle 346( 1). However, in such an abutting arrangement, the Mo structures 344( 1) and 344( 2) would fuse with a result that the VD structure 342( 1) would present a shortened electrical coupling (short circuit) across the fin structure that sits above the upper boundary of cell 311( 5). To avoid the short circuit, an alternative arrangement of cell 310( 5) in layout diagram 300B of FIG. 3B is provided as cell 310( 6).Referring to FIG. 3B, the MD structure 340( 3) and the VD structure 342( 3) of cell 310( 6) have replaced the MD structure 340( 1) and VD structure 342( 1) of cell 310( 5) of FIG. 3A, respectively. The MD structure 340( 3) and the VD structure 342( 3) are located on the left side of the gate structure in cell 310( 6), while the MD structure 340( 1) and the VD structure 342( 1) are located on the right side of the gate structure in cell 310( 5). In layout diagram 300B, it is viewed relative to the Y axis that cell 310( 6) is to be placed with the bottom thereof abutting (or stacked on) the top of cell 311( 5) as represented by the rounded corner phantom rectangle 346( 2). In such an abutting arrangement, a short circuit is avoided.Figure 3C shows the abutting arrangement formed from Figure 2B. In layout diagram 300C, MD patterns 340( 2) to 340( 3) of layout diagram 300B have been merged as MD pattern 340( 4). In layout diagram 300C, VD patterns 342( 2)- 342( 3) of layout diagram 300B have been merged as VD pattern 342( 4). In layout diagram 300C, Mo structures 344( 2) to 342( 3) of layout diagram 300B have been merged as Mo structure 344( 4).FIGS. 4A through 4B are respective cross-sectional views 400A through 400H of respective portions of the respective semiconductor devices, in accordance with some embodiments.More specifically, cross-sectional view 400A shows portions of a semiconductor device based on layout diagram 200B of FIG. 2B. Cross-sectional view 400B shows portions of a semiconductor device based on layout diagram 300C of FIG. 3C. The cross-sectional views 400A- 400B and the semiconductor device including the same are respective examples of the cell region 104 and semiconductor device 100 of FIG. 1.FIGS. 4A to 4C assume an XYZ orthogonal coordinate system in which the X-axis, Y-axis, and Z-axis represent respective first, second, and third directions. In some embodiments, the first, second, and third directions correspond to an orthogonal coordinate system other than the XYZ coordinate system.Cross-sectional view 400A follows a similar numbering convention as that of Figure 2B. While FIG. 2B uses 2 row numbers, FIG. 4A uses 4 row numbers. For example, 408N( 4) of FIG. 4A corresponds to gate structure 208N( 4) of FIG. 2B. Cross-sectional view 400B follows a similar numbering convention as that of Figure 3C. While FIG. 3C uses 3 row numbers, FIG. 4B uses 4 row numbers. For example, fin 408N( 23) of FIG. 4B corresponds to fin structure 308N( 23) of FIG. 3C.In FIG. 4A, cross-sectional view 400A includes intermediate layers 441, 443, and 445. In FIG. 4B, cross-sectional view 400A includes intermediate layers 441, 443, 445, 447, and 449.In FIG. 4A, the intermediate layer 441 includes a substrate 406( 2). The interlayer 443 includes fins 408N( 1), 408N( 3), 408N( 4), 408P( 2), 408P( 3), and 408P( 4), and an interlayer dielectric (ILD) 452. The intermediate layer 445 includes the gate electrodes 417( 1), 415( 2), and 417( 2), and an ILD 454.In FIG. 4B, the intermediate layer 441 includes a substrate 406( 3). The intermediate layer 443 includes fins 408N( 25), 408N( 24), and 408N( 23), and the ILD 452. The intermediate layer 445 includes MD contact 440( 4) and ILD 454. Intermediate layer 447 comprises a VD structure 442( 4) and to ILD 456. Interlayer 449 includes a conductive Mo segment 444( 4) and an ILD 458.FIG. 5 is a flow diagram of a method 500 of manufacturing a semiconductor device, in accordance with some embodiments.Examples of a semiconductor device that may be manufactured according to method 500 include semiconductor device 100 of FIG. 1.In FIG. 5, the method 500 includes blocks 502- 504. At block 504, a layout diagram is generated that has, among other things, an improved cell density and a correspondingly improved layout diagram density. An example of a semiconductor device corresponding to a layout generated by method 500 includes semiconductor device 100 of FIG. 1. block 502 is explained in more detail below with respect to FIG. 6A. From block 502, flow continues at block 504.In block 504, based on the layout diagram, at least one of (A) one or more photolithographic exposures or (B) the production of one or more semiconductor masks or (C) the production of one or more components in a layer of a semiconductor device is performed. See the following explanation of Fig. 8.FIG. 6A is a flow diagram of a method for generating a layout diagram, in accordance with some embodiments.More specifically, the method of FIG. 6A shows block 502 of FIG. 5 in greater detail, according to one or more embodiments.Examples of layout diagrams that may be generated according to the method of FIG. 6A include the layout diagrams disclosed herein, or the like. In some embodiments, layout diagrams and corresponding versions thereof are stored on a non-transitory computer readable medium, e.g., as layout diagram(s) 708 in computer readable medium 704 in FIG. 7 (explained below). The method of FIG. 6A may be implemented using the EDA system 700 (FIG. 7, explained below), for example, in accordance with some embodiments. Examples of a semiconductor device that can be manufactured based on layout diagrams generated according to the method of FIG. 6A include the semiconductor device of 100 FIG. 1, and semiconductor devices based on layout diagrams 200A to 200H and 300B to 300C, or the like.In FIG. 6A, block 502 includes blocks 602- 608. In block 602, standard cells are arranged in a layout diagram. Block 602 includes block 604. At block 604, stack constraints are considered with respect to abutting the upper / lower limits of the cells. An example of considering the upper / lower limit constraints is shown in FIGS. 3A to 3C or the like. Block 602 is explained in more detail below with respect to FIGS. 6B through 6F. From block 602, flow continues at block 606.In block 604, the layout diagram is subjected to automatic placement and routing (APR). From block 604, flow continues at block 606.At block 606, the layout diagram is revised in view of the time constraints on the abutting of the cells to the upper / lower limit. In some embodiments, the EDA system 700 includes a look-up table (or database) populated with delays associated with each cell type, e.g., cells 210( x), 211( x), 212( x), 213( x), 230( x), 232( x), 234( x), and 236( x) of FIGS. 2A-2H, or the like. In some embodiments, the EDA system 700 includes a look-up table (or database) populated with delays associated with each particular cell, e.g., cells 210( 4), 211( 4), 212( 14), 213( 4), 214( x), 230( 1), 232( 1), 234( 1), 236( 1), or the like. Relative delay similarities / deviations are considered when evaluating cell impact at the upper / lower (or vice versa) boundary.FIG. 6B is a flow diagram of a method for generating a layout diagram, in accordance with some embodiments.More specifically, the method of FIG. 6B shows block 602 of FIG. 6A in greater detail according to one or more embodiments.In FIG. 6B, block 604 includes blocks 622- 638. In block 620, first, second, and third active region structures are generated. In some embodiments, each of the first, second, and third active region structures is represented by one or more corresponding fin structures. An example of the first active region structure is the fin structure 208P( 7) of FIG. 2C or the like. An example of the second active region structure is fin structures 208N( 5), 208N( 6), and 208N( 7) of FIG. 2C, or the like. An example of the third active region structure is the fin structure 208P( 8) of FIG. 2C or the like. From block 622, flow continues at block 623.In block 623, the second active region pattern is located between the first and third active region patterns relative to the Y axis. Continuing with the example initiated above in connection with block 622, one example of block 624 is that the fin structures 208N( 5), 208N( 6), and 208N( 7) of FIG. 2C are between the fin structures 208P( 7) and 208P( 8) of FIG. 2C. From block 623, flow continues at block 624.In block 624, first and second gate structures are created. Continuing with the example developed above in connection with block 623, examples of the first and second gate structures include gate structures 214( 3) and 215( 3) of FIG. 2C, or the like. From block 624, flow continues at block 626.At block 626, the first gate structure is over the first active region structure and at least a first portion of the second active region structure. Continuing with the example developed above in connection with block 624, an example of block 626 is that gate structure 214( 3) of FIG. 2C is over fin structure 208P( 7) and one of fin structures 208N( 5), 208N( 6), and 208N( 7), namely fin structure 208N( 5). From block 626, flow continues at block 628.In block 628, the second gate structure of the third active region structure and at least a second portion of the second active region structure are. Continuing with the example developed above in connection with block 626, an example of block 628 is that gate structure 215( 3) of FIG. 2C is over fin structure 208P( 8) and two of fin structures 208N( 5), 208N( 6), and 208N( 7), namely fin structures 208N( 6), and 208N( 7). From block 628, flow continues at block 630.At 630, a first cell is defined to include the first gate structure, the first active region structure, and at least the first portion of the second active region structure. Continuing with the example developed above in connection with block 628, an example of block 630 is that cell 210( 3) of FIG. 2C includes gate structure 214( 3), fin structure 208P( 7), and fin structure 208N( 5). From block 630, flow continues at block 632.In 632, a second cell is defined to include the second gate structure, the third active region structure, and at least the second portion of the second active region structure. Continuing with the example developed above in connection with block 630, an example of block 632 is that cell 211( 3) of FIG. 2C includes gate structure 215( 3), fin structure 208P( 8), and fin structures 208N( 6) and 208N( 7). From block 632, flow continues at block 634.In block 634, first and second cells are fired, resulting in a first boundary region substantially aligned with an approximate centerline of the second active area structure. Continuing with the example developed above in connection with block 632, an example of the first boundary region is boundary region 228( 2). More specifically, relative to the Y axis, cell 210( 3) abuts cell 211( 3). Relative to the Y-axis, as the average fin structure of three fin structures, the fin structure 208N( 6) substantially aligns with an approximate centerline of the second active region structure, the latter being represented by the fin structures 208N( 5), 208N( 6), and 208N( 7). From block 634, flow continues at block 636.At block 636, the second gate structure is sized to overlap the first boundary region. Continuing with the example developed above in connection with block 634, one example of block 636 is that, relative to the Y-axis, the gate structure 215( 3) is sized to overlap the boundary region 228( 2) that includes the fin structure 208N( 6). From block 636, flow continues at block 638.In block 638, the first gate structure is sized to leave a first column, the first column being between the first gate structure and the first boundary region. Continuing with the example developed above in connection with block 636, one example of block 638 is that relative to the Y-axis, the gate structure 214( 3) is sized to leave the gaps 226( 4), where the gaps 226( 4) are between a lower end of the gate structure 214( 3) and the boundary region 228( 2).FIG. 6C is a flow diagram of a method for generating a layout diagram, in accordance with some embodiments.More specifically, the method of FIG. 6C illustrates further blocks included in block 602 of FIG. 6B, in accordance with one or more embodiments.In FIG. 6C, block 602 further includes blocks 642- 646. In block 642, a fourth active region structure is generated, wherein the first and fourth active region structures represent corresponding first and second portions of a fifth active region structure. Continuing with the example developed above in connection with block 638 of FIG. 6B, the fin structures 208P( 5) and 208P( 6) of FIG. 2C are an example of the fourth active region structure. Accordingly, fin structure 208P( 7) represents the first portion of the fifth active region structure, and fin structures 208P( 5) and 208P( 6) represent the second portion of the fifth active region structure. From block 642, flow continues at block 644.At block 644, a third cell is defined to include the second portion of the fifth active region structure. Continuing with the example developed above in connection with block 642, an example of block 644 is that cell 212( 5) includes fin structures 208P( 5) and 208P( 6). From block 644, flow continues at block 646.At block 646, the third and first cells are fired resulting in (i) a second boundary region substantially aligned with an approximate centerline of the fifth active region structure, (ii) and a second column, the second column being between the first gate structure and the second boundary region. Continuing with the example developed above in connection with block 644, an example of the second boundary region is boundary region 228( 1). More specifically, relative to the Y axis, cell 212( 5) abuts cell 210( 3). Relative to the Y-axis, as the central fin structure of three fin structures, the fin structure 208P( 6) substantially aligns with an approximate centerline of the fifth active region structure, the latter being represented by the fin structures 208P( 5), 208P( 6), and 208P( 7). In addition, the gate structure 214( 3) is sized to leave the gaps 226( 3), wherein the gaps 226( 3) are located between a lower end of the gate structure 217( 3) and the boundary region 228( 1).FIG. 6D is a flow diagram of a method for generating a layout diagram, in accordance with some embodiments.More specifically, the method of FIG. 6D illustrates further blocks included in block 602 of FIG. 6B, in accordance with one or more embodiments.In FIG. 6D, block 602 further includes blocks 652- 658. In block 652, a fourth active region structure is generated, wherein the third and fourth active region structures represent corresponding first and second portions of a fifth active region structure. Continuing with the example developed above in connection with block 638 of FIG. 6B, the fin structures 208P( 9) and 208P( 10) of FIG. 2C are an example of the fourth active region structure. Accordingly, fin structure 208P( 8) represents the first portion of the fifth active region structure, and fin structures 208P( 9) and 208P( 10) represent the second portion of the fifth active region structure. From block 652, flow continues at block 654.In block 654, a third cell is defined to include the second portion of the fifth active region structure. Continuing with the example developed above in connection with block 652, an example of block 654 is that cell 212( 6) includes fin structures 208P( 9) and 208P( 10). From block 654, flow continues at block 656.In block 656, third and second cells are fired, resulting in a second boundary region substantially aligned with an approximate centerline of the fifth active area structure. Continuing with the example developed above in connection with block 654, an example of the second boundary region is boundary region 228( 3). More specifically, relative to the Y axis, cell 211( 3) abuts cell 212( 6). Relative to the Y-axis, as the average fin structure of three fin structures, the fin structure 208P( 9) substantially aligns with an approximate centerline of the fifth active region structure, the latter being represented by the fin structures 208P( 8), 208P( 9), and 208P( 10). From block 656, flow continues at block 658.In block 658, the second gate structure is sized to overlap the second boundary region. Continuing with the example developed above in connection with block 656, an example of block 658 is that gate structure 215( 3) has a size to overlap boundary region 228( 3) that includes fin structure 208P( 9).FIG. 6E is a flow diagram of a method for generating a layout diagram, in accordance with some embodiments.More specifically, the method of FIG. 6E illustrates further blocks included in block 602 of FIG. 6B, in accordance with one or more embodiments.In FIG. 6E, block 602 further includes blocks 662 through 668. In block 662, a fourth active region structure is generated, the first and fourth active region structures representing respective first and second portions of a fifth active region structure. An example of the first active region structure is fin structures 208P( 12) and 208P( 13) of FIG. 2D. An example of the fourth active region structure is the fin structure 208P( 11) of FIG. 2D. Accordingly, fin structures 208P( 12) and 208P( 13) represent the first portion of the fifth active region structure, and fin structure 208P( 11) represents the second portion of the fifth active region structure. From block 662, flow continues at block 664.In block 664, a third cell is defined to include the second portion of the fifth active region structure. Continuing with the example developed above in connection with block 662, an example of the third cell is cell 212( 7), and an example of block 664 is cell 212( 7) includes fin structure 208P( 11). From block 664, flow continues at block 666.In block 666, third and first cells are fired, resulting in a second boundary region substantially aligned with an approximate centerline of the fifth active area structure. Continuing with block 664 above, which is also related to FIG. 2D, an example first cell is cell 213( 1), an example first boundary region is boundary region 228( 5), and an example second boundary region is boundary region 228( 4). More specifically, relative to the Y axis, cell 212( 7) abuts cell 213( 1). Relative to the Y-axis, as the central fin structure of three fin structures, the fin structure 208P( 12) substantially aligns with an approximate centerline of the fifth active region structure, the latter being represented by the fin structures 208P( 11), 208P( 12), and 208P( 13). From block 666, flow continues at block 668.In block 668, the first gate structure is sized to overlap the second boundary region. Continuing with the example developed above in connection with block 666, an example of the first gate structure is gate structure 216( 1), and so an example of block 668 is that gate structure 216( 1) is sized to overlap boundary region 228( 4) that includes fin structure 208P( 12).FIG. 6F is a flow diagram of a method for generating a layout diagram, in accordance with some embodiments.More specifically, the method of FIG. 6F illustrates further blocks included in block 602 of FIG. 6B, in accordance with one or more embodiments.In FIG. 6F, block 602 further includes blocks 672 through 676. In block 672, a fourth active region structure is generated, the third and fourth active region structures representing respective first and second portions of a fifth active region structure. Continuing with block 638 of FIG. 6B above, an example of the third active region structure is fin structure 208P( 19), and an example of the fourth active region structure is fin structures 208P( 17) and 208P( 18) of FIG. 2E. Accordingly, fin structure 208P( 19) represents the first portion of the fifth active region structure, and fin structures 208P( 17) and 208P( 18) represent the second portion of the fifth active region structure. From block 672, flow continues at block 674.In block 674, a third cell is defined to include the second portion of the fifth active region structure. Continuing with block 672 above, an example of the third cell is cell 212( 11), and so an example of block 674 is cell 212( 11) including fin structures 208P( 17) and 208P( 18). From block 674, flow continues at block 676.In block 676, the third and second cells are fired, resulting in (i) a second boundary region substantially aligned with an approximate centerline of the fifth active region structure, (ii) and a second column, the second column being between the first gate structure and the second boundary region. Continuing with the example developed above in connection with block 674, the first and second gate structures correspond to gate structures 216( 3) and 216( 2), an example of the first boundary region is boundary region 228( 8), and an example of the second boundary region is boundary region 228( 7). More specifically, relative to the Y axis, cell 212( 11) abuts cell 213( 2). Relative to the Y-axis, as the average fin structure of three fin structures, the fin structure 208P( 18) substantially aligns with an approximate centerline of the fifth active region structure, the latter being represented by the fin structures 208P( 17), 208P( 18), and 208P( 19). In addition, the gate structure 216( 2) is sized to leave the gaps 226( 9), where the gaps 226( 9) are located between a lower end of the gate structure 217( 4) and the boundary region 228( 7).FIG. 7 is a block diagram of an electronic design automation (EDA) system 700 in accordance with some embodiments.In some embodiments, the EDA system 700 includes an automatic placement and routing (APR) system. Methods described herein for generating PG layout diagrams according to one or more embodiments may be implemented using EDA system 700, for example, according to some embodiments.In some embodiments, an EDA system 700 is a general purpose computing device that includes a hardware processor 702 and a non-transitory computer readable storage medium 704. Storage medium 704 is encoded with, among other things, memory, computer program code 706, i.e., a set of executable instructions. Execution of instructions 706 by hardware processor 702 represents (at least in part) an EDA tool that defines a portion or all of a method according to one embodiment, e.g., the methods described herein, including one or more embodiments (hereafter, the recited processes and / or methods).The processor 702 is electrically coupled to the computer readable storage medium 704 via a bus 708. Processor 702 is also electrically coupled to an I / O interface 710 via bus 708. A network interface 712 is also electrically connected to the processor 702 via bus 708. Network interface 712 is connected to a network 714 such that processor 702 and computer readable storage medium 704 are capable of connecting to external elements via network 714. Processor 702 is configured to execute computer program code 706 encoded in computer readable storage medium 704 to render system 700 usable to perform a portion or all of the named processes and / or methods. In one or more embodiments, processor 702 is a central processing unit (CPU), a multiprocessor, a distributed processor system, an application specific integrated circuit (ASIC), and / or a suitable processing unit.In one or more embodiments, the computer readable storage medium 704 is an electronic, magnetic, optical, electromagnetic, infrared, and / or semiconductor system (or apparatus or device). For example, the computer readable storage medium 704 includes a semiconductor or solid state memory, a magnetic tape, a removable computer diskette, a random access memory (RAM), a read-only memory (ROM), a rigid magnetic disk, and / or an optical disk. In one or more embodiments using optical disks, the computer readable storage medium 704 includes a compact disk read only memory (CD-ROM), a compact disk read / write (CD-R / W), and / or a digital video disk (DVD).In one or more embodiments, storage medium 704 stores computer program code (instructions) 706 configured to cause system 700 to be used to execute a portion or all of the named processes and / or methods (such execution representing (at least in part) the EDA tool). In one or more embodiments, storage medium 704 also stores information that facilitates the performance of a portion or all of the named processes and / or methods. In one or more embodiments, storage medium 704 stores a library 707 of standard cells containing such standard cells as disclosed herein and one or more layout diagrams 708 as disclosed herein.The EDA system 700 includes the I / O interface 710. I / O interface 710 is coupled to external circuits. In one or more embodiments, the I / O interface 710 includes a keyboard, a dial, a mouse, a trackball, a trackpad, a touch screen, and / or cursor direction keys for communicating information and commands to the processor 702.The EDA system 700 also includes the network interface 712 coupled to the processor 702. Network interface 712 allows system 700 to communicate with network 714 to which one or more other computer systems are connected. Network interface 712 includes wireless network interfaces such as BLUETOOTH, WIFI, WIMAX, GPRS, or WCDMA; or wired network interfaces such as ETHERNET, USB, or IEEE-1364. In one or more embodiments, a portion or all of the named processes and / or methods are implemented in two or more systems 700.System 700 is configured to receive information through I / O interface 710. The information captured by the I / O interface 710 includes one or more of instructions, data, design rules, libraries of standard cells, and / or other parameters for processing by the processor 702. The information is transmitted to processor 702 via bus 708. The EDA system 700 is configured to receive information regarding a UI through the I / O interface 710 thereof. The information is stored in the computer readable medium 704 as a user interface (UI) 742.In some embodiments, a portion or all of the named processes and / or methods are implemented as a standalone software application for execution by a processor. In some embodiments, a portion or all of the named processes and / or methods are implemented as a software application that is a portion of another software application. In some embodiments, a portion or all of the named processes and / or methods are implemented as a plug-in for a software application. In some embodiments, at least one of the named processes and / or methods is implemented as a software application that is a portion of an EDA tool. In some embodiments, a portion or all of the named processes and / or methods are implemented as a software application running on the EDA system 700. In some embodiments, a layout diagram including standard cells is generated using a tool such as VIRTUOSO® available from CADENCE DESIGN SYSTEMS, Inc., or another suitable layout generation tool.In some embodiments, the processes are implemented as functions of a program stored in a non-transitory computer readable recording medium. Examples of a non-transitory computer readable recording medium include, but are not limited to, an external / removable and / or internal / built-in memory or storage unit, e.g., one or more of an optical disk such as a DVD, a magnetic disk such as a hard disk, a semiconductor memory such as a ROM, a RAM, a memory card, and the like.FIG. 8 is a block diagram of an integrated circuit (IC) fabrication system 800 and an IC fabrication flow associated therewith, in accordance with some embodiments. In some embodiments, based on a layout diagram, at least one of (A) one or more semiconductor masks or (B) at least one component is fabricated in a layer of a semiconductor integrated circuit using the fabrication system 800.In FIG. 8, the IC manufacturing system 800 includes entities such as a design house 820, a mask house 830, and an IC manufacturer / fab ("Fab") 850 that interact with each other in the design, development, and manufacturing cycles and / or services associated with manufacturing an IC device 860. The entities in the system 800 are interconnected by a communication network. In some embodiments, the communication network is a single network. In some embodiments, the communication network is a variety of different networks, such as an intranet and the Internet. The communication network comprises wired and / or wireless communication channels. Each entity interacts with one or more of the other entities and provides services to and / or receives services from one or more of the other entities. In some embodiments, two or more of design house 820, mask house 830, and IC fab 850 are owned by a single larger enterprise. In some embodiments, two or more of design house 820, mask house 830, and IC fab 850 coexist in a common facility and use common resources.The design house (or design team) 820 generates an IC design layout diagram 822. IC design layout diagram 822 includes various geometric structures designed for an IC device 860. The geometric structures correspond to patterns of metal, oxide, or semiconductor layers that represent the various components of the IC device 860 to be fabricated. The different layers combine to form different IC features. For example, a portion of the IC design layout diagram 822 includes various IC features such as an active region, gate electrode, source and drain, metal lines or vias of an interlayer interconnect, and openings for bonding pads to be formed in a semiconductor substrate (such as a silicon wafer), and various material layers on the semiconductor substrate. Design house 820 implements a proper design process to form IC design layout diagram 822. The design method includes one or more of logic design, physical design, or placement and routing. The IC design layout diagram 822 is represented in one or more data files having information on the geometric structures. For example, the IC design layout diagram 822 may be expressed in a GDSII file format or a DFII file format.The mask house 830 includes data preparation 832 and mask fabrication 844. The mask house 830 uses the IC design layout diagram 822 to fabricate one or more masks 845 to be used to fabricate the various layers of the IC device 860 according to the IC design layout diagram 822. The mask house 830 performs mask data preparation 832, translating the IC design layout diagram 822 into a representative data file ("RDF"). Mask data preparation 832 provides the RDF to mask fabrication 844. The mask fabrication 844 includes a mask writer. A mask writer converts the RDF into an image on a substrate such as a mask (reticle) 845 or a semiconductor wafer 853. Design layout diagram 822 is manipulated by mask data preparation 832 to conform to certain characteristics of the mask writer and / or requirements of IC fab 850. In FIG. 8, mask data preparation 832 and mask fabrication 844 are illustrated as separate elements. In some embodiments, mask data preparation 832 and mask fabrication 844 may be collectively referred to as mask data preparation.In some embodiments, mask data preparation 832 includes optical proximity correction (OPC) that uses lithography enhancement techniques to compensate for artifacts such as those that may arise from diffraction, interference, other process effects, and the like. OPC adjusts the IC design layout diagram 822. In some embodiments, mask data preparation 832 further includes resolution enhancement (RET) techniques such as off-axis illumination, sub-resolution assist features, phase shift masks, other suitable techniques, and the like, or combinations thereof. In some embodiments, inverted lithography technology (ILT) is also used that deals with OPC as a problem of inverted imaging.In some embodiments, mask data preparation 832 includes a mask rule checker (MRC) that checks IC design layout diagram 822 that has undergone processes in the OPC with a set of mask creation rules that include certain geometric and / or connectivity constraints to ensure sufficient margin to account for variability in semiconductor manufacturing processes and the like. In some embodiments, the MRC modifies the IC design layout diagram 822 to compensate for constraints during mask fabrication 844 that can undo some of the changes made by the OPC to meet the mask creation rules.In some embodiments, mask data preparation 832 includes a lithography process check (LPC) that simulates the processing implemented by IC Fab 850 to fabricate IC device 860. LPC simulates processing based on IC design layout diagram 822 to produce a simulated fabricated device, such as IC device 860. The processing parameters in the LPC simulation may include parameters associated with various processes of the IC manufacturing cycle, parameters associated with tools for manufacturing the IC, and / or other aspects of the manufacturing process. LPC contemplates various factors such as aerial contrast, depth of field ("DOF"), mask defect enhancement factor ("MEEF"), other suitable factors and the like, or combinations thereof. In some embodiments, after the simulated device is generated by LPC, if the simulated device does not conform in shape enough to meet the design rules, the OPC and / or MRC are repeated to further refine the IC design layout diagram 822.It should be understood that the above description of mask data preparation 832 has been simplified for clarity. In some embodiments, data preparation 832 includes other characteristics such as a logic operation (LOP) to modify IC design layout diagram 822 according to manufacturing rules. Further, the processes applied to the IC design layout diagram 822 during the data preparation 832 may be performed in a variety of different orders.After mask data preparation 832 and during mask fabrication 844, a mask 845 or a set of masks 845 is produced based on the altered IC design layout diagram 822. In some embodiments, mask fabrication 844 includes performing one or more lithographic contacts based on IC design layout diagram 822. In some embodiments, an electron beam (E-beam) or a mechanism of multiple E-beams is used to form a pattern on a mask (photomask or reticle) 845 based on the altered IC design layout diagram 822. The mask 845 may be formed using various techniques. In some embodiments, mask 845 is formed using binary technology. In some embodiments, a mask pattern includes opaque regions and transparent regions. A radiation beam, such as an ultraviolet (UV) beam, used to expose the image-sensitive material layer (e.g., photoresist) that has been applied to a wafer is blocked by the opaque region and penetrates through the transparent regions. In one example, a binary mask version of the mask 845 includes transparent substrate (e.g., fused silica) and an opaque material (e.g., chromium) coated on the opaque regions of the binary mask. In another example, the mask 845 is formed using phase shifting technology. In a phase shift mask (PSM) version of the mask 845, various characteristics in the pattern formed on the phase shift mask are configured to have a correct phase difference to improve resolution and imaging quality. In various examples, the phase shift mask may be a matched PSM or an alternating PSM. The mask(s) generated by the mask fabrication 844 is used in a variety of processes. For example, such a mask(s) is used in an ion implant process to form different doped regions in the semiconductor wafer 853 in an etching process to form different etching regions in the semiconductor wafer 853, and / or in other suitable processes.IC Fab 850 includes wafer fabrication 852. IC fab 850 is an IC fabrication company that includes one or more manufacturing facilities for fabricating a variety of different IC products. In some embodiments, the IC fab 850 is a semiconductor foundry. For example, there may be one manufacturing facility for front-end fabrication of multiple IC products ("front-end-of-line" (FEOL) fabrication), while a second manufacturing facility may provide the back-end fabrication for interconnecting and packaging the IC products ("back-end-of-line" (BEOL) fabrication), and a third manufacturing facility may provide other services for the foundry store.The IC fab 850 uses the mask(s) 845 manufactured by the mask house 830 / n to manufacture the IC device 860. Thus, the IC fab 850 at least indirectly uses the IC design layout diagram 822 to fabricate the IC device 860. In some embodiments, a semiconductor wafer 853 is fabricated through the IC fab 850 using the mask(s) 845 to form the IC device 860. In some embodiments, IC fabrication includes performing one or more lithographic contacts based at least indirectly on IC design layout diagram 822. The semiconductor wafer 853 includes a silicon substrate or other suitable substrate on which layers of material are formed. The semiconductor wafer 853 further includes one or more of various doped regions, dielectric properties, multi-layer interconnects, and the like (formed in successive fabrication steps).Details of an integrated circuit (IC) fabrication system (e.g., system 800 of FIG. 8 ) and an IC fabrication flow associated therewith are found, for example, in U.S. Pat. No. 9,256,709, issued Feb. 9, 2016, U.S. Pre-Grant Publication No. 2010278429, issued Oct. 1, 2015, U.S. Pre-Grant Publication No. 20140040838, issued Feb. 6, 2014, and U.S. Pat. No. 7,260,442, issued Aug. 21, 2007, each of which is incorporated herein by reference in its entirety.In one embodiment, a semiconductor device includes: first, second, and third active regions having respective first, second, and first conductive configurations, and having respective long axes extending substantially in a first direction; relative to a second direction substantially perpendicular to the first direction, the second active region being located between the first and third active regions; wherein first and second gate structures have respective long axes extending substantially in the second direction; wherein the first gate structure is located over the first active region and at least a first portion of the second active region; wherein the second gate structure is located over the third active region and at least a second portion of the second active region; wherein a first cell region includes the first gate structure, the first active region, and the first portion of the second active region; wherein a second cell region comprises the second gate structure, the third active region, and the second portion of the second active region; relative to the second direction, a first boundary region that represents an overlap of the first and second cell regions substantially aligned with an approximate centerline of the second active region; and relative to the second direction: the second gate structure that overlaps the first boundary region; and wherein the first gate structure does not extend onto the first boundary region. In an embodiment, the first, second, and third active regions are configured with respective one or more fin structures having respective long axes extending substantially in a first direction. In an embodiment, the first and second conductive configurations are PMOS and NMOS, respectively; or the first and second conductive configurations are NMOS and PMOS, respectively. In an embodiment, the first active region represents a first portion of a fourth active region, the fourth active region having the first conductive configuration; wherein the semiconductor device further comprises: a third cell region comprising a second portion of the fourth active region; and relative to the second direction: an approximate centerline of the fourth active region representing a second boundary region located between the first and third cell regions; and wherein the first gate structure does not extend to a second boundary region. In an embodiment, the third active region represents a first portion of a fourth active region, the fourth active region having the first conductive configuration; wherein the semiconductor device further comprises: a third cell region comprising a second portion of the fourth active region; and relative to the second direction: an approximate centerline of the fourth active region representing a second boundary region located between the first and third cell regions; and wherein the second gate structure overlaps the second boundary region. In an embodiment, the first active region represents a first portion of a fourth active region, the fourth active region having the first conductive configuration; wherein the semiconductor device further comprises: a third cell region comprising a second portion of the fourth active region; and relative to the second direction: an approximate centerline of the fourth active region representing a second boundary region located between the first and third cell regions; and wherein the first gate structure overlaps the second boundary region. In an embodiment, the third active region represents a first portion of a fourth active region, the fourth active region having the first conductive configuration; wherein the semiconductor device further comprises: a third cell region comprising a second portion of the fourth active region; and relative to the second direction: an approximate centerline of the fourth active region representing a second boundary region located between the third and second cell regions; and wherein the second gate structure does not extend to a second boundary region. In an embodiment, the second cell region further comprises a fourth active region representing a first portion of a fifth active region, the fourth and fifth regions having the second conductive configuration; and a third cell region representing a second portion of the fifth active region; relative to the second direction: an approximate centerline of the fifth active region representing a second boundary region located between the first and third cell regions; and wherein the second gate structure does not extend onto the second boundary region; the first cell region further comprises a sixth active region representing a first portion of a seventh active region, the sixth and seventh active regions having the second conductive configuration; wherein a fourth cell region has a second portion of the seventh active region; and relative to the second direction: an approximate center line of the seventh active region, representing a third boundary region located between the first and fourth cell regions; and wherein the first gate structure does not extend to the second boundary region; and wherein the first gate structure overlaps the third boundary region.In one embodiment, a method (of manufacturing a semiconductor device) (for a layout diagram stored in a non-transitory computer readable medium, the semiconductor device based on the layout diagram) includes generating the layout diagram including: generating the first, second, and third active region patterns that extend substantially parallel to a first direction and that are provided for the respective first, second, and first conductive types; relative to a second direction that is substantially perpendicular to the first direction, disposing the second active region pattern between the first and third active region patterns; generating the first and second gate patterns that have respective long axes that extend substantially in the second direction; disposing the first gate pattern over the first active region pattern and at least a first portion of the second active region pattern; Disposing the second gate structure over the third active region structure and at least a second portion of the second active region structure; defining a first cell comprising the first gate structure, the first active region structure, and the first portion of the second active region structure; defining a second cell comprising the second gate structure, the third active region structure, and the second portion of the second active region structure; relative to the second direction, substantially abutting the first and second cells resulting in a first boundary region substantially aligned approximately at the centerline of the second active region structure; and relative to the second direction: adjusting the size of the second gate structure to overlap the first boundary region; and adjusting the size of the first gate structure to leave a first column located between the first gate structure and the first boundary region. In an embodiment, the method further comprises: based on the layout diagram, at least one of: (A) performing one or more photolithographic exposures; (B) forming one or more semiconductor masks; or (C) forming at least one component in a layer of a semiconductor integrated circuit. In an embodiment, the method further comprises: designating the first and second conductivity types as type P and N, respectively; or designating the first and second conductivity types as type N and type P, respectively. In an embodiment, each of the first, second, and third active region structures is represented by one or more corresponding fin structures. In an embodiment, the generation of the layout diagram further includes: generating a fourth active region structure extending substantially parallel to the first direction and provided for the first conductivity type; wherein the first and fourth active region structures represent respective first and second portions of a fifth active region structure; defining a third cell to include a second portion of the fifth active region structure; and relative to the second direction, substantially abutting the third and first cells, resulting in: a second boundary region substantially aligned with an approximate centerline of the fifth active region structure; and a second column aligned between the first gate structure and the second boundary region. In an embodiment, generating the layout diagram further includes: generating a fourth active region structure extending substantially parallel to the first direction and predetermined for the first conductivity type; wherein the third and fourth active region structures, the corresponding first and second portions of a fifth active region structure; defining a third cell for including the second portion of the fifth active region structure; relative to the second direction, substantially abutting the third and second cells, resulting in: a second boundary region substantially aligned with the approximate centerline of the fifth active region structure; and adjusting the size of the second gate structure to overlap the second boundary region. In an embodiment, generating the layout diagram further includes: generating a fourth active region structure extending substantially parallel to the first direction and provided for the first conductivity type; the first and fourth active region structures including a corresponding first portion and second portions of a fifth active region structure; defining a third cell to include the second portion of the fifth active region structure; abutting substantially the third and first cells relative to the second direction, resulting in: a second boundary region aligned substantially at an approximate centerline of a fifth active region structure; and adjusting the size of the first gate structure to overlap the second boundary region. In an embodiment, generating the layout diagram further includes: generating a fourth active region structure extending substantially parallel to the first direction and predetermined for the first conductivity type; wherein the third and fourth active region structures define respective first and second portions of a fifth active region structure; and defining a third cell to include the second portion of the fifth active region structure; relative to the second direction, substantially abutting the third and second cells, resulting in: a second boundary region substantially aligned with an approximate centerline of the fifth active region structure; and a second column placed between the second gate structure and the second boundary region.In one embodiment, a system (for manufacturing a semiconductor device) includes at least one processor and at least one memory including computer program code for one or more programs, wherein the at least one memory, the computer program code, and the at least one processor are configured to cause the system to execute the generation of the layout diagram (for a layout diagram stored on a non-transitory computer readable medium, wherein the semiconductor device is based on the layout diagram), comprising: generating first, second, and third sets, each set including one or more fin structures, and each fin structure extending substantially parallel to a first direction corresponding to first, second, and first conductivity types; relative to a second direction substantially perpendicular to the first direction, arranging the second set between the first and third sets; Creating first and second gate structures having respective long axes extending substantially in the second direction; disposing the first gate structure over the first set and at least a first portion of the second set; disposing the second gate structure over the third set and at least a second portion of the second set; defining a first cell comprising the first gate structure, the first set, and the first portion of the second set; defining a second cell comprising the second gate structure, the third set, and the second portion of the second set; relative to the second direction, substantially abutting the first and second cells resulting in a first boundary region substantially aligned with an approximate centerline of the second set; and relative to the second direction: disposing the second gate structure to overlap the first boundary region; arranging the first gate structure to leave a first column located between the first gate structure and the first boundary region. In an embodiment, the system further comprises: at least one of: a masking device configured to fabricate one or more semiconductor masks based on the layout diagram; or a fabrication device configured to fabricate at least one component in a layer of a semiconductor integrated circuit based on the layout diagram. In an embodiment, generating the layout diagram further comprises: generating a fourth set representing a first portion of a fifth set, the fourth and fifth sets having the second conductivity type; further defining the second cell to include the fourth set; defining a third cell to include a second portion of the fifth active region; and relative to the second direction, substantially abutting the third cell and the second cell, resulting in: a second boundary region substantially aligned with an approximate centerline of the fifth set; and a second column disposed between the second gate structure and the second boundary region. In an embodiment, generating the layout diagram further comprises: generating a fourth set representing a portion of a fifth set; further defining the first cell to comprise the fourth set, the fourth and fifth sets having the second conductivity type; defining a third cell to comprise a second portion of the fifth active region; relative to the second direction, substantially abutting the third cell and the first cell, resulting in: a second boundary region substantially aligned with an approximate centerline of the fifth set; and adjusting the size of the first gate structure to overlap the second boundary region.

Claims

A semiconductor device comprising: first, second and third active regions (207, 208), wherein the first and third active regions (207, 208) have a first conductive configuration, the second active region (207, 208) has a second conductive configuration, and the first, second and third active regions (207, 208) have respective long axes extending substantially in a first direction; wherein the second active region (207, 208) is located between the first and third active regions (207, 208) relative to a second direction substantially perpendicular to the first direction; first and second gate structures (214, 215, 216) having respective long axes extending substantially in the second direction; wherein the first gate structure (214, 215, 216) extends over the first active region (207, 208) and at least a first portion of the second active region (207, 208); wherein the second gate structure (214, 215, 216) extends over the third active region (207, 208) and at least a second portion of the second active region (207, 208); wherein a first cell region (102) comprises the first gate structure (214, 215, 216), the first active region (207, 208), and the first portion of the second active region (207, 208); wherein a second cell region (102) comprises the second gate structure (214, 215, 216), the third active region (207, 208), and the second portion of the second active region (207, 208); wherein, relative to the second direction, a first boundary region (228) representing an overlap of the first and second cell regions (102) is substantially aligned with an approximate centerline of the second active region (207, 208); and wherein, relative to the second direction: the second gate structure (214, 215, 216) overlaps the first boundary region (228); and the first gate structure (214, 215, 216) does not extend to the first boundary region (228), wherein: the first active region (207, 208) represents a first portion of a fourth active region (207, 208), the fourth active region (207, 208) having the first conductive configuration; the semiconductor device further comprising: a third cell region (102) having a second portion of the fourth active region (207, 208); and relative to the second direction: an approximate centerline of the fourth active region (207, 208), representing a second boundary region (228) located between the first and third cell regions (102); and the first gate structure (214, 215, 216) that does not extend to the second boundary region (228).A semiconductor device comprising: first, second and third active regions (207, 208), wherein the first and third active regions (207, 208) have a first conductive configuration, the second active region (207, 208) has a second conductive configuration, and the first, second and third active regions (207, 208) have respective long axes extending substantially in a first direction; wherein the second active region (207, 208) is located between the first and third active regions (207, 208) relative to a second direction substantially perpendicular to the first direction; first and second gate structures (214, 215, 216) having respective long axes extending substantially in the second direction; wherein the first gate structure (214, 215, 216) extends over the first active region (207, 208) and at least a first portion of the second active region (207, 208); wherein the second gate structure (214, 215, 216) extends over the third active region (207, 208) and at least a second portion of the second active region (207, 208); wherein a first cell region (102) comprises the first gate structure (214, 215, 216), the first active region (207, 208), and the first portion of the second active region (207, 208); wherein a second cell region (102) comprises the second gate structure (214, 215, 216), the third active region (207, 208), and the second portion of the second active region (207, 208); wherein, relative to the second direction, a first boundary region (228) representing an overlap of the first and second cell regions (102) is substantially aligned with an approximate centerline of the second active region (207, 208); and wherein, relative to the second direction: the second gate structure (214, 215, 216) overlaps the first boundary region (228); and the first gate structure (214, 215, 216) does not extend to the first boundary region (228), wherein: the third active region (207, 208) represents a first portion of a fourth active region (207, 208), the fourth active region (207, 208) having the first conductive configuration; the semiconductor device further comprising: a third cell region (102) having a second portion of the fourth active region (207, 208); and relative to the second direction: an approximate centerline of the fourth active region (207, 208), representing a second boundary region (228) located between the first and third cell regions (102); and the second gate structure (214, 215, 216) overlapping the second boundary region (228).A semiconductor device comprising: first, second and third active regions (207, 208), wherein the first and third active regions (207, 208) have a first conductive configuration, the second active region (207, 208) has a second conductive configuration, and the first, second and third active regions (207, 208) have respective long axes extending substantially in a first direction; wherein the second active region (207, 208) is located between the first and third active regions (207, 208) relative to a second direction substantially perpendicular to the first direction; first and second gate structures (214, 215, 216) having respective long axes extending substantially in the second direction; wherein the first gate structure (214, 215, 216) extends over the first active region (207, 208) and at least a first portion of the second active region (207, 208); wherein the second gate structure (214, 215, 216) extends over the third active region (207, 208) and at least a second portion of the second active region (207, 208); wherein a first cell region (102) comprises the first gate structure (214, 215, 216), the first active region (207, 208), and the first portion of the second active region (207, 208); wherein a second cell region (102) comprises the second gate structure (214, 215, 216), the third active region (207, 208), and the second portion of the second active region (207, 208); wherein, relative to the second direction, a first boundary region (228) representing an overlap of the first and second cell regions (102) is substantially aligned with an approximate centerline of the second active region (207, 208); and wherein, relative to the second direction: the second gate structure (214, 215, 216) overlaps the first boundary region (228); and the first gate structure (214, 215, 216) does not extend to the first boundary region (228), wherein: the first active region (207, 208) represents a first portion of a fourth active region (207, 208), the fourth active region (207, 208) having the first conductive configuration; the semiconductor device further comprising: a third cell region (102) having a second portion of the fourth active region (207, 208); and relative to the second direction: an approximate centerline of the fourth active region (207, 208), representing a second boundary region (228) located between the first and third cell regions (102); and the first gate structure (214, 215, 216) overlapping the second boundary region (228).A semiconductor device comprising: first, second and third active regions (207, 208), wherein the first and third active regions (207, 208) have a first conductive configuration, the second active region (207, 208) has a second conductive configuration, and the first, second and third active regions (207, 208) have respective long axes extending substantially in a first direction; wherein the second active region (207, 208) is located between the first and third active regions (207, 208) relative to a second direction substantially perpendicular to the first direction; first and second gate structures (214, 215, 216) having respective long axes extending substantially in the second direction; wherein the first gate structure (214, 215, 216) extends over the first active region (207, 208) and at least a first portion of the second active region (207, 208); wherein the second gate structure (214, 215, 216) extends over the third active region (207, 208) and at least a second portion of the second active region (207, 208); wherein a first cell region (102) comprises the first gate structure (214, 215, 216), the first active region (207, 208), and the first portion of the second active region (207, 208); wherein a second cell region (102) comprises the second gate structure (214, 215, 216), the third active region (207, 208), and the second portion of the second active region (207, 208); wherein, relative to the second direction, a first boundary region (228) representing an overlap of the first and second cell regions (102) is substantially aligned with an approximate centerline of the second active region (207, 208); and wherein, relative to the second direction: the second gate structure (214, 215, 216) overlaps the first boundary region (228); and the first gate structure (214, 215, 216) does not extend to the first boundary region (228), wherein: the third active region (207, 208) represents a first portion of a fourth active region (207, 208), the fourth active region (207, 208) having the first conductive configuration; the semiconductor device further comprising: a third cell region (102) having a second portion of the fourth active region (207, 208); and relative to the second direction: an approximate centerline of the fourth active region (207, 208), representing a second boundary region (228) located between the third and second cell regions (102); and the second gate structure (214, 215, 216) that does not extend to the second boundary region (228).A semiconductor device comprising: first, second and third active regions (207, 208), wherein the first and third active regions (207, 208) have a first conductive configuration, the second active region (207, 208) has a second conductive configuration, and the first, second and third active regions (207, 208) have respective long axes extending substantially in a first direction; wherein the second active region (207, 208) is located between the first and third active regions (207, 208) relative to a second direction substantially perpendicular to the first direction; first and second gate structures (214, 215, 216) having respective long axes extending substantially in the second direction; wherein the first gate structure (214, 215, 216) extends over the first active region (207, 208) and at least a first portion of the second active region (207, 208); wherein the second gate structure (214, 215, 216) extends over the third active region (207, 208) and at least a second portion of the second active region (207, 208); wherein a first cell region (102) comprises the first gate structure (214, 215, 216), the first active region (207, 208), and the first portion of the second active region (207, 208); wherein a second cell region (102) comprises the second gate structure (214, 215, 216), the third active region (207, 208), and the second portion of the second active region (207, 208); wherein, relative to the second direction, a first boundary region (228) representing an overlap of the first and second cell regions (102) is substantially aligned with an approximate centerline of the second active region (207, 208); and wherein, relative to the second direction: the second gate structure (214, 215, 216) overlaps the first boundary region (228); and the first gate structure (214, 215, 216) does not extend to the first boundary region (228), wherein: the second cell region further comprises: a fourth active region (207, 208) representing a first portion of a fifth active region (207, 208), the fourth and fifth regions (207, 208) having the second conductive configuration; and a third cell region (102) including a second portion of the fifth active region (207, 208); relative to the second direction: an approximate center line of the fifth active region (207, 208) representing a second boundary region (228) located between the first and third cell regions (102); and the second gate structure (214, 215, 216) not extending onto the second boundary region (228); the first cell region (102) further comprising: a sixth active region (207, 208) representing a first portion of a seventh active region (207, 208), the sixth and seventh active regions (207, 208) having the second conductive configuration; a fourth cell region (102) having a second portion of the seventh active region (207, 208); and relative to the second direction: an approximate center line of the seventh active region (207, 208), representing a third boundary region (228) located between the first and fourth cell regions (102); and the first gate structure (214, 215, 216) that does not extend to the second boundary region (228); and the first gate structure (214, 215, 216) that overlaps the third boundary region (228).The semiconductor device of any preceding claim, wherein: the first, second and third active regions (207, 208) are configured with respective one or more fin structures (208) having respective long axes extending substantially in the first direction.The semiconductor device according to any one of the preceding claims, wherein: the first and second conductive configurations correspond to PMOS and NMOS; or the first and second conductive configurations correspond to NMOS and PMOS.A method of manufacturing a semiconductor device, the method comprising: generating a layout diagram stored on a non-transitory computer readable medium, the semiconductor device being based on the layout diagram, comprising: generating first, second and third active region structures (207, 208) extending substantially parallel to a first direction, wherein the first and third active region structures (207, 208) are provided for a first conductivity type and the second active region structure (207, 208) is provided for a second conductivity type; relative to a second direction substantially perpendicular to the first direction, disposing the second active region structure (207, 208) between the first and third active region structures (207, 208); creating first and second gate structures (214, 215, 216) having respective long axes extending substantially in the second direction; disposing the first gate structure (214, 215, 216) over the first active region structure (207, 208) and at least a first portion of the second active region structure (207, 208); disposing the second gate structure (214, 215, 216) over the third active region structure (207, 208) and at least a second portion of the second active region structure (207, 208); defining a first cell (102) including the first gate structure (214, 215, 216), the first active region structure (207, 208), and the first portion of the second active region structure (207, 208); defining a second cell (102) having the second gate structure (214, 215, 216), the third active region structure (207, 208), and the second portion of the second active region structure (207, 208); relatively to the second direction, substantially abutting the first and second cells (102), resulting in a first boundary region (228) substantially aligned with an approximate centerline of the second active region structure (207, 208); and relatively to the second direction: adjusting the size of the second gate structure (214, 215, 216) such that the first boundary region (228) is overlapped; and adjusting the size of the first gate structure (214, 215, 216) so as to leave a first column (226), the first column (226) being between the first gate structure (214, 215, 216) and the first boundary region (228), wherein generating the layout diagram further comprises: generating a fourth active region structure (207, 208) extending substantially parallel to the first direction and being provided for the first conductivity type; wherein the first and fourth active region structures (207, 208) represent respective first and second portions of a fifth active region structure (207, 208); defining a third cell (102) to include the second portion of the fifth active region structure (207, 208); and relative to the second direction, substantially abutting the third and first cells (102) results in: a second boundary region (228) substantially aligned with an approximate centerline of the fifth active region structure (207, 208); and a second column (226) disposed between the first gate structure (214, 215, 216) and the second boundary region (228).A method of manufacturing a semiconductor device, the method comprising: generating a layout diagram stored on a non-transitory computer readable medium, the semiconductor device being based on the layout diagram, comprising: generating first, second and third active region structures (207, 208) extending substantially parallel to a first direction, wherein the first and third active region structures (207, 208) are provided for a first conductivity type and the second active region structure (207, 208) is provided for a second conductivity type; relative to a second direction substantially perpendicular to the first direction, disposing the second active region structure (207, 208) between the first and third active region structures (207, 208); creating first and second gate structures (214, 215, 216) having respective long axes extending substantially in the second direction; disposing the first gate structure (214, 215, 216) over the first active region structure (207, 208) and at least a first portion of the second active region structure (207, 208); disposing the second gate structure (214, 215, 216) over the third active region structure (207, 208) and at least a second portion of the second active region structure (207, 208); defining a first cell (102) including the first gate structure (214, 215, 216), the first active region structure (207, 208), and the first portion of the second active region structure (207, 208); defining a second cell (102) having the second gate structure (214, 215, 216), the third active region structure (207, 208), and the second portion of the second active region structure (207, 208); relatively to the second direction, substantially abutting the first and second cells (102), resulting in a first boundary region (228) substantially aligned with an approximate centerline of the second active region structure (207, 208); and relatively to the second direction: adjusting the size of the second gate structure (214, 215, 216) such that the first boundary region (228) is overlapped; and adjusting the size of the first gate structure (214, 215, 216) so as to leave a first column (226), the first column (226) being between the first gate structure (214, 215, 216) and the first boundary region (228), wherein generating the layout diagram further comprises: generating a fourth active region structure (207, 208) extending substantially parallel to the first direction and being provided for the first conductivity type; wherein the third and fourth active region structures (207, 208) represent respective first and second portions of a fifth active region structure (207, 208); defining a third cell (102) to include the second portion of the fifth active region structure (207, 208); Relative to the second direction, substantially abutting the third and second cells (102) results in: a second boundary region (228) substantially aligned with an approximate centerline of the fifth active region structure (207, 208); and adjusting the size of the second gate structure (214, 215, 216) to overlap the second boundary region (228).A method of manufacturing a semiconductor device, the method comprising: generating a layout diagram stored on a non-transitory computer readable medium, the semiconductor device being based on the layout diagram, comprising: generating first, second and third active region structures (207, 208) extending substantially parallel to a first direction, wherein the first and third active region structures (207, 208) are provided for a first conductivity type and the second active region structure (207, 208) is provided for a second conductivity type; relative to a second direction substantially perpendicular to the first direction, disposing the second active region structure (207, 208) between the first and third active region structures (207, 208); creating first and second gate structures (214, 215, 216) having respective long axes extending substantially in the second direction; disposing the first gate structure (214, 215, 216) over the first active region structure (207, 208) and at least a first portion of the second active region structure (207, 208); disposing the second gate structure (214, 215, 216) over the third active region structure (207, 208) and at least a second portion of the second active region structure (207, 208); defining a first cell (102) including the first gate structure (214, 215, 216), the first active region structure (207, 208), and the first portion of the second active region structure (207, 208); defining a second cell (102) having the second gate structure (214, 215, 216), the third active region structure (207, 208), and the second portion of the second active region structure (207, 208); relatively to the second direction, substantially abutting the first and second cells (102), resulting in a first boundary region (228) substantially aligned with an approximate centerline of the second active region structure (207, 208); and relatively to the second direction: adjusting the size of the second gate structure (214, 215, 216) such that the first boundary region (228) is overlapped; and adjusting the size of the first gate structure (214, 215, 216) so as to leave a first column (226), the first column (226) being between the first gate structure (214, 215, 216) and the first boundary region (228), wherein generating the layout diagram further comprises: generating a fourth active region structure (207, 208) extending substantially parallel to the first direction and being provided for the first conductivity type; wherein the first and fourth active region structures (207, 208) represent the corresponding first portion and second portions of a fifth active region structure (207, 208); defining a third cell (102) to include the second portion of the fifth active region structure (207, 208); Relative to the second direction, substantially abutting the third and first cells (102) results in: a second boundary region (228) substantially aligned with an approximate centerline of the fifth active region structure (207, 208); and adjusting the size of the first gate structure (214, 215, 216) to overlap the second boundary region (228).A method of manufacturing a semiconductor device, the method comprising: generating a layout diagram stored on a non-transitory computer readable medium, the semiconductor device being based on the layout diagram, comprising: generating first, second and third active region structures (207, 208) extending substantially parallel to a first direction, wherein the first and third active region structures (207, 208) are provided for a first conductivity type and the second active region structure (207, 208) is provided for a second conductivity type; relative to a second direction substantially perpendicular to the first direction, disposing the second active region structure (207, 208) between the first and third active region structures (207, 208); creating first and second gate structures (214, 215, 216) having respective long axes extending substantially in the second direction; disposing the first gate structure (214, 215, 216) over the first active region structure (207, 208) and at least a first portion of the second active region structure (207, 208); disposing the second gate structure (214, 215, 216) over the third active region structure (207, 208) and at least a second portion of the second active region structure (207, 208); defining a first cell (102) including the first gate structure (214, 215, 216), the first active region structure (207, 208), and the first portion of the second active region structure (207, 208); defining a second cell (102) having the second gate structure (214, 215, 216), the third active region structure (207, 208), and the second portion of the second active region structure (207, 208); relatively to the second direction, substantially abutting the first and second cells (102), resulting in a first boundary region (228) substantially aligned with an approximate centerline of the second active region structure (207, 208); and relatively to the second direction: adjusting the size of the second gate structure (214, 215, 216) such that the first boundary region (228) is overlapped; and adjusting the size of the first gate structure (214, 215, 216) so as to leave a first column (226), the first column (226) being between the first gate structure (214, 215, 216) and the first boundary region (228), wherein generating the layout diagram further comprises: generating a fourth active region structure (207, 208) extending substantially parallel to the first direction and being provided for the first conductivity type; wherein the third and fourth active region structures (207, 208) represent respective first and second portions of a fifth active region structure (207, 208); and defining a third cell (102) to include the second portion of the fifth active region structure (207, 208); Relative to the second direction, substantially abutting the third and second cells (102) results in: a second boundary region (228) substantially aligned with an approximate centerline of the fifth active region structure (207, 208); and a second column (226) disposed between the second gate structure (214, 215, 216) and the second boundary region (228).The method of any of claims 8 to 11, further comprising: based on the layout diagram, at least one of: (A) performing one or more photolithographic exposures; (B) forming one or more semiconductor masks; or (C) forming at least one component in a layer of a semiconductor integrated circuit.The method of any of claims 8 to 12, further comprising: setting the first and second conductivity types as P or N, respectively; or setting the first and second conductivity types as N or P, respectively.The method of any of claims 8 to 13, wherein: each of the first, second, and third active region structures (207, 208) is represented by one or more corresponding fin structures (208).A system for manufacturing a semiconductor device, the system comprising: at least one processor; and at least one memory comprising computer program code for one or more programs; wherein the at least one memory, the computer program code, and the at least one processor are configured to cause the system to execute: generating a layout diagram stored on a non-transitory computer readable medium, wherein the semiconductor device is based on the layout diagram, comprising: generating first, second, and third sets (207), each set (207) comprising one or more fin structures (208), and each fin structure (208) extending substantially parallel to a first direction predetermined for respective first, second, and first conductivity types; relative to a second direction substantially perpendicular to the first direction, disposing the second set (207) between the first and third sets (207); creating first and second gate structures (214, 215, 216) having respective long axes extending substantially in the second direction; disposing the first gate structure (214, 215, 216) over the first set (207) and at least a first portion of the second set (207); disposing the second gate structure (214, 215, 216) over the third set (207) and at least a second portion of the second set (207); defining a first cell (102) including the first gate structure (214, 215, 216), the first set (207), and the first portion of the second active set (207); defining a second cell (102) having the second gate structure (214, 215, 216), the third set (207), and the second portion of the second set (207); relatively to the second direction, substantially abutting the first and second cells (102), resulting in a first boundary region (228) substantially aligned with an approximate centerline of the second set (207); and relative to the second direction: disposing the second gate structure (214, 215, 216) such that the first boundary region (228) is overlapped; Arranging the first gate structure (214, 215, 216) to leave a first column (226), the first column (226) being between the first gate structure (214, 215, 216) and the first boundary region (228), wherein generating the layout diagram further comprises: generating a fourth set (207) representing a first portion of a fifth set (207), the fourth and fifth sets (207) having the second conductivity type; further defining the second cell (102) to have the fourth set (207); defining a third cell (102) to have a second portion of the fifth set (207); and relative to the second direction, substantially abutting the third cell (102) and the second cell (102) results in: a second boundary region (228) substantially aligned with an approximate centerline of the fifth set (207); and a second column (226) disposed between the second gate structure (214, 215, 216) and the second boundary region (228).A system for manufacturing a semiconductor device, the system comprising: at least one processor; and at least one memory comprising computer program code for one or more programs; wherein the at least one memory, the computer program code, and the at least one processor are configured to cause the system to execute: generating a layout diagram stored on a non-transitory computer readable medium, wherein the semiconductor device is based on the layout diagram, comprising: generating first, second, and third sets (207), each set (207) comprising one or more fin structures (208), and each fin structure (208) extending substantially parallel to a first direction predetermined for respective first, second, and first conductivity types; relative to a second direction substantially perpendicular to the first direction, disposing the second set (207) between the first and third sets (207); creating first and second gate structures (214, 215, 216) having respective long axes extending substantially in the second direction; disposing the first gate structure (214, 215, 216) over the first set (207) and at least a first portion of the second set (207); disposing the second gate structure (214, 215, 216) over the third set (207) and at least a second portion of the second set (207); defining a first cell (102) including the first gate structure (214, 215, 216), the first set (207), and the first portion of the second active set (207); defining a second cell (102) having the second gate structure (214, 215, 216), the third set (207), and the second portion of the second set (207); relatively to the second direction, substantially abutting the first and second cells (102), resulting in a first boundary region (228) substantially aligned with an approximate centerline of the second set (207); and relative to the second direction: disposing the second gate structure (214, 215, 216) such that the first boundary region (228) is overlapped; and arranging the first gate structure (214, 215, 216) to leave a first column (226), the first column (226) being between the first gate structure (214, 215, 216) and the first boundary region (228), wherein generating the layout diagram further comprises: generating a fourth set (207) representing a first portion of a fifth set (207); further defining the first cell (102) to comprise the fourth set (207), the fourth and fifth sets (207) having the second conductivity type; defining a third cell (102) to comprise a second portion of the fifth set (207); Relative to the second direction, substantially abutting the third cell (102) and the first cell (102) results in: a second boundary region (228) substantially aligned with an approximate centerline of the fifth set (207); and adjusting the size of the first gate structure (214, 215, 216) to overlap the second boundary region (228).The system of claim 15 or 16, further comprising at least some of: a masking device configured to fabricate one or more semiconductor masks based on the layout diagram; or a fabrication device configured to fabricate at least one component in a layer of a semiconductor integrated circuit based on the layout diagram.

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