Display device

Abstract

Display device containing an active area (AA), wherein the display device comprises the following: a substrate (101) which has a substrate hole (120) formed in the active area (AA) by the substrate (101); several light-emitting elements (130) arranged in the active area (AA) on the substrate (101); an encapsulation unit (140) arranged on the light-emitting elements (130); an organic covering layer (148) arranged on the encapsulation unit (140); an inner dam (108) which is arranged between the substrate hole (120) and the light-emitting element (130); a barrier element (118) which is arranged at least partially between the substrate hole (120) and the inner dam (108), and a barrier recess (110) arranged between the substrate hole (120) and the inner dam (108), wherein the locking element (118) is arranged such that it surrounds the substrate hole (120).

Description

BACKGROUND OF THE INVENTION Area of ​​the invention

[0001] The present invention relates to a display device and in particular to a display device having a reduced non-display area. Discussion of the related field

[0002] Image display devices, a core technology in the information and communication age used to display various types of information on a screen, have been developed to be thinner, lighter, and more portable while maintaining high performance. As a result, flat-panel display devices, which are lighter and smaller than cathode ray tubes (CRTs), have garnered significant attention.

[0003] Representative examples of such flat panel display devices may include a liquid crystal display device (LCD device), a plasma display field device (PDP device), an organic light-emitting display device (OLED device), and an electrophoretic display device (ED device).

[0004] A flat-panel display device is used in various types of equipment, such as televisions, surveillance equipment, and mobile phones. This device also incorporates a camera, a loudspeaker, and a sensor. The camera, loudspeaker, and sensor are located in a non-display area of ​​the device. Therefore, in a conventional display device, the size of a non-display area (i.e., a bezel area or pad area) is increased, thereby reducing the size of a display area (i.e., an active area of ​​the device). US 2018 / 0183015 A1 discloses a display device comprising a flexible substrate, a thin-film transistor assembly, and a light-emitting unit.The flexible substrate comprises a display area with a first area, a border area adjacent to the display area, and a first penetration section corresponding to the first area. The thin-film transistor assembly is located in the display area and at least in a portion of the border area. US 2018 / 0069063 A1 discloses a display device comprising a circuit element layer on a substrate and comprising a thin-film transistor, a storage capacitor and an associated pixel electrode, a display layer comprising an emission layer, a counter electrode on the emission layer and a functional layer, and a thin encapsulation layer on the display layer. SUMMARY OF THE INVENTION

[0005] Therefore, the present invention is directed to a display device which essentially avoids one or more problems caused by limitations and disadvantages of the related field.

[0006] One object of the present invention is to create a display device that has a reduced non-display area.

[0007] Additional advantages, functions, and features of the invention are partly set out in the following description and will partly become clear to those skilled in the art after reviewing the following, or can be learned from putting the invention into practice. The functions and further advantages of the invention can be realized and achieved in particular through the structure shown in the written description and its claims, as well as in the accompanying drawings.

[0008] The problem is solved by the features of the independent claims. Preferred embodiments are given in the dependent claims.

[0009] To achieve these tasks and further advantages, and in accordance with the purpose of the invention embodied and comprehensively described herein, a display device comprises an organic cover layer arranged on an encapsulation unit, an inner dam arranged between a substrate hole and several light-emitting elements, and a barrier element arranged between the substrate hole and the inner dam, wherein the barrier element is arranged under the organic cover layer, thereby making it possible to prevent damage to a light-emitting stack and to reduce the size of a non-display area, since the substrate hole is arranged in an active area.

[0010] It is understood that both the preceding general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide a further explanation of the claimed invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The accompanying drawings, which are included to provide a more comprehensive understanding of the invention and are incorporated into this application and form part thereof, illustrate one or more embodiments of the invention and, together with the description, serve to explain the principle of the invention; they show: Fig. 1 a view showing an organic light-emitting display device having a substrate hole according to the present invention; Fig. 2 a sectional view of the organic light-emitting display device extending along lines II' and II-II' of Fig. 1 was taken; Fig. 3. A detailed top view showing the substrate hole area that is in Fig. 1 is shown, shows; Fig. 4 A sectional view showing a camera module inserted into the substrate hole that is in Fig. 2 is shown, is inserted; Fig. Sectional views 5A to 5E showing a method for manufacturing the organic light-emitting display device, which includes the substrate hole located in Fig. 2 is shown, possesses, illustrate; Fig. 6 a view showing an organic light-emitting display device having a substrate hole according to a second embodiment of the present invention; and Fig. Sectional views 7A to 7E showing a method for manufacturing the organic light-emitting display device, which includes the substrate hole located in Fig. Figure 6 is shown, possesses, illustrate. DETAILED DESCRIPTION OF THE INVENTION

[0012] Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used throughout the drawings to refer to the same or similar parts.

[0013] The display device, which is in Fig. 1 and Fig. Figure 2 shows an active area AA and a pad area PDA.

[0014] Several pads 180 for supplying control signals to multiple signal lines 106, which are arranged in the active area AA, are formed in the pad area PDA. Here, the signal lines 106 include a scanning line SL and / or a data line DL and / or a high-voltage supply line (VDD supply line) and / or a low-voltage supply line (VSS supply line). Each of the multiple pads 180 contains a lower contact electrode 182 and / or an upper contact electrode 184. The lower contact electrode 182 and / or the upper contact electrode 184 contact a corresponding signal line 106.

[0015] The lower contact electrode 182 is made of the same material as a gate electrode 152 and is arranged on a dielectric gate film 116, which is arranged in the same plane as the gate electrode 152. The upper contact electrode 184 is made of the same material as a source and a drain electrode 156 and 158, respectively, and is arranged on a dielectric interlayer film 102, which is arranged in the same plane as the source and drain electrodes 156 and 158. The upper contact electrode 184 contacts the lower contact electrode 182, which is exposed through a first pad contact hole 186 formed by the dielectric interlayer film 102.The upper contact electrode 184 is exposed through a second pad contact hole 188, which is formed by an organic cover layer 148 and an inorganic cover layer 170, and is electrically connected to a signal transmission film (not shown) which is connected to an integrated control circuit (not shown).

[0016] Meanwhile, although the structure in which the lower contact electrode 182 and the upper contact electrode 184 touch each other by means of the first pad contact hole 186 must be exemplified by reference to Fig. As described in 2, the lower contact electrode 182 and the upper contact electrode 184 do not touch each other, but can be insulated and, in the state in which the dielectric intermediate layer film 102 is arranged between them, are opposite each other.

[0017] The active area AA contains a radiation area EA, a blocking area BA and a hole area HA.

[0018] Unit pixels, each containing a light-emitting element 130, are arranged in the emission area EA. As in Fig. As shown in Figure 1, each unit pixel contains a red (R), a green (G), a blue (B), and a white (W) subpixel. Each subpixel contains a light-emitting element 130 and a pixel control circuit for independently controlling the light-emitting element 130.

[0019] The pixel control circuit contains a switching transistor TS, a control transistor TD and a storage capacitor Cst.

[0020] When a sampling pulse is supplied to the sampling line SL, the switching transistor TS is turned on to supply a data signal which is supplied to the data line DL, to the storage capacitor Cst and to a gate electrode of the drive transistor TD.

[0021] In response to the data signal supplied to the gate electrode of the driver transistor TD, the driver transistor TD controls the current I supplied by the high-voltage supply line (VDD supply line) to the light-emitting element 130 to adjust the amount of light emitted by the light-emitting element 130. Even when the switching transistor TS is turned off, the driver transistor TD supplies a constant current I to the light-emitting element 130 using the voltage charged into the storage capacitor Cst, such that the light-emitting element 130 continues to emit light until a data signal from the next frame is supplied.

[0022] As in Fig. As shown in Figure 2, the control transistor TD 150 contains an active layer 154 arranged on an active buffer layer 114, a gate electrode 152 which overlaps with the active layer 154 in the state in which the dielectric gate film 116 is arranged between them, and a source and a drain electrode 156 and 158 which are formed on the dielectric intermediate layer film 102 such that they touch the active layer 154.

[0023] The active layer 154 is made of at least one amorphous semiconductor material, a polycrystalline semiconductor material, or an oxide semiconductor material. The active layer 154 comprises a channel region, a source region, and a drain region. The channel region overlaps with the gate electrode 152 in the state in which the dielectric gate film 116 is positioned between them, forming the space between the source and drain electrodes 156 and 158. The source region is electrically connected to the source electrode 156 via a source contact hole formed by the dielectric gate film 116 and the dielectric interlayer film 102. The drain region is electrically connected to the drain electrode 158 via a drain contact hole formed by the dielectric gate film 116 and the dielectric interlayer film 102.A multilayer buffer layer 112 and an active buffer layer 114 are provided between the active layer 154 and a substrate 101. The multilayer buffer layer 112 delays the diffusion of moisture and / or oxygen that would otherwise penetrate the substrate 101. The multilayer buffer layer 112 can be formed over the entire substrate 101 to create an environment in which a thin film can be formed more stably, while allowing various processes to be carried out more smoothly before the complete manufacturing process of the display panel is carried out. The active buffer layer 114 protects the active layer 154 and blocks the penetration of various defects from the substrate 101. The multilayer buffer layer 112 and / or the active buffer layer 114 and / or the substrate 101 have a multilayer structure.

[0024] At present, the top layer of the multilayer buffer layer 112, which contacts the active buffer layer 114, is made of a material possessing etching properties that differ from those of the other layers of the multilayer buffer layer 112, the active buffer layer 114, and the dielectric gate film 116. The top layer of the multilayer buffer layer 112, which contacts the active buffer layer 114, is made of one SiNx and SiOx alloy, while the other layers of the multilayer buffer layer 112, the active buffer layer 114, and the dielectric gate film 116 are made of the other SiNx and SiOx alloy. For example, the top layer of the multilayer buffer layer 112, which touches the active buffer layer 114, is made of SiNx, and the other layers of the multilayer buffer layer 112, the active buffer layer 114 and the dielectric gate film 116 are made of SiOx.

[0025] The light-emitting element 130 comprises an anode electrode 132 connected to the drain electrode 158 of the drive transistor 150, at least one light-emitting stack 134 formed on the anode electrode 132, and a cathode electrode 136 formed on the light-emitting stack 134 such that it is connected to the low-voltage supply line (VSS supply line). Here, the low-voltage supply line (VSS supply line) provides a low voltage VSS, which is lower than a high voltage VDD.

[0026] The anode electrode 132 is electrically connected to the drain electrode 158 of the driver transistor 150, which is exposed through a pixel contact hole 126 formed by a passivation film 124 and a planarization layer 104 arranged on the driver transistor 150. The anode electrode 132 of each subpixel is formed on the planarization layer 104 such that it is exposed through a bank 138.

[0027] If the anode electrode 132 is attached to an organic light-emitting display device of the rear- or bottom-emitting type, the anode electrode 132 is made of a transparent conductive film such as indium tin oxide (ITO) or indium zinc oxide (IZO). If the anode electrode 132 is attached to an organic light-emitting display device of the front-emitting type, the anode electrode 132 is formed such that it has a multilayer structure comprising a transparent conductive film and an opaque conductive film exhibiting high reflection efficiency. A material exhibiting a relatively high work function, such as...Indium tin oxide (ITO) or indium zinc oxide (IZO) is used as the transparent conductive film, and a single- or multi-layered structure containing Al, Ag, Cu, Pb, Mo, Ti, or an alloy thereof is used as the opaque conductive film. For example, the anode electrode 132 is formed such that it has a structure in which a transparent conductive film, an opaque conductive film, and a transparent conductive film are sequentially layered.

[0028] The light-emitting stack 134 is formed by layers of a hole transport layer, a light emission layer and an electron transport layer on the anode electrode 132 in that order or in reverse order.

[0029] The cathode electrode 136 is formed on the light-emitting stack 134 and on the surface and side surface of the bank 138 such that, in the state in which the light-emitting stack 134 is arranged between them, it is opposite the anode electrode 132.

[0030] The encapsulation unit 140 prevents external moisture or oxygen from penetrating the light-emitting element 130, which has low resistance to external moisture or oxygen. For this purpose, the encapsulation unit 140 comprises several inorganic encapsulation layers 142 and 146 and an organic encapsulation layer 144 arranged between the inorganic encapsulation layers 142 and 146. The inorganic encapsulation layer 146 is located at the outermost layer. Thus, the encapsulation unit 140 comprises at least one inorganic encapsulation layer 142 and 146 and at least one organic encapsulation layer 144. The present invention describes, by way of example, an encapsulation unit 140 having a structure in which an organic encapsulation layer 144 is arranged between a first and a second inorganic encapsulation layer 142 and 146.A contact electrode is positioned between the encapsulation unit and the organic top layer.

[0031] The first inorganic encapsulation layer 142 is formed on the substrate 101, on which the cathode electrode 136 is formed, such that it is located closest to the light-emitting element 130. The first inorganic encapsulation layer 142 is made of an inorganic dielectric material that can be deposited at a low temperature, such as silicon nitride (SiNx), silicon dioxide (SiOx), silicon nitride (SiON), or aluminum oxide (Al2O3). Consequently, the inorganic encapsulation layer 142 is deposited in a low-temperature atmosphere, thus preventing damage to the light-emitting stack 134, which has low resistance to a high-temperature atmosphere, during the deposition of the first inorganic encapsulation layer 142.

[0032] The second inorganic encapsulation layer 146 is formed such that it covers the surface and side surface of the organic encapsulation layer 144 and the surface and side surface of the inorganic encapsulation layer 142 that are exposed by the organic encapsulation layer 144. Consequently, the surface, bottom surface, and side surface of the organic encapsulation layer 144 are sealed by the first and second inorganic encapsulation layers 142 and 146, thereby minimizing or preventing the penetration of external moisture or oxygen into the organic encapsulation layer 144, or preventing moisture or oxygen present in the organic encapsulation layer 144 from penetrating the light-emitting element 130. The second inorganic encapsulation layer 146 is made of an inorganic dielectric material such as, for example,silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON) or aluminum oxide (Al2O3) are produced.

[0033] The organic encapsulation layer 144 reduces stress between the layers caused by bending of the organic light-emitting device and improves planarity. Additionally, the organic encapsulation layer 144 is designed to be thicker than the inorganic encapsulation layers 142 and 146 to prevent the formation of cracks or pinholes due to foreign matter. The organic encapsulation layer 144 is made of an organic dielectric material such as an acrylic resin, an epoxy resin, polyimide, polyethylene, or silicon oxycarbide (SiOC).

[0034] An outer dam 128 and an inner dam 108 are formed in such a way that they restrict the mobility or spread of the organic encapsulation layer 144 when the organic encapsulation layer 144 is formed.

[0035] As in Fig. As shown in Figure 1, at least one outer dam 128 can be formed such that it completely surrounds the active area AA, in which the light-emitting element 130 is located, or it can be formed only between the active area AA and the pad area PDA. If the pad area PDA, in which the pads 180 are located, is located on one side of the substrate 101, the outer dam 128 is located only on that side of the substrate 101. If the pad area PDA, in which the pads 180 are located, is located on opposite sides of the substrate 101, the outer dam 128 is located on the opposite sides of the substrate 101. If several outer dams 128 are located, the outer dams 128 are arranged side by side in the state in which they are spaced apart from each other by a predetermined distance.By providing the outer dam 128, it is possible to prevent the organic encapsulation layer 144 from spreading to the pad area PDA.

[0036] In the same way as the outer dam 128, at least one inner dam 108 is formed, such that it has a single-layer or a multi-layer structure 108a and 108b. For example, the inner dam 108 and the outer dam 128 are made of the same material as the planarizing layer 104 and / or the bench 138 and / or a spacer (not shown) and are formed simultaneously, thus eliminating the need for an additional masking process and therefore avoiding an increase in costs. Furthermore, the barrier element can be made of a different material than the inner dam. The inner dam 108 is designed to completely surround a barrier recess 110. The inorganic encapsulation layers 142 and 146 overlap the barrier recess 110.By providing an internal dam 108, it is possible to prevent the organic encapsulation layer 144, which can be used as a moisture penetration path, from spreading to the barrier recess 110.

[0037] The boundary area BA is located between the hole area HA and the radiation area EA. The inner dam 108, a barrier element 118, at least one barrier recess 110 and a through hole 190 are located in the boundary area BA.

[0038] As in Fig. As shown in Figure 3, the barrier element 118 is positioned between the inner dam 108 and a substrate hole 120, which is located in the hole area HA, such that it completely surrounds the substrate hole 120. At this point, the signal lines 106, which contain the scanning line SL and the data line DL and which are arranged around the inner dams 108, the barrier elements 118 and the substrate hole 120, are arranged such that they are redirected along the contour of the substrate hole 120.

[0039] The barrier element 118 is formed in the same plane as the inner dam 108 and is made of the same material. For example, the barrier element 118 on the dielectric interlayer film 102 is formed in the same way as the inner dam 108, having a multilayer structure 108a and 108b. The lower layer 108a of the barrier element 118 is made of the same material as the planarization layer 104, and the upper layer 108b of the barrier element 118 is made of the same material as the bench 138. Since a section of the barrier element 118 can be removed when the through-hole 190 is formed, the barrier element 118 is formed such that its width is less than or equal to the width of the inner dam 108.Since the barrier element 118 is arranged in such a way that it completely surrounds the substrate hole 120, it is possible to prevent the organic covering layer 148, which can be used as a moisture penetration path, from spreading to the substrate hole 120.

[0040] The barrier recess 110 is arranged between the inner dam 108 and the substrate hole 120, or optionally between the inner dam 108 and the barrier element 118. The barrier recess 110 is formed by the multilayer buffer layer 112 and / or the active buffer layer 114 and / or the dielectric gate film 116 and / or the dielectric intermediate film 102, which are arranged between the substrate 101 and the planarization layer 104. At this point, the side surface of the inorganic dielectric layer 112, 114, 116, or 102 exposed by the barrier recess 110 is formed in an inverted conical shape to form an acute angle with the bottom surface of the inorganic dielectric layer 112, 114, 116, or 102 exposed by the barrier recess 110.When the light-emitting stack 134 and the cathode electrode 136 are formed, they are separated by the barrier recess 110. Therefore, even if external moisture penetrates along the light-emitting stack 134, which is arranged around the hole area HA, the barrier recess 110 can prevent or hinder the moisture from entering the emission area EA. Furthermore, even if static electricity is introduced along the cathode electrode 136, which is arranged around the hole area HA, the barrier recess 110 can prevent the static electricity from propagating to the emission area EA.Since the inorganic dielectric layers 112, 114, 116 or 102, which each have a higher hardness than an organic dielectric material and in which cracks therefore easily form due to bending stress, are removed by the barrier recess 110, it is also possible to prevent cracks from propagating to the radiation area EA.

[0041] The organic top layer 148 can be formed in the further areas EA, BA, and PDA, with the exception of the hole area HA, or it can be formed only in the barrier area BA and the pad area PDA. That is, the organic top layer 148 is formed in such a way that the barrier element 118 prevents it from spreading into the hole area HA. ​​The organic top layer 148 is formed on the uppermost inorganic encapsulation layer 146 of the encapsulation unit 140 and is made of the same material as the organic encapsulation layer 144. Consequently, the organic top layer 148 is formed solely by a deposition process without a separate photomasking process, thus eliminating the need for a separate peeling process.

[0042] Since the organic top layer 148 does not touch the light-emitting stack 134 due to the presence of the second inorganic encapsulation layer 146, it is possible to prevent moisture from penetrating the light-emitting stack 134 through the organic top layer 148. Furthermore, because the organic top layer 148 is arranged on the encapsulation unit 140, it is possible to prevent the inorganic encapsulation layers 142 and 146, which are arranged in the emission zone EA, from being etched when the through-hole 190 is formed.

[0043] The inorganic top layer 170 is formed on the organic top layer 148 and is made of an inorganic dielectric material. Since the interfaces between the organic top layer 148 and the thin films 114, 116, 102, 118, 134, 136, 142 and 146, which are exposed through the through-hole 190, are sealed by the inorganic top layer 170, it is possible to minimize or prevent external moisture or oxygen from penetrating the organic top layer 148 and thus the interfaces.

[0044] The through-hole 190 is formed by several thin-film layers arranged in the hole region HA and the surrounding area. For example, the through-hole 190 is formed by the inorganic dielectric layers 114, 116, and 102, the light-emitting stack 134, the cathode electrode 136, the barrier element 118, and the inorganic encapsulation layers 142 and 146, which are arranged in the hole region HA and the surrounding area, to expose the surface of the substrate 101 or the multilayer buffer layer 112. Since the inorganic dielectric layers 114, 116, and 102, the light-emitting stack 134, and the inorganic encapsulation layers 142 and 146, which are arranged in the hole region HA, are removed through the through-hole 190, a laser alignment process for forming the substrate hole 120 is simplified.

[0045] Since the hole area HA is located in the active area AA, it can be surrounded by several subpixels SP, each containing a light-emitting element 130. At least one substrate hole 120 located in the hole area HA is represented as having a circular shape. Alternatively, the substrate hole 120 can be formed as having a polygonal or oval shape. The substrate hole 120 is formed by the multilayered buffer layer 112 and the substrate 101. The substrate hole 120 overlaps with the through hole 190 and has a smaller line width than the through hole 190.

[0046] An electronic component containing a camera, a loudspeaker, a flash source, or a biometric sensor such as a fingerprint sensor is arranged in the hole area HA. ​​The present invention describes a structure in which a camera module 160 is arranged in the hole area HA, as shown in Fig. The example shown in section 4 is described.

[0047] The camera module 160 contains a camera lens 164 and a camera control unit 162.

[0048] The camera control unit 162 is located on the rear of the substrate 101 of the display device and is connected to the camera lens 164.

[0049] The camera lens 164 is located in the substrate hole 120, which extends from the thin-film layer located at the lowest part of the active area AA (e.g., the substrate 101 or a backplate) to the thin-film layer located at the uppermost part of the active area AA (e.g., a polarizing plate 166). Consequently, the camera lens 164 is positioned facing a cover glass 168. Here, the substrate hole 120 has a smaller line width than the through-hole 190 and is positioned to overlap the through-hole 190. The substrate hole 120 is formed by the substrate 101, the inorganic cover layer 170, and the polarizing plate 166, or by the substrate 101 and the polarizing plate 166.

[0050] If the camera module 160 is located in the active area AA, a non-display area, i.e. a bezel area, of the display device can be minimized.

[0051] Fig. Figures 5A to 5E are sectional views showing a method for manufacturing the organic light-emitting display device that includes the substrate hole located in Fig. 2 is shown, possesses, illustrate.

[0052] In particular, as in Fig. Figure 5A shows a multilayer buffer layer 112 and an active buffer layer 114 formed on a substrate 101. Here, the substrate 101 is made of a plastic material that exhibits high flexibility, making the substrate 101 bendable. For example, the substrate 101 can be made of polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyethersulfone (PES), polyacrylate (PAR), polysulfone (PSF), or cycloolefin copolymer (COC).

[0053] Subsequently, an active layer 154 is formed on the active buffer layer 114 by a photolithography and etching process, and then a dielectric gate film 116, made of an inorganic dielectric material, is formed on the active layer 154. A gate electrode 152 and a lower contact electrode 182 are formed on the dielectric gate film 116 by a photolithography and etching process, and then a dielectric intermediate layer film 102, made of an inorganic dielectric material, is formed. The dielectric intermediate layer film 102 and the dielectric gate film 116 are patterned by a photolithography and etching process such that they form source and drain contact holes (not shown) through which the active layer 154 is exposed, and a first pad contact hole 186 through which the lower pad electrode is exposed.Simultaneously, the active buffer layer 114, the dielectric interlayer film 102, and the dielectric gate film 116 are removed from the hole region HA. Subsequently, the dielectric interlayer film 102, the dielectric gate film 116, and the active buffer layer 114 are patterned by a photolithography and etching process such that they form a barrier recess 110, thereby exposing the surface of the multilayer buffer layer 112. At this point, a section of the multilayer buffer layer 112 can be patterned by an etching process, thus exposing the side surface of the multilayer buffer layer 112 through the barrier recess 110.

[0054] Subsequently, an upper contact electrode 184 and a source and a drain electrode 156 and 158 are formed on the dielectric interlayer film 102 by a photolithography and etching process. Then, a planarization layer 104 and an anode electrode 132 are sequentially formed by a photolithography and etching process. Finally, a bank 138, an inner dam 108, a barrier element 118, and an outer dam 128 are simultaneously formed by a photolithography and etching process using the same mask.

[0055] A light-emitting stack 134 and a cathode electrode 136 are sequentially formed on the substrate 101, on which the bed 138 is formed, by a deposition process using a shadow mask. At this point, the light-emitting stack 134 and the cathode electrode 136 are separated by the barrier recess 110. Subsequently, at least one inorganic encapsulation layer 142 and 146 and at least one organic encapsulation layer 144 are layered onto the cathode electrode 136 to form an encapsulation unit 140. At this point, the organic encapsulation layer 144 is formed in the remaining areas, with the exception of the hole area HA and a pad area PDA between the inner dam 108 and the outer dam 128.

[0056] The same organic dielectric material as the organic encapsulation layer 144 is applied to the substrate 101, on which the encapsulation unit 140 is formed, to form an organic cover layer 148, as shown in Fig. Figure 5B shows that at this point, the organic cover layer 148 is formed in the remaining areas, with the exception of the hole region HA, by the barrier element 118. Subsequently, the inorganic encapsulation layers 142 and 146, the cathode electrode 136, the dielectric intermediate film 102, the dielectric gate film 116, and the active buffer layer 114 are etched by an etching process using the organic cover layer 148 as a mask to form a through-hole 190, as shown in Figure 5B. Fig. 5C is shown. Meanwhile, a section of the locking element 118 can be etched when the through-hole is formed.

[0057] Subsequently, an inorganic dielectric material is deposited on the entire surface of the substrate 101, in which the through-hole 190 is formed, to create an inorganic top layer 170. The inorganic top layer 170 and the organic top layer 148 are patterned by a photolithography and etching process, thereby creating a second pad contact hole 188 and removing the inorganic top layer 170 in the hole area HA, as shown in Fig. 5D is shown.

[0058] Subsequently, the multilayer buffer layer 112 and the substrate 101 are patterned by a laser alignment process to form a substrate hole 120, as shown in Fig. 5E is shown.

[0059] In the present invention, as described above, the organic top layer 148, which serves as a mask when forming the through-hole 190, is formed solely by a deposition process. Therefore, in the present invention, neither a photolithography process nor a peeling process is required when forming the organic top layer 148 and the through-hole 190. Consequently, it is possible to prevent damage to the light-emitting stack 134 caused by a peeling solution used during the peeling process.

[0060] Furthermore, in the present invention, the organic top layer 148 is formed by an application process after the encapsulation unit 140 has been formed, and at least one masking process is required to form the inorganic top layer 170, which is not formed in the hole area HA, thereby simplifying a masking process.

[0061] Furthermore, the thin film layers applied in the hole area HA are removed by a dry etching process to form the through hole 190, and then the substrate 101 is removed by a laser alignment process to form the substrate hole 120. Consequently, it is possible to minimize the number of thin films to be removed by the laser alignment process, thereby minimizing the occurrence of physical effects during the laser alignment process.

[0062] Fig. Figure 6 is a view showing an organic light-emitting display device according to a second embodiment of the present invention.

[0063] The organic light-emitting display device, which is in Fig. Figure 6 shows the same construction of the organic light-emitting display device as shown in Fig. As shown in Figure 2, except that the locking element 118 is located higher than the inner dam 108. Therefore, a detailed description of the corresponding components of the organic light-emitting display device is omitted.

[0064] The barrier element 118 is located on the second inorganic encapsulation layer 146, which is situated at the uppermost part of the encapsulation unit 140. Since the barrier element 118 is positioned higher than the inner dam 108, it is designed to have a smaller thickness than the inner dam 108. Consequently, the uppermost surface of the barrier element 118 is at the same level as, or higher than, the uppermost surface of the inner dam 108.

[0065] The barrier element 118 is made of an organic dielectric material, e.g., the same organic dielectric material as the bank 138 and / or the planarization layer 104 and / or the inner dam 108. Since the barrier element 118 is arranged on the second inorganic encapsulation layer 146 such that it overlaps the barrier recess 110, an undercut area formed by the barrier recess 110 is protected.

[0066] Since the barrier element 118 is arranged in such a way that it completely surrounds the substrate hole 120, it is possible to prevent the organic covering layer 148, which can be used as a moisture penetration path, from spreading to the substrate hole 120.

[0067] The organic top layer 148 is formed on the uppermost inorganic encapsulation layer 146 of the encapsulation unit 140 and is made of the same material as the organic encapsulation layer 144. Consequently, the organic top layer 148 is formed solely by a deposition process without a separate photomasking process, thus eliminating the need for a separate peeling process.

[0068] Since the organic top layer 148 does not contact the light-emitting stack 134, it is possible to prevent moisture from penetrating the light-emitting stack 134 through the organic top layer 148. Furthermore, since the organic top layer 148 is arranged on the encapsulation unit 140, it is possible to prevent the inorganic encapsulation layers 142 and 146, which are arranged in the emission zone EA, from being etched when the through-hole 190 is formed.

[0069] Fig. Figures 7A to 7E are sectional views showing a method for manufacturing the organic light-emitting display device, which includes the substrate hole located in Fig. 6 is shown, possess, illustrate.

[0070] In particular, as in Fig. Figure 7A shows a thin-film transistor (driver transistor) 150, pads 180, and a blocking notch 110 being formed on a substrate 101. Subsequently, a passivation film 124, a planarization layer 104, and an anode electrode 132 are sequentially formed by a photolithography and etching process. Then, a bank 138, an inner dam 108, and an outer dam 128 are simultaneously formed by a photolithography and etching process using the same mask.

[0071] A light-emitting stack 134 and a cathode electrode 136 of the light-emitting element 130 are sequentially formed on the substrate 101, on which the bench 138, the inner dam 108 and the outer dam 128 are formed. Subsequently, at least one inorganic encapsulation layer 142 and 146 and at least one organic encapsulation layer 144 are layered onto the cathode electrode 136 to form an encapsulation unit 140.

[0072] A light-sensitive organic dielectric material is applied to the substrate 101, on which the encapsulation unit 140 is formed, and patterned by a photolithography process to form a barrier element 118, as shown in Fig. Figure 7B shows that an organic dielectric material is then applied to the substrate 101, on which the barrier element 118 is formed, to create an organic cover layer 148, as shown in Figure 7B. Fig. Figure 7C shows that at this point, the organic cover layer 148 is formed in the areas other than the hole region HA by the barrier element 118. Subsequently, the inorganic encapsulation layers 142 and 146, the cathode electrode 136, the light-emitting stack 134, the dielectric intermediate film 102, the dielectric gate film 116, and the active buffer layer 114 in the hole region HA are etched by an etching process using the organic cover layer 148 and the barrier element 118 as a mask to form a through-hole 190. During this process, part of the barrier element 118 may be etched away as the through-hole 190 is formed.

[0073] Subsequently, an inorganic dielectric material is deposited over the entire surface of the substrate 101, forming the through-hole 190 to create an inorganic top layer 170. The inorganic top layer 170 and the organic top layer 148 are patterned by a photolithography and etching process, creating a second pad contact hole 188 and removing the inorganic top layer 170 in the hole area HA, as shown in Fig. 7D is shown.

[0074] Subsequently, the multilayer buffer layer 112 and the substrate 101 are patterned by a laser alignment process to form a substrate hole 120, as shown in Fig. 7E is shown.

[0075] In the present invention, as described above, the organic top layer 148, which serves as a mask when forming the through-hole, is formed solely by a deposition process. Therefore, in the present invention, neither a photolithography process nor a peeling process is required when forming the organic top layer 148. Consequently, it is possible to prevent damage to the light-emitting stack 134 caused by a peeling solution used during the peeling process.

[0076] Furthermore, in the present invention, the organic top layer 148 is formed by an application process after the encapsulation unit 140 has been formed, and at least one masking process is required to form the inorganic top layer 170, which is not formed in the hole area HA, thereby simplifying a masking process.

[0077] Furthermore, the thin film layers applied in the hole area HA are removed by a dry etching process to form the through hole 190, and then the substrate 101 is removed by a laser alignment process to form the substrate hole 120. Consequently, it is possible to minimize the number of thin films to be removed by the laser alignment process, thereby minimizing the occurrence of physical effects during the laser alignment process.

[0078] Meanwhile, a touch electrode and a touch buffer film, contained in a touch sensor, can be arranged between the encapsulation unit 140 and the organic cover layer 148. The touch electrode can be arranged on the touch buffer film in contact with the encapsulation unit 140, as shown in Fig. 7E is shown. Alternatively, the contact electrode can be arranged without the contact buffer film between the encapsulation unit 140 and the organic cover layer 148. The contact electrode can be arranged on the encapsulation unit 140 without the contact buffer film. In this case, the contact buffer film and the contact electrode on the encapsulation unit 140, which are produced by the manufacturing process shown in Fig. 7A and Fig. 7B is shown, has been formed, is formed sequentially and then the organic cover layer 148 and the inorganic cover layer 170 are formed by the manufacturing process shown in Fig. 7C and Fig. 7E is shown, formed sequentially, thereby completing the organic light-emitting display device which has the touch sensor.

[0079] Additionally, a dielectric contact film and / or the contact buffer film contained in the operating capacitance contact sensor, which has the first and second contact electrodes, can be formed such that they extend to the inner dam 108 and / or to the barrier element 118 and / or to the outer dam 128 and / or to the pad area PDA.

[0080] Furthermore, the inorganic top layer and the organic top layer according to the present invention can be used as the dielectric touch film and the touch buffer film contained in the touch sensor arranged on the encapsulation unit.

[0081] As can be seen from the description above, in the present invention the through-hole into which the camera module is inserted is arranged in the active area, making it possible to minimize the non-display area, i.e. the bezel area, of the display device.

[0082] Furthermore, in the present invention, the organic cover layer, which is used as a mask when the through-hole is formed, is formed solely by a deposition process, thus eliminating the need for a photolithography process and a peeling process when forming the organic cover layer and the through-hole. Consequently, it is possible to prevent damage to the light-emitting stack due to a peeling solution used during the peeling process.

[0083] Furthermore, the thin film layers located in the hole area are removed by a dry etching process to create a through-hole, and then the substrate is removed by a laser alignment process to form a substrate hole. Consequently, it is possible to minimize the number of thin films to be removed by the laser alignment process, thereby minimizing the occurrence of physical impacts during the laser alignment process.

[0084] It will be clear to those skilled in the art that various modifications and variations can be made to the present invention without altering its scope. Therefore, it is intended that the present invention covers such modifications and variations, provided they fall within the scope of the appended claims and their corresponding versions.

Claims

[1] Display device comprising an active area (AA), wherein the display device comprises: a substrate (101) which has a substrate hole (120) formed in the active area (AA) by the substrate (101); several light-emitting elements (130) arranged in the active area (AA) on the substrate (101); an encapsulation unit (140) arranged on the light-emitting elements (130); an organic covering layer (148) arranged on the encapsulation unit (140); an inner dam (108) which is arranged between the substrate hole (120) and the light-emitting element (130); a barrier element (118) which is arranged at least partially between the substrate hole (120) and the inner dam (108), and a barrier recess (110) arranged between the substrate hole (120) and the inner dam (108), wherein the locking element (118) is arranged such that it surrounds the substrate hole (120). [2] Display device according to claim 1, wherein the locking element (118) is made of the same material as the inner dam (108) and is arranged in the same plane as the inner dam (108) or the locking element (118) is made of a material different from the inner dam (108). [3] Display device according to claim 1 or 2, wherein the locking recess (110) is formed in a reverse conical shape. [4] Display device according to claim 1, 2 or 3, further comprising a contact electrode arranged between the encapsulation unit (140) and the organic cover layer (148). [5] Display device according to one of the preceding claims, wherein the encapsulation unit (140) comprises several inorganic encapsulation layers (142, 146) and an organic encapsulation layer (144) arranged between the several inorganic encapsulation layers (142, 146) and the inorganic encapsulation layers (142, 146) overlap with the locking recess (110). [6] Display device according to one of the preceding claims, wherein the locking recess (110) is arranged between the inner dam (108) and the locking element (118). [7] Display device according to any one of the preceding claims, further comprising: a control transistor (150) which is connected to the light-emitting element (130); a planarization layer (104) arranged on the drive transistor (150); and a bank (138) which exposes an anode electrode (132) of the light-emitting elements (130), wherein The inner dam (108) and the barrier element (118) comprise the following: a lower layer (108a) formed from the same material as the planarization layer (104); and an upper layer (108b) which is made of the same material as the bench (138). [8] Display device according to one of the preceding claims, wherein the locking element (118) is arranged in a plane that is different from a plane in which the inner dam (108) is arranged. [9] Display device according to claim 8, wherein the locking element (118) is arranged on the encapsulation unit (140) and the inner dam (108) is arranged under the encapsulation unit (140). [10] Display device according to claim 8 or 9, wherein the locking recess (110) overlaps with the locking element (118). [11] Display device according to one of the preceding claims, further comprising a through-hole (190) formed by several thin-film layers (114, 116, 102, 118, 134, 136, 142, 146) arranged between the substrate (101) and the organic top layer (148). [12] Display device according to claim 11, which further comprises an inorganic cover layer (170) arranged on side surfaces of the thin film layers (114, 116, 102, 118, 134, 136, 142, 146) exposed through the through hole (190) and on the organic cover layer (148). [13] Display device according to the preceding claim, further comprising: a pad area (PDA), several pads (180) arranged on the substrate (101) in the pad area (PDA); and a pad contact hole (188) formed by the organic cover layer (148) arranged on the pads (180) to expose the pads (180) and / or wherein the pad contact hole (188) is formed by the inorganic cover layer (170). [14] Display device according to any one of the preceding claims 5-13, wherein the organic cover layer (148) is formed from the same material as the organic encapsulation layer (144). [15] Display device according to one of the preceding claims, further comprising an electronic part arranged in the substrate hole, wherein the electronic part preferably includes a camera, a loudspeaker, a flash source or a biometric sensor.

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