Semiconductor device and method for manufacturing a semiconductor device

Abstract

Semiconductor device comprising: a semiconductor module (1) comprising a semiconductor chip (2), an integrated control circuit (IC) (3) configured to control a control of the semiconductor chip (2), and a housing (7) that seals the semiconductor chip (2) and the control IC (3) within an insulating material; a substrate (11) on which the semiconductor module (1) is mounted; and a filler (14) provided between a lower surface of the housing (7) of the semiconductor module (1) and the substrate (11), wherein the substrate (11) contains a through-hole (12) which is provided in a position below the housing (7) and closer to the control IC (3) than to the semiconductor chip (2) in the housing (7).

Description

BACKGROUND OF THE INVENTION Area of ​​the invention

[0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. Description of the background technology

[0002] Surface-mount power semiconductor modules are generally used without heat sinks. In this case, heat generated within a semiconductor chip inside a package is dissipated from its surface to the air via a resin forming the package, or it is dissipated from inside the package to a substrate via an externally connected terminal. The efficiency of heat dissipation via a path that transfers heat from the surface of a package to the air depends on the size of the power semiconductor module package, and consequently, improving this efficiency is challenging. Therefore, the efficiency of heat dissipation via a path that transfers heat from inside a package to a substrate via a terminal has been improved by increasing the surface area of ​​the substrate's circuitry.However, with increasing demand for a smaller substrate, increasing the area of ​​a circuit structure becomes impractical, raising concerns that an increase in the performance of a semiconductor module is limited due to the restriction of the heat dissipation area.

[0003] To improve the heat dissipation performance of a semiconductor element, JP 2017 - 099 035 A discloses a technology in which a filler for heat dissipation is injected between a semiconductor element and a metal substrate through an injection hole provided in the metal substrate.

[0004] When a filler is placed between the package of a semiconductor module and the circuit substrate on which the semiconductor module is mounted, the package and the substrate come into close contact through the filler. Consequently, heat generated within the semiconductor chip's package is transferred from a lower portion of the package to the substrate. However, if such an injection hole, provided in the substrate for injecting the filler, is located below a semiconductor chip that generates a significant amount of heat, heat generated by the semiconductor chip is transferred from a lower portion of the package to the injection hole. Specifically, the injection hole impairs the heat dissipation effect from the semiconductor chip to the substrate.

[0005] US 2015 / 0144991A1 addresses power modules with IGBTs as semiconductor chips and an IC as their control circuit chip, which is sealed in a package. A filler, referred to as a carrier, is provided for improved thermal dissipation below the heat-generating IGBT on the underside of the package. Additionally, a substrate with a through-hole, in which the filler is located, is provided; however, this substrate is situated within the package of the semiconductor module.

[0006] US 2017 / 0077069A1 describes semiconductor devices comprising a semiconductor module with a power semiconductor chip and its control IC, sealed within a package. The semiconductor module is mounted on the substrate, which has through-holes for improved thermal heat dissipation. The through-holes in contact with a metallization are located closer to the control IC than to the power semiconductor chip.

[0007] US 2014 / 0252649A1 deals with semiconductor devices with a controller that drives memory semiconductor chips. SUMMARY

[0008] The present invention was made to solve the problems described above and provides a semiconductor device that ensures the injectability of a filler and improves heat dissipation performance.

[0009] A semiconductor device according to the present disclosure comprises a semiconductor module, a substrate, and a filler. The semiconductor module contains a semiconductor chip, an integrated control circuit (IC) configured to control the semiconductor chip, and a housing that seals the semiconductor chip and the control IC with an insulating material. The semiconductor module is mounted on the substrate. The filler is provided between a lower surface of the semiconductor module housing and the substrate. The substrate includes a through-hole located below the housing and closer to the control IC than to the semiconductor chip within the housing.

[0010] According to the present disclosure, the semiconductor device which ensures the injectability of the filler and improves the heat dissipation performance is provided.

[0011] These and other tasks, features, aspects and advantages of the present disclosure will become more apparent from the following detailed description of the present disclosure when it is taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 is a top view illustrating a configuration of a semiconductor device according to the first embodiment. Fig. Figure 2 is a cross-sectional view illustrating a configuration of the semiconductor device according to the first embodiment. Fig. Figure 3 is a flowchart illustrating a method for manufacturing the semiconductor device according to the first embodiment. Fig. Figure 4 is a top view illustrating a configuration of a semiconductor device according to the second embodiment. Fig. Figure 5 is a cross-sectional view illustrating an example of a configuration of a semiconductor device according to the third embodiment. Fig. Figure 6 is a cross-sectional view illustrating another example of a configuration of the semiconductor device according to the third embodiment. Fig. Figure 7 is a top view illustrating a configuration of a semiconductor device according to the fourth embodiment. Fig. Figure 8 is a cross-sectional view illustrating a configuration of a semiconductor device according to the fifth embodiment. Fig. Figure 9 is a top view illustrating a configuration of a semiconductor device according to the sixth embodiment. DESCRIPTION OF PREFERRED EXECUTION FORMS<Erste Ausführungsform>

[0012] Fig. Figure 1 is a top view illustrating a configuration of a semiconductor device according to the first embodiment. Fig. Figure 2 is a cross-sectional view illustrating a configuration of the semiconductor device according to the first embodiment, and illustrates a path along the [unclear] in [unclear] Fig. 1 illustrated line AA' taken cross-section.

[0013] The semiconductor device comprises a semiconductor module 1, a substrate 11 and a filler 14. The semiconductor module 1 comprises a semiconductor chip 2, an integrated control circuit (IC) 3, a housing 7 and conductor parts 8A and 8B.

[0014] Semiconductor chip 2 contains a semiconductor element and is made of, for example, a semiconductor such as silicon (Si) or a so-called wide-bandgap semiconductor such as silicon carbide (SiC) and methane (GaN). Semiconductor chip 2 contains, for example, an insulated-gate bipolar transistor (IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), a Schottky barrier diode, or the like. Semiconductor chip 2 is, for example, a power semiconductor chip.

[0015] The control IC 3 is an IC used to control the operation of the semiconductor chip 2. The control IC 3 is connected to the semiconductor chip 2 by a wire 4. The amount of heat generated by the control IC 3 during an operation is less than the amount of heat generated by the semiconductor chip 2 during an operation.

[0016] The conductor section 8A has one end (the first end) that is connected inside the housing 7 to the semiconductor chip 2 via a bonding material 5, and the other end (the second end) that is exposed to the outside of the housing 7. Similarly, the conductor section 8B has its first end that is connected to the control IC 3 via a bonding material 6, and its second end that is exposed to the outside of the housing 7. The second ends of the conductor sections 8A and 8B according to the first embodiment project to the outside of the housing 7. The second ends of the conductor sections 8A and 8B function as connection terminals.

[0017] The housing 7 internally contains the semiconductor chip 2, the control IC 3 and the first ends of the conductor parts 8A and 8B and seals these components with a molded resin.

[0018] The substrate 11 comprises a circuit structure 10 and a through-hole 12. The circuit structure 10 is bonded to the second ends of the conductor sections 8A and 8B by bonding materials 9. In this way, the semiconductor module 1 is mounted on the substrate 11. The through-hole 12 is located below the housing 7 and closer to the control IC 3 than to the semiconductor chip 2 in the housing 7. For example, in the Fig. Figure 1 illustrates that the distance from the edge of the through-hole 12 to the control IC 3 is shorter than the distance from the same edge of the through-hole 12 to the semiconductor chip 2. Alternatively, for example, the distance from the center of the through-hole 12 to the control IC 3 is shorter than the distance from the same center of the through-hole 12 to the semiconductor chip 2. As shown in Fig. As illustrated in Figure 1, for example, the through-hole 12 is provided in an area 13 below the control IC 3.

[0019] The filler 14 is provided between the lower surface of the housing 7 of the semiconductor module 1 and the substrate 11. The filler 17 is, for example, a thermally conductive paste.

[0020] Next, a method for manufacturing the semiconductor device according to the first embodiment is described. Fig. Figure 3 is a flowchart illustrating a method for manufacturing the semiconductor device according to the first embodiment.

[0021] In step S1, the semiconductor module 1, which includes the semiconductor chip 2, the control IC 3 and the housing 7, and the substrate 11 containing the through hole 12 are prepared.

[0022] In step S2, the semiconductor module 1 is mounted on the substrate 11 such that the through-hole 12 is located in a position below the housing 7 and closer to the control IC 3 than to the semiconductor chip 2 in the housing 7.

[0023] In step S3, the filler 14 is injected through the through-hole 12 into a space between the lower surface of the housing 7 of the semiconductor module 1 and the substrate 11. Specifically, the through-hole 12 is an injection hole for the filler 14. The manufacturing process described above ensures that the in Fig. 1 and Fig. 2 illustrated semiconductor devices were produced.

[0024] In summary, the semiconductor device according to the first embodiment comprises the semiconductor module 1, the substrate 11, and the filler 14. The semiconductor module 1 contains the semiconductor chip 2, the control IC 3, which controls the operation of the semiconductor chip 2, and the housing 7, which seals the semiconductor chip 2 and the control IC 3 with an insulating material. The semiconductor module 1 is mounted on the substrate 11. The filler 14 is provided between the lower surface of the housing 7 of the semiconductor module 1 and the substrate 11. The substrate 11 contains the through-hole 12, which is located below the housing 7 and closer to the control IC 3 than to the semiconductor chip 2 within the housing 7.

[0025] The housing 7 and the substrate 11 come into close contact with each other via the filler 14, and thus heat generated in the semiconductor chip 2 is transferred from a lower part of the housing 7 to the substrate 11. If the through-hole 12 is located near the semiconductor chip 2, which generates a large amount of heat, the heat generated in the semiconductor chip 2 is transferred to the through-hole 12. Specifically, the through-hole 12 impairs the heat dissipation effect from the semiconductor chip 2 to the substrate 11. However, according to the first embodiment, the through-hole 12 is located closer to the control IC 3, which generates a small amount of heat, than to the semiconductor chip 2. Thus, heat generated in the semiconductor chip 2 is transferred more efficiently to the substrate 11 than to the through-hole 12. Such a heat dissipation path increases the heat dissipation performance of the semiconductor device.In particular, if the semiconductor chip 2 is a high-power semiconductor chip, it generates a large amount of heat. Consequently, the semiconductor device according to the first embodiment exhibits greater effects when the semiconductor chip 2 is a high-power semiconductor chip. Furthermore, the through-hole 12 is located below the housing 7 of the semiconductor chip 2, thus allowing the filler 14 to be injected precisely and efficiently.

[0026] The first embodiment described an example of a surface-mounted power semiconductor device. However, the semiconductor device is not limited to having such a configuration and can be a lead-insertion power semiconductor device. <Zweite Ausführungsform>

[0027] A semiconductor device and a method for manufacturing the semiconductor device according to the second embodiment are described. The second embodiment is a subordinate concept of the first embodiment. Note that a description of configurations and operations similar to those of the first embodiment is omitted.

[0028] Fig. Figure 4 is a top view illustrating a configuration of a semiconductor device according to the second embodiment. The semiconductor device according to the second embodiment is identical to the semiconductor device according to the first embodiment, except for the configuration of the substrate 11.

[0029] The substrate 11 contains, in addition to the through-hole 12, slots 15. Each slot 15 is located within the housing 7 relative to a root portion and below the housing 7. The root portion is the area where the conductor part 8A or 8B is exposed from the outer surface of the housing 7. Furthermore, the slots 15 penetrate the substrate 11. Although two slots 15 are provided in the second embodiment, the number of slots 15 is not limited to two. The width of each slot 15 is, for example, 1 mm.

[0030] In the method for manufacturing the semiconductor device according to the second embodiment, the step for preparing the semiconductor module 1 and the substrate 11 and the step for mounting the semiconductor module 1 on the substrate 11 are similar to those in Fig. 3 illustrated steps S1 and S2.

[0031] If, in step S3, excess filler 14 is injected through the through-hole 12 into a space between the housing 7 and the substrate 11, the excess filler 14 falls through the slots 15 onto a lower part of the substrate 11.

[0032] In this way, the slots 15 can prevent the filler 14 from adhering to the second ends of the conductor sections 8A and 8B. In particular, if the filler 14 is conductive, the slots 15 can prevent a short circuit between the conductors. <Dritte Ausführungsform>

[0033] A semiconductor device and a method for manufacturing the semiconductor device according to the third embodiment are described. The third embodiment is a subordinate concept of the first embodiment. Note that a description of configurations and operations similar to those of the first or second embodiment is omitted.

[0034] Fig. Figure 5 is a cross-sectional view illustrating an example of a configuration of a semiconductor device according to the third embodiment. Fig. Figure 6 is a cross-sectional view illustrating another example of a configuration of the semiconductor device according to the third embodiment. The semiconductor device according to the third embodiment is the same as the semiconductor device according to the first embodiment, except for the configuration of the housing 7 of the semiconductor module 1.

[0035] As in Fig. As illustrated in Figure 5, the housing 7 contains a projecting sub-section 16 on its lower sub-section. Alternatively, as shown in Figure 5, the housing 7 contains a projecting sub-section 16 on its lower sub-section. Fig. As illustrated in 6, the housing 7 has a recessed sub-area 17.

[0036] In the method for manufacturing the semiconductor device according to the third embodiment, the step for preparing the semiconductor module 1 and the substrate 11 and the step for mounting the semiconductor module 1 on the substrate 11 are similar to those in Fig. 3 illustrated steps S1 and S2.

[0037] If, in step S3, excess filler 14 is injected through the through-hole 12 into a space between the housing 7 and the substrate 11, the protruding sub-area 16 or the recessed sub-area 17 captures the excess filler 14.

[0038] In this way, the projecting sub-area 16 or the recessed sub-area 17 of the housing 7 prevents the filler 14 from adhering to the second ends of the conductor parts 8A and 8B. In particular, if the filler 14 is conductive, the projecting sub-area 16 or the recessed sub-area 17 prevents a short circuit between the conductor parts 8A and 8B. <Vierte Ausführungsform>

[0039] A semiconductor device and a method for manufacturing the semiconductor device according to the fourth embodiment are described. The fourth embodiment is a subordinate concept of the first embodiment. Note that a description of configurations and operations similar to those of any of the first to third embodiments is omitted.

[0040] Fig. Figure 7 is a top view illustrating a configuration of a semiconductor device according to the fourth embodiment. The semiconductor device according to the fourth embodiment is identical to the semiconductor device according to the first embodiment, except for the configuration of the substrate 11. The substrate 11 contains a through-hole 18 with a protruding shape in plan view.

[0041] In the method for manufacturing the semiconductor device according to the fourth embodiment, the step for preparing the semiconductor module 1 and the substrate 11 and the step for mounting the semiconductor module 1 on the substrate 11 are similar to those in Fig. 3 illustrated steps S1 and S2.

[0042] The filler 14, injected through the through-hole 18 with its protruding shape, spreads evenly across the entire lower portion of the housing 7. The through-hole 18 with its protruding shape improves the injectability of the filler 14. <Fünfte Ausführungsform>

[0043] A semiconductor device and a method for manufacturing the semiconductor device according to the fifth embodiment are described. The fifth embodiment is a subordinate concept of the first embodiment. Note that a description of configurations and operations similar to those of any of the first through fourth embodiments is omitted.

[0044] Fig. Figure 8 is a cross-sectional view illustrating a configuration of a semiconductor device according to the fifth embodiment. The semiconductor device according to the fifth embodiment is the same as the semiconductor device according to the first embodiment, except for the configuration of the substrate 11.

[0045] The substrate 11 contains a metal structure 19 that covers a lateral surface of the through-hole 12 and extends from the edge of the through-hole 12 to a front surface and a rear surface of the substrate 11. Specifically, the metal structure 19 and the through-hole 12 form a so-called "contact hole" or "through-hole". It is preferable that the size of the metal structure 19 extending into the surface of the substrate 11 be the same as the size of the housing 7.

[0046] The metal structure 19, as described above, diffuses heat transferred from the semiconductor chip 2 via the housing 7 and the filler 14 to the rear surface of the substrate 11, thereby increasing the heat dissipation effect. <Sechste Ausführungsform>

[0047] A semiconductor device and a method for manufacturing the semiconductor device according to the sixth embodiment are described. The sixth embodiment is a subordinate concept of the first embodiment. Note that a description of configurations and operations similar to those of any of the first through fifth embodiments is omitted.

[0048] Fig. Figure 9 is a top view illustrating a configuration of a semiconductor device according to the sixth embodiment. The semiconductor device according to the sixth embodiment is the same as the semiconductor device according to the first embodiment, except for a configuration of the substrate 11. Note that, although an illustration of the semiconductor chip 2 and the control IC 3 is shown in Fig. 9 is omitted, the positions of those components are the same as those in the embodiment.

[0049] The substrate 11 further contains at least one small hole 20 located below the housing 7. The small hole 20 is smaller than the through-hole 12 and has a lateral surface that is covered by the metal structure 19. In this case, the lateral surface of the through-hole 12 need not necessarily be covered by the metal structure 19. It is preferable for the size of the small hole 20 to be as small as possible to ensure an area for close contact between the lower surface of the housing 7 and the substrate 11. The diameter of the small hole 20 is, for example, 0.4 mm.

[0050] The fine hole 20 diffuses heat transferred from the semiconductor chip 2 via the housing 7 and the filler 14 to the rear surface of the substrate 11, thereby increasing the heat dissipation effect.

[0051] Note that in the present invention any embodiment can be combined.

Claims

[1] Semiconductor device comprising: a semiconductor module (1) comprising a semiconductor chip (2), an integrated control circuit (IC) (3) configured to control a control of the semiconductor chip (2), and a housing (7) that seals the semiconductor chip (2) and the control IC (3) within an insulating material; a substrate (11) on which the semiconductor module (1) is mounted; and a filler (14) provided between a lower surface of the housing (7) of the semiconductor module (1) and the substrate (11), wherein the substrate (11) contains a through-hole (12) which is provided in a position below the housing (7) and closer to the control IC (3) than to the semiconductor chip (2) in the housing (7). [2] Semiconductor device according to claim 1, wherein the semiconductor module (1) further comprises a conductor section (8A, 8B) having a first end connected to the semiconductor chip (2) or the control IC (3) inside the housing (7) and a second end exposed from the inside of the housing (7) to the outside, the substrate (11) further includes a slot (15) which is provided at a position within the housing (7) in relation to a base end part area and below the housing (7), and the base end section is a sub-section where the conductor wire (8A, 8B) is exposed from an outer surface of the housing (7). [3] Semiconductor device according to claim 1 or 2, wherein the housing (7) includes a protruding partial area (16) or a recessed partial area (17) in a lower partial area of ​​the housing (7). [4] Semiconductor device according to any one of claims 1 to 3, wherein the through-hole (18) has a protruding shape in plan view. [5] Semiconductor device according to any one of claims 1 to 4, wherein the substrate (11) further comprises a metal structure (19) covering a lateral surface of the through-hole (12) and extending from an edge of the through-hole (12) to a front surface and a rear surface of the substrate (11). [6] Semiconductor device according to claim 5, wherein the substrate (11) further contains a fine hole (20) at a position below the housing and the fine hole (20) is smaller than the through hole (12) and has a lateral surface that is covered by the metal structure (19). [7] Method for manufacturing a semiconductor device comprising the steps: Preparing a semiconductor module (1) comprising a semiconductor chip (2), an integrated control circuit (IC) (3) configured to control a control of the semiconductor chip (2), a housing (7) sealing the semiconductor chip (2) and the control IC (3) with an insulating material, and a substrate (11) containing a through-hole (12); Mounting the semiconductor module (1) on the substrate (11) such that the through-hole (12) is located in a position below the housing (7) and closer to the control IC (3) than to the semiconductor chip (2) in the housing (7); Injecting a filler (14) through the through-hole (12) into a space between a lower surface of the housing (7) of the semiconductor module (1) and the substrate (11).

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