Display device

Abstract

Display device (100) comprising the following: a substrate (200) having an active area (AA) designed to display images and a non-active area (NA) at the perimeter of the active area (AA), wherein the non-active area (NA) has a first routing area (RA1) and a second routing area (RA2); a transistor (DRT) that is arranged on the substrate (200) in the active region (AA); a device insulating layer (1160) arranged over the transistor (DRT); a pixel electrode (PE) arranged above the device insulating layer (1160) and electrically connected via a contact hole in the device insulating layer (1160) to a source electrode (SE) or a drain electrode (DE) of the transistor (DRT); an emission layer (EL) that is positioned above the pixel electrode (PE); a common electrode (CE) positioned above the emission layer (EL); and an encapsulation layer (550) arranged above the common electrode (CE), located in the active area (550) and the first route area (RA1) and having an inclined surface (1100) in the first route area (RA1), wherein the display device (100) comprises at least one side-edge contact electrode (STE) located in at least one of the first route area (RA1) of the inactive area (NA), the second route area (RA2) of the inactive area (NA) and / or a combination thereof, wherein the side-edge contact electrode (STE) overlaps the inclined surface (1100) of the encapsulation layer (550) in the non-active area (NA) or is positioned further outwards in the non-active area (NA) than the inclined surface (1100) of the encapsulation layer (550).

Description

Background Technical field

[0001] The embodiments refer to a display device. Discussion of the state of the art

[0002] US 2018 / 0061899 A1 describes an organic light-emitting display with a touch sensor. The organic light-emitting display includes a compensation film with a planar surface, designed to cover ridges that form a boundary with an organic encapsulation layer, and the compensation film has a planarized surface between a region above the ridges and a boundary region between the ridges and the organic encapsulation layer.

[0003] US 2015 / 0070312 A1 describes a display with a touch window that includes a substrate in which first and second active areas are defined. A first sensing electrode is provided on the first active area to detect a position, and a second sensing electrode is provided in the second active area to detect a position.

[0004] As the information society develops, the demand for various types of image display devices is also increasing. In this respect, a number of display devices, such as liquid crystal displays (LCDs), plasma displays, and organic light-emitting diode displays (OLEDs), have recently found widespread application.

[0005] Such a display device (especially a mobile device such as a smartphone or tablet computer) is typically equipped with physical hardware buttons, each performing a specific function (e.g., volume control or power on / off), located in a bezel around the perimeter of a screen on which images are displayed. The presence of such physical hardware buttons can inevitably increase the size of the display device and the number of components, and can lead to manufacturing difficulties. Summary

[0006] Accordingly, the purpose of the present disclosure is to provide a display device that substantially avoids one or more of the problems arising from limitations and disadvantages of the prior art.

[0007] The purpose of the present disclosure is to provide a display device with a structure capable of overcoming design limitations caused by a physical hardware button, thereby enabling better and more creative designs and reductions in the size and number of components required therein.

[0008] It is also a purpose of the present disclosure to create a display device capable of realizing the functions of physical hardware buttons without being equipped with such buttons.

[0009] It is also an objective of the present disclosure to provide a display device capable of implementing one or more touch-sensing soft keys in the bezel, so that all physical hardware keys can be removed from the bezel.

[0010] Furthermore, it is an objective of the present disclosure to provide a display device with a touch sensor structure having side-edge touch electrodes at a location on a display panel corresponding to the bezel, in order to implement the soft key(s).

[0011] Additional features and aspects are set forth in the following description and are partly evident from the description or can be learned by practicing the inventive concepts provided herein. Other features and aspects of the concepts according to the invention can be realized and achieved through the structure that is particularly highlighted in or can be derived from the written description, the claims thereto, and the accompanying drawings.

[0012] These problems are solved by the subject matter of the independent claim. Further advantageous embodiments and refinements are described in the respective dependent claims.

[0013] According to one aspect of the present disclosure, a display device may comprise: a substrate having an active area on which images are displayed and an inactive area in which no images are displayed, the inactive area having a first route area and a second route area; a transistor arranged above the substrate and in the active area; a device insulating layer arranged above the transistor; a pixel electrode arranged above the device insulating layer and electrically connected via a contact hole in the device insulating layer to a source electrode or a drain electrode of the transistor; an emission layer arranged above the pixel electrode; a common electrode arranged above the emission layer;an encapsulation layer arranged above the common electrode, located in the active area and in the first route area, and having an inclined surface in the first route area; one or more dams arranged at a boundary between the first route area and the second route area, having a higher height than the surroundings; and a side-edge contact electrode arranged in the first route area, the second route area and / or a combination thereof.

[0014] According to another aspect of the present disclosure, a display device comprises: a substrate having an active area designed for displaying images and a non-active area around the perimeter of the active area, the non-active area comprising a first route area and a second route area; a transistor arranged on the substrate in the active area; a device insulating layer arranged over the transistor; an encapsulation layer arranged over the device insulating layer, located in the active area and in the first route area, and having an inclined surface in the first route area; and at least one side-edge contact electrode arranged in the first route area, the second route area, and / or a combination thereof.

[0015] The display device according to aspects of the present disclosure may have one or more of the following features.

[0016] The side-edge contact electrode can overlap the inclined surface of the encapsulation layer, e.g. in the first route area.

[0017] The side-edge touch electrode, which overlaps the inclined surface of the encapsulation layer, may contain a touch sensor material located in the active area.

[0018] The side-edge contact electrode can be positioned further out than one or more dams, e.g. in the second route area.

[0019] The side-edge touch electrode, which is located further out than the one or more dams, may contain a display electrode material or a touch sensor material (i.e., a touch sensor metal) located in the active area.

[0020] The display device may further comprise: a first insulating layer arranged beneath the side-edge contact electrode; a metal layer arranged beneath the first insulating layer; a second insulating layer arranged beneath the metal layer; and a gate electrode material layer arranged beneath the second insulating layer.

[0021] The gate electrode material layer can contain a gate electrode material that is the same as that of a gate electrode of the transistor.

[0022] The side-edge contact electrode can contain a source / drain electrode material that is the same as that of a source electrode and a drain electrode of the transistor.

[0023] The side-edge contact electrode can be electrically connected to the metal layer via a contact hole in the first insulating layer. The metal layer can be a layer that increases the effective electrode area of ​​the side-edge contact electrode, or a side-edge contact conductor through which a signal is transmitted.

[0024] The metal layer can be electrically connected to the gate electrode material layer via a contact hole in the second insulating layer. The gate electrode material layer can be a layer that increases the effective electrode area of ​​the side-edge touch electrode, or the side-edge touch conductor through which a signal is transmitted.

[0025] The side-edge contact electrode can be electrically connected to the gate electrode material layer via a double contact hole in the first insulating layer and the second insulating layer.

[0026] The display device may further comprise: a first insulating layer arranged beneath the side-edge contact electrode; a metal layer arranged beneath the first insulating layer; a second insulating layer arranged beneath the metal layer; and a gate electrode material layer arranged beneath the second insulating layer.

[0027] The gate electrode material layer can contain a gate electrode material that is the same as that of a gate electrode of the transistor. The side-edge contact electrode can contain a pixel electrode material that is the same as that of the pixel electrode.

[0028] In the active region, a source / drain electrode material layer can be arranged above the first insulating layer. In the inactive region, a pixel electrode material layer, which provides the side-edge contact electrode, can be arranged above the first insulating layer.

[0029] The side-edge touch electrode can be electrically connected to the metal layer via a contact hole in the first insulating layer, or to the gate electrode material layer via a double contact hole in both the first and second insulating layers. The metal layer or the gate electrode material layer can be a layer that increases the effective electrode area of ​​the side-edge touch electrode, or a side-edge touch conductor through which a signal is transmitted.

[0030] In a case where the side-edge contact electrode is electrically connected to the metal layer via the contact hole in the first insulating layer, the metal layer can be electrically connected to the gate electrode material layer via a contact hole in the second insulating layer.

[0031] The indicator device may further comprise: a source / drain electrode material layer arranged above the first insulating layer, containing a source / drain electrode material identical to that of a source and drain electrode of the transistor; and a circumferential insulating layer arranged above the source / drain electrode material layer, located beneath the side-edge touch electrode, containing an insulating material identical to that of the device's insulating layer, and situated in the inactive region. The source / drain electrode material layer may be a layer that increases the effective electrode area of ​​the side-edge touch electrode or a side-edge touch conductor through which a signal is transmitted.

[0032] The side-edge contact electrode can be electrically connected to the source / drain electrode material layer via a contact hole in the circumferential insulating layer.

[0033] The source / drain electrode material layer can be electrically connected to the metal layer via a contact hole in the first insulating layer, or electrically connected to the gate electrode material layer via a double contact hole in the first insulating layer and the second insulating layer.

[0034] In a case where the source / drain electrode material layer is electrically connected to the metal layer via the contact hole in the first insulating layer, the metal layer can be electrically connected to the gate electrode material layer via a contact hole in the second insulating layer.

[0035] The side-edge touch electrode can be electrically connected to the metal layer via a double contact hole in the circumferential insulating layer and the first insulating layer, or to the gate electrode material layer via a triple contact hole in the circumferential insulating layer, the first insulating layer, and the second insulating layer. The metal layer or the gate electrode material layer can be a layer that increases the effective electrode area of ​​the side-edge touch electrode, or a side-edge touch conductor through which a signal is transmitted.

[0036] The display device may further comprise: several touch sensors arranged above the encapsulation layer in the active area; and several touch lines connecting the multiple touch sensors to a touch field section arranged in the inactive area.

[0037] The multiple touch lines can be connected to or extend from multiple touch sensors located in the active area, extend downwards along the inclined surface of the encapsulation layer, extend over the one or more dams and be connected to the touch field section.

[0038] The side-edge touch electrode can be made of the same metal as the touch sensor. The side-edge touch electrode can be positioned to overlap the inclined surface of the encapsulation layer, or it can be positioned further outward than the one or more dams.

[0039] The multiple touch sensors can comprise multiple touch electrodes and multiple bridges. Each bridge can connect two adjacent touch electrodes among the multiple touch electrodes. The multiple touch electrodes and the multiple bridges can be arranged in different layers, with a sensor insulating layer between them.

[0040] The side-edge contact electrode can contain a contact electrode metal that is the same as that of the multiple contact electrodes, or a bridge metal that is the same as that of the multiple bridges.

[0041] The multiple touch electrodes can include a first touch electrode extending to the first route region of the inactive area. The side-edge touch electrode can include a first side-edge touch electrode that intersects a touch electrode section of the first touch electrode extending to the first route region.

[0042] The display device may further include a touch detection circuit which provides a touch control signal with a variable voltage level to the touch electrode section of the first touch electrode, extends to the first route area and detects a touch according to a change in the capacitance of the side edge touch electrode.

[0043] The contact electrode section of the first contact electrode, which extends to the first route area, and the side edge contact electrode can be arranged in a single layer.

[0044] The contact electrode section of the first contact electrode, extending to the first route region, may include: a first contact electrode section that is closer to the active region than the side-edge contact electrode; a second contact electrode section that is farther from the active region than the side-edge contact electrode; and a bridge among the multiple bridges that connects the first contact electrode section and the second contact electrode section.

[0045] The contact electrode section of the first contact electrode, which extends to the first route area, can extend beyond the first route area to the second route area.

[0046] The side-edge contact electrode may further comprise a second side-edge contact electrode that intersects the contact electrode section of the first contact electrode, extending to the second route area.

[0047] The multiple touch sensors can include a first touch sensor that extends to the first route area of ​​the inactive area. A touch sensor section of the first touch sensor that extends to the first route area can correspond to the side-edge touch electrode. The touch sensor section can contain a touch electrode metal that is the same as that of the multiple touch electrodes, or a bridge metal that is the same as that of the multiple bridges.

[0048] The display device may further comprise: a side-edge touch line arranged in the first route area, the second route area and / or a combination thereof, and electrically connected to the side-edge touch electrode; and a touch detection circuit that detects a touch according to a change in the capacitance of the side-edge touch electrode through the side-edge touch line and executes a predetermined keying process depending on whether the touch is detected or not.

[0049] The substrate can be curved; part of the substrate corresponding to the active area can be directed forward, and part of the substrate corresponding to the second route area can be directed to the sides.

[0050] According to embodiments, the display device can have a structure capable of overcoming design limitations caused by a physical hardware button, thereby enabling better and more creative designs and reductions in the size and number of components required.

[0051] In addition, according to embodiments, the display device can realize the functions of physical hardware buttons without being equipped with such buttons.

[0052] Furthermore, according to embodiments, the display device can implement touch-sensing soft keys in the bezel in such a way that all physical hardware keys can be removed from the bezel.

[0053] Furthermore, according to embodiments, the display device can have a touch sensor structure that has touch electrodes on the side edge at a location on a display panel corresponding to the bezel in order to implement the soft key.

[0054] It is understood that both the preceding general description and the following detailed description are exemplary and explanatory and are intended to provide a further explanation of the concepts according to the invention. Brief description of the drawings

[0055] The accompanying drawings, which are included for a better understanding of the disclosure and form part of this application, illustrate embodiments of the disclosure and, together with the description, serve to explain various principles; they show: Fig. 1 a display device according to embodiments; Fig. 2A and Fig. 2B a substrate of the display device according to embodiments; Fig. 3 a touch sensor structure of the display device according to embodiments; Fig. 4 a replacement circuit for each of the subpixels of the display device according to embodiments; Fig. 5 a schematic cross-sectional view of the display device according to embodiments; Fig. 6 to 10 examples of side-edge contact electrodes in the display device according to embodiments; Fig. 11 to 18 several cross-sectional views along line AA' in the plan views of Fig. 6 and Fig. 7; Fig. 19 a cross-sectional view along line BB' in the top view of Fig. 8; Fig. 20 a cross-sectional view along line CC' in the top view of Fig. 9; Fig. 21 and Fig. 22 cross-sectional views along line DD' in the plan view of Fig. 10; and Fig. 23 examples of the first to third soft keys implemented in the side-edge touch detection area of ​​the display device according to embodiments. Detailed description

[0056] In the following description of examples or embodiments of the present invention, reference is made to the accompanying drawings, in which they are shown with reference to illustrative examples or embodiments that can be implemented and in which the same reference numerals and reference symbols can be used to identify the same or similar components, even if they are shown in different accompanying drawings. Furthermore, in the following description of examples or embodiments of the present invention, detailed descriptions of known functions and components included herein are omitted where it is determined that such a description might make the subject matter rather unclear in some embodiments of the present invention.The terms used here, such as "comprise," "have," "exhibit," "form," "composed of," and "formed of," are generally intended to allow the addition of other components, unless the terms are used with the term "only." As used herein, singular forms are intended to include plural forms unless the context clearly indicates otherwise.

[0057] Terms such as "first", "second", "A", "B", "(A)" or "(B)" may be used herein to describe elements of the present invention. These terms are not used to define the nature, order, sequence or number of the elements, etc., but merely to distinguish the respective element from other elements.

[0058] When it is mentioned that a first element is "connected or coupled" to a second element, "contacts or overlaps" it, etc., this should be interpreted to mean that not only can the first element be "directly connected or coupled" to the second element, or "directly contact or overlap" it, but also that a third element can be "arranged" between the first and second elements, or that the first and second elements can be "connected or coupled" to each other via a fourth element, or "contact or overlap" each other via a fourth element, etc.: Here, the second element can be contained in at least one of two or more elements that are "connected or coupled" to each other, "contact or overlap" each other, etc.

[0059] When temporal relational terms such as "after", "subsequently", "next", "before" and the like are used to describe processes or operations of elements or configurations or sequences or steps in the operating, processing or manufacturing process, these terms may be used to describe non-consecutive or non-sequential processes or operations unless the term "immediately" or "as soon as" is used with them.

[0060] When dimensions, relative sizes, etc., are mentioned, it should also be considered that numerical values ​​for elements or features, or corresponding information (e.g., level, range, etc.), contain a tolerance or error range that can be caused by various factors (e.g., process factors, internal or external influences, noise, etc.), even if no relevant description is given. Furthermore, the term "possibly" fully encompasses all meanings of the term "may."

[0061] Fig. Figure 1 shows a display device 100 according to embodiments. Fig. 2A and Fig. Figure 2B shows a substrate 200 of the display device 100 according to embodiments. Fig. Figure 3 shows a touch sensor structure of the display device 100 according to embodiments. Fig. Figure 4 shows an equivalent circuit for each of the subpixels of the display device 100 according to embodiments. Fig. Figure 5 is a schematic cross-sectional view of the display device 100 according to embodiments.

[0062] With reference to Fig. 1. According to embodiments, the display device 100 can have a screen part on which an image is displayed and a frame part on the perimeter of the screen part on which no image is displayed.

[0063] The screen portion can be a part in which a display panel of the display device 100 is exposed and which is simultaneously an active area of ​​the display panel. The bezel portion can be a housing (or enclosure) of the display panel and simultaneously an inactive area of ​​the display panel.

[0064] The edging part can include a side edging part that is exposed at the sides and a front edging part that is exposed at the front.

[0065] In some cases, when viewing the display device 100 from the front, there may be no front bezel. That is, the display device 100 according to embodiments may not have a front bezel.

[0066] With reference to Fig. 1. According to embodiments 100, the display device does not have any physical buttons that are typically arranged in the side bezel. These physical buttons can be typical hardware buttons, such as a volume button (or volume buttons), a lock button (or an on / off button), and other function buttons that a user can press with physical force.

[0067] With reference to Fig. 1. According to embodiments, the display device 100 may not be provided with physical buttons, but may have a soft button (or soft buttons) to replace the physical buttons.

[0068] In this respect, the display device 100 according to embodiments can be described with reference to Fig. 1. The display device 100 has a touch sensor structure in the side bezel, the front bezel and / or a combination thereof to implement the soft key(s). The display device 100 can process user input by detecting a touch on the bezel using the touch sensor structure in the side bezel and / or the front bezel.

[0069] With reference to Fig. 1. A region of the side bezel and / or the front bezel of the display device 100 according to embodiments, in which touch detection is enabled by the touch sensor structure provided therein, is referred to as the side-edge touch detection region. That is, the region in which the soft key(s) are provided in the display device 100 according to embodiments is referred to as the side-edge touch detection region.

[0070] The display device 100 according to embodiments comprises, as components that provide a display function: a display plate in which several data lines and several gate lines intersect and several subpixels are connected to the several data lines and the several gate lines; a gate drive circuit that sequentially outputs gate signals to several gate lines; and a source drive circuit that outputs image data voltages VDATA to the several data lines.

[0071] The scoreboard can have an active area where images are displayed and an inactive area where no images are displayed. The multiple subpixels for displaying images are located in the active area of ​​the scoreboard. The scoreboard can have multiple signal lines, such as multiple data lines and multiple gate lines, to control the multiple subpixels.

[0072] In the display panel, the multiple data lines and the multiple gate lines can be arranged so that they intersect. For example, the multiple data lines can be arranged in rows or columns, while the multiple gate lines can be arranged in columns or rows. For the sake of brevity, the multiple data lines will be described as arranged in rows, while the multiple gate lines will be described as arranged in columns.

[0073] A controller controls the source control circuit and the gate control circuit by supplying the source control circuit and the gate control circuit with a variety of control signals (e.g., a data timing control signal and a gate timing control signal) that are required to control their operation.

[0074] The controller begins sampling at times defined by individual frames, converts image data input from an external source into a data signal format readable by the source drive circuitry, outputs the converted image data, and controls the data drive at appropriate times in response to the sampling. The controller can be a timing controller used in typical display technology, or a control device that includes a timing controller and is designed to perform other control functions. The controller can be provided as a separate component from the source drive circuitry or combined with the source drive circuitry to form an integrated circuit (IC).

[0075] The source drive circuit controls the multiple data lines by supplying the image data voltages to these lines in response to the image data input from the controller. The source drive circuit can comprise one or more integrated source drive circuits (S-DICs). Each S-DIC may include a shift register, a capture circuit, a digital-to-analog converter (DAC), an output buffer, and the like. In some cases, each S-DIC may also include an analog-to-digital converter (ADC).

[0076] Each S-DIC can be directly bonded to a bonding point on the scoreboard using a tape-automated bonding (TAB) structure or a chip-on-glass (COG) structure, mounted directly on the scoreboard, or, in some cases, provided as an integrated part of the scoreboard. Additionally, each S-DIC can be implemented using a chip-on-film (COF) structure mounted on a film that is connected to the scoreboard.

[0077] The gate drive circuit sequentially controls the multiple gate lines by sequentially supplying a sampling signal to each of them. In this context, the gate drive circuit can also be referred to as a "sampling drive circuit".

[0078] The gate control circuit may include a shift register, a level converter, and the like.

[0079] The gate driver circuit can be connected to a bonding point of the display panel using a TAB structure, a COG structure, or a chip-on-panel (COP) structure; it can be implemented using a gate-in-panel (GIP) structure mounted directly on the display panel; or, in some cases, it can be provided as an integrated part of the display panel. Additionally, the gate driver circuit can comprise multiple integrated gate driver circuits (G-DICs) implemented using a COF structure mounted on a gate circuit film that is bonded to the display panel.

[0080] Under the control of the controller, the gate drive circuit sequentially delivers the sampling signal with an on or off voltage to several gate lines.

[0081] The source control circuitry can be located on one side of the scoreboard (e.g., above or below, or on the upper or lower section of the scoreboard) or, in some cases, on both sides of the scoreboard (e.g., above and below, or on the upper and lower sections of the scoreboard), depending on the control method, the design of the scoreboard, or similar factors. The gate control circuitry can be located on one side of the scoreboard (e.g., to the right or left of the scoreboard, or on the right or left section thereof) or, in some cases, on both sides of the scoreboard (e.g., to the right and left of the scoreboard, or on the right and left sections thereof), depending on the control method, the design of the scoreboard, or similar factors.

[0082] The display device 100 according to embodiments can be a self-emitting display such as an organic light-emitting diode display (OLED display), a quantum dot display or a micro-light-emitting diode display (micro-LED display).

[0083] In a case where the display device 100 according to embodiments is an OLED display, each of the subpixels can have a self-emitting OLED as the emission diode (i.e., light-emitting element). In a case where the display device 100 according to embodiments is a quantum dot display, each of the subpixels can have an emission diode consisting of a self-emitting semiconductor crystal called a quantum dot. In a case where the display device 100 according to embodiments is a micro-LED display, each of the subpixels can have a self-emitting and inorganic micro-LED as the emission diode.

[0084] The display device 100 according to embodiments can be a liquid crystal display (LCD) or the like, which furthermore includes a lighting device (e.g. a backlight unit) in addition to the display panel.

[0085] The display device 100 according to embodiments can further provide a touch detection function in addition to the display function. In this case, the display device 100 can further comprise a touch sensor, which includes touch electrodes and a touch control circuit that controls the touch sensor in order to provide the touch detection function.

[0086] With reference to Fig. 2A and Fig. 2B, the display device 100 according to embodiments may comprise a bendable and / or flexible substrate 200 and a flexible printed circuit FPC connected to a circumferential section of the substrate 200.

[0087] With reference to Fig. 2A and Fig. In 2B, the substrate 200 can have an active area AA and a non-active area around the perimeter of the active area AA. The active area AA is an area in which several subpixels are provided for display control. The non-active area can have a first route area RA1 surrounding the active area AA, a second route area RA2 located outside the first route area RA1, and so on. Here, the substrate 200 can be curved; a portion of the substrate 200 corresponding to the active area AA can face forward, and a portion of the substrate 200 corresponding to the second route area RA2 (i.e., the lateral border portion) can face to the sides.

[0088] With reference to Fig. 2A and Fig. 2B A driver circuit area DCA, which has a source site section connected to a source driver circuit SDC, can be located in a circumferential section of the substrate 200. For example, the source driver circuit SDC can have a chip-on-board (COB) structure or a chip-on-board (COP) structure and can be connected to the source site section of the driver circuit area DCA.

[0089] With reference to Fig. 2A In a case where the display device 100 further comprises a touch control circuit TDC for detecting touches according to the elements, the touch control circuit TDC may be mounted on the flexible printed circuit FPC or on a printed circuit board (PCB) connected to the flexible printed circuit FPC.

[0090] With reference to Fig. In addition to the source section connected to the source control circuit SDC, a touch point section connected to the touch control circuit TDC can be arranged in the control circuit area DCA, which is located around the perimeter of the substrate 200. For example, the touch control circuit TDC, which has the COG structure or the COP structure, can be connected to the touch point section of the control circuit area DCA.

[0091] For example, it can be like in Fig. Figure 2B shows a single source section area arranged in the central section of the drive circuit area DCA of substrate 200, while two touch section areas can be arranged on either side of the single source section area. The source drive circuit SDC, connected to the single source section area, and the touch drive circuit TDC, connected to the two touch section areas, can be integrated into a single source readout integrated circuit (SRIC).

[0092] With reference to the Fig. 2A and Fig. 2B Display connection lines can be arranged in the first routing area RA1, the second routing area RA2, and / or a combination thereof. These display connection lines connect the display signal lines, such as the multiple data lines and the multiple gate lines that control the multiple subpixels arranged in the active area AA, to the source control circuit SDC and the flexible printed circuit FPC.

[0093] With reference to the Fig. 2A and Fig. 2B Touch electrodes for touch detection can be arranged in the active area AA. In this case, the touch leads connecting the multiple touch electrodes arranged in the active area AA and the touch control circuit TDC can be located in the first routing area RA1, the second routing area RA2, and / or a combination thereof. As described in Fig. As shown in Figure 2A, the touch control circuit TDC can be mounted on the flexible printed circuit board (FPC) or on a PCB connected to the FPC. Alternatively, the touch control circuit TDC can be mounted as shown in Figure 2A. Fig. 2B is shown, mounted on the DCA control circuit area.

[0094] With reference to the Fig. 2A and Fig. 2B, the substrate 200 can have a curved area BA between the control circuit area DCA and the active area AA. The curved area BA of the substrate 200 is bent such that the control circuit area DCA, the flexible printed circuit FPC, and the like are located on the back side of the substrate 200.

[0095] With reference to the Fig. 2A and Fig. 2B, the inactive area of ​​the substrate 200 can be bent such that the second route area RA2 is located on side surfaces of the display device 100. That is, the second route area RA2 of the substrate 200 can correspond to or overlap the lateral edging part of the display device 100.

[0096] Alternatively, with reference to the Fig. 2A and Fig. 2B The inactive area of ​​the substrate 200 is bent such that the first route area RA1 of the substrate 200 is located on the side surfaces of the display device 100. That is, the first route area RA1 of the substrate 200 can correspond to or overlap the lateral edging part of the display device 100.

[0097] Alternatively, with reference to the Fig. 2A and Fig. 2B, the non-active area of ​​the substrate 200 can be bent such that the first route area RA1 and the second route area RA2 are arranged on the side surfaces of the display device 100. That is, the first route area RA1 and the second route area RA2 can correspond to or overlap the lateral edging part of the display device 100.

[0098] In some cases, with reference to the Fig. 2A and Fig. 2B The non-active area of ​​the substrate 200 is bent such that the first routing area RA1 of the substrate 200 is arranged on the side surfaces of the display device 100, and the second routing area RA2 of the substrate 200 can be arranged on the rear surface of the display device 100. That is, the first routing area RA1 of the substrate 200 can correspond to the side edging part, while the second routing area RA2 of the substrate 200 can correspond to the rear surface of the display device 100.

[0099] With reference to the Fig. 2A and Fig. 2B is the touch sensor structure provided in the first routing area RA1 of substrate 200, the second routing area RA2 of substrate 200, and / or a combination thereof, to implement the soft key(s) that replace the physical keys. Various embodiments of the touch sensor structure provided in the first routing area RA1 of substrate 200, the second routing area RA2 of substrate 200, and / or a combination thereof are now described with reference to Fig. 6 to 23 are described in more detail.

[0100] With reference to Fig. 3. According to embodiments, the display device 100 may have the touch sensor structure that detects a touch of the active area AA, in addition to the touch sensor structure that implements the soft key(s).

[0101] With reference to Fig. 3 can comprise the touch sensor structure corresponding to the active area AA of the display device 100 according to embodiments, several touch electrodes TE arranged in an area corresponding to the active area AA, and several touch lines TL electrically connecting the several touch electrodes TE to the touch control circuit OT.

[0102] The display device 100 according to embodiments can perform self-capacitance touch detection or counter-capacitance touch detection.

[0103] For example, according to embodiments, the display device 100 can detect a touch based on the intrinsic capacitance between a touch object, such as a finger or a stylus (e.g., a stylus), and the touch electrodes TE. In this case, the touch control circuit TDC can detect a touch event or determine touch coordinates based on the intrinsic capacitance between the touch object and the touch electrodes TE by applying a touch control signal to multiple touch electrodes TE and sensing each of the multiple touch electrodes TE. (The term "detecting a touch event" used here refers to "determining whether a touch has occurred or not.")

[0104] In another example, the display device 100, according to embodiments, can detect a touch based on the counter-capacitance between the touch electrodes TE. In this case, the multiple touch electrodes TE are categorized as control touch electrodes and scanning touch electrodes. The touch control circuit TDC can apply the touch control signal to the control touch electrodes among the multiple touch electrodes TE and detect the scanning touch electrodes among the multiple touch electrodes TE, thereby detecting a touch event or determining touch coordinates based on the counter-capacitance between the control touch electrodes and the scanning touch electrodes. With the multiple touch electrodes TE, the control touch electrodes and the scanning touch electrodes can typically be arranged so that they intersect each other, as shown in Fig. 3 is shown.

[0105] With reference to Fig. 3. For example, with touch electrodes TEr arranged in rows and touch electrodes TEC arranged in columns, the touch electrodes TEr can be the control touch electrodes, while the touch electrodes TEC can be the scanning touch electrodes. In another example, the touch electrodes TEr can be the scanning touch electrodes, while the touch electrodes TEC can be the control touch electrodes.

[0106] The shape of the multiple touch electrodes TE, their design and the like can be designed differently depending on the type of touch detection (e.g. touch detection with self-capacitance or touch detection with counter-capacitance).

[0107] For example, in self-capacitance touch sensing, the multiple touch electrodes TE can be in the form of non-overlapping blocks. In counter-capacitance touch sensing, the multiple touch electrodes TE can be in the form of intersecting bars. Alternatively, each of the multiple touch electrodes TE can be designed such that two or more subdivided sections of it are electrically connected. In this case, the multiple touch electrodes TE can each be in the form of a rhombus (or diamond), a square, or the like.

[0108] With reference to Fig. 3. According to embodiments, the display device 100 may have a touch detection circuit comprising the touch control circuit TDC and a touch controller TCTR.

[0109] The touch control circuit TDC can detect the touch electrodes TE, generate detection data including detection values, and output the detection data to the touch controller TCTR. Using the detection data, the touch controller TCTR can detect a touch event or determine touch coordinates.

[0110] The TCTR touch controller can be implemented as an application processor (AP) or similar.

[0111] The touch control circuit TDC and the touch controller TCTR can be implemented as separate components or integrated together to form a single component.

[0112] With reference to Fig. 4 briefly describes the structure of each of the subpixels of the display device 100.

[0113] With reference to Fig. 4 Each of the subpixels of the display device 100 can include an emission diode ED, a drive transistor DRT that drives the emission diode ED, a sampling transistor SCT that is driven ON / OFF by a sampling signal SCAN supplied via a sampling line SCL (where the sampling signal SCAN is a type of gate signal GATE, while the sampling line SCL is a type of gate line GL) to control an electrical connection between a first node n1 of the drive transistor DRT and a data line DL, and a storage capacitor Cst that is electrically connected between the first node n1 and a second node n2 of the drive transistor DRT, and the like.

[0114] The in Fig. The subpixel structure shown in Figure 4 is a basic 2T1C structure, i.e., a structure consisting of two transistors (2T) and one capacitor (1C). In some cases, each subpixel may further contain one or more transistors, one or more capacitors, or one or more transistors and capacitors.

[0115] The emission diode ED comprises a pixel electrode PE, a common electrode CE, and an emission layer EL located between the pixel electrode PE and the common electrode CE. The pixel electrode PE of the emission diode ED can be either an anode or a cathode, while the common electrode CE can also be either a cathode or an anode. Examples of emission diodes that can be used include organic light-emitting diodes (OLEDs), light-emitting diodes (LEDs), and quantum dot light-emitting diodes (QDLEDs).

[0116] A base voltage EVSS can be applied to the common electrode CE of the emission diode ED. The base voltage EVSS can be, for example, a ground voltage or a voltage similar to ground.

[0117] The control transistor DRT is a transistor that controls the emission diode ED and has the first node n1, the second node n2 and a third node n3.

[0118] The first node n1 of the driver transistor DRT can be a gate node and be electrically connected to a source or drain node of the sampling transistor SCT. The second node n2 of the driver transistor DRT can be electrically connected to the pixel electrode PE of the emission diode ED and be a source or drain node. The third node n3 of the driver transistor DRT can be a node to which a drive voltage EVDD is applied, be electrically connected to a drive voltage line DVL across which the drive voltage EVDD is applied, and be a drain or source node.

[0119] The sampling transistor SCT can control the connection between the first node n1 of the drive transistor DRT and a corresponding data line DL among several data lines DL in response to the sampling signal SCAN, which is supplied via a corresponding sampling line SCL, i.e. a type of gate line GL, among the several sampling lines SCL.

[0120] The drain or source node of the sampling transistor SCT can be electrically connected to the corresponding data line DL. The source or drain node of the sampling transistor SCT can be electrically connected to the first node n1 of the drive transistor DRT. The gate node of the sampling transistor SCT can be electrically connected to the sampling line SCL, i.e., a type of gate line GL, to apply the sampling signal SCAN.

[0121] The sampling transistor SCT can be switched on by the sampling signal SCAN with a turn-on level voltage in order to transmit an image data voltage Vdata, supplied via the corresponding data line DL, to the first node n1 of the drive transistor DRT.

[0122] The sampling transistor SCT is turned on by the sampling signal SCAN with a turn-on gate voltage and turned off by the sampling signal SCAN with a turn-off gate voltage. If the sampling transistor SCT is an N-type transistor, the turn-on gate voltage can be a high level, while the turn-off gate voltage can be a low level. If the sampling transistor SCT is a P-type transistor, the turn-on gate voltage can be a low level, while the turn-off gate voltage can be a high level.

[0123] The storage capacitor Cst can be electrically connected to the first node n1 and the second node n2 of the drive transistor DRT and maintain the image data voltage Vdata, which is an image signal voltage or a voltage corresponding to the image data voltage Vdata, for a single frame time.

[0124] The storage capacitor Cst can be an external capacitor that is intentionally placed outside the drive transistor DRT, instead of a parasitic capacitor (e.g. Cgs or Cgd), i.e., an internal capacitor that is present between the first node n1 and the second node n2 of the drive transistor DRT.

[0125] The driver transistor DRT and the sampler transistor SCT can each be an N-type or a P-type transistor. Both the driver transistor DRT and the sampler transistor SCT can be N-type or P-type transistors. One of the driver transistor DRT and the sampler transistor SCT can be an N-type (or a P-type) transistor, while the other of the driver transistor DRT and the sampler transistor SCT can be a P-type (or an N-type) transistor. The structure of each of the in Fig. The four subpixels shown are only an example for illustrative purposes. The subpixel structure can further comprise one or more transistors, or in some cases, one or more capacitors. Alternatively, all of the subpixels can have the same structure, or some of the subpixels can have a different structure.

[0126] With reference to the Fig. 1, Fig. 2A, Fig. 2B and Fig. 5. According to embodiments, the display device 100 may comprise the substrate 200, which has the active area AA, on which images are displayed, and the inactive area NA, on which no images are displayed, a transistor array layer 520 arranged over the substrate 200 and in which several transistors (e.g., DRT and SCT) are provided, an insulating layer 530 arranged over the transistor array layer 520 in which several transistors are provided, an emission diode layer 540 arranged over the insulating layer 530 in which the emission diode ED is provided, and an encapsulation layer 550 provided over the emission diode layer 540.

[0127] The emission diode layer 540 can comprise the multiple pixel electrodes PE, the multiple emission layers EL arranged over the multiple pixel electrodes PE, the common electrode CE arranged over the multiple emission layers EL, and the like.

[0128] The encapsulation layer 550 can be arranged above the common electrode CE of the emission diode layer 540 and simultaneously located between the active region AA and the first routing region RA1. The encapsulation layer 550 can have an inclined surface in the first routing region RA1.

[0129] The display device 100 according to embodiments can further comprise one or more dams arranged at the boundary between the first route area RA1 and the second route area RA2. The heights of the dams can be higher than those of the surrounding area.

[0130] With reference to the Fig. 1, Fig. 2A, Fig. 2B and Fig. 5 The display device 100 can, according to the embodiments, have side-edge contact electrodes STE arranged in the first route area RA1, the second route area RA2 and / or a combination thereof to implement the soft key(s). According to the example of Fig. 5. The side-edge contact electrodes STE can be arranged in the second route area RA2. The display device 100 according to embodiments can further comprise side-edge contact lines that are arranged in the first route area RA1, the second route area RA2 and / or a combination thereof and are electrically connected to the side-edge contact electrodes STE.

[0131] Referring to the example of Fig. 5. In the first route area RA1, a base voltage electrode 560, via which the base voltage EVSS is supplied, and a power pattern 570, which is electrically connected to the base voltage electrode 560, can be arranged on the substrate.

[0132] With reference to Fig. 5. A device structure 510 can be arranged on the rear surface of the substrate 200 such that the substrate 200 is bent along the device structure 510. Accordingly, the side-edge contact electrodes STE can be arranged on a side surface of the display device 100, thereby providing the soft key(s) in the side frame part.

[0133] The encapsulation layer 550 can be a single layer or, as it is described in Fig. Figure 5 shows that the encapsulation layer consists of several layers 551, 552, and 553. For example, the encapsulation layer 550 can have a multilayer configuration in which a first inorganic encapsulation layer 551, an organic encapsulation layer 552, a second inorganic encapsulation layer 553, and the like are stacked on top of each other.

[0134] The display device 100 according to embodiments can, for example, be a mobile device such as a smartphone or a tablet computer, a computing device such as a notebook computer having a display panel, or another electronic device such as a television, a kiosk or an information display device having a display panel.

[0135] The following are embodiments of a planar structure of the touch sensor structure, which implements the soft key(s) in the side-edge touch detection area according to the embodiments, with reference to Fig. 6 to 10 and embodiments of a cross-sectional structure of the touch sensor structure, which implements the soft key(s) in the side-edge touch detection area according to embodiments, are described with reference to Fig. Described in sections 11 to 22.

[0136] Fig. Figures 6 to 10 show examples of the side-edge touch electrodes STE in the display device 100 according to embodiments. In these examples, the touch control circuit TDC is described as being mounted on the flexible printed circuit board (FPC) or on a printed circuit board (PCB) connected to the flexible printed circuit board (FPC), as described in Fig. 2A is shown.

[0137] With reference to Fig. 6 to 8 One or more side-edge contact electrodes STE can be arranged in the second route region RA2, which is formed from the first route region RA1 and the second route region RA2 and is contained in the inactive region NA of the substrate 200. One or more side-edge contact lines STL, which are electrically connected to the one or more side-edge contact electrodes STE, can be arranged in the second route region RA2, which is formed from the first route region RA1 and the second route region RA2.

[0138] As it is in Fig. As shown in Figure 6, some of the multiple side-edge touch electrodes STE can be arranged in the second routing area RA2, which is on one side of the active area AA, while the other multiple side-edge touch electrodes STE can be arranged in the second routing area RA2, which is on the other side of the active area AA. Alternatively, as shown in Fig. 7 and Fig. As shown in Figure 8, all of the one or more side-edge contact electrodes STE are arranged in the second routing area RA2, which is located on one side of the active area AA.

[0139] With reference to Fig. In an example, the touch detection circuit (6 to 8) can receive detection values ​​via the side-edge touch electrodes (STE) and, based on these values, determine whether a user has touched the edging section containing the respective side-edge touch electrodes (STE). The detection values ​​can be values ​​corresponding to, or variations of, the intrinsic capacitance formed between the side-edge touch electrodes (STE) and an object such as a finger.

[0140] With reference to Fig. 8. The one or more side-edge touch electrodes STE and the one or more side-edge touch lines STL can be arranged completely independently of the touch sensor structure located in the active area AA. The touch control circuit TDC can control and detect the side-edge touch electrodes STE, which are located in the inactive area NA, independently of the control and detection operations of the touch electrodes TEr and TEC, which are located in the active area AA.

[0141] With reference to Fig. 9. One or more side-edge contact electrodes STE can be arranged in the first route area RA1 and one or more side-edge contact electrodes STE can be arranged in the second route area RA2.

[0142] With reference to Fig. 9. One or more side edge contact lines STL can be arranged in the first route area RA1 and one or more side edge contact lines STL can be arranged in the second route area RA2.

[0143] With reference to Fig. 9 at least one touch electrode TEr can extend from the active area AA to the first and second route areas RA1 and RA2, in which the side edge touch electrodes STE are located, under the touch electrodes TE (TEr and TEC) that are arranged in the active area AA.

[0144] The at least one touch electrode TEr, which extends to the first and second route areas RA1 and RA2, can cut the side edge touch electrodes STE, which are arranged in the first and second route areas RA1 and RA2.

[0145] A counter-capacitance can be formed between the at least one contact electrode TEr, which extends to the first and second route regions RA1 and RA2, and the side-edge contact electrodes STE, which are arranged in the first and second route regions RA1 and RA2.

[0146] With regard to countercapacitance touch detection, the at least one touch electrode TEr, which extends to the first and second route areas RA1 and RA2, serves as the control touch electrode, while the side edge touch electrodes STE, which are arranged in the first and second route areas RA1 and RA2, can serve as the scanning touch electrode.

[0147] The touch detection circuit can obtain detection values ​​by sensing the side-edge touch electrodes STE located in the first and second route regions RA1 and RA2, and, based on these values, determine whether the user has touched the edging portion containing one or more side-edge touch electrodes STE. The detection values ​​can correspond to, or variations thereof, the counter-capacitance formed between the at least one touch electrode TEr extending to the first and second route regions RA1 and RA2 and the side-edge touch electrodes STE located in these regions.

[0148] With reference to Fig. 10. One or more contact electrodes TEr can be arranged beneath the contact electrodes TE (TEr and TEC) located in the active area AA, such that they extend from the active area AA to the first routing area RA1. Alternatively, one or more contact electrodes TEr can extend beneath the contact electrodes TE (TEr and TEC) located in the active area AA beyond the first routing area RA1 to the second routing area RA2 in the inactive area NA.

[0149] The one or more touch electrodes TEr extending to the first and second route areas RA1 and RA2 can be the one or more side-edge touch electrodes STE that implement the soft key(s). Thus, one or more touch lines TL electrically connected to the one or more touch electrodes TEr extending to the first and second route areas RA1 and RA2 can serve as one or more side-edge touch lines STL.

[0150] The one or more side-edge touch electrodes STE corresponding to the one or more touch electrodes TEr extending to the first and second route areas RA1 and RA2 can intersect the other touch electrodes TEC below the touch electrodes TE (TEr and TEC) located in the active area AA.

[0151] Accordingly, the one or more side-edge contact electrodes STE corresponding to the one or more contact electrodes TEr extending to the first and second route regions RA1 and RA2 can form a counter-capacitance with other contact electrodes TEC below the contact electrodes TE (TEr and TEC) located in the active region AA.

[0152] With regard to countercapacitance touch detection, the one or more side-edge touch electrodes STE corresponding to the one or more touch electrodes TEr extending to the first and second route areas RA1 and RA2 serve as scanning touch electrodes, while the other touch electrodes TEC in the active area AA intersecting the one or more side-edge touch electrodes STE serve as scanning touch electrodes.

[0153] The touch detection circuit can obtain detection values ​​by sensing the one or more side-edge touch electrodes STE corresponding to the one or more touch electrodes TEr extending to the first and second route areas RA1 and RA2, and, based on these detection values, determine whether the user has touched the edging portion containing one or more side-edge touch electrodes STE. The detection values ​​can be the counter-capacitance formed between the one or more side-edge touch electrodes STE corresponding to the one or more touch electrodes TEr extending to the first and second route areas RA1 and RA2 and the other touch electrodes TEc located beneath the touch electrodes TEr and TEc in the active area AA, or variations thereof.

[0154] The touch detection circuit can compare and analyze the detection values ​​of the touch electrodes TEr that do not extend to the first and second route areas RA1 and RA2, and the detection values ​​of the one or more touch electrodes TEr that do extend to the first and second route areas RA1 and RA2, thereby accurately determining whether the user has touched a section of one or more touch electrodes TEr that extend to the first and second route areas RA1 and RA2 located in the active area AA, or a section of one or more touch electrodes TEr that extend to the first and second route areas RA1 and RA2 located in the first or second route area RA1 or RA2 of the inactive area NA.

[0155] The cross-sectional structures of the A-A' section of the planar structures are described below. Fig. 6 and Fig. 7 with reference to Fig. Described in sections 11 to 18. The cross-sectional structure of the B-B' section of the planar structure of Fig. 8 is referred to Fig. 19 described. The cross-sectional structure of the C-C' section of the planar structure of Fig. 9 is referred to Fig. 20 described. The cross-sectional structure of the D-D' section of the planar structure of Fig. 10 is referred to Fig. 20 described.

[0156] Fig. Figures 11 to 18 are a variety of cross-sectional views along line AA' in the plan views of Fig. 6 and Fig. 7.

[0157] First, a common cross-sectional structure of the active areas AA is identified among those in Fig. The display devices shown in sections 11 to 18 are described in detail below. Fig. Figures 11 to 18 show the control transistor DRT.

[0158] Substrate 200 of the display panel comprises the active area AA, where images are displayed, and the inactive area NA, where no images are displayed. The inactive area NA comprises the first route area RA1 and the second route area RA2.

[0159] Substrate 200 can be a flexible substrate.

[0160] A multiple buffer layer 1110 and an active buffer layer 1120 can be arranged over the substrate 200.

[0161] In the active region AA, the transistor assembly layer 520 can be arranged above the substrate 200. Several DRT transistors located in the active region AA are provided in the transistor assembly layer 520.

[0162] To form the transistor arrangement layer 520, an active layer ACT of each of the transistors DRT can be provided and a gate insulating film 1130 can be provided over the active layer ACT.

[0163] A gate electrode GE is provided above the gate insulating film 1130, and a second insulating layer 1140 is provided above the gate electrode GE. A metal layer TM can be provided above the second insulating layer 1140, and a first insulating layer 1150 can be provided above the metal layer TM.

[0164] A source electrode (SE) and a drain electrode (DE) can be provided above the first insulating layer 1150. The source electrode (SE) and the drain electrode (DE) can be connected to the active layer (ACT) via a triple contact hole in the first insulating layer 1150, the second insulating layer 1140, and the gate insulating film 1130.

[0165] The sections of the active layer ACT to which the source electrode SE and the drain electrode DE are connected can be conductive sections, while the remaining section can overlap the gate electrode GE to form a channel.

[0166] The transistor arrangement layer 520, which has the multiple transistors DRT, can extend to this point and a device insulating layer 1160 can be provided above the transistor arrangement layer 520.

[0167] The device insulating layer 1160 can be arranged above the first insulating layer 1150 and simultaneously cover the source electrode SE and the drain electrode DE, which are provided above the first insulating layer 1150.

[0168] The device insulating layer 1160 can correspond to the insulating layer 530, which is in Fig. As shown in Figure 5, the transistor arrangement layer 520 is located below the device insulating layer 1160 and the emission diode layer 540 is located above the device insulating layer 1160 and can have a planarization function.

[0169] In the emission diode layer 540, the multiple pixel electrodes PE can be located above the device insulating layer 1160, and each of the pixel electrodes PE can be connected to the source electrode SE or the drain electrode DE via a contact hole in the device insulating layer 1160. The multiple emission layers EL are arranged above the multiple pixel electrodes PE. The common electrode CE is arranged above the multiple emission layers EL.

[0170] A bank of 1170 can cover a section of the pixel electrode PE. The emission area of ​​each subpixel can be defined by the bank of 1170. The emission layer EL can be positioned over a section of the pixel electrode PE that is not covered by the bank of 1170.

[0171] The encapsulation layer 550 can be located above the common electrode CE. The encapsulation layer 550, located above the common electrode CE, can be located in the active area AA and the first route area RA1 and may have an inclined surface 1100 in the first route area RA1.

[0172] The display panel may contain one or more dams DAM1 and DAM2, which can prevent the encapsulation layer 550, in particular the organic encapsulation layer 552, from collapsing, over circumferential sections of the encapsulation layer 550 or the surroundings of the circumferential sections.

[0173] The heights of one or more dams DAM1 and DAM2 can be higher than those of the surrounding area.

[0174] The one or more dams DAM1 and DAM2 can be located on the boundary between the first route area RA1 and the second route area RA2. This means that in the inactive area NA, the first route area RA1 and the second route area RA2 can be divided by the one or more dams DAM1 and DAM2.

[0175] As it is in the Fig. As shown in Figures 11 to 18, the side-edge contact electrodes STE can be arranged in the first route area RA1, the second route area RA2, and / or a combination thereof. The side-edge contact lines STL, which are electrically connected to the side-edge contact electrodes STE, can be arranged in the first route area RA1, the second route area RA2, and / or a combination thereof.

[0176] The cross-sectional structure of the second route area RA2, in which the side-edge contact electrodes STE are located, is described with reference to Fig. Described in sections 11 to 18. The first insulating layer 1150 can be arranged beneath the side-edge contact electrodes STE. The metal layer TM can be arranged beneath the first insulating layer 1150. The second insulating layer 1140 can be arranged beneath the metal layer TM. A gate electrode material layer GML can be arranged beneath the second insulating layer 1140. The gate electrode material layer GML can contain the same gate electrode material as the gate electrodes GE of the multiple transistors DRT.

[0177] With reference to Fig. 11 to 13, the side edge contact electrodes STE can contain the same source / drain electrode material as the source electrode SE and the drain electrode DE of the multiple transistors DRT.

[0178] With reference to Fig. 11. The side-edge touch electrodes STE can be electrically connected to the metal layer TM via a contact hole CNT_A in the first insulating layer 1150. The metal layer TM can be intended to increase the effective electrode area of ​​the side-edge touch electrodes STE, thereby increasing the capacitance, or to be the side-edge touch lines STL through which signals are transmitted. The effective electrode area can mean a substantial total area (i.e., an area with respect to the signal application) that includes the electrode area of ​​an electrode pattern to which the same signal is further applied, even if the electrode pattern is made of a different material than that of the side-edge touch electrodes STE and the electrode area of ​​the side-edge touch electrodes TE.

[0179] Additionally, the metal layer TM in the active area AA can serve as one of two electrodes of the storage capacitor Cst in the Fig. The 4 subpixel structures shown serve as a guide. With reference to Fig. 11. The metal layer TM in the active region AA can, for example, overlap the gate electrode GE of the drive transistor DRT or the gate electrode material layer GML, which is electrically connected to the gate electrode GE, with the second insulating layer 1140 provided in between, thereby forming the storage capacitor Cst. The gate electrode material layer GML and the metal layer TM can correspond to the two electrodes of the storage capacitor Cst.

[0180] In addition, the metal layer TM in the active area AA can be used as indicator lead metals, such as the multitude of gate leads GL, or indicator electrode metals.

[0181] With reference to Fig. 12. The metal layer TM can be electrically connected to the side-edge contact electrodes STE via the contact hole CNT_A in the first insulating layer 1150 and simultaneously electrically connected to the gate electrode material layer GML via a contact hole CNT_B in the second insulating layer 1140. The metal layer TM, the gate electrode material layer GML, or both the metal layer TM and the gate electrode material layer GML can be intended to increase the effective electrode area of ​​the side-edge contact electrodes STE, thereby increasing the capacitance, or to be the side-edge contact lines STL through which signals are transmitted.

[0182] With reference to Fig. 13. The side-edge contact electrodes STE can be electrically connected to the gate electrode material layer GML via a double contact hole CNT_AB in the first insulating layer 1150 and the second insulating layer 1140. The gate electrode material layer GML can be intended to increase the effective electrode area of ​​the side-edge contact electrodes STE, thereby increasing the capacitance, or to be the side-edge contact lines STL through which signals are transmitted.

[0183] With reference to the Fig. 14 to 18, the side-edge contact electrodes STE can contain the same pixel electrode material as the multiple pixel electrodes PE.

[0184] With reference to Fig. 14 and Fig. In the active region AA, a source / drain electrode material layer, in which the source electrode SE and the drain electrode DE are arranged, is located above the first insulating layer 1150. In the non-active region NA, on the other hand, the pixel electrode material layer, which provides the side-edge contact electrodes STE, can be arranged above the first insulating layer 1150.

[0185] With reference to Fig. 14. The side-edge contact electrodes STE can be electrically connected to the metal layer TM via the contact hole CNT_A in the first insulating layer 1150. The metal layer TM can be electrically connected to the gate electrode material layer GML via the contact hole CNT_B in the second insulating layer 1140. The metal layer TM, the gate electrode material layer GML, or both the metal layer TM and the gate electrode material layer GML can be intended to increase the effective electrode area of ​​the side-edge contact electrodes STE, thereby increasing the capacitance, or to be the side-edge contact lines STL.

[0186] With reference to Fig. 15. The side-edge contact electrodes STE can be electrically connected to the gate electrode material layer GML via the double contact hole CNT_AB in the first insulating layer 1150 and the second insulating layer 1140. The gate electrode material layer GML can be intended to increase the effective electrode area of ​​the side-edge contact electrodes STE, thereby increasing the capacitance, or to be the side-edge contact lines STL through which signals are transmitted.

[0187] With reference to the Fig. A source / drain electrode material layer (SDL) can be arranged above the first insulating layer (1150) at points 16 to 18. A circumferential insulating layer (1600) can be provided above the source / drain electrode material layer (SDL), which is located in the inactive region (NA). The circumferential insulating layer (1600) can contain the same material as the device insulating layer (1160).

[0188] The side-edge contact electrodes STE, which contain the pixel electrode material, can be arranged above the circumferential insulating layer 1600. That is, the circumferential insulating layer 1600 can be arranged below the side-edge contact electrodes STE, which contain the pixel electrode material.

[0189] The source / drain electrode material layer SDL can contain the same source / drain electrode material as the source electrode SE and the drain electrode DE of the multiple transistors DRT.

[0190] With reference to Fig. 16. The side-edge touch electrodes STE, which contain the pixel electrode material, can be electrically connected to the source / drain electrode material layer SDL via a contact hole CNT_C in the circumferential insulating layer 1600. The source / drain electrode material layer SDL can be intended to increase the effective electrode area of ​​the side-edge touch electrodes STE, thereby increasing the capacitance, or to be the side-edge touch lines STL through which signals are transmitted.

[0191] With reference to Fig. 17. The side-edge contact electrodes STE, which contain the pixel electrode material, can be electrically connected to the source / drain electrode material layer SDL via the contact hole CNT_C in the circumferential insulating layer 1600. Furthermore, the source / drain electrode material layer SDL can be electrically connected to the side-edge contact electrodes STE via the contact hole CNT_C in the circumferential insulating layer 1600 and to the gate electrode material layer GML via a double contact hole CNT_AB in the first insulating layer 1150 and the second insulating layer 1140.Here, the source / drain electrode material layer (SDL), the gate electrode material layer (GML), or both the source / drain electrode material layer (SDL) and the gate electrode material layer (GML) can be intended to increase the effective electrode area of ​​the side edge contact electrodes (STE), thereby increasing the capacitance, or to be the side edge contact lines (STL) through which signals are transmitted.

[0192] With reference to Fig. 18. The side-edge touch electrodes STE, which contain the pixel electrode material, can be electrically connected to the gate electrode material layer GML via a triple contact hole CNT_ABC in the circumferential insulating layer 1600, the first insulating layer 1150, and the second insulating layer 1140. The gate electrode material layer GML can be intended to increase the effective electrode area of ​​the side-edge touch electrodes STE, thereby increasing the capacitance, or to be the side-edge touch lines STL through which signals are transmitted.

[0193] As a modified structure of Fig. 16. The side-edge contact electrodes STE can be connected to the source / drain electrode material layer SDL via the contact hole CNT_C in the circumferential insulating layer 1600, while the source / drain electrode material layer SDL can be connected to the metal layer TM via the contact hole CNT_A in the first insulating layer 1150. Additionally, the metal layer TM can be electrically connected to the gate electrode material layer GML via the contact hole CNT_B in the second insulating layer 1140. Here, the source / drain electrode material layer SDL, the metal layer TM, the gate electrode material layer GML, and / or combinations thereof can serve to increase the effective electrode area of ​​the side-edge contact electrodes STE, thereby increasing the capacitance, or to form the side-edge contact lines STL through which signals are transmitted.

[0194] As a modified structure of Fig. The side-edge contact electrodes STE (16 to 18) can be electrically connected to the metal layer TM via a double contact hole in the circumferential insulating layer 1600 and the first insulating layer 1150. Here, the metal layer TM can serve to increase the effective electrode area of ​​the side-edge contact electrodes STE, thereby increasing the capacitance, or it can be the side-edge contact lines STL through which signals are transmitted.

[0195] The following describes the touch sensor structure that provides the soft key(s) implemented in the first route area RA1 of the inactive area NA, the second route area RA2 of the inactive area NA, and / or a combination thereof, and additionally the touch sensor structure provided in the active area AA, with reference to the Fig. described in sections 19 to 22. The touch electrodes TE can also be referred to as touch sensors.

[0196] Fig. Figure 19 is a cross-sectional view along line BB' in the plan view of Fig. 8, Fig. 20 is a cross-sectional view along line CC' in the plan view of Fig. 9 and Fig. 21 and Fig. Figure 22 shows cross-sectional views along line DD' in the plan view of Fig. 10.

[0197] First, the touch sensor structure in the active area AA is described with reference to Fig. 19 to 22 together with Fig. 3 described.

[0198] With reference to Fig. 19 to 22 together with Fig. 3 The display device 100 can comprise the multiple touch sensors arranged above the encapsulation layer 550 in the active area AA and the multiple touch lines TL connecting the multiple touch sensors to the touch point section located in the inactive area NA.

[0199] The encapsulation layer 550 can be provided as a single layer or can comprise the first inorganic encapsulation layer 551, the organic encapsulation layer 552, the second organic encapsulation layer 553 and the like.

[0200] The touch sensors can include the touch electrodes TEr and TEC, and furthermore bridges BP that connect two adjacent touch electrodes (e.g., TEr).

[0201] The contact electrodes TEr and TEC and the bridges BP can be arranged in different layers, with a sensor insulating layer 1820 placed in between.

[0202] Furthermore, a touch buffer layer 1810 may be provided, which is arranged above the encapsulation layer 550. In this case, the touch sensors and the touch lines TL may be located above the touch buffer layer 1810. In some cases, the touch buffer layer 1810 may not be provided, and the touch sensors and the touch lines TL may be arranged directly above the encapsulation layer 550.

[0203] The touch lines TL can be connected to or extend from the touch sensors located in the active area AA, extend downwards along the inclined surface 1100 of the encapsulation layer 550, extend over the one or more dams DAM1 and DAM2 and be connected to the touch point section.

[0204] With reference to Fig. 19 to 22, the side-edge contact electrodes STE can contain the same metals (i.e., contact sensor metals) as the contact sensors. The contact sensor metals can include contact electrode metals contained in the contact electrodes TEr and TEC, and bridge metals contained in the bridges BP. The contact electrode metals can be identical to or different from the bridge metals.

[0205] With reference to Fig. 19 to 21, the side-edge contact electrodes STE can contain the same contact electrode metals as the contact electrodes TE. With reference to Fig. 22. The side-edge contact electrodes STE can contain the same bridge metals as the bridges BP.

[0206] With reference to Fig. 19 together with Fig. 8 The side-edge contact electrodes STE can contain the contact electrode metals and be arranged in the second route area RA2.

[0207] With reference to Fig. 20 together with Fig. 9. Each of the first touch sensors TEr and BP among the multiple touch sensors TEr, TEC, and BP includes a touch sensor section that extends to the first route area RA1 of the inactive area NA. The side-edge touch electrodes STE can include the first side-edge touch electrode STE located in the first route area RA1. The first side-edge touch electrode STE can intersect the touch sensor section of the first touch sensors TEr and BP that extends to the first route area RA1.

[0208] With reference to Fig. 20 together with Fig. 9 is the touch sensor section (i.e., a section of the touch electrode TEr) of the first touch sensor TEr and BP, which extends to the first route area RA1, is divided into segments by the first side edge touch electrode STE, which is in the same layer, and the segments of the touch sensor section are connected by the bridge BP.

[0209] In other words, the first side-edge touch electrode STE and the touch sensor section (i.e., the section of the touch electrode TEr) extending from the first touch sensor TEr to the first route area RA1 can be located in the same layer.

[0210] The touch sensor section (i.e., the section of touch electrode TEr) extending from the first touch sensor TEr to the first route region RA1 can include a first touch electrode segment that is closer to the active region AA than the first side-edge touch electrode STE, and a second touch electrode segment that is farther from the active region AA than the first side-edge touch electrode STE. The touch sensor section can further include the bridge BP, which connects the first touch electrode segment (i.e., a first section of touch electrode TEr) and the second touch electrode section (i.e., a second section of touch electrode TEr).

[0211] With reference to Fig. 20 together with Fig. 9. The first touch sensor TEr and BP, among the multiple touch sensors TEr, TEC, and BP, can further comprise a touch sensor section that extends beyond the first route area RA1 to the second route area RA2 of the inactive area NA. The side-edge touch electrodes STE can include the second side-edge touch electrode STE, which is located in the second route area RA2. The second side-edge touch electrode STE can intersect the section of the first touch sensor TEr that extends to the second route area RA2.

[0212] With reference to Fig. 20 together with Fig. 9 is the touch sensor section (i.e., the section of the touch electrode TEr) of the first touch sensor TEr and BP, which extends to the second route area RA2, is divided into segments by the second side edge touch electrode STE located in the same layer, and the segments of the touch sensor section are connected by the bridge BP.

[0213] The touch sensor section extending from the first touch sensor TEr to the first route area RA1 can extend further to the second route area RA2. In this case, the second side-edge touch electrode STE, which is further included below the side-edge touch electrodes STE, can intersect the touch sensor section extending to the second route area RA2.

[0214] The soft key(s) that are represented by the in Fig. The cross-sectional structure shown in 20 can be realized, and the one in Fig. The 9 depicted planar structures can operate using counter-capacitance contact detection.

[0215] The touch detection circuit can apply a touch control signal to the touch sensor section extending to the first route area RA1 by supplying the touch control signal with a variable voltage level to the first touch sensor TEr, and detect a touch by detecting a change in capacitance in the side edge touch electrode STE through the side edge touch line STL.

[0216] With reference to Fig. 21 and Fig. 22 together with Fig. 10. The first touch sensor among the multiple touch sensors can have a touch sensor section that extends to the first route area RA1 of the inactive area NA. The touch sensor section of the first touch sensor that extends to the first route area RA1 can correspond to the first side-edge touch electrode STE. The touch sensor section of the first touch sensor that extends to the first route area RA1 can be the touch electrode section as described in Fig. 21, or the bridge section as shown in Fig. 22 is shown.

[0217] With reference to Fig. 21 The side edge touch electrode STE, corresponding to the touch sensor section of the first touch sensor TEr, extending to the first route area RA1, may contain the same touch electrode metal as the touch electrode TE.

[0218] With reference to Fig. 22 The side edge touch electrode STE, corresponding to the touch sensor section of the first touch sensor TEr, which extends to the first route area RA1, can contain the same bridge metal as the bridge BP.

[0219] With reference to Fig. In the second routing region RA2, the sensor insulating layer 1820 and the contact buffer layer 1810 can be arranged beneath the side-edge contact electrodes STE. The first insulating layer 1150 can be arranged beneath the sensor insulating layer 1820 and the contact buffer layer 1810, and the metal layer TM can be arranged beneath the first insulating layer 1150. The second insulating layer 1140 can be arranged beneath the metal layer TM, and the gate electrode material layer GML can be arranged beneath the second insulating layer 1140. The sensor insulating layer 1820 and / or the contact buffer layer 1810 can be omitted in the second routing region RA2.

[0220] With renewed reference to Fig. 19 The side-edge touch electrode STE can be electrically connected to the metal layer TM via a triple contact hole in the sensor insulating layer 1820, the touch buffer layer 1810, and the first insulating layer 1150. The metal layer TM can be intended to increase the effective electrode area of ​​the side-edge touch electrode STE, thereby increasing the capacitance, or to be the side-edge touch line STL, through which signals are transmitted to and from the touch control circuit TDC.

[0221] With reference to Fig. 19. The metal layer TM can be electrically connected to the gate electrode material layer GML via a contact hole in the second insulating layer 1140 located below it. In this case, the gate electrode material layer GML can also be intended to increase the effective electrode area of ​​the side-edge touch electrode STE, thereby increasing the capacitance, or to be the side-edge touch line STL through which signals are transmitted to and from the touch control circuit OT. Alternatively, the side-edge touch electrode STE can be in direct contact with the gate electrode material layer GML instead of being connected to the metal layer TM.

[0222] The configuration of the metal layer TM, the gate electrode material layer GML, or both the metal layer TM and the gate electrode material layer GML, which is in Fig. As shown in 19, it can equally refer to one or more of the items in the Fig. The cross-sectional structures shown in Figures 20 to 22 can be applied. Furthermore, the other metal conductors, such as the source / drain electrode material layer, can be used for the same applications (e.g., increasing the effective electrode area, use as side-edge touch conductors STL, or a combination thereof) as the metal layer TM, the gate electrode material layer GML, or both the metal layer TM and the gate electrode material layer GML.

[0223] Fig. Figure 23 is a view showing examples of first to third soft keys implemented in the side-edge touch detection area of ​​the display device 100 according to embodiments.

[0224] With reference to Fig. 23 For example, the first and second soft keys are implemented in the side frame part located to the left of the display device 100, while the third soft key is implemented in the side frame part located to the right of the display device 100.

[0225] For example, the first soft key might be used to increase the volume or move a control position indicator, such as a cursor, in one direction, while the second soft key might be used to decrease the volume or move the control position indicator, such as the cursor, in a second direction. The third soft key might be used to lock the screen or turn the display on or off.

[0226] With reference to Fig.23 In areas where the first to third soft keys are implemented, one or more side-edge contact electrodes STE can be arranged according to one or more structures under the variety of structures described above.

[0227] A touch detection circuit or application processor (AP) can execute a predetermined keying process according to the touch detection result obtained by the one or more side edge touch electrodes STE in the areas where the first to third soft keys are implemented.

[0228] As explained above, the display device 100 according to embodiments can be provided without hardware buttons on the edging part, since the soft button(s) are realized by the one or more side edge touch electrodes STE which operate in a touch-sensitive manner.

[0229] Accordingly, all physical hardware buttons for various user inputs can be removed from the display device 100 according to embodiments, thereby reducing the size and number of components of the display device. Furthermore, the display device 100 can be freed from design limitations imposed by physical hardware buttons, allowing it to be designed in a better and more creative way.

Claims

[1] Display device (100) comprising the following: a substrate (200) having an active area (AA) designed to display images and a non-active area (NA) at the perimeter of the active area (AA), wherein the non-active area (NA) has a first routing area (RA1) and a second routing area (RA2); a transistor (DRT) that is arranged on the substrate (200) in the active region (AA); a device insulating layer (1160) arranged over the transistor (DRT); a pixel electrode (PE) arranged above the device insulating layer (1160) and electrically connected via a contact hole in the device insulating layer (1160) to a source electrode (SE) or a drain electrode (DE) of the transistor (DRT); an emission layer (EL) that is positioned above the pixel electrode (PE); a common electrode (CE) positioned above the emission layer (EL); and an encapsulation layer (550) arranged above the common electrode (CE), located in the active area (550) and the first route area (RA1) and having an inclined surface (1100) in the first route area (RA1), wherein the display device (100) comprises at least one side-edge contact electrode (STE) located in at least one of the first route area (RA1) of the inactive area (NA), the second route area (RA2) of the inactive area (NA) and / or a combination thereof, wherein the side-edge contact electrode (STE) overlaps the inclined surface (1100) of the encapsulation layer (550) in the non-active area (NA) or is positioned further outwards in the non-active area (NA) than the inclined surface (1100) of the encapsulation layer (550). [2] Display device according to claim 1, wherein the side edge contact electrode (STE) overlaps the inclined surface (1100) of the encapsulation layer (550) in the first route area (RA1) and / or wherein the display device further comprises one or more dams (DAM1, DAM2) arranged at a boundary between the first route area (RA1) and the second route area (RA2), and wherein the side edge contact electrode (STE) is arranged further outwards than the one or more dams (DAM1, DAM2) in the second route area (RA2). [3] Display device according to claim 1 or 2, wherein the side edge contact electrode (STE) contains the same material as a touch sensor arranged in the active area (AA) and / or the same material as the electrode (AA) arranged in the active area. [4] Display device according to any one of the preceding claims, further comprising: a first insulating layer (1150) arranged below the side edge contact electrode (STE); a metal layer (TM) arranged beneath the first insulating layer (1150); a second insulating layer (1140) arranged beneath the metal layer (TM); and a gate electrode material layer (GML) located beneath the second insulating layer (1150), wherein the gate electrode material layer (GML) contains a gate electrode material that is the same as that of a gate electrode of the transistor (DRT). [5] Display device according to claim 4, wherein the side edge contact electrode (STE) contains a source / drain electrode material that is the same as that of the source electrode (SE) and / or the drain electrode (DE) of the transistor (DRT). [6] Display device according to claim 4 or 5, wherein the side-edge contact electrode (SE) is electrically connected to the metal layer (TM) via a contact hole (CNT_A) in the first insulating layer (1150) and / or wherein the metal layer (TM) is electrically connected to the gate electrode material layer (GML) via a contact hole (CNT_B) in the second insulating layer (1140) and / or wherein the side edge contact electrode (STE) is electrically connected to the gate electrode material layer (GML) via a double contact hole (CNT_AB) in the first insulating layer (1150) and the second insulating layer (1140). [7] Display device according to any one of claims 4 to 6, wherein the side edge contact electrode (STE) contains a pixel electrode material that is the same as that of the pixel electrode (PE). [8] Display device according to claim 7, wherein a source / drain electrode material layer (SDL) is arranged above the first insulating layer (1150) in the active area (AA), wherein a pixel electrode material layer providing the side-edge contact electrode (STE) is arranged above the first insulating layer (1150) in the inactive area (AA) and / or wherein the side-edge contact electrode (STE) is electrically connected to the metal layer (TM) via a contact hole (CNT_A) in the first insulating layer (1150), and / or wherein the side-edge contact electrode (STE) is electrically connected to the gate electrode material layer (GML) via a double contact hole (CNT_AB) in the first insulating layer (1150) and the second insulating layer (1140), and / or wherein the metal layer (TM) is electrically connected to the gate electrode material layer (GML) via a contact hole (CNT_B) in the second insulating layer (1140). [9] Display device according to claim 7 or 8, further comprising: a source / drain electrode material layer (SDL) arranged above the first insulating layer (1150) and containing a source / drain electrode material that is the same as that of the source electrode (SE) and / or the drain electrode (DE) of the transistor (DRT); and a circumferential insulating layer (1600) arranged above the source / drain electrode material layer (SDL) and below the side edge contact electrode (STE), containing an insulating material that is the same as that of the device insulating layer (1160), and located in the non-active area (NDA). [10] Display device according to claim 9, wherein the side-edge touch electrode (STE) is electrically connected to the source / drain electrode material layer (SDL) via a contact hole (CNT_C) in the circumferential insulating layer (1600), wherein the source / drain electrode material layer is a layer that increases an effective electrode area of ​​the side-edge touch electrode, or is a side-edge touch line through which a signal is transmitted, and / or wherein the source / drain electrode material layer (SDL) is electrically connected to the metal layer (TM) via a contact hole in the first insulating layer (1150), and / or wherein the source / drain electrode material layer (SDL) is electrically connected to the gate electrode material layer (GML) via a double contact hole (CNT_AB) in the first insulating layer (1150) and the second insulating layer (1140), and / or wherein the metal layer (TM) is electrically connected to the gate electrode material layer (GML) via a contact hole in the second insulating layer (1140). [11] Display device according to claim 9 or 10, wherein the side edge contact electrode (STE) is electrically connected to the metal layer (TM) via a double contact hole in the circumferential insulating layer (1600) and the first insulating layer (1150), and / or wherein the side edge contact electrode (STE) is electrically connected to the gate electrode material layer (GML) via a triple contact hole (CNT_ABC) in the circumferential insulating layer (1600), the first insulating layer (1150) and the second insulating layer (1140). [12] Display device according to any one of the preceding claims, further comprising: several touch sensors arranged above the encapsulation layer (550) in the active area (AA); and multiple touch lines (TL) connecting the multiple touch sensors to a touch point section located in the non-active area (NA); wherein the multiple touch lines (TE) from the multiple touch sensors located in the active area (AA) extend downwards along the inclined surface of the encapsulation layer (1100). [13] Display device according to claim 12, wherein the multiple touch sensors comprise multiple touch electrodes (TEr, TEc) and multiple bridges (BP), wherein each of the multiple bridges (BP) connects two adjacent touch electrodes (TEr) under the multiple touch electrodes (TEr, TEc), wherein the multiple touch electrodes (TEr, TEc) and the multiple bridges (BP) are arranged in different layers, with a sensor insulating layer (1820) arranged between them. [14] Display device according to claim 13, wherein the side edge contact electrode (STE) comprises a contact electrode metal that is the same as that of the multiple contact electrodes (TEr, TEC) and / or a bridge metal that is the same as that of the multiple bridges (BP). [15] Display device according to claim 13 or 14, wherein the multiple touch electrodes (TEr, TEc) comprise at least one first touch electrode (TEr) extending to the first route area (RA1), and wherein the at least one side edge touch electrode (STE) comprises a first side edge touch electrode (STE) that intersects a section of the first touch electrode (TEr) extending to the first route area (RA1). [16] Display device according to claim 15, wherein the section of the first touch electrode (TEr) extending to the first route area (RA1) and the side edge touch electrode (STE) are in a single layer and the section of the first touch electrode (TEr) comprises: a first section located between the active area (AA) and the side-edge contact electrode (STE); a second section that is further away from the active area (AA) than the side-edge contact electrode (STE); and a bridge (BP) connecting the first section and the second section. [17] Display device according to claim 15 or 16, wherein the section of the first touch electrode (TEr) extending to the first route area (RA1) extends beyond the first route area (RA1) to the second route area (RA2); and wherein the at least one side edge touch electrode (STE) further comprises a second side edge touch electrode (STE) that intersects the section of the first touch electrode (TEr) extending to the second route area (RA2). [18] Display device according to any one of claims 13 to 17, wherein the multiple touch sensors comprise a first touch sensor extending to the first route area (RA1) of the inactive area (NA), and wherein a section of the first touch sensor extending to the first route area (RA1) corresponds to the side edge touch electrode (STE) and includes a touch electrode metal that is the same as that of the multiple touch electrodes (TEr, TEC) or a bridge metal that is the same as that of the multiple bridges (BP). [19] Display device according to any one of the preceding claims, further comprising: at least one side-edge contact line (STL) arranged in the first routing area (RA1), the second routing area (RA2) and / or a combination thereof, and electrically connected to the at least one side-edge contact electrode (STE); and a touch detection circuit designed to detect a touch according to a change in the capacitance of the side edge touch electrode (STE) through the side edge touch line (STL), and designed to perform a predetermined keying process depending on whether the touch is detected or not. [20] Display device according to one of the preceding claims, wherein the substrate (200) is bendable and / or flexible and / or wherein the first route area (RA1), the second route area (RA2) and / or a combination thereof is directed towards one side of the display device and / or corresponds to a lateral edging part of the display device.

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