LED Module

Abstract

Light-emitting diode module, LED module, which is configured to emit white light, wherein the LED module has: a blue light-emitting diode (30) configured to emit blue light with a first peak wavelength in a range of 420 nm to 465 nm; at least one wavelength conversion material (54, 56) configured to convert part of the blue light into converted light of another wavelength; and a near-infrared wavelength conversion material (58) configured to be excited by the blue light of the blue light-emitting diode (30) to emit an additional light with a second peak wavelength in a range of 740 nm to 900 nm and a full width at half maximum (FWHM) of 120 nm or less, wherein the near-infrared wavelength conversion material (58) Ca(Al 12-x-y ,Ga y )O 19 :xCr 3+ (0≤x≤1, 0≤y≤6) exhibits, where the converted light, another part of the blue light, and the additional light combine to form the white light, and wherein a spectrum of the white light thus formed has a peak intensity in the range of 740 nm to 900 nm, and the peak intensity is greater than or equal to 4.5% of a peak intensity in a blue band from 420 nm to 465 nm.

Description

BACKGROUND 1. Area

[0001] Embodiments of the present invention relate to a light-emitting diode (LED) module. 2. Description of the related technology

[0002] In general, an LED lighting device can include an LED module that contains at least one LED chip emitting light of a specific wavelength.

[0003] In particular, an LED lighting device (e.g., a white light device) can be configured to emit white light. A white light device using LEDs can include LED chips of different wavelengths or can include an LED module in which a wavelength conversion material, such as a phosphor, is combined with at least one LED chip.

[0004] In recent years, there has been a demand for life-friendly (or human-friendly) light that takes into account biological effects on humans and living organisms as well as conventional light functions.

[0005] An optoelectronic radiation device, in particular for generating and emitting health-promoting and regenerative radiation, is known, for example, from DE 10 2019 102 508 A1. It comprises: at least one or more optoelectronic radiation sources designed to generate infrared radiation, and at least one optoelectronic radiation source for generating white light, wherein the infrared radiation lies in an infrared spectral range between 600 nm and 900 nm.

[0006] Luminescent materials with emission in the near-infrared wavelength range are known from US patent 2020 / 0326277 A1.

[0007] WO 2020 / 107 425 A1 discloses a phosphor mixture which can emit white light when excited with violet light. SUMMARY

[0008] The object of the present invention is to create an LED module that promotes the production of ATP.

[0009] An LED module according to the invention is defined by claim 1. Further developments of the LED module are the subject of the dependent claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The foregoing and other aspects, features, and advantages of the present invention will be clearly evident from the following detailed description in conjunction with the accompanying drawings. Embodiments not covered by the scope of the claims are examples of comparison intended to aid understanding of the invention. They show: Fig. 1 a schematic cross-sectional view representing an LED module according to an exemplary embodiment of the present disclosure; Fig. 2A an emission spectrum of white light emitted by an LED module according to an exemplary embodiment of the present disclosure; Fig. 2B an emission spectrum of white light emitted by an LED module according to an exemplary embodiment of the present disclosure; Fig. 3A a spectrum of effects for stimulating the rate of DNA synthesis in cells; Fig. 3B a graph representing skin penetration depth according to a wavelength; Fig. 4 the ATP spectrum of activity used in exemplary embodiments of the present disclosure; Fig. 5 a graph representing an emission spectrum of a near-infrared (NIR) wavelength conversion material that can be used in an LED module according to an exemplary embodiment of the present disclosure; Fig. 6 presents emission spectra of white light emitted by LED modules according to examples and comparative examples in the present disclosure; Fig. 7A a first schematic cross-sectional view representing a light-emitting diode chip used in a white light-emitting device according to an exemplary embodiment of the present disclosure; Fig. 7B a second schematic cross-sectional view showing the light-emitting diode chip used in the white light-emitting device according to the exemplary embodiment of the present disclosure; Fig. 8 an emission spectrum of white light from a white light-emitting device according to an exemplary embodiment of the present disclosure; Fig. 9 an emission spectrum of white light from a white light emitting device according to an exemplary embodiment of the present disclosure; Fig. 10 a schematic cross-sectional view representing an LED module according to an exemplary embodiment of the present disclosure; Fig. 11A a schematic cross-sectional view representing an LED module according to an exemplary embodiment of the present disclosure; Fig. 11B a schematic cross-sectional view representing an LED module according to an exemplary embodiment of the present disclosure; Fig. 12 a block diagram of an LED lighting device according to an exemplary embodiment of the present disclosure; Fig. 13 a perspective view of an LED module according to an exemplary embodiment of the present disclosure; Fig. 14 a lateral cross-sectional view of the LED module according to the exemplary embodiment of the present disclosure; Fig. 15 A side cross-sectional view showing an example of a white light-emitting device made of LED light-emitting module Fig. 13 can be used; Fig. 16 a lateral cross-sectional view showing a first and a second LED package that can be inserted into the LED module according to an exemplary embodiment of the present disclosure; Fig. 17 a schematic perspective view of a flat panel lighting device according to an exemplary embodiment of the present disclosure; and Fig. 18 a perspective exploded view showing a light bulb type lighting device according to an exemplary embodiment of the present disclosure. DETAILED DESCRIPTION

[0011] Exemplary embodiments of the present disclosure are described below with reference to the accompanying drawings.

[0012] Fig. Figure 1 is a schematic cross-sectional view representing an LED module according to an exemplary embodiment of the present disclosure.

[0013] Referring to Fig. 1. An LED module 100 according to the present exemplary embodiment can comprise a package substrate 10, a light-emitting diode (LED) 30 located on the package substrate 10, and a wavelength conversion unit 50. The LED module 100 can further comprise a pair of lead frames 11 and 12 electrically connected to the LED 30, a sidewall reflection unit 20 having a cup shape, and a conductive wire 33 connecting the LED 30 (e.g., a blue LED) and the lead frames 11 and 12. In this description, the term "LED module" includes "LED package".

[0014] In some exemplary embodiments, the package substrate 10 can be made of an opaque resin or a resin with high reflectivity. The package substrate 10 can, for example, also comprise a resin containing a highly reflective powder (e.g., TiO2). In some exemplary embodiments, the package substrate 10 can be made of a ceramic that allows heat to be easily dissipated. In some exemplary embodiments, the package substrate 10 can be a circuit board having a wiring pattern that replaces the lead frames 11 and 12.

[0015] The sidewall reflection unit 20 can be located on the package substrate 10 and the lead frames 11 and 12 and can have a cavity for receiving the LED 30. The sidewall reflection unit 20 can have a cup shape to improve light reflection efficiency; however, it is not limited to this. In some exemplary embodiments, the sidewall reflection unit 20 can also be formed integrally with the package substrate 10. The sidewall reflection unit 20 and the package substrate 10 can, for example, be formed from the same material (e.g., a resin containing a highly reflective powder) by the same process (e.g., injection molding).

[0016] The LED module 100 according to the present exemplary embodiment can be an LED module configured to emit white light.

[0017] The LED 30 can be a blue LED comprising an epitaxial semiconductor layer configured to emit blue light. The blue light emitted by the LED 30 can have a peak wavelength in the range of 420 nm to 465 nm. In some exemplary embodiments, the blue light can have a peak wavelength in the range of 430 nm to 455 nm.

[0018] The wavelength conversion unit 50 can be located on an optical path of the LED 30 and can comprise a plurality of wavelength conversion materials dispersed in a transparent resin 52. The plurality of wavelength conversion materials can include a first to third wavelength conversion material 54, 56, and 58, which are excited by blue light generated by the LED 30 to emit light of different wavelengths. The transparent resin 52 can be, for example, epoxy, silicone, modified silicone, urethane resin, oxetane resin, acrylic resin, polycarbonate, polyimide, and combinations thereof. Instead of dispersing the first to third wavelength conversion material 54, 56, and 58 in the transparent resin 52, in some exemplary embodiments, the transparent resin 52 can be applied directly to a surface of the LED 30 (see first LED light source 100' in Figure 1). Fig. 15).

[0019] The first wavelength conversion material 54 and the second wavelength conversion material 56 used in the present exemplary embodiment can each be configured to emit a first and a second light of different colors within a wavelength band for visible light. The first and second lights can be combined with a unit of unconverted blue light to emit a desired white light. In some exemplary embodiments, a peak wavelength of the first light can range from 520 nm to 560 nm, and a peak wavelength of the second light can range from 600 nm to 660 nm. The first wavelength conversion material 54 can, for example, be (Ga,Gd,Y,Lu)3Al5O 12 :Ce 3+ , La3Si6N 11 :Ce 3+ , (Sr,Ca,Ba)Si2O2N2:Eu 2+ , (Sr,Ba)2SiO4:Eu 2+ , β-SiAlON:Eu 2+or a combination thereof. The second wavelength conversion material 56 can be (Sr,Ca)AlSiN3:Eu 2+ , CaAlSiN3:Eu 2+ , K x SiF y :Mn 4+ (2≤x≤3, 4≤y≤7) (hereinafter referred to as KSF) or a combination thereof.

[0020] The white light thus obtained has a color rendering index (CRI) of 70 or higher, and a wavelength conversion material and its mixing ratio can be selected appropriately so that it exhibits a suitable color temperature. In some exemplary embodiments, the color temperature (CCT) of the white light can be designed to be in the range of 1,800 to 6,500 K.

[0021] A third wavelength conversion material (e.g., wavelength conversion material 58) used in the present exemplary embodiment can be configured to emit light in a near-infrared band. Light in the near-infrared band can have a peak wavelength of 740 nm to 900 nm. In some exemplary embodiments, light in the near-infrared band can have a peak wavelength of 750 nm to 850 nm. In some exemplary embodiments, light in the near-infrared band can have a full width at half maximum (FWHM) of 120 nm or less.

[0022] Fig. 2A represents an emission spectrum of white light emitted by an LED module according to an exemplary embodiment of the present disclosure.

[0023] Referring to Fig. 2A is a spectrum of white light shown, emitted by an LED module similar to the LED module 100, which is in Fig. Figure 1 shows the emission. In particular, according to the present exemplary embodiment, the LED module can comprise a blue LED chip with a peak wavelength of 448 nm and can have a structure incorporating a phosphor CaAl 12-x O 19 :xCr 3+ (0≤x≤1) (see Fig. 5) used as a third wavelength conversion material for near-infrared light, together with (Ga,Gd,Y,Lu)3Al5O 12 :Ce 3+ and CaAlSiN3:Eu 2+ as the first and second wavelength conversion material, respectively. Spectrum 2, on the other hand, represents a spectrum of white light emitted by the LED module in which only the third wavelength conversion material in the LED module 100 described above is omitted.

[0024] In the spectrum 1 of white light according to the present exemplary embodiment, a peak intensity between 740 nm and 900 nm can be 4.5% or more of a peak intensity in a blue band (e.g. 420 nm to 465 nm), and in some exemplary embodiments it can be 7% or more.

[0025] In the spectrum 1 of white light, the intensity of a near-infrared band can be increased by the wavelength conversion material 58. Light amplification in the near-infrared band according to the present exemplary embodiment can be achieved by an integrated amount of light from 750 nm to 850 nm. An integrated amount of light from 750 nm to 850 nm according to the present exemplary embodiment can be increased by at least 1.3 times compared to an integrated amount of light from 750 nm to 850 nm before the wavelength conversion material 58 is applied. In some exemplary embodiments, the amount of integrated light from 750 nm to 850 nm can be increased by a factor of two or more.

[0026] As described above, the wavelength conversion material 58 in the present embodiment can have a positive biological effect, such as promoting the production of ATP by increasing the intensity of the band from 740 nm to 900 nm in white light.

[0027] In some exemplary embodiments, light can have a high intensity in a band from 740 nm to 900 nm, which is somewhat offset from the wavelength band for visible light by the wavelength conversion material 58, taking into account a biological enhancement efficiency. As in Fig. As shown in Figure 2A, the spectrum 1 of white light according to the present exemplary embodiment can have at least one valley between successive peak wavelengths in a wavelength band for visible light.

[0028] Meanwhile, a wavelength conversion material 58 is excited by a portion of the light emitted by the LED 30 to convert it into a wavelength that may be slightly lower than that of the wavelength band for visible light in spectrum 2 for white light. As described above, the illuminance of the illuminant light (e.g., white light) can be slightly reduced by the wavelength conversion material 58.

[0029] Fig. 2B represents spectrum 3 of an example in which CaAlSiN3:Eu 2+ , which is used as a second wavelength conversion material (red phosphor), is used as a KSF phosphor in the LED module according to the present exemplary embodiment, which is in Fig. 2A is used.

[0030] Referring to Fig. 2B, similar to the spectrum of the previous exemplary embodiment, it is possible to create an effect to promote ATP production by increasing the intensity of a wavelength band from 740 nm to 900 nm (e.g. a peak wavelength of 785 nm), since a phosphor CaAl 12-x O 19 :xCr 3+ (0≤x≤1), a near-infrared wavelength conversion material, is introduced in a wavelength band from 740 nm to 900 nm (e.g. 785 nm).

[0031] In the following, a wavelength condition of the near-infrared beam required in the present disclosure, together with a positive biological effect that uses an enhancement of the near-infrared band, is described in detail.

[0032] It is generally known that light in the near-infrared band is absorbed by cytochrome c oxidase, which is located in an inner mitochondrial membrane, to promote the production of ATP (adenosine triphosphate), which is a source of energy in cells.

[0033] A spectrum of activity 4 for stimulating a rate of DNA synthesis in cells can be expressed by the uptake of chromophores by cytochrome c oxidase, as in Fig. 3A shown (see Fig. 1. Article “Multiple Roles of Cytochrome c Oxidase in Mammalian Cells Under Action of Red and IR-A Radiation” by Tiina I. Karu). Referring to Fig. 3A has this spectrum of activity with four absorption peaks at 620 nm, 680 nm, 760 nm and 820 nm, which are significant in a red to near-infrared region.

[0034] Despite this spectrum of effects 4, a spectrum that actually impairs ATP production can change depending on the skin transmission rate. This skin transmission rate can be defined as the skin penetration depth according to a wavelength. Referring to Graph 5 from Fig. 3B has a skin penetration depth that peaks in a band of 820 nm according to the wavelength, is relatively high in an infrared band, but appears relatively low in a wavelength band for visible light.

[0035] Embodiments of the present disclosure include a method for defining a spectrum calculated by taking a spectrum of action of cytochrome c oxidase (see Fig. 3A) with a skin penetration depth (see Fig. 3B) is multiplied according to a wavelength as an ATP action spectrum. The ATP action spectrum from embodiments of the present disclosure is in Fig. 4 shown.

[0036] Referring to Fig. 4. The ATP action spectrum exhibits a similar peak wavelength to four absorption peaks of the cytochrome c oxidase action spectrum, but the four peaks can each fluctuate to the peaks at 626 nm, 674 nm, 766 nm, and 810 nm due to the skin transmission rate. Furthermore, the ATP action spectrum can appear relatively low in the visible band of 626 nm and 674 nm and relatively high in the near-infrared band of 766 nm and 810 nm and a band close to these.

[0037] Taking such practical efficiency into account, an “effective ATP efficacy range (EA)” can be defined as the ATP efficacy spectrum that is found in Fig. Figure 4 shows that the effective ATP efficacy band is defined as a near-infrared band (EOA) centered at 740 nm to 900 nm. In some exemplary embodiments, an effective ATP efficacy band can also be set to a region EA1 with light having a peak wavelength of 750 nm to 850 nm. This effective ATP efficacy band (region EA0 or region EA1) can reduce the influence of a basic illumination light (e.g., white light or colored light) by an ATP-promoting light according to the present disclosure by selecting the near-infrared band such that the wavelength band for low-efficiency visible light is minimized.

[0038] In the present exemplary embodiment, the wavelength conversion material 58, which is introduced to promote ATP production, can be excited by the blue light so that it is configured to emit a third light covering the effective ATP efficacy band EA described above. The third light can have a peak wavelength of 740 nm to 900 nm. In some exemplary embodiments, the third light converted by the wavelength conversion material 58 can have a peak wavelength of 750 nm to 850 nm. The third light can penetrate human skin and is absorbed by cytochrome c oxidase in cells, thereby substantially contributing to the promotion of ATP production, which is an energy source in cells.

[0039] In the present exemplary embodiment, a light source for generating light in the near-infrared band can be designed with a wavelength conversion material, such as an inorganic phosphor and / or a quantum dot. The wavelength conversion material 58 can, for example, be the phosphor CaAl 12-x O 19 :xCr 3+ (0≤x≤1) include.

[0040] Fig. Figure 5 represents a spectrum 6 of a third light (excitation light: a peak wavelength of 448 nm) from a phosphor CaAl 12-x O 19 :xCr 3+ This represents the wavelength conversion material 58 that can be used in the present exemplary embodiment.

[0041] Referring to Fig. 5. A spectrum 6 of a third light exhibits a maximum peak wavelength of approximately 785 nm and a full width at half maximum (FWHM) of approximately 95 nm. Since this spectrum 6 has a high amount of light in the effective ATP activity band of 740 nm to 900 nm described above, a spectrum of white light can increase the integrated amount of light in the effective ATP activity band (EA), as described with reference to Fig. 2 described, to influence a biological effect that promotes the production of ATP, an energy source in cells. Furthermore, the phosphor used in the present exemplary embodiment can exhibit a secondary peak at 690 nm in the spectrum 6 of the third light.

[0042] When a wavelength conversion material 58 is used as a near-infrared light source, a portion of the light emitted by the LED 30 is used as excitation light for the wavelength conversion material 58, thus lowering the spectrum of the wavelength band for visible light in general. This means that the illuminance of the illuminating light (e.g., white light) can be slightly reduced by the wavelength conversion material 58.

[0043] As described above, the wavelength conversion material 58 can be configured according to the present exemplary embodiment to emit light with a peak wavelength of 740 nm to 900 nm and a full width at half maximum (FWHM) of 120 nm or less.

[0044] In the spectrum 6 of the third light, which is in Fig. As shown in Figure 5, an integrated amount of light in an infrared band (700 nm or more) based on a wavelength of 700 nm can be higher than an integrated amount of light in a visible light wavelength band (700 nm or less) to enhance an ATP production-promoting effect. Although not limited to this, the integrated amount of light in the visible light wavelength band of 700 nm or less can be 20% or less of the integrated amount of light in the entire spectrum of the third light, or it can be 10% or less in some exemplary embodiments.

[0045] In the present exemplary embodiment, a wavelength conversion material, such as a phosphor, is used as a near-infrared light source, but it can also include other types of phosphor. For example, in addition to Ca(Al 12-x-y ,Ga y )O 19 :xCr 3+(0≤x≤1, 0≤y≤6) encompassing the phosphor of the previous example can be Lu3Al5O 12 :Ce 3+ ,Cr 3+ , La3MgZrO6:Cr 3+ , LiInSi2O6:Cr 3+ , LiZnSnO:Cr 3+ , ScBO3:Cr 3 or a combination thereof. Furthermore, the near-infrared wavelength conversion material can include quantum dots in addition to phosphors having the composition described above. In some exemplary embodiments, the near-infrared light source can include an LED chip (see Fig. 10 and Fig. 11B).

[0046] Fig. Figure 6 shows an emission spectrum of white light emitted by an LED module, according to an example and a comparison example.

[0047] White LED modules were manufactured according to an example and a comparison example as disclosed herein. First, in the white LED module according to the comparison example, a white LED module emitting white light with a color rendering index of 80 was manufactured by mixing green and red phosphors together with a blue LED chip having a peak wavelength of 448 nm. White light according to the comparison example exhibits in Fig. 6 a spectrum B1 on.

[0048] In contrast, the white LED module according to the present exemplary embodiment was produced with a color rendering index of 80, similar to the comparison example, by combining green and red phosphors with a phosphor CaAl 12-x O 19 :xCr 3+ were combined, which is a near-infrared light source. The white light according to the example has a spectrum that is in Fig. 6 is marked with “A2”.

[0049] If a region in which a white light spectrum (B1) of the comparison example is used with the one in Fig. The area where the ATP action spectrum shown in Figure 4 overlaps (defined as the product of the two spectra) is 100, it was found that a region where a white light spectrum (A2) of the example overlaps with the ATP action spectrum is 250. Regarding the illuminance, it can be confirmed that by using a wavelength conversion material (e.g., CaAl 12-x O 19 :xCr 3+ ) is used as a near-infrared light source, this is slightly reduced by using part of an excitation light, but an effective light corresponding to the ATP action spectrum is greatly increased by a factor of 2 or more.

[0050] Fig. 7A and Fig. Figure 7B are schematic cross-sectional views representing a light-emitting chip used in a white light-emitting device according to an exemplary embodiment of the present disclosure.

[0051] Referring to Fig. 7A comprises an LED chip 30A, which is used in the present exemplary embodiment, a substrate 31, and a semiconductor laminate S located on the substrate 31. The semiconductor laminate S can comprise a semiconductor layer 34 of a first conductivity type, an active layer 35, and a semiconductor layer 36 of a second conductivity type, arranged sequentially on the substrate 31. A buffer layer 32 can additionally be arranged between the substrate 31 and the semiconductor layer 34 of the first conductivity type.

[0052] The substrate 31 can be an insulating substrate such as sapphire. However, embodiments of the present disclosure are not limited to this, and the substrate 31 can be a conductive or semiconductor substrate and also possess insulating properties. In addition to sapphire, the substrate 31 can be, for example, SiC, Si, MgAl₂O₄, MgO, LiAlO₂, LiGaO₂, and GaN. A surface irregularity P can be formed on an upper surface of the substrate 31. The surface irregularity P can improve the quality of single-crystal growth while simultaneously improving light extraction efficiency.

[0053] Buffer layer 32 can contain undoped in x Al y Ga 1-x-y N (0≤x≤1, 0≤y≤1). The buffer layer 32 can, for example, be GaN, AlN, AlGaN, or InGaN. According to embodiments, a plurality of layers can be combined as the buffer layer 32, or its composition can be gradually changed.

[0054] The semiconductor layer 34 of the first conductivity type can be a nitride semiconductor, which is n-type Al x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) is satisfied, and n-conducting impurities can be Si. For example, the semiconductor layer 34 of the first conductivity type can be n-conducting GaN. The semiconductor layer 36 of the second conductivity type can be a nitride semiconductor layer, which In x Al y Ga 1-x-y N of the p-type is fulfilled, and p-conducting impurities can be Mg. For example, the semiconductor layer 36 of the second conductivity type can be implemented in a single-layer structure, but it can have a multi-layer structure with different compositions, as in the present exemplary embodiment.

[0055] The active layer 35 can have a multiple quantum well (MQW) structure in which a quantum well layer and a quantum barrier layer are stacked alternately. The quantum well layer and the quantum barrier layer can, for example, be in x Al y Ga 1-x-y N (0≤x≤1, 0≤y≤1 and 0≤x+y≤1) with different compositions. In a specific example, the quantum well layer In x Ga 1-x N (0 <x≤1) sein und die Quantenbarriereschicht kann GaN oder AlGaN sein. Die Dicke der Quantentopfschicht und der Quantenbarriereschicht kann jeweils von 1 nm bis 50 nm reichen. Die aktive Schicht 35 ist möglicherweise nicht auf eine mehrfache Quantentopfstruktur beschränkt und kann eine einfache Quantentopfstruktur sein.

[0056] A first electrode 39a and a second electrode 39b can each be arranged on a mesa-etched region of the semiconductor layer 34 of the first conductivity type and the semiconductor layer 36 of the second conductivity type, respectively, so that they are positioned on the same area. The first electrode 39a is not limited thereto and can comprise a material such as Ag, Ni, Al, Cr, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, or the like, and can be used in a single layer or two or more layers. In some exemplary embodiments, the second electrode 39b can be a transparent electrode, such as a transparent conductive oxide or a transparent conductive nitride, or it can also comprise graphene. The second electrode 39b can comprise at least one element of Al, Au, Cr, Ni, Ti, and Sn.

[0057] Referring to Fig. 7B, it is understood that the LED chip 30B according to the present exemplary embodiment corresponds to the LED chip 30A, which is in Fig. Figure 7A is similar, except for an electrode structure and an associated structure. For a description of the components of the present embodiment, unless otherwise specified, reference is made to the description of components that are identical to those in Figure 7A. Fig. The LED chip shown in the 6A diagram is rated for 30A or is similar to it.

[0058] The LED chip 30B comprises a first electrode 42 and a second electrode 44, each connected to the semiconductor layer 34 of the first conductivity type and the semiconductor layer 36 of the second conductivity type, respectively. The first electrode 42 can include a connecting electrode assembly 42a, which extends through the semiconductor layer 36 of the second conductivity type and the active layer 35 and is connected to the semiconductor layer 34 of the first conductivity type, and a first electrode pad 42b, which is connected to the connecting electrode assembly 42a. The connecting electrode assembly 42a can have the same structure as a conductive via. The connecting electrode assembly 42a can be surrounded by the insulating assembly 41, thus electrically isolating it from the active layer 35 and the semiconductor layer 36 of the second conductivity type.The connecting electrode assembly 42a can be arranged in a region where the semiconductor laminate S is etched. The number, shape, spacing, or contact area with the semiconductor layer 34 of the first conductivity type can be advantageously designed such that the connecting electrode assembly 42a reduces contact resistance. Furthermore, the connecting electrode assembly 42a can be arranged on the semiconductor laminate S such that rows and columns are formed, thereby improving current flow. The second electrode 44 can comprise an ohmic contact layer 44a and a second electrode pad 44b on the semiconductor layer 36 of the second conductivity type.

[0059] In the connecting electrode unit 42a and the ohmic contact layer 44a, a conductive material with ohmic properties with respect to the semiconductor layer 34 of the first conductivity type and the semiconductor layer 36 of the second conductivity type can have a single-layer or multi-layer structure. It can be formed, for example, by a process in which at least one metal, such as Ag, Al, Ni, and Cr, and a transparent, electrically conductive oxide (TCO), such as ITO, are deposited or sputtered.

[0060] The first electrode pad 42b and the second electrode pad 44b can each be connected to the connecting electrode unit 42a and the ohmic contact layer 44a, thus serving as external terminals for the LED chip 30B. The first electrode pad 42b and the second electrode pad 44b can be made of materials such as Au, Ag, Al, Ti, W, Cu, Sn, Ni, Pt, Cr, NiSn, TiW, AuSn, or eutectics thereof.

[0061] The first electrode pad 42b and the second electrode pad 44b can be arranged in the same direction and can be mounted on a lead frame or the like in a so-called flip-chip configuration. Meanwhile, the first electrode 42 and the second electrode 44 can be electrically separated from each other by the insulating unit 41. The insulating unit 41 can be made of any material with electrical insulating properties, or it can be made of a material with a low light absorption rate. For example, silicon dioxide or silicon nitride can be used. According to embodiments, a light-reflecting structure can be formed by distributing a light-reflecting powder in a light-transmitting material.Alternatively, the insulating unit 41 can have a multilayer reflective structure in which a plurality of insulating layers with different refractive indices are stacked alternately. The multilayer reflective structure can, for example, be a distributed Bragg reflector (DBR) in which a first insulating layer with a first refractive index and a second insulating layer with a second refractive index are stacked alternately.

[0062] In the multilayer reflective structure, multiple insulating layers with different refractive indices can be stacked 2 to 100 times. For example, multiple insulating layers can be stacked 3 to 70 times, and furthermore, 4 to 50 times. Each of the multiple insulating layers in the multilayer reflective structure can be an oxide or nitride, such as SiO₂, SiN, or SiO₂. x N y, TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN and combinations thereof. The refractive indices of the first and second insulating layers can be determined in a range of approximately 1.4 to approximately 2.5 and may have a value lower than the refractive index of the semiconductor layer 34 of the first conductivity type and the refractive index of the substrate 31, but they may also have a lower value than the refractive index of the semiconductor layer 34 of the first conductivity type and a higher value than the refractive index of the substrate 31. The LED chip 30A and the LED chip 30B described above can be used as LED 130 (e.g., blue LED) of a white light-emitting device (e.g., LED module 100 or LED module 100A).

[0063] The near-infrared light source for promoting the production of ATP according to the present disclosure can advantageously be combined with various white illumination light sources. Fig. 8 and Fig. Figure 9 represents emission spectra of white light from a white light-emitting device according to various exemplary embodiments of the present disclosure.

[0064] Referring to Fig. Figure 8 shows a spectrum W1 of white light to reduce blue light hazard (BLH) by using a relatively soft second blue light together with the first blue light.

[0065] The white light can reduce BLH by controlling the intensity ratio of the first and second blue light and can increase the color rendering index through a combination of the first wavelength conversion material 54 and the second wavelength conversion material 56. For example, the peak intensity of the second blue light can be 50% or more compared to the peak intensity of the first blue light. For a BLH reduction effect, the peak intensity ratio of the two blue light units can be 70% or more, and furthermore, the peak intensity of the second blue light can be selected to be greater than the peak intensity of the first blue light.

[0066] As in Fig. As shown in Figure 8, adding a near-infrared (NIR) light source with a peak intensity of 740 nm to 900 nm can create a beneficial bio-effect, such as promoting ATP production. The NIR light source can be a wavelength conversion material or an LED. The intensity of the peak light produced by the NIR light source can be 4.5% or more of the intensity of the maximum peak in the blue band (e.g., 420 nm to 465 nm) and, in some exemplary embodiments, 7% or more.

[0067] By combining a first and a second wavelength conversion material configured to emit a first light with a peak wavelength of 520 nm to 560 nm (e.g., cyan, green, or yellow) and a second light with a peak wavelength of 590 nm to 655 nm, in the present exemplary embodiment, together with a first blue light with a peak wavelength of 430 nm to 455 nm (e.g., an LED chip) and a second blue light with a peak wavelength of 465 nm to 495 nm (e.g., an LED chip or a wavelength conversion material), a white light can be provided which has a color rendering index (CRI) of 80 or more and is human-friendly.

[0068] The white light according to the present exemplary embodiment can have a slightly higher color temperature of 4,000 K. As described above, a human-friendly white light with a high color temperature of 3,000 K or more can be provided by using sufficient blue light, since BLH can be reduced. Furthermore, because the near-infrared light is enhanced, it can contribute to promoting ATP production.

[0069] Referring to Fig. Figure 9 shows a W2 spectrum of white light in which blue light, which is a melanopic sensitive bandwidth, is reduced, as shown.

[0070] By reducing the intensity of the melanopically sensitive band, particularly in the 465 nm to 495 nm range, a green and a red wavelength conversion material can be used to achieve a color rendering index of 80% or higher while controlling the melanopic-photopic ratio (W2) of the white light to as low as 0.37. To implement the white light under these conditions, the green wavelength conversion material can be configured to emit light with a peak wavelength of 535 nm to 550 nm, and the red wavelength conversion material can be configured to emit light with a peak wavelength of 610 nm to 660 nm. Specifically, the green wavelength conversion material can emit light with a full width at half maximum (FWHM) of 60 nm or less to reduce the 465 nm to 495 nm region in the spectrum of the final white light.The green wavelength conversion material can be, for example, β-Si. 6-z Al z O z N 8-z :Eu 2+ z (0.01≤z≤5.99) include.

[0071] As in Fig. As shown in Figure 9, a near-infrared (NIR) light source with a peak intensity at 740 nm to 900 nm can be added, similar to the previous exemplary embodiment, to provide a beneficial bio-effect, such as promoting ATP production. The NIR light source can comprise a wavelength conversion material or an LED. A peak of light generated by the NIR light source can have an intensity of 4.5% or more of the maximum peak in the blue band (e.g., 420 nm to 465 nm) and can be 7% or more in some exemplary embodiments.

[0072] The white light according to the present exemplary embodiment is shown with a color temperature of 2,200 K, but can be implemented such that it has different color temperature ranges. As the color temperature increases, the melanopic-photonic ratio tends to increase. The white light can be implemented such that it has a relatively low melanopic ratio in the range of 1,800 K to 4,000 K. For example, the white light can have a melanopic ratio in the range of 0.1 to 0.65 in the range of 1,800 K to 4,000 K.

[0073] As described above, it is possible to provide sufficient illumination with white light with a high color rendering index, while promoting the release of the hormone melatonin, and at the same time enhance near-infrared light, thereby helping to promote the generation of ATP.

[0074] The near-infrared light source for photobiomodulation can be combined with a white illumination light source to provide a white illumination device (or a white LED module) with enhanced biological functions. The near-infrared light source can also include a near-infrared LED chip in addition to a wavelength conversion material, such as a phosphor or a quantum dot, which utilizes an excitation light source. Fig. Figure 10 is a schematic cross-sectional view showing an LED module comprising an additional LED chip for near-infrared light as an exemplary embodiment of the present disclosure.

[0075] Referring to Fig. 10. It is understood that an LED module 100A according to the present embodiment corresponds to the one described in Fig. 1 is similar to the LED module shown, except that an additional LED chip (e.g. a near-infrared LED 40) is used instead of a wavelength conversion material (e.g. wavelength conversion material 58). Fig. 1) is used as a near-infrared light source. A description of the components of the present exemplary embodiment may refer to the description of the same or similar components of the LED module 100, which is used in Fig. Figure 1 is shown, unless otherwise specified.

[0076] A wavelength conversion unit 50A, which is used in the present exemplary embodiment, comprises a first wavelength conversion material 54 which emits a first light with a peak wavelength of 520 nm to 560 nm, a second wavelength conversion material 56 which emits light with a peak wavelength of 600 nm to 650 nm, and a transparent resin 52 in which the first wavelength conversion material 54 and the second wavelength conversion material 56 are distributed.

[0077] The LED module 100A according to the present exemplary embodiment can include a near-infrared LED 40 in addition to the LED 30 (e.g. blue LED).

[0078] The near-infrared LED 40 can be configured to emit light with a wavelength in a near-infrared band. Light in the near-infrared band used in the present exemplary embodiment can have a peak wavelength of 740 nm to 900 nm. In a spectrum of the final white light, the peak intensity at 740 nm to 900 nm can be 4.5% or more of the maximum peak in the blue band (e.g., 420 nm to 465 nm) and can be 7% or more in some exemplary embodiments.

[0079] As described above, it is possible to create a positive biological effect, such as promoting ATP production, by amplifying light in the near-infrared band. In the present exemplary embodiment, the near-infrared LED 40 is shown as a single unit, but in some exemplary embodiments, a plurality of near-infrared LEDs 40 can be configured to emit light with different peak wavelengths in a range from 740 nm to 900 nm. For example, the plurality of near-infrared LEDs can be configured, taking into account the Fig. The ATP action spectrum shown in Figure 4 comprises a first LED chip with a peak wavelength of 620 nm to 720 nm and a second LED with a peak wavelength of 720 nm to 900 nm.

[0080] In the present exemplary embodiment, the near-infrared LED 40 is shown in a form which is surrounded by a wavelength conversion unit 50A, together with the LED 30, but in another exemplary embodiment the near-infrared LED 40 can be arranged separately from the wavelength conversion unit 50A ( Fig. 14).

[0081] The LED module (or lighting device) according to the present exemplary embodiment illustrates a configuration in which a near-infrared light source for photobiomodulation is combined with a white lighting light source, but it can be applied in a similar manner to other colored (blue, green, or red) LED modules comprising at least one LED chip. Such an LED module is in Fig. 11A and Fig. 11B is shown.

[0082] Referring to Fig. According to the present exemplary embodiment, an LED module 100B can comprise a package substrate 10, a light-emitting diode (LED) 30 located on the package substrate 10, and a wavelength conversion unit 50B comprising a wavelength conversion material. The LED module 100B can further comprise a pair of lead frames 11 and 12 electrically connected to the LED 30, a sidewall reflection unit 20 having a cup shape, and a conductive wire 33 connecting the LED 30 and the lead frames 11 and 12.

[0083] The LED 30 used in the present exemplary embodiment can comprise an epitaxial semiconductor layer configured to emit colored light in wavelength bands other than visible light, in addition to blue light. For example, the LED 30 can be configured to emit blue, yellow, green, orange, or red light.

[0084] The wavelength conversion unit 50B can be located on an optical path of the LED 30 and can comprise the wavelength conversion material 58 (a near-infrared wavelength conversion material) dispersed in a transparent resin 52. The wavelength conversion material 58 can be configured to emit light in the near-infrared band. The wavelength conversion material 58 can provide light in the near-infrared band using the light from the LED 30 as excitation light. The light in the near-infrared band can have a peak wavelength of 740 nm to 900 nm. The wavelength conversion material 58 can, for example, be Ca(Al)₂. 12-x-y ,Ga y )O 19 :xCr 3+ (0 <x<1, 0<y<6), Lu3Al5O 12 :Ce 3+ ,Cr 3+ , La3MgZrO6:Cr 3+ , LiInSi2O6:Cr 3+ , LiZnSnO:Cr 3+ and ScBO3:Cr 3+or a combination thereof. The wavelength conversion unit 50B may additionally include other wavelength conversion materials according to the desired colored light.

[0085] As described above, it is possible to create a positive biological effect, such as promoting ATP production, by amplifying light in the near-infrared band. Specifically, near-infrared light can be absorbed by cytochrome c oxidase, which is present in cells, to promote the production of ATP, a source of energy in cells.

[0086] Referring to Fig. 11B, it is understood that an LED module 100C according to the present exemplary embodiment corresponds to the one described in Fig. The LED module 100B shown in Figure 11A is similar, except that an additional LED chip (e.g., a near-infrared LED 40) is used instead of a near-infrared wavelength conversion material (e.g., wavelength conversion material 58). Fig. 11A) is used as a near-infrared light source. Regarding a description of the components of the present exemplary embodiment, unless otherwise specified, reference is made to the description of the same or similar components of the LED module 100B, which is used in Fig. 11A is shown, referenced.

[0087] The LED module 100C according to the present exemplary embodiment can, in addition to the other colored LEDs (e.g., LED 30), include a near-infrared LED 40. The near-infrared LED 40 can be configured, as described above, to emit a wavelength in the near-infrared band. Light in the near-infrared band used in the present exemplary embodiment can have a peak wavelength of 740 nm to 900 nm. In the spectrum of the final white light, the peak intensity at 740 nm to 900 nm can be 4.5% or more of the maximum peak in the blue band (e.g., 420 nm to 465 nm) and can be 7% or more in some exemplary embodiments.

[0088] As described above, it is possible to create a positive biological effect, such as promoting the production of ATP, by amplifying light in the near-infrared band.

[0089] The LED module (or lighting device) according to the present exemplary embodiment can be implemented in a form capable of selectively performing a biological function. For example, the first LED light source unit can be provided as a basic light source, for example, of white light, and the second LED light source unit can be provided as an LED module (or lighting device) that is provided as a near-infrared light source to perform a function of promoting ATP production in a specific environment.

[0090] Fig. Figure 12 is a block diagram of an LED lighting device according to an exemplary embodiment of the present disclosure.

[0091] Referring to Fig. 12. An LED lighting device 200 according to the present exemplary embodiment can comprise a driver control unit 220 (e.g., a driver controller), a light source unit 230, and a power supply unit 240. The light source unit 230 or the driver control unit 220 and the light source unit 230 can be configured as a single module.

[0092] A first 230A LED light source can be provided as a basic light source, which, for example, emits white light (e.g., see spectrum W1 in Fig. 8 or spectrum W2 in Fig. 9) provides, and a second LED light source 230B can be formed from an LED that is provided as a near-infrared light source to perform a function to promote ATP production in a specific environment. The LED that forms the second LED light source 230B can provide near-infrared light from 740 nm to 900 nm.

[0093] The power supply unit 240 can supply AC or DC power from the driver control unit 220 to a light source driver unit 225. The driver control unit 220 can comprise the light source driver unit 225 and a driver signal control unit 221, which provides a driver signal for controlling the light source driver unit 225. The light source driver unit 225 can be connected to the power supply unit 240 to receive power and can supply a current, controlled by a driver signal from the driver signal control unit 221, to a first LED light source 230A and a second LED light source 230B of the light source unit 230. In the present exemplary embodiment, the light source driver unit 225 can be controlled with different currents independently of the first LED light source 230A and the second LED light source 230B.

[0094] In some exemplary embodiments, the driver control unit 220 may further include a communication module that transmits and receives data exhibiting color characteristics, such as color temperature, measured inside or outside the LED lighting device 200. The driver control unit 220 may also include a signal processing unit that processes data from an illuminance sensor, a motion sensor, and / or an image sensor in order to send the processed data to or receive it from the LED lighting device 200 or externally.

[0095] According to embodiments, the driver control unit 220 can be implemented as a controller comprising at least one processor and a memory for storing computer instructions. The computer instructions, when executed by at least one processor, can be configured to cause the driver control unit 220 to perform any number of its functions described herein.

[0096] Referring to Fig. 13-15 In the present exemplary embodiment, the first LED light source 230A can comprise a white LED (e.g., an LED source 100') and a near-infrared LED (e.g., an LED light source 200') according to embodiments of the present disclosure, and in a specific environment or by selection by a user, the applied current of the near-infrared LED can be suitably adjusted to adapt a biological function by the light source driver unit 225.

[0097] Fig. 13 and Fig. Figure 14 are perspective and side cross-sectional views of a light-emitting LED module (or a lighting device) according to an exemplary embodiment of the present disclosure. Fig. Figure 15 is a side cross-sectional view showing an example of a 100' LED light source and a second 200' LED light source in the LED light-emitting module (a lighting device) made of Fig. 13 can be used.

[0098] Referring to Fig. 13 and Fig. 14. According to an exemplary embodiment of the present disclosure, a light source module 1000 can comprise a substrate (e.g., a circuit board 1100), a first LED light source 100' and a second LED light source 200' mounted on the circuit board 1100, a dam 1200 surrounding the first LED light source 100' and the second LED light source 200', an encapsulation unit 1300 covering the first LED light source 100' and the second LED light source 200', and a driver control chip 1400. Both the first LED light source 100' and the second LED light source 200' can comprise a plurality of first and second white light-emitting devices, as previously described in exemplary embodiments. Furthermore, the Fig. The driver control unit 220 shown in section 12 is implemented as a driver control chip 1400.

[0099] The circuit board 1100 can comprise a conductive and an insulating material, and a metal pattern 1155, connected to the first LED light source 100' and the second LED light source 200', and a terminal unit 1150, connected to a metal pattern 1155, can be arranged on a top surface of the same.

[0100] The circuit board 1100, for example, can be an FR4-type printed circuit board (PCB) and can comprise an organic resin containing epoxy, triazine, silicone, polyimide, and the like, or a ceramic such as SiN, AlN, Al2O3, or the like, or a metal and a metal compound. The circuit board 1100 can also comprise a PCB, MCPCB, MPCB, FPCB, CCL, MCCL, or the like.

[0101] The metal pattern 1155 can be electrically connected to the first LED light source 100' and the second LED light source 200' and can be connected to an external power source via the connection unit 1150, so that an electrical signal is applied to the first LED light source 100' and the second LED light source 200'. The metal pattern 1155 and the connection unit 1150 can be in the form of a conductive thin film and can, for example, be made of copper foil.

[0102] Each of the majority of the first LED light source (100') and the second LED light source (200') can be located on board 1100. The first LED light source (100') and the second LED light source (200') can each contain an LED chip (e.g., a blue LED chip 30'). Fig. 15) comprising a semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type, and an active layer positioned between them. The first LED light source 100' can be provided as a basic light source, for example, of white light, and the second LED light source 200' can be formed from an LED that is provided as a near-infrared light source to perform a function to promote ATP production in a specific environment. The LED that forms the second LED light source 200' can provide near-infrared light from 740 nm to 900 nm. The first LED light source 100' and the second LED light source 200' are in Fig. 15 shown.

[0103] Referring to Fig. Figure 15 shows that the first LED light source 100' used in the present exemplary embodiment has a chip-scale package form, and the second LED light source 200' is shown as a near-infrared LED chip. The near-infrared LED chip can also be implemented as a GaAs-based semiconductor epitaxy.

[0104] Referring to Fig. 15 The plurality of the first LED light sources 100' according to the present exemplary embodiment can comprise a blue LED chip 30' emitting blue light, a first electrode 150a and a second electrode 150b located on a lower surface of the blue LED chip 30', a reflective layer 160 surrounding a side surface of the blue LED chip 30', and a wavelength conversion unit 170 located on an upper surface of the blue LED chip 30'.

[0105] The first electrode 150a and the second electrode 150b can be made of a conductive material and can be electrically connected to a first electrode pattern 1120a and a second electrode pattern 1120b of the circuit board 1100 by a first sphere Sa and a second sphere Sb, respectively. The reflective layer 160 can reflect light emitted by the blue LED chip 30' onto the side surface so that it is directed upwards. The reflective layer 160 can comprise a light-reflecting material and can, for example, include a white powder such as SiO2, TiO2, or Al2O3. The wavelength conversion unit 170 can comprise a first and a second wavelength conversion material for converting a portion of the blue light emitted by the blue LED chip 30' into a different wavelength.

[0106] The second 200' LED light source can comprise a plurality of 40' near-infrared LED chips configured to emit light with different peak wavelengths in the near-infrared range of 740 nm to 900 nm. For example, the plurality of 40' near-infrared LED chips can, taking into account the in Fig. The ATP action spectrum shown in Figure 4 comprises a first LED chip with a peak wavelength of 620 nm to 720 nm and a second LED chip with a peak wavelength of 720 nm to 900 nm.

[0107] The dam 1200 can be arranged to surround the first LED light source 100' and the second LED light source 200' on the circuit board 1100, defining an internal light-emitting region. The dam 1200 can be arranged to protrude above the upper surface of the circuit board 1100 and can have a ring shape. However, in the present exemplary embodiment, the shapes of the circuit board 1100 and the dam 1200 are not limited to a rectangular and a circular shape, respectively, and the arrangement of the first LED light source 100' and the second LED light source 200' can be modified accordingly. Furthermore, in some exemplary embodiments, the dam 1200 can also be omitted.

[0108] The encapsulation unit 1300 can fill the interior of the space divided by the dam 1200 and can cover the first LED light source 100' and the second LED light source 200'. The encapsulation unit 1300 can be dome-shaped, convex upwards, to adjust the directional angle of externally emitted light; however, it is not limited to this. The encapsulation unit 1300 can be made of a light-transmitting material so that light generated by the first LED light source 100' and the second LED light source 200' can be emitted externally. A resin, such as silicone, epoxy, or the like, can be used as a light-transmitting material. The encapsulation unit 1300 can be formed by spraying a resin onto the circuit board 1100 and curing it by heating, irradiation with light or elapsed time.In some exemplary embodiments, the encapsulation unit 1300 can include a light-reflecting material to scatter externally emitted light. For example, a white powder such as SiO2, TiO2, or Al2O3 can be used as the light-reflecting material. However, in some exemplary embodiments, the encapsulation unit 1300 can also be omitted, and the first LED light source 100' and the second LED light source 200' can each also include a lens.

[0109] Fig. Figure 16 is a side cross-sectional view showing a first and a second LED package that can be used in the LED light-emitting module according to an exemplary embodiment of the present disclosure.

[0110] An LED light-emitting module according to the present exemplary embodiment can comprise a first 100W LED package configured to emit white light and a second 100B' LED package configured to emit light with a peak wavelength of 740 nm to 900 nm. For example, in the light source module 1000 according to the present exemplary embodiment, the first 100' LED light source can be replaced by the first 100W LED package, and the second 200' LED light source can be replaced by the second 100B' LED package.

[0111] The first 100W LED package can be understood as a light source in which a wavelength conversion material 58 is used for near-infrared light from the in Fig. The LED module 100 shown is omitted. For a detailed description of each component of the first 100W LED package, please refer to the description in Fig. The LED module shown in section 100 can be consulted.

[0112] The first 100W LED package used in the present exemplary embodiment can comprise a first (i.e., blue light) emitting diode (e.g., LED 30) mounted on a package substrate 10 and configured to emit blue light with a peak wavelength of 420 nm to 465 nm, and a wavelength conversion unit 50' comprising a first wavelength conversion material 54 and a second wavelength conversion material 56, which is excited by the blue light to convert it, respectively, into green and red light. The unconverted blue light and the converted green and red light can be combined to emit a final white light. In some exemplary embodiments, the wavelength conversion material introduced into the wavelength conversion unit 50' can be one wavelength conversion material (e.g., yellow) or three or more wavelength conversion materials (e.g.,an added orange wavelength conversion material).

[0113] The second LED package 100B' can be understood as a light source which further includes a wavelength selection filter unit 60 (e.g., a wavelength selection filter) in the Fig. The LED module 100B shown in Figure 11A is included. For a detailed description of each component of the second LED package 100B, see the detailed description in Figure 11A. Fig. The LED module 100B shown in 11A should be consulted.

[0114] The second LED package 100B' used in this embodiment can comprise a second LED (e.g., a blue LED chip 30') mounted on the package substrate 10 and configured to emit light of a specific wavelength, a wavelength conversion unit 50B with a near-infrared wavelength conversion material (e.g., the wavelength conversion material 58) excited by light of a specific wavelength and emitting near-infrared light with a peak wavelength of 740 nm to 900 nm, and a wavelength selection filter unit 60 located on the wavelength conversion unit 50B.

[0115] The second LED can be a blue light-emitting diode configured to emit blue light with a peak wavelength of 420 nm to 465 nm. In some exemplary embodiments, the second LED can be the same blue light-emitting diode as the LED 30 of the first 100W LED package. The wavelength selection filter unit 60 can be configured to block the unconverted specific light (e.g., blue light) and transmit the near-infrared light. For example, the wavelength selection filter unit 60 can have a structure in which two types of dielectric layers with different refractive indices are stacked alternately.

[0116] The wavelength conversion material 58 can Ca(Al 12-x-y ,Ga y )O 19 :xCr 3+(0≤x≤1, 0≤y≤6). It is not limited to this and the wavelength conversion material 58 may comprise at least one phosphor consisting of a group consisting of Lu3Al5O 12 :Ce 3+ ,Cr 3+ , La3MgZrO6:Cr 3+ , LiInSi2O6:Cr 3+ , LiZnSnO:Cr 3+ and ScBO3:Cr 3+ is selected.

[0117] In some exemplary embodiments, the second LED package 100B' can be used as a functional light source to promote ATP production. The second LED package 100B' may not be combined with an LED light source that emits basic illumination light (e.g., a white light LED module or a colored light LED module, such as the first LED package 100W) and can be used alone and provided as a near-ultraviolet light LED module.

[0118] Fig. Figure 17 is a perspective view schematically showing a flat panel lighting device according to an exemplary embodiment of the present disclosure, and Fig. Figure 18 is a perspective exploded view showing a light bulb type lighting device according to an exemplary embodiment of the present disclosure.

[0119] Referring to Fig. 17. A flat lighting device 4100 can comprise a light source module 4110, a power supply device 4120, and a housing 4130. The power supply device 4120 can include a driver control unit (e.g., a driver control unit 220). Fig. 12) include.

[0120] The light source module 4110 can comprise a light source array and can be configured to achieve an overall flat shape. The light source(s) that form the light source module 4110 can be configured, for example, as shown in Fig. 1, Fig. 10, Fig. 11A and Fig. 11B and Fig. to include the 16 LED modules shown, or the light source module 4110 can be used with the one shown in Fig. The 13 light source module 1000 shown (e.g. LED module) must be implemented.

[0121] The power supply device 4120 can be configured to supply power to the light source module 4110. The housing 4130 can have a receiving space configured to accommodate the light source module 4110 and the power supply device 4120, and can be in a hexahedral shape open on one side; however, it is not limited to this. The light source module 4110 can be arranged to emit light through an open side of the housing 4130. Unlike the present exemplary embodiment, at least one section of phosphors of the wavelength conversion materials used in the white light-emitting device can be located on other components (e.g., a light guide plate, a diffusion plate, and a lens) of the flat illumination device 4100 adjacent to the white light-emitting device.

[0122] Fig. Figure 18 is a perspective exploded view showing a light bulb type lighting device according to an exemplary embodiment of the present disclosure.

[0123] Referring to Fig. 18 A lighting device 4300 of the bulb type can comprise a base 4210, a power supply unit 4220, a heat dissipation unit 4230, a light source module 4240 and an optical unit 4330.

[0124] The socket 4210 can be configured to be interchangeable with an existing lighting device. Power supplied to the incandescent-type lighting device 4300 can be applied through the socket 4210. As shown, the power supply unit 4220 can be separated and assembled into a first power supply unit 4221 and a second power supply unit 4222. The heat dissipation unit 4230 can comprise an internal heat dissipation unit 4231 and an external heat dissipation unit 4232, and the internal heat dissipation unit 4231 can be directly connected to the light source module 4240 and / or the power supply unit 4220, thereby transferring heat to the external heat dissipation unit 4232. The optical unit 4330 can be lens-shaped and can be configured to distribute light emitted by the light source module 4240 uniformly.

[0125] The light source module 4240 can receive power from the power supply unit 4220 and emit light to the cover unit 4330. The light source module 4240 can comprise one or more light sources 4241, a circuit board 4242, and a controller 4243, and the controller 4243 can store driver information for the one or more light sources 4241. The one or more light sources 4241 that constitute the light source module 4240 can be configured, for example, as shown in Fig. 1, Fig. 10, Fig. 11A and Fig. 11B and Fig. The 16 LED modules shown, or the 4240 light source module, can be combined with the one shown in Fig. The 13 light source module 1000 shown (e.g. LED module) must be implemented.

[0126] In the lighting device 4300 of the bulb type according to the present embodiment, a reflective unit 4310 can be included above the light source module 4240, and the reflective unit 4310 can reduce glare by spreading light from the light source module 4240 uniformly to the side and rear.

[0127] A communication module 4320 can be mounted above the reflective unit 4310, and home network communication can be implemented through the communication module 4320. The communication module 4320 can, for example, be a wireless communication module using Zigbee®, Wi-Fi, or Li-Fi, and can control the switching on / off of a lighting device via a smartphone or wireless controller, and can control lights installed both inside and outside the home, such as switching a lighting device on / off and controlling its brightness via a smartphone or wireless controller.Furthermore, the Li-Fi communication module, which utilizes the visible wavelength of light from the lighting device installed both indoors and outdoors, can be used to control electronic products and vehicle systems both inside and outside the home, such as televisions, refrigerators, air conditioners, door locks, and passenger cars. The reflective unit 4310 and the communication module 4320 can be covered by the optical unit 4330, which can be lens-shaped.

[0128] As disclosed above, according to an exemplary embodiment of the present disclosure, by combining a near-infrared light source having an ATP action spectrum (e.g. a peak wavelength of 740 nm to 900 nm) with a basic illumination light source (e.g. white or colored illumination light) an LED module and a lighting device with a biological energy enhancement function can be provided.

Claims

Light-emitting diode module, LED module configured to emit white light, the LED module comprising: a blue light-emitting diode (30) configured to emit blue light with a first peak wavelength in a range of 420 nm to 465 nm; at least one wavelength conversion material (54, 56) configured to convert some of the blue light into converted light of another wavelength;and a near-infrared wavelength conversion material (58) configured to be excited by the blue light of the blue light-emitting diode (30) to emit additional light with a second peak wavelength in the range of 740 nm to 900 nm and a full width at half maximum (FWHM) of 120 nm or less, wherein the near-infrared wavelength conversion material (58) comprises Ca(Al12-xy,Gay)O19:xCr3+(0≤x≤1, 0≤y≤6), wherein the converted light, another part of the blue light, and the additional light combine to form the white light, and wherein a spectrum of the white light thus formed has a peak intensity in the range of 740 nm to 900 nm, and the peak intensity is greater than or equal to 4.5% of a peak intensity in a blue band from 420 nm to 465 nm is.; LED module according to claim 1, wherein the near-infrared wavelength conversion material (58) further comprises at least one phosphor selected from a group consisting of Lu3Al5O12:Ce3+, Cr3+, La3MgZrO6:Cr3+, LiInSi2O6:Cr3+, LiZnSnO:Cr3+ and ScBO3:Cr3+. LED module according to claim 1 or 2, wherein there is at least one valley in a spectrum of white light between a peak wavelength in the range of 740 nm to 900 nm and an adjacent peak wavelength in a wavelength band for visible light. LED module according to one of claims 1 to 3, wherein the white light has a color rendering index (CRI) of 70 or more. LED module according to one of claims 1 to 4, wherein the white light has a color temperature (CCT) in a range of 1800 to 6500 K. LED module according to one of claims 1 to 5, wherein the at least one wavelength conversion material (54, 56) comprises a first wavelength conversion material (54) configured to be excited by the blue light to emit a first light with a peak wavelength in a range of 520 nm to 560 nm, and a second wavelength conversion material (56) configured to be excited by the blue light to emit a second light with a peak wavelength in a range of 600 nm to 650 nm. LED module according to claim 6, wherein the first wavelength conversion material (54) and the second wavelength conversion material (56) comprise a phosphor and / or a quantum dot. LED module according to claim 7, wherein the first wavelength conversion material comprises at least one phosphor from a group consisting of (Ga,Gd,Y,Lu)3Al5O12:Ce3+, La3Si6N11:Ce3+, (Sr,Ca,Ba)Si2O2N2:Eu2+, (Sr,Ba)2SiO4:Eu2+ and β-SiAlON:Eu2+. LED module according to claim 7 or 8, wherein the second wavelength conversion material (56) comprises at least one phosphor from a group consisting of (Sr,Ca)AlSiN3:Eu2+, CaAlSiN3:Eu2+ and KxSiFy:Mn4+ (2≤x≤3, 4≤y≤7).

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