Semiconductor device

Abstract

Semiconductor device that is connectable to semiconductor devices arranged on laterally opposite sides thereof, the semiconductor device comprising: a semiconductor element to allow a current to flow from a source to a drain when a signal is input from a gate; a sealing resin (2) to seal the semiconductor element, wherein the sealing resin is rectangular in a top view; a gate terminal (3) which is electrically connected to the gate and protrudes in a top view from a first side of the sealing resin (2); a drain connection (4) which is electrically connected to the drain and protrudes in a top view from the first side of the sealing resin (2); a source connection (5) which is electrically connected to the source and protrudes in a top view from the first side of the sealing resin (2); a first heat dissipation plate (6, 16, 26) which is electrically connected to the drain and projects in a top view from a second side which overlaps with the first side of the sealing resin (2); and a second heat dissipation plate (7, 17, 27) which is electrically connected to the drain and protrudes in a top view from a third side opposite the second side of the sealing resin (2); where at least one height position of a lower surface of a distant end part of the first heat dissipation plate (6, 16, 26) and a height position of an upper surface of a near end part of the second heat dissipation plate (7, 17, 27) or a height position of a lower surface of a distant end part of the second heat dissipation plate (7, 17, 27) and a height position of an upper surface of a near end part of the first heat dissipation plate (6, 16, 26) are equal.

Description

Background of the invention; Field of the invention

[0001] The present invention relates to semiconductor devices. Description of the state of the art

[0002] When multiple semiconductor devices are connected in parallel, their drain terminals are only connected by substrate structures. This creates differences in parasitic resistance and inductance among the substrate structures, leading to current imbalances. Furthermore, the semiconductor devices are connected to a heat sink via insulating films, resulting in poor thermal contact. Therefore, if the semiconductor devices have varying temperatures, these temperature differences are less likely to be eliminated.

[0003] One method to address these problems is a method of connecting heat dissipation plates projecting from laterally opposite sides of each molded resin when the majority of semiconductor devices are connected in parallel, in order to prevent a current and thermal imbalance among the semiconductor devices.

[0004] For example, the Japanese utility model application JP S56-43170U discloses a structure of a semiconductor device in which heat dissipation plates projecting from laterally opposite sides of a molded resin have screw holes.

[0005] The technology disclosed in the published Japanese utility model application JP S56-43 170 U, however, does not provide for connecting multiple semiconductor devices in parallel. Furthermore, the heat dissipation plates must be stacked vertically to connect the semiconductor devices in parallel. The semiconductor devices cannot be properly secured because they are raised from mounting positions, and current and thermal imbalances among the semiconductor devices cannot be prevented.

[0006] German patent application DE 11 2016 007 419 B4 relates to a semiconductor module comprising a conductor frame and a semiconductor element connected to the conductor frame, wherein the conductor frame has a first connection structure and a second connection structure, wherein the first connection structure is arranged on a first side of the conductor frame, the second connection structure is arranged on a second side of the conductor frame opposite the first side, the first connection structure has a gap section as a part where the conductor frame is not present, the second connection structure has a gap section as a part where the conductor frame is not present, each of the first connection structure and the second connection structure has a shape such that one of the first connection structure and the second connection structure completes at least a part of the gap section of the other, assuming thatthat the first interconnection structure and the second interconnection structure overlap, the first interconnection structure has a concave portion recessed in a direction perpendicular to a main surface of the conductor frame, the second interconnection structure has a convex portion projecting in a direction perpendicular to the main surface of the conductor frame, the convex portion and the concave portion are joined together, assuming that the first interconnection structure and the second interconnection structure overlap, and wherein the convex portion is thicker at its head than at its base and the concave portion is wider inside than at its entrance, such that the first interconnection structure and the second interconnection structure of respective adjacent semiconductor modules can be electrically connected to each other by joining without the use of an additional interconnecting component. Summary

[0007] It is an object of the present invention to provide a technology that enables the suppression of current and thermal imbalance when a plurality of semiconductor devices are connected in parallel.

[0008] The problem underlying the invention is solved according to the invention in a semiconductor device by the features of claim 1. Advantageous further developments are the subject of the respective dependent claims.

[0009] A semiconductor device according to the present invention is a semiconductor device that can be connected to semiconductor devices arranged on laterally opposite sides thereof. The semiconductor device comprises a semiconductor element, a sealing resin, a gate terminal, a drain terminal, a source terminal, a first heat dissipation plate, and a second heat dissipation plate. The semiconductor element allows a current to flow from a source to a drain when a signal is input from a gate. The sealing resin is rectangular in plan view and seals the semiconductor element. The gate terminal is electrically connected to the gate and protrudes from a first side of the sealing resin in plan view. The drain terminal is electrically connected to the drain and protrudes from a first side of the sealing resin in plan view.The source connection is electrically connected to the source and protrudes from the first side of the sealing resin in a plan view. The first heat dissipation plate is electrically connected to the drain and protrudes from a second side that overlaps with the first side of the sealing resin in a plan view. The second heat dissipation plate is electrically connected to the drain and protrudes from a third side that is opposite the second side of the sealing resin in a plan view. At least one height position of a lower surface of a far end portion of the first heat dissipation plate and one height position of an upper surface of a near end portion of the second heat dissipation plate, or one height position of a lower surface of a far end portion of the second heat dissipation plate and one height position of an upper surface of a near end portion of the first heat dissipation plate, are equal.

[0010] When multiple semiconductor devices are connected in parallel, the first and second heat dissipation plates of the semiconductor device can be connected on one of their laterally opposite sides so that they adhere to each other, and the second and first heat dissipation plates of the semiconductor device on the other of their laterally opposite sides can be connected so that they adhere to each other without lifting the semiconductor devices from their mounting positions. This prevents current and thermal imbalances that occur when multiple semiconductor devices are connected in parallel.

[0011] These and other tasks, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when viewed in conjunction with the accompanying drawings. Brief description of the drawings Fig. 1A and Fig. Figure 1B represents a top view and a side view of a semiconductor device according to embodiment 1; Fig. 2A and Fig. 2B are each a top view and a side view of semiconductor devices according to embodiment 1, which are connected in parallel; Fig. Figure 3 is a top view of semiconductor devices according to embodiment 2 in front of a frame saw; Fig. 4A and Fig. Figures 4B are a top view and a side view of a semiconductor device according to embodiment 2 after frame sawing; Fig. 5A and Fig. Figures 5B are each a top view and a side view of the semiconductor device according to embodiment 2 after a mold; Fig. 6A and Fig. Figure 6B represents a top view and a side view of the semiconductor devices according to embodiment 2, which are combined in parallel; Fig. 7A and Fig. Figure 7B shows a top view and a side view of the semiconductor devices according to embodiment 2, which are connected in parallel; Fig. Figure 8 is a top view of semiconductor devices according to embodiment 3 in front of a frame saw; Fig. 9A and Fig. Figures 9B are each a top view and a side view of a semiconductor device according to embodiment 3 after frame sawing; Fig. 10A and Fig. Figures 10B are each a top view and a side view of the semiconductor device according to embodiment 3 after a mold; Fig. 11A and Fig. Figure 11B represents a top view and a side view of the semiconductor devices according to embodiment 3, which are combined in parallel; and Fig. 12A and Fig. Figure 12B shows a top view and a side view of the semiconductor devices according to embodiment 3, which are connected in parallel. Description of preferred embodiments<Ausführungsform 1>

[0012] One embodiment 1 is described below with reference to the drawings. Fig. Figure 1A is a top view of a semiconductor device 1 according to embodiment 1, and Fig. Figure 1B is a side view of semiconductor device 1. Fig. 2A is a top view of the semiconductor devices 1 according to embodiment 1, which are connected in parallel, and Fig. Figure 2B is a side view of the semiconductor devices 1 connected in parallel.

[0013] As in Fig. 1A and Fig. As shown in Figure 1B, the semiconductor device 1 is a switching device and comprises a semiconductor element (not shown), a sealing resin 2, a gate terminal 3, a drain terminal 4, a source terminal 5, a heat dissipation plate 6 as a first heat dissipation plate and a heat dissipation plate 7 as a second heat dissipation plate.

[0014] The semiconductor element is a semiconductor switching element that allows current to flow from a source to a drain when a signal is input from a gate. The sealing resin 2 is rectangular in a top view and seals the semiconductor element.

[0015] Gate terminal 3 is electrically connected to the gate of the semiconductor element and protrudes from the sealing resin 2 in a top view from one side. Drain terminal 4 is electrically connected to the drain of the semiconductor element and protrudes from the sealing resin 2 in a top view. Source terminal 5 is electrically connected to the source of the semiconductor element and protrudes from the sealing resin 2 in a top view.

[0016] As in Fig. 2A and Fig. As shown in Figure 2B, the heat dissipation plates 6 and 7 are connected to a heat sink 8 by an insulating film 9 and transfer heat generated by the semiconductor element to the heat sink 8. As shown in Fig. 1A and Fig. As shown in Figure 1B, the heat dissipation plate 6 is electrically connected to the drain of the semiconductor element and, in a top view, protrudes from a second side that overlaps with the first side of the sealing resin 2. The heat dissipation plate 7 is electrically connected to the drain of the semiconductor element and, in a top view, protrudes from a third side that is opposite the second side of the sealing resin 2. The first side here is a lower side of the sealing resin 2. Fig. 1A. The second side is a left side of the sealing resin 2 in Fig. 1A, and the third side is a right side of the sealing resin 2 in Fig. 1A.

[0017] The heat dissipation plate 6 is L-shaped in a side view, formed by bending a plate-like part, which is made, for example, of copper. A near end part of the heat dissipation plate 6 protrudes from the sealing resin 2 and extends upwards. A far end part of the heat dissipation plate 6 forms a first flat part, which is provided by a part that is in Fig. 1A and Fig. 1B is bent to the left from the near end part and extends to the left. The far end part of the heat dissipation plate 6 has a through-hole 6a extending from an upper surface to a lower surface.

[0018] The heat dissipation plate 7 is formed from a plate-like part, which is made, for example, of copper. The heat dissipation plate 7 extends in Fig. 1A and Fig. 1B to the right, and the heat dissipation plate 7 as a whole forms a second flat part. A distant end part of the heat dissipation plate 7 has a through-hole 7a extending from an upper surface to a lower surface. A near end part of the heat dissipation plate 7 is here a part of the heat dissipation plate 7 to the left of the through-hole 7a in Fig. 1A and Fig. 1B.

[0019] As in Fig. 2A and Fig. As shown in Figure 2B, screws 10 are inserted into the through holes 6a and 7a to connect the semiconductor device 1 and semiconductor devices 1 arranged parallel on laterally opposite sides thereof. A lateral direction is a left-right direction in Fig. 2A and Fig. 2B, and the same applies to the other drawings.

[0020] As in Fig. As shown in Figure 1B, the heat dissipation plate 6 and the heat dissipation plate 7 protrude from the same height position of the sealing resin 2. The heat dissipation plate 6 has a step s between a lower surface of the far end part and a lower surface of the near end part, and the height position of the lower surface of the far end part of the heat dissipation plate 6 and the height position of an upper surface of the near end part of the heat dissipation plate 7 are the same.

[0021] If the majority of semiconductor devices 1 are connected in parallel above an upper surface of the heat sink 8 through the insulating film 9, as in Fig. 2A and Fig. As shown in Figure 2B, in semiconductor device 1, which is different from semiconductor device 1 at the left end and semiconductor device 1 at the right end, the lower surface of the far end portion of the heat dissipation plate 6 of semiconductor device 1 adheres to the upper surface of the heat dissipation plate 7 of semiconductor device 1 on one of the laterally opposite sides (a left side), and the upper surface of the heat dissipation plate 7 of semiconductor device 1 adheres to the lower surface of the far end portion of the heat dissipation plate 6 of semiconductor device 1 on the other of the laterally opposite sides (a right side). The through-hole 6a of heat dissipation plate 6 and the through-hole 7a of heat dissipation plate 7 are connected in such a state that heat dissipation plate 6 and heat dissipation plate 7 adhere to each other.

[0022] In the semiconductor device 1, a spacer 11a is arranged at the left end on the lower surface of the far end portion of the heat dissipation plate 6 to eliminate the step s of the heat dissipation plate 6, that is, a gap between the far end portion of the heat dissipation plate 6 and the insulating film 9. The spacer 11a is fastened to the heat dissipation plate 6 by a screw 10. At the right end of the semiconductor device 1, the spacer 11a is arranged on the upper surface of the heat dissipation plate 7 to ensure that the height position of the screw 10 used for the heat dissipation plate 7 of the semiconductor device 1 aligns with the height positions of the other screws 10. The spacer 11a is fastened to the heat dissipation plate 7 by the screw 10.To insulate the screw 10 and the heat sink 8, the screw 10 is inserted into the through hole 6a of the heat dissipation plate 6, the through hole 7a of the heat dissipation plate 7 and a through hole (not shown) of the spacer 11a through a spacer 11b.

[0023] Since the height position of the lower surface of the far end part of the heat dissipation plate 6 and the height position of the upper surface of the near end part of the heat dissipation plate 7 are the same, as described above, the heat dissipation plate 6 and the heat dissipation plate 7 of the semiconductor device 1 can be connected on one of the laterally opposite sides (the left side) so that they adhere to each other, and the heat dissipation plate 7 and the heat dissipation plate 6 of the semiconductor device 1 can be connected on the other of the laterally opposite sides (the right side) so that they adhere to each other, without lifting the semiconductor devices 1 from mounting positions.

[0024] A state in which the height position of the lower surface of the far end part of the heat dissipation plate 6 and the height position of the upper surface of the near end part of the heat dissipation plate 7 are the same includes not only a state in which they are exactly the same, but also a state in which they are slightly different due to a manufacturing defect and the like.

[0025] As described above, the semiconductor device 1 according to embodiment 1 is the semiconductor device 1 which is connectable to the semiconductor devices 1 which are arranged on laterally opposite sides thereof, and comprises: the semiconductor element to allow a current to flow from the source to the drain upon input of the signal from the gate; the sealing resin 2, which is rectangular in plan view and serves to seal the semiconductor element; the gate terminal 3, which is electrically connected to the gate and protrudes in plan view from the first side of the sealing resin 2; the drain terminal 4, which is electrically connected to the drain and protrudes in plan view from the first side of the sealing resin 2; the source terminal 5, which is electrically connected to the source and protrudes in plan view from the first side of the sealing resin 2;The heat dissipation plate 6, which is electrically connected to the drain and projects in a plan view from the second side, intersecting the first side of the sealing resin 2; and the heat dissipation plate 7, which is electrically connected to the drain and projects in a plan view from the third side, opposite the second side. At least the height position of the lower surface of the far end portion of the heat dissipation plate 6 and the height position of the upper surface of the near end portion of the heat dissipation plate 7, or the height position of the lower surface of the far end portion of the heat dissipation plate 7 and the height position of the upper surface of the near end portion of the heat dissipation plate 6, are equal.

[0026] In particular, the heat dissipation plate 6 and the heat dissipation plate 7 protrude from the same height position of the sealing resin 2, the far end part of the heat dissipation plate 6 has the first flat part, the near end part of the heat dissipation plate 7 has the second flat part, the first flat part is provided by the part that is bent laterally from the near end part of the heat dissipation plate 6, which protrudes from the sealing resin 2 and extends upwards, and the height position of the lower surface of the first flat part and the height position of the upper surface of the second flat part are the same.

[0027] Thus, when the majority of semiconductor devices 1 are connected in parallel, the heat dissipation plate 6 and the heat dissipation plate 7 of the semiconductor device 1 can be connected on one of the laterally opposite sides (the left side) so that they adhere to each other, and the heat dissipation plate 7 and the heat dissipation plate 6 of the semiconductor device 1 on the other of the laterally opposite sides (the right side) can be connected so that they adhere to each other without lifting the semiconductor devices 1 from their mounting positions. A current and thermal imbalance that would otherwise occur if the semiconductor devices 1 were connected in parallel can thereby be prevented.

[0028] Since the heat dissipation plate 6 and the heat dissipation plate 7 protrude from the same height position of the sealing resin 2, the semiconductor device 1 can be manufactured more easily compared to a case in which they protrude from different height positions.

[0029] The far end of heat dissipation plate 6 and the far end of heat dissipation plate 7 each have the through-hole 6a and the through-hole 7a, respectively, which extend from the upper surface to the lower surface. Heat dissipation plate 6 and heat dissipation plate 7 can therefore be easily connected by screw 10.

[0030] Although the heat dissipation plate 6 has a step s due to its curvature in embodiment 1, the heat dissipation plate 6 and the heat dissipation plate 7 can protrude from different height positions of the sealing resin 2, so that they have the step between the lower surface of the heat dissipation plate 6 and the upper surface of the heat dissipation plate 7.

[0031] Heat dissipation plate 6 and heat dissipation plate 7 do not necessarily each need to have the through-hole 6a and the through-hole 7a, as long as heat dissipation plate 6 and heat dissipation plate 7 can be joined. In this case, heat dissipation plate 6 and heat dissipation plate 7 can be joined by soldering, pressure welding, or the like. <Ausführungsform 2>

[0032] A semiconductor device 1A according to embodiment 2 is described next. Fig. Figure 3 is a top view of semiconductor devices 1A according to embodiment 2 in front of a frame saw. Fig. 4A is a top view of the semiconductor device 1A according to embodiment 2 after a frame sawing, and Fig. Figure 4B is a side view of the semiconductor device 1A after frame sawing. Fig. Figure 5A is a top view of the semiconductor device 1A according to embodiment 2 after shaping, and Fig. Figure 5B is a side view of the semiconductor device 1A according to embodiment 2 after shaping. Fig. Figure 6A is a top view of the semiconductor devices 1A according to embodiment 2, which are combined in parallel, and Fig. Figure 6B is a side view of the semiconductor devices 1A according to embodiment 2, which are combined in parallel. Fig. Figure 7A is a top view of the semiconductor devices 1A according to embodiment 2, which are connected in parallel, and Fig. Figure 7B is a side view of the semiconductor devices 1A, which are connected in parallel. The heat sink is in Fig. 7A and Fig. 7B not shown. In embodiment 2, the same components as those described in embodiment 1 bear the same reference numerals as those of the components described in embodiment 1, and a description thereof is omitted.

[0033] As in Fig. 5A and Fig. As shown in Figure 5B, in embodiment 2 the semiconductor device 1A has a heat dissipation plate 16 as the first heat dissipation plate and a heat dissipation plate 17 as the second heat dissipation plate instead of the heat dissipation plate 6 and the heat dissipation plate 7.

[0034] The heat dissipation plate 16 and the heat dissipation plate 17 are each L-shaped, such that in a top view they have a near end and a far end that is narrower than the near end. The heat dissipation plate 16 and the heat dissipation plate 17 each have a step that projects upwards by bending a plate-like part, for example made of copper, and project from the same height position as the sealing resin 2.

[0035] The heat dissipation plate 16 has a first flat part 16a, a first anchor part 16b, and a recess 16c. The first flat part 16a is formed in a portion of the heat dissipation plate 16 excluding the far end part, that is, a portion of the heat dissipation plate 16 including the near end part. The first anchor part 16b is formed in the far end part of the heat dissipation plate 16 and is located above the first flat part 16a by means of the step. An inner circumference of the first flat part 16a has a recess 16c that extends from an upper surface to a lower surface and is semicircular in a plan view. The near end part of the heat dissipation plate 16 is, here, a portion of the heat dissipation plate 16 to the right of the recess 16c. Fig. 5A and Fig. 5C.

[0036] The heat dissipation plate 17 has a second planar part 17a, a second anchor part 17b, and a recess 17c. The second planar part 17a is formed in a portion of the heat dissipation plate 17 excluding the far end part, that is, a portion of the heat dissipation plate 17 that includes the near end part. The second anchor part 17b is formed in the far end part of the heat dissipation plate 17 and is located above the second planar part 17a by a step. An inner circumference of the second planar part 17a has the recess 17c, which extends from an upper surface to a lower surface and is semicircular in a plan view. The near end part of the heat dissipation plate 17 is, here, a portion of the heat dissipation plate 17 to the left of the recess 17c. Fig. 5A and Fig. 5B.

[0037] In a top view, the heat dissipation plate 16 and the heat dissipation plate 17 exhibit point symmetry over the sealing resin 2. Furthermore, the height position of a lower surface of the first anchor part 16b of the heat dissipation plate 16 and the height position of an upper surface of the second flat part 17a of the heat dissipation plate 17 are the same, and the height position of a lower surface of the second anchor part 17b of the heat dissipation plate 17 and the height position of an upper surface of the first flat part 16a of the heat dissipation plate 16 are the same.

[0038] Thus, as in Fig. 6A and Fig. Figure 6B shows that the first armature part 16b of the heat dissipation plate 16 can be engaged with the second flat part 17a of the heat dissipation plate 17 of the semiconductor device 1A on one of the laterally opposite sides (the left side), and the second armature part 17b of the heat dissipation plate 17 can be engaged with the first flat part 16a of the heat dissipation plate 16 of the semiconductor device 1A on the other of the laterally opposite sides (the right side).

[0039] A state in which the height position of the lower surface of the first anchor part 16b of the heat dissipation plate 16 and the height position of the upper surface of the second flat part 17a of the heat dissipation plate 17 are the same, and the height position of the lower surface of the second anchor part 17b of the heat dissipation plate 17 and the height position of the upper surface of the first flat part 16a of the heat dissipation plate 16 are the same, includes not only a state in which they are exactly the same, but also a state in which they are slightly different due to a manufacturing defect and the like.

[0040] A procedure for forming the heat dissipation plate 16 and the heat dissipation plate 17 and a procedure for connecting the semiconductor devices 1A are described next. As in Fig. As shown in Figure 3, the majority of semiconductor devices 1A are configured such that they are integrated in parallel in front of a frame saw. The heat dissipation plates 16 and 17 are configured such that they are integrated by adjacent semiconductor devices 1A. In this case, the heat dissipation plate 16 of semiconductor device 1A is integrated at the left end and the heat dissipation plate 17 of semiconductor device 1A is integrated at the right end. Fig. 3 integrated, whereby unnecessary parts 19 are to be cut away during frame sawing.

[0041] When frame sawing along long-and-short line patterns in Fig. 3. The semiconductor devices 1A are divided individually, as shown in Fig. 4A and Fig. 4B is shown. In this case, the heat dissipation plate 16 and the heat dissipation plate 17 have no steps, and the heat dissipation plate 16 and the heat dissipation plate 17 as a whole are flat. When the forming is carried out, the first anchor part 16b and the second anchor part 17b are formed as steps, as shown in Fig. 5A and Fig. 5B is shown.

[0042] Next, when the majority of semiconductor devices 1A are combined in parallel, as in Fig. 6A and Fig. Figure 6B shows the lower surface of the first armature part 16b of the heat dissipation plate 16 of the semiconductor device 1A and the upper surface of the second flat part 17a of the heat dissipation plate 17 of the semiconductor device 1A being engaged on one of their laterally opposite sides (the left side) so that they adhere to each other. The recess 16c of the heat dissipation plate 16 and the recess 17c of the heat dissipation plate 17, in this state, form a through-hole 18 in a top view (corresponding to a first through-hole).

[0043] Furthermore, the lower surface of the second armature part 17b of the heat dissipation plate 17 of the semiconductor device 1A and the upper surface of the first flat part 16a of the heat dissipation plate 16 of the semiconductor device 1A are engaged on the other of the laterally opposite sides (the right side) so that they adhere to one another. The recess 17c of the heat dissipation plate 17 and the recess 16c of the heat dissipation plate 16, in this state, form a through-hole 18 in a top view (corresponding to a second through-hole).

[0044] Next, as in Fig. 7A and Fig. As shown in Figure 7B, in the semiconductor device 1A, the spacer 11a, which has a recess (not shown), is arranged at the left end in a recessed portion of the L-shape of the heat dissipation plate 16 to form the through-hole 18, and the spacer 11a is secured to the heat dissipation plate 16 by the screw 10. In the semiconductor device 1A, at the right end, the spacer 11a, which has a recess (not shown), is arranged in a recessed portion of the L-shape of the heat dissipation plate 17 to form the through-hole 18, and the spacer 11a is secured to the heat dissipation plate 17 by the screw 10. To insulate the screw 10 and the heat sink (not shown), the screw 10 is inserted through the spacer 11b into the through-hole 18.

[0045] As described above, in the semiconductor device 1A according to embodiment 2, the heat dissipation plate 16 and the heat dissipation plate 17 are positioned at the same height above the sealing resin 2. The near end and the far end of the heat dissipation plate 16 each have the first flat part 16a and the first armature part 16b. The near end and the far end of the heat dissipation plate 17 each have the second flat part 17a and the second armature part 17b. The height position of the lower surface of the first armature part 16b and the height position of the upper surface of the second flat part 17a are the same, and the height position of the lower surface of the second armature part 17b and the height position of the upper surface of the first flat part 16a are the same.

[0046] Thus, if the majority of semiconductor devices 1A are connected in parallel, the heat dissipation plate 16 and the heat dissipation plate 17 of semiconductor device 1A on one of the laterally opposite sides (the left side) can be connected so that they adhere to each other, and the heat dissipation plate 17 and the heat dissipation plate 16 of semiconductor device 1A on the other of the laterally opposite sides (the right side) can be connected so that they adhere to each other without lifting the semiconductor devices 1A from their mounting positions. A current and thermal imbalance that would otherwise occur if the semiconductor devices 1A were connected in parallel can thereby be prevented.

[0047] The heat dissipation plate 16 and the heat dissipation plate 17 are each L-shaped, such that they have the near end part and the far end part, which is narrower than the near end part in a top view. The heat dissipation plate 16 has point symmetry with the heat dissipation plate 17 over the sealing resin 2 in a top view. The first armature part 16b of the heat dissipation plate 16 can be engaged with the second flat part 17a of the heat dissipation plate 17 of the semiconductor device 1A on one of the laterally opposite sides, and the second armature part 17b of the heat dissipation plate 17 can be engaged with the first flat part 16a of the heat dissipation plate 16 of the semiconductor device 1A on the other of the laterally opposite sides.

[0048] The heat dissipation plate 16 and the heat dissipation plate 17 can be connected more rigidly than those in embodiment 1.

[0049] The first flat part 16a and the second flat part 17a each have the recess 16c and the recess 17c, respectively, which extend from the upper surface to the lower surface and are semicircular in a top view. The recesses 16c and 17c form the through-hole 18, which is circular in a top view when the heat dissipation plate 16 and the heat dissipation plate 17 of the semiconductor device 1A are engaged on one of the laterally opposite sides (the left side). The recesses 16c and 17c form the through-hole 18, which is circular in a top view when the heat dissipation plate 17 and the heat dissipation plate 16 of the semiconductor device 1A are engaged on the other of the laterally opposite sides (the right side). The heat dissipation plate 16 and the heat dissipation plate 17 can therefore be easily connected by the screw 10.

[0050] The heat dissipation plate 16 and the heat dissipation plate 17 do not necessarily each need to have the recess 16c and the recess 17c, as long as the heat dissipation plate 16 and the heat dissipation plate 17 can be joined. In this case, the heat dissipation plate 16 and the heat dissipation plate 17 can be joined by soldering, pressure welding or the like. <Ausführungsform 3>

[0051] A semiconductor device 1B according to embodiment 3 is described next. Fig. Figure 8 is a top view of semiconductor devices 1B according to embodiment 3 in front of a frame saw. Fig. Figure 9A is a top view of the semiconductor device 1B according to embodiment 3 after frame sawing, and Fig. Figure 9B is a side view of the semiconductor device 1B after frame sawing. Fig. 10A is a top view of the semiconductor device 1B according to embodiment 3 after forming, and Fig. Figure 10B is a side view of the semiconductor device 1B after forming. Fig. Figure 11A is a top view of the semiconductor devices 1B according to embodiment 3, which are combined in parallel, and Fig. Figure 11B is a side view of the semiconductor devices 1B combined in parallel. Fig. Figure 12A is a top view of the semiconductor devices 1B according to embodiment 3, which are connected in parallel, and Fig. Figure 12B is a side view of the semiconductor devices 1B, which are connected in parallel. The heat sink is in Fig. 12A and Fig. 12B not shown. In embodiment 3, the same components as those described in embodiments 1 and 2 bear the same reference numerals as those of the components described in embodiments 1 and 2, and a description thereof is omitted.

[0052] As in Fig. 10A and Fig. As shown in Figure 10B, in embodiment 3 the semiconductor device 1B has a heat dissipation plate 26 as the first heat dissipation plate and a heat dissipation plate 27 as the second heat dissipation plate instead of the heat dissipation plate 6 and the heat dissipation plate 7.

[0053] The heat dissipation plate 26 and the heat dissipation plate 27 each have a step that protrudes upwards by bending a plate-like part, which is made of copper, for example, and protrude from the same height position of the sealing resin 2.

[0054] The heat dissipation plate 26 has a first flat part 26a and a pair of first anchor parts 26b. The first flat part 26a is formed in a near end part of the heat dissipation plate 26. The pair of first anchor parts 26b is formed in a far end part of the heat dissipation plate 26 and is located above the first flat part 26a by means of the step. A gap 26c is formed between the pair of first anchor parts 26b.

[0055] The heat dissipation plate 27 has a second flat part 27a and a second armature part 27b. The second flat part 27a is formed in a near end part of the heat dissipation plate 27. The second armature part 27b is formed in a far end part of the heat dissipation plate 27 and is located above the second flat part 27a by means of the step. The second armature part 27b is formed in the middle along the width of the heat dissipation plate 27 and is such that it passes through the gap 26c of the heat dissipation plate 26 of another semiconductor device 1B and adheres to an upper surface of the first flat part 26a.

[0056] The height positions of the lower surfaces of the pair of first anchor parts 26b of the heat dissipation plate 26 and a height position of an upper surface of the second flat part 27a of the heat dissipation plate 27 are the same, and a height position of a lower surface of the second anchor part 27b of the heat dissipation plate 27 and a height position of an upper surface of the first flat part 26a of the heat dissipation plate 26 are the same.

[0057] Thus, as in Fig. 11A and Fig. Figure 11B shows that the pair of first armature parts 26b of the heat dissipation plate 26 can be brought into engagement with the second planar part 27a of the heat dissipation plate 27 of the semiconductor device 1B on one of the laterally opposite sides (the left side), and the second armature part 27b of the heat dissipation plate 27 can be brought into engagement with the first planar part 26a of the heat dissipation plate 26 of the semiconductor device 1B on the other of the laterally opposite sides (the right side).

[0058] A state in which the height positions of the lower surfaces of the pair of first anchor parts 26b of the heat dissipation plate 26 and the height position of the upper surface of the second flat part 27a of the heat dissipation plate 27 are the same, and the height position of the lower surface of the second anchor part 27b of the heat dissipation plate 27 and the height position of the upper surface of the first flat part 26a of the heat dissipation plate 26 are the same, includes not only a state in which they are exactly the same, but also a state in which they are slightly different due to a manufacturing defect and the like.

[0059] An inner circumference of the sealing resin 2 has a threaded bore 2a which extends in a top view from an upper surface to a lower surface.

[0060] A procedure for forming the heat dissipation plate 26 and the heat dissipation plate 27 and a procedure for connecting the semiconductor devices 1B are described next. As in Fig. As shown in Figure 8, the majority of semiconductor devices 1B are configured such that they are integrated in parallel in front of a frame saw. The heat dissipation plates 26 and 27 are configured such that they are integrated from adjacent semiconductor devices 1B. In this case, the heat dissipation plate 26 of semiconductor device 1B is integrated at the left end and the heat dissipation plate 27 of semiconductor device 1B is integrated at the right end. Fig. 8 integrated, whereby unnecessary parts 29 are to be cut off during frame sawing.

[0061] When frame sawing along long-and-short line patterns in Fig. 8 is executed, the semiconductor devices 1B are individually divided, as in Fig. 9A and Fig. 9B is shown. In this case, the heat dissipation plate 26 and the heat dissipation plate 27 have no steps; the heat dissipation plate 26 and the heat dissipation plate 27 as a whole are flat. When the forming is carried out, the first anchor parts 26b and the second anchor part 27b are formed as steps, as shown in Fig. 10A and Fig. 10B is shown.

[0062] Next, when the majority of semiconductor devices 1B are combined in parallel, as in Fig. 11A and Fig. Figure 11B shows the lower surfaces of the pair of first armature parts 26b of the heat dissipation plate 26 of the semiconductor device 1B and the upper surface of the second planar part 27a of the heat dissipation plate 27 of the semiconductor device 1B being engaged on one of the laterally opposite sides (the left side) so that they adhere to each other, and the upper surface of the first planar part 26a of the heat dissipation plate 26 of the semiconductor device 1B and the lower surface of the second armature part 27b of the heat dissipation plate 27 of the semiconductor device 1B being engaged on one of the laterally opposite sides (the left side) so that they adhere to each other.

[0063] Furthermore, the lower surface of the second armature part 27b of the heat dissipation plate 27 of the semiconductor device 1B and the upper surface of the first flat part 26a of the heat dissipation plate 26 of the semiconductor device 1B are engaged on the other of the laterally opposite sides (the right side) so that they adhere to each other, and the upper surface of the second flat part 27a of the heat dissipation plate 27 of the semiconductor device 1B and the lower surfaces of the pair of first armature parts 26b of the heat dissipation plate 26 of the semiconductor device 1B on the other of the laterally opposite sides (the right side) are engaged so that they adhere to each other.

[0064] Next, as in Fig. 12A and Fig.12B shows a screw 30 with thread engaging with the threaded bore 2a of the sealing resin 2, and the semiconductor devices 1B are attached to the upper surface of the heat sink (not shown) by the insulating film 9 in a state that they are combined in parallel.

[0065] As described above, in the semiconductor device 1B according to embodiment 3, the heat dissipation plate 26 and the heat dissipation plate 27 are positioned at the same height position of the sealing resin 2, the near end part and the far end part of the heat dissipation plate 26 each have the first flat part 26a and the first armature parts 26b, the near end part and the far end part of the heat dissipation plate 27 each have the second flat part 27a and the second armature part 27b, the height positions of the lower surfaces of the first armature parts 26b and the height position of the upper surface of the second flat part 27a are the same, and the height position of the lower surface of the second armature part 27b and the height position of the upper surface of the first flat part 26a are the same.

[0066] Thus, if the majority of semiconductor devices 1B are connected in parallel, the heat dissipation plate 26 and the heat dissipation plate 27 of semiconductor device 1B on one of the laterally opposite sides (the left side) can be connected so that they adhere to each other, and the heat dissipation plate 27 and the heat dissipation plate 26 of semiconductor device 1B on the other of the laterally opposite sides (the right side) can be connected so that they adhere to each other without lifting the semiconductor devices 1B from their mounting positions. A current and thermal imbalance that would otherwise occur if the semiconductor devices 1B were connected in parallel can thereby be prevented.

[0067] Since the inner circumference of the sealing resin 2 has the threaded bore 2a in a top view, the semiconductor devices 1B can be attached to the upper surface of the heat sink (not shown) without using spacers 11a and 11b, which are used in embodiments 1 and 2. This reduces the number of parts used when the majority of semiconductor devices 1B are connected in parallel.

[0068] The inner circumference of the sealing resin 2 can have the threaded bore 2a not only in embodiment 3 but also in embodiments 1 and 2.

[0069] The embodiments can be freely combined and can be suitably modified or omitted.

Claims

[1] Semiconductor device that can be connected to semiconductor devices arranged on laterally opposite sides thereof, the semiconductor device comprising: a semiconductor element to allow a current to flow from a source to a drain when a signal is input from a gate; a sealing resin (2) to seal the semiconductor element, wherein the sealing resin is rectangular in a top view; a gate terminal (3) which is electrically connected to the gate and protrudes in a top view from a first side of the sealing resin (2); a drain connection (4) which is electrically connected to the drain and protrudes in a top view from the first side of the sealing resin (2); a source connection (5) which is electrically connected to the source and protrudes in a top view from the first side of the sealing resin (2); a first heat dissipation plate (6, 16, 26) which is electrically connected to the drain and projects in a top view from a second side which overlaps with the first side of the sealing resin (2); and a second heat dissipation plate (7, 17, 27) which is electrically connected to the drain and protrudes in a top view from a third side opposite the second side of the sealing resin (2); where at least one height position of a lower surface of a distant end part of the first heat dissipation plate (6, 16, 26) and a height position of an upper surface of a near end part of the second heat dissipation plate (7, 17, 27) or a height position of a lower surface of a distant end part of the second heat dissipation plate (7, 17, 27) and a height position of an upper surface of a near end part of the first heat dissipation plate (6, 16, 26) are equal. [2] Semiconductor device according to claim 1, wherein the first heat dissipation plate (6) and the second heat dissipation plate (7) protrude from the same height position of the sealing resin (2), the far end part of the first heat dissipation plate (6) has a first flat part, the near end part of the second heat dissipation plate (7) has a second flat part, the first flat part is provided by a part that is bent laterally from the near end part of the first heat dissipation plate (6) that projects from the sealing resin (2) and extends upwards, and a height position of a lower surface of the first flat part and a height position of an upper surface of the second flat part are the same. [3] Semiconductor device according to claim 1, wherein the first heat dissipation plate (16, 26) and the second heat dissipation plate (17, 27) protrude from the same height position of the sealing resin (2), the near end part and the far end part of the first heat dissipation plate (16, 26) each have a first planar part (16a, 26a) and a first armature part (16b, 26b), the near end part and the far end part of the second heat dissipation plate (17, 27) each have a second flat part (17a, 27a) and a second anchor part (17b, 27b), a height position of a lower surface of the first anchor part (16b, 26b) and a height position of an upper surface of the second flat part (17a, 27a) are the same, and a height position of a lower surface of the second anchor part (17b, 27b) and a height position of an upper surface of the first flat part (16a, 26a) are the same. [4] Semiconductor device according to claim 2, wherein the first planar part and the second planar part each have a through-hole (6a, 7a) extending from an upper surface to a lower surface. [5] Semiconductor device according to claim 3, wherein the first heat dissipation plate (16) and the second heat dissipation plate (17) are each L-shaped, such that they have the near end part and the far end part, which is narrower than the near end part in a top view, the first heat dissipation plate (16) has a point symmetry with the second heat dissipation plate (17) over the sealing resin (2) in a top view, the first armature part (16b) of the first heat dissipation plate (16) can be brought into engagement with the second flat part (17a) of the second heat dissipation plate (17) of the semiconductor device on one of the laterally opposite sides, and the second armature part (17b) of the second heat dissipation plate (17) can be brought into engagement with the first flat part (16a) of the first heat dissipation plate (16) of the semiconductor device on the other of the laterally opposite sides. [6] Semiconductor device according to claim 5, wherein the first flat part (16a) and the second flat part (17a) each have recesses (16c, 17c) which extend from an upper surface to a lower surface and are semicircular in a top view, the recesses (16c, 17c) in a state such that the first heat dissipation plate (16) and the second heat dissipation plate (17) of the semiconductor device are engaged on one of the laterally opposite sides, forming a first through-hole (18) which is circular in a top view, and the recesses (16c, 17c) in a state such that the second heat dissipation plate (17) and the first heat dissipation plate (16) of the semiconductor device are engaged on the other of the laterally opposite sides, forming a second through-hole (18) which is circular in a top view. [7] Semiconductor device according to any one of claims 1 to 6, wherein an inner circumference of the sealing resin (2) has a threaded bore (2a) in a top view.

Images