Half-bridge module, half-bridge module arrangement and converter

Abstract

The present invention relates to a half-bridge module (100) comprising: two externally contactable DC voltage terminals (1.1, 2.1) and two semiconductor switch components (6, 7), wherein an input contact (6.1) of the first semiconductor switch component (6) is electrically connected to the first DC voltage terminal (1.1), an output contact (7.2) of the second semiconductor switch component (7) is electrically connected to the second DC voltage terminal (2.1), and an output contact (6.2) of the first semiconductor switch component (6) and an input contact (7.1) of the second semiconductor switch component (7) are electrically connected to the AC voltage terminal (3.1), wherein an internal gate driver unit (8) and an externally contactable signal terminal (4.1) are provided, and wherein the gate driver unit (8) is connected to the control input (6.3) of the first semiconductor switch component (6), the control input (7.3) the second semiconductor switch component (7) and the signal terminal (4.1) is electrically connected and is configured to receive control signals from an external source via the signal terminal (4.1) and to control the first semiconductor switch component (6) and the second semiconductor switch component (7) based on the received control signals. The present invention further relates to a half-bridge module arrangement (300) and a converter (200) with a half-bridge module (100) according to the invention.

Description

[0001] The present invention relates to a half-bridge module comprising: an externally contactable first DC voltage terminal, an externally contactable second DC voltage terminal, an externally contactable AC voltage terminal, a first semiconductor switch component, and a second semiconductor switch component, wherein the first semiconductor switch component and the second semiconductor switch component each have an input contact, an output contact, and a control contact, wherein the input contact of the first semiconductor switch component is electrically connected to the first DC voltage terminal, wherein the output contact of the second semiconductor switch component is electrically connected to the second DC voltage terminal, and wherein the output contact of the first semiconductor switch component and the input contact of the second semiconductor switch component are electrically connected to the AC voltage terminal.

[0002] A half-bridge module of the type mentioned above is known, for example, from DE 10 2020 206 464 A1.

[0003] The present invention is based on the objective of enabling a relatively simple manufacture of a converter.

[0004] This problem is solved according to the invention by a half-bridge module with the features of claim 1, a half-bridge module arrangement with the features of claim 4 and a converter with the features of claim 6.

[0005] The half-bridge module according to the invention comprises a first DC voltage connection and a second DC voltage connection, both of which can be contacted externally, for connecting the half-bridge module according to the invention to a DC voltage energy source and / or to a DC voltage energy storage device, such as a high-voltage battery of an electrically powered vehicle. The first DC voltage connection and the second DC voltage connection can each be configured, for example, as a so-called contact tab or as a contact surface, also referred to as a contact pad.

[0006] The half-bridge module according to the invention further comprises an externally contactable AC voltage connection for connecting the half-bridge module according to the invention to an AC voltage load, such as a traction motor of an electrically powered vehicle, and / or to an AC voltage energy source, such as an AC power grid. The AC voltage connection can also be designed, for example, as a contact lug or as a contact surface.

[0007] The half-bridge module according to the invention further comprises a first semiconductor switch component and a second semiconductor switch component, which are typically designed in the form of a so-called die or chip, respectively. Each semiconductor switch component comprises one or more semiconductor transistors connected to form a macroscopic semiconductor switch (also referred to as a topological (semiconductor) switch). The first semiconductor switch component is often also referred to as a high-side (semiconductor) switch and the second semiconductor switch component as a low-side (semiconductor) switch. In general, the first semiconductor switch component and the second semiconductor switch component are based on the same semiconductor technology, with both semiconductor switch components preferably being designed as field-effect transistors (FETs), and particularly preferably as so-called metal-oxide-semiconductor field-effect transistors (MOSFETs).In principle, however, the two semiconductor switch components can also be designed as a different type of semiconductor transistor, for example as so-called bipolar transistors.

[0008] The two semiconductor switching devices each comprise an input contact, an output contact, and a control contact. The input contact of the first semiconductor switching device is electrically connected to the first DC voltage terminal, the output contact of the second semiconductor switching device is electrically connected to the second DC voltage terminal, and both the output contact of the first semiconductor switching device and the input contact of the second semiconductor switching device are electrically connected to the AC voltage terminal. In FETs, the input contact is also referred to as the source contact, the output contact as the drain contact, and the control contact as the gate contact.

[0009] According to the invention, the half-bridge module further comprises an internal gate driver unit, i.e., arranged within the module boundaries of the half-bridge module, for controlling, i.e., for selectively switching on and off, the two semiconductor switch components, as well as an externally accessible signal connection for receiving control signals from an external control device. The gate driver unit is electrically connected to the control input of the first semiconductor switch component and the control input of the second semiconductor switch component in order to selectively switch the two semiconductor switch components on or off by providing corresponding signals at the respective control inputs. The gate driver unit is also electrically connected to the signal connection in order to receive control signals from an external source via the signal connection of the half-bridge module.The gate driver unit is configured to receive control signals from an external source via its signal input and to control the first and second semiconductor switch components based on these signals. Typically, the gate driver unit comprises electrical and / or electronic components, such as an ASIC, to generate the signals supplied to the control inputs of the two semiconductor switch components, based on the control signals received externally via the signal input. The gate driver unit can, for example, be housed in a module package together with the two semiconductor switch components or be encapsulated together with them.

[0010] Because the half-bridge module according to the invention has an internal gate driver unit and an externally accessible signal connection for providing control signals to the gate driver unit, several half-bridge modules according to the invention can be easily interconnected at the control signal level. This enables the relatively simple manufacture of a converter comprising several half-bridge modules according to the invention, since the influence of parasitic electrical quantities is relatively uncritical when transmitting control signals to the gate driver units of the individual half-bridge modules, and in particular significantly less critical than when transmitting signals to the control inputs of the individual semiconductor switching components.

[0011] Preferably, the AC voltage connection is formed by a metallic AC voltage contact layer, and the first and second semiconductor switch components are configured differently, with the output contact of the first semiconductor switch component being located on a bottom surface and the input contact of the second semiconductor switch component being located on a bottom surface. The AC voltage contact layer preferably consists of copper, which has relatively high electrical and thermal conductivity, but can also be made of another metal.The first and second semiconductor switch components are each arranged with their undersides facing the AC voltage contact layer such that the output contact of the first semiconductor switch component, located on its underside, and the input contact of the second semiconductor switch component, located on its underside, are electrically connected to the AC voltage contact layer and consequently to the AC voltage connection. This design eliminates the need for an electrically insulating and typically relatively poorly thermally conductive substrate, on which a separate metallic contact layer is typically applied for each of the two semiconductor switch components in known half-bridge modules. This enables cost-effective manufacturing of the half-bridge module according to the invention.

[0012] For switching high electrical power, several semiconductor switching components can be connected in parallel. The half-bridge module according to the invention therefore preferably comprises several first semiconductor switching components, i.e., several semiconductor switching components with an output contact arranged on the underside, and several second semiconductor switching components, i.e., several semiconductor switching components with an input contact arranged on the underside, all of which are arranged with their underside against the AC voltage contact layer. Specifically, the semiconductor switching components are arranged on the AC voltage contact layer such that the output contacts of all first semiconductor switching components and the input contacts of all second semiconductor switching components are each electrically connected to the AC voltage contact layer.Typically, the input contacts of all first semiconductor switch components are electrically connected to the first DC voltage terminal, and the output contacts of all second semiconductor switch components are electrically connected to the first DC voltage terminal, so that all first semiconductor switch components are connected in parallel and all second semiconductor switch components are connected in parallel. This allows for the realization of a half-bridge module capable of switching particularly high electrical power.

[0013] The half-bridge module arrangement according to the invention comprises a previously described half-bridge module, wherein the first DC voltage terminal or the second DC voltage terminal is formed by a metallic DC contact layer, which is arranged on a top surface of the first semiconductor switch component or on a top surface of the second semiconductor switch component and is electrically connected to the input contact of the first semiconductor switch component or the output contact of the second semiconductor switch component. The DC contact layer preferably consists of copper, which has relatively high electrical conductivity and relatively high thermal conductivity, but can in principle also consist of another metal.

[0014] The half-bridge module arrangement according to the invention further comprises a DC busbar, wherein a contact area of ​​the DC busbar rests on a first side against the DC contact layer such that the DC busbar is electrically connected to the DC contact layer. Advantageously, the DC busbar is firmly connected to the DC contact layer, for example by soldering.

[0015] The half-bridge module arrangement according to the invention further comprises a cooling channel configured to be supplied with a preferably liquid coolant. Preferably, the cooling channel is connected to a coolant circuit so that coolant is continuously pumped through the cooling channel during operation of the cooling circuit. The cooling channel is arranged on the second side of the DC bus bar opposite the first side such that the contact area of ​​the DC bus bar on the second side is surrounded by the coolant flowing through the cooling channel. This enables efficient heat transfer from the semiconductor switch component electrically connected to the DC bus bar, via the DC contact layer and the DC bus bar, into the coolant flowing through the cooling channel, thus providing efficient cooling of the respective semiconductor switch component.Particularly efficient cooling can be achieved if both DC terminals of the half-bridge module are each formed by a DC contact layer, to which a separate DC busbar is connected, with the coolant flowing through the cooling channel around both DC busbars in the contact area on the second side. In principle, it is also conceivable that two separate cooling channels are present, each arranged on one of the two DC busbars.

[0016] Preferably, a surface area enlargement structure is formed within the cooling channel on the second side of the DC busbar, which is surrounded by the coolant flowing through the cooling channel. This surface area enlargement structure creates a particularly large contact area between the DC busbar and the coolant, thus enabling particularly efficient cooling of the respective semiconductor switch component.

[0017] The converter according to the invention comprises a printed circuit board and several previously described half-bridge modules according to the invention, all of which are arranged on the printed circuit board.

[0018] The inverter according to the invention further comprises control electronics, which are also arranged on the circuit board and are electrically connected via the circuit board to the signal terminal of each half-bridge module. The control electronics are configured to provide control signals for controlling the respective semiconductor switching components to the signal terminals and thus to the gate driver units of the individual half-bridge modules.

[0019] In the inverter according to the invention, only control signals need to be transmitted via the circuit board to the gate driver units of the half-bridge modules, whereby the control signals are relatively insensitive to parasitic electrical quantities. The inverter according to the invention can therefore be manufactured relatively easily.

[0020] In a preferred embodiment of the inverter according to the invention, the circuit board has an opening and an AC busbar is provided, which extends through the opening of the circuit board and is electrically connected to the AC terminal of a half-bridge module. Preferably, a number of AC busbars corresponding to the number of AC terminals of the inverter are provided, each extending through an opening of the circuit board and each electrically connected to the AC terminal of a half-bridge module. Preferably, a current sensor is arranged at at least one opening of the circuit board, preferably at each opening of the circuit board, such that an electric current flowing through the respective AC busbar can be detected by the current sensor.Advantageously, all current sensors are connected to the control electronics via the circuit board. This enables reliable control of the half-bridge modules by the control electronics.

[0021] Exemplary embodiments of the present invention are described below with reference to the accompanying figures. These show: Fig. 1 a schematic diagram of a half-bridge module according to the invention, Fig. 2 schematically a top view of a half-bridge module according to the invention, Fig. 3 schematically a top view of a cross-sectional surface of a first half of the along the in Fig. 2 drawn line cut half-bridge module from Fig. 2, Fig. 4 schematically a top view of a cross-sectional surface of a second half of the along the in Fig. 2 drawn line cut half-bridge module from Fig. 2, Fig. 5 a schematic diagram of a converter according to the invention, and Fig. 6 a schematic side view of a half-bridge module arrangement of the converter according to the invention. Fig. 4, in partially cropped view.

[0022] Fig. 1 to Fig. Figure 4 shows a half-bridge module 100 according to the invention, which forms a pre-assembled unit that can be further processed as a whole.

[0023] The half-bridge module 100 comprises an externally contactable, copper-based first DC voltage contact layer 1, which forms a first DC voltage connection 1.1 of the half-bridge module 100.

[0024] The half-bridge module 100 further comprises a second DC contact layer 2 made of copper, which can be contacted externally and forms a second DC connection 2.1 of the half-bridge module 100.

[0025] The half-bridge module 100 further comprises an externally contactable, copper AC voltage contact layer 3, which forms an AC voltage connection 3.1 of the half-bridge module 100.

[0026] The half-bridge module 100 further comprises a first conductor element 4 that can be contacted externally and forms a signal connection 4.1 of the half-bridge module 100.

[0027] The half-bridge module 100 further comprises a second conductor element 5 that can be contacted externally and forms a supply voltage connection 5.1 of the half-bridge module 100.

[0028] The half-bridge module 100 further comprises two first semiconductor switch components 6, each having an input contact 6.1, an output contact 6.2 and a control contact 6.3, wherein the input contact 6.1 and the control contact 6.3 are each arranged on a top side 6.4 of the first semiconductor switch component 6 and the output contact 6.2 is arranged on a bottom side 6.5 of the first semiconductor switch component 6.

[0029] The first two semiconductor switch components 6 are each arranged with their underside 6.5 on the AC voltage contact layer 3 such that the output contacts 6.2 of the two first semiconductor switch components 6 are each electrically connected to the AC voltage contact layer 3 and consequently to the AC voltage connection 3.1.

[0030] The first DC contact layer 1 is arranged on the top side 6.4 of the two first semiconductor switch components 6 such that the input contacts 6.1 of the two first semiconductor switch components 6 are each electrically connected to the first DC contact layer 1 and consequently to the first DC terminal 1.1.

[0031] The half-bridge module 100 further comprises two second semiconductor switch components 7, each having an input contact 7.1, an output contact 7.2 and a control contact 7.3, wherein the output contact 7.2 and the control contact 7.3 are each arranged on a top side 7.4 of the second semiconductor switch component 7 and the input contact 7.1 is arranged on a bottom side 7.5 of the second semiconductor switch component 7.

[0032] The two second semiconductor switch components 7 are each arranged with their underside 7.5 on the AC voltage contact layer 3 such that the input contacts 7.1 of the two second semiconductor switch components 7 are each electrically connected to the AC voltage contact layer 3 and consequently to the AC voltage connection 3.1.

[0033] The second DC contact layer 2 is arranged on the top side 7.4 of the two second semiconductor switch components 7 such that the output contacts 7.2 of the two second semiconductor switch components 7 are each electrically connected to the second DC contact layer 2 and consequently to the second DC terminal 2.1.

[0034] The half-bridge module 100 further comprises a gate driver unit 8, which includes a printed circuit board 8.1 and gate driver electronics 8.2 arranged on the printed circuit board 8.1.

[0035] The gate driver unit 8 is electrically connected via a third conductor element 9 to the control terminals 6.3 of the two first semiconductor switch components 6, which are arranged on the top side 6.4 of the first semiconductor switch component 6.

[0036] The gate driver unit 8 is electrically connected via a fourth conductor element 10 to the control terminals 7.3 of the two second semiconductor switch components 7, which are arranged on the top side 7.4 of the second semiconductor switch component 7.

[0037] The gate driver unit 8 is electrically connected to the first conductor element 4 and to the second conductor element 5, and consequently electrically connected to the signal terminal 4.1 and to the supply voltage terminal 5.1.

[0038] The gate driver unit 8 is configured to receive control signals from external sources via signal port 4.1 and to control the first two semiconductor switch components 6 and the second two semiconductor switch components 7 based on the received control signals.

[0039] Fig. Figure 5 shows a converter 200 according to the invention, comprising a printed circuit board 201 and comprising six half-bridge modules 100 designed as described above, which are arranged on the printed circuit board 201.

[0040] The inverter 200 also includes control electronics 202, which is arranged on the circuit board 201 and is electrically connected via the circuit board 201 and first contacting elements 203 to the signal connections 4.1 of all six half-bridge modules 100.

[0041] The control electronics 202 is set up to provide control signals for controlling the semiconductor switch components 6, 7 to the signal terminals 4.1 and thus to the gate driver units 8 of the six half-bridge modules 100.

[0042] The inverter 200 also includes a power supply electronics 204, which is arranged on the circuit board 201 and is electrically connected via the circuit board 201 and second contacting elements 205 to the supply voltage connections 5.1 of all six half-bridge modules 100.

[0043] The power supply electronics 204 is set up to provide a supply voltage to the supply voltage terminals 5.1 and thus to the gate driver units 8 of the six half-bridge modules 100.

[0044] Fig.Figure 6 shows, using one of the six half-bridge modules 100 of the converter 200 as an example, a half-bridge module arrangement 300 according to the invention comprising the half-bridge module 100, the circuit board 201, the control electronics 202 and the power supply electronics 204, wherein all six half-bridge modules 100 of the converter 200 are arranged in the same way in principle.

[0045] The converter 200 or the half-bridge module arrangement 300 further comprises an AC current bus 206, which extends from a side of the circuit board 201 facing away from the half-bridge module 100 through an opening 201.1 of the circuit board 201 and is arranged on the AC contact layer 3 of the half-bridge module 100 in such a way that the AC current bus 203 is electrically connected to the AC contact layer 3 and consequently to the AC terminal 3.1 of the half-bridge module 100.

[0046] The converter 200 or the half-bridge module arrangement 300 further comprises a current sensor 207, which is arranged on the circuit board 201 at the opening 201.1 of the circuit board 201 in such a way that an electric current flowing through the AC voltage busbar 206 can be detected by the current sensor 207.

[0047] The converter 200 or the half-bridge module arrangement 300 further comprises a DC current bus 208, which is arranged on the side of the half-bridge module 100 facing away from the circuit board 201.

[0048] The DC busbar 208 is arranged on the half-bridge module 100 in such a way that a contact area 208.1 of the DC busbar 208 on a first side 208.3 is in contact with the first DC contact layer 1 in such a way that the DC busbar 208 is electrically connected to the DC contact layer 1 and consequently to the first DC connection 1.1 of the half-bridge module 100.

[0049] On a second side 208.4 of the DC current rail 208 facing away from the half-bridge module 100, a surface enlargement structure 208.2 is formed, particularly also in the contact area 208.1.

[0050] The converter 200 or the half-bridge module arrangement 300 further comprises a cooling channel element 209, which is arranged on the second side 208.4 of the DC busbar 208 facing away from the half-bridge module 100 and together with the DC busbar 208 defines a cooling channel 211 sealed by sealing elements 210, which is designed to be supplied with a coolant K.

[0051] The cooling channel element 209 is arranged on the DC busbar 208 in such a way that the surface enlargement structure 208.2 is located inside the cooling channel 211 and is surrounded by the coolant K flowing through the cooling channel 211, particularly also in the contact area 208.1 of the DC busbar 208. Reference symbol list 100 half-bridge modules 1 first DC contact layer 1.1 First DC connection 2 second DC contact layer 2.1 Second DC connection 3 AC voltage contact layer 3.1 AC voltage connection 4 first conductor element 4.1 Signal connection 5 second ladder element 5.1 Supply voltage connection 6 first semiconductor switch components 6.1 Input contact 6.2 Output contact 6.3 Control contact 6.4 Top 6.5 Underside 7 second semiconductor switch components 7.1 Input contact 7.2 Output contact 7.3 Control contact 7.4 Top side 7.5 Underside 8 Gate driver unit 8.1 Printed circuit board 8.2 Gate driver electronics 9 third ladder element 10 fourth ladder element 200 inverters 201 Circuit board 201.1 Opening 202 Control electronics 203 first contacting element 204 Power supply electronics 205 second contacting element 206 AC busbar 207 Current sensor 208 DC busbar 208.1 Contact area 208.2 Surface Enlargement Structure 208.3 first page 208.4 second page 209 Cooling channel element 210 sealing elements 211 Cooling channel 300 half-bridge module arrangement K Coolant QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] DE 10 2020 206 464 A1

[0002]

Claims

[1] Half-bridge module (100) comprising: a first DC voltage connection (1.1) that can be contacted externally, a second DC voltage connection (2.1) that can be contacted externally, an externally contactable AC voltage connection (3.1), a first semiconductor switch component (6), and a second semiconductor switch component (7), wherein the first semiconductor switch component (6) and the second semiconductor switch component (7) each have an input contact (6.1, 7.1), an output contact (6.2, 7.2) and a control contact (6.3, 7.3), wherein the input contact (6.1) of the first semiconductor switch component (6) is electrically connected to the first DC voltage terminal (1.1), wherein the output contact (7.2) of the second semiconductor switch component (7) is electrically connected to the second DC voltage terminal (2.1), and wherein the output contact (6.2) of the first semiconductor switch component (6) and the input contact (7.2) of the second semiconductor switch component (7) is electrically connected to the AC voltage terminal (3.1), characterized by , that a module-internal gate driver unit (8) and an externally contactable signal connection (4.1) are present, wherein the gate driver unit (8) is electrically connected to the control input (6.3) of the first semiconductor switch component (6), the control input (7.3) of the second semiconductor switch component (7) and the signal terminal (4.1), and wherein the gate driver unit (8) is configured to receive control signals from outside via the signal terminal (4.1) and to control the first semiconductor switch component (6) and the second semiconductor switch component (7) based on the received control signals. [2] Half-bridge module (100) according to claim 1, wherein the AC voltage connection (3.1) is formed by a metallic AC voltage contact layer (3), wherein in the first semiconductor switch component (6) the output contact (6.2) is arranged on a bottom side (6.5) and in the second semiconductor switch component (7) the input contact (7.1) is arranged on a bottom side (7.5), and wherein the first semiconductor switch component (6) and the second semiconductor switch component (7) are each arranged with the underside (6.5, 7.5) on the AC voltage contacting layer (3) such that the output contact (6.2) of the first semiconductor switch component (6) and the input contact (7.1) of the second semiconductor switch component (7) are electrically connected to the AC voltage contacting layer (3). [3] Half-bridge module (100) according to claim 2, comprising a plurality of first semiconductor switch components (6), in each of which the output contact (6.2) is arranged on the underside (6.5), and a plurality of second semiconductor switch components (7), in each of which the input contact (7.1) is arranged on the underside (7.5), wherein all first semiconductor switch components (6) and all second semiconductor switch components (7) are each arranged with the underside (6.5, 7.5) on the AC voltage contacting layer (3), such that the output contacts (6.2) of all first semiconductor switch components (6) and the input contacts (7.1) of all second semiconductor switch components (7) are each electrically connected to the AC voltage contacting layer (3). [4] Half-bridge module arrangement (300) comprising: a half-bridge module (100) according to one of the preceding claims, wherein the first DC voltage connection (1.1) or the second DC voltage connection (2.1) is formed by a metallic DC voltage contact layer (1), a DC busbar (208), wherein a contact region (208.1) of the DC busbar (208) rests on a first side (208.3) against the DC contacting layer (1), and a cooling channel (211) through which a coolant (K) flows, wherein the cooling channel (211) is arranged on a second side (208.4) of the DC busbar (208) opposite the first side (208.3) in such a way that the contact region (208.1) of the DC busbar (208) on the second side (208.4) is flowed around by the coolant (K) flowing through the cooling channel (211). [5] Half-bridge module arrangement (300) according to claim 4, wherein a surface enlargement structure (208.2) is formed within the cooling channel (211) on the second side (208.4) of the DC busbar (208). [6] Converter (200) comprising: a printed circuit board (201), a plurality of half-bridge modules (100) according to one of claims 1 to 3, which are arranged on the circuit board (201), and a control electronics unit (202) arranged on the circuit board (201) and is electrically connected to the signal terminal (4.1) of each half-bridge module (100), wherein the control electronics (202) is configured to provide control signals to the signal terminals (4.1) of the half-bridge modules (100). [7] Converter (200) according to claim 6, wherein the circuit board (201) has an opening (201.1), wherein an AC voltage busbar (206) is present which extends through the opening (201.1) of the circuit board (201) and is electrically connected to the AC voltage terminal (206) of a half-bridge module (100), and wherein a current sensor (207) is arranged at the opening (201.1) of the circuit board (201) such that an electrical current flowing through the AC voltage busbar (206) can be detected by the current sensor (207).

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