Vacuum arrangement, method and use

Abstract

According to various embodiments, a vacuum arrangement comprises: a vacuum chamber housing (812); a transport device for transporting a substrate along a transport path (111) within the vacuum chamber housing (812); a plasma source (150) comprising a plasma source housing (102) in which a cavity (102h) is provided, wherein the plasma source (150) is configured to form a plasma by means of the cavity (102h), to which the transport path (111) is exposed; an electrode (202) arranged in the vacuum chamber housing (812) and adjacent to the plasma source (150); a high-frequency transmission device (110) ohmically coupling the plasma source housing (102) to the electrode (202).

Description

[0001] Various embodiments relate to a vacuum arrangement, a method and a use.

[0002] In general, a substrate can be treated (processed) in a vacuum, e.g., coated, so that the chemical and / or physical properties of the substrate can be changed. Various coating processes can be used to coat a substrate, of which physical vapor deposition (PVD) is an established example. For example, a vacuum coating system can be used to deposit one or more layers on one or more substrates by means of chemical and / or physical vapor deposition. Reference is made to US Pat. No. 6,432,260 B1, DE 10 2007 051 444 A1, DE 10 2022 124 811 B3, DE 697 33 530 T2, DE 31 36 798 A1, and DE 10 2016 109 610 A1.

[0003] For various processes, it may be advantageous to pretreat or post-treat the substrate using a plasma. A plasma source, such as a hollow electrode, is used to generate the plasma. In this regard, high demands are generally placed on the lifetime of the plasma source to reduce maintenance costs.

[0004] Various embodiments are based on the realization that the lifetime of the plasma source itself is limited by the lifetime of individual components that are themselves exposed to the plasma. If the component with the shortest lifetime fails, the plasma source as a whole often fails as well, requiring maintenance. In this context, it was recognized that this is the case with a so-called grid electrode, which a plasma source is often equipped with when sold as a ready-made solution.

[0005] A grid electrode is used to limit the spread of the plasma while still allowing the exchange of atoms, electrons, and ions through the grid electrode. However, the grid electrode itself is exposed to the plasma and is eroded by it until the grid electrode fails. If the grid electrode fails, the plasma spreads into the vacuum chamber and can damage other components, such as seals, bearings, etc. Therefore, a compromise often has to be made, resulting in either a shorter maintenance interval to replace the grid electrode or the risk of damage to other, sometimes costly, components.

[0006] Likewise, the removal of the grid electrode imposes high plasma purity requirements, as the components of the grid electrode released by the plasma can reach the substrate and, for example, contaminate it. Due to the metallic nature of the grid electrode, this can have a significant impact on the properties of the semiconductor product, for example in semiconductor applications.

[0007] According to various embodiments, a vacuum arrangement, method, and use are provided that inhibit the spatial propagation of the plasma, even if the grid electrode has failed or is not used at all. For example, the grid electrode can be omitted (e.g., disassembled beforehand), which improves the quality of the vacuum.

[0008] It was clearly recognized that the function of the grid electrode, which consists in limiting the spatial distribution of the electric field generated by the plasma source to generate the plasma, within the vacuum chamber housing is enhanced if it is RF-capable. In this context, it was recognized that although the vacuum chamber housing itself is often grounded, its charge exchange with the plasma source is inhibited due to the properties of the electric field, for example, its high frequency.

[0009] Illustratively, the current density within an electrical conductor can decrease with increasing frequency (also known as the skin effect), so that the impedance of the electrical conductor opposing the current flow is, to a first approximation, a function of the topography of the electrical conductor. In this case, the current flow occurs approximately primarily at the surface of the electrical conductor, something a vacuum chamber housing is generally not designed for. Therefore, the impedance of the vacuum chamber housing for RF (radio frequency) is usually too high to inhibit the propagation of the plasma by the vacuum chamber housing alone, even if the vacuum chamber housing is grounded.

[0010] Against this background, an RF transmission device is provided by means of which an electrode is provided in the vacuum chamber housing. The RF transmission device is coupled to the plasma source and promotes charge exchange between the electrode and the plasma source.

[0011] In the following, various examples are described which refer to those described above and those shown in the figures.

[0012] Example 1 is arranged according to one of the appended claims.

[0013] Example 2 is set up according to claim 1 and / or a vacuum arrangement comprising: a vacuum chamber housing; a transport device for transporting a substrate along a transport path within the vacuum chamber housing; a plasma source having a plasma source housing in which a cavity is provided, wherein the plasma source is set up to form a plasma by means of the cavity, to which the transport path is exposed; an electrode (also referred to as chamber electrode) arranged in the vacuum chamber housing and (immediately) next to (e.g. along the transport path behind) the plasma source; an RF transmission device which ohmically couples the plasma source housing to the electrode.

[0014] Example 3 is configured according to example 1 or 2, wherein the transmission device is ohmically coupled to the vacuum chamber housing or galvanically separated from the vacuum chamber housing (e.g., by means of a bearing device).

[0015] Example 4 is configured according to example 1 or 3, further comprising a bearing device by means of which the electrode is ohmically coupled to the vacuum chamber housing or mounted galvanically separated from the vacuum chamber housing; or wherein the electrode is attached to the vacuum chamber housing (e.g., a wall thereof) in a flat manner.

[0016] Example 5 is configured according to any one of Examples 1 to 4, wherein the plasma source housing is at least partially arranged outside the vacuum chamber housing and / or is mounted outside (e.g., on an outer side) of the vacuum chamber housing.

[0017] Example 6 is configured according to any one of examples 1 to 5, wherein the transmission device comprises one or more than one electrical line, preferably of which: a first line is arranged in the vacuum chamber housing and / or provided by means of an RF braid, and / or of which a second electrical line is arranged outside the vacuum chamber housing and / or provided by means of an RF braid.

[0018] Example 7 is configured according to any one of Examples 1 to 6, wherein the transmission device comprises one or more than one electrical RF stranded wire, of which preferably: a first RF stranded wire is arranged in the vacuum chamber housing (e.g., providing the first line) and / or a second RF stranded wire is arranged outside the vacuum chamber housing (e.g., providing the second line).

[0019] Example 8 is configured according to any one of Examples 1 to 7, wherein the vacuum chamber housing (e.g., a housing wall thereof) has one or more than one housing opening, of which a vacuum feedthrough of the transfer device is arranged in a first housing opening and / or of which a second housing opening is adjacent to the plasma source (e.g., exposing the cavity).

[0020] Example 9 is configured according to any one of examples 1 to 8, wherein the vacuum feedthrough comprises a copper rod which extends through the first housing opening and / or which ohmically couples two electrical lines (e.g., RF strands) of the transmission device to one another.

[0021] Example 10 is configured according to any one of examples 1 to 9, wherein the transmission device couples the plasma source housing to the electrode by means of an impedance having a value in a range 0.1 ohm (e.g., 1 ohm) to 1 megaohm (e.g., 1 kiloohm, e.g., 0.1 kiloohm, e.g., 10 ohms), for example, for a frequency in a range 1 kilohertz (e.g., 1 megahertz) to 100 megahertz (e.g., 20 megahertz) and / or the operating frequency of the plasma source.

[0022] Example 11 is configured according to any one of examples 1 to 10, wherein the transport path is arranged in a housing interior of the vacuum chamber housing, wherein the cavity is fluidically coupled to the housing interior, e.g., directly adjacent to the housing interior.

[0023] Example 12 is configured according to any one of Examples 1 to 11, which is free of an electrode (e.g., grid-shaped and / or filament-containing) arranged between the transport path and the cavity.

[0024] Example 13 is configured according to any one of Examples 1 to 12, further comprising: a gas separation channel having two gas separation walls, between which the transport path is arranged and of which one gas separation wall provides the electrode, wherein the gas separation channel is configured to gas-separate two processing regions from one another, of which a first processing region is exposed to the plasma source and / or of which a second processing region is exposed to a coating device (e.g. sputtering device).

[0025] Example 14 is configured according to any one of Examples 1 to 13, wherein the electrode is plate-shaped and / or has a mounting device to which the RF transmission device is attached.

[0026] Example 15 is configured according to any one of Examples 1 to 14, wherein an electrical impedance between the electrode and the plasma source housing provided by the transmission device is smaller for RF (eg, at least one frequency in a range of 1 MHz to 100 MHz) than an electrical impedance between the electrode and the plasma source housing provided by the vacuum chamber housing.

[0027] Example 16 is configured according to any one of Examples 1 to 15, wherein the transfer device is provided separately from and / or can be disassembled from the vacuum chamber housing.

[0028] Example 17 is configured according to any one of Examples 1 to 16 and / or is a method for operating the vacuum arrangement according to any one of Examples 1 to 16, the method comprising: forming a plasma by means of the plasma source, which plasma is arranged at least partially in the cavity; and transporting a substrate by means of the transport device along the transport path past the plasma source (e.g., through a processing region), such that the substrate is exposed to the plasma; wherein a vacuum is formed, e.g., in the cavity and / or to which the substrate is exposed.

[0029] Example 18 is configured according to any one of Examples 1 to 17 and / or is a method of operating the vacuum arrangement according to any one of Examples 1 to 16, the method comprising: removing an additional (e.g. grid-shaped) electrode which delimits the cavity and / or is arranged between the cavity and the transport path; forming a plasma (e.g. in the cavity) by means of the plasma source, which plasma is preferably arranged at least partially in the cavity and to which the transport path is exposed when the additional electrode is removed (e.g. so that the plasma is not exposed to a grid electrode); wherein a vacuum is formed, e.g. in the cavity and / or to which the transport path is exposed.

[0030] Example 19 is configured according to any one of Examples 1 to 18 and / or is a use of a wall (e.g., plate), preferably a gas separation wall, arranged in a vacuum chamber housing, as an electrode for a plasma source having a plasma source housing in which a cavity is provided, wherein the plasma source is configured to form a plasma by means of the cavity, wherein the electrode is ohmically coupled to the plasma source housing by means of an RF transmission device. This saves installation space.

[0031] Example 20 is configured according to any one of Examples 1 to 19, wherein the plasma source comprises a (e.g., trough-shaped or pot-shaped) protective structure (also referred to as a pot), which preferably consists of a dielectric (e.g., glass) and / or is electrically insulating, which is arranged in the cavity, wherein the protective structure provides, for example, a recess which is arranged in the cavity.

[0032] Example 21 is configured according to any one of Examples 1 to 20, wherein the plasma source comprises a first mounting device (e.g., a flange) (e.g., for mounting a grid electrode) which has a mounting surface (e.g., frame-shaped and / or offset) facing the transport path and in which an opening (e.g., extending from the mounting surface along a self-contained path) is formed, which opens into the cavity.

[0033] Example 22 is configured according to any one of Examples 1 to 21, wherein the plasma source housing comprises a second mounting device (e.g., an outwardly projecting flange) which encircles the cavity and / or the first mounting device along a self-contained path, wherein the second mounting device is configured to be vacuum-tightly joined to the vacuum chamber housing.

[0034] Example 23 is configured according to any one of Examples 1 to 22, wherein the plasma source comprises an electrode (also referred to as a main electrode) arranged in and / or delimiting the cavity, wherein the plasma source preferably comprises an electrical connection electrically coupled to the electrode. For example, the electrode may be mounted galvanically separated from the plasma source housing.

[0035] Example 24 is configured according to any one of Examples 1 to 23, wherein an operating frequency of the plasma source for forming a plasma in the cavity is a radio frequency and / or is in a range from about 1 kilohertz (eg, 1 MHz (megahertz)) to about 1 THz (terahertz), eg, to about 1 GHz (gigahertz).

[0036] Example 25 is configured according to any one of Examples 1 to 24, wherein the RF transmission device is connected in parallel to the vacuum chamber housing.

[0037] Example 26 is configured according to any one of Examples 1 to 25, wherein the transmission device comprises one or more than one electrical conductor (e.g., the RF electrical strand) comprising a braid comprising, for example, a plurality of filaments.

[0038] Example 27 is configured according to any one of Examples 1 to 26, wherein the RF transmission device has more filaments than the vacuum chamber housing and / or than the plasma source (e.g., a grid electrode thereof).

[0039] Example 28 is configured according to any one of Examples 1 to 27, wherein the RF transmission device has a larger proportion of copper and / or silver than the vacuum chamber housing.

[0040] Example 29 is configured according to any one of Examples 1 to 28, wherein the plasma source is configured to mount a grid electrode (also referred to as a protective grid) thereon, which delimits the cavity, wherein the grid electrode is preferably disassembled.

[0041] Example 30 is configured according to any one of Examples 1 to 29, wherein the plasma source comprises a dielectric pot disposed in the cavity.

[0042] Example 31 is configured according to any one of Examples 1 to 30, wherein the plasma source is configured to emit at least a portion of the plasma (e.g., as a plasma jet), e.g., directed (preferably in an emission direction) toward the transport path and / or out of the cavity.

[0043] Example 32 is configured according to any one of Examples 1 to 31, wherein the plasma source, during operation, emits at least an unneutralized portion of the plasma, e.g., directed toward the transport path and / or out of the cavity.

[0044] Example 33 is configured according to any one of Examples 1 to 32, wherein a working gas and / or reactive gas is supplied to the cavity during operation.

[0045] It shows Fig. 1A to 5B show the vacuum arrangement in different schematic views.

[0046] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "fore", "rear", etc., will be used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology is for the purpose of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention.It is understood that the features of the various exemplary embodiments described herein may be combined with one another unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

[0047] In this description, the terms "connected," "attached," and "coupled" are used to describe both a direct and an indirect connection (e.g., resistive and / or electrically conductive, e.g., an electrically conductive connection), a direct or indirect connection, and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals where appropriate.

[0048] According to various embodiments, the term "coupled" or "coupling" can be understood in the sense of a (e.g., mechanical, hydrostatic, thermal, and / or electrical), e.g., direct or indirect, connection and / or interaction. Several elements can, for example, be coupled to one another along an interaction chain, along which the interaction can be exchanged, e.g., a fluid (then also referred to as fluid-conducting coupling). For example, two coupled elements can exchange an interaction with one another, e.g., a mechanical, hydrostatic, thermal, and / or electrical interaction. A coupling of several vacuum components (e.g., valves, pumps, chambers, etc.) to one another can have them fluid-conductingly coupled to one another. According to various embodiments, "coupled" can be understood in the sense of a mechanical (e.g., physical) coupling, e.g.,by means of direct physical contact. A clutch can be configured to transmit a mechanical interaction (e.g., force, torque, etc.).

[0049] The term high frequency (HF) is understood herein to mean a frequency of more than 1 kHz (kilohertz), e.g., more than approximately 1 MHz (megahertz), e.g., more than approximately 1 GHz (gigahertz). In general, the upper value of the high frequency is only technically limited, but can be less than approximately 1000 terahertz. In this regard, reference is made herein to a frequency for operating the plasma source (also referred to as the operating frequency) of 13.56 MHz by way of example. It is understood that what is described here can apply to any other operating frequency, e.g., 40 kHz, 27.12 MHz, or 2.45 GHz. Alternatively or additionally, the operating frequency can be in a range from approximately 1 MHz to approximately 100 MHz.

[0050] According to various embodiments, a plasma-forming gas can be ionized using a plasma source, wherein a substrate can be processed using the resulting plasma. To generate a plasma, a voltage (e.g., having a high frequency) can be applied to an electrode (also referred to as the main electrode for short) of the plasma source, for example by operating the main electrode as a cathode. Even if the voltage is an alternating voltage, the term "cathode" is retained.

[0051] Examples of processes that can be carried out using plasma include: ion beam assisted deposition (IBAD), plasma etching (IBE, RIBE), plasma cleaning, plasma conditioning, provision of atomic species (e.g. oxygen, nitrogen).

[0052] The plasma-forming gas can, for example, comprise one or more than one reactive gas and / or one or more than one (e.g., inert) working gas. The reactive gas can comprise a gaseous material that reacts with the substrate and / or can be incorporated into the substrate by means of a chemical reaction, e.g., oxygen, nitrogen, nitrogen oxides, carbon oxides, and / or ozone. If, for example, a substrate is used that can form a nitride (e.g., AlNy), the reactive gas can comprise or be formed from nitrogen. If, for example, a substrate is used that can form an oxide (e.g., AlOx), the reactive gas can comprise or be formed from oxygen. The reactive gas can, for example, comprise or be formed from a gas mixture (reactive gas mixture) of several gases that react with the substrate and / or a layer deposited thereon, e.g., oxygen and nitrogen.According to various embodiments, the reactive gas may comprise at least one of the following: oxygen, nitrogen, hydrogen sulfide, methane, gaseous hydrocarbons, fluorine, chlorine, or another gaseous material.

[0053] According to various embodiments, the working gas can comprise a gaseous material which is inert, in other words which only participates in a few chemical reactions. A working gas can, for example, be or become defined by the substrate used and can be or become adapted to this. For example, a working gas can comprise a gas or a gas mixture which does not react with the substrate (e.g. to form a solid). The working gas can, for example, comprise a noble gas (e.g. helium, neon, argon, krypton, xenon, radon) or several noble gases. The plasma can be formed from the working gas. The reactive gas can have a higher chemical reactivity than the working gas, e.g. with regard to the substrate.

[0054] A mounting device is understood herein to be a device which is designed for mounting, for example for mounting on a mounting device complementary thereto (also referred to as a counter-mounting device). During mounting, a (e.g. rigid) connection of several components to one another by means of their mounting devices takes place. The mounting can be carried out (e.g. exclusively) in a form-fitting and / or detachable manner. The mounting device can preferably have a (e.g. planar) mounting surface which, during mounting, rests against a complementary mounting surface of the counter-mounting device. The mounting device can, for example, have one or more than one (e.g. integral) mounting profile (e.g. form-fitting profile), which is provided, for example, by means of an unevenness (e.g. projection or depression) of the mounting device. Examples of the mounting profile include: a thread, a groove (e.g.for keyway and / or dovetail groove), a locking lug, a bayonet lock, a tenon, etc. Examples of unevenness include: an opening (e.g. through hole and / or threaded hole), a bolt (e.g. a threaded bolt).

[0055] An exemplary implementation of the mounting device is configured as a flange, e.g., as a vacuum flange. The flange can be configured for rigid and / or detachable connection to another flange. Two flanges connected to one another form a so-called flange connection. The flange can have a (e.g., planar) mounting surface. Optionally, the flange can be penetrated by an opening (also referred to as a flange opening), which is surrounded by the mounting surface, e.g., along a self-contained path. The flange connection can have two flanges arranged with their mounting surfaces facing one another, e.g., touching one another. The flange opening of a vacuum chamber housing can open into the chamber interior of the vacuum chamber housing, e.g., adjacent to it. Optionally, the flange can have a groove surrounding the flange opening, e.g.,along the self-contained path, the flange opening is circumferentially adjacent and / or borders the mounting surface. Optionally, a seal, e.g., a metal seal or a plastic seal, can be accommodated in the groove. Optionally, the flange can have a projection that defines the mounting surface. For example, the mounting surface can protrude.

[0056] Complex processes may require more effective gas separation than can be achieved by using a chamber wall with a substrate transfer port.

[0057] For example, coating substrates with layers of different composition (e.g. different materials) may require different process conditions (e.g. metallic versus reactive / oxide or different reactive gas compositions such as Ar / N2 versus Ar / O2) and thus an effective gas separation of the process conditions from each other, which reduces mixing of the differing process conditions (gas separation).

[0058] Gas separation clearly describes a difference (e.g., gradient) in gas pressure or gas composition between vacuum-connected regions (e.g., gas-separated regions). The components (e.g., the parts of a gas separation device) that contribute to gas separation can be configured such that the difference in gas pressure or gas composition between vacuum-connected regions (e.g., gas-separated regions) can be maintained (e.g., stable). In other words, gas exchange between vacuum-connected and gas-separated regions can be inhibited, e.g., the greater the gas separation between the regions.

[0059] The gas separation device (e.g. a gas separation channel) can generally implement a minimum conductance (e.g. along the transport path), i.e. the conductance decreases along the transport path into the gas separation device and increases again along the transport path out of the gas separation device. The term "conductance" (e.g. gas conductance or general fluid conductance) of a body can be understood as a measure of its permeability to a material flow. The conductance indicates which volume of the material flow passes through the body when the body is exposed to a pressure difference (also referred to as pressure gradient) of the material flow. The gas conductance can be indirectly proportional to the flow resistance that the material flow experiences when passing through the body.The gas conductance of a nozzle is a function of the distance the material flow travels through the nozzle (also called the length of the nozzle orifice or nozzle length), the cross-sectional area of the nozzle orifice and / or the shape of the nozzle orifice.

[0060] According to various embodiments, the vacuum chamber can be provided by means of a chamber housing in which one or more chambers can be provided. The chamber housing can, for example, be coupled (e.g. in a gas-conducting manner) to a pump arrangement, e.g. a vacuum pump arrangement, for providing a negative pressure or a vacuum (vacuum chamber housing) and can be designed to be stable enough to withstand the effects of air pressure in the pumped-out state. The pump arrangement (comprising at least one vacuum pump, e.g. a high-vacuum pump, e.g. a turbomolecular pump) can make it possible to pump out part of the gas from the interior of the processing chamber, e.g. from the processing space. Accordingly, one or more vacuum chambers can be provided in one chamber housing. In other words, the chamber housing can be designed as a vacuum chamber housing.a coating chamber can be set up as a vacuum chamber.

[0061] The term “vacuum pressure” refers herein to a negative pressure in the range of vacuum (ie a pressure of less than 0.3 bar), e.g. a pressure in a range of about 10 mbar to about 1 mbar (in other words rough vacuum) can be provided or less, e.g. a pressure in a range of about 1 mbar to about 10 -3 mbar (in other words fine vacuum) or less, e.g. a pressure in a range of approximately 10 -3 mbar to approximately 10 -7 mbar (in other words high vacuum) or less, e.g. a pressure less than high vacuum, e.g. less than about 10 -7 mbar.

[0062] According to various embodiments, an electrode can be electrically conductive (e.g. an electrical conductivity of more than 10 4Siemens per meter) and / or metallic. The electrode may, for example, comprise or consist of a metal and / or be plate-shaped.

[0063] Fig. 1A illustrates a plasma source according to various embodiments 100a in a schematic side view or cross-sectional view, preferably configured according to Example 21 to Example 24.

[0064] An exemplary implementation for operating the plasma source involves stimulating plasma formation in the cavity 102h (also referred to as the source interior 102h) of the plasma source, e.g., the recess 104h (also referred to as the plasma formation space 104h) of the protective structure 104 arranged therein, in order to form a plasma therein. The plasma formation can be achieved by using a radio frequency as the operating frequency and / or by ionizing the plasma-forming gas.

[0065] An exemplary implementation of the protective structure 104 comprises a glass pot containing the plasma formation space 104h. Alternatively or additionally, the plasma source comprises an outlet opening 108, which, from an emission direction 105, borders the plasma formation space 104h and / or opens into the source interior 102h.

[0066] An exemplary implementation of plasma formation is achieved by means of a main electrode 106, to which the operating frequency is applied during operation. The main electrode 106 can, for example, be arranged in the source interior 102h and / or arranged between the plasma source housing 102 and the protective structure 104. The operating frequency can be provided by a generator (also referred to as a high-frequency generator).

[0067] An exemplary implementation of the plasma source housing 102 is attached to a vacuum flange 110, which surrounds the exit opening 108 along a closed path. Alternatively or additionally, the plasma source housing 102 and / or the vacuum flange 110 have a recessed mounting surface on which the grid electrode 112 abuts or can at least be mounted. The grid electrode 112 can be penetrated by a plurality of through-openings along the emission direction 105 and / or have a plurality of metallic filaments that delimit the source interior 102h. Alternatively or additionally, the grid electrode 112 can abut the protective structure 104.

[0068] An exemplary implementation of the main electrode 106 is galvanically separated from the plasma source housing 102 and / or coupled to the generator. Alternatively or additionally, the plasma source housing 102 is grounded during operation.

[0069] The plasma source can be configured as a radio-frequency excited plasma jet source, e.g., a magnetic field-assisted and / or filamentless plasma jet source. The grid electrode 112 can be configured, during operation, to neutralize the material passing through the grid electrode 112 (e.g., comprising parts of the plasma). If the grid electrode is mounted, the plasma source can, for example, emit a quasi-neutral plasma jet in the emission direction 105. Quasi-neutral can be understood as having, on average, an equal number of ions and electrons.

[0070] The coupling of electrical power into the plasma, which is provided by a radio-frequency generator (not shown), can be performed by means of the main electrode 106. For this purpose, a radio-frequency matching network (e.g., comprising one or more air-core coils and / or one or more capacitors) can optionally be present to match the impedance of the plasma source to the impedance of the radio-frequency generator.

[0071] An exemplary implementation (preferably according to Example 21) of the first mounting device 122 (also referred to as a grid mounting device) is configured as a flange for mounting a grid electrode 112. It can be understood that the grid mounting device is not present when the plasma source is a gridless plasma source. It can be understood that the grid mounting device can be disassembled when the plasma source is a grid-containing plasma source.

[0072] The grating mounting device 122 has, for example, a frame-shaped recess, which is delimited by a mounting surface directed in the emission direction 105. The mounting surface encircles the exit opening 108 along a closed path.

[0073] An exemplary implementation of the second mounting device (also referred to as a housing mounting device) is provided as an outwardly projecting vacuum flange 110, which surrounds the exit opening 108 and / or the grid mounting device (if present) along a closed path. The vacuum flange 110 can have a plurality of through-openings extending along the emission direction 105 for mounting the housing mounting device to the vacuum chamber housing. Furthermore, the vacuum flange 110 has a sealing groove for receiving a sealing ring.

[0074] Fig. 1B illustrates a plasma source according to various embodiments 100b in a schematic side view or cross-sectional view, preferably configured according to one of the embodiments 100a, e.g., according to Example 21 or Example 22, wherein the grid electrode 112 is omitted or disassembled (then also referred to as a gridless plasma source).

[0075] An exemplary implementation of the gridless plasma source according to embodiments 100b is provided by removing the grid electrode 112 (also referred to as grid-shaped electrode 112), which delimits the cavity 104h, and mounting and / or operating it on the vacuum chamber housing without the grid electrode 112. By means of the gridless plasma source thus provided according to embodiments 100b, a plasma is formed in the plasma formation space 104h, to which the transport path 111 is exposed, for example, when a substrate is transported along the transport path 111 by means of the transport device (not shown). Furthermore, the use of a wall, preferably a gas separation wall (see also Fig. 2C), which is arranged in the vacuum chamber housing 812, serves as a chamber electrode for the gridless plasma source, particularly when the plasma is formed in the plasma formation space 104h during operation. The chamber electrode inhibits the spatial spread of the plasma, which increases the service life of the vacuum assembly, even when the grid electrode is mounted.

[0076] Fig. 2A illustrates a vacuum chamber arrangement 200a according to various embodiments in a schematic side view or cross-sectional view, preferably configured according to one of the embodiments 100a to 100b and / or according to Example 2.

[0077] An exemplary implementation of the vacuum chamber housing 812 has a vacuum flange 202, to which the plasma source 150, e.g., its vacuum flange, is mounted. Furthermore, the vacuum chamber housing 812 has a chamber opening 812o, adjacent to which the plasma source, e.g., its outlet opening 108, is located. The chamber opening opens into the interior of the vacuum chamber housing 812 (also referred to as the housing interior). The transport path 111 can be arranged in the interior of the vacuum chamber housing 812.

[0078] An exemplary implementation of the chamber electrode 202 is disposed adjacent to the chamber opening 812o and / or is plate-shaped. The chamber electrode 202 further contactingly contacts a wall of the vacuum chamber housing 812 (also referred to as the housing wall).

[0079] An exemplary implementation of the radio frequency transmission device 110 (also referred to as RF transmission device 110) couples the chamber electrode 202 to the plasma source housing 102, e.g., connected in parallel to the vacuum chamber housing 812. Alternatively or additionally, the RF transmission device 110 extends through a through-opening in the vacuum chamber housing 812.

[0080] Clearly, the RF transmission device 110 reduces the impedance between the chamber electrode 202 and the plasma source housing 102. Therefore, the RF transmission device 110 and / or the chamber electrode 202 do not necessarily have to be galvanically separated from the plasma source housing 102, but can optionally also be ohmically coupled to them.

[0081] Fig. 2B illustrates a vacuum arrangement according to various embodiments 200b in a schematic diagram as an equivalent circuit diagram, preferably configured according to one of the embodiments 100a to 200a and / or Example 10.

[0082] The vacuum arrangement can implement multiple current paths that couple the chamber electrode 202 to the plasma source housing in parallel, of which a first current path is implemented by the plasma source housing 102 and has a first impedance R1, and of which a second current path is implemented by the transmission device 110 and has a second impedance R2. The first and second impedances can satisfy the following relationship, e.g., for a high frequency (e.g., the operating frequency): R2 <R1, z.B. R1 = 10 k R2, where k≥0 (e.g. k≥1, k≥2, k≥3 or k≥4) and / or k≤10.

[0083] Fig. 2C illustrates a vacuum arrangement according to various embodiments 200c in a schematic equivalent circuit diagram, preferably configured according to one of the embodiments 100a to 200b and / or Example 13.

[0084] An exemplary implementation of the gas separation channel (also referred to as a channel-shaped gas separation device) has two plate-shaped gas separation walls 204a, 204b, between which a gas separation gap 206 (illustratively a constriction) is formed, through which the transport path 111 extends. The gas separation gap 206 can gas-separate two regions of the chamber interior 812h of the vacuum chamber housing 812 from each other. One or more than one of the two gas separation walls 204a, 204b can be coupled to the plasma source housing 102 as a chamber electrode 202 by means of a transmission device 110 and thus operated as a chamber electrode.

[0085] An exemplary implementation of the vacuum arrangement has two gas separation channels, between which a vacuum region is arranged, adjacent to which a processing device (e.g., comprising the plasma source and optionally a coating device) is located (also referred to as a processing region). For example, the vacuum arrangement can have two processing regions, between which the gas separation channel is arranged and into which the gas separation gap 206 opens.

[0086] Fig. 3A illustrates a vacuum chamber arrangement 300a according to various embodiments in a schematic side view or cross-sectional view, preferably configured according to one of the embodiments 100a to 200b and / or according to Example 6 or Example 7.

[0087] An exemplary implementation of the transmission device 110 (preferably according to Example 7 and / or Example 9) comprises a copper rod 304, which is held by means of a vacuum feedthrough 302 arranged in a through-opening (also referred to as a wall opening) of the vacuum chamber housing 812 (e.g., a chamber wall 812w thereof). The copper rod 304 can extend through the vacuum feedthrough 302 and / or the chamber wall 812w. Furthermore, the transmission device 110 comprises two (e.g., series-connected) radio-frequency stranded wires (RF stranded wires), which are coupled to one another by means of the copper rod 304, a first RF stranded wire 306 being connected between the chamber electrode 202 and the copper rod 304, and a second RF stranded wire 308 being connected between the plasma source housing 102 and the copper rod 304.

[0088] An exemplary implementation of the RF strand comprises a plurality of metallic filaments (e.g., made of copper), each of which is optionally coated, e.g., with a dielectric (e.g., a dielectric polymer) and / or with silver. Each filament can, for example, consist of a copper wire. The number N of filaments per RF strand can, for example, be N≥10 k where k can be ≥0 (e.g., k≥1, k≥2, k≥3, or k≥4) and / or k≤10. The larger N, the lower the impedance of the RF stranded wire. Furthermore, the multiple filaments are interwoven or twisted, which reduces the impedance of the RF stranded wire.

[0089] At high frequency, an electric current flows essentially only at the surface of the filaments. For example, at a frequency of 10 MHz, the current density 20 µm below the surface is less than 37% of the current density at the outermost surface.

[0090] Fig. 3B illustrates a vacuum arrangement according to various embodiments 300b in a schematic equivalent circuit diagram, preferably configured according to one of the embodiments 100a to 300a and / or according to Example 6 or Example 7.

[0091] An exemplary implementation of the vacuum arrangement comprises several assemblies, e.g. two assemblies between which the transport path 111 is arranged, each assembly comprising: - a plasma source 150; - a gas partition wall 204a, 204b, which is configured as a chamber electrode 202; - an RF transmission device 110, which is connected between the plasma source housing 102 of the plasma source 150 and the gas separation wall 204a, e.g. parallel to the vacuum chamber housing 812.

[0092] An exemplary implementation of the plasma source 150 includes an electrical generator 402 configured to generate the operating frequency and supply it to the main electrode 106. The generator 402 is coupled to the plasma source housing 102, e.g., attached thereto, enabling a compact design.

[0093] Fig. 4A illustrates a vacuum chamber arrangement 400a according to various embodiments in a schematic cross-sectional perspective view, preferably configured according to one of embodiments 100a to 300b and / or according to Example 6 or Example 7. As explained herein, the grid electrode 112 may be or become disassembled to provide a gridless plasma source.

[0094] Fig. 4B illustrates a vacuum arrangement according to various embodiments 400b in a schematic detailed view of the coupling device 110, preferably configured according to one of the embodiments 100a to 400a and / or according to Example 6 or Example 7.

[0095] An exemplary implementation of the vacuum feedthrough 302 includes a flange 302f, which is penetrated by the wall opening 302o and / or which is sealed with a cover 302d. The cover 302d is monolithically connected to the copper rod 304.

[0096] An exemplary implementation of the transmission device 110 has, for each RF strand 306, a screw coupling 404 by means of which the RF strand 306 is coupled to the copper rod 304.

[0097] An exemplary implementation of the HF strand 306 is set up as a flat strand.

[0098] Fig. 5A illustrates a vacuum chamber arrangement 500a according to various embodiments in a schematic sectional plan view from the transport path, preferably configured according to any one of embodiments 100a to 400b and / or according to Example 21 and / or Example 22. It can be understood that the grid electrode 112 can be disassembled and / or omitted during operation of the plasma source.

[0099] An exemplary implementation of the grid electrode 112 includes a frame-shaped structure penetrated by a through-hole and a plurality of filaments forming a grid disposed in the through-hole.

[0100] Fig. 5B illustrates a vacuum arrangement according to various embodiments 500b in a schematic sectional detailed view of the transport device, preferably configured according to one of the embodiments 100a to 400b and / or according to Example 2.

[0101] An exemplary implementation of the transport device is configured as a turntable transport device, which has a plate-shaped substrate carrier (also referred to as a turntable) for transporting a substrate along a circular transport path. The turntable has a plurality of sections, each section of which is arranged in a receiving gap 770. Furthermore, the transport device, e.g., its substrate carrier holding device 790, has a mounting base 792 for each section, which provides the receiving gap 770. The transport device has, for example, a plurality of substrate carrier segments (not shown) that provide the turntable.

[0102] An exemplary implementation of the turntable is configured as a multi-part turntable whose substrate carrier segments 780 are shaped like circular ring segments (e.g., in the form of pie slices). The transport device comprises a rotor 720r, to which, for each substrate carrier segment, a mounting base 792 with a clamping jaw 770s, which forms the receiving gap 770, is coupled for mounting and aligning the substrate carrier segment. The mounting base 792 can, for example, be rotatably mounted, for example, by means of a rotary joint having a shaft. The rotary joint makes it easier to tilt and / or lift the substrate carrier, or more generally, to align it. Furthermore, additional screws can be provided to lock the resulting position of the rotary joint.

[0103] An exemplary implementation of the substrate carrier, e.g., the turntable, is arranged in the gas separation gap 206 and / or is transported through it.

[0104] An exemplary implementation of the substrate carrier holding device 790 includes a first ring 766 having a plurality of teeth for forming a Hirth toothing. Complementing this, the rotor, e.g., its hub, includes a second ring 768 (also referred to as a toothed ring) having a plurality of teeth for forming the Hirth toothing.

[0105] An exemplary implementation of the rotor is provided by a rotary union 720, whose stator 720s is attached to the vacuum chamber housing 712 (e.g., by means of screws) and whose rotor 720r is attached to the substrate carrier holding device 790 (e.g., by means of screws). Optionally, the substrate carrier holding device 790 can be coupled to the rotor 720r by means of Hirth gearing, which facilitates centering and torque transmission.

[0106] During operation, one substrate can be transported using the substrate carrier, e.g. per substrate carrier segment.

[0107] It can be understood that the aspects explained herein can also be used in a continuous flow system whose transport device has a plurality of transport rollers arranged one behind the other along the transport path.

[0108] In the following, various working examples are described which refer to what has been described previously and what is shown in the figures.

[0109] In Working Example 1, the grid electrode of the plasma source is omitted and / or disassembled during operation, e.g., when generating the plasma in the plasma generation chamber. Then, the grid mounting device can be exposed, e.g., exposed to the plasma. This increases service life and reduces costs, as well as increasing ease of maintenance.

[0110] In Working Example 2, the grid electrode of the plasma source is functionally replaced by an RF capacitor, which includes the chamber electrode and is configured to limit the spatial spread of the plasma near the plasma source. This prevents the RF field from leaving the plasma formation area and thereby spreading the plasma when the grid electrode is omitted and / or disassembled.

[0111] In Working Example 3, a grounded gas baffle is provided as the gas barrier, which is ohmically coupled to the plasma source housing via a stranded wire that provides a large surface area for RF transmission. The stranded wire is configured as an RF transmitter.

[0112] In working example 4, an electrical vacuum feedthrough (at least by means of a copper rod) is provided to connect two sections of the stranded wire.

[0113] In working example 5, a defined coupling and decoupling of the RF field is provided in the coating system, which also inhibits parasitic plasma formation.

Claims

[1] Vacuum arrangement, comprising: • a vacuum chamber housing (812); • a transport device for transporting a substrate along a transport path (111) within the vacuum chamber housing (812); • a plasma source (150) having a plasma source housing (102) in which a cavity (102h) is provided, the plasma source (150) being configured to form a plasma by means of the cavity (102h) to which the transport path (111) is exposed; • an electrode (202) arranged in the vacuum chamber housing (812) and adjacent to the plasma source (150); • a radio frequency transmission device (110) which ohmically couples the plasma source housing (102) to the electrode (202). [2] Vacuum arrangement according to claim 1, wherein the RF transmission device (110) comprises one or more than one electrical line, of which: • a first line is arranged in the vacuum chamber housing (812) and / or provided by means of an RF strand, and / or • of which a second electrical line is arranged outside the vacuum chamber housing (812) and / or is provided by means of an RF strand. [3] Vacuum arrangement according to one of claims 1 to 2, wherein the vacuum chamber housing (812) has a housing opening in which a vacuum feedthrough of the transmission device (110) is arranged. [4] Vacuum arrangement according to one of claims 1 to 3, wherein the vacuum feedthrough comprises a copper rod which extends through the housing opening and / or which ohmically couples two RF strands of the transmission device (110) to one another. [5] Vacuum arrangement according to one of claims 1 to 4, wherein the plasma source (150) has a mounting device which has a mounting surface facing the transport path (111) for mounting a grid electrode (112) and in which an opening is formed which opens into the cavity (102h). [6] Vacuum arrangement according to one of claims 1 to 5, further comprising: a gas separation channel having two gas separation walls between which the transport path (111) is arranged and of which one gas separation wall provides the electrode (202). [7] Vacuum arrangement according to one of claims 1 to 6, wherein an electrical impedance between the electrode (202) and the plasma source housing (102) provided by means of the transmission device (110) is smaller for a high frequency than an electrical impedance between the electrode (202) and the plasma source housing (102) provided by means of the vacuum chamber housing (812). [8] Vacuum arrangement according to one of claims 1 to 7, wherein the transfer device (110) is provided separately from the vacuum chamber housing (812). [9] A method for operating the vacuum arrangement according to any one of claims 1 to 8, the method comprising: • removing a grid electrode (112) which delimits the cavity (102h); • Forming a plasma in the cavity (102h) by means of the plasma source (150) when the grid electrode (112) is removed. [10] Using a wall, preferably a gas separation wall, which is arranged in a vacuum chamber housing (812), as an electrode (202) for a plasma source (150) which has a plasma source housing (102) in which a cavity (102h) is provided, wherein the plasma source is arranged to form a plasma by means of the cavity (102h), wherein the electrode (202) is ohmically coupled to the plasma source housing (102) by means of an RF transmission device (110).

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