Ion trap and method for carrying out a quantum computing process

Abstract

An ion trap (1) is provided for carrying out a quantum computing process, comprising the following: - a first layer (2), - a second layer (3) arranged above the first layer (2), - a spacer layer (4) arranged between the first layer (2) and the second layer (3), - a set of electrodes (5) arranged on the first layer (2) and / or the second layer (3), wherein the set of electrodes (5) comprises a first group of electrodes, a second group of electrodes and a third group of electrodes, and - a magnetic arrangement (6), wherein - the first group of electrodes defines a processing area (8) with a first capture axis, - the second group of electrodes defines an auxiliary area (9), - the third group of electrodes defines a shuttle area (10), - the processing area (8) is separated from the auxiliary area (9) by the shuttle area (10), and - the processing area (8) is surrounded by the first layer (2), the spacer layer (4) and the second layer (3) in a cross-section perpendicular to the first capture axis. Furthermore, a method for carrying out a quantum computing process using the ion trap (1) is provided.

Description

[0001] The present disclosure relates to an ion trap and a method for carrying out a quantum computing process.

[0002] Typically, the coherence time of magnetic field-sensitive electronic states of trapped ions, such as qubits, is limited. A major factor contributing to decoherence is drift in the positions of the trapped ions due to varying electric stray fields. For example, when a magnetic field gradient acts on the trapped ions, the positional drift causes a drift in the ion resonance frequency, which is essentially dephasing of the qubits if the drift is considered random. This drift of the trapped ions is associated with illuminating the ion trap with electromagnetic laser radiation from a laser, which can be used for qubit state initialization, detection, readout, and / or laser cooling.

[0003] In particular, the electromagnetic laser radiation can strike a surface of the ion trap and generate photoelectrons that can subsequently interact with at least some dielectric surfaces and / or contaminated electrode surfaces, leading to their charging. This charging can cause stray electric fields that lead to a drift in the positions of the trapped ions.

[0004] The task is to provide an ion trap to increase the coherence time for qubits and / or to reduce the drift of the trapped ions. Furthermore, a method for performing a quantum computing process using such an ion trap should be provided.

[0005] These objectives are achieved through the subject matter of the independent claims. Advantageous embodiments, implementations, and further developments are the subject matter of the respective dependent claims.

[0006] An ion trap for carrying out a quantum computing process is described. Specifically, the ion trap is designed to capture at least one ion. This ion is, in particular, a qubit, which represents a fundamental unit of information in a quantum computing process. For example, the ion trap is a processing unit of a quantum computer.

[0007] According to at least one embodiment, the ion trap comprises a first layer. For example, the first layer extends in a principal plane. The lateral directions are aligned parallel to the principal plane of the first layer. A vertical direction is aligned perpendicular to the principal plane of the first layer.

[0008] The first layer comprises a top surface that extends parallel to the lateral directions. This top surface is, for example, flat. "Flat" here and in the following means that the top surface is smooth and free of irregularities. Specifically, its root mean square (RMS) is at most 500 nm, at most 100 nm, or at most 50 nm.

[0009] The first layer is, for example, the first substrate of the ion trap. The first layer comprises, for example, a dielectric material, a semiconductor material such as silicon, and / or glass.

[0010] According to at least one embodiment, the ion trap comprises a second layer arranged above the first layer. For example, the second layer extends in a principal plane parallel to the lateral directions. The first layer and the second layer are spaced apart from each other in the vertical direction. In particular, the first layer and the second layer are stacked on top of each other in the vertical direction. For example, the first layer and the second layer overlap in lateral directions in a top view along the vertical direction, particularly in a congruent manner.

[0011] The second layer has a base surface running parallel to the lateral directions, with the base surface of the second layer opposite the top surface of the first layer. The base surface is, for example, flat. "Flat" here and in the following means that the base surface is smooth and free of irregularities. In particular, the root mean square (RMS) is at most 500 nm, at most 100 nm, or at most 50 nm.

[0012] The second layer is, for example, a second substrate of the ion trap. The second layer comprises, for example, a dielectric material, a semiconductor material such as silicon, and / or glass. For example, the material of the first layer is the same as or different from that of the second layer.

[0013] According to at least one embodiment, the ion trap comprises a spacer layer arranged between the first layer and the second layer. The spacer layer, for example, separates the first layer and the second layer from each other in a vertical direction.

[0014] The spacer layer is arranged, for example, in an edge region of the first layer, particularly on its top surface. The spacer layer is arranged, for example, in another edge region of the second layer, particularly on its bottom surface. The edge region surrounds, for example, a central region of the first layer. The other edge region surrounds, for example, another central region of the second layer. The edge region and the other edge region overlap, particularly in lateral directions in a top view along the vertical direction, and in particular, are congruent with each other. The central region and the other central region overlap, particularly in lateral directions in a top view along the vertical direction, and in particular, are congruent with each other. In particular, the central region and the other central region are each free of the spacer layer.

[0015] The spacer layer may consist of, for example, a dielectric material, a semiconductor material such as silicon, and / or glass. The material of the spacer layer may be the same as or different from that of the first layer and / or the second layer.

[0016] The thickness of the spacer layer in the vertical direction is, for example, at least 10 µm and at most 1000 µm.

[0017] According to at least one embodiment, the ion trap comprises a set of electrodes arranged on the first layer and / or the second layer, wherein the set of electrodes comprises a first group of electrodes, a second group of electrodes, and a third group of electrodes. In particular, at least some of the electrodes are arranged on the top surface of the first layer and / or on the bottom surface of the second layer.

[0018] The first group of electrodes is spaced apart from the second and third groups of electrodes, particularly in lateral directions. Furthermore, the second group of electrodes is spaced apart from the third group of electrodes, particularly in lateral directions.

[0019] The first group of electrodes is spaced apart from the second group of electrodes in lateral directions, for example by at least 1 mm and at most 50 mm.

[0020] The set of electrodes, in particular each electrode group, is configured, for example, to confine and / or manipulate the at least one ion within a specific region. For instance, each electrode group defines a corresponding region. This means that each electrode group is associated with a region. For example, a high-frequency voltage is applied to at least some electrodes of the set of electrodes, such as a specific group, so that a time-varying electric field is provided within the corresponding region, configured to confine and / or manipulate the at least one ion. For example, the at least one ion intersects a capture axis and / or oscillates around a capture axis within the respective region.

[0021] It is possible that the respective region comprises at least one quantum register with a multitude of ions. Therefore, each region is specifically designed to enclose at least one ion, for example, a multitude of ions. For example, at most 100 ions or at most 60 ions are provided in the respective region. For example, the enclosed ions form a corresponding quantum register.

[0022] According to at least one embodiment, the ion trap comprises a magnetic arrangement. In particular, the magnetic arrangement is configured to generate a magnetic field. For example, the ion trap comprises at least one magnetic arrangement for at least one region. Alternatively, the ion trap comprises at least one magnetic arrangement for at least some of the regions.

[0023] In particular, the magnetic arrangement is designed to create a magnetic field gradient in the respective area, e.g., along the respective capture axis. Preferably, the magnetic field of the magnetic arrangement has different magnitudes for different positions in the respective area and, in particular, for different positions on the respective capture axis.

[0024] Advantageously, when there is a large number of ions in the respective area, the resonance frequency of each of the ions on which the magnetic field gradient of the magnet arrangement acts is individual, and in particular different, for each ion in the respective area.

[0025] According to at least one embodiment of the ion trap, the first group of electrodes defines a processing area with a first capture axis. In particular, the magnetic field gradient of the magnetic arrangement of the first capture axis is provided, for example, exclusively for the first capture axis. The processing area is particularly characteristic of an area in which quantum operations, such as logic gates, are performed on at least one ion.

[0026] It is possible for the ion trap to include several additional first groups of electrodes, with each additional first group defining a further processing area. In this case, the magnetic field gradient of the magnetic array is provided in addition to each further processing area, for example, exclusively to the first capture axis and the further capture axes. The further processing areas can each have another first capture axis, with the first capture axis and at least some of the further first capture axes being parallel or oblique to each other. Additionally, at least some of the further first capture axes can be parallel or oblique to each other.

[0027] According to at least one embodiment of the ion trap, the second group of electrodes defines an auxiliary region. The auxiliary region has a second capture axis, which is, for example, spaced apart from the first capture axis. The auxiliary region is particularly characteristic of a region in which quantum operations, such as state preparation and / or measurement, are performed on at least one ion.

[0028] It is possible that the ion trap includes several further second groups of electrodes, with each further second group defining another auxiliary area.

[0029] According to at least one embodiment of the ion trap, the third group of electrodes defines a shuttle region. The shuttle region is particularly characteristic of a region in which the at least one ion is transported from the auxiliary region to the processing region and vice versa. The shuttle region has a third capture axis, wherein the third capture axis connects the first and second capture axes. The first, second, and third capture axes can be linearly aligned. Alternatively, there can be an angle in lateral directions between the first and second capture axes, between the first and third capture axes, and / or between the second and third capture axes.

[0030] It is possible that the ion trap includes several further third groups of electrodes, with each further third group defining another shuttle area.

[0031] According to at least one embodiment of the ion trap, the processing area is separated from the auxiliary area by the shuttle area. In particular, the first group of electrodes is separated from the second group of electrodes in lateral directions by the third group of electrodes.

[0032] According to at least one embodiment of the ion trap, the processing area is surrounded by the first layer, the spacer layer, and the second layer in a cross-section perpendicular to the first trapping axis. In particular, the cross-section is defined perpendicular to the principal extension plane of the first layer and the second layer, respectively.

[0033] For example, the processing area in cross-section is completely surrounded by the first layer, the spacer layer and the second layer, including any connecting layers between the first layer and the spacer layer and / or the second layer and the spacer layer.

[0034] A cover with a passage is arranged between the processing area and the auxiliary area. The cover has a principal extent plane that is perpendicular to the lateral directions and oblique to the first capture axis, in particular perpendicular to the first capture axis. The passage is designed such that the at least one ion can be transported from the processing area and the auxiliary area. Additionally or alternatively, another cover is arranged at an end region of the processing area facing away from the shuttle area. This additional cover has a principal extent plane that extends perpendicular to the lateral directions and perpendicular to the first capture axis.

[0035] The cover and / or the further cover can be made of the same material as the first layer, the second layer and / or the spacer layer.

[0036] This means that the processing area is completely covered by the first layer, the spacer layer and the second layer, as well as the cover and / or further cover, especially three-dimensionally, except for the passage.

[0037] Since the processing area is surrounded by the first layer, the spacer layer, and the second layer, the coherence time of the magnetic field-sensitive ions, particularly in the magnetic field gradient, is advantageously increased significantly compared to typical processing areas that are not surrounded. During the quantum operations, the ions are surrounded by the respective layers, which advantageously have external conductive surfaces, thus shielding them from stray electric fields, including laser-induced electric fields.

[0038] Since the processing area is separated from the auxiliary area, any electromagnetic laser radiation is directed primarily onto the auxiliary area, which is separated from the processing area by, for example, a few millimeters. This has the advantage that the influence of laser-induced varying electric stray fields is significantly reduced, thus increasing the coherence times of the ions.

[0039] According to at least one embodiment of the ion trap, an outer surface of the first layer, the spacer layer, and / or the second layer is at least partially covered with an electrically conductive coating. Each outer surface can be at least partially, and in particular completely, covered with the electrically conductive coating. For example, the outer surface faces away from the processing area. Alternatively or additionally, the outer surface faces the processing area, with the electrically conductive coating being formed at least partially from the electrodes of the first group.

[0040] In addition, the outer surfaces of the cover and / or the further cover facing away from the processing area are at least partially or completely covered by the electrically conductive coating.

[0041] The electrically conductive material is connected to a reference potential, for example. Advantageously, the electrically conductive material reduces the charge buildup on the insulating material.

[0042] According to at least one embodiment of the ion trap, the auxiliary region is formed by an initialization region and / or a detection region. The initialization region is configured to prepare the at least one ion in a well-defined, predetermined initial state, for example, a ground state. The preparation, i.e., the initialization, is carried out, for example, with electromagnetic radiation from a laser. The detection region is configured to measure the state of the at least one ion. For example, the measurement, i.e., the detection, is carried out with electromagnetic radiation from another laser.

[0043] For example, the auxiliary area is also designed for loading the at least one ion, in particular for capturing the at least one ion, and / or for cooling the at least one ion. For example, cooling is carried out using electromagnetic radiation from a cooling laser.

[0044] Advantageously, the at least one ion is shielded from electromagnetic radiation and the corresponding stray fields by the first layer, the spacer layer and the second layer surrounding the processing area.

[0045] According to at least one embodiment of the ion trap, the spacer layer does not overlap with the processing area, the auxiliary area, and the shuttle area in lateral directions when viewed from above. In particular, the spacer layer is arranged at a distance from the respective capture axis, e.g., in the edge regions.

[0046] According to at least one embodiment of the ion trap, the first layer and the second layer overlap in plan view with the processing area, the auxiliary area and the shuttle area in lateral directions.

[0047] According to at least one embodiment of the ion trap, the spacer layer has a through-hole that provides access to the auxiliary area. The through-hole extends completely through the spacer layer in a lateral direction, e.g., perpendicular to the second capture axis. The through-hole advantageously allows optical access to the auxiliary area.

[0048] According to at least one embodiment of the ion trap, the through-hole does not overlap with the processing area in lateral directions. For example, in a side view along a lateral direction perpendicular to the first capture axis, the through-hole does not overlap with the processing area.

[0049] For example, the through-hole does not overlap with the shuttle area in lateral directions, particularly in a side view along a lateral direction perpendicular to the third capture axis. This means that the through-hole in the spacer layer is positioned such that, in lateral directions, particularly in a side view along a lateral direction perpendicular to the second capture axis, it overlaps only with the auxiliary area.

[0050] According to at least one embodiment of the ion trap, the second layer has an opening that provides access to the auxiliary area. In particular, the opening extends completely through the second layer in a vertical direction. Advantageously, the opening provides further optical access to the auxiliary area.

[0051] According to at least one embodiment of the ion trap, the second layer comprises an integrated photodetector device. The integrated photodetector device is configured to measure the state of the at least one ion. In this embodiment, the second layer has no opening.

[0052] “Integrated” here and in the following means that at least one outer surface, in particular all outer surfaces except for the outer surface facing the auxiliary area, of the integrated photodetector device is covered by the second layer.

[0053] According to at least one embodiment of the ion trap, the opening does not overlap with the processing area in lateral directions.

[0054] According to at least one embodiment of the ion trap, the integrated photodetector device does not overlap with the processing area in lateral directions. For example, in a top view along the vertical direction, the opening or the integrated photodetector device does not overlap with the processing area in lateral directions.

[0055] For example, the opening or the integrated photodetector device does not overlap with the shuttle area in lateral directions, particularly in a top view along the vertical direction. This means that the opening or the integrated photodetector device in the second layer is designed such that it overlaps exclusively with the auxiliary area in lateral directions, particularly in a top view along the vertical direction.

[0056] According to at least one embodiment of the ion trap, the magnetic arrangement comprises at least one permanent magnet and / or at least one electromagnet. The at least one magnetic arrangement is, for example, spaced away from the processing area in lateral and / or vertical directions.

[0057] For example, a permanent magnet does not require an external magnetic field to maintain magnetic properties such as magnetization. Furthermore, a permanent magnet is specifically configured to provide the magnetic field without the need for an electric current. For example, an electromagnet includes at least one coil, which is specifically designed to provide the magnetic field when an electric current is applied to the coil.

[0058] For example, the magnetic arrangement is configured to provide the processing area, particularly along the first capture axis, with a magnetic field gradient of at least 0.5 T / m and at most 500 T / m. For example, the magnetic field gradient in the processing area, particularly along the first capture axis, is at least 50 T / m and at most 250 T / m, for example 150 T / m.

[0059] According to at least one embodiment of the ion trap, the magnetic arrangement is embedded in the first layer and / or the second layer. "Embedded" here and in the following means that at least one outer surface, in particular all outer surfaces, of the integrated photodetector device is covered by the first layer and / or the second layer.

[0060] According to at least one embodiment of the ion trap, the magnetic arrangement is located on the first layer and / or the second layer. For example, the magnetic arrangement can be located on the top surface of the first layer or on the bottom surface of the first layer. The magnetic arrangement can be located, for example, on the bottom surface of the second layer or on the top surface of the second layer.

[0061] It is possible that part of the magnetic arrangement is embedded in or arranged on the first layer, and another part of the magnetic arrangement is embedded in or arranged on the second layer. Alternatively, the entire magnetic arrangement is embedded in or arranged on the first layer, or the entire magnetic arrangement is embedded in or arranged on the second layer.

[0062] According to at least one embodiment, the ion trap comprises a microwave antenna. The microwave antenna is specifically configured to emit a microwave field that is made available to the ions for quantum computing. The microwave field is particularly characteristic of electromagnetic radiation with a frequency of at least 0.1 GHz and at most 500 GHz, and especially at least 0.3 GHz and at most 300 GHz.

[0063] In particular, quantum operations, such as logic gates, are performed on at least one ion through the microwave field.

[0064] According to at least one embodiment of the ion trap, the microwave antenna overlaps the processing area in lateral directions.

[0065] In a top view along the vertical direction, the microwave antenna overlaps, for example, the processing area in lateral directions. However, in a top view along the vertical direction, the microwave antenna does not overlap with the shuttle area and / or the auxiliary area in lateral directions.

[0066] According to at least one embodiment of the ion trap, the microwave antenna is embedded in the first layer and / or the second layer. "Embedded" here and in the following means that at least one outer surface, in particular all outer surfaces, of the microwave antenna is covered by the first layer and / or the second layer.

[0067] According to at least one embodiment of the ion trap, the microwave antenna is arranged on the first layer and / or the second layer. For example, the microwave antenna can be arranged on the top surface of the first layer or on the bottom surface of the first layer. The microwave antenna can, for example, be arranged on the bottom surface of the second layer or on the top surface of the second layer.

[0068] Furthermore, a method for carrying out a quantum computing process using the ion trap described above is provided. This means that the characteristics relating to the ion trap also apply to the method, and vice versa.

[0069] According to at least one embodiment of the method, at least one ion is initialized in the auxiliary area.

[0070] According to at least one embodiment of the method, the at least one initialized ion is transported via the shuttle area into the processing area.

[0071] According to at least one embodiment of the method, the at least one initialized ion is manipulated in the processing area. In particular, quantum operations are performed during the manipulation.

[0072] According to at least one embodiment of the method, the at least one manipulated ion is transported via the shuttle area into the auxiliary area.

[0073] According to at least one embodiment of the method, a state of the at least one manipulated ion is detected in the auxiliary area.

[0074] According to at least one embodiment of the method, the initialization is carried out by providing electromagnetic radiation from a laser to the at least one ion in the auxiliary area.

[0075] According to at least one embodiment of the method, the manipulation is carried out by applying a microwave field of a microwave antenna and by applying the magnetic field of the magnetic arrangement to the at least one initialized ion in the processing area.

[0076] According to at least one embodiment of the method, detection is carried out by providing further electromagnetic radiation from another laser or the laser to the at least one manipulated ion and by collecting a fluorescence of the same in the auxiliary area.

[0077] According to at least one embodiment of the method, the electromagnetic radiation of the laser is provided through the through-hole.

[0078] According to at least one embodiment of the method, the electromagnetic radiation of the laser is provided by an integrated waveguide.

[0079] According to at least one embodiment of the method, the further electromagnetic radiation of the further laser and / or the fluorescence is provided through the opening.

[0080] The ion trap and the quantum computer device are explained in more detail below with reference to exemplary embodiments and the associated figures.

[0081] Fig. Figure 1 shows a schematic view of the ion trap according to an exemplary embodiment.

[0082] Identical, similar, or similarly appearing elements in the figures are marked with the same reference symbols. The figures and the proportions of the elements depicted within them are not to be considered true to scale. Rather, individual elements may be exaggerated for better representation and / or clarity.

[0083] The ion trap 1 according to the embodiment of the Fig. The assembly comprises a first layer 2, a second layer 3 arranged above the first layer 2, and a spacer layer 4 arranged between the first layer 2 and the second layer 3. The first layer 2 and the second layer 3 each have a principal extension plane that runs parallel to lateral directions. The first layer 2, the spacer layer 4, and the second layer 3 are arranged one above the other parallel to a vertical direction that runs perpendicular to the lateral directions.

[0084] The first layer 2 is vertically spaced from the second layer 3 by the spacer layer 4. The spacer layer 4 is located only in one edge region of the first layer 2 and another edge region of the second layer 3. Thus, the first layer 2, the second layer 3, and the spacer layer 4 form a cavity in a central region. At least one ion 13 of the ion trap 1 is configured to be located within the cavity along a respective capture axis.

[0085] The ion trap 1 further comprises a set of electrodes 5 arranged on the first layer 2 and / or the second layer 3, wherein the set of electrodes 5 comprises a first group of electrodes, a second group of electrodes, and a third group of electrodes. The first group of electrodes defines a processing area 8 with a first capture axis, the second group of electrodes defines an auxiliary area 9 with a second capture axis, and the third group of electrodes defines a shuttle area 10 with a third capture axis. In particular, the respective areas with their respective capture axes are arranged within the cavity. Furthermore, the processing area 8 is spaced apart from the auxiliary area 9 by the shuttle area 10.

[0086] The spacer layer 4 has a through-hole 11 for providing access to the auxiliary area 9, and the second layer 3 has an opening 12 for providing access to the auxiliary area 9. The through-hole 11 and the opening 12 overlap exclusively with the auxiliary area 9, at least partially, and in particular completely. In contrast, the processing area 8 is surrounded in a cross-section perpendicular to the first capture axis, e.g., perpendicular to the lateral direction x, by the first layer 2, the spacer layer 4, and the second layer 3. Thus, during quantum operations in the processing area 8, the at least one ion 13 is surrounded by the respective layers, which advantageously have conductive surfaces in areas provided, e.g., by the electrodes, and are therefore shielded from any stray electrical fields, including laser-induced ones.

[0087] Fig. Figure 1 shows in particular a view of a section plane extending through the processing area 8 near the ion 13. The section plane is in particular perpendicular to the first capture axis.

[0088] A magnetic arrangement 6 and / or a microwave antenna 7 can be embedded in the first layer 2 and / or the second layer 3.

[0089] The process step S1 according to the exemplary embodiment of the Fig.Step 2 comprises the initialization of at least one ion 13 in the auxiliary area 9. After initialization, the at least one initialized ion 13 is transported in process step S2 via the shuttle area 10 to the processing area 8. In the processing area 8, the at least one initialized ion 13 is then manipulated in process step S3. Subsequently, the at least one manipulated ion 13 is transported back to the auxiliary area 9 via the shuttle area 10 in process step S4, and in process step S5, the state of the at least one manipulated ion 13 in the auxiliary area 9 is recorded.

[0090] The invention is not limited to the exemplary embodiments by its description. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes every combination of features in the claims, even if that feature or combination itself is not explicitly stated in the claims or exemplary embodiments. Reference sign 1 ion trap 2 first shift 3 second shift 4 spacer layer 5 electrodes 6 magnetic arrangement 7 Microwave antenna 8 Processing area 9 Auxiliary area 10 Shuttle area 11 Through hole 12 Opening 13 ions

Claims

Ion trap (1) for carrying out a quantum computing process, comprising: - a first layer (2), - a second layer (3) arranged above the first layer (2), - a spacer layer (4) arranged between the first layer (2) and the second layer (3), - a set of electrodes (5) arranged on the first layer (2) and / or the second layer (3), wherein the set of electrodes (5) comprises a first group of electrodes, a second group of electrodes, and a third group of electrodes, and - a magnetic arrangement (6), wherein: - the first group of electrodes defines a processing area (8) with a first capture axis, - the second group of electrodes defines an auxiliary area (9), - the third group of electrodes defines a shuttle area (10), - the processing area (8) is spaced from the auxiliary area (9) by the shuttle area (10), and - the processing area (8) is spaced from the first layer (2).the spacer layer (4) and the second layer (3) are surrounded in a cross-section perpendicular to the first capture axis. Ion trap (1) according to claim 1, wherein an outer surface of each of the first layer (2), the spacer layer (4) and / or the second layer (3) is at least partially covered with an electrically conductive coating. Ion trap (1) according to one of claims 1 to 2, wherein the auxiliary area (9) is formed by an initialization and / or detection area. Ion trap (1) according to one of claims 1 to 3, wherein - in plan view the spacer layer (4) does not overlap with the processing area (8), the auxiliary area (9) and the shuttle area (10) in lateral directions and - in plan view the first layer (2) and the second layer (3) overlap with the processing area (8), the auxiliary area (9) and the shuttle area (10) in lateral directions. Ion trap (1) according to one of claims 1 to 4, wherein the spacer layer (4) has a through hole (11) to provide access to the auxiliary area (9). Ion trap (1) according to claim 5, wherein the through-hole (11) does not overlap with the processing area (8) in lateral directions. Ion trap (1) according to one of claims 1 to 6, wherein the second layer (3) has an opening (12) to provide access to the auxiliary area (9), or the second layer (3) has an integrated photodetector device. Ion trap (1) according to claim 7, wherein the opening (12) does not overlap with the processing area (8) in lateral directions, or the integrated photodetector device does not overlap with the processing area (8) in lateral directions. Ion trap (1) according to one of claims 1 to 8, wherein the magnet arrangement (6) comprises at least one permanent magnet and / or at least one electromagnet. Ion trap (1) according to one of claims 1 to 9, wherein the magnetic arrangement (6) is embedded in the first layer (2) and / or the second layer (3), or the magnetic arrangement (6) is arranged on the first layer (2) and / or the second layer (3). Ion trap (1) according to one of claims 1 to 10, further comprising a microwave antenna (7), wherein the microwave antenna (7) overlaps the processing area (8) in lateral directions. Ion trap (1) according to claim 11, wherein the microwave antenna (7) is embedded in the first layer (2) and / or the second layer (3), or the microwave antenna (7) is arranged on the first layer (2) and / or the second layer (3). Method for carrying out a quantum computing process with the ion trap (1) according to one of claims 1 to 12, comprising: - initialization of at least one ion (13) in the auxiliary area (9), - transporting the at least one initialized ion (13) to the processing area (8) via the shuttle area (10), - manipulating the at least one initialized ion (13) in the processing area (8), - transporting the at least one manipulated ion (13) to the auxiliary area (9) via the shuttle area (10), and - detecting the state of the at least one manipulated ion (13) in the auxiliary area (9). The method according to claim 13, wherein: - initialization is carried out by providing electromagnetic radiation from a laser to the at least one ion (13) in the auxiliary area (9), - manipulation is carried out by applying a microwave field from a microwave antenna (7) and by applying the magnetic field of the magnet arrangement (6) to the at least one initialized ion in the processing area (8), and - detection is carried out by providing the at least one manipulated ion (13) with further electromagnetic radiation from another laser or the laser and collecting a fluorescence of the same in the auxiliary area (9). Method according to claim 14, wherein - the electromagnetic radiation of the laser is provided through the through-hole (11) according to claim 5, or - the electromagnetic radiation of the laser is provided through an integrated waveguide. Method according to claim 14 or 15, wherein the further electromagnetic radiation of the further laser and / or the fluorescence is provided through the opening (12) according to claim 7.

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