semiconductor device

Abstract

The semiconductor device (100) includes a substrate (1), a semiconductor element (3), a housing (4), a sealing resin (8), and a lid (10). The semiconductor element (3) is bonded onto the substrate (1). The housing (4) accommodates the substrate (1) and the semiconductor element (3). The sealing resin (8) seals the semiconductor element (3) in the housing (4). The lid (10) is arranged in the housing (4) and covers the sealing resin (8) from above. The lid (10) is made of both a resin material (11) and a metal material (12) mixed into the resin material (11).

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This non-provisional application is based on Japanese Patent Application No. 2024-033755 filed with the Japan Patent Office on March 6, 2024, the entire contents of which are hereby incorporated by reference. BACKGROUND OF THE INVENTIONField of the invention

[0002] The present disclosure relates to a semiconductor device. Description of the state of the art

[0003] When a power semiconductor module is in use, a large current flows through it, generating a large amount of heat. Therefore, it is important to improve the heat dissipation of the power semiconductor module. For example, Japanese Patent Application Laid-Open No. 2018-182220 discloses a technology for dissipating heat generated by semiconductor elements through a heat sink. SUMMARY OF THE INVENTION

[0004] As a power semiconductor module, a package-sealed semiconductor module and a mold-sealed semiconductor module can be specified. Generally, a package-sealed semiconductor module includes a sealing lid. The lid can prevent heat generated by the semiconductor element from dissipating to the outside. Japanese Patent Application Laid-Open No. 2018-182220 discloses a mold-sealed semiconductor module. However, Japanese Patent Application Laid-Open No. 2018-182220 does not propose a technology for improving the heat dissipation of a package-sealed semiconductor module.

[0005] The present disclosure was made to solve the above problem. An object of the present disclosure is to provide a package-sealed semiconductor device capable of improving heat dissipation.

[0006] A semiconductor device according to a first aspect of the present disclosure includes a substrate, a semiconductor element, a package, a sealing resin, and a lid. The semiconductor element is bonded to the substrate. The package accommodates the substrate and the semiconductor element. The sealing resin seals the semiconductor element in the package. The lid is disposed in the package and covers the sealing resin from above. The lid is made of both a resin material and a metal material mixed into the resin material.

[0007] A semiconductor device according to a second aspect of the present disclosure includes a substrate, a semiconductor element, a package, a sealing resin, and a lid. The semiconductor element is bonded onto the substrate. The package accommodates the substrate and the semiconductor element. The sealing resin seals the semiconductor element in the package. The lid is arranged in the package and covers the sealing resin from above. The lid contains a resin material and carbon fibers in a proportion of 10 mass % or more and 20 mass % or less of the entire lid.

[0008] A semiconductor device according to a third aspect of the present disclosure includes a substrate, a semiconductor element, a package, a sealing resin, and a lid. The semiconductor element is bonded onto the substrate. The package accommodates the substrate and the semiconductor element. The sealing resin seals the semiconductor element in the package. The lid is arranged in the package and covers the sealing resin from above. The main component of the lid is a resin material. The resin material includes a filler. The filler has a polarity, and the filler is arranged so that its molecules are aligned in a predetermined direction.

[0009] The above and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view illustrating a semiconductor device according to the present embodiment; Fig. Fig. 2 is a schematic cross-sectional view showing a step of arranging a lid in a manufacturing process of the semiconductor device of Fig. 1 illustrates; Fig. 3 is a schematic diagram illustrating a configuration of a lid according to the first embodiment; Fig. 4 is a schematic diagram illustrating a configuration of a lid according to a third embodiment; Fig. Fig. 5 is a schematic view illustrating a lid in the state of a raw material according to a fourth embodiment; and Fig. 6 is a schematic view illustrating a configuration of the lid after completion according to the fourth embodiment. DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment<Konfiguration der Halbleitervorrichtung>

[0010] Fig. 1 is a schematic cross-sectional view illustrating a semiconductor device according to the present embodiment. As shown in Fig. As illustrated in Figure 1, a semiconductor device 100 according to the present embodiment is a so-called power semiconductor module. The semiconductor device 100 includes a substrate 1. The substrate 1 includes a base 1a, an insulating layer 1b, and an electrode plate 1c. The insulating layer 1b is stacked on the base 1a. The electrode plate 1c is stacked on the insulating layer 1b.

[0011] The base 1a has, for example, a rectangular planar shape and has a substantially constant thickness in the vertical direction in Fig. 1. Hereinafter, such a shape is referred to as a flat plate shape. The base 1a is made of metal. For example, the base 1a is made of copper or aluminum. The insulating layer 1b has a flat plate shape. The insulating layer 1b is made of a resin material or a ceramic material. Specifically, the ceramic material for the insulating layer 1b can be, for example, one of aluminum oxide (Al2O3), aluminum nitride (AlN), and silicon nitride (Si3N4). The insulating layer 1b can be an insulating substrate. The electrode plate 1c is made of, for example, copper or aluminum. The electrode plate 1c has a flat plate shape. The electrode plate 1c serves as a circuit pattern. The electrode plate 1c can be connected to the insulating layer 1b by soldering.

[0012] A semiconductor chip 3 is connected as a semiconductor element on the substrate 1. The semiconductor chip 3 is smaller than the substrate 1 in plan view. Thus, a plurality of semiconductor chips 3 are spaced apart and connected on the substrate 1. The semiconductor chip 3 has a flat plate shape. The semiconductor chip 3 is mounted on the substrate 1, and in particular on the electrode plate 1c, by soldering. The semiconductor chip 3 is an IGBT (Insulated Gate Bipolar Transistor) chip or a diode chip.

[0013] The substrate 1 and the semiconductor chip 3 are housed in a case 4. The case 4 is arranged to surround the substrate 1 and the semiconductor chip 3 in plan view. The case 4 is made of an insulating material with high mechanical strength and high insulating property. The case 4 is made of a well-known PPS (polyphenylene sulfide resin) or liquid crystal polymer. At least a part of the substrate 1 (for example, the insulating layer 1b and the electrode plate 1c) is housed in the case 4. However, the lower surface (opposite the surface to which the insulating layer 1b is bonded) of the base 1a of the substrate 1 may be exposed from the case 4.

[0014] A terminal 5 may be arranged in the housing 4. The terminal 5 is spaced from the semiconductor chip 3. The terminal 5 is made of copper, a copper alloy, or the like. The terminal 5 includes a first portion 5a and a second portion 5b. The first portion 5a is received in the housing 4. The second portion 5b is arranged to protrude to the outside of the housing 4. In other words, the terminal 5 extends from the inside of the housing 4 to the outside thereof. Thus, the terminal 5 electrically connects the semiconductor device 100 to an external device.

[0015] A pad 6 is formed on a part of an inner wall surface of the housing 4 closer to the substrate 1 or the like accommodated in the housing. As shown in Fig. As illustrated in Figure 1, for example, when the inner wall surface of the housing 4 has a step, the pad 6 may be formed on a portion of the step extending in the horizontal direction. The pad 6 is a thin film made of a conductive material such as copper or aluminum.

[0016] A plurality of wires 7 are bonded to an upper surface of the semiconductor chip 3. The wire 7 is made of gold, silver, copper, or aluminum. The wire 7 electrically connects the plurality of semiconductor chips 3 to each other. The wire 7 electrically connects a semiconductor chip 3 to the first portion 5a. The wire 7 can electrically connect a semiconductor chip 3 to the pad 6. The wire 7 can electrically connect the electrode plate 1c to the first portion 5a.

[0017] The semiconductor chip 3 is sealed in the housing 4 by a sealing resin 8. The sealing resin 8 is, for example, an epoxy resin. In addition to the semiconductor chip 3, the sealing resin 8 seals the insulating layer 1b, the electrode plate 1c, and the first portion 5a of the terminal 5 of the substrate 1. At least a portion of the terminal 5 is embedded in the sealing resin 8.

[0018] A cover 10 is arranged in the housing 4. The cover 10 covers the sealing resin 8 from above. In other words, the cover 10 is arranged to contact an upper surface of the sealing resin 8. The cover 10 has a flat plate shape. A portion of the cover 10 may be provided with a through-hole through which the terminal 5 can pass.

[0019] Fig. Fig. 2 is a schematic cross-sectional view showing a step of arranging a lid in a manufacturing process of the semiconductor device of Fig. 1. As in Fig. 2, in the manufacturing process of the semiconductor device 100 of Fig. 1, the following steps are performed. The insulating layer 1b is bonded to the base 1a by a bonding material. “Bound to the base 1a” means “bonded to a main surface, ie, an upper surface of the base 1a.” The same applies to the following description. The electrode plate 1c is bonded to the insulating layer 1b by a bonding material, such as solder. A plurality of semiconductor chips 3 are spaced apart from each other and bonded to the electrode plate 1c by solder. As described above, the semiconductor chips 3 are bonded to the substrate 1 and housed in the package 4. As shown in Fig. 2, after the terminals 5 have been installed in the housing 4, the sealing resin 8 is injected into the housing 4. At this time, the sealing resin 8 is in a liquid state and is not solidified.

[0020] After the sealing resin 8 is injected, the cover 10 is mounted on the sealing resin 8 in the housing 4. After the cover 10 is mounted, the sealing resin 8 is heated and cured. Thus, the cover 10 and the sealing resin 8 are integrated.

[0021] Fig. 3 is a schematic diagram illustrating a configuration of a lid according to the first embodiment. As shown in Fig. As illustrated in Figure 3, the lid 10 according to the present embodiment is made of both a resin material 11 and a metal material 12. The metal material 12 is mixed into the resin material 11. The lid 10 is mainly made of the resin material 11. In other words, the shape of the lid 10 is formed by the resin material 11. The resin material 11 is, for example, PPS (polyphenylene sulfide resin). The metal material 12 is evenly mixed into the resin material 11 that forms the lid 10. As shown in Fig. 3, the metal material 12 may, for example, be in the form of fine fibers extending in the left-right direction. However, the metal material 12 is not limited to the Fig. 3 and may, for example, be in the form of fine fibers extending in the vertical direction or an oblique direction in the drawing. The metal material 12 may be arranged so as to extend along the thickness direction of the lid 10 (perpendicular to the paper surface of Fig. 3). The extension direction of the metal materials 12 may be different for each metal material 12. A portion of the plurality of metal materials 12 may be in contact with each other. Alternatively, the metal material 12 may be fine grains or spheres. If the metal materials 12 are localized in a partial area of ​​the resin material 11, stress concentration occurs in the partial area when the lid 10 is heat-deformed. This may cause cracking or breakage to occur in the lid 10. From the perspective of suppressing this problem, the metal materials 12 are preferably distributed (dispersed) evenly throughout the lid 10. Although Fig. 3 illustrates that the extending direction of the plurality of fibrous metal materials 12 is aligned in one direction, the extending directions of the plurality of metal materials 12 may be different from each other.

[0022] In the manufacturing process of the lid 10 with the Fig. In the configuration illustrated in Figure 3, the resin material 11 and the metal material 12 are mixed so that the metal material 12 is embedded in the resin material 11. Any conventionally known method can be used to mix the resin material 11 and the metal material 12. Thereafter, the resin material 11 containing the metal material 12 is molded. Thus, the lid 10 is obtained. Thus, as shown in Fig. 3 illustrates, a large number of fine metal materials 12 are spaced apart from each other and uniformly dispersed in the resin material 11.

[0023] The fact that the lid 10 contains the resin material 11 and the metal material 12 can be confirmed by the following method. First, the lid 10 is pulverized. The substances contained in the resulting powder can be measured by any well-known method. The well-known method may include, for example, infrared spectroscopy and differential scanning calorimetry. Alternatively, the substances contained in the powder can be qualitatively and quantitatively evaluated by a nuclear magnetic resonance method. <wirkungen>

[0024] The semiconductor device 100 according to the present embodiment includes a substrate 1, a semiconductor chip 3, a package 4, a sealing resin 8, and a lid 10. The semiconductor chip 3 is bonded to the substrate 1. The package 4 accommodates the substrate 1 and the semiconductor chip 3. The sealing resin 8 seals the semiconductor chip 3 in the package 4. The lid 10 is arranged in the package 4 and covers the sealing resin 8 from above. The lid 10 is made of both a resin material 11 and a metal material 12 mixed into the resin material 11.

[0025] Generally, the metal material 12 has a higher thermal conductivity than the resin material 11, such as PPS. For example, the thermal conductivity of PPS is 0.29 W / (m·K). On the other hand, the thermal conductivity of aluminum, for example, is 226 W / (m·K). Therefore, the thermal conductivity of a lid 10 containing the metal material 12 is higher than that of a lid 10 containing only the resin material 11. Thus, in a power semiconductor module as an example of the package-sealed semiconductor device 100, heat generated by the semiconductor chip 3 can be efficiently dissipated to the outside through the lid 10. In other words, the heat dissipation of the entire semiconductor device 100 can be improved.

[0026] In the manufacturing method of the present embodiment, after the lid 10 is mounted on the liquid sealing resin 8, the sealing resin 8 is heated and cured. Thus, the lid 10 and the sealing resin 8 are integrated. By integrating the lid 10 and the sealing resin 8, heat generated by the semiconductor chip 3 can be efficiently dissipated to the outside through the sealing resin 8 and the lid 10. Second embodiment

[0027] In each of the following embodiments, the difference from the first embodiment will be mainly described. In other words, in each of the following embodiments, the features such as the configuration, material, manufacturing method, and evaluation method that are similar to those of the first embodiment are not repeated in principle. <Konfiguration der Halbleitervorrichtung>

[0028] The lid 10 of the semiconductor device 100 according to the present embodiment has a configuration in which the metal material 12 is mixed into the resin material 11, which is the same as that in the first embodiment. However, in the present embodiment, the lid 10 contains at least one of copper and aluminum in a proportion of 10 mass% or more and 30 mass% or less of the entire lid 10. "10 mass% or more and 30 mass% or less of the entire lid 10" means 10 mass% or more and 30 mass% or less when the entire lid 10 is set to 100 mass%.

[0029] Any of copper and aluminum may be contained in the entire lid 10 in a proportion of 10 mass% or more and 30 mass% or less. Alternatively, both copper and aluminum may be contained in the lid 10, as long as the total amount thereof is 10 mass% or more and 30 mass% or less of the entire lid 10.

[0030] The manufacturing process of the lid 10 according to the present embodiment is the same as that of the first embodiment. Specifically, the resin material 11 and the metal material 12 are mixed. The mass of one of copper and aluminum, or the total mass of both, is adjusted to be 10 mass% or more and 30 mass% or less with respect to the mass of the entire lid 10. The mixed material is then molded. < Effects>

[0031] In the semiconductor device 100 according to the present embodiment, the lid 10 may contain at least one of copper and aluminum in a proportion of 10 mass % or more and 30 mass % or less of the entire lid 10. Accordingly, the same effects as those of the first embodiment can be obtained. By containing the above-described materials, the lid 10 can be manufactured to have sufficient heat dissipation. In addition, by containing the above-described materials in the above-described proportion, the lid 10 can be manufactured to have sufficient heat dissipation at a low cost. In particular, according to the present embodiment, the thermal conductivity of the lid can be improved by about 4 to 5 times compared to a lid made of only the resin material 11 and having the same shape and size. Third embodiment<Konfiguration der Halbleitervorrichtung>

[0032] Fig. Fig. 4 is a schematic diagram illustrating a configuration of a lid according to a third embodiment. As shown in Fig. As illustrated in Figure 4, the lid 10 of the present embodiment includes a resin material 11 and carbon fibers 13. The lid 10 of the present embodiment may or may not include the metal material 12 of the first and second embodiments. The carbon fibers 13 are included in a proportion of 10 mass% or more and 20 mass% or less of the entire lid 10.

[0033] The manufacturing process of the lid 10 of the present embodiment is the same as that of the first and second embodiments. In other words, the resin material 11 and the carbon fibers 13 are mixed as raw materials before molding. The fine carbon fibers 13 are mixed by the mass ratio described above. Thereafter, the resin material 11 is molded. Thus, the lid 10 is obtained. As a result, as shown in Fig. 4, a large number of fine carbon fibers 13 are spaced apart and evenly dispersed in the resin material 11. As shown in Fig. 4, the carbon fibers 13 may, for example, be in the form of fine fibers extending in the left-right direction. However, the carbon fibers 13 are not limited to the Fig. 4 and may, for example, be fine fibers extending in the vertical direction or an oblique direction in the drawing. The carbon fibers 13 may be arranged so that they extend along the thickness direction of the lid 10 (perpendicular to the paper surface of Fig. 4). Alternatively, the extension direction of the short carbon fibers 13 may be different for each carbon fiber 13. A portion of the plurality of carbon fibers 13 may be in contact with each other. < Effects>

[0034] The semiconductor device 100 according to the present embodiment includes a substrate 1, a semiconductor chip 3, a package 4, a sealing resin 8, and a lid 10. The semiconductor chip 3 is bonded to the substrate 1. The package 4 accommodates the substrate 1 and the semiconductor chip 3. The sealing resin 8 seals the semiconductor chip 3 in the package 4. The lid 10 is arranged in the package 4 and covers the sealing resin 8 from above. The lid 10 includes a resin material 11 and carbon fibers 13 in a proportion of 10 mass% or more and 20 mass% or less of the entire lid 10.

[0035] The carbon fibers 13 have a higher thermal conductivity than the resin material 11. The thermal conductivity of PPS is 0.29 W / (m·K). On the other hand, the thermal conductivity of the carbon fibers 13 is 900 W / (m·K). Therefore, a lid 10 containing the carbon fibers 13 has a higher thermal conductivity than a lid 10 containing only the resin material 11. Therefore, the thermal conductivity of the lid 10 can be remarkably improved by including the carbon fibers 13.

[0036] However, the carbon fibers 13 are likely to break when a large load is applied. Such a load may be caused by a difference in the linear expansion coefficient between the resin material 11 and the carbon fibers 13. It is preferable to limit the load caused by such a difference in the linear expansion coefficient to a level at which the carbon fibers 13 do not break. Therefore, it is preferable to appropriately control the content of the carbon fibers 13 with respect to the resin material 11. As described above, by including the carbon fibers 13, the lid 10 can be made to have sufficient heat dissipation.In addition, by including the carbon fibers 13 in the above-described proportion, the lid 10 can be made to have sufficient heat dissipation and can withstand a load caused by a difference in the linear expansion coefficient. Specifically, according to the present embodiment, the thermal conductivity of the lid can be improved by about 300 to 600 times compared to a lid made of only the resin material 11 and having the same shape and size. Fourth embodiment<Konfiguration der Halbleitervorrichtung>

[0037] Fig. 5 is a schematic view illustrating a lid according to the fourth embodiment in the state of a raw material. As shown in Fig. As illustrated in Figure 5, the main component of the lid 10 of the present embodiment is a resin material 11. In the lid 10 of the present embodiment, the resin material 11 includes a filler 14. The filler 14 contains a polymer compound as a main component. The filler 14 has a polarity. The lid 10 of the present embodiment may or may not include the metal material 12 of the first and second embodiments.

[0038] In Fig. 5, each of the plurality of fillers 14 is a fine fiber extending in one direction. In Fig. 5, the plurality of fillers 14 extend randomly in completely different directions. Fig. Fig. 6 is a schematic view illustrating a lid after completion according to the fourth embodiment. In the Fig. In the raw material state illustrated in Figure 5, an external force is applied to the plurality of fillers 14 dispersed in the resin material 11. This changes the orientation of the plurality of fillers 14 in the resin material 11. The external force is an electric field, a magnetic field, or the like. By applying an external force to the resin material 11 during molding of the resin material 11, the fillers 14 are arranged in the lid 10 so that their molecules are aligned in a predetermined direction, as shown in Fig. 6 illustrates.

[0039] In Fig. 6, the fillers 14 are arranged so as to extend substantially in the left-right direction. However, the fillers 14 are not limited to the Fig. 6 and may, for example, be regularly arranged to extend in an oblique direction, as in Fig. 6. The fillers 14 may be arranged so that they extend along the thickness direction of the lid 10 (perpendicular to the paper surface of Fig. 6). In the Fig. In the state illustrated in Figure 6, a large number of fine fillers 14 are spaced apart from each other and uniformly dispersed in the resin material 11. A portion of the plurality of fillers 14 may be in contact with each other.

[0040] In the manufacturing process of the lid 10 of the present embodiment, a resin material 11 containing a small amount of polar fillers 14 may be prepared. If the resin material 11 does not contain the polar fillers 14, a small amount of the polar fillers 14 may be added to the resin material 11. Next, if the fillers 14 have anisotropy with respect to a magnetic field, an electric field, or the like, an external force is applied to the fillers 14. As a result, the molecules of the fillers 14 are aligned in a predetermined direction by the external force. The resin material 11 is cured while the external force is maintained. As a result, as shown in Fig. 6, the lid 10 is formed in which the molecules are aligned in a predetermined direction. < Effects>

[0041] The semiconductor device 100 according to the present embodiment includes a substrate 1, a semiconductor chip 3, a package 4, a sealing resin 8, and a lid 10. The semiconductor chip 3 is bonded on the substrate 1. The package 4 accommodates the substrate 1 and the semiconductor chip 3. The sealing resin 8 seals the semiconductor chip 3 in the package 4. The lid 10 is arranged in the package 4 and covers the sealing resin 8 from above. The main component of the lid 10 is a resin material 11. The resin material 11 includes a filler 14. The filler 14 has a polarity, and the filler 14 is arranged so that its molecules are aligned in a predetermined direction.

[0042] The higher the degree of alignment of the molecules of the filler 14, the higher the thermal conductivity of the lid 10. Therefore, the heat dissipation of the entire semiconductor device 100 can be improved. From this perspective, the angular deviation in the extension direction of each filler 14 included in the lid 10 is preferably 15° or less, and more preferably 10° or less. Further, the angular deviation is even more preferably 5° or less.

[0043] When the lid 10 is formed so that the molecules of the filler 14 are aligned in a predetermined direction, as shown in Fig. As illustrated in Figure 6, the thermal conductivity of the lid can be improved by about 4 to 6 times compared to a lid in which the filler molecules are randomly aligned. Fifth embodiment<Konfiguration der Halbleitervorrichtung>

[0044] In the fourth embodiment, polyparaphenylene benzobisoxazole fibers (hereinafter referred to as PBO fibers) are used as the filler 14 in the lid 10. In the lid 10, the PBO fibers are contained in a proportion of 1 mass % or more and 4 mass % or less of the entire lid 10. In other words, the lid 10 is configured to contain the filler 14 in a proportion of 1 mass % or more and 4 mass % or less when the entire lid 10 is set to 100 mass %.

[0045] In the present embodiment, the filler 14 contained in the resin material 11 is preferably a liquid crystal polymer having a property of responding to an electric field or a magnetic field before being cured to form the lid 10. Therefore, any material other than the PBO fibers can be used as the filler 14. In other words, the filler 14 can be either p-phenylene terephthalamide or m-phenylene isophthalamide. In the case of either p-phenylene terephthalamide or m-phenylene isophthalamide, the filler 14 can be 1 mass% or more and 4 mass% or less of the entire lid 10.

[0046] The manufacturing process of the lid 10 of the present embodiment is essentially the same as that of the fourth embodiment. For example, when using PBO fibers, the resin material 11 is prepared to contain a predetermined proportion of PBO fibers. The PBO fibers have the property of changing orientation in response to a magnetic field. By utilizing this property, a magnetic field is applied to the resin material 11 in a liquid state. The resin material 11 is molded while maintaining the magnetic field. <wirkungen>

[0047] As described above, the semiconductor device 100 according to the present embodiment may contain PBO fibers as the filler 14 in a proportion of 1 mass % or more and 4 mass % or less of the entire lid 10. Thus, as in the fourth embodiment, the molecules of the PBO fibers (the filler 14) are aligned in a predetermined direction, which improves the thermal conductivity of the lid 10. By increasing the degree of alignment of the molecules of the PBO fibers, the thermal conductivity of the lid can be improved by about 2 to 5 times compared to a lid made of only the resin material 11 and having the same shape and size.

[0048] By incorporating PBO fibers into the cover 10, the cover 10 can be manufactured to have sufficient heat dissipation. In addition, by incorporating PBO fibers in the above-described proportion, the cover 10 can be manufactured to have sufficient heat dissipation at a low cost.

[0049] The configurations included in (each example included in) each embodiment described above can be reasonably combined as long as they do not technically contradict each other.

[0050] Although the embodiments of the present invention have been described, it is to be understood that the embodiments disclosed herein are in all respects illustrative and not restrictive. It is intended that the scope of the present invention not be limited to the above description, but be defined by the scope of the claims and include all modifications that come within the meaning and scope of the claims. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] JP 2018-182220 [0003, 0004]< / wirkungen> < / wirkungen>

Claims

[1] A semiconductor device (100) comprising: a substrate (1); a semiconductor element (3) connected on the substrate (1); a housing (4) which accommodates the substrate (1) and the semiconductor element (3); a sealing resin (8) which seals the semiconductor element (3) in the housing (4); and a cover (10) arranged in the housing (4) and covering the sealing resin (8) from above, wherein the lid (10) is made of both a resin material (11) and a metal material (12) mixed into the resin material (11). [2] The semiconductor device (100) according to claim 1, wherein the lid (10) contains at least one of copper and aluminum in a proportion of 10 mass% or more and 30 mass% or less of the entire lid (10). [3] A semiconductor device (100) comprising: a substrate (1); a semiconductor element (3) connected on the substrate (1); a housing (4) which accommodates the substrate (1) and the semiconductor element (3); a sealing resin (8) which seals the semiconductor element (3) in the housing (4); and a cover (10) arranged in the housing (4) and covering the sealing resin (8) from above, wherein the lid (10) contains a resin material (11) and carbon fibers (13) in a proportion of 10 mass% or more and 20 mass% or less of the entire lid (10). [4] A semiconductor device (100) comprising: a substrate (1); a semiconductor element (3) connected on the substrate (1); a housing (4) which accommodates the substrate (1) and the semiconductor element (3); a sealing resin (8) which seals the semiconductor element (3) in the housing (4); and a cover (10) arranged in the housing (4) and covering the sealing resin (8) from above, wherein the main component of the lid (10) is a resin material (11), wherein the resin material (11) contains a filler (14), wherein the filler (14) has a polarity, and the filler (14) is arranged such that its molecules are aligned in a predetermined direction. [5] A semiconductor device according to claim 4, wherein the filler (14) contains polyparaphenylenebenzobisoxazole fibers in a proportion of 1 mass% or more and 4 mass% or less of the entire lid (10).

Images