METHOD FOR PRODUCING A NANOPRÄGELITHOGRAPH REPLICA MOLD, A NANOPRÄGELITHOGRAPH REPLICA AND A SEMICONDUCTOR DEVICE

Abstract

A process for fabricating a nano-embossed lithography replica comprises depositing a first resist layer over a substrate and selectively irradiating the first resist layer with actinic radiation. The selectively irradiated first resist layer is developed to create a structure within the first resist layer. The structure in the first resist layer is extended into the substrate to create a shape within the substrate. The first resist layer is removed from the substrate. A second resist layer is deposited over a replica blank. The second resist layer is brought into contact with the shape. The second resist layer is irradiated with actinic radiation. The shape and the irradiated second resist layer are separated. A structure is fabricated within the irradiated second resist layer.The structure in the second resist layer is extended into the replica blank, and the second resist layer is removed from the replica blank to produce a replica.

Description

RELATED REGISTRATION

[0001] This application claims priority over preliminary US patent application No. 63 / 698,327, filed on September 24, 2024, which is incorporated by reference into the present application. BACKGROUND

[0002] Photolithographic processes are among the most important processes in semiconductor manufacturing. Photolithographic methods include ultraviolet lithography, deep ultraviolet lithography, and extreme ultraviolet lithography (EUVL). While photolithographic methods, such as EUVL, provide high-resolution structures, they are very expensive. Reducing lithography costs is desirable. Nanoimprint lithography is proposed as a more cost-effective alternative to EUVL. However, nanoimprint lithography may be subject to limitations regarding critical dimensions and problems with defect detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0003] Aspects of this disclosure are best understood with reference to the following detailed description in conjunction with the accompanying drawings. It should be noted that, in accordance with industry practice, various features are not shown to scale. In fact, the dimensions of the various features may have been arbitrarily enlarged or reduced for the sake of clarity. Fig. Figure 1 shows a process stage of a sequential operation according to an embodiment of the disclosure. Fig. Figure 2 shows a process stage of a sequential operation according to an embodiment of the disclosure. The Fig. 3A and Fig. Figure 3B shows process steps of a sequential operation according to embodiments of the disclosure. Fig. Figure 4 shows a process stage of a sequential operation according to an embodiment of the disclosure. Fig. Figure 5 shows a process stage of a sequential operation according to an embodiment of the disclosure. Fig. Figure 6 shows a process stage of a sequential operation according to an embodiment of the disclosure. The Fig. 7A, Fig. 7B, Fig. 7C, Fig. 7D, Fig. 7E and Fig. Figure 7F shows process steps of a sequential operation according to an embodiment of the disclosure. The Fig. 8A, Fig. 8B, Fig. 8C, Fig. 8D and Fig. Figure 8E shows process steps of a sequential operation according to one embodiment of the disclosure. The Fig. 9A, Fig. 9B and Fig. Figure 9C shows process steps of a form structuring according to an embodiment of the disclosure. Fig. 9D, Fig. 9E, Fig. 9F, Fig. 9G and Fig. 9H show process stages of a shape structuring according to an embodiment of the disclosure. The Fig. 10A, Fig. 10B, Fig. 10C and Fig. Figure 10D shows process stages of a shape structuring according to an embodiment of the disclosure. The Fig. 11A, Fig. 11B, and Fig. Figure 11C shows process steps of a transfer and correction of overlay distortion during optical exposure in the molds according to an embodiment of the disclosure. The Fig. 12A and Fig. Figure 12B shows process steps for improving the uniformity of the critical dimensions of mold structures according to an embodiment of the disclosure. Fig. Figure 13 shows a sectional view of a nano-embossing lithography mask according to embodiments of the present disclosure. The Fig. 14A and Fig. Figure 14B shows a plan view or a sectional view of a semiconductor device manufacturing operation using a nanoimprint lithography mask according to embodiments of the present disclosure. The Fig. 15A and Fig. Figure 15B shows a plan view or a sectional view of a semiconductor device manufacturing operation using a nanoimprint lithography mask according to embodiments of the present disclosure. The Fig. 16A, Fig. 16B, Fig. 16C, Fig. 16D, Fig. 16E, Fig. 16F and Fig. Figure 16G schematically represent sequential operations for the fabrication of a semiconductor device according to embodiments of the disclosure. The Fig. 17A, Fig. 17B, Fig. 17C, Fig. 17D, Fig. 17E, Fig. 17F, Fig. 17G and Fig. Figure 17H ​​schematically represents sequential operations for the fabrication of a semiconductor device according to embodiments of the disclosure. The Fig. 18A and Fig. Figure 18B shows a control unit that controls various operations of the manufacture of a semiconductor device according to embodiments of the disclosure. Fig. Figure 19 shows a flowchart of a process for producing a nano-embossed lithography replica according to embodiments of the present disclosure. Fig. Figure 20 shows a flowchart of a process for producing a nano-embossed lithography replica according to embodiments of the present disclosure. Fig. Figure 21 shows a flowchart of a method for manufacturing a semiconductor device according to embodiments of the present disclosure. Fig. Figure 22 shows a flowchart of a process for producing a nano-embossed lithography replica according to embodiments of the present disclosure. Fig. Figure 23 shows a flowchart of a method for manufacturing a semiconductor device according to embodiments of the present disclosure. Fig. Figure 24 shows a flowchart of a method for manufacturing a semiconductor device according to embodiments of the present disclosure. DETAILED DESCRIPTION

[0004] It is understood that the following disclosure provides many different embodiments or examples for implementing various features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the fabrication of a first element over or on top of a second element in the following description may include embodiments in which the first and second elements are fabricated in direct contact, and it may also include embodiments in which additional elements can be fabricated between the first and second elements, such that the first and second elements are not in direct contact. For the sake of simplicity and clarity, various elements may be drawn at any number of different scales.

[0005] Furthermore, spatially relative terms, such as "located below," "under," "lower," "located above," "upper," and the like, can be used here to simply describe the relationship of an element or structure to one or more other elements or structures depicted in the figures. These spatially relative terms are intended to encompass orientations of the device in use or operation beyond the orientation shown in the figures. The device may be oriented differently (rotated 90 degrees or in a different orientation), and the spatially relative descriptors used here can be interpreted accordingly. Additionally, the term "made of" can mean either "has features" or "consists of."In the present disclosure, the phrase “one of A, B and C” means “A, B and / or C” (A, B, C, A and B, A and C, B and C, or A, B and C) and does not mean one element of A, one element of B and one element of C, unless otherwise specified. Furthermore, the term “based” means that the composition, compound or alloy contains 50% by weight or more of the material on which it is based.

[0006] Nanoimprint lithography (NIL) has been proposed as a lower-cost alternative to extreme ultraviolet lithography (EUV) for fabricating device features at the nanometer scale. Nanoimprint lithography replicas are also referred to as masks and dies, and these terms are used interchangeably in this disclosure. Embodiments of this disclosure provide methods for fabricating a nanoimprint lithography replica (or a nanoimprint lithography mask) and methods for fabricating a semiconductor device. In particular, this disclosure provides methods for reducing the fabrication costs of nanoimprint lithography replicas with improved critical dimension uniformity (CDU) and fewer defects.Furthermore, the production of more cost-effective, high-resolution replicas with fewer defects reduces the costs of semiconductor device manufacturing operations and improves their effectiveness.

[0007] Embodiments of the disclosure are directed to a novel form mask process for nanoembossing lithography. A light projection structuring process is used in the embossing form mask writing process to overcome critical dimension (CD) limitations, improve critical dimension uniformity (CDU) performance, enable defect control, and reduce costs. By using a light projection structuring process, an n:1 reduction in CD resolution, CDU reduction, die-to-die defect control tolerance, and cost reduction are achieved with the form mask used for embossing.

[0008] In embodiments of the disclosure, an optical nX master mask is used in structuring the mold, where n is a factor of image size reduction when transferring the image from the mask to the replica mold features formed in the mold by the photolithographic process of creating a mold structure in the mold substrate. In some embodiments, n of nX is 2, 3, 4, 5, 6, 7, 8, 9, or 10, but is not limited thereto. In some embodiments, n is greater than 10.

[0009] Substrates structured using the embossing process exhibit improved performance in terms of resolution and uniformity of critical dimensions.

[0010] Fig. Figure 1 is a schematic representation of the procedure for producing a mold for manufacturing NIL replicas. As shown in Fig. As shown in Figure 1, actinic radiation 25 is directed onto a photomask 15. The photomask 15 structures the actinic radiation to provide a latent structure of the features to be produced on the mold substrate 40. The structured radiation is modified by optics 35 in the photolithography system to reduce the image scale of the structure to be produced on the substrate 40, thereby producing mold features 50' (e.g., lines, trenches, etc.) that have smaller dimensions than the corresponding features on the photomask 15. In some embodiments, one or more molds 50 are produced on the substrate 40.

[0011] The Fig. Figures 2-6 show a method for producing a mold for manufacturing replicas according to embodiments of the disclosure. In some embodiments, a resist, such as a photoresist, is applied to a surface of a layer to be structured or a substrate 40 to produce a resist layer 150, such as a photoresist layer 150, as shown in Fig. Figure 2 shows that in some embodiments, the photoresist layer 15 is then subjected to a first curing operation to evaporate solvents in the photoresist composition. In some embodiments, the photoresist layer 15 is cured at a temperature and for a time sufficient to cure and dry the photoresist layer 15. In some embodiments, the photoresist layer 15 is heated to a temperature of about 40 °C to about 120 °C for about 10 seconds to about 10 minutes.

[0012] After the first curing operation, the photoresist layer 150 is selectively treated with actinic radiation 25 (see Fig. 3A and Fig. 3B) is exposed during the workflow. In some embodiments, the photoresist layer 150 is selectively exposed to ultraviolet radiation. In some embodiments, the ultraviolet radiation is deep ultraviolet radiation (DUV radiation). In some embodiments, the ultraviolet radiation is extreme ultraviolet radiation (EUV radiation). In some embodiments, the radiation is an electron beam.

[0013] As in Fig. As shown in Figure 3A, in some embodiments the exposure radiation 25 passes through a photomask 15 before irradiating the photoresist layer 150. In some embodiments, the photomask has a structure that is replicated in the photoresist layer 150. In some embodiments, the structure is formed by an opaque structure 135 on the photomask substrate 140. The opaque structure 135 can be made of a material that is impermeable to ultraviolet radiation, such as chromium, while the photomask substrate 140 is made of a material that is permeable to ultraviolet radiation, such as quartz glass.

[0014] In some embodiments, the selective exposure of the photoresist layer 150 to produce exposed areas 152 and unexposed areas 150 is carried out using EUV lithography (EUV: extreme ultraviolet). In an EUV lithography operation, a reflection photomask 165 is used to form the structured light for exposure, as shown in Fig. Figure 3B shows some embodiments. The reflective photomask 165 has a low-thermal-expansion glass substrate 170 on which a reflective multilayer 175 is produced from alternating layers of Si and Mo. A capping layer 180 and an absorber layer 185 are produced on the reflective multilayer 175. A rear conductive layer 190 is produced on the back side of the low-thermal-expansion glass substrate 170. In EUV lithography, extreme ultraviolet radiation 195 is directed onto the reflective photomask 165 at an angle of incidence of about 6°. Part 25 of the extreme ultraviolet radiation is reflected by the Si / Mo multilayer 175 to the photoresist-coated substrate 40, while the part of the extreme ultraviolet radiation that falls on the absorber layer 185 is absorbed by the photomask.In some embodiments, additional optics 35, such as mirrors, are located between the reflection photomask 165 and the photoresist-coated substrate. In some embodiments, the additional optics 35 reduce the size of the image from the dimensions of the features on the photomask to the dimensions of the features to be produced on the substrate 40.

[0015] The exposed area 152 of the photoresist layer undergoes a chemical reaction, which changes its solubility in a subsequently applied developer compared to the unexposed area 150 of the photoresist layer. In some embodiments, the exposed area 152 of the photoresist layer undergoes a crosslinking reaction.

[0016] The photoresist layer 150 is then subjected to post-exposure curing. In some embodiments, the photoresist layer 150 is heated to a temperature of approximately 70 °C to approximately 160 °C for approximately 20 seconds to approximately 10 minutes. In some embodiments, the photoresist layer 150 is heated for approximately 30 seconds to approximately 5 minutes. In some embodiments, the photoresist layer 150 is heated for approximately 1 minute to approximately 2 minutes. Post-exposure curing can be used to assist in the generation, distribution, and reaction of acid / base / free radicals that are generated when the radiation 25 strikes the photoresist layer 150 during exposure. This assistance helps to initiate or enhance chemical reactions that create chemical differences between the exposed area 152 and the unexposed area 150 in the photoresist layer.These chemical differences also cause solubility differences between the exposed area 152 and the unexposed area 150.

[0017] The selectively exposed photoresist layer is then developed by applying a developer to the selectively exposed photoresist layer. As in Fig. As shown in Figure 4, a developer 157 is applied to the photoresist layer 150 from a metering dispenser 162. In some embodiments, where the photoresist is a negative photoresist, the unexposed portion of the photoresist layer 150 is removed by the developer 157, thereby forming a structure of openings 155 in the photoresist layer 150 to expose the substrate 40, as shown in Figure 4. Fig. Figure 5 is shown. In other embodiments, where the photoresist is a positive photoresist, the exposed part of the photoresist layer is removed by the developer 157.

[0018] In some embodiments, the structure of openings 155 in the photoresist layer 150 is extended into the layer to be structured or into the substrate 40 in order to create a structure of openings 155' in the substrate 40, thereby transferring the structure in the photoresist layer 150 into the substrate 40 and producing shape features 50', as shown in Fig. Figure 6 shows that the structure is extended into the substrate by etching using one or more suitable etchants. In some embodiments, the exposed portion of the photoresist layer 150 is at least partially removed during the etching operation. In other embodiments, the exposed portion of the photoresist layer 150 is removed after etching the substrate 40 using a suitable photoresist remover or by a photoresist ashing operation.

[0019] In some embodiments, the substrate 40 is made of silicon, glass, quartz, metal, metal oxide, organic compounds, or combinations thereof. However, the substrate is not limited to these materials. In some embodiments, the substrate 40 is a wafer made of silicon, glass, quartz, metal, metal oxide, and / or organic compounds, such as polymers. In some embodiments, the wafer has a target layer made of silicon, glass, quartz, metal, metal oxide, and / or organic compounds, such as polymers, arranged above the wafer. In some embodiments, the substrate 40 is not a transparent material. If the substrate material is not transparent, it is easier to detect defects in the shape in some embodiments.

[0020] The photoresist layer 150 is a photosensitive layer that is structured by exposure to actinic radiation. Typically, the chemical properties of the photoresist areas struck by the incident radiation change in a manner that depends on the type of photoresist used. The photoresist layers 150 are either positive resists or negative resists. In some embodiments, the photoresist is a positive resist. A positive resist refers to a photoresist material that becomes soluble in a developer upon exposure to radiation, such as UV light, while the unexposed (or less exposed) area of ​​the photoresist is insoluble in the developer. In other embodiments, the photoresist is a negative resist.A negative resist refers to a photoresist material that becomes insoluble upon exposure to radiation in the developer, while the unexposed (or less exposed) area of ​​the photoresist remains soluble. This insoluble area can result from a crosslinking reaction induced by radiation exposure.

[0021] Whether a resist is positive or negative can depend on the type of developer used to develop it. For example, some positive photoresists provide a positive structure (i.e., the exposed areas are removed by the developer) when the developer is water-based, such as a tetramethylammonium hydroxide (TMAH) solution. Conversely, the same photoresist provides a negative structure (i.e., the unexposed areas are removed by the developer) when the developer is an organic solvent, such as n-butyl acetate (nBA). Furthermore, whether a resist is positive or negative can depend on the polymer itself.For some resists developed with the TMAH solution, for example, the unexposed areas of the photoresist are removed by the TMAH, and the exposed areas of the photoresist, which undergo crosslinking upon exposure to actinic radiation, remain on the substrate after development.

[0022] In some embodiments, the photoresist composition comprises a polymer, a photoactive compound (PAC), and a solvent. In some embodiments, the photoresist is a chemically amplified resist (CAR), and the photoactive compound is a photoacid generator (PAG). Upon exposure to actinic radiation and subsequent curing after exposure, the PAG is activated and generates a photoacid. The photoacid reacts with side groups on the polymer, such as crosslinking groups, thereby crosslinking the polymer, or acid-labile groups, thereby cleaving the acid-labile groups and altering the solubility of the exposed areas in a developer.

[0023] Photoresist compositions according to the present disclosure, in some embodiments, comprise a polymer together with one or more photoactive compounds (PACs) in a solvent. In some embodiments, the hydrocarbon structure has a repeating unit that forms a backbone of the polymer. This repeating unit may comprise acrylic esters, methacrylic esters, crotone esters, vinyl esters, maleate diesters, fumarate diesters, itacone diesters, methacrylonitrile, methacrylamides, styrenes, hydroxystyrenes, vinyl ethers, novolacs, combinations thereof, or the like. In some embodiments, the resist comprises metal-based compounds and metal oxide-based compounds.

[0024] The Fig. Figures 7A-7F disclose a method for producing a replica mold and a replica according to embodiments of the disclosure. One or more replica molds 50 are produced on a substrate 40 according to the operations described in this disclosure with reference to the Fig. 1-6 are disclosed to provide one or more forms 50, as in Fig. 7A is shown. The one or more forms 50 are then checked for defects and the dimensions of the form features 50' are measured, as shown in Fig. Figure 7B shows that a control system 115, communicating with a control unit 1000, is used in some embodiments to control the shapes and measure the shape features. In some embodiments, the control system 115 includes a camera. Using the information received from the control system 115, the control unit determines whether the dimensions of the structured shape are within design parameters or design tolerances and whether there are any defects in the shape features. The control unit 1000 compares images of the shape features and the measured feature dimensions with the design data and tolerances stored in the control unit's memory. In some embodiments, the substrate 40 is not transparent, which facilitates the detection of defects.In some embodiments, defects that can be detected by the control system include breaks in lines, incorrect spacing of lines, bridging of adjacent lines, and debris in trenches between lines.

[0025] As in Fig. As shown in Figure 7C, one or more molds 50, whose defect density and feature dimensions are within the tolerance thresholds, are selected as molds for producing replicas. In some embodiments, the mold with the fewest defects and / or the best CDU is selected as the mold for producing the replicas. Then the selected mold 50 is used to produce one or more replicas. As shown in Fig. As shown in Figure 7D, a replica blank 10a, made of a transparent material such as quartz glass, is aligned with the replica mold 50. The replica mold is used to transfer the mold structure into the replica blank through a resist layer on the replica blank, as shown in Figure 7D. Fig. 7E is shown. The resulting replica 10b, which can be used to fabricate semiconductor devices, is shown in Fig. 7F is shown. The replica manufacturing operations are shown in the Fig. 8A-8E explained in more detail.

[0026] A resist layer 205 is arranged above the replica blank 10a, as shown in Fig. Figure 8A is shown. The resist layer can be made from one of the resist materials disclosed in this description. In some embodiments, the resist layer 205 is a photoresist applied to the replica blank 10a as droplets ejected from an inkjet printer. The inkjet deposition operation is described with reference to the Fig. Figures 16A-16C below describe this in more detail. The mold 50 is brought into contact with the resist layer 205. The mold 50 is pressed into the resist layer 205. The pressure causes the resist droplets to spread and fuse on the surface of the replica blank 10a. The recesses in the mold 50 are filled with the resist material by capillary action. In some embodiments, the replica mold 50 is not brought into contact with the surface of the replica or the mask 10b during the structuring operations because direct contact of the replica blank 10a with the mold 50 can damage the replica or the mold.

[0027] As in Fig. As shown in Figure 8B, the ultraviolet radiation 210 from a UV radiation source passes through the UV-transparent replica blank 10a and exposes the resist layer 205 to form a hardened resist layer 205a, thereby transferring the structure 50a in the mold onto the resist layer 205a.

[0028] In some embodiments, the UV radiation source (not shown) includes a mercury vapor lamp; halogen lamps; gas discharge lamps, such as argon and deuterium arc lamps, mercury xenon arc lamps and metal halide arc lamps; UV LEDs; and excimer lasers, such as KrF and ArF lasers.

[0029] As in Fig. As shown in Figure 8C, the form 50 is separated from the cured, structured resist layer 205a. The recesses in structure 205b in the cured photoresist layer 205a correspond to the protrusions in structure 50a in the form 50. Using the structured resist layer 205a as a mask, the structured resist layer 205a and the replica blank 10a are then etched to extend the structure in the resist layer 205b into the replica blank 10a and to produce a replica 10b that has a structure 205b' corresponding to the structure 205b in the resist layer, as shown in Figure 8C. Fig. Figure 8D shows that remaining parts of the resist layer 205a are removed by a suitable resist removal operation, such as a plasma ashing operation or a solvent removal operation. An isometric image of the replicate 10b produced with the disclosed embodiments is shown in Figure 8D. Fig. 8E shown.

[0030] The shapes 50 can be structured using any suitable method. For example, the shape features can be structured using one or more photolithographic processes, such as dual-structuring or multiple-structuring processes, to increase the feature density. In general, dual-structuring or multiple-structuring processes combine photolithographic and self-aligning processes, which can produce structures with, for example, screen spacings smaller than those achievable with a single direct photolithographic process. For example, in one embodiment, a sacrificial layer is produced over a substrate 40, which is then structured using a photolithographic process to produce sacrificial features 51, as shown in Fig. 9A is shown. Spacers 52 are produced along the structured sacrificial layer using a self-adjusting process, as shown in Fig. 9B is shown. Subsequently, the sacrificial layer 51 is removed, and the remaining spacers 52 remain as the form structure features, as shown in Fig. 9C is shown.

[0031] In another embodiment, multiple structuring is used to create shape features whose critical dimensions are smaller than those that can otherwise be achieved with a single direct photolithographic process, as in the Fig. Figure 9D-9H shows a target layer 54, which is to be produced in the form structure features, is deposited over the substrate 40, as shown in Figure 9D-9H. Fig. Figure 9D shows the process. A first hard mask layer 55 and a second hard mask layer 56 are then fabricated over the target layer 54. The first hard mask layer 55 and the second hard mask layer 56 are fabricated from different materials exhibiting different etch selectivities. For example, one hard mask layer can be a nitride layer, and the other hard mask layer can be an oxide layer. A photoresist layer 56 is then fabricated and textured over the second hard mask layer. The textured photoresist layer 56 is used as a mask while the second hard mask layer is etched to create a textured second hard mask layer 56', as shown in Figure 9D. Fig. Figure 9E shows that a second photoresist layer 57 is then produced and structured over the structured second hard mask layer 56' and the first hard mask layer 55, as shown in Figure 9E. Fig. 9F is shown. The second photoresist structure 57 is produced between the structured second hard mask features 56'. In some embodiments, this is done using the same photomask that was also used to structure the first photoresist layer 56, and by laterally shifting the photomask before the second photoresist layer 57 is exposed. Using the structured second hard mask layer 56' and the second structured photoresist layer 57 as masks, the first hard mask layer 55 is structured to produce a structured first hard mask layer 55', as shown in Fig. 9G is shown. In this embodiment, the structured hard mask layer 55' has twice the conduction structure density of the structured second hard mask layer 56'. The structured first hard mask layer 55' is then used as a mask for etching the target layer 54 to produce shape features 54', as shown in Fig. 9H is shown.

[0032] The high structuring resolution and fidelity achieved by the Fig. The multiple structuring methods described in 9A-9C and 9D-9H can be implemented on the form and applied to the replicas or masks 10b according to the methods described in the Fig. The procedures described in sections 8A-8E will be duplicated.

[0033] In other embodiments, the size of the shape features is further reduced by using mandrel structuring and cutting operations, as in the Fig. 10A-10D. One or more shapes 50, which have a plurality of shape features or mandrels 60, are defined according to one of the features shown in the Fig. manufactured using the methods described in 1-6 and 9A-9H, as in Fig. Figure 10A shows that in some embodiments the form structure consists of a plurality of parallel mandrels 60, as shown in Fig. Figure 10B shows that one or more of the 60 thorns are cut using photolithographic operations, as shown in Figure 60B. Fig. 10C is shown to produce cut shape features 62 with smaller CDs, as in Fig. 10D is shown. The shapes 50, which are in the Fig. The methods described in sections 10A-10D are subsequently used to produce replicas 10b according to the methods described in the Fig. to produce the methods described in sections 8A-8E.

[0034] In other embodiments, methods of structuring overlay correction are used to transfer and correct overlay distortion caused by optical exposure to the replica and to reduce the residual overlap with adjacent layers. As in Fig. As shown in Figure 11A, a mold 50 is produced on a substrate by lithographic operations disclosed in this description. In some embodiments, there is an overlay deformation, as represented by the uncorrected overlay and the target overlay 125. The arrows indicate the amount and direction of the overlay deformation. Using the control system 115 and the control unit 1000, an overlay compensation amount 135 is determined to correct the overlay deformation, as shown in Figure 11A. Fig. Figure 11B shows the overlap compensation. Fig. 11C has been applied, and another shape is produced with a smaller amount of the covering deformation 130, as shown by the shorter arrows.

[0035] Implementations of the disclosure improve CD uniformity. As in Fig. As shown in Figure 12A, after the production of a mold 40, the critical dimensions (CD) of the mold structure features 64 are measured using the control system 115 and the control unit 1000 and compared with the target CD of the mold structures 62. If the critical dimension is not within the design tolerances, one or more parameters of the photolithographic operations are adjusted, and another mold is produced using the adjusted photolithographic parameters. Adjustable parameters of the photolithographic operations include, among others, the exposure dose, the exposure time, the parameters for post-exposure curing, and the development temperature. For example, in some embodiments, the exposure dose of actinic radiation 25 is adjusted, and another replica mold 50 is produced using the adjusted exposure dose of actinic radiation 25'.The critical dimension of the shape features 66 of the further shape is measured using the control system 115 and the control unit 1000, as in . Fig. As shown in Figure 12B, if the critical dimension is within the design tolerance, the replica mold is used to produce the replicas. In the embodiment of the Fig. 12A and Fig. For example, 12B would produce the next shape with a higher exposure dose if the inspection reveals that the critical dimension is outside the target because the exposure dose is too low.

[0036] Fig. Figure 13 shows a plan view of a nanoimprint lithography replica 10b according to embodiments of the present disclosure. In some embodiments, the replica 10b comprises a structure area (or device area) 20 with a structure corresponding to features to be produced on a device. In some embodiments, the structure corresponds to features of a semiconductor device. In some embodiments, the structures correspond to an integrated circuit. The structured area is enclosed by a frame area 30. In some embodiments, the frame area 30 is rectangular and has a width W1 in a range of about 13 mm to about 152 mm and a height H1 in a range of about 15 mm to about 152 mm. In some embodiments, the frame width W1 is in a range of about 20 mm to about 76 mm, and the frame height H1 is in a range of about 25 mm to about 96 mm.In some embodiments, the frame width W1 is approximately 26 mm and the height H1 is approximately 33 mm.

[0037] In some embodiments, the frame area has 30 parts where an alignment mark structure 45 is produced. In some embodiments, the alignment mark structure 45 is a groove. The alignment mark structure is used to align the replica on the substrate to be structured.

[0038] The Fig. 14A and Fig. Figure 14B shows a plan view or a sectional view of a semiconductor device manufacturing operation using a nanoimprint lithography replica according to embodiments of the present disclosure. Fig. Figure 14A shows the mask 10b, which is positioned over a structure field of the substrate 105. Fig. 14B shows a section view along line CC of Fig. 14A.

[0039] Substrate 105 is a semiconductor substrate, such as a wafer, or another suitable substrate suitable for structuring is provided for fabricating an integrated circuit. In some embodiments, the semiconductor substrate comprises silicon. Alternatively or additionally, the semiconductor substrate comprises germanium, silicon germanium, or other suitable Group IV or Group III-V semiconductor materials. According to some embodiments, substrate 105 comprises a single-crystal semiconductor layer, at least on its surface portion. Substrate 105 may comprise a single-crystal semiconductor material such as, but not limited to, Si, Ge, SiGe, GaAs, InSb, GaP, GaSb, InAlAs, InGaAs, GaSbP, GaAsSb, and InP. In some embodiments, substrate 105 is a silicon layer of a silicon-on-insulator (SOI) substrate. In certain embodiments, substrate 105 is made of crystalline Si.

[0040] The substrate 105 can have one or more buffer layers (not shown) in its surface region. The buffer layers can serve to gradually change the lattice constant from that of the substrate to that of the subsequently fabricated source / drain regions. The buffer layers can be made from epitaxially grown single-crystal semiconductor materials such as, but not limited to, Si, Ge, GeSn, SiGe, GaAs, InSb, GaP, GaSb, InAlAs, InGaAs, GaSbP, GaAsSb, GaN, GaP, and InP. In one embodiment, the silicon-germanium buffer layer (SiGe buffer layer) is epitaxially grown onto the silicon substrate 105. The germanium concentration of the SiGe buffer layers can increase from 30 atomic percent for the bottom buffer layer to 70 atomic percent for the top buffer layer.

[0041] In some embodiments, the substrate 105 has one or more layers of at least one metal, a metal alloy and a metal nitride / sulfide / oxide / silicide with the formula MX a where M is a metal, and X is N, S, Se, O, Si, and a is in a range of about 0.4 to about 2.5. In some embodiments, the substrate 105 comprises titanium, aluminum, cobalt, ruthenium, titanium nitride, tungsten nitride, tantalum nitride, and combinations thereof.

[0042] In some embodiments, the substrate 105 comprises a dielectric material with at least one silicon or metal oxide or nitride of the formula MX b where M is a metal or Si, X is N or O, and b is in a range of 0.4 to about 2.5. In some embodiments, the substrate 105 comprises silicon dioxide, silicon nitride, aluminum oxide, hafnium oxide, lanthanum oxide, and combinations thereof.

[0043] During the Fig. 14A and Fig. In the embodiment shown in Figure 14B, the replica 10b is shown positioned above a structure field 2 of the semiconductor substrate after the replica 10b has been used to fabricate the hardened, structured resist layer 70a in a structure field 1. As shown in Fig. As shown in Figure 14B, the resist layer 70a is hardened in structure field 1 because it has already been exposed to ultraviolet radiation, while the resist layer 70 in structure field 2 is not hardened because it has not been exposed to ultraviolet radiation.

[0044] The Fig. 15A and Fig. Figure 15B shows a plan view or a sectional view of a semiconductor device manufacturing operation using a nanoimprint lithography replica according to embodiments of the present disclosure. Fig. 15B is a cross-section along line BB of Fig. 15A. As in Fig. As shown in Figure 15B, ultraviolet radiation 75 from a UV radiation source passes through the UV-transparent parts of replicate 10b and exposes the resist layer to form the hardened resist layer 70a, thereby transferring the structure in the structure area 20 of replicate 10b to the resist layer 70a.

[0045] In some embodiments, the UV radiation source (not shown) includes a mercury vapor lamp; halogen lamps; gas discharge lamps, such as argon and deuterium arc lamps, mercury xenon arc lamps and metal halide arc lamps; UV LEDs; and excimer lasers, such as KrF and ArF lasers.

[0046] The nano-embossing lithography processes according to embodiments of the disclosure are described with reference to the Fig. 16A-17H are discussed in more detail. Fig. Figures 16A-16G schematically show sequential operations for the fabrication of a semiconductor device according to embodiments of the disclosure.

[0047] A resist material is deposited over a substrate 105 to produce a resist layer 70. In some embodiments, the resist layer is deposited using an inkjet printer 95, as in Fig. Figure 16A shows that the inkjet 95 distributes droplets 99 of the resist material from an inkjet head. The inkjet head can have a plurality of nozzles 97 that simultaneously distribute a plurality of resist material droplets. In some embodiments, the inkjet head can have hundreds of nozzles 97. In some embodiments, the inkjet printer 95 moves laterally with respect to the substrate 105 while depositing resist material droplets 99 over the surface of the substrate 105. In some embodiments, the inkjet 95 and the substrate are of a suitable size such that an entire structural field is deposited simultaneously.In some embodiments, the resist droplet volumes are in the range of about 0.1 pL to about 100 µL, in other embodiments the droplet volume is in the range of about 1 pL to about 10 µL, and in still other embodiments the droplet volume is in the range of about 1 nL to about 1 µL. In other embodiments, the resist layer 70 can be produced by other suitable methods, such as a spin coating operation.

[0048] In some embodiments, the resist material comprises polymerizable monomers or oligomers that polymerize upon exposure to ultraviolet radiation. In some embodiments, the resist material comprises a photoactive component, including a photosensitizer, a photoinitiator, and / or a photochemical acidifier. In some embodiments, the polymerizable monomer comprises acrylates, methacrylates, epoxides, vinyl ethers, thiols, and alkenes.

[0049] In some embodiments, the resist material composition includes a solvent. The solvent can be any suitable solvent. In some embodiments, the solvent is one or more selected from the group consisting of: propylene glycol methyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), 1-ethoxy-2-propanol (PGEE), γ-butyrolactone (GBL), cyclohexanone (CHN), ethyl lactate (EL), methanol, ethanol, propanol, n-butanol, acetone, dimethylformamide (DMF), isopropanol (IPA), tetrahydrofuran (THF), methyl isobutylcarbinol (MIBC), n-butyl acetate (nBA), and 2-heptanone (MAK). In some embodiments, the resist-coated substrate is heated after deposition of the resist layer to drive off the solvent.

[0050] As in Fig. As shown in Figure 16B, a replica 10b according to embodiments of the present disclosure is positioned over the resist-coated substrate 105. ... Fig. As shown in Figure 16C, the replica 10b is then pressed into the resist layer 70. The pressure causes the resist droplets to spread and fuse on the surface of the substrate 105. The cavities in the replica 10b are filled with the resist material by capillary action. In some embodiments, some of the resist material spreads upwards along the side wall of the replica outside the frame area by capillary action.

[0051] As in Fig. As shown in Figure 16D, the resist layer 70 is then exposed to ultraviolet radiation 75 through the replicate 10b, and the exposed resist layer is cured or hardened. During exposure to ultraviolet radiation, the resist material polymerizes and / or cross-links in the exposed parts of the resist layer 70a.

[0052] The replicate 10b is then removed from the resist-coated substrate, and the structured resist layer 70a with structure 77 remains on the substrate 105, as shown in Fig. Figure 16E shows that in some embodiments, the surface of the structure in the structure region 20 of the replica is coated with an anti-stick agent to prevent the resist layer from adhering to the replica. In some embodiments, the substrate 105 is not brought into contact with the surface of the replica or the mask 10b during the structuring operations. Therefore, parts of the resist layer between the replica 10b and the substrate 105 are also cured during the UV radiation exposure operation, resulting in a residual layer thickness (RLT) of the cured resist layer 70a over the substrate 105. The RLT thickness can be controlled by adjusting various resist and structure fabrication parameters, such as resist material, resist viscosity, type of solvent in the resist material, solvent concentration in the resist material, and stamping pressure.In some embodiments, the RLT has a thickness of approximately 0.1 nm to approximately 10 nm. In other embodiments, the RLT has a thickness of approximately 1 nm. While it may be desirable to minimize the thickness of the RLT, it may not be desirable to eliminate the RLT completely, since direct contact of the replicate 10b with the substrate 105 could damage the replicate or the substrate.

[0053] In some embodiments, the RLT is subsequently removed by a suitable dry etching process, such as plasma etching or reactive ion etching, as in Fig. Figure 16F shows that by etching, the resist structure 77 is extended through the RLT and into the substrate 105, and a structure 77' is formed in the substrate. In some embodiments, the etching chemicals and etching parameters are regulated during the etching operation depending on the material being etched (i.e., cured resist material or substrate). In some embodiments, the resist structure is then subsequently removed from the structured substrate 105 using a suitable resist removal or plasma ashing operation, as shown in Figure 16F. Fig. 16G is shown.

[0054] The Fig. Figures 17A-17G schematically show sequential operations for the fabrication of a semiconductor device according to embodiments of the disclosure. The process of Fig. 17A-17G is similar to the one referred to in the Fig. 16A-16G, wherein a target layer 145 to be structured is added, which is arranged above the substrate 105, as in Fig. Figure 17A shows that in some embodiments, the target layer 145 comprises a conductive layer, such as a metal layer or a polysilicon layer, a dielectric layer, such as silicon oxide, silicon nitride, SiON, SiOC, SiOCN, SiCN, hafnium oxide, or aluminum oxide, or a semiconductor layer, such as an epitaxially grafted semiconductor layer. In some embodiments, the target layer 145 is fabricated over an underlying structure, such as insulating structures, transistors, or wiring.

[0055] A resist material is deposited over the target layer 145 to produce a resist layer 70. In some embodiments, the resist layer is deposited using an inkjet printer 95, as shown in Fig. 17B is shown and described with reference to Fig. 16A is disclosed. In other embodiments, the resist layer 70 can be produced using other suitable methods, such as a spin-on operation.

[0056] As in Fig. As shown in Figure 17C, a replica 10b according to embodiments of the present disclosure is positioned above the resist-coated target layer 145. As shown in Fig. As shown in Figure 17D, the replica is then pressed into the resist layer 70. The pressure causes the resist droplets to spread and fuse on the surface of the target layer 145. The recesses in the replica 10b are filled with the resist material by capillary action. In some embodiments, some of the resist material spreads upwards by capillary action along the side wall of the replica outside the frame area.

[0057] As in Fig. As shown in Figure 17E, the resist layer 70 is then exposed to ultraviolet radiation 75 through the replicate 10b, and the exposed resist layer is cured or hardened. During exposure to ultraviolet radiation, the resist material polymerizes and / or cross-links in the exposed parts of the resist layer 70a.

[0058] The replicate 10b is then removed from the resist-coated target layer 145, and the structured resist layer 70a with structure 77 remains on the substrate 105, as shown in Fig. Figure 17F shows this. In some embodiments, the surface of the structure in the structure region 20 of the replica is coated with an anti-stick agent to prevent the resist layer from adhering to the mask. In some embodiments, the target layer 145 is not brought into contact with the surface of the replica or the mask 10b during the structuring operations. As a result, the cured resist layer 70a above the target layer 145 has a residual layer thickness (RLT). The thickness of the RLT can be controlled by adjusting various resist and structure fabrication parameters, such as resist material, resist viscosity, type of solvent in the resist material, solvent concentration in the resist material, and die pressure.While it may be desirable to minimize the thickness of the RLT, it may not be desirable to eliminate the RLT completely, as direct contact of the replicate 10b with the target layer 145 may damage the replicate or the substrate.

[0059] In some embodiments, the RLT is subsequently removed by a suitable dry etching process, such as plasma etching or reactive ion etching, as in Fig. Figure 17G shows that the resist structure 77 extends through the RLT and into the target layer 145, and a structure 77' is produced in the target layer. In some embodiments, the etching chemicals and etching parameters are regulated during the etching operation depending on the material being etched (i.e., cured resist material or target layer).

[0060] In some embodiments, the resist structure is then subsequently removed from the structured target layer using a suitable resist removal or plasma ashing operation, as shown in Fig. It shows 17H.

[0061] After removing the replica or mask 10b from the resist material, in some embodiments uncured resist material is removed from the surface of the target layer and / or the replica using a suitable air purging procedure or with a solvent.

[0062] Further operations can be performed on the structure of the Fig. 16G and Fig. 17H are carried out, such as the fabrication of transistors, such as fin field-effect transistors (FinFETs), gate-all-around field-effect transistors (GAA FETs), bipolar transistors, and planar transistors; memory devices; capacitors; insulating layers; and metal wiring layers, such as interconnects and vias. The structures of Fig. 16G and Fig. 17H can be part of a larger integrated circuit that includes other devices and components.

[0063] Fig. Figure 18A is a schematic view of a computer system 1000 that functions as a control unit for the mold, replica, and semiconductor device control and manufacturing operations in the embodiments of the disclosure. The processes, methods, and / or operations of the foregoing embodiments can be implemented wholly or partially using computer hardware and computer programs executed thereon. Fig. 18A is a computer system 1000 provided with a computer 1001 comprising a video disk read-only storage drive 1005 (e.g. CD-ROM or DVD-ROM drive) and a magnetic disk drive 1006, a keyboard 1002, a mouse 1003 and a monitor 1004.

[0064] Fig. Figure 18B is a schematic diagram showing an internal configuration of the Computer System 1000. Fig. In 18B, the computer 1001 is equipped with the following in addition to the video disk drive 1005 and the magnetic disk drive 1006: one or more processors, such as a microprocessor unit (MPU) 1011; a read-only memory (ROM) 1012, in which a program, such as a boot program, is stored; a random access memory (RAM) 1013, which is connected to the MPU 1011 and in which an instruction of an application program is temporarily stored and a temporary memory area is provided; a hard disk 1014, on which an application program, a system program and data are stored; and a bus 1015, which connects the MPU 1011, the ROM 1012 and the like. It should be noted that the computer 1001 may have a network card (not shown) to provide a LAN connection.

[0065] The program that causes the computer system 1000 to perform the functions for the lithographic and control systems in the foregoing embodiments can be stored on an image disk 1021 or a magnetic disk 1022, which is inserted into the image disk drive 1005 or the magnetic disk drive 1006, and can be transferred to the hard disk 1014. Alternatively, the program can be transferred to the computer 1001 via a network (not shown) and stored on the hard disk 1014. At the time of execution, the program is loaded into RAM 1013. The program can be loaded from the image disk 1021 or the magnetic disk 1022, or directly from a network.The program does not necessarily need to include, for example, an operating system (OS) or a third-party program to cause the computer 1001 to perform the functions of lithographic structuring and control of the shape, replica, semiconductor device, and lithographic system in the foregoing embodiments. The program may possibly only include an instruction portion to call a corresponding function (module) in a controlled operating mode and obtain desired results.

[0066] Fig. Figure 19 shows a flowchart of a process 1900 for producing a nanoimprint lithography replica according to embodiments of the present disclosure. The process 1900 comprises operation S1905 for depositing a first resist layer 150 over a substrate 40, and selective exposure of the first resist layer 150 with a first actinic radiation 25 in operation S1910. The selectively exposed first resist layer 150 is developed in operation S1915 to produce a structure 155 in the first resist layer. The structure 155 in the first resist layer is extended into the substrate 40 in operation S1920 to produce a shape 50 having a structure 50a in the substrate. The first resist layer is then removed from the substrate in operation S1925. In operation S1930, a second resist layer 205 is deposited over a replica blank 10a.The second resist layer 205 is brought into contact with form 50 in operation S1935. In operation S1940, the second resist layer 205 is then exposed to a second actinic radiation 75. After exposure of the second resist layer 205 to the second actinic radiation, form 50 and the exposed second resist layer 205a are separated in operation S1945. A structure 205b is produced in the exposed second resist layer 205a, corresponding to structure 50a in form 50. In operation S1950, structure 205b in the second resist layer 205a is extended into the replica blank 10a, and the second resist layer is removed from the replica blank 10a in operation S1955 to produce a replica 10b. In some embodiments, the selective exposure of the first resist layer 150 with a first actinic radiation 25 comprises directing the actinic radiation 25 onto a photomask 15.In some embodiments, during operation S1930, droplets 99 of a second resist layer material 205 are ejected from an inkjet printer 95 over the replica blank in operation S1960. In some embodiments, during operation 1940, the second actinic radiation 75 passes through the replica blank 10a to expose the second resist layer 205 in operation S1965.

[0067] Fig. Figure 20 shows a flowchart of a process 2000 for producing a nanoimprint lithography replica according to embodiments of the present disclosure. The process 2000 comprises an operation S2005 for depositing a first resist layer 150 over a substrate 40, and exposure of the first resist layer 150 with a first structured actinic radiation 25 in an operation S2010. The first structured actinic radiation 25 is structured with a photomask 15. The exposed first resist layer 150, 152 is developed to produce a structure 155 in the first resist layer in an operation S2015. In an operation S2020, the structure 155 in the first resist layer is then extended into the substrate 40 to produce a structured shape 50 in the substrate 40.The structured shape is checked in operation S2025, and in operation S2030 it is determined whether the dimensions of the structured shape are within the design parameters. In operation S2035, the structured shape 50 is brought into contact with a second resist layer 205, which is arranged over a replica blank 10a, if the dimensions of the structured shape are within the design parameters. The second resist layer 205 is exposed to a second actinic radiation 75 in operation S2040. In operation S2045, the shape 50 and the exposed second resist layer 205a are then separated. A structure 205b is fabricated in the exposed second resist layer. The structure 205b in the second resist layer is extended into the replica blank 10a in operation S2050, and the second resist layer is removed from the replica blank to produce a replica 10b in operation S2060.In some embodiments, during operation S2040 the second actinic radiation 75 passes through the replica blank 10a to expose the second resist layer in operation S2060.

[0068] Fig. Figure 21 shows a flowchart of a method 2100 for fabricating a semiconductor device according to embodiments of the present disclosure. The method 2100 comprises an operation S2105 for using photolithographic operations to fabricate a mold 50 on a first substrate 40. In an operation S2110, a first resist layer 205 is deposited over a replica blank 10a. Then, in an operation S2115, the first resist layer 205 is brought into contact with the mold 50. The first resist layer 205 is exposed to a first actinic radiation 75 passing through the replica blank to fabricate a structure 205b in the first resist layer in an operation S2120. By exposing the first resist layer 205 to the first actinic radiation 75, exposed portions 205a of the first resist layer are cured.In operation S2125, structure 205b in the first resist layer is transferred to the replica blank 10a to produce a replica 10b. In operation S2130, a second resist layer 70 is deposited over a second substrate 105. In operation S2135, the replica 10b is brought into contact with the second resist layer 70. Then, in operation S2140, the second resist layer 70 is exposed to a second actinic radiation 75 that passes through the replica to produce a structure 77 in the second resist layer. Exposure of the second resist layer 70 with the actinic radiation 75 cures the exposed portions of the second resist layer. In operation S2145, structure 77 in the second resist layer is transferred to the second substrate 105.In some embodiments, during operation S2105, a third actinic radiation 25 is directed in operation S2150 onto a photomask 115 having one or more structural features, and one or more shape features 50' are produced in the shape 50 corresponding to the one or more structural features in the photomask in operation S2155, wherein the dimensions of the one or more shape features are smaller than the one or more corresponding structural features in the photomask.

[0069] Fig. Figure 22 shows a flowchart of a process 2200 for producing a nano-embossed lithography replica according to embodiments of the present disclosure. The process 2200 comprises an operation S2205 for producing a replica mold 50 with structured shape features 50' on a substrate 40 using first photolithographic operations. In an operation S2210, it is determined whether the dimensions of the structured shape features are within design tolerances.If the dimensions of the structured shape features are not within the design tolerances: in an operation S2215, one or more parameters of the photolithographic operations are regulated; in an operation S2220, another replica mold with structured shape features is produced on the substrate using second photolithographic operations with the regulated parameters; and in an operation S2225, it is determined whether the dimensions of the structured shape features on the substrate of the further replica mold are within the design tolerances.If the dimensions of the structured shape features are within the design tolerances: in operation 2230 the structured shape 50 is brought into contact with a resist layer 205 which is arranged over a replica blank 10a, in operation S2235 the resist layer 205 is exposed with a first actinic radiation 210, in operation S2240 the structured shape 50 and the exposed resist layer 205a are separated, a structure 205b is produced in the exposed resist layer, the structure in the resist layer 205b is extended into the replica blank 10a in operation S2245, and in operation S2250 the resist layer is removed from the replica blank 10a to produce a replica 10b. In some embodiments, during operation S2235, the actinic radiation 210 passes through the replica blank 10a in operation S2255 to expose the resist layer 205.In one embodiment, during operation S2205, a second actinic radiation 25 is directed in operation S2260 onto a photomask 15 which has photomask structural features corresponding to the shape features 50, and the dimensions of the shape features are smaller than the corresponding photomask structural features.

[0070] Fig. Figure 23 shows a flowchart of a method 2300 for fabricating a semiconductor device according to embodiments of the present disclosure. The method 2300 comprises an operation S2305 for photolithographically structuring a first resist layer 155 arranged over a first substrate 40. The photolithographic structuring is performed using a photomask 15. A structure 155 fabricated in the first resist layer is extended into the substrate 40 in an operation S2310 to fabricate a structured shape 50 in the substrate. In an operation S2315, the structured shape 50 is inspected, and in an operation S2320, it is determined whether the dimensions of the structured shape are within design tolerances.In operation S2325, the structured shape 50 is brought into contact with a second resist layer 205, which is positioned over a replica blank 10a, provided the dimensions of the structured shape are within the design tolerances. In operation S2330, the second resist layer 205 is exposed to first actinic radiation 210, whereby portions of the second resist layer are hardened by the exposure to the first actinic radiation. In operation S2325, the replica blank 10a is etched using the hardened second resist layer 205b as a mask. In operation S2340, the second resist layer is removed from the replica blank 10a to produce a replica 10b. In operation S2345, a third resist layer 70 is then deposited over a second substrate 105. Replica 10b is brought into contact with the third resist layer 70 in operation S2350.In operation S2355, the third resist layer 70 is exposed to a second actinic radiation 75 that passes through the replicate 10a to produce a structure 77 in the third resist layer 70. Exposure of the third resist layer 70 to the actinic radiation 75 cures exposed portions of the third resist layer. In operation S2360, the structure 77 in the third resist layer is transferred to the second substrate 105. In one embodiment, operation S2345 comprises operation S2365 for ejecting droplets 99 of a third resist layer material from an inkjet printer 95 onto the substrate 105.

[0071] Fig.Figure 24 shows a flowchart of a method 2400 for fabricating a semiconductor device according to embodiments of the present disclosure. The method 2400 comprises an operation S2405 for using photolithographic operations to fabricate a plurality of shapes 50 on a first substrate 40. The plurality of shapes 50 are inspected for defects in an operation S2410, and in an operation S2415, it is determined which of the plurality of shapes have defect densities below a threshold. In an operation S2420, one or more replicates 10b are fabricated using one or more of the plurality of shapes 50 whose defect densities are below the threshold. In an operation S2425, a resist layer 70 is fabricated over a second substrate 105, and in an operation S2430, the one or more replicates 10b are used to fabricate one or more structures 77 in the resist layer 70.In one embodiment, during operation S2405, an actinic radiation 25 is directed in operation S2435 onto a photomask 15 having one or more photomask structural features, and one or more shape features 50' are produced in each of the plurality of shapes 50 corresponding to the one or more structural features, wherein the dimensions of the one or more shape features are smaller than the one or more corresponding structural features.

[0072] Embodiments of the present disclosure include methods for producing replica molds, replicas, and semiconductor devices with improved critical dimension uniformity (CDU). The replica mold fabrication process utilizes an optical projection structuring process, which, compared to electron beam replica mold fabrication processes, enables better defect control, overcomes critical dimension (CD) limitations, and reduces the cost and time required to produce a replica mold. In embodiments of the disclosure, finer replica mold features and a higher replica mold structure density are achieved by optically miniaturizing the photomask structure used in imaging the replica mold structure.In some embodiments, the dimensions of the photomask structure are reduced by a factor of 10 or more. In some embodiments, improved CDU and a smaller overlap difference between the replica shape and the optical exposure system are achieved by controlling the replica mold, determining whether the replica mold features and the overlap deformation are within design tolerances, regulating the mold manufacturing parameters, and manufacturing further molds using the regulated manufacturing parameters.

[0073] Further advantages of embodiments of the disclosure include the ability to quickly produce multiple replica molds, control the production of these multiple replica molds, and select the replica molds with the lowest defect density for replica production. Furthermore, the photolithographic process parameters can be regulated to fine-tune the CD. Additionally, higher throughput can be achieved because embodiments of the disclosure reduce the mold mask production cycle time to less than approximately two days at lower cost, with improved CD uniformity, and allow for the provision of a flexible target CD area.

[0074] Some embodiments of the disclosure provide replica forms and replicas with a CD resolution of less than about 26 nm and a CDU in a range of about 0.5 nm to about 6 nm.

[0075] It is understood that not all advantages have necessarily been discussed in this description, no particular advantage is required for all embodiments or examples, and other embodiments or examples may offer other advantages.

[0076] A method for producing a nanoimprint lithography replica according to an embodiment of the disclosure comprises depositing a first resist layer over a substrate and selectively irradiating the first resist layer with a first actinic radiation. The selectively irradiated first resist layer is developed to produce a structure within the first resist layer. The structure in the first resist layer is extended into the substrate to produce a shape within the substrate. The first resist layer is removed from the substrate. A second resist layer is deposited over a replica blank. The second resist layer is brought into contact with the shape. The second resist layer is irradiated with a second actinic radiation. The shape and the irradiated second resist layer are separated. A structure is produced within the irradiated second resist layer.The structure in the second resist layer is extended into the replica blank, and the second resist layer is removed from the replica blank to produce a replica. In one embodiment, selectively exposing the first resist layer with first actinic radiation involves directing the first actinic radiation onto a photomask. In one embodiment, the first actinic radiation is deep ultraviolet or extreme ultraviolet radiation. In one embodiment, exposing the second resist layer with second actinic radiation cures exposed portions of the second resist layer. In one embodiment, the second actinic radiation is ultraviolet radiation. In one embodiment, depositing the second resist layer onto a replica blank involves ejecting droplets of a second resist layer material from an inkjet printer onto the replica blank.In one embodiment, during the exposure of the second resist layer with the second actinic radiation, the second actinic radiation passes through the replica blank to expose the second resist layer. In one embodiment, the substrate is made of one or more materials selected from the group consisting of: silicon, a silicon oxide, a silicon nitride, carbon, SiOC, SiON, SiOCN, a metal, a metal oxide, and an ultraviolet-absorbing organic compound. In one embodiment, the substrate comprises a silicon wafer. In one embodiment, the replica blank is made of quartz glass.

[0077] Another embodiment of the disclosure is a method for producing a nano-embossed lithography replica, comprising depositing a first resist layer over a substrate and exposing the first resist layer to a first structured actinic radiation. The first structured actinic radiation is patterned using a photomask. The exposed first resist layer is developed to create a structure within the first resist layer. The structure in the first resist layer is extended into the substrate to create a patterned shape within the substrate. The patterned shape is inspected, and it is determined whether the dimensions of the patterned shape are within design parameters. The patterned shape is brought into contact with a second resist layer placed over a replica blank if the dimensions of the patterned shape are within the design parameters.The second resist layer is exposed to a second actinic radiation. The mold and the exposed second resist layer are separated. A structure is fabricated in the exposed second resist layer. The structure in the second resist layer is extended into the replica blank, and the second resist layer is removed from the replica blank to produce a replica. In one embodiment, the substrate has a target layer arranged over a wafer. In one embodiment, the wafer is a silicon wafer, and the target layer comprises one or more materials selected from the group consisting of: a silicon oxide, a silicon nitride, carbon, SiOC, SiON, SiOCN, a metal, a metal oxide, and ultraviolet-absorbing organic compounds. In one embodiment, the replica blank is made of fused silica.In one embodiment, during the exposure of the second resist layer with the second actinic radiation, the second actinic radiation passes through the replica blank to expose the second resist layer.

[0078] Another embodiment of the disclosure is a method for manufacturing a semiconductor device, and it comprises using photolithographic operations to create a mold on a first substrate. A first resist layer is deposited over a replica blank. The first resist layer is brought into contact with the mold. The first resist layer is exposed to first actinic radiation, which passes through the replica blank, to create a structure in the first resist layer. Exposure of the first resist layer with the first actinic radiation cures exposed portions of the first resist layer. The structure in the first resist layer is transferred to the replica blank to produce a replica. A second resist layer is deposited over a second substrate. The replica is brought into contact with the second resist layer.The second resist layer is exposed to a second actinic radiation beam that passes through the replicate to create a structure in the second resist layer. Exposure of the second resist layer with actinic radiation hardens the exposed portions of the second resist layer. The structure in the second resist layer is transferred to the second substrate. In one embodiment, during the photolithographic operation: a third actinic radiation beam is directed onto a photomask having one or more structural features, and one or more shape features are produced in the mold corresponding to the one or more structural features, wherein the dimensions of the one or more shape features are smaller than the one or more corresponding structural features. In one embodiment, the dimensions of the one or more shape features are 2 to 10 times smaller than the one or more corresponding structural features.In one embodiment, the third actinic radiation is deep ultraviolet or extreme ultraviolet radiation. In one embodiment, the first and second substrates comprise silicon wafers.

[0079] Another embodiment of the disclosure is a method for producing a nano-embossed lithography replica, comprising producing a replica mold with structured shape features on a substrate using first photolithographic operations. It is determined whether the dimensions of the structured shape features are within design tolerances. If the dimensions of the structured shape features are not within the design tolerances: adjusting one or more parameters of the photolithographic operations; producing another replica mold with structured shape features on the substrate using second photolithographic operations with the adjusted parameters; and determining whether the dimensions of the structured shape on the substrate of the further replica mold are within the design tolerances.If the dimensions of the structured shape features are within the design tolerances: contacting the structured shape with a resist layer arranged over a replica blank; irradiating the resist layer with initial actinic radiation; separating the structured shape and the irradiated resist layer, thereby creating a structure in the irradiated resist layer; extending the structure in the resist layer into the replica blank; and removing the resist layer from the replica blank to produce a replica. In one embodiment, the substrate has a target layer arranged over a wafer.In one embodiment, the wafer is a silicon wafer, and the target layer comprises one or more materials selected from the group consisting of: silicon oxide, silicon nitride, carbon, SiOC, SiON, SiOCN, a metal, a metal oxide, and ultraviolet-absorbing organic compounds. In one embodiment, the replica blank is made of fused silica. In one embodiment, during the exposure of the resist layer with the first actinic radiation, the actinic radiation passes through the replica blank to expose the resist layer. In one embodiment, during the first photolithographic operation, a second actinic radiation beam is directed onto a photomask having photomask structural features that correspond to the shape features, and the dimensions of the shape features are smaller than the corresponding photomask structural features.In one embodiment, the dimensions of the shape features are 2 to 10 times smaller than the corresponding photomask structure features. In one embodiment, the second actinic radiation is deep ultraviolet or extreme ultraviolet radiation. In one embodiment, the first actinic radiation is ultraviolet radiation. In one embodiment, parts of the resist layer are cured by exposing the resist layer to first actinic radiation.

[0080] Another embodiment of the disclosure is a method for fabricating a semiconductor device, comprising photolithographic structuring of a first resist layer arranged over a first substrate. The photolithographic structuring is performed using a photomask. A structure fabricated in the first resist layer is extended into the substrate to create a structured shape within the substrate. The structured shape is inspected, and it is determined whether the dimensions of the structured shape are within design tolerances. The structured shape is brought into contact with a second resist layer arranged over a replica blank if the dimensions of the structured shape are within the design tolerances.The second resist layer is exposed to a first actinic radiation, curing portions of the second resist layer. The replica blank is etched using the cured second resist layer as a mask. The second resist layer is removed from the replica blank to create a replica. A third resist layer is deposited over a second substrate. The replica is brought into contact with the third resist layer. The third resist layer is exposed to a second actinic radiation beam that passes through the replica to create a structure within the third resist layer. The exposed portions of the third resist layer are cured by the actinic radiation. The structure within the third resist layer is transferred to the second substrate.In one embodiment, the deposition of the third resist layer over the second substrate comprises ejecting droplets of a third resist layer material from an inkjet printer onto the substrate. In one embodiment, the first substrate is made of one or more materials selected from the group consisting of: silicon, a silicon oxide, a silicon nitride, carbon, SiOC, SiON, SiOCN, a metal, a metal oxide, and an ultraviolet-absorbing organic compound. In one embodiment, the second substrate comprises a silicon wafer. In one embodiment, the replica blank is made of quartz glass.

[0081] Another embodiment of the disclosure is a method for fabricating a semiconductor device, and it comprises using photolithographic operations to fabricate a plurality of shapes on a first substrate. The plurality of shapes are inspected for defects, and it is determined which of the plurality of shapes exhibit defect densities below a threshold. One or more replicates are fabricated using one or more of the plurality of shapes exhibiting defect densities below the threshold. A resist layer is fabricated over a second substrate, and the one or more of the plurality of shapes exhibiting defect densities below the threshold are used to fabricate one or more structures in the resist layer.In one embodiment, during the photolithographic operations: actinic radiation is directed onto a photomask having one or more photomask structural features, and one or more shape features are produced in each of the plurality of shapes corresponding to the one or more structural features, wherein the dimensions of the one or more shape features are smaller than the one or more corresponding structural features. In one embodiment, the dimensions of the one or more shape features are 2 to 10 times smaller than the one or more corresponding structural features. In one embodiment, the actinic radiation is deep ultraviolet radiation or extreme ultraviolet radiation. In one embodiment, the first and second substrates comprise silicon wafers.

[0082] Features of various embodiments have been described above so that those skilled in the art can better understand the aspects of the present disclosure. It should be clear to those skilled in the art that they can readily use the present disclosure as a basis for designing or modifying other methods and structures to achieve the same objectives and / or to obtain the same advantages as in the embodiments presented here. Those skilled in the art should also recognize that such equivalent interpretations do not deviate from the fundamental concept and scope of protection of the present disclosure and that they can make various changes, substitutions, and modifications without deviating from the fundamental concept and scope of protection of the present disclosure.

Claims

[1] Method for producing a nano-embossed lithography replica comprising the following steps: Deposition of a first resist layer over a substrate; selective exposure of the first resist layer with initial actinic radiation; Developing the selectively exposed first resist layer to create a structure in the first resist layer; Extending the structure in the first resist layer into the substrate to create a shape within the substrate; Removal of the first resist layer from the substrate; Deposition of a second resist layer over a replica blank; Bringing the second resist layer into contact with the mold; Exposure of the second resist layer with a second actinic radiation; Separating the mold and the exposed second resist layer, where a structure is created in the exposed second resist layer; Extending the structure in the second resist layer into the replica blank; and Removing the second resist layer from the replica blank to produce a replica. [2] Method according to claim 1, wherein the selective exposure of the first resist layer with a first actinic radiation comprises directing the first actinic radiation onto a photomask. [3] Method according to claim 1 or 2, wherein the first actinic radiation is deep ultraviolet or extreme ultraviolet radiation. [4] Method according to one of the preceding claims, wherein the exposure of the second resist layer to the second actinic radiation hardens exposed parts of the second resist layer. [5] Method according to any of the preceding claims, wherein the second actinic radiation is ultraviolet radiation. [6] Method according to any of the preceding claims, wherein the deposition of the second resist layer over a replica blank comprises ejecting droplets of a second resist layer material from an inkjet printer over the replica blank. [7] Method according to one of the preceding claims, wherein during the exposure of the second resist layer with the second actinic radiation, the second actinic radiation passes through the replica blank to expose the second resist layer. [8] A method according to any of the preceding claims, wherein the substrate is made from one or more materials selected from the group consisting of: silicon, a silicon oxide, a silicon nitride, carbon, SiOC, SiON, SiOCN, a metal, a metal oxide and an ultraviolet radiation-absorbing organic compound. [9] Method according to any of the preceding claims, wherein the substrate comprises a silicon wafer. [10] Method according to any of the preceding claims, wherein the replica blank is made of quartz glass. [11] Method for producing a nano-embossed lithography replica comprising the following steps: Deposition of a first resist layer over a substrate; Exposure of the first resist layer with initial structured actinic radiation, where the first structured actinic radiation is structured by a photomask; Developing the exposed first resist layer to create a structure in the first resist layer; Extending the structure in the first resist layer into the substrate to create a structured form in the substrate; Checking the structured form; Determine whether the dimensions of the structured shape are within design parameters; Contacting the structured shape with a second resist layer placed over a replica blank, provided the dimensions of the structured shape are within the design parameters; Exposure of the second resist layer with a second actinic radiation; Separating the mold and the exposed second resist layer, where a structure is created in the exposed second resist layer; Extending the structure in the second resist layer into the replica blank; and Removing the second resist layer from the replica blank to produce a replica. [12] Method according to claim 11, wherein the substrate has a target layer arranged over a wafer. [13] Method according to claim 12, wherein: the wafer is a silicon wafer, and the target layer contains one or more materials from the group consisting of: a silicon oxide, a silicon nitride, carbon, SiOC, SiON, SiOCN, a metal, a metal oxide and ultraviolet radiation-absorbing organic compounds are selected. [14] Method according to any one of claims 11 to 13, wherein the replica blank is made of quartz glass. [15] Method according to any one of claims 11 to 14, wherein during exposure of the second resist layer with the second actinic radiation, the second actinic radiation passes through the replica blank to expose the second resist layer. [16] Method for manufacturing a semiconductor device comprising the following steps: Using photolithographic operations to create a shape on a first substrate; Deposition of a first resist layer over a replica blank; Bringing the first resist layer into contact with the mold; Exposure of the first resist layer with an initial actinic radiation passing through the replica blank to create a structure in the first resist layer, where exposure of the first resist layer with the first actinic radiation hardens exposed parts of the first resist layer; Transferring the structure from the first resist layer to the replica blank to produce a replica; Deposition of a second resist layer over a second substrate; Bringing the replica into contact with the second resist layer; Exposure of the second resist layer with a second actinic radiation passing through the replicate to create a structure in the second resist layer, wherein exposure of the second resist layer to actinic radiation hardens exposed parts of the second resist layer; and Transferring the structure from the second resist layer to the second substrate. [17] The method of claim 16, wherein during the photolithographic operations a third actinic radiation is directed onto a photomask having one or more structural features; and one or more shape features are produced in the mold that correspond to one or more structural features, where the dimensions of one or more shape features are smaller than the one or more corresponding structural features. [18] Method according to claim 17, wherein the dimensions of one or more shape features are 2 to 10 times smaller than the one or more corresponding structural features. [19] Method according to claim 17 or 18, wherein the third actinic radiation is deep ultraviolet radiation or extreme ultraviolet radiation. [20] Method according to any one of claims 16 to 19, wherein the first and the second substrate comprise silicon wafers.

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