Device for capturing one or more particles and associated method and system

Abstract

A device for capturing one or more particles comprises a first radio frequency (RF) electrode, a second RF electrode, and a plurality of direct current (DC) electrodes. The first RF electrode and the second RF electrode extend in a first direction. The first RF electrode comprises a first side and a second side. The second side of the first RF electrode is arranged opposite the first side of the first RF electrode. The second RF electrode comprises a first side and a second side. The second side of the second RF electrode is arranged opposite the first side of the second RF electrode. The first side of the first RF electrode faces the first side of the second RF electrode. In a central region of the first RF electrode and the second RF electrode, the first side of the first RF electrode and the first side of the second RF electrode have a first distance d 1,cto each other. In the central region of the first RF electrode and the second RF electrode, the second side of the first RF electrode and the second side of the second RF electrode have a second distance d 2,c to each other. In an end region of the first RF electrode and the second RF electrode, one or both of the following applies: (i) the first side of the first RF electrode and the first side of the second RF electrode have a distance d1 that is greater than the first distance d 1,c and (ii) the second side of the first RF electrode and the second side of the second RF electrode have a distance d2 which is smaller than the second distance d 2,c is.

Description

BACKGROUND

[0001] Trapped particles (such as electrons, ions, or molecules) are a promising candidate for use as qubits (quantum bits) in quantum computers. Trapped particles (such as electrons, ions, or molecules) can also be used in metrology (e.g., in atomic clocks).

[0002] Felix Stopp et al. (2021) arXiv:2108.06948v1 [quant-ph] discloses that an ion trap is used, where ions are extracted and released into free space. The ion trajectories are reflected, and the ions entering the ion trap from free space are captured. To both release the ions into free space and capture the ions from free space, the radio frequency (RF) signal of the ion trap is ramped (e.g., by increasing / decreasing the amplitude of the applied RF voltage over a given period of time).

[0003] In practical applications, precisely tuning the ramping of the RF signal can be challenging. Therefore, it may be desirable to provide an improved trapping device that can allow one or more particles (such as ions) to be directed away from the trapping device and / or to capture one or more particles (such as ions). It may also be desirable to provide a system and method that can utilize at least some of the principles described above. SUMMARY

[0004] According to embodiments, a device for capturing one or more particles comprises a first radio frequency (RF) electrode, a second RF electrode, and a plurality of direct current (DC) electrodes. The first RF electrode and the second RF electrode may extend in a first direction. The first RF electrode may comprise a first side and a second side. The second side of the first RF electrode may be arranged opposite the first side of the first RF electrode. The second RF electrode may comprise a first side and a second side. The second side of the second RF electrode may be arranged opposite the first side of the second RF electrode. The first side of the first RF electrode may face the first side of the second RF electrode. In a central region of the first RF electrode and the second RF electrode, the first side of the first RF electrode and the first side of the second RF electrode may be separated by a first distance d 1,cto each other. In the central region of the first RF electrode and the second RF electrode, the second side of the first RF electrode and the second side of the second RF electrode can have a second distance d 2,c to each other. In an end region of the first RF electrode and the second RF electrode, one or both of the following may apply: (i) the first side of the first RF electrode and the first side of the second RF electrode have a distance d1 that is greater than the first distance d 1,c and (ii) the second side of the first RF electrode and the second side of the second RF electrode have a distance d2 which is smaller than the second distance d 2,c is.

[0005] According to embodiments, a system comprises a first device for capturing one or more particles and a second device for capturing one or more particles. The first device may be configured to capture at least one particle provided by a particle source. The second device may be configured to receive the at least one particle from the first device and perform one or more quantum gate operations on the at least one particle.

[0006] According to embodiments, a method for providing one or more particles to a device for capturing one or more particles comprises capturing, by a first device, at least one particle provided from a particle source. The method may further comprise providing, by the first device, the at least one particle to a second device. The method may further comprise receiving the at least one particle by the second device. The method may further comprise performing, by the second device, one or more quantum gate operations on the at least one particle. Those skilled in the art will recognize additional features and advantages upon reading the following detailed description and viewing the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The present disclosure is illustrated by way of example and not limitation in the figures of the accompanying drawings, in which like reference numerals refer to similar or identical elements. The elements of the drawings are not necessarily to scale relative to one another. The features of the various illustrated examples may be combined, provided they are not mutually exclusive, and / or may be selectively omitted where not described as necessarily required. Fig. 1A illustrates a top view of an apparatus for trapping one or more particles (such as ions) according to an example of the present disclosure. Fig. 1B illustrates a top view of an apparatus for trapping one or more particles (such as ions) according to another example of the present disclosure. Fig. 1C illustrates a top view of an apparatus for trapping one or more particles (such as ions) according to yet another example of the present disclosure. Fig. 2A illustrates a cross-sectional view of a device for trapping one or more particles (such as ions) according to an example of the present disclosure. Fig. 2B illustrates a cross-sectional view of a device for trapping one or more particles (such as ions) according to an example of the present disclosure. Fig. 2C illustrates a cross-sectional view of a device for trapping one or more particles (such as ions) according to another example of the present disclosure. Fig. 3 illustrates a top view of an apparatus for trapping one or more particles (such as ions) according to an example of the present disclosure. Fig. 4 illustrates a plan view of an apparatus for trapping one or more particles (such as ions) according to an example of the present disclosure. Fig. 5 illustrates a top view of an apparatus for trapping one or more particles (such as ions) according to an example of the present disclosure. Fig. 6 illustrates a top view of an apparatus for trapping one or more particles (such as ions) according to an example of the present disclosure. Fig. 7 illustrates a top view of an apparatus for trapping one or more particles (such as ions) according to an example of the present disclosure. Fig. 8 illustrates a system including a first device for capturing one or more particles (such as ions) and a second device for capturing one or more particles according to an example of the present disclosure. Fig. 9 illustrates a method for providing one or more particles (such as ions) to a device for capturing one or more particles.

[0008] Further examples are explained below with reference to the drawings. The drawings are intended to illustrate specific principles, so only aspects necessary for understanding those principles are shown in the drawings. Additional elements serving different functionality may be present in the illustrated devices, methods, and systems but may not be shown in the drawings. DETAILED DESCRIPTION

[0009] The devices described herein can be configured to trap one or more particles (such as ions, molecules, or electrons) and control the trapped particles. In particular, the trapped particles can be physically grouped into particle chains (or crystals). A particle chain can include one or more particles of the same or different species, where each of the particles (e.g., ions) can represent a physical qubit. In some examples, the devices described herein can be used for quantum computing, but are not limited to this. Trapped ions are one of the most promising candidates for use as qubits in quantum computers because they can be trapped with long lifetimes in a scalable array using electromagnetic fields. Other applications can be in the field of atomic clocks.

[0010] The trapped particles can be moved (or transported) back and forth along shuttle paths of the device. The shuttle paths can include straight sections, but also intersections, such as X-intersections and / or T-intersections. For example, the shuttle paths can extend across multiple electrodes of the trapping device. Time-dependent electric fields can be used to move the particles back and forth along the shuttle paths. The reciprocating motion of the particles can be controlled by electrical voltages applied to the device's electrodes. In particular, the particles can be moved along shuttle paths using alternating current (AC) and direct current (DC) voltages, which can be separately coupled to specific electrodes of the device.For example, the electrodes may include one or more radio frequency (RF) electrodes for RF trapping and a plurality of DC electrodes for trapping with static electric fields and / or for moving the particles within the trapping device. Trap devices as described herein may be configured to trap a plurality of particles, which may be individually addressable and movable by appropriately controlling the electrical voltages of the electrodes.

[0011] In a specific, but non-limiting, example, the trapping devices described herein may correspond to or include a surface trapping device (such as a Paul trap), where all electrodes (i.e., the DC electrodes and the RF electrodes) may be disposed in a same single plane (e.g., in a patterned electrode layer disposed on a substrate). The particles may be trapped and reciprocated above this single plane. However, it should be understood that the concepts described herein are not limited to surface trapping devices. In further examples, devices for controlling trapped particles according to the disclosure may also be based on three-dimensional (3D) trapping geometries.

[0012] It will now Fig. 1A- Fig. 1C, which illustrate typical layouts of a device 100A, 100B, 100C for trapping one or more particles. The drawings are intended to illustrate certain principles, so only aspects necessary for understanding those principles are shown. For example, the devices 100A, 100B, 100C may include additional DC electrodes, e.g., for compensating interference fields (e.g., connected to a ground potential or other compensation potential) and / or for shielding, which are not illustrated in the drawings.

[0013] The device 100A, 100B, 100C comprises a first radio frequency (RF) electrode 110, a second RF electrode 120 and a plurality of direct current (DC) electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150. These electrodes may be arranged over a substrate 160.

[0014] The first RF electrode 110 may extend in a first direction x and may include a first side 112, a second side 114, and a first end 116. The first RF electrode 110 may further include a second end located further down in the x-direction, which may be Fig. 1A- Fig. 1C is not shown. The first side 112 and the second side 114 of the first RF electrode 110 are spaced apart from each other along a second direction y (which may be orthogonal to the first direction x). The second side 114 of the first RF electrode 110 is arranged opposite the first side 112 of the first RF electrode 110. Typically, the first end 116 and also the second end of the first RF electrode have a straight shape and are arranged at a 90° angle with respect to the first side 112 and the second side 114 of the first RF electrode 110.

[0015] The first direction x and the second direction y may be parallel to a first main surface of the substrate 160 and may be referred to as lateral directions. Typically, particles may be trapped in a region spaced from the first RF electrode 110 and the second RF electrode 120 in a third direction z (which may be orthogonal to the first direction x and the second direction y). The third direction may be orthogonal to a first main surface of the substrate 160 and may be referred to as a vertical direction. The second RF electrode 120 may extend in the first direction x and may include a first side 122, a second side 124, and a first end 126. The second RF electrode 120 may further include a second end that is further down in the x-direction, which in Fig. 1A- Fig. 1C is not shown. The first side 122 and the second side 124 of the second RF electrode 120 are spaced apart from each other along the second direction y. The second side 124 of the first RF electrode 120 is arranged opposite the first side 122 of the first RF electrode 120. Typically, the first end 126 and also the second end of the second RF electrode 120 have a straight shape and are arranged at a 90° angle with respect to the first side 122 and the second side 124 of the second RF electrode 120.

[0016] In the device 100A, 100B, 100C, as in Fig. 1A- Fig. 1C, the first side 112 of the first RF electrode 110 faces the first side 122 of the second RF electrode 120. In other words, the first side 112 of the first RF electrode and the first side 122 of the second electrode may be arranged closer to each other compared to the second sides 114 and 124 of the first and second RF electrodes 110 and 120.

[0017] The device 100A, 100B, 100C comprises a central region 170 and an end region 180 of the first RF electrode 110 and the second RF electrode 120. In the central region 170 of the first RF electrode 110 and the second RF electrode 120, the first side 112 of the first RF electrode 110 and the first side 122 of the second RF electrode 120 can have a first distance d 1,c to each other. The first distance d 1,c can be measured along the second direction y (e.g. in the case of a surface capture device, as described in relation to Fig. 2A, or in relation to a 3D capture device as shown in relation to Fig. 2B). In other examples, the first distance d 1,c along a direction (which may be different from the second direction y) lying in a plane passing through the second direction y and the third direction z (as with respect to Fig. 2C) and which is orthogonal to the first direction x.

[0018] In the central region 170 of the first RF electrode 110 and the second RF electrode 120, the second side 112 of the first RF electrode 110 and the second side 122 of the second RF electrode 120 have a second distance d 2,c to each other. The second distance d 2,c can be measured along the second direction y (e.g. in the case of a surface capture device, as described in relation to Fig. 2A, or in relation to a 3D capture device as shown in relation to Fig. 2B). In other examples, the first distance d 1,c along a direction (which may be different from the second direction y) lying in a plane passing through the second direction and the third direction (as with respect to Fig. 2C) and which is orthogonal to the first direction x. The second distance d2,c is greater than the first distance d 1,c .

[0019] In the examples shown by Fig. 1A- Fig. 1C is the first distance d 1,c in the central region 170 and in the end region 180 of the first RF electrode 110 and the second RF electrode 120 is substantially constant. Similarly, the second distance d 2,c in the central region 170 and in the end region 180 of the first RF electrode 110 and the second RF electrode 120 is substantially constant. In the context of the present disclosure, a value that is substantially constant or two values ​​that are substantially equal is intended to mean that the value is constant or the two values ​​are equal within typical processing variations. In one example, the first distance d 1,c in a range between 10 µm and 1000 µm, such as between 100 µm and 250 µm (such as 160 µm), and the second distance d 2,ccan be in a range between 50 µm and 5000 µm, such as between 500 µm and 750 µm (such as 660 µm). However, other values ​​are possible, and these exemplary values ​​should not be interpreted as limiting.

[0020] The first RF electrode 110 of the device 100A, 100B, 100C may have a width defined as a third distance d 3,c between the first side 112 of the first RF electrode 110 and the second side 114 of the first RF electrode 110. The third distance d 3,c can be measured along the second direction y. The second RF electrode 110 of the device 100A, 100B, 100C can have a width defined as a fourth distance d 4,c between the first side 122 of the second RF electrode 120 and the second side 124 of the second RF electrode 110. The fourth distance d 4,c can be measured along the second direction y. As with respect to Fig. 1A- Fig. 1C, the third distance d 3,c in the device 100A, 100B, 100C is substantially constant and the fourth distance d 4,c is substantially constant in the central region (170) and in the end region 180 of the first RF electrode 110 and the second RF electrode 120. The third distance d 3,c and the fourth distance d 4,c can be measured along the second direction y.

[0021] In some examples, the third distance d 3,c substantially equal to the fourth distance d 4,c In other embodiments, the third distance d 3,c from the fourth distance d 4,c In one example, the third distance d 3,c in a range between 20 µm and 3 mm, such as between 100 µm and 750 µm (such as 250 µm), and the fourth distance d 4,ccan be in a range between 100 µm and 3 mm, such as between 100 µm and 750 µm (such as 250 µm). However, other values ​​are possible, and these exemplary values ​​should not be interpreted as limiting.

[0022] The first and second RF electrodes 110 and 120 of the devices 100A, 100B, 100C, as exemplified in Fig. 1A- Fig. 1C are essentially the same. Devices 100A, 100B, and 100C differ only in the arrangement of the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150. In general, the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150 are arranged in proximity (such as adjacent) to the first RF electrode 110 and the second RF electrode 120. For example, the first RF electrode 110, the second RF electrode 120, and the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n, 150 may be part of a (common) metallization structure (obtained, for example, by patterning one or more metallization layers) arranged on the substrate 160.

[0023] As in Fig. 1A- Fig. 1C, the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150 may be arranged adjacent to the first RF electrode 110 and the second RF electrode 120 in the central region 170 and optionally also in the end region 180.

[0024] It will now Fig. 1A and Fig. 1B, the device 100A, 100B comprises a first set 1301, ..., 130 n the variety of DC electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150 arranged adjacent to the second side 114 of the first RF electrode 110, and a second set 1401, ..., 140 n the variety of DC electrodes 1301, ..., 130 n, 1401, ..., 140 n , 150 disposed adjacent to the second side 124 of the second RF electrode 120.

[0025] In addition, and as in Fig. 1A and Fig. 1B, at least one further DC electrode 150 of the plurality of DC electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150 may be arranged between the first side 112 of the first RF electrode 110 and the first side 122 of the second RF electrode 120. This further DC electrode 150 may be a single electrode (as exemplified in Fig. 1A) or comprise a plurality of segments (as exemplified in Fig. 1B).

[0026] Another example is exemplary in relation to Fig. 1C, where the first set 1301, ..., 130 n the plurality of DC electrodes and the second set 1401, ..., 140 nthe plurality of DC electrodes is not present. In the exemplary embodiments defined by Fig. 1A and Fig. 1B, the first sentence 1301, ..., 130 n the plurality of DC electrodes and the second set 1401, ..., 140 n The plurality of DC electrodes can be used to provide a trapping potential, and the at least one further DC electrode 150 can be used for one or more of shielding, interference field compensation, and improving the trapping potential. The device 100C, as shown in Fig. 1C, comprises a plurality (e.g., three or more) of the at least one further DC electrode 150 disposed between the first side 112 of the first RF electrode 110 and the first side 122 of the second RF electrode 120. In the exemplary embodiment illustrated in Fig. 1C, the plurality of further DC electrodes 150 are configured to provide a trapping potential for trapping one or more ions. The exemplary device 100C shown in Fig. 1C includes at least seven DC electrodes 150. However, the present disclosure is not limited to seven DC electrodes 150, but more or fewer electrodes 150 may be present. In one example, only three DC electrodes 150 may be present.

[0027] Referring again to one of the Fig. 1A- Fig. 1C, the substrate 160 may have a top surface (also referred to as a first main surface) on which the first RF electrode 110, the second RF electrode 120 and the plurality of DC electrodes 1301, ..., 130 n , 1401, ..., 140 n, 150 are arranged. In examples, the top surface of the substrate 160 may be substantially planar. In embodiments, the substrate 160 may comprise one or more of semiconductor material (such as Si, SiC, and GaN, or similar materials), fused silica or quartz gas, and sapphire. Although not limited to these values, the substrate 160 may have a thickness of 400 µm to 1 mm (such as 725 µm or 750 µm).

[0028] The first RF electrode 110, the second RF electrode 120 and the plurality of DC electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150 can be connected to signal lines (in Fig. 1A- Fig. 1C) to provide corresponding signals to these electrodes. For example, the signal lines may be conductors arranged on the surface of the substrate 160. Additionally, or as an alternative, signal lines may be routed in a further patterned metal layer disposed between the RF and / or DC electrodes 110, 120, 1301, ..., 130 n , 1401, ..., 140 n , 150 and the substrate 160. As yet another alternative, signal lines may extend through the substrate 160 and the RF and / or DC electrodes 110, 120, 1301, ..., 130 n , 1401, ..., 140 n , 150 to a metallization structure on the opposite side of the substrate 160. The signal lines can be connected to corresponding signal generators (such as digital-to-analog converters in the case of the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n, 150 or a resonator in the case of the first and second RF electrodes 110, 120), which provide the corresponding signals to the electrodes. The corresponding signal generators can be connected via one or more intermediate circuit elements, such as capacitors or other filters.

[0029] The first RF electrode 110, the second RF electrode 120 and the plurality of DC electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150 are configured to generate a trapping potential (such as an electromagnetic field) for trapping one or more particles (such as ions, molecules, or electrons). For example, the plurality of DC electrodes 1301, ..., 130 n , 1401, ..., 140 n, 150 generate a potential (e.g., a static electric field) that confines the one or more particles in the first direction x, and the first RF electrode 110 and the second RF electrode 120 can generate a potential (e.g., an electromagnetic RF field) that confines the one or more particles in the second direction y and in the third direction z (which is orthogonal to the first and second directions). This can result in a potential (e.g., an electromagnetic field) that traps the one or more particles in all three spatial directions. Typically, the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n, 150 is further configured (such as in addition to capturing) to move (such as reciprocating) the one or more particles from a first position of the device 100A, 100B, 100C to a second position of the device 100A, 100B, 100C by applying respective voltage signals to the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150 can be created.

[0030] In practical applications, the signals applied to the first RF electrode 110 and the second RF electrode 120 may be the same. The signal applied to the first RF electrode 110 and the second RF electrode 120 typically comprises a constant amplitude A and a constant frequency ω and can be represented as V RF = A × sin ωt.

[0031] The signals sent to the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n, 150 can vary in time depending on the application. For example, if one or more particles are to be captured at a position of the device 100A, 100B, 100C, one or a pair of the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150 provide a lower potential than the rest of the DC electrodes.

[0032] In the central region 170, the potential generated by the first RF electrode 110 and the second RF electrode 120 may have a contribution to the first direction x that is negligible when compared to the potential in the first direction x generated by the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n, 150. In the end region 180 of the device 100A, 100B, 100C, the potential generated by the first RF electrode 110 and the second RF electrode 120 may have a contribution to the first direction x that is not negligible when compared to the potential in the first direction generated by the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150. In other words, the first RF electrode 110 and the second RF electrode 120 may create a potential barrier in the first direction x in the end region 180. This may prevent the one or more particles captured by the device 100A, 100B, 100C from leaving the capture device (e.g., this may slow down and stop one or more particles traveling along the first direction x toward the ends 116 and 126 of the first and second RF electrodes 110 and 120).

[0033] It will now Fig. 2A- Fig. 2C, wherein like reference numerals refer to the same or similar elements as in Fig. 1A- Fig. 1C. The device 100A, 100B, 100C, as shown in Fig. 1A- Fig. 1C may comprise a single substrate 160, as exemplified in Fig. 2A (sometimes referred to as 2D capture device 200A or surface capture device 200A). The device 200A, which is exemplified in Fig. 2A may be a cross-section along the second and third directions y, z (such as the yz-plane) of the device 100A and 100B shown in Fig. 1A and Fig. 1B. As described above with respect to Fig. 1C, some of the DC electrodes of device 200A (such as DC electrodes 130 and 140) may be optional (not shown in Fig. 2A). Again, the devices 200A, 200B, 200C may include additional DC electrodes, e.g., for compensating interference fields (e.g., connected to a ground potential or other compensation potential) and / or for shielding, which are not shown in the drawings.

[0034] Examples of 3D capture devices 200B, 200C are shown in Fig. 2B and Fig. 2C, the trapping device 200B, 200C includes a second substrate 162 (in addition to the first substrate 160). The second substrate 162 is spaced apart from the first substrate 160 along the third direction z. For example, a particle (such as an ion) may be trapped between the first substrate 160 and the second substrate 162.

[0035] In the Fig. 2B, additional DC electrodes 132 and 142 may be arranged on the second substrate 162 such that a surface of the additional DC electrodes 132 and 142 corresponds to a surface of the first RF electrode 110, the second RF electrode 120 and the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150, which are arranged on the first substrate 160. The additional DC electrodes 132 and 142 on the second substrate 162 can be manufactured in a similar manner as the electrodes on the first substrate 160 (e.g., by patterning one or more metal layers on the substrate). In the Fig. 2B, the portion of device 200B disposed on first substrate 160 may be the same or similar to previously discussed devices 100A, 100B, 100C, 200A. Additionally, if additional electrodes 132 and 142 (each of which may include a plurality of electrode segments) are present, the remaining DC electrodes 130, 140, 150 may be omitted in some examples.

[0036] In the exemplary device 200A and 200B shown in Fig. 2A and Fig. 2B, the first RF electrode 110 and the second RF electrode 120 are arranged on a first substrate 160 such that the first RF electrode and the second RF electrode are arranged within a common plane (which would be the xy plane used in the examples of Fig. 2A and Fig. 2B).

[0037] It will now Fig. 2C, an exemplary device 200C is shown, wherein the first RF electrode 110 is arranged on the first substrate 160 and the second RF electrode 120 is arranged on the second substrate 162 such that the first RF electrode 110 and the second RF electrode 120 are arranged in two separate planes. The two separate planes may be parallel to each other and spaced apart from each other in the third direction z. In this example, the first set of DC electrodes 130 and the at least one further DC electrode 150 are arranged on the first substrate 160 and the second set of DC electrodes 140 is arranged on the second substrate, as in Fig. 2C. It is worth noting that the first side 112 of the first RF electrode 110 and the first side 122 of the second RF electrode 120 are still considered to face each other in the context of this disclosure (even though the first and second RF electrodes 110 and 120 are in different planes). Again, the further DC electrode 150 is optional, as described above.

[0038] The layout of a device 100A, 100B, 100C, 200A, 200B, 200C for capturing one or more particles, as described in relation to Fig. 1A- Fig. 2C may be combined in many ways, and the disclosure of the present disclosure as set forth herein is not intended to be limited to any particular one of these layouts.

[0039] It is known from Felix Stopp et al (2021) arXiv:2108.06948v1 [quant-ph] that changing the amplitude A of the RF signal V RFOver a given time Δt (also called ramping), trapped particles can be allowed to leave the trapping device and enter free space. Similarly, particles coming from free space can be trapped by the trapping device. However, in practical applications, timing the ramping can be challenging, and tuning the ramping can be difficult.

[0040] According to examples of the present disclosure, the trap layout may be modified so that trapped particles can exit and enter a trapping device without having to ramp up the amplitude of the RF signal.

[0041] It will now Fig. 3- Fig. 7, which illustrate exemplary devices 300, 400, 500, 600, 700 for capturing one or more particles according to the present disclosure. The same reference numerals as already used with respect to Fig. 1A- Fig. 2C are intended to be the same and will not be described in detail again, but reference is made to what was described above. Again, devices 300, 400, 500, 600, 700 may include additional DC electrodes, e.g., for compensating interference fields (e.g., connected to a ground potential or other compensation potential) and / or for shielding, which are not shown in the drawings.

[0042] The exemplary devices 300, 400, 500, 600, 700 show a similar layout to the device 100A shown in Fig. 1A, and the device 200A shown in Fig. 2A. However, as discussed above, with respect to Fig. 1A- Fig. 2C, other layouts for trapping devices are possible (e.g., wherein the DC electrodes are arranged in a different way and / or some DC electrodes are omitted; or wherein the first RF electrode 110 and the second RF electrode 120 are in two different planes, as in Fig. 2C). The capture device according to the present disclosure is not intended to be limited to the specific layout shown in Fig. 3- Fig. 7, but is intended to include any such variations.

[0043] With further reference to Fig. 3- Fig. 7, the devices 300, 400, 500, 600, 700 are similar to the devices 100A, 100B, 100C, 200A, 200B, 200C, as already described above, in that they have an identical or similar central region 170, wherein the first RF electrode 110, the second RF electrode 120 and the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n, 150, 132, 142 are arranged in a same or similar manner in the central region 170. This can reduce a contribution of the potential generated by the RF electrodes 110 and 120 to the first direction x in the end region 180, thereby allowing trapped particles to more easily exit the trapping device and / or allowing incoming particles to more easily enter the trapping device.

[0044] According to some embodiments, in addition, a part 152 of the at least one further DC electrode 150 located in the end region 180 may follow the shape of the first RF electrode 110 and the second electrode 120, such that respective distances between the first side 112 of the first RF electrode 110 and the further DC electrode(s) 150 and between the first side 122 of the second RF electrode 120 and the further DC electrode(s) 150 remain substantially the same in the edge region 180 as in the central region 170. While in Fig. 3- Fig. 7 the part 152 of the DC electrode 150 is illustrated as part of a single DC electrode 150 extending from the central region 170 to the end region 180, it may also be possible for the part 152 in the end region 180 to be a separate DC electrode or to comprise several DC electrode segments (as for example in Fig. 1B). In some examples, a width of the portion 152 is greater than the first distance d 1,c .The part 152 of the DC electrode 150 in the end region 180, as in Fig. 3- Fig. 7 is not necessarily required, but is an optional feature and may not be present. In this case, no DC electrode or portion of a DC electrode may be present between the first RF electrode 110 and the second RF electrode 120 in the end region 180.

[0045] Although in Fig. 3- Fig. 7, in some examples, an outer side of the end region 180 of the first RF electrode 110 and the second RF electrode 120 may be aligned with an edge of the substrate 160. In other words, the substrate 160 may end (e.g., in the first direction x) where the ends 116 and 126 of the first RF electrode 110 and the second RF electrode are located, such that the ends 116 and 126 are located at an edge of the substrate 160.

[0046] In embodiments, in the end region 180 of the first RF electrode 110 and the second RF electrode 120, one or both of the following two features are met: (i) the first side 112 of the first RF electrode 110 and the first side 122 of the second RF electrode 120 have a distance d1 that is greater than the first distance d 1,cand (ii) the second side 114 of the first RF electrode 110 and the second side 124 of the second RF electrode 120 have a distance d2 that is smaller than the second distance d 2,c The first distance d 1,c and the second distance d 2,c are taken in the central region 170 of the first RF electrode 110 and the second RF electrode 120. As discussed above, the first distance d 1,c between the first side 112 of the first RF electrode 110 and the first side 122 of the second RF electrode 120. The second distance d 2,c is taken between the second side 112 of the first RF electrode 110 and the second side 122 of the second RF electrode 120. The first distance, the second distance d 2,c , the distance d1 and the distance d2 can be measured along a same direction (such as a direction orthogonal to the first direction x, as explained above).

[0047] It will now Fig. 3 and Fig. 5- Fig. 7, which illustrate exemplary capture devices 300, 500, 600, 700 according to the present disclosure. In the exemplary Fig. 3 and Fig. 5- Fig. 7, in the end region 180 of the first RF electrode 110 and the second RF electrode 120, the distance d1 between the first side 112 of the first RF electrode 110 and the first side 122 of the second RF electrode 120 increases towards the end 116 of the first RF electrode 110 and towards the end 126 of the second RF electrode 120 along the first direction x.

[0048] In some embodiments, as exemplified in Fig. 5, the distance d2 between the second side 114 of the first RF electrode 110 and the second side 124 of the second RF electrode 120 decreases towards the end 116 of the first RF electrode 110 and towards the end 126 of the second RF electrode 120.

[0049] In other embodiments, as exemplified in Fig. 6 and Fig. 7, the distance d2 between the second side 114 of the first RF electrode 110 and the second side 124 of the second RF electrode 120 increases towards the end 116 of the first RF electrode 110 and towards the end 126 of the second RF electrode 120.

[0050] According to further embodiments, as exemplified in Fig. 3, the distance d2 between the second side 114 of the first RF electrode 110 and the second side 124 of the second RF electrode 120 remains substantially constant toward the end 116 of the first RF electrode 110 and toward the end 126 of the second RF electrode 120.

[0051] It will now Fig. 4 and Fig. 5, which illustrate exemplary capture devices 400 and 500 according to the present disclosure. In the exemplary Fig. 4 and Fig. 5, in the end region 180 of the first RF electrode 110 and the second RF electrode 120, the distance d2 between the second side 114 of the first RF electrode 110 and the second side 124 of the second RF electrode 120 decreases towards an end 116 of the first RF electrode 110 and towards an end 126 of the second RF electrode 120.

[0052] In one embodiment, as exemplified in Fig. 5, the distance d1 between the first side 112 of the first RF electrode 110 and the first side 122 of the second RF electrode 120 increases towards the end 116 of the first RF electrode 110 and towards the end 126 of the second RF electrode 120.

[0053] In another embodiment, as exemplified in Fig. 4, the distance d1 between the first side 112 of the first RF electrode 110 and the first side 122 of the second RF electrode 120 remains substantially constant toward the end 116 of the first RF electrode 110 and toward the end 126 of the second RF electrode 120. In yet another embodiment, otherwise similar to that shown in Fig. 4, the distance d1 between the first side 112 of the first RF electrode 110 and the first side 122 of the second RF electrode 120 decreases toward the end 116 of the first RF electrode 110 and toward the end 126 of the second RF electrode 120. In this embodiment, the first RF electrode 110 and the second RF electrode 120 have a tapered shape in the end region 180 (e.g., in the end region 180, the decrease in d2 is greater than the decrease in d1).

[0054] It will now Fig. 3, Fig. 5 and Fig. 7, which illustrate exemplary capture devices 300, 500 and 700 according to the present disclosure. In the exemplary Fig. 3, Fig. 5 and Fig. 7, in the end region 180 of the first RF electrode 110 and the second RF electrode 120, the first side 112 of the first RF electrode 110 and the second side 114 of the first RF electrode 110 have a distance d3 which is smaller than the third distance d 3,c is (where d 3,c according to what was described above, in the central region 170). Additionally or as an alternative, in the end region 180 of the first RF electrode 110 and the second RF electrode 120, the first side 122 of the second RF electrode 120 and the second side 124 of the second RF electrode 120 have a distance d4 that is smaller than the fourth distance (d 4,c according to what was described above, in the central area 170).

[0055] It will now Fig. 6, which illustrates an exemplary capture device 600 according to the present disclosure. In the exemplary Fig. 6, in the end region 180 of the first RF electrode 110 and the second RF electrode 120, the first side 112 of the first RF electrode 110 and the second side 114 of the first RF electrode 110 have a distance d3 which is substantially equal to the third distance d 3,c and the first side 122 of the second RF electrode 120 and the second side 124 of the second RF electrode 120 have a distance d a which is essentially equal to the fourth distance d 4,c is (d 3,c and d 4,c according to what was described above, in the central area 170).

[0056] It will now Fig. 3- Fig. 5 and Fig. 7, which illustrate exemplary capture devices 300, 400, 500, and 700 according to the present disclosure. In the embodiments exemplified in Fig. 3- Fig. 5 and Fig. 7, in the end region 180 of the first RF electrode 110 and the second RF electrode 120, the first RF electrode 110 and the second RF electrode 120 each have a tapered shape.

[0057] It will now Fig. 3 and Fig. 5- Fig. 7, which illustrate exemplary capture devices 300, 500, 600, and 700 according to the present disclosure. In the embodiments exemplified in Fig. 3 and Fig. 5- Fig. 7, in the end region 180 of the first RF electrode 110 and the second RF electrode 120, the first RF electrode 110 and the second RF electrode 120 are spaced further apart from each other compared to the central region 170.

[0058] Although the exemplary devices 300, 400, 500, 600, 700 are illustrated with linearly varying distances d1, d2, d3, and d4 in the end region 180, different inclinations are also possible, and the present disclosure is not intended to be limited to linear inclinations. Similarly, although the exemplary devices 300, 400, 500, and 700 are illustrated with a sharp end 116 of the first RF electrode 110 and a sharp end 126 of the second RF electrode 120, the ends 116 and 126 do not necessarily have to be sharp, so different shapes of the ends 116 and 126 are also intended to be encompassed by the present disclosure.

[0059] The following illustrates exemplary applications of the capture device 300, 400, 500, 600, 700 according to the present disclosure. For example, since an RF signal applied to the first RF electrode 110 and the second RF electrode 120 may remain unchanged while particles exit or enter the capture device (e.g., the amplitude may remain constant), the capture device 300, 400, 500, 600, 700 according to the present disclosure may enable a mode of operation in which some particles are trapped in the central region 170 of the capture device 300, 400, 500, 600, 700, while simultaneously allowing other particles to enter or exit the end region 180 of the same capture device 300, 400, 500, 600, 700.In other words, the same pair of first RF electrode 110 and second RF electrode 120 can be used for both trapping and loading / unloading particles in the trapping device 300, 400, 500, 600, 700. For trapping device layouts that require RF ramping to send particles into free space or to recapture the particles from free space at the end region, RF ramping may not allow a different set of particles to be trapped in the mid-region of the same devices (instead, the trapped particles in the mid-region may be lost due to RF ramping).

[0060] For example, the device 300, 400, 500, 600, 700 for capturing one or more particles according to the present disclosure may be configured to capture one or more particles at the end region 180 of the first RF electrode 110 and the second RF electrode 120 and to trap the one or more captured particles in the middle region 170 of the first RF electrode 110 and the second RF electrode 120 using the plurality of DC electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150. In the same or other examples, an RF signal applied to the first RF electrode 110 and the second RF electrode 120 may remain unchanged (such as the amplitude A and the frequency ω of the RF signal V RFmay remain constant) during the pickup of the one or more particles at the end region 180 of the first RF electrode 110 and the second RF electrode 120. For example, at least some of the plurality of DC electrodes 1301, ..., 130 n , 1401, ..., 140 n , 150, 132, 142 may be used to receive (such as trap) the one or more particles. In other examples, additional DC electrodes disposed on the first substrate 160 or the second substrate 162 may be used to receive (such as trap) the one or more particles. For example, DC voltage pulses may be applied to the mentioned electrodes to trap the particles.

[0061] In still the same or different examples, the device 300, 400, 500, 600, 700 is configured to accelerate one or more particles from the central region 170 toward the end region 180 such that the one or more particles leave the end region 180. In the same or other examples, an RF signal applied to the first RF electrode 110 and the second RF electrode 120 may remain unchanged (e.g., the amplitude A and the frequency ω of the RF signal VRF may remain constant) during the acceleration of the one or more particles in the end region 180 of the first RF electrode 110 and the second RF electrode 120. For example, at least some of the plurality of DC electrodes 1301, ..., 130 n , 1401, ..., 140 n, 150, 132, 142 may be used to accelerate the one or more particles. In other examples, additional electrodes disposed on the first substrate 160 or the second substrate 162 may be used to accelerate the one or more particles. Additionally, or as an alternative, electrodes not disposed on either of the first and second substrates (not shown) may be used to accelerate the one or more particles.

[0062] With regard to the velocity of incoming particles to be captured with the device 300, 400, 500, 600, 700 according to the present disclosure, it will be clear to those skilled in the art that the direction of the velocity should point toward the first direction x (in which the first RF electrode 110 and the second RF electrode 120 extend). In addition, it will be clear to those skilled in the art that the kinetic energy of the incoming particles is higher than the remaining potential in the first direction x in the end region 180 of the capture device 300, 400, 500, 600, 700 and lower than the potentials in the first, second, and third directions in the central region 170 of the capture device formed by the first RF electrode 110, the second RF electrode 120, and the DC electrodes 1301, ..., 130 n , 1401, ..., 140 n, 150, 132, 142 for capturing the particles. The direction and kinetic energy of the incoming particles can be controlled by suitable measures (e.g., using one or more Sikler lenses) known to those skilled in the art.

[0063] Fig. 8 illustrates yet another application for one or more of the capture devices described in the present disclosure. Fig. 8 illustrates a system 800 including a first device 810 for capturing one or more particles (such as ions, molecules, or electrons) and a second device 820 for capturing one or more particles, according to an example of the present disclosure.

[0064] In general, the first capture device 810 and the second capture device may be any of the capture devices 100A, 100B, 100C, 200A, 200B, 200C, 300, 400, 500, 600, 700 as described above with reference to Fig. 1A- Fig. 7. In some embodiments, one or both of the first capture device 810 and the second capture device 820 is a capture device 300, 400, 500, 600, 700, as described above with reference to Fig. 3- Fig. 7. In other embodiments, one or both of the first device 810 and the second device 820 may be a capture device, as described with respect to Fig. 1A- Fig. 1C, and ramping of the RF signal may be used to send the one or more particles from the first device 810 to the second device 820.

[0065] In some practical applications, one or more particles are loaded from a particle source 840 to a trapping device to perform one or more quantum gate operations (e.g., for quantum computation). Typically, the particle source 840 is located in close proximity to the trapping device 810 or is integrated into it. When ions are loaded into a trapping device 810, a typical problem is that some of the particles coming from the particle source 840 can enter the central region 180 of the trapping device 810 but may not be captured by the trapping device 810. This can cause contamination of surfaces of at least one of the first RF electrode, the second RF electrode 110, 120, and the plurality of DC electrodes 1301, ..., 130 n , 1401, ..., 140 n, 150, 132, 142, which in turn can cause disturbing fields that can influence or degrade the trapping potential of the electrodes.

[0066] According to the present disclosure, a first trapping device 810 may be used to trap one or more particles from a particle source 840, and a separate second trapping device 820 may be used to perform one or more quantum gate operations on the one or more particles.

[0067] The first device 810 may be configured to provide the one or more captured particles to the second device 820 for further processing. In some examples, a valve element 830 may be present between the first device 810 and the second device 820, which can only open when one or more particles are provided from the first device 810 to the second device 820.

[0068] The second device 820 may be further configured to capture the one or more particles and then move the one or more particles from a first position of the second device 820 to a second position of the second device 820, where a quantum gate operation unit 850 may be present.

[0069] According to embodiments, the first device 810 and the second device 820 may be spaced apart by a distance greater than the second distance d 2,c According to examples, the quantum gate operation unit 850 may include applying one or more of a laser light and a microwave to the one or more trapped particles.

[0070] In one example, particle source 840 may include an ablation target and one or more ionization lasers. In the same or another example, particle source 840 may include a magneto-optical trap.

[0071] The valve element 830 may include a tube and / or a valve for controlling the transport of the one or more particles from the first device 810 to the second device 820.

[0072] Separating the first device 810 (used to collect the particles from the particle source 840) from the second device 820 (used to perform the quantum gate operation) may prevent or reduce surface contamination of the electrodes in the second device 820. Surface contamination may be acceptable for the first device 810, for example, if the first device 810 is used only to deliver the particles to the second trap 820 and not to perform quantum gate operations. The second device 820 may be free of any additional particle source (except for the particles provided to the second device 820 by the first device 810).

[0073] Fig. 9 illustrates a method 900 for providing one or more particles (such as ions) to a device for capturing one or more particles. For example, the method 900 may be used in conjunction with a system 800 as described above with reference to Fig. 8 described as an example.

[0074] The method 900 comprises capturing 910, by a first device 810, at least one particle provided by a particle source 840. The method 900 further comprises providing 920, by the first device, the at least one particle to a second device 820. The method 900 further comprises picking up 930, by the second device 820, the at least one particle. The method 900 optionally further comprises moving the at least one picked up particle from a first position of the second device 820 to a second position of the second device 820. The method 900 further comprises performing 950 one or more quantum gate operations on the at least one particle.

[0075] The examples described herein provide: Example 1. Device (200A, 200B, 200C, 300, 400, 500, 600, 700) for capturing one or more particles, the device comprising: a first radio frequency (RF) electrode (110), a second RF electrode (120) and a plurality of direct current (DC) electrodes (1301, ..., 130 n , 1401, ..., 140 n , 150, 132, 142); wherein the first RF electrode (110) and the second RF electrode (120) extend in a first direction (x), wherein the first RF electrode (110) comprises a first side (112) and a second side (114), wherein the second side (114) of the first RF electrode (110) is arranged opposite the first side (112) of the first RF electrode (110), wherein the second RF electrode (120) comprises a first side (122) and a second side (124), wherein the second side (124) of the second RF electrode (120) is arranged opposite the first side (122) of the second RF electrode (120), wherein the first side (112) of the first RF electrode (110) faces the first side (122) of the second RF electrode (120), wherein in a central region (170) of the first RF electrode (110) and the second RF electrode (120), the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120) have a first distance (d 1,c ) to each other, wherein in the central region (170) of the first RF electrode (110) and the second RF electrode (120), the second side (112) of the first RF electrode (110) and the second side (122) of the second RF electrode (120) have a second distance (d 2,c ) to each other, and wherein in an end region (180) of the first RF electrode (110) and the second RF electrode (120), one or both of the following features are present: the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120) have a distance (d1) that is greater than the first distance (d 1,c ), and the second side (114) of the first RF electrode (110) and the second side (124) of the second RF electrode (120) have a distance (d2) which is smaller than the second distance (d 2,c ) is. Example 2. The device (200A, 200B, 300, 400, 500, 600, 700) of Example 1, wherein the first RF electrode (110) and the second RF electrode (120) are arranged on a first substrate (160) such that the first RF electrode and the second RF electrode are arranged within a common plane. Example 3. The device (200C, 300, 400, 500, 600, 700) of Example 1, wherein the first RF electrode (110) is disposed on a first substrate (160) and the second RF electrode (120) is disposed on a second substrate (162) such that the first RF electrode and the second RF electrode are disposed in two separate planes. Example 4. Device (200A, 200B, 200C, 300, 400, 500, 600, 700) according to one of the preceding examples, wherein in the central region (170) of the first RF electrode (110) and the second RF electrode (120), the first distance (d 1,c ) between the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120) is substantially constant. Example 5. Device (200A, 200B, 200C, 300, 400, 500, 600, 700) according to one of the preceding examples, wherein in the central region (170) of the first RF electrode (110) and the second RF electrode (120), the second distance (d 2,c) between the second side (114) of the first RF electrode (110) and the second side (124) of the second RF electrode (120) is substantially constant. Example 6. Device (200A, 200B, 200C, 300, 400, 500, 600, 700) according to one of the preceding examples, wherein the distance (d1), the distance (d2), the first distance (d1, c ) and the second distance (d 2,c ) in a direction orthogonal to the first direction (x). Example 7. Device (200A, 200B, 200C, 300, 400, 500, 600, 700) according to one of the preceding examples, wherein the plurality of DC electrodes (1301, ..., 130 n , 1401, ..., 140 n , 150) is arranged adjacent to the first RF electrode (110) and the second RF electrode (120) in the central region (170) of the first RF electrode (110) and the second RF electrode (120). Example 8. Device (200A, 200B, 200C, 300, 400, 500, 600, 700) according to Example 7, wherein a first set (1301, ..., 130 n ) of the plurality of DC electrodes (1301, ..., 130 n , 1401, ..., 140 n , 150) is arranged adjacent to the second side (114) of the first RF electrode (110), and wherein a second set (1401, ..., 140 n ) of the plurality of DC electrodes (1301, ..., 130 n , 1401, ..., 140 n , 150) is arranged adjacent to the second side (124) of the second RF electrode (120). Example 9. Device (200A, 200B, 200C, 300, 400, 500, 600, 700) according to Example 8, wherein at least one further DC electrode (150) of the plurality of DC electrodes (1301, ..., 130 n , 1401, ..., 140 n , 150) is arranged between the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120). Example 10. Device (200A, 200B, 200C, 300, 500, 600, 700) according to one of the preceding examples, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the distance (d1) between the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120) increases towards an end (116) of the first RF electrode (110) and towards an end (126) of the second RF electrode (120). Example 11. The device (200A, 200B, 200C, 500) of Example 10, wherein the distance (d2) between the second side (114) of the first RF electrode (110) and the second side (124) of the second RF electrode (120) decreases towards the end (116) of the first RF electrode (110) and towards the end (126) of the second RF electrode (120). Example 12. The device (200A, 200B, 200C, 600, 700) of Example 10, wherein the distance (d2) between the second side (114) of the first RF electrode (110) and the second side (124) of the second RF electrode (120) increases towards the end (116) of the first RF electrode (110) and towards the end (126) of the second RF electrode (120). Example 13. The device (200A, 200B, 200C, 300) of Example 10, wherein the distance (d2) between the second side (114) of the first RF electrode (110) and the second side (124) of the second RF electrode (120) remains substantially constant toward the end (116) of the first RF electrode (110) and toward the end (126) of the second RF electrode (120). Example 14. The device (200A, 200B, 200C, 400, 500) according to any one of examples 1 to 9, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the distance (d2) between the second side (114) of the first RF electrode (110) and the second side (124) of the second RF electrode (120) decreases towards an end (116) of the first RF electrode (110) and towards an end (126) of the second RF electrode (120). Example 15. The device (200A, 200B, 200C, 500) of Example 14, wherein the distance (d1) between the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120) increases towards the end (116) of the first RF electrode (110) and towards the end (126) of the second RF electrode (120). Example 16. The device (200A, 200B, 200C, 400) of Example 14, wherein the distance (d1) between the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120) remains substantially constant toward the end (116) of the first RF electrode (110) and toward the end (126) of the second RF electrode (120). Example 17. Device (200A, 200B, 200C, 300, 500, 600, 700) according to one of the preceding examples, wherein in the central region (170) of the first RF electrode (110) and the second RF electrode (120), the first side (112) of the first RF electrode (110) and the second side (114) of the first RF electrode (110) have a third distance (d 3,c ) to each other and the first side (122) of the second RF electrode (120) and the second side (124) of the second RF electrode have a fourth distance (d 4,c ) to each other, wherein in the central region (170) the third distance (d 3,c) is essentially constant and the fourth distance (d 4,c ) is essentially constant. Example 18. Device (200A, 200B, 200C, 300, 500, 700) according to example 17, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the first side (112) of the first RF electrode (110) and the second side (114) of the first RF electrode (110) have a distance (d3) which is smaller than the third distance (d 3,c ) is. Example 19. Device (200A, 200B, 200C, 300, 500, 700) according to example 18, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the first side (122) of the second RF electrode (120) and the second side (124) of the second RF electrode (120) have a distance (d4) which is smaller than the fourth distance (d 4,c ) is. Example 20. The device (200A, 200B, 200C, 600) according to example 17, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the first side (112) of the first RF electrode (110) and the second side (114) of the first RF electrode (110) have a distance (d3) that is substantially equal to the third distance (d 3,c ), and the first side (122) of the second RF electrode (120) and the second side (124) of the second RF electrode (120) have a distance (d4) substantially equal to the fourth distance (d 4,c ) is. Example 21. The device (200A, 200B, 200C, 300, 400, 500, 700) according to any one of examples 1 to 19, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the first RF electrode (110) and the second RF electrode (120) each have a tapered shape. Example 22. The device (200A, 200B, 200C, 300, 500, 500, 700) according to any one of examples 1 to 19, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the first RF electrode (110) and the second RF electrode (120) are spaced further apart from each other compared to the central region (170). Example 23. Device (200A, 200B, 200C, 300, 500, 600, 700) according to one of the preceding examples, wherein the device is arranged to: Picking up one or more particles at the end region (180) of the first RF electrode (110) and the second RF electrode (120), and Capturing the one or more captured particles in the central region (170) of the first RF electrode (110) and the second RF electrode (120) using the plurality of DC electrodes (1301, ..., 130 n , 1401, ..., 140 n , 150). Example 24. The device (200A, 200B, 200C, 300, 500, 600, 700) of Example 23, wherein during the picking up of the one or more particles at the end region (180) of the first RF electrode (110) and the second RF electrode (120), an amplitude of an RF signal applied to the first RF electrode (110) and the second RF electrode (120) remains unchanged. Example 25. Device (200A, 200B, 200C, 300, 500, 600, 700) according to one of the preceding examples, wherein the device is arranged to: Accelerating one or more particles from the central region (170) toward the end region (180) so that the one or more particles leave the end region. Example 26. The device (200A, 200B, 200C, 300, 500, 600, 700) according to Example 25, wherein at least some of the plurality of DC electrodes (1301, ..., 130 n , 1401, ..., 140 n, 150) to accelerate the one or more particles. Example 27. The device (200A, 200B, 200C, 300, 500, 600, 700) of Example 26, wherein during acceleration of the one or more particles in the end region (180) of the first RF electrode (110) and the second RF electrode (120), an amplitude of an RF signal applied to the first RF electrode (110) and the second RF electrode (120) remains unchanged. Example 28. The device (200A, 200B, 200C, 300, 500, 600, 700) of example 1, wherein in the end region (180) one or more of the plurality of DC electrodes are arranged between the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120), wherein a width of the one or more of the plurality of DC electrodes is greater than the first distance (d 1,c ) is. Example 29. System (800) comprising: a first device (810; 100A, 100B, 100C, 200A, 200B, 200C, 300, 500, 600, 700) for capturing one or more particles; a second device (820; 100A, 100B, 100C, 200A, 200B, 200C, 300, 500, 600, 700) for capturing one or more particles; and wherein the first device is arranged to capture (910) at least one particle provided by a particle source (840), wherein the second device (820) is arranged to: Picking up (930) the at least one particle from the first device (810), and Performing (950) one or more quantum gate operations on the at least one particle. Example 30. A method (900) for providing one or more particles to a device (820) for capturing one or more particles, the method comprising: Capturing (910), by a first device, at least one particle provided by a particle source (840), Providing (920), by the first device, the at least one particle to a second device (820), Picking up (930), by the second device, the at least one particle, and Performing (950), by the second device, one or more quantum gate operations on the at least one particle.

[0076] Although specific examples have been illustrated and described herein, those skilled in the art will recognize that a variety of alternative and / or equivalent implementations may be substituted for the specific examples shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific examples discussed herein. Therefore, it is intended that this invention be limited only by the claims and their equivalents.

[0077] It should be noted that the methods and devices, including their preferred embodiments, as set forth in this document can be used alone or in combination with the other methods and devices disclosed in this document. Furthermore, the features set forth in the context of a device are also applicable to a corresponding method, and vice versa. Furthermore, all aspects of the methods and devices set forth in this document can be combined in any desired manner. In particular, the features of the claims can be combined with one another in any desired manner.

[0078] It should be noted that the description and drawings merely illustrate the principles of the proposed methods and systems. Those skilled in the art will be able to implement various arrangements that, although not expressly described or shown herein, embody the principles of the invention and are included within its spirit and scope. Furthermore, all examples and embodiments set forth in the present document are primarily intended to be expressly provided for illustrative purposes only to assist the reader in understanding the principles of the proposed methods and systems. Furthermore, all statements herein providing principles, aspects, and embodiments of the invention, as well as specific examples thereof, are intended to include equivalents thereof. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited non-patent literature

[0000] Felix Stopp et al (2021) arXiv:2108.06948v1

[0002] by Felix Stopp et al (2021) arXiv:2108.06948v1

[0039]

Claims

[1] A device (200A, 200B, 200C, 300, 400, 500, 600, 700) for capturing one or more particles, the device comprising: a first radio frequency (RF) electrode (110), a second RF electrode (120) and a plurality of direct current (DC) electrodes (1301, ..., 130n, 1401, ..., 140n, 150, 132, 142); wherein the first RF electrode (110) and the second RF electrode (120) extend in a first direction (x), wherein the first RF electrode (110) comprises a first side (112) and a second side (114), wherein the second side (114) of the first RF electrode (110) is arranged opposite the first side (112) of the first RF electrode (110), wherein the second RF electrode (120) comprises a first side (122) and a second side (124), wherein the second side (124) of the second RF electrode (120) is arranged opposite the first side (122) of the second RF electrode (120), wherein the first side (112) of the first RF electrode (110) faces the first side (122) of the second RF electrode (120), wherein in a central region (170) of the first RF electrode (110) and the second RF electrode (120), the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120) have a first distance (d 1,c ) to each other, wherein in the central region (170) of the first RF electrode (110) and the second RF electrode (120), the second side (112) of the first RF electrode (110) and the second side (122) of the second RF electrode (120) have a second distance (d 2,c ) to each other, and wherein in an end region (180) of the first RF electrode (110) and the second RF electrode (120), one or both of the following features are present: the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120) have a distance (d1) that is greater than the first distance (d 1,c ), and the second side (114) of the first RF electrode (110) and the second side (124) of the second RF electrode (120) have a distance (d2) which is smaller than the second distance (d 2,c ) is. [2] The device (200A, 200B, 300, 400, 500, 600, 700) of claim 1, wherein the first RF electrode (110) and the second RF electrode (120) are arranged on a first substrate (160) such that the first RF electrode and the second RF electrode are arranged within a common plane. [3] The device (200C, 300, 400, 500, 600, 700) of claim 1, wherein the first RF electrode (110) is disposed on a first substrate (160) and the second RF electrode (120) is disposed on a second substrate (162) such that the first RF electrode and the second RF electrode are disposed in two separate planes. [4] Device (200A, 200B, 200C, 300, 400, 500, 600, 700) according to one of the preceding claims, wherein in the central region (170) of the first RF electrode (110) and the second RF electrode (120) the first distance (d1, c ) between the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120) is substantially constant. [5] Device (200A, 200B, 200C, 300, 400, 500, 600, 700) according to one of the preceding claims, wherein in the central region (170) of the first RF electrode (110) and the second RF electrode (120), the second distance (d 2,c) between the second side (114) of the first RF electrode (110) and the second side (124) of the second RF electrode (120) is substantially constant. [6] Device (200A, 200B, 200C, 300, 400, 500, 600, 700) according to one of the preceding claims, wherein the distance (d1), the distance (d2), the first distance (d1, c ) and the second distance (d 2,c ) in a direction orthogonal to the first direction (x). [7] Device (200A, 200B, 200C, 300, 400, 500, 600, 700) according to one of the preceding claims, wherein the plurality of DC electrodes (1301, ..., 130 n , 1401, ..., 140 n , 150) is arranged adjacent to the first RF electrode (110) and the second RF electrode (120) in the central region (170) of the first RF electrode (110) and the second RF electrode (120). [8] Device (200A, 200B, 200C, 300, 400, 500, 600, 700) according to claim 7, wherein a first set (1301, ..., 130n ) of the plurality of DC electrodes (1301, ..., 130 n , 1401, ..., 140 n , 150) is arranged adjacent to the second side (114) of the first RF electrode (110), and wherein a second set (1401, ..., 140 n ) of the plurality of DC electrodes (1301, ..., 130 n , 1401, ..., 140 n , 150) is arranged adjacent to the second side (124) of the second RF electrode (120). [9] Device (200A, 200B, 200C, 300, 400, 500, 600, 700) according to claim 8, wherein at least one further DC electrode (150) of the plurality of DC electrodes (1301, ..., 130 n , 1401, ..., 140 n , 150) is arranged between the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120). [10] Device (200A, 200B, 200C, 300, 500, 600, 700) according to one of the preceding claims, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the distance (d1) between the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120) increases towards an end (116) of the first RF electrode (110) and towards an end (126) of the second RF electrode (120). [11] The device (200A, 200B, 200C, 500) of claim 10, wherein the distance (d2) between the second side (114) of the first RF electrode (110) and the second side (124) of the second RF electrode (120) decreases toward the end (116) of the first RF electrode (110) and toward the end (126) of the second RF electrode (120). [12] The device (200A, 200B, 200C, 600, 700) of claim 10, wherein the distance (d2) between the second side (114) of the first RF electrode (110) and the second side (124) of the second RF electrode (120) increases toward the end (116) of the first RF electrode (110) and toward the end (126) of the second RF electrode (120). [13] The device (200A, 200B, 200C, 300) of claim 10, wherein the distance (d2) between the second side (114) of the first RF electrode (110) and the second side (124) of the second RF electrode (120) remains substantially constant toward the end (116) of the first RF electrode (110) and toward the end (126) of the second RF electrode (120). [14] Device (200A, 200B, 200C, 400, 500) according to one of claims 1 to 9, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the distance (d2) between the second side (114) of the first RF electrode (110) and the second side (124) of the second RF electrode (120) decreases towards an end (116) of the first RF electrode (110) and towards an end (126) of the second RF electrode (120). [15] The device (200A, 200B, 200C, 500) of claim 14, wherein the distance (d1) between the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120) increases toward the end (116) of the first RF electrode (110) and toward the end (126) of the second RF electrode (120). [16] The device (200A, 200B, 200C, 400) of claim 14, wherein the distance (d1) between the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120) remains substantially constant toward the end (116) of the first RF electrode (110) and toward the end (126) of the second RF electrode (120). [17] Device (200A, 200B, 200C, 300, 500, 600, 700) according to one of the preceding claims, wherein in the central region (170) of the first RF electrode (110) and the second RF electrode (120), the first side (112) of the first RF electrode (110) and the second side (114) of the first RF electrode (110) have a third distance (d 3,c ) to each other and the first side (122) of the second RF electrode (120) and the second side (124) of the second RF electrode have a fourth distance (d 4,c ) to each other, wherein in the central region (170) the third distance (d 3,c) is essentially constant and the fourth distance (d 4,c ) is essentially constant. [18] Device (200A, 200B, 200C, 300, 500, 700) according to claim 17, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the first side (112) of the first RF electrode (110) and the second side (114) of the first RF electrode (110) have a distance (d3) which is smaller than the third distance (d 3,c ) is. [19] Device (200A, 200B, 200C, 300, 500, 700) according to claim 18, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the first side (122) of the second RF electrode (120) and the second side (124) of the second RF electrode (120) have a distance (d4) which is smaller than the fourth distance (d 4,c ) is. [20] Device (200A, 200B, 200C, 600) according to claim 17, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the first side (112) of the first RF electrode (110) and the second side (114) of the first RF electrode (110) have a distance (d3) which is substantially equal to the third distance (d 3,c ), and the first side (122) of the second RF electrode (120) and the second side (124) of the second RF electrode (120) have a distance (d4) substantially equal to the fourth distance (d 4,c ) is. [21] The device (200A, 200B, 200C, 300, 400, 500, 700) according to any one of claims 1 to 19, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the first RF electrode (110) and the second RF electrode (120) each have a tapered shape. [22] Device (200A, 200B, 200C, 300, 500, 500, 700) according to one of claims 1 to 19, wherein in the end region (180) of the first RF electrode (110) and the second RF electrode (120), the first RF electrode (110) and the second RF electrode (120) are further spaced from each other compared to the central region (170). [23] Device (200A, 200B, 200C, 300, 500, 600, 700) according to one of the preceding claims, wherein the device is arranged to: Picking up one or more particles at the end region (180) of the first RF electrode (110) and the second RF electrode (120), and Capturing the one or more captured particles in the central region (170) of the first RF electrode (110) and the second RF electrode (120) using the plurality of DC electrodes (1301, ..., 130 n , 1401, ..., 140n, 150). [24] The device (200A, 200B, 200C, 300, 500, 600, 700) of claim 23, wherein during the picking up of the one or more particles at the end region (180) of the first RF electrode (110) and the second RF electrode (120), an amplitude of an RF signal applied to the first RF electrode (110) and the second RF electrode (120) remains unchanged. [25] Device (200A, 200B, 200C, 300, 500, 600, 700) according to one of the preceding claims, wherein the device is arranged to: Accelerating one or more particles from the central region (170) toward the end region (180) so that the one or more particles leave the end region. [26] The device (200A, 200B, 200C, 300, 500, 600, 700) according to claim 25, wherein at least some of the plurality of DC electrodes (1301, ..., 130 n , 1401, ..., 140 n , 150) to accelerate the one or more particles. [27] The device (200A, 200B, 200C, 300, 500, 600, 700) of claim 26, wherein during the acceleration of the one or more particles in the end region (180) of the first RF electrode (110) and the second RF electrode (120), an amplitude of an RF signal applied to the first RF electrode (110) and the second RF electrode (120) remains unchanged. [28] Device (200A, 200B, 200C, 300, 500, 600, 700) according to claim 1, wherein in the end region (180) one or more of the plurality of DC electrodes are arranged between the first side (112) of the first RF electrode (110) and the first side (122) of the second RF electrode (120), wherein a width of the one or more of the plurality of DC electrodes is greater than the first distance (d1, c ) is. [29] System (800), comprising: a first device (810; 100A, 100B, 100C, 200A, 200B, 200C, 300, 500, 600, 700) for capturing one or more particles; a second device (820; 100A, 100B, 100C, 200A, 200B, 200C, 300, 500, 600, 700) for capturing one or more particles; and wherein the first device is arranged to capture (910) at least one particle provided by a particle source (840), wherein the second device (820) is arranged to: Picking up (930) the at least one particle from the first device (810), and Performing (950) one or more quantum gate operations on the at least one particle. [30] A method (900) for providing one or more particles to a device (820) for capturing one or more particles, the method comprising: Capturing (910), by a first device, at least one particle provided by a particle source (840), Providing (920), by the first device, the at least one particle to a second device (820), Picking up (930), by the second device, the at least one particle, and Performing (950), by the second device, one or more quantum gate operations on the at least one particle.

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