Carrier material with magnetic field-modulating particles for adjustable sensitivity of optical NV sensor elements

Abstract

The invention relates to a first carrier material for an optical sensor element (NV) configured to selectively influence the magnetic flux density at the sensor element. For this purpose, the first carrier material contains magnetic flux density (B(t))-modifying particles embedded in a matrix material. The particles are arranged, constructed, and / or manufactured such that they alter the sensitivity of the sensor element (NV), but leave at least one optical access window open for optically controlling and optically reading the sensor element (NV).The sensitivity of the sensor element (NV) with respect to the intensity (Ifl(t)) of the fluorescence radiation (FL) emitted by the paramagnetic centers of the sensor element (NV) compared to the value of the magnetic flux density (B(t)) at the respective location of the paramagnetic centers can be specifically adjusted by means of the first support material by means of design and / or manufacturing and / or dimensioning and / or shaping and / or arrangement.

Description

Field of invention

[0001] The claimed invention relates to a first carrier material for an optical sensor element (NV). This first carrier material contains particles that modify the magnetic flux density (B(t)) and are embedded in a matrix material. The particles modifying the magnetic flux density (B(t)) are arranged, constructed, and / or manufactured such that they alter the sensitivity of the sensor element (NV). The particles modifying the magnetic flux density (B(t)) leave at least one optical access window for optically driving and optically reading the sensor element (NV).The invention is characterized in that the sensitivity of the sensor element (NV) with respect to the intensity (Ifl(t)) of the fluorescence radiation (FL) emitted by the paramagnetic centers of the sensor element (NV) compared to the value of the magnetic flux density (B(t)) at the respective location of the paramagnetic centers can be selectively adjusted by means of the design and / or manufacture and / or dimensioning and / or shaping and / or arrangement of the first support material. State of the art

[0002] From DE 10 2020 129 367 A1, a system is known in which the evaluation electronics of a similar system are positioned directly on the stator. During the development of the proposal presented in this document, it was recognized that the technical teaching of DE 10 2020 129 367 A1 is susceptible to EMC interference and causes problems with galvanic isolation and temperature stress. The proposal presented here solves these problems.

[0003] The state of the art is determined based on the Fig. 1 explained for a non-axial motor. Figure 1

[0004] Fig. Figure 1 shows, in a simplified schematic and exemplary manner, a prior art system for a non-axial motor. This document refers in particular to document WO 2024 041 703 A1. Reading documents WO 2024 041 703 A1 and DE 10 2022 005 094 A1 is assumed. The non-axial motor of Fig. 1 includes the stator housing GH. The stator housing GH has in the Fig. 1. The magnetic stator circuit is attached. The magnetic stator circuit can, for example, include a ferrite body. The non-axial motor of the Fig. 1 further includes the stator coil windings SL. The non-axial motor of the Fig.Section 1 further comprises the axis AX, which the stator preferably rotatably mounts. Preferably, the axis AX is rotatably mounted in the stator about its longitudinal axis. Preferably, the axis AX is secured against displacement along its longitudinal axis. A rotor housing GHR is preferably attached to the axis AX. A magnetic rotor circuit RMK is preferably attached to the rotor housing and / or the axis AX. Preferably, the magnetic rotor circuit RMK comprises a ferromagnetic laminated core or the like. Several permanent magnets PM are typically attached to the magnetic rotor circuit RMK and / or to the rotor housing GHR. An air gap LS is typically located between the stator coils SL and the permanent magnets PM.

[0005] A half-bridge controller uses half-bridge control lines (HSL) to control several half-bridges (HB). The half-bridges (HB) supply current to the motor phases (MPH). U , MPH V , MPH W) which are connected to the stator coils SL. In the example of the Fig. In Figure 1, the exemplary motor is three-phase. This exemplary motor preferably comprises N*3 stator coils, where N is a positive integer greater than 0. The half-bridges HB commutate the control of the stator coils as a function of the half-bridge control lines HSL using the motor phases MPH. U , MPH V , MPH W ).

[0006] The generator G generates in the Fig. 1. The transmit pre-signal. Preferably, the transmit pre-signal is pulse-modulated with a pulse frequency. Particularly preferably, it is a square wave signal with a duty cycle of preferably 50%. Other duty cycles are conceivable. The offset addition OFF1 adds in the Fig.1 preferably has an offset to the value of the transmit pre-signal in order to utilize the pump radiation source PL. Preferably, the resulting transmit signal S5 has no negative signal components. The pump radiation source PL generates a modulated pump radiation LB depending on the transmit signal S5. In the example of the Fig.1. The pump radiation source transmits the pump radiation LB through a dichroic mirror F1 and injects the pump radiation into the optical fiber LWL. The motor housing has at least one opening OF through which the optical fiber LWL enters the housing GH. The sensor element NV is located at the end of the optical fiber LWL. In the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the sensor element NV preferably comprises a plurality of nanodiamonds, which preferably have a statistically uniformly distributed different crystal orientation and are embedded in a matrix material. Typically, the matrix material (also referred to as the carrier material in the referenced literature) mechanically connects these nanodiamonds to the end of the optical fiber LWL. Preferably, the actual optical fiber LWL has a diameter of approximately 100 µm. A strain relief for the optical fiber LWL is also typically included.The pump radiation LB strikes the nanodiamonds in the sensor element NV. Preferably, the sensor element NV comprises crystals with paramagnetic centers whose intensity profile I. fl (t) their fluorescence radiation FL from the magnetic flux density B(t) at the location of the paramagnetic centers and from the intensity profile I pmp(t) of the pump radiation LB depends. Preferably, the sensor element NV comprises diamonds as crystals. Preferably, the sensor element NV comprises diamonds with NV centers. Other paramagnetic centers in diamond, such as the ST1 center, the TR1 center, the TR12 center, the PbV center, the SiV center, and other paramagnetic centers, are known from the literature. The choice of crystals and paramagnetic centers is typically application-dependent. Typically, NV centers are particularly suitable. Typically, the pump radiation LB excites the crystals, i.e., typically the nanodiamonds, to emit fluorescence FL. Preferably, the sensor element NV is located at the end of the optical fiber LWL. Preferably, the sensor element NV has the Fig. 1 a diameter D LWLL , which is smaller than the diameter D LWLof the optical fiber LWL. Typically, the NV centers of the sensor element NV emit fluorescence radiation FL back into the optical fiber LWL. The fluorescence radiation FL exits the optical fiber LWL at the other end and, deflected by the dichroic mirror F1, illuminates the photodetector PD. The dichroic mirror F1 does not deflect the scattered pump radiation LB towards the photodetector PD. As a result, the photodetector PD essentially receives only fluorescence radiation FL. The photodetector PD preferentially converts the intensity I fl (t) of the fluorescence radiation FL into a time-dependent value profile of a received signal S0. An amplifier V1 amplifies and, if necessary, filters the receiver output signal S0 to produce the amplified receiver output signal S1. In the example of the Fig.In step 1, a multiplier M1 multiplies the amplified receiver output signal S1 by the transmit pre-signal S1 to produce the filter input signal S3. A low-pass filter TB typically removes the frequency components with added frequency from the spectrum. The low-pass filter TP thus filters the filter input signal S3 to produce the flux density measurement signal S4. The half-bridge controller HBSTR controls the commutation of the motor using the half-bridges HB as a function of the flux density measurement signal S4. The special feature of the measurement method of Fig. 1 is that the optical fiber LWL together with the sensor element typically does not include any ferromagnetic or electrically conductive materials and thus the magnetic field B ext (t) of the engine is essentially unaffected.

[0007] For example, the HBSTR half-bridge controller can detect a zero crossing of the magnetic flux density B. ext(t) in the air gap ag or the magnetic flux density of the stray field of the air gap ag.

[0008] The intensity I fl The fluorescence radiation FL of the crystals or diamonds of the sensor element NV depends on the magnetic flux density B(t) at the location of the NV centers or paramagnetic centers of the sensor element NV. Since the value of the flux density measurement signal S4 indicates how much of the transmitted pre-signal S5w is contained in the amplified receiver output signal S1, this signal is a measure of the intensity I. fl(t) of the fluorescence radiation FL. Thus, the flux density measurement signal S4 is a measure of the magnetic flux density B(t) at the location of the NV centers or paramagnetic centers in the sensor element NV. The half-bridge controller HBSTR evaluates the zero crossing of the AC component of the flux density measurement signal S4 and preferably controls the commutation of the motor by means of the half-bridges HB based on this.Instead of using an L2 product as described here, other methods, in particular computer- and / or machine-implemented methods, can also be used to determine values ​​of the flux density measurement signal S4 by means of correlation and / or other functionally equivalent methods, in particular computer- and / or machine-implemented methods and / or in particular computer- and / or machine-implemented algorithms, from the receiver output signal S0 and / or from the amplified receiver output signal S1 and / or from a signal derived from these on the one hand, and in particular by means of correlation with the transmit pre-signal S5w and / or the transmit pre-signal S5 and / or a signal derived therefrom on the other hand.Therefore, depending on the flux density measurement signal S4 obtained in this way, which may also include a sequence of measured values, or depending on a signal derived therefrom or on one or more values ​​derived therefrom, the commutation of the current supply to the stator coils of the motor can then be carried out by means of the half-bridges HB.

[0009] In the example of the Fig.The sensor element NV is located in the stray field BSTR of the motor's air gap ag. An additional position sensor POS provides a further position signal via a marker MRK on the motor's rotor. The magnetic stator circuit SMK is attached to the housing GH. An exemplary ceramic mechanical housing MH protects the common optical fiber LWL. A filler FM seals the opening OF in the motor. An external data bus EXTDB enables the half-bridge controller HBSTR to communicate with a higher-level control system. The external data bus EXTDB can be a wired or wireless data connection. Multiple parallel data connections, which can be implemented differently, are conceivable.

[0010] Further description of the relevant technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1

[0011] WO 2024 041 703 A1 and DE 10 2022 005 094 A1 each propose a device for detecting the magnetic flux density B in the air gap ag and / or in the stray field BSTR of the air gap ag of a motor. The motor described in these documents has a housing (GHR, GH). Furthermore, the motor described in these documents has a sensor element NV with a second support material TM. Preferably, a plurality of diamonds DM are embedded in the second support material TM. According to these documents, the second support material TM preferably comprises glass and / or a cured plastic. According to these documents, the support material fixes the diamonds DM and prevents their repositioning. Preferably, according to the technical teaching described in these documents, the support material is transparent after solidification in the manufacturing process to the pump wavelength of the pump radiation LB and to the fluorescence radiation FL of the NV centers in the diamonds DM.One, more, or all of the diamonds DM of these diamonds DM typically have NV centers NVZ. The motor according to WO 2024 041 703 A1 and DE 10 2022 005 094 A1 preferably comprises a rotor and a stator. According to these documents, an air gap LS separates the rotor from the stator. According to these documents, the rotor is rotatably mounted about an axis AX relative to the stator. The magnetic flux density B in the air gap LS and / or in the stray field BSTR of the air gap LS of the motor acts on the NV centers NVZ, according to these documents. Typically, according to these documents, the magnetic flux density B causes a reduction in the intensity of the fluorescence radiation FL. According to these documents, the housing GH preferably has a first opening OF for the ingress of pump radiation LB from a pump radiation source PL to the sensor element NV. According to these documents, the pump radiation LB preferably has a pump radiation wavelength (λ). pmp) in a wavelength range of 400 nm to 700 nm and / or better, 450 nm to 650 nm and / or better, 500 nm to 550 nm and / or better, 515 nm to 540 nm. According to these documents, a wavelength of 532 nm is preferred as the pump radiation wavelength λ. pmp In the case of NV centers in diamond or in diamonds, according to these documents, a laser diode from Osram, type PLT5 520B, for example, is used as a pump radiation source PL1 with a pump radiation wavelength of 520 nm λ. pmp suitable. The NV centers NVZ of the sensor element NV typically emit, when irradiated with pump radiation LB of the pump radiation wavelength λ described above. pmp a fluorescence radiation FL with a typical fluorescence wavelength λ flof approximately 637 nm at NV centers. According to these documents, other wavelengths can be achieved by plasmonic coupling with metallic nanocrystals in the support material TM. The optical properties of the NV centers can be modified by combining the nanodiamonds DM in the support material TM with metallic nanoparticles. According to these documents, the housing GH preferably has a second opening OF for the emission of fluorescence radiation FL from the sensor element NV to a photodetector PD. The device according to WO 2024 041 703 A1 and DE 10 2022 005 094 A1 further comprises a sub-device, in particular a dichroic mirror F1, to separate the fluorescence radiation FL from the pump radiation LB, so that essentially only fluorescence radiation FL and as little pump radiation LB as possible is incident on the photodetector PD.According to these documents, this sub-device in the form of an F1 filter or dichroic mirror allows the passage of radiation with the fluorescence wavelength λ. fl the fluorescence radiation FL - e.g. 637 nm in NV centers with a phonon sideband from 637 nm to 850 nm - passes in the direction of the photodetector PD, while the radiation with the pump radiation wavelength λ pmp The pump radiation LB from the pump radiation source PL, and thus the modulated pump radiation LB, does not pass through or is directed in such a way that it does not reach or influence the photodetector PD. According to these documents, the photodetector (PD) converts the intensity signal of the fluorescence radiation FL into a receiver output signal S0. The device evaluates the receiver output signal S0 to obtain information about the position of the magnetic field B in the motor, or information that includes this information about the position of the magnetic field B in the motor.

[0012] According to these documents, the device described in WO 2024 041 703 A1 and DE 10 2022 005 094 A1 has the advantage that the motor's magnetic field is not disturbed by connecting cables, such as those used in magnetic field measurements with Hall sensors. Furthermore, the sensor element is completely diamagnetic, according to these documents. Due to galvanic isolation, feedback from the motor fields to the evaluation electronics of the sensor system via the sensor element and the optical fiber is highly unlikely, according to these documents. Therefore, the system can also be used in high-voltage systems with motors driven by very high voltages, according to these documents. The system is also suitable for generators in power plants, according to these documents. Systems from the prior art do not exhibit this capability.

[0013] In a first variant of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the NV centers NVZ of the sensor element NV are preferably located not only in the stray field of the air gap, but also in the air gap LS of the motor itself. This enables a better signal and more precise measured values ​​with less interference.

[0014] In a second variant of the technical teaching described in WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the diamonds DM in the carrier material TM are oriented substantially differently from one another. This offers the manufacturing advantage that alignment of the diamonds DM is no longer necessary, and the manufacturing process for producing the sensor element can, for example, use diamond powder containing a very large number of very small diamonds DM. A sensor element with such a disordered multitude of diamonds DM has the advantage that the measurement of the magnetic flux density is isotropic. This means that the sensor element only detects the magnitude of the magnetic flux density, not its direction. This eliminates the need for alignment of the sensor element and the optical fiber in the motor.The assembly of such a sensor element can be carried out by auxiliary personnel or less precise machine devices, which simply need to insert the sensor element with the optical fiber into a designated opening OF on the motor. This drastically reduces the manufacturing costs for such a motor. To achieve spatial isotropy, it is therefore advantageous if the orientation of the diamonds (DM) is stochastically essentially uniformly distributed.

[0015] According to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, it is also advantageous, in accordance with the preceding explanations, if the sensor element (NV) is located in the air gap (LS) or in the stray field (BSTR) of the air gap (LS).

[0016] To minimize the number of optical fibers (OF) and keep modifications to the motor to a minimum, it is advantageous to use a single optical fiber (OF) for supplying the pump radiation (LB) from the pump radiation source (PL) to the sensor element and for returning the fluorescence radiation from the sensor element to the photodetector (PD). In this case, only a single opening (OF) is necessary for mounting the optical fiber (OF), so the first opening (OF) and the second opening (OF) are identical. The following text refers to such an opening (OF) as a common opening (OF). The following text will also describe the use of two optical fibers per sensor element and the use of the sensor element in transmitted light and / or reflected light configurations as possible variations.

[0017] Thus, the motor of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 comprises a sensor element with a plurality of diamonds with NV centers NVZ in a carrier material TM and a first optical fiber LWL to which the sensor element is attached, wherein the optical fiber LWL transports the pump radiation LB of the pump radiation source PL to the sensor element NV, so that the pump radiation LB irradiates the sensor element NV and the NV centers NVZ emit fluorescence radiation FL, which the optical fiber LWL detects and transports back towards the photodetector PD.

[0018] The optical fiber LWL of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 can be inserted parallel to the axis AX of the motor, with the sensor element then preferably located in the stray field of the air gap LS. However, the optical fiber of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 can also be inserted perpendicular to the axis of rotation AX by means of a bore into the laminated core of the stator between the slots in which the bars of the stator coils SL are inserted and advanced to the air gap, so that the sensor element then detects the magnetic flux density B in a stator coil SL.The sensor element of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 can also be advanced into the air gap, but then the problem arises that the probability of damage during operation of the motor increases due to movement or vibration of moving components of the motor or different coefficients of thermal expansion.

[0019] If the return of the fluorescence radiation FL from the sensor element to the photodetector PD is to be carried out separately from the supply of the pump radiation LB to the sensor element, in accordance with the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the motor preferably comprises a second optical fiber LWL, which detects fluorescence radiation FL from the sensor element NV and transports the fluorescence radiation FL in the direction of the photodetector PD.

[0020] As explained above, according to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the first optical fiber is preferably identical to the second optical fiber. The documents of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 therefore refer to such an optical fiber as a common optical fiber. Such a common optical fiber, as described in WO 2024 041 703 A1 and DE 10 2022 005 094 A1, saves calibration effort, reduces assembly complexity, and saves material, thus offering advantages. In particular, it reduces the necessary modifications to the motor itself.

[0021] The first optical fiber (OLF) of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 has a first end and a second end. The second optical fiber (OLF) of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 also has a first end and a second end. The common optical fiber (OLF) of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 likewise has a first end and a second end. The technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 now proposes to attach the sensor element NV to the first end of the first optical fiber LWL and / or second optical fiber LWL or the common optical fiber LWL in order to stabilize the optical coupling between optical fiber LWL and sensor element NV.

[0022] If the first end of the first and / or second or common optical fiber LWL is enclosed by the carrier material TM of the sensor element NV, a particularly good stabilization of this optical coupling results according to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1.

[0023] According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, preferably an end surface EF of the first end of the first and / or second or common optical fiber LWL forms a flat end surface EF perpendicular to the center line ML of the optical fiber LWL. According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the center line ML typically corresponds to the optical axis of the optical fiber. According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, such a flat end surface EF enables improved extraction of the electromagnetic pump radiation LB from the optical fiber LWL and improved optical coupling of the fluorescence radiation FL into the optical fiber LWL.According to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the distance of one or preferably several diamonds DM from this flat end surface EF is preferably smaller than the pump radiation wavelength λ. pmp and / or preferably smaller than ½ the pump radiation wavelength λ pmp , and / or preferably smaller than 1 / 4 of the pump radiation wavelength λ pmp , and / or preferably smaller than 1 / 8 of the pump radiation wavelength λ pmp , and / or preferably smaller than 1 / 10 of the pump radiation wavelength λ pmp , and / or preferably smaller than 1 / 20 of the pump radiation wavelength λ pmp , and / or preferably smaller than 1 / 50 of the pump radiation wavelength λ pmp , and / or preferably smaller than 1 / 100 of the pump radiation wavelength λ pmp , , and / or preferably smaller than 1 / 200 of the pump radiation wavelength λ pmp , and / or preferably smaller than 1 / 500 of the pump radiation wavelength λ pmp, and / or preferably smaller than 1 / 1000 of the pump radiation wavelength λ pmp .

[0024] According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the center line ML, which is an imaginary auxiliary construction to clarify the situation, pierces the end surface EF at a midpoint MP of the end surface EF. The thickness d I According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the thickness of the carrier material TM is preferably greater at this center point MP than the thickness d. r at other points on the end surface EF of the first end of the first and / or second or common optical fiber LWL. According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, this has the advantage that light is reflected back through the interface between the carrier material TM and the air into the optical fiber, thus increasing efficiency.

[0025] According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the carrier material TM preferably forms a lens LWLL at the first end ELWL1 of the optical fiber LWL. The diameter D LWLL According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the lens LWLL is typically smaller than the diameter D. LWL of the optical fiber (OF). The diameter D LWLL According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the lens LWLL can also be as large as the diameter D. LWL of the optical fiber LWL, which, however, is not optimal according to the experience gained in developing the technical teaching of this document.

[0026] Preferably, according to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the first optical fiber (OF) is wholly or partially enclosed by a mechanical enclosure (MH) in the area of ​​the motor and / or within the motor. Preferably, according to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the second optical fiber (OF) is also wholly or partially enclosed by a mechanical enclosure (MH) in the area of ​​the motor and / or within the motor. Preferably, according to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the common optical fiber (OF) is wholly or partially enclosed by a mechanical enclosure (MH) in the same manner in the area of ​​the motor and / or within the motor. According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the mechanical casing MH supports and protects the respective optical fiber LWL against the harsh conditions inside the motor.The mechanical casing within the motor must meet special requirements regarding thermal and chemical stability against heat and operating fluids. According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the mechanical casing MH is therefore preferably made of glass, ceramic, or the like.

[0027] According to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the mechanical shell MH therefore preferably comprises a ceramic material or another non-magnetizable and / or electrically non-conductive material and / or a material stable at temperatures above 100°C and / or a material stable at temperatures above 140°C and / or a material stable at temperatures above 170°C and / or a material stable at temperatures above 200°C and / or a material stable at temperatures above 250°C, or includes or consists of these materials in the extreme case.According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the mechanical casing (MH) can therefore be made of a ceramic material or of another non-magnetizable and / or electrically non-conductive material and / or of a material stable at temperatures above 100°C and / or of a material stable at temperatures above 140°C and / or of a material stable at temperatures above 170°C and / or of a material stable at temperatures above 200°C and / or of a material stable at temperatures above 250°C.

[0028] According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the mechanical sheath (MH) is preferably, at least in sections, a tube, a capillary, or a cannula into which the respective optical fiber (OF) is inserted. According to these technical teachings, this simplifies the manufacturing of the system consisting of the optical fiber, sensor element, and mechanical sheath (MH). The inner diameter D ro The diameter of such a tube or such a small tube or such a capillary or such a cannula is preferably only slightly larger than the diameter of the optical fiber lens LWLL and the diameter DLWL of the optical fiber LWL.

[0029] To minimize the ingress of ambient light to the sensor element during operation, it is advantageous, according to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, if the first gap between the edge of the first opening OF and the first optical fiber LWL is completely or partially sealed with an optically opaque filler FM. For the same reason, according to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, if the second gap between the edge of the second opening OF and the second optical fiber LWL is completely or partially sealed with an optically opaque filler FM, and / or if the common gap between the edge of the common opening OF and the common optical fiber LWL is completely or partially sealed with an optically essentially non-transparent filler FM.The common filling compound FM can attach the respective optical fiber to the motor according to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1.

[0030] According to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the device is preferably configured to determine the time-dependent intensity profile of the fluorescence radiation FL, particularly in the form of a receiver output signal S0. Furthermore, according to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the device is preferably configured to determine the time-dependent amplitude profile of the intensity of the fluorescence radiation FL from the intensity profile of the fluorescence radiation FL, particularly from the receiver output signal S0, and especially by means of a lock-in amplifier LIV or a functionally equivalent sub-device.Finally, the device of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 is preferably configured according to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 to control, depending on the determined time course of the amplitude value of the time course of the intensity of the fluorescence radiation FL, the electrical current of coils of the motor, in particular of stator coils SL of the motor and / or the electrical current of rotor coils of the motor and in particular by means of a half-bridge control HBSTR, here in the form of the control and evaluation device CTR, in conjunction with one or more half-bridges (HB1, HB2, HB2). According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, this makes it possible to operate without the magnetic field of the motor being interrupted by cables, etc.to modify and to detect the magnetic field in the motor and control the motor without problems with galvanic isolation.

[0031] According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the motor typically has n motor phases (MPH). U , MPH V , MPH W ) with n as a positive integer greater than 2. In the examples in the figures, the exemplary motor has n=3 motor phases. According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the device energizes each of these motor phases (MPH) by means of half-bridges HB. U , MPH V , MPH W ) with a corresponding motor phase current (I) MPHU , I MPHV , I MPHWTypically, according to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the half-bridge control HBSTR, here in the form of a control and evaluation device CTR, modulates one or more half-bridges (HB1, HB2, HB3) with a respective pulse-modulated control signal, which it generates individually for each motor phase. These motor phase currents (I MPHU , I MPHV , I MPHW ) are typically periodic at least over time with a period T. According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, it is preferred that each of the motor phase currents (I MPHU , I MPHV , I MPHW ) a current angle (φ MPHU , φ MPHV , φ MPHW ). assigned. According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the motor phase currents can always be expressed as a sequence of motor phase currents (I MPHU , I MPHV , I MPHW) can be arranged such that a preceding motor phase current differs in its respective current angle from the current angle of the subsequent motor phase current by 2π / n. Thus, according to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, each motor phase current is then assigned a motor phase current vector whose orientation corresponds to the current angle of the motor phase current and whose length corresponds to the magnitude of the motor phase current.

[0032] Preferably, the device of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 is configured, in particular by means of a high-pass filter or a functionally equivalent filter, to determine an alternating component of the temporal profile of the amplitude value of the intensity of the fluorescence radiation FL from the temporal profile of the intensity of the fluorescence radiation FL. According to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, only this alternating component, and in particular its zero crossings, enables the control of the commutation based on the intensity of the fluorescence radiation of the sensor element with the V-centers NVZ.

[0033] Preferably, the device of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 is configured to determine, in particular by means of a second low-pass filter (TP2), a low-frequency DC component in the temporal course of the amplitude value of the intensity of the fluorescence radiation (FL). According to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, this DC component can be used by the device to monitor the sensor element NV and the optical path and to detect deviations from expected values. For this purpose, according to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the device compares the value of the DC component with an expected value interval. If the value of the DC component lies outside the expected value interval, the device preferably concludes that there is a fault and triggers appropriate measures.According to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, such a measure can, for example, be that the half-bridge control HBSTR, here in the form of the control and evaluation device CTR, transmits a signal to a higher-level computer system via an external data bus EXTDB, which then initiates everything else.

[0034] According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the half-bridge controller HBSTR, here in the form of the control and evaluation device CTR, preferably comprises a computer core with non-volatile memory, a typically volatile read / write memory, a reset circuit, a clock generator with a clock system for supplying the half-bridge controller with an operating clock, a data bus interface to an external data bus EXTDB, an interface for controlling the half-bridges, an internal data bus for data communication between these components, and a power supply, as well as optionally other common processor components. According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the power supply preferably also supplies the other device components with electrical energy from a positive and a negative supply voltage line.Preferably, the power supply also provides the reference potential line GND.

[0035] Preferably, the device of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 is configured to separate this low-frequency DC component in the temporal course of the amplitude value of the temporal value course of the intensity of the fluorescence radiation FL from the temporal course of the amplitude value of the temporal value course of the intensity of the fluorescence radiation FL and thus to determine the AC component of the temporal course of the amplitude value of the temporal value course of the intensity of the fluorescence radiation FL. In this way, the device provides a signal according to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, which is suitable for controlling the commutation of the half-bridges.

[0036] The device described in WO 2024 041 703 A1 and DE 10 2022 005 094 A1 is preferably configured to determine a zero crossing of the alternating component of the time course of the amplitude value of the intensity of the fluorescence radiation FL. According to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the detection of the zero crossing has the advantage that fluctuations in the amplitude of the signal, etc., are irrelevant for the zero crossing.

[0037] Furthermore, the device of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 is preferably configured, according to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, to carry out, in temporal relation to the determined zero crossing of the alternating component of the time course of the amplitude value of the time course of the intensity of the fluorescence radiation FL, a commutation of the electrical current of the coils of the motor, in particular of stator coils SL of the motor and / or the electrical current of rotor coils of the motor, and in particular by means of a half-bridge control HBSTR, here in the form of the control and evaluation device CTR, in conjunction with half-bridges HB.

[0038] Finally, according to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the device of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 is designed to measure one or more voltage values ​​of one or more motor phase voltages (V MPHU , V MPHV , V MPHW ) one or more motor phases (MPH) U , MPH V , MPH W ) of the motor phases MPH against one or more motor phases different from this motor phase (MPH) U , MPH V , MPH W ) of the motor phases MPH and / or against a reference potential GND, and / or one or more current values ​​of one or more motor phase currents (I MPHU , I MPHV , I MPHW ) one or more motor phases (MPH) U , MPH V , MPH W ) to determine the MPH of the motor phases and / or one or more sum current values ​​of one or more sum currents of several motor phase currents (IMPHU , I MPHV , I MPHW ) several engine phases (MPH) U , MPH V , MPH W ) of the motor phases (MPH), in particular a neutral point current from a neutral point of the motor coils to a reference node or a reference potential node (GND). Subsequently, the device of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 is configured, according to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, to determine information about the zero crossing of the alternating component of the time course of the amplitude value of the time course of the intensity of the fluorescence radiation FL as the first control parameter. Furthermore, according to the technical teaching of WO 2024 041703A1 and DE 10 2022 005 094 A1, it is preferably designed to be used with one voltage value of a motor phase voltage of the motor phase voltages (V MPHU , V MPHV , V MPHW) of a motor phase of the motor phases (MPH U , MPH V , MPH W ) and / or with multiple voltage values ​​of multiple motor phase voltages (V MPHU , V MPHV , V MPHW ) several engine phases (MPH) U , MPH V , MPH W ) and / or with the single current value of one motor phase current of the motor phase currents (I MPHU , I MPHV , I MPHW ) of a motor phase of the motor phases (MPH U , MPH V , MPH W ) and / or with multiple current values ​​of the current values ​​of multiple motor phase currents of the motor phase currents (I MPHU , I MPHV , I MPHW ) several motor phases of the motor phases (MPH) U , MPH V , MPH W ) and / or with the single sum current value of a sum current of several motor phase currents of the motor phase currents (I MPHU , I MPHV , I MPHW ) several motor phases of the motor phases (MPH) U , MPH V , MPHW ) and / or with multiple sum current values ​​of multiple sum currents of the sum currents of multiple motor phase currents of the motor phase currents (I MPHU , I MPHV , I MPHW ) several motor phases of the motor phases (MPH) U , MPH V , MPH W ) as a second control parameter, on the other hand, to be combined with the first control parameter. According to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the device of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 is preferably configured to change the timing of the commutation of the current supply to coils of the motor, in particular to stator coils SL and / or in particular to rotor coils of the motor, depending on the first control parameter and on such a second control parameter.

[0039] Preferably, the device of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 is also configured, according to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, to determine from the first control parameter and the second control parameter a position of the magnetic field with the flux density B in the air gap LS of the motor relative to one or more motor phase current vectors of the motor phase currents (I MPHU , I MPHV , I MPHW ) to close and determine a spatial angle value of the angle between the position of the sensor element as the reference position on the one hand and the direction of one or more motor phase current vectors of the motor phase currents (I MPHU , I MPHV , I MPHW ) at the time of the zero crossing, the zero crossing of the alternating component of the temporal course of the amplitude value of the temporal value course of the intensity of the fluorescence radiation FL, on the other hand, is to be determined.

[0040] Furthermore, sensor fusion is advantageous here according to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1. Preferably, the device according to the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 comprises a position sensor POS. Preferably, the device is configured to determine position information POSS using this position sensor POS and to combine information about the zero crossing of the alternating component of the time course of the amplitude value of the time course of the intensity of the fluorescence radiation FL as a first control parameter with the position information as a second control parameter.In this case, according to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the device is preferably configured to change the timing of the commutation of the current supply to coils of the motor, in particular to stator coils SL and / or in particular to rotor coils, depending on the first control parameter and on such a second control parameter, in order to control in particular the position of the magnetic field B in the air gap LS relative to one or more motor phase current vectors of the motor phase currents (I. MPHU , I MPHV , I MPHW ) close.

[0041] In another variant of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, the device of the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 is preferably configured, according to the technical teaching of WO 2024 041 703 A1 and DE 10 2022 005 094 A1, to deduce from the first control parameter and the second control parameter a position of the magnetic field with flux density B in the air gap LS of the motor relative to the position of the rotor (GHR, PM, RMK) and a spatial angle value of the angle between the position of the sensor element as reference position on the one hand and the spatial position of the rotor at the time of the zero crossing of the alternating component of the time course of the amplitude value of the time course of the intensity of the Fluorescence radiation FL, on the other hand, is to be determined.

[0042] However, the technical teachings of WO 2024 041 703 A1 and DE 10 2022 005 094 A1 are not suitable for higher flux densities B ext (t), for example, of 400 mT and more, to be measured correctly in the air gap ag. In axial motors, magnetic field strengths up to 400 mT often need to be measured. This is not possible with the technical teaching disclosed in WO 2024 041 703 A1 and DE 10 2022 005 094 A1, because the NV-center-based sensor elements saturate at approximately 50 mT, or at the latest at 70 mT, and therefore no longer provide a usable measurement signal.

[0043] The technical teaching of document DE 10 2023 122 657 A1 teaches the self-adjusting coupling of an NV sensor element to an optical waveguide using radiation-cured, optically transparent substrate material, as well as robust optoelectronic evaluation. However, it does not address the problem of selectively extending the usable magnetic field measurement range in applications with high air gap fields. In particular, it lacks a method for defining and adjusting the sensitivity of the NV sensor element to the magnetic flux density applied to its center by means of its immediate surroundings, in order to avoid saturation effects at high field strengths and simultaneously ensure an optical access window for excitation and readout.Furthermore, the technical teaching of document DE 10 2023 122 657 A1 does not disclose any measures by which different, predetermined sensitivities are provided in a group of several sensor elements in order to specifically exploit overlapping characteristic curves for a wide, continuous measurement range coverage.

[0044] The technical teaching of document EP 4 310 458 A2 discloses NV-based sensor systems in which the control and evaluation device achieves a suitable operating point and high signal separation between pump radiation and fluorescence, among other things, by means of temporal modulation schemes and electronic compensation using compensation coils. Several sensor systems can be used for position determination in electrical machines, with robustness being increased by redundant evaluation of several identical sensor units.However, the technical teaching of document EP 4 310 458 A2 does not teach how to design the sensitivity of a single NV sensor element to the magnetic flux density at the location of the paramagnetic centers or to make it field-dependent, in order to keep high air gap field strengths usable for measurement without saturation effects, nor does it provide a teaching for providing different sensitivities in a group of several sensor elements in a way that leads to a continuous extension of the common measuring range. Further state of the art: Unpublished internal state of the art

[0045] The as yet unpublished German patent applications DE 10 2024 202 505 A1, DE 10 2024 121 450 A1, DE 10 2025 100 508 A1, DE 10 2025 100 512.5 and the international as yet unpublished application PCT / DE 2025 / 100 020 disclose an automotive, microwave-free high-voltage current sensor for low currents based on isotropic quantum sensor elements with NV centers and its applications. The problem here arose of overcoming the ambiguous assignment of fluorescence intensities (Ifl(t)) of the fluorescence radiation (FL) of the sensor elements (reference sign SE there, corresponds to reference sign NV here).These documents propose using multiple sensor elements with disordered and statistically uniformly oriented diamond crystals with NV centers, and designing the respective magnetic flux density (B(t)) differently for each sensor element by varying the geometry of the magnetic field-generating structures (meander loops in a current-carrying line to be measured) for each sensor element. Such a solution is not possible in the case of an axial disc rotor motor, since the respective air gap (ag1, ag2) between the magnetized rotor disk (RS) and the stator coil assembly (SSP1, SSP2) should preferably remain constant at every point along the entire air gap (ag1, ag2). Task

[0046] The proposal is therefore based on the task of providing a solution to the above problem of extending the measuring range of.

[0047] This task is solved by the independent claims. Further embodiments are the subject of dependent claims. Solution to the task: Basic idea

[0048] The basic idea is now not, as in documents DE 10 2024 2002 505 A1, DE 10 2024 121 450 A1, DE 10 2025 100 508 A1, DE 10 2025 100 512.5 and PCT / DE 2025 / 100 020, to modify the generation of the magnetic flux density, but to modify the sensitivity of the sensor elements (NV) themselves and thus, with the same external magnetic flux density (B ext(t)) to be able to operate in the respective air gap (ag1, ag2) of the disc rotor motor, so that no modification of the disc rotor motor and thus no reduction in the disc rotor motor's performance is necessary. For the necessary different modification of the respective sensitivity of the respective sensor elements (NV1, NV2), the basic idea is to equip the respective sensor elements (NV1, NV2) with different respective magnetic circuits, so that the respective effective magnetic flux density (B(t)) at the respective location of the respective paramagnetic centers (NV1, NV2) is the same for the same external magnetic flux density (B). ext (t)) in the respective air gap (ag1, ag2) of the disc rotor motor is different, so that the technical teachings of DE 10 2024 2002 505 A1, DE 10 2024 121 450 A1, DE 10 2025 100 508 A1, DE 10 2025 100 512.5 and PCT / DE 2025 / 100 020 for evaluating the respective fluorescence intensities (I fl(t)) of the respective sensor elements (NV1, NV2) can also be applied here.

[0049] To achieve this, it is first necessary to be able to manufacture magnetic resistors with precisely defined magnetic resistance values ​​in the immediate vicinity of the sensor elements (NV1, NV2). Furthermore, it is necessary to be able to attach the respective magnetic resistors to the respective sensor elements (NV1, NV2) and magnetically couple them together to form a magnetic circuit, which then, when a certain external magnetic flux density (B) is present, ext(t)) in the respective air gap (ag1, ag2) generates a respective internal magnetic flux density (B(t)) at the location of the paramagnetic centers of the respective sensor element (NV1, NV2). Preferably, the respective dimensions of the respective magnetic resistances in the respective magnetic circuits are then chosen such that the respective internal magnetic flux densities (B(t)) at the respective location of the respective paramagnetic centers of the respective sensor elements (NV1, NV2) differ from one sensor element (NV1, NV2) to another.

[0050] Local modulations of the air gap width in the axial disc rotor motor discussed here are generally not possible, since a minimum air gap width of the air gaps (ag1, ag2) is desired for maximum motor power.

[0051] The problem is solved using a first carrier material that reduces the magnetic flux density B(t) at the location of the sensor elements of several sensor elements in different ways, thus making the sensor elements (NV) less sensitive to varying degrees. The multiple different measurement signals from the different sensor elements then form a measurement signal vector, which can be evaluated by a control and evaluation device (CTR) and used to calculate the half-bridge control signals for controlling the commutation of the disc rotor motor. First carrier material

[0052] This document therefore proposes, as the core of the problem solution, a first carrier material for an optical sensor element (NV), in which the first carrier material (TM1) contains one or more particles that modify the magnetic flux density (B(t)) and are embedded in a matrix material (MM1) of the first carrier material (TM1). Preferably, these particles that modify the magnetic flux density (B(t)) are arranged, designed, and / or manufactured in such a way that they alter the sensitivity of the sensor element (NV). This property is the core of the problem solution, which will now be elaborated upon. Since the sensor element (NV) is to be an optical sensor element, its undisturbed control and readout must be ensured.Therefore, the first carrier material with the particles modifying the magnetic flux density (B(t)) leaves at least one optical access window for optically controlling and optically reading the sensor element (NV).

[0053] In a first variant of the first support material, the particles modifying the magnetic flux density (B(t)) comprise soft magnetic particles. This has the advantage that the particles modifying the magnetic flux density (B(t)), and thus the first support material, cause no or only negligible hysteresis of the respective sensor element (NV).

[0054] In a first variant of the first support material, the particles modifying the magnetic flux density (B(t)) are arranged within the first support material such that they enclose the sensor element (NV) except for at least one optical access window (OF1). This has the advantage that the particles modifying the magnetic flux density (B(t)) then form a chain among themselves to form magnetic resistances with lower magnetic resistance values, and the magnetic flux (B(t)) essentially flows through these particles modifying the magnetic flux density (B(t)) and no longer through the sensor element (NV) enclosed by the first support material (TM1).

[0055] The concentration of the particles modifying the magnetic flux density (B(t)), their size, and the thickness or shape of the first substrate determine the local magnetic resistance values ​​and thus the remaining strength of the magnetic flux (B(t)) at the location of the sensor element (NV) and therefore at the location of the paramagnetic centers within the sensor element (NV). By controlling these parameters (shape of the first substrate (thickness), density of the particles modifying the magnetic flux density (B(t)), and size of the particles modifying the magnetic flux density (B(t)), the shielding effect of the first substrate can be controlled and adjusted specifically for each sensor element. This enables the production of a multi-sensor module with several sensor elements, each with different sensitivities set by different first substrate materials and thus different saturation flux densities.This will now be explained in more detail.

[0056] In a second variant of the first support material, the particles modifying the magnetic flux density (B(t)) comprise ferrites and / or, preferably, superparamagnetic nanoparticles and / or, preferably, Permalloy and / or, preferably, Metglas. In each case, the magnetic hysteresis of the particles modifying the magnetic flux density (B(t)) is reduced.

[0057] In a third variant of the first support material, particles of the particles modifying the magnetic flux density (B(t)) exhibit a high magnetic susceptibility of at least 10 3 on. Area of ​​magnetic susceptibility χ\chiχ Typical materials Advantages χ<10(small) Aluminum, titanium dioxide, spies in low concentration • Precise control of the magnetic field • Low interference - ideal for precise calibration • No strong impact on the environment χ=10 2 (low to medium) NiZn ferrites, iron oxide nanoparticles with coating • Moderate magnetic effect with good controllability • Few hysteresis effects • Low interaction with other fields χ=10 3 (medium to high) Magnetite, maghemite, soft magnetic ferrites (e.g. MnZn) • Good field conduction properties • Strong local modification of flux density possible • Ideal for sensor shielding or field shaping χ=10 4 -10 5 (very high) Permalloy, Supermalloy, special ferrite ceramics • Highly efficient flow guidance and focusing / attenuation • High amplification / attenuation of the field effect on a sensor element • Suitable for highly sensitive sensor applications and sensor applications in high magnetic fields χ>10 5 (extremely high, rare) Special alloys, metal glass • Maximum field control and flow steering possible • Ideal for targeted strengthening / weakening at specific points • Enables extreme sensitivity changes in sensor elements

[0058] In a fourth variant of the first support material, particles of the particles modifying the magnetic flux density (B(t)) exhibit a low coercive field strength (H). c ) of less than 10 A / m. Advantages of different coercive field strengths H c Coercive field strength H c Magnetic behavior Typical materials Advantages Hc<10 A / m (very soft magnetic) Minimal hysteresis, almost reversible magnetization Permalloy, Supermalloy, MnZn ferrites, Metglas • Very low energy losses • Reversible magnetic behavior - ideal for sensor applications • No disturbing residual effects • Ideal for field amplification and flow guidance without distortion Hc≈10-100 A / m (soft magnetic) Low hysteresis, good controllability Ferrite (NiZn,MnZn), Magnetite • Low remanence, but somewhat more stable field formation • Wide industrial availability • Well suited for shielding applications, e.g., for reducing flux density in sensor elements Hc≈100-1000 A / m (medium hardness) Noticeable hysteresis, partially persistent Hard ferrites, uncoated iron oxide particles • Stable magnetization even in alternating fields • More suitable for permanent magnet applications, less so for sensor systems Hc>1000 A / m (hard magnetic) High remanence field, irreversible magnetization NdFeB, SmCo, hard ferrites • Permanent magnetization • Not suitable for sensor applications, but suitable for actuators or storage media Application-related advantages according to H c -Value:

[0059] For applications where the sensitivity of an optical sensor element (NV) is to be specifically changed by a first support material, particles with H are therefore suitable. c <10 A / m, e.g. Permalloy, Metglas, MnZn-Ferrite, are preferable due to the minimal hysteresis, the reversible field effect and the low energy losses.

[0060] In a fourth variant of the first support material, for certain applications with sensor elements modified in sensitivity and measuring range, it is advantageous for the first support material to be biocompatible. For example, the first support material can comprise biocompatible polymers such as polydimethylsiloxane (PDMS), polyethylene (PE) or polypropylene (PP), polyetheretherketone (PEEK), medical-grade polyurethane (PU), polylactic acid (PLA), or other biodegradable polymers, particularly as a matrix material in resorbable applications. Preferably, the first support material does not contain toxic plasticizers. Certain solvents or residual monomers may typically be present in the first support material. The particles that modify the magnetic flux density (B(t)) should also be biocompatible.A selection of biocompatible magnetic particles includes, for example, superparamagnetic iron oxide nanoparticles (SPIONs) such as magnetite (Fe3O4) and maghemite (γ-Fe2O3). These are frequently used in drug delivery, imaging (e.g., MRI), and biosensor applications. Biocompatibility can also be achieved by coating the magnetic flux density (B(t))-modifying particles with, for example, dextran, PEG, silica (SiO2), or polymers. These coatings typically serve to create chemically inert, hydrophilic, and non-immunogenic surfaces for the magnetic flux density (B(t))-modifying particles. The magnetic flux density (B(t))-modifying particles must not be released from the primary support material. This means that the magnetic flux density (B(t))-modifying particles should be embedded or encapsulated within the matrix.This applies generally, as released particles could also affect the disc rotor motor discussed here and / or other devices in which the sensor elements proposed here are used with a first carrier material containing particles that modify the magnetic flux density (B(t)). In particular, no abrasion should occur. Furthermore, no particles should be released under mechanical stress during the estimated product lifetime (i.e., until the end of the patient's life). For biocompatibility assessment, the following standards are typically referenced: ISO 10993 series – “Biological evaluation of medical devices”.

[0061] In a fifth variant of the first support material, particles, preferably all particles modifying the magnetic flux density (B(t)), are individually dispersed and not agglomerated within the matrix material of the first support material. This has the advantage that the magnetic resistance of the first support material is homogeneous and therefore no unnecessary distortion of the magnetic flux density (B(t)) occurs in the region of the sensor element (NV).

[0062] In a sixth variant of the first support material, the matrix material is a polymer material. This has the advantage that the first support material is easy to shape and can be easily machined.

[0063] In a seventh variant of the first carrier material, the matrix material is at least partially elastic to ensure mechanical stability and flexibility.

[0064] In an eighth variant of the first support material, the matrix materials of the first support material are arranged in a homogeneous distribution near the optical sensor element (NV), without considering the particles that modify the magnetic flux density (B(t)). This also has the advantage that the magnetic resistance of the first support material is homogeneous within the first support material, and therefore no unnecessary distortion of the magnetic flux density (B(t)) occurs in the region of the sensor element (NV).

[0065] In a ninth variant of the first substrate material, the particles of the magnetic flux density (B(t)) modifying particles are arranged in a non-homogeneous distribution near the optical sensor element. This has the advantage that the magnetic flux density is directed along the paths with a higher density of the magnetic flux density (B(t)) modifying particles. This allows for the creation of regions with reduced flux density at the expense of regions with increased flux density. Typically, the regions with a higher density of the magnetic flux density (B(t)) modifying particles are regions with increased flux density.

[0066] In a tenth variant of the first carrier material, the thicknesses (D) are TM1,1 , D TM1,2The layer of the first substrate material surrounding the sensor material contains particles that modify the magnetic flux density (B(t)) with a diameter of less than 1 mm and / or less than 500 µm and / or less than 250 µm and / or less than 100 µm and / or less than 50 µm and / or less than 25 µm and / or less than 10 µm. Besides the density of the particles modifying the magnetic flux density (B(t)), the thickness of the first substrate material is a parameter for influencing the guidance of the magnetic flux densities (B(t)) near the sensor element (NV). This has the advantage that the magnetic flux density is guided along paths with a greater thickness of the first substrate material while maintaining a relatively constant density of particles modifying the magnetic flux density (B(t)) within the first substrate material. This also allows for the creation of areas with reduced flow density to the detriment of areas with increased flow density.Typically, areas with greater thickness are areas with increased flux density.

[0067] In an eleventh variant of the first carrier material, the optical sensor element (NV) comprises a one-dimensional and / or two-dimensional and / or three-dimensional array of at least two sensor elements arranged in a grid or randomly ordered configuration. For the purposes of this document, it is therefore conceivable that a first carrier material could enclose multiple sensor elements, thus enabling redundancy and, consequently, the fulfillment of increased safety requirements and the achievement of increased precision through the use of computer- and / or machine-implemented algorithms, for example, by the control and evaluation device (CTR).

[0068] In a twelfth variant of the first carrier material, the particles are oriented essentially differently from one another, each with a substantially different orientation. This enables an isotropy of the dependence of the intensity (I). fl (t)) of the fluorescence radiation (FL) from the direction of the magnetic flux density (B(t)) relative to the respective sensor element (NV).

[0069] In a thirteenth variant of the first support material, the orientation of the particles is stochastically essentially uniformly distributed, which significantly improves this isotropy.

[0070] In a first variant of the first support material for reduced sensitivity of the sensor element (NV), particles modifying the magnetic flux density (B(t)) are designed, manufactured, dimensioned, and / or arranged such that they reduce the sensitivity of the sensor element (NV) to changes in the magnetic flux density (B(t)) at the location of the sensor element (NV) by weakening the flux density (B(t)) induced by the external magnetic field at the location of the sensor element (NV). This allows for a stretching of the characteristic fluorescence intensity / flux density curve (I). flThe magnetic flux density (B(t) characteristic curve) of the sensor element increases towards higher magnetic flux densities. For example, it is advantageous if the first substrate material surrounds the second substrate material containing the paramagnetic centers, and only one optical waveguide penetrates the layer of the first substrate material to enable optical control and optical readout of the sensor element. The layer of the first substrate material then weakens the magnetic flux density (B(t)) at the respective location of the respective paramagnetic centers of the sensor element (NV), thus reducing the sensitivity of the intensity (I). fl (t)) of the fluorescence radiation (FL) of the paramagnetic centers in the second support material of the sensor element (NV) versus the local magnetic flux density (B ext (t)).

[0071] In a second variant of the first carrier material for reduced sensitivity of the sensor element (NV), particles modifying the magnetic flux density (B(t)) exhibit high magnetic permeability. The magnetic permeability µ is composed of the magnetic constant µ₀ = 4π·10⁻⁶. -7 H / m and the relative permeability µ r The relative permeability µ r is the more common comparative value: • µr=1: Air, vacuum, non-magnetic materials (e.g. glass, plastic) • µr<10: low permeability • µr>1000: high permeability (e.g., soft magnetic materials)

[0072] For the purposes of this document, the threshold for "low magnetic permeability" is defined as a material exhibiting low magnetic permeability if: µ r >1000 applies to the material. This can be expressed in absolute form as µ. r >4π·10 -3 H / m≈1.26·10 -2They should be written as H / m.

[0073] This assumes that the particles modifying the magnetic flux density (B(t)) are not mixed with the particles in the second support material, which comprise the paramagnetic centers.

[0074] In a third variant of the first carrier material for reduced sensitivity of the sensor element (NV), the arrangement of the particles modifying the magnetic flux density (B(t)) causes a deflection of the magnetic flux density (B). ext (t)) of the external magnetic field in the area and / or surroundings of the sensor element (NV) and / or shielding of the sensor element (NV) from the magnetic flux density (B) ext (t)) of the external magnetic field. In the context of this document, the adjective "external" means lying outside the device part formed by the first support material and / or the sensor element (NV).

[0075] In a first variant of the first support material for increased sensitivity of the sensor element (NV), particles modifying the magnetic flux density (B(t)) are designed, manufactured, dimensioned, and / or arranged such that they increase the sensitivity of the sensor element (NV) to changes in the magnetic flux density (B(t)) at the location of the sensor element (NV) by amplifying the flux density (B(t)) induced by the external magnetic field at the location of the sensor element (NV). This enables, in particular, improved resolution of the measurement of magnetic flux densities (B(t)) at lower values ​​of the magnetic flux density (B(t)) at the location of the paramagnetic centers in the second support material of the sensor element (NV).

[0076] In a second variant of the first carrier material for increased sensitivity of the sensor element (NV), the particles modifying the magnetic flux density (B(t)) exhibit low magnetic permeability. As mentioned above, the magnetic permeability µ is derived from the magnetic constant µ₀ = 4π·10⁻⁶. -7 H / m and the relative permeability µ r together. The relative permeability µ r is the more common comparative value: • µr=1: Air, vacuum, non-magnetic materials (e.g. glass, plastic) • µr<10: low permeability • µr>1000: high permeability (e.g., soft magnetic materials)

[0077] The document presented here defines the limit for "low magnetic permeability" as a material exhibiting a magnetic permeability of µ. r <10. This can also be expressed in absolute form as µ<4π·10 -6 H / m≈1.26·10 -5They should be written as H / m.

[0078] In a third variant of the first support material for increased sensitivity of the sensor element (NV), particles, preferably all particles, of the particles modifying the magnetic flux density (B(t)) focus the magnetic field lines of the magnetic flux density (B(t)) and direct them onto the sensor element (NV). This also enables, in particular, a better resolution for measuring the magnetic flux densities (B). ext (t)) at lower values ​​of the magnetic flux density (B(t)) at the location of the paramagnetic centers in the second support material of the sensor element (NV).

[0079] In a fourth variant of the first carrier material for increased sensitivity of the sensor element (NV), particles, preferably all particles, modifying the magnetic flux density (B(t)) are arranged such that they locally enhance the magnetic field intensity in a region of the sensor element. This also enables, in particular, a better resolution for measuring the magnetic flux densities (B). ext (t)) at lower values ​​of the magnetic flux density (B(t)) at the location of the paramagnetic centers in the second support material of the sensor element (NV).

[0080] In a first, further variant of the first support material, the matrix materials of the first support material exhibit higher optical transparency, especially for pump radiation (LB) and / or fluorescence radiation (FL). This makes it possible to use the material as an optical window for particles that modify the magnetic flux density (B(t)) in regions of low and / or negligible density.

[0081] In a second, further variant of the first support material, the first support material has a density of 1 to 3 g / cm³. 3 This size was found to be particularly advantageous for achieving low magnetic resistance values ​​of the first substrate material.

[0082] In a third, further variant of the first support material, the first support material is thermally conductive to enable efficient heat dissipation. This may have the advantage that the heating from the pump radiation (LB) can be dissipated via the outer surface of the sensor element.

[0083] In a fourth, further variant of the first carrier material, the particles, preferably all particles, that modify the magnetic flux density (B(t)) have a spherical geometry. This has the advantage of reducing mechanical stresses and thus improving the service life.

[0084] In a fifth, further variant of the first substrate material, the optical access window thickness is less than 1 mm, preferably less than 500 µm, preferably less than 250 µm, and preferably less than 100 µm. This has the advantage that the optical access window has less influence on the pump radiation (LB) and the fluorescence radiation (FL). Ideally, the thickness of the optical access window is 0 m, and an optical waveguide or another functionally equivalent optical element penetrates the layer of the first substrate material at one point, transporting the pump radiation to the paramagnetic centers and the fluorescence radiation from the paramagnetic centers away from them to an evaluation device, so that no interaction occurs between the pump radiation (LB) and the fluorescence radiation (FL) with the first substrate material.

[0085] In a sixth, further variant of the first substrate material, the first substrate material is thermally stable at temperatures up to 120°C, better up to 150°C, better up to 175°C, better up to 200°C, better up to 225°C, better up to 250°C. This has the advantage that the sensor element can be used in highly stressed axial motors for driving electric vehicles. Examples of the matrix material of the first substrate material for the different temperature ranges are as follows: A) Temperature range: 120 °C Material: Polymethyl methacrylate (PMMA) Transparency: Excellent in the visible spectrum Advantages: Lightweight, cost-effective, easy to process Limitations: Limited thermal stability; suitable for applications up to approximately 120°C B) Temperature range: 150 °C Material: Polycarbonate (PC) Transparency: Very good in the visible area Advantages: Higher impact strength than PMMA, better heat resistance Limitations: May yellow upon prolonged exposure to high temperatures C) Temperature range: 175 °C Material: Cyclo-olefin polymer (COP) Transparency: Excellent in the visible area Advantages: Good chemical resistance, low moisture absorption Limitations: Slightly more expensive than PMMA and PC. D) Temperature range: 200 °C Material: Polyetheretherketone (PEEK) Transparency: Limited; special transparent qualities available Advantages: Excellent mechanical and chemical properties Limitations: Transparent versions are expensive and harder to obtain. E) Temperature range: 225 °C Material: Quartz glass (SiO2) Transparency: Very high in the visible and UV range Advantages: Extremely high temperature resistance, excellent optical properties Limitations: Brittle, difficult to work with F) Temperature range: 250°C Material: Sapphire glass (Al2O3) Transparency: Excellent in the visible area Advantages: Extremely hard and scratch-resistant, very high temperature resistance Limitations: Very expensive, difficult to work with

[0086] In a seventh, further variant of the first substrate material, the first substrate material is thermally stable at low temperatures down to 10 µK. This is the case for many of the materials listed above. Problems arise when processing with other materials, so the correct combination of materials must be considered during the design process. For example, the following are suitable: 1. Quartz glass (synthetic silicon dioxide, SiO2) Optical properties: Excellent transparency in the visible spectrum, including wavelengths of 520 nm and 635 nm. Thermal properties: Extremely low coefficient of thermal expansion; remains structurally stable down to the microkelvin range. Advantages: High chemical resistance, low thermal expansion, widely used in cryogenic optical applications. Limitations: Brittle; mechanical processing requires specialized procedures. 2. Sapphire glass (crystalline aluminum oxide, Al2O3) Optical properties: Very good transparency in the visible range, including 520 nm and 635 nm. Thermal properties: High thermal conductivity and stability; suitable for applications at extremely low temperatures down to 10 µK. Advantages: Exceptional hardness, high scratch resistance, chemical inertness. Limitations: Difficult to machine; higher cost compared to quartz glass.

[0087] In an eighth, further variant of the first carrier material, the interaction of particles, preferably all particles, modifying the magnetic flux density (B(t)) with the sensor element (NV) is reversible and not permanent. This has, among other advantages, that no hysteresis occurs which would prevent the calibration of the sensor element (NV).

[0088] In a ninth, further variant of the first carrier material, the sensitivity of the sensor element (NV) with respect to the intensity (I) fl{t)) The fluorescence radiation (FL) emitted by the paramagnetic centers (NV) of the sensor element relative to the magnetic flux density (B(t)) at the respective location of the paramagnetic centers can be specifically adjusted by design and / or manufacturing and / or dimensioning and / or shaping and / or arrangement of the first support material. This makes it possible to use several sensor elements with different sensitivities simultaneously and thus generate a measurement vector from these measurements, thereby increasing the precision of the measurement.

[0089] In a tenth, further variant of the first substrate material, the matrix material of the first substrate is stable against moisture. Furthermore, in this tenth variant, the matrix material of the first substrate material does not undergo any significant change in its magnetic properties under high humidity. This is important, for example, when an axial disc rotor motor is used in a humid climate. This regularly occurs when using motors in electric cars that operate in humid climates. Without such stability, such an electric motor cannot be operated. This requirement also applies to the commutation system for controlling the commutation of the current supply to the stator coils. The aforementioned sensor elements form a core component of this control system, as they detect the position of the magnetic field.However, moisture is commonplace here, which is why moisture resistance of the sensor elements with the first carrier material is of great importance. Shielded sensor element (NV)

[0090] Next, this document deals with a shielded sensor element (NV) with reduced or modified sensitivity, which, by means of the first substrate material described above, can have its sensitivity and intensity (I) adjusted. fl (t)) its fluorescence radiation (FL) versus external magnetic flux densities (B ext(t)) is reduced. The present document discloses a shielded sensor element (NV) with reduced or modified sensitivity, wherein the sensor element (NV) comprises a second support material (TM2). The second support material (TM2) typically comprises a plurality of magnetic field-sensitive particles, in particular crystals. These crystals are preferably embedded in the second support material (TM2) in a disordered manner. One or more or all of these magnetic field-sensitive particles typically have paramagnetic centers. Preferably, the paramagnetic centers of these paramagnetic centers are configured to, upon irradiation with pump radiation (LB) with a pump radiation intensity (I) other than 0 W, pmp (t)) and a pump radiation wavelength (λ pmp ) a fluorescence radiation (λ fl ) with a time delay of fluorescence radiation (Δfl(t)), which can be 0s, and a fluorescence wavelength (λfl ) and a fluorescence radiation intensity (I fl (t)) to emit. The time delay (Δfl(t)) of intensity modulations of the fluorescence radiation intensity (I) fl (t)) of the fluorescence radiation (FL) versus intensity modulations of the pump radiation intensity (I) pmp (t)) of the pump radiation (LB) and / or the fluorescence radiation intensity (I) fl(t)) themselves typically depend on the value of the magnetic flux density B(t) at the location of the paramagnetic centers. The sensor element (NV) preferably comprises a first support material (TM1) as described above. Preferably, the first support material (TM1), which comprises the particles modifying the magnetic flux density (B(t)), at least partially envelops the second support material (TM2), which comprises the paramagnetic centers in the magnetic field-sensitive particles and these magnetic field-sensitive particles. This has the advantage that the sensor element (NV) shielded by the first support material (TM1) exhibits a different sensitivity of the fluorescence intensity (I) compared to the sensor element (NV) not shielded by the first support material (TM1). fl (t)) of the external magnetic flux density (B ext(t)). This allows sensor elements (NV1, NV2) with different respective sensitivities to the respective fluorescence intensity (I). fl (t)) of the external magnetic flux density (B ext (t)) to use, which enables the formation of a measurement vector signal, which enables a measurement range extension of the corresponding device.

[0091] In a first variant of the shielded sensor element (NV), the particles comprise crystals. This has the advantage that the fluorescence of color centers and paramagnetic centers in crystals is generally relatively narrowband and very stable.

[0092] In a second variant of the shielded sensor element (NV), the crystals comprise diamonds (DM). Diamond offers a significant number of advantages. It is optically very broadband transparent. It is mechanically very hard and conducts heat exceptionally well. Therefore, paramagnetic centers in diamond are very stable. Furthermore, phonons couple poorly into laser-cooled paramagnetic centers in diamond, which allows for longer T2 times.

[0093] In a third variant of the shielded sensor element (NV), the sensor element (NV) comprises diamond crystals with paramagnetic centers, preferably NV centers and / or ST1 centers and / or SiV centers and / or PbV centers and / or GeV centers, with NV centers being particularly suitable. These have the advantages of being, firstly, very stable and, secondly, very well researched.

[0094] In a fourth embodiment of the shielded sensor element (NV), the shielded sensor element is coupled to one or more optical functional elements, for example, an optical fiber (OF). The one or more optical functional elements can also be a complex optical system. Preferably, these one or more optical functional elements are configured to: first, transport the pump radiation (LB) to the magnetic field-sensitive particles of the sensor element (NV); second, irradiate the magnetic field-sensitive particles of the sensor element (NV) with pump radiation (NV); third, detect the fluorescence radiation (FL) of the paramagnetic centers (NV) of the magnetic field-sensitive particles of the sensor element (NV); and fourth, transport the detected fluorescence radiation away from the sensor element (NV).Since the fluorescence intensity (Ifl(t)) of the fluorescence radiation (FL) depends on the magnetic flux density (B(t)) at the location of the paramagnetic centers, the above process is central for the optical control and optical readout of the sensor element via one or more optical functional means. This preferably occurs via the aforementioned optical window of the first support material (TM1). Multi-sensor element module (MSEM)

[0095] The following document describes the connection of several shielded sensor elements (NV), as previously described, to a multi-sensor element module (MSEM).

[0096] This document proposes a multi-sensor element module (MSEM) comprising at least two sensor elements (NV) as previously described. Preferably, the multi-sensor element module (MSEM) comprises two, better than two, better than three, better than four, better than five, better than ten, better than n sensor elements (NV), where n is a positive integer greater than 1. This enables the generation of an n-dimensional measurement vector signal, where the individual measurement component signals of the n measurement component signals of the n-dimensional measurement vector signal each correspond to the respective fluorescence intensity (I). fl (t)) of the n fluorescence intensities (I fl(t)) are assigned to a respective sensor element of the n sensor elements (NV) of the multi-sensor element module (MSEM). For n=2, the multi-sensor element module (MSEM) therefore comprises a first sensor element (NV1) and a second sensor element (NV2). If only the case with n=2 is considered below, a knowledgeable person can easily deduce the case with n=2.

[0097] In a first variant of the multi-sensor element module (MSEM), the first sensitivity is that of the first intensity (I). fl1 (t)) of the first fluorescence radiation (FL1) of the first magnetic field sensitive particle of the first sensor element (NV1) compared to the value of the magnetic flux density (B(t)) at the location of the paramagnetic centers of the first magnetic field sensitive particle of the first sensor element (NV1) of the second sensitivity of the second intensity (I fl2(t)) of the second fluorescence radiation (FL2) of the second magnetic field-sensitive particle of the second sensor element (NV2) differs from the value of the magnetic flux density (B(t)) at the location of the paramagnetic centers of the second magnetic field-sensitive particle of the second sensor element (NV2). In this first variant of the multi-sensor module (MSEM) with n sensor elements, the first sensitivity of the intensity (I) fl1 (t)) of the fluorescence radiation (FL1) of the magnetic field sensitive particles of one of the sensor elements (NV) of the n sensor elements relative to the value of the magnetic flux density (B(t)) at the location of the paramagnetic centers of the magnetic field sensitive particles of this sensor element (NV) of the respective sensitivities of the respective intensities (I fl2(t)) of the respective fluorescence radiations (FL) of the respective other magnetic field sensitive particles of the respective other sensor elements (NV) compared to the value of the magnetic flux density (B(t)) at the location of the respective other paramagnetic centers of the respective other magnetic field sensitive particles of the respective other sensor elements (NV) of the n sensor elements (NV).

[0098] In a second variant of the multi-sensor element module (MSEM), the first sensor element (NV1) and the second sensor element (NV2), or the n sensor elements of the multi-sensor element module (MSEM), are mechanically connected to form a fixed multi-sensor element module (MSEM). This has the advantage that this multi-sensor element module (MSEM) can be easily handled as a single device component and, for example, can be easily placed in the air slot of an axial disc rotor motor.

[0099] In a third variant of the multi-sensor element module (MSEM), the first saturation value of the first sensitivity of the first sensor element (NV1) is the value of the magnitude of the first magnetic flux density (B(t)) at the location of the first sensor element (NV1), above which the value of this first magnetic flux density (B(t)) has no significant influence on the first intensity (I). fI1 (t)) of the first fluorescence radiation (FL1) of the first crystals of the first sensor element (NV1) more. In this third variant of the multi-sensor module (MSEM), the second saturation value of the second sensitivity of the second sensor element (NV2) is the value of the magnitude of the second magnetic flux density (B(t)) at the location of the second sensor element (NV2) above which the value of this second magnetic flux density (B(t)) has no significant influence on the second intensity (I). fl2(t)) of the second fluorescence radiation (FL2) of the second crystals of the second sensor element (NV1) has more. In this third variant of the multi-sensor element module (MSEM), the second saturation value differs from the first saturation value. This has the advantage that the first and second sensor elements then have different measurement ranges, so that the measurement vector can be successfully evaluated over a larger measurement range using computer- and / or machine-implemented methods and / or algorithms. Device for detecting magnetic flux density (B ext (t)),

[0100] The document presented here further describes a device for detecting a magnetic flux density (B ext (t)). The device presented here for detecting a magnetic flux density (B ext(t)) typically comprises a control and evaluation device (CTR) and a multi-sensor element module (MSEM) as previously described. The control and evaluation device (CTR) is typically configured to generate the one or more pump beams (LB1, LB2) for the at least two sensor elements (NV1, NV2) of the at least one multi-sensor element module (MSEM). Furthermore, the device typically comprises optical functional elements, in particular two or more optical fibers (OF1, OF2), preferably in the form of an optical fiber system (OF1, OF2). S), which are configured to supply one or more pump beams (LB1, LB2) to the at least two sensor elements (NV1, NV2) of the at least one multi-sensor element module (MSEM) and to irradiate the at least two sensor elements (NV1, NV2) of the at least one multi-sensor element module (MSEM) with this one pump beam or the several respective pump beams (LB1, LB2). Furthermore, the device preferably comprises optical functional elements, in particular two or more optical fibers (LWL1, LWL2), preferably in the form of an optical fiber system (LWL). SThe device comprises optical functional elements, in particular two or more dichroic mirrors (F11, F12), configured to detect the respective fluorescence radiation (FL1, FL2) from the respective paramagnetic centers (NVZ1, NVZ2) of the respective magnetic field-sensitive particles, in particular the crystals, of the respective sensor elements (NV1, NV2), and to direct each of these radiations to a respective photodetector (PD1, PD2) of the device. The device also preferably includes optical functional elements, in particular two or more dichroic mirrors (F11, F12), configured to enable this transmission of the respective fluorescence radiation (FL1, FL2) from the respective paramagnetic centers of the respective magnetic field-sensitive particles, in particular the respective crystals, of the respective sensor elements (NV1, NV2) to the respective photodetectors (PD1, PD2), and to prevent this transmission of the respective pump radiation (LB1, LB2) to the respective photodetectors (PD1, PD2), and, if necessary, toto also prevent the supply of other radiation to the respective photodetectors (PD1, PD2). The respective photodetectors (PD1, PD2) are preferably each configured to generate a respective receiver output signal (S01, S02) depending on the respective intensity (I. fl1 (t), (I fl2 (t)) to generate. The control and evaluation device (CTR) is preferably configured to evaluate the respective receiver output signals (S01, S02) and, depending on these receiver output signals (S01, S02), to generate one or more measured values ​​and / or one or more measured value and / or control signals.

[0101] Such a device has the advantage that the magnetic flux density B to be measured ext (t) does not need to be generated differently than in the technical teaching of PCT / DE 2025 100 020. Therefore, it is conceivable to use this technical teaching for measuring higher magnetic flux densities B.ext (t) than in the PCT / DE 2025 100 020, which is limited by the saturation of the NV centers at 50 mT. The magnetic flux density in disc rotor motors, for example, reaches up to 400 mT, which makes controlling these motors extremely difficult. Air gap sensor in the form of a quantum sensor for a disc rotor motor

[0102] The document presented here describes an application of the previously discussed device for measuring the magnetic flux density (B). ext(t)) in a first air gap (ag1) and / or in the first stray field of the first air gap (ag1) of a disc rotor motor. The disc rotor motor has a rotatable or rotatably mounted shaft (AX). The disc rotor motor has at least one rotor disk (RS) that is sectionally magnetizable and / or sectionally magnetized and / or sectionally permanently magnetized. The rotor disk (RS) is attached to the shaft (AX) and forms a connection with the shaft (AX) at least temporarily, such that the shaft (AX) is perpendicular to the rotor disk (RS) and the rotor disk (RS) rotates with the shaft (AX) during rotation, and vice versa. The disc rotor motor also has at least one first stator coil assembly (SSP1) that is flat on at least one side with a first surface.The first stator coil assembly (SSP1) forms the first air gap (ag1) between this first surface and a first surface of the rotor disk (RS). The assembly of rotor disk (RS) and shaft (AX) is rotatably mounted relative to the first stator coil assembly (SSP1). The disc rotor motor is characterized by the fact that it includes at least one first multi-sensor element module (MSEM1), as previously described, and that the multi-sensor element module (MSEM1) is located in the first air gap (ag1) and / or within the effective area of ​​the magnetic flux density (B). ext (t)), which forms in the first air gap (ag1). The air gap sensor described here can be used in any of the air gaps (ag1, ag2) of a disc rotor motor or other motors. It can also be used in other applications, such as current sensors, power sensors, fuses, etc., where the magnetic field needs to be detected. Quantum sensor controlled disc rotor motor

[0103] Since the measurement of the magnetic flux density B ext (t) in the air gap (ag1) is ensured, this document now describes the use of the previously described air gap sensor for controlling the current flow to the stator coils of the stator coil packs SSP1 and SSP2 of the disc rotor motor. This document therefore proposes a quantum sensor-controlled disc rotor motor. Preferably, the quantum sensor-controlled disc rotor motor proposed here comprises a disc rotor motor with an air gap sensor, as previously described. Furthermore, the quantum sensor-controlled disc rotor motor preferably comprises a first device for detecting a first magnetic flux density (B). ext(t)) for example in the first air gap (ag1) of the disc rotor motor. The use of further air gap sensors in this first air gap (ag1) and / or other air gaps (ag2), especially at other angular positions, is conceivable and desirable. The first device uses to detect a first magnetic flux density (B ext (t)) in the first air gap (ag1) of the disc rotor motor as its multi-sensor element module (MSEM) the first multi-sensor element module (MSEM1) of the disc rotor motor as an air gap sensor. The control and evaluation device (CTR) of the first device for detecting a first magnetic flux density (B ext(t)) in the first air gap (ag1) of the disc rotor motor is configured to evaluate the respective receiver output signals (S01, S02) and, depending on these receiver output signals (S01, S02), to generate one or more half-bridge control signals (HSL) as control signals. The quantum sensor-controlled disc rotor motor has the aforementioned one or more half-bridge control signals (HSL). These one or more half-bridge control signals (HSL) control the electronic switches (T HU , T LU , T HV , T LV , T HW , T LW ) one or more first half-bridges (HB1, HB2, HB3). These one or more first half-bridges (HB1, HB2, HB3) then supply current via their respective motor phases (motor connection lines) (MPH). U , MPH V , MPH W ) the first stator coils (SL1, SL2, SL3) of the first stator coil package (SSP1) of the disc rotor motor with respective electrical currents (I U , IV , I W ) depending on the one or more half-bridge control signals (HSL) and thus depending on the receiver output signals (S01, S02) and thus ultimately depending on the intensities (I fl1 (t), I fl2 (t)) of the fluorescence radiations (FL1, FL2) of the sensor elements (NV1, NV2) of the multi-sensor element module (MSEM1). Such a quantum sensor controlled disc rotor motor can be used, in particular, when GaN transistors and / or other wide-bandgap transistors are used as electronic switches (T). HU , T LU , T HV , T LV , T HW , T LW ) can be controlled significantly faster and more precisely. The document presented here describes further advantages below. In particular, the technical teaching presented here enables the measurement of higher magnetic flux densities B. ext(t) directly in the respective air gap (ag1, ag2) up to magnetic flux densities of 100 mT and beyond to 200 mT and beyond to 400 mT and beyond. It is therefore important that the disc rotor motor has at least one air gap sensor, for example as presented here, which is configured to detect magnetic flux densities B ext (t) in one of its air gaps of more than 100 mT and / or better than 200 mT and / or better than 400 mT with a cutoff frequency of more than 100 kHz and / or better than 200 kHz and / or more than 500 kHz and / or better than 1 MHz. This enables significant energy savings and allows for better and more dynamic control of the disc rotor motor, as well as other advantages.

[0104] In a first variant of the quantum sensor-controlled disc rotor motor, the quantum sensor-controlled disc rotor motor is preferably configured to, depending on the determined time course of the amplitude value of the time course of the intensity (I fl1 ,(t), I fl2 ,(t)) the fluorescence radiations (FL1, Fl2) the electrical current the first stator coils (SL1, SL2, SL3) of the first stator coil package (SSP1) of the disc rotor motor with respective electrical currents (I U , I V , I W ) and to control the electrical current supply to one or more rotor coils of the disc rotor motor in the rotor disk (RS) by means of a half-bridge controller, in particular by means of the control and evaluation device (CTR), in conjunction with one or more further half-bridges (HBZ). This supports the advantages already mentioned and further improves these parameters.

[0105] In a second variant of the quantum sensor-controlled disc rotor motor, the disc rotor motor preferably has n motor phases (MPH). U , MPH V , MPH W ) with n as a positive integer greater than 2, wherein the device supplies each of these n motor phases with a corresponding motor phase current (I) MPHU , I MPHV , I MPHW ) of n motor phase currents by means of a corresponding half-bridge (HB1, HB2, HB3) and wherein the motor phase currents are at least periodically periodic with a period T and where each of the motor phase currents (I MPHU , I MPHV , I MPHW ) a current angle (φ MPHU , φ MPHV , φ MPHW ) is assigned. In this second variant of the quantum sensor-controlled disc rotor motor, the motor phase currents can preferably be represented as a sequence of motor phase currents (I MPHU , I MPHV , I MPHW) are ordered such that a preceding motor phase current differs in its respective current angle from the current angle of the following motor phase current by 2π / n, so that each motor phase current of the motor phase currents (I MPHU , I MPHV , I MPHW ) a motor phase current vector is assigned, the orientation of which corresponds to the current angle of the motor phase current and its length to the magnitude of the motor phase current.

[0106] This has the advantage that a good measurement of the rotating field becomes possible due to the motor symmetry. Advantage

[0107] Such a device, as described above, enables the detection of the magnetic field in the air gap of a motor without disturbing this magnetic field, without causing EMC problems, and without the issues associated with the lack of galvanic isolation. The installation space required for such a solution is extremely small. The solution is robust against thermal and chemical conditions. For example, it functions even at 100°K and potentially down to 0°K.

[0108] The features of the above description and their sub-features can be combined with each other and with other features and sub-features of this proposal and with other features of the description as desired, provided that the result of this combination is meaningful.

[0109] For this purpose, it is not necessary to include all sub-characteristics of a characteristic in one characteristic in the case of a combination.

[0110] The features described in the description and the claims are therefore only preferred combinations of characteristics from various examples. The feature references can thus be expressly changed if appropriate. This simplifies the revision of the proposal. The claims themselves are derived from the respective applicable claims. Features

[0111] The following features provide a structured overview of the invention. They do not constitute claims, which are defined exclusively in the claims themselves. The references indicate preferred relationships. The features and their sub-features can be combined as desired to solve problems, provided meaningful relationships emerge. Therefore, the preceding description should be consulted during any further work. The features are numbered according to the format XY, where X indicates the feature group and Y the feature number. 1.1 First carrier material for an optical sensor element (NV), wherein the first support material contains particles modifying the magnetic flux density (B(t)) which are embedded in a matrix material, and wherein these particles modifying the magnetic flux density (B(t)) are arranged and / or constructed and / or manufactured in such a way as to change the sensitivity of the sensor element (NV) and wherein these particles modifying the magnetic flux density (B(t)) leave at least one optical access window for optically driving and optically reading the sensor element (NV). 1.2 First carrier material, in particular according to feature 1.1, wherein the particles modifying the magnetic flux density (B(t)) include soft magnetic particles. 1.3 First carrier material, in particular according to one of the features 1.1 to 1.2, wherein the particles modifying the magnetic flux density (B(t)) are arranged such that they enclose the sensor element (NV) except for at least one optical access window. 1.4 First carrier material, in particular according to one of the features 1.1 to 1.3, wherein the particles modifying the magnetic flux density (B(t)) comprise ferrites and / or wherein the magnetic flux density (B(t)) modifying particles include superparamagnetic nanoparticles and / or wherein the magnetic flux density (B(t)) modifying particles include Permalloy and / or comprising particles that modify the magnetic flux density (B(t)) of Metglas. 1.5 First carrier material, in particular according to one of the features 1.1 to 1.3, wherein particles of the particles modifying the magnetic flux density (B(t)) have a high magnetic susceptibility of at least 10 3 exhibit. 1.6 First carrier material, in particular according to one of the features 1.1 to 1.4, where particles of the particles modifying the magnetic flux density (B(t)) have a low coercive field strength (H) c ) of less than 10 A / m. 1.7 First carrier material, in particular according to one of the features 1.1 to 1.6, where the first carrier material is biocompatible. 1.8 First carrier material, in particular according to one of the features 1.1 to 1.7, wherein particles, preferably all particles, modifying the magnetic flux density (B(t)) are individually dispersed and not agglomerated in the matrix material of the first support material. 1.9 First carrier material, in particular according to one of the features 1.1 to 1.8, where the matrix material is a polymer material. 1.10 First carrier material, in particular according to one of the features 1.1 to 1.9, the matrix material is at least partially elastic to ensure mechanical stability and flexibility. 1.11 First carrier material, in particular according to one of the features 1.1 to 1.10, wherein the matrix materials of the first support material are arranged in a homogeneous distribution near the optical sensor element, without considering the particles modifying the magnetic flux density (B(t)). 1.12 First carrier material, in particular according to one of the features 1.1 to 1.11, wherein the particles of the particles modifying the magnetic flux density (B(t)) are arranged in a non-homogeneous distribution near the optical sensor element. 1.13 First carrier material, in particular according to one of the features 1.1 to 1.12, where the thicknesses (D TM1,1 , D TM1,2) the layer of the first support material surrounding the sensor material with the particles modifying the magnetic flux density (B(t)) are less than 1 mm and / or less than 500 µm and / or less than 250 µm and / or less than 100 µm and / or less than 50 µm and / or less than 25 µm and / or less than 10 µm. 1.14 First carrier material, in particular according to one of the features 1.1 to 1.13, wherein the optical sensor element comprises a one-dimensional and / or two-dimensional and / or three-dimensional, lattice-shaped or disorderly arranged array of at least two sensor elements. 1.15 First carrier material, in particular according to one of the features 1.1 to 1.14, the particles are essentially oriented differently from each other, each with an essentially different orientation. 1.16 First carrier material, in particular according to feature 1.15, where the orientation of the particles is stochastically essentially uniformly distributed. Sub-characteristics indicating reduced sensitivity of the sensor element: 1.17 First carrier material, in particular according to one of the features 1.1 to 1.16, wherein particles of the particles modifying the magnetic flux density (B(t)) are designed and / or manufactured and / or dimensioned and / or arranged such that they reduce the sensitivity of the sensor element (NV) to changes in the magnetic flux density (B(t)) at the location of the sensor element (NV) by weakening the flux density (B(t)) caused by the external magnetic field at the location of the sensor element (NV). 1.18 First carrier material, in particular according to feature 1.17, where particles of the particles modifying the magnetic flux density (B(t)) exhibit high magnetic permeability. 1.19 First carrier material, in particular according to one of the features 1.17 to 1.18, wherein the arrangement of the particles modifying the magnetic flux density (B(t)) causes a deflection of the magnetic flux density (B ext (t)) of the external magnetic field in the area and / or surroundings of the sensor element (NV) and / or shielding of the sensor element (NV) from the magnetic flux density (B) ext (t)) of the external magnetic field. Sub-features for increased sensitivity of the sensor element: 1.20 First carrier material, in particular according to one of the features 1.1 to 1.16, wherein particles of the particles modifying the magnetic flux density (B(t)) are designed and / or manufactured and / or dimensioned and / or arranged such that they increase the sensitivity of the sensor element (NV) to changes in the magnetic flux density (B(t)) at the location of the sensor element (NV) by amplifying the flux density (B(t)) caused by the external magnetic field at the location of the sensor element (NV). 1.21 First carrier material, in particular according to feature 1.20, where particles of the particles modifying the magnetic flux density (B(t)) exhibit low magnetic permeability. 1.22 First carrier material, in particular according to one of the features 1.20 to 1.21, wherein particles, preferably all particles, of the particles modifying the magnetic flux density (B(t)) focus the magnetic field lines of the magnetic flux density (B(t)) and direct them onto the sensor element (NV). 1.23 First carrier material, in particular according to one of the features 1.20 to 1.22, wherein particles, preferably all particles, of the particles modifying the magnetic flux density (B(t)) are arranged such that they locally increase the magnetic field intensity at a region of the sensor element. Additional sub-features for further details and design variants: 1.24 First carrier material, in particular according to one of the features 1.1 to 1.23, wherein the matrix materials exhibit higher optical transparency, especially for pump radiation (LB) and / or fluorescence radiation (FL). 1.25 First carrier material, in particular according to one of the features 1.1 to 1.24, where the first support material has a density of 1 to 3 g / cm³ 3 exhibits. 1.26 First carrier material, in particular according to one of the features 1.1 to 1.25, the first support material is thermally conductive to enable efficient heat dissipation. 1.27 First carrier material, in particular according to one of the features 1.1 to 1.26, wherein particles, preferably all particles, of the particles modifying the magnetic flux density (B(t)) have a spherical geometry. 1.28 First carrier material, in particular according to one of the features 1.1 to 1.27, the first support material has an optical access window thickness of less than 500 µm. 1.29 First carrier material, in particular according to one of the features 1.1 to 1.28, the first carrier material is thermally stable at temperatures up to 150°C. 1.30 First carrier material, in particular according to one of the features 1.1 to 1.29, the first support material is thermally stable at cold temperatures down to 10µK. 1.31 First carrier material, in particular according to one of the features 1.1 to 1.30, wherein the interaction of particles, preferably of all particles, the particles modifying the magnetic flux density (B(t)) with the sensor element (NV) is reversible and not permanent. 1.32 First carrier material, in particular according to one of the features 1.1 to 1.31, wherein the sensitivity of the sensor element (NV) with respect to the intensity (I) fl (t)) the fluorescence radiation (FL) emitted by the paramagnetic centers of the sensor element (NV) is specifically adjustable relative to the value of the magnetic flux density (B(t)) at the respective location of the paramagnetic centers due to the first support material by means of design and / or manufacturing and / or dimensioning and / or shaping and / or arrangement. 1.33 First carrier material, in particular according to one of the features 1.1 to 1.32, wherein the matrix material of the first support material is stable against moisture and where the matrix material of the first support material does not undergo any significant change in the magnetic properties of the matrix material of the first support material under high humidity. Features relating to a shielded sensor element (NV): 2.1 Shielded sensor element (NV) with reduced or modified sensitivity, wherein the sensor element (NV) has a second carrier material (TM2) and wherein a large number of magnetic field sensitive particles, in particular crystals, especially disordered ones, are embedded in the second support material (TM2) and wherein one or more or all of these magnetic field sensitive particles have paramagnetic centers and wherein paramagnetic centers of these paramagnetic centers are configured to, when irradiated with pump radiation (LB) with a pump radiation intensity other than 0W (I), pmp (t)) and a pump radiation wavelength (λ pmp ) a fluorescence radiation (λ fl ) with a time delay of fluorescence radiation (Δfl(t)), which can be 0s, and a fluorescence wavelength (λ fl ) and a fluorescence radiation intensity (I fl (t)) to emit and where the time delay of fluorescence radiation (Δfl(t)) and / or the fluorescence radiation intensity (I) fl (t)) depend on the value of the magnetic flux density B(t) at the location of the paramagnetic centers and wherein the sensor element (NV) comprises a first carrier material (TM1) according to one of features 1.1 to 1.33 and wherein the first carrier material (TM1) at least partially encloses the second carrier material (TM2). 2.2 Shielded sensor element (NV), in particular according to feature 2.1, the magnetic field sensitive particles comprise crystals. 2.3 Shielded sensor element (NV), in particular according to feature 2.1 or 2.2, the crystals include diamonds (DM). 2.4 Shielded sensor element (NV), in particular according to feature 2.3, wherein the paramagnetic centers include NV centers and / or ST1 centers and / or SiV centers and / or PbV centers and / or GeV centers, with NV centers being particularly suitable. 2.5 Shielded sensor element (NV), in particular according to feature 2.4, wherein the shielded sensor element is coupled to one or more optical functional means, in particular an optical fiber (OF), which are designed to - To transport pump radiation (LB) to the magnetic field sensitive particles of the sensor element (NV) and - to irradiate the magnetic field sensitive particles of the sensor element (NV) with pump radiation (NV) and - To detect the fluorescence radiation (FL) of the paramagnetic centers (NV) of the magnetic field-sensitive particles of the sensor element (NV) and - to transport the detected fluorescence radiation away from the sensor element (NV). Features relating to a multi-sensor element module (MSEM): 3.1. Multi-sensor element module (MSEM), wherein the multi-sensor element module (MSEM) comprises at least two sensor elements (NV), in particular according to one of features 2.1 to 2.5, a first sensor element (NV1) and a second sensor element (NV2). 3.2. Multi-sensor element module (MSEM), in particular according to feature 3.1, where the first sensitivity of the first intensity (I fl1(t)) of the first fluorescence radiation (FL1) of the first magnetic field sensitive particle of the first sensor element (NV1) compared to the value of the magnetic flux density (B(t)) at the location of the paramagnetic centers of the first magnetic field sensitive particle of the first sensor element (NV1) of the second sensitivity of the second intensity (I fl2 (t)) of the second fluorescence radiation (FL2) of the second magnetic field sensitive particle of the second sensor element (NV2) is different from the value of the magnetic flux density (B(t)) at the location of the paramagnetic centers of the second magnetic field sensitive particle of the second sensor element (NV2). 3.3. Multi-sensor element module (MSEM), in particular according to one of the features 3.1 to 3.2, wherein the first sensor element (NV1) and the second sensor element (NV2) are mechanically connected to each other to form a fixed multi-sensor element module (MSEM). 3.4. Multi-sensor element module (MSEM), in particular according to one of the features 3.1 to 3.3, where the first saturation value of the first sensitivity of the first sensor element (NV1) is the value of the magnitude of the first magnetic flux density (B(t)) at the location of the first sensor element (NV1) above which the value of this first magnetic flux density (B(t)) has no significant influence on the first intensity (I fl1 (t)) of the first fluorescence radiation (FL1) of the first crystals of the first sensor element (NV1) has more and where the second saturation value of the second sensitivity of the second sensor element (NV2) is the value of the magnitude of the second magnetic flux density (B(t)) at the location of the second sensor element (NV2) above which the value of this second magnetic flux density (B(t)) has no significant influence on the second intensity (I fl2(t)) of the second fluorescence radiation (FL2) of the second crystals of the second sensor element (NV1) has more and where the second saturation value is different from the first saturation value. Features relating to a device for detecting magnetic flux density (B ext (t))(Magnetic field sensor): 4.1 Device for detecting magnetic flux density (B ext (t)), wherein the device comprises a control and evaluation device (CTR) and wherein the device comprises at least one multi-sensor element module (MSEM), in particular according to one of features 3.1 to 3.4 and wherein the control and evaluation device (CTR) is configured to generate the one or more pump beams (LB1, LB2) for the at least two sensor elements (NV1, NV2) of the at least one multi-sensor element module (MSEM), and wherein the device comprises optical functional elements, in particular two or more optical fibers (LWL1, LWL2) which are configured to supply the one or more pump radiations (LB1, LB2) to the at least two sensor elements (NV1, NV2) of the at least one multi-sensor element module (MSEM) and to irradiate the at least two sensor elements (NV1, NV2) of the at least one multi-sensor element module (MSEM) with this one pump radiation or the several respective pump radiations (LB1, LB2) and wherein the device comprises optical functional elements, in particular two or more optical waveguides (OW1, OW2), which are configured to detect respective fluorescence radiations of the respective paramagnetic centers of the respective magnetic field sensitive particles, in particular the crystals, of the respective sensor elements (NV1, NV2) and to direct them to a respective photodetector (PD1, PD2) of the device and wherein the device comprises optical functional elements, in particular two or more dichroic mirrors (F11, F12) which are configured to - to enable the transmission of the respective fluorescence radiations (FL1, FL2) from the respective paramagnetic centers of the respective magnetic field-sensitive particles, in particular the respective crystals, of the respective sensor elements (NV1, NV2) to the respective photodetectors (PD1, PD2) and - to prevent the respective pump radiation (LB1, LB2) from being fed to the respective photodetectors (PD1, PD2) and - if necessary, to also prevent the supply of other radiation to the respective photodetectors (PD1, PD2), and wherein the respective photodetectors (PD1, PD2) are each configured to generate a respective receiver output signal (S01, S02) depending on the respective intensity (I fl1 (t), (Ifl2 (t)) to generate and wherein the control and evaluation device (CTR) is configured to evaluate the respective receiver output signals (S01, S02) and, depending on these receiver output signals (S01, S02), to generate one or more measured values, in particular for the magnetic flux density B to be detected ext (t), and / or one or more measured signal(s), in particular for the magnetic flux density to be measured (B) ext (t)) and / or control signals, in particular for one or more half-bridges (HB1, HB2, HB3). Features relating to an air gap sensor 5.1. Device for measuring magnetic flux density (B ext (t)) in a first air gap (ag1) and / or in the first stray field of the first air gap (ag1) of a disc rotor motor, wherein the disc rotor motor has a rotatable axis (AX) and wherein the device may in particular comprise a device according to feature 4.1 and wherein the disc rotor motor has at least one rotor disk (RS) that can be magnetized differently in sections and / or that is magnetized differently in sections and / or that is permanently magnetized differently in sections and wherein the rotor disk (RS) is attached to the axis (AX) in such a way and forms a connection at least temporarily such that the axis (AX) is perpendicular to the rotor disk (RS) and the rotor disk (RS) rotates with the axis (AX) during a rotation and the axis (AX) rotates with the rotor disk (RS) during a rotation and wherein the disc rotor motor has at least one first stator coil package (SSP1) which is flat on at least one side with a first surface and wherein the first stator coil package (SSP1) with this first surface forms the first air gap (ag1) between this first surface and a first surface of the rotor disk (RS) and wherein the assembly of rotor disk (RS) and axle (AX) is rotatably mounted relative to the first stator coil package (SSP1) and wherein the disc rotor motor comprises at least a first multi-sensor element module (MSEM1), in particular according to one of features 3.1 to 3.4 and wherein the multi-sensor element module (MSEM1) is located in the first air gap (ag1) and / or in the area of ​​influence of the magnetic flux density (B) ext (t)), which forms in the first air gap (ag1), and wherein the device is configured to determine one or more measured values, in particular for the magnetic flux density B to be detected, depending on fluorescence signals (Fl1, FL2, FL3) of the multi-sensor element module (MSEM1). ext(t), and / or one or more measured signal(s), in particular for the magnetic flux density to be measured (B) ext (t)) and / or control signals, in particular for one or more half-bridges (HB1, HB2, HB3). Features relating to a quantum sensor controlled disc rotor motor 6.1. Quantum sensor controlled disc rotor motor wherein the quantum sensor controlled disc rotor motor comprises a disc rotor motor, in particular according to feature 5.1, and wherein the quantum sensor controlled disc rotor motor at least a first device for detecting a first magnetic flux density (B ext (t)) in the first air gap (ag1) of the disc rotor motor, in particular according to feature 5.1 and wherein the control and evaluation device (CTR) of the first device for detecting a first magnetic flux density (B ext(t)) is set up in the first air gap (ag1) of the disc rotor motor to - to irradiate the respective first sensor elements (NV1, NV2) of the first multi-sensor element module (MSEM1) with one or more first pump radiations (LB1, LB2, LB3) and - to receive the respective first fluorescence radiations (FL1, FL2, FL3) of the respective first sensor elements (NV1, NV2) of the first multi-sensor element module (MSEM1) by means of the respective first photodetectors (PD1, PD2, PD3) and - to evaluate the respective first receiver output signals (S01, S02, S03) of these respective first photodetectors (PD1, PD2, PD3) assigned to the respective first sensor elements (NV1, NV2) of the first multi-sensor element module (MSEM1) and - to generate one or more first half-bridge control signals (HSL) depending on these first receiver output signals (S01, S02, S03) and where these one or more first half-bridge control signals (HSL) control the first electronic switches (T HU , T LU , T HV , T LV , T HW , T LW ) control one or more first half-bridges (HB1, HB2, HB3) and wherein these one or more first half-bridges (HB1, HB2, HB3) are connected via the respective first motor phases (motor connection lines) (MPH) U , MPH V , MPH W ) the first stator coils (SL1, SL2, SI3) of the first stator coil package (SSP1) of the disc rotor motor with their respective first electrical currents (I U , I V , I W ) depending on the one or more first half-bridge control signals (HSL) and thus depending on the first receiver output signals (S01, S02, S03) and thus depending on the first intensities (I fl1 (t), I fl2 (t), I fl3(t)) of the first fluorescence radiations (Fl1, FL2, FL3) of the first sensor elements (NV1, NV2, NV3) of the first multi-sensor element module (MSEM1). 6.2. Quantum sensor controlled disc rotor motor, in particular according to feature 6.1 wherein the quantum sensor controlled disc rotor motor is configured to, depending on the determined temporal course of the amplitude value of the temporal value course of the intensity (I fl1 ,(t), I fl2 ,(t)) the fluorescence radiations (FL1, Fl2) the electrical current the first stator coils (SL1, SL2, SL3) of the first stator coil package (SSP1) of the disc rotor motor with respective electrical currents (I U , I V , I W) and to control the electrical current supply to one or more rotor coils of the disc rotor motor in the rotor disk (RS) by means of a half-bridge control, in particular by means of the control and evaluation device (CTR), in conjunction with one or more further half-bridges (HBZ). 6.3. Quantum sensor controlled disc rotor motor, in particular according to one of the features 6.1 to 6.2 where the disc rotor motor has n motor phases (MPH) U , MPH V , MPH W ) with n as a positive integer greater than 2 and wherein the device supplies each of these n motor phases with a corresponding motor phase current (I) MPHU , I MPHV , I MPHW ) powered by n motor phase currents using a corresponding half-bridge (HB1, HB2, HB3) and where the motor phase currents are at least periodic with a period T over time and where each of the motor phase currents (IMPHU , I MPHV , I MPHW ) a current angle (φ MPHU , φ MPHV , φ MPHW ) is assigned and where the motor phase currents are in the form of a sequence of motor phase currents (I MPHU , I MPHV , I MPHW ) can be ordered such that a preceding motor phase current differs in its respective current angle from the current angle of the following motor phase current by 2π / n, so that each motor phase current of the motor phase currents (I MPHU , I MPHV , I MPHW ) a motor phase current vector is assigned, the orientation of which corresponds to the current angle of the motor phase current and its length to the magnitude of the motor phase current. 12. Quantum sensor controlled disc rotor motor, in particular according to one of features 6.1 to 6.3, wherein the quantum sensor controlled disc rotor motor at least a second device for detecting a first magnetic flux density (B ext(t)) in a second air gap (ag2) of the disc rotor motor, in particular analogous to (according to) feature 5.1, and wherein the control and evaluation device (CTR) of the second device for detecting a second magnetic flux density (B ext (t)) in the second air gap (ag2) of the disc rotor motor is set up to - to irradiate the respective sensor elements (NV1, NV2) of the second multi-sensor element module (MSEM2) with one or more pump radiations (LB1, LB2, LB3) and - to receive the respective fluorescence radiations (FL1, FL2, FL3) of the respective sensor elements (NV1, NV2) of the second multi-sensor element module (MSEM2) by means of respective photodetectors (PD1, PD2, PD3) and - to evaluate the respective receiver output signals (S01, S02, S03) of these respective photodetectors (PD1, PD2, PD3) assigned to the respective sensor elements (NV1, NV2) of the second multi-sensor element module (MSEM2) and - to generate one or more second half-bridge control signals (HSL) depending on these second receiver output signals (S01, S02, S03) and wherein these one or more second half-bridge control signals (HSL) control the second electronic switches (T HU , T LU , T HV , T LV , T HW , T LW ) control one or more second half-bridges (HB1, HB2, HB3) and wherein these one or more second half-bridges (HB1, HB2, HB3) are connected via their respective second motor phases (motor connection lines) (MPH) U , MPH V , MPH W ) the second stator coils (SL1, SL2, SL3) of the second stator coil package (SSP2) of the disc rotor motor with respective second electrical currents (I U , I V , I W) depending on the one or more second half-bridge control signals (HSL) and thus depending on the second receiver output signals (S01, S02, S03) and thus depending on the second intensities (I fl1 (t), I fl2 (t), I fl3 (t)) to power the second fluorescence radiations (Fl1, FL2, FL3) of the second sensor elements (NV1, NV2, NV3) of the second multi-sensor element module (MSEM2). List of characters Fig. Figure 1 shows a schematically simplified, state-of-the-art system in accordance with documents WO 2024 041 703 A1 and DE 10 2022 005 094 A1. Fig. Figure 2 shows an optical fiber LWL with a shielded sensor element NV directly on the center MP of the core of the optical fiber LWL. Fig.Figure 3 shows an exemplary, schematic cross-section through the exemplary first end ELWL1 of a proposed optical fiber LWL with a shielded sensor element NV. Fig. Figure 4 shows a simplified schematic representation of the sensor element NV with the second carrier material TM2 and the optical fiber LWL, wherein the first carrier material TM1 surrounds the area of ​​the second carrier material TM2, and superimposed on this is a magnetic equivalent circuit diagram of magnetic resistors to illustrate the mode of action of the first carrier material TM1. Fig. Figure 5 schematically and simply shows the use of a multi-sensor element module MSEM with multiple sensor elements NV1, NV2, NV3. Fig. Figure 6 shows schematically and in a simplified form, and not to scale, the control and multi-sensor element module MSEM-controlled regulation of an axial disc rotor motor. Fig.Figure 7 shows the curve of the dependence of the measured magnetic flux density B. ext (t), which floods an isotropic sensor element NV with a multitude of disordered crystals with a multitude of paramagnetic centers and without a second support material, from the deviation ΔI fl (|B ext (t)|) of intensity I fl (|B ext (t)|) of the fluorescence radiation FL of the paramagnetic centers in the stochastically uniformly distributed differently oriented crystals of this sensor element NV of the maximum intensity I flmax (|B ext (t)|) this fluorescence radiation FL. Fig. Figure 8 shows two curves of the dependence of the measured magnetic flux density B. ext(t), which includes a first isotropic sensor element NV1 and a second isotropic sensor element NV2, each of which is permeated by a respective plurality of disordered magnetic field-sensitive particles, in particular crystals, with a plurality of paramagnetic centers and with different second support materials (TM21, TM22), from the respective deviations ΔI fl1 (|B ext (t)|), ΔI fl2 (|B ext (t)|) of the respective intensities I fl1 (|B ext (t)|) and I fl2 (|B ext (t)|) of the respective fluorescence radiations FL1 and FL2 of the respective paramagnetic centers in the stochastically uniformly distributed differently oriented crystals of these sensor elements NV1, NV2 of the respective maximum intensity I flmax (|B ext (t)|) these respective fluorescence radiations FL1, FL2. The Fig. 9 corresponds to the Fig. 8, where the maximum deviation ΔI flmax (|B ext(t)|) of the respective intensity (I fl1 (|B ext (t)|), I fl2 (|B ext (t)|)) of the respective fluorescence radiations (FL1, FL2) of the respective paramagnetic centers of the respective sensor element (NV1, NV2) is subtracted from the x-axis values ​​as an offset value for both sensor elements (NV1, NV2). Fig. 10 corresponds to the Fig. 9, where the X-values ​​of the X-axis are now the logarithmized X-values ​​of the X-axis of the Fig. 9 can be used. Fig. 11 corresponds to the Fig. 10. Now, however, different areas are marked. Fig. 12 corresponds to the Fig. 11, where bold now indicates which curve, for example, for which range of the magnitude of the external magnetic flux density |B ext (t)|depending on the combination of the two measured fluorescence intensities I fl1 (|B ext (t)|) and I fl2 (|B ext(t)|) of the first sensor element NV1 and the second sensor element NV2 for determining the measured value of the magnitude of the external magnetic flux density |B ext (t)| is selected. Fig. 13 corresponds to the Fig. Figure 10 shows the curves of four example sensor elements NV1, NV2, NV3, and NV4. As can easily be seen, 400 mT can now be detected. Fig. Figure 14 shows another example of the use of this sensor principle by applying first carrier materials TM11 and TM12 to change and in particular to reduce the sensitivity of the sensor elements NV1, NV2 with paramagnetic centers NVZ1, NVZ2. Description of the characters

[0112] The figures illustrate the proposal schematically and in a simplified manner. The disclosure of the text presented here is not limited to the figures and also includes other combinations. Figure 1

[0113] Fig.Figure 1 shows a schematically simplified representation of a prior art system in accordance with documents WO 2024 041 703 A1 and DE 10 2022 005 094 A1. Fig. 1 was already described in detail in the preceding section “State of the Art”. Figure 2

[0114] The Fig. Figure 2 shows an optical fiber LWL with a sensor element NV directly on the center MP of the core of the optical fiber LWL. On part of the end face EF of the optical fiber LWL, the sensor element is designed as an optical fiber lens LWLL. The optical fiber LWL used is preferably one such as that described, for example, in the publications DE 102022 122 505 A1, DE 10 2022 004 475 A1, WO 2024 041 703 A1, DE 10 2023 122 667 A1, DE 10 2023 122 657 A1, DE 10 2023 122 656 A1, DE 10 2022 121 444 A1, and DE 10 2022 005 094 A1. For information on the manufacture and known uses of such an optical waveguide, please refer to these publications.

[0115] The optical fiber LWL presented here comprises the sensor element (NV) with a second substrate material TM2 in which the magnetic field-sensitive particles with paramagnetic centers, typically diamond crystals DM with NV centers NVZ, are embedded in a disordered manner and preferably with a statistically uniform distribution of different orientations. Regarding the properties of the second substrate material TM2, this document refers to the previously mentioned documents. When this document refers to diamond DM, knowledgeable persons should understand this to mean magnetic field-sensitive particles as alternative embodiments. When this document refers to NV centers NVZ, knowledgeable persons should understand this to mean other paramagnetic centers NVZ, particularly those in other crystals and / or particles, as alternative embodiments.

[0116] Through the self-adjusting process described in the above documents, an optical fiber lens LWLL is formed on the end surface EF of the optical fiber LWL in the area of ​​the midpoint MP of the optical fiber LWL above the optical fiber core LWLC.

[0117] In contrast to the technical instructions in the previously mentioned documents, the second support material TM2 is now encased in a first support material TM1, which contains the particles that modify the magnetic flux density B(t) in the now inner second support material TM2. The sensor element NV and the shape of the first support material TM1 now form a magnetic circuit. The particles that modify the magnetic flux density B(t) in the now inner second support material TM2 are encoded by the external magnetic field B. ext (t) magnetized and conduct a first part of the external magnetic excitation H ext (t) which is caused by the external magnetic flux density Bext (t) is generated around the sensor element NV, such that the remaining second part of the magnetic excitation H(t), which penetrates the sensor element NV and thus imbues it with the magnetic flux density B(t), is smaller or at least different than it would be without the first support material TM1. Therefore, the use of a first support material TM1 enclosing the sensor element (NV) with particles modifying the magnetic flux density B(t) in the now internal second support material TM2 represents a solution for modifying the sensitivity and extending the measuring range of the sensor elements NV. Exemplary parameters for adjusting the extent of the modification of the magnetic flux density B(t) in the sensor element NV include... • the number of layers of the first carrier material TM1, • the thickness of these layers of the first carrier material TM1, • the respective densities of the particles modifying the magnetic flux density B(t) in the respective layers of the first support material TM1, • the design and shape (round, angular, elongated, elliptical, etc.) of the particles modifying the magnetic flux density B(t) in the respective layers of the first support material TM1, • the material (e.g. chemical composition, crystallization form, possibly amorphous structure, mono- / polycrystalline, homogeneity, isotropy, preferred orientation vs. isotopic different orientation, etc.) of the particles modifying the magnetic flux density B(t) in the respective layers of the first support material TM1, • the shape of the first support material TM1 (e.g. the length L1 of the sheath of the end of the optical fiber LWL),

[0118] This list does not claim to be exhaustive; other methods and procedures for achieving the functionally equivalent purpose, such as the use of particles modifying the magnetic flux density B(t) with an internal layer structure and / or with quantum dots and / or paramagnetic centers and / or crystal defects etc. in the first support material TM1, are also conceivable. Figure 3

[0119] Fig.Figure 3 shows an exemplary, schematic cross-section through the exemplary first end ELWL1 of a proposed optical fiber LWL. The exemplary optical fiber LWL has an optical core LWLC. The optical fiber LWL can be a single-mode or a multi-mode optical fiber. The optical fiber can be a graded optical fiber, a step-index optical fiber, or the like, in which the optical core transitions smoothly into the outer surface of the optical fiber LWL with respect to the refractive index. Optical fiber LWLs that were simply a round glass rod or a thin Plexiglas rod have also been used.It is conceivable that the optical waveguide is an optically transparent injection-molded part or another optically transparent device component formed by other manufacturing methods, which is adapted, for example, to the specific requirements of placing the first optical waveguide end ELWL1 in an air gap (ag1, ag2) of a disc rotor motor or to its use in the respective application and reliably transports the fluorescence radiation FL and the pump radiation LB. The material of such an optically transparent device component must therefore be suitable for electromagnetic radiation of the pump radiation wavelength λ, at least along the optical path for the pump radiation LB. pmp The pump radiation LB must be transparent. Similarly, the material of such an optically transparent device component must therefore be transparent, at least along the optical path for the fluorescence radiation FL, for electromagnetic radiation of the fluorescence radiation wavelength λ. flThe fluorescence radiation FL must be transparent. The mechanical shell MH protects in this example the Fig. 3. The optical fiber LWL is enclosed, preferably leaving the first end ELWL1 of the optical fiber LWL exposed. This protection can be purely mechanical, but preferably also includes protection against external light sources. The second carrier material TM2 of the sensor element NV surrounds the first end ELWL1 of the optical fiber LWL. The second carrier material TM2 of the optical fiber LWL is preferably also transparent to electromagnetic radiation with the pump radiation wavelength λ. pmp and for electromagnetic radiation with the fluorescence wavelength λ flThe transparency here refers to the dimensions of the optical waveguide, which can have a diameter of less than 100 µm. The end face EF of the optical waveguide LWL is preferably perpendicular to the optical axis of the optical waveguide LWL, which is shown here as the center line ML. At the point where the optical axis intersects the end face EF, i.e., the center line ML, a waveguide lens LWLL is manufactured in the second substrate TM2 as a thickening of the second substrate TM2. The thickness d there is l The second carrier material TM2 is typically thickest. In the remaining areas of the sensor element NV, the optical fiber LWL may only be thin with a smaller thickness d. r coated with the second carrier material TM2. The thickness d r It can also be 0m. The diameter D LWLL The optical fiber lens LWLL is typically smaller than the diameter D. LWLof the optical fiber LWL. For clarity, the end of the optical fiber with the end face EF and the optical fiber lens LWLL is shown enlarged again on the left.

[0120] As an example of particles modifying the magnetic flux density B(t), diamonds DM with NV centers NVZ in the material of the second support material TM2 are shown here, without disclosing the Fig. 3. thereby restricting the use to such diamonds DM as particles modifying the magnetic flux density B(t) and such NV centers NVZ as paramagnetic centers. The disclosure of the Fig. 3 therefore explicitly includes as a possibility the use of other crystals and / or particles as particles modifying the magnetic flux density B(t) and also the possibility of using other paramagnetic centers instead of NV centers in the particles modifying the magnetic flux density B(t).

[0121] The small, stochastically uniformly distributed and preferably isotropically differently oriented diamonds DM in the matrix material MM2 of the second support material TM2 are indicated for clarity. Preferably, the diamonds DM are nanodiamonds with a size of less than 10 µm, better less than 5 µm, better less than 2 µm, better less than 1 µm, better less than 0.5 µm, better less than 0.2 µm, better less than 0.1 µm, less than 50 nm, less than 20 nm, less than 10 nm. Sizes above 100 nm are particularly preferred, since sizes smaller than 100 nm can cause special surface effects between the nanodiamond center (NVZ) and the respective diamond surface of the diamond DM in question. Preferably, a plurality of these diamonds DM comprise one or more NV centers NVZ, which then, when irradiated with pump radiation LB, generate the fluorescence radiation FL as a function of the magnetic flux density B(t) at the location of the respective paramagnetic center (in particular the NV center NVZ).Preferably, a large number of these diamonds DM include one or more NV centers NVZ, which then generate the fluorescence radiation FL.

[0122] In contrast to the state of the art, the second carrier material TM2 in the example of the Fig. 3 is now encased with the first carrier material TM1. The first carrier material TM1 preferably leaves only one opening OF1 open, through which the optical fiber LWL is guided. In the example of the Fig. 3 a first thickness D TM1,1 on the surface of the optical fiber LWL and a second thickness D TM1,1The first end of the optical fiber LWL is located in the first matrix material MM1 of the first carrier material TM1. The particles AP, which modify the magnetic flux density B(T), are embedded in this matrix material. Since the first carrier material TM1 has a first opening OF1, the matrix material MM1 of the first carrier material can be optically opaque. This has the advantage that ambient light cannot illuminate the sensor element NV and cannot penetrate the optical fiber. Preferably, the gap LK between the second carrier material TM2 and a preferably light-tight encapsulation of the optical fiber LWL (here, the mechanical encapsulation MH) is as small as possible. Ideally, the preferably light-tight encapsulation of the optical fiber LWL (here, the mechanical encapsulation MH) and the first matrix material MM1 of the first carrier material TM1 overlap so that no ambient light can penetrate the system. Figure 4

[0123] Fig.Figure 4 schematically simplifies the sensor element NV with the second carrier material TM2 and the optical fiber LWL, wherein the first carrier material TM1 encloses the area of ​​the second carrier material TM2, and a magnetic equivalent circuit of magnetic resistors is superimposed to illustrate the function of the first carrier material TM1. The optical fiber LWL is protected from ambient light in the lower area by the mechanical sheath MH, which preferably has no influence on a magnetic field.

[0124] A simplified diagram of the sensor element NV with the second carrier material TM2 and the optical fiber LWL is superimposed on a circuit diagram of a magnetic circuit, which is connected to the external magnetic excitation H ext (t), which is the external magnetic flux density B ext(t) originates, is excited. The magnetic resistances of the subsections of the second support material TM2 are filled and, as a result of the particles modifying the magnetic flux density B(t) in the second support material TM2, are intended to each have a particularly low value. The other magnetic resistances are filled with white and, in contrast, are intended to have higher magnetic resistance values. This shifts the magnetic excitation H essentially into the second support material TM2 as the magnetic excitation H TM2 (t) in the second support material TM2. (This is indicated by thicker arrows.) This weakens the other magnetic excitations in the vicinity of the second support material TM2. In particular, the magnetic excitation H(t) in the first support material TM1 is reduced. (This is indicated by smaller arrows.) Figure 5

[0125] Fig.Figure 5 schematically and simply illustrates the use of a multi-sensor element module (MSEM). A multi-sensor element module, as defined in this document, comprises at least two sensor elements (NV). From this point onward, this document assumes that the respective second carrier materials (TM2) are part of the respective sensor elements (NV), even if they are in Fig. 3 and Fig. 4 were drawn separately. This is to simplify the following text.

[0126] Fig. Figure 5 shows several sensor elements (NV1, NV2, NV3) that each comprise paramagnetic centers (NVZ1, NVZ2, NVZ3). The respective first support materials (TM11, TM12, TM13) modify the external magnetic flux density B. ext(t) to the respective magnetic flux density (B1(t), B2(t), B3(t)) flowing through the respective sensor element (NV1, NV2, NV3). A respective optical waveguide (WL1, WL2, WL3) transports the respective pump radiation (LB1, LB2, LB3) to the respective sensor element (NV1, NV2, NV3) and irradiates the respective sensor element (NV1, NV2, NV3) with its respective paramagnetic centers (NVZ1, NVZ2, NVZ3) with the respective pump radiation (LB1, LB2, LB3). The respective paramagnetic centers (NVZ1, NVZ2, NVZ3) then emit respective fluorescence radiation (FL1, FL2, FL3) with their respective fluorescence intensity (I). fl1 (t), I fl2 (t), I fl3(t)) then depends on the respective magnetic flux density (B1(t), B2(t), B3(t)) at the respective location of the respective paramagnetic center (NVZ1, NVZ2, NVZ3). The respective paramagnetic centers (NVZ1, NVZ2, NVZ3) feed their respective fluorescence radiation (FL1, FL2, FL3) at least partially into their respective associated optical waveguides (LWL1, LWL2, LWL3).

[0127] The control device STR causes the pump radiation source LED (preferably a green LED or a green laser) to emit the pump radiation (LB1&LB2&LB3) with the pump radiation wavelength λ. pmp and the pump radiation intensity I pmp (t) into an optical system.

[0128] A first, for example, semi-transparent mirror SM1 splits off the first pump radiation LB1 and an excess portion. A second semi-transparent mirror SM1b splits off the excess portion of the pump radiation and transmits the first pump radiation LB1 to a first dichroic mirror F11. The first dichroic mirror F11 transmits the first pump radiation LB1, which is fed into the first optical fiber LWL1. The optical system of the Fig. Figure 5 is a simplified drawing. For the further development of the technical teaching presented here, a qualified person should use an optical simulation program and optimize or supplement the beam path with additional optical functional elements such as mirrors and lenses.

[0129] The first dichroic mirror F11 reflects the first fluorescence radiation FL1 returning from the first sensor element (NV1) via the first optical fiber LWL1 out of the beam path onto the first photodetector PD1.

[0130] The first semi-transparent mirror SM1 typically transmits approximately half of the light power of the pump radiation (LB1&LB2&LB3) as pump radiation (LB2&LB3) to a second semi-transparent mirror SM2. The second semi-transparent mirror SM2 reflects approximately half of the light power of the pump radiation (LB2&LB3) as second pump radiation LB2 towards the second dichroic mirror F12. The second dichroic mirror F12 transmits the second pump radiation LB2 towards the second sensor element NV2, where the second pump radiation LB2 is fed into the second optical fiber LWL2. The optical system of the Fig.Figure 5 is a simplified drawing. For the further development of the technical teaching presented here, a qualified person should use an optical simulation program and optimize or supplement the beam path with additional optical functional elements such as mirrors and lenses.

[0131] The second dichroic mirror F12 reflects the second fluorescence radiation FL2 returning from the second sensor element NV2 via the second optical fiber LWL2 out of the beam path onto the second photodetector PD2.

[0132] The second semi-transparent mirror SM2 transmits approximately half of the light power of the pump radiation (LB2&LB3) as a third pump radiation LB3 towards the third dichroic mirror F13, whereby the beam path of the third pump radiation is deflected by a third mirror M3. The third dichroic mirror F13 transmits the third pump radiation LB3 towards the third sensor element NV3, where the third pump radiation LB3 is fed into the third optical fiber LWL3. The optical system of Fig. Figure 5 is a simplified drawing. For the further development of the technical teaching presented here, a qualified person should use an optical simulation program and optimize or supplement the beam path with additional optical functional elements such as mirrors and lenses.

[0133] The third dichroic mirror F13 reflects the third fluorescence radiation FL3 returning from the third sensor element NV3 via the third optical fiber LWL3 out of the beam path onto the third photodetector PD3.

[0134] The first photodetector PD1 generates from the received first fluorescence intensity I fl1 (t) a first receiver output signal. The second photodetector PD2 generates from the received second fluorescence intensity I fl2 (t) a second receiver output signal. The third photodetector PD3 generates a fluorescence intensity I from the received third fluorescence intensity. fl3 (t) a third receiver output signal.

[0135] The STR control unit of the CTR evaluation and control device evaluates the first receiver output signal, the second receiver output signal, and the third receiver output signal and determines a measured value for the external magnetic flux density B from this. ext(t) to which the sensor elements (NV1, NV2, NV3) are exposed.

[0136] Preferred are, given the same external magnetic flux density B ext (t), to which the sensor elements (NV1, NV2, NV3) are exposed, the respective internal magnetic flux densities (NVZ), to which the respective one or more paramagnetic centers (NVZ1, NVZ2, NVZ3) of the respective sensor elements (NV1, NV2, NV3) are exposed, differ from each other, since the respective second carrier materials (TM11, TM12, TM13) of the respective sensor elements (NV1, NV2, NV3) are designed differently from each other.

[0137] The CTR control and evaluation device of the Fig. Figure 5 represents only one example with three exemplary sensor element channels for the three exemplary sensor elements (NV1, NV2, NV3). In the example of the Fig.3. The pump radiation from the pump radiation source LED is distributed to the sensor elements (NV1, NV2, NV3) using an optical system as an example. It is conceivable to implement this distribution differently and / or to provide separate pump radiation sources (e.g., LED1, LED2, LED3) for the different sensor elements (NV1, NV2, NV3). In this case, the first pump radiation source LED1 would supply the first pump radiation LB1 for the first sensor element NV1, the second pump radiation source LED2 would supply the second pump radiation LB2 for the second sensor element NV2, and the third pump radiation source LED3 would supply the third pump radiation LB3 for the third sensor element NV3.

[0138] The three optical fibers (LWL1, LWL2, LWL3) shown here form an optical fiber system (LWLS), which represents an optical system with functional components. This system transports the pump radiation (LB1, LB2, LB3) to the sensor elements (NV1, NV2, NV3) and returns the respective fluorescence radiation (FI1, FL2, FL2). Therefore, the optical fibers (LWL1, LWL2, LWL3) are merely representative of their function. If more sensor elements than the three shown here (NV1, NV2, NV3) are used, additional optical fibers or functionally equivalent devices would be necessary. Figure 6

[0139] Fig.Figure 6 shows a schematic and simplified, not to scale, axial disc rotor motor. The axial disc rotor motor comprises the rotatably mounted motor shaft AX and the rotor disk RS attached to the rotatably mounted motor shaft AX. The rotor disk RS can be permanently magnetized and / or magnetizable and / or magnetizable by means of electrical coils inside the rotor disk.

[0140] Preferably, the magnetization of the rotor disk RS is divided into n magnetization segments, each preferably having an equally sized sector area. The rotor disk is preferably round, with the axis of this roundness preferably coinciding with the motor axis AX. The magnetization of the rotor disk RS is preferably selected such that the magnetic flux density exits the surface of the rotor disk RS perpendicular to the surface of the rotor disk RS and thus parallel to the motor axis AX. (Hence the name axial motor). Preferably, the first surface of the rotor disk RS forms a first air gap ag1 with a surface of the first stator coil pack SSP, which preferably has the same, preferably minimal, air gap width over the entire air gap area of ​​the first air gap ag1.Preferably, the second, opposite surface of the rotor disk RS forms a second air gap ag2 with a surface of the second stator coil pack SSP2, which preferably has the same, preferably minimal, air gap width over the entire air gap area of ​​the second air gap ag2. The stator coil packs (SSP1, SSP2) are not attached to the motor shaft AX.

[0141] A first multi-sensor element module MSEM1, as previously described as an example, is shown in the example of the Fig. 6 in the first air gap ag1. The sensor elements (not shown) of the first multi-sensor element module MSEM1 are optically controlled and read out by the control and evaluation device CTR by means of a first optical system, in particular a first optical waveguide system LWLS1.

[0142] A second multi-sensor element module MSEM2, as previously described as an example, is used in the example of the Fig. 6 in the second air gap ag2. The sensor elements (not shown) of the second multi-sensor element module MSEM2 are optically controlled and read out by the control and evaluation device CTR by means of a second optical system, in particular a second optical fiber system LWLS2.

[0143] The first carrier materials TM11 of the respective sensor elements of the first multi-sensor element module MSEM1 are preferably different from one another. This allows the control and evaluation device CTR to determine the magnetic flux density B. ext (t) in the first air gap ag1 e.g. by means of a computer and / or machine-implemented artificial intelligence method or another computer and / or machine-implemented method.

[0144] The first carrier materials TM12 of the respective sensor elements of the second multi-sensor element module MSEM2 are preferably also different from one another. This allows the control and evaluation device CTR to determine the magnetic flux density B. ext (t) in the second air gap ag2 e.g. by means of a computer and / or machine-implemented artificial intelligence method or another computer and / or machine-implemented method.

[0145] The control and evaluation device CTR can then be used depending on the flux densities B determined in this way. ext (t) generate the half-bridge control signals HLB for controlling the half-bridges (HB1, HB2, HB3). The half-bridge control signals HLB then control the electronic switches (T HU , T LU , T HV , T LV , T HW , T LW ) of the half-bridges (HB1, HB2, HB3). The first half-bridge HB1 comprises a high-side transistor T. HUThe first half-bridge HB1 comprises a low-side transistor T. LU The second half-bridge HB2 includes a high-side transistor T. HV The second half-bridge HB2 includes a low-side transistor T. LV The third half-bridge HB3 includes a high-side transistor T. HW The third half-bridge HB3 includes a low-side transistor T. LW .

[0146] For energy-efficient control, fast and very precise switching of the transistors (T) is required. HU , T LU , T HV , T LV , T HW , T LW) necessary. High-frequency control (e.g., in the range of 100 kHz to >500 kHz) of the stator coils in the stator coil packages (SSP1, SSP2) with GaN half-bridge output stages (HB1, HB2, HB3) offers a whole range of technical advantages compared to classic low-frequency control (e.g., 8-20 kHz) - especially in conjunction with the advantageous properties of GaN transistors.

[0147] At higher PWM frequencies, the current ripple amplitude in the phase currents decreases. This corresponds to lower current ripple. The more uniform magnetic field enables more efficient motor operation.

[0148] Lower current ripple resulting from higher switching frequencies translates to smoother torque delivery. This enables more precise torque control, which is particularly important in precision applications (robotics, aerospace, audio drives).

[0149] High-frequency PWM shifts the switching noise into the inaudible range (above 20 kHz). Furthermore, due to the inertia of motor components, motor vibrations and noise are generally lower, which is important for NVH-optimized applications (e.g., electric cars, household appliances).

[0150] Higher frequencies allow the use of smaller inductors and capacitors for external circuitry on axial disc rotor motors. Such smaller passive components generally allow for a more compact circuit design.

[0151] The current control loop can react faster due to the higher switching frequency, which is advantageous for field-oriented control (FOC) or dynamic load changes. The higher frequency thus enables faster current control (current loop). However, this requires fast sensors. Paramagnetic centers operate quickly and have high cutoff frequencies. For example, the cutoff frequency for NV centers to respond to intensity modulation of the time-dependent pump radiation intensity profile Ip is [missing information]. pmp (t) at 1MHz.

[0152] GaN allows for clean switching despite high frequencies, which often improves the EMC performance of an axial disc rotor motor controlled in this way, provided the layout is well designed. This results in better EMC performance due to steeper edge control.

[0153] GaN transistors require very little dead time, meaning the transition between commutation phases is cleaner than with other, slower transistors. This results in lower power losses. The few, short dead times thus enable more efficient commutation.

[0154] The subsequent use of high-frequency PWM signals as half-bridge control signals (HSL) allows for a finer reconstruction of rotor position and speed.

[0155] It is conceivable to combine the detection of the magnetic flux density in the air gaps ag1, ag2 of the axial disc rotor motor with a measurement of the electrical motor phase currents (I MPHU , I MPHV , I MPHW ) and the motor phase voltages (V MPHU , V MPHV , V MPHW) to combine and to enable the control and evaluation device CTR to control the generation of the half-bridge control signals HLB by means of computer- and / or machine-implemented methods and / or algorithms. Preferably, the transistors (T HU , T LUP T HV , T LV , T HW , T LW ) the half-bridges (HB1, HB2, HB3) around fast wide-bandgap transistors made of materials such as diamond or GaN or the like.

[0156] Fast actuators, such as those with GaN transistors (T HU , T LU , T HV , T LV , T HW , T LW The half-bridges (HB1, HB2, HB3) equipped with these transistors require a fast control and evaluation device (CTR) and, in addition, fast sensor elements (NV1, NV2, NV3). To operate these GaN transistors (T HU , T LU , T HV , T LV , T HW , T LWTo enable very fast switching of the half-bridges (HB1, HB2, HB3), the sensors must also react very quickly with short dead times. Conventional Hall-effect plate-based systems are too slow for this. Measurement directly in the air gap is not possible, which is why a correction is necessary.

[0157] The document presented here therefore proposes to adjust the respective intensity modulations of the respective pump radiation intensities (I pmp1 (t), I pmp2 (t), I pmp3 (t)) of the respective different pump radiations (LB1, LB2, LB3) for the respective sensor elements (NV1, NV2, NV3) of the respective multi-sensor element modules (MSEM1, MSEM2) are to be operated with a maximum modulation frequency of half the cutoff frequency of the respective paramagnetic centers. In the case of NV centers, the modulation frequency of the intensity modulation of the respective pump radiation intensities (I) is to be pmp1 (t), I pmp2 (t), Ipmp3 (t)) of the respective different pump radiations (LB1, LB2, LB3) are therefore preferably between 400 kHz and 500 kHz (if possible, even higher). Preferably, the evaluation and control device CTR is designed to control the respective intensity modulations of the respective pump radiation intensities (I pmp1 (t), I pmp2 (t), I pmp3(t)) of the respective different pump radiations (LB1, LB2, LB3) for the respective sensor elements (NV1, NV2, NV3) of the respective multi-sensor element modules MSEM1, MSEM2 with an intensity modulation frequency of more than 100kHz, better than more than 200kHz, better than more than 400kHz, even better than more than 600kHz. The correlators of the evaluation and control device CTR, or the computer- and / or machine-implemented correlation methods that the evaluation and control device CTR executes, are preferably designed to correlate the respective fluorescence signals (FI1, FL2, FL3) of the respective paramagnetic centers (NVZ1, NVZ2, NVZ3) of the respective sensor elements (NV1, NV2, NV3) of the respective multi-sensor element modules (MSEM1, MSEM2) with the respective fluorescence frequencies of the respective intensity modulations (I). fl1 (t), I fl2 (t), I fl3(t)) To process fluorescence signals (FI1, FL2, FL3) of the respective paramagnetic centers (NVZ1, NVZ2, NVZ3) of the respective sensor elements (NV1, NV2, NV3) of the respective multi-sensor element modules MSEM1, MSEM2 in the range of these frequencies and to provide adapted half-bridge control signals HLB with short dead times. Figure 7

[0158] Fig. Figure 7 shows the curve of the dependence of the measured magnetic flux density B. ext (t), which floods an isotropic sensor element NV with a multitude of disordered crystals with a multitude of paramagnetic centers and without a second support material, from the deviation Δl fl (|B ext (t)|) of intensity I fl (|B ext (t)|) of the fluorescence radiation FL of the paramagnetic centers in the stochastically uniformly distributed differently oriented crystals of this sensor element NV of the maximum intensity I flmax (|B ext(t)|) of this fluorescence radiation FL. The curve was measured using a sensor element NV with a multitude of disordered diamond crystals as the crystals of the sensor element NV, where NV centers NVZ formed the paramagnetic centers. Due to the high density of NV centers used in the sensor element NV, an ambiguous region of the deviation ΔI arises. fl (|B ext (t)|) of the fluorescence intensity I fl (|B ext (t)|) in the region of low magnetic flux densities B ext (t) in the respective air gap (ag1, ag2), in which each value of the deviation ΔI fl (|B ext (t)|) of the fluorescence intensity I fl (|B ext (t)|) two possible values ​​of the magnitude of the magnetic flux density B ext (t) are assigned. This area is the second fluorescence intensity range FB2. To its left is the first fluorescence intensity range FB1, in which each value of the deviation ΔI fl (|B ext(t)|) of the fluorescence intensity I fl (|B ext (t)|) exactly one possible value of the magnetic flux density B ext (t) is assigned. Values ​​of the deviation ΔI fl (|B ext (t)|) of the fluorescence intensity I fl (|B ext (t)|) in the first fluorescence intensity range FB1 are therefore suitable for measuring the magnetic flux density B ext (t) in an air gap (ag1, ag2). For very high magnetic flux densities, the curve converges, based on experience, to a maximum value of ΔI. flmax (|B ext (t)|) of the fluorescence intensity I fl (|B ext (t)|). Figure 8

[0159] Fig. Figure 8 shows two curves of the dependence of the measured magnetic flux density B. ext(t), which includes a first isotropic sensor element NV1 and a second isotropic sensor element NV2, each of which is permeated by a respective plurality of disordered magnetic field-sensitive particles, in particular crystals, with a plurality of paramagnetic centers and with different second support materials (TM21, TM22), from the respective deviations ΔI fl1 (|B ext (t)|), ΔI fl2 (|B ext (t)|) of the respective intensities I fl1 (|B ext (t)|) and I fl2 (|B ext (t)|) of the respective fluorescence radiations FL1 and FL2 of the respective paramagnetic centers in the stochastically uniformly distributed differently oriented crystals of these sensor elements NV1, NV2 of the respective maximum intensity I flmax (|B ext (t)|) these respective fluorescence radiations FL1, FL2.

[0160] In an exemplary air gap sensor for measuring the magnetic flux density B ext(t) In an air gap (ag1, ag2), two sensor elements, a first sensor element NV1 and a second sensor element NV2, are installed as an example. The air gap sensor is to be configured, for example, to measure the magnetic field B ext (t) in the air gap (ag1, ag2) of an axial disc rotor motor the first sensor element NV1 due to the first support material TM11 of the first sensor element NV1 with a first magnetic flux density B1(B ext (t)) flooded and the second sensor element NV2 due to the second support material TM12 of the second sensor element NV2 with a second magnetic flux density B2(B ext (t)) permeated, which is preferably different from the first magnetic flux density B1(B ext (t)). For example, the first magnetic flux density B1(B ext (t)), to which the first sensor element NV1 is exposed, in the example of the Fig. 8 greater than the second magnetic flux density B2(B ext(t)), to which the second sensor element NV2 is exposed. If one now considers the deviations (ΔI) resulting from the respective deviations fl1 (|B1(B ext (t))|)= (ΔI fl1 (|B ext (t)|), ΔI fl2 (|B2(B ext (t)) 1)= ΔI fl2 (|B ext (t)|)) of the respective intensity (I fl1 (|B ext (t)|), I fl2 (|B ext (t)|) of the respective fluorescence radiation (FL1, FL2) of the respective paramagnetic centers (NVZ) of the respective sensor element (NV1, NV2) of the respective maximum intensity value (I flmax1 (|B ext (t)|), I flmax2 (|B ext (t)|)) flux density values ​​for the external flux density B of the respective fluorescence radiation (FL1, FL2) of the respective paramagnetic centers (NVZ) of the respective sensor element (NV1, NV2) ext (t) depending on these respective deviations (ΔI fl1 (|B ext (t)|), ΔI fl2 (|B ext (t)|)) on, so one obtains the two in Fig. The curves shown in the diagram represent the first sensor element NV1 and the second sensor element NV2. The maximum deviation ΔI flmax (|B ext (t)|) of the respective intensity (I fl1 (|B ext (t)|), I fl2( |B ext (t)|)) of the respective fluorescence radiations (FL1, FL2) of the respective paramagnetic centers of the respective sensor element (NV1, NV2) is also the same for both sensor elements (NV1, NV2) if they are essentially the same, as is assumed here. Figure 9

[0161] The Fig. 9 corresponds to the Fig. 8, where the maximum deviation ΔI flmax (|B ext (t)|) of the respective intensity (I fl1 (|B ext (t)|), I fl2 (|B ext(t)|)) of the respective fluorescence radiations (FL1, FL2) of the respective paramagnetic centers of the respective sensor elements (NV1, NV2) is subtracted from the x-axis values ​​as an offset value for both sensor elements (NV1, NV2). Note that the value of the maximum deviation ΔI flmax (|B ext (t)|) in Fig. 8 is negative! Figure 10

[0162] Fig. 10 corresponds to the Fig. 9, where the X-values ​​of the X-axis are now the logarithmized X-values ​​of the X-axis of the Fig. 9 can be used. As is immediately noticeable, both curves exhibit a very linear respective curve segment. That is, the measurable value of the magnitude of the external magnetic flux density |B ext (t)| depends logarithmically on the fluorescence intensity I in this fluorescence intensity section. fl (|B ext(t)|) off. Thus, in this fluorescence intensity section, a reversal is possible and a value of the magnitude of the external magnetic flux density |B is obtained. ext (t)| can be derived from a fluorescence intensity value I fl (|B ext (t)|) can be uniquely determined there. More on that later. Figure 11

[0163] Fig. 11 corresponds to the Fig. 10. Now, however, different areas are marked.

[0164] In the second fluorescence intensity section FIB2, the curves are reversible, a value of the magnitude of the external magnetic flux density |B ext (t)|can be derived there from a fluorescence intensity value I fl (|B ext (t)|) can be uniquely determined. Therefore, a device with two sensor elements (NV1, NV2) can obtain two valid measurements for the magnitude of the external magnetic flux density |B. ext (t)| determine. The first valid measurement of the magnitude of the external magnetic flux density |B ext(t)| determines the system of the proposed air gap sensor from the first fluorescence intensity value of the first fluorescence intensity I fl1 (|B ext (t)|) of the first fluorescence radiation FL1 of the first sensor element NV1. The second valid measurement of the magnitude of the external magnetic flux density |B ext (t)| determines the system of the proposed air gap sensor from the second fluorescence intensity value of the second fluorescence intensity I fl2 (|B ext (t)|) of the second fluorescence radiation FL2 of the first sensor element NV2. Of course, determining one value is sufficient. However, it is conceivable to have n sensor elements NV1 to NV n to provide with a suitable optical coupling system with the control and evaluation device CTR and then in this first fluorescence intensity section FIB1 n valid measured values ​​of the magnitude of the external magnetic flux density |B ext(t)| to determine and then reduce to a usable measurement value using a statistical procedure.

[0165] The first curve, which is assigned to the first sensor element NV1, forms the first fluorescence intensity value of the first fluorescence intensity I. fl1 (|B ext (t)|) of the first fluorescence radiation FL1 of the first sensor element NV1, provided it lies in the first fluorescence intensity section FIB1, to a measured value of the magnitude of the external magnetic flux density |B ext (t)| ab, which in a first third region BB31 of the external magnetic flux density B ext (t) and thus in a corresponding first third region BB31 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the first sensor element NV1.

[0166] The second curve, which is assigned to the second sensor element NV2, forms the second fluorescence intensity value of the second fluorescence intensity I. fl2 (|B ext (t)|) of the second fluorescence radiation FL2 of the second sensor element NV2, provided it lies in the second fluorescence intensity section FIB2, to a measured value of the magnitude of the external magnetic flux density |B ext (t)| ab, which in a second third region BB32 of the external magnetic flux density B ext (t) and thus in a corresponding second third area BB32 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the second sensor element NV2.

[0167] As can be easily seen, in both curves, the value of the measurable value of the magnitude of the external magnetic flux density |B drops in the second fluorescence intensity section FIB2. ext (t)| more or less linearly with increasing value of the expression -In(-ΔIfl (|B ext (t)|)+ ΔI flmax (|B ext (t)|)) ab. This greatly simplifies the reversal in this second fluorescence intensity section FIB2.

[0168] The two curves differ only by a different proportionality constant (K1, K2) and a different offset (ΔI). flmax1 (|B ext (t)|), ΔI flmax2 (|B ext (t)|)) in this second fluorescence intensity section FIB2. These four calibration parameters (K1, K2, ΔI flmax1 (|B ext (t)|), Δl flmax2 (|B ext (t)|)) can be recorded and stored in a memory MEM of the computer system RSYS of the air gap sensor, preferably in a memory MEM of the control and evaluation device CTR or in its control device STR, together with the limit values ​​of the second fluorescence intensity section FIB2, i.e. the limit fluorescence intensity I flg (|B ext(t)|) at the transition from the first fluorescence intensity section FIB1 to the second fluorescence intensity section FIB2.

[0169] The curve of the magnitude of the external magnetic flux density |B ext (t)| depending on the fluorescence intensity I fl (|Bext(t)|) does not represent a function in the first fluorescence intensity section FIB1, since each X-value corresponds to two Y-values. Accordingly, the curve in this section has two subcurves, the upper of which increases with increasing fluorescence intensity I. fl ( |B ext (t)|) falls and the lower one with increasing value of the fluorescence intensity I fl (IB ext (t)|) increases.

[0170] The upper part of the first curve represents the first fluorescence intensity values ​​I fl1 (|B ext(t)|) of the first sensor element NV1, which lie in the first fluorescence intensity section FIB1, to a first second region BB21 of the external magnetic flux density B ext (t) and thus in a corresponding first second area BB21 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the first sensor element NV1.

[0171] The lower part of the first curve represents the first fluorescence intensity values ​​I fl1 (|B ext (t)|) of the first sensor element NV1, which lie in the first fluorescence intensity section FIB1, to a first first region BB11 of the external magnetic flux density B ext (t) and thus in a corresponding first area BB11 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the first sensor element NV1.

[0172] The upper part of the second curve represents the second fluorescence intensity values ​​Ifl2 (|B ext (t)|) of the second sensor element NV2, which lie in the first fluorescence intensity section FIB1, onto a second area BB22 of the external magnetic flux density B ext (t) and thus in a corresponding second area BB22 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the second sensor element NV2.

[0173] The lower part of the second curve represents the second fluorescence intensity value I. fl2 (|B ext (t)|) of the second sensor element NV2, which lie in the first fluorescence intensity section FIB1, to a second first region BB12 of the external magnetic flux density B ext (t) and thus in a corresponding second first region BB12 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the second sensor element NV2.

[0174] In the example of the Fig.11 the curve of the second sensor element NV2 is now designed such that the second first area BB12 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the second sensor element NV2 the first area BB11 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the first sensor element NV1 and the first second area BB21 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the first sensor element NV1. In the example of the Fig. 11 This is intentionally drawn in such a way that the second first area BB12 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the second sensor element NV2 the first area BB11 of the measured value of the magnitude of the external magnetic flux density |B ext(t)| for the first sensor element NV1 and the first second area BB21 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the first sensor element NV1 exactly encompasses. This has the advantage that the air gap sensor can be determined using the first fluorescence intensity value I. fl1 (|B ext (t)|) of the first sensor element NV1 can decide whether the value of the magnitude of the external magnetic flux density |B ext (t)| based on the second curve of the second sensor element NV2 in the second first region BB12 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the second sensor element NV2 or not.

[0175] The value of the magnitude of the external magnetic flux density |B is located ext (t)| with respect to the second curve of the second sensor element NV2 is NOT in the second first area BB12 of the measured value of the magnitude of the external magnetic flux density |Bext (t)| for the second sensor element NV2, the measured value of the magnitude of the external magnetic flux density |B must be ext (t)| in the first third region BB31 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the first sensor element NV1 and the air gap sensor determines the value of the magnitude of the external magnetic flux density |B ext(t)| for the first sensor element NV1 by means of the inverse operation described above using a computer- and / or machine-implemented polynomial-based method, the coefficients and program code of which are preferably stored in a memory MEM of the computer system of the air gap sensor. This computer system is preferably a device component of the control and evaluation device CTR, and particularly preferably its control device STR. Preferably, the control device STR comprises a computer core µC, which is coupled to the memory MEM via an internal data bus IDB. For example, the computer core µC of the computer system RSYS of the air gap sensor executes this program code and reads this data from the memory MEM and uses the memory MEM as a final and / or intermediate value memory.

[0176] The value of the magnitude of the external magnetic flux density |B is located ext(t)| with reference to the second curve of the second sensor element NV2, however, in the second first area BB12 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the second sensor element NV2, the measured value of the magnitude of the external magnetic flux density |B must be ext (t)| in the second first area BB12 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the second sensor element NV2 and the air gap sensor determines the value of the magnitude of the external magnetic flux density |B ext(t)| for the second sensor element NV2 by means of a computer- and / or machine-implemented polynomial-based method, the coefficients and program code of which are preferably stored in a memory MEM of the computer system RSYS of the air gap sensor. For example, the computer kernel µC of the computer system RSYS of the control device STR of the air gap sensor executes this program code and reads this data from the memory MEM and uses the memory MEM as a final and / or intermediate value memory.

[0177] The transition from the first area BB11 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the first sensor element NV1 to the first second area BB21 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the first sensor element NV1, the first reversal point B is marked. ext (t) 1u .

[0178] The transition from the second first area BB12 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the second sensor element NV2 to the second area BB22 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the second sensor element NV2, the second reversal point B is marked. ext (t) 2u .

[0179] The transition from the first second area BB21 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the first sensor element NV1 to the first third area BB31 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the first sensor element NV1, the first transition field value B is indicated. ext (t) 1ü .

[0180] The transition from the second area BB22 of the measured value of the magnitude of the external magnetic flux density |B ext(t)| for the second sensor element NV2 to the second third area BB32 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the second sensor element NV2, the second transition field value B is indicated. ext (t) 2ü .

[0181] Therefore, the first transition field value B is preferred. ext (t) 1ü in the second first area BB12 of the measured value of the magnitude of the external magnetic flux density |B ext (t)| for the second sensor element NV2. This allows the lower part of the second curve of the second fluorescence intensity values ​​I to be reversed. fl2 (|B ext (t)|) of the second sensor element NV2.

[0182] This is the essential proposed idea using the example of two sensor elements NV1, NV2 with different first carrier materials TM11 and TM12.

[0183] For the actual application, this document recommends the use of more than two sensor elements NV1, NV2, for example, the use of n sensor elements NV1 to NV n with n mutually different first carrier materials TM11 to TM1 n , where n is a positive integer greater than 1 Figure 12

[0184] Fig. 12 corresponds to the Fig. 11, where bold now indicates which curve, for example, for which range of the magnitude of the external magnetic flux density |B ext (t)| depending on the combination of the two measured fluorescence intensities I fl1l (|B ext (t)|) and I fl2 (|B ext (t)|) of the first sensor element NV1 and the second sensor element NV2 for determining the measured value of the magnitude of the external magnetic flux density |B ext(t)| is selected. Other selection methods are possible. For example, the first fluorescence intensity I can be selected. fl1 (|B ext (t)|) of the first sensor element NV1 can be used to decide in which range BB12, BB22 or BB23 the operating point is located on the curve of the second fluorescence intensity I fl2 (|B ext (t)|) of the second sensor element NV2. This results in the corresponding curve segment of the curve of the second fluorescence intensity I. fl2 (|B ext (t)|) of the second sensor element NV2 uniquely reversible and the magnitude of the external magnetic flux density |B ext (t)| can be derived from the second fluorescence intensity I fl2 (|B ext (t)|) of the second sensor element NV2 can be uniquely determined.

[0185] Preferably, however, the selection strategy can also be based on the precision of the measurement in the different curve regions of the different curves.

[0186] Preferably, the control and evaluation device CTR of the air gap sensor performs this selection and / or the determination of the measured value of the magnitude of the external magnetic flux density |B by means of the computer core µC of its control device STR. ext (t)| by means of computer- and / or machine-implemented methods and / or algorithms. These computer- and / or machine-implemented methods and / or algorithms may also include computer- and / or machine-implemented methods and / or algorithms of artificial intelligence and / or pattern recognition. For example, artificial, computer- and / or machine-implemented neural networks are suitable for this purpose, which the control and evaluation device CTR of the air gap sensor can execute using the computer core µC of its control device STR. Figure 13

[0187] Fig. 13 corresponds to the Fig.Figure 10 shows the curves of four example sensor elements NV1, NV2, NV3, and NV4. As can easily be seen, 400 mT can now be detected. Figure 14

[0188] Fig. Figure 14 shows another example of the use of this sensor principle by applying first carrier materials TM11 and TM12 to change and in particular to reduce the sensitivity of the sensor elements NV1, NV2 with paramagnetic centers NVZ1, NVZ2.

[0189] This is an exemplary proposed system of an exemplary current sensor that uses an electrical switch T2 to interrupt the current flow of the line current I. LTG The LTG line is optically controlled. This is therefore an example of an optical fuse.

[0190] The current sensor (between terminals A and B) also works without switch T2 and the control elements (fiber optic cable) associated with switch T2. s , LEDs , S6, SDRV) can be used, for example, as a battery sensor in vehicles. For example, the microcontroller (µC) of the RSYS computer system can control the LED via a switching LED driver SDRV. s to control the opening or closing of switch T2. The switching LED controlled in this way s For this purpose, a switching radiation SB is fed into an optical switching system, here for example a switching optical fiber LWL. s , depending on the measured fluorescence intensities I fl1 (t), I fl2 (t) one. The optical switching system, here for example the switching optical fiber LWL s, then illuminates the optical actuator of switch T2, here for example the light-sensitive switching sensor of a phototransistor T2, so that an overall safety function can result and the device can represent a purely optical safety device. The line LTG can be configured as a meandering loop MSL around the multi-sensor element module MSEM to enhance the interaction. (See Fig. 15.)

[0191] The current sensor system comprises multiple measurement channels with a multi-sensor element module MSEM. The multi-sensor element module MSEM preferably comprises at least one first isotropic sensor element NV1 with a disordered first plurality of first magnetic field-modifying particles, for example, first crystals with multiple first paramagnetic centers NVZ1 in a second support material TM2 and encased by a first support material TM11, and at least one second isotropic sensor element NV2 with a second disordered plurality of second magnetic field-modifying particles, for example, second crystals with multiple second paramagnetic centers NVZ2 in a second support material TM2 and encased by a second support material TM12.

[0192] The RSYS computer system of the STR control device controls the MSEM multi-sensor element module.

[0193] First measurement channel for the first sensor element NV1 of the multi-sensor element module MSEM. The computer system RSYS controls a first driver DRV1 of the first measurement channel via a digital-to-analog converter DAC, which supplies a first pump radiation source LED1 of the first measurement channel with electrical energy in a time-modulated manner using a first modulation signal, so that this emits a first pump radiation LB1 with a pump radiation wavelength λ. pmp emitted, with the first pump radiation LB1 typically also coinciding with the first modulation signal in its first pump radiation intensity I pmp1(t) is modulated. A first optical system, which is part of the optical waveguide system LWLS, transports the first pump radiation LB1 to the first sensor element NV1 of the multi-sensor element module MSEM. The first optical system can, for example, comprise a first optical waveguide LWL1 of the first measurement channel. The first optical system irradiates the first sensor element NV1 with the first pump radiation LB1. As a result, the first paramagnetic centers NVZ1 irradiated with the first pump radiation LB1 emit first fluorescence radiation FL1 as a function of the first magnetic flux density B1(t) at the location of the respective first paramagnetic center NV1, and thus essentially at the location of the first sensor element NV1, and possibly as a function of other physical parameters. The first support material TM11 thereby modifies the external magnetic flux density B ext(t) by means of the particles in the first carrier material TM11 that modify the magnetic flux density B(t) in the first carrier material T11 to this first magnetic flux density B1(t) at the location of these first paramagnetic centers NVZ1. The further physical parameters can, for example, include the first temperature ϑ1 of the first sensor element NV1. If these are also to be evaluated and / or compensated, further sensor elements in the multi-sensor element module MSEM and corresponding further measurement channels are necessary for each parameter. In this case, the evaluation of the measurement channels by means of a computer- and / or machine-implemented neural network model is suitable, the program code of which is then typically executed by the computer system RSYS of the current sensor, whereby the corresponding program code and the associated data are preferably stored in a memory MEM of the computer system RSYS.

[0194] A second optical system of the first measurement channel detects the emitted first fluorescence radiation FL1 of the first paramagnetic centers NV1 of the first sensor element NV1 in the multi-sensor element module MSEM. The first optical system can be identical to the second optical system, as shown here. However, it is also conceivable that the second optical system comprises another optical waveguide of the first measurement channel as part of the optical waveguide system LWLS or a functionally equivalent optical device. This is not shown here for the sake of simplicity, but is covered by the scope of the design.

[0195] The second optical system of the first measurement channel directs the first fluorescence radiation FL1 from the first paramagnetic centers NVZ1 of the first sensor element NV1 via a separator to a first photodetector PD1 of the first measurement channel. In the case of the Fig.14 The second optical system of the first measurement channel is identical to the first optical system of the first measurement channel and comprises, as a feedback means for the first fluorescence radiation FL1, the first optical waveguide LWL1 of the optical waveguide system LWLS, which is already used to guide the first pump radiation LB1. The first separation means ensures that essentially no first pump radiation LB1 reaches the first photodetector PD1 and that essentially a maximum of the first fluorescence radiation LB1 reaches the first photodetector PD1. In the example of the Fig. 14. The separator of the first measuring channel is a first dichroic mirror F11, which directs and / or transmits the first fluorescence radiation FL1 to the first photodetector PD1. The first photodetector PD1 converts the first time-dependent intensity profile of the first fluorescence intensity I. fl1(t) of the first sensor element NV1 is converted into a first receiver output signal S01. The multi-channel analog-to-digital converter ADC acquires the first receiver output signal S11, amplified by a first amplifier V11, and makes the sampled data of the first receiver output signal S01 available to the computer core µC and / or other device components of the computer system RSYS for evaluation and / or use by means of computer-implemented and / or machine-implemented methods and / or algorithms.

[0196] Second measurement channel for the second sensor element NV2 of the multi-sensor element module MSEM. The computer system RSYS controls a second driver DRV2 of the second measurement channel via a digital-to-analog converter DAC. This driver supplies a second pump radiation source LED2 of the second measurement channel with electrical energy, time-modulated by a second modulation signal, so that it emits a second pump radiation LB2 with a pump radiation wavelength λ. pmpemitted, with the second pump radiation LB2 typically also coinciding with the second modulation signal in its second pump radiation intensity I. pmp2(t) is modulated. A first optical system transports the second pump radiation LB2 to the second sensor element NV2 in the multi-sensor element module MSEM. The first optical system of the second measurement channel can, for example, include a second optical waveguide LWL2 of the second measurement channel as part of the optical waveguide system LWLS. The first optical system of the second measurement channel irradiates the second sensor element NV2 with the second pump radiation LB2. As a result, the second paramagnetic centers NV2 irradiated with the second pump radiation LB2 emit second fluorescence radiation FL2 as a function of the second magnetic flux density B2(t) at the location of the respective second paramagnetic center NVZ2, and thus essentially at the location of the second sensor element NV2, and possibly depending on other physical parameters. The second first support material TM12 modifies the external magnetic flux density B. ext(t) by means of the particles in the second first support material TM12, which modify the magnetic flux density B(t) in the second first support material T12, to this second magnetic flux density B2(t) at the location of these second paramagnetic centers NVZ2. The further physical parameters can, for example, include the second temperature ϑ2 of the second sensor element NV2. If these are also to be evaluated and / or compensated, further sensor elements in the multi-sensor element module MSEM and corresponding further measurement channels are necessary for each parameter. In this case, the evaluation of the measurement channels by means of a computer- and / or machine-implemented neural network model is suitable, the program code of which is then typically executed by the computer system RSYS of the current sensor, whereby the corresponding program code and the associated data are preferably stored in a memory MEM of the computer system RSYS.

[0197] A second optical system of the second measurement channel detects the emitted second fluorescence radiation FL2 of the second paramagnetic centers NVZ2 of the second sensor element NV2 in the multi-sensor element module MSEM. The first optical system of the second measurement channel can be identical to the second optical system of the second measurement channel, as shown here. However, it is also conceivable that the second optical system of the second measurement channel comprises another optical waveguide of the second measurement channel as part of the optical waveguide system LWLS or a functionally equivalent optical device. This is not shown here for the sake of simplicity, but is covered by the scope of the claim.

[0198] The second optical system of the second measurement channel directs the second fluorescence radiation FL2 from the second paramagnetic centers NV2 of the second sensor element NV2 via a separator to a second photodetector PD2 of the second measurement channel. In the case of the Fig.14 The second optical system of the second measurement channel is identical to the first optical system of the second measurement channel and comprises, as a feedback means for the second fluorescence radiation FL2, the second optical waveguide LWL2 of the optical waveguide system LWLS, which is already used to guide the second pump radiation LB2. The second separation means ensures that essentially no second pump radiation LB2 reaches the second photodetector PD2 and that essentially a maximum of the second fluorescence radiation LB2 reaches the second photodetector PD2. In the example of the Fig. 14. The separator of the second measuring channel is a second dichroic mirror F12, which directs and / or transmits the second fluorescence radiation FL2 to the second photodetector PD2. The second photodetector PD2 converts the second temporal intensity profile of the second fluorescence intensity I. fl2(t) of the second sensor element NV2 is converted into a second receiver output signal S02. The multi-channel analog-to-digital converter ADC acquires the second receiver output signal S12, amplified by a second amplifier V12, and makes the sampled data of the second receiver output signal S02 available to the computer core µC and / or other device components of the computer system RSYS for evaluation and / or use by means of computer-implemented and / or machine-implemented methods and / or algorithms. RSYS computer system

[0199] The RSYS computer system of an air gap sensor, or of the current sensor or fuse presented here, comprises at least the microcontroller (µC) core, which is connected via a data bus (DB) to the multi-channel analog-to-digital converter (ADC), the digital-to-analog converter (DAC), and a memory (MEM) comprising one or more volatile memory (RAM) units and / or one or more non-volatile memory (NVM) units. Via at least one data bus interface (DBINF) and an attached data communication channel (EXTDB) (e.g., an external data bus or a wireless transmission link), the proposed RSYS computer system can communicate with one or more other computer systems (RCOMP), which may be higher-level, and exchange data and / or, if applicable, program code.

[0200] In the example of the Fig.14. The second sensor element NV2 is to have a different first support material TM12 with a different magnetic field-modifying effect than the first support material TM11 of the first sensor element NV1 of the multi-sensor element module MSEM. For example, the second magnetic flux density B2(t) at the location of the second paramagnetic centers NVZ2 of the second sensor element NV2 of the multi-sensor element module MSEM is to be smaller than the first magnetic flux density B1(t) at the location of the first paramagnetic centers NVZ1 of the first sensor element NV1 of the multi-sensor element module MSEM. Therefore, the magnetic flux density B is determined by the external magnetic flux density B ext The first magnetic flux density B1(t) acting on the first sensor element NV1 with the first paramagnetic centers NVZ1 is greater than the second magnetic flux density B2(t) acting on the second sensor element NV2 with the second paramagnetic centers NVZ2. Therefore, the curves of Fig.7 to 11 similarly for the current sensor of the Fig. 14.

[0201] The RSYS computer system can, by means of the methods described in this document, when executed as machine- and / or computer-implemented methods, now determine a value of the magnitude of the external magnetic flux density |B by executing the corresponding program code in the memory MEM. ext (t)| and / or possibly the magnitude of the electric current |I LTG (t)l in the line LTG determine and / or estimate and / or, if necessary, calculate the amount of electrical power transported in the line LTG |P LTG (t)| determine and / or estimate. In the case of determining or estimating the amount of electrical power transported in the LTG line |P LTG(t)| The device preferably detects the electrical potential of the line LTG, for example, by means of the multi-channel analog-to-digital converter ADC. The disadvantage of this solution, however, would be the loss of galvanic isolation.

[0202] The RSYS computer system can use the values ​​of the magnitude of the external magnetic flux density |B determined or estimated in this way. ext (t)| or of the electric current |I LTG (t)| compare the current in the line with one or more threshold values ​​and control an electronic switch T2 in the line LTG depending on the result of this comparison(s). Preferably, the computer system RSYS can then control the electrical current flow of the electric current I. LTGThe current sensor's switching driver (SDRV) enables or prevents operation in the LTG line by means of a corresponding control signal. For this purpose, the SDRV driver can open or close switch T2 using an optical or electrical switching signal.

[0203] For example, if the computer- and / or machine-implemented method for extracting the measured values ​​from the fluorescence intensities (I fl1 (|B1(t)|), I fl2 (|B2(t) |)) of the fluorescence radiations (FL1, FL2) of the sensor elements (NV1, NV2) and for evaluating the recorded measured values ​​and for controlling the switch T2 is set up to open the switch T2, • if the value of the magnitude of the line current I LTG in the LTG line or the magnitude of the external magnetic field B ext (t) or exceeds a current threshold or a flux density threshold and / or • if the value of the amount of electrical power transported in the line LTG P LTG exceeds a performance threshold and / or • if the vector of recorded fluorescence intensity values ​​(I fl1 (|B1(t)|), I fl2 (|B2(t) |)) of the fluorescence radiations (FL1, FL2) of the sensor elements (NV1, NV2) in an impermissible range of the combination of these fluorescence intensities (I fl1 (|B1(t)|), I fl2 If the (|B2(t)|)) of the fluorescence radiations (FL1, FL2) of the sensor elements (NV1, NV2) is located, then the function of the current sensor is equivalent to that of an electronic fuse.

[0204] Preferably, the control signal of the current sensor's switch driver SDRV, with which the current sensor's switch driver SDRV controls switch T2, is an optical signal, wherein an optical signal, as defined in this document, only includes wavelengths in the optical wavelength range of 1 nm to 1 mm. This has the advantage of complete galvanic isolation between the line and its device components, including switch T2, on the one hand, and the other device components of the current sensor on the other, making this current sensor suitable for ultra-high-voltage applications. If galvanic isolation is omitted, switch T2 can also be controlled by the RSYS computer system via an electrical line.

[0205] It is also important to mention that the figure is not to scale. Figure 15

[0206] Fig.Figure 15 shows a third exemplary way of adjusting the external magnetic flux density B. ext (t) which is driven by an electric current I LTG in the electrical conductor LTG in the multi-sensor element module. This document describes an exemplary means of achieving this setting. In this example, the LTG conductor of the current or power sensor comprises the Fig. 15 For this purpose, a meander loop MSL is used as an exemplary means.

[0207] The meandering loop MSL comprises a forward line in the form of a first line section LTGa of the meandering loop MSL and a parallel return line LTGb of the meandering loop MSL at a meandering loop spacing b. The meandering loop MSL has a slot SL with the meandering loop spacing b. The multi-sensor element module MSEM is placed in the slot SL. The control and evaluation device CTR controls the first sensor element NV1 with first pump radiation LB1 via the fiber optic system LWLS, using, for example, the first fiber optic cable LTG1 contained in the fiber optic sensor system LWLS, and the second sensor element NV2 with second pump radiation LB2 also contained in the fiber optic sensor system LWLS.The control and evaluation device CTR detects and evaluates the first fluorescence radiation FI1 of the first sensor element NV11 of the multi-sensor element module MSEM, which is transported back via the first optical fiber LWL1, and the second fluorescence radiation FI2 of the second sensor element NV1 of the multi-sensor element module MSEM, which is transported back via the second optical fiber LWL2.

[0208] In the lower part of the figure is the Fig. Figure 10 is shown to illustrate which characteristic curve of the sensor elements (NV1, NV2) of the multi-sensor element module MSEM belongs to which sensor element (NV1, NV2).

[0209] It is important to mention here that the figure is not to scale. Reference symbol list AX motor axle; B magnetic flux density; BSTR magnetic stray field of the air gap LS; CTR control and evaluation device; d lThickness of the carrier material TM at the center MP of the end face EF at the first end ELWL1 of the first and / or second or common optical fiber LWL; d r Thickness at other points of the end surface EF of the first end ELWL1 of the first and / or the second or the common optical fiber LWL; D LWL Diameter of the optical fiber (OF) D LWLL Diameter of the optical waveguide lens LWLL; DM Diamonds; EF end surface of the first end ELWL1 of the first and / or the second or the common optical fiber LWL; ELWL1 first end of the optical fiber LWL; EU one revolution of the engine; EXTDB external data bus; F1 dichroic mirror; FL Fluorescence radiation; FM optically opaque filler; G Signal generator; GH housing of the stator; GHR rotor housing; GND reference potential; HB Half-bridges; HSL half-bridge control lines; I MPHU Motor phase current of the U motor phase MPH U ; I MPHV Motor phase current of the V-motor phase MPH V ; I MPHW Motor phase current of the W-motor phase MPH W ; LB Pump radiation; LIV Lock-In Amplifier; LS air gap; LST value of the fluorescence intensity-based flux density measurement signal (in arbitrary units); Fiber optic cable; LWLC core of the optical fiber LWL; LWLL optical fiber lens; M1 Multiplier; MH mechanical casing; ML center line of the optical fiber (this is a virtual line); MP center of the end face EF of the first end ELWL1 of the optical fiber LWL; MPH motor phases; MPH UU-motor phase; MPH V V-engine phase; MPH W W-motor phase; MRK marking on the rotor housing GHR; NV sensor element. Preferably, the sensor element comprises a plurality of nanodiamonds that are oriented differently and preferably have a plurality of NV centers. NVZ NV centers; OF Opening in the housing GH for the insertion of the optical fiber LWL and / or optical window in the housing GH; OFF1 Offset Addition; φ MPHU Current angle of the complex current vector of the motor phase current I MPHU the engine phase MPH U ; φ MPHV Current angle of the complex current vector of the motor phase current I MPHV the engine phase MPH V ; φ MPHW Current angle of the complex current vector of the motor phase current I MPHW the engine phase MPH W ; PD photodetector; PL pump radiation source; PM permanent magnet of the rotor POS position detector; POSS position signal; POSSW value of the POSS position signal in arbitrary units; RMK magnetic rotor circuit RMK; S0 receiver output signal; S1 amplified receiver output signal; S3 filter input signal; S4 flux density measurement signal; S5 transmit signal; S5w transmit pre-signal; SL windings of a stator coil; SMK magnetic stator circuit; t time; T Period of the motor currents (I MPHU , I MPHV , I MPHW ); TM Carrier material; TP Low-pass filter; V1 Amplifier; VDD supply voltage; V MPHU Motor phase voltage of the U-motor phase MPH U related to the reference potential GND; V MPHV Motor phase voltage of the V-motor phase MPH Vrelated to the reference potential GND; V MPHW Motor phase voltage of the W-motor phase MPH W related to the reference potential GND; List of cited works

[0210] If, in the context of the nationalization of a subsequent international application, the law of the respective legal system of the state in which the international application of the document presented here is nationalized permits disclosure by reference, the content of the following documents forms an entire part of the disclosure presented here. DE 10 2020 129 367 A1 DE 10 2022 004 475A1, DE 10 2022 005 094 A1, DE 10 2022 121 444 A1, DE 10 2022 122 505 A1, DE 10 2023 122 656 A1, DE 10 2023 122 657 A1, DE 10 2023 122 667 A1, DE 10 2024 121 450 A1 DE 10 2024 202 505 A1, DE 10 2025 100 508 A1 DE 10 2025 100 512.5, PCT / DE 2025 / 100 020, WO 2024 041 703 A1,

Claims

[1] First carrier material for an optical sensor element (NV), wherein the first support material contains particles modifying the magnetic flux density (B(t)) which are embedded in a matrix material, and wherein these particles modifying the magnetic flux density (B(t)) are arranged and / or constructed and / or manufactured in such a way as to change the sensitivity of the sensor element (NV) and wherein these particles modifying the magnetic flux density (B(t)) leave at least one optical access window for optically controlling and optically reading the sensor element (NV), characterized in that that the sensitivity of the sensor element (NV) with respect to the intensity (I) fl(t)) the fluorescence radiation (FL) emitted by the paramagnetic centers of the sensor element (NV) is specifically adjustable relative to the value of the magnetic flux density (B(t)) at the respective location of the paramagnetic centers due to the first support material by means of design and / or manufacturing and / or dimensioning and / or shaping and / or arrangement. [2] First carrier material according to claim 1, wherein the particles modifying the magnetic flux density (B(t)) include soft magnetic particles. [3] First carrier material according to one of claims 1 to 2, wherein the particles modifying the magnetic flux density (B(t)) are arranged such that they enclose the sensor element (NV) except for at least one optical access window (OF1). [4] First carrier material according to any one of claims 1 to 3, wherein particles of the magnetic flux density (B(t)) modifying particles include ferrites and / or wherein particles modifying the magnetic flux density (B(t)) include superparamagnetic nanoparticles and / or wherein particles of the magnetic flux density (B(t)) modifying particles include Permalloy and / or wherein particles of the magnetic flux density (B(t)) modifying particles include metglas and / or wherein particles of the particles modifying the magnetic flux density (B(t)) have a high magnetic susceptibility of at least 10 3 exhibit and / or where particles of the particles modifying the magnetic flux density (B(t)) have a low coercive field strength (H) c ) of less than 10 A / m. [5] First carrier material according to any one of claims 1 to 4, wherein particles of the particles modifying the magnetic flux density (B(t)) are designed and / or manufactured and / or dimensioned and / or arranged such that they reduce the sensitivity of the sensor element (NV) to changes in the magnetic flux density (B(t)) at the location of the sensor element (NV) by weakening the flux density (B(t)) caused by the external magnetic field at the location of the sensor element (NV). [6] Shielded sensor element (NV) with reduced or modified sensitivity and with a first carrier material (TM1) according to any one of claims 1 to 5, wherein the sensor element (NV) has a second carrier material (TM2) and wherein a large number of magnetic field sensitive particles, in particular crystals, especially disordered ones, are embedded in the second support material (TM2) and wherein one or more or all of these magnetic field-sensitive particles have paramagnetic centers and wherein paramagnetic centers of these paramagnetic centers are configured to, when irradiated with pump radiation (LB) with a pump radiation intensity other than 0W (I), pmp (t)) and a pump radiation wavelength (λ pmp ) a fluorescence radiation (λ fl ) with a time delay of fluorescence radiation (Δfl(t)), which can be 0s, and a fluorescence wavelength (λ fl ) and a fluorescence radiation intensity (I fl (t)) to emit and where the time delay of fluorescence radiation (Δfl(t)) and / or the fluorescence radiation intensity (I) fl (t)) depend on the value of the magnetic flux density B(t) at the location of the paramagnetic centers and wherein the first carrier material (TM1) at least partially encloses the second carrier material (TM2) and wherein the magnetic field-sensitive particles comprise diamonds (DM) and wherein the paramagnetic centers include NV centers and / or ST1 centers and / or SiV centers and / or PbV centers and / or GeV centers, with NV centers being particularly suitable. [7] Multi-sensor element module (MSEM) with a shielded sensor element according to claim 6, wherein the multi-sensor element module (MSEM) comprises at least two sensor elements, a first sensor element (NV1) and a second sensor element (NV2) and / or n sensor elements (NV1 to NV2). n ) with n as a positive integer and wherein at least one sensor element of these sensor elements (NV1, NV2... NV1) is the shielded sensor element according to claim 6 and where the sensor elements (NV1, NV2... NV n) each have all the features of a respective shielded sensor element according to claim 6, except for at least one of these sensor elements (NV1, NV2... NV) n ) must comprise a first carrier material (TM1) according to one of claims 1 to 5. [8] Multi-sensor element module (MSEM) according to claim 7, where the first sensitivity of the first intensity (I fl1 (t)) of the first fluorescence radiation (FL1) of the first magnetic field sensitive particle of the first sensor element (NV1) compared to the value of the magnetic flux density (B(t)) at the location of the paramagnetic centers of the first magnetic field sensitive particle of the first sensor element (NV1) of the second sensitivity of the second intensity (I fl2(t)) of the second fluorescence radiation (FL2) of the second magnetic field sensitive particle of the second sensor element (NV2) is different from the value of the magnetic flux density (B(t)) at the location of the paramagnetic centers of the second magnetic field sensitive particle of the second sensor element (NV2). [9] Device for measuring magnetic flux density (B ext (t)) in a first air gap (ag1) and / or in the first stray field of the first air gap (ag1) of a disc rotor motor, wherein the disc rotor motor has a rotatable axis (AX) and wherein the disc rotor motor has at least one rotor disk (RS) that can be magnetized differently in sections and / or that is magnetized differently in sections and / or that is permanently magnetized differently in sections and wherein the rotor disk (RS) is attached to the axis (AX) in such a way and forms a connection at least temporarily such that the axis (AX) is perpendicular to the rotor disk (RS) and the rotor disk (RS) rotates with the axis (AX) during a rotation and the axis (AX) rotates with the rotor disk (RS) during a rotation and wherein the disc rotor motor has at least one first stator coil package (SSP1) which is flat on at least one side with a first surface and wherein the first stator coil package (SSP1) with this first surface forms the first air gap (ag1) between this first surface and a first surface of the rotor disk (RS) and wherein the assembly of rotor disk (RS) and axle (AX) is rotatably mounted relative to the first stator coil package (SSP1) and wherein the disc rotor motor comprises at least one first multi-sensor element module (MSEM1) according to one of claims 7 to 8 and wherein the multi-sensor element module (MSEM1) is located in the first air gap (ag1) and / or in the area of ​​influence of the magnetic flux density (B) ext (t)), which forms in the first air gap (ag1), and wherein the device is configured to measure one or more values, in particular for the magnetic flux density B to be detected, depending on fluorescence signals (FI1, FL2, FL3) of the multi-sensor element module (MSEM4). ext (t), and / or one or more measured signal(s), in particular for the magnetic flux density to be measured (B) ext (t)) and / or control signals, in particular for one or more half-bridges (HB1, HB2, HB3). [10] Quantum sensor controlled disc rotor motor wherein the quantum sensor controlled disc rotor motor includes a disc rotor motor and wherein the quantum sensor controlled disc rotor motor at least a first device for detecting a first magnetic flux density (B ext (t)) in the first air gap (ag1) of the disc rotor motor according to claim 9 and wherein the control and evaluation device (CTR) of the first device for detecting a first magnetic flux density (B ext (t)) is set up in the first air gap (ag1) of the disc rotor motor to - to irradiate the respective first sensor elements (NV1, NV2) of the first multi-sensor element module (MSEM1) with one or more first pump radiations (LB1, LB2, LB3) and - to receive the respective first fluorescence radiations (FL1, FL2, FL3) of the respective first sensor elements (NV1, NV2) of the first multi-sensor element module (MSEM1) by means of the respective first photodetectors (PD1, PD2, PD3) and - to evaluate the respective first receiver output signals (S01, S02, S03) of these respective first photodetectors (PD1, PD2, PD3) assigned to the respective first sensor elements (NV1, NV2) of the first multi-sensor element module (MSEM1) and - to generate one or more first half-bridge control signals (HSL) depending on these first receiver output signals (S01, S02, S03) and where these one or more first half-bridge control signals (HSL) control the first electronic switches (T HU , T LU , T HV , T LV , T HW , T LW ) control one or more first half-bridges (HB1, HB2, HB3) and wherein these one or more first half-bridges (HB1, HB2, HB3) are connected via the respective first motor phases (motor connection lines) (MPH) U , MPH V , MPH W) the first stator coils (SL1, SL2, SI3) of the first stator coil package (SSP1) of the disc rotor motor with their respective first electrical currents (I U , I V , I W ) depending on the one or more first half-bridge control signals (HSL) and thus depending on the first receiver output signals (S01, S02, S03) and thus depending on the first intensities (I fl1 (t) , I fl2 (t) , I fl3 (t)) of the first fluorescence radiations (FI1, FL2, FL3) of the first sensor elements (NV1, NV2, NV3) of the first multi-sensor element module (MSEM1). [11] Quantum sensor controlled disc rotor motor according to claim 10, wherein the quantum sensor controlled disc rotor motor at least a second device for detecting a first magnetic flux density (B ext (t)) in a second air gap (ag2) of the disc rotor motor according to claim 9 and wherein the control and evaluation device (CTR) of the second device for detecting a second magnetic flux density (B ext (t)) in the second air gap (ag2) of the disc rotor motor is set up to - to irradiate the respective sensor elements (NV1, NV2) of the second multi-sensor element module (MSEM2) with one or more pump radiations (LB1, LB2, LB3) and - to receive the respective fluorescence radiations (FL1, FL2, FL3) of the respective sensor elements (NV1, NV2) of the second multi-sensor element module (MSEM2) by means of respective photodetectors (PD1, PD2, PD3) and - to evaluate the respective receiver output signals (S01, S02, S03) of these respective photodetectors (PD1, PD2, PD3) assigned to the respective sensor elements (NV1, NV2) of the second multi-sensor element module (MSEM2) and - to generate one or more second half-bridge control signals (HSL) depending on these second receiver output signals (S01, S02, S03) and wherein these one or more second half-bridge control signals (HSL) control the second electronic switches (T HU , T LU , T HV , T LV , T HW , T LW ) control one or more second half-bridges (HB1, HB2, HB3) and wherein these one or more second half-bridges (HB1, HB2, HB3) are connected via their respective second motor phases (motor connection lines) (MPH) U , MPH V , MPH W ) the second stator coils (SL1, SL2, SI3) of the second stator coil package (SSP2) of the disc rotor motor with respective second electrical currents (I U , I V , I W) depending on the one or more second half-bridge control signals (HSL) and thus depending on the second receiver output signals (S01, S02, S03) and thus depending on the second intensities (I fl1 (t), I fl2 (t), I fl3 (t)) to power the second fluorescence radiations (Fl1, FL2, FL3) of the second sensor elements (NV1, NV2, NV3) of the second multi-sensor element module (MSEM2).

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