METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
DE102025149976A1Undetermined Publication Date: 2026-07-09TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Application Number
- DE102025149976
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-05-09
- Filing Date
- 2025-12-02
- Publication Date
- 2026-07-09
Abstract
A method for fabricating a semiconductor device comprises depositing a photoresist composition over a target layer on a substrate to form a photoresist layer. The photoresist layer is selectively exposed to actinic radiation. After selective exposure, the photoresist layer is subjected to a vacuum. O₂ and H₂O are introduced into the selectively exposed photoresist layer. The selectively exposed photoresist layer is baked. After baking, the photoresist layer is developed. The target layer is etched using the photoresist layer as an etching mask.
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Citation Information
Patent Citations
US-PATENTANMELDUNGNR.63/742,245
US63742245B1