Organic compound and light-emitting device

Abstract

An organic compound with a low refractive index is provided. An organic compound represented by the general formula (G1) is provided.In the general formula (G1), Q1 to Q3 each independently represent N or CH; at least two of Q1 to Q3 represent N; R1 to R3 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; n is an integer greater than or equal to 2 and less than or equal to 5; R10 represents hydrogen, an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; R11 to R24 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms; and at least one of R11 to R24 represents a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms.

Description

Background of the invention 1. Field of the invention One embodiment of the present invention relates to an organic compound, an organic semiconductor device, a light-emitting device, a light-receiving device, a light-emitting arrangement, a light-receiving arrangement, a display device, an electronic device, a lighting device, and an electronic device. It should be noted that one embodiment of the present invention is not limited to the foregoing technical field. The technical field of one embodiment of the invention disclosed in this description and the like relates to an object, a process, or a manufacturing process. One embodiment of the present invention relates to a process, a machine, a product, or a composition.Specific examples for the technical field of an embodiment of the present invention disclosed in this description include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, an energy storage device, a storage device, an imaging device, an operating method therefor, and a manufacturing method therefor. 2. Description of the state of the art Light-emitting devices (organic EL devices) containing organic compounds and utilizing electroluminescence (EL) are used in practice. The basic structure of such devices consists of an organic compound layer (EL layer) containing a light-emitting material, sandwiched between a pair of electrodes. Charge carriers are injected into the device by applying a voltage, and the recombination energy of these charge carriers is used to produce light emission from the light-emitting material. Such light-emitting devices are self-illuminating and therefore, when used in display pixels, offer advantages over liquid crystal devices, such as high visibility and no need for backlighting, making them suitable for use in flat panel displays. Displays incorporating such light-emitting devices are also highly advantageous because they can be thin and lightweight. Another characteristic of such organic EL elements is their very fast response time. Since a continuous planar light-emitting layer can be formed for such devices, planar light emission can be achieved.It is difficult to achieve this feature with point light sources, such as incandescent lamps or LEDs, or linear light sources, such as fluorescent lamps; therefore, such light-emitting devices also have great potential as planar light sources that can be applied to lighting devices and the like. Displays or lighting devices comprising light-emitting devices can be used for various electronic devices as described above, and research and development of light-emitting devices has progressed towards more advantageous properties. Low output efficiency is a common problem in organic EL devices. In particular, attenuation due to reflection caused by a difference in refractive index between adjacent layers is a major cause of reduced device efficiency. To mitigate this effect, a structure has been proposed in which a layer of a low-refractive-index material is embedded within an EL layer (see, for example, Non-Patent Document 1). A light-emitting device with this structure can exhibit higher output efficiency and higher external quantum efficiency than a light-emitting device with a conventional structure. The EL layer of an organic EL element can be formed by one of several processes, such as vacuum evaporation, gravure printing, offset printing, screen printing, inkjet printing, and rotary coating. According to recent findings, a giant surface potential (GSP) arises in some cases of films obtained by vacuum evaporation. The term GSP refers to a phenomenon caused by spontaneous orientational polarization (SOP), which results from a deviation in the orientation of the permanent electric dipole moment of an evaporated film from that of an organic compound in the thickness direction. The surface potential of a film formed by evaporation with GSP changes linearly with increasing thickness without saturation. For example, the surface potential of a film formed by evaporation of Tris(8-quinolinolato)aluminium(III) (abbreviation: Alq3) reaches approximately 28 V at a thickness of 560 nm. The electric field strength reaches 5 × 10⁵ V / cm, which is approximately the same level as the electric field strength during the operation of a general light-emitting device. The slope of a surface potential (GSP) is represented by ΔV / Δd, where ΔV is the rate of change of the surface potential (mV) and Δd is the rate of change of thickness (nm) of a film whose GSP changes proportionally to its thickness. It should be noted that a GSP slope of a film whose surface potential increases with increasing thickness is a positive GSP slope, and a GSP slope of a film whose surface potential decreases with increasing thickness is a negative GSP slope. It can be assumed that the Alq3 described above is a material exhibiting a positive GSP slope in the form of a film. The potential of a layer with a positive GSP slope is lower on the substrate side, and the potential of a layer with a negative GSP slope is higher on the substrate side. As described above, GSP is a phenomenon due to SOP, caused by a deviation in the orientation of a permanent electric dipole moment in the thickness direction. This means that the following phenomena can be expected: In a layer with a positive GSP slope, a negative polarization charge is induced on the side where evaporation begins (the substrate side), and a positive polarization charge is induced on the side where evaporation ends (the second electrode side); similarly, in a layer with a negative GSP slope, a positive polarization charge is induced on the side where evaporation begins (the substrate side), and a negative polarization charge is induced on the side where evaporation ends (the second electrode side).In this way, GSP originates from such an induction of a polarization charge. Films formed by evaporation of most organic compounds exhibit a positive GSP slope; therefore, in the case where a first layer forms on and in contact with a second layer, the GSP slope of the first layer and the GSP slope of the second layer are represented by the same positive sign. In this case, a polarization charge of the second layer on the side of the first layer is canceled out by a polarization charge of the first layer on the side of the second layer, and only a remaining charge can be considered an interface charge (fixed charge) at the interface between the first and second layers. Such interfacial charge at the interface between films formed by evaporation could have adverse effects on the properties of an organic EL element. Therefore, research and development have been carried out to control the GSP of an evaporation film formed from an organic compound. For example, non-patent document 2 discloses that the GSP slope of an evaporation film changes significantly depending on the substituent introduced into the organic compound. [Reference] [Nicht-Patentdokument 1] Jaeho Lee et al., „Synergetic electrode architecture for efficient graphene-based flexible organic light-emitting diodes“, Nature COMMUNICATIONS, 2. Juni, 2016, DOI: 10.1038 / ncomms 11791 .[Nicht-Patentdokument 2] Masaki Tanaka et al., „Spontaneous formation of metastable orientation with well-organized permanent dipole moment in organic glassy films“, Nature Materials, 2022, Vol. 21, S. 819-825 .[Nicht-Patentdokument 3] Yutaka Noguchi et al., „Charge accumulation at organic semiconductor interfaces due to a permanent dipole moment and its orientational order in bilayer devices“, Journal of Applied Physics, 2012, 111, 114508 .[Nicht-Patentdokument 4] Y. Noguchi et al., „Spontaneous Orientation Polarization of Polar Molecules and Interface Properties of Organic Electronic Devices“, Journal of the Vacuum Society of Japan, 2015, Vol. 58, Nr. 3 . Zusammenfassung der Erfindung To improve the properties of an organic EL element, it is effective to use an organic compound with high charge carrier transport properties, a low refractive index, and a small GSP slope in a charge carrier transport layer of the organic EL element. However, developing such an organic compound is not easy. This is because a low refractive index represents a trade-off between high charge carrier transport properties and high reliability in a light-emitting device. This problem arises because the charge carrier transport properties, reliability, and similar characteristics of an organic compound strongly depend on the presence of unsaturated bonds, and organic compounds with many unsaturated bonds tend to have a high refractive index. Conversely, if an organic compound has many saturated hydrocarbon groups to achieve a low refractive index, it tends to suffer from poor charge carrier transport properties, low reliability, or similar issues. Saturated hydrocarbon groups, which lack conjugation, cause weaker intermolecular dispersion forces and van der Waals forces than unsaturated hydrocarbon groups. Consequently, when a film is formed by vacuum evaporation using a compound with saturated and unsaturated hydrocarbon groups, the molecules tend to orient themselves such that the unsaturated hydrocarbon groups face the substrate or the already deposited film, and the saturated hydrocarbon groups face the film surface. Furthermore, since a saturated hydrocarbon group is an electron donor group, the dipole moment of the molecule tends to be such that the side of the saturated hydrocarbon group is positively polar.Therefore, there is a tendency for a film formed from a compound with a saturated hydrocarbon group to have a large positive GSP slope due to the relationship between the orientation produced by a vacuum evaporation process and the permanent electric dipole moment of the molecule. In light of the foregoing, one object of an embodiment of the present invention is to provide an organic compound having a low reflectance index in the form of a film. Another object is to provide an organic compound having a small ground surface gradient (GSP) in the form of a film. Another object is to provide an organic compound having charge carrier transport properties. Another object is to provide an organic compound having high charge carrier transport properties, a low refractive index, and a small GSP in the form of a film. A further object is to provide a novel organic compound. Another object of an embodiment of the present invention is to provide a light-emitting device with high emission efficiency. Another object is to provide a light-emitting device with low operating voltage. Another object is to provide a light-emitting device, a light-emitting assembly, an electronic device, a display device, and an electronic device, each of which has low power consumption. It should be noted that the description of these problems does not preclude the existence of further problems. An embodiment of the present invention need not necessarily fulfill all of these problems. Further problems will become apparent from the explanation of the description, the drawings, the claims, and the like, and can be derived from them. One embodiment of the present invention is an organic compound represented by the general formula (G1). In the general formula (G1), Q1 to Q3 each independently represent N or CH (including CD); at least two of Q1 to Q3 represent N; R1 to R3 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; n is an integer greater than or equal to 2 and less than or equal to 5; R10 represents hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; R11 to R24 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms;At least one of R11 to R24 represents a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms; a plurality of R1 may be the same or different from each other; a plurality of R2 may be the same or different from each other; a plurality of R3 may be the same or different from each other; and if 5-n is greater than or equal to 2, a plurality of R10 may be the same or different from each other. Another embodiment of the present invention is an organic compound represented by the general formula (G2). In the general formula (G2), Q1 to Q3 each independently represent N or CH (including CD); at least two of Q1 to Q3 represent N; R1 to R3 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; n is an integer greater than or equal to 2 and less than or equal to 5; R10 represents hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; R12 to R24 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms; Hy represents a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms; A multitude of R1s can be the same or different from each other;A plurality of R2 can be the same or different from each other; a plurality of R3 can be the same or different from each other; and if 5-n is greater than or equal to 2, a plurality of R10 can be the same or different from each other. In the organic compound with one of the above structures, the substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms preferably contains nitrogen. In the organic compound with one of the above structures, one or more atoms are contained in an aromatic ring of the substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms, preferably nitrogen atoms. In the above organic compound, the substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms is preferably a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted pyrimidinyl group, or a substituted or unsubstituted pyrazinyl group. In the organic compound with one of the above structures, the substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms preferably comprises at least one of an alkyl group with 1 to 6 carbon atoms and a cycloalkyl group with 3 to 10 carbon atoms. Another embodiment of the present invention is an organic compound represented by the general formula (G3). In the general formula (G3), Q1 to Q3 each independently represent N or CH (including CD); at least two of Q1 to Q3 represent N; R1 to R3 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; n is an integer greater than or equal to 2 and less than or equal to 5; R10 represents hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; R12 to R24 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms;R25 to R28 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; a plurality of R1 may be the same or different from each other; a plurality of R2 may be the same or different from each other; a plurality of R3 may be the same or different from each other; and if 5-n is greater than or equal to 2, a plurality of R10 may be the same or different from each other. Another embodiment of the present invention is an organic compound represented by the general formula (G4). In the general formula (G4), Q1 to Q3 each independently represent N or CH (including CD); at least two of Q1 to Q3 represent N; R1 to R3 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; n is an integer greater than or equal to 2 and less than or equal to 5; R10 represents hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; R12 to R24 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms;R25 to R28 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; a plurality of R1 may be the same or different from each other; a plurality of R2 may be the same or different from each other; a plurality of R3 may be the same or different from each other; and if 5-n is greater than or equal to 2, a plurality of R10 may be the same or different from each other. In the organic compound with one of the above structures, n is preferably 2 or 3, more preferably 2. Another embodiment of the present invention is an organic compound represented by the general formula (G5). In the general formula (G5), Q1 to Q3 each independently represent N or CH (including CD); at least two of Q1 to Q3 represent N; R1 to R6 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; R8 to R10 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; R12 to R24 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms; R25 to R28 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms. In the organic compound with one of the above structures, at least one of R25 to R28 preferably represents an alkyl group with 1 to 6 carbon atoms or a cycloalkyl group with 3 to 10 carbon atoms. In the organic compounds with one of the above structures, Q1 to Q3 preferably represent N. Another embodiment of the present invention is an organic compound represented by the structural formula (100). Another embodiment of the present invention is a light-emitting device containing the organic compound with one of the aforementioned structures. Another embodiment of the present invention is a light-emitting device comprising a first electrode, a second electrode and an EL layer positioned between the first electrode and the second electrode, wherein the EL layer comprises a light-emitting layer and an electron transport layer, the electron transport layer is positioned between the light-emitting layer and the second electrode, the distance between the electron transport layer and the second electrode is less than or equal to 5 nm and the electron transport layer contains the organic compound with one of the aforementioned structures. Another embodiment of the present invention is a light-emitting device comprising a first electrode, a second electrode and an EL layer positioned between the first electrode and the second electrode, wherein the EL layer comprises a light-emitting layer and an electron transport layer, the electron transport layer is positioned between the light-emitting layer and the second electrode, the electron transport layer is a mixed layer containing a first organic compound and a metal complex, and the first organic compound comprises a π-electron-deficient heteroaromatic ring and a trialkylsilyl group with 3 to 18 carbon atoms. In the organic compounds with one of the above structures, the π-electron-deficient heteroaromatic ring is preferably a pyrimidine ring or a triazine ring. Another embodiment of the present invention is a light-emitting device comprising a first electrode, a second electrode and an EL layer positioned between the first electrode and the second electrode, wherein the EL layer comprises a light-emitting layer and an electron transport layer, the electron transport layer is positioned between the light-emitting layer and the second electrode, the electron transport layer is a mixed layer containing a first organic compound and a metal complex, and the first organic compound is an organic compound represented by the general formula (G0). In the general formula (G0), Q1 to Q3 each independently represent N or CH; at least two of Q1 to Q3 represent N; R1 to R3 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; n is an integer greater than or equal to 1 and less than or equal to 5; R10 to R24 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, a trisubstituted silyl group with 3 to 18 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms;If n is greater than or equal to 2, a plurality of R1 can be the same or different from each other, a plurality of R2 can be the same or different from each other, and a plurality of R3 can be the same or different from each other; and if 5-n is greater than or equal to 2, a plurality of R10 can be the same or different from each other. In the organic compound with one of the above structures, the distance between the electron transport layer and the second electrode is preferably less than or equal to 5 nm. In the organic compound with one of the above structures, the metal complex preferably contains an alkali metal. One embodiment of the present invention can provide an organic compound having a low reflectance index in the form of a film. Another embodiment can provide an organic compound having a small GSP slope in the form of a film. Another embodiment can provide an organic compound having charge carrier transport properties. Another embodiment can provide an organic compound having high charge carrier transport properties, a low refractive index, and a small GSP slope in the form of a film. Another embodiment can provide a novel organic compound. Another embodiment of the present invention can provide a light-emitting device with high emission efficiency. Another embodiment can provide a light-emitting device with low operating voltage. Another embodiment can provide a light-emitting device, a light-emitting assembly, an electronic device, a display device, and an electronic device, each of which has low power consumption. It should be noted that the description of these effects does not preclude the existence of further effects. An embodiment of the present invention need not necessarily exhibit all of these effects. Further effects can be derived from the explanation of the description, the drawings, and the claims. Brief description of the drawings Figures 1A to 1F each depict a structure of a light-emitting device according to one embodiment. Figures 2A and 2B are perspective views showing a structural example of a display module. Figures 3A and 3B are cross-sectional views showing structural examples of a display device. Figure 4 is a perspective view showing a structural example of a display device. Figure 5 is a cross-sectional view showing a structural example of a display device. Figure 6 is a cross-sectional view showing a structural example of a display device. Figures 7A and 7B show examples of electronic devices. Figures 8A to 8F show examples of electronic devices. Figures 9A to 9G show examples of electronic devices. Figure 10 shows a structure of a measuring device 1. Figure 11 shows a structure of a light-emitting device according to one example.Figure 12 shows the structure of a light-emitting device according to an example. Figure 13 is a 1H NMR diagram of 2-[3-(2,6-dimethylpyridin-3-yl)-5-(4,6-diphenyl-1,3,5-triazine)]phenyl-4,4,5,5-tetramethyl-1,3,2-dioxaborolane. Figure 14 is an enlarged view of the 1H NMR diagram of 2-[3-(2,6-dimethylpyridin-3-yl)-5-(4,6-diphenyl-1,3,5-triazine)]phenyl-4,4,5,5-tetramethyl-1,3,2-dioxaborolane. Figure 15 is a 1H NMR diagram of mmTMSPh-mDMePyPTzn. Fig. 16 is an enlarged view of a 1H NMR diagram of mmTMSPh-mDMePyPTzn. Fig. 17 shows an emission spectrum and an absorption spectrum of a dichloromethane solution of mmTMSPh-mDMePyPTzn. Fig. 18 shows an emission spectrum and an absorption spectrum of a thin film of mmTMSPh-mDMePyPTzn. Fig. 19 shows measurement data of refractive indices of mmTMSPh-mDMePyPTzn. Figs. 20A to 20C show a stable structure of mmTMSPh-mDMePyPTzn used for the calculation.Figures 21A to 21C show a stable structure of mmtBuPh-mDMePyPTzn, which was used for the calculation. Figure 22 shows capacitance-voltage characteristics of a measuring device 1. Figure 23 shows current density-voltage characteristics of measuring device 1. Figure 24 shows luminance-current density characteristics of a light-emitting device G-1, a light-emitting comparator device G-2, and a light-emitting comparator device G-3. Figure 25 shows luminance-voltage characteristics of the light-emitting device G-1 and the light-emitting comparators G-2 and G-3. Figure 26 shows current efficiency-luminance characteristics of the light-emitting device G-1 and the light-emitting comparators G-2 and G-3. Figure 27 shows current density-voltage characteristics of the light-emitting device G-1 and the light-emitting comparator device G-2. Fig.Figure 28 shows external quantum efficiency-luminance characteristics of light-emitting device G-1 and light-emitting comparator devices G-2 and G-3. Figure 29 shows electroluminescence spectra of light-emitting device G-1 and light-emitting comparator devices G-2 and G-3. Figure 30 shows capacitance-voltage characteristics of light-emitting device G-1 and light-emitting comparator device G-2. Figure 31 shows changes in luminance over the operating time of light-emitting device G-1 and light-emitting comparator devices G-2 and G-3. Figure 32 shows luminance-current density characteristics of light-emitting device G-4 and light-emitting comparator device G-5. Figure 33 shows luminance-voltage characteristics of light-emitting device G-4 and light-emitting comparator device G-5.Figure 34 shows current efficiency-luminance properties of light-emitting device G-4 and light-emitting comparison device G-5. Figure 35 shows current density-voltage properties of light-emitting device G-4 and light-emitting comparison device G-5. Figure 36 shows external quantum efficiency-luminance properties of light-emitting device G-4 and light-emitting comparison device G-5. Figure 37 shows electroluminescence spectra of light-emitting device G-4 and light-emitting comparison device G-5. Figure 38 shows luminance-current density properties of light-emitting device B-1 and light-emitting comparison device B-2. Figure 39 shows luminance-voltage properties of light-emitting device B-1 and light-emitting comparison device B-2.Figure 40 shows the current efficiency-luminance characteristics of light-emitting device B-1 and light-emitting comparison device B-2. Figure 41 shows the current density-voltage characteristics of light-emitting device B-1 and light-emitting comparison device B-2. Figure 42 shows the external quantum efficiency-luminance characteristics of light-emitting device B-1 and light-emitting comparison device B-2. Figure 43 shows the blue index-luminance characteristics of light-emitting device B-1 and light-emitting comparison device B-2. Figure 44 shows the electroluminescence spectra of light-emitting device B-1 and light-emitting comparison device B-2. Figure 45 shows changes in luminance over the operating time of light-emitting device B-1 and light-emitting comparison device B-2.Figure 46 shows luminance-current density properties of a light-emitting device B-3 and light-emitting comparison devices B-4 to B-6. Figure 47 shows luminance-voltage properties of the light-emitting device B-3 and the light-emitting comparison devices B-4 to B-6. Figure 48 shows current-efficiency-luminance properties of the light-emitting device B-3 and the light-emitting comparison devices B-4 to B-6. Figure 49 shows current-density-voltage properties of the light-emitting device B-3 and the light-emitting comparison devices B-4 to B-6. Figure 50 shows external quantum efficiency-luminance properties of the light-emitting device B-3 and the light-emitting comparison devices B-4 to B-6. Fig. 51 shows blue index luminance properties of the light-emitting device B-3 and the light-emitting comparison devices B-4 to B-6.Figure 52 shows electroluminescence spectra of light-emitting device B-3 and light-emitting comparison devices B-4 to B-6. Figure 53 is a 1H NMR diagram of mmTMSPh-mPmPTzn. Figure 54 is an enlarged view of a 1H NMR diagram of mmTMSPh-mPmPTzn. Figure 55 shows an emission spectrum and an absorption spectrum of mmTMSPh-mPmPTzn in a dichloromethane solution. Figure 56 shows an emission spectrum and an absorption spectrum of a thin film of mmTMSPh-mPmPTzn. Figure 57 shows measurement data of refractive indices of mmTMSPh-mPmPTzn. Figure 58 shows luminance-current density characteristics of a light-emitting device G-6, a light-emitting comparison device G-7, and a light-emitting comparison device G-8. Fig. 59 shows luminance-voltage characteristics of the light-emitting device G-6 and the light-emitting comparison devices G-7 and G-8.Figure 60 shows the current efficiency-luminance characteristics of the light-emitting device G-6 and the light-emitting comparison devices G-7 and G-8. Figure 61 shows the current density-voltage characteristics of the light-emitting device G-6 and the light-emitting comparison devices G-7 and G-8. Figure 62 shows the external quantum efficiency-luminance characteristics of the light-emitting device G-6 and the light-emitting comparison devices G-7 and G-8. Figure 63 shows the electroluminescence spectra of the light-emitting device G-6 and the light-emitting comparison devices G-7 and G-8. Figure 64 shows the changes in luminance over the operating time of the light-emitting device G-6 and the light-emitting comparison devices G-7 and G-8. Detailed description of the invention Embodiments of the present invention are described in detail below with reference to the drawings. It should be noted that the present invention is not limited to the following description and that the modes and details of the present invention can be modified in various ways without departing from the concept and scope of the present invention. Therefore, the present invention should not be considered as limited to the description of the following embodiments. It should be noted that the position, size, area, or the like of each component shown in drawings and the like is, in some cases, not shown precisely for ease of understanding. Therefore, the disclosed invention is not necessarily limited to the position, size, area, or the like disclosed in the drawings and the like. The ordinal numbers, such as "first" and "second," in this description and the like are used for simplicity and, in some cases, do not indicate the sequence of steps or the order of layers. Therefore, for example, an appropriate description may be given even if "first" is replaced by "second" or "third." Furthermore, the ordinal numbers in this description and the like are not necessarily the same as those used to specify an embodiment of the present invention. In explaining the structures of the present invention in this description and the like with reference to the drawings, in some cases the same components in different drawings are identified by the same reference numerals. In this description and similar texts, the terms "film" and "layer" may be used interchangeably. For example, the term "conducting layer" may, in some cases, be changed to "conducting film." Similarly, the term "insulating film" may, in some cases, be changed to "insulating layer." It should be noted that in this description and similar texts, hydrogen (H) includes protium (¹H) and deuterium (²H or D). Protium is a stable isotope of hydrogen with a mass number of 1. Deuterium is a stable isotope of hydrogen with a mass number of 2. (Version 1) In this embodiment, an organic compound of an embodiment of the present invention is described. One embodiment of the present invention is an organic compound comprising a trisubstituted silyl group. In this description and the like, a trisubstituted silyl group denotes a monovalent group with a structure in which three substituents are bonded to a silicon atom (Si). Specific examples of the three substituents include an alkyl group and an aryl group. It should be noted that an alkyl group is preferred over an aryl group because the refractive index of the organic compound with an alkyl group can be made lower than that of the organic compound with an aryl group. To investigate the effects of introducing a trisubstituted silyl group into an organic compound, the inventors of the present invention analyzed the permanent electric dipole moments of the stable structures of trimethylsilylbenzene and tert-butylbenzene in their singlet ground states. It should be noted that trimethylsilylbenzene was analyzed as the organic compound containing a trisubstituted silyl group, and tert-butylbenzene was analyzed as a comparative example. Since both trimethylsilyl and tert-butyl groups contain saturated hydrocarbon groups, the introduction of either a trimethylsilyl or tert-butyl group into an aromatic ring of an organic compound is expected to decrease the refractive index of the organic compound. A density functional theory (DFT) method was used as the computational procedure. B3LYP was used as the functional, and 6-311G(d,p) as the basis function. Gaussian 16 was used as the computational program. The calculation yielded a permanent electric dipole moment of tert-butylbenzene of 0.3110 Debye. This permanent electric dipole moment results from the donation of an electron to the benzene ring by a tert-butyl group, which is an electron donor. In contrast, the permanent electric dipole moment of trimethylsilylbenzene is 0.0345 Debye, which is smaller than that of tert-butylbenzene and close to zero. This indicates that the trimethylsilyl group exhibits very little electron donor property with respect to the benzene ring.Therefore, it can be assumed that a trisubstituted silyl group has a worse electron donor property and is therefore more effective in reducing the permanent electric dipole moment of a molecule than a group with a structure in which the same three substituents as those in the trisubstituted silyl group are bonded to a carbon atom. This effect allows a molecule of an organic semiconductor, possessing a trisubstituted silyl group, to maintain a small permanent electric dipole moment. Accordingly, such a molecule can be formed into a film with a low SOP by a vacuum evaporation process. In light of the foregoing, the inventors of the present invention have developed, as an embodiment of the present invention, an organic compound in which a trisubstituted silyl group is introduced into an electron transport framework. The electron transport framework comprises a pyrimidine ring or a triazine ring, which is a π-electron-deficient heteroaromatic ring, and three phenyl groups bonded to the ring. One of the three phenyl groups has a substituent with a trisubstituted silyl group. The organic compound exhibits electron transport properties, and a film of the organic compound formed by evaporation has a low refractive index and a small GSP slope. When the organic compound is used for an electron transport layer of a light-emitting device, the emission efficiency of the light-emitting device can be improved. Next, the organic compound of an embodiment of the present invention will be described in more detail using general formulas. One embodiment of the present invention is an organic compound represented by the general formula (G1). In the general formula (G1), Q1 to Q3 each independently represent N or CH (including CD); at least two of Q1 to Q3 represent N; R1 to R3 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; n is an integer greater than or equal to 2 and less than or equal to 5; R10 represents hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; R11 to R24 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms;At least one of R11 to R24 represents a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms; a plurality of R1 may be the same or different from each other; a plurality of R2 may be the same or different from each other; a plurality of R3 may be the same or different from each other; and if 5-n is greater than or equal to 2, a plurality of R10 may be the same or different from each other. It should be noted that CH represents carbon (C) to which hydrogen (H) is bonded, and CD represents carbon (C) to which deuterium (D) is bonded. In the case of a structure where, as in the organic compound represented by the general formula (G1), a substituent with a trisubstituted silyl group is bonded to only one of the three phenyl groups bonded to the pyrimidine ring or the triazine ring, an increase in steric hindrance around the pyrimidine ring or the triazine ring can be prevented, thus improving the electron transport property of the organic compound, compared to the case where the substituent is bonded to two or more of the three phenyl groups bonded to the pyrimidine ring or the triazine ring. In the case of a structure in which, as in the organic compound represented by the general formula (G1), a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms is bonded to at least one of the three phenyl groups bonded to the pyrimidine ring or the triazine ring, the electron transport property of the organic compound can be further improved. The molecular weight of the organic compound represented by the general formula (G1) is preferably less than or equal to 1500, more preferably less than or equal to 1000, in which case it is expected that the deposition can be carried out by vacuum evaporation at a temperature lower than the thermal decomposition temperature of the organic compound. Another embodiment of the present invention is an organic compound represented by the general formula (G2). In the general formula (G2), Q1 to Q3 each independently represent N or CH (including CD); at least two of Q1 to Q3 represent N; R1 to R3 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; n is an integer greater than or equal to 2 and less than or equal to 5; R10 represents hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; R12 to R24 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms; Hy represents a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms; A multitude of R1s can be the same or different from each other;A plurality of R2 can be the same or different from each other; a plurality of R3 can be the same or different from each other; and if 5-n is greater than or equal to 2, a plurality of R10 can be the same or different from each other. General formula (G2) differs from general formula (G1) in that both the substituent, which has a trisubstituted silyl group, and the substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms are bonded to one of the three phenyl groups attached to the pyrimidine ring or the triazine ring. With such a structure, a film of the organic compound can exhibit improved electron transport properties and a reduced GSP slope compared to the case where the substituent and the heteroaryl group are bonded to their respective phenyl groups. In each of the organic compounds represented by the above general formulas, the substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms is preferably a group containing nitrogen, more preferably a group in which one or more of the atoms contained in an aromatic ring are preferably nitrogen atoms, and even more preferably a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted pyrimidinyl group, or a substituted or unsubstituted pyrazinyl group. These groups exhibit high electron transport properties, which further improves the electron transport properties of the organic compound. These groups are also preferred because they do not exhibit absorption in the visible range and can improve the efficiency of a light-emitting device. In each of the organic compounds represented by the above general formulas, the substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms preferably comprises at least one alkyl group with 1 to 6 carbon atoms and one cycloalkyl group with 3 to 10 carbon atoms. In this case, the refractive index of a film of the organic compound can be further reduced, and the GSP slope of the film can be further reduced. Another embodiment of the present invention is an organic compound represented by the general formula (G3). In the general formula (G3), Q1 to Q3 each independently represent N or CH (including CD); at least two of Q1 to Q3 represent N; R1 to R3 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; n is an integer greater than or equal to 2 and less than or equal to 5; R10 represents hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; R12 to R24 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms;R25 to R28 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; a plurality of R1 may be the same or different from each other; a plurality of R2 may be the same or different from each other; a plurality of R3 may be the same or different from each other; and if 5-n is greater than or equal to 2, a plurality of R10 may be the same or different from each other. General formula (G3) differs from general formula (G2) in that Hy in general formula (G2) is restricted to a substituted or unsubstituted pyridinyl group. This can further improve the electron transport properties of the organic compound while maintaining the low refractive index. Another embodiment of the present invention is an organic compound represented by the general formula (G4). In the general formula (G4), Q1 to Q3 each independently represent N or CH (including CD); at least two of Q1 to Q3 represent N; R1 to R3 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; n is an integer greater than or equal to 2 and less than or equal to 5; R10 represents hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; R12 to R24 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms;R25 to R28 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; a plurality of R1 may be the same or different from each other; a plurality of R2 may be the same or different from each other; a plurality of R3 may be the same or different from each other; and if 5-n is greater than or equal to 2, a plurality of R10 may be the same or different from each other. General formula (G4) differs from general formula (G3) in that the substitution sites of the phenyl group, which has a trisubstituted silyl group, and the substituted or unsubstituted pyridinyl group are restricted to meta positions with respect to the triazine or pyrimidine. The structure in which the phenyl group, which has a trisubstituted silyl group, and the substituted or unsubstituted pyridinyl group are located at the substitution sites shown in general formula (G4) can prevent steric hindrance due to the proximity of the substituents, thus improving the stability of the molecule. Furthermore, a decrease in the LUMO level can be avoided, unlike in the case where the groups are substituted at the para positions.Such a structure, in which the substitution sites are restricted to the meta positions, is preferably used, also because it can prevent the extension of the conjugation of the unsaturated bond to further reduce the refractive index. In this case, R12 to R14 are preferably hydrogen (including deuterium) to allow for higher stability. In each of the organic compounds represented by the above general formulas, n is preferably 2 or 3, more preferably 2. In this case, it is possible to prevent steric hindrance due to the proximity of the trisubstituted silyl groups and a resulting instability of the molecule. In this case, R8 to R10 are preferably hydrogen (including deuterium) to allow for higher stability. Another embodiment of the present invention is an organic compound represented by the general formula (G5). In the general formula (G5), Q1 to Q3 each independently represent N or CH (including CD); at least two of Q1 to Q3 represent N; R1 to R6 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; R8 to R10 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; R12 to R24 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms; R25 to R28 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms. General formula (G5) differs from general formula (G4) in that the number (n) and substitution sites of the trisubstituted silyl groups are limited in general formula (G4). The structure, which has two trisubstituted silyl groups at the substitution sites shown in general formula (G5), can prevent steric hindrance due to the proximity of the trisubstituted silyl groups and a resulting instability of the molecule; thus, the organic compound can be stable. In the organic compound represented by one of the above general formulas, at least one of R25 to R28 preferably represents an alkyl group with 1 to 6 carbon atoms or a cycloalkyl group with 3 to 10 carbon atoms. This may decrease the refractive index of the organic compound. In the organic compound represented by one of the above general formulas, Q1 to Q3 preferably represent N. This can enhance the electron transport properties of the organic compound. Next, specific examples of substituents that can be used for the organic compounds represented by the general formulas above are described. It should be noted that the groups that can be used in the general formulas above are not limited to the specific examples that follow. Furthermore, in the specific examples described below, some or all of the hydrogen atoms can be deuterium. <<Alkyl-Gruppe mit 1 bis 6 Kohlenstoffatomen> > An alkyl group with 1 to 6 carbon atoms is a monovalent group obtained by removing a hydrogen atom (H) from an alkane with 1 to 6 carbon atoms. Specific examples include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a sec-pentyl group, a tert-pentyl group, a neopentyl group, a hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, a neohexyl group, a 3-methylpentyl group, a 2-methylpentyl group, a 2-ethylbutyl group, a 1,2-dimethylbutyl group, a 2,3-dimethylbutyl group, and the like. The alkyl group is preferably a methyl group, in which case there is less steric hindrance due to the proximity of the substituents (alkyl groups), which contributes to the higher stability of the molecule.A methyl group is preferably used, partly because it is sterically small compared to alkyl groups and therefore less likely to impede charge carrier transport. If the alkyl group has two or more carbon atoms, the refractive index of the organic compound can be further reduced. <<Cycloalkyl-Gruppe mit 3 bis 10 Kohlenstoffatomen> > A cycloalkyl group with 3 to 10 carbon atoms is a monovalent group obtained by removing one hydrogen atom from a monocyclic or polycyclic cycloalkane with 3 to 10 carbon atoms. Specific examples include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a 4-methylcyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cycloononyl group, a cyclodecyl group, a norbornyl group, a bicyclo[2,2,2]octyl group, a decahydronaphthyl group, an adamantyl group, and the like. A cycloalkyl group with 6 or more carbon atoms is preferably used, in which case the refractive index of the organic compound may be lower and the glass transition temperature (Tg) of the organic compound may be higher than in the case where a cycloalkyl group with 5 or fewer carbon atoms is used.In particular, a cyclohexyl group is preferred because it is inexpensive. <<Aryl-Gruppe mit 6 bis 30 Kohlenstoffatomen> > An aryl group with 6 to 30 carbon atoms is a monovalent group obtained by removing one hydrogen atom from one of the carbon atoms forming a ring of a monocyclic or polycyclic aromatic compound with 6 to 30 carbon atoms. Specific examples include a phenyl group, an o-tolyl group, an m-tolyl group, a p-tolyl group, a mesityl group, a biphenyl-2-yl group (o-biphenyl group), a biphenyl-3-yl group (m-biphenyl group), a biphenyl-4-yl group (p-biphenyl group), a 1-naphthyl group, a 2-naphthyl group, a phenylnaphthyl group, a naphthylphenyl group, a terphenyl group, a fluorenyl group, a 9,9-dimethylfluorenyl group, a quaterphenyl group, a spirobifluorenyl group, a phenanthryl group, an anthryl group, a binaphthylphenyl group, a fluoranthenyl group, and the like.In cases where the aryl group with 6 to 30 carbon atoms has a substituent, specific examples of the substituent include an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, and a phenyl group. Among aryl groups, a six-membered ring aryl group is preferred due to its high stability and reliability. <<Heteroaryl-Gruppe mit 2 bis 30 Kohlenstoffatomen> > A heteroaryl group with 2 to 30 carbon atoms is a monovalent group obtained by removing one hydrogen atom from one of the carbon atoms forming a ring of a monocyclic or polycyclic heterocyclic aromatic compound with 2 to 30 carbon atoms. Specific examples include a carbazolyl group, a dibenzothiophenyl group, a dibenzofuranyl group, a benzocarbazolyl group, a naphthobenzothiophenyl group, a naphthobenzofuranyl group, a dibenzocarbazolyl group, a dinaphthothiophenyl group, a dinaphthofuranyl group, a triazinyl group, a pyrimidinyl group, a pyrazinyl group, a triazolyl group, a pyridinyl group, a benzofuropyrimidinyl group, a benzothiopyrimidinyl group, a benzofuropyrazinyl group, a benzothiopyrazinyl group, a benzofuropyridinyl group, a benzothiopyridinyl group, a bicarbazolyl group, and the like.In cases where the heteroaryl group with 2 to 30 carbon atoms has a substituent, examples of the substituent include an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, and a phenyl group. Among heteroaryl groups, a heteroaryl group with a six-membered ring is preferred because it exhibits high stability and reliability. A heteroaryl group with two or more nitrogen atoms is preferred because it improves the electron transport properties. A heteroaryl group with one nitrogen atom is preferred because it reduces the refractive index. The above substituents are concrete examples of the substituent that can be used for the organic compounds represented by the general formulas. Specific examples of the organic compounds of embodiments of the present invention, represented by the general formulas above, include organic compounds represented by the structural formulas (100) to (122) below. It should be noted that the organic compound of an embodiment of the present invention is not limited to the organic compounds represented by the following structural formulas. Next, as an example of a method for synthesizing the organic compound of an embodiment of the present invention, a method for synthesizing the organic compounds represented by the general formula (G1) is described. The organic compound represented by the general formula (G1) can be obtained in the following manner: As shown in the synthesis scheme (A-1), a halogen compound (B1) is used to synthesize a boron compound (B2); then the boron compound (B2) and a halogen compound (B3) containing Si react as shown in the synthesis scheme (A-2). It should be noted that Q1 to Q3, R1 to R3, n, R10, and R11 to R24 in synthesis schemes (A-1) and (A-2) are identical to those in the preceding description of general formula (G1) and are not described here. X represents chlorine, bromine, iodine, or a sulfonyloxy group. If X is a halogen, it preferably has a large atomic number to increase the reactivity of the halogen compound (B1). Y represents a boronyl group. It should be noted that a boronic ester, such as pinacol boronic acid ester, may be used as the boron compound (B2). In the above synthesis scheme (A-1), the halogen compound (B1) and a boron source are coupled in the presence of a palladium catalyst, thereby enabling the synthesis of the boron compound (B2). Examples of the boron source include bis(pinacolato)diborone and pinacolborane. Examples of the palladium catalyst include [1,1'-bis(diphenylphosphino)ferrocene]palladium(II) dichloride dichloromethane adduct, palladium(II) acetate, and tris(dibenzylideneacetone)dipalladium(0). Examples of a ligand for the palladium catalyst include 2-dicyclohexylphosphino-2',4',6'-triisopropylbiphenyl. Examples of a base include inorganic bases such as potassium acetate, potassium carbonate, and tripotassium phosphate. Examples of solvents include dimethyl sulfoxide, N,N-dimethylformamide, and 1,4-dioxane. Reagents that can be used are not limited to these. It should be noted that in the above synthesis scheme (A-1) the boron compound (B2) can also be obtained by a reaction of the halogen compound (B1), a lithium reagent and borate ester. In the above synthesis scheme (A-2), the boron compound (B2) and the halogen compound (B3), which contains Si, are coupled in the presence of a palladium catalyst, thereby enabling the synthesis of the organic compound represented by the general formula (G1). Examples of the palladium catalyst include tetrakis(triphenylphosphine)palladium(0), palladium(II) acetate, and tris(dibenzylideneacetone)dipalladium(0). Examples of a ligand for the palladium catalyst include 2-dicyclohexylphosphino-2',4',6'-triisopropylbiphenyl, 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl, tri(ortho-tolyl)phosphine, and triphenylphosphine. Examples of a base include inorganic bases such as potassium acetate, potassium carbonate, sodium carbonate, and tripotassium phosphate. Examples of solvents include toluene, xylene, tetrahydrofuran, dioxane, ethylene glycol dimethyl ether, ethanol, and water. Reagents that can be used are not limited to these. The organic compound of an embodiment of the present invention can be synthesized in the manner described above; however, the present invention is not limited to this and another synthesis method may be used. <Verfahren zum Erhalten der GSP-Steigung> Here, a method for obtaining the GSP slope of an organic compound film formed by a vacuum evaporation process is described. A phenomenon in which the surface potential of a film formed by evaporation increases proportionally to the film's thickness is called a gigantic surface potential, as described above. Generally, the slope of a plot of the surface potential of a film formed by evaporation in the thickness direction, obtained by Kelvin probe measurement, is considered the level of the gigantic surface potential, i.e., the GSP slope (mV / nm). In the case where two distinct layers are stacked on top of each other, a change in the density of charges accumulated at the interface (mC / m²), related to the GSP, can be used to estimate the GSP slope. The density of charges accumulated at the interface is obtained by a capacitance-voltage (CV) measurement on an elemental structure in which charges accumulate on one of the layers. When a voltage is applied to a layered arrangement of organic thin films with different SOPs (one thin film 1 on the anode side and one thin film 2 on the cathode side; the anode is closer to the substrate than the cathode), and the charge carriers that accumulate at the interface (accumulated charges) are electrons, the following equations apply. [Equation 1] [Equation 2] In equation (1), σacce is the accumulated charge density, σint is an interfacial charge density, Vj is an electron injection voltage, Vth is a threshold voltage, d1 is the thickness of thin film 1, and ε1 is the dielectric constant of thin film 1. It should be noted that Vj and Vth can be estimated from the capacitance-voltage characteristics of a device. The dielectric constant can be a value obtained by multiplying the permittivity of free space and the relative permittivity, where the relative permittivity is assumed to be the square of the ordinary refractive index θ (the value at a wavelength of 633 nm).As described above, the interfacial charge density σint can be calculated according to equation (1) using Vinjund Vth, which is estimated from the capacitance-voltage properties, the dielectric constant ε1 of the thin film 1, which is calculated from the refractive index, and the thickness d1 of the thin film 1. Next, in equation (2), P1 and P2 are the degree of SOP of thin film 1 and the degree of SOP of thin film 2, respectively, in the direction perpendicular to the substrate surface, ε2 is the dielectric constant of thin film 2, and d2 is the thickness of thin film 2. Since the interfacial charge density σint can be obtained from the preceding equation (1), the use of a substance with a known GSP slope for thin film 1 allows the GSP slope of thin film 2 to be estimated. The following is an example of the fabrication of a measuring device 1 in which Tris(8-quinolinolato)aluminium(III) (abbreviation: Alq3), whose GSP slope is known, is used for the thin film 1 and mmTMSPh-mDMePyPTzn, which is an organic compound of an embodiment of the present invention, is used for the thin film 2. It should be noted that, according to the non-patent document 3, the GSP slope of Alq3, measured using a Kelvin probe, is 48 mV / nm. Chemical formulas of mmTMSPh-mDMePyPTzn and Alq3 are shown below. As shown in Fig. 10, the measuring device 1 has a structure in which a layer 952, a layer 953, a layer 954, a layer 955 and a layer 956 are arranged one above the other in that order over an anode 951 formed over a glass substrate 950, and a cathode 957 is arranged over layer 956. Table 1 shows the device structure of the measuring device 1. Layers 953 and 954 in measuring device 1 correspond to thin film 1 and thin film 2, respectively. Layer 952 was formed by co-evaporation of N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF) and OCHD-003, an electron-accepting organic compound, to a thickness of 10 nm in a weight ratio of 1:0.1 (PCBBiF:OCHD-003). Layer 953 was formed by evaporation of Alq3 to a thickness of 100 nm. Layer 954 was formed by evaporation of mmTMSPh-mDMePyPTzn to a thickness of 100 nm. Layer 955 was formed by evaporation of 4,7-di-1-pyrrolidinyl-1,10-phenanthroline (abbreviation: Pyrrd-Phen) to a thickness of 1 nm. [Table 1] [Table 1] Cathode 957200 nmAl Layer 9561 nmLiF Layer 9551 nm Pyrrd-Phen Layer 954100 nmmmTMSPh-mDMePyPTzn Layer 953100 nmAlq3 Layer 95210 nmPCBBiF:OCHD-003 (1:0.1) Anode 951110 nmITSO It should be noted that layers 952 to 956 and the cathode in each measuring device were formed from the anode side by a vacuum evaporation process under conditions where the substrate temperature was set to room temperature and the deposition rate was within the range of 0.2 nm / s to 0.6 nm / s. Each layer was formed without interruption of the evaporation process. During the fabrication of the measuring device, the deposition rate of each layer is preferably within the range of 3 nm / min to 600 nm / min. The thickness of each layer in the measuring device is preferably greater than or equal to 1 nm and less than or equal to 500 nm, more preferably greater than or equal to 50 nm and less than or equal to 300 nm. Fig. 22 shows capacitance-voltage characteristics of measuring device 1, and Fig. 23 shows current density-voltage characteristics of this. Table 2 shows the electron injection voltage Vinj, the interfacial charge density σint, and the GSP slope of measuring device 1, obtained from Fig. 22 and equations (1) and (2), and the ordinary refractive indices novon Alq3 and mmTMSPh-mDMePyPTzn, the actual measured thickness d1 of layer 953, and the threshold voltage Vth obtained from Fig. 23, which were used in the calculation. It should be noted that the threshold voltage Vth can also be determined from the capacitance-voltage characteristics. The actual measured thickness d1 of layer 953 is a highly accurate value of an actual formed film, calculated by a spectroscopic ellipsometry method. [Table 2] Electron injection voltage Vinj (V) 0.601 Threshold voltage Vth (V)2.1 Interfacial charge density σint (mC / m 2 )0.45 ordinary refractive index no of Alq3 (@633 nm) 1.71 proper refractive index no of mmTMSPh-mDMePyPTzn (@633 nm) 1.60 d1 (nm) 85.95 GSP slope (mV / nm) 35.0 The GSP slope was estimated to be 35.0 mV / nm from the measurement results of measuring device 1, as shown in Table 2. This means that the GSP slope had a preferred value less than or equal to 40.0 mV / nm. In this way, a device is produced in which Alq3 with a known GSP slope and an organic compound film, whose GSP slope is to be obtained, are arranged one above the other, and the capacitance-voltage properties are measured so that the GSP slope of the organic compound can be estimated. The above describes the procedure for calculating the GSP slope of the organic compound used for the electron transport layer, in which electrons serve as charge carriers. In the case of using the GSP slope of an organic compound used for a hole transport layer, in which holes serve as charge carriers, the GSP slope can be calculated similarly, as described in non-patent document 4, using equation (3) shown below. [Equation 3] Organic compounds used for layers of a light-emitting device are preferably selected taking into account the GSP slopes of films of organic compounds formed by evaporation, which are measured in advance by the above measurement method. The structures described in this embodiment can be used in a suitable combination with any of the structures described in the other embodiments. (Version 2) This embodiment describes a light-emitting device of an embodiment of the present invention. In the light-emitting device of an embodiment of the present invention, an organic compound in which a trisubstituted silyl group is incorporated into an electron transport framework can be used. In particular, an organic compound comprising the π-electron-deficient heteroaromatic ring and a trisubstituted silyl group with 3 to 18 carbon atoms can be used in the light-emitting device of an embodiment of the present invention. Since, as described in embodiment 1, such an organic compound exhibits electron transport properties and a film formed therefrom by evaporation has a low refractive index and a small GSP slope, the light-emitting device in which the organic compound is used for an electron transport layer can have increased emission efficiency and a reduced operating voltage. In the case where the organic compound is used for the electron transport layer of a light-emitting device, the electron transport layer is preferably a mixed layer containing the organic compound and a metal complex, in which case the property of electron injection into the electron transport layer is further improved. The trisubstituted silyl group with 3 to 18 carbon atoms in the organic compound is a group having a structure in which three alkyl groups with a total of 3 to 18 carbon atoms or three aryl groups with a total of 3 to 18 carbon atoms are bonded to silicon (Si). Specific examples of a silyl group with 3 to 18 carbon atoms include a trimethylsilyl group, a triethylsilyl group, a tert-butyldimethylsilyl group, a triphenylsilyl group, and the like. In particular, a trialkylsilyl group with 3 to 18 carbon atoms, such as a trimethylsilyl group, a triethylsilyl group, or a tert-butyldimethylsilyl group, is preferred because it allows for a further reduction in the refractive index of the organic compound. The organic compound with a trimethylsilyl group is especially preferred because it can be synthesized cost-effectively. Examples of the π-electron-deficient heteroaromatic ring in the organic compound include an oxadiazole ring, a triazole ring, a benzimidazole ring, a quinoxaline ring, a dibenzoquinoxaline ring, a quinazoline ring, a phenanthroline ring, a pyridine ring, a diazine ring (a pyrimidine ring, a pyrazine ring, and a pyridazine ring), a triazine ring, and a furodiazine ring. In particular, a pyrimidine or triazine ring, which is a six-membered monocyclic ring, is preferred because it offers a low refractive index, high stability towards charge carriers and excitation, and high reliability compared to a condensed aromatic ring. An organic compound represented by the following general formula (G0) can be given as an example of the organic compound having the π-electron-deficient heteroaromatic ring and the trisubstituted silyl group with 3 to 18 carbon atoms and which can be used in the light-emitting device of an embodiment of the present invention. In the general formula (G0), Q1 to Q3 each independently represent N or CH; at least two of Q1 to Q3 represent N; R1 to R3 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; n is an integer greater than or equal to 1 and less than or equal to 5; R10 to R24 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, a trisubstituted silyl group with 3 to 18 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms;If n is greater than or equal to 2, a plurality of R1 can be the same or different from each other, a plurality of R2 can be the same or different from each other, and a plurality of R3 can be the same or different from each other; and if 5-n is greater than or equal to 2, a plurality of R10 can be the same or different from each other. Specific examples of the substituent that can be used in the organic compound represented by the general formula (G0) are similar to those described for embodiment 1 and are therefore not described here. The organic compound represented by one of the general formulas (G1) to (G5) described in embodiment 1 can be used as an example of the organic compound having the π-electron-deficient heteroaromatic ring and the trisubstituted silyl group with 3 to 18 carbon atoms and which can be used in the light-emitting device of an embodiment of the present invention. In the case where the organic compound, which has the π-electron-deficient heteroaromatic ring and the trisubstituted silyl group with 3 to 18 carbon atoms, is used in combination with a metal complex for a mixed layer, the metal complex is particularly preferably an organic complex containing an alkali metal. Examples of the organic complex containing an alkali metal include 8-quinolinolato-lithium (abbreviation: Liq), 8-quinolinolato-sodium (abbreviation: Naq), and 8-quinolinolato-potassium (abbreviation: Kq), represented by the structural formulas below, and derivatives thereof. For example, the organic complex preferably has an alkyl group, such as a methyl group, in which case the refractive index may be reduced.Such a substance is preferably contained in a second electron transport layer 114-2, wherein in this case the electron injection from the second electrode 102 can be facilitated and the electron transport property of the second electron transport layer 114-2 can be controlled. In the case where a mixed layer containing the metal complex and the organic compound, which has the π-electron-deficient heteroaromatic ring and the trisubstituted silyl group with 3 to 18 carbon atoms, is used as the electron transport layer, the electron transport layer is preferably in contact with the cathode. Alternatively, an electron injection layer preferably has a thickness of less than or equal to 5 nm when placed between the electron transport layer and the cathode. Therefore, the effect of the electron transport property can be enhanced. Next, structural examples of a light-emitting device of an embodiment of the present invention are described with reference to Figs. 1A to 1F. <<Grundlegende Struktur der Licht emittierenden Vorrichtung> > A basic structure of a light-emitting device is described. Fig. 1A shows a light-emitting device comprising an EL layer between a pair of electrodes. In particular, an EL layer 103 is placed between a first electrode 101 and a second electrode 102. Fig. 1B depicts a light-emitting device having a multilayer structure (tandem structure) in which a plurality of EL layers (two EL layers 103a and 103b in Fig. 1B) are provided between a pair of electrodes, and a charge-generating layer 106 is provided between the EL layers. A light-emitting device with a tandem structure enables the fabrication of a display device that exhibits high efficiency without changing the amount of current. The charge-generating layer 106 has a function for injecting electrons into one of the EL layers 103a and 103b and for injecting holes into the other of the EL layers 103a and 103b when a potential difference is created between the first electrode 101 and the second electrode 102. Therefore, electrons are injected from the charge-generating layer 106 into the EL layer 103a and holes are injected from the charge-generating layer 106 into the EL layer 103b when, as shown in Fig. 1B, a voltage is applied such that the potential of the first electrode 101 can be higher than that of the second electrode 102. It should be noted that the charge-generating layer 106 preferably has a visible light transmittance property with respect to light extraction efficiency (in particular, the charge-generating layer 106 preferably has a visible light transmittance of 40% or higher). The charge-generating layer 106 functions even if it has a lower conductivity than the first electrode 101 and the second electrode 102. Fig. 1C shows a multilayer structure of the EL layer 103 in the light-emitting device of an embodiment of the present invention. In this case, the first electrode 101 is considered to serve as the anode and the second electrode 102 is considered to serve as the cathode. The EL layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, the light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are arranged in that order over the first electrode 101. It should be noted that the light-emitting layer 113 can have a multilayer structure consisting of a plurality of light-emitting layers that emit light of different colors.For example, a light-emitting layer containing a light-emitting substance that emits red light, a light-emitting layer containing a light-emitting substance that emits green light, and a light-emitting layer containing a light-emitting substance that emits blue light can be stacked on top of each other, with one or no layer containing a charge carrier transport material between them. Alternatively, a light-emitting layer containing a light-emitting substance that emits yellow light and a light-emitting layer containing a light-emitting substance that emits blue light can be used in combination. It should be noted that the multilayer structure of the light-emitting layer 113 is not limited to the above.For example, the light-emitting layer 113 can have a multilayer structure consisting of a plurality of light-emitting layers emitting light of the same color. For example, a first light-emitting layer containing a light-emitting substance that emits blue light and a second light-emitting layer containing a light-emitting substance that emits blue light can be stacked on top of each other, with one or no layer containing a charge carrier transport material between them. The structure in which a plurality of light-emitting layers emitting light of the same color are stacked on top of each other can extend the service life; in other words, in some cases, the structure can achieve higher reliability than a single-layer structure. In the case where a plurality of EL layers are stacked as in Fig.As provided in the tandem structure shown in Figure 1B, the layers in each EL layer are arranged sequentially from the anode side, as described above. If the first electrode 101 is the cathode and the second electrode 102 is the anode, the order of the layers in the EL layer 103 is reversed. Specifically, layer 111 above the first electrode 101, which serves as the cathode, is an electron injection layer, layer 112 is an electron transport layer, layer 113 is a light-emitting layer, layer 114 is a hole transport layer, and layer 115 is a hole injection layer. The light-emitting layer 113, contained within the EL layers (103, 103a, and 103b), contains a suitable combination of a light-emitting substance and a variety of other substances such that fluorescent light of a desired color or phosphorescent light of a desired color can be obtained. The variety of EL layers (103a and 103b) in Fig. 1B can exhibit their respective emission colors. In this case, the light-emitting substances and other substances can differ between the light-emitting layers. The light-emitting device of an embodiment of the present invention can have an optical microresonator (microcavity) structure, for example, if in Fig. 1C the first electrode 101 is a reflective electrode and the second electrode 102 is a transflective electrode. Therefore, light from the light-emitting layer 113 in the EL layer 103 can be brought to resonance between the electrodes, and light emitted via the second electrode 102 can be amplified. It should be noted that if the first electrode 101 of the light-emitting device is a reflective electrode having a multilayer structure consisting of a reflective conductive material and a translucent conductive material (a transparent conductive film), optical adjustment can be achieved by controlling the thickness of the transparent conductive film. In particular, if the wavelength of light received from the light-emitting layer 113 is λ, the optical path length between the first electrode 101 and the second electrode 102 (the product of the thickness and the refractive index) is preferably set to mλ / 2 (where m is an integer of 1 or more) or a value close to mλ / 2. To amplify light received from the light-emitting layer 113 at a desired wavelength (λ), the optical path length from the first electrode 101 to a region of the light-emitting layer 113 in which the desired light is received (light-emitting region), and the optical path length from the second electrode 102 to the region of the light-emitting layer 113 in which the desired light is received (light-emitting region), are preferably set to (2m'+1)λ / 4 (m' is an integer of 1 or more) or a value close to (2m'+1)λ / 4. Here, the light-emitting region denotes a region of the light-emitting layer 113 in which holes and electrons recombine. By such optical adjustment, the spectrum of specific monochromatic light obtained from the light-emitting layer 113 can be narrowed and light emission with high color purity can be obtained. In the above case, the optical path length between the first electrode 101 and the second electrode 102 is more precisely the total thickness from a reflection region in the first electrode 101 to a reflection region in the second electrode 102. However, it is difficult to determine the reflection regions in the first electrode 101 and the second electrode 102 precisely; therefore, the above effect can be sufficiently achieved regardless of where the reflection regions in the first electrode 101 and the second electrode 102 are located. Furthermore, the optical path length between the first electrode 101 and the light-emitting layer is more precisely the optical path length between the reflection region in the first electrode 101 and the light-emitting region in the light-emitting layer.However, it is difficult to accurately determine the reflection area in the first electrode 101 and the light-emitting area in the light-emitting layer; therefore, it is assumed that the above effect can be sufficiently achieved regardless of where the reflection area and the light-emitting area are located in the first electrode 101 and the light-emitting layer, respectively. Fig. 1D shows a modification of the multilayer structure depicted in Fig. 1C. Again, the first electrode 101 serves as the anode and the second electrode 102 as the cathode. In this modification, the hole transport layer 112 and the electron transport layer 114 each have a multilayer structure consisting of two layers. In other words, the EL layer 103 has a structure in which a hole injection layer 111, a first hole transport layer 112-1, a second hole transport layer 112-2, a light-emitting layer 113, a second electron transport layer 114-2, a first electron transport layer 114-1, and an electron injection layer 115 are arranged one above the other in that order above the first electrode 101. It should be noted that the light-emitting layer 113 is located between the first electrode 101 and the second electrode 102.The first hole transport layer 112-1 is located between the first electrode 101 and the light-emitting layer 113. The first electron transport layer 114-1 is located between the light-emitting layer 113 and the second electrode 102. The hole injection layer 111 is located between the first electrode 101 and the hole transport layer 112. The electron injection layer 115 is located between the electron transport layer 114 and the second electrode 102. The second hole transport layer 112-2 is located between the first hole transport layer 112-1 and the light-emitting layer 113. In other words, the second electron transport layer 114-2 is located between the light-emitting layer 113 and the first electron transport layer 114-1.In the case where the EL layer 103 has such a multilayer structure, one or more of the electron injection layer 115, the electron transport layer 114, and the light-emitting layer 113 preferably contain the organic compound represented by one of the general formulas (G1) to (G5). In particular, the electron transport layer 114 preferably contains the organic compound represented by one of the general formulas (G1) to (G5), in which case higher efficiency and a lower operating voltage of the light-emitting device can be expected. The second hole transport layer 112-2 is provided to prevent, for example, electrons from passing from the light-emitting layer 113 to the side of the first electrode 101. Accordingly, the second hole transport layer 112-2 can also be called an electron-blocking layer. The second electron transport layer 114-2 is provided, for example, to prevent holes from passing from the light-emitting layer 113 to the side of the second electrode 102. Accordingly, the second electron transport layer 114-2 can also be called a hole-blocking layer. The organic compound, represented by one of the general formulas (G1) to (G5), can be used in the second electron transport layer 114-2 in contact with the light-emitting layer 113.In particular, the first electron transport layer 114-1 preferably contains the organic compound represented by one of the general formulas (G1) to (G5), in which case a higher efficiency and a lower operating voltage of the light-emitting device can be expected. The light-emitting device shown in Fig. 1E is a tandem-structured light-emitting device. Due to its microcavity structure, light (monochromatic light) of different wavelengths can be extracted from the EL layers (103a and 103b). Therefore, it is unnecessary to form separate EL layers to obtain a variety of emission colors (e.g., red, green, and blue). Consequently, high resolution can be easily achieved. A combination with color layers (color filters) is also possible. Furthermore, the emission intensity of light with a specific wavelength can be increased in the forward direction, thereby reducing power consumption. The light-emitting device shown in Fig. 1F is an example of the light-emitting device with the tandem structure shown in Fig. 1B and comprises, as shown in Fig. 1F, three EL layers (103a, 103b, and 103c) arranged one above the other, with charge-generating layers (106a and 106b) positioned between them. The three EL layers (103a, 103b, and 103c) each comprise light-emitting layers (113a, 113b, and 113c), and the emission colors of the light-emitting layers can be freely selected.For example, light-emitting layer 113a can emit blue light, light-emitting layer 113b can emit red light, green light or yellow light and light-emitting layer 113c can emit blue light; or light-emitting layer 113a can emit red light, light-emitting layer 113b can emit blue light, green light or yellow light, and light-emitting layer 113c can emit red light. In the light-emitting device of an embodiment of the present invention, the first electrode 101 and / or the second electrode 102 are translucent electrodes (e.g., transparent electrodes or transflective electrodes). In the case of a transparent electrode, the transparent electrode has a visible light transmittance of 40% or higher. In the case of a translucent electrode, the transflective electrode has a visible light reflectance of 20% or higher and 80% or lower, preferably 40% or higher and 70% or lower. These electrodes preferably have a resistivity of 1 × 10⁻² Ωcm or less. If, in the light-emitting device of an embodiment of the present invention, the first electrode 101 or the second electrode 102 is a reflective electrode, the reflectance for visible light of the reflective electrode is greater than or equal to 40% and less than or equal to 100%, preferably greater than or equal to 70% and less than or equal to 100%. This electrode preferably has a resistivity of 1 × 10⁻² Ωcm or less. <<Konkrete Struktur der Licht emittierenden Vorrichtung> > Next, a specific structure of the light-emitting device of an embodiment of the present invention will be described. The description is given here using Fig. 1E, which depicts the tandem structure. It should be noted that the structure of the EL layer also applies to the structure of the light-emitting devices with a single-layer structure in Fig. 1A and Fig. 1C. If the light-emitting device in Fig. 1E has a microcavity structure, the first electrode 101 is configured as a reflective electrode and the second electrode 102 is configured as a transflective electrode. Therefore, a single-layer or a multi-layer structure can be configured using one or more types of desired electrode materials. It should be noted that the second electrode 102 is configured after the formation of the EL layer 103b, using a suitably selected material. <erste Elektrode und zweite Elektrode> Any of the following materials, in a suitable combination, can be used for the first electrode 101 and the second electrode 102, provided that the aforementioned functions of the electrodes can be fulfilled. For example, a metal, an alloy, an electrically conductive compound, a mixture thereof, and the like can be appropriately used. In particular, an In-Sn oxide (also known as ITO), an In-Si-Sn oxide (also known as ITSO), an In-Zn oxide, or an In-W-Zn oxide can be used. Furthermore, it is possible to use a metal, such as... B. Aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y) or neodymium (Nd), or an alloy containing a suitable combination of any of these metals.It is also possible to use an element of Group 1 or an element of Group 2 of the periodic table that has not been described above (e.g. lithium (Li), cesium (Cs), calcium (Ca) or strontium (Sr)), a rare earth metal such as europium (Eu) or ytterbium (Yb), an alloy containing a suitable combination of any of these elements, graphene or the like. In the light-emitting device shown in Fig. 1E, when the first electrode 101 is the anode, a hole injection layer 111a and a hole transport layer 112a of the EL layer 103a are sequentially arranged over the first electrode 101 by a vacuum evaporation process. After the EL layer 103a and the charge generation layer 106 have been formed, a hole injection layer 111b and a hole transport layer 112b of the EL layer 103b are similarly arranged sequentially over the charge generation layer 106. <lochinjektionsschicht> The hole injection layers (111, 111a and 111b) inject holes from the first electrode 101 serving as the anode and the charge generation layers (106, 106a and 106b) into the EL layers (103, 103a and 103b) and contain an organic acceptor material and a material with high hole injection properties. The organic acceptor material allows holes to be created in another organic compound whose HOMO level is close to the LUMO level of the organic acceptor material when charge separation is induced between the organic acceptor material and the organic compound. Therefore, a compound with an electron-withdrawing group (for example, a halogen group or a cyano group), such as a quinodimethane derivative, a chloranil derivative, or a hexaazatriphenylene derivative, can be used as the organic acceptor material.Examples of the organic acceptor material include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyanonaphthoquinodimethane (abbreviation: F6-TCNNQ) and 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile. It should be noted that among organic acceptor materials, a compound in which electron-withdrawing groups are bonded to fused aromatic rings, each comprising a multitude of heteroatoms, such as HAT-CN, is particularly preferred because it exhibits high acceptor properties and stable film quality against heat. Additionally, a [3]radialene derivative with an electron-withdrawing group (in particular a cyano group or a halogen group, such as...) is preferred.a fluorine group), which has a very high electron accepting property; specific examples include α,α',α"-1,2,3-cyclopropanetriylidentris[4-cyano-2,3,5,6-tetrafluorobenzolacetonitrile], α,α',α"-1,2,3-cyclopropanetriylidentris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzolacetonitrile] and α,α',α"-1,2,3-cyclopropanetriylidentris[2,3,4,5,6-pentafluorobenzolacetonitrile]. A material with high hole injection properties can be an oxide of a metal belonging to groups 4 to 8 of the periodic table (e.g., a transition metal oxide such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, or manganese oxide). Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among the aforementioned oxides, molybdenum oxide is preferred because it is stable in atmospheric air, has low hygroscopic properties, and is easy to handle. Other examples include a perylenetetracarboxylic acid derivative, such as...Dichinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,3,8,9,14,15-hexafluorodichinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA-F6), 3,4,9,10-perylenetetracarboxylic diimide (abbreviation: PTCDI) or 3,4,9,10-perylenetetracarboxylbisbenzimidazole (abbreviation: PTCBI); (C60-Ih)-[5,6]fullerene (abbreviation: C60); (C70-D5h)-[5,6]fullerene (abbreviation: C70); an organic compound, such as phthalocyanine (abbreviation: H2Pc); and a metal phthalocyanine containing copper, zinc, cobalt, iron, chromium, nickel, or the like, or a derivative thereof, such as copper phthalocyanine (abbreviation: CuPc), zinc phthalocyanine (abbreviation: ZnPc), cobalt phthalocyanine (abbreviation: CoPc), iron phthalocyanine (abbreviation: FePc), tin phthalocyanine (abbreviation: SnPc), tin oxide phthalocyanine (abbreviation: SnOPc), titanium oxide phthalocyanine (abbreviation: TiOPc), or vanadium oxide phthalocyanine (abbreviation: VOPc). A phthalocyanine-based metal complex, such as...CuPc or ZnPc, and 2,3,8,9,14,15-hexafluorodichinoxalino[2,3-a:2',3'-c]phenazine are particularly preferred. Among these materials, CuPc and ZnPc are preferred because they are inexpensive and have advantageous properties. The use of ZnPc, which has a low diffusion coefficient with respect to silicon, reduces the likelihood that metal diffusion into a semiconductor will adversely affect the semiconductor properties; consequently, ZnPc is particularly suitable for a display device fabricated using a silicon semiconductor. Other examples include aromatic amine compounds, which are low-molecular-weight compounds, such as... B. 4,4',4''-Tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-Tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA), 4,4'-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-Bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD), 1,3,5-Tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-Bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2) and 3-[N-(1-Naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1). Other examples include high-molecular-weight compounds (e.g., oligomers, dendrimers, and polymers), such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino} phenyl)methacrylamide] (abbreviation: PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: poly-TPD). Alternatively, a high-molecular-weight compound to which an acid has been added can be used, such as poly(3,4-ethylenedioxythiophene) / polystyrenesulfonic acid (abbreviation: PEDOT / PSS) or polyaniline / polystyrenesulfonic acid (abbreviation: PAni / PSS). A material with high hole injection properties can be a mixed material containing a hole transport material and the organic acceptor material (electron acceptor material) described above. In this case, the organic acceptor material extracts electrons from the hole transport material, creating holes in the hole injection layer 111. These holes are then injected through the hole transport layer 112 into the light-emitting layer 113. It should be noted that the hole injection layer 111 can be configured as a single-layer structure using a mixed material containing a hole transport material and an organic acceptor material (electron acceptor material), or as a multi-layer structure consisting of a layer containing a hole transport material and a layer containing an organic acceptor material (electron acceptor material). The hole transport material preferably exhibits a hole mobility of greater than or equal to 1 × 10⁻⁶ cm² / Vs when the square root of the electric field strength [V / cm] is 600. It should be noted that other substances can also be used, provided they have higher hole transport properties than electron transport properties. Materials with high hole transport properties, such as a compound with a π-electron-rich heteroaromatic ring (e.g., a carbazole derivative, a furan derivative, and a thiophene derivative) and an aromatic amine (an organic compound with an aromatic amine skeleton), are preferred as hole transport materials. Examples of the carbazole derivative (an organic compound with a carbazole ring) include a bicarbazole derivative (e.g., a 3,3'-bicarbazole derivative) and an aromatic amine with a carbazolyl group. Specific examples of the bicarbazole derivative (e.g., a 3,3'-bicarbazole derivative) include 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bi-9H-carbazole (abbreviation: βNCCP), 9-(3-Biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-Biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCBP) and 9,9'-Di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation: BisßNCz). Konkrete Beispiele für das aromatische Amin mit einer Carbazolyl-Gruppe umfassen 4-Phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamin (Abkürzung: PCBA1BP), N-(Biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-amin (Abkürzung: PCBiF), N-(Biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amin (Abkürzung: PCBBiF), N-[4-(9-Phenyl-9H-carbazol-3-yl)phenyl]bis(9,9-dimethyl-9H-fluoren-2-yl)amin (Abkürzung: PCBFF), N-(1,1'-Biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-4-amin, N-[4-(9-Phenyl-9H-carbazol-3-yl)phenyl]-(9,9-dimethyl-9H-fluoren-2-yl)-9,9-dimethyl-9H-fluoren-4-amin, N-(1,1'-Biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-diphenyl-9H-fluoren-2-amin, N-(1,1'-Biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-diphenyl-9H-fluoren-4-amin, N-(1,1'-Biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi(9H-fluoren)-2-amin, N-(1,1'-Biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi(9H-fluoren)-4-amin, N-[4-(9-Phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':3',1"-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-2-amin, N-[4-(9-Phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':4',1"-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-2-amin, N-[4-(9-Phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':3',1"-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-4-amin, N-[4-(9-Phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':4',1"-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-4-amin, 4,4'-Diphenyl-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamin (Abkürzung: PCBBi1BP), 4-(1-Naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamin (Abkürzung: PCBANB), 4,4'-Di(1-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamin (Abkürzung: PCBNBB), 4-Phenyldiphenyl-(9-phenyl-9H-carbazol-3-yl)amin (Abkürzung: PCA1BP), N,N'-Bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzol-1,3-diamin (Abkürzung: PCA2B), N,N',N"-Triphenyl-N,N',N'-tris(9-phenylcarbazol-3-yl)benzol-1,3,5-triamin (Abkürzung: PCA3B), 9,9-Dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-Phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluoren]-2-amine (abbreviation: PCBASF), PCzPCA1, PCzPCA2, PCzPCN1, 3-[N-(4-Diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3,6-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), 3,6-Bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTPN2), N-(9,9-spirobi[9H-fluorene]-2-yl)-N,9-diphenylcarbazole-3-amine (abbreviation: PCASF), N-[4-(9H-carbazole-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazole-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA2F) and 4,4',4"-tris(carbazole-9-yl)triphenylamine (abbreviation: TCTA)., Other examples of the carbazole derivative include 9-[4-(9-phenyl-9H-carbazol-3-yl)-phenyl]phenanthrene (abbreviation: PCPPn), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA) and 9-[3-(Triphenylsilyl)phenyl]-3,9'-bi-9H-carbazole (abbreviation: PSiCzCz). Specific examples of the furan derivative (an organic compound with a furan ring) include 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Specific examples of the thiophene derivative (an organic compound with a thiophene ring) include 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV). Specific examples of the aromatic amine include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD), N,N'-diphenyl-N,N-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluoren]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), N-(9,9-Dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-Dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), N-(9,9-Spirobi[9H-fluoren]-2-yl)-N,N',N'-triphenyl-1,4-phenyldiamine (abbreviation: DPASF), N,N'-Diphenyl-N,N'-bis(4-diphenylaminophenyl)spirobi[9H-fluoren]-2,7-diamine (abbreviation: DPA2SF), 4,4',4"-Tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: 1'-TNATA), TDATA, 4,4',4"-Tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: m-MTDATA), N,N'-Di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), DPAB, DNTPD, DPA3B, N-(4-Biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-Bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-Bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4"-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-Bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-Bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-Bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-Bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(Dibenzothiophen-4-yl)phenyl]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-Naphthyl)-4',4"-diphenyltriphenylamine (Abbreviation: BBAßNB), 4-[4-(2-Naphthyl)phenyl]-4',4"-diphenyltriphenylamine (Abbreviation: BBAßNBi), 4,4'-Diphenyl-4"-([2,1'-binaphthyl]-6-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-Diphenyl-4"-([2,1'-binaphthyl]-7-yl)triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-Diphenyl-4"-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-Diphenyl-4"-([2,2'-binaphthyl]-6-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-Diphenyl-4"-([2,2'-binaphthyl]-7-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-Diphenyl-4"-([1,2'-binaphthyl]-4-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4"-([1,2'-binaphthyl]-5-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-Biphenylyl)-4'-(2-naphthyl)-4"-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-Biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4"-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-Biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4"-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-Phenyl-4'-(1-naphthyl)-triphenylamine (abbreviation: αNBA1BP), 4,4'-Bis(1-naphthyl)triphenylamine (abbreviation: αNBB1 BP), 4,4'-Diphenyl-4"-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP),4'-[4-(3-Phenyl-9H-carbazol-9-yl)phenyl]tris(1,1'-biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(Carbazol-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4"-phenyltriphenylamine (abbreviation: YGTBißNB), N-[4-(9-Phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF) N,N-Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(Biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(Biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-Naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-Phenyl-4'-[4-(9-phenylfluorene-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), N,N-Bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-Bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-Bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine and N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine., Unlike the above, PVK, PVTPA, PTPDMA, poly-TPD, or similar high-molecular-weight compounds (e.g., oligomers, dendrimers, or polymers) can be used as hole transport materials. Alternatively, a high-molecular-weight compound with added acid, such as PEDOT / PSS or PAni / PSS, can be used. It should be noted that the hole transport material is not limited to the above examples and any of the various known materials can be used alone or in combination as the hole transport material. The hole injection layers (111, 111a and 111b) can be formed by any of the known film formation methods, such as a vacuum evaporation method. <lochtransportschicht> The hole transport layers (112, 112a, and 112b) transport the holes injected by the hole injection layers (111, 111a, and 111b) from the first electrode 101 to the light-emitting layers (113, 113a, and 113b). It should be noted that the hole transport layers (112, 112a, and 112b) each contain a hole transport material. Therefore, the hole transport layers (112, 112a, and 112b) can be formed using any of the hole transport materials that can be used for the hole injection layers (111, 111a, and 111b). It should be noted that in the light-emitting device of an embodiment of the present invention, the organic compound used for the hole transport layers (112, 112a and 112b) can also be used for the light-emitting layers (113, 113a and 113b). The same organic compound is preferably used for both the hole transport layers (112, 112a and 112b) and the light-emitting layers (113, 113a and 113b), in which case holes can be efficiently transported from the hole transport layers (112, 112a and 112b) to the light-emitting layers (113, 113a and 113b). <Licht emittierende Schicht> The light-emitting layers (113, 113a, and 113b) contain a light-emitting substance. It should be noted that the light-emitting substance that can be used in the light-emitting layers (113, 113a, and 113b) can be any substance whose emission color is blue, violet, blue-violet, green, yellow-green, yellow, orange, red, or the like. If a variety of light-emitting layers are provided, the use of different light-emitting substances in the light-emitting layers allows different emission colors to be represented (e.g., white light emission obtained by a combination of complementary emission colors). If a variety of light-emitting layers are provided, the light-emitting layers can also represent the same color.A structure in which multiple light-emitting layers, all emitting light of the same color, are stacked on top of each other can, in some cases, achieve higher reliability than a single-layer structure. Furthermore, a multi-layer structure, in which a light-emitting layer contains two or more types of light-emitting substances, can be used. The light-emitting layers (113, 113a and 113b) can each contain, in addition to a light-emitting substance (a guest material), one or more types of organic compounds (e.g. a host material). In the case where a plurality of host materials are used in the light-emitting layers (113, 113a, and 113b), a second host material is preferably a substance exhibiting a larger energy gap than those of a known guest material and a first host material. Preferably, the lowest singlet excitation energy level (S1 level) of the second host material is higher than that of the first host material, and the lowest triplet excitation energy level (T1 level) of the second host material is higher than that of the guest material. In such a structure, an exciplex can be formed by the two types of host materials.To efficiently form an exciplex, a compound that readily accepts holes (a hole transport material) and a compound that readily accepts electrons (an electron transport material) are preferably combined. With the above structure, high efficiency, low voltage, and a long lifetime can be achieved simultaneously. Organic compounds used as host materials (including the first and second host materials) include hole transport materials, which can be used for the hole transport layers (112, 112a, and 112b) described above, and electron transport materials, which can be used for the electron transport layers (114, 114a, and 114b) described below, provided they meet the requirements of the host material used in the light-emitting layer. Another example is an exciplex formed by two or more types of organic compounds (the first and second host materials).An exciplex whose excited state is formed by two or more types of organic compounds exhibits a very small energy difference between the S1 level and the T1 level and serves as a thermally activated delayed fluorescent (TADF) material capable of converting triplet excitation energy to singlet excitation energy. In an example of a preferred combination of two or more types of organic compounds forming an exciplex, one compound of the two or more types of organic compounds has a π-electron-deficient heteroaromatic ring, and the other compound has a π-electron-rich heteroaromatic ring. A phosphorescent substance, such as an iridium-, rhodium-, or platinum-based organometallic complex or a metal complex, can be used as a compound in the combination to form an exciplex.The organic compound with a trisubstituted silyl group, as described in embodiment 1 and this embodiment, has an electron transport property and can therefore be used as a host material. There is no particular restriction regarding the light-emitting substances that can be used for the light-emitting layers (113, 113a and 113b), and a light-emitting substance that converts the singlet excitation energy into light in the visible light range, or a light-emitting substance that converts the triplet excitation energy into light in the visible light range, can be used. <<Licht emittierende Substanz, die die Singulett-Anregungsenergie in Licht umwandelt> > Examples of light-emitting substances that convert singlet excitation energy into light emission and can be used in the light-emitting layers (113, 113a, and 113b) include the following substances that emit fluorescent light (fluorescent substances): a pyrene derivative, an anthracene derivative, a triphenylene derivative, a fluorene derivative, a carbazole derivative, a dibenzothiophene derivative, a dibenzofuran derivative, a dibenzoquinoxaline derivative, a quinoxaline derivative, a pyridine derivative, a pyrimidine derivative, a phenanthrene derivative, and a naphthalene derivative. A pyrene derivative is particularly preferred because it has a high emission quantum yield.Specific examples of the pyrene derivative include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), N,N'-bis(dibenzothiophene-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02) and N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03). Furthermore, it is possible, for example, to form 5,6-Bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-Bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-Bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-Diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), 4-(10-Phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), 4-[4-(10-Phenyl-9-anthryl)phenyl]-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA), Perylene, 2,5,8,11-Tetra-tert-butylperylene (abbreviation: TBP), N,N"-(2-tert-Butylanthracene-9,10-diyldi-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,9-Diphenyl-N-[4-(9,to use 10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: 2PCAPPA) and N-[4-(9,10-Diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA). It is also possible, for example, to use N-[9,10-Bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-Diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-Bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABP}hA), 9,10-Bis(biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthrace-2-amine (abbreviation: 2YGABPhA), N,N,9-Triphenylanthracene-9-amine (Abbreviation: DPhAPhA), Coumarin 545T, N,N'-Diphenylquinacridone (Abbreviation: DPQd), Rubren, 5,12-Bis(biphenyl-4-yl)-6,11-diphenyltetracene (Abbreviation: BPT), 2-(2-{2-[4-(Dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanenitrile (Abbreviation: DCM1), 2-{2-Methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene} propanenitrile (Abbreviation: DCM2), N,N,N',N'-Tetrakis(4-methylphenyl)tetracene-5,11-diamine (Abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhAFD), 2-{2-Isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1 H,5H-benzo[(ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanenitrile (abbreviation: DCJTI), 2-{2-tert-Butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanenitrile (abbreviation: DCJTB), 2-(2,6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanenitrile (abbreviation: BisDCM), 2-{2,6-Bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene} propanenitrile (abbreviation: BisDCJTM), 1,6BnfAPrn-03, N,N'-Diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02) or 3,10-Bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02). In particular, for example, a pyrenediamine compound such as 1,6FLPAPrn, 1,6mMemFLPAPrn or 1,6BnfAPrn-03,be used., A condensed heteroaromatic compound containing nitrogen and boron, in particular a compound with a diaza-boranaphtho-anthracene framework, emits blue light with high color purity and a narrow emission spectrum and can therefore be used appropriately.Examples of the compound include 5,9-Diphenyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: DABNA-1), 9-(Biphenyl-3-yl)-N,N,5,11-tetraphenyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborine-3-amine (abbreviation: DABNA-2), 2,12-Di(tert-butyl)-5,9-di(4-tert-butylphenyl)-N,N-diphenyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborine-7-amine (abbreviation: DPhAtBu4DABNA), 2,12-Di(tert-butyl)-N,N,5,9-tetra(4-tert-butylphenyl)-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborin-7-amine (abbreviation: tBuDPhA-tBu4DABNA), 2,12-Di(tert-butyl)-5,9-di(4-tert-butylphenyl)-7-methyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborin (abbreviation: Me-tBu4DABNA), N7,N7,N13,N13,5,9,11,15-Octaphenyl-5H,9H,11H,15H-[1,4]benzazaborino[2,3,4-kl][1,4]benzazaborino[4',3',2':4,5][1,4]benzazaborino[3,2-b]phenazaborin-7,13-diamine (abbreviation: v-DABNA) and 2-(4-tert-Butylphenyl)benz[5,6]indolo[3,2,1-jk]benzo[b]carbazole (abbreviation: tBuPBibc). In addition to the above compounds, a compound with an indole skeleton, such as... B. 9,10,11-Tris[3,6-bis(1,1-dimethylethyl)-9H-carbazolyl-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzazaborino[2,3,4-kl]phenazaborin (abbreviation: BBCz-G), 9,11-Bis[3,6-bis(1,1-dimethylethyl)-9H-carbazolyl-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzazaborino[2,3,4-kl]phenazaborin (abbreviation: BBCz-Y) or the like suitable for use. <<Licht emittierende Substanz, die die Triplett-Anregungsenergie in eine Lichtemission umwandelt> > Examples of light-emitting substances that convert triplet excitation energy into light and can be used in the light-emitting layer 113 include substances that emit phosphorescent light (phosphorescent substances) and TADF materials that exhibit thermally activated delayed fluorescence. A phosphorescent substance is a compound that emits phosphorescence light, but no fluorescence light, at temperatures higher than or equal to a low temperature (e.g., 77 K) and lower than or equal to room temperature (i.e., higher than or equal to 77 K and lower than or equal to 313 K). The phosphorescent substance preferably contains a metal element with a high spin-orbit interaction and may, for example, be an organometallic complex, a metal complex (platinum complex), or a rare-earth metal complex. In particular, the phosphorescent substance preferably contains a transition metal element.The phosphorescent substance preferably contains a platinum group element (ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir) or platinum (Pt)), in particular iridium, in which case the probability of the direct transition between the singlet ground state and the triplet excitation state can be increased. <<phosphoreszierende Substanz (mit Peak bei Wellenlänge von 450 nm bis 570 nm: Blau oder Grün> > Examples of phosphorescent substances that emit blue or green light and whose emission spectrum has a peak wavelength higher than or equal to 450 nm and lower than or equal to 570 nm include the following substances. Examples include organometallic complexes with a 4H-triazole ring, such as... B. Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), Tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), Tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b)3]) and Tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPr5btz)3]); organometallic complexes with a 1H-triazole ring, such as Tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3] and Tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]); organometallic complexes with an imidazole ring, such asfac-Tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim)3]), Tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]) and Tris(2-{1-[2,6-bis(1-methylethyl)phenyl]-1H-imidazol-2-yl-κN3}-4-cyanophenyl-κC)iridium(III) (abbreviation: CNImIr); organometallic complexes with a benzimizazolide skeleton, such as... B. Tris[(6-tert-butyl-3-phenyl-2H-imidazo[4,5-b]pyrazin-1-yl-κC2)phenyl-κC]iridium(III) (abbreviation: [Ir(cb)3]); organometallic complexes in which a phenylpyridine derivative with an electron-withdrawing group is a ligand, such asBis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III)tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), Bis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III)picolinate (abbreviation: FIrpic), Bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C2'} iridium(III)picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), Bis[2-(4',6'difluorophenyl)pyridinato-N,C2']iridium(III)acetylacetonate (abbreviation: Flr(acac)); and platinum complexes, such as... B. (2-{3-[3-(3,5-Di-tert-butylphenyl)benzimidazol-1-yl-2-ylidene-κC2]phenoxy-κC2}-9-(4-tert-butyl-2-pyridinyl-κN)carbazol-2,1-diyl-κC1)platin(II) (abbreviation: PtON-TBBI). Alternatively, a compound obtained by substituting some of the hydrogen with deuterium in any of these compounds can be used. <<phosphoreszierende Substanz (mit Peak bei Wellenlänge von 495 nm bis 590 nm: Grün oder Gelb)> > Examples of phosphorescent substances that emit green or yellow light and whose emission spectrum has a peak wavelength higher than or equal to 495 nm and lower than or equal to 590 nm include the following substances. Examples of the phosphorescent substance include organometallic iridium complexes with a pyrimidine ring, such as... B. Tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), Tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (Acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (Acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (Acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (Acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]), (Acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviation: [Ir(dmppm-dmp)2(acac)]) and (Acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]); organometallic iridium complexes with a pyrazine ring,such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]) and (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]); organometallic iridium complexes with a pyridine ring, such as... B. Tris(2-phenylpyridinato-N,C2')iridium(III) (abbreviation: [Ir(ppy)3]), Bis(2-phenylpyridinato-N,C2')iridium(III)acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), Bis(benzo[h]quinolinato)iridium(III)acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), Tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), Tris(2-phenylquinolinato-N,C2')iridium(III) (abbreviation: [Ir(pq)3]), Bis(2-phenylquinolinato-N,C2')iridium(III)acetylacetonate (abbreviation: [Ir(pq)2(acac)]), Bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-phenyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(4dppy)]), Bis[2-(2-pyridinyl-κN)phenyl-κ][2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC], [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-h]pyridin-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (Abkürzung: Ir(5mppy-d3)2(mbfpypy-d3)), {2-(Methyl-ds)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofuro[2,3-b]pyridin-7-yl-κC} bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC}iridium(III) (Abkürzung: Ir(5mtpy-d6)2(mbfpypy-iPr-d4)), [2-(Methyl-d3)-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridin-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (Abkürzung: Ir(ppy)2(mbfpypy-d3)), [2-(4-Methyl-5-phenyl-2-pyridinyl-κN)phenyl-xC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (Abkürzung: Ir(ppy)2(mdppy)), [2-(4-d3-Methyl-5-phenyl-2-pyridinyl-κN2)phenyl-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (Abkürzung: [Ir(5mppy-d3)2(mdppy-d3)]), [2-Methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridin-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium((III) (Abkürzung: [Ir(ppy)2(mbfpypy)]) und Tris{2-[5-(methyl-d3)-4-phenyl-2-pyridinyl-κN]phenyl-κC}iridium(III) (Abkürzung: Ir(5m4dppy-d3)3); metallorganische Komplexe,such as bis(2,4-diphenyl-1,3-oxazolato-N,C2')iridium(III)acetylacetonate (abbreviation: [Ir(dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl]pyridinato-N,C2'}iridium(III)acetylacetonate (abbreviation: [Ir(p-PF-ph)2(acac)]) and bis(2-phenylbenzothiazolato-N,C2')iridium(III)acetylacetonate (abbreviation: [Ir(bt)2(acac)]); organometallic platinum complexes, such as... B. (2-{1-(5-tert-butylbiphenyl-2-yl)-4-[3-tert-butyl-5-(4-phenyl-2-pyridinyl-κN)phenyl-κC6]-2-benzimidazolyl-κN3}-4,6-di-terl-butylphenolato-κO)platin(II) (abbreviation: Pt(tBudppymmtBubiz-tBubp)) and [2-(4-(3,5-di-tert-butylphenyl)-6-{3-[4-(5'-tert-butyl[1,1':3',1"-terphenyl]-2'-yl)-2-pyridinyl-κ[Aphenyl-κC2}-2-pyridinyl-κN)phenolato-κO]platin(II) (abbreviation: Pt(4tButpppypyp-mmtBup)); and a Rare earth metal complex, such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]). Alternatively, a compound can also be used,which is obtained by substituting some of the hydrogen with deuterium in any one of these compounds. <<phosphoreszierende Substanz (mit Peak bei Wellenlänge von 570 nm bis 750 nm: Gelb oder Rot)> > Examples of phosphorescent substances that emit yellow or red light and whose emission spectrum has a peak wavelength higher than or equal to 570 nm and lower than or equal to 750 nm include the following substances. Examples of the phosphorescent substance include organometallic complexes with a pyrimidine ring, such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]) and (dipivaloylmethanato)bis[4,6-di(naphthalen-1-yl)pyrimidinato]iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]); organometallic complexes with a pyrazine ring, such as... B. (Acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), Bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), Bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC} (2,6-dimethyl-3,5-heptanedionato-κ2O,O')iridium(III) (abbreviation: [Ir(dmdppr-P)2(dibm)]), Bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC} (2,2,6,6-tetramethyl-3,5-heptanedionato-κ2O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmCP)2(dpm)]), Bis{2-[5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]-4,6-dimethylphenyl-κC}(2,2',6,6'-tetramethyl-3,5-heptanedionato-κ2O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmp)2(dpm)]), (Acetylacetonato)bis(2-methyl-3-phenylquinoxalinato-N,C2')iridium(III) (abbreviation: [Ir(mpq)2(acac)]), (Acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C2')iridium(III) (abbreviation: [Ir(dpq)2(acac)]) and (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]); organometallic complexes with a pyridine ring, such as tris(1-phenylisoquinolinato-N,C2')iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C2')iridium(III)acetylacetonate (abbreviation: [Ir(piq)2(acac)]) and bis[4,6-dimethyl-2-(2-quinolinyl-κN)phenyl-κC](2,4-pentanedionato-κ2O,O')iridium(III) (abbreviation: [Ir(dmpqn)2(acac)]); organometallic complexes each with a pyridine ring, such as (3,7-diethyl-4,6-nonandionato-κO4,κO6)bis[2,4-dimethyl-6-[7-(1-methylethyl)-1-isoquinolinyl-κN]phenyl-κC]iridium(III) and (3,7-diethyl-4,6-nonandionato-κO4, κO6)bis[2,4-dimethyl-6-[5-(1-methylethyl)-2-quinolinyl-κN]phenyl-κC]iridium(III); a platinum complex, such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatin(II) (abbreviation: [PtOEP]); and rare earth metal complexes, such as... B. Tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]) and Tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]). Alternatively, a compound obtained by substituting some of the hydrogen with deuterium in any of these compounds can be used. < <tadf-material>> Any of the materials described below can be used as the TADF material. The TADF material is a material that exhibits a small energy difference between its S1 level and its T1 level (preferably less than or equal to 0.20 eV), enables the upconversion of a triplet excitation state to a singlet excitation state (i.e., reverse intersystem crossing) using low thermal energy, and efficiently emits light (fluorescence light) from the singlet excitation state. Thermally activated delayed fluorescence is efficiently obtained under the condition that the energy difference between the triplet excitation energy level and the singlet excitation energy level is greater than or equal to 0.00 eV and less than or equal to 0.20 eV, preferably greater than or equal to 0.00 eV and less than or equal to 0.10 eV.Delayed fluorescent light from TADF material refers to light emission that exhibits a spectrum similar to that of normal fluorescent light and a very long lifetime. The lifetime is greater than or equal to 1 × 10⁻⁶ seconds or greater than or equal to 1 × 10⁻³ seconds. It should be noted that the TADF material can also be used as an electron transport material, hole transport material, or host material. Examples of TADF material include fullerene, a derivative thereof, an acridine derivative such as proflavin, and eosin. Other examples include a metal-containing porphyrin, such as a porphyrin containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of metal-containing porphyrins include a protoporphyrin tin fluoride complex (abbreviation: SnF2(Proto IX)), a mesoporphyrin tin fluoride complex (abbreviation: SnF2(Meso IX)), a hematoporphyrin tin fluoride complex (abbreviation: SnF2(Hämato IX)), a coproporphyrin tetramethyl ester tin fluoride complex (abbreviation: SnF2(Copro III-4Me)), an octaethylporphyrin tin fluoride complex (abbreviation: SnF2(OEP)), an etioporphyrin tin fluoride complex (abbreviation: SnF2(Etio I)) and an octaethylporphyrin platinum chloride complex (abbreviation: PtCl2OEP). Furthermore, a heteroaromatic compound can comprise a π-electron-rich heteroaromatic compound and a π-electron-poor heteroaromatic compound, such as:2-(Biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-Dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), Bis[4-(9,9-dimethyl-9,10-dihydroacridin)phenyl]sulfone (abbreviation: DMAC-DPS), 10-Phenyl-10H,10'H-spiro[acridin-9,9'-anthracene]-10'-one (abbreviation: ACRSA), 4-(9'-Phenyl-[3,3'-bi-9H-carbazole]-9-yl)benzofuro[3,2-d]pyrimidine (abbreviation: 4PCCzBfpm), 4-[4-(9'-Phenyl-[3,3'-bi-9H-carbazole]-9-yl)phenyl]benzofuro[3,2-d]pyrimidine (abbreviation: 4PCCzPBfpm) or 9-[3-(4,6-Diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02). It should be noted that a substance in which a π-electron-rich heteroaromatic compound is directly bonded to a π-electron-poor heteroaromatic compound is particularly preferred, since both the donor property of the π-electron-rich heteroaromatic compound and the acceptor property of the π-electron-poor heteroaromatic compound are enhanced, and the energy difference between the singlet and triplet excitation states becomes small. A TADF material in which the singlet and triplet excitation states are in thermal equilibrium (TADF100) can be used. Since such a TADF material enables a short emission lifetime (excitation lifetime), the efficiency of a light-emitting device is less likely to be reduced in a high luminance range. In addition to the above, another example of a material with a function for converting triplet excitation energy into light emission is a nanostructure of a transition metal compound with a perovskite structure. In particular, a nanostructure of a metal halide perovskite material is preferred. The nanostructure is preferably a nanoparticle or a nanorod. The organic compound (e.g. host material) used in combination with the light-emitting substance (guest material) described above in the light-emitting layers (113, 113a and 113b) can be one or more types selected from substances with a larger energy gap than the light-emitting substance (the guest material). <<Wirtsmaterial für Fluoreszenz> > In the case where the light-emitting substance used in the light-emitting layers (113, 113a and 113b) is a fluorescent substance, an organic compound (a host material) used in combination with the fluorescent substance is preferably an organic compound having a high energy level in a singlet excitation state and a low energy level in a triplet excitation state, or an organic compound with high fluorescence quantum yield. Therefore, for example, the hole transport material (described above) and the electron transport material (described below) shown in this embodiment can be used, provided they are organic compounds that satisfy such a condition.Furthermore, the organic compound described in embodiment 1 and this embodiment can be used with a trisubstituted silyl group. With regard to a preferred combination with the light-emitting substance (the fluorescent substance), examples of the organic compound (the host material), some of which overlap with the specific examples above, include condensed polycyclic aromatic compounds, such as an anthracene derivative, a tetracene derivative, a phenanthrene derivative, a pyrene derivative, a chrysene derivative, and a dibenzo[g,p]chrysene derivative. Specific examples of the organic compound (the host material), preferably used in combination with the fluorescent substance, include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: DPCzPA), PCPN, 9,10-diphenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation: DPhPA), YGAPA, PCAPA, N,9-Diphenyl-N-{4-[4-(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazol-3-amine (abbreviation: PCAPBA), N-(9,10-Diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), 6,12-Dimethoxy-5,11-diphenylchrysene, N,N,N',N',N",N",N",N"',N"'-Octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), CzPA, 7-[4-(10-Phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-Diphenyl-2-anthryl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-Phenyl-10-[4'-(9-phenyl-9H-fluoren-9-yl)-biphenyl-4-yl]anthracene (abbreviation: FLPPA), 9,10-Bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10-Di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-Butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9-(1-Naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,β-ADN), 2-(10-Phenylanthracene-9-yl)dibenzofuran, 2-(10-Phenyl-9-anthryl)-benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(1-Naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 2,9-Di(1-naphthyl)-10-phenylanthracene (abbreviation: 2αN-αNPhA), 9-(1-Naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: αNmαNPAnth), 9-(2-Naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: βNmαNPAnth) 9-(1-Naphthyl)-10-[4-(1-naphthyl)phenyl]anthracene (abbreviation: αN-αNPAnth), 9-(2-Naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: βN-βNPAnth), 2-(1-Naphthyl)-9-(2-naphthyl)-10-phenylanthracene (abbreviation: 2αN-βNPhA),9-(2-Naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(Biphenyl-4-yl)-9-anthryl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), 9,9'-Bianthryl (abbreviation: BANT), 9,9'-(Stilben-3,3'-diyl)diphenanthrene (abbreviation: DPNS), 9,9'-(Stilben-4,4'-diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-Tri(1-pyrenyl)benzene (abbreviation: TPB3), 5,12-Diphenyltetracene and 5,12-Bis(biphenyl-2-yl)tetracene. <<Wirtsmaterial für Phosphoreszenz> > In the case where the light-emitting substance used in the light-emitting layers (113, 113a and 113b) is a phosphorescent substance, an organic compound with a triplet excitation energy (an energy difference between a ground state and a triplet excitation state) higher than that of the light-emitting substance is preferably selected as the organic compound (host material) used in combination with the phosphorescent substance. It should be noted that when a plurality of organic compounds (e.g., a first host material and a second host material (or an auxiliary material)) are used to form an exciplex in combination with a light-emitting substance, the plurality of organic compounds are preferably mixed with the phosphorescent substance.Furthermore, the organic compound described in embodiment 1 and this embodiment can be used with a trisubstituted silyl group. In such a structure, light emission can be efficiently achieved through exciplex triplet energy transfer (ExTET), which is the transfer of energy from an exciplex to a light-emitting substance. It should be noted that a combination of the many organic compounds that readily form an exciplex is preferred, and it is particularly advantageous to combine a compound that readily accepts holes (hole transport material) with a compound that readily accepts electrons (electron transport material). With regard to a preferred combination with the light-emitting substance (the phosphorescent substance), examples of the organic compounds (the host material and the auxiliary material), some of which have been mentioned in the specific examples above, include an aromatic amine (an organic compound with an aromatic amine skeleton), a carbazole derivative (an organic compound with a carbazole ring), a dibenzothiophene derivative (an organic compound with a dibenzothiophene ring), a dibenzofuran derivative (an organic compound with a dibenzofuran ring), an oxadiazole derivative (an organic compound with an oxadiazole ring), a triazole derivative (an organic compound with a triazole ring), a benzimidazole derivative (an organic compound with a benzimidazole ring), and a quinoxaline derivative (an organic compound with a quinoxaline ring).a dibenzoquinoxaline derivative (an organic compound with a dibenzoquinoxaline ring), a pyrimidine derivative (an organic compound with a pyrimidine ring), a triazine derivative (an organic compound with a triazine ring), a pyridine derivative (an organic compound with a pyridine ring), a bipyridine derivative (an organic compound with a bipyridine ring), a phenanthroline derivative (an organic compound with a phenanthroline ring), a furodiazine derivative (an organic compound with a furodiazine ring), and zinc- or aluminum-based metal complexes. Among the organic compounds described above, specific examples include the aromatic amine and the carbazole derivative, which are organic compounds with high hole transport properties, just like the specific examples of the hole transport materials described above, and these materials are preferred as host materials. Among the above organic compounds, specific examples of the dibenzothiophene derivative and the dibenzofuran derivative, which are organic compounds with high hole transport properties, are mmDBFFLBi-II, DBF3P-II, DBT3P-II, DBTFLP-III, DBTFLP-IV and 4-[3-(Triphenylen-2-yl)phenyl]dibenzothiophene (abbreviation: mDBTPTp-II), and these materials are each preferred as host material. Other examples of preferred host materials include metal complexes with an oxazole-based ligand or a thiazole-based ligand, such as bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO) and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ). Among the aforementioned organic compounds, specific examples include the oxadiazole derivative, the triazole derivative, the benzimidazole derivative, the quinoxaline derivative, the dibenzoquinoxaline derivative, the quinazoline derivative, and the phenanthroline derivative, which are organic compounds with high electron transport properties; an organic compound that has a heteroaromatic ring with an azole ring, such as...2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-Bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-Phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-Biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 2,2',2''-(1,3,5-Benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(Dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II) or 4,4'-Bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs); an organic compound having a heteroaromatic ring with a phenanthroline ring, such as bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), 2,9-Di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) or 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P); and an organic compound having a heteroaromatic ring with a dibenzoquinoxaline ring, such as2-[3-(Dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(Dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-Carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-Diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(Dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II) 6-[3-(Dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2-{4-[9,10-Di(2-naphthyl)-2-anthryl]phenyl}-1-phenyl-1H-benzimidazole (abbreviation: ZADN) or 2-[4'-(9-Phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq). These organic compounds are preferred as host material. Among the aforementioned organic compounds, specific examples include the pyridine derivative, the diazine derivative (e.g., the pyrimidine derivative, the pyrazine derivative, and the pyridazine derivative), the triazine derivative, and the furodiazine derivative, which are organic compounds with high electron transport properties; organic compounds that have a heteroaromatic ring with a diazine ring, such as... B. 4,6-Bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-Bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-Bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), PCCzPTzn, mPCCzPTzn-02, 3,5-Bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-Tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), 9,9'-[Pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 2-[3'-(9,9-Dimethyl-9H-fluoren-2-yl)-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn),8-(Biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidin (Abkürzung: 8BP-4mDBtPBfpm), 9-[3'-(Dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazin (Abkürzung: 9mDBtBPNfpr), 9-[3'-(Dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazin (Abkürzung: 9pmDBtBPNfpr), 11-[3'-(Dibenzothiophen-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazin (Abkürzung: 11mDBtBPPnfpr), 11-[3'-(Dibenzothiophen-4-yl)biphenyl-4-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazin, 11-[(3'-9H-Carbazol-9-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazin, 12-(9'-Phenyl-[3,3'-bi-9H-carbazol]-9-yl)phenanthro[9',10':4,5]furo[2,3-b]pyrazin (Abkürzung: 12PCCzPnfpr), 9-[(3'-(9-Phenyl-9H-carbazol-3-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazin (Abkürzung: 9pmPCBPNfpr), 9-(9'-Phenyl-[3,3'-bi-9H-carbazol]-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazin (Abkürzung: 9PCCzNfpr), 10-(9'-Phenyl-[3,3'-bi-9H-carbazol]-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 10PCCzNfpr), 9-[3'-(6-Phenylbenzo[b]naphtho[1,2-d]furan-8-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mBnfBPNfpr), 9-{3-[6-(9,9-Dimethylfluoren-2-yl)dibenzothiophen-4-yl]phenyl}naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mFDBtPNfpr), 9-[3'-(6-Phenyldibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr-02), 9-[3-(9'-phenyl-[3,3'-bi-9H-carbazol]-9-yl)phenyl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mPCCzPNfpr), 9-[(3'-(2,8-Diphenyldibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine, 11-[(3'-(2,8-Diphenyldibenzothiophen-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 5-[3-(4,6-Diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mlNc(II)PTzn), 2-[3'-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 2-(Biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2,6-Bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 3-[9-(4,6-Diphenyl-1,3,5-triazine-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-(Biphenyl-3-yl)-4-phenyl-6-[8-[(1,1':4',1"-terphenyl]-4-yl)-1-dibenzofuranyl]-1,3,5-triazine (abbreviation: mBP-TPDBfTzn), 6-(Biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl)-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm) and 4-[3,5-Bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), and these materials are preferred as host material. Among the aforementioned organic compounds, specific examples of metal complexes exhibiting high electron transport properties include zinc- or aluminum-based metal complexes, such as tris(8-quinolinolato)aluminium(III) (abbreviation: Alq3), tris(4-methyl-8-quinolinolato)aluminium(III) (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinolato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminium(III) (abbreviation: BAlq), and bis(8-quinolinolato)zinc(II) (abbreviation: Znq), and metal complexes with a quinoline ring or a benzoquinoline ring. These metal complexes are preferred as host materials. Furthermore, high molecular weight compounds, such as poly(2,5-pyridindiyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py) and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy), are preferred as host material. Furthermore, the following organic compounds with a diazine ring, exhibiting bipolarity, high hole transport, and high electron transport properties, can be used as host material: 9-phenyl-9'-(4-phenyl-2-quinazolinyl)-3,3'-bi-9H-carbazole (abbreviation: PCCzQz), 2mpPCBPDBq, mlNc(II)PTzn, 11-[4-(Biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenyl-indolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn) and 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz). <elektronentransportschicht> The electron transport layers (114, 114a and 114b) transport electrons injected by the electron injection layers (115, 115a and 115b) described below from the second electrode 102 and the charge generation layers (106, 106a and 106b) to the light-emitting layers (113, 113a and 113b). The heat resistance of the light-emitting device of an embodiment of the present invention can be improved by including the stacked electron transport layers. The electron transport material used in the electron transport layers (114, 114a and 114b) is preferably a substance having an electron mobility of greater than or equal to 1 × 10⁻⁶ cm² / Vs when the square root of the electric field strength [V / cm] is 600.It should be noted that any other substance can also be used, as long as it has an electron transport property that is higher than its hole transport property. The electron transport layers (114, 114a, and 114b) can function even with a single-layer structure and can have a multi-layer structure comprising two or more layers. If a photolithography process is performed on the electron transport layer containing the heat-resistant mixed material described above, any adverse effect of the thermal process on the device properties can be reduced. < <elektronentransportmaterial>> An organic compound with high electron transport properties can be used as the electron transport material for the electron transport layers (114, 114a, and 114b), and for example, a heteroaromatic compound can be used. The term heteroaromatic compound refers to a cyclic compound containing at least two different types of elements in a ring. Examples of cyclic structures include a three-membered ring, a four-membered ring, a five-membered ring, a six-membered ring, and the like, among which a five-membered ring and a six-membered ring are particularly preferred. The elements contained in the heteroaromatic compound are preferably, in addition to carbon, one or more of nitrogen, oxygen, sulfur, and the like.A heteroaromatic compound containing nitrogen (a nitrogenous heteroaromatic compound) is particularly advantageous, and any material with high electron transport properties (electron transport materials), such as a nitrogenous heteroaromatic compound and a π-electron-deficient heteroaromatic compound comprising the nitrogenous heteroaromatic compound, is preferably used. Furthermore, the organic compound with a trisubstituted silyl group described in embodiment 1 and this embodiment can be used. It should be noted that the electron transport material can differ from the materials used in the light-emitting layer. Not all excitons generated by charge carrier recombination in the light-emitting layer can contribute to light emission, and some excitons diffuse into a layer in contact with or near the light-emitting layer. To avoid this phenomenon, the energy level (the lowest singlet excitation energy level or the lowest triplet excitation energy level) of a material used for the layer in contact with or near the light-emitting layer is preferably higher than that of a material used for the light-emitting layer itself.Therefore, if a material different from the material of the light-emitting layer is used as the electron transport material, a highly efficient device can be obtained. A heteroaromatic compound is an organic compound that has at least one heteroaromatic ring. The heteroaromatic ring comprises any one of a pyridine ring, a diazine ring, a triazine ring, an azole ring, an oxazole ring, a thiazole ring, and the like. A heteroaromatic ring with a diazine ring comprises a heteroaromatic ring with a pyrimidine ring, a pyrazine ring, a pyridazine ring, or the like. A heteroaromatic ring with an azole ring comprises a heteroaromatic ring with an imidazole ring, a triazole ring, or an oxadiazole ring. A heteroaromatic ring comprises a condensed heteroaromatic ring with a condensed ring structure. Examples of condensed heteroaromatic rings include a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a quinazoline ring, a benzoquinazoline ring, a dibenzoquinazoline ring, a phenanthroline ring, a furodiazine ring, and a benzimidazole ring. Examples of heteroaromatic compounds with a five-membered ring structure, which are heteroaromatic compounds containing carbon and one or more of nitrogen, oxygen, sulfur, and the like, include a heteroaromatic compound with an imidazole ring, a heteroaromatic compound with a triazole ring, a heteroaromatic compound with an oxazole ring, a heteroaromatic compound with an oxadiazole ring, a heteroaromatic compound with a thiazole ring, and a heteroaromatic compound with a benzimidazole ring. Examples of heteroaromatic compounds with a six-membered ring structure, which are heteroaromatic compounds containing carbon and one or more elements of nitrogen, oxygen, sulfur, and the like, include heteroaromatic compounds with a heteroaromatic ring such as a pyridine ring, a diazine ring (a pyrimidine ring, a pyrazine ring, a pyridazine ring, or the like), a triazine ring, or an azole ring. Further examples include heteroaromatic compounds with a bipyridine structure, heteroaromatic compounds with a terpyridine structure, and the like, which are included in examples of heteroaromatic compounds in which pyridine rings are linked. Examples of the heteroaromatic compound with a condensed ring structure, which partially exhibits the aforementioned six-membered ring structure, include a heteroaromatic compound with a condensed heteroaromatic ring such as a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a phenanthroline ring, a furodiazine ring (including a structure in which an aromatic ring is condensed with a furan ring of a furodiazine ring), or a benzimidazole ring. Specific examples of the heteroaromatic compound with a five-membered ring structure (e.g., an azole ring (including an imidazole ring, a triazole ring and an oxadiazole ring), an oxazole ring, a thiazole ring or a benzimidazole ring) are PBD, OXD-7, CO11, TAZ, 3-(4-tert-Butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole (abbreviation: p-EtTAZ), TPBI, mDBTBIm-II and BzOs. Specific examples of the heteroaromatic compound described above with a six-membered ring structure (including a heteroaromatic ring with a pyridine ring, a diazine ring, a triazine ring, or the like) include a heteroaromatic compound having a heteroaromatic ring with a pyridine ring, such as 35DCzPPy or TmPyPB; a heteroaromatic compound having a heteroaromatic ring with a triazine ring, such as... B. PCCzPTzn, mPCCzPTzn-02, mlNc(II)PTzn, mTpBPTzn, BP-SFTzn, 2,4NP-6PyPPm, PCDBfTzn, mBP-TPDBfTzn, 2-{3-[3-(Dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn) or mFBPTzn; and a heteroaromatic compound having a heteroaromatic ring with a diazine (pyrimidine) ring, such as4,6mPnP2Pm, 4,6mDBTP2Pm-II, 4,6mCzP2Pm, 4,6mCzBP2Pm, 6mBP-4Cz2PPm, 6BP-4Cz2PPm, 4-[3-(Dibenzothiophen-4-yl)phenyl]-8-(naphthalen-2-yl)-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8βN-4mDBtPBfpm), 8BP-4mDBtPBfpm, 9mDBtBPNfpr, 9pmDBtBPNfpr, 3,8-Bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3.8mDBtP2Bfpr), 4,8-Bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(Dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm) or 8-([2,2'-Binaphthalene]-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm). It should be noted that the aforementioned aromatic compounds, which contain a heteroaromatic ring, include a heteroaromatic compound with a fused heteroaromatic ring. Other examples include heteroaromatic compounds that have a heteroaromatic ring with a diazine (pyrimidine) ring, such as... B. 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-([2,2'-bipyridine]-6,6'-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 6,6'(P-Bqn)2BPy), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py) or 6mBP-4Cz2PPm, and a heteroaromatic compound having a heteroaromatic ring with a triazine ring, such as e.g. B. 2,4,6-Tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2,4,6-Tris(2-pyridyl)-1,3,5-triazine (abbreviation: 2Py3Tzn) or 2-[3-(2,6-Dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn). Specific examples of the heteroaromatic compound with a condensed ring structure described above, which partially exhibits a six-membered ring structure (the heteroaromatic compound with a condensed ring structure), include a heteroaromatic compound with a quinoxaline ring, such as BPhen, BCP, NBPhen, mPPhen2P, 2,6(P-Bqn)2Py, 2mDBTPDBq-II, 2mDBTBPDBq-II, 2mCzBPDBq, 2CzPDBq-III, 7mDBTPDBq-II, 6mDBTPDBq-II and 2mpPCBPDBq. For the electron transport layers (114, 114a and 114b), in addition to the heteroaromatic compounds described above, any of the metal complexes listed below can be used. Examples of the metal complexes include a metal complex with a quinoline ring or a benzoquinoline ring, such as Alq3, Almq3, 8-quinolinolatolithium (abbreviation: Liq), BAlq and Znq, and a metal complex with an oxazole ring or a thiazole ring, such as ZnPBO and ZnBTZ. It is also possible to use high molecular weight compounds, such as PPy, PF-Py and PF-BPy, as electron transport materials. Each of the electron transport layers (114, 114a and 114b) is not limited to a single layer and can be a layer arrangement of two or more layers, each containing any one of the aforementioned substances. <elektroneninjektionsschicht> The electron injection layers (115, 115a and 115b) contain a substance with high electron injection properties. These layers are designed to increase the efficiency of electron injection from the second electrode 102 and are preferably formed using a material whose LUMO level is only slightly different (less than or equal to 0.5 eV) from the work function of a material used for the second electrode 102. Therefore, the electron injection layer 115 can be formed using an alkali metal, an alkaline earth metal, or a compound thereof, such as...Lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-quinolinolatolithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), an oxide of lithium (LiOx), or cesium carbonate can be formed. A rare-earth metal or a rare-earth metal compound, such as erbium fluoride (ErF3) or ytterbium (Yb), can also be used. It is also possible to use a compound that has a 1,3,4,6,7,8-tetrahydro-2H-pyrimido[1,2-a]pyrimidine skeleton, such as... B. 1-(9,9'-Spirobi[9H-fluorene]-2-yl)-1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine (abbreviation: 2hppSF), 1,1'-(9,9'-Spirobi[9H-fluorene]-2,7-diyl)bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviation: 2,7hpp2SF) or 1,1'-Pyridine-2,6-diyl-bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviation: hpp2Py).To form the electron injection layers (115, 115a, and 115b), two or more of the above materials can be mixed or stacked. An electride can also be used for the electron injection layers (115, 115a, and 115b). Examples of an electride include substances in which electrons are added to a calcium oxide-aluminum oxide at a high concentration. Any of the substances mentioned above for forming the electron transport layers (114, 114a, and 114b) can also be used. A mixed material containing an organic compound and an electron donor (donor) can also be used for the electron injection layers (115, 115a, and 115b). Such a mixed material exhibits excellent electron injection and electron transport properties because the electron donor generates electrons in the organic compound. The organic compound is preferably a material capable of excellent electron transport; in particular, the electron transport materials described above for the electron transport layers (114, 114a, and 114b), such as a metal complex and a heteroaromatic compound, can be used. The electron donor is preferably a substance that exhibits electron donor properties with respect to an organic compound.In particular, an alkali metal, an alkaline earth metal, and a rare earth metal are preferred, and lithium, cesium, magnesium, calcium, erbium, ytterbium, and the like are specified. Furthermore, an alkali metal oxide and an alkaline earth metal oxide are preferred, and lithium oxide, calcium oxide, barium oxide, and the like are specified. Alternatively, a Lewis base, such as magnesium oxide, may be used. As a further alternative, an organic compound, such as tetrathiafulvalene (abbreviation: TTF), may be used. Alternatively, a layered arrangement of two or more of these materials may be used. A mixed material containing an organic compound and a metal can also be used for the electron injection layers (115, 115a and 115b). The organic compound used here preferably has a LUMO level higher than or equal to -3.60 eV and lower than or equal to -2.30 eV. Furthermore, a material with an unshared electron pair is preferred. Therefore, a mixed material obtained by mixing a metal and the heteroaromatic compound specified above as a material suitable for the electron transport layer can be used as the organic compound used in the aforementioned mixed material. Preferred examples of the heteroaromatic compound include materials with an unshared electron pair, such as a heteroaromatic compound with a five-membered ring structure (e.g., an imidazole ring, a triazole ring, an oxazole ring, an oxadiazole ring, a thiazole ring, or a benzimidazole ring), a heteroaromatic compound with a six-membered ring structure (e.g.,a pyridine ring, a diazine ring (including a pyrimidine ring, a pyrazine ring, a pyridazine ring, or the like), a triazine ring, a bipyridine ring, or a terpyridine ring), and a heteroaromatic compound with a fused ring structure that partially exhibits a six-membered ring structure (e.g., a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, or a phenanthroline ring). Since the materials have been specifically described above, their description is omitted here. The metal used for the aforementioned mixed material is preferably a transition metal belonging to Group 5, Group 7, Group 9 or Group 11 of the periodic table, or a material belonging to Group 13 of the periodic table, examples of which include Ag, Cu, Al and In. The organic compound forms a singly occupied molecular orbital (SOMO) with the transition metal. To amplify light received from the light-emitting layer 113b, the optical path length between the second electrode 102 and the light-emitting layer 113b is preferably less than one-quarter of the wavelength λ of the light emitted by the light-emitting layer 113b. In this case, the optical path length can be adjusted by changing the thickness of the electron transport layer 114b or the electron injection layer 115b. <ladungserzeugungsschicht> The charge-generating layer 106 has a function for injecting electrons into the EL layer 103a and injecting holes into the EL layer 103b when a voltage is applied between the first electrode (anode) 101 and the second electrode (cathode) 102. The charge-generating layer 106 can be either a p-type layer in which an electron acceptor is added to a hole transport material, or an electron injection buffer layer in which an electron donor is added to an electron transport material. Alternatively, both of these structures can be stacked on top of each other. Furthermore, an electron conduction layer can be provided between the p-type layer and the electron injection buffer layer.It should be noted that forming the charge-generating layer 106 using any of the above materials can prevent an increase in operating voltage caused by the layer arrangement of the EL layers. In the case where the charge-generating layer 106 is a p-type layer to which an electron acceptor is added to a hole-transporting material that is an organic compound, any of the materials described for this embodiment can be used as the hole-transporting material. Examples of the electron acceptor include F4-TCNQ and chloranil. Further examples include oxides of metals belonging to groups 4 to 8 of the periodic table. Specific examples include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. Any of the acceptor materials described above can be used. Furthermore, a mixed film obtained by mixing materials of a p-type layer or a layered arrangement of films containing the respective materials can be used. In the case where the charge-generating layer 106 is an electron injection buffer layer in which an electron donor is added to an electron transport material, any of the materials described in this embodiment can be used as the electron transport material. Furthermore, the organic compound with a trisubstituted silyl group described in embodiment 1 and this embodiment can be used. An alkali metal, an alkaline earth metal, a rare earth metal, a metal belonging to Group 2 or Group 13 of the periodic table, or an oxide or carbonate thereof can be used as the electron donor. In particular, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li₂O), cesium carbonate, or the like are preferably used. An alkali metal compound, such as Liq, can be used. An organic compound, such asTetrathianaphthacene can be used as an electron donor. An organic compound having a 1,3,4,6,7,8-tetrahydro-2H-pyrimido[1,2-a]pyrimidine skeleton, such as 2hppSF, 2,7hpp2SF, or hpp2Py, can also be used as an electron donor. When any of these organic compounds is used as the electron donor, the electron transport material to be combined with the electron donor is preferably an organic compound having a heteroaromatic ring with a phenanthroline ring, such as BPhen, BCP, NBPhen, or 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), in which case the operating voltage of the light-emitting device can be reduced. If an electron transfer layer is provided in the charge generation layer 106 between a p-type layer and an electron injection buffer layer, the electron transfer layer contains at least one substance with electron transport properties and has a function for preventing interaction between the electron injection buffer layer and the p-type layer and for facilitating electron transfer. The LUMO level of the substance with electron transport properties in the electron transfer layer preferably lies between the LUMO level of the acceptor substance in the p-type layer and the LUMO level of the substance with electron transport properties in the electron transfer layer that is in contact with the charge generation layer 106.In particular, the LUMO level of the substance with electron transport properties in the electron conduction layer can be higher than or equal to -5.00 eV, preferably higher than or equal to -5.00 eV and lower than or equal to -3.00 eV. It should be noted that the substance with electron transport properties in the electron conduction layer is preferably a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand. It should be noted that the charge-generating layer 106 preferably has a visible light transmittance property with respect to light extraction efficiency (in particular, the charge-generating layer 106 preferably has a visible light transmittance of 40% or higher). The charge-generating layer 106 functions even if it has a lower conductivity than the first electrode 101 and the second electrode 102. Although Fig. 1E shows the structure in which two EL layers 103 are arranged one above the other, three or more EL layers can be arranged one above the other, with charge-generating layers provided between each pair of adjacent EL layers. <cap-schicht> Although not shown in Figures 1A to 1F, a cap layer can be provided over the second electrode 102 of the light-emitting device. For example, a material with a high refractive index can be used for the cap layer. Providing the cap layer over the second electrode 102 can improve the extraction efficiency of light emitted via the second electrode 102. Specific examples of a material that can be used for the cap layer include 5,5'-Diphenyl-2,2'-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviation: BisBTc) and DBT3P-II. <substrat> The light-emitting device described in this embodiment can be formed on any number of different substrates. It should be noted that the type of substrate is not limited to any one particular type. Examples of substrates include semiconductor substrates (e.g., a single-crystal substrate and a silicon substrate), a SOL substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate containing a stainless steel foil, a tungsten substrate, a substrate containing a tungsten foil, a flexible substrate, a mounting film and paper, or a base material film containing a fiber material. Examples of the glass substrate include barium borosilicate glass, aluminum borosilicate glass, and soda-lime glass. Examples of the flexible substrate, affixing film, and base material film include plastics, typically polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyethersulfone (PES); a synthetic resin, such as an acrylic resin, polypropylene, polyester, polyvinyl fluoride, polyvinyl chloride, polyamide, polyimide, aramid, an epoxy resin, an evaporation-formed inorganic film, and paper. The light-emitting device of this embodiment can be manufactured using a gas-phase process, such as an evaporation process, or a liquid-phase process, such as a rotational coating process or an inkjet process. If an evaporation process is used, a physical vapor deposition (PVD) process, such as sputtering, ion plating, ion beam evaporation, molecular beam evaporation, or vacuum evaporation, a chemical vapor deposition (CVD) process, or the like, can be employed.In particular, the layers with different functions (the hole injection layer 111, the hole transport layer 112, the light-emitting layer 113, the electron transport layer 114 and the electron injection layer 115) contained in the EL layers of the light-emitting device can be formed by an evaporation process (e.g. a vacuum evaporation process), a coating process (e.g. a dip coating process, a nozzle coating process, a rod coating process, a rotary coating process or a spray coating process), a printing process (e.g. an inkjet process, a screen printing (stencil printing), an offset printing (planographic printing), a flexographic printing (relief printing), an intaglio printing or a microcontact printing) or the like. In cases where a film formation process, such as coating or printing, is used, a high-molecular-weight compound (e.g., an oligomer, a dendrimer, or a polymer), a medium-molecular-weight compound (a compound between a low-molecular-weight compound and a high-molecular-weight compound with a molecular weight of 400 to 4000), an inorganic compound (e.g., a quantum dot material), or the like can be used. The quantum dot material can be a gelatinous quantum dot material, an alloyed quantum dot material, a core-shell quantum dot material, a core quantum dot material, or the like. Materials that can be used for the layers (the hole injection layer 111, the hole transport layer 112, the light-emitting layer 113, the electron transport layer 114 and the electron injection layer 115) contained in the EL layer 103 of the light-emitting device described in this embodiment are not limited to the materials described in this embodiment, and other materials can be used in combination as long as the functions of the layers are fulfilled. The structures described in this embodiment can be used in a suitable combination with any of the structures described in the other embodiments. (Version 3) This embodiment describes a display device of an embodiment of the present invention. The display device in this embodiment can be a high-resolution display device. Therefore, the display device in this embodiment can be used for display sections of information terminal devices (portable devices), such as information terminal devices in the form of a wristwatch and a bracelet, and display sections of wearable devices that can be worn on the head, such as a VR device, e.g., a head-mounted display (HMD), and a glasses-like AR device. The display device in this embodiment can be a high-definition display device or a large display device. Accordingly, the display device in this embodiment can be used for display sections of a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game console, a portable information terminal, and an audio playback device, in addition to display sections of electronic devices with a relatively large screen, such as a television, desktop and laptop PCs, a computer monitor, and the like, digital signage, and a large gaming machine, such as a pachinko machine. [Display module] Fig. 2A is a perspective view of a display module 280. The display module 280 comprises a display device 600A and an FPC 290. It should be noted that the display device contained in the display module 280 is not limited to the display device 600A and can be a display device 600B, which will be described later. The display module 280 comprises a substrate 291 and a substrate 292. The display module 280 includes a display section 281. The display section 281 is an area of ​​the display module 280 in which an image is displayed and is an area in which light emitted by pixels provided in a pixel section 284 described later can be seen. Fig. 2B is a perspective view schematically illustrating the structure on the side of substrate 291. A circuit section 282, a pixel circuit section 283 above circuit section 282, and pixel section 284 above pixel circuit section 283 are arranged one above the other on top of substrate 291. A connection section 285 for connecting to the FPC 290 is also included in a section above substrate 291 that does not overlap with pixel section 284. Connection section 285 and circuit section 282 are electrically connected to each other via a conductor section 286, which is formed from a plurality of conductors. Pixel section 284 comprises a plurality of periodically arranged pixels 284a. An enlarged view of a pixel 284a is shown on the right in Fig. 2B. Any of the structures described in the preceding embodiments can be used for the pixels 284a. The pixel circuit section 283 comprises a plurality of periodically arranged pixel circuits 283a. A pixel circuit 283a is a circuit that controls the operation of a plurality of elements contained within a pixel 284a. A pixel circuit 283a can be provided with three circuits, each controlling a light emission from a light-emitting device. For example, the pixel circuit 283a can include at least one selector transistor, one current-control transistor (driver transistor), and one capacitor per light-emitting device. A gate signal is input to a gate of the selector transistor, and a video signal is input to a source and drain terminal of the selector transistor. Thus, an active-matrix display device is achieved. Circuit section 282 comprises a circuit for driving the pixel circuits 283a in pixel circuit section 283. For example, circuit section 282 preferably comprises a gate-line driver circuit and / or a source-line driver circuit. Circuit section 282 may also include at least one arithmetic circuit, a memory circuit, a power supply circuit, and the like. The FPC 290 serves as a conduit for supplying an external video signal, power supply potential, or the like to circuit section 282. An IC can be mounted on the FPC 290. The display module 280 can have a structure in which the pixel circuit section 283 and / or the circuit section 282 are arranged below the pixel section 284; therefore, the aperture ratio (the effective display area ratio) of the display section 281 can be significantly high. For example, the aperture ratio of the display section 281 can be greater than or equal to 40% and less than 100%, preferably greater than or equal to 50% and less than or equal to 95%, and more preferably greater than or equal to 60% and less than or equal to 95%. Furthermore, the pixels 284a can be arranged very densely, and therefore the display section 281 can have a very high definition.For example, the pixels 284a in the display section 281 are arranged such that they have a definition of preferably higher than or equal to 2000 ppi, more preferably higher than or equal to 3000 ppi, even more preferably higher than or equal to 5000 ppi, even more preferably higher than or equal to 6000 ppi and lower than or equal to 20000 ppi or lower than or equal to 30000 ppi. The Pixel 284a comprises a subpixel 110R, a subpixel 110G and a subpixel 110B. In this description and similar texts, for example, an explanation common to subpixels 110R, 110G, and 110B is given, in some cases using the collective term "subpixel 110." Regarding other components, which are distinguished from one another using letters of the alphabet, common features of the components are described in some cases using reference symbols without the letters of the alphabet. Subpixel 110R emits red light, subpixel 110G emits green light, and subpixel 110B emits blue light. Therefore, an image can be displayed on pixel section 177. It should be noted that in this embodiment, three colors—red (R), green (G), and blue (B)—are given as examples of the colors of light emitted by the subpixels; however, subpixels of different combinations of colors can be used. The number of subpixels is not limited to three and can be four or more. Examples of four subpixels include subpixels emitting light of four colors: R, G, B, and white (W); subpixels emitting light of four colors: R, G, B, and Y; and four subpixels emitting light of R, G, and B, as well as infrared (IR) light. Such a display module 280 has a very high resolution and can therefore be used in a VR device, such as an HMD or a glasses-like AR device. For example, even in the case of a structure where the display section of the display module 280 is viewed through a lens, the pixels of the very high-resolution display section 281 contained in the display module 280 are prevented from being detected when the display section is magnified by the lens, thus enabling the display to provide a high level of immersion. However, the display module 280 can also be used in electronic devices that include a relatively small display section. For example, the display module 280 can be advantageously used in a display section of a portable electronic device, such as a wristwatch. [Display device 600A] The display device 600A shown in Fig. 3A comprises a substrate 301, the light-emitting devices 130R, 130G and 130B, a capacitor 240 and a transistor 310. Substrate 301 corresponds to substrate 291 in Fig. 2A and Fig. 2B. Transistor 310 comprises a channeling region in substrate 301. For example, a semiconductor substrate, such as a single-crystal silicon substrate, can be used as substrate 301. Transistor 310 comprises a portion of substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 serves as the gate electrode. The insulating layer 313 is positioned between substrate 301 and conductive layer 311 and serves as the gate insulating layer. The low-resistance region 312 is a region in which substrate 301 is doped with an impurity and serves as the source or drain. The insulating layer 314 is provided such that it covers the side face of conductive layer 311. An element insulating layer 315 is provided between two adjacent transistors 310 such that it is embedded in the substrate 301. An insulating layer 261 is provided such that it covers the transistor 310, and the capacitor 240 is provided above the insulating layer 261. The capacitor 240 comprises a conductive layer 241, a conductive layer 245, and an insulating layer 243 between the conductive layers 241 and 245. The conductive layer 241 serves as one electrode of the capacitor 240, the conductive layer 245 serves as the other electrode of the capacitor 240, and the insulating layer 243 serves as the dielectric of the capacitor 240. The conductive layer 241 is provided above the insulating layer 261 and is embedded in an insulating layer 254. The conductive layer 241 is electrically connected to a terminal of the source and drain of the transistor 310 via a terminal plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided such that it covers the conductive layer 241. The conductive layer 245 is provided in a region that overlaps with the conductive layer 241, with the insulating layer 243 lying between them. An insulating layer 255 is provided such that it covers the capacitor 240. The insulating layer 174 is provided over the insulating layer 255. The insulating layer 175 is provided over the insulating layer 174. The light-emitting devices 130R, 130G, and 130B each have a structure as described in embodiment 2. An insulator is provided in areas between adjacent light-emitting devices. For example, in Fig. 3A, the inorganic insulating layer 125 and the insulating layer 127 over the inorganic insulating layer 125 are provided in these areas. Light-emitting device 130R comprises a first electrode comprising a conductive layer 151R and a conductive layer 152R, an EL layer 103R above the first electrode, and a common layer 155 above the EL layer 103R. Light-emitting device 130G comprises a first electrode comprising a conductive layer 151G and a conductive layer 152G, an EL layer 103G above the first electrode, and the common layer 155 above the EL layer 103G. Light-emitting device 130B comprises a first electrode comprising a conductive layer 151B and a conductive layer 152B, an EL layer 103B above the first electrode, and the common layer 155 above the EL layer 103B. A sacrificial layer 158R is positioned above the EL layer 103R of light-emitting device 130R. A sacrificial layer 158G is positioned above the EL layer 103G of the light-emitting device 130G.A sacrificial layer 158B is positioned above the EL layer 103B of the light-emitting device 130B. The common layer 155 shared by the light-emitting devices includes at least one second electrode. The common layer 155 may include an electron injection layer positioned between the second electrode and each EL layer. For example, the light-emitting device 130R may emit red light, the light-emitting device 130G may emit green light, and the light-emitting device 130B may emit blue light. In this description and the like, the light-emitting devices 130R, 130G, and 130B are, in some cases, referred to collectively as "light-emitting device 130".In this description and similar texts, the description common to conducting layers 151R, 151G, and 151B is sometimes given using the collective term "conducting layer 151". Similarly, in this description and similar texts, the description common to conducting layers 152R, 152G, and 152B is sometimes given using the collective term "conducting layer 152". In the light-emitting device 130, one of the first electrodes and one of the second electrodes serve as the anode, and the other serves as the cathode. The following description assumes that the first electrode serves as the anode and the second electrode as the cathode, unless otherwise specified. The EL layers contained in the light-emitting device 130 are island-shaped and independent of each other, based on either a light-emitting device or an emission color. By providing the island-shaped EL layer 103 in each of the light-emitting devices 130, leakage current between adjacent light-emitting devices 130 can be suppressed, even in a high-resolution display device. This can prevent crosstalk, thus enabling a display device with very high contrast. In particular, a display device with high power efficiency at low luminance can be obtained. In the display device of an embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device preferably has a multilayer structure. For example, in the example shown in Fig. 3B, the first electrode of the light-emitting device 130 is a layered arrangement of the conductive layer 151 and the conductive layer 152. In the case where, for example, the display device 600A is a top-emission type and the pixel electrode of the light-emitting device 130 serves as the anode, the conductive layer 151 preferably has a high reflectivity for visible light, and the conductive layer 152 preferably has a transmittance property for visible light and a high work function.The higher the visible light reflectance of the pixel electrode, the higher the light extraction efficiency of the light emitted by the EL layer 103, if the display device 600A is a top-emission type. The higher the work function of the pixel electrode, the easier it is to inject holes into the EL layer 103 when the pixel electrode acts as the anode. Consequently, if the pixel electrode of the light-emitting device 130 is a layer arrangement consisting of the conductive layer 151 with high visible light reflectance and the conductive layer 152 with high work function, the light-emitting device 130 can exhibit high light extraction efficiency and a low operating voltage. In the case where the conductive layer 151 has a high reflectivity for visible light, the reflectivity for visible light of the conductive layer 151 is preferably higher than or equal to 40% and lower than or equal to 100%, or higher than or equal to 70% and lower than or equal to 100%. If the conductive layer 152 is used as an electrode with a transmittance property for visible light, it preferably has, for example, a transmittance for visible light of higher than or equal to 40%. If such a pixel electrode is a layered arrangement consisting of a large number of layers, the quality of which could change, for example, as a result of a reaction between the layers. If, for instance, a film formed after the pixel electrode is created is removed by a wet etching process, contact with a chemical solution could cause galvanic corrosion. Therefore, in this embodiment of the display device 600A, an insulating layer 156 (insulating layers 156R, 156G, and 156B) is formed on the side surfaces of the conductive layers 151 and 152. This prevents a chemical solution from coming into contact with the conductive layer 151, for example, when a film formed after the formation of the pixel electrode, which comprises the conductive layer 151 and the conductive layer 152, is removed by a wet etching process. Accordingly, the occurrence of galvanic corrosion in the pixel electrode, for example, can be prevented. This allows the display device 600A to be manufactured using a high-yield process and is therefore cost-effective. Furthermore, the generation of defects in the display device 600A can be prevented, making the display device 600A highly reliable.In this description and the like, the common description of the conducting layers 156R, 156G and 156B is in some cases given using the collective term “conducting layer 156”. A metallic material can be used, for example, for the conductive layer 151. In particular, it is possible to use, for example, a metal such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), or neodymium (Nd), or an alloy containing a suitable combination of any of these metals. For the conductive layer 152, an oxide containing one or more selected elements from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, a conductive oxide comprising one or more of the following is preferably used: indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, indium zinc oxide containing silicon, and the like. In particular, an indium tin oxide containing silicon can be used suitablely for the conductive layer 152 because, for example, it has a work function of 4.0 eV or higher. The conductive layer 151 is electrically connected to a source and drain terminal of the corresponding transistor 310 via a terminal plug 256 embedded in the insulating layers 243, 255, 174, and 175, the conductive layer 241 embedded in the insulating layer 254, and the terminal plug 271 embedded in the insulating layer 261. The top surface of the insulating layer 175 is at the same level, or substantially at the same level, as the top surface of the terminal plug 256. Any number of different conductive materials can be used for the terminal plugs. The protective layer 135 is provided over the light-emitting device 130. A substrate 120 is bonded to the protective layer 135 by a resin layer 122. The substrate 120 corresponds to the substrate 292 in Fig. 2A. Fig. 3B shows a variation of the display device 600A shown in Fig. 3A. The light-emitting device shown in Fig. 3B comprises the color layers 136R, 136G, and 136B, and each of the light-emitting devices 130 comprises an area that overlaps with one of the color layers 136R, 136G, and 136B. In the display device shown in Fig. 3B, the light-emitting device 130 can, for example, emit white light. For example, the color layer 136R, the color layer 136G, and the color layer 136B can transmit red light, green light, and blue light, respectively. [Display device 600B] Fig. 4 is a perspective view of the display device 600B, and Fig. 5 is a cross-sectional view of the display device 600B. In the display device 600B, a substrate 352 and a substrate 351 are bonded together. In Fig. 4, the substrate 352 is indicated by a dashed line. The display device 600B comprises the pixel section 177, the connection section 140, a circuit 356, a line 355, and the like. Fig. 4 shows an example in which an integrated circuit (IC) 354 and an FPC 353 are mounted on the display device 600B. Therefore, the structure shown in Fig. 4 can be considered a display module comprising the display device 600B, the IC, and the FPC. Here, a display device in which a substrate is equipped with a connection, such as an FPC, or is mounted with an IC, is referred to as a display module. The connecting section 140 is provided outside the pixel section 177. The connecting section 140 can be provided along one side or a plurality of sides of the pixel section 177. The number of connecting sections 140 can be one or more. Fig. 4 shows an example in which the connecting section 140 is provided such that it surrounds the four sides of the pixel section 177. A common electrode of a light-emitting device is electrically connected to a conductive layer at the connecting section 140 so that a potential can be applied to the common electrode. Circuit 356 can, for example, be used as a sampling line driver circuit. Line 355 serves to supply a signal and current to pixel section 177 and circuit 356. The signal and current are input to line 355 externally via FPC 353 or IC 354. Figure 4 shows an example in which IC 354 is provided for substrate 351 by a chip-on-glass (COG) process, a chip-on-film (COF) process, or the like. For example, IC 354 can be an IC comprising a scanning line driver circuit, a signal line driver circuit, or the like. It should be noted that the display device 600B and the display module are not necessarily provided with an IC. Alternatively, the IC can be mounted on the FPC, for example, by a COF process. Fig. 5 shows an example of cross-sections of part of an area comprising the FPC 353, part of the circuit 356, part of the pixel section 177, part of the connecting section 140 and part of an area comprising an end section, the display device 600B. The display device 600B shown in Fig. 5 comprises a transistor 201, a transistor 205, the light-emitting device 130R which emits red light, the light-emitting device 130G which emits green light, the light-emitting device 130B which emits blue light, and the like between the substrate 351 and the substrate 352. The multilayer structure of each of the light-emitting devices 130R, 130G, and 130B is the same as that shown in Fig. 1A, with the exception of the pixel electrode structure. For details of the light-emitting devices, reference can be made to the preceding embodiments. Light-emitting device 130R comprises a conductive layer 224R, a conductive layer 151R above conductive layer 224R, and a conductive layer 152R above conductive layer 151R. Light-emitting device 130G comprises a conductive layer 224G, a conductive layer 151G above conductive layer 224G, and a conductive layer 152G above conductive layer 151G. Light-emitting device 130B comprises a conductive layer 224B, a conductive layer 151B above conductive layer 224B, and a conductive layer 152B above conductive layer 151B. Here, the conductive layers 224R, 151R, and 152R can be collectively referred to as the pixel electrode of light-emitting device 130R. The conductive layers 151R and 152R, with the exception of the conductive layer 224R, can also be referred to as the pixel electrode of the light-emitting device 130R.Similarly, the conductive layers 224G, 151G, and 152G can be collectively referred to as the pixel electrode of the light-emitting device 130G; the conductive layers 151G and 152G, with the exception of conductive layer 224G, can also be referred to as the pixel electrode of the light-emitting device 130G. The conductive layers 224B, 151B, and 152B can be collectively referred to as the pixel electrode of the light-emitting device 130B; the conductive layers 151B and 152B, with the exception of conductive layer 224B, can also be referred to as the pixel electrode of the light-emitting device 130B. The conductive layer 224R is connected via an opening provided in an insulating layer 214 to a conductive layer 222b contained in the transistor 205. An end section of the conductive layer 151R is positioned further outward than an end section of the conductive layer 224R. The insulating layer 156R is provided to encompass an area in contact with the side face of the conductive layer 151R, and the conductive layer 152R is provided such that it covers the conductive layer 151R and the insulating layer 156R. The conductive layers 224G, 151G and 152G and the insulating layer 156G in the light-emitting device 130G are not described in detail, as they are each similar to the conductive layers 224R, 151R and 152R and the insulating layer 156R in the light-emitting device 130R; the same applies to the conductive layers 224B, 151B and 152B and the insulating layer 156B in the light-emitting device 130B. The conductive layers 224R, 224G, and 224B each comprise a recessed section that covers the opening provided in the insulating layer 214. A layer 128 is embedded in the recessed section. Layer 128 serves to fill the recessed areas of conductive layers 224R, 224G, and 224B to maintain planarity. Conductive layers 151R, 151G, and 151B are provided above conductive layers 224R, 224G, and 224B and layer 128, and are electrically connected to conductive layers 224R, 224G, and 224B, respectively. Therefore, the areas overlapping with the recessed areas of conductive layers 224R, 224G, and 224B can also be used as light-emitting regions, thereby increasing the pixel aperture ratio. Layer 128 can be an insulating layer or a conductive layer. Any of several inorganic insulating materials, organic insulating materials, and conductive materials can be suitably used for layer 128. In particular, layer 128 is preferably formed using an insulating material, and is especially preferably formed using an organic insulating material. Layer 128 can, for example, be formed using an organic insulating material suitable for insulating layer 127. The protective layer 135 is provided over the light-emitting devices 130R, 130G, and 130B. The protective layer 135 and the substrate 352 are bonded together with an adhesive layer 142. The substrate 352 is provided with an opaque layer 157. A solid sealing structure, a hollow sealing structure, or the like can be used to seal the light-emitting device 130. In Fig. 5, a solid sealing structure is used in which a space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142. Alternatively, the space can be filled with an inert gas (e.g., nitrogen or argon), i.e., a hollow sealing structure can be used. In this case, the adhesive layer 142 can be provided in a frame shape such that it does not overlap with the light-emitting device.Furthermore, the space can be filled with a resin other than the frame-like adhesive layer 142. Fig. 5 shows an example in which the interconnect section 140 comprises a conductive layer 224C, obtained by processing the same conductive film as conductive layers 224R, 224G, and 224B; a conductive layer 151C, obtained by processing the same conductive film as conductive layers 151R, 151G, and 151B; and a conductive layer 152C, obtained by processing the same conductive film as conductive layers 152R, 152G, and 152B. In the example shown in Fig. 5, the insulating layer 156C is provided such that it includes an area that overlaps with the side face of conductive layer 151C. The display device 600B has a top-emission structure. Light from the light-emitting device is emitted towards the substrate 352. The substrate 352 is preferably made of a material with high transmittance for visible light. The pixel electrode contains a material that reflects visible light, and a counter electrode (the common electrode 155) contains a material that transmits visible light. Transistor 201 and transistor 205 are formed on substrate 351. These transistors can be formed using the same materials and in the same steps. An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided above the substrate 351 in that order. A portion of the insulating layer 211 serves as the gate insulating layer of each transistor. A portion of the insulating layer 213 serves as the gate insulating layer of each transistor. The insulating layer 215 is provided in such a way that it covers the transistors. The insulating layer 214 is provided in such a way that it covers the transistors and it functions as a planarization layer. It should be noted that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and there can be one or more of each. A material that does not readily allow the diffusion of impurities, such as water and hydrogen, is preferably used for at least one of the insulating layers covering the transistors. This is because such an insulating layer can act as a barrier layer. With such a structure, the diffusion of external impurities into the transistors can be effectively suppressed, thus increasing the reliability of a display device. An inorganic insulating film is preferably used as any of the insulating layers 211, 213, and 215. For example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used as the inorganic insulating film. A hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like can also be used. Two or more of the aforementioned insulating films can also be arranged one above the other. An organic insulating layer is suitable for the insulating layer 214, which serves as a planarizing layer. Examples of materials that can be used for the organic insulating layer include an acrylic resin, a polyimide resin, an epoxy resin, a polyamide resin, a polyimidamide resin, a siloxane resin, a benzocyclobutene-based resin, a phenolic resin, and precursors of these resins. The insulating layer 214 can have a multilayer structure consisting of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably serves as an etch-resistant layer. This can prevent the formation of a depression in the insulating layer 214 during the processing of the conductive layer 224R, 151R, or 152R, or the like. Alternatively, a depression in the insulating layer 214 can be provided during the processing of the conductive layer 224R, 151R, or 152R, or the like. Transistors 201 and 205 each comprise a conductive layer 221, which serves as the gate; an insulating layer 211, which serves as the gate insulating layer; a conductive layer 222a and a conductive layer 222b, which serve as the source and drain, respectively; a semiconductor layer 231; an insulating layer 213, which serves as the gate insulating layer; and a conductive layer 223, which serves as the gate. Here, multiple layers obtained by processing the same conductive film are represented by the same hatching pattern. The insulating layer 211 is positioned between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is positioned between the conductive layer 223 and the semiconductor layer 231. There is no particular restriction regarding the structure of the transistors included in the display device of this embodiment. For example, a planar transistor, a staggered transistor, or an inverted staggered transistor can be used. A top-gate transistor or a bottom-gate transistor can also be used. Alternatively, gates can be provided above and below a semiconductor layer in which a channel is formed. The structure, in which the semiconductor layer forming a channel is provided between two gates, is used for each of transistors 201 and 205. The two gates can be connected together and supplied with the same signal to operate the transistor. Alternatively, the transistor's threshold voltage can be controlled by applying a threshold-control potential to one of the two gates and an operating potential to the other. There is no particular restriction regarding the crystallinity of a semiconductor material used for the transistors, and either an amorphous semiconductor or a semiconductor with crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single-crystal semiconductor, or a semiconductor that partially comprises crystalline regions) can be used. Preferably, a semiconductor with crystallinity is used, in which case a deterioration of the transistor properties can be suppressed. The semiconductor layer of the transistor preferably contains a metal oxide. This means that a transistor containing a metal oxide in its channel-forming region (hereinafter referred to as an OS transistor) is preferably used in the display device of this embodiment. Examples of an oxide semiconductor with crystallinity include a c-axis aligned crystalline oxide semiconductor (CAAC-OS) and a nanocrystalline oxide semiconductor (nc-OS). Alternatively, a transistor containing silicon in its channel-forming region (a silicon transistor) can be used. Examples of silicon include monocrystalline silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor containing low-temperature polysilicon (LTPS) in its semiconductor layer (hereinafter also referred to as an LTPS transistor) can be used. The LTPS transistor exhibits high field-effect mobility and advantageous frequency characteristics. Using silicon transistors, such as LTPS transistors, a circuit requiring high-frequency operation (e.g., a source driver circuit) can be implemented on the same substrate as the display section. This simplifies the external circuitry mounted on the display device and reduces component and assembly costs. An open-circuit transistor (OS transistor) exhibits a much higher field-effect mobility than a transistor containing amorphous silicon. Furthermore, the OS transistor has a very low leakage current between a source and a drain in the off-state, and charges accumulated in a capacitor connected in series with the transistor can be retained for extended periods. Additionally, the use of an OS transistor can reduce the power consumption of the display device. To increase the luminance of the light-emitting device in the pixel circuit, the amount of current flowing through the light-emitting device must be increased. To increase the current, the source-drain voltage of a driver transistor in the pixel circuit must be increased. An OS transistor has a higher voltage rating between its source and drain than a Si transistor; therefore, a higher voltage can be applied between the source and drain of the OS transistor. Thus, when an OS transistor is used as the driver transistor in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing its luminance. Regarding the saturation characteristics of a current flowing when transistors operate in a saturation region, even if the source-drain voltage of an OS transistor gradually increases, a more stable current (saturation current) can be conducted through the OS transistor than through a Si transistor. Therefore, using an OS transistor as a driver transistor allows a stable current to be conducted through light-emitting devices, even if, for example, the current-voltage characteristics of the light-emitting devices vary. In other words, when the OS transistor operates in the saturation region, the source-drain current changes very little with an increase in the source-drain voltage; thus, the luminance of the light-emitting device can remain stable. As described above, by using OS transistors as driver transistors included in the pixel circuits, it is possible, for example, to suppress degradation of the black level, increase the luminance, increase the number of gray levels, and suppress fluctuations of light-emitting devices. For example, the semiconductor layer preferably contains indium, M (M is one or more of gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more of aluminum, gallium, yttrium, and tin. For the semiconductor layer, an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also known as IGZO) is particularly preferably used. An oxide containing indium, tin, and zinc is preferred. An oxide containing indium, gallium, tin, and zinc is preferred. An oxide containing indium (In), aluminum (Al), and zinc (Zn) (also known as IAZO) is preferred. An oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also known as IAGZO) is preferred. Alternatively, an oxide containing indium (also known as 10) is preferred. If the semiconductor layer is an In-M-Zn oxide, the atomic fraction of In is preferably higher than or equal to the atomic fraction of M in the In-M-Zn oxide. Examples of the atomic ratios of the metal elements in such an In-M-Zn oxide are In:M:Zn = 1:1:1, 1:1:1.2, 2:1:3, 3:1:2, 4:2:3, 4:2:4.1, 5:1:3, 5:1:6, 5:1:7, 5:1:8, 6:1:6, and 5:2:5, and a composition close to any of the above atomic ratios. It should be noted that "close to" the atomic ratio includes ±30% of an intended atomic ratio. If the atomic ratio is described as In:Ga:Zn = 4:2:3 or a composition close to it, this includes the case where the atomic fraction of Ga is greater than or equal to 1 and less than or equal to 3, and the atomic fraction of Zn is greater than or equal to 2 and less than or equal to 4, where the atomic fraction of In is 4. Furthermore, if the atomic ratio is described as In:Ga:Zn = 5:1:6 or a composition close to it, this includes the case where the atomic fraction of Ga is greater than 0.5 and less than or equal to 2, and the atomic fraction of Zn is greater than or equal to 5 and less than or equal to 7, where the atomic fraction of In is 5.Furthermore, if the atomic ratio is described as In:Ga:Zn = 1:1:1 or a composition close to it, the case is included in which the atomic fraction of Ga is greater than 0.5 and less than or equal to 2 and the atomic fraction of Zn is greater than 0.5 and less than or equal to 2, where the atomic fraction of In is 1. The transistors contained in circuit 356 and the transistors contained in pixel section 177 may have the same structure or different structures. One structure, or two or more types of structures, may be used for a variety of transistors contained in circuit 356. Similarly, one structure, or two or more types of structures, may be used for a variety of transistors contained in pixel section 177. All transistors contained in pixel section 177 can be OS transistors, or all transistors contained in pixel section 177 can be Si transistors. Alternatively, some of the transistors contained in pixel section 177 can be OS transistors, and the others can be Si transistors. For example, if both an LTPS transistor and an OS transistor are used in pixel section 177, the display device can exhibit low power consumption and high drive capability. It should be noted that a structure using an LTPS transistor and an OS transistor in combination is sometimes referred to as an LTPO. For instance, it is preferred that an OS transistor be used as a switch to control an electrical connection between lines, and an LTPS transistor be used as a current-controlling transistor. For example, a transistor contained in pixel section 177 serves as a transistor for controlling the current flowing through the light-emitting device and can be referred to as a driver transistor. A source and drain terminal of the driver transistor are electrically connected to the pixel electrode of the light-emitting device. An LTPS transistor is preferably used as the driver transistor. In this case, the amount of current flowing through the light-emitting device can be increased in the pixel circuit. Another transistor, contained within pixel section 177, acts as a switch to control whether a pixel is selected or not and can also be called a selection transistor. One gate of the selection transistor is electrically connected to a gate line, and one terminal of its source and drain are electrically connected to a source line (signal line). An OS transistor is preferably used as the selection transistor. In this case, the gray level of the pixel itself can be maintained at a very low frame rate (e.g., less than or equal to 1 fps); therefore, power consumption can be reduced by stopping the driver when displaying a still image. As described above, the display device of an embodiment of the present invention can all have a high aperture ratio, high resolution, high display quality and low power consumption. It should be noted that the display device of one embodiment of the present invention has a structure comprising the OS transistor and the light-emitting device with a metal maskless (MML) structure. This structure can greatly reduce leakage current that could flow through a transistor and leakage current that could flow between adjacent light-emitting devices (in some cases referred to as horizontal or lateral leakage current). By displaying images on the display device with this structure, the viewer can be provided with one or more of the crispness, sharpness, high color saturation, and high contrast ratio of an image.If a leakage current that could flow through the transistor and a lateral leakage current that could flow between the light-emitting devices are very low, light leakage during black display (deterioration of the black level) or the like can be minimized. In particular, in the case where a side-by-side (SBS) structure, which is the structure described above for the separate formation or coloration of light-emitting layers, is used in a light-emitting device with an MML structure, a layer provided between light-emitting devices (for example, also referred to as an organic layer or common layer shared between the light-emitting devices) is separated; consequently, lateral leakage current can be prevented or be very low. A connection section 204 is provided in an area of ​​substrate 351 that does not overlap with substrate 352. In the connection section 204, the conductor 355 is electrically connected to the FPC 353 via a conductive layer 166 and a connection layer 242. As an example, the conductive layer 166 has a multilayer structure consisting of the following films: a conductive film obtained by processing the same conductive film as conductive layers 224R, 224G, and 224B; a conductive film obtained by processing the same conductive film as conductive layers 151R, 151G, and 151B; and a conductive film obtained by processing the same conductive film as conductive layers 152R, 152G, and 152B. The conductive layer 166 is exposed at the top of the connection section 204. Therefore, the connection section 204 and the FPC 353 can be electrically connected to each other via the connection layer 242. The opaque layer 157 is preferably provided on the surface of the substrate 352 on the side of the substrate 351. The opaque layer 157 can be provided over an area between adjacent light-emitting devices, in the connecting section 140, in the circuit 356, and the like. Various optical components can be arranged on the outside of the substrate 352. A material suitable for substrate 120 can be used for either substrate 351 or 352. A material suitable for the resin layer 122 can be used for the adhesive layer 142. An anisotropic conductive film (ACF), anisotropic conductive paste (ACP), or the like can be used as the connecting layer 242. [Display device 600C] The display device 600C shown in Fig. 6 differs from the display device 600B shown in Fig. 5 mainly in that it has a bottom-emission structure. Light from the light-emitting device is emitted towards the substrate 351. Preferably, a material with high transmittance for visible light is used for the substrate 351. In contrast, there is no restriction regarding the light transmittance of a material used for the substrate 352. The opaque layer 157 is preferably formed between the substrate 351 and the transistor 201, as well as between the substrate 351 and the transistor 205. Fig. 6 shows an example in which the opaque layer 157 is provided over the substrate 351, an insulating layer 153 is provided over the opaque layer 157, and the transistors 201 and 205 and the like are provided over the insulating layer 153. The light-emitting device 130R comprises a conductive layer 112R, a conductive layer 126R above the conductive layer 112R and a conductive layer 129R above the conductive layer 126R. The light-emitting device 130B comprises a conductive layer 112B, a conductive layer 126B above the conductive layer 112B and a conductive layer 129B above the conductive layer 126B. A material with high transmittance for visible light is used for each of the conductive layers 112R, 112B, 126R, 126B, 129R and 129B. A material that reflects visible light is preferably used for the common layer 155. Although not shown in Fig. 6, the light-emitting device 130G is also provided. Although Fig. 6 and the like provide an example in which the top of layer 128 includes a flat section, the shape of layer 128 is not particularly restricted. This embodiment can be suitably combined with the other embodiments or examples. In this description, where a multitude of structural examples are shown for one embodiment, the structural examples can be combined as needed. (Version 4) In this embodiment, electronic devices of embodiments of the present invention are described. Electronic devices of this embodiment include the display device of an embodiment of the present invention in their display sections. The display device of an embodiment of the present invention is very reliable, and its resolution and definition can be easily increased. Therefore, the display device of an embodiment of the present invention can be used for display sections of various electronic devices. Examples of electronic devices include, in addition to electronic devices with a relatively large screen, such as a television, desktop and laptop PCs, a computer monitor and the like, digital signage and a large gaming machine, such as a pinball machine, a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable gaming console, a portable information terminal and an audio playback device. In particular, the display device of an embodiment of the present invention can have a high resolution and can therefore be advantageously used for an electronic device with a relatively small display area. Examples of such an electronic device include information terminals in the form of a wristwatch and a bracelet (wearable devices) and wearable devices that can be worn on the head, such as a VR device, a head-mounted display, a glasses-like AR device, and an MR device. The resolution of the display device in an embodiment of the present invention is preferably as high as HD (number of pixels: 1280 × 720), FHD (number of pixels: 1920 × 1080), WQHD (number of pixels: 2560 × 1440), WQXGA (number of pixels: 2560 × 1600), 4K (number of pixels: 3840 × 2160) or 8K (number of pixels: 7680 × 4320). In particular, a resolution of 4K, 8K or higher is preferred. The pixel density (resolution) of the display device of an embodiment of the present invention is preferably higher than or equal to 100 ppi, more preferably higher than or equal to 300 ppi, even more preferably higher than or equal to 500 ppi, even more preferably higher than or equal to 1000 ppi, even more preferably higher than or equal to 2000 ppi, even more preferably higher than or equal to 3000 ppi, even more preferably higher than or equal to 5000 ppi, even more preferably higher than or equal to 7000 ppi.With such a high-definition and / or high-resolution display device, the electronic device can provide a more realistic impression, depth perception, and the like. There is no particular limitation regarding the screen ratio (aspect ratio) of the display device in an embodiment of the present invention. For example, the display device is compatible with various screen ratios, such as 1:1 (one square), 4:3, 16:9, and 16:10. The electronic device in this embodiment may include a sensor (a sensor with a function for measuring force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, a chemical substance, sound, time, hardness, electric field, current, voltage, electrical power, radiation, flow rate, humidity, gradient, vibration, an odor, or infrared rays). The electronic device in this embodiment can have various functions. For example, the electronic device in this embodiment can have a function for displaying various information (e.g., a still image, a moving image, and a text image) on the display section, a touchscreen function, a function for displaying a calendar, the date, the time, and the like, a function for executing various types of software (programs), a wireless communication function, and a function for reading a program or data that is / are stored in a storage medium. Figures 7A and 7B describe examples of a wearable device that can be worn on the head. These wearable devices have at least one function for displaying AR content, one for displaying VR content, one for displaying SR content, and one for displaying MR content. The electronic device with a function for displaying content from at least one of AR, VR, SR, MR, and the like allows the user to experience a higher level of immersion. An electronic device 700A shown in Fig. 7A and an electronic device 700B shown in Fig. 7B each comprise a pair of display fields 751, a pair of housings 721, a communication section (not shown), a pair of support sections 723, a control section (not shown), an imaging section (not shown), a pair of optical components 753, a frame 757 and a pair of nose pads 758. The display device of an embodiment of the present invention can be used for the display fields 751. Therefore, a very reliable electronic device is obtained. The electronic devices 700A and 700B can each project images displayed on the display fields 751 onto display areas 756 of the optical components 753. Since the optical components 753 have a light-transmitting property, the user can see images displayed on the display areas that superimpose on transmission images viewed through the optical components 753. Consequently, the electronic devices 700A and 700B are electronic devices capable of performing AR display. In electronic devices 700A and 700B, a camera suitable for front-facing imaging can be provided as an imaging section. Furthermore, if electronic devices 700A and 700B are provided with an accelerometer, such as a gyroscope sensor, the orientation of the user's head can be detected, and an image corresponding to this orientation can be displayed on the display areas 756. The communication section includes a wireless communication device, and, for example, a video signal can be supplied through the wireless communication device. Alternatively, or in addition to the wireless communication device, a connecting element that can be connected to a cable for supplying a video signal and a power supply can be provided. The 700A and 700B electronic devices are supplied with a battery, allowing them to be charged wirelessly and / or via a wired connection. A touch sensor module can be provided in the 721 enclosure. The touch sensor module has a function for detecting touch on the exterior of the 721 enclosure. By detecting a tap, slide, or similar action from the user with the touch sensor module, various types of processing are enabled. For example, a moving image can be paused or resumed with a tap, and it can be fast-forwarded or rewound with a slide. If the touch sensor module is provided in each of the two 721 enclosures, the operational possibilities can be expanded. Various touch sensors can be applied to the touch sensor module. For example, one of the following types of touch sensors can be used: a capacitive type, a resistive type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, and an optical type. In particular, a capacitive sensor or an optical sensor is preferably used for the touch sensor module. In the case where an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light-receiving element. An inorganic semiconductor and / or an organic semiconductor can be used for an active layer of the photoelectric conversion device. The electronic device of an embodiment of the present invention can have a function for performing wireless communication with earphones 750. The earphones 750 comprise a communication section (not shown) and have a wireless communication function. The earphones 750 can receive information (e.g., audio data) from the electronic device using the wireless communication function. For example, the electronic device 700A in Fig. 7A has a function for transmitting information to the earphones 750 with the wireless communication function. The electronic device may include an earphone section. The electronic device 700B in Fig. 7B includes earphone sections 727. For example, the earphone section 727 may be connected to the control section by a conductor. Part of a conductor connecting the earphone section 727 and the control section may be located within the housing 721 or the wearable section 723. The electronic device may include an audio output port to which earphones, headphones, or the like can be connected. The electronic device may also include an audio input port and / or an audio input mechanism. For example, an audio input mechanism could be a sound-collecting device such as a microphone. The electronic device may function as a headset by including the audio input mechanism. It should be noted that the electronic device of an embodiment of the present invention, without limitation to the spectacle-like structure such as the electronic devices 700A and 700B, can be suitablely applied to a protective spectacle-like structure. The electronic device of an embodiment of the present invention can transmit information to earphones via wired or wireless means. An electronic device 6500 shown in Fig. 8A is a portable information terminal that can be used as a smartphone. The electronic device 6500 comprises a housing 6501, a display section 6502, a power button 6503, buttons 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display section 6502 has a touchscreen function. The display device of an embodiment of the present invention can be used in the display section 6502. Therefore, a very reliable electronic device is obtained. Fig. 8B is a schematic cross-sectional view including an end section of the housing 6501 that is closer to the microphone 6506. A protective component 6510 with a light-transmitting property is provided on the display surface side of the enclosure 6501. A display panel 6511, an optical component 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, and the like are provided in a space enclosed by the enclosure 6501 and the protective component 6510. The display panel 6511, the optical component 6512 and the touch sensor panel 6513 are attached to the protective component 6510 by a mounting layer (not shown). Part of the display panel 6511 is folded back in an area outside the display section 6502, and an FPC 6515 is connected to the folded-back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on the printed circuit board 6517. The display device of an embodiment of the present invention can be used in the display field 6511. Therefore, a very lightweight electronic device can be achieved. Since the display field 6511 is very thin, the high-capacity battery 6518 can be mounted without increasing the thickness of the electronic device. Furthermore, part of the display field 6511 is folded back, providing a connection section with the FPC 6515 on the rear of the pixel section, thus enabling the creation of an electronic device with a narrow bezel. Fig. 8C shows an example of a television set. In a television set 7100, a display section 7000 is installed in a housing 7171. Here, the housing 7171 is supported by a base 7173. The display device of an embodiment of the present invention can be used in the display section 7000. Therefore, a very reliable electronic device is obtained. The television set 7100 shown in Fig. 8C can be operated using an operating switch provided in the housing 7171 and a separate remote control 7151. Alternatively, the display section 7000 can include a touch sensor, and the television set 7100 can be operated by touching the display section 7000 with a finger or the like. The remote control 7151 can be provided with a display section for showing information output by the remote control 7151. The television channels and volume can be controlled by operating buttons or a touchscreen on the remote control 7151, and a video displayed on the display section 7000 can be controlled. It should be noted that the 7100 television set includes a receiver, a modem, and similar components. The receiver allows for the reception of general television broadcasts. When the television set is connected to a communication network via the modem, either wirelessly or via a fixed connection, one-way (from a sender to a receiver) or two-way (e.g., between a sender and a receiver or between receivers) information communication can take place. Fig. 8D shows an example of a laptop PC. A laptop PC 7200 comprises a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. The display section 7000 is built into the housing 7211. The display device of an embodiment of the present invention can be used in the display section 7000. Therefore, a very reliable electronic device is obtained. Fig. 8E and Fig. 8F show examples of digital signage that can be used for shop windows, display cases and the like. A digital signage device 7300, as shown in Fig. 8E, comprises a housing 7301, the display section 7000, a loudspeaker 7303, and the like. The digital signage device 7300 may also include an LED lamp, an operating button (including a power switch or an operating switch), a connection port, various sensors, a microphone, and the like. Fig. 8F shows a Digital Signage 7400 mounted on a cylindrical column 7401. The Digital Signage 7400 includes the display section 7000, which is provided along a curved surface of the column 7401. In Figs. 8E and 8F, the display device of an embodiment of the present invention can be used in the display section 7000. Therefore, a very reliable electronic device is obtained. A larger area of ​​ad space 7000 can increase the amount of information that can be presented at once. The larger ad space 7000 attracts more attention, thus increasing the effectiveness of advertising, for example. In particular, when the display device of an embodiment of the present invention is used for the Digital Signage 7300 and the Digital Signage 7400 shown in Figs. 8E and 8F, which display advertisements and the like, the display device, which is a translucent panel, can increase the flexibility of the display. A translucent display device can be produced, for example, by using a conductor and a carrier, each formed from a conductive film that transmits visible light, and by regulating the distance between pixel electrodes. By using the light-emitting tandem device of an embodiment of the present invention, in addition to the conductor and the carrier part, each formed from the conductive film that transmits visible light, the luminance per pixel can be increased. This means that an advantageous display can be achieved even if the aperture ratio of the display device is reduced; therefore, the light transmission property of the display section of the display device can be increased. Accordingly, such a structure is suitably used in the translucent display device of an embodiment of the present invention. As shown in Figures 8E and 8F, it is preferred that the Digital Signage 7300 or the Digital Signage 7400 can interact wirelessly with an information terminal device 7311 or an information terminal device 7411, such as a user's smartphone. For example, information from an advertisement displayed on the display section 7000 can be displayed on a screen of the information terminal device 7311 or the information terminal device 7411. By operating the information terminal device 7311 or the information terminal device 7411, a displayed image on the display section 7000 can be switched. It is possible to configure the Digital Signage 7300 or the Digital Signage 7400 to run a game using the screen of the Information Terminal 7311 or the Information Terminal 7411 as a controller. This allows an unlimited number of users to participate in and enjoy the game simultaneously. The electronic devices shown in Figs. 9A to 9G comprise a housing 9000, a display section 9001, a loudspeaker 9003, an operating button 9005 (including a power switch or an operating switch), a connection terminal 9006, a sensor 9007 (a sensor with a function for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, a chemical substance, sound, time, hardness, electric field, current, voltage, electrical energy, radiation, flow rate, humidity, gradient, vibration, an odor or infrared rays), a microphone 9008 and the like. The electronic devices shown in Figures 9A to 9G have various functions. For example, the electronic devices may have a function for displaying various types of information (e.g., a still image, a moving image, and a text image) on the display section, a touchscreen function, a function for displaying a calendar, date, time, and the like, a function for controlling processing using various types of software (programs), a wireless communication function, and a function for reading and processing a program or data stored on a storage medium. It should be noted that the functions of the electronic devices are not limited to these and the electronic devices may have various functions. The electronic devices may include a variety of display sections.The electronic devices may each be equipped with a camera or the like and have a function for taking a still image or a moving image, a function for storing the recorded image in a storage medium (an external storage medium or a storage medium built into the camera), a function for displaying the recorded image on the display section, and the like. The electronic devices shown in Figs. 9A to 9G are described in detail below. Fig. 9A is a perspective view of a portable information terminal 9171. For example, the portable information terminal 9171 can be used as a smartphone. The portable information terminal 9171 can include the speaker 9003, the connection port 9006, the sensor 9007, or the like. The portable information terminal 9171 can display text and image information on its various surfaces. Fig. 9A shows an example in which three icons 9050 are displayed. In addition, information 9051, represented by dashed rectangles, can be displayed on another surface of the display section 9001. Examples of the information 9051 include a notification of the arrival of an email, an SNS message, an incoming call, or the like; the subject and sender of an email, an SNS message, or the like; the date; the time; the remaining battery power; and the intensity of a radio wave.Alternatively, the icon 9050 or similar can be displayed in the position where the information 9051 is displayed. Figure 9B is a perspective view of a portable information terminal 9172. The portable information terminal 9172 has a function for displaying information on three or more surfaces of the display section 9001. In the example shown here, information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, the user of the portable information terminal 9172 can check the information 9053, which is displayed such that it can be viewed from above the portable information terminal 9172, with the portable information terminal 9172 kept in a breast pocket of their clothing. Thus, for example, the user can see the display without removing the portable information terminal 9172 from their pocket and can decide whether to answer the call. Fig. 9C is a perspective view of a tablet terminal 9173. The tablet terminal 9173 is suitable, for example, for running various applications, such as making mobile phone calls, sending and receiving emails, viewing and editing texts, playing music, using the Internet, and playing computer games. The tablet terminal 9173 comprises the display section 9001, a camera 9002, the microphone 9008, and the speaker 9003 on the front of the housing 9000; the operating buttons 9005 on the left side of the housing 9000; and the connection port 9006 on the bottom of the housing 9000. Fig. 9D is a perspective view of a portable information terminal 9200 in the form of a wristwatch. The portable information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The portable information terminal 9200 can include the operating button 9005 as a knob for operation on the left side surface of the case 9000 and the sensor 9007 on the underside of the case 9000. Although the case 9000, which has a curved wristband shape, is shown as an example, a belt or the like can be used in combination with the case 9000 to make the portable information terminal 9200 wearable. The display surface of the display section 9001 is curved, and an image can be displayed on the curved display surface. An energy storage device 9004 can have a curved shape along the case 9000.The energy storage device 9004 is flexible and can be bent to accommodate changes in shape when the user puts on or takes off the portable information terminal 9200. A charging control IC connected to the energy storage device 9004 can be provided. Furthermore, two-way communication between the portable information terminal 9200 and a headset suitable for wireless communication is possible, enabling hands-free telephone calls. The portable information terminal 9200 can wirelessly transmit data to another information terminal and can be charged wirelessly. The connection port 9006 can be provided in the housing 9000, allowing for wired data transmission and charging. Figures 9E to 9G are perspective views of a foldable portable information terminal 9201. Figure 9E is a perspective view showing the portable information terminal 9201 unfolded. Figure 9G is a perspective view showing the portable information terminal 9201 folded. Figure 9F is a perspective view showing the portable information terminal 9201 being moved from one of the states shown in Figures 9E and 9G to the other. When the portable information terminal 9201 is unfolded, a seamless, large display area is readily searchable. The display section 9001 of the portable information terminal 9201 is supported by three housings 9000 connected to each other by hinges 9055. For example, the display section 9001 can be folded with a radius of curvature greater than or equal to 0.1 mm and less than or equal to 150 mm. This embodiment can be suitably combined with the other embodiments or examples. In this description, where a multitude of structural examples are shown for one embodiment, the structural examples can be combined as needed. [Example 1] <<Synthesebeispiel 1> > In this synthesis example, a method for synthesizing the organic compound of an embodiment of the present invention, 2-(3-(2,6-Dimethylpyridin-3-yl)-{[3',5'-bis(trimethylsilyl)]-biphenyl}-5-yl)-4,6-diphenyl-1,3,5-triazine (abbreviation: mmTMSPh-mDMePyPTzn) (structural formula (100)), and its physical properties are described. <Schritt 1: Synthese von 2-[3-(2,6-Dimethylpyridin-3-yl)-5-(4,6-diphenyl-1,3,5-triazin)]phenyl-4,4,5,5-tetramethyl-1,3,2-dioxaborolan> In a three-necked flask, 7.0 g (16 mmol) of 2-[3-chloro-5-(2,6-dimethylpyridin-3-yl)phenyl]-4,6-diphenyl-1,3,5-triazine, 5.9 g (23 mmol) of bis(pinacolato)diborone, 4.2 g (43 mmol) of potassium acetate, and 230 ml of 1,4-dioxane were added, and the mixture was degassed by stirring under reduced pressure. After degassing, 0.14 g (0.28 mmol) of 2-dicyclohexylphosphino-2',4',6'-triisopropylbiphenyl (abbreviation: XPhos) and 32 mg (0.14 mmol) of palladium(II) acetate were added, and the mixture was stirred for 14 hours at 100 °C. After completion of the reaction, water was added to the resulting reaction mixture, and the mixture was separated into an organic layer and an aqueous layer. Toluene was added to the aqueous layer, and extraction was carried out. The resulting toluene layer and the organic layer were mixed, and magnesium sulfate was added to adsorb moisture.This mixture was subjected to gravity filtration, and the resulting filtrate was concentrated to obtain a pale yellow solid. This solid was purified by silica gel column chromatography using a mobile phase of toluene and ethyl acetate in a ratio of 10:1, which was then changed to 3:1. The resulting solution was concentrated to obtain 8.1 g of a pale yellow target solid in a yield of 96%. The synthesis scheme of step 1 is shown below in formula (a-1). Analysis results by nuclear magnetic resonance (1H-NMR) spectroscopy of the pale yellow solid obtained in the preceding step 1 are shown below. Fig. 13 is a 1H-NMR diagram, and Fig. 14 is an enlarged diagram in the range of 6.5 ppm to 9.5 ppm in Fig. 13. It should be noted that the singlet peak at about 2.36 ppm and the multiplet peaks at about 7.17 to 7.25 ppm originate from toluene, which is used as a cleaning solvent. 1H NMR. δ (CDCl3, 300 MHz): 1.42 (s, 12H), 2.57 (s, 3H), 2.62 (s, 3H), 7.11 (d, 1H, J = 7.5 Hz), 7.54-7.63 (m, 7H), 7.99-8.00 (m, 1H), 8.77-8.82 (m, 5H), 9.13-9.14 (m, 1H). <Schritt 2: Synthese von mmTMSPh-mDMePyPTzn> Into a three-necked flask, 1.3 g (2.4 mmol) 2-[3-(2,6-Dimethylpyridin-3-yl)-5-(4,6-diphenyl-1,3,5-triazine)]phenyl-4,4,5,5-tetramethyl-1,3,2-dioxaborolane obtained in step 1, 0.66 g (2.2 mmol) 3,5-bis(trimethylsilyl)bromobenzene, 0.60 g (4.4 mmol) potassium carbonate, 25 ml toluene, 5 ml ethanol and 3 ml water were added, and the mixture was degassed by stirring under reduced pressure. After degassing, 90 mg (0.22 mmol) of 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl (abbreviation: SPhos) and 9.8 mg (48 µmol) of palladium(II) acetate were added, and the mixture was stirred at 80 °C for 14 hours. Upon completion of the reaction, the mixture was separated into an organic layer and an aqueous layer. The resulting aqueous layer was extracted with toluene, followed by mixing with the resulting organic layer, and magnesium sulfate was added to adsorb moisture.This mixture was subjected to gravity filtration, and the filtrate obtained was concentrated to yield a yellow solid. This solid was purified by silica gel column chromatography using a mobile phase of toluene and ethyl acetate in a ratio of 30:1, which was then changed to 20:1, to obtain 1.19 g of a pale yellow solid. This solid was recrystallized with toluene and ethanol to obtain 0.88 g of a white target solid in a 58% yield. 0.87 g of the obtained solid were purified by train sublimation. In the sublimation purification, the solid was heated for 18 hours at 235 °C under a pressure of 5.8 Pa. After sublimation purification, 0.77 g of a white solid was obtained in an 89% yield. The synthesis scheme of step 2 is shown below in (a-2). Analysis results by nuclear magnetic resonance (1H-NMR) spectroscopy of the white solid obtained in the preceding step 2 are shown below. Fig. 15 is a 1H-NMR diagram, and Fig. 16 is a magnified diagram in the range of 6.5 ppm to 9.5 ppm in Fig. 15. These results reveal that the organic compound of an embodiment of the present invention, mmTMSPh-mDMePyPTzn, was obtained in this example. 1H NMR. δ (CDCl3, 300 MHz): 0.37 (s, 18H), 2.63 (s, 3H), 2.65 (s, 3H), 7.17 (d, 1H, J = 8.1 Hz), 7.55-7.65 (m, 7H), 7.75-7.76 (m, 2H), 7.88 (d, 2H, J = 0.9 Hz), 8.69 (t, 1H, J = 1.5 Hz), 8.77-8.80 (m, 4H), 9.04 (t, 1H, J = 1.7 Hz). <Messung der Emissions- und Absorptionsspektren> Fig. 17 shows the measurement results of an absorption spectrum and an emission spectrum of a dichloromethane solution of mmTMSPh-mDMePyPTzn. Fig. 18 shows the absorption and emission spectra of a thin film of mmTMSPh-mDMePyPTzn. The thin film was formed by a vacuum evaporation process over a quartz substrate. The absorption spectrum of the dichloromethane solution was measured with a UV-VIS spectrophotometer (V-770DS, manufactured by JASCO Corporation), and the spectrum of dichloromethane alone in a quartz cell was subtracted. The absorption spectrum of the thin film was measured with a spectrophotometer (U-4100 spectrophotometer, manufactured by Hitachi High-Technologies Corporation). The emission spectra were measured with a fluorescence spectrophotometer (FP-8600, manufactured by JASCO Corporation). As shown in Fig. 17, the dichloromethane solution of mmTMSPh-mDMePyPTzn exhibits an absorption spectrum peak at a wavelength of 270 nm and an emission spectrum peak at a wavelength of 390 nm (excitation wavelength: 270 nm). As shown in Fig. 18, the thin film of mmTMSPh-mDMePyPTzn exhibits an absorption spectrum peak at a wavelength of 265 nm and an emission spectrum peak at a wavelength of 390 nm (excitation wavelength: 310 nm). It was determined from Figs. 17 and 18 that mmTMSPh-mDMePyPTzn exhibits no absorption in the visible range (at wavelengths longer than 450 nm). <Messung des Brechungsindex> Fig. 19 shows the results of the refractive index measurement of the mmTMSPh-mDMePyPTzn film using a spectroscopic ellipsometer (M-2000U, manufactured by JA Woollam Japan Corp.). The film used for the measurement was formed with the material by a vacuum evaporation process to a thickness of approximately 50 nm over a quartz substrate. It should be noted that a refractive index for an ordinary ray, n, Ordinary, and a refractive index for an extraordinary ray, n, Extra-ordinary, are shown in Fig. 19. As shown in Fig. 19, the mmTMSPh-mDMePyPTzn film has a decent refractive index in the range of 1.50 to 1.75 for the entire blue emission range (at wavelengths of 455 nm and 465 nm) and also a decent refractive index at a wavelength of 633 nm in the range of 1.45 to 1.70, which suggests that the film has a low refractive index. <Messung der GSP-Steigung> Next, the GSP slope of an evaporation-formed film of mmTMSPh-mDMePyPTzn was measured. The measurement was carried out using the method described for embodiment 1. The results are shown in Table 3. For comparison, Table 3 also shows the GSP slope of an evaporation-formed film of 2-{3-(2,6-dimethylpyridin-3-yl)-5-[(3,5-di-tert-butyl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated mmtBuPh-mDMePyPTzn). The chemical formula of mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention, and the chemical formula of mmtBuPh-mDMePyPTzn, which is a reference organic compound, are shown below. [Table 3] [Table 3] mmTMSPh-mDMePyPTzn35.0 mmtBuPh-mDMePyPTzn44,3 As shown in Table 3, mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention, exhibits a lower GSP slope in the form of a film than mmtBuPh-mDMePyPTzn, which is a comparable organic compound. In mmTMSPh-mDMePyPTzn, the trisubstituted silyl groups have a structure in which the quaternary carbon atoms of the two tert-butyl groups of mmtBuPh-mDMePyPTzn are each replaced by a silicon atom. It can be assumed that, since a silicon atom has a lower electronegativity than a carbon atom, mmTMSPh-mDMePyPTzn had a smaller permanent electric dipole moment than mmtBuPh-mDMePyPTzn and that the SOP of the evaporation-formed film of mmTMSPh-mDMePyPTzn was accordingly reduced, resulting in the small GSP slope. <Berechnung des permanenten elektrischen Dipolmoments> Next, the permanent electric dipole moments of the stable singlet ground state structures of mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention, and mmtBuPh-mDMePyPTzn, which is an organic reference compound, were analyzed. A density functional theory (DFT) method was used as the computational procedure. B3LYP was used as the functional, and 6-311G(d,p) as the basis function. Gaussian 16 was used as the computer program. Fig. 20A represents the stable structure of mmTMSPh-mDMePyPTzn used for the calculation. Fig. 20B shows the stable structure of mmTMSPh-mDMePyPTzn in Fig. 20A viewed from the y-axis, and Fig. 20C shows the stable structure viewed from the x-axis. Fig. 21A represents the stable structure of mmtBuPh-mDMePyPTzn used for the calculation. Fig. 21B shows the stable structure of mmtBuPh-mDMePyPTzn in Fig. 21A viewed from the y-axis, and Fig. 21C shows the stable structure viewed from the x-axis. As can be seen from Figs. 20A to 20C and Figs. 21A to 21C, the stable structures of mmTMSPh-mDMePyPTzn and mmtBuPh-mDMePyPTzn used for the calculation have similar conformations.This means that the calculation for the stable structures was performed under the assumption that their initial structures, with the exception of the trimethylsilyl group and the tert-butyl group, have the same conformation. In other words, the comparison was unaffected by conformational differences other than the difference between the trimethylsilyl group and the tert-butyl group. Table 4 shows the calculated values ​​of the permanent electric dipole moments of mmTMSPh-mDMePyPTzn and mmtBuPh-mDMePyPTzn.[Table 4] <row> <cell>mmTMSPh-mDMePyPTzn< / cell> <cell> 1,66< / cell> < / row> <row> <cell> mmtBuPh-mDMePyPTzn< / cell> <cell> 1,89< / cell> < / row> <p xml:id="_815f8c1098" n="0408">Table 4 shows that mmTMSPh-mDMePyPTzn has a smaller permanent electric dipole moment than mmtBuPh-mDMePyPTzn. The same trend was found when the permanent electric dipole moments of other mmTMSPh-mDMePyPTzn, whose conformation is similar to that in Figures 20A to 20C and in which the conformation of the stable substituent structure differs from that in Figures 20A to 20C, were compared with other mmtBuPh-mDMePyPTzn, whose conformation is similar to that in Figures 21A to 21C and in which the conformation of the stable substituent structure differs from that in Figures 21A to 21C. Even if, for example, a structure obtained by rotating the dimethylpyridinyl group in the stable structure of mmTMSPh-mDMePyPTzn in Fig.When the structure formed by rotating the dimethylpyridinyl group by 180° around the bond between the dimethylpyridinyl group and the benzene ring to which the dimethylpyridinyl group is bonded in Fig. 20A was compared with a structure formed by rotating the dimethylpyridinyl group by 180° in the stable structure of mmtBuPh-mDMePyPTzn in Fig. 21A, it was found that mmTMSPh-mDMePyPTzn has a smaller permanent electric dipole moment than mmtBuPh-mDMePyPTzn. <p xml:id="_815f8c1099" n="0409"> Based on the preceding results, it was found that the reason the GSP slope of the evaporation-formed film of mmTMSPh-mDMePyPTzn is smaller than the GSP slope of the evaporation-formed film of mmtBuPh-mDMePyPTzn is as follows: The molecule of mmTMSPh-mDMePyPTzn has a smaller permanent electric dipole moment than that of mmtBuPh-mDMePyPTzn. This reveals that the GSP slope of the evaporation-formed film can be reduced by introducing trisubstituted silyl groups with a structure in which the quaternary carbon atoms contained in the tert-butyl groups are each replaced by a silicon atom into the organic compound instead of the tert-butyl groups themselves. [Example 2] <p xml:id="_815f8c1101" n="0410">This example describes the fabrication of a light-emitting device G-1 and a light-emitting device G-4, each containing mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention described in Example 1, and a light-emitting reference device G-2, a light-emitting reference device G-3, and a light-emitting reference device G-5, each containing an organic reference compound, as well as the measurement results of the device. These light-emitting devices emit green phosphorescent light. Structural formulas of the organic compounds used for the light-emitting devices are shown below. <lb / > <figure xml:id="_815f8c1103" n="0001" type="chem" style="portrait" facs="0048"> <graphic height="123" width="179" source="DE102025152253A1_0049.tif" url=" / 2703d916-4d4c-4a97-ba3f-0eee51c5cf2d_DE102025152253A1_0049" / > <media mimeType="image / tif" url="DE102025152253A1_0049.tif" / > < / figure> <figure xml:id="_815f8c1104" n="0001" type="chem" style="portrait" facs="0049"> <graphic height="171" width="153" source="DE102025152253A1_0050.tif" url=" / 2703d916-4d4c-4a97-ba3f-0eee51c5cf2d_DE102025152253A1_0050" / > <media mimeType="image / tif" url="DE102025152253A1_0050.tif" / > < / figure> <p xml:id="_815f8c1105" n="0411">As shown in Fig. 11, the light-emitting devices each have a structure in which a hole injection layer 911, a hole transport layer 912, a light-emitting layer 913, electron transport layers (a first electron transport layer 914_1 and a second electron transport layer 914_2) and an electron injection layer 915 are arranged one above the other in this order over a first electrode 901 formed over a glass substrate 900, and a second electrode 902 is formed over the second electron injection layer 915. <Herstellungsverfahren der Licht emittierenden Vorrichtung G-1> <p xml:id="_815f8c1107" n="0412">Indium tin oxide containing silicon oxide (ITSO) was deposited by sputtering to a thickness of 70 nm over the glass substrate 900, so that the first electrode 901 was formed as a transparent electrode. The electrode area was set to 4 mm². <hi rend="superscript"> 2< / hi> (2 mm × 2 mm) set. <p xml:id="_815f8c1109" n="0413">Next, in a pretreatment to form the light-emitting device above the substrate, the substrate surface was washed with water, and baking was carried out for 1 hour at 200 °C. The substrate was then transferred to a vacuum evaporation unit where the pressure was reduced to approximately 1 × 10⁻⁶ <hi rend="superscript"> -4< / hi> The Pa value was reduced, and vacuum baking was carried out for 30 minutes at 170 °C in a heating chamber of the vacuum evaporation unit. Afterwards, natural cooling was performed. <p xml:id="_815f8c1111" n="0414">The substrate, provided with the first electrode 901, was then attached to a substrate holder in the vacuum evaporation apparatus such that the surface on which the first electrode 901 was formed faced downwards. N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF) and a fluorine-containing electron acceptor material with a molecular weight of 672 (OCHD-003) were co-deposited by evaporation to a thickness of 10 nm in a weight ratio of 1:0.03 (PCBBiF:OCHD-003), thereby forming the hole injection layer 911. <p xml:id="_815f8c1112" n="0415"> Then, PCBBiF was deposited over the hole injection layer 911 by evaporation to a thickness of 40 nm, forming the hole transport layer 912. <p xml:id="_815f8c1113" n="0416">Subsequently, 912 8-(p-Terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8mpTP-4mDBtPBfpm), 9-(2-Naphthyl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviation: βNCCP) and [2-d <hi rend="subscript"> 3< / hi> -Methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d <hi rend="subscript"> 3< / hi> -methyl-2-pyridinyl-κN <hi rend="superscript"> 2< / hi> )phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d <hi rend="subscript"> 3< / hi> ) <hi rend="subscript"> 2< / hi> (mbfpypy-d <hi rend="subscript"> 3< / hi> )) by co-evaporation in a thickness of 40 nm in a weight ratio of 0.5:0.5:0.1 (8mpTP-4mDBtPBfpm: βNCCP: Ir(5mppy-d <hi rend="subscript"> 3< / hi> ) <hi rend="subscript"> 2< / hi> (mbfpypy-d <hi rend="subscript"> 3< / hi> )) deposited, thereby forming the light-emitting layer 913. <p xml:id="_815f8c1123" n="0417">Next, the first electron transport layer 914_1 was formed to a thickness of 20 nm by evaporation of 2-{3-[3-(N-Phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq) over the light-emitting layer 913. Then, the second electron transport layer 914_2 was formed by co-evaporation of mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention, and 8-quinolinolato-lithium (abbreviation: Liq) in a weight ratio of 1:1 (mmTMSPh-mDMePyPTzn: Liq) to a thickness of 20 nm. <p xml:id="_815f8c1124" n="0418"> Then, lithium fluoride (LiF) was deposited over the second electron transport layer 914_2 by evaporation to a thickness of 1 nm, thereby forming the electron injection layer 915. <p xml:id="_815f8c1125" n="0419">Next, the second electrode 902 was formed by evaporating aluminum (Al) to a thickness of 100 nm over the electron injection layer 915. Thus, the light-emitting device G-1 was produced. <Herstellungsverfahren der Licht emittierenden Vergleichsvorrichtung G-2> <p xml:id="_815f8c1127" n="0420"> The light-emitting reference device G-2 differs from the light-emitting device G-1 in that mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention and is used for the second electron transport layer 914_2, is replaced by mmtBuPh-mDMePyPTzn, which is an organic reference compound. Other components were prepared in a similar manner to those of the light-emitting device G-1. <Herstellungsverfahren der Licht emittierenden Vergleichsvorrichtung G-3> <p xml:id="_815f8c1129" n="0421">The light-emitting reference device G-3 differs from the light-emitting device G-1 in that the second electron transport layer 914_2 was formed by evaporation of 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), an organic reference compound, to a thickness of 20 nm. Other components were prepared in a similar manner to those of the light-emitting device G-1. <Herstellungsverfahren der Licht emittierenden Vorrichtung G-4> <p xml:id="_815f8c1131" n="0422">Light-emitting device G-4 differs from light-emitting device G-1 in that the first electron transport layer 914_1 was formed by evaporation of mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention, to a thickness of 20 nm, and that the second electron transport layer 914_2 was formed by co-evaporation of 2-[3-(2,6-dimethyl-3-pyridyl)-5-(9-phenanthryl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn) and liquid in a weight ratio of 1:1 (mPn-mDMePyPTzn:liq) to a thickness of 20 nm. Other components were prepared in a similar manner to those of light-emitting device G-1. <Herstellungsverfahren der Licht emittierenden Vergleichsvorrichtung G-5> <p xml:id="_815f8c1133" n="0423">Light-emitting device G-5 differs from light-emitting device G-4 in that mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention and is used in the first electron transport layer 914_1 of light-emitting device G-4, has been replaced by 2mPCCzPDBq, which is a comparable organic compound. Other components were prepared in a similar manner to those of light-emitting device G-4. <p xml:id="_815f8c1134" n="0424">Table 5 lists the device structures of the light-emitting device G-1 and the light-emitting comparison devices G-2 and G-3. Table 6 lists the device structures of the light-emitting device G-4 and the light-emitting comparison device G-5. <lb / > [Table 5] <title desc="title"> [Table 5]< / title> second electrode 100 nmAl Electron injection layer 1 nm LiF Electron transport layer 220 nm mm TMS Ph-mD MePyPTzn:Liq1(1:1) mmt BuPh-mDM MePyPTzn:Liq(1:1) mPPhen2P 120 nm2mPCCzPDBq Light-emitting layer 40 nm 8mpTP-4mD BtPBfpm :βNCCP: Ir(5mppy-d3)2(mbfpypy-d3) (0,5: 0,5: 0,1) Hole transport layer40 nmPCBBiF Hole injection layer10 nmPCBBiF:OCHO-003 (1:0.03) first electrode 70 nm MITSO [Table 6] [Table 6] second electrode 100 nmAl Electron injection layer 1 nm LiF Electron transport layer220 nmPn-mDMePyPTzn:Liq (1:1) 120 nmmmTMSPh-mDMePyPTzn2mPCCzPDBq Light-emitting layer 40 nm 8mpTP-4mDBtPBfpm:βNCCP: Ir(5mppy-d3)2(mbfpypy-d3) (0,5: 0,5: 0,1) Hole transport layer40 nmPCBBiF Hole injection layer10 nmPCBBiF:OCHD-003 (1:0.03) first electrode 70 nm MITSO <Eigenschaften der Licht emittierenden Vorrichtung> The light-emitting devices were sealed using a glass substrate in a glove box containing a nitrogen atmosphere to prevent exposure to atmospheric air (a sealing material was applied to completely enclose the devices, and during sealing, a UV treatment and a heat treatment at 80 °C for one hour were performed). The properties of the light-emitting devices were then measured. Fig. 24 shows luminance-current density characteristics of the light-emitting device G-1 and the light-emitting comparator devices G-2 and G-3. Fig. 25 shows luminance-voltage characteristics of these. Fig. 26 shows current-efficiency-luminance characteristics of these. Fig. 28 shows external quantum efficiency-luminance characteristics of these. Fig. 29 shows electroluminescence spectra of these. Fig. 27 shows current-voltage characteristics of the light-emitting device G-1 and the light-emitting comparator device G-2. Fig. 30 shows capacitance-voltage characteristics of these. Fig. 31 shows changes in luminance over the operating time when operating the light-emitting device G-1 and the light-emitting comparator devices G-2 and G-3 at a constant current of 2 mA (50 mA / cm²). Fig. 32 shows luminance-current density characteristics of the light-emitting device G-4 and the light-emitting comparison device G-5.Figure 33 shows luminance-voltage properties of this. Figure 34 shows current-efficiency-luminance properties of this. Figure 35 shows current-density-voltage properties of this. Figure 36 shows external quantum-efficiency-luminance properties of this. Figure 37 shows electroluminescence spectra of this. In the legends in Fig. 24, Fig. 25, Fig. 26, Fig. 27, Fig. 28, Fig. 29, Fig. 30, Fig. 31, Fig. 32, Fig. 33, Fig. 34, Fig. 35, Fig. 36 to Fig. 37, the light-emitting device G-1, the light-emitting comparison device G-2, the light-emitting comparison device G-3, the light-emitting device G-4 and the light-emitting comparison device G-5 are represented by device G-1, comparison device G-2, comparison device G-3, device G-4 and comparison device G-5 respectively. Table 7 shows the main properties of the light-emitting devices at a luminance of approximately 1000 cd / m². It should be noted that the luminance, CIE chromaticity, and emission spectra were measured using a spectroradiometer (SR-UL1R, manufactured by TOPCON TECHNOHOUSE CORPORATION). The external quantum efficiency was calculated from the luminance and emission spectra measured by the spectroradiometer, assuming that the devices exhibited Lambertian light distribution characteristics. [Table 7] Light-emitting device G-13,200,03180,7940,3690,60981010226,7 Light-emitting comparator G-23,400,04281,070,3690,609109210226,7 Light-emitting comparator G-32,800,03290,8220,3670,61181810025,9 Light-emitting device G-42,800,02590,6470,3620,61469010727,8 Light-emitting comparator G-52,800,02940,7360,3660,61275910326,9 From Fig. 24, Fig. 25, Fig. 26, Fig. 27, Fig. 28, Fig. 29, Fig. 30, Fig. 31, Fig. 32, Fig. 33, Fig. 34, Fig. 35, Fig. 36 to Fig. 37 and Table 7, it was determined that the light-emitting devices G-1 and G-4 are light-emitting devices with advantageous properties that emit green light originating from Ir(5mppyd3)2(mbfpypy-d3). Figures 25 and 27 show that the operating voltage of the light-emitting device G-1 is lower than that of the light-emitting comparison device G-2 at low luminance or low current density. Figures 26 and 28 show that the light-emitting device G-1 has a higher emission efficiency than the light-emitting comparison device G-3. Fig. 30 shows that the voltage of the light-emitting device G-1 is lower than that of the light-emitting comparison device G-2. It should be noted that Vinj represents the voltage required for the injection of electrons from the electron injection layer 915 or the second electrode 902 into the second electron transport layer 914_2. This indicates that the light-emitting device G-1 allows electrons to be injected into the second electron transport layer 914_2 at a lower voltage than in the light-emitting comparison device G-2. Fig. 31 shows that the light-emitting device G-1 has a change in luminance over the operating time that is the same as that of the light-emitting comparison device G-2 and the light-emitting comparison device G-3, and has a long service life. Figures 33 and 35 show that the light-emitting device G-4 has a lower operating voltage than the light-emitting comparison device G-5. Figures 34 and 36 show that the light-emitting device G-4 has a higher emission efficiency than the light-emitting comparison device G-5. Table 8 shows the ordinary refractive indices (no) and GSP slopes of the films of principal organic compounds formed by evaporation and used in the light-emitting devices. The ordinary refractive indices at a wavelength of 633 nm are shown as ordinary refractive indices in Table 8. A spectroscopic ellipsometer (M-2000U, manufactured by JA Woollam Japan) was used to measure the ordinary refractive indices, and the material for each layer was deposited by a vacuum evaporation process to a thickness of 50 nm over a quartz substrate to form films that were used as measurement samples. The GSP slopes of the films of the organic compounds in Table 8 were measured by the method described for embodiment 1. [Table 8] mPPhen2P1,801.5 2mPCCzPDBq1,8812,4 mmtBuPh-mDMePyPTzn1,6244,3 mmTMSPh-mDMePyPTzn1,6035,0 As shown in Table 8, the film of mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention, has a lower refractive index than the films of mPPhen2P and 2mPCCzPDBq and has a smaller GSP slope than the film of mmtBuPh-mDMePyPTzn. As described above, it was found that the light-emitting device G-1 exhibits a lower Vinj slope than the light-emitting comparator device G-2 and allows electrons to be injected into the second electron transport layer 914_2 at a lower voltage than in the light-emitting comparator device G-2. It was also found that the operating voltage of the light-emitting device G-1 is lower than that of the light-emitting comparator device G-2 at low luminance or low current density. These results can be explained by the fact that mmTMSPh-mDMePyPTzn, used in the light-emitting device G-1 as shown in Table 6, has a smaller GSP slope than mmtBuPh-mDMePyPTzn, used in the light-emitting comparator device G-2 as shown in Table 6.In other words, the light-emitting device G-1 achieved the following: by using mmTMSPh-mDMePyPTz, which, in film form, has a lower GSP slope, electrons could be injected into the second electron transport layer 914_2 at a lower voltage. Furthermore, by achieving electron injection into the second electron transport layer 914_2 at a lower voltage, the operating voltage of the light-emitting device could be reduced. The foregoing results reveal that the light-emitting device, in which the organic compound of an embodiment of the present invention is used, exhibits a low operating voltage and a high emission efficiency. This is because, in the light-emitting device, the organic compound of an embodiment of the present invention, in the electron transport layer, enables higher efficiency of light extraction from the light-emitting layer and effective application of a voltage to the light-emitting layer, since the organic compound of an embodiment of the present invention has a low refractive index and a small GSP slope in the form of a film. Since the organic compound of an embodiment of the present invention has a small GSP slope in the form of a film, and the light-emitting device can have a low Vinjzur injection into the second electron transport layer, a wider range of materials can be used for the first electron transport layer 914_1 and the light-emitting layer 913 in the light-emitting device in which the organic compound of an embodiment of the present invention is used. This indicates that the organic compound of an embodiment of the present invention can be used suitablely for light-emitting devices with different structures.Furthermore, it is noted that the organic compound of an embodiment of the present invention is suitable for use in a charge carrier transport layer in a display device in which the charge carrier transport layer is divided by a plurality of pixels with different emission colors. [Example 3] This example describes the fabrication of a light-emitting device B-1 and a light-emitting device B-3, each containing mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention described in Example 1, and a light-emitting reference device B-2 and light-emitting reference devices B-4 to B-6, each containing an organic reference compound, as well as the measurement results of the device. These light-emitting devices emit blue fluorescent light. Structural formulas of the organic compounds used for the light-emitting devices are shown below. As shown in Fig. 12, the light-emitting devices each have a structure in which a hole injection layer 911, hole transport layers (a first hole transport layer 912_1 and a second hole transport layer 912_2), a light-emitting layer 913, electron transport layers (a first electron transport layer 914_1 and a second electron transport layer 914_2) and an electron injection layer 915 are arranged one above the other in this order over a first electrode 901, which is formed over a glass substrate 900. <Herstellungsverfahren der Licht emittierenden Vorrichtung B-1> Indium tin oxide containing silicon oxide (ITSO) was deposited by sputtering to a thickness of 55 nm over the glass substrate 900, so that the first electrode 901 was formed as a transparent electrode. The electrode area was set to 4 mm² (2 mm × 2 mm). Next, as in the manufacturing process of the light-emitting device G-1 described in Example 2, a pretreatment for manufacturing the light-emitting device over a substrate and vacuum baking were carried out. Afterwards, natural cooling was performed. Next, after the hole injection layer 911 had been formed as in the fabrication process of the light-emitting device G-1 in Example 2, the first hole transport layer 912_1 was formed by evaporating PCBBiF to a thickness of 25 nm over the hole injection layer 911. Then the second hole transport layer 912_2 was formed by evaporating N,N-Bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP) to a thickness of 10 nm. Next, 9-(1-Naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth) and N,N-Diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02) were deposited over the second hole transport layer 912_2 by co-evaporation in a thickness of 25 nm in a weight ratio of 1:0.015 (αN-βNPAnth: 3,10PCA2Nbf(IV)-02), forming the light-emitting layer 913. Next, the first electron transport layer 914_1 was formed by evaporating 2mPCCzPDBq to a thickness of 10 nm over the light-emitting layer 913. Then, the second electron transport layer 914_2 was formed by co-evaporating mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention, and Liq in a weight ratio of 1:1 (mmTMSPh-mDMePyPTzn: Liq) to a thickness of 20 nm. Next, as in the manufacturing process of the light-emitting device G-1 in Example 2, the electron injection layer 915 and the second electrode 902 were formed. <Herstellungsverfahren der Licht emittierenden Vergleichsvorrichtung B-2> Light-emitting device B-2 differs from light-emitting device B-1 in that mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention and is used in the second electron transport layer 914_2 of light-emitting device B-1, has been replaced by mmtBuPh-mDMePyPTzn, which is a comparable organic compound. Other components were prepared in a similar manner to those of light-emitting device B-1. <Herstellungsverfahren der Licht emittierenden Vorrichtung B-3> Light-emitting device B-3 differs from light-emitting device B-1 in that the first electron transport layer 914_1 was formed by evaporation of mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention, to a thickness of 10 nm, and that the second electron transport layer 914_2 was formed by co-evaporation of mPn-mDMePyPTzn and Liq in a weight ratio of 1:1 (mPn-mDMePyPTzn: Liq) to a thickness of 20 nm. Other components were prepared in a similar manner to those of light-emitting device B-1. <Herstellungsverfahren der Licht emittierenden Vergleichsvorrichtung B-4> Light-emitting reference device B-4 differs from light-emitting device B-3 in that mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention and is used for the first electron transport layer 914_1, has been replaced by mmtBuPh-mDMePyPTzn, which is an organic reference compound. Other components were prepared in a similar manner to those of light-emitting device B-3. <Herstellungsverfahren der Licht emittierenden Vergleichsvorrichtung B-5> Light-emitting comparison device B-5 differs from light-emitting device B-3 in that mmTMSPh-mDMePyPTzn, which is used in the first electron transport layer 914_1 and is the organic compound of an embodiment of the present invention, has been replaced by 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), which is an organic comparison compound. Other components were prepared in a similar manner to those of light-emitting device B-3. <Herstellungsverfahren der Licht emittierenden Vergleichsvorrichtung B-6> Light-emitting reference device B-6 differs from light-emitting device B-3 in that mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention and is used for the first electron transport layer 914_1, has been replaced by 2mPCCzPDBq, which is the organic reference compound. Other components were prepared in a similar manner to those of light-emitting device B-3. Table 9 lists the device structures of light-emitting devices G-1 and light-emitting comparison devices B-1 and B-2. Table 10 lists the device structures of light-emitting device B-3 and light-emitting comparison devices B-4 to B-6. [Table 9] [Table 9] second electrode 100 nmAl Electron injection layer 1 nm LiF Electron-220 nm)mmTMSPh-mDMePYPTzn:Liq (1:1)mmtBuPh-mDMePyPTzn:Liq (1:1) transport layer110 nm2mPCCzPDBq Light-emitting layer i25 nmαN-βNPAnth:3,10PCA2Nbf(IV)-02 (1:0,015) Hole transport-110 nmDBfBB1TP layer225 nm PCBBiF Hole injection layer10 nmPCBBiF:OCHD-003 (1:0.03) first electrode 55 nm MITSO [Table 10] [Table 10] second electrode 100 nmAl Electron injection layer 1 nm LiF Electron transport layer220 nmPn-mDMePyPTzn:Liq (1:1) 110 nmmmTMSPh-mDMePyPTznmmtBuPh-mDMePyPTzn6mBP-4Cz2PPm2mPCCzPDBq Light-emitting layer 25 nm αN-BNPAnth:3,10PCA2Nbf(NM)-02 (1 : 0,015) Hole transport layer110 nmDBfBB1TP 225 nm PCBBiF Hole injection layer10 nmPCBBiF:OCHD-003 (1:0.03) first electrode 55 nm MITSO <Eigenschaften der Licht emittierenden Vorrichtung> The light-emitting devices were sealed using a glass substrate in a glove box containing a nitrogen atmosphere to prevent exposure to atmospheric air (a sealing material was applied to completely enclose the devices, and during sealing, a UV treatment and a heat treatment at 80 °C for one hour were performed). The properties of the light-emitting devices were then measured. Fig. 38 shows luminance-current density characteristics of light-emitting device B-1 and light-emitting comparator B-2. Fig. 39 shows luminance-voltage characteristics of these. Fig. 40 shows current-efficiency-luminance characteristics of these. Fig. 41 shows luminance-voltage characteristics of these. Fig. 42 shows external quantum efficiency-luminance characteristics of these. Fig. 43 shows blue-index luminance characteristics of these. Fig. 44 shows electroluminescence spectra of these. Fig. 45 shows changes in luminance over the operating time when operating light-emitting device B-1 and light-emitting comparator B-2 at a constant current of 2 mA (50 mA / cm²). Fig. 46 shows luminance-current density characteristics of light-emitting device B-3 and light-emitting comparators B-4 to B-6. Fig. 47 shows the luminance-voltage characteristics of this. Fig.Figure 48 shows current efficiency-luminance properties of this. Figure 49 shows current density-voltage properties of this. Figure 50 shows external quantum efficiency-luminance properties of this. Figure 51 shows blue index-luminance properties of this. Figure 52 shows electroluminescence spectra of this. In the legends in Figs. 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51 to 52, the light-emitting device B-1, the light-emitting comparison device B-2, the light-emitting device B-3, the light-emitting comparison device B-4, the light-emitting comparison device B-5 and the light-emitting comparison device B-6 are represented by device B-1, comparison device B-2, device B-3, comparison device B-4, comparison device B-5 and comparison device B-6 respectively. It should be noted that the Blue Index (BI) is a value obtained by dividing the power efficiency (cd / A) by the y-value of the CIE chromaticity (x, y), and is one of the indicators of the properties of blue light emission. There is a tendency that as the y-chromaticity value of a blue light emission decreases, its color purity increases. A blue light emission with a low y-chromaticity value and high color purity allows for the display of blue with a wide chromaticity range on a screen and reduces the luminance of the blue light emission required for a display to represent white, resulting in lower power consumption. Therefore, in some cases, the BI, which is the power efficiency based on the y-chromaticity value as one of the indicators of blue color purity, is appropriately used as a means of representing the efficiency of a blue light emission.The light-emitting device with a higher BI can be considered a blue light-emitting device with higher efficiency for a display. Table 11 shows the main characteristics of the light-emitting devices at a luminance of approximately 100 cd / m². It should be noted that the luminance, CIE chromaticity, and emission spectra were measured using a spectroradiometer (SR-UL1R, manufactured by TOPCON TECHNOHOUSE CORPORATION). The external quantum efficiency was calculated from the luminance and emission spectra measured by the spectroradiometer, assuming that the devices exhibited Lambertian light distribution characteristics. [Table 11] Light-emitting device B-13,800,04501,120,1370,10711610,311,095,7 Light-emitting comparator B-23,800,03110,7780,1370,10974,99,6310,288,6 Light-emitting device B-33,400,02660,6660,1380,10377,611,712,8113 Light-emitting comparator B-43,600,06041,510,1370,10416510,912,0105 Light-emitting comparator B-53,200,04491,120,1380,10493,38,329,1280,1 Light-emitting comparator B-63,400,02640,6590,1370,10773,811,212,0105 From Fig. 38, Fig. 39, Fig. 40, Fig. 41, Fig. 42, Fig. 43, Fig. 44, Fig. 45, Fig. 46, Fig. 47, Fig. 48, Fig. 49, Fig. 50, Fig. 51 to Fig. 52 and Table 11, it was determined that the light-emitting device B-1 is a light-emitting device with advantageous properties that emits blue light originating from 3,10PCA2Nbf(IV)-02. As shown in Figs. 39 and 41, the operating voltage of light-emitting device B-1 was lower than that of light-emitting comparison device B-2 at low luminance or low current density. As shown in Figs. 40, 42, and 43, light-emitting device B-1 exhibits higher current efficiency, higher external quantum efficiency, and a higher blue index than light-emitting comparison device B-2. As shown in Fig. 48, Fig. 50 and Fig. 51, the light-emitting device B-3 has a higher current efficiency, a higher external quantum efficiency and a higher blue index than the comparable light-emitting devices B-4 to B-6 over a wide luminance range. Table 12 shows the ordinary refractive indices (no) and GSP slopes of the films of principal organic compounds formed by evaporation and used in the light-emitting devices. The ordinary refractive indices at a wavelength of 633 nm are shown as ordinary refractive indices in Table 12. A spectroscopic ellipsometer (M-2000U, manufactured by JA Woollam Japan) was used to measure the ordinary refractive indices, and the material for each layer was deposited by a vacuum evaporation process to a thickness of 50 nm over a quartz substrate to form films that were used as measurement samples. The GSP slopes of the films of organic compounds in Table 12 were measured by the method described for embodiment 1. [Table 12] 2mPCCzPDBq1,8812,4 6mBP-4Cz2PPm1.7621.5 mmtBuPh-mDMePyPTzn1,6244,3 mmTMSPh-mDMePyPTzn1,6035,0 As shown in Table 12, mmTMSPh-mDMePyPTzn, which is the organic compound of an embodiment of the present invention, is an organic compound that has a lower refractive index of the film than 6mBP-4Cz2PPm and 2mPCCzPDBq and a lower GSP slope of the film than mmtBuPh-mDMePyPTzn. The foregoing results reveal that the light-emitting device, in which the organic compound of an embodiment of the present invention is used, exhibits a low operating voltage and a high emission efficiency. This is because, in the light-emitting device, the organic compound of an embodiment of the present invention, in the electron transport layer, enables higher efficiency of light extraction from the light-emitting layer and effective application of a voltage to the light-emitting layer due to the low refractive index and the small GSP slope of the film of the organic compound of an embodiment of the present invention. [Example 4] <<Synthesebeispiel 2> > In this synthesis example, a method for synthesizing the organic compound of an embodiment of the present invention, 2-{3',5'-Bis(trimethylsilyl)-5-(pyrimidin-5-yl)biphenyl-3-yl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mmTMSPh-mPmPTzn) (structural formula (102)), and its physical properties are described. <Schritt 1: Synthese von 2-{5-Chlor-[3',5'-bis(trimethylsilyl)]biphenyl-3-yl}-4,6-diphenyl-1,3,5-triazin> 7.5 g (18 mmol) of 2-(3-bromo-5-chlorophenyl)-4,6-diphenyl-1,3,5-triazine, 6.8 g (20 mmol) of 2-[3,5-bis(trimethylsilyl)phenyl]-4,4,5,5-tetramethyl-1,3,2-dioxaborolane, 4.9 g (36 mmol) of potassium carbonate, 70 ml of toluene, 35 ml of ethanol (abbreviation: EtOH) and 18 ml of water were placed in a three-necked flask and the mixture was degassed. After degassing, 40 mg (0.18 mmol) of palladium(II) acetate (abbreviation: Pd(OAc)₂) and 0.22 g (0.71 mmol) of tris(2-methylphenyl)phosphine (abbreviation: P(o-tolyl)₃) were added, and the mixture was stirred at 80 °C for 11 hours. Upon completion of the reaction, toluene and water were added to the mixture, and the mixture was separated into an organic layer and an aqueous layer. An aqueous layer was extracted with toluene, the extracted solution and the organic layer were combined, and magnesium sulfate was added to adsorb moisture.This mixture was subjected to gravity filtration, and the resulting filtrate was concentrated to obtain a pale orange solid. This solid was purified by silica gel column chromatography using a mobile phase of toluene and ethyl acetate in a 1:10 ratio. Then, 10.4 g of a white solid containing a target compound were obtained. The synthesis scheme of step 1 is shown in (a-3). <Schritt 2: Synthese von mmTMSPh-mPmPTzn> Into a three-necked flask, 5.0 g (8.8 mmol) 2-{5-chloro-[3',5'bis(trimethylsilyl)]biphenyl-3-yl}-4,6-diphenyl-1,3,5-triazine obtained in step 1, 2.2 g (18 mmol) 5-pyrimidylboronic acid, 3.7 g (27 mmol) potassium carbonate, 50 ml tetrahydrofuran (abbreviation: THF) and 13 ml water were added, and the mixture was degassed. After degassing, 40 mg (0.18 mmol) of palladium(II) acetate (abbreviation: Pd(OAc)₂) and 0.17 g (0.35 mmol) of 2-dicyclohexylphosphino-2',4',6'-triisopropylbiphenyl (abbreviation: XPhos) were added, and the mixture was stirred at 65 °C for 18 hours. Upon completion of the reaction, toluene and water were added to the mixture, and the mixture was separated into an organic layer and an aqueous layer. An aqueous layer was extracted with toluene, the extracted solution and the organic layer were combined, and magnesium sulfate was added to adsorb moisture.This mixture was subjected to gravity filtration, and the filtrate obtained was concentrated to yield a yellow solid. This solid was purified by silica gel column chromatography using a mobile phase of toluene and ethyl acetate in a ratio of 10:1, which was then changed to 5:1, to obtain a pale yellow solid. This solid was recrystallized with toluene and ethanol to give 2.6 g of a white target solid in a yield of 49%. 2.6 g of the obtained solid were purified by train sublimation. In the sublimation purification, the solid was heated for 2 hours at 260 °C under a pressure of 3.3 Pa. After sublimation purification, 1.1 g of a white solid was obtained in a yield of 44%. The synthesis scheme of step 2 is shown below in (a-4). Analysis results by nuclear magnetic resonance (1H-NMR) spectroscopy of the white solid obtained in the preceding step 2 are shown below. Fig. 53 is a 1H-NMR diagram, and Fig. 54 is an enlarged diagram in the range of 7 ppm to 9.5 ppm in Fig. 53. These results revealed that the organic compound of an embodiment of the present invention, mmTMSPh-mPmPTzn, was obtained in this example. 1H NMR. δ (CDCl3, 500 MHz): 0.38 (s, 18H), 7.58-7.66 (m, 6H), 7.79 (t, 1H, J = 1.1 Hz), 7.88 (d, 2H, J = 1.1 Hz), 7.99 (t, 1H, J = 1.7 Hz), 8.79-8.82 (m, 4H), 8.97 (t, 1H, J = 1.6 Hz), 9.12 (t, 1H, J = 1.6 Hz), 9.19 (s, 2H), 9.32 (s, 1H). <Messung der Emissions- und Absorptionsspektren> Fig. 55 shows the measurement results of an absorption spectrum and an emission spectrum of a dichloromethane solution of mmTMSPh-mPmPTzn, as in<Messung der Emissions- und Absorptionsspektren> in Example 1. Furthermore, the absorption and emission spectra of the thin film are shown in Fig. 56. As shown in Fig. 55, the dichloromethane solution of mmTMSPh-mPmPTzn exhibits an absorption spectrum peak at a wavelength of 270 nm and an emission spectrum peak at a wavelength of 390 nm (excitation wavelength: 270 nm). As shown in Fig. 56, the thin film of mmTMSPh-mPmPTzn exhibits an absorption spectrum peak at a wavelength of 266 nm and an emission spectrum peak at a wavelength of 396 nm (excitation wavelength: 300 nm). It was determined from Figs. 55 and 56 that mmTMSPh-mPmPTzn exhibits no absorption in the visible range (at wavelengths longer than 450 nm). <Messung des Brechungsindex> Fig. 57 shows the measurement results of the refractive indices of the film from mmTMSPh-mPmPTzn, as in<Messung des Brechungsindex in dem Beispiel 1> As shown in Fig. 57, the mmTMSPh-mPmPTzn film has a decent refractive index in the range of 1.50 to 1.75 for the entire blue emission range (at wavelengths of 455 nm and 465 nm) and also a decent refractive index at a wavelength of 633 nm in the range of 1.45 to 1.70, which suggests that the film has a low refractive index. <Messung von GSP-Steigung und Pz> Next, the GSP slope of an evaporation-formed film of mmTMSPh-mPmPTzn was measured. The measurement was performed using the method described in embodiment 1. Furthermore, the degree of SOP (Pz) of the evaporation-formed film of mmTMSPh-mPmPTzn was calculated in the direction perpendicular to the substrate surface. It should be noted that Pz is a value obtained by multiplying the GSP slope and the relative permittivity of the film. The dielectric constant of the film can be a value obtained by multiplying the permittivity of free space and the square of the ordinary refractive index ν (the value at a wavelength of 633 nm). Table 13 shows the measurement results.Table 13 also shows, for comparison, the GSP slope and the Pz of a film formed by evaporation of 2-{3-(3,5-di-tert-butyl)phenyl-5-(pyrimidin-5-yl)phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mmtBuPh-mPmPTzn). The chemical formula of mmTMSPh-mPmPTzn, which is the organic compound of an embodiment of the present invention, and the chemical formula of mmtBuPh-mPmPTzn, which is the organic reference compound, are shown below. [Table 13] [Table 13] mmTMSPh-mDMePyPTzn64,31,44 mmtBuPh-mPmPTzn103,72,38 As shown in Table 13, mmTMSPh-mPmPTzn, which is the organic compound of an embodiment of the present invention, exhibits a smaller GSP slope and a smaller Pz in the form of a film than the film of mmtBuPh-mPmPTzn, which is the organic reference compound. In mmTMSPh-mPmPTzn, the trisubstituted silyl groups have a structure in which the quaternary carbon atoms of the two tert-butyl groups of mmtBuPh-mDMePyPTzn are each replaced by a silicon atom. It can be assumed that, since a silicon atom has a lower electronegativity than a carbon atom, mmTMSPh-mPmPTzn had a smaller permanent electric dipole moment than mmtBuPh-mDMePyPTzn, which led to the small Pz and the small GSP slope in the film formed by evaporation. [Example 5] This example describes the fabrication of a light-emitting device G-6, containing mmTMSPh-mPmPTzn, which is the organic compound of an embodiment of the present invention described in Example 4, and a light-emitting reference device G-7 and a light-emitting reference device G-8, each containing an organic reference compound, as well as the measurement results of the device. These light-emitting devices emit green phosphorescent light. Structural formulas of the organic compounds used for the light-emitting devices are shown below. <Herstellungsverfahren der Licht emittierenden Vorrichtung G-6> Light-emitting device G-6 differs from light-emitting device G-1 in that the first electron transport layer 914_1 was formed by evaporating mmTMSPh-mPmPTzn, which is the organic compound of an embodiment of the present invention, to a thickness of 20 nm, and that the second electron transport layer 914_2 was formed by evaporating mPPhen2P to a thickness of 20 nm. Other components were manufactured in a similar manner to those of light-emitting device G-1. <Herstellungsverfahren der Licht emittierenden Vergleichsvorrichtung G-7> The light-emitting reference device G-7 differs from the light-emitting device G-6 in that mmTMSPh-mPmPTzn, which is the organic compound of an embodiment of the present invention and is used for the first electron transport layer 914_1, is replaced by mmtBuPh-mPmPTzn, which is the organic reference compound. Other components were prepared in a similar manner to those of the light-emitting device G-6. <Herstellungsverfahren der Licht emittierenden Vergleichsvorrichtung G-8> The light-emitting reference device G-8 differs from the light-emitting device G-6 in that mmTMSPh-mPmPTzn, which is the organic compound of an embodiment of the present invention and is used for the first electron transport layer 914_1, is replaced by 2mPCCzPDBq, which is the organic reference compound. Other components were prepared in a similar manner to those of the light-emitting device G-6. The structures of the light-emitting device G-6 and the light-emitting comparison devices G-7 and G-8 are listed in Table 14. [Table 14] second electrode 100 nmAl Electron injection layer 1 nm LiF Electron transport layer 220 nmmPPhen2P 120 nmmmTMSPh-mPmPTznmmtBuPh-mPmPTzn2mPCCzPDBq Light-emitting layer 40 nm 8mpTP-4mDBtPBfpm:βNCCP: Ir(5mppy-d3)2(mbfpypy-d3) (0,5:0.5:0,1) Hole transport layer40 nmPCBBiF Hole injection layer10 nmPCBBiF:OCHD-003 (1:0.03) first electrode 70 nm MITSO <Eigenschaften der Licht emittierenden Vorrichtung> The light-emitting devices were sealed using a glass substrate in a glove box containing a nitrogen atmosphere to prevent exposure to atmospheric air (a sealing material was applied to completely enclose the devices, and during sealing, a UV treatment and a heat treatment at 80 °C for one hour were performed). The properties of the light-emitting devices were then measured. Fig. 58 shows luminance-current density characteristics of the light-emitting device G-6 and the light-emitting comparator devices G-7 and G-8. Fig. 59 shows luminance-voltage characteristics of these. Fig. 60 shows current-efficiency-luminance characteristics of these. Fig. 61 shows current-density-voltage characteristics of these. Fig. 62 shows external quantum efficiency-luminance characteristics of these. Fig. 63 shows electroluminescence spectra of these. Fig. 64 shows changes in luminance over the operating time when operating the light-emitting device G-6 and the light-emitting comparator devices G-7 and G-8 at a constant current of 2 mA (50 mA / cm²). In the legends in Figs. 58, 59, 60, 61, 62, 63 to 64, the light-emitting device G-6, the light-emitting comparison device G-7 and the light-emitting comparison device G-8 are referred to as device G-6, comparison device G-7 and G-8, respectively.Comparison device G-8 is shown. Table 15 shows the main characteristics of the light-emitting devices at a luminance of approximately 1000 cd / m². It should be noted that the luminance, CIE chromaticity, and emission spectra were measured using a spectroradiometer (SR-UL1R, manufactured by TOPCON TECHNOHOUSE CORPORATION). The external quantum efficiency was calculated from the luminance and emission spectra measured by the spectroradiometer, assuming that the devices exhibited Lambertian light distribution characteristics. [Table 15] Light-emitting device G-62,800,03860,9660,3630,614103610727,9 Light-emitting comparator G-73,200,03520,8790,3510,62394410727,7 Light-emitting comparator G-82,800,03850,9630,3570,619102310627,4 From Fig. 58, Fig. 59, Fig. 60, Fig. 61, Fig. 62, Fig. 63 to Fig. 64 and Table 15, it was determined that the light-emitting device G-6 is a light-emitting device with advantageous properties that emits green light originating from Ir(5mppy-d3)2(mbfpypy-d3). Figures 59, 60 to 61 show that the light-emitting device G-6 has a lower operating voltage than the light-emitting comparison device G-7. Figures 60 and 62 show that the light-emitting device G-6 has a higher emission efficiency than the light-emitting comparison device G-8. Figure 64 shows that the change in luminance of the light-emitting device G-6 over its operating time is smaller than that of the light-emitting comparison device G-7 and equivalent to that of the light-emitting comparison device G-8; therefore, the light-emitting device G-6 has a long service life. Table 16 shows the ordinary refractive indices (no), Pz, and GSP slopes of the evaporation-formed films of organic compounds used in the first electron transport layers 914_1 of the light-emitting devices, and of a film formed by co-evaporation of the same combination of organic compounds in the same mixing ratio as those in the light-emitting layer 913 of each light-emitting device. The ordinary refractive index at a wavelength of 532 nm is shown as the ordinary refractive index in Table 16. A spectroscopic ellipsometer (M-2000U, manufactured by J.A. Woollam, Japan) was used to measure the ordinary refractive indices, and the material for each layer was deposited by a vacuum evaporation process to a thickness of 50 nm over a quartz substrate to form films that were used as measurement samples.The Pz and GSP slope of the films of the organic compounds in Table 16 were measured using the method described for embodiment 1.[Table 16] [Table 16]. mmTMSPh-mDMePyPTzn1,611,4464,3 mmtBuPh-mPmPTzn1,632,38103,7 2mPCCzPDBq1,920,3812,4 8mpTP-4mDBtPBfpm:βNCCP: Ir(5mppy-d3)2(mbfpypyd3) (0.5:0.5:0.1)-1.6751.5 As shown in Table 16, the film of mmTMSPh-mPmPTzn, which is the organic compound of an embodiment of the present invention, has a lower refractive index than the films of mmtBuPh-mPmPTzn and 2mPCCzPDBq, which are the organic reference compounds, and exhibits a lower Pz and a lower GSP slope than the film of mmtBuPh-mPmPTzn. As shown in Table 16, the film of mmTMSPh-mPmPTzn, which is the organic compound of an embodiment of the present invention, also has a lower Pz than the film formed by co-evaporation of the same combination of organic compounds with the same mixing ratio as those in the light-emitting layer 913.Meanwhile, the film of mmtBuPh-mPmPTzn, which is an organic reference compound, exhibits a larger Pz than the film formed by co-evaporation of the same combination of organic compounds with the same mixing ratio as those in the light-emitting layer 913. As described above, the light-emitting device G-6 exhibits a higher emission efficiency than the light-emitting comparison device G-8. This result can be explained by the fact that, as shown in Table 16, the mmTMSPh-mPmPTzn film used in the first electron transport layer 914_1 of the light-emitting device G-6 has a lower refractive index than the 2mPCCzPDBq film used in the first electron transport layer 914_1 of the light-emitting comparison device G-8. In other words, the light-emitting device G-6 achieved a higher light extraction efficiency by using mmTMSPh-mPmPTzn, which has a low refractive index in the form of a film, in the first electron transport layer 914_1, resulting in increased light emission efficiency. As described above, the light-emitting device G-6 has a lower operating voltage and a longer lifetime than the light-emitting comparison device G-7. This result can be explained by the fact that, as shown in Table 16, the mmTMSPh-mPmPTzn film used as the first electron transport layer 914_1 of the light-emitting device G-6 has a smaller Pz than the film formed by co-evaporation of the same combination of organic compounds with the same mixing ratio as those in the light-emitting layer 913, while the mmtBuPh-mPmPTzn film used in the light-emitting comparison device G-7 has a larger Pz than the film formed by co-evaporation of the same combination of organic compounds with the same mixing ratio as those in the light-emitting layer 913.In other words, the light-emitting device G-6 enabled the creation of a virtual positive interfacial charge at the interface between the light-emitting layer 913 and the first electron transport layer 914_1 by using mmTMSPh-mPmPTzn, which has a smaller Pz in the form of a film than the light-emitting layer 913. This resulted in improved electron injection properties from the first electron transport layer 914_1 into the light-emitting layer 913. Furthermore, the light-emitting device exhibited a favorable charge carrier balance and a longer lifetime. This application is based on the Japanese patent application with serial number 2024-230213, filed with the Japanese Patent Office on December 26, 2024, the entire contents of which are hereby made the subject of this disclosure. QUOTES INCLUDED IN THE DESCRIPTION This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature JP 2024-230213

[0486] Cited non-patent literature Jaeho Lee et al., „Synergetic electrode architecture for efficient graphene-based flexible organic light-emitting diodes", Nature COMMUNICATIONS, 2. Juni, 2016, DOI: 10.1038 / ncomms 11791

[0011] Masaki Tanaka et al., „Spontaneous formation of metastable orientation with well-organized permanent dipole moment in organic glassy films", Nature Materials, 2022, Vol. 21, S. 819-825

[0011] Yutaka Noguchi et al., „Charge accumulation at organic semiconductor interfaces due to a permanent dipole moment and its orientational order in bilayer devices", Journal of Applied Physics, 2012, 111, 114508

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Claims

Organic compound represented by the general formula (G1): where: Q 1 to Q 3 Each represent N or CH independently of each other; at least two of Q 1 to Q 3 represent N; R 1 to R 3 Each independently represents an alkyl group with 1 to 6 carbon atoms or a phenyl group; n is an integer greater than or equal to 2 and less than or equal to 5; R 10 hydrogen, an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; R 11 to R 24 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms; at least one of R 11 to R 24 represents a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms; a multitude of R 1 is the same or different from each other; a multitude of R 2 is the same or different from each other; a multitude of R 3 is the same or different from each other; and if 5-n is greater than or equal to 2, a plurality of R 10 is the same or different from each other. Organic compound according to claim 1, wherein the organic compound is represented by the general formula (G2): , and where: R 12 to R 24 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms; and Hy represents a substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms. Organic compound according to claim 1, wherein the substituted or unsubstituted heteroaryl group comprising 3 to 30 carbon atoms includes nitrogen. Organic compound according to claim 1, wherein one or more of the atoms contained in an aromatic ring of the substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms are nitrogen atoms. Organic compound according to claim 1, wherein the substituted or unsubstituted heteroaryl group with 3 to 30 carbon atoms is a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted pyrimidinyl group or a substituted or unsubstituted pyrazinyl group. Organic compound according to claim 5, wherein the substituted or unsubstituted heteroaryl group comprising 3 to 30 carbon atoms includes at least one alkyl group comprising 1 to 6 carbon atoms and one cycloalkyl group comprising 3 to 10 carbon atoms. Organic compound according to claim 1, wherein n is 2 or 3. Organic compound according to claim 1, wherein Q1 to Q3 each represent N. Light-emitting device comprising the organic compound according to claim 1. Light-emitting device comprising: a first electrode; a second electrode; and an EL layer positioned between the first electrode and the second electrode, wherein the EL layer comprises a light-emitting layer and an electron transport layer, wherein the electron transport layer is positioned between the light-emitting layer and the second electrode, wherein the distance between the electron transport layer and the second electrode is less than or equal to 5 nm, and wherein the electron transport layer comprises the organic compound according to claim 1. Organic compound represented by the general formula (G3): where: Q 1 to Q 3 Each represent N or CH independently of each other; at least two of Q 1 to Q 3 represent N; R 1 to R 3 Each independently represents an alkyl group with 1 to 6 carbon atoms or a phenyl group; n is an integer greater than or equal to 2 and less than or equal to 5; R 10 hydrogen, an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; R 12 to R 24 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms; R 25 to R 28 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms; a multitude of R 1 is the same or different from each other; a multitude of R 2 is the same or different from each other; a multitude of R 3 is the same or different from each other; and if 5-n is greater than or equal to 2, a plurality of R 10 is the same or different from each other. Organic compound according to claim 11, wherein the organic compound is represented by the general formula (G4): Organic compound according to claim 11, wherein n is 2 or 3. Organic compound according to claim 11, wherein the organic compound is represented by the general formula (G5): where: R 4 to R 6 each independently represent an alkyl group with 1 to 6 carbon atoms or a phenyl group; and R 8 and R 8 Each can independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, or a cycloalkyl group with 3 to 10 carbon atoms. Organic compound according to claim 11, wherein at least one of R25 to R28 is an alkyl group with 1 to 6 carbon atoms or a cycloalkyl group with 3 to 10 carbon atoms. Organic compound according to claim 11, wherein Q1 to Q3 each represent N. Organic compound according to claim 11, wherein the organic compound is represented by the structural formula (100): Light-emitting device comprising the organic compound according to claim 11. Light-emitting device comprising: a first electrode; a second electrode; and an EL layer positioned between the first electrode and the second electrode, wherein the EL layer comprises a light-emitting layer and an electron transport layer, wherein the electron transport layer is positioned between the light-emitting layer and the second electrode, wherein the distance between the electron transport layer and the second electrode is less than or equal to 5 nm, and wherein the electron transport layer comprises the organic compound according to claim 11.

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