Compound semiconductor substrate

Abstract

A compound semiconductor substrate (1) comprising a natural oxide film and having a mirror-polished surface; wherein the mirror-polished surface is covered with a surfactant layer of an organic substance (20) containing hydrogen (H), carbon (C) and oxygen (O); wherein the film thickness of the surfactant layer, comprising the surfactant layer and the natural oxide film underlying the surfactant layer, is 1.5 nm or greater and 3.0 nm or less, as measured by an ellipsometer.

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