Compound semiconductor substrate

DE112012007376B4Pending Publication Date: 2026-07-02SUMITOMO ELECTRIC INDUSTRIES LTD
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Patent Information

Application Number
DE112012007376
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Priority Date
2011-05-18
Filing Date
2012-05-09
Publication Date
2026-07-02
Estimated Expiration
2032-05-09

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Abstract

A compound semiconductor substrate (1) comprising a natural oxide film and having a mirror-polished surface; wherein the mirror-polished surface is covered with a surfactant layer of an organic substance (20) containing hydrogen (H), carbon (C) and oxygen (O); wherein the film thickness of the surfactant layer, comprising the surfactant layer and the natural oxide film underlying the surfactant layer, is 1.5 nm or greater and 3.0 nm or less, as measured by an ellipsometer.
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Citation Information

Patent Citations

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  • Semiconductor wafer with protection film

    JP1995201689A

  • JP000H07201689A

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