Semiconductor module

Abstract

Semiconductor module (100, 100A, 100B, 200, 200A, 200B), comprising: - at least one semiconductor chip (2); - a housing (5) in which the semiconductor chip (2) is housed; and - at least one pressurizing component (10, 10A, 10B, 20, 20A, 20B) that is placed between an upper electrode (2a) of the semiconductor chip (2) and a top electrode (3) provided in the housing (5), wherein the pressurizing component (10, 10A, 10B, 20, 20A, 20B) is configured to electrically connect the upper electrode (2a) and the top electrode (3), wherein: - the component under pressure (10, 10A, 10B, 20, 20A, 20B) is elastic, - the pressurizing component (10, 10A, 10B, 20, 20A, 20B) has: - a conductive block (12, 22); and - a plate spring component (11, 21) having an opening and containing current paths (11a, 11b, 21a, 21b) that are opposite each other, wherein at least a part of the conductive block (12, 22) is located between the current paths (11a, 11b, 21a, 21b), - the conductive block (12, 22) is in contact with an inner wall of the plate spring component (11, 21) which defines the opening, - the plate spring component (21) has a U-shape, - a bottom section of the U-shaped plate spring component (21) is in contact with the upper electrode (3) of the housing (5), - the conductive block (22) is in contact with the U-shaped diaphragm spring component (21) while being sandwiched between sections of the U-shaped diaphragm spring component (21), - a surface of the conductive block (22), wherein the surface is located near the semiconductor chip (2), is in contact with the upper electrode (2a) of the semiconductor chip (2), - a width of the conductive block (22) along a direction in which the conductive block is sandwiched between the sections of the U-shaped plate spring component (21) is greater than a height of the conductive block (22).

Description

Technical area

[0001] The present invention relates to a semiconductor module. State of the art

[0002] A semiconductor module is known in which a plurality of semiconductor chips are placed in a package, and pressures are uniformly applied to the semiconductor chips by means of elasticity or spring force, while each of the semiconductor chips is electrically connected to an electrode (see, for example, Patent Document 1). If such a semiconductor module is used for power control or the like as described, each of the semiconductor chips should control the ON / OFF of a large current. To increase current carrying capacity, a plurality of current paths are provided for a single semiconductor chip. State-of-the-art documentsPatent documents

[0003] Patent Document 1: Japanese Patent Application JP 2004- 528 724 A

[0004] US 2013 / 0 043 578 A1 shows a power semiconductor device with a first press pin that contains a foot, wherein a base of the foot is provided for bringing a contact element of the power semiconductor device into contact, for example, within a power semiconductor module that contains a base plate and at least one power semiconductor device arranged on the base plate, contacted via at least one further press pin. An insulating means is provided for an electrical outer surface of the foot. A power semiconductor module has a base plate, at least one power semiconductor device arranged on the base plate, and at least one of the aforementioned first press pins that is formed with the aforementioned insulating means. SummaryProblem to be solved by the invention

[0005] When a semiconductor chip is short-circuited due to a malfunction or the like, currents greater than those flowing under normal operating conditions flow in the same direction through a plurality of current paths. An electromagnetic force is then generated between the current paths, which may damage a part forming the current paths, causing an open circuit in the current paths. Due to an open circuit in the current paths, an arc discharge may occur in a package of a semiconductor module.

[0006] Therefore, there is a need to design a semiconductor module package with arc resistance in mind, assuming that arc discharge occurs. This increases the size and weight of the package, causing problems of increased size and weight of the semiconductor module and increased manufacturing costs.

[0007] The present invention has been made to solve the problems described above, and it is an object of the present invention to provide a semiconductor module that suppresses a break in a current path and an occurrence of an arc discharge when a semiconductor chip is short-circuited. Means to solve the problem

[0008] The object underlying the invention is achieved in a semiconductor module according to the invention with the features of claim 1 and alternatively with the features of claim 2. Advantageous further developments are the subject of the respective dependent claims.

[0009] A semiconductor module according to the present invention comprises: at least one semiconductor chip; a package in which the semiconductor chip is housed; and at least one pressurizing member placed between an upper electrode of the semiconductor chip and a top-side electrode provided in the package and configured to electrically connect the upper electrode and the top-side electrode, wherein the pressurizing member is elastic, and the pressurizing member comprises: a conductive block; and a plate spring member including current paths opposed to each other, wherein at least a part of the conductive block is located between the current paths. The conductive block is in contact with an inner wall of the plate spring member defining the opening. The plate spring member has a U-shape.A bottom portion of the U-shaped plate spring component is in contact with the top electrode of the package. The conductive block is in contact with the U-shaped plate spring component while being sandwiched between portions of the U-shaped plate spring component. A surface of the conductive block, which is located near the semiconductor chip, is in contact with the top electrode of the semiconductor chip.

[0010] According to a first aspect of the present invention, a width of the conductive block along a direction along which the conductive block is sandwiched between the portions of the U-shaped plate spring member is larger than a height of the conductive block.

[0011] In addition, according to a second aspect of the present invention, a width of a surface of the conductive block in contact with the U-shaped plate spring member is larger than a width of a portion of the plate spring member in contact with the conductive block. Effects of the invention

[0012] In the semiconductor module according to the present invention, the conductive block is placed between the opposing current paths of the diaphragm member, so that when a short-circuit current flows through the current paths, a current flowing in a direction opposite to a short-circuit current is generated in the conductive block. Accordingly, an attractive force generated between the opposing current paths is relaxed. Therefore, separation of the current paths due to damage to the diaphragm member is suppressed, so that occurrence of arc discharge in the case of the semiconductor module is suppressed. Consequently, a strength required of the case of the semiconductor module is reduced, so that an increase in the size and weight of the semiconductor module and an increase in manufacturing costs can be suppressed.

[0013] The object, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention and its technical background when taken in conjunction with the accompanying drawings. Short description of the drawings Fig. 1 is a side view of an interior of a package of a semiconductor module according to a first embodiment for explaining the technical background of the present invention. Fig. 2 is a schematic diagram showing a manner in which currents flow through a pressurizing member of the semiconductor module according to the first embodiment for explaining the background art. Fig. 3 is a side view of an interior of a package of a semiconductor module according to a first modification of the first embodiment for explaining the technical background of the present invention. Fig. 4 is a perspective view of an interior of a package of a semiconductor module according to a second modification of the first embodiment for explaining the technical background of the present invention. Fig. 5 is a side view of an interior of a package of a semiconductor module according to a second embodiment for explaining the technical background of the present invention. Fig. 6 is a schematic diagram showing a manner in which currents flow through a pressurizing member of the semiconductor module according to the second embodiment. Fig. 7 is a side view of an interior of a package of a semiconductor module according to a first modification of the second embodiment of the present invention. Fig. 8 is a perspective view of an interior of a case of a semiconductor module according to a second modification of the second embodiment. Fig. 9 is a side view of an interior of a package of a semiconductor module according to a third embodiment for explaining the technical background of the present invention. Fig. 10 is a side view of an interior of a package of a semiconductor module according to a basic technique. Description of embodiments <basistechnik>

[0014] Before describing embodiments of the present invention and their technical background, a technique on which the present invention is based will be described. Fig. 10 is a side view of an interior of a package of a semiconductor module according to a basic technique. As in Fig. As shown in Figure 10, the semiconductor module according to the basic technique comprises a semiconductor chip 2, a package 6, and a pressurizing component 1. The semiconductor chip 2 and the pressurizing component 1 are housed in the package 6.

[0015] It is particularly noted that the semiconductor chip 2 is a power semiconductor chip such as, for example, an insulated gate bipolar transistor (IGBT). The semiconductor chip 2 includes an upper electrode 2a serving as a main electrode and located in an upper surface of the semiconductor chip 2, and a lower electrode 2b serving as a main electrode and located in a lower surface of the semiconductor chip 2. If the semiconductor chip 2 is a switching element, the semiconductor chip 2 further includes a control electrode not shown in the drawings. The semiconductor chip 2 is mounted on a substrate 4 in which a circuit pattern 41 is formed in a surface of an insulating substrate 42. The lower electrode 2a of the semiconductor chip 2 is connected to the circuit pattern 41.

[0016] The housing 6 is a shell in which the semiconductor chip 2, the pressurizing component 1, and the substrate 4 are housed. A top electrode 3 is provided on an upper side of the housing 6.

[0017] As in Fig. As shown in Figure 10, the pressurizing component 1 is placed between the upper electrode 2a of the semiconductor chip 2 and the top-side electrode 3 of the package 6. The pressurizing component 1 electrically connects the upper electrode 2a and the top-side electrode 3.

[0018] The pressurizing component 1 contains a diaphragm spring component 11. As shown in Fig. As shown in Figure 10, the diaphragm component 11 comprises two current paths 11a and 11b, which are opposite one another. By including the two current paths 11a and 11b, the current carrying capacity of the diaphragm component 11 can be increased.

[0019] In the semiconductor module according to the basic technology having the above-described configuration, if the semiconductor chip 2 is short-circuited due to a malfunction or the like of the semiconductor chip 2, the plate spring member 11 may be separated. Separation of the plate spring member 11 may cause an arc discharge to occur in a separation-occurring portion, thus further damaging the semiconductor module.

[0020] Separation of the plate spring component 11 occurs in the following manner. While the semiconductor chip 2 is short-circuited, short-circuit currents flow through the two opposite current paths 11a and 11b in the same direction. Although currents flow through the two current paths 11a and 11b in the same direction even under normal operating conditions of the semiconductor chip 2, the amount of current flowing under normal operating conditions is relatively small, and no problem is caused. The amount of short-circuit currents is far greater than the amount of currents under normal operating conditions, so that an electromagnetic force (a force indicated by arrows A1 in Fig. 10) is generated between the opposing current paths 11a and 11b. Due to the attractive force, the plate spring component 11 is damaged, and the current paths 11a and 11b are interrupted, causing an arc discharge.

[0021] In the basic technology, it is necessary to design the housing 6 of the semiconductor module with arc resistance in mind, assuming that an arc discharge occurs. Therefore, the size and weight of the housing 6 are increased, causing problems of increased size and weight of the semiconductor module and increased manufacturing costs. It is also necessary to limit the tolerable current of the semiconductor module and add, for example, a short-circuit protection circuit. Each of the embodiments described below is intended to solve the foregoing problems. <Erste Ausführungsform zur Erläuterung des technischen Hintergrunds der vorliegenden Erfindung > <konfiguration>

[0022] Fig. 1 is a side view of an interior of a housing of a semiconductor module 100 according to a first embodiment for explaining the technical background of the present invention. As shown in Fig. 1, the semiconductor module 100 according to the first embodiment includes a semiconductor chip 2, a package 5, and a pressurizing component 10. The semiconductor chip 2 and the pressurizing component 10 are housed in the package 5.

[0023] It is specifically noted that the semiconductor chip 2 is, for example, an IGBT. The semiconductor chip 2 includes an upper electrode 2a and a lower electrode 2b, which serve as a main electrode and are located in an upper surface and a lower surface of the semiconductor chip 2, respectively. If the semiconductor chip 2 is a switching element, the semiconductor chip 2 further includes a control electrode not shown in the drawings. The semiconductor chip 2 is mounted on a substrate 4 in which a circuit pattern 41 is formed in a surface of an insulating substrate 42. The lower electrode 2a of the semiconductor chip 2 is connected to the circuit pattern 41.

[0024] The housing 5 is a shell in which the semiconductor chip 2, the pressurizing component 10, and the substrate 4 are housed. A top electrode 3 is provided on an upper side of the housing 5.

[0025] The pressurizing member 10 is elastic in a direction (-z direction) in which the upper electrode 2a of the semiconductor chip 2 is pressed. In other words, the pressurizing member 10 expands and contracts in the ±z direction. In the first embodiment for explaining the technical background, the elasticity of the pressurizing member 10 is realized by the elasticity of a plate spring member 11 having an annular shape.

[0026] As in Fig. As shown in Figure 1, the pressurizing component 10 is placed between the upper electrode 2a of the semiconductor chip 2 and the top-side electrode 3 of the package 5. The pressurizing component 10 electrically connects the upper electrode 2a and the top-side electrode 3.

[0027] The pressurizing component 10 comprises a conductive block 12 and the diaphragm component 11. As shown in Fig. 1, the plate spring member 11 has an annular shape. The annular plate spring member 11 is formed, for example, into a hexagonal shape. It is noted that a term "annular" does not necessarily mean that the plate spring member 11 forms a continuous ring. The plate spring member 11 may, for example, be provided intermittently in a surface where the plate spring member 11 is in contact with the top-side electrode 3 of the housing 5.

[0028] An upper portion of the annular plate spring component 11 is in contact with the top electrode 3 of the package 5. A lower portion of the annular plate spring component 11 is in contact with the top electrode 2a of the semiconductor chip 2. The annular plate spring component 11 includes two current paths 11a and 11b that are opposite to each other.

[0029] The conductive block 12 is a metal block, for example, a copper block. The conductive block 12 is placed between the two current paths 11a and 11b, which are opposite each other. The conductive block 12 is in contact with an inner wall of the plate spring member 11. In the first embodiment for explaining the technical background, the conductive block 12 is in contact with an inner wall of the annular plate spring member 11, the inner wall being located near the semiconductor chip 2. <betrieb>

[0030] Fig. 2 is a schematic diagram showing a manner in which currents flow through the pressurizing member 10 of the semiconductor module 100 in the first embodiment for explaining the technical background of the present invention.

[0031] As indicated by arrows C1 in Fig. As indicated in Figure 2, when the semiconductor chip 2 is short-circuited due to a malfunction or the like of the semiconductor chip 2, short-circuit currents flow through the opposing current paths 11a and 11b of the plate spring component 11 in the -z direction. Thus, eddy currents are generated in a surface of the conductive block 12 due to a proximity effect. As indicated by arrows C2 in Figure 2, Fig. 2, currents flowing in a direction opposite to a short-circuit current (i.e., the z direction) are generated in each of surfaces of the conductive block 12, the surfaces facing the current paths 11a and 11b, respectively (i.e., surfaces located in a y direction and a -y direction). Currents indicated by arrows C2 are then reversed through a surface of the conductive block 12, the surface located in the z direction, and flow in the -z direction, as indicated by arrows C3. Currents indicated by arrows C3 flow through surfaces of the conductive block 12, the surfaces not facing the current paths 11a and 11b (i.e., surfaces located in an x ​​direction and a -x direction).

[0032] In this way, since a current flows through the conductive block 12 in a direction opposite to a direction of a short-circuit current flowing through each of the current paths 11a and 11b of the diaphragm member 11, an attractive force generated between the two opposing current paths 11a and 11b in the diaphragm member 11 is relaxed. Accordingly, it is possible to suppress disconnection due to damage to the diaphragm member 11.

[0033] Although a single semiconductor chip 2 and a single pressurizing component 10 in Fig. 1, a plurality of semiconductor chips 2 and a plurality of pressurizing components 10 may be housed in a package 5. A configuration in which a plurality of semiconductor chips 2 and a plurality of pressurizing components 10 are housed in a single package 5 will be described in a third embodiment for explaining the technical background of the present invention. <effekt>

[0034] The semiconductor module 100 according to the first embodiment for explaining the technical background of the present invention includes at least one semiconductor chip 2, the package 5 in which the semiconductor chip 2 is housed, and at least one pressurizing member 10 placed between the upper electrode 2a of the semiconductor chip 2 and the top-side electrode 3 provided in the package 5 and configured to electrically connect the upper electrode 2a and the top-side electrode 3, wherein the pressurizing member 10 is elastic, and the pressurizing member 10 includes the conductive block 12 and the plate spring member 11 including the current paths 11a and 11b that oppose each other, wherein at least a part of the conductive block 12 is located between the current paths 11a and 11b.

[0035] In the semiconductor module 100 according to the first embodiment of the present invention, the conductive block 12 is placed between the opposing current paths 11a and 11b of the plate spring member 11. Thus, when a short-circuit current flows through the current paths 11a and 11b, an eddy current flowing in a direction opposite to the short-circuit current is generated in the conductive block 12. As a result, an attractive force generated between the opposing current paths 11a and 11b is relieved. Accordingly, it is possible to suppress disconnection due to damage to the plate spring member 11.

[0036] As described above, in the semiconductor module 100, damage to the plate spring member 11 can be suppressed, and thus arc discharge due to a break in the current paths 11a and 11b can be prevented. Accordingly, the strength required of the casing 5 of the semiconductor module 100 is reduced, so that an increase in the size and weight of the semiconductor module 100 can be suppressed. Also, the strength required of the casing 5 of the semiconductor module 100 is reduced, so that manufacturing costs can also be reduced.

[0037] Furthermore, in the semiconductor module 100 according to the first embodiment for explaining the technical background of the present invention, the plate spring member 11 has an annular shape, the upper portion of the annular plate spring member 11 is in contact with the top electrode 3 of the package 5, the lower portion of the annular plate spring member 11 is in contact with the top electrode 2a of the semiconductor chip 2, and the conductive block 12 is placed to be in contact with an inner wall of the annular plate spring member 11.

[0038] By placing the conductive block 12 so that the conductive block 12 is in contact with an inner wall of the annular diaphragm member 11 as described above, it is possible to suppress disconnection due to damage to the diaphragm member 11 when a short-circuit current flows through the diaphragm member 11. <Erste Modifikation der ersten Ausführungsform zur Erläuterung des technischen Hintergrunds >

[0039] Fig. 3 is a side view of the interior of a housing of a semiconductor module 100A according to a first modification of the first embodiment for explaining the technical background of the present invention. In the first modification, a pressurizing member 10A includes a spring 13. The spring 13 is, for example, a coil spring.

[0040] As in Fig. As shown in Figure 3, in the first modification, the conductive block 12 and the spring 13 are placed in series between an inner wall of the plate spring member 11, the inner wall being located near the semiconductor chip 2, and an inner wall of the plate spring member 11, the inner wall being located near the top-side electrode 3 of the package 5. In other words, the conductive block 12 and the spring 13 are placed so as to be stacked along the z-direction.

[0041] Although the conductive block 12 is placed near the semiconductor chip 2 and the spring 13 is placed near the top electrode 3 of the housing 5 in Fig. 3, the respective positions of the conductive block 12 and the spring 13 can be swapped.

[0042] In the first modification, by placing the spring 13 in series with the conductive block 12, it is possible to adjust an elasticity of the pressurizing member 10A according to a characteristic of the spring 13. Even in a case where the spring 13 is conductive, the spring 13 functions as an inductor and, in particular, provides high impedance at high frequencies, so that no current flows. <effekt>

[0043] In the semiconductor module 100A according to the first modification of the first embodiment for explaining the technical background of the present invention, the pressurizing member 10A further includes the spring 13, and the conductive block 12 and the spring 13 are placed in series with each other between an inner wall of the annular plate spring member 11, the inner wall being located near the semiconductor chip 2, and an inner wall of the plate spring member 11, the inner wall being located near the top-side electrode 3 of the case 5.

[0044] Thus, due to a configuration in which the pressurizing member 10A includes the spring 13, an elasticity of the pressurizing member 10A can be adjusted according to a characteristic of the spring 13. <Zweite Modifikation der ersten Ausführungsform zur Erläuterung des technischen Hintergrunds >

[0045] Fig. 4 is a side view of an interior of a housing of a semiconductor module 100B according to a second modification of the first embodiment for explaining the technical background of the present invention. As shown in Fig. As shown in Fig. 4, in the second modification, the conductive block 12 included in a pressurizing member 10B includes projections 12a and 12b. The projections 12a and 12b of the conductive block 12 protrude from an annular opening of the plate spring member 11 in the ±x directions, respectively.

[0046] As in Fig. 4, eddy currents flowing through the conductive block 12 include a portion flowing in the same direction as a short-circuit current (arrow C1), as indicated by arrows C3. In this regard, currents indicated by arrows C3 flow through surfaces of the conductive block 12, the surfaces not facing the current paths 11a and 11b (that is, surfaces located in the x-direction and the -x-direction). Then, in the second modification, surfaces of the conductive block 12, the surfaces located in the x-direction and the -x-direction, are formed to protrude from the annular opening of the plate spring member 11.As a result, eddy currents (currents indicated by arrows C3) generated in the conductive block 12 and flowing in the same direction as a short-circuit current can be kept away from a short-circuit current (a current indicated by arrow C1) flowing through the diaphragm member 11. <effekt>

[0047] In the semiconductor module 100B according to the second modification of the first embodiment for explaining the technical background of the present invention, the conductive block 12 includes the projections 12a and 12b projecting from the annular opening of the plate spring member 11.

[0048] As a result, a current flowing in the same direction as a short-circuit current flowing through the diaphragm member 11 flows through the protrusions 12a and 12b from eddy currents generated in the conductive block 12. Accordingly, a current flowing in the same direction as a short-circuit current flowing through the diaphragm member 11 can be prevented from flowing through the diaphragm member 11. Consequently, an attractive force generated between the two opposing current paths 11a and 11b of the diaphragm member 11 is further relaxed, so that disconnection due to damage to the diaphragm member 11 can be suppressed. <Zweite Ausführungsform> <konfiguration>

[0049] Fig. 5 is a side view of an interior of a housing of a semiconductor module 200 according to a second embodiment for explaining the technical background of the present invention. The semiconductor module 200 according to the second embodiment is different from that in the first embodiment for explaining the technical background of the present invention ( Fig. 1) in a configuration of a pressurizing component 20. Configurations of the other components are identical to those in the first embodiment for explaining the technical background, and thus their description is omitted.

[0050] The pressurizing member 20 is elastic in a direction (-z direction) in which an upper electrode 2a of a semiconductor chip 2 is pressed. In the second embodiment, the elasticity of the pressurizing member 20 is realized by the elasticity or spring force of a spring 23.

[0051] As in Fig. As shown in Figure 5, the pressurizing component 20 is placed between the upper electrode 2a of the semiconductor chip 2 and a top-side electrode 3 of a package 5. The pressurizing component 20 electrically connects the upper electrode 2a and the top-side electrode 3.

[0052] The pressurizing component 20 comprises a conductive block 22 and a diaphragm member 21. As shown in Fig. As shown in Figure 5, the diaphragm member 21 has a U-shape. A bottom portion of the U-shaped diaphragm member 21 is in contact with or connected to the top electrode 3 of the housing 5. The U-shaped diaphragm member 21 includes two current paths 21a and 21b that oppose each other.

[0053] The conductive block 22 is in contact with the U-shaped plate spring member 21 while being sandwiched between portions of the U-shaped plate spring member 21. In other words, at least a part of the conductive block 22 is placed between the two opposing current paths 21a and 21b. The U-shaped plate spring member 21 grips the conductive block 22 from both sides of the conductive block 22 while pressure is applied to the conductive block 22. Accordingly, even when the pressurizing member 20 expands or contracts in the ±z directions and the plate spring member 21 and the conductive block 22 slide with respect to each other, the plate spring member 21 and the conductive block 22 are kept in contact with each other.

[0054] A surface of the conductive block 22, the surface being located near the semiconductor chip 2 (that is, a surface located in the -z direction), is in contact with the upper electrode 2a of the semiconductor chip 2.

[0055] The pressurizing component 20 also contains the spring 23. The spring 23 is, for example, a coil spring. As shown in Fig. As shown in Fig. 5, the spring 23 is placed between a surface of the conductive block 22, the surface being located near the top electrode of the housing 5 (that is, a surface located in the z-direction), and an inner wall of a bottom portion of the U-shaped plate spring member 21. Accordingly, even in a case where the spring 23 is conductive, the spring 23 functions as an inductor, and in particular, provides a high impedance at high frequencies, so that no current flows.

[0056] Also, a position P1 where the conductive block 22 is in contact with the plate spring member 21 while being sandwiched between portions of the plate spring member 21 is closer to the semiconductor chip 2 than a center point P2 in a height direction of the conductive block 22. <betrieb>

[0057] Fig. 6 is a schematic diagram showing a manner in which currents flow through the pressurizing member 20 of the semiconductor module 200 according to the second embodiment.

[0058] As indicated by arrows C4 in Fig. As indicated in Fig. 6, when the semiconductor chip 2 is short-circuited due to a malfunction or the like of the semiconductor chip 2, short-circuit currents flow through the opposing current paths 21a and 21b of the plate spring member 21 in the -z direction. Short-circuit currents flow into the conductive block 22 at a point where the plate spring member 21 and the conductive block 22 are in contact with each other. Currents flowing into the conductive block 22 then flow through surfaces of the conductive block 22, the surfaces respectively facing the current paths 21a and 21b (that is, surfaces located in a y direction and a -y direction), in the z direction, as indicated by arrows C5. Thereafter, currents indicated by arrows C5 through a surface of the conductive block 22, which surface is located in the z-direction, are reversed and flow in the -z-direction as indicated by arrows C5.Currents indicated by arrows C5 flow through surfaces of conductive block 22, where the surfaces are not close to current paths 21a and 21b (i.e., surfaces located in an x-direction and a -x-direction). It is particularly noted that the reason for currents flowing in the z-direction in conductive block 22, as indicated by arrows C5, is to minimize energy from currents.

[0059] In this way, since a current flows through the conductive block 22 in a direction opposite to a direction of a short-circuit current flowing through each of the current paths 21a and 21b of the diaphragm member 21, an attractive force generated between the two opposing current paths 21a and 21b in the diaphragm member 21 is relaxed. Accordingly, it is possible to suppress disconnection due to damage to the diaphragm member 21. <effekt>

[0060] In the semiconductor module according to the second embodiment, the plate spring member 21 has a U-shape, a bottom portion of the U-shaped plate spring member 21 is in contact with the top electrode 3 of the case 5, the conductive block 22 is in contact with the U-shaped plate spring member 21 while being sandwiched between portions of the U-shaped plate spring member 21, and a surface of the conductive block 22, the surface being located near the semiconductor chip 2, is in contact with the top electrode 2a of the semiconductor chip 2.

[0061] By placing the conductive block 12 such that the conductive block 22 is disposed between portions of the U-shaped plate spring member 21 as described above, it is possible to suppress disconnection due to damage to the plate spring member 21 when a short-circuit current flows through the plate spring member 21.

[0062] In the semiconductor module according to the second embodiment, the pressurizing member 20 further includes the spring 23, which is placed between a surface of the conductive block 22, the surface being located near the top-side electrode 3 of the case 5, and an inner wall of a bottom portion of the U-shaped plate spring member 21. Thus, due to a configuration in which the pressurizing member 20 includes the spring 23, the pressurizing member 20 is enabled to have elasticity.

[0063] Also in the semiconductor module according to the second embodiment, the position P1 where the conductive block 22 is in contact with the U-shaped plate spring member 21 while being sandwiched between portions of the U-shaped plate spring member 21 is closer to the semiconductor chip 2 than the center point P2 in the height direction of the conductive block 22.

[0064] Accordingly, the plate spring member 21 and the conductive block 22 are in contact with each other at a position closer to the semiconductor chip 2 than the center point P2 in the height direction of the conductive block 22, so that a portion of the conductive block 22 facing each of the current paths 21a and 21b of the plate spring member 21 can be made longer. Therefore, an attractive force generated between the current paths 21a and 21b of the plate spring member 21 can be further relaxed. <Erste Modifikation der zweiten und erfindungsgemäßen Ausführungsform>

[0065] Fig. 7 is a side view of an interior of a housing of a semiconductor module 200A according to a first modification of the second embodiment of the present invention. As shown in Fig. As shown in Fig. 7, in the first modification, the conductive block 22 included in a pressurizing member 20A has a horizontally elongated shape. In other words, a width of the conductive block 22 along a direction along which the conductive block 22 is sandwiched between portions of the U-shaped plate spring member 21 (i.e., the y-direction) is greater than a height of the conductive block 22.

[0066] In the first modification, since the conductive block 22 has a shape that is horizontally elongated, the plate spring member 21 also has a shape that is horizontally elongated.

[0067] As in Fig. 7, currents flowing through the conductive block 22 include a portion flowing in the same direction as a short-circuit current (arrows C4), as indicated by arrow C6. In this regard, a current indicated by arrow C6 flows through a surface of the conductive block 22, the surface not facing any of the current paths 21a and 21b (that is, surfaces located in the x-direction and the -x-direction). Then, in the first modification, each of the surfaces of the conductive block 22, the surfaces located in the x-direction and the -x-direction, is formed into a shape that is horizontally elongated. As a result, a current (a current indicated by arrow C6) flowing through the conductive block 22 in the same direction as a short-circuit current can be kept away from a short-circuit current (a current indicated by arrows C4) flowing through the plate spring member 21. <effekt>

[0068] In the semiconductor module 200A according to the first modification of the second embodiment of the present invention, a width of the conductive block 22 along a direction along which the conductive block 22 is sandwiched between portions of the U-shaped plate spring member 21 is larger than a height of the conductive block 22.

[0069] By designing such that a width of the conductive block 22 along a direction along which the conductive block 22 is sandwiched between portions of the U-shaped diaphragm member 21 is larger than a height of the conductive block 22, it is possible to isolate a current flowing through the conductive block 22 in the same direction as a short-circuit current from a short-circuit current flowing through the diaphragm member 21. Accordingly, an attractive force generated between the two opposing current paths 21a and 21b of the diaphragm member 21 is further relaxed. Consequently, it is possible to suppress disconnection due to damage to the diaphragm member 21. <Zweite Modifikation der zweiten Ausführungsform zur Erläuterung des technischen Hintergrunds der vorliegenden Erfindung>

[0070] Fig. 8 is a perspective view of an interior of a package of a semiconductor module 200B according to a second modification of the second embodiment.

[0071] As in Fig. 8, in the second modification, the conductive block 22 included in a pressurizing member 20B includes projections 22a and 22b.

[0072] Due to inclusion of the protrusions 22a and 22b in the conductive block 22, a width of a surface of the conductive block 22, the surface being in contact with the plate spring member 21 (that is, surfaces located in the y-direction and the -y-direction), is larger than a width of each of the current paths 21a and 21b of the plate spring member 21. In other words, the protrusions 22a and 22b of the conductive block 22 protrude from the plate spring member 21 in the ±x directions, respectively.

[0073] As in Fig. 8, currents flowing through the conductive block 22 include a portion flowing in the same direction as a short-circuit current (arrow C4) flowing through the diaphragm member 21, as indicated by arrows C6. In this regard, currents indicated by arrows C6 flow through surfaces of the conductive block 22, the surfaces not facing the current paths 21a and 21b (that is, surfaces located in the x-direction and the -x-direction). Then, in the second modification, surfaces of the conductive block 22, the surfaces located in the x-direction and the -x-direction, are formed to protrude from the diaphragm member 21.As a result, currents flowing through the conductive block 22 (currents indicated by arrows C6) flowing in the same direction as a short-circuit current can be kept away from a short-circuit current flowing through the diaphragm member 21 (a current indicated by arrow C4). <effekt>

[0074] In the semiconductor module 200B according to the second modification of the second embodiment, a width of a surface of the conductive block 22, the surface being in contact with the U-shaped plate spring member 21, is larger than a width of each of the current paths 21a and 21b of the plate spring member 21.

[0075] By designing such that a width of a surface of the conductive block 22, the surface of which is in contact with the diaphragm member 21, is larger than a width of each of the current paths 21a and 21b of the diaphragm member 21, it is possible to separate a current flowing through the conductive block 22 in the same direction as a short-circuit current from a short-circuit current flowing through the diaphragm member 21. Accordingly, an attractive force generated between the two opposing current paths 21a and 21b of the diaphragm member 21 is further relaxed. Consequently, disconnection due to damage to the diaphragm member 21 can be further suppressed.

[0076] It is particularly noted that the conductive block 22 may be formed into a shape having both a feature of the first modification ( Fig. 7) as well as a feature of the second modification ( Fig. 8). More specifically, the conductive block 22 may be configured in such a manner that a width of the conductive block 22 along a direction along which the conductive block 22 is sandwiched between portions of the U-shaped plate spring member 21 is greater than a height of the conductive block 22, and a width of a surface of the conductive block 22, the surface of which is in contact with the U-shaped plate spring member 21, is greater than a width of each of the current paths 21a and 21b of the plate spring member 21.

[0077] In the second embodiment, by combining the first and second modifications of currents flowing through the conductive block 22, currents (indicated by arrows C6 in Fig. 7 and Fig. 8) flowing through in the same direction as a short-circuit current, from a short-circuit current flowing through the diaphragm element 21 (a current indicated by arrows C4 in Fig. 7 and Fig. 8). Accordingly, an attractive force generated between the two opposing current paths 21a and 21b of the diaphragm member 21 is further relaxed. Consequently, it is possible to more reliably suppress disconnection due to damage to the diaphragm member 21. <Dritte Ausführungsform zur Erläuterung des technischen Hintergrunds >

[0078] Fig. 9 is a side view of an interior of a housing of a semiconductor module 300 according to a third embodiment for explaining the technical background of the present invention. As shown in Fig. As shown in Figure 9, in the semiconductor module 300, a plurality of semiconductor chips 2 and a plurality of pressurizing components 10 are accommodated in a housing 5.

[0079] In the third embodiment for explaining the technical background of the present invention, each of the pressurizing components 10 is placed for each of the semiconductor chips 2. A configuration of each of the pressurizing components 10 is similar to that in the first embodiment for explaining the technical background ( Fig. 1), and thus, their description is omitted. In the third embodiment for explaining the technical background, the plurality of semiconductor chips 2 are placed between a common top-side electrode 3 and a circuit pattern 41. The plurality of semiconductor chips 2 are, for example, an IGBT and a freewheeling diode connected in parallel with the IGBT.

[0080] It is specifically noted that in the third embodiment, for the purpose of explaining the technical background, the pressurizing member 10 may be replaced by any of the pressurizing members 10A, 10B, 20, 20A and 20B. <effekt>

[0081] In the semiconductor module 300 according to the third embodiment for explaining the background art, the plurality of semiconductor chips 2 and the plurality of pressurizing components 10 are included, each of the pressurizing components 10 is placed for each of the plurality of semiconductor chips 2, and the plurality of semiconductor chips 2 and the plurality of pressurizing components 10 are housed in the same package 5.

[0082] If the plurality of semiconductor chips 2 are placed in the housing 5 by placing each of the pressurizing members 10 for each of the plurality of semiconductor chips, it is possible to apply pressures to the plurality of semiconductor chips 2 evenly. Furthermore, as described in the first and second embodiments, in the semiconductor module 300 as well, damage to the plate spring member 11 can be suppressed, so that occurrence of arc discharge is suppressed. Accordingly, a strength required of the housing 5 of the semiconductor module 300 is reduced, so that an increase in size and weight of the semiconductor module 300 can be suppressed. Furthermore, a strength required of the housing 5 of the semiconductor module 300 is reduced, so that manufacturing costs can also be reduced.

[0083] Furthermore, in the semiconductor module according to each of the first to third embodiments, the semiconductor chip 2 may include a wide bandgap semiconductor. A wide bandgap semiconductor may also include silicon carbide (SiC). Further, in the semiconductor module according to each of the first to third embodiments, the semiconductor chip 2 may be an IGBT. On the other hand, the semiconductor chip may be a metal oxide semiconductor field-effect transistor (MOSFET).

[0084] Using a wide-bandgap semiconductor for semiconductor chip 2 increases the operating temperature of a semiconductor module. Using an IGBT as semiconductor chip 2 realizes high-speed, high-performance switching. Furthermore, a high voltage rating (high withstand voltage), high-frequency operation, and reduced switching losses can be achieved in a MOSFET made of SiC. Explanation of reference symbols 1, 10, 10A, 10B, 20, 20A, 20B pressurizing component 2 semiconductor chips 2a upper electrode 2b lower electrode 3 top electrode 4 Substrat 41 circuit patterns 42 insulating substrate 5, 6 housing 11, 21 Diaphragm component 11a, 11b, 21a, 21b current path 12, 22 conductive block 12a, 12b, 22a, 22b projection 100, 100A, 100B, 200, 200A, 200B, 300 semiconductor module< / effekt> < / effekt> < / effekt> < / effekt> < / betrieb> < / konfiguration> < / effekt> < / effekt> < / effekt> < / betrieb> < / konfiguration> < / basistechnik>

Claims

[1] Semiconductor module (100, 100A, 100B, 200, 200A, 200B), comprising: - at least one semiconductor chip (2); - a housing (5) in which the semiconductor chip (2) is accommodated; and - at least one pressurizing component (10, 10A, 10B, 20, 20A, 20B) placed between an upper electrode (2a) of the semiconductor chip (2) and a top-side electrode (3) provided in the housing (5), wherein the pressurizing component (10, 10A, 10B, 20, 20A, 20B) is configured to electrically connect the upper electrode (2a) and the top-side electrode (3), wherein: - the pressurising component (10, 10A, 10B, 20, 20A, 20B) is elastic, - the pressurising component (10, 10A, 10B, 20, 20A, 20B) comprises: - a conductive block (12, 22); and - a plate spring component (11, 21) having an opening and containing current paths (11a, 11b, 21a, 21b) which are opposite to each other, wherein at least a part of the conductive block (12, 22) is located between the current paths (11a, 11b, 21a, 21b), - the conductive block (12, 22) is in contact with an inner wall of the plate spring component (11, 21) defining the opening, - the plate spring component (21) has a U-shape, - a bottom portion of the U-shaped plate spring component (21) is in contact with the top electrode (3) of the housing (5), - the conductive block (22) is in contact with the U-shaped plate spring member (21) while being sandwiched between portions of the U-shaped plate spring member (21), - a surface of the conductive block (22), the surface being located near the semiconductor chip (2), is in contact with the upper electrode (2a) of the semiconductor chip (2), - a width of the conductive block (22) along a direction along which the conductive block is sandwiched between the portions of the U-shaped plate spring member (21) is greater than a height of the conductive block (22). [2] Semiconductor module (100, 100A, 100B, 200, 200A, 200B), comprising: - at least one semiconductor chip (2); - a housing (5) in which the semiconductor chip (2) is accommodated; and - at least one pressurizing component (10, 10A, 10B, 20, 20A, 20B) placed between an upper electrode (2a) of the semiconductor chip (2) and a top-side electrode (3) provided in the housing (5), wherein the pressurizing component (10, 10A, 10B, 20, 20A, 20B) is configured to electrically connect the upper electrode (2a) and the top-side electrode (3), wherein: - the pressurising component (10, 10A, 10B, 20, 20A, 20B) is elastic, - the pressurising component (10, 10A, 10B, 20, 20A, 20B) comprises: - a conductive block (12, 22); and - a plate spring component (11, 21) having an opening and containing current paths (11a, 11b, 21a, 21b) which are opposite to each other, wherein at least a part of the conductive block (12, 22) is located between the current paths (11a, 11b, 21a, 21b), - the conductive block (12, 22) is in contact with an inner wall of the plate spring component (11, 21) defining the opening, - the plate spring component (21) has a U-shape, - a bottom portion of the U-shaped plate spring component (21) is in contact with the top electrode (3) of the housing (5), - the conductive block (22) is in contact with the U-shaped plate spring member (21) while being sandwiched between portions of the U-shaped plate spring member (21), - a surface of the conductive block (22), the surface being located near the semiconductor chip (2), is in contact with the upper electrode (2a) of the semiconductor chip (2), - a width of the conductive block (22) along a direction along which the conductive block (22) is sandwiched between the portions of the U-shaped plate spring member (21) is greater than a height of the conductive block (22), and - a width of a surface of the conductive block (22), the surface being in contact with the U-shaped plate spring member (21), is greater than a width of a portion of the plate spring member (21), the portion being in contact with the conductive block (22). [3] The semiconductor module (100, 100A, 100B, 200, 200A, 200B) according to any one of the preceding claims, wherein the pressurizing member (10, 10A, 10B, 20, 20A, 20B) further includes a spring (23) disposed between a surface of the conductive block (22), the surface being located near the top electrode (3) of the case (5), and an inner wall of the bottom portion of the U-shaped plate spring member (21). [4] The semiconductor module (100, 100A, 100B, 200, 200A, 200B) according to any one of the preceding claims, wherein a position where the conductive block (22) is in contact with the U-shaped plate spring member (21) while being sandwiched between the portions of the U-shaped plate spring member (21) is closer to the semiconductor chip (2) than a center point in a height direction of the conductive block (22). [5] The semiconductor module (100, 100A, 100B, 200, 200A, 200B) according to any one of the preceding claims, wherein a width of a surface of the conductive block (22), the surface being in contact with the U-shaped plate spring member (21), is greater than a width of each of the current paths (11a, 11b, 21a, 21b) of the plate spring member (21). [6] Semiconductor module (100, 100A, 100B, 200, 200A, 200B) according to one of the preceding claims, wherein: - the at least one semiconductor chip (2) comprises a plurality of semiconductor chips (2), - the at least one pressurising component (10, 10A, 10B, 20, 20A, 20B) comprises a plurality of pressurising components (10, 10A, 10B), - each of the pressurizing components (10, 10A, 10B, 20, 20A, 20B) is placed for each of the plurality of semiconductor chips (2), and - the plurality of semiconductor chips (2) and the plurality of pressurizing components (10, 10A, 10B, 20, 20A, 20B) are accommodated in the same housing (5). [7] Semiconductor module (100, 100A, 100B, 200, 200A, 200B) according to one of the preceding claims, wherein the at least one semiconductor chip (2) contains a wide bandgap semiconductor. [8] The semiconductor module (100, 100A, 100B, 200, 200A, 200B) according to claim 7, wherein the wide band gap semiconductor includes silicon carbide. [9] Semiconductor module (100, 100A, 100B, 200, 200A, 200B) according to one of the preceding claims, wherein the at least one semiconductor chip (2) is an IGBT. [10] Semiconductor module (100, 100A, 100B, 200, 200A, 200B) according to one of claims 1 to 8, wherein the at least one semiconductor chip (2) is a MOSFET.

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