Light-emitting device and display device

Abstract

Light-emitting device, which includes: a first light-emitting device (47N) and a second light-emitting device (47R), wherein the first light-emitting device (47N) comprises a first pixel electrode (191), a first optical matching layer (199N), a first light-emitting layer (193N), a second light-emitting layer (193R), a third light-emitting layer (193G), a fourth light-emitting layer (193B) and a common electrode (115), wherein the second light-emitting device (47R) comprises a second pixel electrode (191), a second optical matching layer (199R), the first light-emitting layer (193N), the second light-emitting layer (193R), the third light-emitting layer (193G), the fourth light-emitting layer (193B) and the common electrode (115), wherein the first optical matching layer (199N) is positioned between the first pixel electrode (191) and the common electrode (115), wherein the second optical matching layer (199R) is positioned between the second pixel electrode (191) and the common electrode (115), wherein the first light-emitting layer (193N), the second light-emitting layer (193R), the third light-emitting layer (193G) and the fourth light-emitting layer (193B) each comprise a region positioned between the first pixel electrode (191) and the common electrode (115), and a region positioned between the second pixel electrode (191) and the common electrode (115), wherein the first light-emitting layer (193N) is designed to emit infrared light, wherein the second light-emitting layer (193R) is designed to emit visible light, wherein the third light-emitting layer (193G) is configured to emit visible light with a wavelength shorter than that of visible light emitted by the second light-emitting layer (193R), wherein the fourth light-emitting layer (193B) is configured to emit visible light with a wavelength shorter than that of visible light emitted by the third light-emitting layer (193G), wherein the first light-emitting device (47N) emits infrared light emitted by the first light-emitting layer (193N), and wherein the second light-emitting device (47R) emits visible light emitted by one of the second light-emitting layer (193R), the third light-emitting layer (193G) and the fourth light-emitting layer (193B).

Description

Technical field

[0001] One embodiment of the present invention relates to a light-emitting device. One embodiment of the present invention relates to a display device. One embodiment of the present invention relates to a display device comprising a light-receiving device and a light-emitting device.

[0002] It should be noted that an embodiment of the present invention is not limited to the aforementioned technical field. Examples of the technical field of an embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, an energy storage device, a storage device, an electronic device, a lighting device, an input device (e.g., a touch sensor), an input / output device (e.g., a touchscreen), an operating method therefor, and a manufacturing method therefor. State of the art

[0003] In recent years, display devices are expected to find a variety of applications. Examples of uses for a large display device include a home television (also known as a TV or television receiver), digital signage, and a public information display (PID). Furthermore, smartphones and tablet computers with touchscreens are under development as portable information devices.

[0004] For example, light-emitting devices have been developed as display devices, incorporating light-emitting devices (also referred to as light-emitting elements). Light-emitting devices that utilize electroluminescence (hereinafter referred to as EL) (also referred to as EL devices or EL elements) have the following characteristics: they can be easily reduced in thickness and weight, exhibit a fast response to an input signal, and can be driven by a low-voltage DC power source; thus, they are used in display devices. Patent document 1, for example, discloses a flexible light-emitting device incorporating an organic EL device (also referred to as an organic EL element).

[0005] Image sensors are used for various purposes, such as personal authentication, fault analysis, medical diagnosis, and security. The wavelengths of light sources used in image sensors vary depending on the application. Light with different wavelengths, for example, short wavelengths like visible light and X-rays, and long wavelengths like near-infrared light, are used in image sensors.

[0006] It has also been considered that light-emitting devices could be applied to the light sources of image sensors described above. Light-emitting devices are also known from US 2016 / 0093678 A1 and US 2016 / 0126500 A1. [Reference][Patent document]

[0007] [Patent Document 1] JP 2014-197522 A Summary of the invention Problem to be solved by the invention

[0008] One object of an embodiment of the present invention is to provide a light-emitting device that has a function for emitting visible light and infrared light. One object of an embodiment of the present invention is to provide a very practical light-emitting device. One object of an embodiment of the present invention is to provide a multifunctional light-emitting device. One object of an embodiment of the present invention is to provide a novel light-emitting device.

[0009] One object of an embodiment of the present invention is to provide a display device that has a light-sensing function. One object of an embodiment of the present invention is to provide a display device that has a function for emitting visible light and infrared light as well as a light-sensing function. One object of an embodiment of the present invention is to provide a very practical display device. One object of an embodiment of the present invention is to provide a multifunctional display device. One object of an embodiment of the present invention is to provide a novel display device. At least one of these objects is achieved by a light-emitting device according to claim 1 and by a display device according to one of claims 9 and 15.Advantageous embodiments are described in the dependent claims.

[0010] It should be noted that the description of these tasks does not preclude the existence of further tasks. An embodiment of the present invention need not necessarily fulfill all tasks. Further tasks may be derived from the explanation of the description, the drawings, and the claims. Means to solve the problem

[0011] A light-emitting device of an embodiment of the present invention comprises a first light-emitting device and a second light-emitting device. The first light-emitting device comprises a first pixel electrode, a first optical matching layer, a first light-emitting layer, a second light-emitting layer, and a common electrode. The second light-emitting device comprises a second pixel electrode, a second optical matching layer, the first light-emitting layer, the second light-emitting layer, and the common electrode. The first optical matching layer is positioned between the first pixel electrode and the common electrode. The second optical matching layer is positioned between the second pixel electrode and the common electrode.The first light-emitting layer and the second light-emitting layer each have a region positioned between the first pixel electrode and the common electrode, and a region positioned between the second pixel electrode and the common electrode. The first light-emitting device emits infrared light emitted by the first light-emitting layer. The second light-emitting device emits visible light emitted by the second light-emitting layer.

[0012] The light-emitting device of an embodiment of the present invention preferably further comprises a third light-emitting device. The first light-emitting device and the second light-emitting device preferably further comprise a third light-emitting layer. The third light-emitting device preferably comprises a third pixel electrode, a third optical matching layer, the first light-emitting layer, the second light-emitting layer, the third light-emitting layer, and the common electrode. The third light-emitting layer preferably has a region positioned between the first pixel electrode and the common electrode, a region positioned between the second pixel electrode and the common electrode, and a region positioned between the third pixel electrode and the common electrode.The third light-emitting device preferably emits visible light emitted by the third light-emitting layer. The second light-emitting layer preferably emits light whose wavelength differs from that of the light emitted by the third light-emitting layer.

[0013] Alternatively, the first light-emitting device and the second light-emitting device preferably further include the third light-emitting layer. The third light-emitting layer preferably has a region positioned between the first pixel electrode and the common electrode, and a region positioned between the second pixel electrode and the common electrode. The first light-emitting device preferably emits both infrared light emitted by the first light-emitting layer and visible light emitted by the third light-emitting layer.

[0014] The first light-emitting device and the second light-emitting device preferably also include a charge-generating layer. The charge-generating layer is preferably positioned between the first light-emitting layer and the second light-emitting layer.

[0015] The first light-emitting layer preferably has a region positioned between the first optical matching layer and the second light-emitting layer, and a region positioned between the second optical matching layer and the second light-emitting layer.

[0016] A light-emitting device of an embodiment of the present invention comprises a first light-emitting device and a second light-emitting device. The first light-emitting device comprises a first pixel electrode, a first optical matching layer, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, a fourth light-emitting layer, and a common electrode. The second light-emitting device comprises a second pixel electrode, a second optical matching layer, the first light-emitting layer, the second light-emitting layer, the third light-emitting layer, the fourth light-emitting layer, and the common electrode. The first optical matching layer is positioned between the first pixel electrode and the common electrode.The second optical matching layer is positioned between the second pixel electrode and the common electrode. The first, second, third, and fourth light-emitting layers each have a region positioned between the first pixel electrode and the common electrode, and a region positioned between the second pixel electrode and the common electrode. The first light-emitting layer has an infrared light-emitting function. The second light-emitting layer has a visible light-emitting function. The third light-emitting layer has a visible light-emitting function with a wavelength shorter than that of the visible light emitted by the second light-emitting layer.The fourth light-emitting layer has a function for emitting visible light with a wavelength shorter than that of the visible light emitted by the third light-emitting layer. The first light-emitting device emits infrared light emitted by the first light-emitting layer. The second light-emitting device emits visible light emitted by the second light-emitting layer, the third light-emitting layer, or the fourth light-emitting layer.

[0017] The second light-emitting layer preferably has a function for emitting red light. The third light-emitting layer preferably has a function for emitting green light. The fourth light-emitting layer preferably has a function for emitting blue light.

[0018] The first light-emitting device and the second light-emitting device preferably further include a first charge-generating layer. The first charge-generating layer is preferably positioned between the first light-emitting layer and the fourth light-emitting layer.

[0019] The first light-emitting device and the second light-emitting device preferably also include a second charge-generating layer. The second charge-generating layer is preferably positioned between the first light-emitting layer and the second light-emitting layer.

[0020] It is preferred that the first light-emitting layer, the second light-emitting layer, the third light-emitting layer and the fourth light-emitting layer are arranged one above the other in that order from the side closest to the first optical matching layer, and that the first light-emitting layer, the second light-emitting layer, the third light-emitting layer and the fourth light-emitting layer are arranged one above the other in that order from the side closest to the second optical matching layer.

[0021] The first light-emitting device preferably emits both infrared light, emitted by the first light-emitting layer, and visible light, emitted by the fourth light-emitting layer.

[0022] The first optical matching layer can be positioned between the first pixel electrode and the first light-emitting layer, or between the common electrode and the first light-emitting layer.

[0023] One embodiment of the present invention is a display device comprising, in a display section, a first light-emitting device, a second light-emitting device, and a light-receiving device. The first light-emitting device comprises a first pixel electrode, a first optical matching layer, a first light-emitting layer, a second light-emitting layer, and a common electrode. The second light-emitting device comprises a second pixel electrode, a second optical matching layer, the first light-emitting layer, the second light-emitting layer, and the common electrode. The first optical matching layer is positioned between the first pixel electrode and the common electrode. The second optical matching layer is positioned between the second pixel electrode and the common electrode.The first light-emitting layer and the second light-emitting layer each have a region positioned between the first pixel electrode and the common electrode, and a region positioned between the second pixel electrode and the common electrode. The light-receiving device includes a third pixel electrode, an active layer, and the common electrode. The active layer is positioned between the third pixel electrode and the common electrode. The active layer contains an organic compound. The first light-emitting device emits infrared light emitted by the first light-emitting layer. The second light-emitting device emits visible light emitted by the second light-emitting layer. The light-receiving device has a function for absorbing at least a portion of the visible light and a portion of the infrared light.

[0024] Another embodiment of the present invention is a display device comprising, in a display section, a first light-emitting device, a second light-emitting device, and a light-receiving device. The first light-emitting device comprises a first pixel electrode, a common layer, a first optical matching layer, a first light-emitting layer, a second light-emitting layer, and a common electrode. The second light-emitting device comprises a second pixel electrode, the common layer, a second optical matching layer, the first light-emitting layer, the second light-emitting layer, and the common electrode. The first optical matching layer is positioned between the first pixel electrode and the common electrode. The second optical matching layer is positioned between the second pixel electrode and the common electrode.The first light-emitting layer and the second light-emitting layer each have a region positioned between the first pixel electrode and the common electrode, and a region positioned between the second pixel electrode and the common electrode. The light-receiving device includes a third pixel electrode, the common layer, an active layer, and the common electrode. The active layer is positioned between the third pixel electrode and the common electrode. The active layer contains an organic compound. The first light-emitting device emits infrared light emitted by the first light-emitting layer. The second light-emitting device emits visible light emitted by the second light-emitting layer.The light-receiving device has a function for absorbing at least a portion of visible light and a portion of infrared light. The common layer has a region positioned between the first pixel electrode and the common electrode, a region positioned between the second pixel electrode and the common electrode, and a region positioned between the third pixel electrode and the common electrode.

[0025] The display device of an embodiment of the present invention preferably further comprises a third light-emitting device. The first light-emitting device and the second light-emitting device preferably further comprise a third light-emitting layer. The third light-emitting device preferably comprises a fourth pixel electrode, a third optical matching layer, the first light-emitting layer, the second light-emitting layer, the third light-emitting layer, and the common electrode. The third light-emitting layer preferably has a region positioned between the first pixel electrode and the common electrode, a region positioned between the second pixel electrode and the common electrode, and a region positioned between the fourth pixel electrode and the common electrode.The third light-emitting device preferably emits visible light emitted by the third light-emitting layer. The second light-emitting layer preferably emits light whose wavelength differs from that of the light emitted by the third light-emitting layer.

[0026] Alternatively, the first light-emitting device and the second light-emitting device preferably further include a third light-emitting layer. The third light-emitting layer preferably has a region positioned between the first pixel electrode and the common electrode, and a region positioned between the second pixel electrode and the common electrode. The first light-emitting device preferably emits both infrared light emitted by the first light-emitting layer and visible light emitted by the third light-emitting layer. The first light-emitting device and the second light-emitting device preferably further include a charge-generating layer. The charge-generating layer is preferably positioned between the first light-emitting layer and the second light-emitting layer.

[0027] The first light-emitting layer preferably has a region positioned between the first optical matching layer and the second light-emitting layer, and a region positioned between the second optical matching layer and the second light-emitting layer.

[0028] Another embodiment of the present invention is a display device comprising, in a display section, a first light-emitting device, a second light-emitting device, and a light-receiving device. The first light-emitting device comprises a first pixel electrode, a first optical matching layer, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, a fourth light-emitting layer, and a common electrode. The second light-emitting device comprises a second pixel electrode, a second optical matching layer, the first light-emitting layer, the second light-emitting layer, the third light-emitting layer, the fourth light-emitting layer, and the common electrode. The first optical matching layer is positioned between the first pixel electrode and the common electrode.The second optical matching layer is positioned between the second pixel electrode and the common electrode. The first, second, third, and fourth light-emitting layers each have a region positioned between the first pixel electrode and the common electrode, and a region positioned between the second pixel electrode and the common electrode. The first light-emitting layer has an infrared light-emitting function. The second light-emitting layer has a visible light-emitting function. The third light-emitting layer has a visible light-emitting function with a wavelength shorter than that of the visible light emitted by the second light-emitting layer.The fourth light-emitting layer has a function for emitting visible light with a wavelength shorter than that of the visible light emitted by the third light-emitting layer. The light-receiving device includes a third pixel electrode, an active layer, and the common electrode. The active layer is positioned between the third pixel electrode and the common electrode. The active layer contains an organic compound. The first light-emitting device emits infrared light emitted by the first light-emitting layer. The second light-emitting device emits visible light emitted by the second light-emitting layer, the third light-emitting layer, or the fourth light-emitting layer.The light-receiving device has a function for absorbing at least a portion of visible light and a portion of infrared light.

[0029] The second light-emitting layer preferably has a function for emitting red light. The third light-emitting layer preferably has a function for emitting green light. The fourth light-emitting layer preferably has a function for emitting blue light.

[0030] The first light-emitting device and the second light-emitting device preferably further include a first charge-generating layer. The first charge-generating layer is preferably positioned between the first light-emitting layer and the fourth light-emitting layer.

[0031] The first light-emitting device and the second light-emitting device preferably also include a second charge-generating layer. The second charge-generating layer is preferably positioned between the first light-emitting layer and the second light-emitting layer.

[0032] It is preferred that the first light-emitting layer, the second light-emitting layer, the third light-emitting layer and the fourth light-emitting layer are arranged one above the other in that order from the side closest to the first optical matching layer, and that the first light-emitting layer, the second light-emitting layer, the third light-emitting layer and the fourth light-emitting layer are arranged one above the other in that order from the side closest to the second optical matching layer.

[0033] The first light-emitting device preferably emits both infrared light, emitted by the first light-emitting layer, and visible light, emitted by the fourth light-emitting layer.

[0034] The first optical matching layer can be positioned between the first pixel electrode and the first light-emitting layer, or between the common electrode and the first light-emitting layer.

[0035] The display section preferably includes a lens. The lens preferably has a portion that overlaps the light-receiving device. Light enters the light-receiving device via the lens.

[0036] The display section preferably includes a partition. The partition preferably covers an end section of the first pixel electrode, an end section of the second pixel electrode, and an end section of the third pixel electrode. The third pixel electrode is preferably electrically isolated from the first and second pixel electrodes by the partition. The partition preferably has a function for absorbing at least a portion of the light emitted by the first light-emitting device.

[0037] The display section preferably includes a colored layer. The colored layer preferably has a portion that is in contact with a side surface of the partition. The colored layer preferably comprises a color filter or a black matrix.

[0038] The display section preferably has some flexibility.

[0039] One embodiment of the present invention is a module comprising the light-emitting device or the display device with one of the aforementioned structures. This module is provided with a flexible printed circuit (hereinafter referred to as FPC) or a connector, such as a tape carrier package (TCP), or is mounted with an integrated circuit (IC) by a chip-on-glass (COG) method, a chip-on-film (COF) method, or the like. It should be noted that in this description and the like, in some instances, a module comprising a light-emitting device is referred to as a light-emitting module, and a module comprising a display device is referred to as a display module.

[0040] One embodiment of the present invention is an electronic device comprising the aforementioned module and an antenna, a battery, a housing, a camera, a loudspeaker, a microphone and / or a control button. Effect of the invention

[0041] According to one embodiment of the present invention, a light-emitting device with a function for emitting visible light and infrared light can be provided. According to one embodiment of the present invention, a very practical light-emitting device can be provided. According to one embodiment of the present invention, a multifunctional light-emitting device can be provided. According to one embodiment of the present invention, a novel light-emitting device can be provided.

[0042] According to one embodiment of the present invention, a display device can be provided with a light-sensing function. According to one embodiment of the present invention, a display device can be provided with a function for emitting visible and infrared light, as well as with a light-sensing function. According to one embodiment of the present invention, a very practical display device can be provided. According to one embodiment of the present invention, a multifunctional display device can be provided. According to one embodiment of the present invention, a novel display device can be provided.

[0043] It should be noted that the description of these effects does not preclude the existence of further effects. An embodiment of the present invention does not necessarily exhibit all of the effects. Further effects can be derived from the explanation of the description, the drawings, and the claims. Brief description of the drawings Fig. 1A and Fig. Figure 1B is a cross-sectional view that represents an example of a light-emitting device. Fig. 1C and Fig. 1D represents a top view of an example of a pixel. Fig. 2A and Fig. 2B each represent a multilayered structure of a light-emitting device. Fig. 3A and Fig. 3B each represent a multilayered structure of a light-emitting device. Fig. Figure 4 represents a multilayered structure of a light-emitting device. Fig. Figure 5 represents a positional relationship of light-emitting areas. Fig. 6A to Fig. 6E each represent a multilayered structure of a light-emitting device. Fig. 7A to Fig. Figures 7C are each a cross-sectional view that represents an example of a light-emitting device. Fig. 7D to Fig. 7H each represent a top view of an example of a pixel. Fig. 8A and Fig. 8B each represent a multilayered structure of a light-emitting device. Fig. 9A and Fig. Figure 9B is a cross-sectional view that illustrates an example of a light-emitting device. Fig. 10A and Fig. Figures 10B are each a cross-sectional view that represents an example of a light-emitting device. Fig. Figure 11 is a perspective view of an example of a light-emitting device. Fig. 12A and Fig. Figures 12B are each a cross-sectional view that represents an example of a light-emitting device. Fig. Figure 13A is a cross-sectional view showing an example of a light-emitting device. Fig. 13B represents an example of a transistor. Fig. 14A to Fig. Each of the 14D diagrams is a cross-sectional view that illustrates an example of a display device. Fig. 15A to Fig. 15F each show a top view of an example of a pixel. Fig. 16A to Fig. Figures 16C are each a cross-sectional view that represents an example of a display device. Fig. 17A to Fig. Figures 17C are each a cross-sectional view that illustrates an example of a display device. Fig. Figure 18 is a cross-sectional view that shows an example of a display device. Fig. 19A and Fig. Figure 19B is a cross-sectional view that illustrates an example of a display device. Fig. 20A is a cross-sectional view that shows an example of a display device. Fig. 20B represents an example of a transistor. Fig. Figure 21 is a cross-sectional view that shows an example of a display device. Fig. 22A and Fig. 22B are each a circuit diagram that represents an example of a pixel circuit. Fig. 23A and Fig. 23B represents an example of an electronic device. Fig. 24A to Fig. 24D each represent an example of an electronic device. Fig. 25A to Fig. 25F each represent an example of an electronic device. Fig. 26A and Fig. 26B each represent a light-emitting device of an example. Fig. Figure 27 shows emission spectra used for calculation in an example. Fig. Figure 28 shows emission spectra, which are the calculation results of an example. Fig. Figure 29 shows emission spectra, which are the calculation results of an example. Fig. Figure 30 shows emission spectra, which are the calculation results of an example. Fig. Figure 31 shows emission spectra, which are the calculation results of an example. Embodiments of the invention

[0044] Embodiments are described in detail with reference to the drawings. It should be noted that the present invention is not limited to the following description, and it is readily apparent to those skilled in the art that modes and details of the present invention can be modified in various ways without departing from the concept and scope of protection of the present invention. Therefore, the present invention should not be considered as limited to the description of the following embodiments.

[0045] It should be noted that in the structures of the present invention, which are described below, identical sections or sections with similar functions are provided with the same reference numerals in different drawings, and that the description of these sections is not repeated. The same hatching pattern is used for sections with similar functions, and in some cases the sections are not identified by specific reference numerals.

[0046] Furthermore, for ease of understanding, the position, size, area, or the like of any structure depicted in the drawings does not, in some cases, represent the exact position, size, area, or the like. The disclosed invention is therefore not necessarily limited to the position, size, area, or the like disclosed in the drawings.

[0047] It should be noted that the terms "film" and "layer" can be used interchangeably depending on the context or circumstances. For example, the term "conducting layer" can be replaced by the term "conducting film." Similarly, the term "insulating film" can be replaced by the term "insulating layer." (Version 1)

[0048] In this embodiment, a light-emitting device of an embodiment of the present invention is used by means of Fig. 1 to Fig. 13 described.

[0049] A light-emitting device of an embodiment of the present invention comprises a light-emitting device that emits infrared light and a light-emitting device that emits visible light. Visible light is defined as light with a wavelength greater than or equal to 400 nm and less than 750 nm, and examples include red, green, or blue light. Infrared light is defined as near-infrared light, in particular light with a wavelength greater than or equal to 750 nm and less than or equal to 1300 nm.

[0050] In the light-emitting device of an embodiment of the present invention, a light-emitting device that emits infrared light and a light-emitting device that emits visible light comprise a plurality of common light-emitting layers. By providing optical matching layers of different thicknesses in these two light-emitting devices, infrared light can be extracted from one light-emitting device, and visible light can be extracted from the other light-emitting device.

[0051] A light-emitting device of an embodiment of the present invention comprises a first light-emitting device and a second light-emitting device. The first light-emitting device comprises a first pixel electrode, a first optical matching layer, a first light-emitting layer, a second light-emitting layer, and a common electrode. The second light-emitting device comprises a second pixel electrode, a second optical matching layer, the first light-emitting layer, the second light-emitting layer, and the common electrode. The first optical matching layer is positioned between the first pixel electrode and the common electrode. The second optical matching layer is positioned between the second pixel electrode and the common electrode.The first light-emitting layer and the second light-emitting layer each have a region positioned between the first pixel electrode and the common electrode, and a region positioned between the second pixel electrode and the common electrode. The first light-emitting device emits infrared light emitted by the first light-emitting layer. The second light-emitting device emits visible light emitted by the second light-emitting layer.

[0052] The light-emitting material contained in the first light-emitting layer preferably emits light with a maximum peak wavelength (also referred to as wavelength with highest peak intensity) of more than or equal to 750 nm and less than or equal to 1300 nm. The light-emitting material contained in the second light-emitting layer preferably emits light with a maximum peak wavelength of more than or equal to 400 nm and less than or equal to 750 nm. It should be noted that in this description and the like, the simple term "peak wavelength" may be reformulated as "maximum peak wavelength".

[0053] The light-emitting device of an embodiment of the present invention can be used as the light source of a sensor (e.g., an image sensor or an optical touch sensor). The light-emitting device of an embodiment of the present invention, which can emit both visible and infrared light, is advantageous because it can be combined with a sensor that uses visible light as the light source as well as with a sensor that uses infrared light as the light source. This light-emitting device can also be used as the light source of a sensor that uses both visible and infrared light as the light source, which can enhance the functionality of the sensor. Furthermore, the light-emitting device of an embodiment of the present invention that can emit visible light can be used as a display device.

[0054] In the light-emitting device of an embodiment of the present invention, the infrared-emitting device and the visible-emitting device can share a common layer. Therefore, an infrared-emitting function can be added to the light-emitting device without significantly increasing the number of manufacturing steps. For example, a layer not used for optical matching can be shared between the infrared-emitting device and the visible-emitting device, beneath a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer.

[0055] Fig. 1A and Fig. Figure 1B is a cross-sectional view of the light-emitting device of an embodiment of the present invention.

[0056] A light-emitting device 40A and a light-emitting device 40B in Fig. 1A or Fig. 1B emits red (R-) light, green (G-) light, blue (B-) light and infrared (IR) light.

[0057] The light-emitting device 40A and the light-emitting device 40B each include a light-emitting device from which infrared light is extracted, in addition to the light-emitting devices from which red light, green light and blue light are extracted.

[0058] The light-emitting device of an embodiment of the present invention can have a top-emission structure in which light is emitted in the direction opposite a substrate above which the light-emitting devices are formed, a bottom-emission structure in which light is emitted in the direction of the substrate above which the light-emitting devices are formed, or a dual-emission structure in which light is emitted in both directions.

[0059] Fig. 1A and Fig. 1B each represent a light-emitting device in which the light-emitting devices emit light in the direction of a substrate 152.

[0060] The in Fig. The light-emitting device 40A shown in Figure 1A includes a light-emitting device 47N, a light-emitting device 47R, a light-emitting device 47G and a light-emitting device 47B between a substrate 151 and the substrate 152.

[0061] The in Fig. The light-emitting device 40B shown in Figure 1B includes, in addition to the components of the light-emitting device 40A, a layer 45 with transistors between the substrate 151 and the substrate 152.

[0062] In the case of the light-emitting device 40A and the light-emitting device 40B, the light-emitting device 47N can emit infrared light (IR), the light-emitting device 47R red (R-) light, the light-emitting device 47G green (G-) light and the light-emitting device 47B blue (B-) light.

[0063] Layer 45, containing transistors, comprises a variety of transistors. For example, layer 45 includes transistors that are electrically connected to the light-emitting devices.

[0064] The maximum peak wavelength in the visible light range of the emission spectrum of the light-emitting device 47B (also referred to as the first peak wavelength) may, for example, be greater than or equal to 400 nm and less than or equal to 480 nm.

[0065] The maximum peak wavelength in the visible light range of the emission spectrum of the light-emitting device 47R (also referred to as the second peak wavelength) may, for example, be more than or equal to 580 nm and less than 750 nm.

[0066] The maximum peak wavelength in the visible light region of the emission spectrum of the light-emitting device 47G (also referred to as the third peak wavelength) can be a wavelength between the first and second peak wavelengths. For example, the third peak wavelength can be greater than or equal to 480 nm and less than 580 nm.

[0067] The maximum peak wavelength in the infrared region of the emission spectrum of the light-emitting device 47N (also referred to as the fourth peak wavelength) can be longer than the second peak wavelength. For example, the fourth peak wavelength can be greater than or equal to 750 nm and less than or equal to 1300 nm. [Pixel]

[0068] Fig. 1C and Fig. Each 1D represents a structural example of a pixel.

[0069] The light-emitting device of an embodiment of the present invention comprises a plurality of pixels arranged in a matrix. Each pixel comprises at least one subpixel. Each subpixel comprises a light-emitting device. For example, a pixel may comprise four subpixels (e.g., light of three colors R, G, and B, and infrared light; or light of three colors yellow (Y), cyan (C), and magenta (M), and infrared light) or alternatively five subpixels (e.g., light of four colors R, G, B, and white (W), and infrared light; or light of four colors R, G, B, and Y, and infrared light).

[0070] The in Fig. 1C and Fig. The 1D represented pixels each contain four subpixels for red (R-) light, green (G-) light, blue (B-) light and infrared (IR) light (four light-emitting devices). Fig. 1C represents an example in which four subpixels are arranged side by side in a transverse direction, and Fig. 1D represents an example in which four subpixels are arranged in a 2 × 2 matrix. [Structure of the light-emitting device (single structure)]

[0071] The structures of the light-emitting device in the light-emitting apparatus of an embodiment of the present invention are described below with reference to Fig. 2 to Fig. 5 described.

[0072] It should be noted that when a structure with a multitude of components (light-emitting devices, light-emitting layers, and the like) is described in this description and the like, and a common feature of each component is described, the alphabet is omitted unless otherwise specified. For example, a light-emitting layer 193R, a light-emitting layer 193G, and the like are in some cases referred to as a light-emitting layer 193 when their common feature is described.

[0073] The light-emitting devices that are in Fig. 2A, Fig. 2B, Fig. 3A, Fig. 3B and Fig. Figure 4 shows each of the following light-emitting devices: 4B, which emits blue (B) light; 47G, which emits green (G) light; 47R, which emits red (R) light; and 47N, which emits infrared (IR) light, which is located above the substrate 151, with the layer 45 containing transistors arranged between them.

[0074] The light-emitting device comprises a pixel electrode 191 and a common electrode 115. The pixel electrode 191 is provided for each light-emitting device. The common electrode 115 is used jointly by a plurality of light-emitting devices. The pixel electrode 191 and the common electrode 115 can each have a single-layer or a multi-layer structure.

[0075] The material, thickness, and other characteristics of a pair of electrodes can be the same across a wide variety of light-emitting devices. This can reduce the manufacturing costs of the light-emitting device and simplify the manufacturing process.

[0076] The light-emitting device in the light-emitting assembly of an embodiment of the present invention preferably has an optical microresonator (microcavity) structure. Therefore, one of the pair of electrodes of the light-emitting device is preferably an electrode that has both transmittance and reflection properties for visible and infrared light (a semitransparent and semireflective electrode), while the other is preferably an electrode that has reflection properties for both visible and infrared light (a reflective electrode). By having a microcavity structure, the light received by the light-emitting layer can be brought into resonance between the electrodes, thereby amplifying the light emitted by the light-emitting device.

[0077] It should be noted that the semitransparent and semireflective electrode may have a multilayer structure consisting of a reflective electrode and an electrode with transmittance for visible and infrared light (also referred to as a transparent electrode). In this description and similar texts, in some cases a reflective electrode serving as part of a semitransparent and semireflective electrode is referred to as a pixel electrode or common electrode, and a transparent electrode as an optical matching layer; however, it can be assumed that the transparent electrode (optical matching layer) also serves as a pixel electrode or common electrode.

[0078] The transparent electrode has a light transmittance of 40% or higher. For the light-emitting device, an electrode is preferably used, for example, whose transmittance is 40% or higher for both visible light (light with a wavelength greater than or equal to 400 nm and less than 750 nm) and near-infrared light (light with a wavelength greater than or equal to 750 nm and less than or equal to 1300 nm). The semi-transparent and semi-reflective electrode has a reflectance of 10% or higher and less than or equal to 95% for both visible and near-infrared light, preferably 30% or higher and less than or equal to 80%. The reflective electrode has a reflectance of 40% or higher and less than or equal to 100% for both visible and near-infrared light, preferably 70% or higher and less than or equal to 100%.These electrodes preferably have a specific resistance of 1 × 10. -2 Ωcm or lower.

[0079] Fig. 2A, Fig. 2B, Fig. 3A and Fig. 3B each represent a light-emitting device with a top-emission structure, in which the light-emitting devices are formed above the substrate 151 and light is emitted from the light-emitting devices in the direction of the common electrode 115. Therefore, a semi-transparent and semi-reflective electrode is used as the common electrode 115, and a reflective electrode is used as the pixel electrode 191.

[0080] Fig. In contrast, Figure 4 represents a light-emitting device with a bottom-emission structure, in which the light-emitting devices are formed above the substrate 151 and light is emitted from the light-emitting devices towards the substrate 151. Therefore, a semi-transparent and semi-reflective electrode is used as the pixel electrode 191, and a reflective electrode is used as the common electrode 115.

[0081] In the light-emitting device of an embodiment of the present invention, it is preferred that an optical matching layer 199 is used to match the optical path length between a pair of electrodes of each light-emitting device, and that the other layers are used jointly by a plurality of light-emitting devices. In this way, the deposition steps in the fabrication of the light-emitting device can be reduced, thereby reducing the manufacturing costs of the light-emitting device and simplifying the manufacturing process.

[0082] In the light-emitting device 47B, which emits blue light, the thickness of an optical matching layer 199B is preferably adjusted such that the optical path length between a pair of electrodes is such that blue light is amplified. In the light-emitting device 47G, which emits green light, the thickness of an optical matching layer 199G is similarly preferably adjusted such that the optical path length between a pair of electrodes is such that green light is amplified. In the light-emitting device 47R, which emits red light, the thickness of an optical matching layer 199R is also preferably adjusted such that the optical path length between a pair of electrodes is such that red light is amplified.In the light-emitting device 47N, which emits infrared light, the thickness of an optical matching layer 199N is preferably adjusted such that the optical path length between a pair of electrodes is such that infrared light is amplified. It should be noted that in the case where the semi-transparent and semi-reflective electrode has a multilayer structure consisting of a reflective electrode and an electrode with a transmittance property for visible and infrared light (also referred to as a transparent electrode), the optical path length between a pair of electrodes is referred to as the optical path length between a pair of reflective electrodes. The light-emitting device of an embodiment of the present invention may also include a light-emitting device without an optical matching layer.For example, the optical path length between a pair of electrodes can be such an optical path length that light of a certain wavelength is amplified in a state without an optical matching layer.

[0083] In particular, the optical path length between the pixel electrode 191 and the common electrode 115 is preferably set to nλ / 2 (n is a natural number) or a value close to it with respect to a wavelength λ of light received from the light-emitting layer 193.

[0084] In this description and the like, the wavelength λ of light received from the light-emitting layer 193 can be the peak wavelength (in particular the maximum peak wavelength) of the light-emitting layer 193. In this description and the like, a value close to a wavelength X lies in a range within ± 20 nm of X, preferably in a range within ± 10 nm of X.

[0085] The light-emitting device can have a single structure, in which one light-emitting unit is provided between the pixel electrode 191 and the common electrode 115, or a tandem structure, in which a plurality of light-emitting units are provided in between.

[0086] A light-emitting device with a single structure is preferred because it increases productivity. A light-emitting device with a tandem structure is preferred because it offers advantages such as easier optimization of the optical path length, increased emission intensity, and the like.

[0087] Fig. 2A, Fig. 2B, Fig. 3A, Fig. 3B and Fig. Figures 4 each represent an example in which the light-emitting devices each have a single structure.

[0088] The light-emitting devices in Fig. 2A contains the same components except for the optical matching layer 199.

[0089] In particular, the light-emitting devices in Fig. 2A each above the substrate 151 the pixel electrode 191, the optical matching layer 199, a common layer 112, a light-emitting layer 193N, a light-emitting layer 193R, a light-emitting layer 193G, a light-emitting layer 193B, a common layer 114, the common electrode 115 and a buffer layer 116, wherein the layer 45 with transistors is arranged in between.

[0090] Light-emitting layer 193N contains a light-emitting material that emits infrared light. Light-emitting layer 193R contains a light-emitting material that emits red light. Light-emitting layer 193G contains a light-emitting material that emits green light. Light-emitting layer 193B contains a light-emitting material that emits blue light.

[0091] The light-emitting device 47B in Fig. 2A includes the optical matching layer 199B between the pixel electrode 191 and the common layer 112. In the light-emitting device 47B, the thickness of the optical matching layer 199B is adjusted such that the optical path length between a pair of electrodes is such that blue light is amplified. Therefore, blue light emitted by the light-emitting layer 193B can be extracted by the light-emitting device 47B.

[0092] The light-emitting device 47G in Fig. 2A also includes the optical matching layer 199G between the pixel electrode 191 and the common layer 112. In the light-emitting device 47G, the thickness of the optical matching layer 199G is adjusted such that the optical path length between a pair of electrodes is such that green light is amplified. Therefore, green light emitted by the light-emitting layer 193G can be extracted by the light-emitting device 47G.

[0093] The light-emitting device 47R in Fig. 2A also includes the optical matching layer 199R between the pixel electrode 191 and the common layer 112. In the light-emitting device 47R, the thickness of the optical matching layer 199R is adjusted such that the optical path length between a pair of electrodes is such that red light is amplified. Therefore, red light emitted by the light-emitting layer 193R can be extracted by the light-emitting device 47R.

[0094] The light-emitting device 47N in Fig. 2A also includes the optical matching layer 199N between the pixel electrode 191 and the common layer 112. In the light-emitting device 47N, the thickness of the optical matching layer 199N is adjusted such that the optical path length between a pair of electrodes is such that infrared light is amplified. Therefore, infrared light emitted by the light-emitting layer 193N can be extracted by the light-emitting device 47N.

[0095] In addition to the light-emitting layer 193, the light-emitting unit may further include one or more layers containing any of the following substances: a substance with a high hole injection property, a substance with a high hole transport property, a hole-blocking material, a substance with a high electron transport property, a substance with a high electron injection property, a substance with a bipolar property (a substance with a high electron and hole transport property), and the like.

[0096] For example, the common layer 112, which is provided between the pixel electrode 191 and the light-emitting layer 193, preferably comprises a hole injection layer and / or a hole transport layer. For example, the common layer 114, which is provided between the light-emitting layer 193 and the common electrode 115, preferably comprises an electron transport layer and / or an electron injection layer. The common layer 112 and the common layer 114 can each have a single-layer or a multi-layer structure.

[0097] The light-emitting devices in Fig. Layer 2A each contains the light-emitting layer 193N above the common layer 112, the light-emitting layer 193R above the light-emitting layer 193N, the light-emitting layer 193G above the light-emitting layer 193R, the light-emitting layer 193B above the light-emitting layer 193G, and the common layer 114 above the light-emitting layer 193B. That is, starting from the side of the optical matching layer 199, the light-emitting layer 193N, the light-emitting layer 193R, the light-emitting layer 193G, and the light-emitting layer 193B are arranged in this order.

[0098] The light-emitting devices in Fig. 2B differ from the light-emitting devices in Fig. 2A by the fact that, starting from the side of the optical matching layer 199, the light-emitting layer 193B, the light-emitting layer 193G, the light-emitting layer 193R and the light-emitting layer 193N are arranged in that order. In particular, the light-emitting devices in Fig. 2B each the light-emitting layer 193B above the common layer 112, the light-emitting layer 193G above the light-emitting layer 193B, the light-emitting layer 193R above the light-emitting layer 193G, the light-emitting layer 193N above the light-emitting layer 193R and the common layer 114 above the light-emitting layer 193N.

[0099] Now, a preferred arrangement of the light-emitting layers is determined based on Fig. 5 described. In particular, a preferred arrangement of the light-emitting layers in a light-emitting unit is described.

[0100] The microcavity structure allows light with a wavelength of, for example, 1000 nm, to be amplified and then extracted. This wavelength is obtained by dividing a multiple of the optical path length between a pair of electrodes (including any phase shift caused by reflection) by an integer. For example, if this optical path length is 500 nm, light with a wavelength of, for example, (500 × 2 / 1 =) 1000 nm, (500 × 2 / 2 =) 500 nm, (500 × 2 / 3 =) 333 nm, or (500 × 2 / 4 =) 250 nm can be amplified and then extracted. Alternatively, if this optical path length is 500 nm, light with a wavelength of, for example, 1000 nm can be amplified and then extracted. B. (500 × 3 / 1 =) 1500 nm, (500 × 3 / 2 =) 750 nm, (500 × 3 / 3 =) 500 nm or (500 × 3 / 4 =) 375 nm can be amplified and then extracted.

[0101] To increase the light extraction efficiency of the light-emitting device, not only the optical path length between a pair of electrodes is crucial, but also the optical path length between a region from which desired light is obtained (a light-emitting region), the light-emitting layer 193, and an electrode where reflection occurs. In particular, if the optical path length between the pixel electrode 191 and the light-emitting region is set to (2m'+1)λ / 4 or a value close to it, and the optical path length between the common electrode 115 and the light-emitting region is set to (2M+1)λ / 4 or a value close to it (m' and M are each 0 or a natural number, where n = m'+M+1), light can be extracted efficiently. Here, the light-emitting region denotes a region in the light-emitting layer where holes and electrons recombine.

[0102] Therefore, preferred values ​​of the optical path length between a pair of electrodes, the optical path length between the pixel electrode 191 and the light-emitting area, and the optical path length between the common electrode 115 and the light-emitting area vary depending on the wavelength of light being extracted.

[0103] When a specific metal film (e.g., a metal film containing a precious metal such as silver) is used as a reflective electrode, the light extraction efficiency is sometimes reduced by the influence of surface plasmon resonance (SPR). This occurs because light with a plasmon oscillation inherent to the metal resonates at or near a surface of the metal film, preventing the extraction of light with a wavelength corresponding to the resonant frequency. This phenomenon is more likely to occur when the optical path length from the reflective electrode to the light-emitting area of ​​the light-emitting layer is shorter. Furthermore, this phenomenon is highly likely to occur with a light-emitting device that emits blue light.

[0104] In the light-emitting device with a top-emission structure, the optical path length from the pixel electrode 191 to the light-emitting region of the light-emitting layer 193B is therefore preferably set to (2m'+1)λ / 4 (m' is a natural number) or a value close to it. Since the optical path length from the pixel electrode 191 (the reflecting electrode) to the light-emitting region of the blue light-emitting layer 193B can be longer, the influence of surface plasmon resonance can be reduced, and the light extraction efficiency can be increased.

[0105] In contrast, in the light-emitting device with a bottom-emission structure, a reflective electrode is used as the common electrode 115. Therefore, in the light-emitting device with a bottom-emission structure, the optical path length from the common electrode 115 to the light-emitting region of the light-emitting layer 193B is preferably set to (2M + 1)λ / 4 (M is a natural number) or a value close to it.

[0106] In a light-emitting device with a single structure, all light-emitting layers are preferably arranged close together to maximize emission efficiency. In a light-emitting device with a tandem structure, light-emitting units are provided separately, allowing for a large number of light-emitting layers to be arranged at a distance from one another. This makes it easier to optimize the optical path length compared to a light-emitting device with a single structure. The arrangement of the light-emitting units is not particularly restricted in a light-emitting device with a tandem structure.However, in the case where a light-emitting device with a tandem structure has a light-emitting unit with a plurality of light-emitting layers, it is required that these light-emitting layers be arranged close to each other in terms of emission efficiency, as in the light-emitting device with a single structure.

[0107] Based on Fig. Section 5 describes the case in which secondary light (n = 2) of visible light λv is extracted from the light-emitting device 47V, which emits visible light, and secondary light (n = 2) of infrared light λi is extracted from the light-emitting device 47N, which emits infrared light.

[0108] The optical path length between a pair of electrodes of the light-emitting device 47V in Fig. 5 is λv (i.e., nλv / 2 and n = 2). Furthermore, the optical path length between the pixel electrode 191 and a light-emitting region EM(V) of visible light is 3λv / 4, and the optical path length between the common electrode 115 and the light-emitting region EM(V) of visible light is λv / 4.

[0109] Similarly, the optical path length between a pair of electrodes of the light-emitting device 47N is Fig. 5 λi. Furthermore, the optical path length between the pixel electrode 191 and a light-emitting region EM(IR) of infrared light is 3λi / 4, and the optical path length between the common electrode 115 and the light-emitting region EM(IR) of infrared light is λi / 4.

[0110] The optical path length between the pixel electrode 191 and the light-emitting area EM can be adjusted by the thickness of the optical matching layer 199. If the same n-fold light (here, the secondary light) is extracted and the wavelength of the light is longer, the optical path length between the pixel electrode 191 and the light-emitting area EM is longer. Therefore, it is preferred that the thickness of the optical matching layer 199 be increased when the light-emitting device emits light with a longer wavelength. That is, the thickness of the optical matching layer 199N of the light-emitting device that emits infrared light is preferably greater than that of an optical matching layer 199V of the light-emitting device that emits visible light.

[0111] Since no optical matching layer is provided between the light-emitting layer and the common electrode 115, the optical path length between the common electrode 115 and the light-emitting region EM of each light-emitting device is preferably adapted depending on the arrangement order of the light-emitting layers. If the same n-fold light (here, the secondary light) is extracted and the wavelength of the light is longer, the optical path length between the common electrode 115 and the light-emitting region EM is longer. Therefore, the light-emitting layer that emits light with a longer wavelength is preferably positioned further away from the common electrode 115, i.e., closer to the optical matching layer 199.

[0112] From this the structure ( Fig. 2A), in which the light-emitting layers are arranged in descending order of wavelength of light from the side of the optical matching layer 199, in front of the structure ( Fig. 2B) preferably, wherein the light-emitting layers are arranged in ascending order of wavelength of light, starting from the side of the optical matching layer 199. In this way, in each light-emitting device, the optical path length between a pair of electrodes, the optical path length between the pixel electrode 191 and the light-emitting area, and the optical path length between the common electrode 115 and the light-emitting area can be set to preferred values, thereby enabling efficient extraction of light of any wavelength.

[0113] It is also assumed that the optical matching layer is arranged in a position both between the light-emitting layer and the pixel electrode 191 and in a position between the light-emitting layer and the common electrode 115; however, this increases the number of manufacturing steps for the light-emitting device. Therefore, it is preferable to arrange the optical matching layer in one of the aforementioned positions. By arranging the light-emitting layers in descending order of wavelength of light, starting from the side near the optical matching layer, the optical path length between the other electrode and the light-emitting area can be adjusted to a suitable value.

[0114] Such optical adjustment allows the spectrum of specific monochromatic light obtained from the light-emitting layer 193 to be narrowed, resulting in light emission with high color purity. Furthermore, it prevents a reduction in the light extraction efficiency of the light-emitting device, thereby reducing its power consumption.

[0115] It should be noted that, strictly speaking, the optical path length between the pixel electrode 191 and the common electrode 115 is represented by a value obtained by adding a phase shift caused by reflection to the product of the refractive index and the distance from a reflecting surface of the pixel electrode 191 to a reflecting surface of the common electrode 115. However, it is difficult to precisely determine the reflecting surfaces of the pixel electrode 191 and the common electrode 115, as well as the phase shift. Therefore, it is assumed that the effect described above can be sufficiently obtained if given positions in the pixel electrode 191 and the common electrode 115 are assumed to be the reflecting surfaces and a given phase shift is set.

[0116] Strictly speaking, the optical path length between the pixel electrode 191 and the light-emitting region is also represented by a value obtained by adding a phase shift caused by reflection to the product of the refractive index and the distance from the reflecting surface of the pixel electrode 191 to the light-emitting region of the light-emitting layer. However, it is difficult to precisely determine the reflecting surface of the pixel electrode 191, the phase shift within it, and the light-emitting region of the light-emitting layer. Therefore, it is assumed that the effect described above can be sufficiently achieved if a given position within the pixel electrode 191 is assumed to be the reflecting surface, a given phase shift is set, and a given position within the light-emitting layer is assumed to be the light-emitting region.

[0117] For example, it can be assumed that the light-emitting area of ​​the light-emitting layer 193 is located on the surface facing the pixel electrode 191, on the surface facing the common electrode 115, or in the center of the light-emitting layer 193.

[0118] As a specific example, in Fig. Figure 5 shows an estimated optical path length in the case where secondary light (n = 2) of visible light λv (λv = 467 nm, blue light) is extracted from the light-emitting device 47V and secondary light (n = 2) of infrared light λi (λi = 800 nm) is extracted from the light-emitting device 47N.

[0119] It can be estimated that the optical path length between the pixel electrode 191 and the light-emitting area EM(V) for visible light is approximately 350 mm, and the optical path length between the pixel electrode 191 and the light-emitting area EM(IR) for infrared light is approximately 600 nm. Therefore, the thickness of the optical matching layer 199N is preferably greater than that of the optical matching layer 199V.

[0120] It can be estimated that the optical path length between the common electrode 115 and the visible light-emitting region EM(V) is approximately 117 nm, and the optical path length between the common electrode 115 and the infrared light-emitting region EM(IR) is approximately 200 nm. Therefore, the infrared light-emitting layer is preferably positioned further away from the common electrode 115 than the visible light-emitting layer (blue light in this specific example), i.e., closer to the optical matching layer 199.

[0121] In the specific example above, blue light (λv = 467 nm) emitted by the light-emitting layer 193V is extracted in the direction of the common electrode 115 in the light-emitting device 47V. Therefore, the optical path length from the pixel electrode 191 (the reflecting electrode) to the light-emitting area of ​​the light-emitting layer 193V can be long by setting the optical path length from the pixel electrode 191 to the light-emitting area of ​​the light-emitting layer 193V to 3λv / 4 (i.e., (2m'+1)λ / 4 and m' = 1), or a value close to it, as described above. In this way, the influence of surface plasmon resonance can be suppressed, which can increase the blue light extraction efficiency.

[0122] The optical matching layer 199 can be appropriately arranged between the pixel electrode 191 and the common electrode 115 (between a pair of reflective electrodes in the case where a semitransparent and semireflective electrode has a multilayer structure consisting of a reflective electrode and a transparent electrode).

[0123] An optical matching layer 199 can be a conductive film that transmits visible light and infrared light.

[0124] A conductive material that transmits visible and infrared light can be, for example, a material containing one or more elements selected from indium (In), zinc (Zn), and tin (Sn). Specifically, indium oxide, indium tin oxide (ITO), indium zinc oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide containing silicon oxide (ITSO), zinc oxide, zinc oxide containing gallium, or the like can be used. It should be noted that a graphene-containing film can also be used. The graphene-containing film can be formed, for example, by reducing a graphene oxide-containing film.

[0125] A conductive film that transmits visible and infrared light can be formed using an oxide semiconductor (hereinafter also referred to as the oxide conductive layer). The oxide conductive layer preferably contains, for example, indium, more preferably an In-M-Zn oxide (M being Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf).

[0126] An oxide semiconductor is a semiconductor material whose resistance can be controlled by oxygen defects in the film and / or the concentration of impurities, such as hydrogen or water, in the film. Accordingly, the treatment to be performed on the oxide semiconductor layer is selected from the following to control the specific resistance of the oxide semiconductor layer: a treatment to increase the number of oxygen defects and / or the impurity concentration, and a treatment to decrease the number of oxygen defects and / or the impurity concentration.

[0127] An oxide conductor layer formed as above using an oxide semiconductor can be referred to as a high charge carrier density, low resistance oxide semiconductor layer, conductive oxide semiconductor layer, or high conductivity oxide semiconductor layer.

[0128] Alternatively, the optical matching layer 199 can further comprise one or more layers containing a substance with high hole injection properties, a substance with high hole transport properties, a hole-blocking material, a substance with high electron transport properties, a substance with high electron injection properties, a substance with bipolar properties (a substance with high electron and hole transport properties), and the like. In particular, the optical matching layer 199 can also serve as a hole injection layer, hole transport layer, electron transport layer, or electron injection layer.

[0129] As an optical adaptation layer 199, which is in Fig. 2A and Fig. As shown in 2B, a conductive film that transmits visible and infrared light can be used. A hole injection layer and / or a hole transport layer can be used as the common layer 112. The optical matching layer 199, which is shown in Fig. 2A and Fig. The layer shown in 2B can alternatively include a hole injection layer and the common layer 112 can include a hole transport layer.

[0130] Fig. Figure 3A presents an example where the optical matching layer 199 is provided between the common layer 112 and the light-emitting layer 193N. For example, a hole injection layer can be used as the common layer 112, and a hole transport layer can be used as the optical matching layer 199. Alternatively, a hole injection layer and / or a hole transport layer can be used as the optical matching layer 199 without providing the common layer 112.

[0131] Fig. Figure 3B presents an example in which the optical matching layer 199 is provided between the common layer 114 and the common electrode 115. For example, an electron transport layer can be used as the common layer 114, and an electron injection layer can be used as the optical matching layer 199. Alternatively, an electron injection layer and / or an electron transport layer can be used as the optical matching layer 199 without providing the common layer 114.

[0132] Fig. Figure 4 represents an example of a light-emitting device with a bottom-emission structure, in which the light-emitting device emits light in the direction of the substrate 151. Fig. In section 4, a reflective electrode is used as the pixel electrode 191, and a transparent electrode is used as the optical matching layer 199. The pixel electrode 191 and the optical matching layer 199 can form a semi-transparent and semi-reflective electrode. Alternatively, a semi-transparent and semi-reflective electrode can be used as the pixel electrode 191, and a hole injection layer and / or a hole transport layer can be used as the optical matching layer 199.

[0133] The light-emitting device, which is in Fig. 2A and Fig. Figure 2B shows the buffer layer 116 above the common electrode 115. Examples of the buffer layer 116 include an organic film, a semiconductor film, and an inorganic insulating film. In the Fig. 2A and Fig. In the light-emitting device shown in Figure 2B, light emissions from the light-emitting devices are extracted towards the buffer layer 116, and the buffer layer 116 therefore preferably has a transmittance function for visible and infrared light. This prevents the buffer layer 116 from absorbing light and increases the light extraction efficiency of the light-emitting devices. The organic film used can be a layer containing a substance with high hole injection properties, a substance with high hole transport properties, a hole-blocking material, a substance with high electron transport properties, a substance with high electron injection properties, a substance with bipolar properties, or the like, and can be used for the light-emitting devices.A semiconductor film that transmits visible and infrared light can be used as the semiconductor film. A silicon nitride film or the like can be used as the inorganic insulating film. The buffer layer 116 preferably has a passivation function. This prevents impurities, such as moisture, from penetrating the light-emitting devices. If the common electrode 115 has a function for reflecting visible and infrared light, the presence of the buffer layer 116 can reduce the optical energy loss due to a surface plasmon at the common electrode 115. [Structure of the light-emitting device (tandem structure)]

[0134] The structures of the light-emitting devices in the light-emitting apparatus of an embodiment of the present invention are described below with reference to Fig. 6 described.

[0135] Fig. 6A to Fig. 6D each represent an example of a multilayer structure consisting of a multitude of light-emitting units in the light-emitting device with a tandem structure.

[0136] Fig. 6A and Fig. 6B each represent an example in which a light-emitting unit 48a and a light-emitting unit 48b are arranged one above the other, with an intermediate layer 198 in between.

[0137] Fig. 6C provides an example in which a light-emitting unit 48c and a light-emitting unit 48d are arranged one above the other, with an intermediate layer 198a between them, and the light-emitting unit 48d and a light-emitting unit 48e are arranged one above the other, with an intermediate layer 198b between them.

[0138] Fig. 6D represents an example in which the light-emitting unit 48e and the light-emitting unit 48c are arranged one above the other, with the intermediate layer 198a in between, and the light-emitting unit 48c and the light-emitting unit 48d are arranged one above the other, with the intermediate layer 198b in between.

[0139] Intermediate layers 198, 198a, and 198b each comprise at least one charge-generating layer. The charge-generating layer is arranged between two light-emitting units. The charge-generating layer functions such that, when a voltage is applied between a pair of electrodes, it injects electrons into one of the adjacent light-emitting units and holes into the other light-emitting unit. Intermediate layers 198, 198a, and 198b may further comprise a layer containing a substance with high hole injection properties, a substance with high hole transport properties, a hole-blocking material, a substance with high electron transport properties, a substance with high electron injection properties, a substance with bipolar properties, or the like.

[0140] In a single-layer structure, where multiple light-emitting layers are provided within a single light-emitting unit, excitons are shared among these layers, potentially reducing the emission intensity of each layer. Conversely, by providing multiple light-emitting layers separately within multiple light-emitting units, the emission intensity of each layer can be increased. The fewer the number of light-emitting units, the fewer the number of layers in the light-emitting device, thus preventing a reduction in productivity. Therefore, the number of light-emitting units is preferably greater than or equal to 1 and less than or equal to 3, with 1 or 2 being more preferred.

[0141] Fig. 6A to Fig. 6D each represent an example of the layer arrangement of the light-emitting layers 193 in the case where a fluorescent material is used as the blue light-emitting material and phosphorescent materials are used as infrared, red and green light-emitting materials.

[0142] It is preferable to provide separate light-emitting units for light-emitting layers using a fluorescent material and separate light-emitting units for light-emitting layers using a phosphorescent material. This allows the emission intensity of the light-emitting layer using a fluorescent material to be increased.

[0143] In Fig. 6A and Fig. In 6B, light-emitting unit 48a is a fluorescent light-emitting unit and light-emitting unit 48b is a phosphorescent light-emitting unit. The arrangement order of the fluorescent and phosphorescent light-emitting units is not particularly restricted. Fig. Figure 6A represents an example in which the light-emitting unit 48a (fluorescent light-emitting unit) is positioned on the side of the optical matching layer 199, and Fig. Figure 6B represents an example in which the light-emitting unit 48b (phosphorescent light-emitting unit) is positioned on the side of the optical matching layer 199.

[0144] The light-emitting unit 48b (phosphorescent light-emitting unit) comprises the light-emitting layer 193N, which emits infrared light, the light-emitting layer 193R, which emits red light, and the light-emitting layer 193G, which emits green light. It is preferred that these three light-emitting layers, as described above, are arranged in descending order of wavelength of light, starting from the side closest to the optical matching layer 199. Therefore, in the light-emitting unit 48b, the light-emitting layer closest to the optical matching layer 199 is preferably the light-emitting layer 193N, which emits infrared light, and the farthest light-emitting layer is preferably the light-emitting layer 193G, which emits green light. In this way, infrared light, red light, and green light can each be efficiently extracted.

[0145] It is also preferable to provide separate light-emitting units for a light-emitting layer that emits infrared light and separate light-emitting units for a light-emitting layer that emits visible light. For example, if the emission intensity of the light-emitting layer that emits infrared light is lower than the emission intensity of the light-emitting layer that emits visible light, the emission intensity of infrared light can be increased by providing the light-emitting units separately.

[0146] In Fig. 6C and Fig. 6D is light-emitting unit 48c, a fluorescent light-emitting unit for visible light; light-emitting unit 48d, a phosphorescent light-emitting unit for visible light; and light-emitting unit 48e, a phosphorescent light-emitting unit for infrared light. The order in which the three light-emitting units are arranged is not particularly restricted. Fig. 6C represents an example in which the light-emitting unit 48c (fluorescent light-emitting unit) is located closest to the optical matching layer 199 and the light-emitting unit 48e (phosphorescent light-emitting unit for infrared light) is located furthest from the optical matching layer 199. Fig. 6D represents an example in which the light-emitting unit 48e (phosphorescent light-emitting unit for infrared light) is closest to the optical matching layer 199 and the light-emitting unit 48d (phosphorescent light-emitting unit for visible light) is furthest from the optical matching layer 199.

[0147] The light-emitting unit 48d (phosphorescent light-emitting unit for visible light) comprises the light-emitting layer 193R, which emits red light, and the light-emitting layer 193G, which emits green light. It is preferred that these two light-emitting layers, as described above, are arranged sideways near the optical matching layer 199 in descending order of wavelength. Therefore, in the light-emitting unit 48d, the red-emitting layer 193R is located closer to the optical matching layer 199 than the green-emitting layer 193G. In this way, red light and green light can each be extracted efficiently.

[0148] The light-emitting device, which is in Fig. Figure 6E includes, above the substrate 151, the light-emitting device 47B, which emits blue (B) light, the light-emitting device 47G, which emits green (G) light, the light-emitting device 47R, which emits red (R) light, and the light-emitting device 47N, which emits infrared (IR) light, wherein the layer 45 with transistors is arranged in between.

[0149] Fig. 6E is an example where the multilayer structure of the light-emitting units in Fig. 6A is used.

[0150] In particular, the light-emitting devices in Fig. 6E each above the substrate 151 the pixel electrode 191, the optical matching layer 199, the common layer 112, the light-emitting layer 193B, the intermediate layer 198, the light-emitting layer 193N, the light-emitting layer 193R, the light-emitting layer 193G, the common layer 114, the common electrode 115 and the buffer layer 116, wherein the layer 45 with transistors is arranged in between.

[0151] By providing a blue light-emitting layer and light-emitting layers of other colors in separate light-emitting units, the emission intensity of each light-emitting layer can be increased, and the emission efficiency can be improved, even when a fluorescent material is used only for the blue light-emitting layer. Furthermore, by arranging the light-emitting layers in a single light-emitting unit in descending order of wavelength, starting from the side of the optical matching layer 199, the optical matching process using the optical matching layers 199N, 199R, and 199G can be simplified, allowing red light, green light, and infrared light to be extracted with high efficiency, respectively. [Modification example]

[0152] In the light-emitting device of an embodiment of the present invention, a subpixel can emit both visible and infrared light. For example, one of three subpixels emitting red, green, and blue light, respectively, can emit infrared light. If a visible-light-emitting subpixel also serves as an infrared-emitting subpixel, it is unnecessary to provide a separate infrared-emitting subpixel. Therefore, the light-emitting device can emit both visible and infrared light without increasing the number of subpixels contained within a single pixel. Consequently, a reduction in the pixel's aperture ratio can be avoided, and thus the emission efficiency of the light-emitting device can be increased.

[0153] Fig. 7A to Fig. Figures 7C are each a cross-sectional view of the light-emitting device of an embodiment of the present invention.

[0154] For light-emitting devices 40C to 40E in Fig. 7A to Fig. 7C emits red (R-) light, green (G-) light, blue (B-) light and infrared (IR) light.

[0155] Each of the light-emitting devices 40C to 40E may have a light-emitting device that emits one of red light, green light and blue light, also emit infrared light.

[0156] The light-emitting devices 40C to 40E in Fig. 7A to Fig. 7C each include layer 45 with transistors, light-emitting device 47R, light-emitting device 47G and light-emitting device 47B between substrate 151 and substrate 152.

[0157] In the light-emitting device 40C, the light-emitting device 47R can emit both red (R-) light and infrared (IR) light, the light-emitting device 47G can emit green (G-) light, and the light-emitting device 47B can emit blue (B-) light.

[0158] In the light-emitting device 40D, the light-emitting device 47G can emit both green (G-) light and infrared (IR) light, the light-emitting device 47R can emit red (R-) light, and the light-emitting device 47B can emit blue (B-) light.

[0159] In the light-emitting device 40E, the light-emitting device 47B can emit both blue (B) light and infrared (IR) light, the light-emitting device 47R can emit red (R) light, and the light-emitting device 47G can emit green (G) light.

[0160] Fig. 7D to Fig. Each of the 7H represents a structural example of a pixel.

[0161] The pixels that are in Fig. 7D to Fig. The 7F images shown each contain three subpixels of red (R), green (G), and blue (B) (three light-emitting devices). In the light-emitting device of one embodiment of the present invention, at least one of the subpixels contained in the pixel emits infrared light in addition to visible light.

[0162] Fig. 7D represents a structure in which the subpixel emits red (R) infrared light (IR), Fig. 7E represents a structure in which the subpixel of green (G) emits infrared light (IR), and Fig. 7F represents a structure in which the subpixel of blue (B) emits infrared light (IR).

[0163] The pixels that are in Fig. 7G and Fig. 7H are represented, each containing four subpixels of red (R), green (G), blue (B) and white (W) (four light-emitting devices). Fig. 7G and Fig. 7H each represent a structure in which the subpixel of red (R) emits infrared light (IR), but without being limited to this, a subpixel of another color can also emit infrared light. Fig. 7G provides an example in which four subpixels are arranged side by side in a transverse direction, and Fig. 7H represents an example in which four subpixels are arranged in a 2 × 2 matrix.

[0164] The microcavity structure allows, as described above, light with a wavelength that has a value obtained by dividing a multiple of the optical path length between a pair of electrodes (including a phase shift caused by reflection) by an integer. Therefore, when an optical path length that is a common multiple of the wavelengths of visible and infrared light is used, both visible and infrared light can be efficiently extracted.

[0165] Several standards are established as quality indicators for full-color displays. For example, the sRGB standard is widely used. It is an international standard for color spaces and was defined by the International Electrotechnical Commission (IEC) to standardize color reproduction in various devices, such as displays, printers, digital cameras, and scanners. Other standards include the NTSC standard, a color scale standard for analog television systems defined by the National Television Systems Committee (NTSC) in America; the DCI-P3 standard (defined by Digital Cinema Initiatives, LLC), the international unified standard used in the distribution of digital films (cinema); and ITU-R Recommendation BT.2020 (hereinafter referred to as BT.).The wavelengths specified are those defined as 2020 for Ultra-High-Definition Television (UHDTV, also known as Super Hi-Vision), which is the standard defined by the Japan Broadcasting Corporation (NHK). Since the R, G, and B wavelengths are defined by such standard values, the wavelengths of infrared light that can be extracted along with visible light are limited.

[0166] Table 1 shows, by way of example, the wavelengths of light corresponding to R, G, and B as defined by BT.2020, as well as those of n times that light (n being a natural number). Table 1 also shows, in parentheses, the wavelengths of infrared light that can be extracted by applying n times that light of R, G, and B. [Table 1] n 1 2 3 4 R 630 nm 1260 nm(1260 nm) 1890 nm(945 nm) 2520 nm(840 nm) G 532 nm 1064 nm(1064 nm) 1596 nm(798 nm) 2128 nm(709 nm) B 467 nm 934 nm(934 nm) 1401 nm(700 nm) 1868 nm(934 nm)

[0167] According to Table 1, the wavelength of infrared light that can be amplified and then extracted in the microcavity structure together with light of color R, G, or B as defined by BT.2020 can be estimated. It should be noted that if n is too large, the light extraction efficiency decreases; therefore, n is preferably greater than or equal to 1 and less than or equal to 4. Thus, infrared light that can be amplified and then extracted together with R, G, or B light has, for example, a wavelength of 934 nm, 1064 nm, or 1260 nm, corresponding to the wavelengths of R, G, or B at n = 2; a wavelength of 798 nm or 945 nm, obtained by dividing the wavelength of R or G at n = 3 by 2; or a wavelength of 840 nm, or the like, obtained by dividing the wavelength of R at n = 4 by 3.

[0168] Therefore, it is preferable to determine, in an appropriate manner according to the wavelength of infrared light to be extracted, the n-fold light of which color is to be applied. Thus, in the light-emitting device that emits both visible and infrared light, the thickness of the optical matching layer is preferably adjusted such that an optical path length is selected at which both visible (red, green, or blue) light and infrared light are amplified.

[0169] A light-emitting device located in Fig. Figure 8A includes above the substrate 151 the light-emitting device 47R, which emits red (R-) light, the light-emitting device 47G, which emits green (G-) light, and the light-emitting device 47B(IR), which emits blue (B-) light and infrared light, with the layer 45 with transistors arranged in between.

[0170] In the light-emitting device in Fig. 8A emits the light-emitting device 47B(IR) blue light and infrared light.

[0171] The light-emitting devices in Fig. 8A exhibit the same structures of the respective light-emitting devices in Fig. 2A. In the light-emitting device 47B(IR), the thickness of the optical matching layer 199B is adjusted such that the optical path length between a pair of electrodes is such that blue light and infrared light can both be amplified, thereby enabling efficient extraction of blue light and infrared light.

[0172] The light-emitting device that emits light of R, G or B, and the light-emitting device 47N that emits infrared (IR) light, may have the same structure.

[0173] Fig. 8B provides an example in which the light-emitting device 47B, which emits blue (B) light, and the light-emitting device 47N, which emits infrared (IR) light, have the same structure.

[0174] The light-emitting device, which is in Fig. Figure 8B includes, above substrate 151, the light-emitting device 47R, which emits red (R-) light, the light-emitting device 47G, which emits green (G-) light, the light-emitting device 47B, which emits blue (B-) light, and the light-emitting device 47N, which emits infrared (IR) light, wherein layer 45 with transistors is arranged in between.

[0175] Light-emitting device 47R and light-emitting device 47N each have a structure in which blue light and infrared light are emitted. In light-emitting device 47B, infrared light is blocked by a filter 141a provided above the buffer layer 116, and only blue light is extracted. In light-emitting device 47N, blue light is blocked by a filter 141b provided above the buffer layer 116, and only infrared light is extracted.

[0176] As described above, the visible light-emitting device and the infrared light-emitting device both contain a number of common light-emitting layers. By using different thicknesses of the optical matching layers, the visible light-emitting device and the infrared light-emitting device can be manufactured separately. Therefore, an infrared-emitting subpixel can be provided without significantly increasing the number of manufacturing steps for the light-emitting device.

[0177] A structure of the light-emitting device of an embodiment of the present invention is described below with reference to Fig. 9 and Fig. 10. Among four light-emitting devices of infrared, red, green, and blue, the light-emitting device that emits infrared light and the light-emitting device that emits blue light are described below. The structure of the light-emitting devices that emit red and green light can be the same as that of the light-emitting device that emits infrared light and the light-emitting device that emits blue light, except for the thickness of the optical matching layer. [Light-emitting device 30A and light-emitting device 30B]

[0178] Fig. 9A is a cross-sectional view of the light-emitting device 30A, and Fig. 9B is a cross-sectional view of the light-emitting device 30B.

[0179] Light-emitting device 30A and light-emitting device 30B each include light-emitting device 190B and light-emitting device 190N, respectively. Light-emitting device 190B has a function for emitting blue light 21B. Light-emitting device 190N has a function for emitting infrared light 21N.

[0180] The light-emitting device 190B and the light-emitting device 190N each include the pixel electrode 191, the common layer 112, the light-emitting layer 193, the common layer 114 and the common electrode 115.

[0181] The light-emitting device 190B also includes the optical matching layer 199B between the pixel electrode 191 and the common layer 112. In the light-emitting device 190B, the thickness of the optical matching layer 199B is adjusted such that the optical path length between a pair of electrodes is such that blue light is amplified. Therefore, blue light can be extracted from the light-emitting device 190B.

[0182] The light-emitting device 190N also includes the optical matching layer 199N between the pixel electrode 191 and the common layer 112. In the light-emitting device 190N, the thickness of the optical matching layer 199N is adjusted such that the optical path length between a pair of electrodes is such that infrared light is amplified. Therefore, infrared light can be extracted from the light-emitting device 190N.

[0183] Visible light extracted from the light-emitting device is preferably extracted to the outside of the light-emitting device via an optical filter, such as a color layer (e.g., a color filter). Fig. Figure 9A presents an example in which light 21B is extracted from the light-emitting device 190B via a blue color layer CFB. Similarly, infrared light extracted from the light-emitting device can be extracted to the outside of the light-emitting device via an optical filter. The light-emitting device 30B in Fig. 9B is an example in which the infrared light 21N is extracted from the light-emitting device 190N via an optical filter IRF.

[0184] In Fig. In reference 9A and the like, a plurality of light-emitting layers is referred to as a single light-emitting layer 193. The light-emitting layer 193 comprises a light-emitting layer that emits infrared light and a light-emitting layer that emits visible light. The light-emitting layer 193 preferably comprises a plurality of light-emitting layers that emit visible light. A combination to obtain white light emission, such as three light-emitting layers of R, G, and B or three light-emitting layers of Y, C, and M, is preferred as the light-emitting layer that emits visible light.

[0185] Since the light-emitting device 190B and the light-emitting device 190N each have a single structure, it is preferable that, as described above, the plurality of light-emitting layers are arranged from the side of the optical matching layer 199 in descending order of the wavelength of light. That is to say, the light-emitting layer that is closest to the optical matching layer 199 is preferably a light-emitting layer that emits infrared light.

[0186] The pixel electrode 191, the optical matching layer 199, the common layer 112, the light-emitting layer 193, the common layer 114 and the common electrode 115 can each have a single-layer structure or a multi-layer structure.

[0187] The pixel electrode 191 is positioned above an insulating layer 214. The pixel electrodes 191 of the respective light-emitting devices can be formed using the same material in the same step.

[0188] For example, a hole injection layer and / or a hole transport layer can be formed as a common layer 112.

[0189] For example, an electron injection layer and / or an electron transport layer can be formed as a common layer 114.

[0190] The common electrode 115 partially overlaps the pixel electrode 191, with the optical matching layer 199B, the common layer 112, the light-emitting layer 193, and the common layer 114 positioned between them. The common electrode 115 also partially overlaps the pixel electrode 191, with the optical matching layer 199N, the common layer 112, the light-emitting layer 193, and the common layer 114 positioned between them. The common electrode 115 is a layer shared by the light-emitting device 190B and the light-emitting device 190N.

[0191] The light-emitting device 30A and the light-emitting device 30B each include, between the pair of substrates (the substrate 151 and the substrate 152), the light-emitting device 190B, the light-emitting device 190N, transistors 42 and the like.

[0192] An opaque layer BM is provided over a surface of substrate 152 facing substrate 151. The opaque layer BM has openings in positions that overlap with the respective light-emitting devices.

[0193] The opaque layer BM can be a material that blocks light from the light-emitting device 190. The opaque layer BM preferably absorbs infrared light. For example, the opaque layer BM can be a black matrix made using a metallic material, a resin material containing a pigment (e.g., carbon black) or a dye, or the like. The opaque layer BM can have a multilayer structure consisting of a red color filter, a green color filter, and a blue color filter.

[0194] The common layer 112, the light-emitting layer 193 and the common layer 114, which are positioned in the light-emitting device 190 between the pixel electrode 191 and the common electrode 115, can also be referred to as the EL layer.

[0195] The pixel electrode 191 preferably has a function for reflecting visible and infrared light. An end section of the pixel electrode 191 is covered by a partition 216. The common electrode 115 has a function for transmitting visible and infrared light. The light-emitting device 190 is an electroluminescent device that emits light towards the substrate 152 (see light 21B and infrared light 21N) by applying a voltage between the pixel electrode 191 and the common electrode 115.

[0196] The pixel electrode 191 is electrically connected to a source or drain of the transistor 42 via an opening provided in the insulating layer 214. An end section of the pixel electrode 191 is covered by the partition 216. The transistor 42 has a function for controlling the drive of the light-emitting device 190.

[0197] The light-emitting device 190 is preferably covered with a protective layer 195. Fig. In section 9A, the protective layer 195 is provided over and in contact with the common electrode 115. The protective layer 195 prevents contaminants, such as water, from penetrating the light-emitting device 190, thus increasing its reliability. Furthermore, the protective layer 195 and the substrate 152 are bonded together with an adhesive layer 142. It should be noted that the protective layer 195 can encompass the buffer layer 116 or even serve as the buffer layer 116 itself. Alternatively, the protective layer 195 can be provided over the common electrode 115 with the buffer layer 116 positioned between them.

[0198] It should be noted that, as in Fig. As shown in Figure 9B, the protective layer is not necessarily provided over the light-emitting devices 190. Fig. 9B, the common electrode 115 and the substrate 152 are attached to each other using the adhesive layer 142. [Light-emitting device 30C]

[0199] Fig. 10A is a cross-sectional view of the light-emitting device 30C.

[0200] The light-emitting device 30C in Fig. 10A differs from the light-emitting device 30A in that it does not include the substrate 151 and the substrate 152, but instead includes a substrate 153, a substrate 154, an adhesive layer 155 and an insulating layer 212.

[0201] Substrate 153 and insulating layer 212 are joined together using adhesive layer 155. Substrate 154 and protective layer 195 are joined together using adhesive layer 142.

[0202] The light-emitting device 30C is manufactured by transferring the insulating layer 212, the transistor 42, the light-emitting device 190, and the like, formed on a fabrication substrate, onto the substrate 153. The substrate 153 and the substrate 154 are preferably flexible. Consequently, the flexibility of the light-emitting device 30C can be increased. For example, a resin is preferably used for the substrate 153 and the substrate 154.

[0203] For substrates 153 and 154, any of the following resins can be used, for example: polyester resins, such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), a polyacrylonitrile resin, an acrylic resin, a polyimide resin, a polymethyl methacrylate resin, a polycarbonate (PC) resin, a polyethersulfone (PES) resin, polyamide resins (e.g., nylon and aramid), a polysiloxane resin, a cycloolefin resin, a polystyrene resin, a polyamide-imide resin, a polyurethane resin, a polyvinyl chloride resin, a polyvinylidene chloride resin, a polypropylene resin, a polytetrafluoroethylene (PTFE) resin, an ABS resin, and cellulose nanofiber. For substrate 153 and / or substrate 154, glass of a thickness sufficient to allow the substrate to exhibit flexibility can be used.

[0204] For the substrates of the light-emitting device of this embodiment, a highly optically isotropic film can be used. Examples of highly optically isotropic films include a triacetylcellulose (TAC, also known as cellulose triacetate) film, a cycloolefin polymer (COP) film, a cycloolefin copolymer (COC) film, and an acrylic film. [Light Emitting Device 30D]

[0205] Fig. Figure 10B is a cross-sectional view of the light-emitting device 30D.

[0206] Light-emitting device 30D differs from light-emitting device 30A in that it includes the intermediate layer 198 between light-emitting layer 193B and light-emitting layers 193N, 193R, and 193G. This means that light-emitting device 190 in light-emitting device 30A has a single structure, while light-emitting device 190 in light-emitting device 30D has a tandem structure.

[0207] The light-emitting device with a tandem structure is preferred because it offers advantages such as easy optimization of the optical path length, increased emission intensity, and the like.

[0208] A detailed structure of the light-emitting device of an embodiment of the present invention is described below with reference to Fig. 11 to Fig. 13 described. [Light-emitting device 200A]

[0209] Fig. Figure 11 is a perspective view of a light-emitting device 200A, and Fig. 12A is a cross-sectional view of the light-emitting device 200A.

[0210] In the light-emitting device 200A, substrate 152 and substrate 151 are attached to each other. Fig. In Figure 11, substrate 152 is represented by a dashed line.

[0211] The light-emitting device 200A includes a light-emitting section 163, a circuit 164, a line 165 and the like. Fig. Figure 11 presents an example in which the light-emitting device 200A is provided with an integrated circuit (IC) 173 and an FPC 172. Thus, the in Fig. The structure shown in Figure 11 can be considered a light-emitting module that includes the light-emitting device 200A, the IC and the FPC.

[0212] Circuit 164 can, for example, be used as a sampling line driver circuit.

[0213] Line 165 serves to supply a signal and current to the light-emitting section 163 and the circuit 164. The signal and current are input to line 165 externally via FPC 172 or IC 173.

[0214] Fig. Figure 11 presents an example in which the IC 173 is provided over substrate 151 by a chip-on-glass (COG) process, a chip-on-film (COF) process, or the like. For example, IC 173 can be an IC comprising a sampling line driver circuit, a signal line driver circuit, or the like. It should be noted that the light-emitting device 200A and the light-emitting module do not necessarily have to be provided with an IC. The IC can be provided over the FPC by a COF process or the like.

[0215] Fig. 12A represents an example of the cross-sections obtained by cutting a portion of an area containing FPC 172, a portion of an area containing circuit 164, a portion of an area containing light-emitting section 163, and a portion of an area containing an end section located in Fig. The 11 light-emitting device shown will be obtained with a capacity of 200A.

[0216] The light-emitting device 200A, which is in Fig. Figure 12A includes a transistor 201, a transistor 206, a transistor 207, the light-emitting device 190B, the light-emitting device 190N, the protective layer 195 and the like between the substrate 151 and the substrate 152.

[0217] Substrate 151 and substrate 152 are joined together using adhesive layer 142. Light-emitting device 190B and light-emitting device 190N can be sealed with a solid sealing structure, a hollow sealing structure, or the like. Fig. In 12A, a space 143 enclosed by the substrate 151, the adhesive layer 142, and the substrate 152 is filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure is applied. The adhesive layer 142 can also be provided such that it overlaps the light-emitting device 190. Alternatively, the space 143 enclosed by the substrate 151, the adhesive layer 142, and the substrate 152 can be filled with a resin different from that of the adhesive layer 142.

[0218] The light-emitting device 190B has a multilayer structure in which, starting from the insulating layer 214, the pixel electrode 191B, the optical matching layer 199B, the common layer 112, the light-emitting layer 193, the common layer 114, and the common electrode 115 are arranged one above the other in that order. The pixel electrode 191B is connected via an opening provided in the insulating layer 214 to a conductive layer 222b, which is contained in the transistor 206. The transistor 206 has a function for controlling the drive of the light-emitting device 190B.

[0219] The light-emitting device 190N has a multilayer structure in which, starting from the insulating layer 214, the pixel electrode 191N, the optical matching layer 199N, the common layer 112, the light-emitting layer 193, the common layer 114, and the common electrode 115 are arranged one above the other in that order. The pixel electrode 191N is connected via an opening provided in the insulating layer 214 to the conductive layer 222b, which is contained in the transistor 207. The transistor 207 has a function for controlling the drive of the light-emitting device 190N.

[0220] An end section of pixel electrode 191B and an end section of pixel electrode 191N are covered by the partition 216. Pixel electrode 191B and pixel electrode 191N each contain a material that reflects visible and infrared light, and the common electrode 115 contains a material that transmits visible and infrared light.

[0221] The optical matching layer 199B and the optical matching layer 199N are each preferably a conductive film that transmits visible light and infrared light.

[0222] In the light-emitting device 190B, the thickness of the optical matching layer 199B is adjusted such that the optical path length between a pair of electrodes is such that blue light is amplified. In the light-emitting device 190N, the thickness of the optical matching layer 199N is adjusted such that the optical path length between a pair of electrodes is such that infrared light is amplified.

[0223] In addition to the light-emitting layer 193, the light-emitting device 190 may further comprise one or more layers containing any of the following substances: a substance with high hole injection properties, a substance with high hole transport properties, a hole-blocking material, a substance with high electron transport properties, a substance with high electron injection properties, a substance with bipolar properties, and the like. For example, it is preferred that the common layer 112 comprises a hole injection layer and / or a hole transport layer. For example, it is preferred that the common layer 114 comprises an electron transport layer and / or an electron injection layer.

[0224] For the common layer 112, the light-emitting layer 193, and the common layer 114, either a low-molecular-weight compound or a high-molecular-weight compound may be used, and an inorganic compound may also be used. Each of the layers contained in the common layer 112, the light-emitting layer 193, and the common layer 114 may be formed by any of the following methods: an evaporation process (including a vacuum evaporation process), a transfer process, a printing process, an inkjet process, a coating process, and the like.

[0225] The light-emitting layer 193 can contain an inorganic compound, such as a quantum dot, as the light-emitting material.

[0226] Light is emitted from the light-emitting device 190 towards the substrate 152. The substrate 152 is preferably made of a material that transmits visible and infrared light to a high degree.

[0227] Pixel electrode 191B and pixel electrode 191N can be formed using the same material and the same fabrication step. Optical matching layer 199B and optical matching layer 199N can be formed using the same material but with different thicknesses. Common layer 112, common layer 114, and common electrode 115 are used for both light-receiving device 190B and light-receiving device 190N. Light-emitting device 190B and light-emitting device 190N can share at least some of the components, with the exception of optical matching layer 199. Therefore, light-emitting device 200A can have an infrared light-emitting function without significantly increasing the number of fabrication steps.

[0228] The light-emitting device 190 is covered with the protective layer 195. The protective layer 195 prevents contaminants, such as water, from penetrating the light-emitting device 190, thus increasing its reliability.

[0229] In a region 228 near the end section of the light-emitting device 200A, an insulating layer 215 and the protective layer 195 are preferably in contact with each other via an opening in the insulating layer 214. It is more preferred that an inorganic insulating film in the insulating layer 215 and an inorganic insulating film in the protective layer 195 are in contact with each other. This prevents contaminants from penetrating the light-emitting section 163 from the outside via an organic insulating film. Therefore, the reliability of the light-emitting device 200A can be increased.

[0230] Fig. 12B provides an example in which the protective layer 195 has a three-layer structure. In Fig. 12B the protective layer 195 comprises an inorganic insulating layer 195a over the common electrode 115, an organic insulating layer 195b over the inorganic insulating layer 195a and an inorganic insulating layer 195c over the organic insulating layer 195b.

[0231] An end section of the inorganic insulating layer 195a and an end section of the inorganic insulating layer 195c extend further outwards than an end section of the organic insulating layer 195b and are in contact with each other. Furthermore, the inorganic insulating layer 195a is in contact with the insulating layer 215 (the inorganic insulating layer) through an opening in the insulating layer 214 (the organic insulating layer). Thus, the light-emitting devices 190 can be enclosed by the insulating layer 215 and the protective layer 195, thereby increasing the reliability of the light-emitting devices 190.

[0232] The protective layer 195 can thus have a multilayered structure consisting of an organic insulating film and an inorganic insulating film. It is preferable that an end section of the inorganic insulating film extends towards the outside of an end section of the organic insulating film.

[0233] The opaque layer BM and the color layer CFB are provided over a surface of substrate 152 facing substrate 151. The opaque layer BM has an opening in a position that overlaps with the light-emitting device 190. The color layer CFB is provided in a position that overlaps with the light-emitting device 190B. Light emitted by the light-emitting device 190B is extracted via the color layer CFB to the outside of the light-emitting device 200A.

[0234] Transistor 201, transistor 206, and transistor 207 are all formed on substrate 151. These transistors can be formed using the same materials and the same fabrication steps.

[0235] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided above the substrate 151, in that order. A portion of the insulating layer 211 serves as the gate insulating layer of each transistor. A portion of the insulating layer 213 also serves as the gate insulating layer of each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and serve as a planarization layer. It should be noted that the number of gate insulating layers and the number of insulating layers covering the transistor are not limited and can be one, two, or more.

[0236] A material through which impurities, such as water and hydrogen, do not readily diffuse is preferably used for at least one of the insulating layers covering the transistors. This is because such an insulating layer can act as a barrier film. Such a structure can effectively suppress the diffusion of impurities from the outside into the transistors; thus, the reliability of the light-emitting device can be increased.

[0237] The insulating layer 211, the insulating layer 213, and the insulating layer 215 are each preferably an inorganic insulating film. For example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used as the inorganic insulating film. Alternatively, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like can be used. A layer arrangement comprising two or more of the aforementioned insulating films can also be used.

[0238] An organic insulating film typically exhibits a lower barrier property than an inorganic insulating film. Therefore, an organic insulating film preferably has an opening near the end section of the light-emitting device 200A. This prevents contaminants from penetrating from the end section of the light-emitting device 200A via the organic insulating film. Alternatively, an organic insulating film can be designed such that its end section is located further inward than the end section of the light-emitting device 200A, thus preventing the organic insulating film from being exposed to the end section of the light-emitting device 200A.

[0239] The insulating layer 214, which serves as a planarizing layer, is preferably an organic insulating film. Examples of a material that can be used for an organic insulating film include an acrylic resin, a polyimide resin, an epoxy resin, a polyamide resin, a polyimidamide resin, a siloxane resin, a benzocyclobutene-based resin, a phenolic resin, and precursors of these resins.

[0240] In an area 228, which is in Fig. As shown in Figure 12A, an opening is formed in the insulating layer 214. Therefore, even when an organic insulating film is used as the insulating layer 214, it is possible to prevent external contaminants from penetrating the light-emitting section 163 via the insulating layer 214. In this way, the reliability of the light-emitting device 200A can be increased.

[0241] Transistor 201, transistor 206, and transistor 207 each comprise a conductive layer 221, which serves as the gate; an insulating layer 211, which serves as the gate insulating layer; a conductive layer 222a and a conductive layer 222b, which serve as the source and drain, respectively; a semiconductor layer 231; an insulating layer 213, which serves as the gate insulating layer; and a conductive layer 223, which serves as the gate. Here, multiple layers obtained by processing the same conductive film are represented by the same hatching pattern. The insulating layer 211 is positioned between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is positioned between the conductive layer 223 and the semiconductor layer 231.

[0242] There is no particular restriction regarding the structure of the transistors included in the light-emitting device of this embodiment. For example, a planar transistor, a staggered transistor, or an inverted staggered transistor can be used. A top-gate transistor or a bottom-gate transistor can be used. Alternatively, gates can be provided above and below a semiconductor layer in which a channel is formed.

[0243] The structure, in which the semiconductor layer forming a channel is provided between two gates, is used for transistors 201, 206, and 207. The two gates can be connected together and supplied with the same signal to operate the transistor. Alternatively, the transistor's threshold voltage can be controlled by applying a threshold-control potential to one of the two gates and an operating potential to the other.

[0244] There is no particular restriction regarding the crystallinity of a semiconductor material used in the transistor, and an amorphous semiconductor or a semiconductor with crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single-crystal semiconductor, or a semiconductor that partially comprises crystalline regions) can be used. Preferably, a semiconductor with crystallinity is used, in which case a deterioration of the transistor properties can be suppressed.

[0245] The semiconductor layer of the transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor can contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (e.g., low-temperature polysilicon and single-crystal silicon).

[0246] For example, the semiconductor layer preferably contains indium, M (M is one or more types selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more types selected from aluminum, gallium, yttrium, and tin.

[0247] For the semiconductor layer, an oxide containing indium (In), gallium (Ga) and zinc (Ga) (also known as IGZO) is particularly preferably used.

[0248] In the case where the semiconductor layer is an In-M-Zn oxide, it is preferable, with regard to the atomic ratio in a sputtering target used to form the In-M-Zn oxide, that the atomic fraction of In is greater than or equal to that of M. Examples of the atomic ratios of the metal elements in such a sputtering target are as follows: In:M:Zn = 1:1:1; In:M:Zn = 1:1:1.2; In:M:Zn = 2:1:3; In:M:Zn = 3:1:2; In:M:Zn = 4:2:3; In:M:Zn = 4:2:4.1; In:M:Zn = 5:1:6; In:M:Zn = 5:1:7; In:M:Zn = 5:1:8; In:M:Zn = 6:1:6; and In:M:Zn = 5:2:5.

[0249] A target containing a polycrystalline oxide is preferably used as the sputtering target, since a crystallinity-rich semiconductor layer can be readily formed. It should be noted that the atomic ratio in the formed semiconductor layer may deviate by ±40% from the aforementioned atomic ratio between the metal elements of the sputtering target. For example, if a sputtering target with an atomic ratio of In to Ga and Zn of 4:2:4.1 is used for the semiconductor layer, the atomic ratio of In to Ga and Zn in the formed semiconductor layer may be 4:2:3 or close to 4:2:3.

[0250] If it is assumed that in the expression "the atomic ratio of In to Ga and Zn is 4:2:3 or close to 4:2:3" the atomic fraction of In is 4, then the case is included where the atomic fraction of Ga is greater than or equal to 1 and less than or equal to 3, and the atomic fraction of Zn is greater than or equal to 2 and less than or equal to 4. If it is assumed that in the expression "the atomic ratio of In to Ga and Zn is 5:1:6 or close to 5:1:6" the atomic fraction of In is 5, then the case is included where the atomic fraction of Ga is greater than 0.1 and less than or equal to 2, and the atomic fraction of Zn is greater than or equal to 5 and less than or equal to 7.If it is assumed that in the expression "the atomic ratio of In to Ga and Zn is 1:1:1 or close to 1:1:1" the atomic fraction of In is 1, then the case is included in which the atomic fraction of Ga is greater than 0.1 and less than or equal to 2 and the atomic fraction of Zn is greater than 0.1 and less than or equal to 2.

[0251] The transistor contained in circuit 164 and the transistor contained in light-emitting section 163 may have the same structure or different structures. A variety of transistors contained in circuit 164 may have the same structure or two or more types of structures. Similarly, a variety of transistors contained in light-emitting section 163 may have the same structure or two or more types of structures.

[0252] A connection section 204 is provided in an area where substrate 151 and substrate 152 do not overlap. In the connection section 204, the conductor 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. The conductive layer 166 is exposed on the top surface of the connection section 204 and is obtained by processing the same conductive film as the pixel electrode 191B and the pixel electrode 191N. Thus, the connection section 204 and the FPC 172 can be electrically connected to each other via the connection layer 242.

[0253] Various optical components can be arranged on the outside of the substrate 152. Examples of optical components include a polarizing plate, a retardation plate, a light diffusion layer (e.g., a diffusion film), an anti-reflective layer, and a light-focusing film. Furthermore, an antistatic film to prevent dust adhesion, a water-repellent film to suppress stain adhesion, a hard film to suppress scratches caused during use, a shock-absorbing layer, or the like can be arranged on the outside of the substrate 152.

[0254] Glass, quartz, ceramic, sapphire, resin, or the like can be used for each of the substrates 151 and 152. If substrates 151 and 152 are formed using a flexible material, the flexibility of the light-emitting device can be increased.

[0255] Various curing adhesives can be used as the adhesive layer, such as light-curing adhesives like ultraviolet-curing adhesives, reactive-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, polyvinyl chloride (PVC) resins, polyvinyl butyral (PVB) resins, and ethylene vinyl acetate (EVA) resins. A material with low moisture permeability, such as an epoxy resin, is particularly preferred. A two-component resin can be used. An adhesive film or similar material can also be used.

[0256] Any of the following anisotropic conductive films (ACF), anisotropic conductive pastes (ACP), or the like can be used as the interconnect layer 242.

[0257] Any of the following metals, such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, or an alloy containing any of these metals as its main component, can be used as materials for the gates, source, and drain of a transistor, as well as for the conductive layers that serve as conductors and electrodes in the light-emitting device. A single-layer structure or a multi-layer structure, including a film containing any of these materials, can be used.

[0258] A conductive oxide, such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide containing gallium, or graphene, can be used as the translucent conductive material. It is also possible to use a metallic material, such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy containing any of these metallic materials. Alternatively, a nitride of any of these metallic materials (e.g., titanium nitride) or the like can be used. In the case of using the metallic material or the alloy (or its nitride), the film thickness is preferably adjusted to be small enough to transmit light. Alternatively, a multilayer film of any of the aforementioned materials can be used for the conductive layers.For example, a multilayer film of indium tin oxide and an alloy of silver and magnesium is preferably used, as this increases the conductivity. They can also be used for conductive layers, such as conductors and electrodes contained in the light-emitting device, and for conductive layers (e.g., a conductive layer serving as a pixel electrode or common electrode) contained within a light-emitting device.

[0259] Examples of insulating materials that can be used for the insulating layers include a resin, such as an acrylic resin and an epoxy resin, and an inorganic insulating material, such as silicon dioxide, silicon oxynitride, silicon nitride oxide, silicon nitride or aluminum oxide. [Light Emitting Device 200B]

[0260] Fig. Figure 13A is a cross-sectional view of the light-emitting device 200B.

[0261] The light-emitting device 200B differs from the light-emitting device 200A in terms of the transistor structures.

[0262] The light-emitting device 200B includes a transistor 202, a transistor 208 and a transistor 210 above the substrate 151.

[0263] Transistor 202, transistor 208, and transistor 210 each comprise the conductive layer 221, which serves as the gate; the insulating layer 211, which serves as the gate insulating layer; a semiconductor layer comprising a channel-forming region 231i and a pair of low-resistance regions 231n; the conductive layer 222a, which is connected to one of the pair of low-resistance regions 231n; the conductive layer 222b, which is connected to the other of the pair of low-resistance regions 231n; the insulating layer 225, which serves as the gate insulating layer; the conductive layer 223, which serves as the gate; and the insulating layer 215, which covers the conductive layer 223. The insulating layer 211 is positioned between the conductive layer 221 and the channel-forming region 231i. The insulating layer 225 is positioned between the conductive layer 223 and the channeling area 231i.

[0264] The conductive layer 222a and the conductive layer 222b are individually connected to the low-resistance regions 231n via openings in the insulating layer 225 and the insulating layer 215. One of the conductive layers 222a and 222b serves as the source and the other as the drain.

[0265] The pixel electrode 191B of the light-emitting device 190B is electrically connected via the conductive layer 222b to one of the pair of low-resistance regions 231n of the transistor 210.

[0266] The pixel electrode 191N of the light-emitting device 190N is electrically connected via the conductive layer 222b to one of the pair of low-resistance regions 231n of the transistor 208.

[0267] Fig. Figure 13A provides an example in which the insulating layer 225 covers the top and side surfaces of the semiconductor layer. In contrast, in Fig. 13B the insulating layer 225 with the channel-forming region 231i of the semiconductor layer 231, not with the low-resistance regions 231n. For example, a structure that is in Fig. Figure 13B is shown to be produced by processing the insulating layer 225 using the conductive layer 223 as a mask. Fig. In 13B, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are connected to the respective low-resistance regions 231n via openings in the insulating layer 215. Furthermore, an insulating layer 218 can be provided to cover the transistor.

[0268] The light-emitting device 200B differs from the light-emitting device 200A in that it does not include the substrate 151 and the substrate 152, but it includes the substrate 153, the substrate 154, the adhesive layer 155 and the insulating layer 212.

[0269] Substrate 153 and insulating layer 212 are joined together using adhesive layer 155. Substrate 154 and protective layer 195 are joined together using adhesive layer 142.

[0270] The light-emitting device 200B is fabricated by transferring the insulating layer 212, the transistor 202, the transistor 208, the transistor 210, the light-emitting device 190, and the like, formed on a fabrication substrate, onto the substrate 153. The substrate 153 and the substrate 154 are preferably flexible. Consequently, the flexibility of the light-emitting device 200B can be increased.

[0271] For insulating layer 212, an inorganic insulating film that can be used for insulating layer 211, insulating layer 213 and insulating layer 215 can be used.

[0272] In the light-emitting device 200B, the protective layer 195 and the substrate 154 are bonded together with the adhesive layer 142. The adhesive layer 142 overlaps the light-emitting device 190, i.e., the light-emitting device has in Fig. 13A features a solid sealing structure. [Metal oxide]

[0273] The following describes a metal oxide that can be used as a semiconductor layer.

[0274] It should be noted that in this description and similar texts, a metal oxide containing nitrogen is also sometimes referred to as a metal oxide. A nitrogen-containing metal oxide may also be called a metal oxynitride. For example, a metal oxide containing nitrogen, such as zinc oxynitride (ZnON), can be used for the semiconductor layer.

[0275] It should be noted that in this description and similar ones, the terms "c-axis aligned crystal (CAAC)" and "cloud-aligned composite (CAC)" may be used. CAAC denotes an example of a crystal structure, and CAC denotes an example of a function or material composition.

[0276] For example, a CAC (cloud-aligned composite) OS (oxide semiconductor) can be used for the semiconductor layer.

[0277] A CAC oxide or CAC metal oxide exhibits a conductive function in one part of the material, an insulating function in another part, and a semiconductor function as a whole. When the CAC oxide or CAC metal oxide is used in a semiconductor layer of a transistor, the conductive function allows electrons (or holes) to flow as charge carriers, while the insulating function prevents this flow. Due to the complementary action of the conductive and insulating functions, the CAC oxide or CAC metal oxide can also exhibit a switching (on / off) function. Within the CAC oxide or CAC metal oxide, separating these functions can maximize each one.

[0278] The CAC-OS, or CAC metal oxide, comprises conductive and insulating regions. The conductive regions exhibit the conductive function described above, and the insulating regions exhibit the insulating function described above. In some cases, the conductive and insulating regions are further separated at the nanoparticle scale within the material. In some cases, the conductive and insulating regions are also unevenly distributed within the material. Additionally, in some cases, the conductive regions are observed to be cloud-coupled, with indistinct boundaries.

[0279] Furthermore, in some cases in the CAC-OS or the CAC metal oxide, the conductive regions and the insulating regions each have a size greater than or equal to 0.5 nm and less than or equal to 10 nm, preferably greater than or equal to 0.5 nm and less than or equal to 3 nm, and they are dispersed in the material.

[0280] The CAC oxide or CAC metal oxide further contains components with different band gaps. For example, the CAC oxide or CAC metal oxide contains a component with a large band gap due to the insulating region and a component with a small band gap due to the conducting region. In the case of such a composition, charge carriers flow predominantly in the component with the small band gap. The component with the small band gap also complements the component with the large band gap, and charge carriers also flow in the component with the large band gap in conjunction with the component with the small band gap. Consequently, when the CAC oxide or CAC metal oxide described above is used for a channel-forming region of a transistor, a high current-driving capability in the transistor's forward state, i.e., a high forward current and high field-effect mobility, can be obtained.

[0281] CAC-OS or CAC metal oxide can therefore be described as a matrix composite or metal matrix composite.

[0282] An oxide semiconductor (metal oxide) is divided into a single-crystal oxide semiconductor and a non-single-crystal oxide semiconductor. Examples of a non-single-crystal oxide semiconductor include a c-axis-aligned crystalline oxide semiconductor (CAAC-OS), a polycrystalline oxide semiconductor, a nanocrystalline oxide semiconductor (nc-OS), an amorphous-like oxide semiconductor (a-like OS), and an amorphous oxide semiconductor.

[0283] The CAAC-OS exhibits an orientation with respect to the c-axis, its nanocrystals are connected in the direction of the ab-plane, and its crystal structure exhibits distortion. It should be noted that distortion refers to a section where the direction of a lattice arrangement changes between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement in a region where the nanocrystals are connected.

[0284] The shape of the nanocrystal is fundamentally hexagonal; however, the shape is not always restricted to a regular hexagon and is, in some cases, an irregular hexagon. Pentagonal, heptagonal, and similar lattice arrangements are sometimes present within the distortion. It should be noted that even near the distortion, it is difficult to observe a distinct grain boundary in the CAAC-OS. That is, the formation of a grain boundary is hindered or prevented by the distortion of the lattice arrangement. This is because the CAAC-OS can tolerate distortion thanks to a low density of oxygen atoms arranged towards the ab plane, a change in the interatomic bond distance through substitution of a metallic element, and the like.

[0285] CAAC-OS tends to exhibit a layered crystal structure (also referred to as a multilayer structure) in which a layer containing indium and oxygen (hereinafter referred to as the In layer) and a layer containing the element M, zinc, and oxygen (hereinafter referred to as the (M, Zn) layer) are arranged one above the other. It should be noted that indium and the element M can be interchanged, and that if the element M in the (M, Zn) layer is replaced by indium, the layer can also be referred to as the (In, M, Zn) layer. Conversely, if the indium in the In layer is replaced by the element M, the layer can also be referred to as the (In, M) layer.

[0286] CAAC-OS is a metal oxide with high crystallinity. In contrast, a reduction in electron mobility due to a grain boundary is less likely in CAAC-OS, as a distinct grain boundary is difficult to observe. The intrusion of impurities, the formation of defects, or similar factors could reduce the crystallinity of a metal oxide. This means that CAAC-OS contains only small amounts of impurities and defects (e.g., oxygen vacancies). O : Oxygen Vacancy). Thus, a metal oxide with CAAC-OS is physically stable; therefore, a metal oxide with CAAC-OS is heat-resistant and exhibits high reliability.

[0287] In the nc-OS, a microscopic region (for example, a region with a size greater than or equal to 1 nm and less than or equal to 10 nm, in particular a region with a size greater than or equal to 1 nm and less than or equal to 3 nm) exhibits a regular atomic arrangement. There is no regularity in the crystal orientation between different nanocrystals in the nc-OS. Therefore, no orientation of the entire film is observed. Consequently, in some cases, the nc-OS cannot be distinguished from an a-like OS or an amorphous oxide semiconductor, depending on the analytical method used.

[0288] It should be noted that indium gallium zinc oxide (hereinafter IGZO), a metal oxide containing indium, gallium, and zinc, exhibits a stable structure in some cases when formed from the nanocrystals described above. In particular, IGZO crystals tend not to grow in air, so a stable structure results when IGZO is formed from smaller crystals (e.g., the nanocrystals described above) rather than from larger crystals (here, crystals several millimeters or several centimeters in size).

[0289] The a-like OS is a metal oxide with a structure intermediate between that of the nc-OS and the amorphous oxide semiconductor. The a-like OS contains a cavity or region of low density. This means that the a-like OS exhibits lower crystallinity compared to the nc-OS and the CAAC-OS.

[0290] An oxide semiconductor (metal oxide) can have various structures that exhibit different properties. Two or more of the amorphous oxide semiconductor, the polycrystalline oxide semiconductor, the α-like oxide semiconductor, the nc-oxide semiconductor, and the CAAC-oxide semiconductor can be included in an oxide semiconductor of an embodiment of the present invention.

[0291] A metal oxide film, serving as a semiconductor layer, can be deposited using an inert gas and / or an oxygen gas. It should be noted that there is no particular restriction on the oxygen flow rate (oxygen partial pressure) during the deposition of the metal oxide film. However, to obtain a transistor with high field-effect mobility, the oxygen flow rate (oxygen partial pressure) during the deposition of the metal oxide film is preferably higher than or equal to 0% and lower than or equal to 30%, more preferably higher than or equal to 5% and lower than or equal to 30%, and even more preferably higher than or equal to 7% and lower than or equal to 15%.

[0292] The energy gap of the metal oxide is preferably 2 eV or larger, more preferably 2.5 eV or larger, and even more preferably 3 eV or larger. Using a metal oxide with such a large energy gap allows the reverse current of the transistor to be reduced.

[0293] The substrate temperature during metal oxide film deposition is preferably lower than or equal to 350 °C, more preferably higher than or equal to room temperature and lower than or equal to 200 °C, and even more preferably higher than or equal to room temperature and lower than or equal to 130 °C. Room temperature is preferred for substrate deposition of the metal oxide film, as this increases productivity.

[0294] The metal oxide film can be formed using a sputtering process. Alternatively, a PLD process, a PECVD process, a thermal CVD process, an ALD process, a vacuum evaporation process, or similar methods can be used.

[0295] The light-emitting device of this embodiment includes, as described above, the light-emitting device that emits visible light and the light-emitting device that emits visible light. The light-emitting device of this embodiment that can emit both visible light and infrared light is advantageous because it can be used as a light source by all of the following sensors: a sensor that uses visible light as the light source, a sensor that uses infrared light as the light source, and a sensor that uses both visible light and infrared light as the light source.

[0296] In the light-emitting device of this embodiment, the infrared-emitting device and the visible-emitting device comprise a plurality of common light-emitting layers. Furthermore, the layers, with the exception of the optical matching layer, can be used together. Therefore, the light-emitting device can have an infrared-emitting function without significantly increasing the number of manufacturing steps.

[0297] In the light-emitting device of this embodiment, a subpixel can emit both visible and infrared light. Therefore, the light-emitting device can also have a function for emitting infrared light without significantly altering the pixel layout of the light-emitting device (for example, without increasing the number of subpixels in a pixel).

[0298] This embodiment can be combined with the other embodiment as needed. In cases where a multitude of structural examples are shown for one embodiment in this description, the structural examples can be combined as required. (Version 2)

[0299] In this embodiment, a display device of an embodiment of the present invention is based on Fig. 14 to Fig. 21 described.

[0300] The display device of an embodiment of the present invention comprises, in its display section, a light-emitting device that emits infrared light, a light-emitting device that emits visible light, and a light-receiving device that detects at least a portion of visible light and a portion of infrared light. Visible light is defined as light with a wavelength greater than or equal to 400 nm and less than 750 nm; for example, red, green, or blue light. Infrared light is defined as near-infrared light; for example, light with a wavelength greater than or equal to 750 nm and less than or equal to 1300 nm.

[0301] The display device of an embodiment of the present invention comprises, in its display section, a first light-emitting device, a second light-emitting device, and a light-receiving device. The first light-emitting device comprises a first pixel electrode, a first optical matching layer, a first light-emitting layer, a second light-emitting layer, and a common electrode. The second light-emitting device comprises a second pixel electrode, a second optical matching layer, the first light-emitting layer, the second light-emitting layer, and the common electrode. The first optical matching layer is positioned between the first pixel electrode and the common electrode. The second optical matching layer is positioned between the second pixel electrode and the common electrode.The first light-emitting layer and the second light-emitting layer each have a region positioned between the first pixel electrode and the common electrode, and a region positioned between the second pixel electrode and the common electrode. The light-receiving device includes a third pixel electrode, an active layer, and the common electrode. The active layer is positioned between the third pixel electrode and the common electrode. The active layer contains an organic compound. The first light-emitting device emits infrared light emitted by the first light-emitting layer. The second light-emitting device emits visible light emitted by the second light-emitting layer. The light-receiving device has a function for absorbing at least a portion of the visible light and a portion of the infrared light.

[0302] The display device of an embodiment of the present invention can display an image using visible light emitted by the light-emitting device. In particular, light-emitting devices are arranged in a matrix within the display section, and an image can be displayed on this display section.

[0303] Furthermore, in the display device of an embodiment of the present invention, a light-emitting device can be used as the light source of a sensor (such as an image sensor or an optical touch sensor). The display device of an embodiment of the present invention can emit both visible light and infrared light and can therefore be combined with a sensor that uses visible light as the light source and a sensor that uses infrared light as the light source, which is very practical. A light-emitting device can also be used as the light source of a sensor that uses both visible and infrared light as light sources, which can increase the functionality of such a sensor.

[0304] The display section contains light-receiving devices arranged in a matrix, and the display section itself also serves as a light-receiving section. Each light-receiving device can detect visible light and / or infrared light. The light-receiving section can be used for an image sensor or a touch sensor. This means that by detecting light in the light-receiving section, an image can be captured, or the approach or contact of an object (e.g., a finger or a pen) can be detected.

[0305] The display device of an embodiment of the present invention can serve as a sensor by having the light-emitting device emit light with a wavelength that is detected by the light-receiving device. Therefore, neither a light-receiving section nor a light source needs to be provided separately from the display device, and consequently, the number of components of an electronic device can be reduced.

[0306] In the display device of an embodiment of the present invention, when a light emission from the light-emitting device contained in the display section is reflected by an object, the light-receiving device can detect this reflected light, and therefore the imaging or detection of a touch (or approach) is possible even in a dark environment.

[0307] In the display device of one embodiment of the present invention, three devices—namely, the light-emitting device that emits infrared light, the light-emitting device that emits visible light, and the light-receiving device—can comprise a common layer. Therefore, an infrared light-emitting function can be added to the display device, and the light-receiving device can be integrated into it, without significantly increasing the number of manufacturing steps. For example, the three devices can share at least one hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

[0308] It should be noted that, with respect to a layer common to both the light-receiving and light-emitting devices, its function in the light-receiving device may differ from its function in the light-emitting devices. In this description, a component is named according to its function in the light-emitting device. For example, the hole injection layer serves as a hole injection layer in the light-emitting device, while in the light-receiving device it serves as a hole transport layer. Similarly, the electron injection layer serves as an electron injection layer in the light-emitting device, while in the light-receiving device it serves as an electron transport layer. It should be noted that the hole transport layer serves as a hole transport layer in both the light-emitting and light-receiving devices.Similarly, the electron transport layer serves as an electron transport layer in both the light-emitting device and the light-receiving device.

[0309] The light-emitting devices described in embodiment 1 can be used for the display device of an embodiment of the present invention. For the structure and features of the light-emitting devices included in the display device of this embodiment, reference can be made to embodiment 1, and a detailed description can therefore sometimes be omitted.

[0310] If the light-receiving device is used for an image sensor, the display device of this embodiment can capture an image with the light-receiving device.

[0311] The image sensor can, for example, obtain data from a fingerprint, palm print, iris, or similar source. This means that a sensor for biometric authentication can be integrated into the display device of this embodiment. When the biometric authentication sensor is integrated into the display device, the number of components of an electronic device can be reduced, and the size and weight of the electronic device can be decreased, compared to the case where a biometric authentication sensor is provided separately.

[0312] The image sensor can also capture data about a user's facial expressions, eye movements, changes in pupil diameter, and similar characteristics. Analyzing this data allows for the acquisition of psychological and physical information about the user. Based on this information, the displayed information and / or sound is modified, enabling the user to safely operate, for example, a virtual reality (VR), augmented reality (AR), or mixed reality (MR) device.

[0313] When the light-receiving device is used for a touch sensor, the display device of this embodiment can detect an approach or contact of an object with the light-receiving device.

[0314] A pn or pin photodiode, for example, can be used as a light-receiving device. This device acts as a photoelectric converter, capturing incident light and generating charges. The amount of charge generated is then determined based on the amount of incident light.

[0315] A light-receiving device, in particular an organic photodiode with a layer containing an organic compound, is preferably used. The thickness and weight of the organic photodiode can be easily reduced, and its size can be easily increased. Furthermore, the shape and design of the organic photodiode can be determined relatively freely, allowing it to be applied to various display devices.

[0316] In one embodiment of the present invention, an organic EL device is used as the light-emitting device and an organic photodiode is used as the light-receiving device. An organic photodiode comprises many layers that can also be used in an organic EL device. Therefore, a light-receiving device can be incorporated into the display device without significantly increasing the number of manufacturing steps. For example, an active layer of a light-receiving device and a light-emitting layer of a light-emitting device can be formed separately, and other layers can be formed for both the light-emitting device and the light-receiving device.

[0317] Fig. 14A to Fig. Figures 14D are each a cross-sectional view of the display device of an embodiment of the present invention.

[0318] The in Fig. The display device 50A shown in Figure 14A includes a layer 53 with light-receiving devices and a layer 57 with light-emitting devices between the substrate 151 and the substrate 152.

[0319] The in Fig. The display device 50B shown in Figure 14B includes, between substrate 151 and substrate 152, layer 53 with light-receiving devices, layer 55 with transistors and layer 57 with light-emitting devices.

[0320] In the display device 50A and the display device 50B, red (R-) light, green (G-) light, blue (B-) light and infrared (IR) light are emitted from layer 57 by light-emitting devices.

[0321] The structure of layer 57 with light-emitting devices can be based on the structure of the light-emitting device of embodiment 1. That is, the light-emitting devices contained in the light-emitting device of embodiment 1 can be used for layer 57 with light-emitting devices.

[0322] Layer 55, comprising transistors, preferably includes a first transistor and a second transistor. The first transistor is electrically connected to the light-receiving device. The second transistor is electrically connected to the light-emitting device.

[0323] Layer 53, containing light-receiving devices, can be configured to detect visible light, infrared light, or both. Depending on the sensor's intended use, the wavelength of light detected by the light-receiving device can be specified.

[0324] The display device of an embodiment of the present invention can have a function for detecting an object touching the display device, such as a finger. As described in Fig. As shown in Figure 14C, for example, light emitted by the light-emitting device in layer 57 is reflected by a finger 52 touching the display device 50B, and this reflected light is then detected by the light-receiving device in layer 53. In this way, the touch of the finger 52 on the display device 50B can be detected.

[0325] The display device of an embodiment of the present invention can, as shown in Fig. 14D shown, also includes a function for detecting or mapping an object approaching (not touching) the display device 50B. [Pixel]

[0326] Fig. 15A to Fig. 15F each represent an example of a pixel.

[0327] The display device of an embodiment of the present invention comprises a plurality of pixels arranged in a matrix. Each pixel comprises at least one subpixel. Each subpixel comprises a light-emitting device. For example, a pixel comprises three subpixels, and one of the three subpixels may have a structure in which, in addition to visible light, infrared light is emitted (three colors R, G, and B; three colors yellow (Y), cyan (C), and magenta (M); or the like). Alternatively, a pixel comprises four subpixels, and one of the four subpixels may have a structure in which, in addition to visible light, infrared light is emitted (four colors R, G, B, and white (W); four colors R, G, B, and Y; or the like).Alternatively, a pixel can contain four subpixels (three colors R, G and B as well as infrared light, three colors Y, C and M as well as infrared light or the like) or five subpixels (four colors R, G, B and W as well as infrared light, four colors R, G, B and Y as well as infrared light or the like).

[0328] The pixel also includes a light-receiving device. This light-receiving device can be present in all or some of the pixels. Furthermore, a single pixel can contain multiple light-receiving devices.

[0329] A pixel that is in Fig. Figure 15A includes four subpixels of red (R), green (G), blue (B) and infrared light (IR) (four light-emitting devices) and one light-receiving device PD.

[0330] The pixel that is in Fig. 15B to Fig.15E, which is shown, includes three subpixels of R, G and B (three light-emitting devices) as well as the light-receiving device PD. Fig. 15B and Fig. 15E represent a structure in which the subpixel emits red (R) infrared light (IR), Fig. 15C represents a structure in which the subpixel of green (G) emits infrared light (IR), and Fig. 15D represents a structure in which the subpixel of blue (B) emits infrared light (IR).

[0331] In the display device of an embodiment of the present invention, a subpixel can emit both visible and infrared light. For example, a structure can be used in which one of three subpixels emitting red, green, and blue light emits infrared light. If the subpixel that emits visible light also emits infrared light, the infrared-emitting subpixel does not necessarily need to be provided additionally. Therefore, the display device can emit both visible and infrared light without increasing the number of subpixels contained in a pixel. In this way, the aperture ratio of the pixel can be prevented from being reduced, thereby increasing the light extraction efficiency of the display device.

[0332] Fig. 15B to Fig.15D each represent an example in which three subpixels and the light-receiving device PD are arranged in a 2 × 2 matrix, and Fig. 15E represents an example in which three subpixels and the light-receiving device PD are arranged side by side in a transverse direction.

[0333] The pixel that is in Fig. 15F, which is represented, includes four subpixels of R, G, B and white (W) (four light-emitting devices) as well as the light-receiving device PD.

[0334] Fig. 15E and Fig. 15F each represent a structure in which the subpixel of red (R) emits infrared light (IR); however, without restriction, a subpixel of another color can emit infrared light.

[0335] The structure of the display device of an embodiment of the present invention is described below with reference to Fig. 16 to Fig.21. Among four light-emitting devices for infrared, red, green, and blue light, the light-emitting device that emits infrared light and the light-emitting device that emits blue light are described below. The structure of the light-emitting devices that emit red and green light can be the same as that of the light-emitting device that emits infrared light and the light-emitting device that emits blue light, except for the thickness of the optical matching layer. [Display device 10A]

[0336] Fig. 16A is a cross-sectional view of the display device 10A.

[0337] The display device 10A comprises a light-receiving device 110, a light-emitting device 190N, and a light-emitting device 190B. The light-receiving device 110 has a function for detecting infrared light 21N. The light-emitting device 190N has a function for emitting infrared light 21N. The light-emitting device 190B has a function for emitting blue light 21B.

[0338] It should be noted that the light-receiving device 110 can have a function for detecting not only infrared light but also visible light.

[0339] The light-emitting device 190B and the light-emitting device 190N each comprise the pixel electrode 191, a buffer layer 192, the light-emitting layer 193, a buffer layer 194, and the common electrode 115. The buffer layer 192, the light-emitting layer 193, the buffer layer 194, and the common electrode 115 are provided for both the light-emitting device 190B and the light-emitting device 190N.

[0340] The light-emitting device 190N also includes the optical matching layer 199N between the pixel electrode 191 and the buffer layer 192. In the light-emitting device 190N, the thickness of the optical matching layer 199N is adjusted such that the optical path length between a pair of electrodes is such that infrared light is amplified. Therefore, infrared light can be extracted from the light-emitting device 190N.

[0341] The light-emitting device 190B also includes the optical matching layer 199B between the pixel electrode 191 and the buffer layer 192. In the light-emitting device 190B, the thickness of the optical matching layer 199B is adjusted such that the optical path length between a pair of electrodes is such that blue light is amplified. Therefore, blue light can be extracted from the light-emitting device 190B.

[0342] In this way, it is preferred that the optical matching layer 199 is used to match the optical path length between a pair of electrodes of the light-emitting device, and the other layers (the buffer layer 192, the light-emitting layer 193, and the buffer layer 194) are used jointly among a plurality of light-emitting devices. This reduces the number of deposition steps in the manufacture of the display device, thereby reducing the manufacturing costs and simplifying the manufacturing process.

[0343] Visible light extracted from the light-emitting device is preferably extracted to the outside of the light-emitting device via an optical filter, such as a color layer (e.g., a color filter). Fig.Figure 16A provides an example in which light 21B is extracted from the light-emitting device 190B via the blue color layer CFB. Similarly, infrared light extracted from the light-emitting device can be extracted to the outside of the light-emitting device via an optical filter.

[0344] In Fig.In reference 16A and the like, a plurality of light-emitting layers is referred to as a single light-emitting layer 193. The light-emitting layer 193 comprises a light-emitting layer that emits infrared light and a light-emitting layer that emits visible light. The light-emitting layer 193 preferably comprises a plurality of light-emitting layers that emit visible light. A combination to obtain white light emission, such as three light-emitting layers for R, G, and B or three light-emitting layers for Y, C, and M, is preferred as the light-emitting layer that emits visible light.

[0345] Since the light-emitting device 190B and the light-emitting device 190N each have a single structure, it is preferable that, as described in embodiment 1, the plurality of light-emitting layers are arranged in descending order of wavelength of light, starting from the side of the optical matching layer 199. That is, the light-emitting layer closest to the optical matching layer 199 is preferably a light-emitting layer that emits infrared light. It should be noted that a light-emitting device with a tandem structure can also be used for the display device of an embodiment of the present invention.

[0346] The light receiving device 110 includes a pixel electrode 181, a buffer layer 182, an active layer 183, a buffer layer 184 and the common electrode 115.

[0347] The light-receiving device 110 may further include an optical matching layer 189N between the pixel electrode 181 and the buffer layer 182. If the optical matching layer 189N is provided, the wavelength range detected by the light-receiving device 110 is reduced. Therefore, it is preferred to adjust the thickness of the optical matching layer 189N according to the wavelength to be detected. The thickness of the optical matching layer 189N may be equal to or different from that of one of the optical matching layers 199 of the light-emitting devices. Alternatively, the optical matching layer 189N is not necessarily provided.

[0348] The pixel electrode 181, the buffer layer 182, the buffer layer 192, the active layer 183, the buffer layer 184, the buffer layer 194 and the common electrode 115 can each have a single-layer structure or a multi-layer structure.

[0349] Pixel electrode 181 and pixel electrode 191 are positioned above the insulating layer 214. Pixel electrode 181 and pixel electrode 191 can be formed using the same material and the same manufacturing step.

[0350] In the display device 10A, not only the active layer 183, contained in the light-receiving device 110, and the light-emitting layers 193, contained in the light-emitting devices 190, but also the other layers (the buffer layers) are formed separately. In particular, an example is shown in which, in the light-receiving device 110 and the light-emitting device 190, no common layer is provided between a pair of electrodes (between the pixel electrode 181 or the pixel electrode 191 and the common electrode 115).

[0351] In the light-receiving device 110 and the light-emitting device 190, the pixel electrode 181 and the pixel electrode 191 are formed over the insulating layer 214 using the same material and the same manufacturing step, the buffer layer 182, the active layer 183 and the buffer layer 184 are formed over the pixel electrode 181, the buffer layer 192, the light-emitting layer 193 and the buffer layer 194 are formed over the pixel electrode 191, and the common electrode 115 is formed to cover the pixel electrode 181, the pixel electrode 191, the buffer layer 182, the buffer layer 192, the active layer 183, the light-emitting layer 193, the buffer layer 184 and the buffer layer 194.It should be noted that the fabrication sequence of the multilayer structure consisting of buffer layer 182, active layer 183, and buffer layer 184, and of the multilayer structure consisting of buffer layer 192, light-emitting layer 193, and buffer layer 194, is not particularly restricted. For example, buffer layer 192, light-emitting layer 193, and buffer layer 194 can be formed after buffer layer 182, active layer 183, and buffer layer 184 have been formed. Conversely, buffer layer 192, light-emitting layer 193, and buffer layer 194 can be formed before buffer layer 182, active layer 183, and buffer layer 184 have been formed. Alternatively, the layers can be formed alternately, for example, the buffer layer 182, the buffer layer 192, the active layer 183 and the light-emitting layer 193 can be formed in this order.

[0352] Buffer layer 182 can, for example, be a hole transport layer. Buffer layer 192 can, for example, be a hole injection layer and / or a hole transport layer.

[0353] The active layer 183 overlaps with the pixel electrode 181, with the buffer layer 182 positioned between them. The active layer 183 overlaps with the common electrode 115, with the buffer layer 184 positioned between them. The active layer 183 contains an organic compound. In particular, the active layer 183 contains an organic compound that is different from an organic compound contained in the light-emitting layer 193 of the light-emitting device 190.

[0354] The light-emitting layer 193 overlaps with the pixel electrode 191, with the buffer layer 192 positioned between them. The light-emitting layer 193 overlaps with the common electrode 115, with the buffer layer 194 positioned between them.

[0355] Buffer layer 184 can, for example, be an electron transport layer. Buffer layer 194 can, for example, be an electron injection layer and / or an electron transport layer.

[0356] The common electrode 115 partially overlaps the pixel electrode 181, with the buffer layer 182, the active layer 183, and the buffer layer 184 arranged between them. The common electrode 115 also partially overlaps the pixel electrode 181, with the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 arranged between them. The common electrode 115 is used for both the light-receiving device 110 and the light-emitting device 190.

[0357] The display device of this embodiment contains an organic compound in the active layer 183 of the light-receiving device 110. The light-receiving device 110 can be manufactured by modifying at least part of the structure between a pair of electrodes of the light-emitting device 190 (EL device). Therefore, the light-receiving device 110 can be incorporated into the display section of the display device.

[0358] The display device 10A includes the light receiving device 110, the light emitting device 190N, the light emitting device 190B, a transistor 41, a transistor 42 and the like between a pair of substrates (the substrate 151 and the substrate 152).

[0359] The buffer layer 182, the active layer 183, and the buffer layer 184, which are positioned in the light-receiving device 110 between the pixel electrode 181 and the common electrode 115, can also be referred to as organic layers (layers containing an organic compound). The pixel electrode 181 preferably has a function for reflecting visible and infrared light. An end section of the pixel electrode 181 is covered by the partition 216. The common electrode 115 has a function for transmitting visible and infrared light.

[0360] The light-receiving device 110 has a function for detecting light. In particular, the light-receiving device 110 is a photoelectric conversion device that receives light 22 entering from outside the display device 10A and converts it into an electrical signal. The light 22 can be light obtained by reflection from an object by the light-emitting device 190. The light 22 can also enter the light-receiving device 110 through a lens, which is described below.

[0361] The opaque layer BM is provided over a surface of the substrate 152 facing the substrate 151. The opaque layer BM has an opening in a position that overlaps with the light-receiving device 110 and an opening in a position that overlaps with the light-emitting device 190. When the opaque layer BM is provided, the area in which the light-receiving device 110 detects light can be controlled.

[0362] Here, light from the light-emitting device 190 is reflected by an object, and the reflected light is detected by the light-receiving device 110. However, in some cases, light from the light-emitting device 190 is reflected in the display device 10A and does not enter the light-receiving device 110 via any object. The opaque layer BM can reduce the influence of such scattered light. For example, if no opaque layer BM is provided, in some cases light 23a from the light-emitting device 190 is reflected by the substrate 152, and reflected light 23b enters the light-receiving device 110. By providing the opaque layer BM, it is possible to prevent the reflected light 23b from entering the light-receiving device 110.Therefore, the noise can be reduced, and the sensitivity of a sensor using the light receiving device 110 can be increased.

[0363] The buffer layer 192, the light-emitting layer 193, and the buffer layer 194, which are positioned in the light-emitting device 190 between the pixel electrode 191 and the common electrode 115, can also be referred to as the EL layer. The pixel electrode 191 preferably has a function for reflecting visible and infrared light. An end section of the pixel electrode 191 is covered by the partition 216. The pixel electrode 181 and the pixel electrode 191 are electrically isolated from each other by the partition 216 (also referred to as "electrically separated"). The common electrode 115 has a transmittance property and a reflection property for visible and infrared light.

[0364] The light-emitting device 190N is an electroluminescent device that emits infrared light 21N towards the substrate 152 by applying a voltage between the pixel electrode 191 and the common electrode 115.

[0365] The light-emitting device 190B is an electroluminescent device that emits the blue light 21B towards the substrate 152 by applying a voltage between the pixel electrode 191 and the common electrode 115.

[0366] The light-emitting layer 193 is preferably designed such that it does not overlap with a light-receiving area of ​​the light-receiving device 110. In this way, the light 22 can be prevented from being absorbed by the light-emitting layer 193, thus increasing the amount of light emitted to the light-receiving device 110.

[0367] The pixel electrode 181 is electrically connected to a source or drain of the transistor 41 via an opening provided in the insulating layer 214. An end section of the pixel electrode 181 is covered by the partition 216.

[0368] The pixel electrode 191 is electrically connected to a source or drain of the transistor 42 via an opening provided in the insulating layer 214. An end section of the pixel electrode 191 is covered by the partition 216. The transistor 42 has a function for controlling the drive of the light-emitting device 190.

[0369] Transistor 41 and transistor 42 are located above and in contact with the same layer (above substrate 151 in Fig. 16A).

[0370] At least one part of a circuit electrically connected to the light-receiving device 110 is preferably formed using the same material and the same manufacturing step as a circuit electrically connected to the light-emitting device 190. In this case, the thickness of the display device can be smaller than that in the case where the two circuits are formed separately, and the manufacturing process can be simplified.

[0371] The light-receiving device 110 and the light-emitting device 190 are each preferably covered with the protective layer 195. Fig.In 16A, the protective layer 195 is provided over and in contact with the common electrode 115. The protective layer 195 prevents contaminants, such as water, from penetrating the light-receiving device 110 and the light-emitting device 190, thus increasing the reliability of both. Furthermore, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142.

[0372] It should be noted that, as in Fig. Figure 16B shows that a protective layer is not necessarily provided over the light-receiving device 110 and the light-emitting device 190. Fig. 16B, the common electrode 115 and the substrate 152 are attached to each other using the adhesive layer 142. [Display device 10B]

[0373] Fig.Figure 16B is a cross-sectional view of the display device 10B. It should be noted that the explanation of the components that are identical to those of the display device already described is omitted in some cases in the following explanation of the display device.

[0374] The display device 10B differs from the display device 10A in that it does not include the buffer layer 182 and the buffer layer 192, but instead includes the common layer 112.

[0375] The common layer 112 is placed above pixel electrode 181 and pixel electrode 191. The common layer 112 is shared by light-receiving device 110, light-emitting device 190N, and light-emitting device 190B.

[0376] The common layer 112 can be, for example, a hole injection layer and / or a hole transport layer. The common layer 112 can have a single-layer or a multi-layer structure.

[0377] At least some of the layers other than the active layer and the light-emitting layer are preferably used jointly by the light-receiving device and the light-emitting device, as this reduces the number of manufacturing steps for the display device. [Display device 10C]

[0378] Fig. 16C is a cross-sectional view of the display device 10C.

[0379] The display device 10C differs from the display device 10A in that it does not include the buffer layer 184 and the buffer layer 194, but instead includes the common layer 114.

[0380] The common layer 114 is placed above the partition 216, the active layer 183, and the light-emitting layer 193. The common layer 114 is shared by the light-receiving device 110, the light-emitting device 190N, and the light-emitting device 190B.

[0381] The common layer 114 can be, for example, an electron injection layer and / or an electron transport layer. The common layer 114 can have a single-layer or a multi-layer structure.

[0382] At least some of the layers other than the active layer and the light-emitting layer are preferably used jointly by the light-receiving device and the light-emitting device, since the manufacturing steps of the display device can be reduced. [Display device 10D]

[0383] Fig.Figure 17A is a cross-sectional view of the display device 10D.

[0384] The display device 10D differs from the display device 10A in that it does not include the buffer layer 182, the buffer layer 192, the buffer layer 184 and the buffer layer 194, but it includes the common layer 112 and the common layer 114.

[0385] The display device of this embodiment contains an organic compound in the active layer 183 of the light-receiving device 110. Layers other than the active layer 183 of the light-receiving device 110 can also be used for the light-emitting device 190 (the EL device). Therefore, the light-emitting device 190 and the light-receiving device 110 can be formed in parallel by adding a step for forming the active layer 183 to the manufacturing process of the light-emitting device 190. Furthermore, the light-emitting device 190 and the light-receiving device 110 can be formed on the same substrate. Therefore, the light-receiving device 110 can be incorporated into the display device without significantly increasing the number of manufacturing steps.

[0386] An example is described in which the light-receiving device 110 and the light-emitting device 190 in the display device 10D have the same structure, except that the optical matching layers are formed separately and that the active layer 183 of the light-receiving device 110 and the light-emitting layer 193 of the light-emitting device 190 are formed separately. However, the structures of the light-receiving device 110 and the light-emitting device 190 are not limited to this. In addition to the optical matching layer, the active layer 183, and the light-emitting layer 193, the light-receiving device 110 and the light-emitting device 190 can include other separately formed layers (see the preceding display devices 10A, 10B, and 10C).The light-receiving device 110 and the light-emitting device 190 preferably include at least one layer that is used together (a common layer). Therefore, the light-receiving device 110 can be incorporated into the display device without significantly increasing the number of manufacturing steps. [Display device 10E]

[0387] Fig. Figure 17B is a cross-sectional view of the display device 10E.

[0388] The in Fig. The display device 10E shown in Figure 17B includes, in addition to the components of the display device 10A, a lens 149.

[0389] The display device of this embodiment can include the lens 149. The lens 149 is arranged in a position that overlaps with the light-receiving device 110. In the display device 10E, the lens 149 is provided in contact with the substrate 152. The lens 149 contained in the display device 10E has a convex surface on the side facing the substrate 151. Alternatively, the lens 149 can have a convex surface on the side facing the substrate 152.

[0390] If both the opaque layer BM and the lens 149 are formed on the same surface of the substrate 152, there is no restriction regarding the formation order. Although Fig. In example 17B, where lens 149 is first formed, the opaque layer BM can only be formed later. Fig.17B are end sections of lens 149 covered with the opaque layer BM.

[0391] In the display device 10E, the light 22 passes through the lens 149 into the light-receiving device 110. When the lens 149 is provided, the recording area of ​​the light-receiving device 110 can be reduced compared to the case where no lens 149 is provided, thus preventing the recording areas of adjacent light-receiving devices 110 from overlapping. Consequently, a sharper, clearer image can be captured. When the lens 149 is provided, the size of a pinhole (in Fig.17B corresponds to the size of the opening of the opaque layer BM, which overlaps with the light-receiving device 110, compared to the case where no lens 149 is provided, assuming that the receiving area of ​​the light-receiving device 110 is the same. Therefore, the amount of light entering the light-receiving device 110 can be increased with the lens 149.

[0392] On the side of substrate 152, the lens 149 can be provided with a convex surface in contact with the top surface of the protective layer 195. A lens array can be provided on the side of substrate 152 facing the display surface (the side opposite substrate 151). Lenses contained in the lens array are positioned overlapping the light-receiving device 110. The opaque layer BM is preferably provided on the surface of substrate 152 facing substrate 151.

[0393] As a method for forming the lens used for the display device of this embodiment, a lens, such as a microlens, can be formed directly on the substrate or the light-receiving device, or a separately manufactured lens array, such as a microlens array, can be attached to the substrate. [Display device 10F]

[0394] Fig. 17C is a cross-sectional view of the display device 10F.

[0395] The display device 10F, which is in Fig. The device shown in 17C differs from the display device 10D in that it does not include the substrate 151, the substrate 152 and the partition 216, but includes the substrate 153, the substrate 154, the adhesive layer 155, the insulating layer 212 and a partition 217.

[0396] Substrate 153 and insulating layer 212 are joined together using adhesive layer 155. Substrate 154 and protective layer 195 are joined together using adhesive layer 142.

[0397] The display device 10F is manufactured by transferring the insulating layer 212, the transistor 41, the transistor 42, the light-receiving device 110, the light-emitting device 190, and the like, formed on a fabrication substrate, onto the substrate 153. The substrate 153 and the substrate 154 are preferably flexible. Consequently, the portability of the display device 10F can be increased. For example, a resin is preferably used for the substrate 153 and the substrate 154. A highly optically isotropic film can be used for the substrates of the display device of this embodiment.

[0398] It is preferred that the partition 217 absorbs light emitted by the light-emitting device. For example, the partition 217 can be a black matrix using a resin material containing a pigment or dye, or the like. Alternatively, the partition 217 can be formed with a colored insulating layer using a brown photoresist material.

[0399] In some cases, light emitted by the light-emitting device 190 is reflected by the substrate 152 and the partition 217, and the reflected light enters the light-receiving device 110. Alternatively, in some cases, the light emitted by the light-emitting device 190 passes through the partition 217 and is reflected by the transistor, conductor, or the like, and the reflected light enters the light-receiving device 110. If the light is absorbed by the partition 217, the entry of the reflected light into the light-receiving device 110 can be prevented. Therefore, the noise can be reduced, and the sensitivity of a sensor using the light-receiving device 110 can be increased.

[0400] It is preferred that the partition 217 absorbs at least light with a wavelength that is detected by the light-receiving device 110. For example, in the case where the light-receiving device 110 detects green light 21G emitted by the light-emitting device 190G, it is preferred that the partition 217 absorbs at least green light. For example, if the partition 217 includes a red color filter, it can absorb green light and prevent the reflected light from entering the light-receiving device 110.

[0401] It should be noted that a colored layer that absorbs light can be provided in contact with the top and / or side surface of the light-transmitting partition 216. It is preferred that the colored layer absorbs light emitted by the light-emitting device. For example, the colored layer can be a black matrix using a resin material containing a pigment or dye, or the like. Alternatively, the colored layer can be formed using a brown photoresist material in conjunction with a colored insulating layer.

[0402] It is preferred that the colored layer absorbs at least light with a wavelength that is detected by the light-receiving device 110. For example, in the case where the light-receiving device 110 detects green light 21G emitted by the light-emitting device 190G, it is preferred that the colored layer absorbs at least green light. For example, if the colored layer includes a red color filter, it can absorb green light, thus preventing the reflected light from entering the light-receiving device 110.

[0403] By absorbing scattered light generated in the display device 10F, the colored layer reduces the amount of scattered light entering the light-receiving device 110. Therefore, noise can be reduced, and the sensitivity of a sensor using the light-receiving device 110 can be increased.

[0404] In the display device of this embodiment, the colored layer is provided between the light-receiving device 110 and the light-emitting device 190. Therefore, stray light entering the light-receiving device 110 from the light-emitting device 190 can be suppressed.

[0405] A detailed structure of the display device of an embodiment of the present invention is described below with reference to Fig. 18 to Fig. 21 described. [Display device 100A]

[0406] Fig.Figure 18 is a cross-sectional view of the display device 100A. It should be noted that the display device 100A has a structure in which the light-emitting section 163 of the Fig. The light-emitting device 200A shown in Figure 11 is replaced by a display section 162. In this case, the Fig. The structure shown in Figure 18 can be considered a display module that includes the display device 100A, the IC and the FPC.

[0407] Fig. Figure 18 shows an example of the cross-sections obtained by cutting a part of an area having the FPC 172, a part of an area having the circuit 164, a part of an area having the display section 162, and a part of an area having an end section of the display device 100A.

[0408] The 100A display device, which is in Fig.Figure 18 shows the transistor 201, a transistor 205, a transistor 206, a transistor 207, the light-emitting device 190B, the light-emitting device 190N, the light-receiving device 110 and the like between the substrate 151 and the substrate 152.

[0409] The substrate 152 and the insulating layer 214 are joined together with the adhesive layer 142. The light-emitting device 190B, the light-emitting device 190N, and the light-receiving device 110 can be sealed with a solid sealing structure, a hollow sealing structure, or the like. Fig.In this process, the space 143, enclosed by the substrate 152, the adhesive layer 142, and the insulating layer 214, is filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure is applied. The adhesive layer 142 can also be provided such that it overlaps the light-emitting device 190B, the light-emitting device 190N, and the light-receiving device 110. Alternatively, the space 143, enclosed by the substrate 152, the adhesive layer 142, and the insulating layer 214, can be filled with a resin different from that of the adhesive layer 142.

[0410] The light-emitting device 190B has a multilayer structure in which, starting from the insulating layer 214, the pixel electrode 191B, the optical matching layer 199B, the common layer 112, the light-emitting layer 193, the common layer 114, and the common electrode 115 are arranged one above the other in that order. The pixel electrode 191B is connected via an opening provided in the insulating layer 214 to the conductive layer 222b, which is contained in the transistor 207. The transistor 207 has a function for controlling the drive of the light-emitting device 190B.

[0411] The light-emitting device 190N has a multilayer structure in which, starting from the insulating layer 214, the pixel electrode 191N, the optical matching layer 199N, the common layer 112, the light-emitting layer 193, the common layer 114, and the common electrode 115 are arranged one above the other in that order. The pixel electrode 191N is connected via an opening provided in the insulating layer 214 to the conductive layer 222b, which is contained in the transistor 206. The transistor 206 has a function for controlling the drive of the light-emitting device 190N.

[0412] An end section of pixel electrode 191B and an end section of pixel electrode 191N are covered by the partition 216. Pixel electrode 191B and pixel electrode 191N each contain a material that reflects visible and infrared light, and the common electrode 115 contains a material that transmits and reflects visible and infrared light.

[0413] The light-receiving device 110 has a multilayer structure in which, starting from the insulating layer 214, the pixel electrode 181, the optical matching layer 189, the common layer 112, the active layer 183, the common layer 114, and the common electrode 115 are arranged one above the other in that order. The pixel electrode 181 is connected to the conductive layer 222b, which is contained in the transistor 205, via an opening provided in the insulating layer 214. An end section of the pixel electrode 181 is covered by the partition 216. The pixel electrode 181 contains a material that reflects visible and infrared light, and the common electrode 115 contains a material that transmits and reflects visible and infrared light.

[0414] Light is emitted from the light-emitting device 190B via the color layer CFB towards the substrate 152. Light is also emitted from the light-emitting device 190N towards the substrate 152. Light enters the light-receiving device 110 via the substrate 152 and the space 143. The substrate 152 is preferably made of a material that transmits visible and infrared light to a high degree.

[0415] Pixel electrode 181 and pixel electrode 191 can be formed using the same material and the same manufacturing step. The common layer 112, common layer 114, and common electrode 115 are used by both light-receiving device 110 and light-receiving device 190. Light-receiving device 110 and light-emitting device 190 can contain the same components, with the exception of the optical matching layer, the active layer 183, and the light-emitting layer 193. Therefore, light-receiving device 110 can be incorporated into display device 100A without significantly increasing the number of manufacturing steps.

[0416] The opaque layer BM is provided over a surface of the substrate 152 facing the substrate 151. The opaque layer BM has an opening in a position that overlaps with the light-receiving device 110 and an opening in a position that overlaps with the light-emitting device 190. By providing the opaque layer BM, the area in which the light-receiving device 110 detects light can be controlled. The opaque layer BM prevents light from the light-emitting device 190 from directly entering the light-receiving device 110 via any object. Therefore, a sensor with low noise and high sensitivity can be achieved.

[0417] Transistor 201, transistor 205, transistor 206, and transistor 207 are all formed on substrate 151. These transistors can be formed using the same materials and the same fabrication steps.

[0418] Above substrate 151, insulating layers 211, 213, 215, and 214 are provided in that order. A portion of insulating layer 211 serves as the gate insulating layer of each transistor. A portion of insulating layer 213 also serves as the gate insulating layer of each transistor. Insulating layer 215 is provided to cover the transistor. Insulating layer 214 is provided to cover the transistor and serve as a planarization layer. It should be noted that the number of gate insulating layers and the number of insulating layers covering the transistor are not limited and can be one, two, or more.

[0419] A material through which impurities, such as water and hydrogen, do not readily diffuse is preferably used for at least one of the insulating layers covering the transistors. This is because such an insulating layer can act as a barrier layer. Such a structure can effectively suppress the diffusion of impurities from the outside into the transistors; thus, the reliability of the display device can be increased.

[0420] The insulating layer 211, the insulating layer 213 and the insulating layer 215 are each preferably an inorganic insulating film.

[0421] An organic insulating film typically exhibits a lower barrier property than an inorganic insulating film. Therefore, an organic insulating film preferably has an opening near the end section of the display device 100A. This prevents contaminants from penetrating from the end section of the display device 100A via the organic insulating film. Alternatively, an organic insulating film can be designed such that its end section is located further inward than the end section of the display device 100A, thus preventing the organic insulating film from being exposed to the end section of the display device 100A.

[0422] The insulating layer 214, which serves as a planarizing layer, is preferably an organic insulating film. In the area 228, which is located in Fig.As shown in Figure 18, an opening is formed in the insulating layer 214. Therefore, even when an organic insulating film is used as the insulating layer 214, it is possible to prevent external contaminants from penetrating the display section 162 via the insulating layer 214. In this way, the reliability of the display device 100A can be increased.

[0423] Since the structure of the transistors contained in the 100A display device is the same as the structure of the transistors contained in the 200A light-emitting device ( Fig. 12A) are included, similarly, the detailed description is omitted.

[0424] There are no particular restrictions regarding the structure of the transistors included in the display device of this embodiment. For example, the transistor described in embodiment 1, which can be used for the light-emitting device, can be used for the display device of this embodiment.

[0425] The interconnection section 204 is provided in an area where substrate 151 and substrate 152 do not overlap. In interconnection section 204, conductor 165 is electrically connected to FPC 172 via conductive layer 166 and interconnection layer 242. The conductive layer 166, obtained by processing the same conductive film as the pixel electrode 191, is exposed on the top surface of interconnection section 204. Thus, interconnection section 204 and FPC 172 can be electrically connected to each other via interconnection layer 242.

[0426] Various optical components can be arranged on the outside of the substrate 152. Examples of optical components include a polarizing plate, a retardation plate, a light diffusion layer (e.g., a diffusion film), an anti-reflective layer, and a light-focusing film. Furthermore, an antistatic film to prevent dust adhesion, a water-repellent film to suppress stain adhesion, a hard film to suppress scratches caused during use, a shock-absorbing layer, or the like can be arranged on the outside of the substrate 152.

[0427] The material that can be used for each component of the display device is the material described in embodiment 1 and that can be used for the corresponding component of the light-emitting device.

[0428] The active layer 183 of the light-receiving device 110 contains a semiconductor. Examples of semiconductors include an inorganic semiconductor, such as silicon, and an organic semiconductor containing an organic compound. In this embodiment, an example is described in which an organic semiconductor is used as the semiconductor contained in the active layer. An organic semiconductor is preferably used because the light-emitting layer 193 of the light-emitting device 190 and the active layer 183 of the light-receiving device 110 can be formed by the same process (such as a vacuum evaporation process) and the same fabrication equipment can be used.

[0429] The n-type semiconductor material contained in the active layer 183 can be an organic semiconductor material with electron-accepting properties, such as fullerene (e.g., C).60 or C 70 ) or a derivative thereof. For example, an organic semiconductor material with electron-donating properties, such as copper(II) phthalocyanine (CuPc) or tetraphenyldibenzoperiflanthen (DBP), can be used as the p-type semiconductor material contained in the active layer 183.

[0430] For example, the active layer 183 can be formed by co-evaporation of an n-type semiconductor and a p-type semiconductor. [Display device 100B]

[0431] Fig. Figure 19A is a cross-sectional view of the display device 100B.

[0432] The display device 100B differs mainly from the display device 100A in that it includes the lens 149 and the protective layer 195.

[0433] The light-receiving device 110 and the light-emitting device 190 are each preferably covered with the protective layer 195. This prevents contaminants, such as water, from penetrating the light-receiving device 110 and the light-emitting device 190, thus increasing the reliability of both.

[0434] In the area 228 near the end section of the display device 100B, the insulating layer 215 and the protective layer 195 are preferably in contact with each other via an opening in the insulating layer 214. It is more preferred that an inorganic insulating film in the insulating layer 215 and an inorganic insulating film in the protective layer 195 are in contact with each other. This prevents external contaminants from penetrating the display section 162 via an organic insulating film. This increases the reliability of the display device 100B.

[0435] Fig. 19B is an example in which the protective layer 195 has a three-layer structure. In Fig.19B comprises the protective layer 195, the inorganic insulating layer 195a over the common electrode 115, the organic insulating layer 195b over the inorganic insulating layer 195a and the inorganic insulating layer 195c over the organic insulating layer 195b.

[0436] An end section of the inorganic insulating layer 195a and an end section of the inorganic insulating layer 195c extend to the outer surface of the end section of the organic insulating layer 195b to be in contact with each other. The inorganic insulating layer 195a is in contact with the insulating layer 215 (the inorganic insulating layer) via an opening in the insulating layer 214 (the organic insulating layer). Therefore, the light-receiving device 110 and the light-emitting device 190 can be enclosed by the insulating layer 215 and the protective layer 195, which increases the reliability of the light-receiving device 110 and that of the light-emitting device 190.

[0437] The protective layer 195 can thus have a multilayered structure consisting of an organic insulating film and an inorganic insulating film. It is preferable that an end section of the inorganic insulating film extends towards the outside of an end section of the organic insulating film.

[0438] The lens 149 is positioned over a surface of the substrate 152 facing the substrate 151. On the side facing the substrate 151, the lens 149 has a convex surface. It is preferable that a light-receiving area of ​​the light-receiving device 110 overlaps with the lens 149 and does not overlap with the light-emitting layer 193. Therefore, the sensitivity and accuracy of a sensor using the light-receiving device 110 can be increased.

[0439] The lens 149 preferably has a refractive index of 1.3 or higher and 2.5 or lower. The lens 149 can be made using an inorganic and / or an organic material. For example, a material containing a resin can be used for the lens 149. Alternatively, a material containing an oxide and / or a sulfide can be used for the lens 149.

[0440] For lens 149, a resin containing chlorine, bromine, or iodine, a resin containing a heavy metal atom, a resin containing an aromatic ring, a resin containing sulfur, or the like can be used. Alternatively, a material containing a resin and nanoparticles of a material with a higher refractive index than that resin can be used for lens 149. Nanoparticles of titanium oxide, zirconium oxide, or the like can be used.

[0441] In particular, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, an oxide containing indium and tin, an oxide containing indium, gallium and zinc, or the like may be used for lens 149. Alternatively, zinc sulfide or the like may be used for lens 149.

[0442] In the display device 100B, the protective layer 195 and the substrate 152 are bonded together with the adhesive layer 142. The adhesive layer 142 overlaps the light-receiving device 110 and the light-emitting device 190, meaning that the display device 100B has a solid sealing structure. [Display device 100C]

[0443] Fig. 20A is a cross-sectional view of the display device 100C.

[0444] The display device 100C differs from the display device 100B with regard to the structures of transistors.

[0445] The display device 100C includes the transistor 202, the transistor 208 and the transistor 209 above the substrate 151.

[0446] Since the structure of the transistors contained in the display device 100C is the same as the structure of the transistors contained in the light-emitting device 200B ( Fig. 13A) are included, similarly, the detailed description is omitted.

[0447] Fig. 20A provides an example in which the insulating layer 225 covers the top and side surfaces of the semiconductor layer. In contrast, in Fig. 20B the insulating layer 225 with the channel-forming region 231i of the semiconductor layer 231, not with the low-resistance regions 231n. For example, a structure that is in Fig. 20B is shown, and is produced by processing the insulating layer 225 using the conductive layer 223 as a mask. Fig.In 20B, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are connected to the respective low-resistance regions 231n via openings in the insulating layer 215. Furthermore, the insulating layer 218 can be provided to cover the transistor. [Display device 100D]

[0448] Fig. Figure 21 is a cross-sectional view of the display device 100D.

[0449] The display device 100D differs from the display device 100C in that it does not include the substrate 151 and the substrate 152, but it includes the substrate 153, the substrate 154, the adhesive layer 155 and the insulating layer 212.

[0450] Substrate 153 and insulating layer 212 are joined together using adhesive layer 155. Substrate 154 and protective layer 195 are joined together using adhesive layer 142.

[0451] The display device 100D is manufactured by transferring the insulating layer 212, the transistor 202, the transistor 208, the transistor 209, the light-receiving device 110, the light-emitting device 190, and the like, formed on a fabrication substrate, onto the substrate 153. The substrate 153 and the substrate 154 are preferably flexible. Consequently, the flexibility of the display device 100D can be increased.

[0452] For insulating layer 212, an inorganic insulating film that can be used for insulating layer 211, insulating layer 213 and insulating layer 215 can be used.

[0453] Display device 100C is an example in which no lens 149 is provided, while display device 100D is an example in which the lens 149 is provided. The lens 149 may be provided appropriately depending on the intended use or similar aspects of the sensor.

[0454] The display device of this embodiment includes, as described above, in its display section a light-emitting device that emits infrared light, a light-emitting device that emits visible light, and a light-receiving device that detects at least a portion of visible light and a portion of infrared light. The display section has both a function for displaying an image and a function for detecting light. Therefore, compared to the case where a sensor is provided outside the display section or outside the display device, the size and weight of the electronic device can be reduced. Furthermore, a multifunctional electronic device can be achieved in combination with a sensor located outside the display section or outside the display device.

[0455] At least one layer other than the active layer in the light-receiving device can also be used by the light-emitting device (EL device). Furthermore, all layers other than the active layer in the light-receiving device can also be used by the light-emitting device (EL device). For example, the light-emitting device and the light-receiving device can be formed on the same substrate by adding an active layer formation step to the fabrication process of the light-emitting device. Additionally, in both the light-receiving device and the light-emitting device, the pixel electrode and the common electrode can be formed using the same material and the same fabrication step.If a circuit electrically connected to the light-receiving device and a circuit electrically connected to the light-emitting device are designed using the same materials and manufacturing steps, the manufacturing process of the display device can be simplified. In this way, a very practical display device, incorporating a light-receiving device, can be produced without complicated manufacturing steps.

[0456] This embodiment can be combined with the other embodiment as needed. (Version 3)

[0457] In this embodiment, a material is described that can be used for the light-emitting device of an embodiment of the present invention. <elektrode>

[0458] The material forming the electrode pair of the light-emitting device may be a metal, an alloy, an electrically conductive compound, a mixture thereof, and / or the like. In particular, an In-Sn oxide (also known as ITO), an In-Si-Sn oxide (also known as ITSO), an In-Zn oxide, or an In-W-Zn oxide may be used. It is also possible to use a metal such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), or neodymium (Nd), or an alloy containing a suitable combination of any of these metals. It is also possible to use an element from group 1 or an element from group 2 of the periodic table that has not been described above (e.g.Lithium (Li), cesium (Cs), calcium (Ca) or strontium (Sr)), a rare earth metal such as europium (Eu) or ytterbium (Yb), an alloy containing a suitable combination of any of these, graphene or the like.

[0459] It should be noted that in the fabrication of the light-emitting device with a microcavity structure, a reflective electrode and a semi-transparent and semi-reflective electrode are used. Therefore, a single-layer or multi-layer structure can be formed using one or more types of desired conductive materials. A sputtering process or a vacuum evaporation process can be used to fabricate these electrodes. <Lochinjektionsschicht und Lochtransportschicht>

[0460] The hole injection layer is a layer that injects holes from the anode into the light-emitting unit and contains a material with a high hole injection property.

[0461] Materials with high hole injection properties can include, for example, a transition metal oxide, such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide or manganese oxide, or a phthalocyanine-based compound, such as phthalocyanine (abbreviation: H2Pc) or copper phthalocyanine (abbreviation: CuPc).

[0462] An aromatic amine compound, such as... can be used as a material with high hole injection properties. B. 4,4',4"-Tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4"-Tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA), 4,4'-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-Bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), 1,3,5-Tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-Bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2) or 3-[N-(1-Naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1) are used.

[0463] Materials with high hole-injection properties include poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), or poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: poly-TPD). Alternatively, a high-molecular-weight compound with an added acid can be used, such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (abbreviation: PEDOT / PSS) or polyaniline / poly(styrenesulfonic acid) (abbreviation: PAni / PSS).

[0464] Alternatively, a composite material containing a hole transport material and an acceptor material (an electron acceptor material) can be used as a material with high hole injection properties. In this case, the acceptor material extracts electrons from the hole transport material, creating holes in the hole injection layer, which are then injected through the hole transport layer into the light-emitting layer. It should be noted that the hole injection layer can be configured as a single-layer structure of a composite material containing both a hole transport material and an acceptor material, or it can be formed by stacking the respective layers of a hole transport material and an acceptor material on top of each other.

[0465] The hole transport layer transports holes injected from the anode through the hole injection layer to the light-emitting layer. The hole transport layer contains a hole transport material. It is particularly preferred that the HOMO level of the hole transport material contained in the hole transport layer is equal to or close to that of the hole injection layer.

[0466] The acceptor material used for the hole injection layer can be an oxide of a metal belonging to one of groups 4 to 8 of the periodic table. Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is particularly preferred because it is stable in air, has low hygroscopic properties, and is easy to handle. Alternatively, organic acceptors such as a quinodimethane derivative, a chloranil derivative, and a hexaazatriphenylene derivative can be used. Examples of compounds with an electron-withdrawing group (a halogen group or a cyano group) include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN) and 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ).A compound in which electron-withdrawing groups are bonded to a fused aromatic ring with a multitude of heteroatoms, such as HAT-CN, is particularly preferred because it is thermally stable. A [3] radial derivative with an electron-withdrawing group (especially a cyano group or a halogen group such as a fluorine group) has a very high electron-accepting property and is therefore preferred. Specific examples include α,α',α''-1,2,3-cyclopropanetriylidentris[4-cyano-2,3,5,6-tetrafluorobenzolacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidentris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzolacetonitrile] and α,α',α''-1,2,3-cyclopropanetriylidentris[2,3,4,5,6-pentafluorobenzolacetonitrile].

[0467] The hole transport material used for the hole injection layer and the hole transport layer is a substance with a hole mobility of 10 -6 cm 2 / Vs or higher is preferred. It should be noted that other substances may be used as long as they have a hole transport property that is higher than their electron transport property.

[0468] Materials with high hole transport properties, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, and a furan derivative) and an aromatic amine (a compound with an aromatic amine skeleton), are preferred as hole transport materials.

[0469] Examples of the carbazole derivative (a compound with a carbazole skeleton) include a bicarbazole derivative (e.g., a 3,3'-bicarbazole derivative) and an aromatic amine with a carbazolyl group.

[0470] Specific examples of the bicarbazole derivative (e.g., a 3,3'-bicarbazole derivative) include 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9'-bis(1,1'-biphenyl-4-yl)-3,3'-bi-9H-carbazole, 9,9'-bis(1,1'-biphenyl-3-yl)-3,3'-bi-9H-carbazole, 9-(1,1'-biphenyl-3-yl)-9'-(1,1'-biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP) and 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP).

[0471] Specific examples of the aromatic amine with a carbazolyl group include 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), and 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (Abbreviation: PCBANB), 4,4'-Di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (Abbreviation: PCBNBB), 4-Phenyldiphenyl-(9-phenyl-9H-carbazol-3-yl)amine (Abbreviation: PCA1BP), N,N'-Bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzene-1,3-diamine (Abbreviation: PCA2B), N,N',N''-Triphenyl-N,N,N''-tris(9-phenylcarbazol-3-yl)benzene-1,3,5-triamine (Abbreviation: PCA3B), 9,9-Dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluorene-2-amine (Abbreviation: PCBAF),N-Phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluorene-2-amine (abbreviation: PCBASF), PCzPCA1, PCzPCA2, PCzPCN1, 3-[N-(4-Diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3,6-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), 3,6-Bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTPN2), 2-[N-(9-Phenylcarbazole-3-yl)-N-phenylamino]spiro-9,9'-bifluorene (abbreviation: PCASF), N-[4-(9H-carbazol-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation: YGA1BP), N,N'-Bis[4-(carbazol-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA2F) and 4,4',4''-Tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA).

[0472] In addition to the compounds mentioned above, further examples of the carbazole derivative include 3-[4-(9-Phenanthryl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPPn), 3-[4-(1-Naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 1,3-Bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-Di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-Bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 1,3,5-Tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB) and 9-[4-(10-Phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA).

[0473] Specific examples of the thiophene derivative (a compound with a thiophene framework) and the furan derivative (a compound with a furan framework) include a compound with a thiophene framework, such as... B. 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) or 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II).

[0474] Specific examples of the aromatic amine include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), N-(9,9-Dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-Dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), 2-[N-(4-Diphenylaminophenyl)-N-phenylamino]spiro-9,9'-bifluorene (abbreviation: DPASF), 2,7-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]spiro-9,9'-bifluorene (abbreviation: DPA2SF), 4,4',4''-Tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: 1'-TNATA), TDATA, m-MTDATA, N,N'-Di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), DPAB, DNTPD and DPA3B.,

[0475] A high molecular weight compound, such as PVK, PVTPA, PTPDMA or Poly-TPD, can also be used as the hole transport material.

[0476] The hole transport material is not limited to the above examples and one or a combination of different known materials can be used as the hole transport material for the hole injection layer and the hole transport layer. <Licht emittierende Schicht>

[0477] The light-emitting layer contains a light-emitting substance. The light-emitting layer can contain one or more types of light-emitting substances. A substance whose emission color is blue, violet, blue-violet, green, yellow-green, yellow, orange, red, or the like is used as the light-emitting substance, provided it is appropriately selected. Alternatively, a substance that emits near-infrared light can be used as the light-emitting substance.

[0478] The light-emitting layer can contain, in addition to the light-emitting substance (a guest material), one or more types of organic compounds (e.g., a host material and an auxiliary material). The hole transport material and / or the electron transport material described in this embodiment can be used as one or more types of organic compounds. Alternatively, a bipolar material can be used as one or more types of organic compounds.

[0479] There is no particular restriction regarding the light-emitting substances that can be used for the light-emitting layer, and a light-emitting substance that converts singlet excitation energy into light emission in the visible light range or near-infrared light range, or a light-emitting substance that converts triplet excitation energy into light emission in the visible light range or near-infrared light range, can be used.

[0480] As an example of a light-emitting substance that converts singlet excitation energy into light emission, a substance that emits fluorescence (fluorescent material) can be given. Examples include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. A pyrene derivative is particularly preferred because it exhibits a high emission quantum yield.Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), N,N'-bis(dibenzothiophene-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02) and N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03).

[0481] Furthermore, it is possible to obtain 5,6-Bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-Bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-Bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-Diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA), Perylene, 2,5,8,11-Tetra(tert-butyl)perylene (abbreviation: TBP), N,N''-(2-tert-Butylanthracene-9,10-diyldi-4,1-phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine] (abbreviation: DPABPA), N,9-Diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: 2PCAPPA), N-[4-(9,to use 10-Diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA) or the like.

[0482] Examples of light-emitting substances that convert triplet excitation energy into light emission include substances that emit phosphorescence (phosphorescent material) and thermally activated delayed fluorescence (TADF) materials that emit thermally activated delayed fluorescence.

[0483] Examples of the phosphorescent material include a metal-organic complex (especially an iridium complex) having a 4H-triazole framework, a 1H-triazole framework, an imidazole framework, a pyrimidine framework, a pyrazine framework or a pyridine framework, a metal-organic complex (especially an iridium complex) in which a phenylpyridine derivative with an electron-withdrawing group is a ligand, a platinum complex and a rare earth metal complex.

[0484] Examples of phosphorescent materials that display blue or green light and whose emission spectrum has a peak wavelength of more than or equal to 450 nm and less than or equal to 570 nm include the following substances.

[0485] For example, organometallic complexes with a 4H-triazole skeleton, such as Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN 2 ]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), Tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), Tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b)3]) and Tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPr5btz)3]), organometallic complexes with a 1H-triazole skeleton, such as... B. Tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]) and Tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), organometallic complexes with an imidazole skeleton, such asfac-Tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi)3]) and Tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]), and organometallic complexes in which a phenylpyridine derivative with an electron-withdrawing group is a ligand, such as Bis[2-(4',6'-difluorophenyl)pyridinato-N,C. 2' ]iridium(III)tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), Bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2' ]iridium(III)picolinate (abbreviation: FIrpic), Bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2' }iridium(III)picolinate (abbreviation: [Ir(CF3ppy)2(pic)]) and Bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2' ]iridium(III)acetylacetonate (abbreviation: FIr(acac)).

[0486] Examples of phosphorescent materials that display green or yellow colors and whose emission spectrum has a peak wavelength of more than or equal to 495 nm and less than or equal to 590 nm include the following substances.

[0487] Examples of the phosphorescent material include organometallic iridium complexes with a pyrimidine framework, such as... B. Tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), Tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (Acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (Acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (Acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (Acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (Abbreviation: [Ir(mpmppm)2(acac)]), (Acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN 3 ]phenyl-κC}iridium(III) (abbreviation: [Ir(dmppm-dmp)2(acac)]) and (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]); organometallic iridium complexes with a pyrazine framework, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]) and (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]); organometallic iridium complexes with a pyridine framework, such as B. Tris(2-phenylpyridinato-N,C 2' )iridium(III) (abbreviation: [Ir(ppy)3]), Bis(2-phenylpyridinato-N,C 2' )iridium(III)acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), Bis(benzo[h]quinolinato)iridium(III)acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), Tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), Tris(2-phenylquinolinato-N,C 2' )iridium(III) (abbreviation: [Ir(pq)3]), Bis(2-phenylquinolinato-N,C 2' )iridium(III)acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-(4-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(4dppy)]) and Bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]; organometallic complexes, such as Bis(2,4-diphenyl-1,3-oxazolato-N,C 2' )iridium(III)acetylacetonate (abbreviation: [Ir(dpo)2(acac)]), Bis{2-[4'-(perfluorophenyl)phenyl]pyridinato-N,C 2' }iridium(III)acetylacetonate (abbreviation: [Ir(p-PF-ph)2(acac)]) and bis(2-phenylbenzothiazolato-N,C 2' )iridium(III)acetylacetonate (abbreviation: [Ir(bt)2(acac)]); and a rare earth metal complex, such as Tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]).

[0488] Examples of phosphorescent materials that display yellow or red light and whose emission spectrum has a peak wavelength of more than or equal to 570 nm and less than or equal to 750 nm include the following substances.

[0489] For example, organometallic complexes with a pyrimidine backbone, such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]) and tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]); Organometallic complexes with a pyrazine skeleton, such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), Bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), Bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedionato-κ 2 O,O')iridium(III) (abbreviation: [Ir(dmdppr-P)2(dibm)]), Bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedionato-κ 2 O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmCP)2(dpm)]), (Acetylacetonato)bis[2-methyl-3-phenylquinoxalinato-N,C 2' ]Iridium(III) (abbreviation: [Ir(mpq)2(acac)]), (Acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C 2' )iridium(III) (abbreviation: [Ir(dpq)2(acac)]), (Acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]) and Bis{4,6-dimethyl-2-[5-(5-cyano-2-methylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedionato-κ 2 O,O')iridium(III) (abbreviation: [Ir(dmdppr-m5CP)2(dpm)]); organometallic complexes with a pyridine skeleton, such as Tris(1-phenylisoquinolinato-N,C 2' )iridium(III) (abbreviation: [Ir(piq)3]), Bis(1-phenylisoquinolinato-N,C 2' )iridium(III)acetylacetonate (abbreviation: [Ir(piq)2(acac)]) and bis[4,6-dimethyl-2-(2-quinolinyl-κN)phenyl-κC](2,4-pentanedionato-κ 2 O,O')iridium(III); platinum complexes, such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatin(II) (abbreviation: [PtOEP]); and rare earth metal complexes, such as Tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]) and Tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]).

[0490] The organic compounds (e.g., host material and auxiliary material) used in the light-emitting layer can be one or more types of substances that have a larger energy gap than the light-emitting substance.

[0491] In the case where the light-emitting substance used in the light-emitting layer is a fluorescent material, an organic compound used in combination with the light-emitting substance is preferably an organic compound that has a high energy level in a singlet excitation state and a low energy level in a triplet excitation state.

[0492] With regard to a preferred combination with a light-emitting substance (a fluorescent material or a phosphorescent material), specific examples of the organic compounds are shown below, although some of them overlap with the specific examples shown above.

[0493] In the case where the light-emitting substance is a fluorescent material, examples of the organic compound that can be used in combination with the light-emitting substance include condensed polycyclic aromatic compounds, such as an anthracene derivative, a tetracene derivative, a phenanthrene derivative, a pyrene derivative, a chrysene derivative, and a dibenzo[g,p]chrysene derivative.

[0494] Specific examples of the organic compound (host material) used in combination with the fluorescent material include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: DPCzPA), PCPN, 9,10-diphenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation: DPhPA), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), N,9-Diphenyl-N-{4-[4-(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazol-3-amine (abbreviation: PCAPBA), N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), 6,12-Dimethoxy-5,11-diphenylchrysene, N,N,N',N',N',N',N''',N'''-Octaphenyldibenzo[g,p]chrysen-2,7,10,15-tetraamine (abbreviation: DBC1), CzPA,7-[4-(10-Phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-Diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-Phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), 9,10-Bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10-Di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-Butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9,9'-Bianthryl (abbreviation: BANT), 9,9'-(Stilben-3,3'-diyl)diphenanthrene (abbreviation: DPNS), 9,9'-(Stilben-4,4'-diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-Tri(1-pyrenyl)benzene (abbreviation: TPB3), 5,12-Diphenyltetracene and 5,12-Bis(biphenyl-2-yl)tetracene.

[0495] In the case where the light-emitting substance is a phosphorescent material, an organic compound with a triplet excitation energy (an energy difference between a ground state and a triplet excitation state) that is higher than that of the light-emitting substance is selected as the organic compound to be used in combination with the light-emitting substance.

[0496] In the case where a multitude of organic compounds (e.g. a first host material and a second host material (or an auxiliary material)) are used to form an exciplex in combination with a light-emitting substance, the multitude of organic compounds is preferably mixed with a phosphorescent material (in particular a metal-organic complex).

[0497] In such a structure, light emission can be efficiently achieved through exciplex triplet energy transfer (ExTET), which is the transfer of energy from an exciplex to a light-emitting substance. It should be noted that a combination of the many organic compounds that readily form an exciplex is preferably used, and it is particularly preferable to combine a compound that readily accepts holes (hole transport material) and a compound that readily accepts electrons (electron transport material). Any of the materials described in this embodiment can be used as the hole transport material and electron transport material, respectively. With this structure, high efficiency, low voltage, and a long lifetime of the light-emitting device can be achieved simultaneously.

[0498] In the case where the light-emitting substance is a phosphorescent material, examples of the organic compound that can be used in combination with the light-emitting substance include an aromatic amine, a carbazole derivative, a dibenzothiophene derivative, a dibenzofuran derivative, a zinc- or aluminum-based metal complex, an oxadiazole derivative, a triazole derivative, a benzimidazole derivative, a quinoxaline derivative, a dibenzoquinoxaline derivative, a pyrimidine derivative, a triazine derivative, a pyridine derivative, a bipyridine derivative, and a phenanthroline derivative.

[0499] Among the compounds described above are specific examples of the aromatic amine (a compound with an aromatic amine skeleton), the carbazole derivative, the dibenzothiophene derivative (a thiophene derivative) and the dibenzofuran derivative (a furan derivative), which are organic compounds with high hole transport properties, like the compounds that have been given above as specific examples of the hole transport material.

[0500] Specific examples of zinc and aluminum-based metal complexes, which are organic compounds with high electron transport properties, include metal complexes with a quinoline or benzoquinoline framework, such as Tris(8-quinolinolato)aluminium(III) (abbreviation: Alq), Tris(4-methyl-8-quinolinolato)aluminium(III) (abbreviation: Almq3), Bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), Bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminium(III) (abbreviation: BAlq) and Bis(8-quinolinolato)zinc(II) (abbreviation: Znq).

[0501] Alternatively, a metal complex with an oxazole-based ligand or a thiazole-based ligand, such as bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO) or bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), can be used.

[0502] Specific examples of an oxadiazole derivative, a triazole derivative, a benzimidazole derivative, a quinoxaline derivative, a dibenzoquinoxaline derivative, and a phenanthroline derivative, which are organic compounds with high electron transport properties, include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ). 3-(4-tert-Butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole (abbreviation: p-EtTAZ), 2,2',2''-(1,3,5-Benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(Dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-Bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOS), Bathophenanthroline (abbreviation: Bphen), Bathocuproine (abbreviation: BCP), 2,9-Bis(naphthalen-2-yl)-4,7-Diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2-[3-(Dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(Dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-Carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-Diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(Dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II) and 6-[3-(Dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II).

[0503] Specific examples of a heterocyclic compound with a diazine backbone, a heterocyclic compound with a triazine backbone, and a heterocyclic compound with a pyridine backbone, which are organic compounds with high electron transport properties, include 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4.6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4.6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4.6mCzP2Pm), and 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (Abbreviation: PCCzPTzn), 9-[3-(4,6-Diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 3,5-Bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy) and 1,3,5-Tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB).

[0504] As an organic compound with high electron transport properties, a high molecular weight compound such as poly(2,5-pyridindiyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py) or poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) can also be used.

[0505] The TADF material is capable of upconverting a triplet excitation state to a singlet excitation state (i.e., reverse intersystem crossing is possible) using low thermal energy and efficiently emitting light (fluorescence) from the singlet excitation state. Thermally activated delayed fluorescence is efficiently obtained under the following condition: the energy difference between the triplet excitation level and the singlet excitation level is greater than or equal to 0 eV and less than or equal to 0.2 eV, preferably greater than or equal to 0 eV and less than or equal to 0.1 eV. It should be noted that delayed fluorescence from the TADF material refers to light emission that has the same spectrum as normal fluorescence and a very long lifetime. The lifetime is 10 -6 seconds or longer, preferably 10 -3 Seconds or longer.

[0506] Examples of TADF material include fullerene, a derivative thereof, an acridine derivative such as proflavin, and eosin. Other examples include a metal-containing porphyrin, such as a porphyrin containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of metal-containing porphyrins include a protoporphyrin tin fluoride complex (abbreviation: SnF2(Proto IX)), a mesoporphyrin tin fluoride complex (abbreviation: SnF2(Meso IX)), a hematoporphyrin tin fluoride complex (abbreviation: SnF2(Hämato IX)), a coproporphyrin tetramethyl ester tin fluoride complex (abbreviation: SnF2(Copro III-4Me)), an octaethylporphyrin tin fluoride complex (abbreviation: SnF2(OEP)), an etioporphyrin tin fluoride complex (abbreviation: SnF2(Etio I)) and an octaethylporphyrin platinum chloride complex (abbreviation: PtCl2OEP).

[0507] It is also possible to form a heterocyclic compound with a π-electron-rich heteroaromatic ring and a π-electron-poor heteroaromatic ring, such as... B. 2-(Biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), PCCzPTzn, 2-[4-(10H-Phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-Phenyl-5,10-dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-Dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), Bis[4-(9,9-dimethyl-9,10-dihydroacridin)phenyl]sulfone (abbreviation: DMAC-DPS) or 10-Phenyl-10H,10'H-spiro[acridin-9,9'-anthracene]-10'-one (abbreviation: ACRSA) to be used.It should be noted that a substance in which a π-electron-rich heteroaromatic ring is directly bonded to a π-electron-poor heteroaromatic ring is particularly preferred, since both the donor property of the π-electron-rich heteroaromatic ring and the acceptor property of the π-electron-poor heteroaromatic ring are improved, and the energy difference between the singlet excitation state and the triplet excitation state becomes small.

[0508] It should be noted that the TADF material can also be used in combination with another organic compound. In particular, the TADF material can be used in combination with the host material, the hole transport material, or the electron transport material described above.

[0509] When the aforementioned materials are used in combination with a low-molecular-weight material or a high-molecular-weight material, they can further be used to form the light-emitting layer. A known method (an evaporation process, a coating process, a printing process, or the like) can be appropriately employed for film formation. <elektronentransportschicht>

[0510] The electron transport layer transports electrons injected from the cathode through the electron injection layer to the light-emitting layer. It should be noted that the electron transport layer contains an electron transport material. The electron transport material contained in the electron transport layer is preferably a substance with an electron mobility of 1 × 10⁻⁶ or higher. -6 cm 2 / Vs. It should be noted that any other substance can also be used, as long as the substance transports electrons more easily than it transports holes.

[0511] For example, any of the following materials with high electron transport properties can be used as an electron transport material: a metal complex with a quinoline framework, a metal complex with a benzoquinoline framework, a metal complex with an oxazole framework, a metal complex with a thiazole framework, an oxadiazole derivative, a triazole derivative, an imidazole derivative, an oxazole derivative, a thiazole derivative, a phenanthroline derivative, a quinoline derivative with a quinoline ligand, a benzoquinoline derivative, a quinoxaline derivative, a dibenzoquinoxaline derivative, a pyridine derivative, a bipyridine derivative, a pyrimidine derivative, and a π-electron-deficient heteroaromatic compound, such as a nitrogen-containing heteroaromatic compound.

[0512] The materials described above can be used as specific examples of electron transport materials. <elektroneninjektionsschicht>

[0513] An electron injection layer is a layer composed of a substance with high electron injection properties. Suitable electron injection layers include alkali metals, alkaline earth metals, or compounds thereof, such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF₂), or lithium oxide (LiO₂). x ). A rare-earth metal compound such as erbium fluoride (ErF3) can also be used. Additionally, an electride can be used for the electron injection layer. Examples of electrides include substances in which electrons are added to calcium oxide-aluminum oxide at a high concentration. It should be noted that any of the substances described above can also be used to form the electron transport layer.

[0514] Alternatively, a composite material containing an electron transport material and a donor material (an electron donor material) can be used for the electron injection layer. Such a composite material exhibits excellent electron injection and electron transport properties because the electron donor generates electrons in the organic compound. Here, the organic compound is preferably a material capable of excellent electron transport; in particular, the electron transport materials described above (e.g., a metal complex or a heteroaromatic compound) can be used for the electron transport layer. The electron donor is a substance that exhibits electron donor properties with respect to an organic compound.In particular, an alkali metal, an alkaline earth metal, and a rare earth metal are preferred, and lithium, cesium, magnesium, calcium, erbium, ytterbium, and the like are mentioned. Furthermore, an alkali metal oxide and an alkaline earth metal oxide are preferred, and lithium oxide, calcium oxide, barium oxide, and the like are mentioned. Alternatively, a Lewis base, such as magnesium oxide, may be used. As a further alternative, an organic compound, such as tetrathiafulvalene (abbreviation: TTF), may be used. <ladungserzeugungsschicht>

[0515] The charge-generating layer is provided between two light-emitting units. The charge-generating layer injects electrons into one of the adjacent light-emitting units and holes into the other light-emitting unit when a voltage is applied between the anode and the cathode.

[0516] The charge-generating layer can contain a hole transport material and an acceptor material (electron acceptor material), or it can contain an electron transport material and a donor material. A charge-generating layer with such components can suppress an increase in operating voltage caused by stacking the EL layers.

[0517] The materials described above can be used as hole transport material, acceptor material, electron transport material and donor material.

[0518] For the fabrication of the light-emitting device of an embodiment of the present invention, a vacuum process, such as an evaporation process, or a solution process, such as a rotational coating process or an inkjet process, can be used. If an evaporation process is used, a physical vapor deposition (PVD) process, such as a sputtering process, an ion plating process, an ion beam evaporation process, a molecular beam evaporation process, or a vacuum evaporation process, a chemical vapor deposition (CVD) process, or the like can be employed.In particular, the functional layers (the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer and the electron injection layer) contained in the EL layer and the charge generation layer can be formed by an evaporation process (e.g. a vacuum evaporation process), a coating process (e.g. a dip coating process, a nozzle coating process, a rod coating process, a rotary coating process or a spray coating process), a printing process (e.g. an inkjet process, a screen printing (stencil printing) process, an offset printing (planographic printing) process, a flexographic printing (relief printing) process, an intaglio printing process or a microcontact printing process) or the like.

[0519] The materials of the functional layers and the charge-generating layer in the light-emitting device are not limited to the materials described above. For example, the functional layer material could be a high-molecular-weight compound (e.g., an oligomer, a dendrimer, and a polymer), a medium-molecular-weight compound (a compound between a low-molecular-weight compound and a high-molecular-weight compound with a molecular weight of 400 to 4000), or an inorganic compound (e.g., a quantum dot material). The quantum dot material could be a gelatinous quantum dot material, an alloyed quantum dot material, a core-shell quantum dot material, a core-quantum quantum dot material, or the like.

[0520] This embodiment can be combined with one of the other embodiments or examples as required. (Version 4)

[0521] In this embodiment, a display device of an embodiment of the present invention is based on Fig. 22 described.

[0522] The display device of an embodiment of the present invention comprises first pixel circuits, each containing a light-receiving device, and second pixel circuits, each containing a light-emitting device. The first pixel circuits and the second pixel circuits are each arranged in a matrix.

[0523] Fig. 22A represents an example of the first pixel circuit that includes the light-receiving device, and Fig. 22B represents an example of the second pixel circuit, which includes the light-emitting device.

[0524] A pixel circuit PIX1, which is in Fig. Figure 22A includes a light-receiving device PD, a transistor M1, a transistor M2, a transistor M3, a transistor M4, and a capacitor C1. An example is shown here in which a photodiode is used as the light-receiving device PD.

[0525] A cathode of the light-receiving device PD is electrically connected to a line V1, and its anode is electrically connected to a source and drain terminal of transistor M1. A gate of transistor M1 is electrically connected to a line TX, and its other source and drain terminal is electrically connected to an electrode of capacitor C1, a source and drain terminal of transistor M2, and a gate of transistor M3. A gate of transistor M2 is electrically connected to a line RES, and its other source and drain terminal is electrically connected to a line V2. A source and drain terminal of transistor M3 is electrically connected to a line V3, and its other source and drain terminal is electrically connected to a source and drain terminal of transistor M4.One gate of transistor M4 is electrically connected to a line SE, and its other terminal of source and drain is electrically connected to a line OUT1.

[0526] Lines V1, V2, and V3 are each supplied with a constant potential. When the light-receiving device PD is operated with a reverse bias, line V2 is supplied with a potential lower than that of line V1. Transistor M2 is controlled by a signal supplied to line RES and functions to reset the potential of a node to which the gate of transistor M3 is connected to the potential supplied to line V2. Transistor M1 is controlled by a signal supplied to line TX and functions to control the timing at which the potential of the preceding node changes in accordance with a current flowing through the light-receiving device PD. Transistor M3 acts as an amplifier transistor, providing output in accordance with the potential of the preceding node.Transistor M4 is controlled by a signal supplied to line SE and acts as a selection transistor, so that an external circuit connected to line OUT1 can read the output according to the potential of the preceding node.

[0527] A pixel circuit PIX2, which is in Fig. Figure 22B includes a light-emitting device EL, a transistor M5, a transistor M6, a transistor M7, and a capacitor C2. An example is shown here in which a light-emitting diode is used as the light-emitting device EL. In particular, an organic EL device is preferably used as the light-emitting device EL.

[0528] A gate of transistor M5 is electrically connected to a line VG, one of its source and drain terminals is electrically connected to a line VS, and its other source and drain terminal is electrically connected to an electrode of capacitor C2 and a gate of transistor M6. A source and drain terminal of transistor M6 is electrically connected to a line V4, and its other terminal is electrically connected to an anode of light-emitting device EL and a source and drain terminal of transistor M7. A gate of transistor M7 is electrically connected to a line MS, and its other source and drain terminal is electrically connected to a line OUT2. A cathode of light-emitting device EL is electrically connected to a line V5.

[0529] Lines V4 and V5 are each supplied with a constant potential. The anode side of the light-emitting device EL can be set to a high potential, while the cathode side can be set to a potential lower than that of the anode side. Transistor M5 is controlled by a signal supplied to line VG and serves as a selector transistor for controlling the selected state of the pixel circuit PIX2. Transistor M6 acts as a driver transistor, controlling the current flowing through the light-emitting device EL according to the potential supplied to its gate. When transistor M5 is conducting, the potential supplied to line VS is applied to the gate of transistor M6, and the luminance of the light emission from the light-emitting device EL can be controlled according to this potential.Transistor M7 is controlled by a signal supplied to line MS and functions to output a potential between transistor M6 and the light-emitting device EL to the outside via line OUT2.

[0530] It should be noted that the display device of this embodiment can display an image by emitting light in pulses. By shortening the operating time of the light-emitting device, the power consumption of the display device can be reduced and heat generation can be prevented. In particular, an organic EL device is preferred because it has advantageous frequency characteristics. The frequency can, for example, be higher than or equal to 1 kHz and lower than or equal to 100 MHz.

[0531] Here, transistors M1, M2, M3 and M4, which are included in the pixel circuit PIX1, and M5, M6 and M7, which are included in the pixel circuit PIX2, are preferably used as transistors in which a metal oxide (an oxide semiconductor) is used for a semiconductor layer in which a channel is formed.

[0532] A transistor using a metal oxide with a larger band gap and lower charge carrier density than silicon can exhibit a very low reverse current. Thanks to this low reverse current, the transistor can retain charges stored in a capacitor connected in series with the transistor for extended periods. Therefore, transistors M1, M2, and M5, connected in series with capacitors C1 and C2 respectively, are preferably made of an oxide semiconductor. Using additional transistors of the same type can further reduce manufacturing costs.

[0533] Alternatively, transistors M1 to M7 can be used in which silicon is employed as the semiconductor, forming a channel. In particular, silicon with high crystallinity, such as monocrystalline or polycrystalline silicon, is preferably used, as this allows for high field-effect mobility and higher-speed operation.

[0534] At least one of the transistors M1 to M7 can be a transistor using an oxide semiconductor, while a transistor using silicon can be used as each of the other transistors.

[0535] It should be noted that in Fig. 22A and Fig. Figure 22B shows the n-channel transistors; however, p-channel transistors can also be used.

[0536] The transistors contained in pixel circuit PIX1 and the transistors contained in pixel circuit PIX2 are preferably arranged on the same substrate. In particular, the transistors contained in pixel circuit PIX1 and the transistors contained in pixel circuit PIX2 are preferably mixed and arranged periodically in one region.

[0537] Preferably, one or more layers comprising a transistor and / or a capacitor are positioned to overlap the light-receiving device (PD) or the light-emitting device (EL). Consequently, the effective area occupied by each pixel circuit can be reduced, thus enabling the realization of a high-resolution light-receiving section or a high-resolution display section.

[0538] This embodiment can be combined with the other embodiment as needed. (Version 5)

[0539] In this embodiment, electronic devices of an embodiment of the present invention are used by means of Fig. 23 to Fig. 25 described.

[0540] The electronic devices of this embodiment each include the light-emitting device of an embodiment of the present invention. For example, the light-emitting device of an embodiment of the present invention can be used for a display section of each electronic device. In addition to the light-emitting device, the electronic device preferably includes a photosensor. Since the light-emitting device of an embodiment of the present invention has a function for emitting both visible light and infrared light, it can not only display an image on the display section but also emit light (visible light and / or infrared light) that is used as the light source for the photosensor. When the light-emitting device is combined with the photosensor, biometric authentication can be performed, or a touch (or other form of authentication) can be detected.(an approximation) can be detected. This allows the functionality, suitability, and similar aspects of the electronic device to be improved.

[0541] The electronic devices of this embodiment each alternatively include the display device of an embodiment of the present invention. For example, the display device of an embodiment of the present invention can be used for a display section of each electronic device. Since the display device of an embodiment of the present invention has a function for emitting both visible and infrared light and a function for detecting light, it can not only display an image on the display section but also perform biometric authentication or detect touch (or proximity). Thus, the functionality, suitability, and the like of the electronic device can be enhanced.

[0542] Examples of electronic devices include electronic devices with a relatively large screen, such as a television, a desktop or laptop PC, a computer monitor or the like, digital signage, and large gaming machines such as pinball machines, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, and audio playback devices.

[0543] The electronic device of this embodiment may include a sensor (a sensor with a function for measuring force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, a chemical substance, sound, time, hardness, electric field, current, voltage, electrical power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays).

[0544] The electronic device of this embodiment can have various functions. For example, the electronic device of this embodiment can have a function for displaying various data (a still image, a moving image, a text image, and the like) on the display section, a touchscreen function, a function for displaying a calendar, the date, the time, and the like, a function for executing various types of software (programs), a wireless communication function, and a function for reading a program or data that is / are stored in a storage medium.

[0545] An electronic device 6500, which is in Fig. The device shown in Figure 23A is a portable information terminal that can be used as a smartphone.

[0546] The electronic device 6500 includes a housing 6501, a display section 6502, a power switch 6503, a knob 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display section 6502 has a touchscreen function.

[0547] The light-emitting device or the display device of an embodiment of the present invention can be used for the display section 6502.

[0548] Fig. 23B is a schematic cross-sectional view that includes an end section of the housing 6501, located on the side of the microphone 6506.

[0549] On the side of the housing 6501 facing a display surface, a translucent protective part 6510 is provided, and in a space enclosed by the housing 6501 and the protective part 6510, a display field 6511, an optical part 6512, a touch sensor field 6513, a printed circuit board 6517, a battery 6518 and the like are arranged.

[0550] The display field 6511, the optical part 6512 and the touch sensor field 6513 are attached to the protective part 6510 with an adhesive layer (not shown).

[0551] In an area located further outward than the display section 6502, part of the display field 6511 is folded back, and an FPC 6515 is connected to this folded-back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on the printed circuit board 6517.

[0552] A flexible light-emitting device or a flexible display device of an embodiment of the present invention can be used for the display field 6511. This allows for the realization of a very lightweight electronic device. Since the display field 6511 is very thin, a high-capacity battery 6518 can also be mounted while maintaining the small thickness of the electronic device. If a portion of the display field 6511 is folded back such that a connecting section with the FPC 6515 is located on the back of a pixel section, an electronic device with a narrow bezel can be realized.

[0553] Fig. Figure 24A represents an example of a television set. In a television set 7100, a display section 7000 is installed in a housing 7101. A structure is shown here in which the housing 7101 is supported by a stand 7103.

[0554] The light-emitting device or the display device of an embodiment of the present invention can be used for the display section 7000.

[0555] The 7100 television set, which is in Fig. The display section 7000, shown in section 24A, can be operated using a control switch provided in housing 7101 or a separate remote control 7111. Furthermore, the display section 7000 can be equipped with a touch sensor, allowing the television 7100 to be operated by touching the display section 7000 with a finger or similar object. The remote control 7111 can be equipped with a display section for showing information output by the remote control 7111. The television channels and volume can be controlled, and videos displayed on the display section 7000 can be controlled, using control buttons or a touchscreen on the remote control 7111.

[0556] It should be noted that the 7100 television set has a structure that includes a receiver, a modem, and the like. The receiver allows for the reception of general television broadcasts. When the television set is connected to a communication network via the modem, either wirelessly or via a fixed connection, unidirectional (from a transmitter to a receiver) or bidirectional (e.g., between a transmitter and a receiver or between receivers) data communication can take place.

[0557] Fig. Figure 24B represents an example of a laptop PC. A laptop PC 7200 includes a case 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. The display section 7000 is built into the case 7211.

[0558] The light-emitting device or the display device of an embodiment of the present invention can be used for the display section 7000.

[0559] Fig. 24C and Fig. 24D represents examples of digital signage.

[0560] One in Fig. The 7300 digital signage unit shown in Figure 24C includes a housing 7301, the display section 7000, a speaker 7303, and similar components. Furthermore, the digital signage unit may include an LED lamp, operating buttons (including a power switch or an operating switch), a connection port, various sensors, a microphone, and similar components.

[0561] Fig. 24D represents a Digital Signage 7400 mounted on a cylindrical column 7401. The Digital Signage 7400 includes the display section 7000, which is provided along a curved surface of the column 7401.

[0562] In Fig. 24C and Fig. 24D the light-emitting device or the display device of an embodiment of the present invention can be used for the display section 7000.

[0563] A larger area of ​​ad space 7000 can increase the amount of data that can be displayed at once. The larger ad space 7000 attracts more attention, thus increasing the effectiveness of advertising, for example.

[0564] The use of a touchscreen in display section 7000 is preferred because, in addition to displaying a still or moving image, intuitive operation by a user is possible. Furthermore, for an application providing information such as route or traffic information, the user-friendliness can be improved through intuitive operation.

[0565] Furthermore, as in Fig. 24C and Fig. As shown in Figure 24D, the Digital Signage 7300 and the Digital Signage 7400 preferably operate via wireless communication with a user's information terminal 7311 or information terminal 7411, such as a smartphone. For example, information from an advertisement displayed on the display section 7000 can be displayed on a screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, an advertisement on the display section 7000 can be switched.

[0566] It is possible to configure the Digital Signage 7300 or the Digital Signage 7400 to run a game using the screen of the Information Terminal 7311 or the Information Terminal 7411 as a controller. This allows an unlimited number of users to participate in and enjoy the game simultaneously.

[0567] The in Fig. 25A to Fig. The electronic devices shown in Figure 25F each include a housing 9000, a display section 9001, a loudspeaker 9003, an operating button 9005 (including a power switch or an operating switch), a connection terminal 9006, a sensor 9007 (a sensor with a function for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electrical energy, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008 and the like.

[0568] The in Fig. 25A to Fig. The electronic devices shown in Figure 25F each have various functions. For example, they may have a function for displaying various types of information (such as a still image, a moving image, or a text image) on the display section; a touchscreen function; a function for displaying the calendar, date, time, and / or the like; a processing control function with various types of software (programs); a wireless communication function; and / or a function for reading and processing programs or data stored on a storage medium. It should be noted that the functions of the electronic devices are not limited to these, and they may have various functions. The electronic devices may each include a multitude of display sections.The electronic devices may each be equipped with a camera or the like and have a function for taking a still image or a moving image, a function for storing the recorded image in a storage medium (an external storage medium or the one integrated into the camera), a function for displaying the recorded image on the display section and / or the like.

[0569] The electronic devices that are in Fig. 25A to Fig. The elements shown in section 25F are described in detail below.

[0570] Fig. Figure 25A is a perspective view of a portable information terminal 9101. For example, the portable information terminal 9101 can be used as a smartphone. It should be noted that the portable information terminal 9101 may include the speaker 9003, the connection port 9006, the sensor 9007, or the like. The portable information terminal 9101 can display text and image information on its various surfaces. Fig. In section 25A, three icons 9050 are displayed. Additionally, information 9051, represented by dashed rectangles, can be displayed on another surface of the display section 9001. Examples of information 9051 include notification of the arrival of an email, SNS message, call, or the like; the subject and sender of an email, SNS message, or the like; the date; the time; the remaining battery power; and the antenna signal strength. The icon 9050, or similar, can be displayed in the location where the information 9051 is shown.

[0571] Fig. Figure 25B is a perspective view of a portable information terminal 9102. The portable information terminal 9102 has a function for displaying information on three or more surfaces of the display section 9001. Here, information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check the information 9053, which is displayed in such a way that it can be viewed from above the portable information terminal 9102, with the portable information terminal 9102 kept in a breast pocket of their clothing. The user can view the display without removing the portable information terminal 9102 from the pocket and decide, for example, whether to answer the call.

[0572] Fig. Figure 25C is a perspective view depicting a portable information terminal 9200 in the form of a wristwatch. The portable information terminal 9200 can be used, for example, as a smartwatch. Furthermore, the display surface of the display section 9001 is curved, and a display can be presented on this curved surface. The portable information terminal 9200 enables hands-free telephone calls via a headset suitable for wireless communication. The portable information terminal 9200 can perform data transfer with another information terminal and / or charge using the connection port 9006. It should be noted that charging can also be done wirelessly.

[0573] Fig. 25D to Fig. Figures 25F are perspective views depicting a foldable portable information terminal 9201. Fig. 25D is the perspective view of the portable information terminal 9201, which is open, in Fig. 25F this is folded up, and in Fig. 25E this is determined by the state in Fig. 25D in the state in Fig. 25F or vice versa. The 9201 information terminal is easily portable when folded. When opened, it provides a seamless, large display area that is easily searchable. The display section 9001 of the 9201 portable information terminal is supported by three housings 9000 connected by hinges 9055. For example, the display section 9001 can be bent with a radius of curvature greater than or equal to 0.1 mm and less than or equal to 150 mm.

[0574] This embodiment can be combined with one of the other embodiments or examples as required. [Example 1]

[0575] This example describes the results of a software-based investigation of the device structure of a light-emitting device, which can be used for the light-emitting device or the display device of an embodiment of the present invention.

[0576] In particular, the results of an investigation into the device structure, which was carried out at a facility in Fig. 26A light-emitting device 1000 and one in Fig. The light-emitting device 1100 shown in 26B is described in this example.

[0577] The light-emitting device 1000 includes a light-emitting device 1(B) that emits blue light, a light-emitting device 1(G) that emits green light, a light-emitting device 1(R) that emits red light, and a light-emitting device 1(IR) that emits infrared light. Four light-emitting devices in the light-emitting device 1000 have the same structure except for the thickness of the optical matching layer 199.

[0578] The light-emitting devices 1 in the light-emitting device 1000 each comprise, above the substrate 151, the pixel electrode 191, the optical matching layer 199, the common layer 112, the light-emitting layer 193N, the light-emitting layer 193R, the light-emitting layer 193G, the light-emitting layer 193B, the common layer 114, the common electrode 115, and the buffer layer 116 in that order. That is, starting from the side of the optical matching layer 199, the light-emitting layers are arranged in descending order of wavelength of light.

[0579] The light-emitting device 1100 includes a light-emitting device 2(B) that emits blue light, a light-emitting device 2(G) that emits green light, a light-emitting device 2(R) that emits red light, and a light-emitting device 2(IR) that emits infrared light. Four light-emitting devices in the light-emitting device 1100 have the same structure except for the thickness of the optical matching layer 199.

[0580] The light-emitting devices 2 in the light-emitting device 1100 each comprise, above the substrate 151, the pixel electrode 191, the optical matching layer 199, the common layer 112, the light-emitting layer 193B, the light-emitting layer 193G, the light-emitting layer 193R, the light-emitting layer 193N, the common layer 114, the common electrode 115, and the buffer layer 116 in that order. That is, starting from the side of the optical matching layer 199, the light-emitting layers are arranged in ascending order of the wavelength of light, and that in the light-emitting device 1100, the arrangement order of the four light-emitting layers is the reverse of that in the light-emitting device 1000.

[0581] The structural formulas of the organic compounds whose measured values ​​(e.g., refractive indices n, extinction coefficients k and emission spectra) were used for the calculation of this example are shown below.

[0582] In this example, the calculation was performed using an organic device simulator (semiconducting emissive thin film optics simulator: setfos; Cybernet Systems Co., Ltd.).

[0583] In this calculation, the thickness, refractive index n (measured value) and extinction coefficient k (measured value) of each layer contained in the light-emitting device, a measured value of the emission spectrum (photoluminescence (PL) spectrum) of a light-emitting material, and the position and width of a light-emitting area were entered, and multiplication by a Purcell factor was performed to determine the emission intensity in the front direction and the curve of a spectrum, taking into account a modulation of the radiation decay rate of excitons.

[0584] The refractive index n and the extinction coefficient k of each layer were measured using a spectroscopic ellipsometer (M-2000U, manufactured by JA Woollam Japan Corporation). The measurements were performed using a film obtained by depositing material of each layer onto a quartz substrate to a thickness of approximately 50 nm using a vacuum evaporation process.

[0585] The emission spectrum of the light-emitting material was measured using a multichannel spectrometer (C10029-01, manufactured by Hamamatsu Photonics KK) as a detector for visible light, a near-infrared spectroradiometer (SR-NIR, manufactured by TOPCON CORPORATION) as a detector for near-infrared light, an ultraviolet LED (NSCU033B, manufactured by NICHIA CORPORATION) as excitation light, UV U360 (manufactured by Edmund Optics Inc.) as a bandpass filter, and SCF-50S-42L (manufactured by SIGMAKOKI CO., LTD.) as a longpass filter.

[0586] For the measurement of the emission spectrum of blue light, a film was used which was deposited on a quartz substrate by co-evaporation of 7-[4-(10-Phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA) and N,N'-(Pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03) in a weight ratio of 1:0.03 in a thickness of 50 nm using a vacuum evaporation process.

[0587] For the measurement of the emission spectrum of green light, a film was used which was deposited on a quartz substrate by co-evaporation of 2-[3'-(Dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), N-(1,1'-Biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF) and Tris(2-phenylpyridinato-N,C2')iridium(III) (abbreviation: [Ir(ppy)3]) in a weight ratio of 0.8:0.2:0.05 in a thickness of 50 nm using a vacuum evaporation process.

[0588] For the measurement of the emission spectrum of red light, a film was used which was produced by co-evaporation of 2mDBTBPDBq-II, PCBBiF and Bis{2-[5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]-4,6-dimethylphenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedionato-κ) using a vacuum evaporation process. 2 O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmp)2(dpm)]) was deposited in a weight ratio of 0.8:0.2:0.05 in a thickness of 50 nm on a quartz substrate.

[0589] For the measurement of the emission spectrum of infrared light, a film was used which was produced by co-evaporation of 2mDBTBPDBq-II, PCBBiF and Bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-2-benzo[g]quinoxalinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptandionato-κ) using a vacuum evaporation process. 2 O,O')iridium(III) (abbreviation: [Ir(dmdpbq)2(dpm)]) was deposited in a weight ratio of 0.7:0.3:0.1 to a thickness of 50 nm on a quartz substrate. It should be noted that a synthesis example of [Ir(dmdpbq)2(dpm)] is described in a reference example below.

[0590] Fig. Figure 27 shows the PL spectra used for the calculation. Fig. Figure 27 shows that the horizontal axis represents the wavelength (unit: nm) and the vertical axis represents the normalized PL intensity based on energy (arbitrary unit). It should be noted that the PL intensity based on photons can be determined by multiplying the PL intensity based on energy by the wavelength.

[0591] It was assumed that the light-emitting area is located in the center of the light-emitting layer.

[0592] For both visible and infrared light, the emission quantum yield, exciton production probability, and recombination probability were each assumed to be 100%. This means that the calculated external quantum efficiency (Lambertian assumption) is the light extraction efficiency determined from the front emission intensity under the Lambertian light distribution assumption.

[0593] The device structures of the light-emitting devices 1 and the light-emitting devices 2 used in this example are described with reference to Table 2 and Table 3.

[0594] It should be noted that for the sake of simplicity of calculation, the hole injection layer, the electron injection layer and the charge generation layer have been omitted. [Table 2] Light-emitting device 1 layer material Film thickness Buffer layer 116 DBT3P-II 70 nm Input value common electrode 115 AG 15 nm Input value common shift 114 NB Phen 44 nm Input value Light-emitting layer 193B NPB 10 nm Input value Light-emitting layer 193G NPB 10 nm Input value Light-emitting layer 193R NPB 10 nm Input value Light-emitting layer 193N NPB 10 nm Input value common shift 112 PCBBiF 30 nm Input value optical adaptation layer 199 ITO optimized Pixel electrode 191 AG 100 nm Input value [Table 3] Light-emitting device 2 layer material Film thickness Buffer layer 116 DBT3SP-II 70 nm Input value common electrode 115 AG 15 nm Input value common shift 114 NB Phen 16 nm Input value Light-emitting layer 193N NPB 10 nm Input value Light-emitting layer 193R NPB 10 nm Input value Light-emitting layer 193G NPB 10 nm Input value Light-emitting layer 193B NPB 10 nm Input value common shift 112 PCBBiF 30 nm Input value optical adaptation layer 199 ITO optimized Pixel electrode 191 AG 100 nm Input value

[0595] Substrate 151 was assumed to be a 0.7 mm thick glass substrate with a refractive index of 1.5.

[0596] A 100 nm thick silver (Ag) film was used as pixel electrode 191 (also called reflective electrode).

[0597] An indium tin oxide (ITO) film was used as the optical matching layer 199 (also referred to as the transparent electrode). An optimal thickness of the optical matching layer 199 for the respective R-, G-, B-, and IR-emitting devices was determined by calculation.

[0598] PCBBiF with a thickness of 30 nm was used as the common layer 112, assuming a hole transport layer.

[0599] The light-emitting layer 193N, the light-emitting layer 193R, the light-emitting layer 193G and the light-emitting layer 193B each had a thickness of 10 nm, and 4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB) was used as the host material.

[0600] The common layer 114 was 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), assuming an electron transport layer. The thickness of the common layer 114 was determined by calculating the external quantum efficiency (Lambert assumption) of blue to maximize it. Specifically, the thickness of the common layer 114 was set to 44 nm for light-emitting device 1000 and to 16 nm for light-emitting device 1100.

[0601] A 15 nm thick silver film was used as the common electrode 115.

[0602] Buffer layer 116 was 1,3,5-Tri(dibenzothiophen-4-yl)benzene (abbreviation: DBT3P-II) with a thickness of 70 nm.

[0603] It should be noted that it was assumed that the air (refractive index: 1) was located above the buffer layer 116 (on the side opposite the side in contact with the common electrode 115).

[0604] Under the above conditions, the optimal device structure of the light-emitting device was calculated.

[0605] In the calculation, the thickness of the optical matching layer 199 was determined such that the optical path length between the pixel electrode 191 and the common electrode 115 was approximately λ and the external quantum efficiency (Lambert assumption) of light with respective wavelengths was at its maximum.

[0606] Table 4 shows the calculation results of the thickness of the optical matching layer 199 for the light-emitting device 1 and the light-emitting device 2. [Table 4] Light-emitting device 1 Light-emitting device 2 199B 73 nm 102 nm 199G 115 nm 138 nm 199R 163 nm 182 nm 199N 252 nm 268 nm

[0607] As shown in Table 4, for light-emitting device 1000, the calculated thickness of the optical matching layer 199B of light-emitting device 1(B) was 73 nm, that of the optical matching layer 199G of light-emitting device 1(G) was 115 nm, that of the optical matching layer 199R of light-emitting device 1(R) was 163 nm, and that of the optical matching layer 199N of light-emitting device 1(IR) was 252 nm.

[0608] As shown in Table 4, for the light-emitting device 1100, the calculated thickness of the optical matching layer 199B of the light-emitting device 2(B) was 102 nm, that of the optical matching layer 199G of the light-emitting device 2(G) was 138 nm, that of the optical matching layer 199R of the light-emitting device 2(R) was 182 nm, and that of the optical matching layer 199N of the light-emitting device 2(IR) was 268 nm.

[0609] Fig. Figure 28 shows the calculated emission (EL) spectra of light-emitting device 1(B) and light-emitting device 2(B). Fig. Figure 29 shows the calculated emission (EL) spectra of light-emitting device 1(G) and light-emitting device 2(G). Fig. Figure 30 shows the calculated emission (EL) spectra of the light-emitting device 1(R) and the light-emitting device 2(R). Fig. Figure 31 shows the calculated emission (EL) spectra of light-emitting device 1(IR) and light-emitting device 2(IR). Fig. 28 to Fig. 31 The horizontal axis represents the wavelength (unit: nm) and the vertical axis represents the normalized emission intensity on an energy basis (arbitrary unit).

[0610] As in Fig. As shown in Figure 28, both light-emitting device 1(B) and light-emitting device 2(B) exhibited equally high external quantum efficiency in a blue region. As shown in Fig. As shown in Figure 29, the light-emitting device 1(G) exhibited a higher external quantum efficiency than the light-emitting device 2(G). As shown in Fig. As shown in Figure 30, the light-emitting device 1(R) similarly exhibited a higher external quantum efficiency than the light-emitting device 2(R). As in Fig. As shown in Figure 31, the light-emitting device 1(IR) also exhibited a higher external quantum efficiency than the light-emitting device 2(IR).

[0611] The above results indicate that when comparing light-emitting devices, light-emitting device 1000 may have higher emission efficiency and lower electricity consumption than light-emitting device 1100.

[0612] The light-emitting device 1000 differs from the light-emitting device 1100 in the arrangement of the light-emitting layers. It has been suggested that when the light-emitting layers are arranged in descending order of wavelength of light, starting from the side of the optical matching layer 199, the optical path length between a pair of electrodes of the light-emitting device is more easily adjusted to an advantageous length than when the light-emitting layers are arranged in ascending order of wavelength of light.

[0613] From the results of this example, the device structure of the light-emitting device could be estimated, from which red light, green light, blue light and infrared light can each be extracted with high efficiency simply by changing the thickness of the optical matching layer.

[0614] As in Fig. As shown in Figure 28, a peak of near-infrared light was observed in addition to a peak of blue light in the light-emitting device 1(B).

[0615] This suggested that the light-emitting device 1(B) could be used for a subpixel that emits both blue light and infrared light. For example, the structure of the light-emitting device 1(B) could be used for the in Fig. The light-emitting device 47B(IR) shown in Figure 8A can be used. In this way, the light-emitting device can emit both visible and infrared light without increasing the number of subpixels contained in a pixel. Therefore, the light-emitting device can have a function for emitting infrared light without significantly altering the pixel layout of the light-emitting device.

[0616] It has also been suggested that the light-emitting device 1(B) can be used for both a subpixel that emits blue light and a subpixel that emits infrared light. For example, the structure of the light-emitting device 1(B) can be used for both the subpixel that emits blue light and the subpixel that emits infrared light. Fig. The light-emitting device 47B shown in Figure 8B can be used for both the light-emitting device 47B and the light-emitting device 47N. In this way, a subpixel that emits infrared light can be provided without significantly increasing the number of manufacturing steps for the light-emitting device. (Reference example)

[0617] A specific synthesis method for Bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-2-benzo[g]quinoxalinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedionato-κ) is described. 2 Describe [Ir(dmdpbq)2(dpm)], which was used in the preceding example. The structure of [Ir(dmdpbq)2(dpm)] is shown below. <Schritt 1; Synthese von 2,3-Bis-(3,5-dimethylphenyl)-2-benzo[g]chinoxalin (Abkürzung: Hdmdpbq)>

[0618] First, in step 1, Hdmdpbq was prepared. In a three-necked flask equipped with a reflux tube, 3.20 g of 3,3',5,5'-tetramethylbenzyl, 1.97 g of 2,3-diaminonaphthalene, and 60 ml of ethanol were added. The air in the flask was replaced with nitrogen, and the mixture was stirred at 90 °C for 7.5 hours. After a predetermined time, the solvent was distilled off. Purification was then carried out by silica gel column chromatography using toluene as the mobile phase, affording the target compound (3.73 g of a yellow solid in 79% yield). The synthesis scheme of step 1 is shown in (a-1).

[0619] The nuclear magnetic resonance ( 1 The analytical results obtained by 1H NMR spectroscopy of the yellow solid obtained in step 1 are shown below. The analytical results revealed that Hdmdpbq was obtained.

[0620] The following will 1 H-NMR data of the obtained substance are shown. 1 H NMR. δ (CD2Cl2): 2.28 (s, 12H), 7.01 (s, 2H), 7.16 (s, 4H), 7.56-7.58 (m, 2H), 8.11-8.13 (m, 2H), 8.74 (s, 2H). <Schritt 2; Synthese von Di-µ-chlor-tetrakis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-2-benzo[g]chinoxalinyl-κN]phenyl-κC}diiridium(III) (Abkürzung: [Ir(dmdpbq)2Cl]2)>

[0621] Next, in step 2, [Ir(dmdpbq)₂Cl]₂ was prepared. Into a recovery flask equipped with a reflux tube, 15 mL of 2-ethoxyethanol, 5 mL of water, 1.81 g of Hdmdpbq obtained in step 1, and 0.66 g of iridium chloride hydrate (IrCl₃·H₂O) (manufactured by Furuya Metal Co., Ltd.) were added, and the air in the flask was replaced with argon. The mixture was then irradiated with microwaves (2.45 GHz, 100 W) for 2 hours to initiate the reaction. After a predetermined time, the resulting residue was subjected to suction filtration with methanol and washed to obtain the target compound (1.76 g of a black solid in 81% yield). The synthesis scheme of step 2 is shown at (a-2). <Schritt 3; Synthese von [Ir(dmdpbq)2(dpm)]>

[0622] Subsequently, in step 3, [Ir(dmdpbq)₂(dpm)] was prepared. Into a recovery flask equipped with a reflux tube, 20 ml of 2-ethoxyethanol, 1.75 g of [Ir(dmdpbq)₂Cl]₂ obtained in step 2, 0.50 g of dipivaloylmethane (abbreviated Hdpm), and 0.95 g of sodium carbonate were added, and the air in the flask was replaced with argon. The mixture was then irradiated with microwaves (2.45 GHz, 100 W) for 3 hours. The resulting residue was subjected to suction filtration with methanol and then washed with water and methanol. The obtained solid was purified by silica gel column chromatography using dichloromethane as the mobile phase, and then recrystallization was carried out from a mixed solvent of dichloromethane and methanol, yielding the target substance (0.42 g of a dark green solid in a yield of 21%).0.41 g of the resulting dark green solid were purified by a train sublimation process. The dark green solid was heated at 300 °C under the following sublimation purification conditions: the pressure was 2.7 Pa and the argon gas flow rate was 10.5 ml / min. After sublimation purification, a dark green solid was obtained in a yield of 78%. The synthesis scheme for step 3 is shown at (a-3).

[0623] The nuclear magnetic resonance ( 1 The analytical results obtained by 1H NMR spectroscopy of the dark green solid obtained in step 3 are shown below. The analytical results revealed that [Ir(dmdpbq)2(dpm)] was obtained.

[0624] 1 H-NMR. δ (CD2Cl2): 0.75 (s, 18H), 0.97 (s, 6H), 2.01 (s, 6H), 2.52 (s, 12H), 4.86 (s, 1H), 6.39 (s, 2H), 7.15 (s, 2H), 7.31 (s, 2H), 7.44-7.51 (m, 4H), 7,80 (d, 2H), 7,86 (s, 4H), 8,04 (d, 2H), 8,42 (s, 2H), 8,58 (s, 2H). Erläuterung der Bezugszeichen

[0625] C1: Capacitor, C2: Capacitor, IRF: Optical filter, M1: Transistor, M2: Transistor, M3: Transistor, M4: Transistor, M5: Transistor, M6: Transistor, M7: Transistor, OUT1: Line, OUT2: Line, PD: Light receiving device, PIX1: Pixel circuit, PIX2: Pixel circuit, V1: Line, V2: Line, V3: Line, V4: Line, V5: Line, 1: Light emitting device, 2: Light emitting device, 10A: Display device, 10B: Display device, 10C: Display device, 10D: Display device, 10E: Display device, 10F: Display device, 21B: Light, 21G: Light, 21N: Infrared light, 22: Light, 23a: Light, 23b: Reflected light, 30A: Light emitting device, 30B: Light emitting device 30C: Light-emitting device, 30D: Light-emitting device, 40A: Light-emitting device, 40B: Light-emitting device, 40C: Light-emitting device, 40D: Light-emitting device, 40E: Light-emitting device41: Transistor, 42: Transistor, 45: Transistor layer, 47B: Light-emitting device, 47G: Light-emitting device, 47N: Light-emitting device, 47R: Light-emitting device, 47V: Light-emitting device, 48a: Light-emitting unit, 48b: Light-emitting unit, 48c: Light-emitting unit, 48d: Light-emitting unit, 48e: Light-emitting unit, 50A: Display device, 50B: Display device, 52: Finger, 53: Light-receiving layer, 55: Transistor layer, 57: Light-emitting layer, 100A: Display device, 100B: Display device, 100C: Display device, 100D: Display device, 110: Light-receiving device, 112: Common layer, 114: common layer, 115: common electrode, 116: buffer layer, 141a: filter, 141b: filter, 142: adhesive layer, 143: space, 149: lens, 151: substrate, 152: substrate, 153: substrate, 154: substrate, 155: adhesive layer,162: Display section, 163: Light-emitting section, 164: Circuit, 165: Conductor, 166: Conductive layer, 172: FPC, 173: IC, 181: Pixel electrode, 182: Buffer layer, 183: Active layer, 184: Buffer layer, 189: Optical matching layer, 189N: Optical matching layer, 190: Light-emitting device, 190B: Light-emitting device, 190G: Light-emitting device, 190N: Light-emitting device, 191: Pixel electrode, 191B: Pixel electrode, 191N: Pixel electrode, 192: Buffer layer, 193: Light-emitting layer, 193B: Light-emitting layer, 193G: Light-emitting layer, 193N: Light-emitting layer, 193R: Light Emitting layer, 193V: Light-emitting layer, 194: Buffer layer, 195: Protective layer, 195a: Inorganic insulating layer, 195b: Organic insulating layer, 195c: Inorganic insulating layer, 198: Intermediate layer, 198a: Intermediate layer, 198b: Intermediate layer, 199: Optical matching layer, 199B: Optical matching layer,199G: optical matching layer, 199N: optical matching layer, 199R: optical matching layer, 199V: optical matching layer, 200A: light-emitting device, 200B: light-emitting device, 201: transistor, 202: transistor, 204: interconnect, 205: transistor, 206: transistor, 207: transistor, 208: transistor, 209: transistor, 210: transistor, 211: insulating layer, 212: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 216: partition, 217: partition, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 228: area 231: Semiconductor layer, 231i: Channel forming area, 231n: Low-resistance area, 242: Interconnect layer, 1000: Light-emitting device, 1100: Light-emitting device, 6500: Electronic device, 6501: Housing, 6502: Display section, 6503: Power switch, 6504: Knob, 6505: Speaker, 6506: Microphone, 6507: Camera6508: Light source, 6510: Protective part, 6511: Display panel, 6512: Optical part, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display section, 7100: Television, 7101: Housing, 7103: Stand, 7111: Remote control, 7200: Laptop PC, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Column, 7411: Information terminal, 9000: Housing 9001: Display section, 9003: Speaker, 9005: Control button, 9006: Connection port, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Joint, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal< / ladungserzeugungsschicht> < / elektroneninjektionsschicht> < / elektronentransportschicht> < / elektrode>

Claims

[1] Light-emitting device comprising: a first light-emitting device (47N) and a second light-emitting device (47R), wherein the first light-emitting device (47N) comprises a first pixel electrode (191), a first optical matching layer (199N), a first light-emitting layer (193N), a second light-emitting layer (193R), a third light-emitting layer (193G), a fourth light-emitting layer (193B) and a common electrode (115), wherein the second light-emitting device (47R) comprises a second pixel electrode (191), a second optical matching layer (199R), the first light-emitting layer (193N), the second light-emitting layer (193R), the third light-emitting layer (193G), the fourth light-emitting layer (193B) and the common electrode (115), wherein the first optical matching layer (199N) is positioned between the first pixel electrode (191) and the common electrode (115), wherein the second optical matching layer (199R) is positioned between the second pixel electrode (191) and the common electrode (115), wherein the first light-emitting layer (193N), the second light-emitting layer (193R), the third light-emitting layer (193G) and the fourth light-emitting layer (193B) each comprise a region positioned between the first pixel electrode (191) and the common electrode (115), and a region positioned between the second pixel electrode (191) and the common electrode (115), wherein the first light-emitting layer (193N) is designed to emit infrared light, wherein the second light-emitting layer (193R) is designed to emit visible light, wherein the third light-emitting layer (193G) is configured to emit visible light with a wavelength shorter than that of visible light emitted by the second light-emitting layer (193R), wherein the fourth light-emitting layer (193B) is configured to emit visible light with a wavelength shorter than that of visible light emitted by the third light-emitting layer (193G), wherein the first light-emitting device (47N) emits infrared light emitted by the first light-emitting layer (193N), and wherein the second light-emitting device (47R) emits visible light emitted by one of the second light-emitting layer (193R), the third light-emitting layer (193G) and the fourth light-emitting layer (193B). [2] Light-emitting device according to claim 1, wherein the second light-emitting layer (193R) is designed to emit red light, wherein the third light-emitting layer (193G) is designed to emit green light, and the fourth light-emitting layer (193B) is designed to emit blue light. [3] Light-emitting device according to claim 1, wherein the first light-emitting device (47N) and the second light-emitting device (47R) further comprise a first charge-generating layer (198a), and wherein the first charge-generating layer (198a) is positioned between the first light-emitting layer (193N) and the fourth light-emitting layer (193B). [4] Light-emitting device according to claim 1, wherein the first light-emitting device (47N) and the second light-emitting device (47R) further comprise a second charge-generating layer (198b), and wherein the second charge-generating layer (198b) is positioned between the first light-emitting layer (193N) and the second light-emitting layer (193R). [5] Light-emitting device according to claim 1, wherein the first light-emitting layer (193N), the second light-emitting layer (193R), the third light-emitting layer (193G) and the fourth light-emitting layer (193B) are arranged one above the other in that order from the side closest to the first optical matching layer (199N), and wherein the first light-emitting layer (193N), the second light-emitting layer (193R), the third light-emitting layer (193G) and the fourth light-emitting layer (193B) are arranged one above the other in that order from the side that is close to the second optical matching layer (199R). [6] Light-emitting device according to claim 1, wherein the first light-emitting device (47N) emits both infrared light emitted by the first light-emitting layer (193N) and visible light emitted by the fourth light-emitting layer (193B). [7] Light-emitting device according to claim 1, wherein the first optical matching layer (199N) is positioned between the first pixel electrode (191) and the first light-emitting layer (193N). [8] Light-emitting device according to claim 1, wherein the first optical matching layer (199N) is positioned between the common electrode (115) and the first light-emitting layer (193N). [9] Display device comprising a display section: wherein the display section comprises a first light-emitting device (47N), a second light-emitting device (47R) and a light-receiving device (110), wherein the first light-emitting device (47N) comprises a first pixel electrode (191), a first optical matching layer (199N), a first light-emitting layer (193N), a second light-emitting layer (193R) and a common electrode (115), wherein the second light-emitting device (47R) comprises a second pixel electrode (191), a second optical matching layer (199R), the first light-emitting layer (193N), the second light-emitting layer (193R) and the common electrode (115), wherein the first optical matching layer (199N) is positioned between the first pixel electrode (191) and the common electrode (115), wherein the second optical matching layer (199R) is positioned between the second pixel electrode (191) and the common electrode (115), wherein the first light-emitting layer (193N) and the second light-emitting layer (193R) each comprise a region positioned between the first pixel electrode (191) and the common electrode (115), and a region positioned between the second pixel electrode (191) and the common electrode (115), wherein the light receiving device (110) comprises a third pixel electrode (181), an active layer (183) and the common electrode (115), wherein the active layer (183) is positioned between the third pixel electrode (181) and the common electrode (115), wherein the active layer (183) contains an organic compound, wherein the first light-emitting device (47N) emits infrared light emitted by the first light-emitting layer (193N), wherein the second light-emitting device (47R) emits visible light emitted by the second light-emitting layer (193R), and wherein the light-receiving device (110) is configured to absorb at least part of the visible light and part of the infrared light. [10] Display device according to claim 9, wherein the first light-emitting device (47N) comprises a common layer (112), wherein the second light-emitting device (47R) comprises the common layer (112), wherein the light-receiving device (110) comprises the common layer (112), and wherein the common layer (112) comprises a region positioned between the first pixel electrode (191) and the common electrode (115), a region positioned between the second pixel electrode (191) and the common electrode (115), and a region positioned between the third pixel electrode (181) and the common electrode (115). [11] Display device according to claim 9, further comprising: a third light-emitting device (47G), wherein the first light-emitting device (47N) and the second light-emitting device (47R) further comprise a third light-emitting layer (193G), comprising the third light-emitting device (47G), a fourth pixel electrode (191), a third optical matching layer (199G), the first light-emitting layer (193N), the second light-emitting layer (193R), the third light-emitting layer (193G) and the common electrode (115), wherein the third light-emitting layer (193G) comprises a region positioned between the first pixel electrode (191) and the common electrode (115), a region positioned between the second pixel electrode (191) and the common electrode (115), and a region positioned between the fourth pixel electrode (191) and the common electrode (115), wherein the third light-emitting device (47G) emits visible light emitted by the third light-emitting layer (193G), and wherein the second light-emitting layer (193R) emits light whose wavelength differs from that of the light emitted by the third light-emitting layer (193G). [12] Display device according to claim 9, wherein the first light-emitting device (47N) and the second light-emitting device (47R) further comprise a third light-emitting layer (193G), wherein the third light-emitting layer (193G) comprises a region positioned between the first pixel electrode (191) and the common electrode (115), and a region positioned between the second pixel electrode (191) and the common electrode (115), and wherein the first light-emitting device (47N) emits both infrared light emitted by the first light-emitting layer (193N) and visible light emitted by the third light-emitting layer (193G). [13] Display device according to claim 9, wherein the first light-emitting device (47N) and the second light-emitting device (47R) further comprise a charge-generating layer (198), and wherein the charge generation layer (198) is positioned between the first light-emitting layer (193N) and the second light-emitting layer (193R). [14] Display device according to claim 9, wherein the first light-emitting layer (193N) comprises a region positioned between the first optical matching layer (199N) and the second light-emitting layer (193R), and a region positioned between the second optical matching layer (199R) and the second light-emitting layer (193R). [15] Display device comprising: a display section wherein the display section comprises a first light-emitting device (47N), a second light-emitting device (47R) and a light-receiving device (110), wherein the first light-emitting device (47N) comprises a first pixel electrode (191), a first optical matching layer (199N), a first light-emitting layer (193N), a second light-emitting layer (193R), a third light-emitting layer (193G), a fourth light-emitting layer (193B) and a common electrode (115), wherein the second light-emitting device (47R) comprises a second pixel electrode (191), a second optical matching layer (199R), the first light-emitting layer (193N), the second light-emitting layer (193R), the third light-emitting layer (193G), the fourth light-emitting layer (193B) and the common electrode (115), wherein the first optical matching layer (199N) is positioned between the first pixel electrode (191) and the common electrode (115), wherein the second optical matching layer (199R) is positioned between the second pixel electrode (191) and the common electrode (115), wherein the first light-emitting layer (193N), the second light-emitting layer (193R), the third light-emitting layer (193G) and the fourth light-emitting layer (193B) each comprise a region positioned between the first pixel electrode (191) and the common electrode (115), and a region positioned between the second pixel electrode (191) and the common electrode (115), wherein the first light-emitting layer (193N) is designed to emit infrared light, wherein the second light-emitting layer (193R) is designed to emit visible light, wherein the third light-emitting layer (193G) is configured to emit visible light with a wavelength shorter than that of visible light emitted by the second light-emitting layer (193R), wherein the fourth light-emitting layer (193B) is configured to emit visible light with a wavelength shorter than that of visible light emitted by the third light-emitting layer (193G), wherein the light receiving device (110) comprises a third pixel electrode (181), an active layer (183) and the common electrode (115), wherein the active layer (183) is positioned between the third pixel electrode (181) and the common electrode (115), wherein the active layer (183) contains an organic compound, wherein the first light-emitting device (47N) emits infrared light emitted by the first light-emitting layer (193N), wherein the second light-emitting device (47R) emits visible light emitted by one of the second light-emitting layer (193R), the third light-emitting layer (193G) and the fourth light-emitting layer (193B), and wherein the light-receiving device (110) is configured to absorb at least part of the visible light and part of the infrared light. [16] Display device according to claim 15, wherein the second light-emitting layer (193R) is designed to emit red light, wherein the third light-emitting layer (193G) is designed to emit green light, and the fourth light-emitting layer (193B) is designed to emit blue light. [17] Display device according to claim 15, wherein the first light-emitting device (47N) and the second light-emitting device (47R) further comprise a first charge-generating layer (198a), and wherein the first charge-generating layer (198a) is positioned between the first light-emitting layer (193N) and the fourth light-emitting layer (193B). [18] Display device according to claim 15, wherein the first light-emitting device (47N) and the second light-emitting device (47R) further comprise a second charge-generating layer (198b), and wherein the second charge-generating layer (198b) is positioned between the first light-emitting layer (193N) and the second light-emitting layer (193R). [19] Display device according to claim 15, wherein the first light-emitting layer (193N), the second light-emitting layer (193R), the third light-emitting layer (193G) and the fourth light-emitting layer (193B) are arranged one above the other in that order from the side closest to the first optical matching layer (199N), and wherein the first light-emitting layer (193N), the second light-emitting layer (193R), the third light-emitting layer (193G) and the fourth light-emitting layer (193B) are arranged one above the other in that order from the side that is close to the second optical matching layer (199R). [20] Display device according to claim 15, wherein the first light-emitting device (47N) emits both infrared light emitted by the first light-emitting layer (193N) and visible light emitted by the fourth light-emitting layer (193B). [21] Display device according to claim 9 or 15, wherein the first optical matching layer (199N) is positioned between the first pixel electrode (191) and the first light-emitting layer (193N). [22] Display device according to claim 9 or 15, wherein the display section has flexibility.

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